Plating device and operating method of plating device

Abstract

The present invention removes bubbles efficiently from the entire resistor. The present invention includes: a plating tank (410) configured to contain a plating solution; a substrate support (440) configured to hold a substrate (Wf) with a plated surface facing downward; an anode (430) disposed in the plating tank (410); a resistor (450) disposed between the substrate (Wf) and the anode (430); a stirring member (480) disposed between the substrate (Wf) and the resistor (450); and a driving mechanism (482) configured to cause the stirring member (480) to reciprocate along the plated surface of the substrate (Wf), wherein the driving mechanism (482) is configured to perform a first bubble removal action of causing the stirring member (480) to reciprocate around a first position as a center, and a second bubble removal action of causing the stirring member (480) to reciprocate around a second position different from the first position as a center during a debubbling process for removing bubbles attached to the resistor (450).

Description

Technical Field

[0001] The present application relates to a plating device and an operating method of the plating device. Background Art

[0002] As an example of a plating device, a cup-type electrolytic plating device is known. In the cup-type electrolytic plating device, a substrate (such as a semiconductor wafer) with a plated surface facing downward is immersed in a plating solution, and a voltage is applied between the substrate and an anode to deposit a conductive film on the plated surface of the substrate.

[0003] For example, as disclosed in Patent Document 1, in a cup-type electrolytic plating device, it is known that a resistor is arranged between a substrate and an anode. In addition, in a cup-type electrolytic plating device, it is known that a stirring member is arranged between the substrate and the resistor, and the plating solution is stirred by reciprocating the stirring member along the plated surface of the substrate.

[0004] Patent Document 1: Japanese Patent No. 7135234

[0005] Conventional plating apparatuses do not take into account efficient removal of bubbles from the entire resistor body.

[0006] That is, in the plating device, there is a situation where bubbles are attached to the resistor when the plating solution is filled into the plating tank. In this regard, the stirring member is originally used to stir the plating solution during the plating process to make the metal ions in the plating solution uniform relative to the plated surface of the substrate, but it is also considered to be used to remove bubbles attached to the resistor.

[0007] However, if the stirring member is reciprocated with a standard stroke used in the plating process (for example, a stroke in which the peripheral portion of the stirring member just overlaps the peripheral portion of the resistor body), there is a concern that the bubbles attached to the peripheral portion of the resistor body will not be removed. In this regard, it is also considered to make the stirring member reciprocate with a longer stroke, but in this case, due to the long stroke, sufficient turbulence for removing bubbles is not generated, and as a result, there is a concern that bubbles that have not been removed will remain in the resistor body, or that it will take a long time to remove the bubbles. Summary of the invention

[0008] Therefore, one of the objects of the present application is to efficiently remove bubbles from the entire resistor.

[0009] According to one embodiment, a plating device is disclosed, comprising: a plating tank, which is configured to contain a plating liquid; a substrate holder, which is configured to hold a substrate with a plated surface facing downward; an anode, which is arranged in the above-mentioned plating tank; a resistor, which is arranged between the above-mentioned substrate and the above-mentioned anode; a stirring member, which is arranged between the above-mentioned substrate and the above-mentioned resistor; and a driving mechanism, which is configured to make the above-mentioned stirring member reciprocate along the above-mentioned plated surface of the above-mentioned substrate, and the above-mentioned driving mechanism is configured to perform a first bubble removal action of making the above-mentioned stirring member reciprocate around a first position as a center, and a second bubble removal action of making the above-mentioned stirring member reciprocate around a second position different from the above-mentioned first position as a center during a debubbling treatment for removing bubbles attached to the above-mentioned resistor. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is a perspective view showing the overall structure of the plating apparatus according to the present embodiment.

[0011] Figure 2 It is a plan view showing the overall structure of the plating apparatus according to the present embodiment.

[0012] Figure 3 It is a longitudinal sectional view schematically showing the structure of the plating module according to the present embodiment.

[0013] Figure 4 It is a top view schematically showing a stirring member according to one embodiment.

[0014] Figure 5A It is a plan view schematically showing a state in which the bubble removal operation is performed by causing the stirring member to reciprocate around a reference position.

[0015] Figure 5B This is a plan view schematically showing a state in which a bubble removal operation is performed by causing a stirring member to reciprocate around a position close to the peripheral edge of the resistor.

[0016] Figure 5C This is a plan view schematically showing a state in which a bubble removal operation is performed by causing a stirring member to reciprocate around a position close to the peripheral edge of the resistor.

[0017] Figure 6 It is a plan view schematically showing a state in which a stirring operation is performed by causing a stirring member to reciprocate around a reference position.

[0018] Figure 7 This is a flow chart of the operation method of the plating device.

[0019] Figure 8 It is a longitudinal sectional view schematically showing the structure of the plating module according to the present embodiment.

[0020] Fig. 9A It is a plan view schematically showing a state in which the bubble removal operation is performed by causing the stirring member to reciprocate around a reference position.

[0021] Fig. 9B This is a plan view schematically showing a state in which the bubble removal operation is performed by causing the stirring member to reciprocate around a position closer to the shielding member than a reference position.

[0022] Fig. 10A It is a plan view schematically showing a state in which the stirring member is reciprocated in the first stroke to perform the stirring operation.

[0023] Fig. 10B It is a plan view schematically showing a state in which the stirring member is reciprocated in the second stroke to perform the stirring operation.

[0024] Fig.11 This is a flow chart of the operation method of the plating device. DETAILED DESCRIPTION

[0025] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings described below, the same or corresponding components are denoted by the same reference numerals and duplicate descriptions are omitted.

[0026] <Overall structure of plating equipment>

[0027] Figure 1 It is a perspective view showing the overall structure of the plating apparatus according to the present embodiment. Figure 2 2 is a top view showing the overall structure of the plating device of this embodiment. Figure 1 , 2 As shown, the plating device 1000 includes: a loading port 100, a conveying robot 110, an aligner 120, a pre-wetting module 200, a pre-preg module 300, a plating module 400, a cleaning module 500, a spin dryer 600, a conveying device 700 and a control module 800.

[0028] The loading port 100 is a module for carrying a substrate stored in a box such as a FOUP (not shown) into the plating device 1000, or carrying a substrate out of the plating device 1000 to a box. In the present embodiment, four loading ports 100 are arranged in a horizontal direction, but the number and arrangement of the loading ports 100 are arbitrary. The conveying robot 110 is a robot for conveying substrates, and is configured to transfer substrates between the loading port 100, the aligner 120, the pre-wetting module 200, and the spin dryer 600. When the substrate is transferred between the conveying robot 110 and the conveying device 700, the conveying robot 110 and the conveying device 700 can transfer the substrate via a temporary placement table (not shown).

[0029] The aligner 120 is a module for aligning the positioning plane, notch, etc. of the substrate in a specified direction. In the present embodiment, two aligners 120 are arranged in a horizontal direction, but the number and configuration of the aligners 120 are arbitrary. The pre-wet module 200 replaces the air inside the pattern formed on the surface of the substrate with the processing liquid by wetting the plated surface of the substrate before the plating process with a processing liquid such as pure water or degassed water. The pre-wet module 200 is configured to implement a pre-wet process, which is a process that easily supplies the plating liquid to the inside of the pattern by replacing the processing liquid inside the pattern with the plating liquid during plating. In the present embodiment, two pre-wet modules 200 are arranged in a vertical direction, but the number and configuration of the pre-wet modules 200 are arbitrary.

[0030] The prepreg module 300 is configured to perform a prepreg treatment, which is a treatment for cleaning or activating the surface of the plated substrate by etching away a high-resistance oxide film such as a seed layer surface formed on the plated surface of the substrate before the plating treatment with a treatment solution such as sulfuric acid or hydrochloric acid. In the present embodiment, two prepreg modules 300 are arranged in the vertical direction, but the number and configuration of the prepreg modules 300 are arbitrary. The plating module 400 performs a plating treatment on the substrate. In the present embodiment, there are 2 groups of 12 plating modules 400, 3 of which are arranged in the vertical direction and 4 of which are arranged in the horizontal direction, and a total of 24 plating modules 400 are provided, but the number and configuration of the plating modules 400 are arbitrary.

[0031] The cleaning module 500 is configured to perform cleaning on the substrate in order to remove the plating liquid etc. remaining in the substrate after the plating treatment. In the present embodiment, two cleaning modules 500 are arranged in the vertical direction, but the number and configuration of the cleaning modules 500 are arbitrary. The spin dryer 600 is a module for rotating the substrate after the cleaning treatment at high speed to dry it. In the present embodiment, two spin dryers are arranged in the vertical direction, but the number and configuration of the spin dryers are arbitrary. The conveying device 700 is a device for conveying substrates between multiple modules in the plating device 1000. The control module 800 is configured to control multiple modules of the plating device 1000, and can be composed of a common computer or a special computer having an input and output interface with an operator, for example.

[0032] An example of a series of plating processes performed by the plating device 1000 is described. First, the substrate stored in the box is carried into the loading port 100. Then, the conveying robot 110 takes out the substrate from the box of the loading port 100 and conveys the substrate to the aligner 120. The aligner 120 aligns the positioning plane, the notch, etc. of the substrate in a predetermined direction. The conveying robot 110 delivers the substrate aligned by the aligner 120 to the pre-wetting module 200.

[0033] The prewetting module 200 performs a prewetting process on the substrate. The conveying device 700 conveys the substrate subjected to the prewetting process to the prepreg module 300. The prepreg module 300 performs a prepreg process on the substrate. The conveying device 700 conveys the substrate subjected to the prepreg process to the plating module 400. The plating module 400 performs a plating process on the substrate.

[0034] The conveying device 700 conveys the substrate subjected to the plating process to the cleaning module 500. The cleaning module 500 performs a cleaning process on the substrate. The conveying device 700 conveys the substrate subjected to the cleaning process to the spin dryer 600. The spin dryer 600 performs a drying process on the substrate. The conveying robot 110 receives the substrate from the spin dryer 600 and conveys the substrate subjected to the drying process to the box of the loading port 100. Finally, the box containing the substrate is unloaded from the loading port 100.

[0035] <Structure of the plating module>

[0036] Next, the structure of the plating module 400 will be described. In the present embodiment, the 24 plating modules 400 have the same structure, and therefore only one plating module 400 will be described.

[0037] Figure 3 4 is a longitudinal sectional view schematically showing the structure of the plating module 400 of this embodiment. Figure 3 As shown, the plating module 400 is provided with a plating tank 410 for accommodating a plating solution. The plating module 400 is provided with a film 420 that separates the interior of the plating tank 410 in the up-down direction. The interior of the plating tank 410 is divided into a cathode region 422 and an anode region 424 by the film 420. The plating solution is filled into the cathode region 422 and the anode region 424, respectively. An anode 430 is provided on the bottom surface of the plating tank 410 in the anode region 424. The anode 430 is a disk-shaped component having a size substantially equal to that of the disk-shaped substrate Wf.

[0038] In addition, the plating module 400 includes a substrate holder 440 for holding the substrate Wf in a state where the surface to be plated Wf-a faces downward. The substrate holder 440 includes a power supply contact for supplying power to the outer edge of the substrate Wf from a power source not shown. The plating module 400 includes a lifting mechanism 442 for lifting the substrate holder 440. The lifting mechanism 442 can be implemented by a well-known mechanism such as a motor.

[0039] In addition, the plating module 400 is provided with a rotating mechanism 446 for rotating the substrate holder 440 in such a manner that the substrate Wf rotates around an imaginary rotation axis extending vertically in the center of the plated surface Wf-a. The rotating mechanism 446 can be implemented by a known mechanism such as a motor. The plating module 400 is configured to immerse the substrate Wf in the plating solution of the cathode region 422 using the lifting mechanism 442, rotate the substrate Wf using the rotating mechanism 446, and apply a voltage between the anode 430 and the substrate Wf, thereby performing a plating process on the plated surface Wf-a of the substrate Wf.

[0040] The plating module 400 includes a resistor 450 disposed between the substrate Wf and the anode 430. The resistor 450 is opposite to the film 420 and is disposed in the cathode region 422. In one embodiment, the resistor 450 is formed of a plate-like member (punching plate) having a plurality of through holes extending through the anode 430 side and the substrate Wf side. However, the shape of the resistor 450 is arbitrary. In addition, the resistor 450 is not limited to the punching plate, and can also be formed of a porous body having a plurality of pores formed in a ceramic material, for example. The resistor 450 acts as a resistor between the anode 430 and the substrate Wf. By configuring the resistor 450, the resistance value between the anode 430 and the substrate Wf becomes larger, so that the electric field is not easily expanded, and as a result, the uniformity of the distribution of the plating film thickness formed on the plated surface Wf-a of the substrate Wf can be improved.

[0041] In addition, the plating module 400 includes: a stirring member (paddle) 480, which is arranged between the substrate Wf held by the substrate holder 440 and the resistor 450; and a driving mechanism 482, which is used to stir the stirring member 480 in the plating solution. The driving mechanism 482 can be implemented by a well-known mechanism such as a motor and a linear guide. The driving mechanism 482 is configured to reciprocate the stirring member 480 along the plated surface Wf-a of the substrate Wf, thereby stirring the plating solution near the plated surface of the substrate Wf.

[0042] Figure 4 FIG. 1 is a top view schematically showing a stirring member according to one embodiment. Figure 4As shown, the stirring member 480 is composed of a plate-like member having a rectangular base end 480A, a substantially elliptical stirring portion 480B connected to the base end 480A, and a rectangular front end 480C connected to the stirring portion 480B. A plurality of honeycomb-shaped holes are formed in the stirring portion 480B. The base end 480A is supported by a paddle shaft 484 extending in the reciprocating direction of the stirring member 480. The driving mechanism 482 is configured to cause the stirring member 480 to reciprocate along the paddle shaft 484. In addition, the stirring member 480 may not be formed with honeycomb-shaped holes, for example, it can be composed of a plate member having a plurality of rod-shaped members arranged in a lattice.

[0043] In the present embodiment, the stirring member 480 is used to make the metal ions in the plating solution relative to the plated surface of the substrate Wf uniform by stirring the plating solution. On this basis, the stirring member 480 is used to remove bubbles attached to the resistor 450. That is, in the plating device 1000, there is a situation where bubbles are attached to the resistor 450 when the plating solution is filled into the plating tank 410. In particular, there is a situation where bubbles are attached to the through holes of the resistor 450. Even other than when the plating solution is filled into the plating tank 410, there is a situation where bubbles are attached to the resistor 450. Therefore, the stirring member 480 is used to generate turbulence of the plating solution by stirring the plating solution near the resistor 450, and remove the bubbles attached to the resistor 450 by the turbulence. The bubble removal in the present embodiment is described below.

[0044] Figure 5A FIG. 2 is a top view schematically showing a state in which a stirring member is reciprocated around a reference position to perform a bubble removal operation. Figure 5A In the following figures, for the sake of convenience, one moving direction of the reciprocating motion of the stirring member 480 is set to +, and the opposite moving direction is set to –. The stirring member 480 in the state of maximum movement in the + direction is drawn with a solid line, and the stirring member 480 in the state of maximum movement in the – direction is drawn with a dotted line.

[0045] like Figure 5A As shown, the stirring member 480 is configured such that the size of the stirring portion 480B in the reciprocating direction is smaller than the size of the resistor 450 in the reciprocating direction. The driving mechanism 482 is configured to perform a first bubble removal operation in which the stirring member 480 reciprocates around a first position (a reference position passing through the center of the resistor 450 in this embodiment) during a debubbling process for removing bubbles attached to the resistor 450.

[0046] More specifically, the driving mechanism 482 causes the stirring member 480 to reciprocate with a bubble removal stroke (a stroke of β mm) around the first position (±0 mm). The stroke refers to the total distance of the movement distance in the + direction and the movement distance in the - direction starting from the center of the reciprocating motion of the stirring member 480. In the present embodiment, the bubble removal stroke (a stroke of β mm) is a standard stroke (described later) such that the peripheral portion of the stirring portion 480B overlaps the peripheral portion of the resistor 450 when the stirring member 480 is moved to the maximum in the + and - directions around the first position (±0 mm). Figure 6 Ymm stroke) short stroke.

[0047] Figure 5B FIG. 1 is a top view schematically showing a state in which the stirring member is reciprocated around a position close to the peripheral edge of the resistor to perform a bubble removal operation. Figure 5B As shown, the drive mechanism 482 is configured to perform a second bubble removal operation in which the stirring member 480 reciprocates around a second position different from the first position (in this embodiment, a position shifted by α mm in the + direction from a reference position passing through the center of the resistor 450). More specifically, the drive mechanism 482 reciprocates the stirring member 480 with a stroke of β mm around the second position (+α mm). In this embodiment, +α mm is the length of the peripheral portion of the stirring portion 480B over the peripheral portion of the resistor 450 when the stirring member 480 is moved to the maximum in the + direction.

[0048] Figure 5C FIG. 1 is a top view schematically showing a state in which the stirring member is reciprocated around a position close to the peripheral edge of the resistor to perform a bubble removal operation. Figure 5C As shown, the drive mechanism 482 is configured to perform a third bubble removal operation in which the stirring member 480 reciprocates around a third position different from the first position and the second position (in this embodiment, a position shifted by α mm in the - direction from the reference position passing through the center of the resistor 450). More specifically, the drive mechanism 482 reciprocates the stirring member 480 with a stroke of β mm around the third position (-α mm). In this embodiment, -α mm is the length of the peripheral portion of the stirring portion 480B passing over the peripheral portion of the resistor 450 when the stirring member 480 is moved to the maximum in the - direction.

[0049] According to this embodiment, bubbles can be removed efficiently in the entire resistor 450. That is, if the stirring member 480 is moved around the first position (±0 mm) Figure 6If the stirring member 480 reciprocates with a stroke of Y mm as shown, there is a concern that the bubbles attached to the peripheral portion of the resistor 450 cannot be removed. In this regard, it is also considered to make the stirring member 480 reciprocate with a stroke longer than Y mm, but in this case, due to the long stroke, sufficient turbulence for removing bubbles is not generated, and as a result, there is a concern that bubbles that have not been removed will remain in the resistor 450, or that it will take a long time to remove the bubbles.

[0050] In contrast, in the present embodiment, bubbles mainly attached to the central portion of the resistor 450 can be removed by the first bubble removal action. In addition, bubbles mainly attached to one peripheral portion of the resistor 450 can be removed by the second bubble removal action. In addition, bubbles mainly attached to another peripheral portion of the resistor 450 can be removed by the third bubble removal action. In other words, according to the present embodiment, bubbles can be removed intensively at each position by performing the debubbling process at a plurality of positions, so that bubbles can be efficiently removed from the entire resistor 450. In particular, in the present embodiment, the stirring member 480 is reciprocated with a stroke of β mm shorter than Y mm. Thus, sufficient turbulence for removing bubbles can be generated at each position, so that bubbles can be efficiently removed from the entire resistor 450.

[0051] Next, the stirring operation during the plating process on the surface to be plated of the substrate Wf will be described. Figure 6 FIG. 2 is a top view schematically showing a state in which a stirring member is caused to reciprocate around a reference position to perform a stirring action. Figure 6 As shown, the driving mechanism 482 is configured to perform a stirring operation of causing the stirring member 480 to reciprocate around a reference position passing through the center of the surface to be plated during plating processing on the surface to be plated of the substrate Wf.

[0052] More specifically, the driving mechanism 482 causes the stirring member 480 to reciprocate with a standard stroke (stroke of Y mm) around the reference position (±0 mm). In the present embodiment, the standard stroke (stroke of Y mm) is a stroke in which the peripheral edge of the stirring portion 480B of the stirring member 480 overlaps with the peripheral edge of the resistor 450 when the stirring member 480 is moved to the maximum in the + direction and the - direction around the reference position (±0 mm).

[0053] According to this embodiment, by reciprocating the stirring member 480 about a reference position passing through the center of the plated surface, the metal ions in the plating solution relative to the plated surface can be uniformized, thereby improving the uniformity of the distribution of the plating film thickness formed on the plated surface.

[0054] Next, an operating method of the plating apparatus according to the present embodiment will be described. Figure 7 It is a flow chart of the operation method of the plating device. Figure 7 As shown, the operating method of the plating apparatus supplies the plating solution to the plating tank 410 (supply step S102 ). When the plating solution is supplied to the plating tank 410 , bubbles adhere to the resistor 450 disposed in the plating tank 410 .

[0055] Next, the operation method of the plating device is to remove bubbles attached to the resistor 450 by reciprocating the stirring member 480 with a stroke of βmm around the first position (the reference position passing through the center of the resistor 450) (the first bubble removal step S104). Next, the operation method of the plating device is to remove bubbles attached to the resistor 450 by reciprocating the stirring member with a stroke of βmm around the second position (the position shifted in the + direction by αmm from the reference position passing through the center of the resistor 450) (the second bubble removal step S106). Next, the operation method of the plating device is to remove bubbles attached to the resistor 450 by reciprocating the stirring member with a stroke of βmm around the third position (the position shifted in the - direction by αmm from the reference position passing through the center of the resistor 450) (the third bubble removal step S108). Thus, bubbles can be removed from the entire resistor 450.

[0056] Next, the operation method of the plating device is to immerse the substrate Wf with the plated surface facing downward in the plating solution in the plating tank 410 by lowering the substrate support 440 (immersion step S110). Next, the operation method of the plating device is to form a plating layer on the plated surface of the substrate Wf by rotating the substrate Wf using the rotating mechanism 446 and applying a voltage between the anode 430 and the substrate Wf (plating step S112). In the execution of the plating step S112, the operation method of the plating device is to reciprocate the stirring member 480 with a stroke of Ymm around the reference position passing through the center of the plated surface as the center (stirring step S114). Thus, the metal ions in the plating solution relative to the plated surface can be uniformized, so that the uniformity of the distribution of the plating film thickness formed on the plated surface can be improved. In addition, the stirring step S114 can be started at the same time as the plating step S112, or before the plating step S112.

[0057] Next, the operation method of the plating device determines whether to end the plating process (step S116). The operation method of the plating device, for example, returns to the plating step S112 when the preset plating time has not passed (step S116, no). On the other hand, the operation method of the plating device, for example, ends the plating process when the preset plating time has passed (step S116, yes).

[0058] Figure 8 It is a longitudinal sectional view schematically showing the structure of the plating module according to the present embodiment. Figure 8 The embodiment shown has Figure 3 The same structure as the embodiment shown in FIG. 1 is different in that a shielding member 481 is further provided. Figure 3 The description of the same structures as those in the illustrated embodiments will be omitted.

[0059] like Figure 8 As shown, the plating module 400 includes a shielding member 481 that can be arranged between the substrate Wf and the resistor 450. The shielding member 481 is a member for shielding the electric field formed between the anode 430 and the substrate Wf. The shielding member 481 may be, for example, a shielding plate formed in a plate shape. In addition, the plating module 400 includes a shielding mechanism 485 for moving the shielding member 481. The shielding mechanism 485 is configured to operate according to a command signal based on information related to the rotation angle of the substrate holder 440 input from the control module 800.

[0060] Specifically, the shielding mechanism 485 is configured to, when the rotation angle of a specific portion of the substrate Wf where the deposition rate of the plating layer is to be suppressed is within a predetermined range, Figure 8 As shown by the solid line in FIG. 1 , the shielding member 481 is moved to the shielding position between the resistor 450 and the substrate Wf. On the other hand, the shielding mechanism 485 is configured so that when the rotation angle of a specific portion of the substrate Wf is outside the prescribed range, as shown in FIG. Figure 8 As shown by the dotted line in FIG. 4 , the shielding member 481 is moved to a retreat position away from the resistor 450 and the substrate Wf. Figure 8 As shown, the shielding member 481 is arranged at the same height position as the stirring member 480 .

[0061] Therefore, when the stirring member 480 is reciprocated, the stirring member 480 interferes with the shielding member 481. In other words, the shielding member 481 is arranged within the reciprocating range of the stirring member 480. Therefore, the plating module 400 of this embodiment prevents the interference between the stirring member 480 and the shielding member 481 as follows.

[0062] Fig. 9A It is a plan view schematically showing a state in which the bubble removal operation is performed by causing the stirring member to reciprocate around a reference position. Fig. 9B This is a plan view schematically showing a state in which the bubble removal operation is performed by causing the stirring member to reciprocate around a position closer to the shielding member than a reference position.

[0063] like Fig. 9A , Fig. 9BAs shown in FIG. 1 , the stirring member 480 has a cutout 480D corresponding to the shape of the shielding member 481 at a portion facing the shielding member 481. When the bubbles of the resistor 450 are removed, the shielding member 481 is located at the retreat position. Fig. 9A As shown, the driving mechanism 482 is configured to perform a reference bubble removal operation in which the stirring member 480 reciprocates around a reference position passing through the center of the resistor 450 during a debubbling process for removing bubbles attached to the resistor 450 .

[0064] More specifically, the driving mechanism 482 reciprocates the stirring member 480 with a standard stroke (stroke of Y mm) around the reference position (±0 mm). In this case, since the stirring member 480 has the cutout 480D, there is a concern that the bubbles in the portion of the resistor 450 corresponding to the cutout 480D (the peripheral portion of the resistor 450) cannot be removed.

[0065] Therefore, if Fig. 9B As shown, the drive mechanism 482 is configured to perform a peripheral bubble removal operation in which the stirring member 480 reciprocates with a position closer to the shielding member 481 than the reference position (±0 mm) as the center. More specifically, the drive mechanism 482 causes the stirring member 480 to reciprocate with a stroke of Y mm with a position closer to the shielding member 481 than the reference position (±0 mm) by +X mm as the center. +Xmm in this embodiment is the size of the cutout 480D in the moving direction of the reciprocating motion of the stirring member 480, but is not limited thereto, as long as it is the length of the cutout 480D that passes over the peripheral portion of the resistor 450 when the stirring member 480 is moved to the maximum in the + direction.

[0066] According to this embodiment, bubbles can be efficiently removed from the entire resistor 450. That is, when the notch 480D is formed in the stirring member 480 for the purpose of preventing interference with the shielding member 481, as shown in FIG. Fig. 9A As shown, there is a concern that the bubbles in the portion of the resistor 450 corresponding to the cutout 480D (the peripheral portion of the resistor 450) cannot be removed. In this regard, although it is also considered to make the stirring member 480 reciprocate with a longer stroke, in this case, due to the long stroke, sufficient turbulence for removing the bubbles is not generated, and as a result, there is a concern that bubbles that have not been removed will remain in the resistor 450, or that it will take a long time to remove the bubbles.

[0067] In contrast, in the present embodiment, debubbling treatment is performed at a reference position passing through the center of the resistor 450 and at a position closer to the shielding member 481 than the reference position, thereby also removing bubbles from the portion of the resistor 450 corresponding to the cutout 480D. As a result, bubbles can be efficiently removed from the entire resistor 450.

[0068] Next, the stirring operation during the plating process on the surface to be plated of the substrate Wf will be described. Fig. 10A It is a plan view schematically showing a state in which the stirring member is reciprocated in the first stroke to perform the stirring operation. Fig. 10B It is a plan view schematically showing a state in which the stirring member is reciprocated in the second stroke to perform the stirring operation.

[0069] like Fig. 10A As shown, the driving mechanism 482 is configured to perform a reference stirring operation of reciprocating the stirring member 480 at a first stroke when the shielding member 481 is located at the shielding position during the plating process on the surface to be plated of the substrate Wf.

[0070] More specifically, the driving mechanism 482 causes the stirring member 480 to reciprocate with a stroke of Y mm around a reference position (±0 mm) passing through the center of the plated surface of the substrate Wf. Fig. 10B As shown, the driving mechanism 482 is configured to perform an expansion stirring action of reciprocating the stirring member 480 with a second stroke (Y+Xmm) longer than the first stroke (Ymm) when the shielding member 481 is in the retreat position. Thus, the interference between the stirring member 480 and the shielding member 481 can be prevented, and the metal ions in the plating solution relative to the plated surface can be uniformized, so that the uniformity of the distribution of the plating film thickness formed on the plated surface can be improved. In addition, in the present embodiment, the second stroke is a stroke that makes the reciprocating range of the stirring member 480 longer by Xmm on the shielding member 481 side compared with the first stroke (Ymm), but is not limited to this.

[0071] Next, an operating method of the plating apparatus according to the present embodiment will be described. Fig.11 It is a flow chart of the operation method of the plating device. Fig.11 As shown, the operating method of the plating apparatus supplies the plating solution to the plating tank 410 (supply step S202 ). When the plating solution is supplied to the plating tank 410 , bubbles adhere to the resistor 450 disposed in the plating tank 410 .

[0072] Next, the operation method of the plating device removes bubbles attached to the resistor 450 by reciprocating the stirring member 480 with a stroke of Y mm around the reference position passing through the center of the resistor 450 (reference bubble removal step S204). Next, the operation method of the plating device removes bubbles attached to the resistor 450 by reciprocating the stirring member 480 with a stroke of Y mm around the reference position passing through the center of the resistor 450 and the shielding member 481 closer to X mm (peripheral bubble removal step S206). Thus, bubbles are removed from the entire resistor 450.

[0073] Next, the operation method of the plating device lowers the substrate support 440 to immerse the substrate Wf with the plated surface facing downward in the plating solution in the plating tank 410 (immersion step S208). Next, the operation method of the plating device rotates the substrate Wf using the rotating mechanism 446 and applies a voltage between the anode 430 and the substrate Wf to form a plating layer on the plated surface of the substrate Wf (plating step S210). During the execution of the plating step 210, the operation method of the plating device moves the shielding member 481 between the shielding position and the retreat position (shielding step S212).

[0074] The method of operation of the plating device determines whether the shielding member 481 is located at the shielding position during the execution of the plating step S210 (determination step S214). The method of operation of the plating device, when it is determined that the shielding member 481 is located at the shielding position (determination step S214, yes), causes the stirring member 480 to reciprocate with a first stroke (Y mm) (reference stirring step S216). On the other hand, when it is determined that the shielding member 481 is not at the shielding position (determination step S214, no), that is, when the shielding member 481 is located at the retreat position, causes the stirring member 480 to reciprocate with a second stroke (Y+X mm) longer than the first stroke (expansion stirring step S218). Thus, interference between the stirring member 480 and the shielding member 481 can be prevented, and the metal ions in the plating solution relative to the plated surface can be homogenized, thereby improving the uniformity of the distribution of the plating film thickness formed on the plated surface.

[0075] Next, the operation method of the plating device determines whether to end the plating process (step S220). The operation method of the plating device, for example, returns to the plating step S210 when the preset plating time has not passed (step S220, no). On the other hand, the operation method of the plating device, for example, ends the plating process when the preset plating time has passed (step S220, yes).

[0076] Several embodiments of the present invention have been described above, but the embodiments of the invention described above are used to facilitate understanding of the present invention and do not limit the present invention. The present invention can be changed and improved without departing from its main purpose, and the present invention certainly includes its equivalents. In addition, within the scope of at least a part of the above-mentioned problems that can be solved or within the scope of at least a part of the effects that can be achieved, any combination or omission of the constituent elements recorded in the claims and the specification can be performed.

[0077] The present application discloses, as an embodiment, a plating device, which includes: a plating tank, wherein the plating tank is configured to contain a plating liquid; a substrate holder, wherein the substrate holder is configured to hold a substrate with a plated surface facing downward; an anode, wherein the anode is arranged in the plating tank; a resistor, wherein the resistor is arranged between the substrate and the anode; a stirring member, wherein the stirring member is arranged between the substrate and the resistor; and a driving mechanism, wherein the driving mechanism is configured to cause the stirring member to reciprocate along the plated surface of the substrate, and wherein the driving mechanism is configured to perform a first bubble removal action of causing the stirring member to reciprocate around a first position as a center, and a second bubble removal action of causing the stirring member to reciprocate around a second position different from the first position as a center during a debubbling process for removing bubbles attached to the resistor.

[0078] In addition, the present application discloses a plating device as an embodiment, wherein the driving mechanism is configured to perform a stirring action that causes the stirring member to reciprocate around a reference position passing through the center of the plated surface during plating processing relative to the plated surface of the substrate.

[0079] In addition, the present application discloses a plating device as an embodiment, wherein the above-mentioned driving mechanism is configured to cause the above-mentioned stirring component to reciprocate with a standard stroke during the above-mentioned stirring action, and to cause the above-mentioned stirring component to reciprocate with a bubble removal stroke shorter than the above-mentioned standard stroke during the above-mentioned first bubble removal action and the above-mentioned second bubble removal action.

[0080] In addition, the present application discloses, as an embodiment, a plating device, which further includes: a shielding part, which is arranged within the range of reciprocating motion of the stirring part; and a shielding mechanism, which enables the shielding part to move between a shielding position between the resistor and the substrate, and a retreat position away from the resistor and the substrate, and the stirring part has a cutout corresponding to the shape of the shielding part at a portion opposite to the shielding part, and the driving mechanism is configured to perform a reference bubble removal action of causing the stirring part to reciprocate around a reference position passing through the center of the resistor, and a peripheral bubble removal action of causing the stirring part to reciprocate around a position closer to the shielding part than the reference position during a debubbling treatment for removing bubbles attached to the resistor.

[0081] In addition, the present application discloses a plating device as an embodiment, wherein the above-mentioned driving mechanism is configured to, during the plating treatment of the above-mentioned plated surface relative to the above-mentioned substrate, when the above-mentioned shielding member is located at the above-mentioned shielding position, perform a basic stirring action of causing the above-mentioned stirring member to reciprocate with a first stroke, and when the above-mentioned shielding member is located at the above-mentioned retreat position, perform an expansion stirring action of causing the above-mentioned stirring member to reciprocate with a second stroke longer than the above-mentioned first stroke.

[0082] In addition, the present application discloses, as one embodiment, a plating device, wherein the second stroke is a stroke in which the range of the reciprocating motion of the stirring member is made longer on the shielding member side than the first stroke.

[0083] In addition, the present application discloses, as an embodiment, a method for operating a plating device, which includes: a supply step, in which a plating liquid is supplied to a plating tank in which a resistor is arranged; a first bubble removal step, in which bubbles attached to the resistor are removed by causing a stirring member above the resistor arranged in the plating tank to reciprocate around a first position; and a second bubble removal step, in which bubbles attached to the resistor are removed by causing the stirring member to reciprocate around a second position different from the first position.

[0084] In addition, the present application discloses, as an embodiment, a method for operating a plating device, which further includes: an immersion step, in which a substrate with a plated surface facing downward is immersed in the plating liquid in the above-mentioned plating tank; a plating step, in which a plating layer is formed on the above-mentioned plated surface of the above-mentioned substrate; and a stirring step, in which, during the execution of the above-mentioned plating step, the above-mentioned stirring component is reciprocated around a reference position passing through the center of the above-mentioned plated surface.

[0085] In addition, the present application discloses, as an embodiment, a method for operating a plating device, wherein the stirring step causes the stirring component to reciprocate with a standard stroke, and the first bubble removal step and the second bubble removal step cause the stirring component to reciprocate with a bubble removal stroke that is shorter than the standard stroke.

[0086] In addition, the present application discloses as an embodiment a method for operating a plating device, wherein, when a shielding member is arranged within the reciprocating motion range of the above-mentioned stirring member, and a cutout corresponding to the shape of the above-mentioned shielding member is formed at a portion of the above-mentioned stirring member opposite to the above-mentioned shielding member, the above-mentioned first bubble removal step includes a reference bubble removal step of causing the above-mentioned stirring member to reciprocate around a reference position passing through the center of the above-mentioned resistor, and the above-mentioned second bubble removal step includes a peripheral bubble removal step of causing the above-mentioned stirring member to reciprocate around a position closer to the above-mentioned shielding member than the above-mentioned reference position.

[0087] In addition, the present application discloses, as an embodiment, a method for operating a plating device, which further includes: a shielding step, in which, during the execution of the above-mentioned plating step, the above-mentioned shielding component is moved between a shielding position between the above-mentioned resistor and the above-mentioned substrate, and a retreat position away from the above-mentioned resistor and the above-mentioned substrate; a reference stirring step, in which, when the above-mentioned shielding component is located at the above-mentioned shielding position, the above-mentioned stirring component is reciprocated with a first stroke; and an expansion stirring step, in which, when the above-mentioned shielding component is located at the above-mentioned retreat position, the above-mentioned stirring component is reciprocated with a second stroke longer than the above-mentioned first stroke.

[0088] In addition, the present application discloses, as one embodiment, an operating method of a plating device, wherein the second stroke is a stroke in which the range of the reciprocating motion of the stirring member is made longer on the shielding member side compared to the first stroke.

[0089] Description of Reference Numerals

[0090] 400…plating module; 410…plating tank; 430…anode; 440…substrate holder; 450…resistor; 480…stirring member (paddle); 480A…base end; 480B…stirring member; 480C…front end; 480D…incision; 481…shielding member; 482…driving mechanism; 484…paddle shaft; 485…shielding mechanism; 1000…plating device; Wf…substrate; Wf-a…plated surface.

Claims

1. A plating device, characterized in that: include: a plating tank configured to contain a plating solution; A substrate holder configured to hold the substrate with the plated surface facing downward; an anode, the anode being disposed in the plating tank; A resistor, the resistor being disposed between the substrate and the anode; a stirring member, the stirring member being arranged between the substrate and the resistor; as well as a driving mechanism configured to reciprocate the stirring member along the plated surface of the substrate, The driving mechanism is configured to perform a first bubble removal action of causing the stirring member to reciprocate around a first position and a second bubble removal action of causing the stirring member to reciprocate around a second position different from the first position when the substrate and the substrate holder are not immersed in the plating liquid contained in the plating tank during a debubbling process for removing bubbles attached to the resistor.

2. The plating device according to claim 1, characterized in that: The driving mechanism is configured to perform a stirring operation of causing the stirring member to reciprocate around a reference position passing through the center of the surface to be plated during a plating process on the surface to be plated of the substrate.

3. The plating device according to claim 2, characterized in that: The driving mechanism is configured to reciprocate the stirring member with a standard stroke during the stirring action, and reciprocate the stirring member with a bubble removal stroke shorter than the standard stroke during the first bubble removal action and the second bubble removal action.

4. The plating device according to claim 1, characterized in that: Further including: a shielding member, the shielding member being arranged within a range of reciprocating motion of the stirring member; and a shielding mechanism that enables the shielding member to move between a shielding position between the resistor and the substrate and a retreat position away from the resistor and the substrate, The stirring member has a cutout corresponding to the shape of the shielding member at a portion facing the shielding member. The driving mechanism is configured to perform, during a debubbling process for removing bubbles attached to the resistor, a reference bubble removal action in which the stirring member is caused to reciprocate around a reference position passing through the center of the resistor, and a peripheral bubble removal action in which the stirring member is caused to reciprocate around a position closer to the shielding member than the reference position.

5. The plating device according to claim 4, characterized in that: The driving mechanism is configured to perform, during the plating treatment of the plated surface relative to the substrate, a baseline stirring action of causing the stirring member to reciprocate with a first stroke when the shielding member is located at the shielding position, and to perform an expansion stirring action of causing the stirring member to reciprocate with a second stroke longer than the first stroke when the shielding member is located at the retreat position.

6. The plating device according to claim 5, characterized in that: The second stroke is a stroke in which the range of the reciprocating motion of the stirring member is extended on the shielding member side compared with the first stroke.

7. A method for operating a plating device, characterized in that: include: a supplying step of supplying a plating solution to a plating tank having a resistor disposed therein; a first bubble removing step in which bubbles attached to the resistor are removed by reciprocating a stirring member disposed above the resistor in the plating tank about a first position; as well as a second bubble removing step, in which bubbles attached to the resistor are removed by reciprocating the stirring member around a second position different from the first position; The first bubble removing step and the second bubble removing step are performed in a state where the substrate to be plated is not immersed in the plating solution.

8. The method for operating a plating device according to claim 7, characterized in that: Further including: an immersion step, in which the substrate with the plated surface facing downward is immersed in the plating solution in the plating tank; a plating step, in which a plating layer is formed on the plated surface of the substrate; as well as A stirring step in which, during the plating step, the stirring member is reciprocated around a reference position passing through the center of the surface to be plated.

9. The method for operating a plating device according to claim 8, characterized in that: The stirring step causes the stirring member to reciprocate with a standard stroke, In the first and second air bubble removal steps, the stirring member is reciprocated at a bubble removal stroke shorter than the standard stroke.

10. The method for operating a plating device according to claim 7, characterized in that: When a shielding member is arranged within the reciprocating range of the stirring member, and a cutout corresponding to the shape of the shielding member is formed in a portion of the stirring member facing the shielding member, The first air bubble removal step includes a reference air bubble removal step of causing the stirring member to reciprocate around a reference position passing through the center of the resistor. The second air bubble removal step includes a peripheral air bubble removal step of causing the stirring member to reciprocate around a position closer to the shielding member than the reference position.

11. The method for operating a plating device according to claim 10, characterized in that: Further including: an immersion step, in which the substrate with the plated surface facing downward is immersed in the plating solution in the plating tank; a plating step, in which a plating layer is formed on the plated surface of the substrate; a shielding step, in which, during the plating step, the shielding member is moved between a shielding position between the resistor and the substrate and a retreat position away from the resistor and the substrate; a reference stirring step, in which the stirring member is reciprocated in a first stroke when the shielding member is located at the shielding position; as well as and an expansion stirring step of causing the stirring member to reciprocate with a second stroke longer than the first stroke when the shielding member is located at the retreated position.

12. The operating method of the plating device according to claim 11, characterized in that: The second stroke is a stroke in which the range of the reciprocating motion of the stirring member is extended on the shielding member side compared with the first stroke.

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