Rotating target magnetron sputtering device and control method

Abstract

This application provides a rotating target magnetron sputtering device and control method. The device first measures the consumption rate of the rotating target material over time. Based on this consumption rate, the current of the electromagnetic assembly is dynamically adjusted to maintain a dynamic and stable magnetic field strength on the surface of the rotating target material. This ensures uniform consumption of the rotating target material, resulting in a more evenly distributed sputtered film during the actual sputtering process. The device then detects the uniformity of the sputtered film on the substrate. Based on this uniformity, the relative position of the electromagnetic assembly and the permanent magnet assembly is adjusted, thereby adjusting the magnetic flux density of the magnetic pole mechanism, further increasing the uniformity and stability of the sputtered film on the substrate.

Description

Technical Field

[0001] The present application relates to the technical field of magnetron sputtering, and in particular to a rotating target magnetron sputtering device and a control method. Background Art

[0002] Magnetron sputtering uses a magnetic field to control the movement of electrons. During their movement, the electrons continuously collide with argon atoms in the working gas (argon), ionizing them into a large number of argon ions. Under the influence of the electric field, the argon ions are accelerated and bombard the target material, sputtering a large number of target atoms that are deposited on the substrate to form a thin film. Target structures used in magnetron sputtering are generally divided into planar targets and rotary targets. Planar targets generally have a target material utilization rate of 20-30%, while rotary targets generally have a target material utilization rate of 80-90%. Currently, rotary targets are primarily used in the production of heterojunction solar photovoltaic cells. Rotary targets consume over time, resulting in a decreasing thickness and a decreasing distance between the target sputtering surface and the magnet. This causes changes in the magnetic field on the target sputtering surface, resulting in poor uniformity and stability in magnetron sputtering coatings. Furthermore, the magnetic field lines are most concentrated at the ends of the target, leading to the fastest target material consumption. Therefore, the existing technology is difficult to control and optimize the distribution and intensity of the magnetic field, resulting in uneven target material consumption and low utilization.

[0003] Based on the above problems, a Chinese invention patent with the publication number of "CN102644056B" and the patent name of "Magnetic control sputtering equipment for thin-film solar cells and its control system" is proposed. The patent installs end heads and target shaft support seats at both ends of the target shaft of the rotating target. The target shaft support seat is provided with a target shaft moving groove, and the target shaft can slide in the moving groove. A rack is installed at one end of the target shaft. The control system controls the motor to drive the gear rack to move, so that the magnet on the target shaft moves in the moving groove of the end head support seat to adjust the magnetic field on the surface of the sputtering target. The closed-loop control system automatically adjusts the distance between the magnet on the rotating target and the target material, adjusts the magnetic field on the surface of the target material, and ensures the uniformity of the thickness of the coated film and the consistency of the density. However, its structure is complex and the control error is large, and it is still difficult to ensure the uniformity of the sputtering target consumption and the stability of the sputtering deposition. Summary of the Invention

[0004] In order to solve the technical problems existing in the prior art, the first aspect of the present application provides a rotating target magnetron sputtering control method, the method comprising:

[0005] Obtaining the consumption rate of the rotating target;

[0006] Dynamically adjust the current of the electromagnetic assembly based on the consumption rate of the rotating target material so that the magnetic field intensity on the sputtering surface of the rotating target material is in a dynamically stable state;

[0007] Detect the uniformity of sputtered films on substrates;

[0008] Adjust the magnetic flux density of the magnetic pole structure based on the uniformity of the sputtered film to obtain a more uniform and stable sputtered film.

[0009] In a possible implementation of the first aspect, the current of the electromagnetic component is dynamically adjusted using the following formula: , where I is the excitation current, B (0) is the surface magnetic induction intensity of the permanent magnet component, L is the height of the electromagnetic component, L e is the effective magnetic path length, t is the time for target material consumption, V is the target material consumption rate, μ0 is the vacuum permeability, μ r is the relative magnetic permeability of the magnetic medium, N is the number of turns of the excitation coil, and L1 is the distance between the target surface axis and the electromagnetic assembly.

[0010] In a possible implementation of the first aspect, the detecting the uniformity of the sputtered film on the substrate includes: detecting the thickness and surface roughness of the sputtered film on the substrate by a detection module, and transmitting the detection data to the control module.

[0011] In a possible implementation of the first aspect, the magnetic pole mechanism includes: a permanent magnet component and two movable electromagnetic components symmetrically arranged on both sides of the permanent magnet component, and the control module controls the two electromagnetic components to synchronously approach or move away from the permanent magnet component, thereby increasing or decreasing the magnetic flux density of the magnetic pole mechanism.

[0012] In a possible implementation of the first aspect, the distance between the electromagnetic component and the permanent magnet component is dynamically adjusted using the following formula: , where Φ χ is the magnetic flux density per unit area of the target, B (0) is the magnetic induction intensity on the surface of the permanent magnet assembly, S is the unit area on the target, a is the distance between the electromagnetic assembly and the permanent magnet assembly, χ is the distance moved by the electromagnetic assembly, and L1 is the distance between the target surface axis and the electromagnetic assembly.

[0013] The second aspect of the present application provides a rotating target magnetron sputtering device for implementing the rotating target magnetron sputtering control method described in any of the above items, comprising: a rotating target material assembly, a main support tube coaxial with the rotating target material assembly is provided on the inner side of the rotating target material assembly, a magnetic pole mechanism is provided under the main support tube, the magnetic pole mechanism comprises: a permanent magnet assembly and two movable electromagnetic assemblies symmetrically arranged on both sides of the permanent magnet assembly, the rotating target magnetron sputtering device also comprises: a control module, a detection module for detecting the uniformity of the sputtered film on the substrate, and a power supply module for outputting current to the permanent magnet assembly, the control module is electrically connected to the power supply module and the permanent magnet assembly, respectively, and is used to control the current output by the power supply module to the permanent magnet assembly according to the consumption rate of the rotating target material, and at the same time control the relative distance between the electromagnetic assembly and the permanent magnet assembly according to the uniformity of the sputtered film on the substrate.

[0014] In a possible implementation of the second aspect, the magnetic pole mechanism also includes: a magnetic rail fixed under the main support tube, the permanent magnet assembly is fixedly arranged on the central axis of the magnetic rail, guide rails perpendicular to the central axis are provided on both sides of the magnetic rail, the electromagnetic assembly is slidably connected to the guide rails through a slider, and the electromagnetic assembly is also connected to a driving mechanism for driving the electromagnetic assembly to move relative to each other.

[0015] In a possible implementation of the second aspect, the permanent magnet assembly is a plurality of permanent magnets evenly distributed along the central axis of the magnetic track, and the electromagnetic assembly is an electromagnet symmetrically arranged on both sides of the permanent magnet.

[0016] In a possible implementation of the second aspect, the driving mechanism includes: an air pump assembly, a valve assembly, an encoder and a cylinder assembly, the valve assembly and the encoder are electrically connected to the control module respectively, the cylinder barrel of the cylinder assembly is fixed on the magnetic rail, and the piston rod of the cylinder assembly is connected to the electromagnetic assembly and drives the electromagnetic assembly to move.

[0017] In a possible implementation of the second aspect, the driving mechanism includes: a driving motor, the driving motor is connected to a cam rod through a gear, the cam group of the cam rod is engaged with the inner side of the slider of the electromagnetic assembly, the cam rod drives the electromagnetic assembly to move when it rotates, the inner side of the slider of the electromagnetic assembly is connected to the magnetic rail through an elastic element, and the electromagnetic assembly is reset under the elastic force of the elastic element after moving.

[0018] In a possible implementation of the second aspect, the detection module includes: a surface roughness detection unit and a plurality of thickness measuring units, and the thickness measuring units are distributed along a direction perpendicular to the movement of the substrate.

[0019] Compared with the prior art, the present invention has the following advantages:

[0020] The rotating target magnetron sputtering device and control method provided in the embodiments of the present application can dynamically adjust the current of the electromagnetic assembly according to the consumption rate of the rotating target material thickness over time, so that the magnetic field intensity on the sputtering surface of the rotating target material is in a dynamically stable state, ensuring the uniformity of the target material consumption, and obtaining a more evenly distributed sputtered deposited film during the actual sputtering process. Furthermore, the present application can detect the uniformity of the sputtered deposited film on the substrate in real time through the detection module, and then adjust the magnetic flux density on the rotating target material by moving the distance between the electromagnetic assembly and the permanent magnet assembly, further increasing the uniformity and stability of the sputtered deposited film on the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 is a flow chart of the rotary target magnetron sputtering control method of the present application;

[0022] Figure 2 It is a structural schematic diagram of the rotating target magnetron sputtering device of the present application;

[0023] Figure 3 It is a structural schematic diagram of the rotating target magnetron sputtering device of the present application;

[0024] Figure 4 This is an example diagram of current control of the control method of the present application;

[0025] Figure 5 This is a connection diagram of the rotary target magnetron sputtering device of the present application;

[0026] Figure 6 is a schematic cross-sectional structural diagram of Example 2 of the present application;

[0027] Figure 7 is a structural diagram of the magnetic pole mechanism of the second embodiment of the present application;

[0028] Figure 8 This application Figure 7 A local map of

[0029] Figure 9 This is a connection diagram of Example 1 of the present application;

[0030] Figure 10 It is a structural diagram of Example 1 of the present application;

[0031] Description of reference numerals:

[0032] 1. Rotating target assembly; 11. Rotating target; 12. Target support tube; 2. Main support tube; 21. Fastening ring; 3. Magnetic pole mechanism; 31. Permanent magnet assembly; 32. Electromagnetic assembly; 321. Slider; 33. Magnetic track; 331. Guide rail; 34. Waterproof cover; 4. Driving mechanism; 41. Air pump assembly; 42. Valve assembly; 43. Encoder; 44. Cylinder assembly; 45. Driving motor; 46. Cam rod; 47. Cam group; 48. Elastic element; 5. Power supply module; 6. Control module; 7. Detection module. DETAILED DESCRIPTION

[0033] To facilitate understanding of this application, the following will clearly and completely describe the technical solutions in the embodiments of this application in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0034] refer to Figure 1 As shown, this embodiment provides a rotating target magnetron sputtering control method, including:

[0035] Step S101, obtaining a consumption rate of the thickness of the rotating target 11 as it changes with usage time;

[0036] Step S102 , dynamically adjusting the current of the electromagnetic assembly 32 based on the consumption rate of the rotating target 11 , so that the magnetic field intensity on the sputtering surface of the rotating target 11 is in a dynamically stable state;

[0037] Step S103, detecting the uniformity of the sputtered film on the substrate;

[0038] Step S104 , adjusting the relative position of the electromagnetic assembly 32 and the permanent magnet assembly 31 based on the uniformity of the sputtered film, thereby adjusting the magnetic flux density of the magnetic pole mechanism 3 to obtain a more uniform and stable sputtering deposition effect.

[0039] The rotating target magnetron sputtering control method provided in the embodiment of the present application dynamically adjusts the current of the electromagnetic component 32 according to the consumption rate of the thickness of the rotating target material 11 that changes with the usage time, so that the magnetic field intensity on the sputtering surface of the rotating target material 11 is in a dynamically stable state, thereby ensuring the uniformity of the consumption of the rotating target material and obtaining a more evenly distributed sputtering deposited film during the actual sputtering process.

[0040] Specifically, the consumption rate of the thickness of the rotary target 11 as it changes with the use time can be obtained through experiments. The same model of rotary target 11 is selected and multiple tests are carried out on the same model of rotary target magnetron sputtering device to ensure that the rotary target 11 has the same initial thickness and quality, and multiple tests are carried out under the same sputtering conditions. At the end of each time interval, sputtering is stopped and the remaining thickness of the target is measured. The data of each measurement is recorded, including the time, sputtering conditions, and the remaining thickness of the rotary target 11. The data of multiple tests are statistically analyzed, and the average consumption rate and standard deviation are calculated to evaluate the stability and reliability of the results. For example, under the sputtering power condition of 20KW, the time for the rotary target 11 with a wall thickness of 9mm to be consumed is generally 1200h, and the consumption rate of the rotary target 11 is obtained to be 0.0075mm / h. For another example, under the sputtering power condition of 12KW, the time for the rotary target 11 with a wall thickness of 9mm to be consumed is generally 1300h, and the consumption rate of the rotary target 11 is obtained to be 0.0069mm / h. For another example, under the sputtering power condition of 9 kW, it generally takes 1100 h for the rotary target 11 with a wall thickness of 7 mm to be consumed, and the consumption rate of the rotary target 11 is 0.0063 mm / h.

[0041] In some embodiments, the consumption rate of the rotating target 11 is preset in the control module 6. During operation, the control module 6 dynamically adjusts the current output by the power module 5 to the electromagnetic assembly 32 based on the consumption rate of the rotating target 11 to ensure that the magnetic field intensity on the sputtering surface of the rotating target 11 remains in a dynamically stable state during the consumption process of the rotating target 11. For example, the current in the electromagnetic assembly 32 can be dynamically adjusted using the following formula: Where, reference Figure 3 As shown, I is the excitation current, B (0) is the surface magnetic induction intensity of the permanent magnet component 31, L is the height of the electromagnetic component 32, and L e is the effective magnetic path length, t is the time for target material consumption, V is the target material consumption rate, μ0 is the vacuum permeability, μ r is the relative magnetic permeability of the magnetic medium, N is the number of turns of the excitation coil, and L1 is the distance between the target surface and the surface of the electromagnetic assembly 32 on the axis.

[0042] refer to Figure 4 As shown, for example, a consumption rate V of 0.0075 mm / h is achieved for the rotating target 11. The control module 6 controls the power module 5 to dynamically increase the current I output to the electromagnetic assembly 32 from 0.82 A at the beginning of operation to 1.11 A after 1200 hours of operation. By controlling the current I in the electromagnetic assembly 32, the magnetic field intensity at the sputtering surface of the rotating target 11 is maintained in a dynamically stable state, resulting in a more uniformly distributed sputtered deposited film during the target sputtering process.

[0043] In some embodiments, reference Figure 5As shown, detecting the uniformity of the sputtered film on the substrate includes: detecting the thickness and surface roughness of the sputtered film on the substrate by the detection module 7, and transmitting the detection data to the control module 6. The detection module 7 adjusts the relative position of the electromagnetic component 32 and the permanent magnet component 31 according to the uniformity of the sputtered film, thereby adjusting the magnetic flux density of the magnetic pole mechanism 3, further improving the uniformity and stability of the sputtered film. Among them, the detection module 7 includes: a surface roughness detection unit and a plurality of thickness measuring units. The thickness measuring units are distributed along the direction perpendicular to the movement of the substrate and are used to detect the uniformity of the lateral sputtering deposition of the sputtered film on the substrate. The thickness measuring unit transmits the thickness of the sputtered film in the lateral direction of the substrate to the control module 6. When the thickness of the sputtered film in the lateral direction of the substrate is uneven. The control module 6 controls the electromagnetic component 32 corresponding to the substrate above the sputtered film thickness to move away from the permanent magnet component 31, increasing the distance between the electromagnetic component 32 and the permanent magnet component 31, thereby reducing the magnetic flux density on the rotating target 11. Alternatively, the control module 6 controls the electromagnetic assembly 32 corresponding to the substrate with a thin sputtered film to move toward the permanent magnet assembly 31, reducing the distance between the electromagnetic assembly 32 and the permanent magnet assembly 31, thereby increasing the magnetic flux density on the rotating target 11. At the same time, the control module 6 analyzes the thickness change of the sputtered film within a predetermined time period to determine the uniformity of the longitudinal sputtering deposition of the sputtered film on the substrate. If the thickness of the sputtered film becomes thinner within the predetermined time period, the electromagnetic assembly 32 is controlled to synchronously approach the permanent magnet assembly 31 to increase the magnetic flux density. If the thickness of the sputtered film becomes thicker within the predetermined time period, the electromagnetic assembly 32 is controlled to synchronously move away from the permanent magnet assembly 31 to reduce the magnetic flux density.

[0044] In the above embodiment, the formula for the movement distance of the electromagnetic assembly 32 of the magnetic flux density is: , where Φ χ is the magnetic flux density per unit area of the target, B (0) is the surface magnetic induction intensity of the permanent magnet assembly 31, S is the unit area on the target, a is the distance between the electromagnetic assembly 32 and the permanent magnet assembly 31, χ is the distance moved by the electromagnetic assembly 32, and L1 is the distance between the target surface axis and the electromagnetic assembly 32. The rotating target magnetron sputtering control method provided in the embodiment of the present application uses a detection module to detect the uniformity of the sputtered deposited film on the substrate in real time, and then adjusts the magnetic flux density on the rotating target 11 by moving the distance between the electromagnetic assembly 32 and the permanent magnet assembly 31, thereby further improving the uniformity and stability of the sputtered deposited film on the substrate.

[0045] refer to Figure 2As shown, this embodiment also discloses a rotary target magnetron sputtering apparatus, comprising: a rotary target assembly 1 disposed within a sputtering chamber. The rotary target assembly 1 includes a target support tube 12 and a cylindrical rotary target 11 mounted on the target support tube 12. The rotary target assembly 1 performs continuous, periodic, uniform rotational motion about its central axis. A substrate support platform is located below the rotary target assembly 1, and the substrate performs uniform translational motion on the support platform. A coaxial main support tube 2 is located inside the rotary target assembly 1. A magnetic pole mechanism 3 extending axially along the rotary target assembly 1 is connected to the main support tube 2 via a fastening ring 21. The magnetic pole mechanism 3 comprises a magnetic track 33 fixed below the main support tube 2, a permanent magnet assembly 31 fixedly mounted on the central axis of the magnetic track 33, and movable electromagnetic assemblies 32 symmetrically disposed on either side of the permanent magnet assembly 31. The interaction between the permanent magnet assembly 31 and the electromagnetic assembly 32 generates a closed annular magnetic field, and a working gas is introduced between the magnetic pole mechanism 3 and the substrate. Electrons collide with argon atoms in the working gas to ionize argon ions. Under the action of the electric field, the argon ions are accelerated to bombard the target material, sputtering out a large number of target atoms that are deposited on the substrate to form a thin film.

[0046] The rotating target magnetron sputtering apparatus also includes a power module 5, a control module 6, and a detection module 7. The control module 6 is electrically connected to the electromagnetic assembly 32 and the power module 5, respectively. The control module 6 is used to control the current output by the power module 5 to the electromagnetic assembly 32, thereby adjusting the magnetic field strength generated by the permanent magnet assembly 31 and the electromagnetic assembly 32, so that the magnetic field strength on the sputtering surface of the rotating target 11 is in a dynamically stable state. This increases the uniformity of the consumption of the rotating target 11 and improves the uniformity of the sputtered deposited film.

[0047] In the above implementation, two embodiments are listed to implement the above technical solution:

[0048] The first embodiment discloses a rotating target magnetron sputtering device, referring to Figures 9 and 10As shown, the present invention comprises a rotating target assembly 1 disposed within a sputtering chamber. The rotating target assembly 1 includes a target support tube 12 and a cylindrical rotating target 11 disposed on the target support tube 12. The rotating target assembly 1 performs continuous, periodic, uniform rotational motion about its central axis. A substrate support platform is disposed below the rotating target assembly 1, and the substrate performs uniform translational motion on the support platform. A coaxial main support tube 2 is disposed within the rotating target assembly 1. A magnetic pole mechanism 3 extending axially along the rotating target assembly 1 is connected to the main support tube 2 via a fastening ring 21. The magnetic pole mechanism 3 comprises a magnetic track 33 fixed below the main support tube 2, a permanent magnet assembly 31 fixedly disposed on the central axis of the magnetic track 33, movable electromagnetic assemblies 32 symmetrically disposed on either side of the permanent magnet assembly 31, and a waterproof cover 34 disposed outside the permanent magnet assembly 31, the electromagnetic assembly 32, and the magnetic track 33. The interaction between the permanent magnet assembly 31 and the electromagnetic assembly 32 generates a closed annular magnetic field. Working gas is introduced between the magnetic pole mechanism 3 and the substrate. Electrons strike argon atoms in the working gas, ionizing them into argon ions. These argon ions are accelerated by the electric field and bombard the target material, sputtering a large number of target atoms that are deposited on the substrate to form a thin film.

[0049] The rotating target magnetron sputtering apparatus also includes a power module 5, a control module 6, and a detection module 7. The control module 6 is electrically connected to the electromagnetic assembly 32 and the power module 5, respectively. The control module 6 is used to control the current output by the power module 5 to the electromagnetic assembly 32, thereby adjusting the magnetic field strength generated by the permanent magnet assembly 31 and the electromagnetic assembly 32, so that the magnetic field strength on the sputtering surface of the rotating target 11 is in a dynamically stable state. This increases the uniformity of the consumption of the rotating target 11 and improves the uniformity of the sputtered deposited film.

[0050] In this embodiment, the permanent magnet assembly 31 comprises a plurality of permanent magnets evenly distributed along the central axis of the magnetic track 33. The electromagnetic assembly 32 comprises electromagnets symmetrically arranged on either side of the permanent magnet, each at the same distance from the permanent magnet. The permanent magnet assembly 31 is fixedly mounted on the central axis of the magnetic track 33. Guide rails 331 extending perpendicular to and toward the sides of the magnetic track 33 are provided on either side of the magnetic track 33. The electromagnets are slidably connected to the guide rails 331 via sliders 321. The electromagnets are also connected to a drive mechanism 4 that drives the relative motion of the electromagnetic assembly 32. The control module 6 controls the drive mechanism 4 to move the electromagnets, thereby changing the relative distance between the electromagnets and the permanent magnets.

[0051] In this embodiment, the drive mechanism 4 includes: an air pump assembly 41, a valve assembly 42, an encoder 43 and a cylinder assembly 44, and the cylinder assembly 44 is connected to the air pump assembly 41 through the valve assembly 42. The valve assembly 42 is electrically connected to the control module 6, and the encoder 43 is arranged on the cylinder assembly 44 and electrically connected to the control module 6. Specifically, the cylinder assembly 44 is a plurality of groups of cylinders, each group of cylinders includes two cylinders arranged opposite to each other, and the number of cylinders is the same as the number of electromagnets and corresponds one to one. The valve assembly 42 includes the same number of solenoid valves as the number of cylinders, and each cylinder is connected to the air pump assembly 41 through a separate solenoid valve. The cylinder barrel of the cylinder is fixed on the magnetic rail 33 and is perpendicular to the central axis of the magnetic rail 33. The piston rod of the cylinder is connected to the electromagnet outside the permanent magnet and drives the electromagnet to move closer to or away from the permanent magnet.

[0052] In the above embodiment, the detection module 7 is arranged on the substrate outlet side of the rotating target assembly 1 and is electrically connected to the control module 6. The detection module 7 includes: a surface roughness detection unit and a plurality of thickness measuring units. The surface roughness detection unit is a surface roughness meter, and the thickness measuring unit is a laser interferometer thickness meter. The thickness measuring units are distributed along the direction perpendicular to the movement of the substrate and are used to detect the uniformity of the lateral sputtering deposition of the sputtered film on the substrate. The thickness measuring unit transmits the thickness of the sputtered film in the lateral direction of the substrate to the control module 6. When the thickness of the sputtered film in the lateral direction of the substrate is uneven, the control module 6 controls the electromagnet corresponding to the substrate above the sputtered film thickness to move outward. Specifically, the control module 6 controls the corresponding valve assembly 42 to open, and the piston rod of the cylinder assembly 44 extends outward, pushing the electromagnets on both sides of the corresponding permanent magnet to move outward synchronously, increasing the distance between the electromagnet and the permanent magnet, thereby reducing the magnetic flux density per unit area of the rotating target 11. Alternatively, the control module 6 controls the corresponding electromagnet above the thin sputtered film substrate to move inward. Specifically, the control module 6 controls the corresponding valve assembly 42 to reverse, and the piston rod of the cylinder assembly 44 retracts inward, driving the electromagnets on both sides of the permanent magnet to move inward synchronously, reducing the distance between the electromagnet and the permanent magnet, thereby increasing the magnetic flux density per unit area of the rotating target material 11.

[0053] Simultaneously, control module 6 analyzes the thickness variation of the sputtered film within a predetermined time period to determine the uniformity of the longitudinal sputtering deposition of the sputtered film on the substrate. If the thickness of the sputtered film decreases within the predetermined time period, control module 6 controls electromagnetic assembly 32 to move closer to permanent magnet assembly 31, thereby increasing the magnetic flux density. If the thickness of the sputtered film increases within the predetermined time period, control module 6 controls electromagnetic assembly 32 to move closer to permanent magnet assembly 31, thereby decreasing the magnetic flux density.

[0054] The second embodiment discloses a rotating target magnetron sputtering device. The difference between this embodiment and the first embodiment is that:

[0055] refer to Figures 6 to 8As shown, the drive mechanism 4 includes: a drive motor 45, which is connected to a cam rod 46 through a gear. The cam group 47 of the cam rod 46 engages with the outer side of the slider 321 of the electromagnetic assembly 32. When the cam rod 46 rotates, it drives the electromagnetic assembly 32 to move. The inner side of the slider 321 of the electromagnetic assembly 32 is connected to the magnetic track 33 through an elastic element 48. After the electromagnetic assembly 32 moves, it is reset under the elastic force of the elastic element 48.

[0056] Because electrons are accelerated toward the substrate in a magnetic field, they are affected by the Lorentz force and trapped in a plasma region near the target surface. The plasma density in this region is very high, and the electrons, under the influence of the magnetic field, orbit the target surface, increasing the probability of collisions with gas molecules and the target surface. Therefore, on both sides of the target, near the edges of the magnetic field, collisions between electrons and the target are more frequent, leading to faster target consumption in these areas. Therefore, in general, only the electromagnetic assemblies 32 corresponding to the two ends of the rotating target 11 need to be adjusted.

[0057] Specifically, two cam rods 46 are provided at each end of the magnetic track 33. Each cam rod 46 is connected to a separate drive motor 45. The cam assembly 47 on each cam rod 46 includes four cam groups, which are slidably connected to the four electromagnets on both sides of the permanent magnet. When the control module 6 controls the corresponding drive motor 45 to rotate forward, the drive motor 45 drives the cam rod 46 to rotate. The cam group 47 on the cam rod 46 pushes the electromagnet outside the corresponding permanent magnet outward, increasing the distance between the electromagnet and the permanent magnet, thereby reducing the magnetic flux density per unit area of the rotating target 11. When the control module 6 controls the corresponding drive motor 45 to rotate reversely, the drive motor 45 drives the cam rod 46 to rotate. The cam group 47 on the cam rod 46 pushes the electromagnet outside the permanent magnet inward, reducing the distance between the electromagnet and the permanent magnet, thereby increasing the magnetic flux density per unit area of the rotating target 11.

[0058] The above shows and describes the basic principles, main features, and advantages of the present application. Those skilled in the art should understand that the present application is not limited to the above embodiments. The above embodiments and descriptions are merely illustrative of the principles of the present application. Various changes and improvements may be made to the present application without departing from the spirit and scope of the present application. These changes and improvements are intended to fall within the scope of the present application. The scope of protection claimed in this application is defined by the appended claims and their equivalents.

Claims

1. A rotating target magnetron sputtering control method, characterized in that: The method comprises: Obtaining a consumption rate of the rotating target (11); Dynamically adjusting the current of the electromagnetic component (32) based on the consumption rate of the rotating target (11) so that the magnetic field intensity on the sputtering surface of the rotating target (11) is in a dynamically stable state; Detect the uniformity of sputtered films on substrates; Adjusting the magnetic flux density of the magnetic pole mechanism (3) based on the uniformity of the sputtered film to obtain a more uniform and stable sputtered film; The current of the electromagnetic component (32) is dynamically adjusted using the following formula: I=\frac {{B}_{(0)}\times {L}^{2}\times \left ( {{L}_{e}-Vt} \right )} {{\mu}_{0}\times {\mu}_{r}\times N\times \left [ {2\left ( {{L}_{1}-Vt} \right )+L} \right ]^{2}} , where I is the excitation current, B (0) is the surface magnetic induction intensity of the permanent magnet component (31), L is the height of the electromagnetic component (32), L e is the effective magnetic path length, t is the time for target material consumption, V is the target material consumption rate, μ0 is the vacuum permeability, μ r is the relative magnetic permeability of the magnetic medium, N is the number of turns of the excitation coil, and L1 is the distance between the target surface axis and the electromagnetic assembly (32); The magnetic pole mechanism (3) comprises: a permanent magnet component (31) and two movable electromagnetic components (32) symmetrically arranged on both sides of the permanent magnet component (31); the control module (6) controls the two electromagnetic components (32) to synchronously move closer to or farther away from the permanent magnet component (31), thereby increasing or decreasing the magnetic flux density of the magnetic pole mechanism (3); The distance between the electromagnetic component (32) and the permanent magnet component (31) is dynamically adjusted using the following formula: , where Φ χ is the magnetic flux density per unit area of the target, B (0) is the surface magnetic induction intensity of the permanent magnet component (31), S is the unit area on the target, a is the distance between the electromagnetic component (32) and the permanent magnet component (31), χ is the distance moved by the electromagnetic component (32), and L1 is the distance between the target surface axis and the electromagnetic component (32).

2. The rotating target magnetron sputtering control method according to claim 1, characterized in that: The detection of the uniformity of the sputtered film on the substrate comprises: detecting the thickness and surface roughness of the sputtered film on the substrate by a detection module (7), and transmitting the detection data to the control module (6).

3. A rotating target magnetron sputtering device, used to implement the rotating target magnetron sputtering control method according to any one of claims 1 to 2, characterized in that: include: A rotating target assembly (1) is provided with a main support tube (2) coaxial with the rotating target assembly (1) on its inner side, a magnetic pole mechanism (3) is provided below the main support tube (2), the magnetic pole mechanism (3) comprises: a permanent magnet assembly (31) and two movable electromagnetic assemblies (32) symmetrically arranged on both sides of the permanent magnet assembly (31), the rotating target magnetron sputtering device further comprises: a control module (6), a detection module (7) for detecting the uniformity of the sputtered film on the substrate, and a power supply module (5) for outputting current to the permanent magnet assembly (31), the control module (6) being electrically connected to the power supply module (5) and the permanent magnet assembly (31) respectively, and being used to control the current output by the power supply module (5) to the permanent magnet assembly (31) according to the consumption rate of the rotating target (11), and at the same time controlling the relative distance between the electromagnetic assembly (32) and the permanent magnet assembly (31) according to the uniformity of the sputtered film on the substrate.

4. The rotating target magnetron sputtering device according to claim 3, characterized in that: The magnetic pole mechanism (3) further comprises: a magnetic rail (33) fixed below the main support tube (2); the permanent magnet assembly (31) is fixedly arranged on the central axis of the magnetic rail (33); guide rails (331) perpendicular to the central axis are provided on both sides of the magnetic rail (33); the electromagnetic assembly (32) is slidably connected to the guide rails (331) via a slider (321); and the electromagnetic assembly (32) is further connected to a driving mechanism (4) for driving the relative movement of the electromagnetic assembly (32).

5. The rotating target magnetron sputtering device according to claim 4, characterized in that: The permanent magnet assembly (31) is a plurality of permanent magnets evenly distributed along the central axis of the magnetic track (33), and the electromagnetic assembly (32) is an electromagnet symmetrically arranged on both sides of the permanent magnet.

6. The rotating target magnetron sputtering device according to claim 4, characterized in that: The driving mechanism (4) comprises: an air pump assembly (41), a valve assembly (42), an encoder (43) and a cylinder assembly (44); the valve assembly (42) and the encoder (43) are electrically connected to the control module (6) respectively; the cylinder barrel of the cylinder assembly (44) is fixed on the magnetic rail (33); the piston rod of the cylinder assembly (44) is connected to the electromagnetic assembly (32) and drives the electromagnetic assembly (32) to move.

7. The rotating target magnetron sputtering device according to claim 4, characterized in that: The driving mechanism (4) comprises a driving motor (45), the driving motor (45) being connected to a cam rod (46) via a gear, the cam group (47) of the cam rod (46) being engaged with the inner side of a slider (321) of the electromagnetic assembly (32), the electromagnetic assembly (32) being driven to move when the cam rod (46) rotates, the inner side of the slider (321) of the electromagnetic assembly (32) being connected to the magnetic track (33) via an elastic element (48), and the electromagnetic assembly (32) being reset under the elastic force of the elastic element (48) after moving.

8. The rotating target magnetron sputtering device according to claim 3, characterized in that: The detection module (7) comprises: a surface roughness detection unit and a plurality of thickness measuring units, wherein the thickness measuring units are distributed along a direction perpendicular to the movement of the substrate.

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