Semiconductor processing apparatus

Abstract

The application provides a semiconductor process equipment, which comprises a semiconductor process chamber and a gas inlet device for delivering process gas to the semiconductor process chamber. The gas inlet device is used for delivering process gas to the semiconductor process chamber and comprises a device body and a gas amount adjusting mechanism. The device body has a delivery channel and an annular channel arranged around the delivery channel. The sidewall of the delivery channel is provided with a plurality of gas inlets which are communicated with the annular channel. The device body is connected with a gas inlet pipeline for delivering process gas. The gas amount adjusting mechanism can rotate in the delivery channel and shield the gas inlets. The gas inlet pipeline delivers process gas into the annular channel, and the annular channel can redistribute the process gas. The gas amount adjusting mechanism can shield the gas inlets, change the distribution of the process gas in each gas inlet, and then make the process gas enter the delivery channel through the gas inlets, so that the distribution of the process gas can meet the requirement of uniform film growth.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor manufacturing, in particular, to a semiconductor process equipment. BACKGROUND

[0002] In the process of integrated circuit manufacturing, thin film deposition is a key technology that affects the reliability of semiconductor devices and the yield of products. Thin film deposition technology uses one or more gas phase compounds or elements containing thin film elements to react on the wafer surface to generate a thin film. Currently, thin film deposition mainly uses chemical vapor deposition technology. Chemical vapor deposition includes 8 main steps: 1) gas transmission to the deposition area: the reaction gas flows from the inlet area of the reaction chamber to the deposition area on the wafer surface; 2) formation of thin film precursor: gas phase reaction leads to the formation of film precursor and by-products; 3) thin film precursor adheres to the surface of the silicon wafer; 4) thin film precursor adheres to the surface of the silicon wafer; 5) thin film precursor diffuses to the surface of the growth area; 6) surface chemical reaction to deposit thin film and produce by-products; 7) removal of by-products from the surface; 8) removal of by-products from the reaction chamber.

[0003] The reaction process is affected by many factors such as temperature, gas volume of reactants, etc. In existing semiconductor process equipment, there are often problems such as uneven distribution of reaction gas concentration and uneven temperature distribution in the chamber, which affect the reaction rate and lead to poor uniformity of wafer surface thin film thickness, and also cause differences in the filling status of through holes or contact holes at different positions of the wafer, affecting product yield.

[0004] Therefore, how to improve the uniformity of thin film growth is a technical problem that those skilled in the art urgently need to solve. SUMMARY

[0005] The present application aims to at least solve one of the technical problems existing in the prior art, and proposes a semiconductor process equipment, which comprises a gas inlet device capable of adjusting the distribution of process gas, thereby improving the uniformity of thin film growth.

[0006] To achieve the purpose of the present application, a semiconductor process equipment is provided, comprising a semiconductor process chamber and a gas inlet device for conveying process gas to the semiconductor process chamber, the gas inlet device comprising a device body and a gas volume adjusting mechanism, the device body having a conveying channel, the device body further having an annular channel surrounding the outer periphery of the conveying channel, the side wall of the conveying channel being provided with a plurality of gas inlet holes communicating with the annular channel, the device body being connected with a gas inlet pipeline, the gas inlet pipeline communicating with the annular channel, the annular channel being used for conveying the process gas into the conveying channel through the gas inlet holes;

[0007] The gas amount adjusting mechanism is capable of rotating in the conveying channel and shielding the gas inlet holes to adjust the distribution of the process gas.

[0008] In some embodiments, the gas amount adjusting mechanism comprises a baffle assembly and a driving assembly, the baffle assembly is arranged in the conveying channel, and the driving assembly is used to drive the baffle assembly to rotate to shield the gas inlet holes.

[0009] In some embodiments, the number of the baffle assemblies is less than or equal to the number of the gas inlet holes, and each baffle assembly is capable of rotating within a preset angle to shield the gas inlet holes within the preset angle.

[0010] In some embodiments, the baffle assembly comprises a baffle, a connecting rod and a rotating shaft, wherein,

[0011] The rotating shaft is rotatably arranged along the axial direction of the conveying channel, the rotating shafts of the baffle assemblies are spaced from each other, the rotating shafts are connected with first transmission members for transmission cooperation with the driving assembly, the connecting rod extends to the inner side wall of the conveying channel, the baffle is located at the end of the connecting rod away from the rotating shaft and is attached to the side wall of the conveying channel to partially or completely shield the gas inlet holes.

[0012] In some embodiments, the number of the driving assemblies is equal to the number of the baffle assemblies, the driving assembly comprises a driving motor and a driving shaft, the driving motor is fixed to the outer side wall of the device body, the driving shaft penetrates through the side wall of the device body and is transmission connected with the first transmission members one by one through second transmission members.

[0013] In some embodiments, the driving assembly comprises a driving motor and a driving shaft, the driving motor is movably connected with the outer side wall of the device body, the driving shaft penetrates through the side wall of the device body and is transmission connected with the first transmission members alternatively through second transmission members to drive the corresponding baffles to shield the gas inlet holes.

[0014] In some embodiments, the driving assembly further comprises a sealing mounting plate, the side wall of the device body is provided with a mounting hole, the driving motor is sealingly connected with the device body through the sealing mounting plate, and the driving shaft is transmission cooperated with the rotating shaft through the mounting hole.

[0015] In some embodiments, the number of the gas inlet holes is more than 3, and the gas inlet holes are arranged to avoid the gas inlet pipeline.

[0016] In some embodiments, a susceptor and a pin mechanism arranged in the semiconductor process chamber are further included, the susceptor is used to support a wafer, the susceptor has a pin hole penetrating therethrough, and the pin mechanism is capable of penetrating through the pin hole to support the wafer.

[0017] The position of the orthogonal projection of the air inlet on the base corresponds to the position of the ejector pin hole.

[0018] In some embodiments, the surfaces of the baffle assembly and the drive shaft are provided with a protective layer to prevent corrosion from the process gas.

[0019] This application has the following beneficial effects:

[0020] The semiconductor process equipment provided in this application includes an inlet device and a semiconductor process chamber. The inlet device is used to deliver process gas to the semiconductor process chamber. The inlet device includes a device body and a gas flow regulating mechanism. The device body has a conveying channel and an annular channel. The annular channel is spaced around the outer periphery of the conveying channel. The sidewall of the conveying channel is provided with multiple inlet holes for connecting the annular channel and the conveying channel. Each inlet hole is arranged along the circumference of the conveying channel. The device body is connected to an inlet pipe, which is connected to the annular channel. The annular channel is used to deliver the process gas into the conveying channel through the inlet holes. The gas flow regulating mechanism can rotate within the conveying channel and block the inlet holes to regulate the distribution of the process gas.

[0021] The process gas first enters the annular channel along the inlet pipe. The annular channel allows for the redistribution of the process gas circumferentially within the delivery channel. The gas flow regulation mechanism can block the inlet holes, changing their area and thus altering the distribution of the process gas within each inlet hole. Subsequently, the process gas enters the delivery channel through the inlet holes, ensuring that its distribution meets the requirements for uniform film growth. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the structure of a semiconductor process equipment in one specific embodiment of this application;

[0023] Figure 2 for Figure 1 Sectional view of AA;

[0024] Figure 3 for Figure 1 A top view of the structure of the central air intake device and heating base;

[0025] Figure 4 for Figure 1 Axial cross-sectional view of the central air intake device;

[0026] Figure 5 for Figure 4 Schematic diagram of the middle baffle assembly;

[0027] Figure 6 for Figure 4 A schematic diagram showing the middle baffle blocking the air intake.

[0028] in, Figures 1 to 6 The attached figures are labeled as follows:

[0029] 1-Remote plasma generator; 2-Inlet device; 12-Device body; 211-Sealing groove; 22-Conveying channel; 23-Annular channel; 24-Inlet port; 25-Gas volume regulating mechanism; 251-Baffle; 252-Connecting rod; 253-Rotating shaft; 254-First bevel gear; 255-Drive shaft; 256-Drive motor; 257-Sealing mounting plate; 3-Inlet pipeline; 4-Flow equalization grid; 5-Semiconductor process chamber; 6-Heating base; 61-Ejector pin hole. Detailed Implementation

[0030] To enable those skilled in the art to better understand the technical solution of this application, the semiconductor process equipment and its air intake device provided in this application will be described in detail below with reference to the accompanying drawings.

[0031] The semiconductor process equipment provided in this application includes an inlet gas device 2 and a semiconductor process chamber 5. The inlet gas device 2 is used to supply process gas to the semiconductor process chamber 5. An inlet gas pipe 3 is connected to the side wall of the inlet gas device 2, and the process gas is delivered to the semiconductor process chamber 5 through the inlet gas device 2. A base is provided in the semiconductor process chamber 5 for support. A flow equalization grid 4 is also provided in the semiconductor process chamber 5, located between the inlet gas device 2 and the base. The flow equalization grid 4 can mix and equalize the process gas, making the process gas more uniformly distributed in the semiconductor process chamber 5. Because the concentration of process gas is high in the area near the inlet gas pipe 3, the concentration of process gas in this area remains high even after passing through the flow equalization grid 4, affecting the uniformity of the process gas distribution, and thus affecting the uniformity of the thickness of the thin film generated during the process.

[0032] in addition, Figure 1 In the specific embodiment shown, the air intake device 2 is disposed at the top of the semiconductor process chamber 5, connecting the semiconductor process chamber 5 to the remote plasma generator 1. The remote plasma generator 1 can deliver plasma to the semiconductor process chamber 5 through the air intake device 2. In other specific embodiments, plasma may also be generated within the semiconductor process chamber 5, which is not limited here.

[0033] like Figure 1As shown, the gas inlet device 2 comprises a device body 21 and a gas amount adjusting mechanism 25. The device body 21 has a delivery channel 22 which is in communication with the interior of the semiconductor process chamber 5 for delivering process gas and plasma into the semiconductor process chamber 5. The device body 21 further has an annular channel 23 which surrounds the delivery channel 22. The sidewall of the delivery channel 22 is provided with a plurality of gas inlet holes 24 which are arranged along the circumferential direction of the delivery channel 22 for connecting the annular channel 23 and the delivery channel 22. The device body 21 is connected with a gas inlet pipeline 3 which is in communication with the annular channel 23. Process gas passes through the annular channel 23 and the gas inlet holes 24 into the delivery channel 22. The annular channel 23 can mix and uniformize the process gas, improving the uniformity of the process gas in the circumferential direction of the annular channel 23. The gas inlet holes 24 are distributed along the circumferential direction of the delivery channel 22, which can adjust the distribution of the process gas in the circumferential direction of the delivery channel 22, avoiding the process gas from concentrating in a certain area, and improving the uniformity of the process gas distribution.

[0034] The distribution of the gas inlet holes 24 can improve the uniformity of the process gas distribution in the circumferential direction of the delivery channel 22, but the positions of the gas inlet holes 24 are fixed and cannot be adjusted according to the actual process conditions. The gas amount adjusting mechanism 25 can rotate in the delivery channel 22 and block the gas inlet holes 24. By changing the area of the gas inlet holes 24, the flow rate of the process gas passing through the gas inlet holes 24 is adjusted, and the distribution of the process gas is further adjusted to meet the requirements of uniform film growth.

[0035] In this embodiment, the device body 21 has an annular channel 23 which surrounds the delivery channel 22 and is in communication with the delivery channel 22 through the gas inlet holes 24 which are distributed along the circumferential direction of the delivery channel 22. Process gas re-distributes along the annular channel 23 in the circumferential direction of the delivery channel 22 and then passes through the gas inlet holes 24 into the delivery channel 22, improving the uniformity of the process gas distribution in the delivery channel 22. The gas inlet adjusting mechanism can rotate in the delivery channel 22, block the gas inlet holes 24, and adjust the flow rate of the process gas passing through each gas inlet hole 24, further adjusting the distribution of the process gas in the circumferential direction of the delivery channel 22, and improving the uniformity of film growth.

[0036] In some embodiments, the number of gas inlet holes 24 is more than 3. The concentration of process gas near the outlet of the gas inlet pipeline 3 is high, and the gas inlet holes 24 are arranged to avoid the gas inlet pipeline 3 to avoid high-concentration process gas directly passing through the gas inlet holes 24 into the delivery channel 22. Process gas needs to flow at least a certain distance along the annular channel 23 before it can pass through the gas inlet holes 24 into the delivery channel 22.

[0037] Optionally, Figure 2In the specific embodiment shown, there are seven air inlets 24. Each air inlet 24 is positioned to avoid direct opposition to the outlet of the air inlet pipe 3. Two air inlets 24 are located close to the outlet of the air inlet pipe 3, with a large circumferential distance between them. This extends the travel distance of the process gas along the annular channel 23 after it flows out of the air inlet pipe 3, preventing high concentrations of process gas from concentrating in a certain area and improving the uniformity of process gas distribution. The remaining air inlets 24 can be evenly distributed on the side away from the air inlet pipe 3, where the two air inlets 24 closest to the air inlet pipe 3 are located. Of course, the user can set the number and distribution of the air inlets 24 as needed, and this is not limited here.

[0038] Optionally, the base in the semiconductor process chamber 5 is a heating base 6, which can be used to support and heat the wafer. The heating base 6 is provided with a pin hole 61, through which a pin mechanism can pass to support the wafer placed on the heating base 6, thereby driving the wafer to move up and down. During wafer processing, the heating base 6 needs to heat the wafer, and the heating temperature also affects the growth rate of the thin film on the wafer surface; the higher the temperature, the faster the thin film growth rate. The area near the pin hole 61 of the heating base 6 is often at a lower temperature, resulting in slower thin film growth. To ensure uniform thin film growth, it is necessary to increase the concentration of process gas in this area. Therefore, in this application, the positions of some of the gas inlets 24 can correspond to the positions of the pin holes 61, used to deliver process gas to the vicinity of the pin hole 61 of the gas inlet 24, increasing the concentration of process gas near the pin hole 61, and compensating for the impact of the low temperature in the area near the pin hole 61 on the thin film growth rate.

[0039] like Figure 3 As shown, there are three ejector pin holes 61. The orthographic projection of the outlet of the air inlet pipe 3 onto the heating base 6 is close to one of the ejector pin holes 61, resulting in a higher concentration of process gas in the area where the ejector pin hole 61 is located. The orthographic projections of the two air inlet holes 24 in the air inlet device 2 onto the heating base 6 are respectively positioned close to the other two ejector pin holes 61, increasing the concentration of process gas near the two ejector pin holes 61 and thus improving the uniformity of thin film growth. If the air inlet pipe 3 does not correspond to the ejector pin holes 61, then three air inlet holes 24 can be positioned with their orthographic projections onto the heating base 6 respectively close to the other three ejector pin holes 61. Of course, the number and distribution of ejector pin holes 61 are not limited to this; other correspondences between the air inlet holes 24 and the ejector pin holes 61 can also be used, which are not limited here.

[0040] In the embodiment, the air inlet holes 24 are arranged to avoid the outlet of the air inlet pipe 3, so that the process gas flowing out of the air inlet pipe 3 does not directly pass through the air inlet holes 24 into the conveying channel 22 to form a high concentration area of the process gas in the conveying channel 22, thereby improving the uniformity of the distribution of the process gas in the conveying channel 22. In addition, the normal projection of part of the air inlet holes 24 on the heating base 6 corresponds to the setting of the thimble hole 61 of the heating base 6, so that the concentration of the process gas near the thimble hole 61 is increased to offset the influence of the lower temperature near the thimble hole 61 on the film growth rate, thereby further improving the uniformity of the film growth.

[0041] In some embodiments, the gas flow adjusting mechanism 25 includes a baffle assembly and a driving assembly. As shown in Figure 4 , the baffle assembly is rotatably arranged in the conveying channel 22. The driving assembly is used to drive the baffle assembly to rotate, so that the baffle assembly blocks the air inlet holes 24, thereby adjusting the area of the air inlet holes 24.

[0042] Optionally, the number of baffle assemblies is less than or equal to the number of air inlet holes 24, and each baffle assembly can rotate within a preset angle. The preset angle corresponding to the baffle assembly has at least one air inlet hole 24, and the baffle assembly can partially or completely block the air inlet hole 24 to adjust the flow of the process gas passing through the air inlet hole 24. Figure 5 In the embodiment shown, the number of baffle assemblies is 4, and the preset angle corresponding to each baffle assembly is 90°. The four baffle assemblies can block the air inlet holes 24 within the range of 360° in the circumferential direction of the conveying channel 22. Of course, the user can also set the number of baffle assemblies according to needs, which is not limited herein.

[0043] Optionally, the baffle assembly includes a baffle 251, a connecting rod 252, and a rotating shaft 253. As shown in Figure 5 , the rotating shaft 253 is rotatably arranged along the axial direction of the conveying channel 22, and the rotating shafts 253 of the baffle assemblies are spaced from each other. The upper end of the rotating shaft 253 is provided with a first transmission member for transmission cooperation with the driving assembly. The connecting rod 252 is connected to the lower end of the rotating shaft 253, and the connecting rod 252 and the rotating shaft 253 have a certain angle therebetween, preferably being arranged perpendicularly. The connecting rod 252 extends towards the side wall of the conveying channel 22, and the baffle 251 is located at the end of the connecting rod 252 away from the rotating shaft 253 and abuts against the side wall of the conveying channel 22. The rotating shaft 253 rotates under the drive of the driving assembly and drives the connecting rod 252 to swing, thereby moving the baffle 251 along the circumferential direction of the conveying channel 22 to block the air inlet holes 24. The area of the baffle 251 is usually larger than the area of the air inlet hole 24, as shown in Figure 6As shown, the baffle 251 can completely shield the air inlet hole 24. During use, the baffle 251 can partially shield or completely shield the air inlet hole 24 as needed. Of course, the baffle assembly can also be provided in other structures, for example, multiple baffle assemblies can share one rotating shaft 253, and the first transmission member can be distributed along the axial direction of the rotating shaft 253, which is not limited herein.

[0044] Optionally, the driving assembly includes a driving motor 256 and a driving shaft 255, as shown in the figure. Figure 4 As shown, the driving motor 256 is arranged outside the device body 21, and the driving shaft 255 is connected with the shaft of the driving motor 256. The side wall of the device body 21 is provided with a mounting hole, and the driving shaft 255 extends into the conveying channel 22 through the mounting hole. The end of the driving shaft 255 away from the driving motor 256 is provided with a second transmission member, which cooperates with the first transmission member to drive the rotating shaft 253 to rotate. The first transmission member and the second transmission member can be a first bevel gear 254 and a second bevel gear (not shown in the figure).

[0045] Optionally, the driving assembly further includes a sealing mounting plate 257, and the driving motor 256 is sealingly connected with the device body 21 through the sealing mounting plate 257 to avoid leakage of process gas or plasma. In addition, the outer side wall of the device body 21 is also provided with a sealing groove 211 arranged around the mounting hole, and a dynamic-static ring seal or a packing seal or other sealing structure can be arranged in the sealing groove 211 to further improve the sealing performance between the driving assembly and the device body 21 and ensure the safe operation of the air inlet device 2.

[0046] In one specific embodiment of the present application, the number of driving assemblies is equal to the number of baffle assemblies. Each driving assembly cooperates with one baffle assembly to drive the baffle assembly to rotate.

[0047] In the specific embodiment, each baffle assembly rotates independently to shield the air inlet hole 24 within the preset angle. The baffle assemblies do not interfere with each other, which improves the flexibility of the air volume adjusting mechanism 25 and further improves the accuracy of the process gas distribution control.

[0048] In another specific embodiment of the present application, one driving assembly is used to control the rotation of each baffle assembly. The driving motor 256 is movably connected with the outer side wall of the device body 21, and the driving shaft 255 extends into the conveying channel 22 through the mounting hole. During operation, the driving shaft 255 can selectively engage with the first bevel gear 254 through the second bevel gear to drive the corresponding baffle assembly to rotate. After the adjustment of the baffle assembly is completed, the position of the second bevel gear can be switched to engage with other first bevel gears 254 to adjust the corresponding baffle assembly.

[0049] In the embodiment, the plurality of baffle assemblies are independently rotated under the driving of the driving assembly, which simplifies the structure of the gas volume adjusting device, occupies less space, and is convenient to arrange.

[0050] Optionally, the baffle assembly and the surface of the driving shaft 255 are provided with a protective layer to prevent the baffle assembly and the driving shaft 255 from being corroded by the process gas or plasma. The baffle assembly and the driving shaft 255 can be made of an aluminum structure after passivation. The aluminum structure has the advantages of light weight and high structural strength, and can reduce the weight of the gas volume adjusting mechanism 25. The protective layer can be an aluminum fluoride film. The dense aluminum fluoride film has strong corrosion resistance, which can effectively protect the baffle assembly and the driving shaft 255. Moreover, the aluminum fluoride film has good connectivity with the aluminum structure, which can avoid the protective layer from falling off.

[0051] In the embodiment, the baffle assembly is a plurality of baffle assemblies, and each baffle assembly is independently movable. The action of one baffle assembly does not affect other baffle assemblies, so that the action of the gas volume adjusting device is more flexible, and the accuracy of the process gas distribution control is improved. Of course, the user can also set a plurality of baffle assemblies to be connected with each other and to move together under the driving of the driving assembly, which is not limited herein.

[0052] It can be understood that the above embodiments are only exemplary embodiments for illustrating the principles of the present application, and the present application is not limited thereto. Various modifications and improvements can be made by those skilled in the art without departing from the spirit and essence of the present application, and these modifications and improvements are also considered to be within the protection scope of the present application.

Claims

1. A semiconductor process apparatus, characterized by, The semiconductor process chamber includes a device body having a delivery channel, the device body further has an annular channel surrounding the outer periphery of the delivery channel, the side wall of the delivery channel is provided with a plurality of gas inlets communicating with the annular channel, the device body is connected with a gas inlet pipeline, the gas inlet pipeline communicates with the annular channel, and the annular channel is used for sending the process gas into the delivery channel through the gas inlets. The gas volume adjusting mechanism can rotate in the delivery channel and shield the gas inlets to adjust the distribution of the process gas.

2. The semiconductor process apparatus according to claim 1, wherein The gas volume adjusting mechanism includes a baffle assembly and a driving assembly, the baffle assembly is arranged in the delivery channel, and the driving assembly is used for driving the baffle assembly to rotate to shield the gas inlets.

3. The semiconductor process apparatus according to claim 2, wherein The number of the baffle assemblies is less than or equal to the number of the gas inlets, and each baffle assembly can rotate within a preset angle to shield the gas inlets within the preset angle.

4. The semiconductor process apparatus according to claim 2, wherein The baffle assembly includes a baffle, a connecting rod and a rotating shaft, wherein The rotating shaft is rotatably arranged along the axial direction of the delivery channel, the rotating shafts of the baffle assemblies are spaced from each other, the rotating shaft is connected with a first transmission member for transmission cooperation with the driving assembly, the connecting rod extends to the inner side wall of the delivery channel, the baffle is located at the end of the connecting rod away from the rotating shaft and is attached to the side wall of the delivery channel to partially shield or completely shield the gas inlets.

5. The semiconductor process apparatus according to claim 4, wherein The number of the driving assemblies is equal to the number of the baffle assemblies, the driving assembly includes a driving motor and a driving shaft, the driving motor is fixed to the outer side wall of the device body, the driving shaft penetrates the side wall of the device body and is transmission connected with the first transmission member through a second transmission member one by one.

6. The semiconductor process apparatus according to claim 4, wherein The driving assembly includes a driving motor and a driving shaft, the driving motor is movably connected with the outer side wall of the device body, the driving shaft penetrates the side wall of the device body and is transmission connected with the first transmission member through a second transmission member alternatively to drive the corresponding baffle to shield the gas inlets.

7. The semiconductor process apparatus according to claim 5 or 6, characterized by The driving assembly further includes a sealing mounting plate, the side wall of the device body is provided with a mounting hole, the driving motor is sealingly connected with the device body through the sealing mounting plate, and the driving shaft is transmission cooperated with the rotating shaft through the mounting hole.

8. The semiconductor process apparatus according to claim 1, wherein The number of the gas inlets is more than three, and the gas inlets avoid the gas inlet pipeline.

9. The semiconductor process apparatus according to claim 8, wherein Further including a susceptor and a pin mechanism arranged in the semiconductor process chamber, the susceptor is used for supporting a wafer, the susceptor has a pin hole penetrating therethrough, and the pin mechanism can penetrate the pin hole to support the wafer. The position of the normal projection of part of the gas inlets on the susceptor corresponds to the position of the pin hole.

10. The semiconductor process apparatus according to claim 5 or 6, characterized by The surfaces of the baffle assembly and the driving shaft are provided with a protective layer for preventing corrosion of the process gas.

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