Intelligent control method, system and storage medium of separated IGBT module

Abstract

The present invention provides an intelligent control method, system and storage medium for a separated IGBT module. First, first voltage information is obtained, and the on-off state of a power isolation switch is adjusted according to the first voltage information; when the power isolation switch is in a closed state, second voltage information is obtained, and first temperature information is obtained according to the second voltage information; then, first gain information is obtained according to the first temperature information; finally, third voltage information is obtained, and first current information is obtained according to the third voltage information and the first gain information, so as to switch the drive control state, thereby realizing the function of intelligently controlling the output state according to the voltage, current and temperature information of the IGBT module, so as to improve the reliability of the module.

Description

Technical Field

[0001] The present invention relates to the field of electronics, and more specifically, to an intelligent control method, system and storage medium for a separated IGBT module. Background Art

[0002] IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, is a composite fully controlled voltage-driven power semiconductor device composed of a bipolar transistor and an insulated gate field effect transistor, with the advantages of high input impedance and low on-state voltage drop. IGBT modules are usually composed of multiple IGBTs and diodes in an I-type three-level topology or a T-type three-level topology.

[0003] At present, IGBT modules, as the core components of power electronic power conversion, are still widely used in industrial drive, new energy, rail transit and other fields. Low-power converters are generally implemented using IGBT discrete components, medium-power converters are implemented using IGBT discrete components in parallel or integrated IGBT modules, and high-power converters are implemented using integrated IGBT modules. The integrated IGBT modules used in medium and high-power applications are generally provided by manufacturers. Since the chip is integrated inside the package, the switching characteristics are solidified; and generally there is no integrated IGBT drive, current sampling and other functions, which need to be added to the system. At present, some applications also use a large number of single tubes in parallel to realize high-power converters, but in actual production, there are disadvantages such as difficult processing, low production efficiency and low yield. Therefore, there is an urgent need for an intelligent control technology for separate IGBT modules that can flexibly control the output and automatically adjust the output according to current and temperature sampling. Summary of the invention

[0004] In view of the above problems, the purpose of the present invention is to provide an intelligent control method, system and storage medium for a separate IGBT module, which uses discrete IGBTs and diodes to form two parallel I-type three-level topologies, and adjusts and controls the drive circuit based on real-time acquisition of input voltage, output current and temperature values, thereby increasing the reliability of the module.

[0005] A first aspect of the present invention provides an intelligent control method for a separate IGBT module, the method comprising:

[0006] Acquiring first voltage information;

[0007] Determining whether the first voltage information exceeds a preset first voltage threshold;

[0008] If yes, adjusting the on / off state of the power isolation switch according to the first voltage information;

[0009] When the power isolation switch is in the closed state,

[0010] Acquiring second voltage information;

[0011] obtaining first temperature information according to the second voltage information;

[0012] According to the first temperature information, searching a preset temperature gain correspondence table to determine the first gain information;

[0013] Acquiring third voltage information;

[0014] Obtaining first current information according to the third voltage information and the first gain information;

[0015] The driving control state is switched according to the first current information.

[0016] In this solution, adjusting the on / off state of the power supply isolation switch according to the first voltage information is specifically:

[0017] Collecting and recording the first voltage information according to a preset time period;

[0018] Select at least three pieces of the first voltage information and sort them in ascending or descending order to obtain the maximum value of the first voltage information;

[0019] According to the arranged first voltage information, a mean value of the first voltage information is calculated according to a preset mean value algorithm;

[0020] Determining whether the mean value of the first voltage information exceeds a preset first voltage threshold;

[0021] If not, disconnect the power isolation switch;

[0022] If yes, then calculate the difference between the maximum and average values ​​of the first voltage information to obtain first voltage difference information;

[0023] Determining whether the first voltage difference information exceeds a preset first voltage difference threshold;

[0024] If yes, disconnect the power isolating switch;

[0025] If not, the power isolation switch is closed.

[0026] In this solution, switching the drive control state according to the first current information is specifically:

[0027] Determining whether the first current information exceeds a preset first current threshold;

[0028] If yes, switch to the first drive control state and send the first abnormal instruction information;

[0029] If not, determining whether the first current information is lower than a preset second current threshold;

[0030] If yes, switch to the second driving state or the third driving state;

[0031] If not, switch to the fourth driving state;

[0032] The driving control state includes a first driving control state, a second driving control state, a third driving control state and a fourth driving control state.

[0033] In this solution, the switching to the second driving state or the third driving state is specifically:

[0034] Acquire and analyze the first flag information and the second flag information;

[0035] If both the first flag information and the second flag information are in a non-conductive state, switching to a first driving control state;

[0036] If the first flag information indicates a conduction state and the second flag information indicates a non-conduction state, switching to a second driving state;

[0037] If the first flag information indicates a non-conductive state and the second flag information indicates a conductive state, switching to a third driving state;

[0038] If the first flag information and the second flag information are both in a conduction state, obtaining first duration information and second duration information;

[0039] Determining whether the first duration information exceeds the second duration information;

[0040] If yes, switch to the third driving state;

[0041] If not, switch to the second driving state.

[0042] In this solution, the second voltage information is used to obtain the first temperature information, specifically:

[0043] Acquire preset first reference resistance information and second reference resistance information;

[0044] Obtaining first resistance information according to the second voltage information and the first reference resistance information;

[0045] Obtaining second resistance information according to the second voltage information and the second reference resistance information;

[0046] Calculating a difference between the first resistance information and the second resistance information to obtain first resistance difference information;

[0047] Determining whether the first resistance difference information is lower than a preset resistance difference threshold;

[0048] If so, a preset resistance-temperature correspondence table is searched according to the first resistance information or the second resistance information to obtain the first temperature information.

[0049] This plan also includes:

[0050] Determining whether the first resistance information is lower than a preset first resistance threshold;

[0051] If yes, the first flag information is set to a non-conductive state, and second abnormal instruction information is sent according to the first resistance information;

[0052] Determining whether the second resistance information is lower than a preset first resistance threshold;

[0053] If so, the second flag information is set to a non-conductive state, and the second abnormal instruction information is sent according to the second resistance information.

[0054] A second aspect of the present invention provides an intelligent control system for a separate IGBT module, including an intelligent control method program for the separate IGBT module, wherein the intelligent control method program for the separate IGBT module implements the following steps when executed by the processor:

[0055] Acquiring first voltage information;

[0056] Determining whether the first voltage information exceeds a preset first voltage threshold;

[0057] If yes, adjusting the on / off state of the power isolation switch according to the first voltage information;

[0058] When the power isolation switch is in the closed state,

[0059] Acquiring second voltage information;

[0060] obtaining first temperature information according to the second voltage information;

[0061] According to the first temperature information, searching a preset temperature gain correspondence table to determine the first gain information;

[0062] Acquiring third voltage information;

[0063] Obtaining first current information according to the third voltage information and the first gain information;

[0064] The driving control state is switched according to the first current information.

[0065] In this solution, adjusting the on / off state of the power supply isolation switch according to the first voltage information is specifically:

[0066] Collecting and recording the first voltage information according to a preset time period;

[0067] Select at least three pieces of the first voltage information and sort them in ascending or descending order to obtain the maximum value of the first voltage information;

[0068] According to the arranged first voltage information, a mean value of the first voltage information is calculated according to a preset mean value algorithm;

[0069] Determining whether the mean value of the first voltage information exceeds a preset first voltage threshold;

[0070] If not, disconnect the power isolation switch;

[0071] If yes, then calculate the difference between the maximum and average values ​​of the first voltage information to obtain first voltage difference information;

[0072] Determining whether the first voltage difference information exceeds a preset first voltage difference threshold;

[0073] If yes, disconnect the power isolating switch;

[0074] If not, the power isolation switch is closed.

[0075] In this solution, switching the drive control state according to the first current information is specifically:

[0076] Determining whether the first current information exceeds a preset first current threshold;

[0077] If yes, switch to the first drive control state and send the first abnormal instruction information;

[0078] If not, determining whether the first current information is lower than a preset second current threshold;

[0079] If yes, switch to the second driving state or the third driving state;

[0080] If not, switch to the fourth driving state;

[0081] The driving control state includes a first driving control state, a second driving control state, a third driving control state and a fourth driving control state.

[0082] The third aspect of the present invention provides a computer-readable storage medium, which includes a program for an intelligent control method for a separate IGBT module. When the program for the intelligent control method for the separate IGBT module is executed by a processor, the steps of the intelligent control method for the separate IGBT module as described in any one of the above items are implemented.

[0083] The present invention provides an intelligent control method, system and storage medium for a separated IGBT module. First, first voltage information is obtained, and the on-off state of a power isolation switch is adjusted according to the first voltage information; when the power isolation switch is in a closed state, second voltage information is obtained, and first temperature information is obtained according to the second voltage information; then, first gain information is obtained according to the first temperature information; finally, third voltage information is obtained, and first current information is obtained according to the third voltage information and the first gain information, so as to switch the drive control state, thereby realizing the function of intelligently controlling the output state according to the voltage, current and temperature information of the IGBT module, so as to improve the reliability of the module. BRIEF DESCRIPTION OF THE DRAWINGS

[0084] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and should not be regarded as limiting the scope.

[0085] Figure 1 A flow chart showing an intelligent control method for a separated IGBT module of the present invention is shown;

[0086] Figure 2 A flow chart of regulating a power isolation switch provided by an embodiment of the present invention is shown;

[0087] Figure 3 A switching flow chart of a driving control state provided by an embodiment of the present invention is shown;

[0088] Figure 4 A block diagram of an intelligent control system of a separated IGBT module of the present invention is shown. DETAILED DESCRIPTION

[0089] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0090] Unless otherwise defined, all terms (including technical and scientific terms) used in the embodiments of the present invention have the same meanings as commonly understood by those skilled in the art to which the present invention belongs. It should also be understood that terms such as those defined in common dictionaries should be interpreted as having meanings consistent with their meanings in the context of the relevant technology, and should not be interpreted in an idealized or extremely formal sense, unless the embodiments of the present invention are explicitly defined in this way.

[0091] The words "first", "second" and similar words used in the embodiments of the present invention do not indicate any order, quantity or importance, but are only used to distinguish different components. Words such as "one", "an" or "the" and similar words do not indicate a quantity limitation, but indicate the existence of at least one. Similarly, words such as "include" or "comprise" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The steps before or after the method of the embodiment of the present invention are not necessarily carried out in order. On the contrary, various steps can be processed in reverse order or simultaneously. At the same time, other operations can also be added to these processes, or a step or several steps can be removed from these processes.

[0092] In addition, the functional modules in the various embodiments of the present invention may be integrated together to form an independent part, or each module may exist independently, or two or more modules may be integrated to form an independent part.

[0093] Figure 1 A flow chart of an intelligent control method for a separated IGBT module of the present invention is shown.

[0094] like Figure 1 As shown, the present invention discloses an intelligent control method for a separated IGBT module, the method comprising:

[0095] S102, obtaining first voltage information;

[0096] S104, determining whether the first voltage information exceeds a preset first voltage threshold;

[0097] S106: If yes, adjusting the on / off state of the power isolation switch according to the first voltage information;

[0098] S108, when the power isolation switch is in the closed state,

[0099] S110, obtaining second voltage information;

[0100] S112, obtaining first temperature information according to the second voltage information;

[0101] S114, searching a preset temperature gain correspondence table according to the first temperature information to determine first gain information;

[0102] S116, obtaining third voltage information;

[0103] S118, obtaining first current information according to the third voltage information and the first gain information;

[0104] S120: Switch the driving control state according to the first current information.

[0105] It should be noted that the power isolation switch is an analog switch that controls the input power of the separated IGBT module. The first voltage information is the power input voltage of the separated IGBT module; the second voltage information is the voltage across the thermistor of the separated IGBT module; the first temperature information is the heat sink temperature of the separated IGBT module; the first gain information is the gain adjustment coefficient of the output current of the separated IGBT module; the third voltage information is the voltage signal of the shunt of the output current of the separated IGBT module; the first current information is the output current of the separated IGBT module. The drive control state is divided into four states, which are used to control the conduction state of the first type I three-level topology and the second type I three-level topology, including a first drive control state, a second drive control state, a third drive control state and a fourth drive control state; the first drive control state is that the first type I three-level topology and the second type I three-level topology are both in the disconnected state; the second drive control state is that the first type I three-level topology is in the on state, and the second type I three-level topology is in the disconnected state; the third drive control state is that the first type I three-level topology is in the disconnected state, and the second type I three-level topology is in the on state; the fourth drive control state is that the first type I three-level topology and the second type I three-level topology are both in the on state.

[0106] First, obtain the first voltage information, that is, collect the power input voltage. When the first voltage information exceeds the preset first voltage threshold, it means that the power input voltage can meet the working requirements of driving the separated IGBT module; at this time, adjust the power isolation switch according to the stable state of the first voltage information. Then, when the power isolation switch is in a closed state, obtain the second voltage information at both ends of the thermistor, and obtain the first temperature information according to the second voltage information; then search the preset temperature gain corresponding table according to the first temperature information to determine the first gain information. Finally, obtain the voltage signal of the precision shunt on the current sampling circuit, that is, the third voltage information; calculate the first current information according to the third voltage information and the first gain information; the separated IGBT module switches the conduction state of the separated IGBT module according to the size of the first current information.

[0107] Figure 2 A flow chart of regulating a power isolation switch provided by an embodiment of the present invention is shown.

[0108] According to an embodiment of the present invention, Figure 2 As shown, the on-off state of the power isolation switch is adjusted according to the first voltage information, specifically:

[0109] S202, collecting and recording the first voltage information according to a preset time period;

[0110] S204, selecting at least three pieces of the first voltage information and sorting them in ascending or descending order to obtain the maximum value of the first voltage information;

[0111] S206, calculating the mean of the first voltage information according to a preset mean algorithm based on the arranged first voltage information;

[0112] S208, determining whether the average value of the first voltage information exceeds a preset first voltage threshold;

[0113] S210, if not, disconnecting the power isolation switch;

[0114] S212: If yes, calculate the difference between the maximum and average values ​​of the first voltage information to obtain first voltage difference information;

[0115] S214, determining whether the first voltage difference information exceeds a preset first voltage difference threshold;

[0116] S210, if yes, disconnect the power isolation switch;

[0117] S216, if not, close the power isolation switch.

[0118] It should be noted that, first, the first voltage information is collected and recorded according to a preset time period, at least three most recent first voltage information are selected for ascending or descending sorting, and the maximum value, that is, the maximum value and the minimum value in the sorting sequence, is obtained according to the sorting sequence of the first voltage information. Secondly, according to the preset mean algorithm, the mean of the sorting sequence of the first voltage information, that is, the mean of the first voltage information, is obtained; wherein, according to 10% or 20% of the number of first voltage information in the sorting sequence, the first voltage information at the head and tail of the team is removed, and the remaining first voltage information is summed and averaged to obtain the mean of the first voltage information; it is determined whether the mean of the first voltage information exceeds the preset first voltage threshold; if not, it means that the input voltage is insufficient to support the operation of the separated IGBT module, so the power isolation switch needs to be disconnected; if so, it means that the input voltage meets the operation requirements of the separated IGBT module. Then, the difference between the maximum value and the mean of the first voltage information is calculated to obtain the first voltage difference information; in actual applications, the difference between the maximum value and the mean, and the difference between the mean and the minimum in the sorting sequence of the first voltage information are calculated respectively, and the larger of the two differences is compared as the first voltage difference information. Finally, determine whether the first voltage difference information exceeds the preset first voltage difference threshold; if so, it means that the first voltage information is in an unstable state, which is not conducive to the operation of the separate IGBT module, so the power isolation switch is disconnected; if not, it means that the first voltage information is in a stable state, and the separate IGBT module is powered by closing the power isolation switch.

[0119] Figure 3 A switching flow chart of a driving control state provided by an embodiment of the present invention is shown.

[0120] According to an embodiment of the present invention, Figure 3 As shown, the switching of the driving control state according to the first current information is specifically:

[0121] S302, determining whether the first current information exceeds a preset first current threshold;

[0122] S304, if yes, switch to the first drive control state and send the first abnormal instruction information;

[0123] S306, if not, determining whether the first current information is lower than a preset second current threshold;

[0124] S308, if yes, switch to the second driving state or the third driving state;

[0125] S310, if not, switching to the fourth driving state;

[0126] The driving control state includes a first driving control state, a second driving control state, a third driving control state and a fourth driving control state.

[0127] It should be noted that it is determined whether the first current information exceeds the preset first current threshold; if the first current information exceeds the preset first current threshold, it means that the power supply load current demand of the separate IGBT module is too high, or the separate IGBT module circuit is abnormal, resulting in too high current. At this time, in order to avoid damage to the separate IGBT module due to excessive current, the drive control state of the separate IGBT module is switched to the first drive control state, and the first type I three-level topology and the second type I three-level topology are disconnected at the same time to cut off the output; and the first abnormal instruction information is sent to the background according to the first current information to indicate that the separate IGBT module stops working due to excessive current. If the first current information does not exceed the preset first current threshold, it means that the output current is within the allowable range of the separate IGBT module. Therefore, it continues to be judged whether the first current information is lower than the second current threshold; if so, it means that the current required by the load of the separate IGBT module is relatively low, and the power supply demand can be met by a single-channel I-type three-level topology. Therefore, the drive control state of the separate IGBT module is switched to the second drive control state or the third drive control state; if not, it means that the current required by the load of the separate IGBT module is relatively high, and two I-type three-level topologies need to be turned on at the same time to support the load operation. Therefore, the drive control state of the separate IGBT module is switched to the fourth drive control state.

[0128] According to an embodiment of the present invention, the switching to the second driving state or the third driving state is specifically:

[0129] Acquire and analyze the first flag information and the second flag information;

[0130] If both the first flag information and the second flag information are in a non-conductive state, switching to a first driving control state;

[0131] If the first flag information indicates a conduction state and the second flag information indicates a non-conduction state, switching to a second driving state;

[0132] If the first flag information indicates a non-conductive state and the second flag information indicates a conductive state, switching to a third driving state;

[0133] If the first flag information and the second flag information are both in a conduction state, obtaining first duration information and second duration information;

[0134] Determining whether the first duration information exceeds the second duration information;

[0135] If yes, switch to the third driving state;

[0136] If not, switch to the second driving state.

[0137] It should be noted that the first flag information is the working state flag of the first type I three-level topology, including a conductive state and a non-conductive state; the second flag information is the working state flag of the second type I three-level topology, including a conductive state and a non-conductive state; the first duration information is the total conduction duration of the first type I three-level topology; the second duration information is the total conduction duration of the second type I three-level topology. Obtain and analyze the first flag information and the second flag information; when the first flag information and the second flag information are both non-conductive states, it means that both type I three-level topologies are in an abnormal state and cannot perform output conversion. Therefore, it is necessary to switch the drive control state of the separated IGBT module to the first drive control state. When one and only one of the first flag information and the second flag information is in a conductive state, select the corresponding type I three-level topology to be set to conductive for output conversion. If both the first flag information and the second flag information are in a conduction state, the first duration information and the second duration information are obtained to determine whether the first duration information exceeds the second duration information; if so, it means that the usage time of the first type I three-level topology is greater than the usage time of the second type I three-level topology. In order to avoid the single-channel type I three-level topology being in a working fatigue state continuously, the second type I three-level topology is selected to switch to the conduction state, that is, the drive control state of the separate IGBT module is switched to the third drive control state; if not, it means that the usage time of the first type I three-level topology is less than the usage time of the second type I three-level topology, and the drive control state of the separate IGBT module is switched to the second drive control state.

[0138] According to an embodiment of the present invention, the first temperature information is obtained by using the second voltage information, specifically:

[0139] Acquire preset first reference resistance information and second reference resistance information;

[0140] Obtaining first resistance information according to the second voltage information and the first reference resistance information;

[0141] Obtaining second resistance information according to the second voltage information and the second reference resistance information;

[0142] Calculating a difference between the first resistance information and the second resistance information to obtain first resistance difference information;

[0143] Determining whether the first resistance difference information is lower than a preset resistance difference threshold;

[0144] If so, a preset resistance-temperature correspondence table is searched according to the first resistance information or the second resistance information to obtain the first temperature information.

[0145] It should be noted that a temperature sampling circuit is provided in the first type I three-level topology, which includes at least one first reference resistor and a first thermistor; the first reference resistor information is the resistance value of the first reference resistor; the first resistance information is the resistance value of the first thermistor. A temperature sampling circuit is provided in the second type I three-level topology, which includes at least one second reference resistor and a second thermistor; the second reference resistor information is the resistance value of the second reference resistor; the second resistance information is the resistance value of the second thermistor. First, the voltage values ​​of the first thermistor and the second thermistor are collected in sequence, both recorded as the second voltage information, and the first resistance information is calculated according to the voltage divider theorem based on the second voltage information and the first reference resistance information of the first thermistor; the second resistance information is calculated according to the voltage divider theorem based on the second voltage information and the second reference resistance information of the second thermistor. Then the difference between the first resistance information and the second resistance information is calculated to obtain the first resistance difference information. Finally, it is determined whether the first resistance difference information is lower than a preset resistance difference threshold value. If so, it indicates that the temperature values ​​measured by the first thermistor and the second thermistor are similar and are in a normal working state. Therefore, the preset resistance-temperature correspondence table can be searched according to the first resistance information or the second resistance information to obtain the first temperature information. Since the first type I three-level topology and the second type I three-level topology use the same heat sink, if the first thermistor differs greatly from the second thermistor, it indicates that there is an abnormality in the measurement or an abnormality in the separated IGBT module.

[0146] According to an embodiment of the present invention, it also includes:

[0147] Determining whether the first resistance information is lower than a preset first resistance threshold;

[0148] If yes, the first flag information is set to a non-conductive state, and second abnormal instruction information is sent according to the first resistance information;

[0149] Determining whether the second resistance information is lower than a preset first resistance threshold;

[0150] If so, the second flag information is set to a non-conductive state, and the second abnormal instruction information is sent according to the second resistance information.

[0151] It should be noted that, in actual applications, the resistance of the thermistor is inversely correlated with the temperature value, that is, the higher the temperature, the lower the resistance. When the first resistance information is lower than the preset first resistance threshold, it indicates that the first type I three-level topology has a heating anomaly. Therefore, the conduction state of the first type I three-level topology is cut off, and the first flag information is set to a non-conducting state. At the same time, the second abnormal instruction information is generated according to the first resistance information and sent to the background. When the second resistance information is lower than the preset first resistance threshold, it indicates that the second type I three-level topology has a heating anomaly. Therefore, the conduction state of the second type I three-level topology is cut off, and the second flag information is set to a non-conducting state. At the same time, the second abnormal instruction information is generated according to the first resistance information and sent to the background. Through the resistance of the thermistor, the temperature value is reflected to realize the function of over-temperature protection and alarm.

[0152] It is worth mentioning that it also includes:

[0153] Determining whether the first voltage information exceeds a preset second voltage threshold;

[0154] If so, adjust the power isolation switch to an off state, and send third abnormal instruction information according to the first voltage information.

[0155] It should be noted that the present invention is provided with an overvoltage protection function. When the power supply input voltage, that is, the first voltage information, exceeds the preset second voltage threshold, it indicates that the input voltage is in an abnormal state of being too high. At this time, the power isolation switch of the separate IGBT module is adjusted to the disconnected state to prevent the input voltage from being too high and damaging the IGBT device; at the same time, the third abnormal instruction information is sent to the background.

[0156] It is worth mentioning that it also includes:

[0157] Acquiring first communication instruction information;

[0158] Parsing the first communication instruction information to obtain operation code information;

[0159] According to the operation code information, first communication feedback information is generated and sent according to the first temperature information or the first current information.

[0160] It should be noted that the present invention is provided with a remote communication function, and after obtaining the preset first communication instruction information, the operation code is obtained by parsing the first communication instruction information; for example, the operation code 0X55 indicates uploading temperature information, and the operation code 0XAA indicates uploading current information. According to the operation code information, the corresponding first communication feedback information is generated according to the first temperature information or the first current information, and sent to the background.

[0161] Figure 4A block diagram of an intelligent control system of a separated IGBT module of the present invention is shown.

[0162] like Figure 4 As shown, the present invention discloses an intelligent control system 4 of a separated IGBT module, comprising a memory 41 and a processor 42, wherein the memory comprises an intelligent control method program of the separated IGBT module, and when the intelligent control method program of the separated IGBT module is executed by the processor, the following steps are implemented:

[0163] Acquiring first voltage information;

[0164] Determining whether the first voltage information exceeds a preset first voltage threshold;

[0165] If yes, adjusting the on / off state of the power isolation switch according to the first voltage information;

[0166] When the power isolation switch is in the closed state,

[0167] Acquiring second voltage information;

[0168] obtaining first temperature information according to the second voltage information;

[0169] According to the first temperature information, searching a preset temperature gain correspondence table to determine the first gain information;

[0170] Acquiring third voltage information;

[0171] Obtaining first current information according to the third voltage information and the first gain information;

[0172] The driving control state is switched according to the first current information.

[0173] It should be noted that the power isolation switch is an analog switch that controls the input power of the separated IGBT module. The first voltage information is the power input voltage of the separated IGBT module; the second voltage information is the voltage across the thermistor of the separated IGBT module; the first temperature information is the heat sink temperature of the separated IGBT module; the first gain information is the gain adjustment coefficient of the output current of the separated IGBT module; the third voltage information is the voltage signal of the shunt of the output current of the separated IGBT module; the first current information is the output current of the separated IGBT module. The drive control state is divided into four states, which are used to control the conduction state of the first type I three-level topology and the second type I three-level topology, including a first drive control state, a second drive control state, a third drive control state and a fourth drive control state; the first drive control state is that the first type I three-level topology and the second type I three-level topology are both in the disconnected state; the second drive control state is that the first type I three-level topology is in the on state, and the second type I three-level topology is in the disconnected state; the third drive control state is that the first type I three-level topology is in the disconnected state, and the second type I three-level topology is in the on state; the fourth drive control state is that the first type I three-level topology and the second type I three-level topology are both in the on state.

[0174] First, obtain the first voltage information, that is, collect the power input voltage. When the first voltage information exceeds the preset first voltage threshold, it means that the power input voltage can meet the working requirements of driving the separated IGBT module; at this time, adjust the power isolation switch according to the stable state of the first voltage information. Then, when the power isolation switch is in a closed state, obtain the second voltage information at both ends of the thermistor, and obtain the first temperature information according to the second voltage information; then search the preset temperature gain corresponding table according to the first temperature information to determine the first gain information. Finally, obtain the voltage signal of the precision shunt on the current sampling circuit, that is, the third voltage information; calculate the first current information according to the third voltage information and the first gain information; the separated IGBT module switches the conduction state of the separated IGBT module according to the size of the first current information.

[0175] According to an embodiment of the present invention, adjusting the on-off state of the power isolation switch according to the first voltage information is specifically:

[0176] Collecting and recording the first voltage information according to a preset time period;

[0177] Select at least three pieces of the first voltage information and sort them in ascending or descending order to obtain the maximum value of the first voltage information;

[0178] According to the arranged first voltage information, a mean value of the first voltage information is calculated according to a preset mean value algorithm;

[0179] Determining whether the mean value of the first voltage information exceeds a preset first voltage threshold;

[0180] If not, disconnect the power isolation switch;

[0181] If yes, then calculate the difference between the maximum and average values ​​of the first voltage information to obtain first voltage difference information;

[0182] Determining whether the first voltage difference information exceeds a preset first voltage difference threshold;

[0183] If yes, disconnect the power isolating switch;

[0184] If not, the power isolation switch is closed.

[0185] It should be noted that, first, the first voltage information is collected and recorded according to a preset time period, at least three most recent first voltage information are selected for ascending or descending sorting, and the maximum value, that is, the maximum value and the minimum value in the sorting sequence, is obtained according to the sorting sequence of the first voltage information. Secondly, according to the preset mean algorithm, the mean of the sorting sequence of the first voltage information, that is, the mean of the first voltage information, is obtained; wherein, according to 10% or 20% of the number of first voltage information in the sorting sequence, the first voltage information at the head and tail of the team is removed, and the remaining first voltage information is summed and averaged to obtain the mean of the first voltage information; it is determined whether the mean of the first voltage information exceeds the preset first voltage threshold; if not, it means that the input voltage is insufficient to support the operation of the separated IGBT module, so the power isolation switch needs to be disconnected; if so, it means that the input voltage meets the operation requirements of the separated IGBT module. Then, the difference between the maximum value and the mean of the first voltage information is calculated to obtain the first voltage difference information; in actual applications, the difference between the maximum value and the mean, and the difference between the mean and the minimum in the sorting sequence of the first voltage information are calculated respectively, and the larger of the two differences is compared as the first voltage difference information. Finally, determine whether the first voltage difference information exceeds the preset first voltage difference threshold; if so, it means that the first voltage information is in an unstable state, which is not conducive to the operation of the separate IGBT module, so the power isolation switch is disconnected; if not, it means that the first voltage information is in a stable state, and the separate IGBT module is powered by closing the power isolation switch.

[0186] According to an embodiment of the present invention, switching the drive control state according to the first current information is specifically:

[0187] Determining whether the first current information exceeds a preset first current threshold;

[0188] If yes, switch to the first drive control state and send the first abnormal instruction information;

[0189] If not, determining whether the first current information is lower than a preset second current threshold;

[0190] If yes, switch to the second driving state or the third driving state;

[0191] If not, switch to the fourth driving state;

[0192] The driving control state includes a first driving control state, a second driving control state, a third driving control state and a fourth driving control state.

[0193] It should be noted that it is determined whether the first current information exceeds the preset first current threshold; if the first current information exceeds the preset first current threshold, it means that the power supply load current demand of the separate IGBT module is too high, or the separate IGBT module circuit is abnormal, resulting in too high current. At this time, in order to avoid damage to the separate IGBT module due to excessive current, the drive control state of the separate IGBT module is switched to the first drive control state, and the first type I three-level topology and the second type I three-level topology are disconnected at the same time to cut off the output; and the first abnormal instruction information is sent to the background according to the first current information to indicate that the separate IGBT module stops working due to excessive current. If the first current information does not exceed the preset first current threshold, it means that the output current is within the allowable range of the separate IGBT module. Therefore, it continues to be judged whether the first current information is lower than the second current threshold; if so, it means that the current required by the load of the separate IGBT module is relatively low, and the power supply demand can be met by a single-channel I-type three-level topology. Therefore, the drive control state of the separate IGBT module is switched to the second drive control state or the third drive control state; if not, it means that the current required by the load of the separate IGBT module is relatively high, and two I-type three-level topologies need to be turned on at the same time to support the load operation. Therefore, the drive control state of the separate IGBT module is switched to the fourth drive control state.

[0194] According to an embodiment of the present invention, the switching to the second driving state or the third driving state is specifically:

[0195] Acquire and analyze the first flag information and the second flag information;

[0196] If both the first flag information and the second flag information are in a non-conductive state, switching to a first driving control state;

[0197] If the first flag information indicates a conduction state and the second flag information indicates a non-conduction state, switching to a second driving state;

[0198] If the first flag information indicates a non-conductive state and the second flag information indicates a conductive state, switching to a third driving state;

[0199] If the first flag information and the second flag information are both in a conduction state, obtaining first duration information and second duration information;

[0200] Determining whether the first duration information exceeds the second duration information;

[0201] If yes, switch to the third driving state;

[0202] If not, switch to the second driving state.

[0203] It should be noted that the first flag information is the working state flag of the first type I three-level topology, including a conductive state and a non-conductive state; the second flag information is the working state flag of the second type I three-level topology, including a conductive state and a non-conductive state; the first duration information is the total conduction duration of the first type I three-level topology; the second duration information is the total conduction duration of the second type I three-level topology. Obtain and analyze the first flag information and the second flag information; when the first flag information and the second flag information are both non-conductive states, it means that both type I three-level topologies are in an abnormal state and cannot perform output conversion. Therefore, it is necessary to switch the drive control state of the separated IGBT module to the first drive control state. When one and only one of the first flag information and the second flag information is in a conductive state, select the corresponding type I three-level topology to be set to conductive for output conversion. If both the first flag information and the second flag information are in a conduction state, the first duration information and the second duration information are obtained to determine whether the first duration information exceeds the second duration information; if so, it means that the usage time of the first type I three-level topology is greater than the usage time of the second type I three-level topology. In order to avoid the single-channel type I three-level topology being in a working fatigue state continuously, the second type I three-level topology is selected to switch to the conduction state, that is, the drive control state of the separate IGBT module is switched to the third drive control state; if not, it means that the usage time of the first type I three-level topology is less than the usage time of the second type I three-level topology, and the drive control state of the separate IGBT module is switched to the second drive control state.

[0204] According to an embodiment of the present invention, the first temperature information is obtained by using the second voltage information, specifically:

[0205] Acquire preset first reference resistance information and second reference resistance information;

[0206] Obtaining first resistance information according to the second voltage information and the first reference resistance information;

[0207] Obtaining second resistance information according to the second voltage information and the second reference resistance information;

[0208] Calculating a difference between the first resistance information and the second resistance information to obtain first resistance difference information;

[0209] Determining whether the first resistance difference information is lower than a preset resistance difference threshold;

[0210] If so, a preset resistance-temperature correspondence table is searched according to the first resistance information or the second resistance information to obtain the first temperature information.

[0211] It should be noted that a temperature sampling circuit is provided in the first type I three-level topology, which includes at least one first reference resistor and a first thermistor; the first reference resistor information is the resistance value of the first reference resistor; the first resistance information is the resistance value of the first thermistor. A temperature sampling circuit is provided in the second type I three-level topology, which includes at least one second reference resistor and a second thermistor; the second reference resistor information is the resistance value of the second reference resistor; the second resistance information is the resistance value of the second thermistor. First, the voltage values ​​of the first thermistor and the second thermistor are collected in sequence, both recorded as the second voltage information, and the first resistance information is calculated according to the voltage divider theorem based on the second voltage information and the first reference resistance information of the first thermistor; the second resistance information is calculated according to the voltage divider theorem based on the second voltage information and the second reference resistance information of the second thermistor. Then the difference between the first resistance information and the second resistance information is calculated to obtain the first resistance difference information. Finally, it is determined whether the first resistance difference information is lower than a preset resistance difference threshold value. If so, it indicates that the temperature values ​​measured by the first thermistor and the second thermistor are similar and are in a normal working state. Therefore, the preset resistance-temperature correspondence table can be searched according to the first resistance information or the second resistance information to obtain the first temperature information. Since the first type I three-level topology and the second type I three-level topology use the same heat sink, if the first thermistor differs greatly from the second thermistor, it indicates that there is an abnormality in the measurement or an abnormality in the separated IGBT module.

[0212] According to an embodiment of the present invention, it also includes:

[0213] Determining whether the first resistance information is lower than a preset first resistance threshold;

[0214] If yes, the first flag information is set to a non-conductive state, and second abnormal instruction information is sent according to the first resistance information;

[0215] Determining whether the second resistance information is lower than a preset first resistance threshold;

[0216] If so, the second flag information is set to a non-conductive state, and the second abnormal instruction information is sent according to the second resistance information.

[0217] It should be noted that, in actual applications, the resistance of the thermistor is inversely correlated with the temperature value, that is, the higher the temperature, the lower the resistance. When the first resistance information is lower than the preset first resistance threshold, it indicates that the first type I three-level topology has a heating anomaly. Therefore, the conduction state of the first type I three-level topology is cut off, and the first flag information is set to a non-conducting state. At the same time, the second abnormal instruction information is generated according to the first resistance information and sent to the background. When the second resistance information is lower than the preset first resistance threshold, it indicates that the second type I three-level topology has a heating anomaly. Therefore, the conduction state of the second type I three-level topology is cut off, and the second flag information is set to a non-conducting state. At the same time, the second abnormal instruction information is generated according to the first resistance information and sent to the background. Through the resistance of the thermistor, the temperature value is reflected to realize the function of over-temperature protection and alarm.

[0218] It is worth mentioning that it also includes:

[0219] Determining whether the first voltage information exceeds a preset second voltage threshold;

[0220] If so, adjust the power isolation switch to an off state, and send third abnormal instruction information according to the first voltage information.

[0221] It should be noted that the present invention is provided with an overvoltage protection function. When the power supply input voltage, that is, the first voltage information, exceeds the preset second voltage threshold, it indicates that the input voltage is in an abnormal state of being too high. At this time, the power isolation switch of the separate IGBT module is adjusted to the disconnected state to prevent the input voltage from being too high and damaging the IGBT device; at the same time, the third abnormal instruction information is sent to the background.

[0222] It is worth mentioning that it also includes:

[0223] Acquiring first communication instruction information;

[0224] Parsing the first communication instruction information to obtain operation code information;

[0225] According to the operation code information, first communication feedback information is generated and sent according to the first temperature information or the first current information.

[0226] It should be noted that the present invention is provided with a remote communication function, and after obtaining the preset first communication instruction information, the operation code is obtained by parsing the first communication instruction information; for example, the operation code 0X55 indicates uploading temperature information, and the operation code 0XAA indicates uploading current information. According to the operation code information, the corresponding first communication feedback information is generated according to the first temperature information or the first current information, and sent to the background.

[0227] The third aspect of the present invention provides a computer-readable storage medium, which includes a program for an intelligent control method for a separate IGBT module. When the program for the intelligent control method for the separate IGBT module is executed by a processor, the steps of the intelligent control method for the separate IGBT module as described in any one of the above items are implemented.

[0228] The present invention provides an intelligent control method, system and storage medium for a separated IGBT module. First, first voltage information is obtained, and the on-off state of a power isolation switch is adjusted according to the first voltage information; when the power isolation switch is in a closed state, second voltage information is obtained, and first temperature information is obtained according to the second voltage information; then, first gain information is obtained according to the first temperature information; finally, third voltage information is obtained, and first current information is obtained according to the third voltage information and the first gain information, so as to switch the drive control state, thereby realizing the function of intelligently controlling the output state according to the voltage, current and temperature information of the IGBT module, so as to improve the reliability of the module.

[0229] If the functions are implemented in the form of software function modules and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium, including several instructions for enabling a computer device (which can be a personal computer, server, or network device, etc.) to perform all or part of the steps of the methods described in various embodiments of the present invention. The aforementioned storage media include: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk, and other media that can store program codes.

[0230] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. An intelligent control method for a separate IGBT module, characterized in that: The method comprises: Acquiring first voltage information; Determining whether the first voltage information exceeds a preset first voltage threshold; If yes, adjusting the on / off state of the power isolation switch according to the first voltage information; When the power isolation switch is in the closed state, Acquiring second voltage information; obtaining first temperature information according to the second voltage information; According to the first temperature information, searching a preset temperature gain correspondence table to determine the first gain information; Acquiring third voltage information; Obtaining first current information according to the third voltage information and the first gain information; Switching the driving control state according to the first current information; The first voltage information is the power input voltage of the separate IGBT module; the second voltage information is the voltage across the thermistor of the separate IGBT module; the first temperature information is the heat sink temperature of the separate IGBT module; the third voltage information is the voltage signal of the shunt of the output current of the separate IGBT module; the first current information is the output current of the separate IGBT module; The drive control state is divided into four states, which are used to control the conduction state of the first type I three-level topology and the second type I three-level topology, including a first drive control state, a second drive control state, a third drive control state and a fourth drive control state; the first drive control state is that the first type I three-level topology and the second type I three-level topology are both in the disconnected state; the second drive control state is that the first type I three-level topology is in the on state, and the second type I three-level topology is in the disconnected state; the third drive control state is that the first type I three-level topology is in the disconnected state, and the second type I three-level topology is in the on state; the fourth drive control state is that the first type I three-level topology and the second type I three-level topology are both in the on state.

2. The intelligent control method of a separated IGBT module according to claim 1, characterized in that: The step of adjusting the on / off state of the power supply isolation switch according to the first voltage information is specifically as follows: Collecting and recording the first voltage information according to a preset time period; Select at least three pieces of the first voltage information and sort them in ascending or descending order to obtain the maximum value of the first voltage information; According to the arranged first voltage information, a mean value of the first voltage information is calculated according to a preset mean value algorithm; Determining whether the mean value of the first voltage information exceeds a preset first voltage threshold; If not, disconnect the power isolation switch; If yes, then calculate the difference between the maximum and average values ​​of the first voltage information to obtain first voltage difference information; Determining whether the first voltage difference information exceeds a preset first voltage difference threshold; If yes, disconnect the power isolating switch; If not, the power isolation switch is closed.

3. The intelligent control method of a separated IGBT module according to claim 1, characterized in that: The switching of the driving control state according to the first current information is specifically: Determining whether the first current information exceeds a preset first current threshold; If yes, switch to the first drive control state and send the first abnormal instruction information; If not, determining whether the first current information is lower than a preset second current threshold; If yes, switch to the second drive control state or the third drive control state; If not, switch to the fourth driving control state.

4. The intelligent control method of a separated IGBT module according to claim 3, characterized in that: The switching to the second drive control state or the third drive control state is specifically: Acquire and analyze the first flag information and the second flag information; If both the first flag information and the second flag information are in a non-conductive state, switching to a first driving control state; If the first flag information indicates a conduction state and the second flag information indicates a non-conduction state, switching to a second drive control state; If the first flag information indicates a non-conductive state and the second flag information indicates a conductive state, switching to a third driving control state; If the first flag information and the second flag information are both in a conduction state, obtaining first duration information and second duration information; Determining whether the first duration information exceeds the second duration information; If yes, switch to the third drive control state; If not, switch to the second driving control state.

5. The intelligent control method of a separated IGBT module according to claim 1, characterized in that: The second voltage information is used to obtain the first temperature information, specifically: Acquire preset first reference resistance information and second reference resistance information; Obtaining first resistance information according to the second voltage information and the first reference resistance information; Obtaining second resistance information according to the second voltage information and the second reference resistance information; Calculating a difference between the first resistance information and the second resistance information to obtain first resistance difference information; Determining whether the first resistance difference information is lower than a preset resistance difference threshold; If so, a preset resistance-temperature correspondence table is searched according to the first resistance information or the second resistance information to obtain the first temperature information.

6. The intelligent control method of a separated IGBT module according to claim 5, characterized in that: Also includes: Determining whether the first resistance information is lower than a preset first resistance threshold; If yes, the first flag information is set to a non-conductive state, and second abnormal instruction information is sent according to the first resistance information; Determining whether the second resistance information is lower than a preset first resistance threshold; If so, the second flag information is set to a non-conductive state, and the second abnormal instruction information is sent according to the second resistance information.

7. An intelligent control system for a separate IGBT module, characterized in that: The system includes a memory and a processor, wherein the memory includes an intelligent control method program for a separate IGBT module, and when the intelligent control method program for the separate IGBT module is executed by the processor, the following steps are implemented: Acquiring first voltage information; Determining whether the first voltage information exceeds a preset first voltage threshold; If yes, adjusting the on / off state of the power isolation switch according to the first voltage information; When the power isolation switch is in the closed state, Acquiring second voltage information; obtaining first temperature information according to the second voltage information; According to the first temperature information, searching a preset temperature gain correspondence table to determine the first gain information; Acquiring third voltage information; Obtaining first current information according to the third voltage information and the first gain information; Switching the driving control state according to the first current information; The first voltage information is the power input voltage of the separated IGBT module; The second voltage information is the voltage across the thermistor of the separate IGBT module; the first temperature information is the heat sink temperature of the separate IGBT module; the third voltage information is the voltage signal of the shunt of the output current of the separate IGBT module; the first current information is the output current of the separate IGBT module; The drive control state is divided into four states, which are used to control the conduction state of the first type I three-level topology and the second type I three-level topology, including a first drive control state, a second drive control state, a third drive control state and a fourth drive control state; The first driving control state is that the first type I three-level topology and the second type I three-level topology are both in a disconnected state; The second driving control state is that the first type I three-level topology is in the on state, and the second type I three-level topology is in the off state; The third driving control state is that the first type I three-level topology is in the disconnected state, and the second type I three-level topology is in the on state; the fourth driving control state is that the first type I three-level topology and the second type I three-level topology are both in the on state.

8. The intelligent control system of a separate IGBT module according to claim 7, characterized in that: The step of adjusting the on / off state of the power supply isolation switch according to the first voltage information is specifically as follows: Collecting and recording the first voltage information according to a preset time period; Select at least three pieces of the first voltage information and sort them in ascending or descending order to obtain the maximum value of the first voltage information; According to the arranged first voltage information, a mean value of the first voltage information is calculated according to a preset mean value algorithm; Determining whether the mean value of the first voltage information exceeds a preset first voltage threshold; If not, disconnect the power isolation switch; If yes, then calculate the difference between the maximum and average values ​​of the first voltage information to obtain first voltage difference information; Determining whether the first voltage difference information exceeds a preset first voltage difference threshold; If yes, disconnect the power isolating switch; If not, the power isolation switch is closed.

9. The intelligent control system of a separate IGBT module according to claim 7, characterized in that: The switching of the driving control state according to the first current information is specifically: Determining whether the first current information exceeds a preset first current threshold; If yes, switch to the first drive control state and send the first abnormal instruction information; If not, determining whether the first current information is lower than a preset second current threshold; If yes, switch to the second drive control state or the third drive control state; If not, switch to the fourth driving control state.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: The computer-readable storage medium includes a separate IGBT module intelligent control method program, and when the separate IGBT module intelligent control method program is executed by a processor, the steps of the separate IGBT module intelligent control method according to any one of claims 1 to 6 are implemented.

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