An artificial tactile perception system and its application

Abstract

The present invention discloses an artificial tactile perception system and its application, the system includes a thin film transistor and a capacitive tactile sensor, the capacitive tactile sensor is a sandwich structure formed by stacking an upper electrode, a dielectric layer and a lower electrode in sequence, the upper electrode includes a first substrate and a first conductive layer, the lower electrode includes a second substrate and a second conductive layer, the second conductive layer is arranged directly below the dielectric layer, and there is a gap between the second conductive layer and the dielectric layer, the thin film transistor includes a third substrate, a third conductive layer, an insulating layer and an electrode assembly arranged in sequence from bottom to top, the third conductive layer is connected to the second conductive layer through a first wire, and the two electrodes are signal output ends of the artificial tactile perception system. The system can realize the sensing, calculation and storage functions of the signal, and can be applied to realize the multiple memory functions of simulating the human brain, the decoding function of Morse code and the bionic high-pass filtering function, and is expected to play an important role in the next generation of electronic skin and wearable human-machine interface.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic devices and their preparation, and in particular to an artificial tactile perception system and its application. Background Art

[0002] Entering the era of 5G and the Internet of Things (IoT), the amount of data is experiencing explosive growth. However, existing artificial intelligence technologies are still mainly based on the von Neumann architecture with separate computing units and storage units. This architecture leads to inefficient data transmission and limits its computing speed. Therefore, for tasks that require complex pattern recognition or real-time analysis, this system has low energy efficiency. In contrast, brain-inspired neuromorphic computing integrates storage and processing functions to achieve parallel processing of information and show high efficiency. It is worth noting that for hardware-based neuromorphic computing, it is very necessary to build reliable devices that can simulate neuromorphic functions and achieve efficient computing and data processing. At present, two-terminal memristor and three-terminal transistor neuromorphic devices have been proposed for neuromorphic computing and show great application potential. On the other hand, intelligent technologies such as human-computer interaction, bio-robots and intelligent sensing systems are developing rapidly. This trend has driven the demand for flexible intelligent sensors. At the same time, under the action of external signals, the receptors in the sensory organs of the human body will produce physiological reactions and convert these signals into electrical and chemical signals. Subsequently, these neural signals are transmitted to the cerebral cortex to form perceptual activities.

[0003] At present, systems based on single neuromorphic devices and independent electronic skin sensors cannot simultaneously achieve information sensing, computing and storage. Therefore, it is particularly important to develop multifunctional integrated electronic devices with integrated sensing, computing and storage functions. In view of this, the present invention proposes an artificial tactile perception system and its application. Summary of the invention

[0004] The technical problem to be solved by the present invention is to provide an artificial tactile perception system and its application. The artificial tactile perception system senses external pressure signals through capacitive tactile sensors and converts the pressure signals into electrical signals, and uses thin-film transistors as neuromorphic devices and information processing and storage elements to realize the calculation and storage of electrical signals through thin-film transistors, thereby realizing the sensing, calculation and storage functions of signals. The artificial tactile perception system can be used to realize the simulation of multiple memory functions of the human brain, the decoding function of Morse code and the bionic high-pass filtering function, and is expected to play an important role in the next generation of electronic skin and wearable human-machine interfaces.

[0005] The technical solution adopted by the present invention to solve the above technical problems is: an artificial tactile perception system, the artificial tactile perception system includes a thin film transistor and a capacitive tactile sensor connected in series with the thin film transistor, the capacitive tactile sensor is a sandwich structure formed by stacking an upper electrode, a dielectric layer and a lower electrode in sequence, the upper electrode includes a first substrate and a first conductive layer, the first substrate is a PET film, the dielectric layer is a chitosan film, the dielectric layer is deposited on the surface of the first conductive layer, the lower electrode includes a second substrate and a second conductive layer, the material of the second substrate is an elastomer, the surface of the second substrate has a pyramid-shaped microstructure array, the second conductive layer is conductive particles deposited on the surface of the second substrate, the second conductive layer is arranged directly below the dielectric layer, and the edge of the surface of the second conductive layer A padding ring composed of insulating material is arranged at the edge, a gap is provided between the second conductive layer and the dielectric layer, the thin film transistor comprises a third substrate, a third conductive layer, an insulating layer and an electrode assembly arranged in sequence from bottom to top, the insulating layer is a solid electrolyte membrane, the electrode assembly comprises two electrodes and a conductive interface connecting the two electrodes, one of the electrodes is the source of the thin film transistor, the other electrode is the drain of the thin film transistor, the conductive interface is a semiconductor channel, the materials of the two electrodes and the conductive interface are both metal oxides, the material of the third conductive layer is oxide, the third conductive layer is the gate of the thin film transistor, the gate of the thin film transistor is connected to the second conductive layer through a first wire, and the two electrodes are signal output ends of the artificial tactile perception system.

[0006] The working principle of the artificial tactile perception system of the present invention is as follows: after the upper electrode is pressurized, the gap between the dielectric layer and the second conductive layer is reduced, the contact area between the dielectric layer and the second conductive layer is increased, and the capacitance value of the capacitive tactile sensor is increased. The capacitive tactile sensor senses the external pressure signal and converts the pressure signal into an electrical signal, which is transmitted to the gate of the thin film transistor through the first wire, triggering the migration of protons inside the solid electrolyte membrane of the thin film transistor, producing a regulating effect on the semiconductor channel of the thin film transistor, and realizing fine regulation of the output current of the thin film transistor. Tactile perception is realized by detecting the channel current between the source and drain of the thin film transistor.

[0007] Preferably, the elastomer is polydimethylsiloxane (PDMS), the second conductive layer includes a first deposition layer and a second deposition layer, the conductive particles are a combination of any one of aluminum particles, silver particles, and gold particles and indium tin oxide (ITO) particles, the indium tin oxide particles are deposited on the surface of the second substrate by magnetron sputtering to form the first deposition layer, and the aluminum particles, the silver particles, or the gold particles are deposited on the surface of the first deposition layer by thermal evaporation to form the second deposition layer.

[0008] Preferably, the third substrate is a glass substrate, the material of the solid electrolyte membrane is chitosan, the materials of the first conductive layer and the third conductive layer are both indium tin oxide, the materials of the two electrodes and the conductive interface are both indium tin oxide (ITO), indium zinc oxide (IZO), indium tungsten oxide (IWO) or indium gallium zinc oxide (IGZO), and the electrode assembly is a patterned electrode assembly, which is deposited on the surface of the solid electrolyte membrane by a one-step mask method.

[0009] Preferably, the solid electrolyte membrane is prepared by preparing a chitosan solution, dripping the chitosan solution onto the surface of the third conductive layer by a drip coating method, and drying the solution to form the solid electrolyte membrane on the surface of the third conductive layer.

[0010] Preferably, the height of the raising ring is 200 μm to 2 mm.

[0011] Preferably, the thickness of the insulating layer is 1-50 μm, the thickness of the two electrodes is 100-300 nm respectively, and the thickness of the conductive interface is 10-50 nm.

[0012] Preferably, the preparation method of the lower electrode is as follows: prepare a silicon mold with an inverted pyramid-shaped pit array, first prepare a solution containing the elastomer component, then pour the solution into the silicon mold, and demould after drying to obtain the second substrate with a pyramid-shaped microstructure array on the surface, and then deposit the conductive particles on the surface of the second substrate to form the second conductive layer to obtain the lower electrode. The use of a silicon mold with an inverted pyramid-shaped pit array to prepare the second substrate not only optimizes the manufacturing process of the capacitive touch sensor, but also greatly improves the sensitivity and response speed of the capacitive touch sensor.

[0013] Preferably, the dielectric layer is prepared by preparing a chitosan solution, dripping the chitosan solution onto the surface of the first conductive layer by a drip coating method, and drying the solution to form the dielectric layer on the surface of the first conductive layer.

[0014] Preferably, the packaging method of the capacitive touch sensor is as follows: connecting the first wire on one side of the second conductive layer, connecting the second wire on the side of the first conductive layer away from the first wire, providing a circle of the raised circle at the edge of the surface of the second conductive layer, and then placing the dielectric layer downward so that the upper electrode deposited with the dielectric layer is stacked on the raised circle, thereby obtaining the capacitive touch sensor with a sandwich structure, and finally wrapping the capacitive touch sensor with an insulating film.

[0015] The above-mentioned artificial tactile perception system can realize a variety of applications, including simulating the multiple memory functions of the human brain, the decoding function of Morse code and the bionic high-pass filtering function.

[0016] Compared with the prior art, the present invention has the following advantages:

[0017] 1) The present invention realizes the innovative integration of capacitive touch sensors and thin film transistors for the first time, and can directly act on the capacitive touch sensors through external pressure, thereby dynamically regulating the response characteristics of the thin film transistors;

[0018] 2) The artificial tactile perception system of the present invention has the advantage of low cost. It senses external pressure signals through capacitive tactile sensors and converts the pressure signals into electrical signals. It uses thin-film transistors as neuromorphic devices and information processing and storage elements to calculate and store electrical signals, thereby realizing the sensing, calculation and storage functions of signals. It can provide technical support for the formation of multifunctional integrated electronic devices integrating sensing and storage, which not only broadens the application field of capacitive tactile sensors, but also opens up a new research path for pressure-electrical signal conversion technology. The artificial tactile perception system of the present invention is expected to play an important role in the next generation of electronic skin and wearable human-machine interface.

[0019] 3) By applying different amounts of pressure to the capacitive tactile sensor of the artificial tactile perception system of the present invention, the output signal of the thin film transistor can be regulated. In addition, by applying different amounts of pressure to the capacitive tactile sensor of the artificial tactile perception system of the present invention, the multiple memory functions of the human brain can be simulated, thereby realizing the application of the artificial tactile perception system of the present invention in simulating the multiple memory functions of the human brain;

[0020] 4) By applying regular pressure to the capacitive tactile sensor of the artificial tactile perception system of the present invention, the Morse code decoding function and the bionic high-pass filtering function can be realized, thereby realizing the application of the artificial tactile perception system of the present invention in realizing the Morse code decoding function and the bionic high-pass filtering function. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1Schematic diagram of the structure of the artificial tactile perception system in the embodiment;

[0022] Figure 2 and Figure 3 : is a channel current response curve of the artificial tactile perception system under different test conditions in the embodiment;

[0023] Figure 4 A model of the artificial tactile perception system in the embodiment simulating multiple memories of the human brain;

[0024] Figure 5 The test results of the artificial tactile perception system in the embodiment for the Morse code decoding function;

[0025] Figure 6 and Figure 7 This is the test result of the artificial tactile perception system realizing the bionic high-pass filtering function in the embodiment. DETAILED DESCRIPTION

[0026] The present invention is further described in detail below in conjunction with the embodiments of the drawings. Components, materials, and process methods not limited in the present invention all adopt conventional technical means in the art.

[0027] Embodiment: An artificial tactile perception system, such as Figure 1As shown, the capacitive touch sensor 100 includes a thin film transistor 200 and a capacitive touch sensor 100 connected in series with the thin film transistor 200. The capacitive touch sensor 100 is a sandwich structure formed by stacking an upper electrode, a dielectric layer 160 and a lower electrode in sequence. The upper electrode includes a first substrate 180 and a first conductive layer 170. The first substrate 180 is a PET film, and the dielectric layer 160 is a chitosan film. The dielectric layer 160 is deposited on the surface of the first conductive layer 170. The lower electrode includes a second substrate 110 and a second conductive layer. The material of the second substrate 110 is an elastomer. The surface of the second substrate 110 has a pyramid-shaped microstructure array 140. The second conductive layer is conductive particles deposited on the surface of the second substrate 110. The second conductive layer is arranged directly below the dielectric layer 160. The edge of the surface of the second conductive layer is provided with a padding circle 150 composed of an insulating material. There is a gap 190 between the electrical layer and the dielectric layer 160. The thin film transistor 200 includes a third substrate 210, a third conductive layer 220, an insulating layer 230 and an electrode assembly arranged in sequence from bottom to top. The insulating layer 230 is a solid electrolyte membrane. The electrode assembly includes two electrodes 240 and a conductive interface 250 connecting the two electrodes 240. One electrode 240 is the source of the thin film transistor 200, and the other electrode 240 is the drain of the thin film transistor 200. The conductive interface 250 is a semiconductor channel. The materials of the two electrodes 240 and the conductive interface 250 are both metal oxides. The material of the third conductive layer 220 is oxide. The third conductive layer 220 is the gate of the thin film transistor 200. The gate of the thin film transistor 200 is connected to the second conductive layer through a first wire 310. The two electrodes 240 are signal output ends of the artificial tactile perception system.

[0028] In this embodiment, the elastomer is polydimethylsiloxane, the second conductive layer includes a first deposition layer 120 and a second deposition layer 130, the conductive particles are a combination of aluminum particles and indium tin oxide particles, the indium tin oxide particles are deposited on the surface of the second substrate 110 by magnetron sputtering to form the first deposition layer 120, the aluminum particles are deposited on the surface of the first deposition layer 120 by thermal evaporation to form the second deposition layer 130, the third substrate 210 is a glass substrate, the material of the solid electrolyte membrane is chitosan, the materials of the first conductive layer 170 and the third conductive layer 220 are both indium tin oxide, and the two electrodes 2 The materials of 40 and the conductive interface 250 are both indium tin oxide, the electrode assembly is a patterned electrode assembly, and the electrode assembly is deposited on the surface of the solid electrolyte membrane by a one-step mask method, wherein the preparation method of the electrode assembly is: using a DC magnetron sputtering deposition system, in a pure argon atmosphere, indium tin oxide is sputtered on the surface of the solid electrolyte membrane by a one-step mask method, due to the self-diffraction effect, a thin conductive interface 250 is formed between the two electrodes 240, and finally a patterned electrode assembly is deposited, specifically, the sputtering power, the operating voltage, the argon gas flow rate and the sputtering time are set to 80 W, 0.8 Pa, 40 sccm and 15 min, respectively.

[0029] In this embodiment, the preparation method of the lower electrode is as follows: prepare a silicon mold with an inverted pyramid-shaped pit array, the side length of the top square frame of each inverted pyramid-shaped pit of the silicon mold is 15 μm, the depth of each inverted pyramid-shaped pit is 10 μm, and the spacing between the centers of adjacent inverted pyramid-shaped pits is 30 μm; first prepare a solution containing an elastomer component, the solution can be prepared using a commercially available product, and in this embodiment, the DC184 product produced by Dow Chemical Company of the United States is used, which is prepared by fully mixing the PDMS prepolymer (i.e., Part A of the DC184 product) and the curing agent (i.e., Part B of the DC184 product) of the product in a mass ratio of 10:1; then pour the solution into the silicon mold, dry it at 70°C / 2h, and then demold it to obtain a second substrate 110 with a pyramid-shaped microstructure array 140 on the surface, and then deposit conductive particles on the surface of the second substrate 110 to form a second conductive layer, so as to obtain the lower electrode.

[0030] In this embodiment, the preparation method of the second conductive layer is: first, indium tin oxide particles are deposited on the surface of the second substrate 110 by the existing magnetron sputtering technology to form a first deposition layer 120. During the magnetron sputtering deposition process, the sputtering power, the operating voltage, the argon gas flow rate and the sputtering time are set to 80 W, 0.8 Pa, 40 sccm and 10 min, respectively; then, aluminum particles are deposited on the surface of the first deposition layer 120 by the existing thermal evaporation technology to form a second deposition layer 130.

[0031] In this embodiment, the preparation method of the solid electrolyte membrane is as follows: in an ultra-clean room, chitosan powder, deionized water and glacial acetic acid are uniformly mixed in a mass ratio of 1:48:1 to prepare a 2wt% chitosan solution; the chitosan solution is dripped onto the surface of the third conductive layer 220 by a drop coating method, first dried at 35°C for 6 hours, and then dried at 45°C for 6 hours, so that a solid electrolyte membrane is formed on the surface of the third conductive layer 220.

[0032] In this embodiment, the preparation method of the dielectric layer 160 is: the 2wt% chitosan solution prepared above is dripped onto the surface of the first conductive layer 170 by a drip coating method, first dried at 35°C for 6 hours, and then dried at 45°C for 6 hours, so that the dielectric layer 160 is formed on the surface of the first conductive layer 170.

[0033] In this embodiment, the packaging method of the capacitive touch sensor 100 is as follows: the first wire 310 is connected to one side of the second conductive layer, the second wire 320 is connected to the side of the first conductive layer 170 away from the first wire 310, a circle of raised circle 150 is arranged at the edge of the surface of the second conductive layer, and then the dielectric layer 160 is facing downward, so that the upper electrode deposited with the dielectric layer 160 is stacked on the raised circle 150, so as to obtain a capacitive touch sensor 100 with a sandwich structure, and finally the capacitive touch sensor 100 is wrapped with an insulating film.

[0034] In this embodiment, the height of the spacer ring 150 is 200 μm-2 mm, the thickness of the insulating layer 230 is 1-50 μm, the thickness of the two electrodes 240 is 100-300 nm respectively, and the thickness of the conductive interface 250 is 10-50 nm; the first wire 310 and the second wire 320 are both made of copper wire.

[0035] Figure 2 and Figure 3 The channel current response curves of the artificial tactile perception system in this embodiment under different test conditions are shown. First, a bias voltage of 2 V is applied to the second wire (i.e., the bias terminal) of the capacitive touch sensor, and a constant voltage of 2 V is applied to the drain of the thin film transistor to read the channel current; then, a pressure of 3 N is applied to the capacitive touch sensor to obtain the following: Figure 2 The channel current curve shown in , represents the change of current (unit: μA) over time (unit: s). Figure 3 As shown in Figure 1, when we apply a pressure of 10 N on the capacitive touch sensor and set the voltage applied to the second wire and the drain of the thin film transistor to 3 V and 2 V respectively, the number of pressures increases from 1 to 10. Figure 3In the figure, 1#, 2#, 3#, 5#, 7#, and 10# represent the number of pressures, 1, 2, 3, 5, 7, and 10, respectively. It can be observed that the current increases with the increase in the number of pressures, from 1.1 μA to 2.5 μA. This result shows that the output current of the thin film transistor can be effectively controlled by applying different amounts of pressure to the capacitive touch sensor.

[0036] Figure 4 The model of the artificial tactile perception system in this embodiment simulating the multiple memories of the human brain is shown. The model summarizes the human brain memory into three stages: perceptual memory, short-term memory and long-term memory. Figure 4 In the experiment, four 0.3 N pressures were applied to the capacitive touch sensor continuously, and the peak current of the excited thin film transistor was ~0.33 μA. After the pressure application ended, the four current responses returned to the initial resting current position. This behavior is similar to the perceptual memory in the multiple memory model of the human brain. When four 1.3 N pressures were applied to the capacitive touch sensor continuously, the peak current of the thin film transistor increased from ~0.39 μA to ~0.49 μA as the pressure increased. However, the channel current still returned to the initial resting current position of about ~0.29 μA after the pressure application ended. This process simulates the short-term memory behavior. The above results realize the transition from perceptual memory to short-term memory. Then, when four 3 N pressures were applied to the capacitive touch sensor continuously, the peak current of the thin film transistor increased from ~0.53 μA to ~0.82 μA, and the resting current after the pulse ended was about ~0.45 μA. At this time, the current size was larger than the resting current size, showing the characteristics of non-volatility. This process vividly simulates the transition from short-term memory to long-term memory. The above test results show that the artificial tactile perception system of the present invention has the cognitive function of simulating multiple memories of the human brain.

[0037] Figure 5The test results of the artificial tactile perception system in the embodiment for the decoding function of Morse code are shown. Morse code is an internationally recognized communication system that uses dots and dashes to represent various characters. Morse code facilitates efficient and reliable communication, especially when voice transmission is not feasible. Morse code is simple and effective, so it is widely used in various fields such as aviation, amateur radio and emergency signals. To this day, Morse code remains a valuable communication tool, especially in distress situations where clarity is extremely important. Here, we regard a pressure of 0.2 N as a dot and a pressure of 0.8 N as a dash. Accordingly, when the channel current is lower than 0.4 μA and higher than 0.4 μA, it corresponds to a dot signal and a dash signal, respectively. By regularly pressing the capacitive tactile sensor, the input pressure information can be identified by the current peak triggered by the thin film transistor. By regularly pressing the capacitive tactile sensor, the pressure information of "HELLO" can be decoded. This obvious difference can be explained by: on the one hand, the protons stimulated by pressure migrate to the channel / electrolyte interface, resulting in an increase in the current of the thin film transistor; on the other hand, different pressures have different regulatory effects on the capacitive touch sensor and the thin film transistor, resulting in different current sizes. Figure 5 As shown, when different pressures (such as 0.2 N and 0.8 N) are applied to the capacitive touch sensor, the current peak value of the thin film transistor shows obvious differences. The artificial tactile perception system of the present invention is expected to be applied in emerging fields such as information encryption and decryption, information transmission and communication for the deaf.

[0038] Figure 6 and Figure 7 The test results of the artificial tactile perception system in the embodiment to realize the bionic high-pass filtering function are shown. The artificial tactile perception system can be used as a high-pass filter in information transmission. The working principle of the high-pass filter is that when the input frequency is lower than the cutoff frequency, the information cannot be further transmitted after passing through the filter; when the input frequency is higher than the cutoff frequency, the information can be further transmitted. In this test, pressure stimulation of different frequencies is applied to the capacitive tactile sensor, and the stimulation sequence of each frequency group consists of 7 pressures of 30 N. Figure 6 The figure shows the change in current response when the frequency of the input pressure stimulation increases from 0.2 Hz to 0.4 Hz, 0.8 Hz, 1 Hz, and 1.3 Hz. As the stimulation frequency increases, the current amplitude gradually increases. We define the first absolute current magnitude under each group of stimulation frequencies as A 1 , the seventh absolute current is A 7 , and define the current gain (η) as A 7 / A 1When the stimulation frequency was 0.2 Hz, the current gain was 2.45, and when the stimulation frequency was 1.3 Hz, the current gain was 4.3, which indicates that the current gain increases with the increase of stimulation frequency. Figure 7 The relationship between current gain and stimulation frequency is shown. The data points are fitted by Sigmoid function, and the fitting formula is η=a+(ba) / (1+(f / f c ) p ), where a, b and p are constants, f is the stimulation frequency, and f c is the cutoff frequency. The fitting results are a, b, p and f c are ~4.4, ~2.4, ~3 and ~0.63 Hz respectively. This cutoff frequency can be used for processing during image transmission, so that useful signals can be extracted from a large number of pixels. This is illustrated here by using image sharpening as an example. First, the initial image is converted from the spatial domain to the frequency domain by Fourier transform. If the frequency is greater than the cutoff frequency (f c ), the frequency domain signal is allowed to pass. Then, the spatial domain is obtained by inverse two-dimensional Fourier transform to achieve image sharpening. Finally, a more refined image is obtained by linearly stretching the sharpened grayscale image. We used different frequencies to sharpen an initial photo of a flower. When the frequency was lower than the cutoff frequency, that is, when the frequency was 0.2 Hz, the edge information was not clear; when the frequency was 0.63 Hz, the edge of the sharpened image was very obvious; and at a higher frequency of 1.3 Hz, the sharpening effect was still very good. These results show that the artificial tactile perception system of the present invention has great application potential in image processing.

[0039] Compared with electronic devices in the prior art, the artificial tactile perception system of the present invention realizes the sensing, calculation and storage functions of information. By applying pressure to the capacitive tactile sensor, the thin film transistor can be dynamically regulated to simulate the biological synaptic function of multiple memories of the human brain, while realizing the decoding function of Morse code. The artificial tactile perception system of the present invention expands the functions of capacitive tactile sensors and thin film transistors, and provides a development direction for emerging fields such as information encryption and decryption, information transmission, and communication for the deaf. In addition, the artificial tactile perception system of the present invention can also be used as a high-pass filter, showing application potential in image processing. The artificial tactile perception system of the present invention has potential application prospects in the next generation of wearable systems, soft robots and human-computer interaction.

Claims

1. An artificial tactile perception system, characterized in that: The artificial tactile perception system includes a thin film transistor and a capacitive tactile sensor connected in series with the thin film transistor. The capacitive tactile sensor is a sandwich structure formed by stacking an upper electrode, a dielectric layer and a lower electrode in sequence. The upper electrode includes a first substrate and a first conductive layer. The first substrate is a PET film. The dielectric layer is a chitosan film. The dielectric layer is deposited on the surface of the first conductive layer. The lower electrode includes a second substrate and a second conductive layer. The material of the second substrate is an elastomer. The surface of the second substrate has a pyramid-shaped microstructure array. The second conductive layer is conductive particles deposited on the surface of the second substrate. The second conductive layer is arranged directly below the dielectric layer. The edge of the surface of the second conductive layer is provided with a padding circle composed of an insulating material. , there is a gap between the second conductive layer and the dielectric layer, the thin film transistor includes a third substrate, a third conductive layer, an insulating layer and an electrode assembly arranged in sequence from bottom to top, the insulating layer is a solid electrolyte membrane, the electrode assembly includes two electrodes and a conductive interface connecting the two electrodes, one of the electrodes is the source of the thin film transistor, the other electrode is the drain of the thin film transistor, the conductive interface is a semiconductor channel, the materials of the two electrodes and the conductive interface are metal oxides, the material of the third conductive layer is oxide, the third conductive layer is the gate of the thin film transistor, the gate of the thin film transistor is connected to the second conductive layer through a first wire, and the two electrodes are signal output ends of the artificial tactile perception system.

2. The artificial tactile perception system according to claim 1, characterized in that: The elastomer is polydimethylsiloxane, the second conductive layer includes a first deposition layer and a second deposition layer, the conductive particles are a combination of any one of aluminum particles, silver particles, and gold particles and indium tin oxide particles, the indium tin oxide particles are deposited on the surface of the second substrate by magnetron sputtering to form the first deposition layer, and the aluminum particles, the silver particles, or the gold particles are deposited on the surface of the first deposition layer by thermal evaporation to form the second deposition layer.

3. The artificial tactile perception system according to claim 1, characterized in that: The third substrate is a glass substrate, the material of the solid electrolyte membrane is chitosan, the materials of the first conductive layer and the third conductive layer are both indium tin oxide, the materials of the two electrodes and the conductive interface are both indium tin oxide, indium zinc oxide, indium tungsten oxide or indium gallium zinc oxide, the electrode assembly is a patterned electrode assembly, and the electrode assembly is deposited on the surface of the solid electrolyte membrane by a one-step mask method.

4. The artificial tactile perception system according to claim 3, characterized in that: The preparation method of the solid electrolyte membrane is as follows: preparing a chitosan solution, dripping the chitosan solution onto the surface of the third conductive layer by a drip coating method, and drying to form the solid electrolyte membrane on the surface of the third conductive layer.

5. The artificial tactile perception system according to claim 1, characterized in that: The height of the raised ring is 200 μm to 2 mm.

6. The artificial tactile perception system according to claim 1, characterized in that: The thickness of the insulating layer is 1-50 μm, the thickness of the two electrodes is 100-300 nm respectively, and the thickness of the conductive interface is 10-50 nm.

7. The artificial tactile perception system according to claim 1, characterized in that: The preparation method of the lower electrode is as follows: prepare a silicon mold with an inverted pyramid-shaped pit array, first prepare a solution containing the components of the elastomer, then pour the solution into the silicon mold, and demold after drying to obtain the second substrate with a pyramid-shaped microstructure array on the surface, and then deposit the conductive particles on the surface of the second substrate to form the second conductive layer to obtain the lower electrode.

8. The artificial tactile perception system according to claim 1, characterized in that: The preparation method of the dielectric layer is: preparing chitosan solution, dripping the chitosan solution onto the surface of the first conductive layer by dripping method, and forming the dielectric layer on the surface of the first conductive layer after drying.

9. The artificial tactile perception system according to claim 1, characterized in that: The packaging method of the capacitive touch sensor is as follows: the first wire is connected to one side of the second conductive layer, the second wire is connected to the side of the first conductive layer away from the first wire, a circle of the raised circle is arranged at the edge of the surface of the second conductive layer, and then the dielectric layer is facing downward so that the upper electrode deposited with the dielectric layer is stacked on the raised circle, so as to obtain the capacitive touch sensor with a sandwich structure, and finally the capacitive touch sensor is wrapped with an insulating film.

10. Application of an artificial tactile perception system according to any one of claims 1 to 9 in simulating multiple memory functions of the human brain, Morse code decoding function and bionic high-pass filtering function.

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