A method and device for estimating junction temperature of a press-fit IGBT module

Abstract

The present application belongs to the field of electronic technology, and specifically discloses a method and device for estimating the junction temperature of a press-fit IGBT module. In the present application, a first double-sided thermal resistance network model with the temperature of the top shell as a reference temperature and a second double-sided thermal resistance network model with the bottom shell as a reference temperature are established based on the heat conduction path of the press-fit chip in the press-fit IGBT module. Compared with the junction temperature monitoring methods in the related art (such as sensor contact measurement, optical measurement, etc.), which are difficult to estimate the junction temperature of the press-fit IGBT chip, the present application can achieve effective junction temperature estimation of the press-fit IGBT chip in the press-fit IGBT module through the first double-sided thermal resistance network model and / or the second double-sided thermal resistance network model, thereby reducing the measurement difficulty of the junction temperature estimation of the IGBT chip.

Description

Technical Field

[0001] The present application relates to the field of electronic technology, and more specifically, to a method and device for estimating the junction temperature of a press-fit IGBT module. Background Art

[0002] With the development of renewable energy, offshore wind power systems will become an important direction for the development of coastal new energy. As a key component of offshore wind power flexible DC converter valves, the reliability assessment of the press-fit insulated-gate bipolar transistor (IGBT) is of great research significance to offshore grid-connected systems. Studies have shown that temperature failure accounts for the highest proportion of all failure causes of power semiconductors. Due to the compact space of offshore converter stations, the large number of converter valve submodules, and the high bus voltage, the press-fit IGBT chip is tightly wrapped in the shell, making it very difficult to directly measure the internal junction temperature of the press-fit IGBT chip of the press-fit IGBT module with a sensor.

[0003] Compared to traditional soldered IGBTs, press-fit IGBT modules utilize pressure to encapsulate the chip within the module housing. This offers advantages such as high power density, low parasitic inductance, double-sided heat dissipation, a double-sided asymmetric packaging structure, and fault short-circuit resistance. Due to the compact packaging structure of press-fit IGBTs, traditional junction temperature monitoring methods such as sensor contact measurement and optical measurement have difficulty estimating the junction temperature of press-fit IGBT chips.

[0004] Therefore, how to solve the problem in related technologies that it is difficult to estimate the junction temperature of press-bonded IGBT chips is an urgent problem that needs to be solved. Summary of the Invention

[0005] In view of the defects of the existing technology, the purpose of this application is to provide a method and device for estimating the junction temperature of a press-fit IGBT module, aiming to solve the problem in the related art that it is difficult to estimate the junction temperature of a press-fit IGBT chip.

[0006] To achieve the above objectives, in a first aspect, the present application provides a method for estimating junction temperature of a press-fit IGBT module, comprising:

[0007] Determining a first double-sided thermal resistance network model and a second double-sided thermal resistance network model based on a first thermal resistance branch and a second thermal resistance branch in a press-bonded insulated gate bipolar transistor (IGBT) module, wherein the first thermal resistance branch is used to characterize a heat conduction path from a press-bonded IGBT chip to a top housing in the press-bonded IGBT module, and the second thermal resistance branch is used to characterize a heat conduction path from the press-bonded IGBT chip to a bottom housing, the first double-sided thermal resistance network model being a double-sided thermal resistance network model corresponding to a temperature of the top housing as a reference temperature, and the second double-sided thermal resistance model being a double-sided thermal resistance network model corresponding to a temperature of the bottom housing as a reference temperature;

[0008] The junction temperature of the press-bonded IGBT chip is estimated according to the first double-sided thermal resistance network model and / or the second double-sided thermal resistance network model.

[0009] In some embodiments, estimating the junction temperature of the press-bonded IGBT chip according to the first double-sided thermal resistance network model and / or the second double-sided thermal resistance network model includes:

[0010] determining a junction temperature inside the press-bonded IGBT chip according to a heat flow ratio between the first thermal resistance branch and the second thermal resistance branch, a heat flow power of the first thermal resistance branch, and a heat flow power of the second thermal resistance branch;

[0011] The junction temperature of the press-bonded IGBT chip is estimated according to the junction temperature.

[0012] In some embodiments, when the junction temperature of the press-bonded IGBT chip is estimated according to the first double-sided thermal resistance network model, determining the junction temperature inside the press-bonded IGBT chip according to the heat flow ratio of the first thermal resistance branch to the second thermal resistance branch, the heat flow power of the first thermal resistance branch, and the heat flow power of the second thermal resistance branch includes:

[0013] determining a first virtual junction-to-case thermal resistance between the press-bonded IGBT chip and the bottom housing according to the heat flow ratio and a first thermal resistance, wherein the first thermal resistance is the thermal resistance between the press-bonded IGBT chip and the top housing when heat is dissipated through the first thermal resistance branch;

[0014] Alternatively, the first virtual junction-to-case thermal resistance is determined based on a first coefficient and the first thermal resistance, wherein the first coefficient is determined based on the thermal resistance of the top case, the first thermal resistance, and the second thermal resistance, and the second thermal resistance is the thermal resistance between the press-bonded IGBT chip and the bottom case when heat is dissipated through the second thermal resistance branch;

[0015] The junction temperature is determined according to the first virtual junction-to-case thermal resistance, the first thermal resistance, the power loss of the press-bonded IGBT chip, and the temperature of the top surface of the case.

[0016] In some embodiments, when the junction temperature of the press-bonded IGBT chip is estimated according to the second double-sided thermal resistance network model, determining the junction temperature inside the press-bonded IGBT chip according to the heat flow ratio of the first thermal resistance branch to the second thermal resistance branch, the heat flow power of the first thermal resistance branch, and the heat flow power of the second thermal resistance branch includes:

[0017] Determining a second virtual junction-to-case thermal resistance of the press-bonded IGBT chip to the top shell according to the heat flow ratio and the second thermal resistance;

[0018] Alternatively, the second virtual junction-to-case thermal resistance is determined based on a second coefficient and the second thermal resistance, where the second coefficient is the reciprocal of the first coefficient;

[0019] The junction temperature is determined according to the second virtual junction-to-case thermal resistance, the second thermal resistance, the power loss of the press-bonded IGBT chip, and the temperature of the bottom case.

[0020] In some embodiments, the heat flow ratio is obtained by:

[0021] determining the heat flow ratio according to the heat flow power of the first thermal resistance branch and the heat flow power of the second thermal resistance branch;

[0022] Alternatively, the heat flow ratio is obtained according to the temperature of the top shell, the temperature of the bottom shell, and the external environment temperature.

[0023] In some embodiments, a method for obtaining the heat flow power of the first thermal resistance branch and the heat flow power of the second thermal resistance branch includes:

[0024] The heat flow power of the first thermal resistance branch and the heat flow power of the second thermal resistance branch are obtained according to the temperature of the top shell, the temperature of the bottom shell, the external environment temperature, and the power loss of the press-bonded IGBT chip.

[0025] In a second aspect, the present application provides a junction temperature estimation device for a press-fit IGBT module, comprising:

[0026] A model construction module is used to determine a first double-sided thermal resistance network model and a second double-sided thermal resistance network model based on a first thermal resistance branch and a second thermal resistance branch in a press-bonded insulated gate bipolar transistor (IGBT) module, wherein the first thermal resistance branch is used to characterize a heat conduction path from a press-bonded IGBT chip to a top housing in the press-bonded IGBT module, and the second thermal resistance branch is used to characterize a heat conduction path from the press-bonded IGBT chip to a bottom housing. The first double-sided thermal resistance network model is a double-sided thermal resistance network model corresponding to a temperature of the top housing as a reference temperature, and the second double-sided thermal resistance model is a double-sided thermal resistance network model corresponding to a temperature of the bottom housing as a reference temperature.

[0027] A junction temperature estimation module is used to estimate the junction temperature of the press-bonded IGBT chip according to the first double-sided thermal resistance network model and / or the second double-sided thermal resistance network model.

[0028] In a third aspect, the present application provides an electronic device comprising: at least one memory for storing programs; and at least one processor for executing the programs stored in the memory. When the program stored in the memory is executed, the processor is used to execute the method described in the first aspect or any possible implementation of the first aspect.

[0029] In a fourth aspect, the present application provides a computer-readable storage medium, which stores a computer program. When the computer program runs on a processor, the processor executes the method described in the first aspect or any possible implementation of the first aspect.

[0030] In a fifth aspect, the present application provides a computer program product, which, when executed on a processor, enables the processor to execute the method described in the first aspect or any possible implementation of the first aspect.

[0031] It can be understood that the beneficial effects of the second to fifth aspects mentioned above can be found in the relevant description of the first aspect mentioned above, and will not be repeated here.

[0032] In general, the above technical solutions conceived by this application have the following beneficial effects compared with the existing technologies:

[0033] The present application provides a method and device for estimating the junction temperature of a press-bonded IGBT module. By using the heat conduction paths of the press-bonded chip in the press-bonded IGBT module in combination with the top and bottom shells, a first double-sided thermal resistance network model with the temperature of the top shell as a reference temperature and a second double-sided thermal resistance network model with the bottom shell as a reference temperature are established. Compared to junction temperature monitoring methods in related technologies (such as sensor contact measurement and optical measurement), which are difficult to estimate the junction temperature of press-bonded IGBT chips, the present application uses the first double-sided thermal resistance network model and / or the second double-sided thermal resistance network model to effectively estimate the junction temperature of the press-bonded IGBT chip in the press-bonded IGBT module, thereby reducing the difficulty of measuring the junction temperature of the IGBT chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 1 is a flow chart of a method for estimating junction temperature of a press-fit IGBT module provided in an embodiment of the present application;

[0035] Figure 2 This is a schematic structural diagram of a press-fit IGBT module provided in an embodiment of the present application;

[0036] Figure 3 Schematic diagram of the structure of the double-sided thermal resistance network model provided in the embodiment of the present application;

[0037] Figure 4Schematic diagram of the structure of the first double-sided thermal resistance network model provided in an embodiment of the present application;

[0038] Figure 5 is a structural diagram of a second double-sided thermal resistance network model provided in an embodiment of the present application;

[0039] Figure 6 This is a schematic diagram of the locations of the temperature measurement points provided in the embodiment of the present application;

[0040] Figure 7 This is one of the heat flow path simulation schematics provided in the embodiments of the present application;

[0041] Figure 8 This is the second heat flow path simulation schematic diagram provided in the embodiment of the present application;

[0042] Figure 9 Schematic diagram of a slotted molybdenum sheet and a press-fit IGBT experimental module provided in an embodiment of the present application;

[0043] Figure 10 This is one of the schematic diagrams of junction temperature estimation experimental results provided in the embodiments of the present application;

[0044] Figure 11 Schematic diagram 2 of the junction temperature estimation experimental results provided in the embodiment of the present application;

[0045] Figure 12 1 is a schematic structural diagram of a junction temperature estimation device for a press-fit IGBT module provided in an embodiment of the present application;

[0046] Figure 13 It is a structural diagram of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0047] In order to make the purpose, technical solutions and advantages of this application more clear, the following further describes this application in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.

[0048] The term "and / or" as used herein describes an association between related objects, indicating that three possible relationships exist. For example, "A and / or B" can represent: A exists alone, A and B exist simultaneously, or B exists alone. The symbol " / " as used herein indicates that the related objects are in an "or" relationship, for example, A / B means either A or B.

[0049] The terms "first" and "second" in this specification and claims are used to distinguish different objects rather than to describe a specific order of objects. For example, "first response message" and "second response message" are used to distinguish different response messages rather than to describe a specific order of response messages.

[0050] In the embodiments of this application, words such as "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary" or "for example" in the embodiments of this application should not be interpreted as being preferred or advantageous over other embodiments or designs. Rather, the use of words such as "exemplary" or "for example" is intended to present the relevant concepts in a concrete manner.

[0051] In the description of the embodiments of the present application, unless otherwise specified, "multiple" means two or more, for example, multiple processing units means two or more processing units, etc.; multiple elements means two or more elements, etc.

[0052] In the thermal resistance network modeling of power modules, existing research focuses primarily on single-sided heat dissipation modules. Compared to power modules with single-sided heat flow paths, the physical meaning of the double-sided thermal resistance network model and double-sided heat flow paths for press-bonded IGBT modules is less clear. The definitions and methods for obtaining the parameter expressions of traditional double-sided thermal resistance network models are unclear, and the accuracy and applicability of the models in junction temperature estimation have not been thoroughly studied, making it difficult to achieve the required accuracy for junction temperature estimation of press-bonded IGBT chips. Therefore, focusing on the asymmetric double-sided heat flow in press-bonded IGBT modules, analyzing the physical meaning of double-sided heat flow transfer, and establishing a double-sided thermal resistance network model suitable for junction temperature estimation of press-bonded IGBT modules are of great research significance and have promising application prospects.

[0053] The embodiments of the present application are described below in conjunction with the drawings in the embodiments of the present application.

[0054] See also Figure 1 , an embodiment of the present application provides a method for estimating the junction temperature of a press-fit IGBT module, including steps 110 and 120.

[0055] Step 110: Determine a first double-sided thermal resistance network model and a second double-sided thermal resistance network model based on a first thermal resistance branch and a second thermal resistance branch in a press-bonded insulated gate bipolar transistor (IGBT) module, wherein the first thermal resistance branch is used to characterize a heat conduction path from a press-bonded IGBT chip to a top housing in the press-bonded IGBT module, and the second thermal resistance branch is used to characterize a heat conduction path from the press-bonded IGBT chip to a bottom housing. The first double-sided thermal resistance network model is a double-sided thermal resistance network model corresponding to a temperature of the top housing as a reference temperature, and the second double-sided thermal resistance model is a double-sided thermal resistance network model corresponding to a temperature of the bottom housing as a reference temperature.

[0056] Step 120 : Estimate the junction temperature of the press-bonded IGBT chip according to the first double-sided thermal resistance network model and / or the second double-sided thermal resistance network model.

[0057] See further Figure 2 The press-fit IGBT module consists of a metal fixture (not shown in the figure), a press-fit IGBT housing (including a top housing and a bottom housing, not shown in the figure), a plastic frame (not shown in the figure), a silver gasket, an upper molybdenum sheet, a lower molybdenum sheet, an IGBT chip, and a water cooling plate. The metal fixture is used to apply pressure and fix the IGBT housing; the plastic frame is used to fix the internal IGBT chip, and the silver gasket and molybdenum sheet are used to buffer external pressure and internal thermal stress. According to the double-sided asymmetric structure of the press-fit IGBT module, its corresponding double-sided thermal resistance network model is established, as shown in Figure 2. Figure 3 As shown in FIG, the double-sided thermal resistance network model only represents the relationship between the physical structure and thermal resistance of each material layer of the press-bonded IGBT.

[0058] Figure 3 In, P loss Represents the power loss of the press-fit IGBT chip; T j Represents the junction temperature inside the press-fit IGBT chip, which can be used to estimate the junction temperature of the press-fit IGBT chip; P loss-top represents the heat flow power of the first thermal resistance branch, that is, the heat flow power of the heat conduction path from the press-fit IGBT chip to the top surface of the housing in the press-fit IGBT module; P loss-bot represents the heat flow power of the second thermal resistance branch, that is, the heat flow power of the heat conduction path from the press-fit IGBT chip to the bottom shell in the press-fit IGBT module; R chip-top R represents the thermal resistance from the hot spot of the pressed IGBT chip to the top surface of the shell; mo-top Represents the thermal resistance of the upper molybdenum sheet; R case-top represent Figure 2 Thermal resistance of the collector case in the upper middle part; R jc-top =R chip-top +R mo-top +R case-top ; R heatsink-top represent Figure 2 Thermal resistance of the water cooling plate in the upper middle part; R water-top represent Figure 2 From the water cooling plate in the upper middle to the water inlet T w-top-in Thermal resistance; R chip-bot R represents the thermal resistance from the hot spot of the pressed IGBT chip to the bottom shell; mo-bot Represents the thermal resistance of the lower molybdenum sheet; R case-bot represent Figure 2 Thermal resistance of the collector case in the middle and lower part; R shim Represents the thermal resistance of the silver gasket; R jc-bot =R chip-bot +R mo-bot +R shim +R case-bot ; R heatsink-bot represent Figure 2 Thermal resistance of the water cooling plate in the middle and lower part; Rwater-bot represent Figure 2 From the middle and lower water cooling plate to the water inlet T w-bot-in Thermal resistance; T c-top Represents the temperature of the top shell; T c-bot Represents the temperature of the bottom shell; T env Represents the external ambient temperature. In the embodiment of the present application, the temperature of the water inlet of the water cooling plate is selected as the external ambient temperature.

[0059] According to the double-sided thermal resistance network model, a first double-sided thermal resistance network model with the top shell as the reference temperature and a second double-sided thermal resistance network model with the bottom shell as the reference temperature can be established respectively.

[0060] In the embodiment of the present application, one of the first double-sided thermal resistance network model and the second double-sided thermal resistance network model established above can be selected to estimate the internal junction temperature of the press-bonded IGBT chip. Alternatively, the first double-sided thermal resistance network model and the second double-sided thermal resistance network model can be combined to estimate the internal junction temperature of the press-bonded IGBT chip to obtain a final estimate of the junction temperature of the press-bonded IGBT chip.

[0061] For example, it is assumed that the junction temperature inside the press-bonded IGBT chip obtained by the first double-sided thermal resistance network model is T j1 The junction temperature inside the press-fit IGBT chip obtained by the second double-sided thermal resistance network model is T j2 , then the junction temperature inside the press-fit IGBT chip obtained by combining the two is T j =(T j1 +T j2 ) / 2.

[0062] The present invention provides a method for estimating the junction temperature of a press-bonded IGBT module. This method establishes a first double-sided thermal resistance network model with the temperature of the top shell as a reference temperature, and a second double-sided thermal resistance network model with the bottom shell as a reference temperature, based on the heat conduction path of the press-bonded chip in the press-bonded IGBT module. Compared to junction temperature monitoring methods in related technologies (such as sensor contact measurement and optical measurement), which are difficult to estimate the junction temperature of press-bonded IGBT chips, the present invention uses the first double-sided thermal resistance network model and / or the second double-sided thermal resistance network model to effectively estimate the junction temperature of the press-bonded IGBT chip in the press-bonded IGBT module, thereby reducing the difficulty of measuring the junction temperature of the IGBT chip.

[0063] Furthermore, in some embodiments, in step 120, estimating the junction temperature of the press-bonded IGBT chip according to the first double-sided thermal resistance network model and / or the second double-sided thermal resistance network model may include:

[0064] determining a junction temperature inside the press-bonded IGBT chip according to a heat flow ratio between the first thermal resistance branch and the second thermal resistance branch, a heat flow power of the first thermal resistance branch, and a heat flow power of the second thermal resistance branch;

[0065] The junction temperature of the press-bonded IGBT module is estimated according to the junction temperature.

[0066] In a specific implementation, the heat flow ratio K of the first thermal resistance branch and the second thermal resistance branch, the heat flow power P of the first thermal resistance branch in the first double-sided thermal resistance network model established above can be used. loss-top and the heat flow power P of the second thermal resistance branch loss-bot , get the junction temperature inside the pressed IGBT chip, and get the junction temperature T inside the pressed IGBT chip j1 As the junction temperature T j .

[0067] The heat flux ratio K of the first thermal resistance branch and the second thermal resistance branch, the heat flux power P of the first thermal resistance branch in the second double-sided thermal resistance network model established above can also be used. loss-top and the heat flow power P of the second thermal resistance branch loss-bot , get the junction temperature T inside the press-fit IGBT chip j2 , and the junction temperature T inside the press-fit IGBT chip will be obtained j2 As the junction temperature T j .

[0068] We can also combine the above-mentioned T j1 and T j2 , get the junction temperature T inside the press-fit IGBT chip j .

[0069] The junction temperature of the IGBT chip is estimated based on the obtained junction temperature inside the press-bonded IGBT chip.

[0070] Furthermore, in some embodiments, when the junction temperature of the press-bonded IGBT chip is estimated based on the first double-sided thermal resistance network model, in the above step, determining the junction temperature inside the press-bonded IGBT chip based on the heat flow ratio of the first thermal resistance branch to the second thermal resistance branch, the heat flow power of the first thermal resistance branch, and the heat flow power of the second thermal resistance branch may include:

[0071] determining a first virtual junction-to-case thermal resistance between the press-bonded IGBT chip and the bottom housing according to the heat flow ratio and a first thermal resistance, wherein the first thermal resistance is the thermal resistance between the press-bonded IGBT chip and the top housing when heat is dissipated through the first thermal resistance branch;

[0072] Alternatively, the first virtual junction-to-case thermal resistance is determined based on a first coefficient and the first thermal resistance, wherein the first coefficient is determined based on the thermal resistance of the top case, the first thermal resistance, and the second thermal resistance, and the second thermal resistance is the thermal resistance between the press-bonded IGBT chip and the bottom case when heat is dissipated through the second thermal resistance branch;

[0073] The junction temperature is determined according to the first virtual junction-to-case thermal resistance, the first thermal resistance, the power loss of the press-bonded IGBT chip, and the temperature of the top surface of the case.

[0074] In a specific implementation, since the thermal circuit and the circuit have the same microscopic manifestation, if the first thermal resistance branch and the second thermal resistance branch are connected in parallel to obtain a double-sided thermal resistance network model that can be used for junction temperature estimation, when establishing the above-mentioned first double-sided thermal resistance network model and the second double-sided thermal resistance network model, it is necessary to find the same isothermal point of the first thermal resistance branch and the second thermal resistance branch.

[0075] In the embodiment of the present application, the temperature of the top shell T c-top and the bottom shell temperature T c-bot The corresponding first double-sided thermal resistance network model and second double-sided thermal resistance network model are established for the reference temperature, and the virtual junction-to-case thermal resistance R is proposed when the two heat conduction paths of the press-fit IGBT are connected in parallel. t ' hjc The calculation formula and T j Among them, two double-sided thermal resistance network models for estimating the junction temperature of press-fit IGBT chips are established as follows: Figure 4 and Figure 5 As shown. Among them, R thc-env-top =R heatsink-top +R water-top , R thc-env-bot =R heatsink-bot +R water-bot .

[0076] According to the first double-sided thermal resistance network model, when estimating the junction temperature of the press-bonded IGBT chip, T c-top As the reference temperature, the first virtual junction-to-case thermal resistance between the pressed IGBT chip and the bottom shell and the junction temperature inside the pressed IGBT chip can be obtained, as shown in the following formula.

[0077] R' thjc-bot =C1·R thjc-top =K·R thjc-top

[0078]

[0079] Where C1 represents the first coefficient; R' thjc-bot R represents the first virtual junction-to-case thermal resistance between the IGBT chip and the bottom shell;c-env-bot Represents the thermal resistance of the bottom shell; R c-env-top Represents the thermal resistance of the top shell; R thjc-bot R represents the second thermal resistance, that is, the thermal resistance of the IGBT chip pressed against the bottom shell when the second thermal resistance branch is used for heat dissipation. In this case, the first thermal resistance branch adopts thermal insulation treatment. thjc-top represents the first thermal resistance, that is, the thermal resistance between the IGBT chip and the top shell when the first thermal resistance branch is used for heat dissipation. At this time, the second thermal resistance branch adopts thermal insulation treatment; K represents the heat flow ratio between the first thermal resistance branch and the second thermal resistance branch; where R' thjc-bot <R thjc-bot .

[0080]

[0081] Among them, T j Represents the junction temperature inside the press-fit IGBT chip.

[0082] Furthermore, in some embodiments, when the junction temperature of the press-bonded IGBT chip is estimated based on the second double-sided thermal resistance network model, in the above step, determining the junction temperature inside the press-bonded IGBT chip based on the heat flow ratio of the first thermal resistance branch to the second thermal resistance branch, the heat flow power of the first thermal resistance branch, and the heat flow power of the second thermal resistance branch may include:

[0083] Determining a second virtual junction-to-case thermal resistance of the press-bonded IGBT chip to the top shell according to the heat flow ratio and the second thermal resistance;

[0084] Alternatively, the second virtual junction-to-case thermal resistance is determined based on a second coefficient and the second thermal resistance, where the second coefficient is the reciprocal of the first coefficient;

[0085] The junction temperature is determined according to the second virtual junction-to-case thermal resistance, the second thermal resistance, the power loss of the press-bonded IGBT chip, and the temperature of the bottom case.

[0086] In the specific implementation, according to the second double-sided thermal resistance network model, when estimating the junction temperature of the press-fit IGBT chip, T c-bot As the reference temperature, the second virtual junction-to-case thermal resistance between the press-bonded IGBT chip and the bottom case and the junction temperature inside the press-bonded IGBT chip can be obtained, as shown in the following formula.

[0087] R' thjc-top =C2·R thjc-bot =K·R thjc-bot

[0088]

[0089]

[0090] Among them, C2 represents the second coefficient; R thjc-top <R' thjc-top <R thjc-top +R c-env-top .

[0091] It should be noted that due to the asymmetric heat flow path and power loss of the press-fit IGBT module, there is a difference between the temperature of the top shell and the bottom shell of the press-fit IGBT module. The embodiment of the present application establishes a double-sided thermal resistance network model with the top shell or the bottom shell as the reference temperature, namely the first double-sided thermal resistance network model and the second double-sided thermal resistance network module. Both models can effectively estimate the junction temperature inside the press-fit IGBT chip. thjc-top <Second thermal resistance R thjc-bot Therefore, the error of the first double-sided thermal resistance network model established with the top shell as the reference temperature point in estimating the junction temperature inside the press-bonded IGBT chip is relatively small.

[0092] Furthermore, in some embodiments, in the above steps, the heat flow ratio may be obtained by:

[0093] determining the heat flow ratio according to the heat flow power of the first thermal resistance branch and the heat flow power of the second thermal resistance branch;

[0094] Alternatively, the heat flow ratio is obtained according to the temperature of the top shell, the temperature of the bottom shell, and the external environment temperature.

[0095] In the specific implementation, based on the asymmetric double-sided heat flow path of the press-fit IGBT module (i.e., the heat conduction path from the press-fit IGBT chip to the top shell and the heat conduction path from the press-fit IGBT chip to the bottom shell in the press-fit IGBT module), a double-sided thermal resistance network model that can be used to estimate the junction temperature of the press-fit IGBT is obtained by calculating the double-sided heat dissipation ratio. It can be seen from the heat conduction equation that since the material structure from the shells on both sides of the press-fit IGBT module (i.e., the top shell and the bottom shell) to the water cooling plate is exactly the same, the heat flow ratio K of the first thermal resistance branch and the second thermal resistance branch is the same as the junction temperature T inside the press-fit IGBT chip. j and the external ambient temperature T env is proportional to the temperature difference.

[0096]

[0097] Among them, T env Select the temperature of the water inlet of the water cooling plate, T c-top and T c-bot are the temperature of the top shell and the temperature of the bottom shell respectively. Each temperature is measured by a thermocouple. Figure 6shown.

[0098] Furthermore, in some embodiments, in the above steps, the heat flow power of the first thermal resistance branch and the heat flow power of the second thermal resistance branch are obtained by:

[0099] The heat flow power of the first thermal resistance branch and the heat flow power of the second thermal resistance branch are obtained according to the temperature of the top shell, the temperature of the bottom shell, the external environment temperature, and the power loss of the press-bonded IGBT chip.

[0100] In a specific implementation, the heat flow power P of the first thermal resistance branch loss-top and the heat flow power P of the second thermal resistance branch loss-bot The calculation formula is as follows.

[0101]

[0102] In order to verify the influencing factors and accuracy of each parameter of the model, finite element simulation was used to analyze and prove that R thjc It is only related to the size and thermal conductivity of each material layer between the IGBT chip and the top and bottom shells. thjc It is obtained by the thermocouple method and is also affected by the number of press-fit IGBT chip packages, because the heat flow in a multi-chip package will pass through the vertical path of other chips, resulting in a thermal coupling effect such as Figure 7 and Figure 8 The heat flow ratio K is determined by the total thermal resistance R of both sides of the press-fit IGBT chip relative to the environment. th-all Without changing the internal structure of the press-fit IGBT module, K is only determined by the external heat dissipation conditions (such as the convection coefficient of the water cooling plate). loss Under different water cooling plate convection coefficient conditions, R thjc The simulation verification results of and K are shown in Table 1.

[0103] Table 1

[0104]

[0105] Use IXYS 4500V / 50A IGBT chip to press IGBT module for single chip packaging, and groove the upper and lower molybdenum sheets and water cooling plate of the press-fit IGBT module. Figure 9 As shown in the figure, the double-sided thermal resistance network model is used to verify the junction temperature estimation experiment of the press-fit IGBT chip. Under the condition of double-sided forced water cooling, the junction temperature of the press-fit IGBT chip is estimated by T c-top The double-sided thermal resistance network model with reference temperature has a maximum relative error of 3.42% in junction temperature estimation. c-botThe maximum relative error of the junction temperature estimation of the double-sided thermal resistance network model with reference temperature is 4.97%. Figure 10 and Figure 11 shown.

[0106] Due to the compact packaging structure of the press-fit IGBT module, it is difficult to directly measure the junction temperature inside the press-fit IGBT chip. The embodiment of the present application only measures external conditions, such as the temperature of the water cooling plate, the temperature of the top shell, and the temperature of the bottom shell, and adopts a double-sided thermal resistance network model to effectively estimate the junction temperature inside the press-fit IGBT chip.

[0107] The method for estimating the junction temperature of a press-bonded IGBT module provided in an embodiment of the present application accurately defines the parameters of a double-sided thermal resistance network model and discusses the influencing factors of each parameter, thereby ensuring the applicability of the junction temperature estimation of the double-sided thermal resistance network model while achieving accurate estimation of the press-bonded IGBT chip and improving the accuracy of the estimation of the junction temperature of the press-bonded IGBT.

[0108] The following describes a junction temperature estimation device for a press-bonded IGBT module provided by the present invention. The junction temperature estimation device for a press-bonded IGBT module described below and the junction temperature estimation method for a press-bonded IGBT module described above can refer to each other.

[0109] See also Figure 12 The junction temperature estimation device for a press-bonded IGBT module provided in an embodiment of the present application may include: a model building module 1210 and a junction temperature estimation module 1220 .

[0110] A model construction module 1210 is configured to determine a first double-sided thermal resistance network model and a second double-sided thermal resistance network model based on a first thermal resistance branch and a second thermal resistance branch in a press-bonded insulated gate bipolar transistor (IGBT) module, wherein the first thermal resistance branch is configured to characterize a heat conduction path from a press-bonded IGBT chip to a top housing in the press-bonded IGBT module, and the second thermal resistance branch is configured to characterize a heat conduction path from the press-bonded IGBT chip to a bottom housing. The first double-sided thermal resistance network model is a double-sided thermal resistance network model corresponding to a temperature of the top housing as a reference temperature, and the second double-sided thermal resistance model is a double-sided thermal resistance network model corresponding to a temperature of the bottom housing as a reference temperature.

[0111] The junction temperature estimation module 1220 is configured to estimate the junction temperature of the press-bonded IGBT chip according to the first double-sided thermal resistance network model and / or the second double-sided thermal resistance network model.

[0112] The present invention provides a device for estimating the junction temperature of a press-bonded IGBT module. This device establishes a first double-sided thermal resistance network model with the temperature of the top shell as a reference temperature, and a second double-sided thermal resistance network model with the bottom shell as a reference temperature, based on the heat conduction path of the press-bonded chip in the press-bonded IGBT module. Compared to junction temperature monitoring methods in related technologies (such as sensor contact measurement and optical measurement), which are difficult to estimate the junction temperature of a press-bonded IGBT chip, the present invention uses the first double-sided thermal resistance network model and / or the second double-sided thermal resistance network model to effectively estimate the junction temperature of the press-bonded IGBT chip in the press-bonded IGBT module, thereby reducing the difficulty of measuring the junction temperature of the IGBT chip.

[0113] It is understandable that the detailed functional implementation of each of the above units / modules can be found in the introduction of the aforementioned method embodiment, and will not be repeated here.

[0114] It should be understood that the above-mentioned device is used to execute the method in the above-mentioned embodiment. The implementation principle and technical effect of the corresponding program module in the device are similar to those described in the above-mentioned method. The working process of the device can refer to the corresponding process in the above-mentioned method and will not be repeated here.

[0115] Based on the method in the above embodiment, the embodiment of the present application provides an electronic device, such as Figure 13 As shown, the electronic device may include: a processor (Processor) 1310, a communication interface (Communications Interface) 1320, a memory (Memory) 1330 and a communication bus 1340, wherein the processor 1310, the communication interface 1320, and the memory 1330 communicate with each other via the communication bus 1340. The processor 1310 can call the logic instructions in the memory 1330 to execute the method in the above embodiment.

[0116] In addition, the logic instructions in the above-mentioned memory 1330 can be implemented in the form of a software functional unit and can be stored in a computer-readable storage medium when sold or used as an independent product. Based on this understanding, the technical solution of the present application, or the part that contributes to the prior art, or the part of the technical solution can be embodied in the form of a software product, which is stored in a storage medium and includes a number of instructions for enabling a computer device (which can be a personal computer, server, or network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present application.

[0117] Based on the method in the above embodiment, an embodiment of the present application provides a computer-readable storage medium, which stores a computer program. When the computer program runs on a processor, the processor executes the method in the above embodiment.

[0118] Based on the method in the above embodiment, an embodiment of the present application provides a computer program product. When the computer program product runs on a processor, the processor executes the method in the above embodiment.

[0119] It is understood that the processor in the embodiments of the present application may be a central processing unit (CPU), or may be other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field programmable gate arrays (FPGA), or other programmable logic devices, transistor logic devices, hardware components, or any combination thereof. The general-purpose processor may be a microprocessor or any conventional processor.

[0120] The method steps in the embodiments of the present application can be implemented by hardware or by a processor executing software instructions. The software instructions can be composed of corresponding software modules, and the software modules can be stored in random access memory (RAM), flash memory, read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), registers, hard disks, mobile hard disks, CD-ROMs or any other form of storage medium well known in the art. An exemplary storage medium is coupled to the processor so that the processor can read information from the storage medium and write information to the storage medium. Of course, the storage medium can also be a component of the processor. The processor and the storage medium can be located in an ASIC.

[0121] In the above embodiments, it can be implemented in whole or in part by software, hardware, firmware or any combination thereof. When implemented using software, it can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, the process or function described in the embodiment of the present application is generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in a computer-readable storage medium or transmitted via the computer-readable storage medium. The computer instructions can be transmitted from one website, computer, server or data center to another website, computer, server or data center via a wired (e.g., coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) method. The computer-readable storage medium can be any available medium that a computer can access or a data storage device such as a server or data center that includes one or more available media integrations. The available medium can be a magnetic medium (e.g., a floppy disk, a hard disk, a tape), an optical medium (e.g., a DVD), or a semiconductor medium (e.g., a solid-state drive (SSD)).

[0122] It will be understood that the various numerical numbers involved in the embodiments of the present application are merely distinctions for the convenience of description and are not intended to limit the scope of the embodiments of the present application.

[0123] It is easy for those skilled in the art to understand that the above is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the scope of protection of the present application.

Claims

1. A method for estimating junction temperature of a press-fit IGBT module, characterized in that: include: Determining a first double-sided thermal resistance network model and a second double-sided thermal resistance network model based on a first thermal resistance branch and a second thermal resistance branch in a press-bonded insulated gate bipolar transistor (IGBT) module, wherein the first thermal resistance branch is used to characterize a heat conduction path from a press-bonded IGBT chip to a top housing in the press-bonded IGBT module, and the second thermal resistance branch is used to characterize a heat conduction path from the press-bonded IGBT chip to a bottom housing, the first double-sided thermal resistance network model being a double-sided thermal resistance network model corresponding to a temperature of the top housing as a reference temperature, and the second double-sided thermal resistance model being a double-sided thermal resistance network model corresponding to a temperature of the bottom housing as a reference temperature; The junction temperature of the press-bonded IGBT chip is estimated according to the first double-sided thermal resistance network model and the second double-sided thermal resistance network model.

2. The method for estimating junction temperature of a press-bonded IGBT module according to claim 1, wherein: The estimating the junction temperature of the press-bonded IGBT chip according to the first double-sided thermal resistance network model and the second double-sided thermal resistance network model includes: determining a junction temperature inside the press-bonded IGBT chip according to a heat flow ratio between the first thermal resistance branch and the second thermal resistance branch, a heat flow power of the first thermal resistance branch, and a heat flow power of the second thermal resistance branch; The junction temperature of the press-bonded IGBT chip is estimated according to the junction temperature.

3. The method for estimating junction temperature of a press-bonded IGBT module according to claim 2, wherein: When the junction temperature of the press-bonded IGBT chip is estimated according to the first double-sided thermal resistance network model, determining the junction temperature inside the press-bonded IGBT chip according to the heat flow ratio of the first thermal resistance branch to the second thermal resistance branch, the heat flow power of the first thermal resistance branch, and the heat flow power of the second thermal resistance branch includes: determining a first virtual junction-to-case thermal resistance between the press-bonded IGBT chip and the bottom housing according to the heat flow ratio and a first thermal resistance, wherein the first thermal resistance is the thermal resistance between the press-bonded IGBT chip and the top housing when heat is dissipated through the first thermal resistance branch; Alternatively, the first virtual junction-to-case thermal resistance is determined based on a first coefficient and the first thermal resistance, wherein the first coefficient is determined based on the thermal resistance of the top case, the first thermal resistance, and the second thermal resistance, and the second thermal resistance is the thermal resistance between the press-bonded IGBT chip and the bottom case when heat is dissipated through the second thermal resistance branch; The junction temperature is determined according to the first virtual junction-to-case thermal resistance, the first thermal resistance, the power loss of the press-bonded IGBT chip, and the temperature of the top surface of the case.

4. The method for estimating junction temperature of a press-bonded IGBT module according to claim 2, wherein: When the junction temperature of the press-bonded IGBT chip is estimated according to the second double-sided thermal resistance network model, determining the junction temperature inside the press-bonded IGBT chip according to the heat flow ratio of the first thermal resistance branch to the second thermal resistance branch, the heat flow power of the first thermal resistance branch, and the heat flow power of the second thermal resistance branch includes: Determining a second virtual junction-to-case thermal resistance of the press-bonded IGBT chip to the top shell according to the heat flow ratio and the second thermal resistance; Alternatively, the second virtual junction-to-case thermal resistance is determined based on a second coefficient and the second thermal resistance, where the second coefficient is the reciprocal of the first coefficient; The junction temperature is determined according to the second virtual junction-to-case thermal resistance, the second thermal resistance, the power loss of the press-bonded IGBT chip, and the temperature of the bottom case.

5. The method for estimating junction temperature of a press-bonded IGBT module according to any one of claims 2 to 4, wherein: The method for obtaining the heat flow ratio includes: determining the heat flow ratio according to the heat flow power of the first thermal resistance branch and the heat flow power of the second thermal resistance branch; Alternatively, the heat flow ratio is obtained according to the temperature of the top shell, the temperature of the bottom shell, and the external environment temperature.

6. The method for estimating junction temperature of a press-bonded IGBT module according to claim 5, wherein: A method for obtaining the heat flow power of the first thermal resistance branch and the heat flow power of the second thermal resistance branch includes: The heat flow power of the first thermal resistance branch and the heat flow power of the second thermal resistance branch are obtained according to the temperature of the top shell, the temperature of the bottom shell, the external environment temperature, and the power loss of the press-bonded IGBT chip.

7. A device for estimating junction temperature of a press-fit IGBT module, characterized in that: include: A model construction module is used to determine a first double-sided thermal resistance network model and a second double-sided thermal resistance network model based on a first thermal resistance branch and a second thermal resistance branch in a press-bonded insulated gate bipolar transistor (IGBT) module, wherein the first thermal resistance branch is used to characterize a heat conduction path from a press-bonded IGBT chip to a top housing in the press-bonded IGBT module, and the second thermal resistance branch is used to characterize a heat conduction path from the press-bonded IGBT chip to a bottom housing. The first double-sided thermal resistance network model is a double-sided thermal resistance network model corresponding to a temperature of the top housing as a reference temperature, and the second double-sided thermal resistance model is a double-sided thermal resistance network model corresponding to a temperature of the bottom housing as a reference temperature. A junction temperature estimation module is used to estimate the junction temperature of the press-bonded IGBT chip based on the first double-sided thermal resistance network model and the second double-sided thermal resistance network model.

8. An electronic device, characterized in that: include: at least one memory for storing a computer program; At least one processor is configured to execute the program stored in the memory, and when the program stored in the memory is executed, the processor is configured to execute the method according to any one of claims 1 to 6.

9. A computer-readable storage medium storing a computer program, characterized in that: When the computer program is run on a processor, the processor is caused to perform the method according to any one of claims 1 to 6.

10. A computer program product, characterized in that When the computer program product is run on a processor, the processor is caused to perform the method according to any one of claims 1 to 6.

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