Mask pattern correction method and system

Abstract

The present disclosure provides a method and system for pattern correction of a mask, the method comprising: obtaining a target pattern; performing optical proximity correction on a photolithography pattern of the target pattern; judging whether the spacing between adjacent photolithography patterns along a first direction is less than a preset distance, and outputting the photolithography pattern if the judgment result is no; and if the judgment result is yes, adding an auxiliary pattern to the edge of the target pattern along a second direction to update the target pattern or adjusting the size of the auxiliary pattern to increase the edge length of the target pattern along the second direction, and returning to the step of performing optical proximity correction on the photolithography pattern of the target pattern, the first direction being perpendicular to the second direction, and along the second direction, the size of the photolithography pattern changes in the same direction as the size of the target pattern. The pattern correction method disclosed in the present disclosure can improve the convergence and accuracy of the target pattern while ensuring that the photolithography pattern meets the minimum size rule value of the mask, thereby ensuring the accuracy of photolithography and further ensuring the performance of the product.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor manufacturing technology, and in particular to a mask pattern correction method and system thereof. Background Art

[0002] The photolithography process is an important process in the semiconductor device manufacturing process; the photolithography process uses exposure and development to transfer the pattern on the photomask to the photoresist layer. However, in the photolithography process, when the pattern on the mask is transferred to the photoresist layer through exposure and development, due to the imperfection of the optical system and the diffraction effect, the pattern on the photoresist layer and the pattern on the photomask will deviate, which will affect the performance of the product when the product is formed based on the pattern on the photoresist. Optical Proximity Correction (OPC) is a commonly used correction method. In the OPC process, in order to prevent the pattern from being short-circuited or disconnected, the line width and spacing of the pattern are usually detected according to the set mask minimum size rule value (MaskRule Constraints, MRC) (including line width value and spacing value). However, the introduction of MRC will have a greater impact on the convergence of OPC, affect the accuracy of the correction, and lead to large errors, thereby affecting the performance of the product. Summary of the invention

[0003] In view of the above problems, a new mask pattern correction method and system thereof are yet to be proposed.

[0004] According to one aspect of the present disclosure, a method for correcting a pattern of a mask is provided, comprising:

[0005] Acquire a target pattern;

[0006] performing optical proximity correction on the lithographic pattern of the target pattern;

[0007] Determining whether a distance between adjacent photolithography patterns along a first direction is less than a preset distance, and if the determination result is no, outputting the photolithography pattern; and

[0008] If the judgment result is yes, an auxiliary pattern is added along the second direction at the edge of the target pattern to update the target pattern or the size of the auxiliary pattern is adjusted to increase the edge length of the target pattern along the second direction, and the process returns to the step of performing optical proximity correction on the photolithography pattern of the target pattern.

[0009] wherein the first direction is perpendicular to the second direction,

[0010] Along the second direction, the size of the photolithography pattern increases as the size of the target pattern increases.

[0011] Optionally, the step of adding the auxiliary pattern to the edge of the target pattern along the second direction includes: adding the auxiliary pattern to one side or both sides of the edge of the target pattern along the second direction.

[0012] Optionally, the auxiliary pattern is close to an edge of the target pattern adjacent to the photolithography pattern with a spacing smaller than the preset distance.

[0013] Optionally, the auxiliary pattern is rectangular, and both the length and the width of the auxiliary pattern are smaller than the minimum size of the optical proximity correction.

[0014] Optionally, the target pattern in the step of acquiring the target pattern is rectangular, and the updated target pattern is H-shaped or convex.

[0015] Optionally, the step of adjusting the size of the auxiliary pattern includes updating the length and width of the auxiliary pattern by adopting an iterative method.

[0016] According to another aspect of the present disclosure, a pattern correction system for a mask is provided, comprising:

[0017] An acquisition module, used for acquiring a target pattern;

[0018] An optical proximity correction module, used for performing optical proximity correction on the photolithography pattern of the target pattern;

[0019] a judging module, configured to judge whether a distance between adjacent photolithography patterns along a first direction is less than a preset distance, and output the photolithography pattern if the judging result of the judging module is no; and

[0020] a pattern correction module, configured to, if the judgment result of the judgment module is yes, add an auxiliary pattern along the second direction to the edge of the target pattern to update the target pattern or adjust the size of the auxiliary pattern, and send the updated target pattern to the optical proximity correction module,

[0021] wherein the first direction is perpendicular to the second direction,

[0022] Along the second direction, the size of the photolithography pattern increases as the size of the target pattern increases.

[0023] Optionally, the pattern correction module is used to add auxiliary patterns to one side or both side edges of the target pattern along the second direction to increase the edge length of the target pattern along the second direction.

[0024] Optionally, the auxiliary pattern is close to an edge of the target pattern adjacent to the photolithography pattern with a spacing smaller than the preset distance.

[0025] Optionally, the auxiliary pattern is rectangular, and both the length and the width of the auxiliary pattern are smaller than the minimum size of the optical proximity correction.

[0026] One of the above technical solutions has the following unexpected technical effects:

[0027] In order to ensure that the distance between adjacent photolithography patterns along the first direction is not less than the preset distance, it is necessary to limit the size of the photolithography pattern in the first direction (for example, limit the width of the photolithography pattern). At this time, the edge length of the target pattern along the second direction can be increased by adding auxiliary patterns. After the optical proximity correction step, the size of the photolithography pattern along the second direction will also increase accordingly (for example, the length of the photolithography pattern is increased), thereby ensuring that the area of ​​the photolithography pattern reaches the preset area. While ensuring that the photolithography pattern meets the minimum size rule value of the mask, the convergence and accuracy of the target pattern can be improved, thereby ensuring the accuracy of lithography and further ensuring the performance of the product.

[0028] In some embodiments, by making the length and width of the auxiliary pattern smaller than the minimum size of the optical proximity correction, in the step of optical proximity correction, only the size ratio of the photolithography pattern in the first and second directions is changed without changing the overall morphology of the photolithography pattern, so that the final product meets the design requirements.

[0029] It should be noted that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The above and other objects, features and advantages of the present application will become more apparent through the following description of the embodiments of the present application with reference to the accompanying drawings, in which:

[0031] Figure 1 A schematic diagram of the structure of a photolithography pattern after an optical proximity correction step in the related art is shown;

[0032] Figure 2 A schematic diagram of the structure of a photolithography pattern after a minimum size rule value detection step in the related art is shown;

[0033] Figure 3 A schematic diagram showing the steps of a method for correcting a pattern of a mask according to an embodiment of the present disclosure is shown;

[0034] Figure 4 A schematic diagram showing the structure of the photolithography pattern of the first embodiment of the present disclosure after the optical proximity correction step;

[0035] Figure 5 A schematic diagram of the structure of adding an auxiliary pattern to the edge of a target pattern in the first embodiment of the present disclosure is shown;

[0036] Figure 6 A schematic structural diagram of an updated target pattern according to the first embodiment of the present disclosure is shown;

[0037] Figure 7 A schematic structural diagram of a lithographic pattern of an updated target pattern after an optical proximity correction step according to the first embodiment of the present disclosure is shown;

[0038] Figure 8 A schematic diagram of the structure of adding an auxiliary pattern to the edge of a target pattern in the second embodiment of the present disclosure is shown;

[0039] Fig. 9 A schematic structural diagram of a photolithographic pattern of an updated target pattern after an optical proximity correction step according to a second embodiment of the present disclosure is shown;

[0040] Fig.10 A schematic structural diagram of a mask before a target pattern is updated according to a third embodiment of the present disclosure is shown;

[0041] Fig.11 A schematic structural diagram of a mask after updating a target pattern according to a third embodiment of the present disclosure is shown;

[0042] Fig.12 A schematic structural diagram of a mask before a target pattern is updated according to a fourth embodiment of the present disclosure is shown;

[0043] Fig.13 A schematic structural diagram of a mask after updating a target pattern according to a fourth embodiment of the present disclosure is shown;

[0044] Fig.14 A schematic structural diagram of a pattern correction system for a mask according to an embodiment of the present disclosure is shown. DETAILED DESCRIPTION

[0045] The present application will be described in more detail below with reference to the accompanying drawings. In each of the accompanying drawings, the same elements are represented by similar reference numerals. For the sake of clarity, the various parts in the accompanying drawings are not drawn to scale. In addition, some well-known parts may not be shown.

[0046] Many specific details of the present disclosure are described below, such as device structure, materials, dimensions, processing technology and techniques, so as to more clearly understand the present disclosure. However, as those skilled in the art will appreciate, the present disclosure may be implemented without following these specific details.

[0047] At the same time, certain words are used in this patent specification and claims to refer to specific components. It should be understood by those skilled in the art that hardware manufacturers may use different terms to refer to the same component. This patent specification and claims do not use differences in names as a way to distinguish components, but rather use differences in components' functions as the criteria for distinction.

[0048] In addition, it should be noted that, in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or equipment. In the absence of more restrictions, the elements defined by the statement "comprise one..." do not exclude the existence of other identical elements in the process, method, article or equipment including the elements.

[0049] This application may be presented in a variety of forms, some examples of which are described below.

[0050] Figure 1 A schematic diagram of the structure of a photolithography pattern after an optical proximity correction step in the related art is shown.

[0051] In the related art, when a hole layer in a chip needs to be made, a mask for the hole layer is needed. The hole layer includes a contact hole (CT) layer and a via (Via) layer. The contact hole CT is a hole used to connect a metal wire to a transistor, and the via is a hole used to connect different metal layers. Figure 1 In the mask of the hole layer, the target pattern 110 is set to a rectangle. After the photolithography process is completed using the mask, the pattern 10 actually presented on the photoresist is circular or elliptical. In order to present the pattern 10 on the photoresist, when manufacturing the mask, it is necessary to set the photolithography pattern 120 on both sides of the target pattern 110 along the X-axis direction or the Y-axis direction. Take the setting of the photolithography pattern 120 on both sides of the target pattern 110 along the X-axis direction as an example, wherein the spacing between two adjacent target patterns 110 along the X-axis direction is preset to D. After the optical proximity correction step is completed, the photolithography pattern 120 is rectangular with a width of d1, and the spacing between two adjacent photolithography patterns along the X-axis direction is d2. Due to the manufacturing process limitations of the mask, if d2 is too small, the mask cannot be manufactured or the product quality is very poor. Therefore, there is a limit on the size of d2, and it is necessary to pass the mask minimum size rule value detection.

[0052] Figure 2 A schematic diagram of the structure of a photolithography pattern after a minimum size rule value detection step in the related art is shown.

[0053] See also Figure 2 After completing the minimum size rule value (MRC) detection step, if the spacing d2 between two adjacent photolithography patterns along the X-axis direction is too small, the spacing d2 needs to be enlarged so as to pass the MRC detection. However, when the spacing D between two adjacent target patterns 110 along the X-axis direction cannot be changed, the width d1 of the photolithography pattern 120 can only be reduced to enlarge the spacing d2. In the subsequent photolithography process, there will be edge errors E1 and E2 between the pattern 10 actually presented on the photoresist and the target pattern 110. This is why the introduction of MRC detection will have a greater impact on the convergence of the optical proximity correction (OPC), affecting the accuracy of OPC, resulting in larger errors, thereby affecting the performance of the product.

[0054] In view of the above problems, the present disclosure proposes a new mask pattern correction method and system.

[0055] Figure 3 A schematic diagram showing the steps of a method for correcting a pattern of a mask according to an embodiment of the present disclosure is shown.

[0056] like Figure 3 As shown, the pattern correction method of the mask of the embodiment of the present disclosure includes:

[0057] In step S01, a target pattern is obtained;

[0058] In step S02, optical proximity correction is performed on the lithographic pattern of the target pattern;

[0059] In step S03, it is determined whether the spacing between adjacent photolithography patterns along the first direction is less than a preset distance. If the determination result is no, step S05 is performed to output the photolithography pattern.

[0060] In step S04, if the judgment result in step S03 is yes, an auxiliary pattern is added to the edge of the target pattern along the second direction to update the target pattern or the size of the auxiliary pattern is adjusted to increase the edge length of the target pattern along the second direction, and the process returns to step S02, wherein the first direction is perpendicular to the second direction, and along the second direction, the size of the photolithography pattern increases as the size of the target pattern increases. In some preferred embodiments, a step of setting a scattering strip pattern may be performed before step S02. Figures 4 to 7 The steps of the pattern correction method of the mask plate according to the embodiment of the present disclosure are described in detail.

[0061] Figure 4FIG. 1 shows a schematic structural diagram of the photolithography pattern of the first embodiment of the present disclosure after the optical proximity correction step, wherein: Figure 4 Only a portion of the target pattern and the lithographic pattern are shown.

[0062] See also Figure 4 , obtaining a target pattern 110, wherein, according to optical principles, in order to ultimately present a hole pattern on the photoresist, the target pattern 110 is generally rectangular, and there are multiple target patterns 110, which may also be arranged in an array, however, the present disclosure is not limited thereto, and those skilled in the art may make other settings for the shape, quantity, and arrangement of the target pattern 110 as needed.

[0063] See also Figure 4 After optical proximity correction is performed on the photolithography pattern 120 of the target pattern 110, the distance d2 between the photolithography patterns 120 located on both sides of the target pattern 110 along the first direction (the two photolithography patterns 120 adjacent to the edge 11 and the edge 12) and the adjacent photolithography patterns 120 is less than the preset distance, that is, the minimum size rule value (MRC) detection is not passed, and step S04 needs to be performed at this time.

[0064] Figure 5 A schematic structural diagram of adding an auxiliary pattern to the edge of a target pattern in the first embodiment of the present disclosure is shown.

[0065] See also Figure 5 , an auxiliary pattern 111 is added to the edge of the target pattern 110 along the second direction. In the first embodiment of the present disclosure, the first direction is the X-axis direction, the second direction is the Y-axis direction, the auxiliary pattern 111 is rectangular, and the length L and width W of the auxiliary pattern 111 are both smaller than the minimum size of the optical proximity correction. However, the embodiments of the present disclosure are not limited thereto, and those skilled in the art can set the shape of the auxiliary pattern 111 in other ways as needed.

[0066] In some specific embodiments, since the distance d2 between the photolithography pattern 120 adjacent to the edge 11 and the adjacent photolithography pattern 120 is less than the preset distance, it is necessary to add auxiliary patterns 111 along the Y-axis direction at the positions of the two edges 13 and 14 of the target pattern 110 close to the edge 11, and similarly, add auxiliary patterns 111 along the Y-axis direction at the positions of the two edges 13 and 14 of the target pattern 110 close to the edge 12. In other specific embodiments, the auxiliary pattern 111 may also be provided only on a single side of the target pattern 110, for example, the auxiliary pattern 111 is provided only on the edge 13 or the edge 14.

[0067] Figure 6 A schematic structural diagram of an updated target pattern according to the first embodiment of the present disclosure is shown.

[0068] See also Figure 5 and Figure 6 The initial target pattern 110 is combined with the auxiliary pattern 111 to be updated into a new target pattern 110 a , and the target pattern 110 a is H-shaped.

[0069] Figure 7 A schematic structural diagram of a lithographic pattern of an updated target pattern according to the first embodiment of the present disclosure after an optical proximity correction step is shown.

[0070] See also Figure 7 , after returning to step S02, optical proximity correction is performed on the updated photolithography pattern 120a of the target pattern 110a. Wherein, due to the setting of the auxiliary pattern 111, the lengths d4 of the edges 11a and 12a of the target pattern 110a are both greater than the lengths of the edges 11 and 12 of the initial target pattern 110, and therefore, the length d3 of the photolithography pattern 120a along the Y-axis direction after the optical proximity correction is also increased. In order to ensure that the spacing d2 between adjacent photolithography patterns 120a along the X-axis direction is not less than the preset distance, the length of the width d1 of the photolithography pattern 120a along the X-axis direction is limited, however, due to the increase in the length d3 of the photolithography pattern 120a along the Y-axis direction, the total area of ​​the photolithography pattern 120a can still meet the design requirements, so that the pattern finally presented on the photoresist is consistent with the key size of the updated target pattern 110a. At the same time, since the spacing d2 between adjacent photolithographic patterns 120a along the X-axis direction is guaranteed to be not less than the preset distance, the MRC detection can be performed to output the photolithographic pattern 120a in step S05. In addition, since the size of the auxiliary pattern 111 does not exceed the minimum size of the optical proximity correction, in the step of optical proximity correction, compared with the photolithographic pattern 120, only the size ratio of the photolithographic pattern 120a in the X-axis and Y-axis directions is changed, and the overall morphology of the photolithographic pattern 120a is not changed (for example, the photolithographic pattern 120a will not be trimmed out of a corner in the area close to the auxiliary pattern 111), so that the pattern finally presented on the photoresist remains unchanged as much as possible, thereby avoiding the error between the pattern actually presented on the photoresist and the target pattern 110a as much as possible.

[0071] If the photolithographic pattern 120a still cannot pass the MRC detection, the step S04 is performed to adjust the size of the auxiliary pattern 111 to further increase the edge length d3 of the target pattern 110a along the Y-axis direction. In some specific embodiments, the length L and width W of the auxiliary pattern 111 can be updated by an iterative method, for example, the length L and width W of the auxiliary pattern 111 are increased by 1 nanometer each time. Of course, the increase size of the length L and width W of the auxiliary pattern 111 can be set as needed, not limited to 1 nanometer. In addition, the length L and width W of the auxiliary pattern 111 can also be manually adjusted. It should be noted that the size of the auxiliary pattern 111 after adjustment still does not exceed the minimum size of the optical proximity correction.

[0072] Figure 8 A schematic structural diagram of adding an auxiliary pattern to the edge of a target pattern in the second embodiment of the present disclosure is shown.

[0073] See also Figure 8 If, after optical proximity correction is performed on the photolithography pattern 120 of the initial target pattern 110, the distance between the photolithography pattern adjacent to the edge 12 along the X-axis direction and the adjacent photolithography pattern is less than the preset distance, that is, it fails to pass the minimum size rule value (MRC) detection, step S04 needs to be performed.

[0074] Auxiliary patterns 111 are added to the two edges 13 and 14 of the initial target pattern 110 along the Y-axis direction, and the auxiliary pattern 111 is close to the edge 12. The auxiliary pattern 111 is rectangular in shape, and the length L and width W of the auxiliary pattern 111 are both smaller than the minimum size of the optical proximity correction. However, the present disclosure is not limited thereto, and those skilled in the art can set the shape of the auxiliary pattern 111 in other ways as needed.

[0075] Fig. 9 A schematic structural diagram of a lithographic pattern of an updated target pattern according to the second embodiment of the present disclosure after an optical proximity correction step is shown.

[0076] See also Fig. 9 The similarities with the first embodiment are not repeated here. The difference is that the initial target pattern 110 is updated to a new target pattern 110a after being combined with the auxiliary pattern 111, and the target pattern 110a is in a convex shape.

[0077] Fig.10 FIG. 4 shows a schematic structural diagram of a mask before a target pattern is updated according to a third embodiment of the present disclosure. Fig.11 FIG. 1 is a schematic diagram showing the structure of the mask after the target pattern is updated in the third embodiment of the present disclosure. Fig.10 and Fig.11 The mask shown in FIG. 1 is only a portion of the structure.

[0078] See also Fig.10 In the mask 101 before the target pattern is updated, the initial target pattern 110 matches the critical dimension of the pattern 10 presented on the photoresist, but the spacing d2 of the photolithographic pattern 120 along the X-axis direction is 29.2nm, while the minimum size rule value MRC requires that the spacing d2 cannot be less than 40nm. Using the pattern correction method of the mask of the embodiment of the present disclosure, the following can be obtained: Fig.11 The mask 102 shown in the figure, wherein the initial target pattern 110 is combined with the auxiliary pattern to be updated into a new target pattern 110a, wherein the length of the auxiliary pattern is, for example, 21nm and the width is, for example, 20nm. At this time, not only does the target pattern 110a match the critical dimensions of the pattern 10 presented on the photoresist, but also the spacing d2 of the photolithographic pattern 120a along the X-axis direction is 53.3nm, which meets the requirement that the spacing d2 cannot be less than 40nm in the minimum size rule value MRC. In this embodiment, (53.3-29.2) / 40>60%, therefore, for Fig.10 The improvement of the spacing d2 that violates the minimum size rule value MRC is greater than 60%.

[0079] It should be noted that the various dimensions in the third embodiment are only examples, and those skilled in the art may adjust the dimensions as needed. The mask plate 102 finally manufactured does not include the target pattern 110a and the pattern 10 presented on the photoresist, but includes a background area and a photolithography pattern 120a. If the background area is opaque, the photolithography pattern 120a is translucent, and conversely, if the background area is translucent, the photolithography pattern 120a is opaque.

[0080] Fig.12 FIG. 4 is a schematic diagram showing the structure of a mask before the target pattern is updated according to the fourth embodiment of the present disclosure. Fig.13 FIG. 4 is a schematic diagram showing the structure of the mask after the target pattern is updated according to the fourth embodiment of the present disclosure. Fig.12 and Fig.13 The mask shown in FIG. 1 is only a portion of the structure.

[0081] See also Fig.12 In the mask 103 before the target pattern is updated, the initial target pattern 110 matches the critical dimension of the pattern 10 presented on the photoresist, but the spacing d2 of the photolithographic pattern 120 along the Y-axis direction is 26.6nm, while the minimum dimension rule value MRC requires that the spacing d2 cannot be less than 40nm. In this embodiment, the Y-axis direction is the first direction and the X-axis direction is the second direction. Using the pattern correction method of the mask of the embodiment of the present disclosure, the following can be obtained: Fig.13The mask 104 shown in the figure, wherein the initial target pattern 110 is combined with the auxiliary pattern to be updated into a new target pattern 110a, wherein the length of the auxiliary pattern is, for example, 21nm and the width is, for example, 20nm. At this time, not only does the target pattern 110a match the critical dimensions of the pattern 10 presented on the photoresist, but also the spacing d2 of the photolithographic pattern 120a along the Y-axis direction is 43.4nm, which meets the requirement that the spacing d2 cannot be less than 40nm in the minimum size rule value MRC. In this embodiment, (43.4-26.6) / 40>40%, therefore, for Fig.12 The improvement of the spacing d2 that violates the minimum size rule value MRC is greater than 40%.

[0082] It should be noted that the various dimensions in the fourth embodiment are only examples, and those skilled in the art may adjust the dimensions as needed. The mask plate 104 finally manufactured does not include the target pattern 110a and the pattern 10 presented on the photoresist, but includes a background area and a photolithography pattern 120a. If the background area is opaque, the photolithography pattern 120a is translucent, and conversely, if the background area is translucent, the photolithography pattern 120a is opaque.

[0083] Fig.14 A schematic structural diagram of a pattern correction system for a mask according to an embodiment of the present disclosure is shown.

[0084] See also Fig.14 The pattern correction system of the mask template of the embodiment of the present disclosure includes: an acquisition module 210, an optical proximity correction module 220, a judgment module 230 and a pattern correction module 240.

[0085] The acquisition module 210 is used to acquire a target pattern. The optical proximity correction module 220 is used to perform optical proximity correction on a photolithography pattern of the target pattern. The judgment module 230 is used to judge whether the spacing between adjacent photolithography patterns along a first direction is less than a preset distance, and if the judgment result of the judgment module 230 is no, the photolithography pattern is output. The pattern correction module 240 is used to add an auxiliary pattern to the edge of the target pattern along a second direction to update the target pattern or adjust the size of the auxiliary pattern when the judgment result of the judgment module 230 is yes, and send the updated target pattern to the optical proximity correction module, wherein the first direction is perpendicular to the second direction, and along the second direction, the size of the photolithography pattern increases as the size of the target pattern increases.

[0086] In some optional embodiments, the pattern correction module 240 is used to add auxiliary patterns to one side or both side edges of the target pattern along the second direction to increase the edge length of the target pattern along the second direction.

[0087] In some optional embodiments, the auxiliary pattern is close to an edge of a target pattern of a photolithography pattern having a spacing smaller than a predetermined distance from the adjacent pattern.

[0088] In some optional embodiments, the auxiliary pattern is rectangular, and both the length and the width of the auxiliary pattern are smaller than the minimum size of the optical proximity correction.

[0089] The pattern correction system of the mask plate of the embodiment of the present disclosure can use the pattern correction method of the mask plate of the embodiment of the present disclosure to correct the pattern of the mask plate, and the mask plate is, for example, a mask plate for a hole layer in a semiconductor manufacturing process.

[0090] One of the above technical solutions has the following unexpected technical effects:

[0091] In order to ensure that the distance between adjacent photolithographic patterns along the first direction is not less than the preset distance, when the size of the photolithographic pattern is limited in the first direction (for example, the width of the photolithographic pattern is limited), the edge length of the target pattern along the second direction can be increased by adding auxiliary patterns, and the size of the photolithographic pattern along the second direction will also increase after the optical proximity correction step (for example, the length of the photolithographic pattern is increased), thereby ensuring that the area of ​​the photolithographic pattern reaches the preset area. The present disclosure uses this solution to correct the photolithographic pattern of the target pattern, and the unexpected effect is: while ensuring that the photolithographic pattern meets the minimum size rule value of the mask, the convergence and accuracy of the target pattern can be improved, the accuracy of the lithography is ensured, and the performance of the product is further ensured.

[0092] In some embodiments, by making the length and width of the auxiliary pattern smaller than the minimum size of the optical proximity correction, in the step of optical proximity correction, only the size ratio of the photolithography pattern in the first and second directions is changed without changing the overall morphology of the photolithography pattern, so that the final product meets the design requirements.

[0093] A person skilled in the art can understand that all or part of the processes in the above-mentioned embodiments can be implemented by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to a memory, a database or other medium used in the embodiments provided in this application can include at least one of a non-volatile and a volatile memory.

[0094] According to the embodiments of the present disclosure as above, these embodiments do not describe all the details in detail, nor do they limit the invention to specific embodiments. Obviously, many modifications and changes can be made based on the above description. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present disclosure, so that those skilled in the art can make good use of the present disclosure and the modifications based on the present disclosure. The scope of protection of the present disclosure shall be based on the scope defined by the claims of the present disclosure and their equivalents.

Claims

1. A method for correcting a pattern of a mask, comprising: Acquire a target pattern; performing optical proximity correction on the lithographic pattern of the target pattern; Determine whether the corrected spacing between adjacent photolithography patterns along the first direction is less than a preset distance, and if the determination result is no, output the photolithography pattern; as well as If the judgment result is yes, the target pattern is updated, and the process returns to the step of performing optical proximity correction on the photolithography pattern of the target pattern. Wherein, updating the target pattern comprises: adding an auxiliary pattern to the edge of the target pattern along the second direction or adjusting the size of the auxiliary pattern to increase the edge length of the target pattern along the second direction, The first direction is perpendicular to the second direction, Along the second direction, the size of the photolithography pattern increases as the size of the target pattern increases.

2. The pattern correction method according to claim 1, wherein: The step of adding the auxiliary pattern to the edge of the target pattern along the second direction includes: adding the auxiliary pattern to one side or both sides of the edge of the target pattern along the second direction.

3. The pattern correction method according to claim 1 or 2, wherein: The auxiliary pattern is close to an edge of the target pattern adjacent to the photolithography pattern with a spacing smaller than the preset distance.

4. The pattern correction method according to claim 1 or 2, wherein: The auxiliary pattern is rectangular, and both the length and the width of the auxiliary pattern are smaller than the minimum size of the optical proximity correction.

5. The pattern correction method according to claim 1 or 2, wherein: The target pattern in the step of acquiring the target pattern is rectangular, and the updated target pattern is H-shaped or convex.

6. The pattern correction method according to claim 4, wherein: The step of adjusting the size of the auxiliary pattern includes updating the length and width of the auxiliary pattern by adopting an iterative method.

7. A mask pattern correction system, comprising: An acquisition module, used for acquiring a target pattern; An optical proximity correction module, used for performing optical proximity correction on the photolithography pattern of the target pattern; A judging module, used for judging whether the interval between the corrected photolithography patterns adjacent to each other along the first direction is less than a preset distance, and outputting the photolithography pattern if the judging result of the judging module is no; as well as a pattern correction module, configured to update the target pattern if the judgment result of the judgment module is yes, and send the updated target pattern to the optical proximity correction module, Wherein, updating the target pattern comprises: adding an auxiliary pattern to the edge of the target pattern along the second direction or adjusting the size of the auxiliary pattern to increase the edge length of the target pattern along the second direction, The first direction is perpendicular to the second direction, Along the second direction, the size of the photolithography pattern increases as the size of the target pattern increases.

8. The pattern correction system according to claim 7, wherein: The pattern correction module is used to add auxiliary patterns to one side or both side edges of the target pattern along the second direction to increase the edge length of the target pattern along the second direction.

9. The pattern correction system according to claim 7 or 8, wherein: The auxiliary pattern is close to an edge of the target pattern adjacent to the photolithography pattern with a spacing smaller than the preset distance.

10. The pattern correction system according to claim 7 or 8, wherein: The auxiliary pattern is rectangular, and both the length and the width of the auxiliary pattern are smaller than the minimum size of the optical proximity correction.

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