Ion density detection device and ion density measurement method thereof

Abstract

The present disclosure relates to the technical field of integrated circuit manufacturing, and provides an ion density detection device and an ion density measurement method thereof. The device includes: an ion receiving component and a processing circuit component; the ion receiving component includes a wafer, an ion receiving distribution pattern distributed on the surface of the wafer, and an electrical circuit in the wafer, the ion receiving distribution pattern includes a plurality of ion receiving parts; a plurality of electrical circuits are electrically connected to each ion receiving part respectively; the processing circuit component includes a signal acquisition unit and an ion density calculation unit, the signal acquisition unit connects a plurality of electrical circuits to obtain the current value corresponding to the loop of each electrical circuit; the ion density calculation unit can calculate the current density value representing the ion density information of each wafer surface area according to the area ratio of each current value to the corresponding ion receiving part, and can transmit it wirelessly. Thus, the current density value representing the ion density of each area on the wafer surface is obtained by using the wafer ion receiving distribution pattern, so as to achieve accurate and efficient measurement.

Description

Technical Field

[0001] The present disclosure relates to the technical field of integrated circuit manufacturing, and in particular to an ion density detection device and an ion density measurement method thereof. Background Art

[0002] For current semiconductor plasma stripping equipment, plasma etching equipment, plasma thin film deposition equipment, etc., the ion density distribution on the wafer surface in the reaction chamber of these equipment is an important data, which can provide a theoretical basis for process reaction phenomena and guide the direction of process adjustment to a certain extent. However, there is currently no instrument that can easily measure the ion density in different areas of the wafer surface. Summary of the invention

[0003] In view of the above-mentioned shortcomings of the prior art, the purpose of the present disclosure is to provide an ion density detection device and an ion density measurement method thereof to solve the problems in the related art.

[0004] The first aspect of the present disclosure provides an ion density detection device, which is applied to plasma process equipment; the device includes: an ion receiving component, including: a wafer, an ion receiving distribution pattern and a plurality of electrical circuits; the wafer is placed in a reaction chamber of the plasma process equipment; the ion receiving distribution pattern is formed on the surface of the wafer, including: a plurality of conductive ion receiving parts arranged in different areas of the wafer surface; wherein the ion receiving parts are in conductive contact with the plasma in the reaction chamber; the plurality of electrical circuits are arranged in the wafer and are electrically connected to each of the ion receiving parts respectively; the ion receiving distribution pattern includes: an ion receiving part located at the center of the wafer surface, and a sub-pattern including at least one ion receiving part arranged in a ring around the center of the wafer surface; each of the ion receiving parts has an area that can be determined according to its shape; a processing circuit component includes: a signal acquisition unit connected to the plurality of electrical circuits, the signal acquisition unit includes a plurality of signal acquisition circuits, connected to each electrical circuit one by one, the signal acquisition circuit includes: a resistor and a resistor connected in series to the electrical circuit; The source is connected to the ground terminal on the reaction chamber through the plasma conduction to form a loop, which is used to collect the electrical signal value in each loop to obtain the corresponding current value; the electrical signal value is used to calculate the current value of the current in the loop, and the current value is used to calculate the ratio between it and the area of ​​the corresponding ion receiving part to obtain the current density value of each ion receiving part, as the ion density information of the surface area of ​​the wafer where each ion receiving part is located; the signal acquisition circuit also includes: a measuring unit for measuring the electrical signal value flowing through the loop; the processing circuit component also includes: an ion density calculation unit, which is connected to each of the measuring units to calculate each of the current density values; the signal acquisition unit and the ion density calculation unit are connected by wired communication, the signal acquisition unit and the ion density calculation unit are placed in the reaction chamber of the plasma process equipment together with the wafer, and the ion density calculation unit is connected to the external wireless communication; or, the signal acquisition unit and the ion density calculation unit are connected by wireless communication, the signal acquisition unit and the wafer are placed in the reaction chamber together, and the ion density calculation unit is placed outside the reaction chamber.

[0005] In an example of the first aspect, the sub-pattern includes a plurality of ion receiving portions distributed at intervals.

[0006] In an example of the first aspect, the number of ion receiving portions in the sub-pattern is positively correlated with the distance between the ion receiving portions and the center of the wafer surface.

[0007] In an example of the first aspect, each of the sub-patterns is formed by an annular ion receiving portion.

[0008] In an example of the first aspect, the distribution density of the annular ion receiving portion is positively correlated with the distance relative to the center of the wafer surface.

[0009] In an example of the first aspect, the measuring unit includes: a current measurer connected in series with the resistor or a voltage measurer connected in parallel with the resistor.

[0010] A second aspect of the present disclosure provides an ion density measurement method, which is applied to plasma process equipment. The method comprises: setting a wafer having an ion density detection device according to any one of the first aspects in a reaction chamber of the plasma process equipment; when plasma is formed in the reaction chamber, obtaining a current density value corresponding to each ion receiving part of the wafer through the ion density detection device.

[0011] As described above, the present disclosure relates to the field of integrated circuit manufacturing technology, and provides an ion density detection device and an ion density measurement method thereof. The device includes: an ion receiving component and a processing circuit component; the ion receiving component includes a wafer, an ion receiving distribution pattern distributed on the surface of the wafer, and an electrical circuit in the wafer, the ion receiving distribution pattern includes a plurality of ion receiving parts; a plurality of electrical circuits are electrically connected to each ion receiving part, respectively; the processing circuit component includes a signal acquisition unit and an ion density calculation unit, the signal acquisition unit connects a plurality of electrical circuits to obtain the current value corresponding to the loop of each electrical circuit; the ion density calculation unit can calculate the current density value representing the ion density information of each wafer surface area according to the area ratio of each current value to the corresponding ion receiving part, and can transmit it wirelessly. Thus, the current density value representing the ion density of each area on the wafer surface is obtained by using the wafer ion receiving distribution pattern, so as to achieve accurate and efficient measurement. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 A schematic diagram showing the structure of an ion density detection device for plasma process equipment in one embodiment of the present disclosure.

[0013] Figure 2 exhibit Figure 1 Schematic diagram of the structure of the ion density detection device.

[0014] Figure 3 A structural schematic diagram showing an ion receiving distribution pattern in an embodiment of the present disclosure.

[0015] Figure 4 A structural schematic diagram showing an ion receiving distribution pattern in another embodiment of the present disclosure.

[0016] Figure 5 A structural schematic diagram showing an ion receiving distribution pattern in another embodiment of the present disclosure.

[0017] Figure 6A structural schematic diagram showing an ion receiving distribution pattern in yet another embodiment of the present disclosure.

[0018] Figure 7 A schematic diagram showing the connection between the ion receiving portion and the electrical circuit in the ion receiving component in one embodiment of the present disclosure is shown.

[0019] Figure 8 A schematic diagram showing the circuit principle of a signal acquisition circuit in an embodiment of the present disclosure is shown.

[0020] Fig. 9 A schematic diagram showing a flow chart of an ion density measurement method in an embodiment of the present disclosure.

[0021] Fig.10 A schematic diagram showing the structure of a computer device in an embodiment of the present disclosure is shown. DETAILED DESCRIPTION

[0022] The following is an explanation of the embodiments of the present disclosure by specific examples, and those skilled in the art can easily understand other advantages and effects of the present disclosure from the information disclosed by the present disclosure. The present disclosure can also be implemented or applied through other different specific embodiments, and the details in the present disclosure can also be modified or changed in various ways according to different viewpoints and application modules without departing from the spirit of the present disclosure. It should be noted that the embodiments in the present disclosure and the features in the embodiments can be combined with each other without conflict.

[0023] The following is a detailed description of the embodiments of the present disclosure with reference to the accompanying drawings so that those skilled in the art can easily implement the present disclosure. The present disclosure can be embodied in many different forms and is not limited to the embodiments described herein.

[0024] In the representations of the present disclosure, the reference terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" and the like mean that the specific features, structures, materials or characteristics represented in conjunction with the embodiment or example are included in at least one embodiment or example of the present disclosure. Moreover, the specific features, structures, materials or characteristics represented may be combined in any one or a group of embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples represented in the present disclosure and the features of different embodiments or examples, unless they are mutually contradictory.

[0025] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the representation of the present disclosure, "a group" means two or more, unless otherwise clearly and specifically defined.

[0026] In order to clearly describe the present disclosure, components not related to the description are omitted, and the same reference numerals are given to the same or similar components throughout the specification.

[0027] Throughout the specification, when a device is said to be "connected" to another device, this includes not only the case of "direct connection" but also the case of "indirect connection" by placing other elements therebetween. In addition, when a device is said to "include" a certain component, unless otherwise stated, it does not exclude other components, but means that other components may be included.

[0028] Although the terms first, second, etc. are used to represent various elements in this article in some examples, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, the first interface and the second interface, etc. are represented. Moreover, as used in this article, the singular forms "one", "one" and "the" are intended to also include plural forms, unless there is an opposite indication in the context. It should be further understood that the terms "comprising" and "including" indicate that there are the described features, steps, operations, elements, modules, projects, kinds, and / or groups, but do not exclude the existence, occurrence or addition of one or a group of other features, steps, operations, elements, modules, projects, kinds, and / or groups. The terms "or" and "and / or" used herein are interpreted as inclusive, or mean any one or any combination. Therefore, "A, B or C" or "A, B and / or C" means "any of the following: A; B; C; A and B; A and C; B and C; A, B and C". Only when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way, will there be an exception to this definition.

[0029] The technical terms used herein are only used to refer to specific embodiments and are not intended to limit the present disclosure. The singular form used herein also includes the plural form unless the sentence clearly indicates the contrary meaning. The meaning of "including" used in the specification is to specify specific characteristics, regions, integers, steps, operations, elements and / or components, and does not exclude the existence or addition of other characteristics, regions, integers, steps, operations, elements and / or components.

[0030] Although not defined differently, all terms, including technical and scientific terms used herein, have the same meaning as those generally understood by those skilled in the art to which the present disclosure belongs. Terms defined in commonly used dictionaries are additionally interpreted as having meanings consistent with relevant technical literature and the message of the present disclosure, and shall not be overly interpreted as ideal or very formal meanings unless defined.

[0031] In plasma processing, ion density distribution is an important data that can provide a theoretical basis for process reaction phenomena and guide the direction of process adjustment to a certain extent. However, there is currently no instrument that can easily measure the ion density of different areas on the wafer surface, and it is impossible to efficiently obtain the ion density of each area on the wafer surface at one time.

[0032] In view of this, the embodiments of the present disclosure provide an ion density detection device and an ion density detection method thereof. The ion density detection device can efficiently obtain the ion density information of each area on the wafer surface at one time, effectively solving the problem of inconvenient ion density information measurement in related technologies.

[0033] like Figure 1 and Figure 2 shown. Figure 1 A schematic structural diagram of an ion density detection device 100 used in plasma process equipment in one embodiment of the present disclosure is shown. Figure 2 exhibit Figure 1 Schematic diagram of the structure of the ion density detection device 100. Figure 1 In the embodiment, the plasma process equipment is exemplified as an ICP process equipment. In other embodiments, the plasma process equipment may also be a CCP process equipment, which is not limited to the figure.

[0034] exist Figure 1 , the ion density detection device 100 includes an ion receiving component 110 and a processing circuit component 120.

[0035] The ion receiving component 110 is disposed in the reaction chamber 200 of the plasma processing equipment, and is used to receive ion bombardment from the plasma 300 formed in the reaction chamber 200. The plasma 300 is a conductor, and the ion receiving component 110 contacts the plasma 300 and can be electrically conductive to the ground terminal on the reaction chamber 200 through the plasma 300.

[0036] In some embodiments, the ion receiving component 110 may include a wafer 111, an ion receiving distribution pattern 112 (refer to Figure 2 ) and a plurality of electrical circuits 113. Since the sample processed by the plasma process equipment is usually a semiconductor wafer 111, the wafer 111 is directly used to construct the ion receiving component 110, which is exactly the same as the material and size of the sample, thereby truly and accurately restoring the ion receiving state of the sample surface under the normal working environment of the plasma process equipment.

[0037] For reference Figure 2The ion receiving distribution pattern 112 is formed on the surface of the wafer 111, and may include a plurality of ion receiving portions 1121 disposed in different areas on the surface of the wafer 111. The ion receiving portions 1121 may be made of a conductive material, such as metal, etc. Each ion receiving portion 1121 may have a preset shape and area.

[0038] In some embodiments, the ion receiving distribution pattern 112 can be uniformly arranged circumferentially around the central axis of the wafer 111. The ion receiving distribution pattern 112 includes: a plurality of sub-patterns arranged at intervals with the center of the surface of the wafer 111 as a common center. Each of the sub-patterns is a pattern distributed along a ring. Each sub-pattern includes at least one ion receiving portion 1121 arranged circumferentially along the surface of the wafer 111.

[0039] In some embodiments, the sub-pattern may include an annular uniformly distributed ion receiving portion 1121. Figure 3 , Figure 4 and Figure 5 shown. Figure 3 A structural schematic diagram showing an ion receiving distribution pattern in an embodiment of the present disclosure. Figure 4 A structural schematic diagram showing an ion receiving distribution pattern in another embodiment of the present disclosure. Figure 5 A structural schematic diagram showing an ion receiving distribution pattern in another embodiment of the present disclosure. Figure 6 A structural schematic diagram showing an ion receiving distribution pattern in yet another embodiment of the present disclosure.

[0040] As an example, Figure 2 The sub-pattern of the ion receiving distribution pattern 112 in the embodiment includes a plurality of ion receiving parts 1121 uniformly distributed in a circumferential ring. In this embodiment, each of the ion receiving parts 1121 is implemented as a point area, which can be circular or other shapes, and has an area that can be determined according to its shape. For example, the area of ​​a circular point area is π times the square of the radius. Alternatively, the area of ​​a square point area is the product of the lengths of adjacent sides, etc.

[0041] Figure 2 The ion receiving distribution pattern 112 in the wafer 111 may include an ion receiving portion 1121 located at the center of the surface of the wafer 111, and a sub-pattern including at least one ion receiving portion 1121 arranged in a ring around the center of the surface of the wafer 111. The ion receiving portion 1121 located at the center of the surface of the wafer 111, the first sub-pattern and the second sub-pattern are arranged in sequence from the center to the edge of the surface of the wafer 111. Figure 3 ,exist Figure 3In the example, the ion receiving part 1121 located at the center of the surface of the wafer 111 includes a first point area 1121a located at the center of the surface of the wafer 111, and the first sub-pattern includes a plurality of second point areas 1121b uniformly distributed around the center of the surface of the wafer 111, and 4 points are shown as an example. The second sub-pattern includes a plurality of third point areas 1121c uniformly distributed around the center of the surface of the wafer 111, and 4 points are shown as an example. As an example, each of the second point areas 1121b and a third point area 1121c can be arranged in a radial straight line, or can be changed in other embodiments.

[0042] In some embodiments, the Figure 2 , the number of ion receiving parts 1121 in the sub-pattern is positively correlated with the distance between the sub-pattern and the center of the surface of the wafer 111. That is, the closer to the edge of the surface of the wafer 111, the longer the perimeter and the larger the area, the more ion receiving parts 1121 are set to cover these areas, so as to achieve the purpose of more accurately collecting the ion density of each area on the surface of the wafer 111. Figure 4 The embodiment shown is different from the previous one in that the second sub-pattern includes an increased number of second dot areas 1121b, such as 8 second dot areas 1121b. The third sub-pattern includes a greater number of third dot areas 1121c than the second dot areas 1121b, such as 16 third dot areas 1121c.

[0043] For example Figure 5 As shown in FIG. 1 , except for the first dot area 1121a in the center, each of the remaining sub-patterns is implemented as a circular ring zone. Compared with the dot area structure, the ring zone can receive ions in a ring structure along the circumference of the surface of the wafer 111, so each ring zone can measure the ion density of a circumferential area of ​​the surface of the wafer 111 at one time. Figure 3 or Figure 4 In terms of the point area structure in the Figure 3 or Figure 4 The point area structure in the wafer 111 can obtain ion density information of each more subdivided area on the surface of the wafer 111, that is, the obtained ion density distribution information is richer.

[0044] As an example, in Figure 5 In the embodiment, three sub-patterns are shown, specifically, the third sub-pattern, the fourth sub-pattern and the fifth sub-pattern from the inside to the outside, the third sub-pattern includes the first annular zone 1121d, the fourth sub-pattern includes the second annular zone 1121e, and the fifth sub-pattern includes the third annular zone 1121f. It can be understood that in other embodiments, the number of annular zones can be increased or decreased and can be set according to needs.

[0045] For example Figure 6 As shown in Figure 5 A schematic diagram of the position change of the annular zone based on the embodiment. Figure 6 It can be seen that the density of the annular zone distribution is positively correlated with the distance from the center of the surface of the wafer 111. That is, the farther away from the center of the surface of the wafer 111, the longer the length of the annular zone is, and the larger the coverage area. However, since it is an integral annular conductor, only one ion density information is obtained through each annular zone. Therefore, the density of the annular zone distribution can be increased as the distance increases, for example, a fourth annular zone 1121g is added between the third annular zone 1121f and the second annular zone 1121e, etc., to obtain more ion density information.

[0046] like Figure 7 , which shows a connection diagram between the ion receiving portion 1121 and the electrical circuit 113 in the ion receiving component 110 in one embodiment of the present disclosure.

[0047] The plurality of electrical circuits 113 are disposed in the wafer 111 and are electrically connected to each of the ion receiving parts 1121. In some embodiments, the plurality of electrical circuits 113 may be arranged along the radial direction and / or thickness direction of the wafer 111. In some embodiments, one end of the plurality of electrical circuits 113 is electrically connected to the ion receiving part 1121, and the other end may extend out of the wafer 111 (or may be in the wafer 111) to be connected to the processing circuit component 120. In some embodiments, the portion of the plurality of electrical circuits 113 exposed from the wafer 111 may be covered with an insulating layer (not shown).

[0048] The processing circuit component 120 includes a signal acquisition unit 121. The signal acquisition unit 121 is connected to the plurality of electrical lines 113, and is used to acquire the current signal transmitted by each electrical line 113. The signal acquisition unit 121 includes a plurality of signal acquisition circuits 1211, which are connected to each electrical line 113 one by one, and are used to respectively acquire the current value of the electrical signal transmitted by each electrical line 113.

[0049] like Figure 8 , which shows a schematic diagram of the circuit principle of a signal acquisition circuit in an embodiment of the present disclosure.

[0050] The signal acquisition circuit 1211 includes: a resistor 12111 and a power supply 12112 connected in series to the electrical circuit 113, and an ion receiving part 1121 connected to the electrical circuit 113 is conductively connected to the ground terminal on the reaction chamber 200 through the plasma 300 to form a loop. Each ion receiving part 1121 has a corresponding loop. The power supply 12112 forms a current signal in the loop through the resistor 12111 in the loop and the resistor 12111 of the plasma 300 connected in series. As an example, the signal acquisition circuit 1211 also includes: a measuring unit 12113 for measuring the value of the electrical signal flowing through the loop. The measuring unit 12113 may include a voltage measuring device connected in parallel with the resistor 12111. The voltage U across the resistor 12111 is measured by the voltage measuring device, and then divided by the resistance value R of the resistor 12111, and the current value I=U / R of the current signal can be obtained. In another embodiment, the measuring unit 12113 may also include a current measuring device connected in series with the resistor 12111 , and the current measuring device may directly measure the current value I of the current signal in the loop.

[0051] Further, according to the current value and the area of ​​the corresponding ion receiving part 1121, the current density value of each ion receiving part 1121 can be calculated as the ion density information. Specifically, there are n ion receiving parts 1121, and the area is the same as S. According to the voltage / current signals collected by the n signal collection circuits 1211, the current values ​​I1~I n , the current density value M of each ion receiving part 1121 can be calculated k =I k / S, k∈[1, n], wherein the current density value is the “ion current density value”, and its magnitude can represent the magnitude of the ion density of the ion receiving part 1121 .

[0052] In some embodiments, if the number of ion receiving parts 1121 is small, the voltage measuring device of the measuring unit 12113 can be implemented as a voltmeter, or the current measuring device can be implemented as an ammeter to collect and display the voltage value (to further calculate the current value) or the current value. The user can calculate the current density value according to the reading of the voltmeter or ammeter of each signal acquisition circuit 1211. In other embodiments, if the number of ion receiving parts 1121 is large, the circuit component can also include a current density calculation unit, which is connected to the measuring unit 12113 to calculate the current density value according to the voltage value / current value measured by the measuring unit 12113. In some examples, the current density calculation unit may include a processor, such as a single-chip microcomputer, CPU, SoC, FPGA, etc., and the measuring unit 12113 of each signal acquisition circuit 1211 is connected to obtain the measured voltage value / current value and calculate each current density value accordingly. In some examples, the voltage measuring device can be implemented as a voltage acquisition circuit connected in parallel to the resistor 12111 or a current acquisition circuit connected in series to the resistor 12111. For example, the voltage acquisition circuit may include a voltage sampling resistor connected in parallel with both ends of the resistor 12111, and the resistance of the voltage sampling resistor may be much greater than the resistor 12111, so that the current flowing through the voltage sampling resistor is extremely small to negligible. The voltage sampling resistor is connected and outputs a voltage value U to the current density calculation unit, and the current density calculation unit calculates the current value I according to the known resistance 12111 values ​​R and U of the resistor 12111, and further calculates the current density value. In some examples, the current acquisition circuit may include a current sampling resistor connected in series with the resistor 12111, and the resistance of the current sampling resistor may be much smaller than the resistance R of the resistor 12111 to obtain a very small voltage value, and the current sampling resistor may be connected and output its voltage value to the current density calculation unit. Due to the series relationship, the current density calculation unit can obtain the current value I according to the voltage value at both ends of the current sampling resistor divided by its known resistance value, and further calculate the current density value.

[0053] In some embodiments, the power supply 12112 may be a direct current power supply 12112, and the output voltage value thereof is adjustable, for example, between -30 V and 30 V. The positive and negative output voltage values ​​of the power supply 12112 determine different directions of the current.

[0054] In some embodiments, the signal acquisition unit 121 is connected to the ion density calculation unit by wired communication, for example, by a conductive line, a wired interface, etc. The signal acquisition unit 121 and the ion density calculation unit can be placed in the reaction chamber 200 of the plasma process equipment together with the wafer 111. The ion density calculation unit can communicate wirelessly with the outside of the reaction chamber 200 to output the calculated current density values. As an example, the ion density calculation unit may include or be connected to a wireless communication module, such as Bluetooth, a wireless Ethernet module, a mobile communication module (3G / 4G / 5G), an Internet of Things module (Zigbee, NB-IOT or Lora, etc.). In other embodiments, the signal acquisition unit 121 is connected to the ion density calculation unit by wireless communication, the signal acquisition unit 121 is placed in the reaction chamber 200 together with the wafer 111, and the ion density calculation unit is placed outside the reaction chamber 200, so that the user can directly output the current density value through the ion density calculation unit. The above two methods can be selected according to the interference of the reaction chamber 200 environment to the signal transmitted by the above wireless communication connection. The wireless communication method does not need to set a line transmission port on the reaction chamber 200 where the internal vacuum needs to be guaranteed. In some other examples, the signal acquisition unit 121 and the ion density calculation unit are connected by wired communication. The signal acquisition unit 121 and the ion density calculation unit can be placed in the reaction chamber 200 of the plasma process equipment together with the wafer 111. The ion density calculation unit is connected to the outside through the vacuum interface on the reaction chamber 200 through a wired communication line, that is, all relatively reliable wired communication connections are used, and the transmission of current density values ​​can also be achieved.

[0055] like Fig. 9 As shown, in another embodiment of the present disclosure, a method for measuring ion density can be provided, which is applied to plasma process equipment. Fig. 9 The process of the method includes:

[0056] Step S801: placing the wafer 111 of the ion density detection device 100 in the reaction chamber 200 of a plasma process equipment.

[0057] In some embodiments, the wafer 111 can be placed on the stage 500 in the reaction chamber 200 in the same manner as a common wafer sample. As an example, the stage 500 can be implemented as a heater, or can include an electrostatic chuck.

[0058] Step S802 : when the plasma 300 is formed in the reaction chamber 200 , the current density value corresponding to each ion receiving part 1121 of the wafer 111 is obtained by the ion density detection device 100 .

[0059] In some embodiments, when the wafer 111 is placed in the reaction chamber 200, a plasma process device can be operated, and a process gas is introduced into the reaction chamber 200, and an RF source 400 applies an RF voltage to the coil 700 (used in ICP) or the electrode (used in CCP) to form an electromagnetic field acting on the process gas, thereby forming a plasma 300. The plasma 300 will process the surface of the wafer 111 on the carrier 500. The reaction chamber will be provided with a shielding cover 600 (ion filter), for example, located between the coil and the reaction chamber in the ICP process, and the ground terminal on the reaction chamber can be led out from the shielding cover 600.

[0060] During the plasma 300 treatment process, the ion density detection device 100 can be used to measure the current density value corresponding to the wafer 111 region where each ion receiving portion 1121 is located, so that the user can obtain the corresponding ion density information according to the current density value.

[0061] It should be particularly noted that the process or method represented by the flowchart of the above embodiment of the present disclosure can be understood as representing a module, fragment or part of a code including one or more sets of executable instructions configured to implement the steps of a specific logical function or process. And the scope of the preferred embodiment of the present disclosure includes other implementations, in which the functions may not be performed in the order shown or discussed, including performing the functions in a substantially simultaneous manner or in a reverse order according to the functions involved.

[0062] In some embodiments, the ion density calculation unit may be implemented based on a combination of software and hardware circuits, or purely hardware circuits.

[0063] like Fig.10 , which shows a schematic diagram of the structure of a computer device in one embodiment of the present disclosure.

[0064] The computer device 900 may be used to implement the ion density calculation unit in the above embodiments.

[0065] The computer device 900 includes a bus 901, a processor 902, and a memory 903. The processor 902 and the memory 903 can communicate with each other through the bus 901. The memory 903 can store a computer program or instruction. The processor 902 implements the functions of the ion density calculation unit in the previous embodiment by running the computer program or instruction in the memory 903, for example Fig. 9 .

[0066] The bus 901 may be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus, etc. The bus may be divided into an address bus, a data bus, a control bus, etc. For ease of representation, although only one thick line is used in the figure, it does not mean that there is only one bus or one type of bus.

[0067] In some embodiments, the processor 902 may be implemented as a central processing unit (CPU), a microprocessing unit (MCU), a system on chip (System On Chip), or a field programmable logic array (FPGA). The memory 903 may include a volatile memory (Volatile Memory) for temporary storage of data when running a program, such as a random access memory (Random Access Memory, RAM).

[0068] The memory 903 may also include a non-volatile memory (non-volatile memory) for data storage, such as a read-only memory (ROM), a flash memory, a hard disk drive (HDD), or a solid-state disk (SSD).

[0069] In some embodiments, the computer device 900 may further include a communicator 904. The communicator 904 is used to communicate with the outside. In a specific example, the communicator 904 may include one or a group of wired and / or wireless communication circuit modules. For example, the communicator 904 may include one or more of a wired network card, a USB module, a serial interface module, etc. The wireless communication protocols followed by the wireless communication module include: for example, near field communication (NFC) technology, infrared (IR) technology, Global System for Mobile communications (GSM), General Packet Radio Service (GPRS), Code Division Multiple Access (CDMA), Wideband Code Division Multiple Access (WCDMA), Time-Division Code Division Multiple Access (TD-SCDMA), Long Term Evolution (LTE), Bluetooth (BT), Global Navigation Satellite System (GNSS), etc. One or more.

[0070] In an embodiment of the present disclosure, a computer-readable storage medium may also be provided, storing a computer program or instruction, which, when executed, implements the functions of the ion density calculation unit in any of the previous embodiments.

[0071] That is, the method steps in the above embodiments are implemented as software or computer code that can be stored in a recording medium (such as a CD ROM, RAM, floppy disk, hard disk or magneto-optical disk), or are implemented as computer code originally stored in a remote recording medium or a non-temporary machine-readable medium downloaded via a network and to be stored in a local recording medium, so that the method represented herein can be stored in such software processing on a recording medium using a general-purpose computer, a dedicated processor, or programmable or dedicated hardware (such as an ASIC or FPGA).

[0072] In the embodiment of the present disclosure, a computer program product may be provided, one or more computer programs or instructions, which, when executed, fully or partially perform the functions of the ion density calculation unit in the embodiment of the present disclosure. The computer program product includes one or more computer programs or instructions.

[0073] The computer program or instructions may be stored in a readable storage medium or transmitted from one readable storage medium to another readable storage medium, for example, the computer program or instructions may be transmitted from one website, computer, server or data center to another website, computer, server or data center by wired or wireless means. The readable storage medium may be any available medium that can be accessed or a data storage device such as a server, data center, etc. that integrates one or more available media. The available medium may be a magnetic medium, such as a floppy disk, a hard disk, or a magnetic tape; it may also be an optical medium, such as a digital video disk; it may also be a semiconductor medium, such as a solid state drive. The computer readable storage medium may be a volatile or non-volatile storage medium, or may include both volatile and non-volatile types of storage media.

[0074] In other embodiments, the ion density calculation unit can also be implemented by an operator (such as addition, subtraction, multiplication, division, etc.) constructed with a hardware circuit that implements the above-mentioned current value and current density value calculation, in conjunction with a connected memory. The memory can store data such as the resistance value required for the calculation, the area of ​​the ion receiving part, etc. for reading.

[0075] In summary, the present disclosure relates to the technical field of integrated circuit manufacturing, and provides an ion density detection device and an ion density measurement method thereof. The device includes: an ion receiving component and a processing circuit component; the ion receiving component includes a wafer, an ion receiving distribution pattern distributed on the surface of the wafer, and an electrical circuit in the wafer, the ion receiving distribution pattern includes a plurality of ion receiving parts; a plurality of electrical circuits are electrically connected to each ion receiving part, respectively; the processing circuit component includes a signal acquisition unit and an ion density calculation unit, the signal acquisition unit connects a plurality of electrical circuits to obtain the current value corresponding to the loop of each electrical circuit; the ion density calculation unit can calculate the ion density information current density value representing each wafer surface area according to the area ratio of each current value to the corresponding ion receiving part, and can transmit it wirelessly. Thus, the current density value representing the ion density of each area on the wafer surface is obtained by using the wafer ion receiving distribution pattern, so as to achieve accurate and efficient measurement.

[0076] The above embodiments are merely illustrative of the principles and effects of the present disclosure, and are not intended to limit the present disclosure. Anyone familiar with the technology may modify or change the above embodiments without violating the spirit and scope of the present disclosure. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed in the present disclosure shall still be covered by the protection scope of the present disclosure.

Claims

1. An ion density detection device, characterized in that: Applied to plasma process equipment; The device comprises: An ion receiving component, comprising: a wafer, an ion receiving distribution pattern and a plurality of electrical circuits; the wafer is placed in a reaction chamber of the plasma process equipment; the ion receiving distribution pattern is formed on the surface of the wafer and comprises: a plurality of conductive ion receiving parts arranged in different areas of the wafer surface; wherein the ion receiving parts are in conductive contact with the plasma in the reaction chamber; the plurality of electrical circuits are arranged in the wafer and are electrically connected to each of the ion receiving parts respectively; the ion receiving distribution pattern comprises: an ion receiving part located at the center of the wafer surface, and a sub-pattern including at least one ion receiving part arranged in a ring around the center of the wafer surface; each of the ion receiving parts has an area that can be determined according to its shape; each of the sub-patterns is formed by an annular ion receiving part; the distribution density of the annular ion receiving parts is positively correlated with the distance relative to the center of the wafer surface; The processing circuit component includes: a signal acquisition unit connected to the plurality of electrical lines, the signal acquisition unit includes a plurality of signal acquisition circuits connected to each electrical line one by one, the signal acquisition circuit includes: a resistor and a power supply connected in series to the electrical line, connected to the ground terminal on the reaction chamber through the plasma to form a loop, and used to collect the electrical signal value in each loop to obtain the corresponding current value; the electrical signal value is used to calculate the current value of the current in the loop, and the current value is used to calculate the ratio between it and the area of ​​the corresponding ion receiving part to obtain the current density value of each ion receiving part as the ion density information of the wafer surface area where each ion receiving part is located; The signal acquisition circuit further comprises: a measuring unit for measuring the value of the electrical signal flowing through the loop; The processing circuit component further includes: an ion density calculation unit connected to each of the measuring units to calculate each of the current density values; The signal acquisition unit and the ion density calculation unit are connected by wired communication, the signal acquisition unit and the ion density calculation unit are placed together with the wafer in the reaction chamber of the plasma process equipment, and the ion density calculation unit is connected to the external wireless communication; or, the signal acquisition unit and the ion density calculation unit are connected by wireless communication, the signal acquisition unit and the wafer are placed in the reaction chamber, and the ion density calculation unit is placed outside the reaction chamber.

2. The ion density detection device according to claim 1, characterized in that: The measuring unit includes: a current measuring device connected in series with the resistor or a voltage measuring device connected in parallel with the resistor.

3. A method for measuring ion density, applied to plasma process equipment, comprising: Arrange a wafer of the ion density detection device according to any one of claims 1 to 2 in a reaction chamber of a plasma process equipment; When plasma is formed in the reaction chamber, the current density value corresponding to each ion receiving part of the wafer is obtained by the ion density detection device.

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