A miniaturized reconfigurable radome unit and DC feed network

Abstract

The present invention discloses a miniaturized, reconfigurable radome unit and a DC feed network. The radome unit comprises: an upper resonator, an intermediate inductor layer, and a lower resonator, connected sequentially from top to bottom; the lower and upper resonators are symmetrically arranged with the intermediate inductor layer as the center of symmetry, and then orthogonally arranged; and further comprises switching diodes, at least two of which are disposed in the upper and lower resonators, respectively. The present invention allows for the arrangement of more units within a limited space, achieving miniaturization of the radome, improving angular stability and delaying grating lobes, while also enhancing the passband and stopband characteristics of the radome unit through multi-layer cascading.

Description

Technical Field

[0001] The present invention relates to the technical field of electromagnetic fields and microwave technologies, and in particular to a miniaturized reconfigurable antenna cover unit and a DC feed network. Background Art

[0002] The radome is an important component of aircraft radar. The radome based on the frequency selective surface (FSS) is a two-dimensional periodic structure composed of a large number of identical units. It can frequency-select electromagnetic waves with different operating frequencies, polarization states, and incident angles. The FSS loaded with a switching diode switches its working state according to the working condition of the internal antenna. When the antenna is working, it is in the passband, which does not affect normal communication and reduces the out-of-band radar scattering cross-section. When the antenna is not working, it switches to the stopband, improving the stealth capability of the antenna system.

[0003] The unit structure of a traditional FSS can be a metal patch, a metal aperture, or various combinations of the two. However, traditional FSS usually has a narrow operating frequency band and poor edge steepness, which affects the working performance of the antenna cover. By introducing LC series resonance and a multi-layer cascade structure, multiple transmission poles can be introduced in the passband to improve the passband flatness, and transmission zeros can be introduced at the passband edge to achieve out-of-band suppression. In 2020, Tao Hong and other scholars designed a bandpass cascade structure FSS with an ultra-wideband sideband steep drop. It mainly relies on the bending of the inductor layer to generate a wide passband, and the cascaded circular iron sheets achieve higher out-of-band suppression.

[0004] The reconfigurable FSS can realize the functions of adjustable resonant frequency or adjustable working state. The adjustable resonant frequency is mainly achieved by loading a varactor diode and changing the DC bias voltage, and the adjustable working state is mainly achieved by loading a PIN diode and a varactor diode.

[0005] In previous studies, grating lobes appeared on the frequency selective surface, resulting in multiple passbands and multiple stopbands. At the same time, high-frequency suppression cannot be achieved during low-frequency passbands due to high-order resonance. In 2020, Hanxuan Li and others designed a 3D-structured broadband bandpass FSS based on a stepped impedance slot resonator, which can form six transmission poles in the operating frequency band. Compared with the multi-layer cascade structure, this structure can achieve a higher-order bandpass filter response, a flatter passband and steeper sidebands. However, the problem with the 3D structure is that the unit thickness is large, the structure is complex and difficult to process, and it is difficult to achieve dual polarization in some structures.

[0006] It can be seen that loading a switching diode to simultaneously achieve dual polarization and a miniaturized, highly selective frequency selective surface-based radome with switchable pass / stop bands still poses great challenges.

[0007] In the prior art, patent publication number CN111180895A discloses a tunable, high-gating, absorbent-transmitter integrated material. By introducing a parallel LC structure into the equivalent circuit of the impedance layer within a periodic structure, the equivalent filter zero point is adjusted to achieve high gating characteristics for specific frequencies. Furthermore, the resonant frequency is adjusted by varying the capacitance of the varactor diode, thereby achieving tunable transmission frequency characteristics. Since only a single varactor diode is used in the unit structure, the introduced parasitic resistance is small, resulting in low insertion loss. Simultaneously, the frequency-selective surface layer utilizes a mechanical tuning structure, achieving tunable transmission frequency while avoiding the introduction of additional parasitic resistance to reduce insertion loss. However, harmonic generation cannot be suppressed at high frequencies, and further reduction of the unit period is still necessary to achieve miniaturization. Summary of the Invention

[0008] The technical problem to be solved by the present invention is to solve the problem that the existing antenna cover cannot realize dual polarization and switch the pass / stop band.

[0009] In order to solve the above technical problems, the present invention provides the following technical solutions:

[0010] A miniaturized reconfigurable antenna cover unit includes: an upper resonator 10, an intermediate inductor layer 20, and a lower resonator 30 connected in sequence from top to bottom; wherein the lower resonator 30 and the upper resonator 10 are symmetrically arranged with the intermediate inductor layer 20 as the center of symmetry, and then orthogonally arranged; and also includes a switching diode 40; at least two switching diodes 40 are respectively arranged in the upper resonator 10 and the lower resonator 30.

[0011] In one embodiment of the present invention, the upper resonator 10 includes a first upper interdigital capacitor metal layer 11, a first dielectric layer 12, and a second upper interdigital capacitor metal layer 13, which are arranged in sequence from top to bottom; wherein the first upper interdigital capacitor metal layer 11 and the second upper interdigital capacitor metal layer 13 are arranged orthogonally and parallel.

[0012] In one embodiment of the present invention, the at least two switching diodes 40 include a first switching diode 41 ; the first switching diode 41 is disposed at a capacitor interdigital position of the first upper interdigital capacitor metal layer 11 .

[0013] In one embodiment of the present invention, when the first switch diode 41 is turned on, the parasitic inductance of the first switch diode 41 is connected in parallel with the interdigital capacitor in the first upper interdigital capacitor metal layer 11 .

[0014] In one embodiment of the present invention, the lower resonator 30 includes a first lower interdigital capacitor metal layer 31, a second dielectric layer 32, and a second lower interdigital capacitor metal layer 33, which are arranged in sequence from top to bottom; wherein the first lower interdigital capacitor metal layer 31 and the second lower interdigital capacitor metal layer 33 are arranged orthogonally and parallel.

[0015] In one embodiment of the present invention, the at least two switching diodes 40 include a second switching diode 42 ; the second switching diode 42 is disposed at a capacitor interdigital position of the second lower interdigital capacitor metal layer 33 .

[0016] In one embodiment of the present invention, when the second switch diode 42 is turned on, the parasitic inductance of the second switch diode 42 is connected in parallel with the interdigital capacitor in the second lower interdigital capacitor metal layer 33 .

[0017] In one embodiment of the present invention, the miniaturized reconfigurable radome includes a third dielectric layer 51 and a fourth dielectric layer 52 ; the third dielectric layer 51 is located between the upper resonator 10 and the middle inductor layer 20 ; and the fourth dielectric layer 52 is located between the middle inductor layer 20 and the lower resonator 30 .

[0018] The present invention also provides a DC feed network, which is applied to the above-mentioned miniaturized reconfigurable radome; comprising a plurality of miniaturized reconfigurable radome units, a first terminal and a second terminal; wherein,

[0019] Multiple miniaturized reconfigurable radome units are arrayed to form a radome array;

[0020] Connect the anodes of all the switching diodes 40 in the upper resonators 10 in the radome array to the first terminal and the cathodes to the second terminal;

[0021] The anodes of all the switching diodes 40 in the lower resonators 30 in the radome array are connected to the second terminal, and the cathodes are connected to the first terminal.

[0022] In one embodiment of the present invention, when the first terminal is connected to a power source and the second terminal is grounded, the switching diode 40 in the upper resonator 10 is turned on;

[0023] When the first terminal is grounded and the second terminal is connected to the power supply, the switching diode 40 in the lower resonator 30 is turned on.

[0024] Compared with the prior art, the beneficial effects of the present invention are: the two resonators are arranged in a layered cascade, and an interdigital capacitor plate is provided, so that the capacitance value is increased without increasing the integration alone, harmonics can be eliminated at high frequencies and miniaturization can be achieved, and switching diodes are provided on both resonators, so that miniaturization can be achieved while controlling the dual polarization of electromagnetic waves during operation. When the switching diode is disconnected, the passband is flat, the sideband is steep, and no high-order resonance occurs outside the band within a wide frequency band. The wave transmittance reaches more than 70%, achieving good passband performance. The suppression characteristics after reconstruction are greater than 20db, and it has a high electromagnetic shielding effect on electromagnetic waves.

[0025] The antenna cover structure of the present invention introduces interdigital and parallel plate capacitor technology to reduce the size of the antenna cover unit, and more units can be arranged in a limited space, thereby realizing the miniaturization of the antenna cover, improving the angle stability and delaying the grating lobe. At the same time, the multi-layer cascade improves the passband and stopband characteristics of the antenna cover unit, that is, it has a highly selective bandpass filtering response in the passband state and has a better electromagnetic shielding effect on electromagnetic waves when in the stopband.

[0026] The antenna cover of the present invention is loaded with mutually orthogonally placed switching diodes at the top and bottom interdigital capacitor positions, respectively, which realizes dual polarization while also improving the reconfigurable performance of the antenna cover. In the two states of the PIN tube, passband and stopband conversion can be achieved within 1-18GHz, and no high-order resonance occurs in both states. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 Schematic diagram of a miniaturized reconfigurable radome unit according to an embodiment of the present invention.

[0028] Figure 2 FIG. 4 is a schematic diagram of an intermediate inductor layer according to an embodiment of the present invention.

[0029] Figure 3 Schematic diagram of interdigital capacitor plates according to an embodiment of the present invention.

[0030] Figure 4 This is a schematic diagram of the equivalent circuit of a miniaturized reconfigurable radome unit according to an embodiment of the present invention.

[0031] Figure 5 Schematic diagram of S11 and S21 of the antenna cover unit according to an embodiment of the present invention when the switching diode is cut off and the incident light is vertical.

[0032] Figure 6 Schematic diagram of S11 and S21 of the antenna cover unit according to an embodiment of the present invention when the switching diode is turned on and the incident light is vertical.

[0033] Figure 7 This is a schematic diagram of S21 of the antenna cover unit according to an embodiment of the present invention when the switching diode is cut off and incident at different angles.

[0034] Figure 8 This is a schematic diagram of S21 of the antenna cover unit according to an embodiment of the present invention when the switching diode is turned on and incident at different angles.

[0035] Figure 9 A schematic diagram of a DC feeding network according to an embodiment of the present invention. DETAILED DESCRIPTION

[0036] To facilitate those skilled in the art to understand the technical solution of the present invention, the technical solution of the present invention is further described with reference to the accompanying drawings.

[0037] The terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature specified as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, "plurality" means two or more, unless otherwise specifically defined.

[0038] Example 1

[0039] See also Figure 1 As shown, the present invention provides a miniaturized reconfigurable antenna cover unit, comprising an upper resonator 10, an intermediate inductor layer 20, and a lower resonator 30 connected sequentially from top to bottom. The lower resonator 30 and the upper resonator 10 are symmetrically arranged with the intermediate inductor layer 20 as the center of symmetry, and then rotated 90° to be orthogonal. The unit also includes a switching diode 40, at least two of which are arranged in the upper resonator 10 and the lower resonator 30, respectively, and the two switching diodes 40 are placed orthogonally. The placement and connection method of the upper resonator 10, the lower resonator 30, and the switching diode 40, according to equivalent circuit theory, increases the equivalent capacitance value of the series LC structure, improves the OFF-state out-of-band characteristics and ON-state shielding characteristics of the switching diode 40, and at the same time greatly reduces the unit size of the antenna cover and improves the incident angle stability of the FSS.

[0040] In one embodiment of the present invention, the upper resonator 10 includes, arranged from top to bottom, a first upper interdigital capacitor metal layer 11, a first dielectric layer 12, and a second upper interdigital capacitor metal layer 13. The first upper interdigital capacitor metal layer 11 and the second upper interdigital capacitor metal layer 13 are arranged orthogonally and parallel to each other, which can increase the capacitance value.

[0041] See also Figure 2 As shown, in one embodiment of the invention, the middle inductor layer 20 is a grid structure arranged in a "cross" shape, wherein the grid width of the middle inductor layer 20 is 1.7 mm and the grid length is 6 mm.

[0042] In one embodiment of the invention, the lower resonator 30 includes a first lower interdigital capacitor metal layer 31, a second dielectric layer 32, and a second lower interdigital capacitor metal layer 33, which are arranged in sequence from top to bottom. The first lower interdigital capacitor metal layer 31 and the second lower interdigital capacitor metal layer 33 are arranged orthogonally and parallel to increase the capacitance value.

[0043] In this embodiment, the structures of the first upper interdigital capacitor metal layer 11, the second upper interdigital capacitor metal layer 13, the first lower interdigital capacitor metal layer 31 and the second lower interdigital capacitor metal layer 33 are the same, except for the different locations and methods of arrangement. Furthermore, the four interdigital capacitor metal layers are mainly interdigital capacitor plates. In the design of the interdigital capacitor plate, a simulation scan is performed in electromagnetic simulation software. Based on the scan results, the width of the interdigital capacitor plate is set to 5.6 mm. The width of each interdigital capacitor in the interdigital capacitor plate is 0.1 mm, the length is 0.95 mm, and they are periodically arranged with a gap of 0.1 mm. At this time, the antenna cover can meet the requirements of high-order harmonic suppression while the low-frequency passband and stopband are reconfigurable. See the attached figure. Figure 3 shown.

[0044] In this embodiment, the at least two switching diodes 40 include a first switching diode 41 and a second switching diode 42. The first switching diode 41 is disposed at a capacitor interdigital position of the first upper interdigital capacitor metal layer 11, and the second switching diode 42 is disposed at a capacitor interdigital position of the second lower interdigital capacitor metal layer 33.

[0045] In this embodiment, the interdigital capacitor positions of the first upper interdigital capacitor metal layer 11 and the second lower interdigital capacitor metal layer 33 are both loaded with diodes PIN switch diodes 40, and the first switch diode 41 and the second switch diode 42 are placed orthogonally to control the dual polarization of electromagnetic waves under different bias voltages.

[0046] See also Figure 1 As shown, in one embodiment of the present invention, the miniaturized reconfigurable radome unit further includes a third dielectric layer 51 and a fourth dielectric layer 52. The third dielectric layer 51 is located between the upper resonator 10 and the middle inductor layer 20, and the fourth dielectric layer 52 is located between the middle inductor layer 20 and the lower resonator 30.

[0047] In this embodiment, the first dielectric layer 12, the second dielectric layer 32, the third dielectric layer 51, and the fourth dielectric layer 52 are all made of F4B sheet material with a relative dielectric constant of 2.65. The first dielectric layer 12 and the second dielectric layer 32 have the same dimensions, and the third dielectric layer 51 and the fourth dielectric layer 52 have the same dimensions. Furthermore, the thickness of the third dielectric layer 51 and the fourth dielectric layer 52 is greater than that of the first dielectric layer 12 and the second dielectric layer 32. More specifically, the thickness of the third dielectric layer 51 and the fourth dielectric layer 52 is 3.3 mm, while the thickness of the first dielectric layer 12 and the second dielectric layer 32 is 0.1 mm.

[0048] See also Figure 4Figure 2 shows the equivalent circuit of a reconfigurable radome unit designed based on a second-order bandpass filter circuit prototype for vertical TE wave incidence. The circuit includes capacitors C10, C30, inductors L10, L20, and L30, a switching diode PIN, its parasitic inductance La, and resistors Z51, Z52, Z53, and Z54. Capacitor C10 and inductor L10 are connected in series, and the switching diode PIN and parasitic inductance La are connected in series and then in parallel with capacitor C10. Capacitor C30 and inductor L30 are connected in series, and inductor L20 is connected in parallel with the series connection of capacitor C10 and inductor L10, and capacitor C30 and inductor L30, respectively. Both ends of the resistor Z51 are connected to the capacitor C10 and the inductor L20, both ends of the resistor Z52 are connected to the inductor L20 and the capacitor C30, both ends of the resistor Z53 are connected to the inductor L10 and the inductor L20, and both ends of the resistor Z54 are connected to the inductor L20 and the inductor L30.

[0049] The upper resonator 10 is equivalent to a series structure of capacitor C10 and inductor L10, while the lower resonator 30 is equivalent to a series structure of capacitor C30 and inductor L30. Furthermore, the third dielectric layer 51 makes resistors Z51 and Z53 equivalent to a transmission line with a specific impedance, while the fourth dielectric layer 52 makes resistors Z52 and Z54 equivalent to a transmission line with a specific impedance. The middle inductor layer 20 is equivalent to inductor L20. The switching diode 40 is equivalent to a switching diode PIN.

[0050] Among them, under vertical incidence of TE waves, when the switching diode PIN tube is turned on, a parasitic inductance La is generated in parallel with the capacitor layer. Since the structure of the first upper interdigital capacitor metal layer 11 changes, it works in a different frequency band from the second lower interdigital capacitor metal layer 33. After being cascaded through the intermediate inductor layer 20, the overall structure cannot achieve passband, and the pass / stop band can be reconfigured.

[0051] More specifically, the MADP-000907-14020W switching diode is used for the PIN switching diode. In the forward-biased state (i.e., when conducting), the PIN switching diode is equivalent to a 7.8Ω resistor and a 30pH inductor (i.e., parasitic inductance La) in series. In the reverse-biased state (i.e., when off), the PIN switching diode is equivalent to a 25fF capacitor and a 30pH inductor (i.e., parasitic inductance La) in series. By loading the PIN switching diode into conduction, the filtering state of a particular layer can be changed, destroying the high-order passband response and achieving passband / stopband switching.

[0052] In this embodiment, in the prior art, the series structure of capacitor C10 and inductor L10 is processed into a layer structure, and the series structure of capacitor C30 and inductor L30 is processed into a layer structure, while the present application is a hierarchical cascade structure, in which the series structure of capacitor C10 and inductor L10 is processed into a first upper interdigital capacitor metal layer 11, a first dielectric layer 12, and a second upper interdigital capacitor metal layer 13 arranged in sequence from top to bottom, and the series structure of capacitor C30 and inductor L30 is processed into a first lower interdigital capacitor metal layer 31, a second dielectric layer 32, and a second lower interdigital capacitor metal layer 33 arranged in sequence from top to bottom. The hierarchical cascade can set the capacitor plate as an interdigital capacitor plate, that is, increase the capacitance value, eliminate harmonics at the resonant high frequency, and do not increase the thickness of the integrated circuit, thereby achieving miniaturization. And the first upper interdigital capacitor metal layer 11

[0053] Similarly, the first lower interdigital capacitor metal layer 31 and the second lower interdigital capacitor metal layer 33 are arranged orthogonally to further increase the capacitance value.

[0054] please Figures 5 to 8 The figure shows the S parameters of the designed miniaturized reconfigurable antenna cover simulated using the electromagnetic simulation software CST. Since the S21 parameter is less than -20dB within the operating frequency band when the structure is in the reflection state (stopband), and the S11 parameter is less than -10dB within the operating frequency band of 2-2.5GHz when it is in the transmission state (passband), and no high-order resonance occurs, the relevant curves are listed in the figure. Note: S parameters are scattering parameters, which are important parameters in microwave transmission. They include S12 parameters, S21 parameters, S11 parameters, and S22 parameters. Among them, the S12 parameter is the reverse transmission coefficient, that is, isolation. The S21 parameter is the forward transmission coefficient, that is, gain. The S11 parameter is the input reflection coefficient, that is, input return loss, and the S22 parameter is the output reflection coefficient, that is, output return loss.

[0055] See also Figure 5 The S11 and S21 plots for the PIN switching diode in the off state with a TE-polarized wave incident perpendicularly are shown. From 2 to 2.5 GHz, S21 is less than -10 dB, and the transmittance is greater than 70%. No high-order resonances occur outside the band across a wide frequency range, delaying the occurrence of grating lobes.

[0056] Figure 6 Figure 2 shows the S11 and S21 plots for a TE-polarized wave incident perpendicularly on the PIN switching diode in the on-state. It can be seen that S21 remains below -20 dB across a wide bandwidth, demonstrating excellent stopband performance.

[0057] Figure 7The following are S21 plots of the PIN switching diode in the off state for TE-polarized waves incident at different angles. For angles of incidence of 0°, 20°, 40°, and 60°, the 0dB range at 0° is 2.1GHz-2.45GHz; at 20°, it is 2.12GHz-2.57GHz; at 40°, it is 2.07GHz-2.57GHz; and at 60°, it is 2.05GHz-2.58GHz. This demonstrates the excellent angular stability of the radome.

[0058] Figure 8 The following is an S21 plot of the TE-polarized wave incident at different angles when the switching diode is in the PIN conduction state. It can be seen that the transmission coefficient is less than -20 dB across a wide frequency band at angles of incidence of 0°, 20°, 40°, and 60°. This indicates that the radome has excellent reflectivity, enhancing its stealth against electromagnetic waves.

[0059] Example 2

[0060] Before the actual processing of the radome, we also need to design a DC feed network for its array. Designing a DC feed network means ensuring that each switching diode PIN can effectively turn on and off when the bias voltage changes in an appropriate way. At the same time, it is necessary to combine the structural characteristics of the radome itself and simplify the bias network as much as possible to minimize the impact on the RFSS characteristics. In combination with the structure of this design, the DC feed network bias circuit is as follows Figure 9 shown.

[0061] See also Figure 1 and Figure 9 As shown, the present invention also provides a DC feed network, applicable to Example 1, comprising multiple miniaturized reconfigurable radomes, a first terminal, and a second terminal. The multiple miniaturized reconfigurable radomes are arrayed to form a radome array. In the radome array, the positive electrodes of all switching diodes 40 located in the upper resonators 10 are connected to the first terminal, and the negative electrodes are connected to the second terminal. In the radome array, the positive electrodes of all switching diodes 40 located in the lower resonators 30 are connected to the second terminal, and the negative electrodes are connected to the first terminal.

[0062] In this embodiment, when the first terminal is connected to the power supply and the second terminal is grounded, the switching diode 40 in the upper resonator 10 is turned on. When the first terminal is grounded and the second terminal is connected to the power supply, the switching diode 40 in the lower resonator 30 is turned on.

[0063] Specific combination Figure 3To illustrate, when the left side of the first upper interdigital capacitor metal layer 11 is grounded and the right side is connected to the power supply, the upper side of the second lower interdigital capacitor metal layer 33 rotated 90 ° counterclockwise is connected to the power supply and the lower side is connected to the ground, that is, feeding in series along the placement direction of the switching diode 40, the interdigital capacitor position of the first upper interdigital capacitor metal layer 11 and the second lower interdigital capacitor metal layer 33 is loaded with the switching diode 40 and will be designed with its bias circuit integration, independently realizing dual polarization on-off control. This feeding mode will make the components on the upper layer effectively turned on and the bottom layer components disconnected, realizing the polarization of the electromagnetic wave. By exchanging the power supply and the ground, the bottom layer components can be effectively turned on and the upper layer disconnected, realizing the y polarization of the electromagnetic wave.

[0064] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above and that the invention can be embodied in other specific forms without departing from the spirit or essential characteristics of the invention. Therefore, the embodiments should be considered in all respects as illustrative and non-restrictive, and the scope of the invention is defined by the appended claims rather than the foregoing description. It is intended that all variations within the meaning and range of equivalents of the claims be embraced herein, and any reference signs in the claims should not be construed as limiting the claims to which they relate.

[0065] The above-mentioned embodiments merely represent the implementation methods of the invention. The protection scope of the present invention is not limited to the above-mentioned embodiments. For those skilled in the art, several variations and improvements can be made without departing from the concept of the present invention, which all fall within the protection scope of the present invention.

Claims

1. A miniaturized reconfigurable radome unit, characterized in that: include: An upper resonator (10), an intermediate inductor layer (20), and a lower resonator (30) are sequentially connected from top to bottom; wherein the lower resonator (30) and the upper resonator (10) are symmetrically arranged with the intermediate inductor layer (20) as the symmetry center and then orthogonally arranged; and further comprising a switching diode (40); at least two switching diodes (40) are respectively arranged in the upper resonator (10) and the lower resonator (30); wherein the lower resonator (30) comprises a first lower interdigital capacitor metal layer (31), a second dielectric layer (32), and a second lower interdigital capacitor metal layer (33) sequentially arranged from top to bottom; wherein the first lower interdigital capacitor metal layer (31) and the second lower interdigital capacitor metal layer (33) are orthogonally and parallelly arranged.

2. The miniaturized reconfigurable radome unit according to claim 1, characterized in that: The upper resonator (10) comprises a first upper interdigital capacitor metal layer (11), a first dielectric layer (12) and a second upper interdigital capacitor metal layer (13) which are arranged in sequence from top to bottom; wherein the first upper interdigital capacitor metal layer (11) and the second upper interdigital capacitor metal layer (13) are arranged orthogonally and in parallel.

3. The miniaturized reconfigurable radome unit according to claim 2, characterized in that: The at least two switching diodes (40) include a first switching diode (41); the first switching diode (41) is arranged at a capacitor interdigital position of a first upper interdigital capacitor metal layer (11).

4. The miniaturized reconfigurable radome unit according to claim 3, characterized in that: When the first switching diode (41) is turned on, the parasitic inductance of the first switching diode (41) is connected in parallel with the interdigital capacitance in the first upper interdigital capacitance metal layer (11).

5. The miniaturized reconfigurable radome unit according to claim 1, wherein: The at least two switching diodes (40) include a second switching diode (42); the second switching diode (42) is arranged at a capacitor interdigital position of the second lower interdigital capacitor metal layer (33).

6. The miniaturized reconfigurable radome unit according to claim 5, characterized in that: When the second switch diode (42) is turned on, the parasitic inductance of the second switch diode (42) is connected in parallel with the interdigital capacitance in the second lower interdigital capacitance metal layer (33).

7. The miniaturized reconfigurable radome unit according to claim 1, wherein: The miniaturized reconfigurable radome comprises a third dielectric layer (51) and a fourth dielectric layer (52); the third dielectric layer (51) is located between an upper resonator (10) and an intermediate inductor layer (20); and the fourth dielectric layer (52) is located between the intermediate inductor layer (20) and the lower resonator (30).

8. A DC feed network, characterized in that: The miniaturized reconfigurable radome unit applied to any one of claims 1 to 7 comprises a plurality of miniaturized reconfigurable radomes, a first terminal and a second terminal; wherein, Multiple miniaturized reconfigurable radome units are arrayed to form a radome array; Connecting the positive electrodes of all the switching diodes (40) located in the upper resonators (10) in the antenna cover array to the first terminal and the negative electrodes to the second terminal; The positive electrodes of all the switching diodes (40) located in the lower layer resonators (30) in the antenna cover array are connected to the second connection terminal, and the negative electrodes are connected to the first connection terminal.

9. The DC feed network according to claim 8, characterized in that: When the first terminal is connected to a power source and the second terminal is grounded, the switching diode (40) in the upper resonator (10) is turned on; When the first terminal is grounded and the second terminal is connected to a power source, the switching diode (40) in the lower resonator (30) is turned on.

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