A wave-absorbing energy selective protection device

Abstract

This application belongs to the field of electromagnetic protection technology and relates to a wave-absorbing energy selective protection device, comprising: a dielectric substrate, a microstrip line disposed on the top of the dielectric substrate, and a ground plane disposed at the bottom of the dielectric substrate; the microstrip line includes: a first microstrip stub and a second microstrip stub; the two ends of the first microstrip stub are respectively connected to an input port and an output port, the middle part of the first microstrip stub is connected to a branch section through a diode, and the branch section is connected to the ground plane; one end of the second microstrip stub is connected to the middle part of the first microstrip stub through a diode, and the other end of the second microstrip stub is connected to a matched load port; the microstrip line further includes: a terminating short-circuit stub; one end of the terminating short-circuit stub is connected to the ground plane, and the other end is connected to the other end of the second microstrip stub. Using this application, strong electromagnetic protection can be achieved by absorbing waves, reducing the radar cross-section.

Description

Technical Field

[0001] This application relates to the field of electromagnetic protection technology, and in particular to an absorbing energy selective protection device. Background Technology

[0002] With the advancement of information and electronic technology and the increasing popularity of wireless communication technology, antennas, as the core component of wireless communication systems, play a vital role, mainly responsible for transmitting electromagnetic wave signals into space or receiving signals from space and transmitting them to the system.

[0003] However, with the proliferation of electronic devices and their significant performance improvements, the electromagnetic environment has become increasingly complex. This leads to interference between these devices through media such as antennas, affecting not only their normal operation but also posing challenges to their performance. In particular, strong electromagnetic radiation fields pose a serious threat to the resilience and efficiency of electronic devices. Therefore, in practical applications, it is essential to prioritize enhancing the ability of electronic devices to withstand electromagnetic interference and damage in complex electromagnetic environments.

[0004] In the prior art, electromagnetic protection devices applied to the radio frequency channel of electronic devices use an adaptive protection design with low energy transmission and high energy reflection to reflect and isolate high-energy electromagnetic signals, thereby protecting sensitive electronic components at the back end of the receiving channel.

[0005] However, the reflected high-energy electromagnetic waves can be re-emitted by the antenna, thus increasing the radar cross-section of the electronic device. In transceiver-equipped electronic devices, the reflected high-energy electromagnetic waves can also enter the transmission link of the electronic device through transceiver switches or circulators, posing a potential electromagnetic damage threat to the electronic components in the transmission link. Summary of the Invention

[0006] Therefore, it is necessary to provide an absorbing energy selective protection device to address the above-mentioned technical problems, which can achieve strong electromagnetic protection by absorbing waves and reduce the radar cross-section.

[0007] An absorbing energy selective protection device includes: a dielectric substrate, a microstrip line disposed on top of the dielectric substrate, and a ground plane disposed at the bottom of the dielectric substrate;

[0008] The microstrip line includes: a first microstrip branch and a second microstrip branch;

[0009] The two ends of the first microstrip stub are connected to the input port and the output port, respectively. The middle part of the first microstrip stub is connected to the branch section through a diode. The branch section is connected to the ground plane.

[0010] One end of the second microstrip stub is connected to the middle of the first microstrip stub via a diode, and the other end of the second microstrip stub is connected to the matching load port.

[0011] In one embodiment, the microstrip line further includes: a terminal short-circuit stub;

[0012] One end of the terminal short-circuit stub is connected to the floor, and the other end is connected to the other end of the second microstrip stub.

[0013] In one embodiment, the first microstrip stub, the second microstrip stub, and the terminal short-circuit stub are all strip-shaped structures with equal widths.

[0014] In one embodiment, the terminal short-circuit stub includes two spliced ​​segments to form an "L"-shaped structure, and the terminal short-circuit stub is located between the first microstrip stub and the second microstrip stub.

[0015] In one embodiment, there are two branches, which are symmetrically arranged on both sides of the first microstrip branch and connected to the second microstrip branch through a diode.

[0016] In one embodiment, both the first microstrip branch and the branch are rectangular structures, and the width of the first microstrip branch is equal to the length of the branch.

[0017] In one embodiment, the second microstrip branch includes four sequentially connected segments, each segment being a strip structure, and adjacent segments being arranged perpendicular to each other, so that the second microstrip branch undergoes three bends and forms three right-angle structures.

[0018] In one embodiment, on the second microstrip branch, each right-angled structure has a chamfered outer corner, and the radius of the chamfered structure is equal to the width of the second microstrip branch.

[0019] In one embodiment, along the direction toward the matched load port, the direction of the first bend on the second microstrip stub is opposite to the direction of the second and third bends.

[0020] In one embodiment, the distance between the diodes connected to the second microstrip stub and the diodes connected to the stub on the first microstrip stub is determined by the center frequency of the operating frequency band.

[0021] The aforementioned microwave-absorbing energy selective protection device connects a first microstrip stub to a grounded stub with a loading diode. Simultaneously, a loading diode connects the first microstrip stub to a second microstrip stub connected to a matching load port. By adaptively sensing the strength of the transmitted signal in the microstrip line, the diode is controlled to be either in a cutoff or conduction state. Utilizing the diode's adaptive conduction capability under high-energy signal conditions, microwave-absorbing energy selective protection of the microstrip transmission channel is achieved. This device can replace existing microstrip lines, enabling adaptive electromagnetic protection through microwave absorption while transmitting signals, preventing the re-emission of reflected signals, reducing the radar cross-section, and making it particularly suitable for microwave device design. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of a microwave-absorbing energy selective protection device in one embodiment;

[0023] Figure 2 This is a reflection coefficient diagram of the input port of an absorbing energy selective protection device in one embodiment when a low-energy signal is input;

[0024] Figure 3 This is a transmission coefficient diagram from the input port to the output port of an absorbing energy selective protection device in one embodiment when a low-energy signal is input.

[0025] Figure 4 This is a transmission coefficient diagram from the input port to the matched load port of an absorbing energy selective protection device in one embodiment when a low energy signal is input.

[0026] Figure 5 This is a reflection coefficient diagram of the input port of an absorbing energy selective shielding device in one embodiment when a high-energy signal is incident.

[0027] Figure 6 This is a transmission coefficient diagram from the input port to the output port of an absorbing energy selective protection device in one embodiment when a high-energy signal is input;

[0028] Figure 7 This is a transmission coefficient diagram from the input port to the matched load port of an absorbing energy selective protection device in one embodiment when a high-energy signal is input.

[0029] Figure label:

[0030] Medium plate 1;

[0031] Microstrip line 2, first microstrip stub 21, second microstrip stub 22, terminal short-circuit stub 23, branch stub 24, additional stub 25;

[0032] Diode 3;

[0033] Metallized through hole 4;

[0034] Input port A, output port B, and matching load port C. Detailed Implementation

[0035] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application. All other embodiments obtained by those skilled in the art based on the embodiments in this application without inventive effort are within the scope of protection of this application.

[0036] It should be noted that all directional indicators (such as up, down, left, right, front, back, etc.) in the embodiments of this application are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indicator will also change accordingly.

[0037] Furthermore, the use of terms such as "first" and "second" in this application is for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of those features. In the description of this application, "multiple sets" means at least two sets, such as two sets, three sets, etc., unless otherwise explicitly specified.

[0038] In this application, unless otherwise expressly specified and limited, the terms "connection," "fixed," etc., should be interpreted broadly. For example, "fixed" can mean a fixed connection, a detachable connection, or an integral part; it can mean a mechanical connection, an electrical connection, a physical connection, or a wireless communication connection; it can mean a direct connection or an indirect connection through an intermediate medium; it can mean the internal communication of two elements or the interaction between two elements, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0039] Furthermore, the technical solutions of the various embodiments of this application can be combined with each other, but only if they are based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be considered that such combination of technical solutions does not exist and is not within the scope of protection claimed by this application.

[0040] This application provides an absorbing type energy selective protection device, such as... Figure 1 As shown, in one embodiment, it includes: a dielectric substrate, a microstrip line, and a ground plane.

[0041] The dielectric substrate serves as the load-bearing structure, providing support for the microstrip lines and the ground plane.

[0042] The microstrip line is located on the top of the dielectric substrate and includes: a first microstrip stub, a second microstrip stub, and a branch stub; the two ends of the first microstrip stub are connected to the input port and the output port, respectively; the middle part of the first microstrip stub is connected to the branch stub through a diode; the branch stub is connected to the ground plane; one end of the second microstrip stub is connected to the middle part of the first microstrip stub through a diode; the other end of the second microstrip stub is connected to the matching load port; the diode connected to the branch stub is located on the first microstrip stub near the output port; the diode connected to the second microstrip stub is located on the first microstrip stub near the input port.

[0043] The floor is located at the bottom of the substrate and is a fully covered floor.

[0044] The aforementioned microwave-absorbing energy selective protection device connects a first microstrip stub to a grounded stub with a loading diode, and simultaneously connects the first microstrip stub to a second microstrip stub connected to a matching load port. By adaptively sensing the strength of the transmitted signal in the microstrip line, the diode is controlled to be in either a cutoff or conduction state. Utilizing the diode's adaptive conduction capability under high-energy signal conditions, microwave-absorbing energy selective protection of the microstrip transmission channel is achieved. This device can replace existing microstrip lines, enabling them to achieve adaptive electromagnetic protection through microwave absorption while transmitting signals, preventing the re-emission of reflected signals, reducing the radar cross-section, and making it particularly suitable for microwave device design.

[0045] In another embodiment, the microstrip line further includes a terminal short-circuit stub, that is, the microstrip line includes a first microstrip stub, a second microstrip stub, a branch stub, and a terminal short-circuit stub; one end of the terminal short-circuit stub is connected to the ground plane, and the other end is connected to the other end of the second microstrip stub.

[0046] In this embodiment, the first microstrip stub, the second microstrip stub, and the terminal short-circuit stub form an equivalent π-shaped stub structure, which significantly improves the relative bandwidth, including low insertion loss bandwidth for low-energy signals and absorption bandwidth for high-energy signals. It has broadband characteristics and achieves wideband absorption-type energy selective electromagnetic protection for the receiving channel of electronic devices in the S-band and C-band without reducing the transmission signal frequency band. It also improves the impedance matching effect and electromagnetic protection effect.

[0047] Preferably, the first microstrip stub, the second microstrip stub, and the terminal short-circuit stub are all strip-shaped structures with equal widths to ensure good signal transmission and electromagnetic protection.

[0048] More preferably, the terminal short-circuit stub includes two splicing segments that are perpendicular to each other to form an "L"-shaped structure, and the terminal short-circuit stub is located between the first microstrip stub and the second microstrip stub to improve signal transmission and electromagnetic protection.

[0049] More preferably, there are two branches, which are symmetrically arranged on both sides of the first microstrip branch and connected to the second microstrip branch through a diode, so as to improve the signal grounding capability and thus improve the electromagnetic protection effect.

[0050] More preferably, the dielectric substrate, the first microstrip stub, and the branch section are all rectangular structures; the length direction of the first microstrip stub is the same as that of the dielectric substrate, and the side of the first microstrip stub is parallel or perpendicular to the side of the dielectric substrate; the width of the first microstrip stub is equal to the length of the branch section, and the first microstrip stub and the branch section are arranged parallel to each other to avoid generating additional capacitance, thereby improving the signal transmission effect.

[0051] More preferably, the second microstrip stub includes four sequentially connected segments, each of which is a strip structure, and adjacent segments are arranged perpendicular to each other, so that the second microstrip stub undergoes three 90° bends and forms three right-angle structures, thereby reducing the size and layout difficulty without affecting the signal transmission effect and electromagnetic protection effect.

[0052] More preferably, on the second microstrip stub, each right-angled structure has a chamfered outer corner, and the radius of the chamfered structure is equal to the width of the second microstrip stub. That is, the chamfered structure is a quarter-circle arc structure, in order to reduce the impact on signal transmission effect, reduce the signal variation amplitude, and ensure the continuity of the signal at the right-angled structure.

[0053] More preferably, along the direction toward the matching load port, the direction of the first bend on the second microstrip stub is opposite to the direction of the second and third bends, in order to reduce the impact on external devices (the part connected to the input port).

[0054] More preferably, the distance between the diodes connected to the second microstrip stub on the first microstrip stub and the diodes connected to the stub is determined by the center frequency of the operating frequency band, and the length of the terminal short-circuit stub is also determined by the center frequency of the operating frequency band, specifically one-quarter of the microstrip transmission wavelength at the center frequency.

[0055] More preferably, the distance between the diodes connected to the second microstrip stub on the first microstrip stub and the diodes connected to the stub is denoted as L1, the length of the terminal short-circuit stub is denoted as L2, and the length of the second microstrip stub is denoted as L3, satisfying L1=L2 and L1+L2=L3, so as to achieve a better electromagnetic protection effect.

[0056] The working principle of this application is as follows:

[0057] When a low-energy signal is incident, the diode of the protection device is in the cut-off state. The second microstrip stub, the terminal short-circuit stub, and the branch stub have almost no effect on the first microstrip stub. The protection device is equivalent to a normal microstrip transmission line. Therefore, low-energy signals in a wide bandwidth can be transmitted from the input port to the output port with low loss (almost no attenuation).

[0058] When a high-energy signal is incident, the diode of the protection device adaptively switches to the conducting state. The first microstrip stub is electrically connected to the metal ground through two stubs. The second microstrip stub is also electrically connected to the first microstrip stub through the conducting diode. The first microstrip stub, the second microstrip stub, and the terminal short-circuit stub work together to form an equivalent π-type stub, creating a broadband matching stub. Therefore, the high-energy signal transmitted in the broadband to the terminal matching load port of the second microstrip stub is absorbed and dissipated, so that no high-energy signal passes through the part from the corresponding stub position on the first microstrip stub to the output port. That is, the high-energy signal in the broadband cannot be transmitted to the output port, thereby protecting the sensitive device behind the output port and adaptively realizing broadband absorbing energy selective electromagnetic protection.

[0059] It should be noted that the other end of the second microstrip stub is connected to the matched load port through an additional stub to merge the second microstrip stub and the terminal short-circuit stub, and lead it out to the matched load interface for easy processing and testing.

[0060] It should also be noted that the dielectric substrate is made of non-metallic materials, while the microstrip lines and ground planes are made of metallic materials.

[0061] It should also be noted that one end of both the branch node and the terminal short-circuit branch node is connected to the ground via a metallized through-hole (existing technology).

[0062] In one specific embodiment, the dielectric substrate is made of F4B material with a relative permittivity of 2.2, and has a length of 25 mm, a width of 18 mm, and a thickness of 0.5 mm. The first microstrip stub has a characteristic impedance of 50 ohms, a length of 18 mm, a width of 1.53 mm, and a thickness of 35 μm. The second microstrip stub has a characteristic impedance of 50 ohms, a length of L3 = 24 mm, a width of 1.53 mm, and a thickness of 35 μm. The stub has a length of 1.53 mm, a width of 0.53 mm, and a thickness of 35 μm, and is 0.53 mm away from the first microstrip stub. The length of the terminal short-circuit stub is... The length of the ground plane is L2 = 12.5 mm, the width is 1.53 mm, and the thickness is 35 μm; the length of the ground plane is 25 mm, the width is 18 mm, and the thickness is 35 μm; the distance between the diodes connected to the second microstrip branch on the first microstrip branch and the diodes connected to the branch is L1 = 11 mm; all three diodes are of the MA4AGFCP910 type; the first microstrip branch is a straight strip structure, the second microstrip branch has three 90° bends, the terminal short-circuit branch has one 90° bend, and all 90° bends have rounded chamfers with a radius of 1.53 mm.

[0063] like Figures 2 to 7 The simulation results shown cover a wide bandwidth including both S-band and C-band. Under low-energy signal conditions, the insertion loss in the 2GHz to 8GHz band is less than 0.2dB, with a maximum of 0.6dB, and the return loss is generally below 20dB, with a minimum of 15dB. Under high-energy signal conditions, the isolation of the output port in the 2GHz to 8GHz band is generally greater than 15dB, with a minimum of 10dB, and the return loss is not less than 10dB in the 2.6GHz to 7.1GHz band, and greater than 15dB in most areas. High-energy signals are absorbed at the matched load port with an insertion loss of no more than 1.5dB. The relative bandwidth (absolute bandwidth divided by the center frequency, i.e., (7.1-2.6) / ((7.1+2.6) / 2)≈93%) reaches over 90%, which is a significant advantage compared to the less than 20% relative bandwidth in existing technologies.

[0064] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0065] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A wave-absorbing energy selective protection device, characterized in that, include: The dielectric substrate, the microstrip line on top of the dielectric substrate, and the floor at the bottom of the dielectric substrate; The microstrip line includes: a first microstrip branch and a second microstrip branch; The two ends of the first microstrip stub are connected to the input port and the output port, respectively. The middle part of the first microstrip stub is connected to the branch section through a diode. The branch section is connected to the ground plane. One end of the second microstrip stub is connected to the middle of the first microstrip stub via a diode, and the other end of the second microstrip stub is connected to the matching load port.

2. The microwave absorbing energy selective protection device according to claim 1, characterized in that, The microstrip line also includes: a terminal short-circuit stub; One end of the terminal short-circuit stub is connected to the floor, and the other end is connected to the other end of the second microstrip stub.

3. The microwave absorbing energy selective protection device according to claim 2, characterized in that, The first microstrip stub, the second microstrip stub, and the terminal short-circuit stub are all strip-shaped structures with equal widths.

4. The wave-absorbing energy selective protection device according to claim 3, characterized in that, The terminal short-circuit stub includes two spliced ​​segments to form an "L"-shaped structure, and the terminal short-circuit stub is located between the first microstrip stub and the second microstrip stub.

5. A microwave-absorbing energy selective protection device according to any one of claims 1 to 4, characterized in that, There are two branches, which are symmetrically arranged on both sides of the first microstrip branch and connected to the second microstrip branch through a diode.

6. A microwave absorbing energy selective protection device according to any one of claims 1 to 4, characterized in that, Both the first microstrip branch and the branch are rectangular structures, and the width of the first microstrip branch is equal to the length of the branch.

7. A microwave-absorbing energy selective protection device according to any one of claims 1 to 4, characterized in that, The second microstrip branch includes four sequentially connected segments, each of which is a strip structure, and adjacent segments are arranged perpendicular to each other, so that the second microstrip branch undergoes three bends and forms three right-angle structures.

8. The microwave absorbing energy selective protection device according to claim 7, characterized in that, On the second microstrip branch, each right-angled structure has a chamfered outer corner, and the radius of the chamfered structure is equal to the width of the second microstrip branch.

9. The microwave absorbing energy selective protection device according to claim 8, characterized in that, Along the direction toward the matching load port, the direction of the first bend on the second microstrip stub is opposite to the direction of the second and third bends.

10. A microwave-absorbing energy selective protection device according to any one of claims 1 to 4, characterized in that, On the first microstrip stub, the distance between the diode connected to the second microstrip stub and the diode connected to the stub is determined by the center frequency of the operating frequency band.

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