Wafer processing method, wafer suction device, grinding device, and thinning apparatus

Abstract

The application provides a wafer processing method, a wafer adsorption device, a grinding device and a thinning equipment. The method comprises the following steps: placing a wafer on a wafer adsorption device; controlling a vacuum adsorption formed between the wafer and the wafer adsorption device; and grinding a side of the wafer opposite to the wafer adsorption device. The wafer adsorption device comprises an adsorption plate, a suction cup, a through-flow shaft with an axial through-hole and a mounting seat. The suction cup is provided with a containing cavity recessed towards the mounting seat on a side opposite to the mounting seat, and the adsorption plate is arranged in the containing cavity. The mounting seat has a seat hole penetrating in the axial direction, the suction cup has a suction cup hole coaxially communicated with the seat hole on a side of the suction cup towards the mounting seat, and a fluid channel fluidly connecting the suction cup hole and the containing cavity. The through-flow shaft extends into the suction cup through the seat hole and the suction cup hole. An end of the through-flow shaft opposite to the suction cup is fluidly connected with a fluid source, and the fluid is sucked from the axial through-hole by controlling the fluid source to form the vacuum adsorption.

Description

Technical Field

[0001] This application relates to the field of wafer grinding technology, and in particular, to a wafer processing method, a wafer adsorption device, a grinding device, and a thinning equipment. Background Technology

[0002] Currently, the semiconductor industry manufactures semiconductor chips by forming electronic circuits on the surface of semiconductor wafers. Before the wafer is diced into semiconductor chips, the back side of the wafer, opposite to the side containing the electronic circuitry, is ground using a grinding process, thereby thinning the wafer to a predetermined thickness. Grinding the back side of the wafer can reduce the chip package size, lower the package mounting height, and improve the chip's thermal diffusion efficiency, electrical performance, and mechanical properties, thus reducing the amount of chip processing required.

[0003] Currently, wafers are typically held and supported on a worktable using chucks, and then ground using a rotating grinding wheel. The chucks are usually ceramic. Water, air, and vacuum enter the upper surface of the chuck through a flow channel located at the contact surface between the chuck mounting flange and the ceramic chuck, enabling wafer adsorption and release. However, tiny particles can enter this contact surface along with water and air. Over time, this deteriorates the adhesion between the chuck mounting flange and the ceramic chuck, gradually worsening the TTV (Total Thickness Variation) of the ground wafer. Furthermore, during self-grinding of the ceramic chuck, the wafer is not vacuum-adsorbed, while during grinding, it is vacuum-adsorbed. Therefore, the adhesion between the chuck mounting flange and the ceramic chuck is looser during self-grinding and more tightly adhered during grinding. This inconsistent adhesion in these two situations causes grinding errors and affects the quality of wafer grinding. Summary of the Invention

[0004] This application provides a wafer processing method, a wafer adsorption device, a wafer grinding device, and a wafer thinning equipment to solve or alleviate at least some of the problems mentioned above.

[0005] According to one aspect of this application, a wafer processing method is provided, the method comprising: placing a wafer to be processed onto the wafer adsorption device; controlling the formation of a vacuum adsorption between the wafer and the wafer adsorption device; and grinding the side of the wafer facing away from the wafer adsorption device;

[0006] The wafer adsorption device includes an adsorption plate, a suction cup, a flow shaft with an axial through hole, and a mounting base for mounting the suction cup. The suction cup has a recessed receiving cavity on its side facing away from the mounting base, and the adsorption plate is disposed in the receiving cavity. The mounting base has an axially through seat hole, and the suction cup has a suction cup hole located on its side facing the mounting base and coaxially communicating with the seat hole, as well as a fluid channel that fluidly communicates the suction cup hole with the receiving cavity. The flow shaft extends through the seat hole and the suction cup hole into the suction cup so that the fluid avoids the contact surface between the suction cup and the mounting base. The axial through hole is fluidly communicating with the adsorption plate via the fluid channel.

[0007] One end of the flow shaft opposite to the suction cup is fluidly connected to a fluid source. By controlling the fluid source to draw fluid from the axial through hole, the adsorption plate vacuum adsorbs the wafer, thereby forming a vacuum adsorption between the wafer and the wafer adsorption device.

[0008] Optionally or alternatively, the method includes: stopping grinding after grinding the wafer to a preset thickness, and controlling the fluid source to input fluid into the axial through-hole to cause the wafer adsorption device to release the wafer.

[0009] Optionally or alternatively, the fluid channel includes a radial channel extending radially outward from the suction cup hole, an axial channel extending axially from the radial channel to the receiving cavity, and a circumferentially extending channel disposed at the bottom of the receiving cavity, the circumferential channel being in fluid communication with the receiving cavity and the axial channel respectively; "to vacuum adsorb the wafer by controlling the fluid source to draw fluid from the axial through hole" includes: the fluid between the adsorption plate and the wafer flows into the axial through hole sequentially through the circumferential channel, the axial channel and the radial channel to be drawn by the fluid source.

[0010] Optionally or alternatively, the fluid passage includes one or more radial passages, and one or more axial passages are provided along each radial passage.

[0011] Optionally or alternatively, the fluid channel includes a plurality of radial channels, wherein the included angle between any two adjacent radial channels is the same, so that fluid is uniformly input into or uniformly drawn from the adsorption plate.

[0012] Optionally or alternatively, multiple axial channels are provided at equal intervals along each radial channel.

[0013] Optionally or alternatively, a plurality of the axial channels are provided at non-uniform intervals along each radial channel, wherein the radial interval between the plurality of axial channels gradually decreases from the center of the chuck outwards, so that the vacuum suction force of the adsorption plate on the wafer remains consistent from the center of the chuck outwards.

[0014] Optionally or alternatively, the circumferential channel is configured in a circular shape, and the radius of the circumferential channel is equal to the radial distance from the center of the suction cup to the axial channel in fluid communication with it.

[0015] Optionally or alternatively, the fluid channel includes a plurality of the circumferential channels, and the width of the circumferential channels gradually increases from the center of the chuck outwards, so that the vacuum suction force of the adsorption plate on the wafer remains consistent from the center of the chuck outwards.

[0016] According to another aspect of this application, a wafer adsorption device is provided for wafer processing. The wafer adsorption device includes an adsorption plate, a suction cup, a flow shaft with an axial through-hole, and a mounting base for mounting the suction cup. The suction cup has a recessed receiving cavity on its side facing away from the mounting base, and the adsorption plate is disposed in the receiving cavity. The mounting base has an axially through seat hole, and the suction cup has a suction cup hole located on its side facing the mounting base and coaxially communicating with the seat hole, and a fluid channel connecting the suction cup hole and the receiving cavity. The flow axis extends through the seat hole and the suction cup hole into the suction cup so that the fluid avoids the contact surface between the suction cup and the mounting base. The axial through hole is in fluid communication with the adsorption plate via the fluid channel. The wafer adsorption device also includes a fluid source fluidly connected to one end of the flow axis opposite to the suction cup and a controller electrically connected to the fluid source. The controller is configured to control the fluid source to draw fluid from the axial through hole so that the adsorption plate vacuum adsorbs the wafer, and to control the fluid source to input fluid into the axial through hole so that the adsorption plate releases the wafer.

[0017] Optionally or alternatively, the fluid channel includes a radial channel extending radially outward from the suction cup hole, and an axial channel extending axially from the radial channel into the receiving cavity.

[0018] Optionally or alternatively, the fluid passage further includes a circumferentially extending circumferential channel disposed at the bottom of the receiving cavity, the circumferential channel being in fluid communication with both the receiving cavity and the axial channel.

[0019] Optionally or alternatively, the fluid passage includes one or more radial passages, and one or more axial passages are provided along each radial passage.

[0020] Optionally or alternatively, the fluid channel includes a plurality of radial channels, wherein the included angle between any two adjacent radial channels is the same.

[0021] Optionally or alternatively, multiple axial channels are provided at equal intervals along each radial channel.

[0022] Optionally or alternatively, a plurality of the axial channels are provided at non-uniform intervals along each radial channel, wherein the radial interval between the plurality of axial channels gradually decreases from the center of the suction cup outward.

[0023] Optionally or alternatively, the circumferential channel is configured in a circular shape, and the radius of the circumferential channel is equal to the radial distance from the center of the suction cup to the axial channel in fluid communication with it.

[0024] Optionally or alternatively, the fluid channel includes a plurality of the circumferential channels, and the width of the circumferential channels gradually increases from the center of the suction cup outward.

[0025] Optionally or alternatively, a seal is provided between the suction cup hole and the flow shaft to form a seal.

[0026] According to another aspect of this application, a wafer grinding apparatus is provided, the grinding apparatus comprising a wafer adsorption device as described in the foregoing aspect and a grinding wheel disposed opposite to the wafer adsorption device, the wafer adsorption device being configured to adsorb a wafer, and the grinding wheel being configured to grind the side of the wafer facing away from the wafer adsorption device.

[0027] According to another aspect of this application, a wafer thinning apparatus is provided, the wafer thinning apparatus including the wafer grinding apparatus described in the foregoing aspect.

[0028] According to the wafer processing method, wafer adsorption device, wafer grinding device, and wafer thinning equipment of this application, the fluid path used for vacuum adsorption or release of the wafer avoids the contact surface between the chuck and the mounting base. This prevents the fluid in the fluid path from flowing across this contact surface, avoiding the entry of microparticles with the fluid and ensuring a clean and tight contact between the chuck and the mounting base. Furthermore, because the fluid path between the fluid source and the adsorption plate avoids the contact surface between the chuck and the mounting base, the contact state between the chuck and the mounting base remains consistent in both self-grinding and wafer adsorption scenarios. This ensures the accuracy of wafer grinding and improves the quality of wafer grinding. Attached Figure Description

[0029] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings.

[0030] Figure 1 This is a perspective view of a wafer thinning apparatus according to one embodiment of this application;

[0031] Figure 2 A schematic cross-sectional view of a wafer adsorption device is shown;

[0032] Figure 3 It shows Figure 2 A schematic cross-sectional view of the circular adsorption device in another state;

[0033] Figure 4 A schematic cross-sectional view of a wafer adsorption device according to one embodiment of this application is shown;

[0034] Figure 5 It shows Figure 4 A top view of the suction cups in the wafer adsorption device;

[0035] Figure 6 It shows Figure 4 A bottom view of the suction cup of the wafer adsorption device in the image;

[0036] Figure 7 It shows Figure 4 A top view of the chuck mount of the wafer adsorption device; and

[0037] Figure 8 A flowchart of a wafer fabrication method according to one embodiment of this application is shown.

[0038] Figure Labels :

[0039] 1 wafer thinning equipment, 10 grinding device, 20 measuring unit, 30 cleaning unit, and 40 simple robotic arm;

[0040] Workbench 100, wafer adsorption device 200, grinding wheel 300, coarse grinding wheel 310, fine grinding wheel 320;

[0041] Adsorption plate 210, suction cup 220, receiving cavity 221, axial flow path 2211, suction cup hole 222, fluid channel 223, radial channel 223a, axial channel 223b, circumferential channel 223c, first mounting hole 224, flow shaft 230, axial through hole 231, mounting base 240, suction cup mounting flange 241, flange hole 2411, radial flow path 2412, second mounting hole 2413, third mounting hole 2414, rotating body 242, rotating body hole 2421, seal 250. Detailed Implementation

[0042] To enable those skilled in the art to better understand the technical solutions in the embodiments of this application, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art should fall within the protection scope of the embodiments of this application.

[0043] In the description of this application, it should be understood that the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0044] In addition, in the description of this application, unless otherwise specified and limited, it should be noted that the terms "installation", "connection" and "linking" should be interpreted broadly. For example, they can refer to mechanical or electrical connections, or internal connections between two components. They can be direct connections or indirect connections through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms according to the specific circumstances.

[0045] Figure 1A schematic perspective view illustrates a wafer thinning apparatus 1 according to one embodiment of this application. The wafer thinning apparatus 1 mainly includes a grinding device 10, which may include a worktable 100, one or more wafer adsorption devices 200 rotatably supported by the worktable 100, and a grinding wheel 300 disposed opposite to the wafer adsorption devices 200. The wafer adsorption devices 200 hold the wafer by adsorption and can drive the wafer to rotate. The grinding wheel 300 abuts against the wafer and grinds the side of the wafer opposite to the wafer adsorption device 200 to perform grinding and thinning processing on the wafer. Specifically, the worktable 100 can rotate about its central axis to drive one or more wafer adsorption devices 200 to rotate and move as a whole, thereby realizing the switching of the wafer adsorption devices 200 between different workstations. Each wafer adsorption device 200 can also rotate independently. Figure 1 As shown, in one possible implementation, three independently rotatable wafer adsorption devices 200 are evenly distributed on the worktable 100, each including a rough grinding section and a fine grinding section. Both the rough grinding section and the fine grinding section are equipped with grinding wheels 300, specifically a rough grinding wheel 310 and a fine grinding wheel 320, respectively. The three wafer adsorption devices 200 can correspond to three workstations: a rough grinding station, a fine grinding station, and a loading / unloading station. The two workstations corresponding to the rough grinding wheel 310 and the fine grinding wheel 320 are used for rough grinding and fine grinding, respectively, while the remaining workstation is used for wafer loading / unloading and cleaning. The rotation of the worktable 100 drives the three wafer adsorption devices 200 to switch between these three workstations, enabling the wafer adsorption devices 200 to carry the wafers in a cyclical movement according to the sequence of "loading / unloading station – rough grinding station – fine grinding station – loading / unloading station," thereby achieving fully automated wafer loading / unloading, continuous grinding, and cleaning. The wafer thinning equipment 1 may further include a measurement unit 20, which may include, for example, a contact measuring instrument and a non-contact optical measuring instrument, thereby enabling online monitoring of wafer thickness. The wafer thinning equipment 1 also includes a cleaning unit 30 for cleaning the suction cup 220 or the wafer. In a further embodiment, the wafer thinning equipment 1 may also include a simple robotic arm 40, which is used to place the wafer on the wafer adsorption device 200 for grinding, and to remove the wafer from the wafer adsorption device 200 for subsequent transfer after grinding and cleaning. As an optional embodiment, the simple robotic arm 40 may have internal tubing for vacuum extraction to achieve vacuum adsorption of the wafer.

[0046] Figure 2A schematic cross-sectional view of a wafer adsorption device 200 for wafer processing is shown. The wafer adsorption device 200 includes an adsorption plate 210, a suction cup 220, a flow shaft 230 having an axial through hole 231, and a mounting base 240 for mounting the suction cup 220. The suction cup 220 has a receiving cavity 221 recessed from its surface toward the mounting base 240 on the side opposite to the mounting base 240. The adsorption plate 210 is disposed in this receiving cavity 221 and can be, for example, a porous ceramic plate or other types of plates capable of adsorption. The mounting base 240 includes a suction cup mounting flange 241 and a rotating body 242, and is constructed with an axially through seat hole. Specifically, the seat hole includes a flange hole 2411 and a rotating body hole 2421 coaxially connected and respectively disposed in the suction cup mounting flange 241 and the rotating body 242. The flow shaft 230 extends through the seat hole into the flange hole 2411. The suction cup mounting flange 241 has a radial flow path 2412 on its side opposite to the rotating body 242, which is in fluid communication with the flange hole 2411. The suction cup 220 has an axial flow path 2211 extending axially from this radial flow path to the receiving cavity 221 (only one is shown in the figure for clarity). A fluid source can be provided at the end of the flow shaft 230 opposite to the suction cup 220. Thus, as... Figure 2 As indicated by the arrows, the axial through-hole 231 of the flow shaft 230, the flange hole 2411, the radial flow path 2412 in the suction cup mounting flange 241, the axial flow path 2211 in the suction cup 220, and the receiving cavity 221 of the suction cup 220 constitute the fluid path between the fluid source and the adsorption plate 210. The axial through-hole 231 of the fluid source draws fluid so that when the adsorption plate 210 is attached to the wafer, the fluid between the adsorption plate 210 and the wafer is drawn through the micropores in the adsorption plate 210, so that the adsorption plate 210 vacuum adsorbs the wafer; the fluid source can also input fluid into the axial through-hole 231 to input fluid between the adsorption plate 210 and the wafer, thereby disrupting the vacuum adsorption between the adsorption plate 210 and the wafer, thereby allowing the adsorption plate 210 to release the wafer.

[0047] However, for Figure 2 The wafer adsorption device 200 in the middle, such as Figure 3As shown, since a radial flow path 2412 is provided at the mating surface of the suction cup mounting flange 241 and the suction cup 220, when the fluid passes through, tiny particles may enter the mating surface with the fluid. Over time, this will cause gaps to form between the mating surfaces of the suction cup mounting flange 241 and the ceramic suction cup 220, resulting in a poor mating condition. This will cause the TTV of the ground wafer to gradually deteriorate, affecting the grinding quality of the wafer. Furthermore, during the initial self-grinding for planar calibration, the chuck 220 does not vacuum-adsorb the wafer, and there is no vacuum adsorption at the contact surface between the chuck mounting flange 241 and the chuck 220. The contact between the chuck mounting flange 241 and the chuck 220 is relatively loose. However, during wafer grinding, when the chuck 220 vacuum-adsorbs the wafer, the fluid path used to create the vacuum passes through the contact surface between the chuck mounting flange 241 and the chuck 220, resulting in a compressed contact state. Therefore, the contact state between the chuck mounting flange 241 and the chuck 220 is inconsistent between self-grinding and wafer grinding, leading to inconsistent surface conditions of the chuck 220 under these two conditions. This, in turn, results in poor TTV of the ground wafer, affecting the wafer grinding quality and subsequent processes.

[0048] Therefore, this application proposes a wafer adsorption device 200, such as... Figure 4 A schematic cross-sectional view of a wafer adsorption device 200 according to one embodiment of this application is shown. The wafer adsorption device 200 mainly includes an adsorption plate 210, a suction cup 220, a flow shaft 230 having an axial through hole 231, and a mounting base 240 for mounting the suction cup 220. The suction cup 220 has a receiving cavity 221 recessed from its surface toward the mounting base 240 on the side opposite to the mounting base 240, and the adsorption plate 210 is disposed in the receiving cavity 221. The mounting base 240 specifically includes a suction cup mounting flange 241 (which may have a radial dimension matching the suction cup 220) connecting to the suction cup 220, and a rotating body 242 fixedly connected to the suction cup mounting flange 241 on the side opposite to the suction cup 220. The rotating body 242 is configured to drive the suction cup mounting flange 241 and the suction cup 220 to rotate. The mounting base 240 has an axially through seat hole, which may include a flange hole 2411 and a rotating body hole 2421 coaxially connected and respectively disposed in the suction cup mounting flange 241 and the rotating body 242. The diameter of the flange hole 2411 may be smaller than the diameter of the rotating body hole 2421. The suction cup 220 has a suction cup hole 222 located on its side facing the mounting base 240 and coaxially connected with the seat hole, and a fluid channel 223 fluidly communicating the suction cup hole 222 with the receiving cavity 221. The flow shaft 230 passes through the seat hole (i.e., through the flange hole 2411 and the rotating body hole 2421) and the suction cup hole 222 to extend into the suction cup 220. The axial through hole 231 of the flow shaft 230 is fluidly connected to the suction plate 210 via the fluid channel 223 of the suction cup 220. Thus, as Figure 4As shown by the arrows in the figure, a fluid path is formed between the fluid source and the adsorption plate 210, namely: fluid source (not shown) — axial through hole 231 of flow shaft 230 — suction cup hole 222 — fluid channel 223 of suction cup 220 — adsorption plate 210. It should be understood that the direction of the arrows in the figure only indicates one flow direction of the fluid, such as the flow direction when releasing the wafer. In other embodiments, such as when performing vacuum adsorption, the fluid can flow in the opposite direction of the arrows. One end of the flow shaft 230 facing away from the suction cup 220 can be fluidly connected to a fluid source. The fluid source can be configured to draw fluid from the axial through-hole 231 and then through the fluid channel 233, so that when the adsorption plate 210 is attached to the wafer, the fluid between the adsorption plate 210 and the wafer is drawn through the micropores in the adsorption plate 210, allowing the adsorption plate 210 to vacuum-adsorb the wafer. The fluid source can also be configured to input fluid into the axial through-hole 231, so that fluid is input into the space between the adsorption plate 210 and the wafer through the fluid channel 233, thereby disrupting the vacuum adsorption between the adsorption plate 210 and the wafer, and thus allowing the adsorption plate 210 to release the wafer. The fluid can be a liquid (e.g., water), a gas, or a gas-liquid mixture, such as a mixture of nitrogen and water.

[0049] According to the wafer adsorption device 200 of this application, the fluid path between the fluid source and the adsorption plate 210 avoids the contact surface between the suction cup 220 and the mounting base 240 (specifically, the suction cup mounting flange 241). This prevents the fluid in the fluid path from flowing across this contact surface, avoiding damage to the structure on both sides of the contact surface by small particles entering the contact surface with the fluid, and preventing the suction cup from tilting. This ensures a clean and tight contact between the suction cup 220 and the mounting base 240. Furthermore, because the fluid path between the fluid source and the adsorption plate 210 avoids the contact surface between the suction cup 220 and the mounting base 240, the contact state between the suction cup 220 and the mounting base 240 is consistent when the suction cup 220 is performing self-grinding and when it is adsorbing a wafer. This ensures the accuracy of wafer grinding and achieves a better wafer TTV, thus improving the quality of wafer grinding.

[0050] like Figure 4 As shown, a seal 250, such as a sealing ring, can be provided between the suction cup hole 222 and the flow shaft 230 to form a seal.

[0051] Figure 5 It shows Figure 4 A top view of the suction cup 220 of the wafer adsorption device 200 in the middle; Figure 6 It shows Figure 4 A bottom view of the suction cup 220 of the wafer adsorption device 200. (Combined with...) Figure 4 As can be seen, the fluid channel 223 in the suction cup 220 may include a radial channel 223a extending radially outward from the suction cup hole 222 (in Figure 5Each radial channel 223a is represented by two parallel dashed lines) and an axial channel 223b extending axially from the radial channel 223a to the receiving cavity 221 (in Figure 5 (Displayed as small circles in the image). For clarity... Figure 4 and Figure 5 Only one radial channel 223a and one axial channel 223b are marked. In the axial direction, the fluid channel 223 is located between the surface of the suction cup 220 that mates with the mounting base 240 and the receiving cavity 221. The fluid channel 223 may include one or more radial channels 223a, for example... Figure 5 The six radial channels 223a shown are preferably arranged at equal angles, for example, at 60-degree intervals. One or more axial channels 223b (including two or more) can be provided at intervals along each radial channel 223a, thereby allowing fluid communication between the suction cup hole 222 or the axial through hole 231 of the flow shaft 230 and the receiving cavity 221 via the radial channels 223a and the axial channels 223b. In an optional embodiment, the plurality of axial channels 223b at each radial channel 223a can be arranged at equal intervals; or, the plurality of axial channels 223b at each radial channel 223a can be arranged at non-uniform intervals, for example, from the center of the suction cup 220 outwards, the intervals gradually become smaller, that is, the axial channels 223b are arranged from sparse to dense in the radial direction, thereby cooperating with the trend of the axial channels 223b gradually increasing in circumferential interval as they move away from the center of the suction cup 220, so that all the axial channels 223b are distributed more uniformly along the suction cup 220 as a whole, thereby making the fluid drawn more uniformly along the suction cup 220, ensuring the suction force of the adsorbed wafer is balanced, so that the wafer will not be deformed due to adsorption. Alternatively, in an optional embodiment, the number of axial channels 223b arranged along each radial channel 223a is not equal. That is, the axial channels 223b equidistant from the center of the suction cup 220 can be considered to form a circular array, and the number of axial channels 223b in the circular array radially outward from the center of the suction cup 220 can gradually increase. The number of axial channels 223b in each ring in the circumferential direction can be inconsistent. For example, fewer axial channels 223b can be arranged in the circular array near the center of the suction cup 220, and the number of axial channels 223b in each ring increases as it moves away from the center of the suction cup 220 (for example, two axial channels 223b are arranged in the circular array closest to the center of the suction cup 220, four in the outermost ring, and six in the outermost ring). In a specific embodiment, the axial channels 223b can be constructed as cylindrical microporous channels, and the diameter of the microporous channels can be the same as the width of the radial channels 223a.

[0052] like Figure 5As shown by the multiple circular dashed lines in the image, the fluid channel 223 in the suction cup 220 may also include a channel located at the bottom of the receiving cavity 221 (e.g., ...). Figure 4 A circumferentially extending channel 223c (in the lower part of the cavity) is, for example, a groove recessed from the bottom surface of the receiving cavity 221 away from the adsorption plate 210. The circumferential channel 223c is in fluid communication with the receiving cavity 221 and the axial channel 223b. Specifically, the circumferential channel 223c can be as follows: Figure 5 The circumferential channel 223c is arranged in a circular shape, with its radius equal to the radial distance from the center of the axial channel 223b, which is in fluid communication with it. Multiple circumferential channels 223c can be provided, each passing through the axial channel 223b at a corresponding radius position on each radial channel 223a, thus forming multiple annular circumferential channels 223c extending radially outward from the center of the suction cup 220. The width of the circumferential channel 223c can be greater than or equal to (i.e., not less than) the diameter of the axial channel 223b it communicates with. In optional embodiments, the width of the circumferential channel 223c can gradually increase from the center of the suction cup 220 outward, thereby ensuring a more uniform distribution of the horizontal cross-sectional area of ​​the outer circumferential channel 223c from the center of the suction cup 220 outward, guaranteeing uniform fluid suction on the suction cup, and thus more uniformly adsorbing the wafer. The circumferential channel 223c extends the point contact between the fluid in the fluid path and the adsorption plate 210 from the axial channel 223b to a linear contact provided by the circumferential channel 223c. Multiple circumferential channels 223c form a concentric ring structure covering the surface of the adsorption plate 210, facilitating fluid diffusion within the adsorption plate 210 and facilitating fluid extraction from the adsorption plate 210, thus improving the efficiency of vacuum adsorption and release. In an optional embodiment, the circumferential channel 223c can be configured as a spiral channel extending continuously from the radial interior to the radial exterior, passing through part or all of the axial channel 223b. In other embodiments, the circumferential channel 223c may not be a complete circle, but rather multiple arcs.

[0053] In specific implementation methods, such as Figure 5 and Figure 6 As shown, multiple evenly spaced first mounting holes 224 can be provided at the outer edge of the suction cup 220, such as... Figure 7 As shown, the outer edge of the suction cup mounting flange 241 can be provided with multiple second mounting holes 2413 that match the first mounting hole 224. The suction cup 220 can be fixedly connected to the suction cup mounting flange 241 via connectors (e.g., bolts) passing through the first mounting hole 224 and the second mounting hole 2413. The suction cup mounting flange 241 and the rotating body 242 can also be fixedly connected via connectors (e.g., bolts), such as... Figure 7The image shows a plurality of third mounting holes 2414 provided on the suction cup mounting flange 241, which are used for connecting the suction cup mounting flange 241 to the rotating body 242.

[0054] In one embodiment, the suction cup 220 and the suction cup mounting flange 241 may be made of a material such as ceramic.

[0055] Figure 8 A flowchart illustrating a wafer fabrication method according to one embodiment of this application is shown. The method is performed using a wafer thinning apparatus according to one embodiment of this application, and the wafer fabrication method may specifically include:

[0056] S1: Place the wafer to be processed onto the wafer adsorption device 200;

[0057] S2: Controlling the formation of a vacuum adsorption between the wafer and the wafer adsorption device 200; and

[0058] S3: Grind the side of the wafer facing away from the wafer adsorption device 200 using the grinding wheel 300.

[0059] In a more specific embodiment, the method may further include, before step S1, using a simple robotic arm 40 to adsorb the wafer and transfer it to the wafer adsorption device 200. The method may also include, in step S4: after grinding the wafer to a preset thickness, stopping the grinding process and controlling a fluid source to input fluid into the axial through-hole 231 to release the wafer from the wafer adsorption device 200. Additionally, the method may include, after step S4, other processing steps such as transferring the wafer to a cleaning device for wafer cleaning.

[0060] Furthermore, in step S2, vacuum adsorption is achieved by controlling the fluid source to draw fluid from the axial through hole 231 so that the adsorption plate 210 vacuum adsorbs the wafer. Specifically, it may include: the fluid between the adsorption plate 210 and the wafer flows into the axial through hole 231 through the circumferential channel 223c, the axial channel 223b and the radial channel 223a in sequence so as to be drawn by the fluid source.

[0061] The wafer processing method, wafer adsorption device, wafer grinding device, and wafer thinning equipment according to this application have been described above by way of example. It should be understood that the embodiments described herein are merely illustrative of the embodiments of this application and are not intended to limit the embodiments of this application. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the embodiments of this application. Therefore, all equivalent technical solutions also fall within the scope of the embodiments of this application, and the patent protection scope of the embodiments of this application should be defined by the claims.

Claims

1. A wafer fabrication method, characterized in that, The method includes: Place the wafer to be processed onto the wafer adsorption device; Controlling the formation of a vacuum adsorption between the wafer and the wafer adsorption device; and The side of the grinding wafer that is opposite to the wafer adsorption device; The wafer adsorption device includes an adsorption plate, a suction cup, a flow shaft with an axial through hole, and a mounting base for mounting the suction cup. The suction cup has a recessed receiving cavity on the side facing away from the mounting base, and the adsorption plate is disposed in the receiving cavity. The mounting base has an axially through seat hole, and the suction cup has a suction cup hole located on its side facing the mounting base and coaxially connected with the seat hole, as well as a fluid channel that fluidly connects the suction cup hole and the receiving cavity. The axial through hole is fluidly connected to the adsorption plate through the fluid channel. The flow shaft extends through the seat hole and the suction cup hole into the suction cup so that the fluid avoids the contact surface between the suction cup and the mounting base, thereby preventing particles from entering the contact surface with the fluid. This ensures that the self-grinding of the suction cup is consistent with the tightness of the contact between the suction cup and the mounting base when the suction cup adsorbs the wafer. One end of the flow shaft facing away from the suction cup is connected to the fluid source. By controlling the fluid source to draw fluid from the axial through hole, the suction plate vacuum adsorbs the wafer, thereby forming a vacuum adsorption between the wafer and the wafer adsorption device.

2. The wafer fabrication method according to claim 1, characterized in that, The method includes: stopping grinding after grinding the wafer to a preset thickness, and controlling the fluid source to input fluid into the axial through hole to release the wafer by the wafer adsorption device.

3. The wafer fabrication method according to claim 1, characterized in that, The fluid channel includes a radial channel extending radially outward from the suction cup hole, an axial channel extending axially from the radial channel to the receiving cavity, and a circumferential channel extending circumferentially at the bottom of the receiving cavity, wherein the circumferential channel is in fluid communication with the receiving cavity and the axial channel, respectively. "To vacuum adsorb the wafer by controlling the fluid source to draw fluid from the axial through hole" includes: the fluid between the adsorption plate and the wafer flows into the axial through hole sequentially through the circumferential channel, the axial channel and the radial channel so as to be drawn in by the fluid source.

4. The wafer fabrication method according to claim 3, characterized in that, The fluid channel includes one or more radial channels, and one or more axial channels are provided along each radial channel.

5. The wafer fabrication method according to claim 4, characterized in that, The fluid channel includes multiple radial channels, and the included angle between two adjacent radial channels is the same, so that the fluid is uniformly input into the adsorption plate or uniformly drawn from the adsorption plate.

6. The wafer fabrication method according to claim 4, characterized in that, Multiple axial channels are provided at equal intervals along each radial channel.

7. The wafer fabrication method according to claim 4, characterized in that, Multiple axial channels are provided at non-uniform intervals along each radial channel, wherein the radial interval between the multiple axial channels gradually decreases from the center of the chuck outwards, so that the vacuum suction force of the adsorption plate on the wafer remains consistent from the center of the chuck outwards.

8. The wafer processing method according to any one of claims 3-7, characterized in that, The circumferential channel is configured in a circular shape, and the radius of the circumferential channel is equal to the radial distance from the center of the suction cup to the axial channel in fluid communication with it.

9. The wafer fabrication method according to claim 8, characterized in that, The fluid channel includes a plurality of circumferential channels, and the width of the circumferential channels gradually increases from the center of the chuck outwards, so that the vacuum suction force of the adsorption plate on the wafer remains consistent from the center of the chuck outwards.

10. A wafer adsorption device for wafer processing, characterized in that, The wafer adsorption device includes an adsorption plate, a suction cup, a flow shaft with an axial through hole, and a mounting base for mounting the suction cup. The suction cup has a recessed receiving cavity on its side facing away from the mounting base, and the adsorption plate is disposed in the receiving cavity. The mounting base has an axially through seat hole, and the suction cup has a suction cup hole located on its side facing the mounting base and coaxially communicating with the seat hole, and a fluid channel that fluidly communicates the suction cup hole with the receiving cavity. The flow shaft extends through the seat hole and the suction cup hole into the suction cup so that the fluid avoids the contact surface between the suction cup and the mounting base. The axial through hole is fluidly communicating with the adsorption plate via the fluid channel. The wafer adsorption device further includes a fluid source fluidly connected to one end of the flow axis opposite to the suction cup and a controller electrically connected to the fluid source. The controller is configured to control the fluid source to draw fluid from the axial through hole to vacuum adsorb the wafer on the adsorption plate, and to control the fluid source to input fluid into the axial through hole to release the wafer from the adsorption plate.

11. The wafer adsorption device according to claim 10, characterized in that, The fluid channel includes a radial channel extending radially outward from the suction cup hole, and an axial channel extending axially from the radial channel into the receiving cavity.

12. The wafer adsorption device according to claim 11, characterized in that, The fluid channel also includes a circumferentially extending circumferential channel disposed at the bottom of the receiving cavity, the circumferential channel being in fluid communication with both the receiving cavity and the axial channel.

13. The wafer adsorption device according to claim 12, characterized in that, The fluid channel includes one or more radial channels, and one or more axial channels are provided along each radial channel.

14. The wafer adsorption device according to claim 12, characterized in that, The fluid channel includes multiple radial channels, and the included angle between any two adjacent radial channels is the same.

15. The wafer adsorption device according to claim 13, characterized in that, Multiple axial channels are provided at equal intervals along each radial channel.

16. The wafer adsorption device according to claim 13, characterized in that, Multiple axial channels are provided at non-uniform intervals along each radial channel, wherein the radial interval between the multiple axial channels gradually decreases from the center of the suction cup outward.

17. The wafer adsorption device according to any one of claims 12-16, characterized in that, The circumferential channel is configured in a circular shape, and the radius of the circumferential channel is equal to the radial distance from the center of the suction cup to the axial channel in fluid communication with it.

18. The wafer adsorption device according to claim 17, characterized in that, The fluid channel includes a plurality of circumferential channels, and the width of the circumferential channels gradually increases from the center of the suction cup outwards.

19. The wafer adsorption device according to any one of claims 10-16, characterized in that, A sealing element is provided between the suction cup hole and the flow shaft to form a seal.

20. A wafer grinding apparatus, characterized in that, The grinding apparatus includes a wafer adsorption device according to any one of claims 10-19 and a grinding wheel disposed opposite to the wafer adsorption device, the wafer adsorption device being configured to adsorb a wafer, and the grinding wheel being configured to grind the side of the wafer facing away from the wafer adsorption device.

21. A wafer thinning apparatus, characterized in that, The wafer thinning equipment includes the wafer grinding apparatus according to claim 20.

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