Highly reliable high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem

Abstract

The application discloses a high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem, comprising a DPC substrate, a copper-based three-dimensional structure, a two-stage SiC adapter plate, a bare chip, a radio frequency circuit, a passive device and an antenna interface; wherein the DPC substrate is used for realizing integrated three-dimensional heterogeneous integration of the microsystem; the copper-based three-dimensional structure comprises a three-dimensional coaxial transmission structure and a three-dimensional packaging frame structure, and is used for realizing vertical transmission of high-power radio frequency signals and air-tight packaging of the microsystem; the two-stage SiC adapter plate is used for realizing a 2.5D*2 five-layer ultra-high-density mixed three-dimensional stacking architecture; the bare chip comprises a silicon-based Fan-out multifunctional bare chip, a power management bare chip, a power amplifier bare chip and a receiving bare chip; the radio frequency circuit comprises a radio frequency transmitting circuit and a radio frequency receiving circuit. The application forms a complete integrated air-tight packaging microsystem, and simultaneously realizes high reliability, high-density integration and high-power heat dissipation.

Description

Technical Field

[0001] This invention relates to the field of radio frequency microsystems technology, and more specifically to a high-reliability, high-power, three-dimensional heterogeneous integrated radio frequency antenna microsystem. Background Technology

[0002] Satellite communication boasts advantages such as wide coverage, long transmission distance, and flexible and rapid network deployment. It can achieve near-seamless coverage in areas such as oceans, mountains, and plateaus, meeting the communication coverage needs of various users and thus possessing significant commercial value. In recent years, low-Earth orbit satellite communication systems have begun to provide high-speed satellite internet services to ordinary consumers, leading to a substantial increase in the number of consumers using satellite internet services. Satellite internet has become a global focus and one of the most sought-after industries.

[0003] As satellite payloads evolve towards miniaturization, integration, and multifunctionality, multifunctional electronic systems that integrate communication, sensing, and even computing functions are an inevitable trend for future development. This necessitates antennas with ultra-wideband characteristics. Ultra-wideband phased array antennas not only meet the ultra-wideband requirements of multi-band integration but also possess features such as rapid beam scanning, agile beamform, low profile, and strong anti-interference capabilities. Therefore, ultra-wideband phased array antennas have a very broad application prospect in the satellite field. With the continuous evolution of integrated circuit technology and advanced packaging processes, phased array antennas are developing towards millimeter-wave and higher frequency bands, fully utilizing the rich spectrum resources of high-frequency bands to improve the performance of electronic information equipment. Millimeter-wave phased array antenna technology is gradually showing trends towards low cost, chip-level integration, and wafer-level packaging. This highly integrated antenna-in-package (AIP) technology combines integrated circuit technology and advanced packaging processes, which can greatly reduce internal interconnection losses and significantly improve system energy efficiency.

[0004] The main components of a phased array antenna system include: antenna elements and array surfaces, T / R modules, beamforming network, power supply, beam control, and structural and thermal control components. Among these, the antenna elements are responsible for converting between radio frequency signals and spatial electromagnetic waves. Their operating bandwidth and radiation efficiency are crucial to the design of the entire phased array system; therefore, the appropriate antenna element type must be selected based on system requirements. The beamforming network is used to achieve the amplitude and phase distribution required by each element of the phased array antenna during beam scanning, and its implementation directly affects the overall system architecture of the phased array antenna.

[0005] On the other hand, Moore's law has approached the physical limit, but future electronic information systems will continue to develop towards higher integration, higher performance, higher operating frequency, etc. The traditional integrated packaging technology gradually cannot meet the integration requirements of new systems. The future technology development trend will be a combination of continuing Moore's law and surpassing Moore's law, realizing higher value systems-microsystems through three-dimensional heterogeneous integration.

[0006] As an advanced integrated packaging technology under the trend of system miniaturization, radio frequency microsystem integration technology has become a major basic technology leading the development of electronic information equipment and promoting the innovation of electronic technology. It is an important technical platform supporting the transformation of sensing and communication capabilities of electronic information equipment, and is also one of the core technologies of current electronic information technology research.

[0007] Radio frequency microsystems mainly target the miniaturization, lightweight, and multifunctional application requirements of integrated radio frequency front-ends and active arrays in fields such as 5G communication and the Internet of Things. Based on microelectronics, optoelectronics, MEMS, and other electronic components, microsystem heterogeneous integration process technologies represented by micro-nano processing technologies are combined with architecture, software, and algorithms to integrate radio frequency, digital, optoelectronic, energy, and other subsystems at high density, achieving significant reductions in radio frequency system size and power consumption, significant improvements in performance and reliability, and significant reductions in channel cost and life cycle cost. Radio frequency microsystem technology has wide applications in fields such as information technology, biology, medicine, industrial control, and consumer electronics.

[0008] Existing high-reliability high-power radio frequency microsystems are mainly based on integrated three-dimensional ceramic packaging architecture. Three-dimensional ceramic packaging serves as both a package and a heat sink structure. When performing three-dimensional heterogeneous integration, a cavity structure needs to be machined on the ceramic substrate for stacking multiple levels of bare chips. High-density bonding finger structures with narrow spacing need to be prepared around the cavity, which is difficult. In addition, due to the limited thermal conductivity of ceramic materials, the overall microsystem heat dissipation effect is generally poor, and only small and medium power radio frequency circuits can be integrated, which severely restricts the multifunctionality of radio frequency microsystems.

[0009] The existing high-reliability high-power radio frequency micro system adopts a traditional ceramic hermetic packaging process path of "ceramic substrate→ high-temperature soldering packaging frame→ parallel seam welding packaging cover plate", the process flow is complex, the process implementation is difficult, and the production efficiency and yield are not high. When the packaging frame is high-temperature soldered to the ceramic substrate, it is necessary to ensure that the cavity partition wall and the substrate are in good soldering state and have no leakage points; the multi-cavity packaging frame and the packaging cover plate need to be designed with multiple cap regions, cavity structures and step structures, and the linear cutting process is adopted during processing, which is difficult and low in precision, and the motor wheel needs to be accurately controlled during capping, which is difficult to control and is prone to welds, resulting in air leakage and signal leakage, affecting the hermeticity and electromagnetic shielding effect of the packaging. SUMMARY

[0010] The present application provides a high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated micro system, which aims at the defects of the prior art, based on a 5-layer stacked integrated packaging architecture of upper / middle / lower 3-level DPC substrates and a 2.5Dx2 super-high-density mixed three-dimensional stacked architecture of two-level SiC adapter plates, integrates radio frequency circuits and antenna interfaces, creatively adopts a DPC substrate direct copper electroplating three-dimensional coaxial transmission structure and a three-dimensional packaging frame structure, combines an innovative high-power heat dissipation scheme, fully utilizes the advantages of copper-based, silicon-based and compound-based materials, realizes multi-material fusion and integrated three-dimensional heterogeneous integration of the micro system. While solving the heat dissipation problem of high-power radio frequency signals in the radio frequency micro system, the electromagnetic compatibility and hermeticity of the complex radio frequency micro system are also considered, and high-density integration and high reliability of the radio frequency micro system are realized, which has strong engineering practicability and can cover the DC-40GHz frequency band.

[0011] The technical solution of the present application is as follows:

[0012] 1. A high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated micro system, characterized by comprising: a DPC substrate, a copper-based three-dimensional structure, two-level SiC adapter plates, a bare chip, a radio frequency circuit, a passive device and an antenna interface.

[0013] The DPC substrate comprises: a DPC upper substrate, a DPC middle substrate and a DPC lower substrate, and is used to realize integrated three-dimensional heterogeneous integration of the micro system through a 5-layer stacked integrated packaging architecture.

[0014] The copper-based three-dimensional structure comprises: a three-dimensional coaxial transmission structure and a three-dimensional packaging frame structure, and is used to realize vertical transmission of high-power radio frequency signals and hermetic packaging of the micro system.

[0015] The two-level SiC adapter plates are high-thermal-conductivity SiC adapter plates, comprising: a first-level SiC adapter plate and a second-level SiC adapter plate, and are used to realize a 5-layer super-high-density mixed three-dimensional stacked architecture of 2.5Dx2.

[0016] The bare chip includes: a silicon-based Fan-out multifunctional bare chip, a power management bare chip, a power amplifier bare chip, and a receiving bare chip;

[0017] The radio frequency circuit includes: a radio frequency transmitting circuit and a radio frequency receiving circuit;

[0018] The radio frequency transmitting circuit and the two-stage SiC adapter board are assembled above the lower substrate of the DPC according to a 2.5D x 2 five-layer hybrid three-dimensional stacking architecture; the first-stage SiC adapter board and the power amplifier bare chip are directly stacked above the lower substrate of the DPC; the silicon-based Fan-out multifunctional bare chip is assembled above the first-stage SiC adapter board by means of flip-chip welding; the second-stage SiC adapter board is stacked above the silicon-based Fan-out multifunctional bare chip; the power management bare chip is assembled above the second-stage SiC adapter board by means of flip-chip welding; the power amplifier bare chip is interconnected with the two-stage SiC adapter board and the lower substrate of the DPC by means of wire bonding; the radio frequency receiving circuit is assembled below the upper substrate of the DPC and is interconnected with the upper substrate of the DPC by means of wire bonding; and the antenna interface is fanned out from above the upper substrate of the DPC.

[0019] Further, the upper part of the lower substrate of the DPC and the lower part of the upper substrate of the DPC are directly electroplated with a copper-based three-dimensional coaxial transmission structure to realize vertical transmission of high-power radio frequency signals; the upper part of the lower substrate of the DPC and the lower part of the upper substrate of the DPC are directly electroplated with a copper-based three-dimensional packaging surrounding frame structure to realize airtight packaging of the micro system; a three-dimensional electromagnetic shielding structure of the radio frequency circuit inside the micro system is constructed through the copper-based three-dimensional packaging surrounding frame structure and the three-dimensional coaxial transmission structure; and a high-power heat dissipation path from the power amplifier bare chip to the thick copper layer of the DPC substrate to the copper-based three-dimensional structure is formed.

[0020] Further, a thick copper wiring technology is adopted to realize interconnection and rewiring of the DPC substrate through a high-density thick copper wiring structure; and the DPC substrate is subjected to signal vertical transmission through a TCV structure.

[0021] Further, the multifunctional bare chip is converted into a silicon-based flip-chip welding type packaging form through a silicon-based Fan-out process; the silicon-based Fan-out multifunctional bare chip is assembled above the first-stage SiC adapter board through a flip-chip welding process by adopting flip-chip welding technology; the power management bare chip is assembled above the second-stage SiC adapter board; the power amplifier bare chip and the first-stage SiC adapter board are assembled above the lower substrate of the DPC through a bonding process by adopting high-thermal-conductivity conductive adhesive technology; the second-stage SiC adapter board is stacked above the silicon-based Fan-out multifunctional bare chip; the radio frequency receiving circuit is assembled below the upper substrate of the DPC, and integrated passive devices are assembled on the surface of the DPC substrate; and the interconnection between the power amplifier bare chip and the lower substrate of the DPC and the two-stage SiC adapter board, and the interconnection between the receiving bare chip and the upper substrate of the DPC are realized through a wire bonding process by adopting wire bonding technology.

[0022] Further, the passive device is manufactured into an integrated passive device through the IPD process.

[0023] Further, the RDL technology is adopted, and the interconnection and rewiring of the SiC adapter plate are realized through the high-density RDL wiring structure.

[0024] Further, the gold-tin alloy technology is adopted, and the copper-based three-dimensional packaging structure of the upper substrate of the DPC is stacked above the middle substrate of the DPC through the gold-tin alloy cap process, and the copper-based three-dimensional packaging structure of the lower substrate of the DPC is stacked below the middle substrate of the DPC, so as to realize the vertical transmission of the high-power radio frequency signal between the DPC substrates and form a final complete integrated hermetic packaging structure.

[0025] Further, the radio frequency transmitting circuit and the two-stage SiC adapter plate are assembled above the lower substrate of the DPC according to the 2.5D x 2 mixed three-dimensional stacking architecture, and form a medium-power heat dissipation path.

[0026] Further, the BGA technology is adopted, and the radio frequency beam signals and the power control signals below the lower substrate of the DPC are fanned out through the BGA ball grid array, and the antenna interface above the upper substrate of the DPC is fanned out; the ball planting technology is adopted, and the BGA pads of the lower substrate of the DPC are fanned out through the BGA solder balls of the lower substrate of the DPC, and the BGA pads of the upper substrate of the DPC are fanned out through the BGA solder balls of the upper substrate of the DPC.

[0027] Compared with the prior art, the beneficial effects of the present application are as follows:

[0028] 1. The high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem adopts a disruptive two-stage SiC adapter plate 2.5D x 2 ultra-high-density mixed three-dimensional stacking architecture, and the radio frequency transmitting circuit and the two-stage SiC adapter plate are assembled above the lower substrate of the DPC according to the 5-layer mixed three-dimensional stacking architecture; wherein the "silicon-based Fan-out multifunctional bare chip→the first-stage SiC adapter plate→the lower substrate of the DPC" constitutes a 2.5D x 1 architecture; and the "power management bare chip→the second-stage SiC adapter plate→the silicon-based Fan-out multifunctional bare chip" constitutes a 2.5D x 2 architecture. The 2.5D x 2 ultra-high-density mixed three-dimensional stacking architecture fully taps the integration potential in the Z direction, greatly improves the integration density of the microsystem, and reduces the overall packaging volume, not only realizing the high-density three-dimensional heterogeneous integration of the radio frequency circuit, but also forming a medium-power heat dissipation path, laying a solid foundation for the efficient thermal management of the entire microsystem, and having strong innovation and engineering practicability.

[0029] 2、The high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem of the application adopts a DPC substrate directly electroplated with a copper-based three-dimensional coaxial transmission structure and a three-dimensional packaging frame structure, not only realizes vertical transmission of copper-based three-dimensional packaging high-power radio frequency signals and microsystem airtight packaging frame, but also forms an overall copper-based three-dimensional heat sink structure; a radio frequency transmitting circuit and a two-stage high-thermal-conductivity SiC adapter plate are assembled above the lower DPC substrate according to a 2.5D x 2 mixed three-dimensional stacking architecture, forming a medium-power heat dissipation path; through a "power amplifier bare chip-DPC substrate thick copper layer-copper-based three-dimensional structure", a characteristic process high-power heat dissipation path is formed. Both heat dissipation paths are dissipated through the overall copper-based three-dimensional heat sink structure without adding extra heat sink structures, fully exerting the excellent heat dissipation characteristics of copper-based materials, solving the pain points of traditional radio frequency microsystems in high-power radio frequency signal heat dissipation, and being very suitable for wide engineering promotion.

[0030] 3、The high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem of the application adopts an innovative upper / middle / lower three-stage DPC substrate five-layer stacking integrated packaging architecture, directly electroplating a copper-based three-dimensional coaxial transmission structure and a three-dimensional packaging frame structure above the upper DPC substrate and below the lower DPC substrate, stacking the copper-based three-dimensional packaging structure of the upper DPC substrate above the middle DPC substrate and the copper-based three-dimensional packaging structure of the lower DPC substrate below the middle DPC substrate through a gold-tin alloy capping process, forming a final complete integrated airtight packaging structure. The application overturns the traditional DPC airtight packaging process path of "DPC substrate-high-temperature soldering packaging frame-parallel seam welding packaging cover plate", reduces the high-temperature soldering packaging frame process link, realizes the entire airtight packaging through only one capping process, greatly simplifies the process flow, significantly reduces the process implementation difficulty, and has strong engineering practicability.

[0031] 4、The high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem of the application stacks the copper-based three-dimensional packaging structure of the upper DPC substrate above the middle DPC substrate and the copper-based three-dimensional packaging structure of the lower DPC substrate below the middle DPC substrate through a gold-tin alloy capping process, forming a final complete three-dimensional electromagnetic shielding structure. The application overturns the traditional DPC packaging electromagnetic shielding technology path of "DPC substrate-high-temperature soldering multi-cavity packaging frame-parallel seam welding packaging cover plate". The traditional multi-cavity packaging frame and packaging cover plate need to be designed with multiple capping areas, cavity structures and step structures, and the line cutting process is adopted during processing, which is difficult and low in precision. The motor wheel needs to be accurately controlled during capping, which is extremely difficult to control and is prone to signal leakage, affecting the electromagnetic shielding effect. The application innovates the manufacturing method of the three-dimensional electromagnetic shielding structure, significantly improving the production efficiency and yield. BRIEF DESCRIPTION OF DRAWINGS

[0032] Other features, objects, and advantages of the invention will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings:

[0033] Figure 1 This is a cross-sectional view of a high-reliability, high-power, three-dimensional heterogeneous integrated radio frequency antenna microsystem.

[0034] Figure 2 is a schematic diagram of the upper substrate of a high-reliability, high-power, three-dimensional heterogeneous integrated radio frequency antenna microsystem (DPC). Figure 2(a) is a side view of the upper substrate of the DPC, Figure 2(b) is a top view of the upper substrate of the DPC, and Figure 2(c) is a bottom view of the upper substrate of the DPC.

[0035] Figure 3 is a schematic diagram of the substrate in the high-reliability, high-power, three-dimensional heterogeneous integrated radio frequency antenna microsystem (DPC). Figure 3(a) is a side view of the substrate in the DPC, Figure 3(b) is a top view of the substrate in the DPC, and Figure 3(c) is a bottom view of the substrate in the DPC.

[0036] Figure 4 is a schematic diagram of the substrate of the high-reliability, high-power, three-dimensional heterogeneous integrated radio frequency antenna microsystem (DPC). Figure 4(a) is a side view of the substrate of the DPC, Figure 4(b) is a top view of the substrate of the DPC, and Figure 4(c) is a bottom view of the substrate of the DPC.

[0037] Figure 5 is a schematic diagram of the three-dimensional coaxial transmission structure of a high-reliability, high-power, three-dimensional heterogeneous integrated radio frequency antenna microsystem. Figure 5(a) is a side view of the three-dimensional coaxial transmission structure, Figure 5(b) is a top view of the three-dimensional coaxial transmission structure, and Figure 5(c) is a bottom view of the three-dimensional coaxial transmission structure.

[0038] Figure 6 is a schematic diagram of the three-dimensional packaging frame structure of a high-reliability, high-power, three-dimensional heterogeneous integrated radio frequency antenna microsystem. Figure 6(a) is a side view of the three-dimensional packaging frame structure, Figure 6(b) is a top view of the three-dimensional packaging frame structure, and Figure 6(c) is a bottom view of the three-dimensional packaging frame structure.

[0039] Figure 7 is a schematic diagram of a SiC adapter board for a high-reliability, high-power, three-dimensional heterogeneous integrated radio frequency antenna microsystem. Specifically, Figure 7(a) is a side view of the first-stage SiC adapter board, Figure 7(b) is a top view of the first-stage SiC adapter board, Figure 7(c) is a side view of the second-stage SiC adapter board, and Figure 7(d) is a top view of the second-stage SiC adapter board.

[0040] Figure 8 is a schematic diagram of a silicon-based Fan-out integrated microsystem of a high-reliability, high-power, three-dimensional heterogeneous RF antenna. Figure 8(a) is a side view of the silicon-based Fan-out, and Figure 8(b) is a bottom view of the silicon-based Fan-out.

[0041] Figure 9 is a schematic diagram of a 2.5Dx1 architecture of a high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem.

[0042] Figure 10 is a schematic diagram of a 2.5Dx2 architecture of a high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem.

[0043] Figure 11 is a schematic diagram of a three-dimensional electromagnetic shielding structure of a high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem.

[0044] Figure 12 is a schematic diagram of a high-power heat dissipation path of a high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem.

[0045] Figure 13 is a schematic diagram of a power heat dissipation path in a high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem.

[0046] Figure 14 is a schematic diagram of BGA solder balls of a high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem, wherein Figure 14(a) is a schematic diagram of a side view of the BGA solder balls, Figure 14(b) is a schematic diagram of a top view of the BGA solder balls, and Figure 14(c) is a schematic diagram of a bottom view of the BGA solder balls.

[0047] wherein the reference numerals are as follows: 1-DPC lower substrate, 2-DPC middle substrate, 3-DPC upper substrate, 4-thick copper wiring, 5-TCV, 6-outer conductor of a three-dimensional coaxial transmission structure, 7-inner conductor of a three-dimensional coaxial transmission structure, 8-air medium, 9-three-dimensional coaxial transmission structure, 10-three-dimensional packaging frame structure, 11-first-stage SiC adapter plate, 12-second-stage SiC adapter plate, 13-RDL, 14-power amplifier bare chip, 15-multifunction bare chip, 16-power management bare chip, 17-receiving bare chip, 18-silicon-based Fan-out, 19-IPD, 20-high-thermal-conductivity conductive glue for high power, 21-high-thermal-conductivity conductive glue for medium power, 22-micro-bumps of a silicon-based Fan-out, 23-flip-chip micro-bumps, 24-wire bonding, 25-BGA solder balls of a DPC lower substrate, 26-BGA solder balls of a DPC upper substrate. DETAILED DESCRIPTION

[0048] In order to make the objectives, technical solutions and advantages of the present application clearer, the present application is described in detail below with reference to the drawings and specific embodiments.

[0049] In combination with Figure 1The high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem comprises 26 parts, including a DPC lower substrate 1, a DPC middle substrate 2, a DPC upper substrate 3, thick copper wiring 4, a TCV 5, a three-dimensional coaxial transmission structure outer conductor 6, a three-dimensional coaxial transmission structure inner conductor 7, air medium 8, a three-dimensional coaxial transmission structure 9, a three-dimensional packaging frame structure 10, a first SiC adapter plate 11, a second SiC adapter plate 12, RDL 13, a power amplifier bare chip 14, a multifunction bare chip 15, a power management bare chip 16, a receiving bare chip 17, a silicon-based Fan-out 18, an IPD 19, high-power high-thermal-conductivity conductive glue 20, medium-power high-thermal-conductivity conductive glue 21, a silicon-based Fan-out micro bump 22, a flip-chip micro bump 23, wire bonding 24, DPC lower substrate BGA solder balls 25 and DPC upper substrate BGA solder balls 26.

[0050] As shown in FIGS. 2, 3 and 4, the high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem adopts DPC substrate technology, and realizes the integrated three-dimensional heterogeneous integration of the microsystem based on a five-layer stacked integrated packaging architecture of three levels of DPC substrates, i.e., the DPC lower substrate 1, the DPC middle substrate 2 and the DPC upper substrate 3.

[0051] The high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem adopts thick copper wiring technology, and realizes the interconnection and rewiring of the three levels of DPC substrates, i.e., the DPC lower substrate 1, the DPC middle substrate 2 and the DPC upper substrate 3, through the high-density thick copper wiring 4 structure.

[0052] The high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem adopts TCV technology, and respectively performs signal vertical transmission on the three levels of DPC substrates, i.e., the DPC lower substrate 1, the DPC middle substrate 2 and the DPC upper substrate 3, through the TCV 5 structure.

[0053] As shown in FIG. 5, the high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem adopts DPC direct copper plating technology, directly electroplating copper-based three-dimensional packaging frame structure 10 on the top of the DPC lower substrate 1 and the bottom of the DPC upper substrate 3 to form an air-tight packaging frame of the microsystem. The height of the three-dimensional packaging frame structure 10 is flexibly adjusted according to the design, and the requirement of a low profile of a phased array antenna is met to the greatest extent.

[0054] As shown in FIG. 6, the high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem adopts DPC direct copper plating technology, directly electroplating copper-based three-dimensional packaging frame structure 10 on the top of the DPC lower substrate 1 and the bottom of the DPC upper substrate 3 to form an air-tight packaging frame of the microsystem. The height of the three-dimensional packaging frame structure 10 is flexibly adjusted according to the design, and the requirement of a low profile of a phased array antenna is met to the greatest extent.

[0055] As shown in Figure 7, the high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem of the application adopts SiC adapter plate technology, and realizes 2.5D*2 ultra-high density mixed three-dimensional stacking architecture through two levels of SiC adapter plates, i.e., the first level SiC adapter plate 11 and the second level SiC adapter plate 12.

[0056] The high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem of the application adopts RDL technology, and realizes the interconnection and rewiring of the first level SiC adapter plate 11 and the second level SiC adapter plate 12 through the high-density RDL 13 wiring structure.

[0057] As shown in Figure 8, the high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem of the application adopts silicon-based Fan-out technology, and converts the multifunctional bare chip 15 into a silicon-based flip-chip type packaging form through a silicon-based Fan-out 18 process.

[0058] The high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem of the application adopts IPD technology, and makes passive devices into integrated passive devices 19 through an IPD 19 process.

[0059] The high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem of the application adopts high-thermal-conductivity conductive adhesive technology, and based on a bonding process, assembles the power amplifier bare chip 14 to the upper side of the DPC lower substrate 1 through high-thermal-conductivity conductive adhesive 20 of high power, assembles the first level SiC adapter plate 11 to the upper side of the DPC lower substrate 1 through high-thermal-conductivity conductive adhesive 21 of medium power, stacks the second level SiC adapter plate 12 on the upper side of the silicon-based Fan-out 18, assembles the receiving bare chip 17 to the lower side of the DPC upper substrate 3, and assembles the integrated passive device 19 to the upper side of the DPC lower substrate 1, the upper / lower side of the DPC middle substrate 2, and the lower side of the DPC upper substrate 3. The assembly position of the receiving bare chip 17 is as close as possible to the antenna interface at the top of the DPC upper substrate 3, so as to reduce transmission loss and maximize the performance of the microsystem.

[0060] The high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem of the application adopts flip-chip technology, and based on a flip-chip process, assembles the silicon-based Fan-out 18 to the upper side of the first level SiC adapter plate 11 through silicon-based Fan-out micro bumps 22, and assembles the power management bare chip 16 to the upper side of the second level SiC adapter plate 12 through flip-chip micro bumps 23.

[0061] The high-reliability, high-power three-dimensional heterogeneous integrated radio frequency antenna microsystem of the present invention adopts wire bonding technology. Through wire bonding process 24, the signal interconnection between the power amplifier bare chip 14 and the lower DPC substrate 1, the first-stage SiC adapter board 11, and the second-stage SiC adapter board 12 is realized, and the interconnection between the receiving bare chip 17 and the upper DPC substrate 3 is realized.

[0062] like Figure 9 As shown, the high-reliability, high-power three-dimensional heterogeneous integrated radio frequency antenna microsystem of the present invention adopts 2.5D advanced packaging technology. It forms a 2.5D×1 architecture through "silicon-based Fan-out18 multi-functional bare chip → first-level SiC adapter board 11 → DPC lower substrate 1", which fully explores the integration potential in the Z direction and improves the integration density of the microsystem.

[0063] like Figure 10 As shown, the high-reliability, high-power, three-dimensional heterogeneous integrated radio frequency antenna microsystem of the present invention adopts 2.5D advanced packaging technology. It forms a 2.5D×2 architecture through "power management bare chip 16 → second-level SiC adapter board 12 → silicon-based Fan-out 18 multi-functional bare chip", which fully explores the integration potential in the Z direction and improves the integration density of the microsystem.

[0064] The high-reliability, high-power, three-dimensional heterogeneous integrated radio frequency antenna microsystem of the present invention adopts gold-tin alloy technology. Through the gold-tin alloy sealing process, the copper-based three-dimensional packaging structure 9 / 10 of the upper substrate 3 of the DPC is stacked on top of the middle substrate 2 of the DPC, and the copper-based three-dimensional packaging structure 9 / 10 of the lower substrate 1 of the DPC is stacked below the middle substrate 2 of the DPC. This enables the vertical transmission of high-power radio frequency signals between the three DPC substrates, namely the lower substrate 1, the middle substrate 2, and the upper substrate 3, forming a final complete integrated hermetically sealed package structure.

[0065] like Figure 11 As shown, the high-reliability, high-power three-dimensional heterogeneous integrated radio frequency antenna microsystem of the present invention constructs a three-dimensional electromagnetic shielding structure for the internal radio frequency circuit of the microsystem through a copper-based three-dimensional encapsulation frame structure 10 and a three-dimensional coaxial transmission structure 9, thereby achieving electromagnetic compatibility of the microsystem.

[0066] like Figure 12As shown in the figure, the high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem of the application assembles the power amplifier bare chip 14 to the upper side of the DPC lower substrate 1 through the high-power high-thermal-conductivity conductive glue 20; adopts the DPC direct copper plating technology to directly electroplate the copper-based three-dimensional packaging frame structure 10 and the three-dimensional coaxial transmission structure 9 on the upper side of the DPC lower substrate 1 and the lower side of the DPC upper substrate 3, and forms a characteristic process high-power heat dissipation path from the power amplifier bare chip 14 to the DPC substrate thick copper layer 4 to the copper-based three-dimensional structure 9 / 10, which solves the pain point of the traditional radio frequency microsystem in the high-power radio frequency signal heat dissipation.

[0067] As shown in the figure, Figure 13 As shown in the figure, the high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem of the application assembles the power amplifier bare chip 14 to the upper side of the DPC lower substrate 1 through the high-power high-thermal-conductivity conductive glue 20; adopts the DPC direct copper plating technology to directly electroplate the copper-based three-dimensional packaging frame structure 10 and the three-dimensional coaxial transmission structure 9 on the upper side of the DPC lower substrate 1 and the lower side of the DPC upper substrate 3, and forms a characteristic process high-power heat dissipation path from the power amplifier bare chip 14 to the DPC substrate thick copper layer 4 to the copper-based three-dimensional structure 9 / 10, which solves the pain point of the traditional radio frequency microsystem in the high-power radio frequency signal heat dissipation.

[0068] As shown in the figure, the high-reliability high-power three-dimensional heterogeneous integrated radio frequency antenna integrated microsystem of the application assembles the power amplifier bare chip 14 to the upper side of the DPC lower substrate 1 through the high-power high-thermal-conductivity conductive glue 20; adopts the DPC direct copper plating technology to directly electroplate the copper-based three-dimensional packaging frame structure 10 and the three-dimensional coaxial transmission structure 9 on the upper side of the DPC lower substrate 1 and the lower side of the DPC upper substrate 3, and forms a characteristic process high-power heat dissipation path from the power amplifier bare chip 14 to the DPC substrate thick copper layer 4 to the copper-based three-dimensional structure 9 / 10, which solves the pain point of the traditional radio frequency microsystem in the high-power radio frequency signal heat dissipation.

[0069] The high-reliability, high-power, three-dimensional heterogeneous integrated radio frequency antenna microsystem provided by this invention is based on a 5-layer stacked integrated packaging architecture of upper / middle / lower 3-level DPC substrates and a 2.5D×2 ultra-high-density hybrid three-dimensional stacked architecture of two-level SiC adapter boards. It integrates radio frequency circuitry and antenna interfaces, employs a direct copper-plated three-dimensional coaxial transmission structure and a three-dimensional packaging frame structure on the DPC substrate, and combines an innovative high-power heat dissipation scheme. It fully leverages the advantages of various materials such as copper-based, silicon-based, and compound-based materials to achieve three-dimensional heterogeneous integration of the microsystem. Combining the advantages of DPC substrates 1 / 2 / 3, thick copper wiring 4, TCV5, SiC adapter boards 11 / 12, RDL13, silicon-based fan-out 18, IPD 19, high thermal and electrical conductivity adhesive 20 / 21, micro-bumps 22 / 23, wire bonding 24, and BGA 25 / 26 technologies, it achieves multiple functions and can cover the DC-40GHz frequency band: (1 (1) Using DPC substrate 1 / 2 / 3 technology, a 5-layer stacked integrated packaging architecture based on upper / middle / lower 3-level DPC substrates is used to realize the integrated three-dimensional heterogeneous integration of microsystems; (2) Using thick copper wiring 4 technology, the interconnection and rewiring of upper / middle / lower 3-level DPC substrates 1 / 2 / 3 are realized through a high-density thick copper wiring 4 structure; (3) Using TCV5 technology, the upper / middle / lower 3-level DPC substrates 1 / 2 / 3 are vertically transmitted through the TCV5 structure; (4) Using DPC direct copper plating technology, copper-based three-dimensional coaxial transmission structure 9 is directly electroplated above the lower DPC substrate 1 and below the upper DPC substrate 3 to realize the vertical transmission of high-power radio frequency signals of DPC substrates, and copper-based three-dimensional packaging frame 10 structure is directly electroplated above the lower DPC substrate 1 and below the upper DPC substrate 3 to form a hermetically sealed packaging frame; (5) Using SiC adapter board 11 / 12 technology, 2.5D x 2 ultra-high density hybrid three-dimensional stacking architecture; (6) using RDL13 technology, through high-density RDL13 wiring structure to realize the interconnection and re-wiring of SiC adapter board 11 / 12; (7) using silicon-based Fan-out 18 technology, through silicon-based Fan-out 18 process, converting multi-functional bare chip 15 into silicon-based flip-chip type packaging form; (8) using IPD 19 technology, through IPD process, manufacturing passive devices into integrated passive devices 19; (9) using high thermal conductive conductive adhesive 20 / 21 technology, through bonding process, assembling power amplifier bare chip 14, first-stage SiC adapter board 11 to the upper of DPC lower substrate 1, second-stage SiC adapter board 12 is stacked on the upper of silicon-based Fan-out 18 multi-functional bare chip, receiving bare chip 17 is assembled to the lower of DPC upper substrate 3, integrated passive devices 19 is assembled to the surface of 3-stage DPC substrate 1 / 2 / 3; (10) using flip-chip 22 / 23 technology, through flip-chip process, assembling silicon-based Fan-out 18 multi-functional bare chip to the upper of first-stage SiC adapter board 11, power management bare chip 16 is assembled to the upper of second-stage SiC adapter board 12; (11) using wire bonding 24 technology, through wire bonding process, realizing the interconnection between power amplifier bare chip 14 and DPC lower substrate 1, two-stage SiC adapter board 11 / 12, and the interconnection between receiving bare chip 17 and DPC upper substrate 3; (12) using gold-tin alloy technology, through gold-tin alloy capping process, stacking copper-based three-dimensional packaging structure 9 / 10 of DPC upper substrate 3 to the upper of DPC middle substrate 2, stacking copper-based three-dimensional packaging structure 9 / 10 of DPC lower substrate 1 to the lower of DPC middle substrate 2, realizing the vertical transmission of high-power radio frequency signal between upper / middle / lower 3-stage DPC substrate 1 / 2 / 3, forming the final complete integrated hermetic package structure; (13) through copper-based three-dimensional packaging frame structure 10 and three-dimensional coaxial transmission structure 9, constructing three-dimensional electromagnetic shielding structure of micro-system internal radio frequency circuit; (14) through “power amplifier bare chip 14→DPC substrate thick copper layer 4→copper-based three-dimensional structure 9 / 10”, forming a characteristic process of high-power heat dissipation path; (15) assembling radio frequency transmitting circuit and two-stage high thermal conductive SiC adapter board 11 / 12 to the upper of DPC lower substrate 1 according to 2.5D x 2 5-layer hybrid three-dimensional stacking architecture, forming a medium-power heat dissipation path; (16) using BGA technology, through BGA ball grid array, fan-out of radio frequency beam signal and power control signal under DPC lower substrate 1, fan-out of antenna interface above DPC upper substrate 3; (17) using ball planting technology, through DPC lower substrate BGA solder ball 25, fan-out of BGA pad of DPC lower substrate 1, through DPC upper substrate BGA solder ball 26, fan-out of BGA pad of DPC upper substrate 3.

[0070] The examples described in the present application are merely to describe the preferred embodiments of the present application, and are not intended to limit the concept and scope of the present application. Without departing from the design idea of the present application, various modifications and improvements of the technical solutions of the present application made by the engineering technicians in the field shall fall within the protection scope of the present application.

Claims

1. A high-reliability, high-power, three-dimensional heterogeneous integrated radio frequency antenna microsystem, characterized in that, include: DPC substrate, copper-based three-dimensional structure, two-stage SiC adapter board, bare chip, RF circuit, passive device and antenna interface; The DPC substrate includes a DPC upper substrate, a DPC middle substrate, and a DPC lower substrate, which are used to realize the integrated three-dimensional heterogeneous integration of microsystems through a 5-layer stacked integrated packaging architecture. The copper-based three-dimensional structure includes a three-dimensional coaxial transmission structure and a three-dimensional packaging frame structure, which are used to realize the vertical transmission of high-power radio frequency signals and the hermetically sealed packaging frame for microsystems. The two-stage SiC adapter board is a high thermal conductivity SiC adapter board, including: a first-stage SiC adapter board and a second-stage SiC adapter board, used to realize a 2.5D×2 5-layer ultra-high density hybrid three-dimensional stacked architecture; Bare chips include: silicon-based fan-out multi-function bare chips, power management bare chips, power amplifier bare chips, and receiver bare chips; Radio frequency (RF) circuits include: RF transmitting circuits and RF receiving circuits; The RF transmitting circuit and two-stage SiC adapter boards are assembled on top of the DPC lower substrate in a 2.5D×2 five-layer hybrid three-dimensional stacked architecture; the first-stage SiC adapter board and the power amplifier bare chip are directly stacked on top of the DPC lower substrate; the silicon-based fan-out multi-functional bare chip is assembled on top of the first-stage SiC adapter board via flip-chip bonding; the second-stage SiC adapter board is stacked on top of the silicon-based fan-out multi-functional bare chip; the power management bare chip is assembled on top of the second-stage SiC adapter board via flip-chip bonding; the power amplifier bare chip is interconnected with the DPC lower substrate and the two-stage SiC adapter boards via wire bonding; the RF receiving circuit is assembled below the DPC upper substrate and interconnected with the DPC upper substrate via wire bonding; the antenna interface fans out from the top of the DPC upper substrate.

2. The system according to claim 1, characterized in that, A copper-based three-dimensional coaxial transmission structure is directly electroplated above the lower substrate and below the upper substrate of the DPC to achieve vertical transmission of high-power radio frequency signals. A copper-based three-dimensional packaging frame structure is directly electroplated above the lower substrate and below the upper substrate of the DPC to achieve a hermetically sealed packaging frame for the microsystem. Through the copper-based three-dimensional packaging frame structure and the three-dimensional coaxial transmission structure, a three-dimensional electromagnetic shielding structure for the internal radio frequency circuit of the microsystem is constructed. A high-power heat dissipation path is formed from the bare chip to the thick copper layer of the DPC substrate to the copper-based three-dimensional structure.

3. The system according to claim 1, characterized in that, Thick copper wiring technology is adopted to realize the interconnection and rewiring of DPC substrates through a high-density thick copper wiring structure; vertical signal transmission is performed on DPC substrates through TCV structure.

4. The system according to claim 1, characterized in that, The process involves converting a multi-functional bare chip into a silicon-based flip-chip package using a silicon-based fan-out process. Flip-chip bonding is then used to assemble the multi-functional bare chip onto the first-stage SiC adapter board. The power management bare chip is then assembled onto the second-stage SiC adapter board. High thermal and electrical conductivity adhesive is used to bond the power amplifier bare chip and the first-stage SiC adapter board onto the lower DPC substrate. The second-stage SiC adapter board is stacked on top of the multi-functional bare chip. The RF receiver circuitry is assembled below the upper DPC substrate, and integrated passive devices are assembled onto the surface of the DPC substrate. Wire bonding is used to interconnect the power amplifier bare chip with the lower DPC substrate and the two-stage SiC adapter boards, as well as the receiver bare chip with the upper DPC substrate.

5. The system according to claim 1, characterized in that, The IPD process is used to fabricate passive devices into integrated passive devices.

6. The system according to claim 1, characterized in that, RDL technology is used to achieve interconnection and rewiring of SiC adapter boards through a high-density RDL wiring structure.

7. The system according to claim 1, characterized in that, By employing gold-tin alloy technology and using a gold-tin alloy sealing process, the copper-based three-dimensional packaging structure of the upper substrate of the DPC is stacked on top of the middle substrate of the DPC, and the copper-based three-dimensional packaging structure of the lower substrate of the DPC is stacked on the bottom of the middle substrate of the DPC. This enables the vertical transmission of high-power radio frequency signals between the DPC substrates, forming a final complete integrated hermetically sealed package structure.

8. The system according to claim 1, characterized in that, The RF transmitting circuit and the two-stage SiC adapter board are assembled on top of the DPC lower substrate in a 2.5D×2 hybrid three-dimensional stacked architecture of 5 layers, forming a medium-power heat dissipation path.

9. The system according to claim 1, characterized in that, Using BGA technology, the radio frequency beam signal and power control signal below the DPC lower substrate are fanned out through the BGA ball grid array, and the antenna interface above the DPC upper substrate is fanned out. Using ball-mounting technology, the BGA pads of the DPC lower substrate are fanned out through the BGA solder balls of the DPC lower substrate, and the BGA pads of the DPC upper substrate are fanned out through the BGA solder balls of the DPC upper substrate.

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