A physical vapor deposition system with an intelligent temperature control system

Abstract

The present invention relates to a physical vapor deposition system with an intelligent temperature control system applied to the technical field of semiconductor chemical vapor deposition. The system comprises a carrying platform, a wafer disc ring, a heat-conducting film pocket, a deposition wafer disk, a lifting hole, a lifting gas bucket, a heating mesh plate and a gas circulation pump. The present invention wraps and installs the deposition wafer disk through the heat-conducting film pocket, heats the lower non-reactive surface of the deposition wafer disk through the heating mesh plate, and adjusts the height of the lifting gas bucket to adjust the heated distance of the lower non-reactive surface of the deposition wafer disk, so as to facilitate the intelligent temperature control of the deposition wafer disk. The temperature-controlled gas inside the carrying platform is circulated by the gas circulation pump, and the temperature-controlled gas passes through the heating mesh plate. Through the heat conduction capacity of the heat-conducting film pocket, the non-reactive surface and edge of the deposition wafer disk are uniformly heated, so that the quality of wafer vapor deposition is effectively improved, thereby effectively improving the yield rate of the generated wafers.

Description

Technical Field

[0001] The present invention relates to a physical vapor deposition system, in particular to a physical vapor deposition system with an intelligent temperature control system applied to the technical field of semiconductor chemical vapor deposition. Background Art

[0002] Chemical vapor deposition technology usually introduces gaseous raw materials into a deposition chamber, forms a new substance through a series of complex processes, and deposits it on the surface of the substrate. Typical chemical vapor deposition CVD and metal organic chemical vapor deposition MOCVD reactors require rotating the carrier plate with the processed substrate during deposition to provide a uniform deposition effect for the substrate. In the high-temperature and low-pressure vapor deposition process, the contact between the reaction surface of the wafer and the reaction gas needs to be evenly heated, otherwise it will directly affect the quality of the film formation.

[0003] The specification of Chinese invention patent CN202023225761.7 discloses the "Vapor Deposition Wafer Temperature Control Structure". The vapor deposition wafer temperature control structure provided uses temperature-controlled gas to pass through the edge or non-reactive surface of the wafer during the heating process of the wafer to regulate the heat distribution of the wafer. The temperature control distance is formed between the disc and the wafer. The disc is raised and lowered to change the heating distance, or the wafer is rotated by the rotation of the disc to make the radiation heating process of the non-reactive surface more uniform, and at the same time make the contact between the temperature-controlled gas and the edge of the wafer more even.

[0004] The heating method for wafers in the vapor deposition reaction chamber is mostly to install a heating plate or heater on the non-reactive surface of the wafer to increase the working temperature of the wafer through thermal radiation. The wafer is prone to uneven heating and excessive warping, and the outer edge of the wafer is not within the direct heating range, which is more likely to cause uneven heating of the wafer, thereby affecting the quality of wafer vapor deposition. Summary of the invention

[0005] In view of the above-mentioned prior art, the technical problem to be solved by the present invention is that the wafer is easily subjected to uneven heating and excessive warping, and the outer edge of the wafer is not within the direct heating range, which makes it more likely to cause uneven heating of the wafer, thereby affecting the quality of wafer vapor deposition.

[0006] In order to solve the above problems, the present invention provides a physical vapor deposition system with an intelligent temperature control system, comprising a hollow carrying platform, the upper surface of the carrying platform is fixedly provided with a wafer disc ring in an annular shape, the top of the wafer disc ring is fixedly connected with a heat-conducting film pocket, the inside of the heat-conducting film pocket is wrapped with a deposition wafer disc, the lower surface of the carrying platform is provided with a lifting hole, the lifting hole is vertically corresponding to the wafer disc ring, and the lifting hole is sleeved with a lifting gas bucket inside, the top outer ring of the lifting gas bucket is fixedly connected with a piston ring, the piston ring is slidably connected to the inner wall of the lifting hole, the lifting gas bucket is fixedly connected with a heating mesh plate inside, and the heating mesh plate is vertically corresponding to the heat-conducting film pocket;

[0007] A gas circulation pump is fixedly connected to the middle of the lower surface of the carrying platform, the input end of the gas circulation pump is connected to the inside of the carrying platform, and an air guide pipe is fixedly connected between the output end of the gas circulation pump and the bottom end of the lifting gas bucket, and a dispersion turning wheel is rotatably connected to the top of the connecting end of the air guide pipe and the lifting gas bucket, and the dispersion turning wheel is vertically corresponding to the heating mesh plate.

[0008] In the above-mentioned physical vapor deposition system with an intelligent temperature control system, a thermally conductive film bag is used to wrap and install the deposition wafer disk, and the heat conduction ability of the thermally conductive film bag is used to achieve uniform heating of the non-reactive surface and edge of the deposition wafer disk, thereby effectively improving the quality of wafer vapor deposition and effectively improving the yield rate of the generated wafers.

[0009] As a further improvement of the present application, a lifting control disk is fixedly connected to the bottom of the lifting gas bucket, a lifting cylinder is fixedly connected to the outside of the bottom of the carrying platform, the output end of the lifting cylinder is fixedly connected to the lifting control disk, and the lifting control disk is driven by the lifting cylinder to realize synchronous lifting movement of the annularly distributed lifting gas buckets, which is convenient for temperature regulation of the phase deposition structure on the carrying platform.

[0010] As a further improvement of the present application, one end of the carrying platform is fixedly connected to a buffer storage bin, and the top of the buffer storage bin is movably connected to a buffer piston group. The telescopic movement of the lifting cylinder corresponds to the telescopic movement of the buffer piston group. When the lifting gas bucket performs a lifting movement in the lifting hole, the buffer piston group in the buffer storage bin performs synchronous telescopic movement, thereby achieving dynamic balance of the internal space of the carrying platform, thereby effectively stabilizing the air pressure of the temperature control gas.

[0011] As a further improvement of the present application, the bottom of the inner ring of the wafer disc ring is set in an inclined surface, and the bottom of the inner ring of the wafer disc ring is fixed with supporting blocks in a ring shape, and the supporting blocks correspond to the outer ring of the deposition wafer disk. The inclined surface of the bottom of the inner ring of the wafer disc ring is used to achieve the contact of the thermal conductive film bag wrapping the outer ring of the deposition wafer disk with the temperature control gas, thereby effectively improving the heating effect of the outer ring of the deposition wafer disk, effectively improving the uniform heating of the deposition wafer disk, and facilitating the intelligent temperature control adjustment of the vapor deposition system.

[0012] As another improvement of the present application, a protective ring film is fixedly connected to the bottom of the outer ring of the thermal conductive film pocket, and the protective ring film is in corresponding contact with the support block. The protective ring film is used to provide protection for the outer ring of the thermal conductive film pocket, effectively avoiding friction damage between the thermal conductive film pocket and the support block.

[0013] As another improvement supplement of the present application, the protective ring film is made of wear-resistant silicone material, and the thermally conductive film pocket is made of thermally conductive silicone material. The protective ring film made of wear-resistant silicone material has good wear resistance, which effectively improves the protection effect of the thermally conductive film pocket, and the thermally conductive film pocket made of thermally conductive silicone material has good thermal conductivity, which effectively improves the heat transfer effect of the thermally conductive film pocket.

[0014] As another improvement supplement to the present application, a storage ring groove is opened on the upper surface of the wafer disc ring, the outer ring of the protective ring film is fixedly connected to the outer ring edge of the storage ring groove, and the interior of the storage ring groove is provided with a top ring, which contacts the protective ring film. The top ring in the storage ring groove rises to lift up and contact the protective ring film, thereby realizing the overall rise of the thermal conductive film pocket, thereby exposing the deposited wafer disc wrapped in the thermal conductive film pocket, making it easier to take out the deposited wafer disc.

[0015] As another improvement of the present application, a support tube is fixedly connected to the bottom of the storage ring groove, and the bottom end of the support tube is fixedly connected to the upper opening of the lifting hole. The support tube effectively improves the supporting stability of the storage ring groove and effectively prevents the load-bearing platform from collapsing.

[0016] As another improvement supplement to the present application, a telescopic column is inserted into the interior of the support tube, and the top end of the telescopic column is fixedly connected to the ejection ring. The telescopic column in the support tube is used to push the ejection ring to facilitate the ejection ring to rise and leave the storage ring groove.

[0017] As another improvement supplement of the present application, the bottom end of the telescopic column is fixedly connected with a lifting ring, the lifting ring is sleeved with the lifting hole, the top of the piston ring vertically corresponds to the lifting ring, and when taking out the deposited wafer disk, the lifting gas bucket rises to the maximum height, so that the piston ring outside the lifting gas bucket contacts and drives the lifting ring to rise, thereby realizing the rising movement of the ring through the telescopic column.

[0018] In summary, the present invention wraps and installs the deposition wafer disk through the heat-conductive film bag, and the heating mesh plate on the lifting gas bucket heats the lower non-reactive surface of the deposition wafer disk, and by adjusting the height of the lifting gas bucket, the heated distance between the heating mesh plate and the lower non-reactive surface of the deposition wafer disk is adjusted, which is convenient for intelligent temperature control of the deposition wafer disk, and the temperature-controlled gas inside the supporting platform is circulated by the gas circulation pump, and the temperature-controlled gas passes through the heating mesh plate, and then cooperates with the heat-conductive film bag to wrap the deposition wafer disk. Through the heat conduction capacity of the heat-conductive film bag, the non-reactive surface and edge of the deposition wafer disk are evenly heated, so that the quality of wafer vapor deposition is effectively improved, thereby effectively improving the yield rate of the generated wafers. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 This is a sectional three-dimensional structural diagram of the first embodiment of the present application;

[0020] Figure 2 This is a three-dimensional structural diagram of the first embodiment of the present application;

[0021] Figure 3 This is a cross-sectional view of the lifting hole and the lifting gas bucket of the first embodiment of the present application;

[0022] Figure 4 This is a demonstration diagram of the descending movement of the lifting gas bucket in the first embodiment of the present application;

[0023] Figure 5 This is a bottom-up stereoscopic structural diagram of the lifting hole in the first embodiment of the present application;

[0024] Figure 6 This is a demonstration diagram of the telescopic movement of the buffer piston group in the first embodiment of the present application;

[0025] Figure 7 This is a three-dimensional structural diagram of the heat-conducting film pocket and the protective ring film in the first embodiment of the present application;

[0026] Figure 8 This is an enlarged cross-sectional view of a wafer disk ring according to the first embodiment of the present application;

[0027] Fig. 9 This is a bottom-up stereoscopic structural diagram of the support tube, telescopic column and lifting ring of the second embodiment of the present application;

[0028] Fig.10 This is a demonstration diagram of the second embodiment of the present application, in which the top ring rises and lifts up the thermal conductive film pocket.

[0029] Description of the numbers in the figure:

[0030] 1. Carrying platform; 101. Wafer disc ring; 102. Thermal conductive film pocket; 103. Deposition wafer disc; 104. Lifting hole; 105. Support block; 106. Protective ring film; 2. Lifting air bucket; 201. Piston ring; 202. Heating screen; 203. Gas circulation pump; 204. Air guide tube; 205. Dispersing turning wheel; 3. Lifting control plate; 301. Lifting cylinder; 302. Buffer storage bin; 303. Buffer piston assembly; 4. Storage ring groove; 401. Ejecting ring; 402. Support tube; 403. Telescopic column; 404. Lifting ring. DETAILED DESCRIPTION

[0031] Two implementation modes of the present application are described in detail below with reference to the accompanying drawings.

[0032] The first implementation method:

[0033] Figure 1-4 It is shown that a physical vapor deposition system with an intelligent temperature control system comprises a hollow carrying platform 1, a wafer disc ring 101 is fixedly distributed in an annular shape on the upper surface of the carrying platform 1, a heat-conducting film pocket 102 is fixedly connected to the top of the wafer disc ring 101, a deposition wafer disc 103 is wrapped inside the heat-conducting film pocket 102, a lifting hole 104 is opened on the lower surface of the carrying platform 1, the lifting hole 104 corresponds vertically to the wafer disc ring 101, and a lifting gas bucket 2 is sleeved inside the lifting hole 104, a heating mesh plate 202 is fixedly connected inside the lifting gas bucket 2, and the heating mesh plate 202 corresponds vertically to the heat-conducting film pocket 102;

[0034] The deposition wafer disk 103 is placed in the thermally conductive film bag 102 for wrapping and installation. The heating mesh plate 202 on the lifting gas bucket 2 heats the lower non-reactive surface of the deposition wafer disk 103. The height of the lifting gas bucket 2 is adjusted to adjust the heating distance between the heating mesh plate 202 and the lower non-reactive surface of the deposition wafer disk 103, which is convenient for intelligent temperature control of the deposition wafer disk 103. Through the heat conduction capacity of the thermally conductive film bag 102, the non-reactive surface and edge of the deposition wafer disk 103 are evenly heated, so that the quality of wafer vapor deposition is effectively improved, thereby effectively improving the yield rate of the generated wafers.

[0035] Figure 1 and Figure 5-6 As shown, the top outer ring of the lifting gas bucket 2 is fixedly connected with a piston ring 201, and the piston ring 201 is slidably connected to the inner wall of the lifting hole 104. The bottom of the lifting gas bucket 2 is fixedly connected with a lifting control disk 3. The bottom outer part of the carrying platform 1 is fixedly connected with a lifting cylinder 301. The output end of the lifting cylinder 301 is fixedly connected to the lifting control disk 3. The lifting cylinder 301 is used to drive the lifting control disk 3 to achieve synchronous lifting and lowering movement of the annularly distributed lifting gas bucket 2, which is convenient for temperature adjustment of the phase deposition structure on the carrying platform 1. One end of the carrying platform 1 is fixedly connected with a buffer storage bin 302, and the top of the buffer storage bin 302 is movably connected with a buffer piston group 303. The telescopic movement of the lifting cylinder 301 corresponds to the telescopic movement of the buffer piston group 303. When the lifting gas bucket 2 is lifted and lowered in the lifting hole 104, the buffer piston group 303 in the buffer storage bin 302 is synchronously extended and retracted to achieve dynamic balance of the internal space of the carrying platform 1, thereby effectively stabilizing the air pressure of the temperature-controlled gas.

[0036] The lifting cylinder 301 is used to drive the lifting control plate 3 to move up and down, thereby synchronously driving the lifting and lowering movements of multiple lifting gas buckets 2, which is convenient for adjusting the temperature of the phase deposition structure on the supporting platform 1. When the lifting gas bucket 2 moves up and down, the piston ring 201 on the lifting gas bucket 2 slides on the inner wall of the lifting hole 104, thereby changing the internal space of the lifting hole 104, and the buffer piston group 303 in the buffer storage bin 302 is synchronously extended and retracted corresponding to the lifting and lowering of the lifting gas bucket 2, and the space of the buffer storage bin 302 is used to change the change of the internal space of the buffer lifting hole 104, thereby effectively stabilizing the air pressure of the temperature control gas.

[0037] Figure 4 and Figure 8 As shown, a gas circulation pump 203 is fixedly connected to the middle of the lower surface of the carrying platform 1, the input end of the gas circulation pump 203 is connected to the inside of the carrying platform 1, and an air guide pipe 204 is fixedly connected between the output end of the gas circulation pump 203 and the bottom end of the lifting gas bucket 2, and a dispersion turning wheel 205 is rotatably connected to the top of the connection end of the gas guide pipe 204 and the lifting gas bucket 2, and the dispersion turning wheel 205 is vertically corresponding to the heating mesh plate 202, and the bottom of the inner ring of the wafer disc ring 101 is set in an inclined surface , and a support block 105 is fixedly distributed in a ring shape at the bottom of the inner ring of the wafer disc ring 101, and the support block 105 corresponds to the outer ring of the deposition wafer disc 103. The inclined surface of the bottom of the inner ring of the wafer disc ring 101 is used to achieve the contact of the heat-conducting film pocket 102 wrapping the outer ring of the deposition wafer disc 103 with the temperature-controlled gas, thereby effectively improving the heating effect of the outer ring of the deposition wafer disc 103, effectively improving the uniform heating of the deposition wafer disc 103, and facilitating the intelligent temperature control adjustment of the vapor deposition system;

[0038] The temperature-controlled gas inside the carrier platform 1 is circulated by the gas circulation pump 203, and the temperature-controlled gas is transported to the lifting gas bucket 2 through the gas guide pipe 204. The subsequent temperature-controlled gas passes through the heating mesh plate 202 to achieve the temperature increase of the temperature-controlled gas. The temperature-controlled gas fully contacts the thermal conductive film pocket 102 to heat the deposited wafer disk 103. The subsequent temperature-controlled gas re-enters the carrier platform 1 and returns to the gas circulation pump 203 from the middle of the carrier platform 1 to achieve the circulation of the temperature-controlled gas. The temperature-controlled gas may be a gas including nitrogen, hydrogen and argon, or a mixed gas including any two or three of nitrogen, hydrogen and argon.

[0039] Figure 7-8It is shown that a protective ring film 106 is fixedly connected to the bottom of the outer ring of the heat-conducting film pocket 102, and the protective ring film 106 is in corresponding contact with the pile block 105. The protective ring film 106 is used to provide protection for the outer ring of the heat-conducting film pocket 102, effectively avoiding friction damage between the heat-conducting film pocket 102 and the pile block 105. The protective ring film 106 is made of wear-resistant silicone material, and the heat-conducting film pocket 102 is made of heat-conducting silicone material. The protective ring film 106 made of wear-resistant silicone material has good wear resistance, which effectively improves the protection effect of the heat-conducting film pocket 102. The heat-conducting film pocket 102 made of heat-conducting silicone material has good thermal conductivity, which effectively improves the heat transfer effect of the heat-conducting film pocket 102;

[0040] The support block 105 is used to contact the outer ring of the thermally conductive film pocket 102, so that the support block 105 can clamp the edge of the deposited wafer disk 103 inside the thermally conductive film pocket 102, thereby effectively improving the installation stability of the deposited wafer disk 103, and the outer ring of the thermally conductive film pocket 102 is protected by the protective ring film 106 with good wear resistance, effectively avoiding the wear of the thermally conductive film pocket 102 by the support block 105, thereby effectively improving the service life of the thermally conductive film pocket 102.

[0041] The second implementation method:

[0042] Figure 8-9 As shown, a storage ring groove 4 is provided on the upper surface of the wafer disc ring 101, and the outer ring of the protective ring film 106 is fixedly connected to the outer ring edge of the storage ring groove 4. A top ring 401 is sleeved inside the storage ring groove 4, and the top ring 401 contacts the protective ring film 106. The top ring 401 in the storage ring groove 4 rises and lifts up the protective ring film 106 to achieve the overall rise of the thermal film pocket 102, thereby exposing the deposited wafer disk 103 wrapped in the thermal film pocket 102, which is convenient for taking the deposited wafer disk 103. A support tube 402 is fixedly connected to the bottom of the storage ring groove 4, and the bottom end of the support tube 402 is fixedly connected to the upper opening of the lifting hole 104. The support tube 402 effectively improves the support stability of the storage ring groove 4 and effectively prevents the support platform 1 from collapsing.

[0043] After the vapor deposition process is completed, when the deposited wafer disk 103 needs to be taken out, the ejection ring 401 in the storage ring groove 4 rises and lifts up the contact protection ring film 106, so that the thermal conductive film pocket 102 rises as a whole, thereby exposing the deposited wafer disk 103 wrapped in the thermal conductive film pocket 102, making it easier to take out the deposited wafer disk 103, and the support tube 402 supports the bottom of the wafer disk ring 101, effectively improving the support stability of the storage ring groove 4, thereby effectively preventing the support platform 1 from collapsing.

[0044] Figure 9-10As shown, a telescopic column 403 is inserted into the interior of the support tube 402, and the top of the telescopic column 403 is fixedly connected to the ejection ring 401. The telescopic column 403 in the support tube 402 is used to push the ejection ring 401 to facilitate the ejection ring 401 to rise and leave the storage ring groove 4. The bottom end of the telescopic column 403 is fixedly connected to a lifting ring 404, and the lifting ring 404 is sleeved with the lifting hole 104. The top of the piston ring 201 is vertically corresponding to the lifting ring 404. When the deposition wafer disk 103 is taken out, the lifting gas bucket 2 rises to the maximum height, so that the piston ring 201 outside the lifting gas bucket 2 contacts and drives the lifting ring 404 to rise, and the lifting movement of the ejection ring 401 is realized through the telescopic column 403.

[0045] When it is necessary to remove the wafer disc ring 101, the heating of the deposited wafer disk 103 is stopped. At this time, the lifting air bucket 2 rises to the maximum height, the upper edge of the lifting air bucket 2 contacts the lifting ring 404, and drives the lifting ring 404 to rise, and the telescopic column 403 in the support tube 402 pushes the ejection ring 401 to rise, so that the ejection ring 401 rises and lifts up to contact the protective ring film 106.

[0046] In view of current practical needs, the above-mentioned implementation mode adopted in this application is not limited to the scope of protection. Various changes made within the knowledge scope of technical personnel in this field without departing from the concept of this application still fall within the scope of protection of the present invention.

Claims

1. A physical vapor deposition system with an intelligent temperature control system, Features: The invention comprises a hollow carrying platform (1), wherein a wafer disc ring (101) is fixedly distributed in an annular shape on the upper surface of the carrying platform (1), a heat-conducting film pocket (102) is fixedly connected to the top of the wafer disc ring (101), a deposition wafer disk (103) is wrapped inside the heat-conducting film pocket (102), and a lifting hole (104) is opened on the lower surface of the carrying platform (1), the lifting hole (104) vertically corresponds to the wafer disc ring (101), and a lifting air bucket (2) is sleeved inside the lifting hole (104), and the lifting air bucket (2) is The top outer ring of the lifting air bucket (2) is fixedly connected to a piston ring (201), the piston ring (201) is slidably connected to the inner wall of the lifting hole (104), the interior of the lifting air bucket (2) is fixedly connected to a heating mesh plate (202), the heating mesh plate (202) vertically corresponds to the heat-conducting film pocket (102), the bottom of the inner ring of the wafer disc ring (101) is arranged in an inclined surface, and the bottom of the inner ring of the wafer disc ring (101) is fixedly distributed with supporting pile blocks (105) in a ring shape, and the supporting pile blocks (105) correspond to the outer ring of the deposition wafer disc (103); A gas circulation pump (203) is fixedly connected to the middle of the lower surface of the carrying platform (1); the input end of the gas circulation pump (203) is in communication with the interior of the carrying platform (1); and an air guide pipe (204) is fixedly connected between the output end of the gas circulation pump (203) and the bottom end of the lifting gas bucket (2); a dispersion turning wheel (205) is rotatably connected to the top of the connection end between the gas guide pipe (204) and the lifting gas bucket (2); and the dispersion turning wheel (205) vertically corresponds to the heating screen (202).

2. A physical vapor deposition system with an intelligent temperature control system according to claim 1, Features: The bottom of the lifting air bucket (2) is fixedly connected to a lifting control disk (3), the outside of the bottom of the carrying platform (1) is fixedly connected to a lifting cylinder (301), and the output end of the lifting cylinder (301) is fixedly connected to the lifting control disk (3).

3. A physical vapor deposition system with an intelligent temperature control system according to claim 2, Features: One end of the bearing platform (1) is fixedly connected to a buffer storage bin (302), the top of the buffer storage bin (302) is movably connected to a buffer piston group (303), and the telescopic movement of the lifting cylinder (301) corresponds to the telescopic movement of the buffer piston group (303).

4. A physical vapor deposition system with an intelligent temperature control system according to claim 1, Features: A protective ring film (106) is fixedly connected to the bottom of the outer ring of the heat-conducting film pocket (102), and the protective ring film (106) is in corresponding contact with the supporting pile block (105).

5. A physical vapor deposition system with an intelligent temperature control system according to claim 4, Features: The protective ring film (106) is made of a wear-resistant silicone material, and the heat-conducting film pocket (102) is made of a heat-conducting silicone material.

6. A physical vapor deposition system with an intelligent temperature control system according to claim 4, Features: The upper surface of the wafer disc ring (101) is provided with a storage ring groove (4), the outer ring of the protective ring film (106) is fixedly connected to the outer ring edge of the storage ring groove (4), and the interior of the storage ring groove (4) is provided with a push-out ring (401), and the push-out ring (401) is in contact with the protective ring film (106).

7. A physical vapor deposition system with an intelligent temperature control system according to claim 6, Features: The bottom of the storage ring groove (4) is fixedly connected to a support tube (402), and the bottom end of the support tube (402) is fixedly connected to the upper opening of the lifting hole (104).

8. A physical vapor deposition system with an intelligent temperature control system according to claim 7, Features: A telescopic column (403) is inserted into the interior of the support tube (402), and the top end of the telescopic column (403) is fixedly connected to the ejection ring (401).

9. A physical vapor deposition system with an intelligent temperature control system according to claim 8, Features: The bottom end of the telescopic column (403) is fixedly connected to a lifting ring (404), the lifting ring (404) is sleeved with the lifting hole (104), and the top end of the piston ring (201) vertically corresponds to the lifting ring (404).

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