Atomic layer deposition equipment

Abstract

The present invention discloses an atomic layer deposition device, comprising: a cavity; a base, the base is arranged in the cavity, and is used to carry a wafer to be processed; a gas shower head, the gas shower head is arranged above the base, and is used to introduce process gas into the cavity, and a process area is formed between the gas shower head and the base; a sealing component, the sealing component is configured to be able to move up and down, so as to form a sealed process area in part of the process period. The atomic layer deposition device of the present invention is provided with a sealing component, which forms a closed reaction space in part of the process period, increases the pressure of the gas in the reaction space, thereby shortening the saturation reaction time, and can reduce the ineffective consumption of the reaction gas and reduce the cost.

Description

Technical Field

[0001] The present invention relates to the field of atomic layer deposition equipment, and in particular to the field of sealing structures of atomic layer equipment. Background Art

[0002] Semiconductor equipment is equipment for making chips. As process nodes continue to advance downward, semiconductor equipment has become the core of the downward breakthrough of advanced process chips.

[0003] In advanced processes, atomic layer deposition (ALD) equipment plays an increasingly important role. ALD equipment achieves thin film deposition through surface self-saturation reaction. Generally, there are at least two or more gas sources involved in the reaction. Different gas sources are sequentially introduced into the cavity in the form of pulses, and inert gas is introduced between the two gas sources to prevent the two gas sources from affecting each other.

[0004] However, the atomic layer deposition equipment in the prior art has the following problems: when the gas source is saturated, the reaction time is very long and a large amount of gas is wasted. How to increase the speed and reduce the cost has become an urgent problem to be solved. Summary of the invention

[0005] In view of this, an object of the present invention is to provide an atomic layer deposition device that can solve the problem of how to shorten the saturation reaction time while reducing the ineffective consumption of reaction gas and lowering costs.

[0006] To achieve the above object, the present invention provides an atomic layer deposition device, comprising:

[0007] Cavity;

[0008] A base, which is disposed in the cavity and is used to carry the wafer to be processed;

[0009] A gas shower head, which is disposed above the base and is used to introduce process gas into the cavity, and a process area is formed between the gas shower head and the base;

[0010] The sealing assembly is configured to be able to move up and down to form a sealed process area during a partial process period.

[0011] Furthermore, the sealing assembly includes a lifting ring, which is configured to be arranged around the process area and can move up and down relative to the process area.

[0012] Furthermore, the sealing assembly further comprises a fixing ring, which is arranged on the lower surface of the gas shower head, and the lifting ring is sleeved on the outer side surface of the fixing ring, and the lifting ring is configured to be able to move up and down relative to the fixing ring.

[0013] Further, the lifting ring is configured so that during the partial process period, the lower end of the lifting ring can move to surround the outer side surface of the base, thereby forming a sealed process area.

[0014] Furthermore, the lifting ring is configured to be connected to the base and can move up and down relative to the base. During a part of the process period, the upper end of the lifting ring can move to the lower surface of the gas shower head to form a sealed process area.

[0015] Furthermore, an annular groove is provided on the lower surface of the gas shower head, and the annular groove cooperates with the upper end of the lifting ring.

[0016] Furthermore, a first sealing structure is arranged on the inner side surface of the lifting ring, and the first sealing structure is a first transverse ring. When the first sealing structure forms a sealed process area during a partial process period, the first sealing structure reaches the lower surface of the base.

[0017] Furthermore, at least one concentric first annular protrusion is provided on the upper surface of the first transverse ring, and at least one first annular groove is provided on the lower surface of the base. When forming a sealed process area, the first annular protrusion cooperates with the first annular groove.

[0018] Furthermore, a second sealing structure is provided on the outer side surface of the upper end of the lifting ring, and the second sealing structure is a second transverse ring. At least one concentric second annular protrusion is provided on the upper surface of the second transverse ring, and at least one second annular groove is provided on the lower surface of the gas shower head. When forming a sealed process area, the second annular protrusion cooperates with the second annular groove.

[0019] Furthermore, the sealing assembly also includes a driving mechanism, which is arranged on the fixing ring, one end of which is connected to the fixing ring, and the other end is connected to the lifting ring; the fixing ring and the gas spray are arranged with a hollow cavity that is sealed and connected to each other, and the wire of the driving mechanism is arranged in the hollow cavity.

[0020] Furthermore, the sealing assembly also includes a driving mechanism, which is arranged on the cavity wall, one end of the driving mechanism is connected to the cavity wall, and the other end of the driving mechanism is connected to the lifting ring.

[0021] Furthermore, there are two driving mechanisms, which are opposite to each other.

[0022] Furthermore, the partial process period is a period during which the first precursor or the second precursor is introduced into the cavity.

[0023] Compared with the prior art, the present invention has the following beneficial effects:

[0024] The sealing component of the present invention forms a closed reaction space during a part of the process period, thereby increasing the pressure of the gas in the reaction space, thereby shortening the saturation reaction time, and at the same time reducing the ineffective consumption of the reaction gas and reducing the cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0026] Figure 1 It is a schematic diagram of the atomic layer deposition equipment of the present invention;

[0027] Figure 2 is another schematic diagram of the atomic layer deposition apparatus of the present invention;

[0028] Figure 3 is another schematic diagram of the atomic layer deposition apparatus of the present invention;

[0029] Figure 4 is another schematic diagram of the atomic layer deposition apparatus of the present invention;

[0030] Figure 5 is another schematic diagram of the atomic layer deposition apparatus of the present invention;

[0031] Figure 6 It is a partial enlarged view of the atomic layer deposition device of the present invention;

[0032] Figure 7 It is a schematic diagram of the process flow of the present invention. DETAILED DESCRIPTION

[0033] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0034] Figure 1 Schematic diagram of the atomic layer deposition equipment of the present invention is shown. Figure 1As shown, the atomic layer deposition equipment includes a chamber 130, a base 120, a base lifting device, an air inlet 160, a gas shower head 110 and a sealing assembly 150; the chamber 130 is surrounded by a plurality of chamber walls 131, and the base 120 is arranged in the chamber 130 for carrying a wafer to be processed; specifically, the base 120 is horizontally arranged in the chamber 130, and the base 120 is connected to the base lifting device through a support shaft 121, that is, the base can be lifted and lowered in the chamber, and the base lifting device is arranged outside the chamber, and the base lifting device includes a driving device 123 and a supporting plate 124, and the supporting shaft 121 passes through a hole in the bottom of the chamber, and the upper end of the supporting shaft 121 is connected to the lower surface of the base, and the lower end of the supporting shaft 121 is connected to the lower surface of the base. The end is connected to the support plate 124, the driving device 123 is used to drive the support plate 124 to rise and fall, thereby driving the support shaft 121 to rise and fall, and a bellows 122 is arranged between the hole at the bottom of the cavity and the support plate 124, which is used to seal the entire cavity; the gas shower head 110 is arranged above the base 120, and is used to introduce process gas into the cavity, and a process area S is formed between the gas shower head 110 and the base 120, one end of the gas inlet member 160 is connected to the gas source, and the other end is connected to the gas shower head 110, and is arranged above the gas shower head 110 to transport process gas to the shower head; an exhaust port 140 is arranged at the bottom of the cavity, and the exhaust port 140 is connected to the pump to discharge the process gas out of the cavity. During the process, the process gas in the gas source enters the gas shower head 110 through the gas inlet 160, and the gas shower head 110 evenly flows the process gas to the process area S. The process gas acts on the surface of the wafer, and the process gas is discharged from the cavity through the pump. The gas shower head 110 includes a first flow equalizer plate 111 and a second flow equalizer plate 112, and the second flow equalizer plate 112 is arranged above the first flow equalizer plate 111.

[0035] The sealing assembly 150 is configured to be able to move up and down, so as to form a sealed process area during a partial process period.

[0036] Figure 7 The process flow is shown as Figure 7As shown, the atomic layer deposition process includes: S1, introducing a first precursor into the cavity 130, the first precursor is adsorbed or chemically reacted with the surface of the wafer, that is, a chemical saturation reaction. S2, introducing an inert gas into the cavity 130, so as to clean the first precursor and its reaction product in the cavity. S3, introducing a second precursor into the cavity 130, the second precursor chemically reacts with the first precursor adsorbed on the surface of the wafer to form a film layer, or continues to react with the product of the reaction between the first precursor and the wafer to form a grinding layer. S4, introducing an inert gas into the cavity 130 again, so as to clean the cavity. Among them, the partial process time period is the time period when the first precursor or the second precursor is introduced into the cavity. That is, the time period where the S1 and S3 processes are located. In the partial process time period (the time period where the S1 and S3 processes are located), the sealing assembly 150 moves to form a sealed process area S (such as Figure 2 ), the gas pressure in the process area S is increased, thereby shortening the saturation reaction time, while reducing the ineffective consumption of reaction gas and reducing costs.

[0037] Figure 2 Another schematic diagram of the atomic layer deposition apparatus of the present invention is shown, see Figure 1-Figure 2 The sealing assembly 150 includes a fixed ring 151 and a lifting ring 152. The fixed ring 151 is disposed on the lower surface of the gas shower head 110 (the first uniform flow plate 111 below), and the lifting ring 152 is sleeved on the outer side of the fixed ring 151. The lifting ring 152 is configured to be able to move up and down relative to the fixed ring 151. The lifting ring 152 is configured to be disposed around the process area S and can move up and down relative to the process area. Specifically, as Figure 2 As shown, the lifting ring 152 is configured so that during the partial process period, the lower end of the lifting ring 152 can move to the outer side surrounding the base 120 to form a sealed process area S. At this time, the sealed process area S is surrounded by the gas shower head 110 above, the fixed ring, the lifting ring and the base below.

[0038] The sealing assembly 150 further includes a driving mechanism, which may be disposed on a lower surface of the gas shower head 110 , a fixing ring, or a cavity wall 131 .

[0039] Optionally, the driving mechanism is disposed on the cavity wall 131, one end of the driving mechanism is connected to the cavity wall, and the other end is connected to the lifting ring. Specifically, there are two driving mechanisms, which are respectively disposed on the inner side surfaces of the cavity wall 131 opposite to each other. The driving mechanism includes a track 153, a motor 154 and a connecting rod 155. The track 153 is disposed on the cavity wall 131 and extends vertically. The motor 154 is connected to the track 153 and can move up and down relative to the track. One end of the connecting rod is connected to the motor, and the other end is connected to the outer side surface of the lifting ring 152, so as to drive the lifting ring to move up and down under the drive of the motor. Preferably, the lifting ring 152 is a cylindrical shape with upper and lower openings and circumferential sealing.

[0040] Optionally, the driving mechanism is arranged on the fixed ring. Specifically, the driving mechanism is arranged on the outer side of the fixed ring, one end of the driving mechanism is connected to the fixed ring, and the other end is connected to the lifting ring, driving the lifting ring to move up and down; the wire of the driving mechanism is arranged in the hollow cavity of the fixed ring, and the gas shower head 110 is also provided with a hollow cavity, the hollow cavity of the fixed ring is sealed and connected with the hollow cavity of the gas shower head 110, the wire passes through the hollow cavity of the fixed ring and the hollow cavity of the gas shower head 110 at one end to the outside of the cavity, and the other end is connected to the driving mechanism, and the driving structure is also two, and the two driving mechanisms are positioned oppositely. Optionally, the driving mechanism is at least one of a screw, a stepping motor or a cylinder. The wire is arranged in the hollow cavity to avoid the process temperature being too high during the process, which will cause high temperature to affect the wire.

[0041] Figure 3-Figure 5 Another schematic diagram of the atomic layer deposition device of the present invention is shown, Figure 3-Figure 5As shown, in this embodiment, the sealing assembly only includes a lifting ring 152, which is configured to be connected to the base 120 and can move up and down relative to the base. During a part of the process period, the upper end of the lifting ring can move to the lower surface of the gas shower head to form a sealed process area. Preferably, the lifting ring 152 is connected to the support shaft 121 through a driving mechanism and can move up and down relative to the support shaft. In this embodiment, the driving mechanism includes a support seat 158, a driving motor 157, a track seat 159 and a connecting device 156. The support seat 158 ​​is connected to the support shaft 121. The support seat 158 ​​is a horizontally extending ring, which is sleeved around the support shaft 121. The track seat 159 is arranged on the support seat 158. The track seat 159 is a vertical cylinder. The outer surface of the track seat is provided with at least two vertically extending tracks. The driving motor 157 is arranged on the track and can move up and down relative to the track. One end of the connecting device 156 is connected to the driving motor 157, and the other end is connected to the lower end of the lifting ring 152. Among them, there are two tracks, which are relatively arranged on the outer side of the vertical cylinder-shaped track seat 159, and there are also two driving motors. The two tracks and the driving motor are symmetrical, and there will be no center of gravity offset. During the process period when the lifting ring 152 does not need to be lifted, the upper end of the lifting ring 152 is flush with the upper surface of the base. In addition, the driving device 123 can drive the base and the lifting ring to rise and fall together, and the driving mechanism can drive the lifting ring to rise and fall alone.

[0042] Continue to see Figure 4 , an annular groove 1111 is provided on the lower surface of the gas shower head, and the annular groove 1111 cooperates with the upper end of the lifting ring. Specifically, the annular groove 1111 is provided on the lower surface of the first flow equalizer 111. Thereby, the sealing is increased in some process periods. Preferably, in some process periods (the period where the S1 and S3 processes are located), there is a gap between the annular groove 1111 and the upper end of the lifting ring, and the gap is less than or equal to 2mm, so as to avoid collision and friction between the two and generate particulate matter to pollute the cavity. That is, the annular groove 1111 does not contact the upper end of the lifting ring.

[0043] Continue to see Figure 4 The inner side of the lifting ring is provided with a first sealing structure 1521, which is a first transverse ring. When the first sealing structure forms a sealed process area during a part of the process period, the first sealing structure reaches the lower surface of the base. Preferably, during a part of the process period (the period where the S1 and S3 processes are located), there is a gap between the first sealing structure and the lower surface of the base, and the gap is less than or equal to 2 mm to avoid collision and friction between the two and the generation of particles to pollute the cavity. That is, the first sealing structure does not contact the lower surface of the base. Figure 5 A schematic diagram of forming a sealed process area S in a partial process period (a period where processes S1 and S3 are located) is shown.

[0044] Preferably, Figure 6 A local enlarged view is shown, such as Figure 6 As shown, at least one concentric first annular protrusion 1522 is provided on the upper surface of the first transverse ring, and at least one first annular groove is provided on the lower surface of the base. When forming a sealed process area, the first annular protrusion 1522 cooperates with the first annular groove to increase the sealing performance. Similarly, a gap is provided between the first annular protrusion 1522 and the first annular groove, and the gap is less than or equal to 2 mm.

[0045] A second sealing structure is arranged on the outer side surface of the upper end of the lifting ring. The second sealing structure is a second transverse ring. At least one concentric second annular protrusion 1531 is arranged on the upper surface of the second transverse ring. At least one second annular groove 1112 is arranged on the lower surface of the gas shower head. When forming a sealed process area, the second annular protrusion 1531 cooperates with the second annular groove 1112 to increase the sealing performance. Similarly, a gap is arranged between the second annular protrusion 1531 and the second annular groove 1112, and the gap is less than or equal to 2 mm.

[0046] The sealing component of the present invention forms a closed reaction space during a part of the process period, thereby increasing the pressure of the gas in the reaction space, thereby shortening the saturation reaction time, and at the same time reducing the ineffective consumption of the reaction gas and reducing the cost.

[0047] The above description of the disclosed embodiments enables one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An atomic layer deposition device, characterized in that: include: Cavity; A base, which is disposed in the cavity and is used to carry the wafer to be processed; A gas shower head, which is disposed above the base and is used to introduce process gas into the cavity, and a process area is formed between the gas shower head and the base; A sealing component, wherein the sealing component is configured to be able to move up and down, so as to form a sealed process area during a partial process period; the partial process period is a period during which the first precursor or the second precursor is introduced into the chamber during the atomic layer deposition process; The sealing assembly includes a lifting ring configured to be disposed around the process area and capable of moving up and down relative to the process area; The lifting ring is configured to be connected to the base and can move up and down relative to the base. During a part of the process period, the upper end of the lifting ring can move to the lower surface of the gas shower head to form a sealed process area. An annular groove is provided on the lower surface of the gas shower head, and the annular groove cooperates with the upper end of the lifting ring; A first sealing structure is disposed on the inner side of the lifting ring. The first sealing structure is a first transverse ring. When the first sealing structure forms a sealed process area during a partial process period, the first sealing structure reaches the lower surface of the base.

2. The atomic layer deposition device according to claim 1, characterized in that: At least one concentric first annular protrusion is disposed on the upper surface of the first transverse ring, and at least one first annular groove is disposed on the lower surface of the base. When forming a sealed process area, the first annular protrusion cooperates with the first annular groove.

3. The atomic layer deposition device according to claim 1, characterized in that: A second sealing structure is arranged on the outer side surface of the upper end of the lifting ring. The second sealing structure is a second transverse ring. At least one concentric second annular protrusion is arranged on the upper surface of the second transverse ring. At least one second annular groove is arranged on the lower surface of the gas shower head. When forming a sealed process area, the second annular protrusion cooperates with the second annular groove.

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