A flexible processing control method and platform for trench Schottky structure diodes

Abstract

The present invention discloses a flexible processing control method and platform for a diode with a groove Schottky structure, which belongs to the field of diode processing, wherein the method includes: determining a single crystal layer to be etched and a metal silicide layer on the single crystal layer to be etched; determining groove structure parameters, judging whether the groove is a double-layer etched groove according to the groove structure parameters, and if the groove is a double-layer etched groove, starting a flexible processing control module, and the flexible processing control module performs sub-mode groove etching with the groove structure parameters. The present application solves the technical problem of groove defects and instability caused by material differences when groove etching is performed on different material layers for a diode with a groove Schottky structure in the prior art, and realizes continuous and stable formation of grooves between different materials by adopting sub-mode flexible processing control for different materials, thereby reducing groove defects and achieving the technical effect of improving the performance and yield of a diode with a groove Schottky structure.

Description

Technical Field

[0001] The present invention relates to the field of diode processing, and in particular to a method and platform for flexible processing control of diodes with a trench Schottky structure. Background Art

[0002] Trench Schottky diodes are widely used in power electronics, communications and other fields due to their advantages such as low on-state voltage and fast switching speed. Trench Schottky diodes usually adopt a structure in which a metal silicide layer is formed on the surface of single crystal silicon and then a groove is etched on the metal silicide layer. In the prior art, the preparation of trench Schottky diodes is to first form a metal silicide layer on the surface of single crystal silicon, and then etch the metal silicide layer to form a groove. However, due to the large difference in material between the metal silicide layer and single crystal silicon, the etching rate and effect are easily changed due to material changes during the etching process, which in turn causes problems such as uneven groove depth and rough groove sidewalls, thereby causing groove defects and instability. Summary of the invention

[0003] The present application provides a flexible processing control method and platform for a trench Schottky structure diode, aiming to solve the technical problems of trench defects and instability caused by material differences when trench etching is performed on different material layers for a trench Schottky structure diode in the prior art.

[0004] In view of the above problems, the present application provides a method and platform for flexible processing and control of a diode with a trench Schottky structure.

[0005] The first aspect disclosed in the present application provides a flexible processing control method for a diode with a trench Schottky structure, the method comprising: determining a single crystal layer to be etched and a metal silicide layer on the single crystal layer to be etched; determining groove structure parameters, judging whether the groove is a double-layer etched groove according to the groove structure parameters, if the groove is a double-layer etched groove, starting a flexible processing control module, the flexible processing control module performs multi-mode groove etching according to the groove structure parameters; wherein the flexible processing control module performs groove etching on the metal silicide layer according to a first flexible processing mode, if a sensor of the flexible processing module detects a material change, the first flexible processing mode is switched to the second flexible processing mode to perform groove etching on the single crystal layer to be etched.

[0006] Another aspect disclosed in the present application provides a flexible processing control platform for a diode with a trench Schottky structure, the platform comprising: a material determination unit, used to determine a single crystal layer to be etched and a metal silicide layer on the single crystal layer to be etched; a flexible etching unit, used to determine groove structure parameters, and judge whether the groove is a double-layer etched groove according to the groove structure parameters, if the groove is a double-layer etched groove, start the flexible processing control module, and the flexible processing control module performs multi-mode groove etching according to the groove structure parameters; wherein the flexible processing control module performs groove etching on the metal silicide layer according to the first flexible processing mode, and if the sensor of the flexible processing module detects a material change, the first flexible processing mode is switched to the second flexible processing mode to perform groove etching on the single crystal layer to be etched.

[0007] One or more technical solutions provided in this application have at least the following technical effects or advantages:

[0008] Since the single crystal layer to be etched and the metal silicide layer on the single crystal layer to be etched are determined, a foundation is laid for selecting appropriate etching modes for different materials in the subsequent process; the groove structure parameters are determined, and whether the groove is a double-layer etching groove is judged according to the groove structure parameters. If the groove is a double-layer etching groove, the flexible processing control module is started. The flexible processing control module performs sub-mode groove etching according to the groove structure parameters, and by analyzing the groove structure parameters, it is judged whether the groove crosses the metal silicide layer and the single crystal layer. When it is determined to be a double-layer etching groove, the flexible processing control module is started, and different etching modes are adopted for different materials, so as to realize the optimal formation of the groove in different material layers; wherein, the flexible processing control module is based on the first flexible processing control module. The metal silicide layer is grooved in a flexible processing mode. If the sensor of the flexible processing module detects a material change, the first flexible processing mode is switched to the second flexible processing mode to groove the single crystal layer to be etched, thereby ensuring the continuity and consistency of the grooves in different material layers and reducing the defects caused by material differences. The technical solution solves the technical problems of groove defects and instability caused by material differences when grooves are etched in different material layers for trench Schottky structure diodes in the prior art. By adopting sub-mode flexible processing control for different materials, continuous and stable formation of grooves between different materials is achieved, groove defects are reduced, and the technical effect of improving the performance and yield of trench Schottky structure diodes is achieved.

[0009] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1A schematic flow chart of a method for controlling flexible processing of a diode with a trench Schottky structure is provided for an embodiment of the present application;

[0011] Figure 2 A structural schematic diagram of a diode flexible processing control platform for a trench Schottky structure is provided for an embodiment of the present application.

[0012] Description of reference numerals: material determination unit 11 , flexible etching unit 12 . DETAILED DESCRIPTION

[0013] The overall idea of ​​the technical solution provided by this application is as follows:

[0014] The embodiment of the present application provides a method and platform for flexible processing control of diodes with a trench Schottky structure. First, determine the single crystal layer and metal silicide layer to be etched, as well as the groove structure parameters, to determine whether the groove spans two materials and requires sub-mode etching. Secondly, if it is a double-layer etched groove, start the flexible processing control module, which first adopts the first flexible processing mode optimized for the metal silicide layer. When a material change is detected, it switches to the second flexible processing mode designed for the single crystal layer to achieve continuity and consistency of the groove in different material layers. Through sub-mode dynamic control, the influence of material differences on the etching effect is effectively overcome, and the optimal formation of the groove structure on the metal silicide layer and the single crystal layer is achieved, defects are reduced, and device performance and yield are improved.

[0015] After introducing the basic principles of the present application, various non-limiting implementation methods of the present application will be specifically described below in conjunction with the drawings in the specification.

[0016] Embodiment 1, as Figure 1 As shown, the embodiment of the present application provides a method for controlling the flexible processing of a diode with a trench Schottky structure, the method comprising:

[0017] S1: Determine a single crystal layer to be etched and a metal silicide layer on the single crystal layer to be etched.

[0018] Specifically, the single crystal layer can be a single crystal thin film made of semiconductor materials such as single crystal silicon, single crystal germanium, single crystal gallium arsenide, and single crystal gallium nitride. The metal silicide layer is formed on the surface of the single crystal layer, and is formed by a chemical reaction between the metal material and the silicon atoms on the surface of the single crystal layer. Among them, the metal silicide includes cobalt silicide, nickel silicide, titanium silicide, etc. A Schottky junction is formed between the metal silicide layer and the single crystal layer, which is one of the key structures of the Schottky diode.

[0019] In the subsequent preparation process, grooves of specific shapes will be etched on the metal silicide layer and the single crystal layer to construct a trench Schottky structure. Therefore, before etching, the position and range of the single crystal layer to be etched and the metal silicide layer on its surface must be clearly defined. For example, the cross section of the diode device is observed using an electron microscope to determine the single crystal layer and the metal silicide layer.

[0020] By determining the single crystal layer and the metal silicide layer, the etching scheme can be further optimized and targeted sub-mode flexible processing control can be implemented to obtain a high-quality groove structure.

[0021] S2: Determine the groove structure parameters, and judge whether the groove is a double-layer etched groove according to the groove structure parameters. If the groove is a double-layer etched groove, start the flexible processing control module, and the flexible processing control module performs multi-mode groove etching according to the groove structure parameters.

[0022] Among them, the flexible processing control module performs groove etching on the metal silicide layer according to the first flexible processing mode. If the sensor of the flexible processing module detects a material change, the first flexible processing mode is switched to the second flexible processing mode to perform groove etching on the single crystal layer to be etched.

[0023] Specifically, after determining the single crystal layer and metal silicide layer to be etched, a flexible processing control method is used to adapt to the etching requirements of different material layers and improve the accuracy and quality of groove processing.

[0024] First, determine the structural parameters of the groove to be etched, such as the depth, width and sidewall angle of the groove. According to the groove structural parameters, determine whether the groove spans the two materials of the metal silicide layer and the single crystal layer. If the groove passes through the metal silicide layer and the single crystal layer at the same time, the groove is judged to be a double-layer etched groove. After confirming that the groove is a double-layer etched groove, start the flexible processing control module, and adopt different etching modes and parameters for different material layers. Specifically, in the processing process of the double-layer etched groove, the flexible processing control module adopts a sub-mode etching strategy, and dynamically switches the flexible processing mode and parameters according to the different materials to optimize the etching effect. In the initial stage of etching, the flexible processing control module first etches the metal silicide layer according to the first flexible processing mode. The first flexible processing mode selects corresponding etching process parameters such as the type and flow rate of etching gas, RF power, bias voltage, etc. according to the characteristics of the metal silicide material to achieve efficient and accurate etching of the metal silicide layer. As etching proceeds, when the sensor of the flexible processing control module detects that the etching interface transitions from the metal silicide layer to the single crystal layer, the flexible processing mode switching is triggered in time. Among them, the material change refers to the transformation of the etching interface material from metal silicide to single crystal semiconductor material. In view of the different physical and chemical properties of the single crystal layer material, the flexible processing control module switches the etching mode from the first flexible processing mode to the second flexible processing mode in time. The second flexible processing mode corresponds to the etching process parameters of the single crystal layer, adapts to the etching requirements of the single crystal material, and ensures the continuous and smooth extension of the groove in the single crystal layer.

[0025] Through the method of flexible processing control with different modes, it is possible to dynamically respond to changes in material layers during the processing of double-layer etched grooves, optimize the etching process in real time, and utilize real-time sensing and rapid feedback mechanisms to intelligently adjust etching modes and parameters for different material layers, effectively improving the processing accuracy and surface quality of the double-layer etched grooves, thereby improving device performance and yield.

[0026] Furthermore, the embodiment of the present application also includes:

[0027] If the groove is a double-layer etched groove, decompose the groove structure parameters to output the first groove structure parameters corresponding to the metal silicide layer and the second groove structure parameters corresponding to the single crystal layer to be etched;

[0028] Recording material information of the single crystal layer to be etched and material information of the metal silicide layer;

[0029] Outputting first etching process parameters according to the material information of the metal silicide layer and the first groove structure parameters, wherein the first flexible processing mode performs groove etching on the metal silicide layer according to the first etching process parameters;

[0030] According to the material information of the single crystal layer to be etched and the second groove structure parameters, second etching process parameters are output, and the second flexible processing mode performs groove etching on the single crystal layer according to the second etching process parameters.

[0031] In a feasible implementation, after determining that the groove is a double-layer etched groove spanning the metal silicide layer and the single crystal layer, the total groove structure parameters are decomposed. By decomposition, the first groove structure parameters corresponding to the metal silicide layer and the second groove structure parameters corresponding to the single crystal layer are obtained. Among them, the first groove structure parameters describe the target morphology of etching the groove in the metal silicide layer, such as geometric parameters such as groove depth, groove width and sidewall angle; similarly, the second groove structure parameters define the target morphology of etching the groove in the single crystal layer, including geometric parameters such as groove depth, width and sidewall angle. While obtaining the decomposed groove structure parameters, the material information of the single crystal layer and the metal silicide layer to be etched is recorded, such as the type of material, chemical composition, crystal orientation, etc. The material information and the groove structure parameters jointly determine the selection of etching process parameters.

[0032] Next, the first etching process parameters are determined according to the material information of the metal silicide layer and the first groove structure parameters. The first etching process parameters include process conditions such as etching gas power, gas pressure, rate and time. Based on the first etching process parameters, the first flexible processing mode can optimize the etching of the metal silicide layer to obtain high-quality grooves that meet the expected morphology. Similarly, the second etching process parameters are determined according to the material information of the single crystal layer and the second groove structure parameters. The second etching process parameters are determined based on the physical and chemical properties of the single crystal material. Under the guidance of the second etching process parameters, the second flexible processing mode can etch high-quality grooves that meet the requirements of depth, width and sidewall angle in the single crystal layer.

[0033] By determining the optimal etching parameters for the metal silicide layer and the single crystal layer respectively, the advantages of the sub-mode etching are fully utilized to achieve refined and differentiated etching of different material layers. In the process of double-layer etched grooves, the corresponding etching parameters are switched in time according to the material transformation, dynamically adapting to the changes in the material layer, thereby improving the processing accuracy and efficiency of the grooves, effectively avoiding etching defects caused by parameter mismatch, and finally obtaining high-performance trench Schottky diode devices.

[0034] Furthermore, the embodiment of the present application also includes:

[0035] The flexible processing control module is connected to an etching device, and the etching device includes an etching gas supply source and an etching liquid supply source;

[0036] Acquiring a gas supply parameter and a liquid supply parameter according to the first etching process parameter and the second etching process parameter;

[0037] When the flexible processing control module performs trench etching on the metal silicide layer according to the first etching processing parameter, the etching gas supply source supplies gas according to the gas supply parameter;

[0038] When the flexible processing control module performs groove etching on the metal silicide layer according to the second etching processing parameters, the etching liquid supply source supplies according to the liquid supply parameters.

[0039] In a preferred embodiment, the flexible processing control module is connected to the etching equipment, wherein the etching equipment includes an etching gas supply source and an etching liquid supply source, which are respectively used to provide the gaseous and liquid etching media required for etching. According to the determined first etching processing parameters and second etching processing parameters, the corresponding gas supply parameters and liquid supply parameters are further obtained. Among them, the gas supply parameters include the type, flow rate, pressure, etc. of the etching gas, and the liquid supply parameters include the type, flow rate, temperature, etc. of the etching liquid. The gas supply parameters and liquid supply parameters are selected by the expert group based on factors such as material properties, groove structure, and performance of the etching equipment to ensure the optimal supply state of the etching medium at different processing stages.

[0040] When the flexible processing control module performs groove etching on the metal silicide layer according to the first etching process parameters, the etching gas supply source supplies etching gas according to the corresponding gas supply parameters. By precisely controlling the composition, flow rate and pressure of the gas, high-quality grooves that meet the requirements of the first groove structure parameters are obtained on the metal silicide layer. When the etching process enters the single crystal layer, the flexible processing control module will switch to the second etching process parameters. At this time, the etching liquid supply source starts to provide etching liquid according to the corresponding liquid supply parameters, and etches an ideal groove that meets the requirements of the second groove structure parameters in the single crystal layer through the second etching process parameters, and ensures that it achieves a continuous and smooth transition with the groove in the upper metal silicide layer.

[0041] The gas-liquid coupling supply method is adopted to fully utilize the characteristics of different etching media and give play to their advantages in etching different material layers. Gaseous etching media usually have high etching anisotropy, which is suitable for etching metal silicide layers and obtaining steep trench sidewalls; while liquid etching media have a high selectivity, which can achieve precise etching of single crystal layers while avoiding damage to the formed device structure.

[0042] The flexible processing control module is used to coordinate and control the work of the gas and liquid supply sources in the etching equipment. During the entire process of double-layer etching groove processing, dynamic optimization and regulation of the etching medium type and supply status are achieved to ensure high-precision and high-quality sub-mode etching. This not only improves the etching efficiency and shortens the processing time, but also minimizes etching defects, laying a technological foundation for the preparation of high-performance trench Schottky diode devices.

[0043] Furthermore, the embodiment of the present application also includes:

[0044] The flexible processing module also includes an etching feedback optimization network;

[0045] Performing quality monitoring on the surface of the formed groove according to the etching feedback optimization network, including groove surface roughness, groove particle deposition and groove structure accuracy;

[0046] Obtaining a groove quality index according to the groove surface roughness, groove particle deposition and groove geometric accuracy;

[0047] If the groove quality index is less than the preset quality index, the current etching process parameters are feedback optimized with the preset quality index as the target.

[0048] In a preferred embodiment, an etching feedback optimization network is introduced to further enhance the intelligence level of the flexible processing control module. Through the etching feedback optimization network, the quality of the groove processing can be monitored in real time, and the etching processing parameters can be dynamically optimized according to the feedback information to ensure the high precision and high quality of the groove structure.

[0049] First, during the groove etching process, the etching feedback optimization network performs real-time quality monitoring on the processed groove surface and obtains multiple quality monitoring indicators, including groove surface roughness, groove particle deposition, and groove structure accuracy. Through quality monitoring, the actual effect of groove processing can be comprehensively evaluated. Secondly, the etching feedback optimization network calculates a comprehensive groove quality index based on the information obtained on the groove surface roughness, groove particle deposition degree, and groove geometric accuracy, and characterizes the overall quality level of the processed groove structure. For example, a typical high-quality groove is selected as a training sample, and its groove surface roughness, groove particle deposition, and groove structure accuracy are extracted as feature vectors, and the expert group gives a comprehensive quality score as a label to obtain training data; using these training data, the neural network model is trained and optimized so that it can learn the mapping relationship from multiple quality monitoring indicators to comprehensive quality indicators; in the actual groove processing process, the real-time collected quality monitoring data is input into the trained neural network model, and the corresponding comprehensive quality index, that is, the groove quality index, can be quickly calculated, reflecting the overall quality level of the current processed groove.

[0050] Afterwards, the etching feedback optimization network compares the actual groove quality index with the preset quality index. If the actual groove quality index is lower than the preset quality index, it means that the current etching process has not achieved the ideal effect and further optimization and adjustment are required. At this time, with the preset quality index as the optimization target, the etching feedback optimization network performs intelligent feedback optimization on the current etching process parameters, including adjusting the composition ratio, flow rate and pressure of the etching gas or liquid, adjusting the etching power and bias voltage, adjusting the etching time and rate, etc. Through the dynamic adjustment of the etching process parameters, the roughness of the groove surface can be improved in a targeted manner, particle deposition can be reduced, and the geometric accuracy of the groove structure can be improved, so that the actual groove quality index continues to approach and reach the preset quality index.

[0051] By introducing an etching feedback optimization network, instant feedback and closed-loop optimization control of the etching process can be performed to minimize processing deviations, avoid etching defects, and ensure accurate preparation of double-layer etched grooves.

[0052] Furthermore, the embodiment of the present application also includes:

[0053] The flexible processing control module also includes a third flexible processing mode;

[0054] Dividing an etching transition layer according to the single crystal layer to be etched and the metal silicide layer, wherein the etching transition layer is an intermediate layer from the metal silicide layer to the single crystal layer to be etched;

[0055] The flexible processing control module performs groove etching on the etching transition layer according to the third flexible processing mode.

[0056] In a preferred embodiment, a third flexible processing mode is further introduced to handle the etching transition problem between the metal silicide layer and the single crystal layer. By dividing and processing the etching transition layer in a targeted manner, a smooth transition of the groove structure between different material layers is achieved, further improving the processing quality and yield.

[0057] Specifically, after determining the metal silicide layer and the single crystal layer to be etched, a special etching transition layer is divided at the junction thereof according to the characteristics of the two material layers. The etching transition layer is an intermediate layer between the metal silicide layer and the single crystal layer, and has the characteristics of both materials in terms of material composition and properties. The purpose of introducing the etching transition layer is to avoid structural defects and interface damage caused by too drastic changes in etching conditions during the material layer switching process. After dividing the etching transition layer, the flexible processing control module starts the third flexible processing mode to perform groove etching specifically on the transition layer. Unlike the first flexible processing mode for the metal silicide layer and the second flexible processing mode for the single crystal layer, the third flexible processing mode is customized for the etching transition layer. In the selection of etching processing parameters, the material composition and structural characteristics of the etching transition layer are fully considered, and efforts are made to achieve a smooth continuation of the groove structure in the transition area.

[0058] The third flexible processing mode can ensure the smooth transition and continuous extension of the groove structure in the interface area between the metal silicide layer and the single crystal layer, effectively avoiding structural defects at the interface. Compared with simple layered etching, adding a third flexible processing mode specifically for the transition layer can improve the processing quality and yield of the composite material structure.

[0059] Furthermore, the embodiment of the present application also includes:

[0060] The etching transition layer includes a thickness below the metal silicide layer and the thickness of the single crystal layer to be etched ,in, , is the trench thickness of the metal silicide layer, is the groove thickness of the single crystal layer to be etched.

[0061] Specifically, the etching transition layer consists of two parts. One part is the transition layer located below the metal silicide layer, and its thickness is set to , and the other part is the transition layer located above the single crystal layer to be etched, and its thickness is set to . and The thickness of the metal silicide layer trench is and the thickness of the single crystal layer to be etched A certain proportion of Should be smaller than the metal silicide layer trench thickness half of Should be smaller than the thickness of the single crystal layer to be etched half.

[0062] The purpose of introducing the etching transition layer is to achieve a smooth transition between the metal silicide layer and the single crystal layer, so the thickness of the etching transition layer should not be too large. and Respectively and If the ratio is too high, the effective trench depth of the metal silicide layer and the single crystal layer will be reduced, affecting the structural parameters and electrical characteristics of the device. and It cannot be too small. If the thickness of the transition layer is too small, it will be difficult to play an effective buffering role during the etching process, and the rapid changes in materials and structures may still introduce defects or stress. and The ratio setting must also take into account the differences in the properties of the metal silicide layer and the single crystal layer. Generally speaking, the composition and structure of metal silicide materials are more significant than those of single crystal silicon materials. Therefore, occupy The ratio can be appropriately greater than occupy ratio to achieve a more uniform gradient of material composition and structure within the transition layer. and The value needs to be optimized and determined based on the actual thickness of the metal silicide layer and the single crystal layer, the material composition, the etching process conditions and other factors in order to obtain the best transition effect and device performance. and Evaluate and screen the combination.

[0063] For example, suppose the trench thickness of the metal silicide layer in a device is The thickness of the groove of the single crystal layer to be etched is 200nm. is 500nm. You can set is 80nm, accounting for 40%; is 150nm, accounting for Such an etching transition layer thickness setting can provide a relatively sufficient transition area at the interface of the materials without occupying too much of the effective groove depth of the metal silicide layer and the single crystal layer, thus taking into account both the transition effect and the device performance.

[0064] By limiting and optimizing the thickness range of the etching transition layer, the controllability and effectiveness of the third flexible processing mode are further enhanced, which not only improves the processing quality of the composite groove structure, but also provides a guarantee for the performance of the device.

[0065] Furthermore, the embodiment of the present application also includes:

[0066] The flexible processing control module performs groove etching on the etching transition layer according to the third flexible processing mode;

[0067] Setting a parameter steady-state adjustment network, wherein the parameter steady-state adjustment network is used to perform a gradient decrease on the current groove processing parameter of the flexible processing control module to obtain a gradient groove processing parameter;

[0068] The third flexible processing mode performs groove etching on the etching transition layer according to the gradient groove processing parameters.

[0069] In a preferred embodiment, a parameter steady-state regulation network is further introduced to dynamically optimize the processing parameters in the etching process through a gradient descent algorithm to better adapt to the continuous changes in the material and structure of the etching transition layer and achieve steady-state control of the etching process.

[0070] In the process of groove etching the etching transition layer using the third flexible processing mode, a parameter steady-state adjustment network is set. The main function of this network is to monitor and dynamically adjust the current groove processing parameters in real time, so that it is always kept in the optimal state to cope with the continuous changes in material composition and structure during the etching of the transition layer. The parameter steady-state adjustment network uses a gradient descent algorithm to achieve optimal adjustment of the groove processing parameters. Gradient descent calculates the gradient of the objective function and adjusts the variables in the opposite direction of the gradient so that the objective function value continues to decrease until it reaches a local minimum. Among them, the objective function can be an indicator reflecting the etching quality such as groove surface roughness, groove particle deposition, and groove structure accuracy, and the variables that need to be adjusted are various etching processing parameters in the etching process, that is, groove processing parameters, such as etching gas concentration, radio frequency power, etc. Through the role of the parameter steady-state adjustment network, the current etching processing parameters of the flexible processing control module are continuously optimized by gradient descent to obtain gradient groove processing parameters to meet the groove structure parameters.

[0071] For example, suppose that when etching the transition layer of a device, the thickness of the transition layer is set to 100nm. The initial groove processing parameters are: CF4 concentration 10%, SF6 concentration 5%, RF power 100W, and etching rate 10nm / s. When etching reaches the middle of the transition layer, it is found that the etching rate gradually decreases to 8nm / s, while the surface roughness shows a slight upward trend. This shows that the current groove processing parameters are no longer adapted to the changes in the composition and structure of the etching transition layer material, and need to be optimized and adjusted. At this time, the parameter steady-state regulation network begins to play a role. Through the gradient descent algorithm, the optimized gradient groove processing parameters are calculated: the CF4 concentration is reduced to 8% to slow down the further decrease in the etching rate, and the RF power is increased to 105W to speed up material removal and improve surface flatness. The third flexible processing mode promptly applies these optimized gradient groove processing parameters to the etching process control to ensure the processing quality of the etching transition layer.

[0072] As the etching process progresses, the parameter steady-state regulation network continuously monitors and dynamically optimizes the groove processing parameters to keep them consistent with the material structure changes of the etching transition layer. Through real-time closed-loop optimization control, dynamic steady-state regulation is achieved during the etching process to overcome the influence of material heterogeneity and obtain ideal etching effects and groove structures.

[0073] Furthermore, the embodiment of the present application also includes:

[0074] Determining the trench sidewalls of the single crystal layer to be etched and the metal silicide layer;

[0075] A protective layer is deposited on the sidewall of the groove, and the protective layer is removed after the groove etching of the flexible processing control module is completed, wherein the protective layer is silicon oxide.

[0076] In a preferred embodiment, by protecting the sidewall material during the etching process, damage to the sidewall caused by etching is effectively prevented, thereby improving the integrity and reliability of the trench structure.

[0077] Before using the flexible processing control module to perform patterned trench etching on the single crystal layer and the metal silicide layer to be etched, it is necessary to first determine the position and range of the trench sidewall. The trench sidewall refers to the vertical side of the trench structure, which together with the bottom of the trench constitutes a complete three-dimensional trench morphology. In a double-layer heterostructure, the trench sidewall spans two materials, the metal silicide layer and the single crystal layer. After determining the position and range of the trench sidewall, a protective layer is deposited on the trench sidewall. The protective layer material can be an insulating material with good chemical stability and strong etching resistance, such as silicon oxide. The purpose of depositing the protective layer is to protect the sidewall material during the etching process to prevent the etching gas or etching liquid from causing physical or chemical damage to the sidewall, resulting in rough, irregular or defective groove edges. Among them, the deposition of the protective layer is achieved by using thin film preparation technologies such as chemical vapor deposition and atomic layer deposition. By adjusting the deposition process parameters, such as gas flow, temperature, pressure, etc., the thickness and coverage of the protective layer are accurately controlled to ensure that it forms a uniform and dense protective film on the sidewall.

[0078] After the deposition of the protective layer is completed, the metal silicide layer and the single crystal layer are subjected to patterned groove etching using a flexible processing control module. During the entire etching process, the protective layer can effectively isolate the sidewall material from the etching environment, prevent the sidewall from being subjected to physical impact or chemical corrosion, and thus ensure the smoothness and regularity of the groove edge. At the same time, since the protective layer material has a high etching selectivity, it can remain stable during the etching process and will not interfere with the etching of the groove. After the flexible processing control module completes the groove etching of the metal silicide layer and the single crystal layer, the protective layer on the groove sidewall is removed. For example, for the silicon oxide protective layer, hydrofluoric acid solution is used for wet etching, or fluoride plasma is used for dry etching. By precisely controlling the removal process parameters and time, the protective layer is ensured to be completely removed without causing additional damage to the groove sidewall material. After removing the protective layer, a high-quality groove structure with smooth and regular sidewalls can be obtained. The groove edge will not be rough, defective or deformed due to etching damage, which is conducive to the construction of subsequent devices and the performance of electrical performance.

[0079] In summary, the flexible processing control method for a trench Schottky structure diode provided in the embodiment of the present application has the following technical effects:

[0080] Determine the single crystal layer to be etched and the metal silicide layer on the single crystal layer to be etched, clarify the etching object, and provide necessary information for the subsequent targeted selection of flexible processing modes. Determine the groove structure parameters, and judge whether the groove is a double-layer etching groove according to the groove structure parameters. If the groove is a double-layer etching groove, start the flexible processing control module. The flexible processing control module performs sub-mode groove etching according to the groove structure parameters, and determines whether sub-mode etching is required by the groove structure parameters. When the groove spans two materials, start the flexible processing control module for sub-mode etching, which can optimize the etching process for different materials and improve the etching effect. Among them, the flexible processing control module performs groove etching on the metal silicide layer according to the first flexible processing mode. If the sensor of the flexible processing module detects a material change, it switches from the first flexible processing mode to the second flexible processing mode to perform groove etching on the single crystal layer to be etched, thereby realizing sub-mode dynamic etching control. By first adopting an etching mode designed specifically for the metal silicide layer, and then switching to an etching mode suitable for the single crystal layer in real time based on material change detection, continuous and stable formation of grooves on different materials is ensured, defects are reduced, and device quality is improved.

[0081] Embodiment 2 is based on the same inventive concept as the method for controlling the flexible processing of a diode with a trench Schottky structure in the above embodiment. Figure 2 As shown, the embodiment of the present application provides a trench Schottky structure diode flexible processing control platform, the platform comprising:

[0082] A material determination unit 11, used to determine a single crystal layer to be etched and a metal silicide layer on the single crystal layer to be etched;

[0083] A flexible etching unit 12 is used to determine the groove structure parameters, and judge whether the groove is a double-layer etched groove according to the groove structure parameters. If the groove is a double-layer etched groove, a flexible processing control module is started, and the flexible processing control module performs a multi-mode groove etching according to the groove structure parameters;

[0084] Among them, the flexible processing control module performs groove etching on the metal silicide layer according to the first flexible processing mode. If the sensor of the flexible processing module detects a material change, the first flexible processing mode is switched to the second flexible processing mode to perform groove etching on the single crystal layer to be etched.

[0085] Furthermore, the flexible etching unit 12 includes the following execution steps:

[0086] If the groove is a double-layer etched groove, decompose the groove structure parameters to output the first groove structure parameters corresponding to the metal silicide layer and the second groove structure parameters corresponding to the single crystal layer to be etched;

[0087] Recording material information of the single crystal layer to be etched and material information of the metal silicide layer;

[0088] Outputting first etching process parameters according to the material information of the metal silicide layer and the first groove structure parameters, wherein the first flexible processing mode performs groove etching on the metal silicide layer according to the first etching process parameters;

[0089] According to the material information of the single crystal layer to be etched and the second groove structure parameters, second etching process parameters are output, and the second flexible processing mode performs groove etching on the single crystal layer according to the second etching process parameters.

[0090] Furthermore, the embodiment of the present application also includes an etching supply control unit, which includes the following execution steps:

[0091] The flexible processing control module is connected to an etching device, and the etching device includes an etching gas supply source and an etching liquid supply source;

[0092] Acquiring a gas supply parameter and a liquid supply parameter according to the first etching process parameter and the second etching process parameter;

[0093] When the flexible processing control module performs trench etching on the metal silicide layer according to the first etching processing parameter, the etching gas supply source supplies gas according to the gas supply parameter;

[0094] When the flexible processing control module performs groove etching on the metal silicide layer according to the second etching processing parameters, the etching liquid supply source supplies according to the liquid supply parameters.

[0095] Furthermore, the embodiment of the present application also includes an etching quality optimization unit, which includes the following execution steps:

[0096] The flexible processing module also includes an etching feedback optimization network;

[0097] Performing quality monitoring on the surface of the formed groove according to the etching feedback optimization network, including groove surface roughness, groove particle deposition and groove structure accuracy;

[0098] Obtaining a groove quality index according to the groove surface roughness, groove particle deposition and groove geometric accuracy;

[0099] If the groove quality index is less than the preset quality index, the current etching process parameters are feedback optimized with the preset quality index as the target.

[0100] Furthermore, the embodiment of the present application further includes a transition layer etching unit, which includes the following execution steps:

[0101] The flexible processing control module also includes a third flexible processing mode;

[0102] Dividing an etching transition layer according to the single crystal layer to be etched and the metal silicide layer, wherein the etching transition layer is an intermediate layer from the metal silicide layer to the single crystal layer to be etched;

[0103] The flexible processing control module performs groove etching on the etching transition layer according to the third flexible processing mode.

[0104] Furthermore, the etching transition layer includes a thickness below the metal silicide layer. and the thickness of the single crystal layer to be etched ,in, , is the trench thickness of the metal silicide layer, is the groove thickness of the single crystal layer to be etched.

[0105] Furthermore, the transition layer etching unit further includes the following execution steps:

[0106] Setting a parameter steady-state adjustment network, wherein the parameter steady-state adjustment network is used to perform a gradient decrease on the current groove processing parameter of the flexible processing control module to obtain a gradient groove processing parameter;

[0107] The third flexible processing mode performs groove etching on the etching transition layer according to the gradient groove processing parameters.

[0108] Furthermore, the embodiment of the present application further includes a side wall protection control unit, which includes the following execution steps:

[0109] The flexible processing control module performs sub-mode groove etching according to the groove structure parameters;

[0110] Determining the trench sidewalls of the single crystal layer to be etched and the metal silicide layer;

[0111] A protective layer is deposited on the sidewall of the groove, and the protective layer is removed after the groove etching of the flexible processing control module is completed, wherein the protective layer is silicon oxide.

[0112] Any step of the method described above can be stored as a computer instruction or program in an unlimited computer memory, and can be called and recognized by an unlimited computer processor to implement any method in the embodiments of the present application, without any unnecessary restrictions.

[0113] Furthermore, the first or second mentioned above may not only represent an order relationship, but may also represent a specific concept, and / or refer to the selection of multiple elements individually or in whole. Obviously, those skilled in the art may make various changes and modifications to the present application without departing from the scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the present application and its equivalents, the present application intends to include these changes and variations.

Claims

1. A method for controlling the flexible processing of a trench Schottky structure diode, characterized in that: The method comprises: Determining a single crystal layer to be etched and a metal silicide layer on the single crystal layer to be etched; Determine the groove structure parameters, judge whether the groove is a double-layer etched groove according to the groove structure parameters, and if the groove is a double-layer etched groove, start the flexible processing control module, and the flexible processing control module performs the multi-mode groove etching according to the groove structure parameters; The flexible processing control module performs groove etching on the metal silicide layer according to the first flexible processing mode, and if the sensor of the flexible processing control module detects a material change, the first flexible processing mode is switched to the second flexible processing mode to perform groove etching on the single crystal layer to be etched; The flexible processing control module also includes a third flexible processing mode; Dividing an etching transition layer according to the single crystal layer to be etched and the metal silicide layer, wherein the etching transition layer is an intermediate layer from the metal silicide layer to the single crystal layer to be etched; The flexible processing control module performs groove etching on the etching transition layer according to the third flexible processing mode; The flexible processing control module performs groove etching on the etching transition layer according to the third flexible processing mode, and the method further includes: Setting a parameter steady-state regulation network, wherein the parameter steady-state regulation network is used to perform a gradient descent on the current groove processing parameters of the flexible processing control module to obtain gradient groove processing parameters, wherein the gradient descent is performed by calculating the gradient of the objective function and adjusting the variables in the opposite direction of the gradient, wherein the variables are processing parameters in the etching process, and the objective function is groove surface roughness, groove particle deposition, or groove structure accuracy; The third flexible processing mode performs groove etching on the etching transition layer according to the gradient groove processing parameters.

2. A method for controlling and processing a diode with a trench Schottky structure as claimed in claim 1, characterized in that: The method comprises: If the groove is a double-layer etched groove, decompose the groove structure parameters to output the first groove structure parameters corresponding to the metal silicide layer and the second groove structure parameters corresponding to the single crystal layer to be etched; Recording material information of the single crystal layer to be etched and material information of the metal silicide layer; Outputting first etching process parameters according to the material information of the metal silicide layer and the first groove structure parameters, wherein the first flexible processing mode performs groove etching on the metal silicide layer according to the first etching process parameters; According to the material information of the single crystal layer to be etched and the second groove structure parameters, second etching process parameters are output, and the second flexible processing mode performs groove etching on the single crystal layer according to the second etching process parameters.

3. A method for controlling and processing a diode with a trench Schottky structure as claimed in claim 2, characterized in that: The flexible processing control module is connected to an etching device, and the etching device includes an etching gas supply source and an etching liquid supply source; Acquiring a gas supply parameter and a liquid supply parameter according to the first etching process parameter and the second etching process parameter; When the flexible processing control module performs trench etching on the metal silicide layer according to the first etching processing parameter, the etching gas supply source supplies according to the gas supply parameter; When the flexible processing control module performs groove etching on the single crystal layer according to the second etching processing parameters, the etching liquid supply source supplies according to the liquid supply parameters.

4. A method for controlling and processing a diode with a trench Schottky structure as claimed in claim 1, characterized in that: The flexible processing control module also includes an etching feedback optimization network, including: Performing quality monitoring on the surface of the formed groove according to the etching feedback optimization network, including groove surface roughness, groove particle deposition and groove structure accuracy; Obtaining a groove quality index according to the groove surface roughness, groove particle deposition and groove geometric accuracy; If the groove quality index is less than the preset quality index, the current etching process parameters are feedback optimized with the preset quality index as the target.

5. The method for controlling the flexible processing of a trench Schottky diode according to claim 1, characterized in that: The etching transition layer includes a thickness below the metal silicide layer and the thickness of the single crystal layer to be etched ,in, , , is the trench thickness of the metal silicide layer, is the groove thickness of the single crystal layer to be etched.

6. A method for controlling and processing a diode with a trench Schottky structure as claimed in claim 1, characterized in that: The flexible processing control module performs mode-based groove etching according to the groove structure parameters, and the method further includes: Determining the trench sidewalls of the single crystal layer to be etched and the metal silicide layer; A protective layer is deposited on the sidewall of the groove, and the protective layer is removed after the groove etching of the flexible processing control module is completed, wherein the protective layer is silicon oxide.

7. A trench Schottky diode flexible processing control platform, characterized in that: A method for controlling and processing a diode with a trench Schottky structure according to any one of claims 1 to 6, the method comprising: A material determination unit, the material determination unit is used to determine the single crystal layer to be etched and the metal silicide layer on the single crystal layer to be etched; A flexible etching unit, the flexible etching unit is used to determine the groove structure parameters, judge whether the groove is a double-layer etched groove according to the groove structure parameters, and if the groove is a double-layer etched groove, start the flexible processing control module, and the flexible processing control module performs the sub-mode groove etching according to the groove structure parameters; Among them, the flexible processing control module performs groove etching on the metal silicide layer according to the first flexible processing mode. If the sensor of the flexible processing control module detects a material change, the first flexible processing mode is switched to the second flexible processing mode to perform groove etching on the single crystal layer to be etched.

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