Electrostatic adsorption device

Abstract

The present invention provides an electrostatic adsorption device, wherein m radially extending first branches are connected to the outer periphery of the central electrode portion, and the first arc portions are connected to the first branches in pairs; m radially extending second branches are connected to the inner periphery of the edge electrode portion; the second arc portions are connected to the second branches in pairs; and the width of each first arc electrode and the second arc electrode is greater than or equal to 0.3 mm and less than or equal to 5 mm. The present invention sets the first electrode area and the second electrode area so that one electrode connection point is electrically connected to the entire electrode area, thereby reducing the wiring space required on the back; at the same time, the width and number of the arc electrodes are set to generate a strong gradient force, thereby improving the adsorption force on the high resistivity substrate to be adsorbed; in addition, an air avoidance area is set to provide a moving space for the substrate to be adsorbed, thereby improving the reliability of the electrostatic adsorption device; finally, the central electrode portion and the edge electrode portion are set to be a full circular ring, thereby maintaining a single electrode connection point while achieving a larger area of ​​electrode area, thereby improving the adsorption force.

Description

Technical Field

[0001] The invention belongs to the field of semiconductor process equipment, and in particular relates to an electrostatic adsorption device. Background Art

[0002] In the semiconductor industry, especially in processes such as etching, chemical vapor deposition (CVD), physical vapor deposition (PVD), ion implantation, electron beam wafer inspection, and extreme ultraviolet lithography (EUVL), electrostatic chucks (ESC) are often used to fix wafers through the Coulomb force or Johnson-Rahbek force (JR) generated between the wafer and the electrode. Compared with traditional mechanical chucks, electrostatic chucks do not require large-sized moving parts, have low risk of particle contamination, and are highly reliable.

[0003] Electrostatic adsorption devices can be divided into unipolar electrostatic adsorption devices and bipolar electrostatic adsorption devices. The unipolar electrostatic adsorption device has only one polarity electrode, and requires a plasma environment to make the wafer carry a charge with an opposite charge to the electrode layer of the electrostatic adsorption device, so as to adsorb the wafer; the unipolar electrostatic adsorption device has a simple structure, and the electrode layer area is generally larger than the bipolar electrostatic adsorption device under the same size, so the adsorption force is stronger, but a grounded cavity or substrate is required to form a complete circuit. The bipolar electrostatic adsorption device applies high voltage with opposite charges on the two electrodes, and the two electrodes and the wafer form a complete circuit, so a plasma environment is not required. Therefore, in non-plasma environments, bipolar electrostatic chucks have been widely used.

[0004] With the rapid development of the process technology of the third and fourth generation semiconductors, the display industry is also making continuous technological breakthroughs. For traditional semiconductor manufacturing processes, simple wafer processing is far from meeting customer needs. High-resistivity substrates such as sapphire and glass substrates can better meet the needs of emerging semiconductor application fields such as the display industry. However, the adsorption and fixation of high-resistivity substrates requires higher electrostatic adsorption force. The bipolar electrostatic chuck in the existing technology can only be used to adsorb silicon wafers, but cannot meet the electrostatic adsorption of high-resistivity substrates such as sapphire and glass substrates.

[0005] Therefore, there is an urgent need for a bipolar electrostatic chuck that can achieve reliable electrostatic adsorption of high-resistivity substrates.

[0006] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because these solutions are described in the background technology part of the present application. Summary of the invention

[0007] In view of the above shortcomings of the prior art, an object of the present invention is to provide an electrostatic adsorption device for solving the problem of poor adsorption reliability of the bipolar electrostatic chuck on the high resistivity substrate in the prior art.

[0008] To achieve the above object, the present invention provides an electrostatic adsorption device, the electrostatic adsorption device comprising: an insulating medium layer, a first electrode region and a second electrode region, wherein the cross section of the insulating medium layer at a preset height is a circular plane;

[0009] The first electrode region includes a central electrode portion, m first branch portions and m groups of first arc portions, each group of the first arc portions includes n first arc electrodes; the central electrode portion is a first arc shape that coincides with the center of the circular plane, the first branch portions extend along the radial direction of the circular plane, and the m first branch portions are all connected to the outer circumference of the central electrode portion; each group of the first arc portions is connected to the first branch portions in pairs, and the n first arc electrodes in the same group of the first arc portions are arcs corresponding to n concentric circles with different radii and larger than the first arc shape at the same central angle;

[0010] The second electrode region includes an edge electrode portion, m second branch portions and m groups of second arc portions, each group of the second arc portions includes n second arc electrodes; the edge electrode portion is a second arc shape that coincides with the center of the circular plane, the second branch portions extend along the radial direction of the circular plane, and the m second branch portions are all connected to the inner circumference of the edge electrode portion; each group of the second arc portions is connected to the second branch portions in pairs, and the n second arc electrodes in the same group of the second arc portions are arcs corresponding to n concentric circles with different radii and smaller than the second arc shape at the same central angle;

[0011] m is an integer greater than or equal to 1, and n is an integer greater than 2; the first electrode region and the second electrode region have opposite electrical polarities; the first arc electrodes and the second arc electrodes radially adjacent to each other along the circular plane are arranged in an interdigitated manner, and the insulating dielectric layer covers the exposed surfaces of the first arc electrodes and the second arc electrodes and fills the gap between the surfaces; the radius of the central electrode portion is smaller than the radius of any of the second arc electrodes, and the radius of the edge electrode portion is larger than the radius of any of the first arc electrodes;

[0012] The length of each of the first arc electrodes along the radial direction of the circular plane is greater than or equal to 0.3 mm and less than or equal to 5 mm, and the length of each of the second arc electrodes along the radial direction of the circular plane is greater than or equal to 0.3 mm and less than or equal to 5 mm.

[0013] Optionally, each group of the first arc portions is distributed on the same side of the first circumferential direction of the circular plane with respect to the first branch portions to which it is connected correspondingly; each group of the second arc portions is distributed on the same side of the second circumferential direction of the circular plane with respect to the second branch portions to which it is connected correspondingly; one of the first circumferential direction and the second circumferential direction is clockwise, and the other is counterclockwise.

[0014] Optionally, each group of the first arc portions is distributed on one side of the first circumferential direction of the circular plane and on one side of the second circumferential direction of the circular plane of its correspondingly connected first branch portion; each group of the second arc portions is distributed on one side of the first circumferential direction of the circular plane and on one side of the second circumferential direction of the circular plane of its correspondingly connected second branch portion; one of the first circumferential direction and the second circumferential direction is clockwise, and the other is counterclockwise.

[0015] Optionally, there is a radial avoidance area on the circular plane where the first branch portion and the second branch portion are located, and the first arc electrode, the second arc electrode, the first branch portion and the second branch portion close to the avoidance area are deformed to obtain a space for setting the avoidance area.

[0016] Optionally, the interior of the central electrode portion is a hollow hole.

[0017] Optionally, the central electrode portion is a major arc with an opening; or the central electrode portion is a full circular ring;

[0018] The edge electrode portion is a major arc with an opening; or the edge electrode portion is a full circular ring.

[0019] Optionally, the area ratio of the first electrode region to the second electrode region is greater than 0 and less than or equal to 10, or the area ratio of the second electrode region to the first electrode region is greater than 0 and less than or equal to 10.

[0020] Optionally, an area ratio of the first electrode region to the second electrode region is equal to 1.

[0021] Optionally, the radial length of each of the first arc electrodes along the circular plane is greater than or equal to 0.3 mm and less than 0.5 mm, and the radial length of each of the second arc electrodes along the circular plane is greater than or equal to 0.3 mm and less than 0.5 mm.

[0022] Optionally, the radial length of each of the first circular arc electrodes along the circular plane is equal to the radial length of each of the second circular arc electrodes along the circular plane.

[0023] Optionally, the spacing distances between the first arc electrodes and the second arc electrodes that are adjacent to each other in the radial direction of the circular plane are equal.

[0024] Optionally, the spacing distance between each of the first arc electrodes and the second arc electrodes that are adjacent to each other in the radial direction of the circular plane is greater than or equal to 0.5 mm and less than or equal to 10 mm.

[0025] Optionally, the electrostatic adsorption device further comprises a protective layer, the protective layer covers the insulating medium layer, the protective layer is used to contact with the substrate to be adsorbed by the electrostatic adsorption device, and the volume resistivity of the protective layer is greater than or equal to 10 14 Ω·cm.

[0026] Optionally, the volume resistivity of the insulating dielectric layer is greater than or equal to 10 14 Ω·cm.

[0027] As described above, the electrostatic adsorption device of the present invention has the following beneficial effects:

[0028] The present invention uses the distribution mode of the first electrode area and the second electrode area to enable the entire electrode to be electrically connected through one electrode connection point, which is beneficial to reducing the wiring space required on the back of the electrostatic adsorption device and facilitating the integration and debugging of the electrostatic adsorption device.

[0029] The present invention generates a gradient force with a strong electric field strength by setting the width and number of the first arc electrode and the second arc electrode along the radial direction of the circular plane, thereby greatly improving the adsorption force of the electrostatic adsorption device, thereby achieving adsorption reliability for a substrate to be adsorbed with a higher resistivity;

[0030] The present invention provides a space for the electrostatic adsorption device to move during the handover process of transferring the substrate to be adsorbed by setting an air avoidance area, thereby avoiding collision, improving the reliability of the electrostatic adsorption device and protecting the substrate to be adsorbed and the handover device;

[0031] The present invention arranges the central electrode portion and the edge electrode portion to be a full-circle ring, thereby maintaining a single electrode connection point while achieving a larger area of ​​electrode distribution, thereby further improving the adsorption capacity. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 Shown is a schematic side cross-sectional view of half of the electrostatic adsorption device in Example 1 of the present invention.

[0033] Figure 2 It is a schematic diagram showing the distribution change of the electrostatic adsorption force pressure along the radial direction of the circular plane in Example 1 of the present invention.

[0034] Figure 3Shown is a partially enlarged detail view of the side cross-sectional view of the electrostatic adsorption device in Example 1 of the present invention.

[0035] Figure 4 It is a schematic diagram of an overall top view of the electrostatic adsorption device in Example 1 of the present invention.

[0036] Figure 5 Shown is an enlarged view of the details of part A of the electrostatic adsorption device in Example 1 of the present invention.

[0037] Figure 6 Shown is an enlarged view of the details of part B of the electrostatic adsorption device in Example 1 of the present invention.

[0038] Figure 7 The table shows the correspondence between the area ratio of the first electrode region and the second electrode region and the electrostatic adsorption force in Example 1 of the present invention.

[0039] Figure 8 It shows a curve diagram of the corresponding relationship between the area ratio of the first electrode region and the second electrode region and the electrostatic adsorption force in Example 1 of the present invention.

[0040] Fig. 9 Shown is a schematic diagram of an overall top view of the electrostatic adsorption device in Example 2 of the present invention.

[0041] Fig.10 Shown is a schematic diagram of an overall top view of an electrostatic adsorption device in an example of embodiment 2 of the present invention.

[0042] Fig.11 Shown is an enlarged view of the details of part C of the electrostatic adsorption device in an example of embodiment 2 of the present invention.

[0043] Fig.12 Shown is an enlarged view of the details of part D of the electrostatic adsorption device in an example of embodiment 2 of the present invention.

[0044] Fig.13 Shown is an enlarged view of the details of part E of the electrostatic adsorption device in an example of embodiment 2 of the present invention.

[0045] Fig.14 Shown is a schematic diagram of an overall top view of the electrostatic adsorption device in Example 3 of the present invention.

[0046] Fig.15 Shown is an enlarged view of the details of part F of the electrostatic adsorption device in Example 3 of the present invention.

[0047] Fig.16 Shown is an enlarged view of the details of the electrostatic adsorption device G in Example 3 of the present invention.

[0048] Fig.17 It shows an enlarged view of the details of the electrostatic adsorption device H in Example 3 of the present invention.

[0049] Fig.18 Shown is a schematic diagram of an overall top view of the electrostatic adsorption device in Example 4 of the present invention.

[0050] Fig.19 Shown is a schematic diagram of an overall top view of an electrostatic adsorption device in an example of embodiment 4 of the present invention.

[0051] Fig. 20 Shown is an enlarged view of the details of part I of the electrostatic adsorption device in an example of embodiment 4 of the present invention.

[0052] Fig.21 Shown is an enlarged view of the details of part J of the electrostatic adsorption device in an example of embodiment 4 of the present invention.

[0053] Fig. 22 Shown is an enlarged view of the details of the electrostatic adsorption device K in an example of embodiment 4 of the present invention.

[0054] Fig.23 Shown is a schematic diagram of an overall top view of an electrostatic adsorption device in an example of embodiment 4 of the present invention.

[0055] Fig.24 Shown is an enlarged view of the details of the electrostatic adsorption device L in an example of embodiment 4 of the present invention.

[0056] Fig.25 Shown is an enlarged view of the details of the electrostatic adsorption device M in an example of embodiment 4 of the present invention.

[0057] Fig.26 Shown is an enlarged view of the details of the electrostatic adsorption device N in an example of embodiment 4 of the present invention.

[0058] Component number description

[0059] 10. carrier layer; 11. radial direction; 12. central axis; 13. first circumferential direction; 14. second circumferential direction;

[0060] 20. Insulating dielectric layer;

[0061] 311, first arc electrode; 312, first branch portion; 321, second arc electrode; 322, second branch portion; 33, air-avoiding area; 34, hollow hole; 35, central electrode portion; 361, first electrode connecting line; 362, second electrode connecting line; 363, power supply; 37, edge electrode portion;

[0062] 40. substrate to be adsorbed; 41. bump layer. DETAILED DESCRIPTION

[0063] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0064] For example, when describing the embodiments of the present invention in detail, for the sake of convenience, the schematic diagrams showing the device structure will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0065] For convenience of description, spatially relative terms such as "under", "below", "below", "below", "above", "on", etc. may be used herein to describe the relationship of one element or feature shown in the drawings to other elements or features. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the drawings.

[0066] In the context of the present application, a structure in which a first feature is described as being "above" a second feature may include embodiments in which the first and second features are in direct contact, and may also include embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0067] It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and therefore the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated. Embodiment 1:

[0068] This embodiment provides an electrostatic adsorption device, such as Figure 1 , Figure 3-Figure 6 As shown, Figure 1 is a side cross-sectional view of the electrostatic adsorption device along the right half of the central axis 12, Figure 3 for Figure 1 A partial enlarged detail of Figure 4 It is the overall top view of the electrostatic adsorption device. Figure 5 for Figure 4 A detailed enlarged picture of part A. Figure 6 for Figure 4 In the enlarged detail view of part B, the electrostatic adsorption device includes: an insulating dielectric layer 20, a first electrode region and a second electrode region. The cross-section of the insulating dielectric layer 20 at a preset height is a circular plane.

[0069] The first electrode area includes a central electrode portion 35, m first branch portions 312 and m groups of first arc portions, each group of first arc portions includes n first arc electrodes 311; the central electrode portion 35 is a first arc shape that coincides with the center of the circular plane, the first branch portions 312 extend along the radial direction 11 of the circular plane, and the m first branch portions 312 are all connected to the outer circumference of the central electrode portion 35; each group of first arc portions is connected to the first branch portions 312 in pairs, and the n first arc electrodes 311 in the same group of first arc portions are arcs corresponding to n concentric circles with different radii and larger than the first arc shape at the same central angle.

[0070] The second electrode area includes an edge electrode portion 37, m second branch portions 322 and m groups of second arc portions, each group of second arc portions includes n second arc electrodes 321; the edge electrode portion 37 is a second arc shape that coincides with the center of the circular plane, the second branch portions 322 extend along the radial direction 11 of the circular plane, and the m second branch portions 322 are all connected to the inner circumference of the edge electrode portion 37; each group of second arc portions is connected to the second branch portions 322 in pairs, and the n second arc electrodes 321 in the same group of second arc portions are arcs corresponding to n concentric circles with different radii and smaller than the second arc shape at the same central angle.

[0071] m is an integer greater than or equal to 1, and n is an integer greater than 2; the electrical polarity of the first electrode region is opposite to that of the second electrode region; the first arc electrodes 311 and the second arc electrodes 321 adjacent to each other along the radial direction 11 of the circular plane are arranged in an interlaced manner, and the insulating dielectric layer 20 covers the exposed surfaces of the first arc electrodes 311 and the second arc electrodes 321 and fills the gap between their surfaces; the radius of the central electrode portion 35 is smaller than the radius of any second arc electrode 321, and the radius of the edge electrode portion 37 is larger than the radius of any first arc electrode 311.

[0072] The length of each first arc electrode 311 along the radial direction 11 of the circular plane is greater than or equal to 0.3 mm and less than or equal to 5 mm, and the length of each second arc electrode 321 along the radial direction 11 of the circular plane is greater than or equal to 0.3 mm and less than or equal to 5 mm.

[0073] In the prior art, since bipolar electrostatic chucks do not require a plasma environment, they have been widely used in non-plasma environments. However, with the rapid development of the process technology of the third and fourth generation semiconductors, the traditional semiconductor manufacturing process and simple wafer processing are far from meeting customer needs. High-resistivity substrates such as sapphire and glass substrates can better meet the needs of emerging semiconductor application fields. However, since the surface free charge of the high-resistivity substrate is far less than the free charge on the surface of the silicon wafer, it is more difficult to form polarized charges. The adsorption and fixation of the high-resistivity substrate has higher requirements for the electrostatic adsorption force. The bipolar electrostatic chuck in the prior art can only be used to adsorb silicon wafers, but cannot meet the electrostatic adsorption of high-resistivity substrates such as sapphire and glass substrates.

[0074] The present invention increases the density of arc electrodes that can be accommodated by the electrostatic adsorption device by setting the distribution of the first electrode area and the second electrode area, and coordinating the width of the first arc electrode 311 and the second arc electrode 321 along the radial direction 11 of the circular plane, so that when a potential difference is applied between the electrodes, a stronger non-uniform electric field can be formed on the attraction surface of the insulating dielectric layer 20 between the electrodes, such as Figure 2 The figure shows the electrostatic adsorption pressure of the Maxwell downward surface distributed along the radial direction 11 of the circular plane obtained by simulation when two electrodes are respectively applied with 1KV power supplies 363 of opposite polarity. It can be seen that a non-uniform high-intensity electric field is formed. The insulating medium layer 20 is partially polarized in the non-uniform electric field, and a gradient force of attraction is generated in the direction of strong electric field intensity, thereby greatly improving the adsorption force that the electrostatic adsorption device can provide. It can not only better adsorb semiconductor substrates and conductor substrates, but also achieve reliable adsorption of insulating substrates with higher resistivity as the substrate to be adsorbed 40, thereby improving the flexibility and adaptability of the electrostatic adsorption device. At the same time, the distributed connection method of the central electrode portion 35, the first branch portion 312, the first arc portion, the edge electrode portion 37, the second branch portion 322 and the second arc portion is used to achieve that the first electrode area and the second electrode area can be electrically connected to each other with only one electrical connection point, which is beneficial to reducing the wiring space required on the back of the electrostatic adsorption device, facilitating the integration and debugging of the electrostatic adsorption device, and facilitating the lightness and miniaturization of the electrostatic adsorption device.

[0075] Specifically, the "cross section of the insulating dielectric layer 20 at a preset height" is a plane passing through the first electrode region and the second electrode region, so that the circular plane can be used as a position reference plane for describing various parts in the first electrode region and the second electrode region.

[0076] Specifically, Figure 3 Shown Figure 1In the locally enlarged detail diagram, the electrode connection point of the first electrode area is electrically connected to one end of the first electrode connection line 361, the electrode connection point of the second electrode area is electrically connected to one end of the second electrode connection line 362, and the other end of the first electrode connection line 361 (not connected to the first electrode area) and the other end of the second electrode connection line 362 (not connected to the second electrode area) are respectively connected to two electrodes of the power supply 363, so as to supply power to the first electrode area and the second electrode area.

[0077] In one embodiment, the first electrode connection line 361 is fixedly connected to the first branch portion 312 by brazing, conductive adhesive bonding, or the like; the second electrode connection line 362 is fixedly connected to the second branch portion 322 by brazing, conductive adhesive bonding, or the like.

[0078] In one embodiment, the first electrode region is electrically connected to the positive electrode of the power source 363 , and the second electrode region is electrically connected to the negative electrode of the power source 363 .

[0079] In one embodiment, the first electrode region is electrically connected to the negative electrode of the power source 363 , and the second electrode region is electrically connected to the positive electrode of the power source 363 .

[0080] Specifically, Figure 1 As shown, the insulating dielectric layer 20 covers all exposed surfaces of the first electrode region and each part of the second electrode region and fills the gap between any adjacent parts of the first electrode region and the second electrode region to ensure that the first electrode region is not short-circuited with the second electrode region and protect the electrodes from oxidation or damage.

[0081] In this embodiment, Figure 4-Figure 6 As shown, Figure 4 It is the overall top view of the electrostatic adsorption device. Figure 5 for Figure 4 A detailed enlarged picture of part A. Figure 6 for Figure 4 In the enlarged detail view of the B part, each group of first arc portions is distributed on the same side of the first branch portion 312 connected to it along the first circumferential direction 13 of the circular plane; each group of second arc portions is distributed on the same side of the second branch portion 322 connected to it along the second circumferential direction 14 of the circular plane; one of the first circumferential direction 13 and the second circumferential direction 14 is clockwise, and the other is counterclockwise. In this embodiment, the first circumferential direction 13 is counterclockwise, and the second circumferential direction 14 is clockwise. In other embodiments, it can also be that the first circumferential direction 13 is clockwise, and the second circumferential direction 14 is counterclockwise.

[0082] Specifically, in this embodiment, Figure 4 As shown, the interior of the center electrode portion 35 is filled with the insulating dielectric layer 20 .

[0083] In one embodiment, Figure 4 As shown, the first electrode area includes a central electrode portion 35, three first branch portions 312 and three groups of first arc portions, the angle between two adjacent first branch portions 312 is 120°, and each group of first arc portions includes 11 first arc electrodes 311; the second electrode area includes an edge electrode portion 37, three second branch portions 322 and three groups of second arc portions, the angle between two adjacent second branch portions 322 is 120°, and each group of second arc portions includes 11 second arc electrodes 321; the edge electrode portion 37 is a major arc with an opening, and the central electrode portion 35 is a full circular ring.

[0084] In one embodiment, the central electrode portion 35 is a major arc with an opening.

[0085] In one embodiment, the edge electrode portion 37 is in the shape of a full circle.

[0086] The present invention sets the central electrode portion 35 or the edge electrode portion 37 as a full circular ring, which can improve the space utilization of the arc electrode while ensuring that the first electrode area and the second electrode area can each be connected through an electrode connection point, thereby obtaining a higher electrode density on the same area, thereby generating a greater gradient force, further improving the adsorption force of the electrostatic adsorption device, and improving the adsorption reliability of the high-resistivity substrate 40 to be adsorbed.

[0087] In one embodiment, the central arc portion, the first arc portion and the first branch portion 312 may be an integrally formed structure, and the edge arc portion, the second arc portion and the second branch portion 322 may be an integrally formed structure.

[0088] In one embodiment, the first electrode region and the second electrode region are made of a material with a high melting point and high conductivity, such as tungsten, silver, platinum, copper, etc.

[0089] Specifically, after the first electrode region and the second electrode region are set on the carrier layer 10, the insulating dielectric layer 20 is covered on the first electrode region and the second electrode region, so that the insulating dielectric layer 20 completely covers the exposed surfaces of the first electrode region and the second electrode region and fills the gaps between adjacent parts of the first electrode region and the second electrode region.

[0090] In one embodiment, the area ratio of the first electrode region to the second electrode region is greater than 0 and less than or equal to 10, or the area ratio of the second electrode region to the first electrode region is greater than 0 and less than or equal to 10.

[0091] In one embodiment, the area ratio of the first electrode region to the second electrode region is greater than or equal to 1 and less than or equal to 5, or the area ratio of the second electrode region to the first electrode region is greater than or equal to 1 and less than or equal to 5.

[0092] In one embodiment, an area ratio of the first electrode region to the second electrode region is equal to 1.

[0093] The present invention can maximize the gradient force by setting the first electrode region and the second electrode region to be equal in area, thereby maximizing the adsorption force generated by the first electrode region and the second electrode region. Specifically, Figure 7 The table shows the corresponding relationship between the area ratio of the first electrode region and the second electrode region and the electrostatic adsorption force obtained by simulation. Figure 8 The figure shows the corresponding relationship curve between the area ratio of the first electrode area and the second electrode area and the electrostatic adsorption force obtained by simulation. It can be seen that when the area ratio of the first electrode area and the second electrode area is 1, the electrostatic adsorption force is the largest and is much higher than the electrostatic adsorption forces of other area ratios. Setting the area ratio to 1 can maximize the electrostatic adsorption force.

[0094] In one embodiment, the radial length L1 of each first arc electrode 311 along the circular plane is greater than or equal to 0.3 mm and less than 0.5 mm, and the radial length L2 of each second arc electrode 321 along the circular plane is greater than or equal to 0.3 mm and less than 0.5 mm.

[0095] The present invention minimizes the width of the first arc electrode 311 by setting the length range of the first arc electrode 311 and the second arc electrode 321 along the radial direction 11 of the circular plane, while ensuring that the arc electrodes will not produce adverse phenomena such as high-voltage breakdown due to being too close, so as to maximize the gradient force that the electrostatic adsorption device can generate, while ensuring the normal operation of the electrode to generate adsorption force.

[0096] In one embodiment, a radial length L1 of each first arc electrode 311 along a circular plane is equal to a radial length L2 of each second arc electrode 321 along a circular plane.

[0097] The present invention sets the first arc electrode 311 and the second arc electrode 321 to have equal lengths along the circular plane radial direction 11, so that the electrostatic adsorption device can generate a higher non-uniform electric field strength, make the gradient force stronger, and improve the adsorption reliability of the high resistivity substrate 40 to be adsorbed.

[0098] In one embodiment, the spacing distances D1 between the first arc electrodes 311 and the second arc electrodes 321 adjacent to each other along the radial direction 11 of the circular plane are equal.

[0099] The present invention sets the spacing distance between the adjacent first arc electrodes 311 and the second arc electrodes 321 along the radial direction 11 of the circular plane to be equal, so that the electrostatic adsorption device can generate a higher non-uniform electric field strength, make the gradient force stronger, and improve the adsorption reliability of the high-resistivity substrate 40 to be adsorbed.

[0100] In one embodiment, the spacing distance D1 between each of the first arc electrodes 311 and the second arc electrodes 321 adjacent to each other along the radial direction 11 of the circular plane is greater than or equal to 0.5 mm and less than or equal to 10 mm.

[0101] The present invention sets the spacing distance range between the first arc electrode 311 and the second arc electrode 321 adjacent to each other in the radial direction 11, so that the spacing distance will not be too large to cause a significant reduction in the area of ​​the first electrode area and the second electrode area, thereby avoiding affecting the strength of the electrostatic adsorption force; at the same time, the spacing distance will not be too small to cause poor insulation isolation between the first arc electrode 311 and the second arc electrode 321, thereby avoiding causing adverse phenomena such as high-voltage breakdown.

[0102] Preferably, the spacing distance between each of the first arc electrodes 311 and the second arc electrodes 321 adjacent to each other along the radial direction 11 of the circular plane is 3 mm.

[0103] In one embodiment, the spacing distance D1 between the first arc electrodes 311 and the second arc electrodes 321 adjacent to each other along the radial direction 11 of the circular plane is equal, so that the first arc electrodes 311 and the second arc electrodes 321 are evenly distributed, which can further maximize the electrostatic adsorption force; at this time, R 1（a+1） =R 1a +2*D1+L1+L2, where R 1（a+1） is the radius of the first arc electrode 311 of the a+1th layer along the circular plane radial direction 11 outward from the central electrode portion 35, R 1a is the radius corresponding to the first arc electrode 311 of the a-th layer; R 2（a+1） =R 2a +2*D1+L1+L2, where R 2（a+1） is the radius of the a+1th layer of the second arc electrode 321 along the circular plane radial direction 11 outward from the central electrode portion 35, R 2a is the radius corresponding to the a-th layer second arc electrode 321.

[0104] Preferably, the electrostatic adsorption device further comprises a protective layer, which covers the insulating medium layer 20, and is used to contact with the substrate 40 to be adsorbed by the electrostatic adsorption device, and the volume resistivity of the protective layer is greater than or equal to 10 14 Ω·cm.

[0105] The present invention can improve the wear resistance of the electrostatic adsorption device by setting a protective layer on the surface of the insulating medium layer 20, and improve the service life and reliability of the electrostatic adsorption device; at the same time, by using the insulating medium layer 20 with high body resistivity, the leakage current of the electrostatic adsorption device is reduced, so that the electrostatic adsorption device can maintain the adsorption of the substrate 40 to be adsorbed for a longer time, thereby improving the adsorption reliability of the electrostatic adsorption device.

[0106] In one embodiment, Figure 1 As shown, a bump layer 41 may be provided between the insulating medium layer 20 and the protective layer (not shown in the figure) of the electrostatic adsorption device, and the protective layer covers the exposed surface of the bump layer 41 .

[0107] In one embodiment, the material of the bump layer 41 is consistent with the material of the insulating dielectric layer 20 .

[0108] In one embodiment, the bump layer 41 can be formed on the insulating dielectric layer 20 by processes such as exposure, etching, and sandblasting.

[0109] In one embodiment, the protection layer can be combined with the bump layer 41 by vapor deposition, magnetron sputtering or other processes.

[0110] Specifically, the electrostatic adsorption device provided with the convex point layer 41 increases the particle accommodation space between the substrate 40 to be adsorbed and the electrostatic adsorption device through the presence of the convex points, reduces the risk of particles directly getting stuck on the contact surface between the substrate 40 to be adsorbed and the electrostatic adsorption device, causing surface damage to the substrate 40 to be adsorbed, and improves the yield of the substrate 40 to be adsorbed after adsorption by the electrostatic adsorption device; but at the same time, the presence of the convex point layer 41 will reduce the polarization electric field between the substrate 40 to be adsorbed and the electrostatic adsorption device, thereby reducing the adsorption force strength of the electrostatic adsorption device on the substrate 40 to be adsorbed. Those skilled in the art can choose whether to set the convex point layer 41 according to the requirements of the surface quality and adsorption force strength of the substrate 40 to be adsorbed in actual applications. This embodiment is mainly used to provide a stronger adsorption force for the substrate 40 to be adsorbed with a high resistivity, so it is preferably not to set the convex point layer 41.

[0111] Preferably, the volume resistivity of the insulating dielectric layer 20 is greater than or equal to 10 14 Ω·cm.

[0112] The present invention can reduce the leakage current of the electrostatic adsorption device by using the insulating medium layer 20 with high volume resistivity, so that the electrostatic adsorption device can maintain the adsorption of the substrate 40 to be adsorbed for a longer time, thereby improving the adsorption reliability of the electrostatic adsorption device.

[0113] In one embodiment, the thickness of the insulating dielectric layer 20 is 10 micrometers to 1 millimeter.

[0114] The present invention ensures that a stronger gradient force is generated by setting the thickness range of the insulating medium layer 20 to achieve a better adsorption effect on the substrate 40 to be adsorbed.

[0115] Preferably, the insulating dielectric layer 20 has a high melting point.

[0116] In one embodiment, the insulating dielectric layer 20 is made of a material with a high melting point and high bulk resistivity, such as aluminum oxide, AlN, or polyimide.

[0117] In one embodiment, the volume resistivity of the substrate 40 to be adsorbed is greater than or equal to 10 13 Specifically, the volume resistivity of the substrate 40 to be adsorbed can also be a smaller value, but only when the volume resistivity of the substrate 40 to be adsorbed is higher can the solution of the present invention achieve the adsorption effect on the high resistivity substrate 40 to be adsorbed that cannot be adsorbed by the prior art.

[0118] In one embodiment, the substrate 40 to be adsorbed is sapphire, a glass substrate, a ceramic substrate, etc., or other suitable materials.

[0119] In one embodiment, Figure 1 As shown, the electrostatic adsorption device also includes a carrier layer 10 , the first electrode region and the second electrode region are located on the upper surface of the carrier layer 10 , and the insulating medium layer 20 filling the gap between the first electrode region and the second electrode region is also located on the upper surface of the carrier layer 10 .

[0120] In one embodiment, the first electrode region and the second electrode region can be connected to the bottom carrier layer 10 respectively by spraying, vapor deposition or printing, and then sintered at high temperature to tightly combine the first electrode region and the second electrode region with the carrier layer 10.

[0121] In one embodiment, the insulating dielectric layer 20 can be tightly combined with the bottom carrier layer 10 by printing, casting, high temperature co-firing or other processes.

[0122] In one embodiment, after the basic structure of the electrostatic adsorption device is prepared, the final electrostatic adsorption device is processed and manufactured through grinding, polishing and cleaning. Embodiment 2:

[0123] This embodiment provides an electrostatic adsorption device. Other features of the electrostatic adsorption device are basically the same as those of Embodiment 1, except that:

[0124] In this embodiment, Fig. 9 As shown, the interior of the central electrode portion 35 is a hollow hole 34 .

[0125] The present invention provides a hollow hole 34 inside the central electrode portion 35 to provide a moving space for the electrostatic adsorption device during the process of transferring the adsorption substrate 40 to be transferred, thereby avoiding collision and damage between the transfer device and the electrostatic adsorption device during vertical movement, thereby improving the reliability and safety of the electrostatic adsorption device and protecting the adsorption substrate 40 to be transferred and the transfer device.

[0126] In one embodiment, Fig. 9As shown, the first electrode area includes a central electrode portion 35, three first branch portions 312 and three groups of first arc portions, each group of first arc portions includes 11 first arc electrodes 311; the second electrode area includes an edge electrode portion 37, three second branch portions 322 and three groups of second arc portions, each group of second arc portions includes 11 second arc electrodes 321; the edge electrode portion 37 is a major arc with an opening, and the central electrode portion 35 is a full circular ring.

[0127] In one embodiment, Figure 10-13 As shown, Fig.10 It is the overall top view of the electrostatic adsorption device. Fig.11 for Fig.10 A magnified view of the details of part C of the electrostatic adsorption device. Fig.12 for Fig.10 A magnified view of the details of part D of the electrostatic adsorption device. Fig.13 for Fig.10 In the enlarged detail view of part E of the electrostatic adsorption device, there is an air avoidance area 33 on the radial direction 11 of the circular plane where the first branch portion 312 and the second branch portion 322 are located, and the first arc electrode 311, the second arc electrode 321, the first branch portion 312 and the second branch portion 322 close to the air avoidance area 33 are deformed to obtain a space for setting the air avoidance area 33.

[0128] The present invention provides a space for the fixed structure of the electrostatic adsorption device in the process chamber and the extension and retraction of the ejector pin by setting a clearance area 33 on the radial direction 11 of the circular plane where the first branch portion 312 and the second branch portion 322 are located, thereby improving the reliability of the fixed installation of the electrostatic adsorption device in the process chamber. Specifically, when the clearance area 33 passing through the electrostatic adsorption device is required to fix the electrostatic adsorption device or extend and retract the ejector pin, the clearance area 33 is set as needed.

[0129] Specifically, Fig.10 As shown, three air avoidance areas 33 are included, and other suitable numbers of air avoidance areas 33 may be selected according to requirements.

[0130] In one embodiment, Fig.10 As shown, the first electrode area includes a central electrode portion 35, three first branch portions 312 and three groups of first arc portions, each group of first arc portions includes 11 first arc electrodes 311; the second electrode area includes an edge electrode portion 37, three second branch portions 322 and three groups of second arc portions, each group of second arc portions includes 11 second arc electrodes 321; the edge electrode portion 37 is a major arc with an opening, and the central electrode portion 35 is a full circular ring. Embodiment 3:

[0131] This embodiment provides an electrostatic adsorption device. Other features of the electrostatic adsorption device are basically the same as those of Embodiment 1, except that:

[0132] In this embodiment, Figure 14-17 As shown, Fig.14 It is the overall top view of the electrostatic adsorption device. Fig.15 for Fig.14 A magnified view of the details of part F of the electrostatic adsorption device. Fig.16 for Fig.14 A magnified view of the details of part G of the electrostatic adsorption device. Fig.17 for Fig.14 In the enlarged detail view of the H part of the electrostatic adsorption device, each group of first arc portions is distributed on one side of the first circumferential direction 13 of the circular plane and on one side of the second circumferential direction 14 of the circular plane at its corresponding connected first branch portion 312; each group of second arc portions is distributed on one side of the first circumferential direction 13 of the circular plane and on one side of the second circumferential direction 14 of the circular plane at its corresponding connected second branch portion 322; one of the first circumferential direction 13 and the second circumferential direction 14 is clockwise, and the other is counterclockwise.

[0133] The present invention realizes another different electrode arrangement mode by setting the arrangement direction of the arc portion corresponding to the branch portion different from that in Example 1. Those skilled in the art can select a suitable electrode arrangement mode according to specific needs.

[0134] Specifically, in the above content, Fig.15As shown, “each group of first arc portions is distributed on one side of the first branch portion 312 connected to the corresponding one along the first circumferential direction 13 of the circular plane and on one side of the second circumferential direction 14 of the circular plane” means that any first arc electrode 311 in any group of first arc portions extends from the corresponding first branch portion 312 along one side of the first circumferential direction 13 of the circular plane and along one side of the second circumferential direction 14 of the circular plane respectively at the same time, and any first arc electrode 311 in any group of first arc portions is distributed on one side of the first branch portion 312 connected to the corresponding one along the first circumferential direction 13 of the circular plane and on one side of the second circumferential direction 14 of the circular plane, and is connected to form an integral first arc electrode 31 through the first branch portion 312. 1; “Each group of second arc portions is distributed on one side of the corresponding second branch portion 322 along the first circumferential direction 13 of the circular plane and on one side of the second circumferential direction 14 of the circular plane” means that any second arc electrode 321 in any group of second arc portions extends from the corresponding second branch portion 322 along one side of the first circumferential direction 13 of the circular plane and along one side of the second circumferential direction 14 of the circular plane respectively at the same time, and any second arc electrode 321 in any group of second arc portions is distributed on one side of the corresponding second branch portion 322 along the first circumferential direction 13 of the circular plane and along one side of the second circumferential direction 14 of the circular plane, and is connected to an integral second arc electrode 321 through the second branch portion 322.

[0135] In one embodiment, Fig.15 As shown, in each group of first arc portions, the first arc electrodes 311 distributed on the side of the first circumferential direction 13 of the circular plane and the first arc electrodes 311 distributed on the side of the second circumferential direction 14 of the circular plane to which the corresponding first arc portions are connected are symmetrically distributed about the corresponding first branch portions 312; in each group of second arc portions, the second arc electrodes 321 distributed on the side of the second circumferential direction 13 of the circular plane and the second arc electrodes 321 distributed on the side of the second circumferential direction 14 of the circular plane to which the corresponding second branch portions 322 are connected are symmetrically distributed about the corresponding second branch portions 322.

[0136] In one embodiment, in each group of first arc portions, the first arc electrodes 311 distributed on the side of the first circumferential direction 13 of the circular plane and the first arc electrodes 311 distributed on the side of the second circumferential direction 14 of the circular plane to which the corresponding first arc portions are connected are asymmetrically distributed with respect to the corresponding first branch portions 312; in each group of second arc portions, the second arc electrodes 321 distributed on the side of the second circumferential direction 13 of the circular plane and the second arc electrodes 321 distributed on the side of the second circumferential direction 14 of the circular plane to which the corresponding second branch portions 322 are connected are asymmetrically distributed with respect to the corresponding second branch portions 322.

[0137] Specifically, in this embodiment, Fig.14As shown, the interior of the center electrode portion 35 is filled with the insulating dielectric layer 20 . Embodiment 4:

[0138] This embodiment provides an electrostatic adsorption device. Other features of the electrostatic adsorption device are basically the same as those of Embodiment 3, except that:

[0139] In this embodiment, Fig.18 As shown, the interior of the central electrode portion 35 is a hollow hole 34 .

[0140] The present invention provides a hollow hole 34 inside the central electrode portion 35 to provide a moving space for the electrostatic adsorption device during the process of transferring the substrate 40 to be adsorbed, thereby avoiding collision between the moving device or the substrate 40 to be adsorbed and the electrostatic adsorption device and causing damage, thereby improving the reliability and safety of the electrostatic adsorption device and protecting the substrate 40 to be adsorbed and the transfer device.

[0141] In one embodiment, Fig.18 As shown, the first electrode region includes a central electrode portion 35, a first branch portion 312 and a group of first arc portions, each group of first arc portions includes 11 first arc electrodes 311; the second electrode region includes an edge electrode portion 37, a second branch portion 322 and a group of second arc portions, each group of second arc portions includes 11 second arc electrodes 321.

[0142] In one embodiment, Figure 19-22 As shown, Fig.19 It is the overall top view of the electrostatic adsorption device. Fig. 20 for Fig.19 A magnified view of the details of part I of the electrostatic adsorption device. Fig.21 for Fig.19 A magnified view of the details of part J of the electrostatic adsorption device. Fig. 22 for Fig.19 The enlarged detail view of the K part of the electrostatic adsorption device shows that the first electrode area includes a central electrode portion 35, three first branch portions 312 and three groups of first arc portions, each group of first arc portions includes 23 first arc electrodes 311; the second electrode area includes an edge electrode portion 37, three second branch portions 322 and three groups of second arc portions, each group of second arc portions includes 23 second arc electrodes 321; the central electrode portion 35 and the edge electrode portion 37 are both in the shape of a full circle.

[0143] In one embodiment, Figure 23-Figure 26 As shown, Fig.23 It is the overall top view of the electrostatic adsorption device. Fig.24 for Fig.23 A magnified view of the L part of the electrostatic adsorption device. Fig.25 for Fig.23A magnified view of the details of the M part of the electrostatic adsorption device. Fig.26 for Fig.23 In the enlarged detail view of part N of the electrostatic adsorption device, there is an air avoidance area 33 on the radial direction 11 of the circular plane where the first branch portion 312 and the second branch portion 322 are located, and the first arc electrode 311, the second arc electrode 321, the first branch portion 312 and the second branch portion 322 close to the air avoidance area 33 are deformed to obtain a space for setting the air avoidance area 33.

[0144] The present invention provides a space for the fixed structure of the electrostatic adsorption device in the process chamber and the extension and retraction of the ejector pin by setting a clearance area 33 on the radial direction 11 of the circular plane where the first branch portion 312 and the second branch portion 322 are located, thereby improving the reliability of the fixed installation of the electrostatic adsorption device in the process chamber. Specifically, when the clearance area 33 passing through the electrostatic adsorption device is required to fix the electrostatic adsorption device or extend and retract the ejector pin, the clearance area 33 is set as needed.

[0145] In one embodiment, Figure 23-Figure 26 As shown, the first electrode area includes a central electrode portion 35, three first branch portions 312 and three groups of first arc portions, each group of first arc portions includes 23 first arc electrodes 311; the second electrode area includes an edge electrode portion 37, three second branch portions 322 and three groups of second arc portions, each group of second arc portions includes 23 second arc electrodes 321; the central electrode portion 35 and the edge electrode portion 37 are both in the shape of a full circular ring.

[0146] In summary, the electrostatic adsorption device of the present invention can realize electrical connection of the entire electrode through one electrode connection point through the distribution of the first electrode area and the second electrode area, which is beneficial to reduce the wiring space required on the back of the electrostatic adsorption device and facilitate the integration and debugging of the electrostatic adsorption device; at the same time, by setting the width and number of the first arc electrode 311 and the second arc electrode 321 along the radial direction 11 of the circular plane, a gradient force with a very strong electric field intensity is generated, thereby greatly improving the adsorption force of the electrostatic adsorption device, so that the adsorption reliability of the substrate 40 to be adsorbed with a higher resistivity can be achieved; in addition, by setting the air avoidance area 33, a moving space is provided for the electrostatic adsorption device during the handover process of transferring the substrate 40 to be adsorbed, avoiding collision, improving the reliability of the electrostatic adsorption device and protecting the substrate 40 to be adsorbed and the handover device; finally, by setting the central electrode portion 35 and the edge electrode portion 37 as a full circular ring, a larger area of ​​electrode distribution can be achieved while maintaining a single electrode connection point, further improving the adsorption capacity.

[0147] Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

[0148] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. An electrostatic adsorption device, characterized in that: The electrostatic adsorption device comprises: an insulating medium layer (20), a first electrode region and a second electrode region, wherein a cross section of the insulating medium layer (20) at a preset height is a circular plane; The first electrode region comprises a central electrode portion (35), m first branch portions (312) and m groups of first arc portions, each group of the first arc portions comprises n first arc electrodes (311); the central electrode portion (35) is a first arc shape coinciding with the center of the circular plane, the first branch portions (312) extend along the radial direction (11) of the circular plane, and the m first branch portions (312) are all connected to the outer periphery of the central electrode portion (35); each group of the first arc portions and the first branch portions (312) are connected in pairs, and the n first arc electrodes (311) in the same group of the first arc portions are arcs corresponding to n concentric circles with different radii and larger than the first arc shape at the same central angle; The second electrode region comprises an edge electrode portion (37), m second branch portions (322) and m groups of second arc portions, each group of the second arc portions comprises n second arc electrodes (321); the edge electrode portion (37) is a second arc shape coinciding with the center of the circular plane, the second branch portions (322) extend along the radial direction (11) of the circular plane, and the m second branch portions (322) are all connected to the inner circumference of the edge electrode portion (37); each group of the second arc portions is connected to the second branch portions (322) in pairs, and the n second arc electrodes (321) in the same group of the second arc portions are arcs corresponding to n concentric circles with different radii and smaller than the second arc shape at the same central angle; m is an integer greater than or equal to 2, and n is an integer greater than 2; the first electrode region and the second electrode region have opposite electrical polarities; the first arc electrodes (311) and the second arc electrodes (321) adjacent to each other along the radial direction (11) of the circular plane are arranged in an interdigitated manner, and the insulating dielectric layer (20) covers the exposed surfaces of the first arc electrodes (311) and the second arc electrodes (321) and fills the gap between their surfaces; the radius of the central electrode portion (35) is smaller than the radius of any of the second arc electrodes (321), and the radius of the edge electrode portion (37) is larger than the radius of any of the first arc electrodes (311); The length of each of the first arc electrodes (311) along the radial direction (11) of the circular plane is greater than or equal to 0.3 millimeters and less than or equal to 5 millimeters, and the length of each of the second arc electrodes (321) along the radial direction (11) of the circular plane is greater than or equal to 0.3 millimeters and less than or equal to 5 millimeters.

2. The electrostatic adsorption device according to claim 1, characterized in that: Each group of the first arc portions is distributed on the same side of the first branch portion (312) to which it is connected along the first circumferential direction (13) of the circular plane; each group of the second arc portions is distributed on the same side of the second branch portion (322) to which it is connected along the second circumferential direction (14) of the circular plane; one of the first circumferential direction (13) and the second circumferential direction (14) is a clockwise direction, and the other is a counterclockwise direction.

3. The electrostatic adsorption device according to claim 1, characterized in that: Each group of the first arc portions is distributed on one side of the first branch portion (312) connected to it along the first circumferential direction (13) of the circular plane and on one side of the second circumferential direction (14) of the circular plane; each group of the second arc portions is distributed on one side of the second branch portion (322) connected to it along the first circumferential direction (13) of the circular plane and on one side of the second circumferential direction (14) of the circular plane; one of the first circumferential direction (13) and the second circumferential direction (14) is a clockwise direction, and the other is a counterclockwise direction.

4. The electrostatic adsorption device according to any one of claims 1 to 3, characterized in that: There is an avoidance area (33) on the radial direction (11) of the circular plane where the first branch portion (312) and the second branch portion (322) are located, and the first arc electrode (311), the second arc electrode (321), the first branch portion (312) and the second branch portion (322) close to the avoidance area (33) are arranged to avoid deformation to obtain a space for setting the avoidance area (33).

5. The electrostatic adsorption device according to any one of claims 1 to 3, characterized in that: The interior of the central electrode portion (35) is a hollow hole (34).

6. The electrostatic adsorption device according to any one of claims 1 to 3, characterized in that: The central electrode portion (35) is a major arc with an opening; or the central electrode portion (35) is a full circular ring; The edge electrode portion (37) is a major arc with an opening; or the edge electrode portion (37) is a full circular ring.

7. The electrostatic adsorption device according to any one of claims 1 to 3, characterized in that: The area ratio of the first electrode region to the second electrode region is greater than 0 and less than or equal to 10, or the area ratio of the second electrode region to the first electrode region is greater than 0 and less than or equal to 10.

8. The electrostatic adsorption device according to any one of claims 1 to 3, characterized in that: An area ratio of the first electrode region to the second electrode region is equal to 1.

9. The electrostatic adsorption device according to any one of claims 1 to 3, characterized in that: The length of each first circular arc electrode (311) along the radial direction (11) of the circular plane is greater than or equal to 0.3 millimeters and less than 0.5 millimeters, and the length of each second circular arc electrode (321) along the radial direction (11) of the circular plane is greater than or equal to 0.3 millimeters and less than 0.5 millimeters.

10. The electrostatic adsorption device according to any one of claims 1 to 3, characterized in that: The radial (11) length of each of the first circular arc electrodes (311) along the circular plane is equal to the radial (11) length of each of the second circular arc electrodes (321) along the circular plane.

11. The electrostatic adsorption device according to any one of claims 1 to 3, characterized in that: The spacing distances between the first arc electrodes (311) and the second arc electrodes (321) adjacent to each other along the radial direction (11) of the circular plane are equal.

12. The electrostatic adsorption device according to any one of claims 1 to 3, characterized in that: The spacing distance between each of the first arc electrodes (311) and the second arc electrodes (321) adjacent to each other along the radial direction (11) of the circular plane is greater than or equal to 0.5 millimeters and less than or equal to 10 millimeters.

13. The electrostatic adsorption device according to any one of claims 1 to 3, characterized in that: The electrostatic adsorption device further comprises a protective layer, the protective layer covering the insulating medium layer (20), the protective layer being used to contact with a substrate (40) to be adsorbed by the electrostatic adsorption device, and the volume resistivity of the protective layer being greater than or equal to 10 14 Ω·cm.

14. The electrostatic adsorption device according to any one of claims 1 to 3, characterized in that: The volume resistivity of the insulating medium layer (20) is greater than or equal to 10 14 Ω·cm.

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