Side multifunctional wafer-level embedded chip photosensitive packaging structure

Abstract

The present invention discloses a side multifunctional wafer-level embedded chip photosensitive packaging structure, including a wafer-level package, a silicon interposer, a transmitting laser, a sensing receiver and an extended wafer-level package; the bottom surface of the silicon interposer is packaged on the wafer-level package to form a main body of the photosensitive packaging structure; the transmitting laser and the sensing receiver are respectively embedded in the top of the silicon interposer, and a transmitting silicon through-hole and a receiving silicon through-hole are formed in the silicon interposer, so that the transmitting laser is electrically connected to the wafer-level package through the transmitting silicon through-hole, and the sensing receiver is electrically connected to the wafer-level package through the receiving silicon through-hole; the extended wafer-level package is packaged on the side end surface of the main body of the photosensitive packaging structure, and an extended silicon through-hole is formed in the silicon interposer, so that the extended wafer-level package is electrically connected to the wafer-level package through the extended silicon through-hole. The present invention relates to the field of electronic packaging technology, and can solve the technical problems existing in the prior art.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic packaging, and in particular to a side multifunctional wafer-level embedded chip type photosensitive packaging structure. Background Art

[0002] Please see attached Figure 1 The conventional optical sensor packaging structure includes: a substrate 8, a housing 9, a glass cover 10, a light-emitting chip 11 and a light-receiving chip 12; the housing 9 is fixed on the substrate 8 by gluing, and two independent chambers are formed in the housing 9 by a partition wall 13 for installing the light-emitting chip 11 and the light-receiving chip 12 respectively, and the light-emitting chip 11 and the light-receiving chip 12 are electrically connected to the substrate 8 by a gold wire 14; the top of the housing 9 is located above the light-emitting chip 11 and the light-receiving chip 12, and a light-transmitting port is reserved, and the glass cover 10 covers the top of the housing. The glass cover 10 meets the emission and focusing requirements of light through the top spherical protrusion 15.

[0003] The traditional optical sensor packaging structure has the following shortcomings:

[0004] 1. The housing 9, the glass cover 10 and the substrate 8 are connected by gluing, which has a high manufacturing cost and is prone to light leakage at the gluing position, thus affecting the use effect of the optical sensor packaging structure.

[0005] 2. Since the shell 9 and the glass cover 10 are made of different materials, the relative change in material length per unit temperature change (CTE for short) is different, resulting in poor heat dissipation. Under high temperature conditions, warping to varying degrees may occur, and the cover may even fall off, which affects the service life of the optical sensor packaging structure.

[0006] 3. The light transmittance of the glass cover 10 and its spherical protrusion 15 is less than 90%, which affects the use effect of the optical sensor packaging structure.

[0007] 4. The glass cover 10 and the housing 9 often have burrs of 30-100 um during production.

[0008] 5. The thickness and volume of the entire optical sensor packaging structure are relatively large, and the light emitting and receiving functions can only be realized through the light emitting chip 11 and the light receiving chip 12. The functionality is relatively simple and the scalability is poor.

[0009] Therefore, it is necessary to provide a side multifunctional wafer-level embedded chip photosensitive packaging structure that can solve the above technical problems. Summary of the invention

[0010] The purpose of the present invention is to provide a side multifunctional wafer-level embedded chip photosensitive packaging structure that can solve the above-mentioned technical problems.

[0011] The present invention is achieved in that:

[0012] A side multifunctional wafer-level embedded chip photosensitive packaging structure comprises a wafer-level package, a silicon interposer, a transmitting laser, a sensing receiver and an extended wafer-level package; the bottom surface of the silicon interposer is packaged on the wafer-level package to form a main body of the photosensitive packaging structure; the transmitting laser and the sensing receiver are respectively embedded in the top of the silicon interposer, and a transmitting silicon through-hole and a receiving silicon through-hole are formed in the silicon interposer, so that the transmitting laser is electrically connected to the wafer-level package through the transmitting silicon through-hole, and the sensing receiver is electrically connected to the wafer-level package through the receiving silicon through-hole; the extended wafer-level package is packaged on the side end surface of the main body of the photosensitive packaging structure, and an extended silicon through-hole is formed in the silicon interposer, so that the extended wafer-level package is electrically connected to the wafer-level package through the extended silicon through-hole.

[0013] The silicon intermediary layer is made of a light-proof material, and the transmitting laser and the sensing receiver are arranged at intervals, so that the material of the silicon intermediary layer forms a light-proof interlayer between the transmitting laser and the sensing receiver.

[0014] The top surface of the transmitting laser and the top surface of the sensing receiver are flush with the top surface of the silicon interposer.

[0015] The emitting laser is a vertical cavity surface emitting laser.

[0016] The material of the silicon intermediate layer, the material of the transmitting laser and the material of the inductive receiver are the same.

[0017] The extended wafer-level packaging includes 3D scattered wafer-level packaging and multi-chip scattered wafer-level packaging. The 3D scattered wafer-level packaging and multi-chip scattered wafer-level packaging are respectively packaged on the two side end surfaces of the photosensitive packaging structure body, and are electrically connected to the wafer-level packaging through extended silicon vias.

[0018] Compared with the prior art, the present invention has the following beneficial effects:

[0019] 1. The present invention is provided with a silicon interposer, and the transmitting laser and the sensing receiver are embedded in the silicon interposer, and there is no need to set up a shell and a glass cover, which can reduce costs and avoid the light leakage problem at the bonding part of the shell and the glass cover, thereby ensuring the use effect of the photosensitive packaging structure and greatly improving the burr quality problem of the photosensitive packaging structure; at the same time, the silicon interposer is made of the same material as the transmitting laser and the sensing receiver, which can improve the warping problem and cover falling problem of varying degrees under high temperature conditions caused by different CTE of the materials, and has a good heat dissipation effect.

[0020] 2. The transmitting laser and the sensing receiver of the present invention are buried in a silicon interposer. The top surfaces of the silicon interposer, the vertical cavity surface emitting laser and the sensing receiver are flush, which can greatly improve the light transmittance, thereby further ensuring the use effect of the photosensitive packaging structure. At the same time, the material of the silicon interposer forms a natural light barrier between the transmitting laser and the sensing receiver, which can avoid mutual interference between the transmitting laser and the sensing receiver and ensure the operating stability of the photosensitive packaging structure.

[0021] 3. The present invention has a wafer-level package to replace the traditional substrate, and no substrate is required, which can greatly reduce the thickness and volume of the entire photosensitive packaging structure and reduce costs.

[0022] 4. Since the present invention is provided with an extended wafer-level package, the extended wafer-level package is packaged on the side of the main body of the photosensitive packaging structure, which can be used to expand various functionalities for the photosensitive packaging structure and has a wider range of application scenarios. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 is a cross-sectional view of a light sensing packaging structure of the prior art;

[0024] Figure 2 It is a cross-sectional view of the side multifunctional wafer-level embedded chip photosensitive packaging structure of the present invention.

[0025] In the figure, 1 wafer-level packaging, 2 silicon interposer, 201 transmitting silicon via, 202 receiving silicon via, 203 extended silicon via, 3 transmitting laser, 4 sensing receiver, 5 extended wafer-level packaging, 8 substrate, 9 housing, 10 glass cover, 11 light-emitting chip, 12 light-receiving chip, 13 partition wall, 14 gold wire, 15 spherical protrusion. DETAILED DESCRIPTION

[0026] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0027] Please see attached Figure 2 A side multifunctional wafer-level embedded chip photosensitive packaging structure includes a wafer-level package 1, a silicon interposer 2, a transmitting laser 3, a sensing receiver 4 and an extended wafer-level package 5; the bottom surface of the silicon interposer 2 is packaged on the wafer-level package 1 to form a main body of the photosensitive packaging structure; the transmitting laser 3 and the sensing receiver 4 are respectively embedded in the top of the silicon interposer 2, and a transmitting silicon via 201 and a receiving silicon via 202 are formed in the silicon interposer 2, so that the transmitting laser 3 is electrically connected to the wafer-level package 1 through the transmitting silicon via 201, and the sensing receiver 4 is electrically connected to the wafer-level package 1 through the receiving silicon via 202; the extended wafer-level package 5 is packaged on the side end surface of the main body of the photosensitive packaging structure, and an extended silicon via 203 is formed in the silicon interposer 2, so that the extended wafer-level package 5 is electrically connected to the wafer-level package 1 through the extended silicon via 203.

[0028] The photosensitive packaging structure of the present invention embeds the transmitting laser 3 and the sensing receiver 4 in the silicon interposer 2, and does not need to use the shell and glass cover of the prior art, thereby reducing costs; and the silicon interposer 2 is directly packaged on the wafer-level package 1, which can avoid the problem of light leakage in the adhesive part between the shell, glass cover and substrate in the prior art, and ensure the laser emission of the transmitting laser 3 and the reflected light receiving function of the sensing receiver 4, thereby ensuring the use effect of the photosensitive packaging structure. At the same time, because the silicon interposer 2 is an integral block structure, it is easier to manufacture and shape, and does not require much cutting, which can greatly improve the burr problem caused by cutting processing of the shell and glass cover in the prior art, and improve the quality of the photosensitive packaging structure.

[0029] The photosensitive packaging structure of the present invention replaces the substrate of the prior art with a wafer-level package 1. The thickness of the conventional substrate is about 200um, while the thickness of the wafer-level package 1 is only about 10um, which can greatly reduce the thickness and volume of the entire photosensitive packaging structure while ensuring the electrical connection requirements. At the same time, by extending the packaging of the wafer-level package 5 at the side end of the main body of the photosensitive packaging structure, the extended wafer-level package 5 can provide extended functions, and the corresponding type of wafer-level package can be adaptively selected as the extended wafer-level package 5 according to the actual functional requirements, thereby increasing the functionality of the entire photosensitive packaging structure.

[0030] The silicon interposer 2 is made of a light-proof material, and the transmitting laser 3 and the sensing receiver 4 are arranged at intervals, so that the material of the silicon interposer 2 forms a light-proof spacer between the transmitting laser 3 and the sensing receiver 4 .

[0031] The silicon interposer 2 is light-proof, which can prevent mutual interference between the transmitting laser 3 and the sensing receiver 4, forming a natural light barrier. There is no need to set a partition wall between the transmitting laser 3 and the sensing receiver 4, thereby further reducing costs. The silicon interposer 2 has good heat dissipation performance, ensuring the safe operation of the photosensitive packaging structure.

[0032] The top surface of the transmitting laser 3 and the top surface of the sensing receiver 4 are flush with the top surface of the silicon interposer 2 .

[0033] The transmitting laser 3 and the sensing receiver 4 are buried in the top surface of the silicon interposer 2, ensuring that the silicon interposer 2 will not affect the laser emission of the transmitting laser 3 and the reflected light receiving function of the sensing receiver 4, and will not be affected by the glass cover and its spherical protrusion 15 of the prior art. The light transmittance can reach 100%, and it is easier to manufacture.

[0034] The emitting laser 3 is a vertical cavity surface emitting laser.

[0035] The vertical cavity surface emitting laser can emit a laser beam perpendicular to the surface of the emitting laser 3, thereby improving the laser emission effect of the emitting laser 3 and facilitating the sensing receiver 4 to better receive the reflected light beam. The corresponding emitting laser type can also be selected according to actual functional requirements.

[0036] The extended wafer-level package 5 includes a 3D diffused wafer-level package and a multi-chip diffused wafer-level package. The 3D diffused wafer-level package and the multi-chip diffused wafer-level package are respectively packaged on the two side end surfaces of the photosensitive packaging structure body, and are respectively electrically connected to the wafer-level package 1 through the extended silicon vias 203.

[0037] The wafer-level packaging type and quantity of the extended wafer-level packaging 5 can be adaptively adjusted according to actual usage requirements to meet the extended functional requirements of the photosensitive packaging structure.

[0038] The material of the silicon interposer 2 , the material of the transmitting laser 3 and the material of the inductive receiver 4 are the same.

[0039] The silicon interposer 2, the transmitting laser 3 and the sensing receiver 4 are made of the same material and have the same CTE, thereby avoiding different degrees of warping and cover falling problems under high temperature conditions due to different CTEs, thereby extending the service life of the photosensitive packaging structure.

[0040] The silicon interposer is an interposer commonly used in distributed systems, and can be used for information exchange between upper and lower nodes, that is, to achieve telecommunication connection and information exchange between the transmitting laser 3 and the sensing receiver 4 and the wafer-level package 1. The silicon interposer 2, the extended wafer-level package 5 and the wafer-level package 1 are packaged together and electrically connected using conventional packaging processes, which will not be repeated here.

[0041] The above are only preferred embodiments of the present invention and are not intended to limit the scope of protection of the invention. Therefore, any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A side multifunctional wafer-level embedded chip photosensitive packaging structure, characterized by: The invention comprises a wafer-level package (1), a silicon interposer (2), a transmitting laser (3), a sensing receiver (4) and an extended wafer-level package (5); the bottom surface of the silicon interposer (2) is packaged on the wafer-level package (1) to form a main body of a light-sensing package structure; the transmitting laser (3) and the sensing receiver (4) are respectively embedded in the top of the silicon interposer (2); a transmitting silicon through-hole (201) and a receiving silicon through-hole (202) are formed in the silicon interposer (2), so that the transmitting laser (3) is electrically connected to the wafer-level package (1) through the transmitting silicon through-hole (201); and the sensing receiver (4) is electrically connected to the wafer-level package (1) through the receiving silicon through-hole (202); the extended wafer-level package (5) is packaged on the side end surface of the main body of the light-sensing package structure; an extended silicon through-hole (203) is formed in the silicon interposer (2), so that the extended wafer-level package (5) is electrically connected to the wafer-level package (1) through the extended silicon through-hole (203); The silicon intermediary layer (2) is made of a light-proof material, and the emitting laser (3) and the sensing receiver (4) are arranged at intervals, so that the material of the silicon intermediary layer (2) forms a light-proof interlayer between the emitting laser (3) and the sensing receiver (4).

2. The side multifunctional wafer-level embedded chip photosensitive packaging structure according to claim 1 is characterized in that: The top surface of the transmitting laser (3) and the top surface of the sensing receiver (4) are flush with the top surface of the silicon intermediate layer (2).

3. The side multifunctional wafer-level embedded chip light sensing packaging structure according to claim 2 is characterized in that: The emitting laser (3) is a vertical cavity surface emitting laser.

4. The side multifunctional wafer-level embedded chip light sensing packaging structure according to claim 2 is characterized in that: The material of the silicon intermediate layer (2), the material of the transmitting laser (3) and the material of the inductive receiver (4) are the same.

5. The side multifunctional wafer-level embedded chip photosensitive packaging structure according to claim 1 is characterized in that: The extended wafer-level package (5) comprises a 3D scattered wafer-level package and a multi-chip scattered wafer-level package. The 3D scattered wafer-level package and the multi-chip scattered wafer-level package are respectively packaged on the two side end surfaces of the main body of the photosensitive packaging structure, and are respectively electrically connected to the wafer-level package (1) through the extended silicon vias (203).

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