Via method for glass substrate, mini-led substrate and device

Abstract

The application relates to a glass substrate via hole method, a Mini-LED substrate and a device. The glass substrate via hole method comprises the following steps: providing a glass substrate, the glass substrate having opposite A and B surfaces; performing laser treatment on the A surface to form pre-penetration array dots, and performing film coating treatment on the B surface to form a protective film; and performing via hole treatment on the glass substrate by using a first etching solution containing HF and H2SO4 to form a via hole extending from the pre-penetration array dots on the A surface to the B surface. The via hole method provided by the application can form a large number of via holes with regular hole shapes, uniform hole diameters and high via hole rates on the glass substrate.

Description

Technical Field

[0001] This application relates to the technical field of semiconductor devices, and in particular to a through-hole method for a glass substrate, a Mini-LED substrate, and a device. Background Technology

[0002] Light-emitting diodes (LEDs), as a new type of light-emitting device, have the characteristics of good color rendering, fast response speed, and energy saving and environmental protection. Among them, Mini-LED devices are LED devices with chip sizes between 50μm and 200μm, which have the advantages of high color saturation, high brightness, local dimming capability, and low energy consumption, and are widely used in electronic devices such as backlit displays, laptops, tablets, and televisions.

[0003] Mini-LED substrates mainly fall into two categories: printed circuit board (PCB) substrates and glass substrates. Compared to PCB substrates, glass substrates offer better heat dissipation and higher flatness. To achieve circuit conductivity between the two opposing surfaces of the glass substrate, multiple through-holes need to be formed on the substrate, and the through-holes are filled with conductive materials such as silver paste. Currently, the through-hole method for glass substrates typically employs a combination of laser drilling and chemical etching. However, this method results in through-holes with uneven diameter, irregular shape, and low throughput, which are detrimental to filling with conductive materials and achieving effective circuit conductivity. Summary of the Invention

[0004] Therefore, it is necessary to provide a through-hole method for glass substrates, a Mini-LED substrate, and a device to solve the problems of uneven hole size, irregular hole shape, and low through-hole rate in traditional through-hole methods.

[0005] The above-mentioned objective of this application is achieved through the following technical solution:

[0006] In a first aspect, this application provides a method for creating a through-hole in a glass substrate, comprising the following steps:

[0007] A glass substrate is provided, the glass substrate having opposing A surfaces and B surfaces;

[0008] The surface A is laser-treated to form pre-penetrating dots, and the surface B is coated to form a protective film.

[0009] The glass substrate is subjected to through-hole treatment using a first etching solution containing HF and H2SO4 to form through-holes extending from the pre-penetrating lattice points on surface A to surface B.

[0010] In one embodiment, the diameter of the through hole decreases along the direction from the A surface to the B surface.

[0011] In one embodiment, the ratio of the aperture of the through hole on surface A to the aperture of the through hole on surface B is (1.5~3):1.

[0012] In one embodiment, the first etching solution comprises the following raw materials in parts by weight:

[0013] ;

[0014] The HF solution contains 20% to 60% HF by mass.

[0015] The mass fraction of H2SO4 in the H2SO4 solution is 60%~98%.

[0016] In one embodiment, the method of processing the glass substrate through holes using a first etchant containing HF and H2SO4 includes one or more of horizontal etching, immersion etching, and atomization etching.

[0017] In one embodiment, the atomization etching method includes the following steps: atomizing the first etching solution to form a spray, and using the spray to perform atomization etching on the glass substrate.

[0018] In one embodiment, the method for coating the B surface includes magnetron sputtering.

[0019] In one embodiment, the protective film is made of one or more of molybdenum, lead, nickel, chromium, and copper.

[0020] In one embodiment, the thickness of the protective film is 400nm~600nm.

[0021] In one embodiment, the adhesion between the protective film and the glass substrate reaches 5B or higher.

[0022] In one embodiment, after the glass substrate is perforated, the step further includes: using a second etching solution to perform a film removal etching process on the glass substrate to remove the protective film.

[0023] In one embodiment, the components of the second etching solution include an inorganic strong acid, or the components of the second etching solution include an inorganic strong acid and an oxidant.

[0024] The inorganic strong acid includes one or more of HNO3, H2SO4 and HCl;

[0025] The oxidant includes H2O2.

[0026] In one embodiment, before laser processing the surface A, the method further includes the following step: thinning the glass substrate to a thickness of 0.115 mm to 0.125 mm.

[0027] In one embodiment, after the glass substrate is perforated, the thickness of the glass substrate is ≤0.1mm.

[0028] In a second aspect, this application provides a Mini-LED substrate, the Mini-LED substrate comprising a glass substrate having a plurality of through holes, the through holes being formed using the through hole method for glass substrates as described above.

[0029] In a third aspect, this application provides a Mini-LED device, the Mini-LED device comprising the Mini-LED substrate described above.

[0030] This application has at least the following beneficial effects:

[0031] This application utilizes laser processing to form pre-penetrating dots on surface A of a glass substrate, and a coating process to form a protective film on surface B of the glass substrate. Compared to the process of bonding acid-resistant tape, the protective film prepared by the coating method has stronger adhesion to surface B, higher reliability, and effectively prevents lateral etching, thereby reducing problems such as irregular hole morphology and uneven hole diameter. Thanks to the protection of surface B by the protective film, during the via etching process, the first etching solution can only perform unidirectional internal etching starting from the pre-penetrating dots on surface A, thus forming vias extending from the pre-penetrating dots on surface A to surface B. The first etching solution contains HF and H2SO4. Utilizing the synergistic effect between the two, the etching rate can be effectively controlled, and the vias can be etched slowly and stably. The etching products are also promptly removed to prevent the risk of accumulation inside the holes, reducing defects such as irregular hole morphology, uneven hole diameter, and non-conductive holes. This results in a large number of vias with regular hole morphology, uniform hole diameter, and high through-hole rate on the glass substrate. Attached Figure Description

[0032] To more clearly illustrate the technical solutions in the embodiments of this application and to more completely understand this application and its beneficial effects, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0033] Figure 1 A schematic diagram of the cross-sectional morphology of a through hole produced by conventional techniques;

[0034] Figure 2 A schematic diagram of the surface morphology of a through-hole produced by conventional techniques;

[0035] Figure 3 This is a schematic flowchart of a method for creating through-holes in a glass substrate according to one embodiment;

[0036] Figure 4 This is a schematic diagram of the surface morphology of the through-holes obtained by bonding acid-resistant tape in a traditional technique.

[0037] Figure 5 This is a schematic diagram of the cross-sectional morphology of a through hole formed in one embodiment;

[0038] Figure 6 This is a schematic diagram of the surface morphology of a through hole formed in one embodiment. Detailed Implementation

[0039] To facilitate understanding of this application, the following detailed description is provided in conjunction with specific embodiments. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0040] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0041] In this application, "and / or" means any and all combinations of one or more of the related listed items. "At least one" means one or more, such as one, two, or more. "Multiple" or "several" means at least two, such as two, three, etc., and "multi-layered" means at least two layers, such as two, three, etc., unless otherwise expressly and specifically defined. In the description of this application, "several" means at least one, such as one, two, etc., unless otherwise expressly and specifically defined.

[0042] When a numerical range is disclosed in this application, the range is considered continuous and includes the minimum and maximum values ​​of the range, as well as every value between the minimum and maximum values. Furthermore, when the range refers to an integer, it includes every integer between the minimum and maximum values ​​of the range. Additionally, when multiple ranges are provided to describe a feature or characteristic, the ranges may be merged. In other words, unless otherwise specified, all ranges disclosed in this application should be understood to include any and all subranges to which they are included.

[0043] Unless otherwise specified, all steps in this application may be performed sequentially or randomly. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or it may include steps (b) and (a) performed sequentially. For example, the method may also include step (c), indicating that step (c) may be added to the method in any order. For example, the method may include steps (a), (b), and (c), or it may include steps (a), (c), and (b), or it may include steps (c), (a), and (b), etc.

[0044] In this application, "above" or "below" includes the number itself. For example, "below 1" includes 1.

[0045] Unless otherwise specified, the temperature parameters in this application are permitted to be either constant-temperature treatment or variations within a certain temperature range. It should be understood that the constant-temperature treatment allows temperature fluctuations within the precision range of the instrument control, such as ±5℃, ±4℃, ±3℃, ±2℃, or ±1℃.

[0046] In this application, room temperature refers to indoor temperature, normal temperature, or general temperature. Generally, room temperature can be any of the following temperature ranges: 23℃±2℃, 25℃±5℃, or 20℃±5℃.

[0047] Traditionally, through-hole methods on glass substrates employ a combination of laser drilling and chemical etching. Laser drilling uses a laser to create laser spots (or laser-damaged areas) on at least one surface of the glass substrate, forming discontinuous penetration points composed of multiple laser spots. These discontinuous penetration points contain unremoved glass burrs and surface glass debris, requiring chemical etching to ensure complete penetration, achieve the desired hole size, and smooth the inner walls to enhance the through-hole strength, thereby forming multiple complete and rounded through-holes.

[0048] Please see Figure 1 and Figure 2 ,in, Figure 1 This is a schematic diagram of the cross-sectional morphology of a through hole produced using traditional techniques. Figure 2 This is a schematic diagram of the surface morphology of a through-hole produced using conventional techniques. (Example:) Figure 1 As shown, through-holes produced by traditional techniques cannot achieve an ideal cylindrical shape, but rather exhibit an hourglass shape (as indicated by the white dotted line), meaning the diameters of the two surfaces of the through-hole are similar, with the smallest diameter located in the middle of the two surfaces. Figure 2 As shown, in addition to hourglass-shaped through holes, some through holes also exhibit irregular hole shapes with significant differences in hole shape and uneven hole diameter. Furthermore, some holes are not fully conductive, resulting in a low through hole rate, which is not conducive to filling conductive materials and forming a conductive circuit.

[0049] Based on this, in a first aspect, this application provides a method for forming through holes in a glass substrate, so as to form through holes with regular hole morphology, uniform hole diameter and high through hole ratio on the glass substrate.

[0050] Please see Figure 3 This is a flowchart illustrating a method for creating through-holes in a glass substrate according to one embodiment.

[0051] Understandably, although Figure 3 The steps in the flowchart are shown sequentially as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order in which these steps are executed, and they can be performed in other orders. Figure 3 At least some of the steps in the process may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but may be executed at different times. The execution order of these steps or stages is not necessarily sequential, but may be executed in turn or alternately with other steps or at least some of the steps or stages in other steps.

[0052] like Figure 3 As shown, the through-hole method for a glass substrate includes the following steps:

[0053] S100: Provides a glass substrate having opposing A and B surfaces;

[0054] S200: Laser treatment is applied to surface A to form pre-penetrating dots, and a coating treatment is applied to surface B to form a protective film;

[0055] S300: A first etchant containing HF and H2SO4 is used to perform through-hole processing on a glass substrate to form through-holes extending from pre-penetrating lattice points on surface A to surface B.

[0056] This application utilizes laser processing to form pre-penetrating dots on surface A of a glass substrate, and a coating process to form a protective film on surface B of the glass substrate. Compared to the process of bonding acid-resistant tape, the protective film prepared by the coating method has stronger adhesion to surface B, higher reliability, and effectively prevents lateral etching, thereby reducing problems such as irregular hole morphology and uneven hole diameter. Thanks to the protection of surface B by the protective film, during the via etching process, the first etching solution can only perform unidirectional internal etching starting from the pre-penetrating dots on surface A, thus forming vias extending from the pre-penetrating dots on surface A to surface B. The first etching solution contains HF and H2SO4. Utilizing the synergistic effect between the two, the etching rate can be effectively controlled, and the vias can be etched slowly and stably. The etching products are also promptly removed to prevent the risk of accumulation inside the holes, reducing defects such as irregular hole morphology, uneven hole diameter, and non-conductive holes. This results in a large number of vias with regular hole morphology, uniform hole diameter, and high through-hole rate on the glass substrate.

[0057] Furthermore, the through-hole method for glass substrates provided in this application only requires single-sided drilling of the glass substrate using laser processing, eliminating the need for double-sided drilling. This reduces the stringent and complex alignment operations required for double-sided drilling, resulting in high drilling efficiency and making it more suitable for forming a large number of through-holes.

[0058] The through-hole method for glass substrates will be described in detail below using a step-by-step approach.

[0059] S100: Provides a glass substrate having opposing A and B surfaces.

[0060] Optionally, the material of the glass substrate includes one or more of soda-lime glass, lead-barium glass, aluminosilicate glass, borosilicate glass, quartz glass, and microcrystalline glass, and may further be soda-lime glass.

[0061] Optionally, the initial thickness of the glass substrate is >0.125 mm. As an example, the initial thickness of the glass substrate can be 0.2 mm, 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm, 1 mm, 1.1 mm, 1.2 mm, or 1.5 mm. In some specific examples, the initial thickness of the glass substrate is 0.55 mm or 0.70 mm.

[0062] Optionally, before laser processing surface A, the following step is further included: thinning the glass substrate to a thickness of 0.115 mm to 0.125 mm. As an example, the thickness of the glass substrate after the thinning process can be 0.115 mm, 0.116 mm, 0.117 mm, 0.118 mm, 0.119 mm, 0.120 mm, 0.121 mm, 0.122 mm, 0.123 mm, 0.124 mm, or 0.125 mm.

[0063] Due to limitations such as the thickness and price of the raw materials for glass substrates, glass substrates with a relatively large initial thickness are usually thinned to make them thinner and easier to pass through, thereby improving the efficiency of subsequent drilling.

[0064] Optionally, the thinning process may include immersion and / or spraying, and the etching solution used in the immersion and spraying processes is a hydrofluoric acid (HF) solution or an acidic solution containing HF.

[0065] Optionally, after the thinning process, the following step is also included: performing a first cleaning treatment on the glass substrate to improve the cleanliness of the glass substrate and avoid interference from dirt on the etched vias. Specifically, the first cleaning treatment can be direct cleaning or ultrasonic cleaning, and the cleaning solution can be a solvent such as water, ethanol, or acetone.

[0066] S200: Laser treatment is applied to surface A to form pre-penetrating dots, and a coating treatment is applied to surface B to form a protective film.

[0067] Understandably, there are no particular restrictions on the order of laser treatment on surface A and coating treatment on surface B. Surface A can be laser treated first and then coating treatment on surface B, or surface B can be coated first and then laser treatment on surface A.

[0068] Optionally, surface A is laser-treated, including the following steps: placing the thinned glass substrate on a worktable with surface A away from the worktable; and using a laser device to laser-form multiple pre-penetrating dots on surface A.

[0069] Understandably, the shape, size, and number of pre-penetration dots are not particularly limited. As an example, the shape of the pre-penetration dots can be circular, triangular, square, rectangular, or polygonal, and can further be circular. When the shape of the pre-penetration dots is circular, the size of the pre-penetration dots refers to the diameter of the circle, which can be 10μm, 20μm, 30μm, 40μm, 50μm, 60μm, 70μm, 80μm, 90μm, or 100μm. The specific size can be selected according to the requirements of the target via. There is no particular limitation on the number of pre-penetration dots; laser processing can be performed according to the product design drawings.

[0070] Optionally, after laser processing, the process further includes the following step: performing a second cleaning treatment on the glass substrate to improve the etching efficiency of the first etching solution for the vias. Simultaneously, the second cleaning treatment also removes surface oil contaminants, reducing the risk of uneven etching and improving the via performance. Specifically, the second cleaning treatment can be direct cleaning or ultrasonic cleaning, using solvents such as water, ethanol, or acetone.

[0071] Optionally, the method for coating surface B includes magnetron sputtering. Specifically, a metal target is used to deposit a protective film on the surface B of the glass substrate using magnetron sputtering.

[0072] Optionally, the metal target material includes one or more of molybdenum, lead, nickel, chromium, and copper, and may further be selected from elemental molybdenum, elemental lead, nickel-copper alloy, and nickel-chromium-molybdenum alloy. The nickel-copper alloy can be Monel 400, or a nickel-copper alloy with a nickel content of 67 wt.% and a copper content of 33 wt.%. The nickel-chromium-molybdenum alloy can be Hastelloy C276, which is a nickel-molybdenum-chromium-iron-tungsten nickel-based alloy and a highly corrosion-resistant metallic material.

[0073] Understandably, the aforementioned metal target material has strong corrosion resistance and acid resistance, and the protective film deposited does not react with HF or H2SO4 in the first etching solution, thus effectively protecting the B surface of the glass substrate and preventing lateral etching, reducing the formation of crescent-shaped corrosion marks on the glass substrate surface (such as...). Figure 4 (The shaded area on the right side indicated by the middle arrow), thereby improving the regularity of the shape and the uniformity of the aperture.

[0074] Optionally, the protective film is made of the same material as the metal target, including one or more of molybdenum, lead, nickel, chromium, and copper, and further optionally one of elemental molybdenum, elemental lead, nickel-copper alloy, and nickel-chromium-molybdenum alloy. The nickel-copper alloy can be Monel 400, and the nickel-chromium-molybdenum alloy can be Hastelloy C276.

[0075] Optionally, the thickness of the protective film is 400nm to 600nm. As an example, the thickness of the protective film can be 400nm, 420nm, 440nm, 460nm, 480nm, 500nm, 520nm, 540nm, 560nm, 580nm or 600nm.

[0076] Optionally, the adhesion between the protective film and the glass substrate reaches 5B or higher.

[0077] Understandably, the adhesion between the protective film and the glass substrate can be tested using the cross-cut adhesion test. Adhesion grades, from lowest to highest, are 0B, 1B, 2B, 3B, 4B, and 5B, where 5B indicates that the film layer cannot peel off at all. Alternatively, adhesion testing can also be conducted according to the standards "Cross-cut Adhesion Test for Paint Films" (GB / T 1720-2020), "Cross-cut Adhesion Test for Paint and Varnish Films" (GB / T 9286-2021), or "Pull-off Adhesion Test for Paint and Varnish" (GB / T 5210-2006).

[0078] Traditional methods typically involve bonding acid-resistant tape, such as PE or PET tape, to a portion of the glass substrate surface. The adhesive strength can range from 1g / 25mm to 25g / 25mm. However, the adhesion between the acid-resistant tape and the glass substrate is low, resulting in poor acid and corrosion resistance. HF in the etching solution can diffuse from the inside of the holes outwards and penetrate the adhesive layer, causing lateral etching of 100μm to 300μm, easily forming crescent-shaped corrosion marks (such as...). Figure 4 (The shaded area on the right indicated by the middle arrow) results in irregular hole shapes and uneven hole diameters. Furthermore, the excessively thin glass substrate alters its surface stress after applying the acid-resistant tape, making it prone to bending, deformation, and breakage during the thinning process. Furthermore, peeling off the acid-resistant tape also damages the glass substrate. In contrast, this application uses a coating process to deposit a protective film with an adhesion strength exceeding 5B to the glass substrate. This strong adhesion and high reliability effectively protect the B surface, preventing crescent-shaped corrosion marks after etching the vias, thus creating a large number of vias with regular hole shapes and uniform diameters.

[0079] Optionally, after the coating process, the method further includes the following step: performing a third cleaning treatment on the glass substrate to improve the etching efficiency of the first etching solution for the vias. Simultaneously, the third cleaning treatment also removes surface contaminants, reducing the risk of uneven etching and improving the via performance. Specifically, the third cleaning treatment can be direct cleaning or ultrasonic cleaning, using solvents such as water, ethanol, or acetone.

[0080] S300: A first etchant containing HF and H2SO4 is used to perform through-hole processing on a glass substrate to form through-holes extending from pre-penetrating lattice points on surface A to surface B.

[0081] Optionally, the first etching solution comprises the following raw materials in parts by weight:

[0082] ;

[0083] The HF mass fraction in the HF solution is 20%~60%;

[0084] The mass fraction of H2SO4 in the H2SO4 solution is 60%~98%.

[0085] In the first etching solution, HF is used to etch the glass substrate, and H2SO4 provides hydrogen ions, causing the ionization reaction of HF to proceed in reverse, reducing the concentration of fluoride ions and thus lowering the etching rate. As the reaction proceeds, fluoride ions are continuously consumed, promoting the forward ionization reaction of HF to ensure that the etching rate is not too low, thus etching the vias slowly and steadily. This allows etching products (such as insoluble substances like sodium fluorosilicate and potassium fluorosilicate) to be removed in a timely manner. Simultaneously, H2SO4 also has an adhesive effect on the etching products, further reducing the risk of etching products accumulating inside the holes and effectively preventing defects such as irregular hole shapes, uneven hole diameters, and non-conductive holes. By adjusting the ratio of HF to H2SO4 in the first etching solution, the etching rate can be effectively controlled, the via effect improved, and vias with regular shapes, uniform sizes, and smooth, rounded surfaces can be obtained.

[0086] As an example, the mass fraction of HF solution contained in the first etching solution can be 3 parts, 3.2 parts, 3.4 parts, 3.5 parts, 3.6 parts, 3.8 parts, or 4 parts. The mass fraction of HF in the HF solution can be 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, or 60%, and more preferably 35% to 45%.

[0087] As an example, the mass fraction of H2SO4 solution contained in the first etching solution can be 2 parts, 2.2 parts, 2.4 parts, 2.5 parts, 2.6 parts, 2.8 parts, or 3 parts. The mass fraction of H2SO4 in the H2SO4 solution can be 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, or 98%, and more preferably 75% to 85%.

[0088] As an example, the water content in the first etching solution can be 14, 15, 16, 17, 18, 19, or 20 parts by mass. There are no special restrictions on the type of water; it can be tap water, deionized water, distilled water, reverse osmosis water, pure water, or ultrapure water. Using tap water helps reduce costs, while using deionized water or pure water helps improve etching quality and enhance the through-hole effect.

[0089] Optionally, the method of processing through-holes in a glass substrate using a first etchant containing HF and H2SO4 includes one or more of horizontal etching, immersion etching, and atomization etching.

[0090] Optionally, the horizontal etching method includes the following steps: placing the glass substrate on the carrier plate of the horizontal etching machine, using a rolling shaft to move the carrier plate horizontally forward, passing through several liquid blades during the process, and using the first etching liquid flowing down from the liquid blades to etch through holes in the glass substrate on the carrier plate.

[0091] Optionally, the immersion etching method includes the following steps: vertically inserting a glass substrate into a basket and placing the basket in an etching tank containing a first etching solution for vertical immersion etching of the through-hole. During the immersion process, the etching tank is supported and operated by a robotic arm, which can be used to shake the etching tank to improve etching efficiency.

[0092] Optionally, the atomization etching method includes the following steps: atomizing a first etching solution to form a spray, and using the spray to perform atomization etching on the glass substrate. Specifically, the first etching solution is prepared using a mother liquor tank, the first etching solution is atomized using an atomization tank, and a spray containing the first etching solution is sprayed out from the nozzle of the atomization tank, and the spray is used to perform atomization etching on the glass substrate.

[0093] Understandably, atomized etching can create a uniform spray, and the etching process is slower and more stable, resulting in better through-hole performance, more uniform pore size, more regular pore shape, and higher through-hole rate. During atomized etching, the spray comes into contact with surfaces A and B, but surface B is protected by a protective film and is not etched, while surface A is etched entirely. The etching process extends from the pre-penetration points on surface A towards surface B and towards the periphery of the pre-penetration points, thus forming tapered through-holes and having a certain thinning effect.

[0094] Optionally, the total flow rate of the spray is 1100 L / min to 1300 L / min. As an example, the total flow rate of the spray can be 1100 L / min, 1150 L / min, 1200 L / min, 1250 L / min or 1300 L / min.

[0095] Optionally, the pressure at which the first etching solution is atomized into a spray (i.e., the pressure of the nozzle in the atomization chamber) is 0.85 kg / cm². 2 ~1kg / cm 2 As an example, the nozzle pressure can be 0.85 kg / cm². 2 0.9kg / cm 2 0.95kg / cm 2 or 1kg / cm 2 .

[0096] Optionally, the temperatures of the first etching solution and the spray are each independently between 20°C and 40°C. As an example, the temperatures of the first etching solution and the spray can each be independently 20°C, 22°C, 25°C, 28°C, 30°C, 32°C, 35°C, 38°C, or 40°C, and further optionally 26°C to 30°C.

[0097] Optionally, the atomization etching process employs a multi-round etching process. The number of etching rounds and the etching time for each round depend on factors such as the etching rate, the thickness of the glass substrate, and the total thinning amount of the glass substrate, and are not specifically limited. In some specific examples, the atomization etching process employs 2 to 3 rounds, with each round taking 1 to 15 minutes.

[0098] Optionally, the etching efficiency of the atomization etching process is <3 μm / min. As an example, the etching efficiency of the atomization etching process can be 0.1 μm / min, 0.5 μm / min, 1 μm / min, 1.5 μm / min, 2 μm / min, 2.5 μm / min or 2.9 μm / min.

[0099] Optionally, the single-sided etching depth of the atomization etching process is 15μm to 25μm. As examples, the single-sided etching depths of the atomization etching process are 15μm, 16μm, 17μm, 18μm, 19μm, 20μm, 21μm, 22μm, 23μm, 24μm, and 25μm.

[0100] Understandably, the single-sided etching amount in atomization etching refers to the thickness reduction of the glass substrate during the atomization etching process. As an example, if the thickness of the glass substrate before atomization etching is 0.115 mm and the single-sided etching amount is 15 μm, then the thickness of the glass substrate after atomization etching is 0.100 mm.

[0101] Optionally, after the atomization etching process, the method further includes the following step: performing a fourth cleaning process on the glass substrate to remove residual first etching solution and generated etching products. Specifically, the fourth cleaning process can be direct cleaning or ultrasonic cleaning, and the cleaning solution can be a solvent such as water, ethanol, or acetone.

[0102] Optionally, after the glass substrate undergoes through-hole treatment, the following step is further included: using a second etching solution to perform a film removal etching treatment on the glass substrate to remove the protective film. Specifically, the glass substrate after through-hole treatment is inserted into a basket, and the basket is placed in the etching tank of an etching immersion machine containing the second etching solution. The etching immersion machine then automatically runs the film removal etching treatment to remove the protective film.

[0103] Optionally, the second etching solution comprises an inorganic strong acid, or the second etching solution comprises an inorganic strong acid and an oxidant; wherein,

[0104] Inorganic strong acids include one or more of HNO3, H2SO4 and HCl;

[0105] Oxidizing agents include H2O2.

[0106] Understandably, the composition of the second etching solution depends on the material of the protective film. This application does not impose any special restrictions, and the appropriate composition can be selected to formulate the second etching solution according to the material of the protective film.

[0107] Optionally, the protective film is made of elemental molybdenum, and the second etching solution comprises HNO3, H2SO4, and water. Further optionally, the second etching solution comprises the following components in parts by weight: 5 parts of 65 wt.% HNO3 solution, 3 parts of 80 wt.% H2SO4 solution, and 2 parts of water. Still further optionally, the second etching solution also includes additives such as chelating agents or surfactants, and the total mass of the additives and water is 2 parts.

[0108] Optionally, the protective film is made of a nickel-copper alloy, and the second etching solution comprises HCl, H2O2, and water. Further optionally, the second etching solution comprises the following components in parts by weight: 4 parts of 37 wt.% HCl solution, 2 parts of 30 wt.% H2O2 solution, and 4 parts of water.

[0109] Optionally, the temperature for the stripping etching process is 30°C to 40°C. As an example, the temperature for the stripping etching process can be 30°C, 32°C, 34°C, 36°C, 38°C, or 40°C.

[0110] Optionally, the time for the stripping etching process is 10 min to 15 min. As an example, the time for the stripping etching process can be 10 min, 11 min, 12 min, 13 min, 14 min or 15 min.

[0111] Optionally, after the glass substrate undergoes the stripping etching process, the following step is further included: performing a fifth cleaning process on the glass substrate to remove residual second etching solution and generated etching products. Specifically, the fifth cleaning process can be direct cleaning or ultrasonic cleaning, and the cleaning solution can be a solvent such as water, ethanol, or acetone.

[0112] Optionally, after through-hole processing (or film removal etching) of the glass substrate, the thickness of the glass substrate is ≤0.1mm. More optionally, after through-hole processing of the glass substrate, the thickness of the glass substrate is 0.08mm~0.1mm.

[0113] Please see Figure 5 and Figure 6 ,in, Figure 5 This is a schematic diagram of the cross-sectional morphology of a through hole formed in one embodiment. Figure 6 This is a schematic diagram of the surface morphology of a through hole formed in one embodiment.

[0114] Optionally, the diameter of the through-hole decreases from surface A to surface B. That is, the through-hole formed on the glass substrate is tapered (e.g., ...). Figure 5(As shown by the black dashed line in the diagram), the diameter of the through-hole on surface A is the maximum diameter, and the diameter on surface B is the minimum diameter. Compared to traditional hourglass-shaped through-holes, tapered through-holes are easier to fill with conductive material, resulting in higher circuit conductivity and facilitating metallization within the through-holes in Mini-LED substrates. Furthermore, tapered through-holes offer higher connection density and wiring capabilities, better signal integrity and stability, and greater mechanical stability and shock resistance, making them suitable for other applications requiring tapered special-purpose holes.

[0115] Optionally, the ratio of the diameter of the through hole on surface A to the diameter of the through hole on surface B is (1.5~3):1, and more preferably (1.5~2.2):1. As an example, the ratio of the diameter of the through hole on surface A to the diameter of the through hole on surface B can be 1.5:1, 1.6:1, 1.7:1, 1.8:1, 1.9:1, 2:1, 2.1:1, 2.2:1, 2.3:1, 2.4:1, 2.5:1, 2.6:1, 2.7:1, 2.8:1, 2.9:1, or 3:1.

[0116] Optionally, the aperture of the through-hole on surface A is ≥30μm, and more preferably 30μm~120μm. As an example, the aperture of the through-hole on surface A can be 30μm, 40μm, 50μm, 60μm, 70μm, 80μm, 90μm, 100μm, 110μm or 120μm.

[0117] Optionally, the aperture of the via on surface B is ≤50μm, and more preferably 10μm~50μm. As an example, the aperture of the via on surface B can be 10μm, 15μm, 20μm, 25μm, 30μm, 35μm, 40μm, 45μm or 50μm.

[0118] In a second aspect, this application provides a Mini-LED substrate, which includes a glass substrate having a plurality of through holes, the through holes being formed using the through hole method for the glass substrate described above.

[0119] In a third aspect, this application provides a Mini-LED device, which includes the Mini-LED substrate described above.

[0120] The following description, in conjunction with specific embodiments and comparative examples, provides further details. Unless otherwise specified, all raw materials and instruments used in these embodiments and comparative examples are commercially available. Unless otherwise specified, all processes involved are conventionally chosen by those skilled in the art. The glass substrate is selected from Asahi Glass's soda-lime glass, with a thickness of 0.5 mm.

[0121] Example 1

[0122] The method for creating through-holes in the glass substrate in this embodiment is as follows:

[0123] (1) Provide a glass substrate with a thickness of 0.5 mm, having opposing A and B surfaces; reduce the thickness of the glass substrate to 0.115 mm by immersion in HF solution, and perform a first cleaning process to remove residual HF solution and surface contaminants.

[0124] (2) Place the thinned glass substrate on the worktable, with surface A away from the worktable. Use a laser device to laser-form multiple pre-penetrating points on surface A according to the required pattern, and perform a second cleaning process to remove glass debris from the surface.

[0125] (3) Using molybdenum as a metal target, a molybdenum protective film is deposited on the B surface of a glass substrate by magnetron sputtering, and a third cleaning process is performed to remove surface contaminants; wherein, the thickness of the molybdenum protective film is 400 nm, and the adhesion between the molybdenum protective film and the glass substrate is 5B as measured by the cross-cut adhesion test.

[0126] (4) The first etching solution is composed of the following raw materials:

[0127] ;

[0128] The first etching solution was prepared using a mother liquor tank, and then atomized using an atomizing chamber. The atomized solution was sprayed out through nozzles in the atomizing chamber, producing a spray containing the first etching solution. The total spray flow rate was 1200 L / min, and the nozzle pressure was 0.85 kg / cm². 2 The spray temperature is 26℃~30℃; the glass substrate is subjected to atomized etching using the spray for a total of 3 rounds, with an etching efficiency of 2.5μm / min and a single-sided etching amount of 15μm, which means that the thickness of the glass substrate after the through-hole is 95μm~100μm; the glass substrate after the through-hole is subjected to a fourth cleaning process using a water washing tank to remove residual first etching solution and etching products.

[0129] (5) The second etching solution is composed of the following raw materials:

[0130] ;

[0131] Insert the glass substrate with the through hole into the basket and place the basket in the etching tank of the etching immersion machine. The etching tank contains the second etching solution. The etching immersion machine will automatically run the film removal etching process at a temperature of 35±5℃ for 10 minutes to remove the protective film. After the film removal etching process, the glass substrate will undergo a fifth cleaning process to remove the residual second etching solution and etching products.

[0132] Example 2

[0133] The method for creating through-holes in the glass substrate in this embodiment is basically the same as in Embodiment 1, except that the atomization etching method in step (4) is replaced by the immersion etching method, as detailed below:

[0134] (4) The glass substrate after laser treatment and coating treatment is vertically inserted into the basket and placed in the etching tank containing the first etching solution to perform vertical immersion etching of the through hole. The etching efficiency is 2.5 μm / min and the single-sided etching amount is 15 μm. The glass substrate after the through hole is subjected to a fourth cleaning treatment to remove the residual first etching solution and etching products.

[0135] Example 3

[0136] The method for creating through-holes in the glass substrate in this embodiment is basically the same as in Embodiment 1, except that the molybdenum protective film in step (3) is replaced with a nickel-copper protective film, as detailed below:

[0137] (3) Using a nickel-copper alloy as the metal target, a nickel-copper protective film is deposited on the B surface of the glass substrate by magnetron sputtering, and a third cleaning process is performed to remove surface dirt; wherein, the thickness of the nickel-copper protective film is 400 nm, and the adhesion between the nickel-copper protective film and the glass substrate is 5B as measured by the cross-cut adhesion test.

[0138] Correspondingly, the second etching solution in step (5) is composed of the following raw materials:

[0139] .

[0140] Example 4

[0141] The method for creating through-holes in the glass substrate in this embodiment is basically the same as in Embodiment 1, except that the formulation of the first etching solution in step (4) is different, as follows:

[0142] (4) The first etching solution is composed of the following raw materials:

[0143] .

[0144] The first etching solution was prepared using a mother liquor tank, and then atomized using an atomizing chamber. The atomized solution was sprayed out through nozzles in the atomizing chamber, producing a spray containing the first etching solution. The total spray flow rate was 1200 L / min, and the nozzle pressure was 0.85 kg / cm². 2The spray temperature is 26℃~30℃; the glass substrate is subjected to atomized etching treatment by spraying for a total of 3 rounds, with an etching efficiency of 3μm / min and a single-sided etching amount of 15μm, that is, the thickness of the glass substrate after the through hole is 95μm~100μm; the glass substrate after the through hole is subjected to a fourth cleaning treatment by a water washing tank to remove the residual first etching solution and etching products.

[0145] Example 5

[0146] The through-hole method of the glass substrate in this embodiment is basically the same as that in embodiment 1, except that: in step (1), the thickness of the glass substrate is reduced to 0.35 mm, and the single-sided etching amount of the atomization etching process is 50 μm, that is, the thickness of the glass substrate after the through-hole process is 0.296 mm to 0.305 mm.

[0147] Comparative Example 1

[0148] The through-hole method of the glass substrate in this comparative example is basically the same as that in Example 1, except that the formulation of the first etching solution in step (4) is different, as follows:

[0149] (4) The first etching solution is composed of the following raw materials:

[0150] .

[0151] The first etching solution was prepared using a mother liquor tank, and then atomized using an atomizing chamber. The atomized solution was sprayed out through nozzles in the atomizing chamber, producing a spray containing the first etching solution. The total spray flow rate was 1200 L / min, and the nozzle pressure was 0.85 kg / cm². 2 The spray temperature is 26℃~30℃; the glass substrate is subjected to atomized etching treatment by spraying for a total of 4 rounds, with an etching efficiency of 3μm / min and a single-sided etching amount of 20μm, that is, the thickness of the glass substrate after the through hole is 90μm~95μm; the glass substrate after the through hole is subjected to a fourth cleaning treatment by a water washing tank to remove the residual first etching solution and etching products.

[0152] Comparative Example 2

[0153] The through-hole method of the glass substrate in this comparative example is basically the same as that in Example 1, except that the coating process in step (3) is replaced by attaching acid-resistant tape to surface B, and the film removal etching process in step (5) is replaced by peeling off the acid-resistant tape.

[0154] Comparative Example 3

[0155] The through-hole method of the glass substrate in this comparative example is basically the same as that in Example 1, except that the coating process in step (3) and the stripping and etching process in step (5) are not performed.

[0156] Test case

[0157] The glass substrate after through-hole was subjected to the following tests, and the test results are shown in Table 1:

[0158] (1) Through hole ratio: Select 100,000 through holes in a 500mm×500mm area, record the number of through holes that are fully conductive, and calculate the through hole ratio.

[0159] (2) Hole morphology: Cut the glass substrate after the through hole, observe the cross section of the glass substrate directly, and record the morphology of the through hole.

[0160] (3) Inner-outer diameter ratio: Observe the aperture using a common optical image measuring instrument, measure the maximum and minimum aperture of the through hole, and record them as the outer diameter and inner diameter, respectively. Calculate the inner-outer diameter ratio according to the following formula: Inner-outer diameter ratio = Outer diameter / Inner diameter × 100%. For tapered through holes, the maximum aperture is the aperture on surface A, and the minimum aperture is the aperture on surface B; for hourglass-shaped through holes, the maximum aperture is the aperture on one of the surfaces, and the minimum aperture is the aperture in the middle between the two surfaces; for irregular through holes, select the maximum and minimum aperture points for measurement based on observation.

[0161] (4) Aperture roundness: The aperture roundness is calculated according to the following formula: Aperture roundness = 0.5 × (outer diameter - inner diameter);

[0162] (5) Aperture range: Calculate the range of the outer diameter and the inner diameter respectively, and take the maximum value of the two ranges as the aperture range. Wherein, outer diameter range = maximum outer diameter - minimum outer diameter, inner diameter range = maximum inner diameter - minimum inner diameter.

[0163] As shown in Table 1, the through-hole process of Examples 1-5 can form a large number of through-holes on the glass substrate, with a through-hole rate of 99.99% to 100%. The through-holes are all conical in shape. Specifically, the inner diameter (minimum aperture) of Examples 1-4 is 19μm to 26μm, and the outer diameter (maximum aperture) is 33μm to 37μm, while the inner diameter of Example 5 is 44μm to 47μm, and the outer diameter is 98μm to 103μm. Calculations show that the inner-outer diameter ratio is 1.5 to 2.2, the aperture roundness is 0 to 0.5, and the aperture range is 3μm to 10μm. Therefore, the through-hole process of Example 1 has an extremely high through-hole rate, and the resulting through-holes are conical through-holes with uniform roundness, regular shape, and uniform aperture, demonstrating excellent through-hole performance.

[0164] Compared to Example 1, Example 2 uses an immersion etching method, resulting in a slight decrease in the through-hole ratio and a larger pore size range. This demonstrates that using atomization etching for through-holes is beneficial for improving the through-hole ratio and pore size uniformity. Example 3 uses a nickel-copper protective film, and the resulting through-holes are very similar to those in Example 1 using a molybdenum protective film. Example 4 changes the formulation of the first etching solution, and the resulting through-holes are very similar to those in Example 1 using a molybdenum protective film. Example 5 changes the thickness of the glass substrate after thinning, leading to an increase in the inner diameter, outer diameter, inner-outer diameter ratio, and pore size range. Therefore, the uniformity of the inner diameter, outer diameter, inner-outer diameter ratio, and pore size can be increased by increasing the thinning amount in the thinning process or extending the etching time in the atomization etching process.

[0165] In Comparative Example 1, the first etching solution contained only HF and no H2SO4. The etching crystals (i.e., salt products generated during the through-hole process) could not be processed and accumulated inside the holes, resulting in defects such as a small number of blocked holes, rough and dull hole walls, and irregular hole shapes. The through-hole rate decreased to 86%, while the hole diameter roundness was significantly improved, but the roundness was uneven. Comparative Example 2 used acid-resistant tape to protect surface B. Due to the poor adhesion between the acid-resistant tape and the glass substrate, lateral etching occurred during the atomization etching process. The resulting through-holes exhibited crescent-shaped corrosion, and a small number of through-holes had irregular shapes with an outer diameter difference of up to 105 μm, severely affecting the filling of conductive materials and circuit conductivity. Comparative Example 3 did not undergo coating or stripping etching treatment. The resulting through-holes exhibited a traditional hourglass shape, which is unfavorable for metallization.

[0166] Table 1. Comparison of parameters for through holes in glass substrates

[0167]

[0168] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0169] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of protection of this application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these modifications and improvements all fall within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the appended claims.

Claims

1. A method for creating through-holes in a glass substrate, characterized in that, Includes the following steps: A glass substrate is provided, the glass substrate having opposing A surfaces and B surfaces; The surface A is laser-treated to form pre-penetrating dots, and the surface B is coated to form a protective film. The glass substrate is subjected to through-hole treatment using a first etching solution to form through-holes extending from pre-penetrating lattice points on surface A to surface B; the first etching solution comprises the following raw materials in parts by weight: ； The HF solution contains 20% to 60% HF by mass. The mass fraction of H2SO4 in the H2SO4 solution is 60%~98%; The method for processing through-holes in the glass substrate using the first etching solution includes an atomization etching method, which includes the following steps: The first etching solution is atomized to form a spray, and the spray is used to perform atomized etching on the glass substrate; The total flow rate of the atomized etching spray is 1100 L / min to 1300 L / min, and the pressure at which the first etching solution is atomized into a spray is 0.85 kg / cm². 2 ~1kg / cm 2 The temperature of the first etching solution and spray is 20℃~40℃, the etching efficiency is less than 3μm / min, and the single-sided etching amount is 15μm~25μm.

2. The method for through-hole construction of a glass substrate as described in claim 1, characterized in that, The diameter of the through hole decreases from the surface A to the surface B.

3. The method for through-hole construction of a glass substrate as described in claim 2, characterized in that, The ratio of the diameter of the through hole on surface A to the diameter of the through hole on surface B is (1.5~3):

1.

4. The method for through-hole construction of a glass substrate as described in any one of claims 1 to 3, characterized in that, The adhesion between the protective film and the glass substrate reaches 5B or higher.

5. The method for through-hole construction of a glass substrate as described in any one of claims 1 to 3, characterized in that, The method for coating the surface B includes magnetron sputtering.

6. The method for through-hole construction of a glass substrate as described in claim 5, characterized in that, The protective film satisfies one or more of the following conditions: (1) The material of the protective film includes one or more of molybdenum, lead, nickel, chromium and copper; (2) The thickness of the protective film is 400nm~600nm.

7. The method for through-hole construction of a glass substrate as described in claim 6, characterized in that, After performing through-hole processing on the glass substrate, the following steps are also included: The glass substrate is subjected to a second etching solution to remove the protective film.

8. The method for through-hole construction of a glass substrate as described in claim 7, characterized in that, The second etching solution comprises an inorganic strong acid, or the second etching solution comprises an inorganic strong acid and an oxidant. The inorganic strong acid includes one or more of HNO3, H2SO4 and HCl; The oxidant includes H2O2.

9. The method for through-hole construction of a glass substrate as described in any one of claims 1 to 3, characterized in that, Before laser treatment of surface A, the following steps are also included: The thickness of the glass substrate is reduced to 0.115mm~0.125mm through a thinning process.

10. The method for through-hole construction of a glass substrate as described in claim 9, characterized in that, After the glass substrate is perforated, the thickness of the glass substrate is ≤0.1mm.

11. A Mini-LED substrate, characterized in that, The Mini-LED substrate includes a glass substrate with a plurality of through holes, the through holes being formed using the through hole method of the glass substrate as described in any one of claims 1 to 10.

12. A Mini-LED device, characterized in that, The Mini-LED device includes the Mini-LED substrate as described in claim 11.

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