Processing method for synchronous sintering of passive components and chips and semiconductor assembly

Abstract

The present invention discloses a processing method for synchronously sintering passive devices and chips, and a semiconductor assembly. The processing method includes forming a device groove in the surface layer of the top copper layer of a copper-clad ceramic substrate, assembling a steel mesh that matches the size of the groove at the device groove, applying a sintered silver soldering material at the starting printing position of the steel mesh and scraping it with a scraper, spreading the sintered silver on multiple printing areas at the opening of the steel mesh, pre-baking the copper-clad ceramic substrate at high temperature, and then assembling the passive devices and chips. The upper and lower sides of the copper-clad ceramic substrate assembled with the passive devices and chips are pressurized and sintered at high temperature, thereby synchronously sintering and fixing the passive devices and chips to obtain a semiconductor assembly. The above-mentioned processing method sets the device groove and assembles the steel mesh according to the size of the passive device, and achieves synchronous sintering of the passive device and chip through two sintering steps, which reduces the sample preparation process in the packaging process, eliminates the need to make pressure head molds of different specifications, and improves the efficiency of the packaging process.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor packaging, and in particular to a processing method for synchronously sintering a passive device and a chip, and a semiconductor assembly. Background Art

[0002] Currently, during the pressure sintering process of semiconductor power module packaging, the base thickness of different components varies. For example, passive components such as gate resistors (Rg) and positive temperature coefficient thermistors (PTCs) are relatively thick, and their thickness is usually greater than that of SiC MOSFET chips. Due to the significant difference in thickness between these two passive components and the chip, after being soldered to the copper-clad ceramic substrate, the tops are not on the same horizontal plane, making simultaneous pressure sintering impossible. The following method is currently commonly used.

[0003] One method involves sintering the chip first, then adding another step to sinter a passive component (e.g., gate resistor Rg), and then another step to sinter the next passive component (e.g., positive temperature coefficient thermistor PTC). This method is inefficient, resulting in insufficient bonding between the component and the copper-clad ceramic substrate after sintering. The additional steps increase the risk of oxidation of the copper layer on the substrate surface, and only one component (B) is used in a module. When sintering component B alone, the pressure per unit area is too high, causing it to break.

[0004] Another method is to use a customized indenter mold with different height planes. This method can only produce corresponding customized molds according to fixed models of device A and device B. If different performance chips are used to match different models of passive devices for installation, multiple molds need to be customized again. Not only are the number of modules large, but the mold cost is too high, and management and use are troublesome, resulting in low processing and manufacturing efficiency.

[0005] These two methods require more steps or many customized molds, which will increase the cost significantly and have poor manufacturing efficiency. Therefore, the pressure sintering process for passive components and chips in the existing technology has the problem of low processing efficiency. Summary of the Invention

[0006] The embodiments of the present invention provide a processing method for synchronously sintering passive components and chips and a semiconductor assembly, aiming to solve the problem of low processing efficiency in the pressure sintering process of passive components and chips in the prior art methods.

[0007] In a first aspect, an embodiment of the present application provides a method for simultaneously sintering a passive component and a chip, wherein the method comprises:

[0008] According to the size of each passive component, a device groove is formed on the surface of the top copper layer of the copper-clad ceramic substrate;

[0009] Assembling a steel mesh that matches the size of the groove at the device groove;

[0010] Applying sintered silver solder material at the starting printing position of the steel mesh; the starting printing position is the outer edge of the printing area formed at the opening of the steel mesh;

[0011] Use a scraper to scrape the surface of the steel mesh closely so that the sintered silver solder material is spread evenly on the surface of the printing area;

[0012] Pre-baking the copper-clad ceramic substrate covered with sintered silver solder material at high temperature;

[0013] Assembling passive components and chips in the mounting area corresponding to the printing area, and contacting and bonding the passive components and chips with sintered silver;

[0014] The upper and lower sides of the copper-clad ceramic substrate on which the passive components and chips are assembled are pressurized by a sintering furnace mold and sent into a high-temperature environment for sintering, so as to sinter and fix the passive components and the chips synchronously.

[0015] In a second aspect, an embodiment of the present application further provides a method for simultaneously sintering a passive component and a chip, wherein the method comprises:

[0016] According to the size of each passive component, a device groove is formed on the surface of the top copper layer of the copper-clad ceramic substrate;

[0017] Assemble the passive components and chips with silver film on the bottom in the chip mounting areas corresponding to the device grooves:

[0018] The upper and lower sides of the copper-clad ceramic substrate on which the passive components and chips are assembled are pressurized by a sintering furnace mold and sent into a high-temperature environment for sintering, so as to sinter and fix the passive components and the chips synchronously.

[0019] In a third aspect, an embodiment of the present application further provides a semiconductor component, wherein the semiconductor component is processed using the processing method described in the first aspect or the second aspect, and the semiconductor component includes a copper-clad ceramic substrate, a passive device, and a chip;

[0020] The copper-clad ceramic substrate includes a front copper layer, a back copper layer, and a ceramic layer sandwiched between the front copper layer and the back copper layer;

[0021] A device groove is provided on the front copper layer of the copper-clad ceramic substrate; sintered silver is laid on the bottom surface of the device groove, and the passive device is adhesively fixed to the sintered silver on the bottom surface of the device groove;

[0022] Sintered silver is provided between the front copper layer of the copper-clad ceramic substrate and the chip, and the chip is adhesively fixed to the sintered silver on the front copper layer;

[0023] The top surface height of the chip is flush with the top surface height of the passive component.

[0024] An embodiment of the present invention provides a processing method for synchronously sintering passive devices and chips and a semiconductor component. The processing method includes forming a device groove in the surface layer of the top copper layer of a copper-clad ceramic substrate, assembling a steel mesh that matches the size of the groove at the device groove, coating a sintered silver soldering material at the starting printing position of the steel mesh and scraping it with a scraper, and spreading the sintered silver on multiple printing areas at the opening of the steel mesh. After high-temperature pre-baking the copper-clad ceramic substrate, passive devices and chips are assembled thereon, and the upper and lower sides of the copper-clad ceramic substrate assembled with the passive devices and chips are pressurized and sintered at high temperature, thereby synchronously sintering and fixing the passive devices and chips to obtain a semiconductor component. The above-mentioned processing method sets the device groove and assembles the steel mesh according to the size of the passive device, and realizes the synchronous sintering and fixing of the passive device and the chip through two sintering steps, reducing the sample preparation steps in the packaging process, eliminating the need to make multiple pressure head molds of different specifications, and improving the efficiency of the packaging processing; and also reduces the risk of substrate oxidation that is prone to occur compared to the multi-step sintering process, solves the problem of easy breakage of thermistor PTC during the sintering process, and realizes high-reliability, low-cost synchronous sintering packaging of passive devices and chips. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0026] Figure 1 A flow chart of a method for synchronously sintering a passive component and a chip according to an embodiment of the present invention;

[0027] Figure 2 Another method flow chart of the processing method for synchronously sintering passive components and chips provided by an embodiment of the present invention;

[0028] Figure 3 A side structural diagram of a ceramic substrate provided in an embodiment of the present invention;

[0029] Figure 4 A side structural diagram of a ceramic substrate and a steel mesh provided in an embodiment of the present invention;

[0030] Figure 5 Another side structural diagram of the ceramic substrate and steel mesh provided in an embodiment of the present invention;

[0031] Figure 6 An application structure diagram of a ceramic substrate provided in an embodiment of the present invention;

[0032] Figure 7 A schematic diagram of a processing process of a semiconductor component provided by an embodiment of the present invention;

[0033] Figure 8 A schematic diagram of another processing process of a semiconductor component provided by an embodiment of the present invention;

[0034] Figure 9 A partial structural diagram of a semiconductor component processing process provided by an embodiment of the present invention;

[0035] Figure 10 A schematic diagram of another processing process of a semiconductor component provided by an embodiment of the present invention;

[0036] Figure 11 Another partial structural diagram of the processing process of the semiconductor component provided by the embodiment of the present invention;

[0037] Figure 12 A schematic diagram of another processing process of a semiconductor component provided by an embodiment of the present invention;

[0038] Figure 13 A schematic diagram of a subsequent processing step of a semiconductor component according to an embodiment of the present invention;

[0039] Figure 14 A schematic diagram of another processing step of a semiconductor component according to an embodiment of the present invention;

[0040] Figure 15 A schematic diagram of another processing step of a semiconductor component according to an embodiment of the present invention;

[0041] Figure 16 A schematic diagram of a subsequent processing process of a semiconductor component provided by an embodiment of the present invention;

[0042] Figure 17 A schematic diagram of another subsequent processing step of the semiconductor component provided by an embodiment of the present invention;

[0043] Figure 18 A schematic diagram of another subsequent processing process of the semiconductor component provided by the embodiment of the present invention;

[0044] Figure 19 A schematic diagram of a subsequent processing step of a semiconductor component provided by an embodiment of the present invention;

[0045] Figure 20 An overall structural diagram of a semiconductor component provided by an embodiment of the present invention;

[0046] Figure 21 Another overall structural diagram of a semiconductor component provided by an embodiment of the present invention.

[0047] Figure numerals: 1. copper-clad ceramic substrate; 2. steel mesh; 3. chip; 4. device A; 5. device B; 6. sintered silver soldering material; 61. sintered silver; 7. scraper; 8. sintering furnace mold; 81. upper mold; 82. lower mold; 11. ceramic layer; 12. top copper layer; 13. bottom copper layer; 121. device groove. DETAILED DESCRIPTION

[0048] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0049] It will be understood that when used in this specification and the appended claims, the terms “comprises” and “comprising” indicate the presence of described features, integers, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof.

[0050] It should also be understood that the terminology used in this specification is for the purpose of describing specific embodiments only and is not intended to limit the present invention. As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms unless the context clearly indicates otherwise. It should further be understood that the term "and / or" as used in this specification and the appended claims refers to any and all possible combinations of one or more of the associated listed items, including and including these combinations.

[0051] See also Figure 1 As shown in the figure, an embodiment of the present application discloses a processing method for synchronously sintering passive components and chips, wherein the processing method includes steps S110 to S170.

[0052] S110 , opening device grooves on the surface of the top copper layer of the copper-clad ceramic substrate according to the size of each passive device.

[0053] A device groove 121 can be opened on the surface of the top copper layer 12 of the copper-clad ceramic substrate 1 according to the size of the passive device. The size of the device groove 121 opened corresponds to the size of the passive device. The device groove 121 is also a groove structure for assembling the device. Generally speaking, the outer dimensions of the device groove 121 are larger than the outer dimensions of the passive device. The structure of the copper-clad ceramic substrate 1 with the device groove 121 is as follows: Figure 6 shown.

[0054] like Figure 3 As shown, the depth of device recess 121 for device A4 (hereinafter referred to as device A4 refers to gate resistor Rg) can be defined as Z1, and the depth of device recess 121 for device B5 (hereinafter referred to as device B5 refers to positive temperature coefficient thermistor PTC) can be defined as Z2. Devices A4 and B5 are both passive components. The thickness of device A4 is Za, the thickness of device B5 is Zb, and the thickness of chip 3 is Zc. The depth of device recess 121 can be calculated by setting the depth of device recess 121 to the difference between the thickness of device A4 and chip 3, and the thickness of device B5 and chip 3, respectively. In other words, Z1 = Za - Zc, and Z2 = Zb - Zc.

[0055] like Figure 4 As shown, the length of device recess 121 for device A4 can be defined as X1, and the length of device recess 121 for device B can be defined as X2. Device A4 has a length of Xa, and device B has a length of Xb. Xs is the X-direction allowance for the sintered silver 61 at the bottom of the device. Xg is the X-direction length of the bottom surface of the L-shaped recess in stencil 2. Hg is the thickness of the bend in the recess of stencil 2. Xj is the X-direction gap between stencil 2 and the sidewall of device recess 121. Therefore, the X-direction length of device recess 121 for device A4 is X1 = Xa + (Xs + Xg + Hg + Xj) × 2, and the X-direction length of device recess 121 for device B is X2 = Xb + (Xs + Xg + Hg + Xj) × 2.

[0056] like Figure 5As shown, the width of the device recess 121 for device A4 can be defined as Y1, and the width of the device recess 121 for device B can be defined as Y2. The width of device A4 is Ya, the width of device B is Yb, Ys is the Y-direction unilateral overflow value of the sintered silver 61 at the bottom of the device, Yg is the Y-direction length of the bottom surface of the L-shaped recess in the stencil 2, Hg is the Y-direction thickness of the bend in the recess of the stencil 2, and Yj is the Y-direction gap between the stencil 2 and the sidewall of the device recess 121. Similarly, the Y-direction width of the device recess 121 for device A4 can be calculated as Y1 = Ya + (Ys + Yg + Hg + Yj) × 2, and the Y-direction width of the device recess 121 for device B can be calculated as Y2 = Yb + (Ys + Yg + Hg + Yj) × 2.

[0057] S120, assembling a steel mesh that matches the size of the groove at the device groove.

[0058] The steel mesh 2 is installed at the device groove 121, and the steel mesh 2 installed in each groove corresponds to the size of the groove, wherein the steel mesh 2 is a 3D printed steel mesh 2. The specific setting position of the steel mesh 2 is as follows Figures 3 to 5 shown.

[0059] S130, coating a sintered silver solder material at the initial printing position of the steel mesh.

[0060] Furthermore, the opening in the center of the stencil 2 forms a printing area. Thus, each stencil 2 corresponds to one printing area, and the plurality of stencils 2 provided form multiple printing areas. Sintered silver solder material 6 is applied to the starting printing position of the printing area corresponding to each stencil 2. The starting printing position is the outer edge of the printing area formed by the opening of the stencil 2.

[0061] S140, using a scraper to scrape the surface of the steel mesh closely, so that the sintered silver solder material is spread evenly over the surface of the printing area.

[0062] A scraper 7 is used to scrape against the surface of the stencil 2, so that the sintered silver solder material 6 is evenly spread over the surface of the printing area. The thickness of the sintered silver solder material 6 applied to the surface of the printing area is equal to the thickness of the stencil 2. Subsequently, a scraper 77 is used to scrape the surface of the stencil 2, so that the sintered silver solder material 6 applied in step S130 is evenly spread over the surface of the printing area. After the applied sintered silver solder material 6 is applied, the thickness of the sintered silver solder material 6 applied to the surface of the printing area is equal to the thickness of the stencil 2. The specific operation steps of this application require the use of a suitable 3D stencil 2 and a 3D scraper 7. The 3D scraper 7 used in this application is a split scraper 7, unlike conventional one-piece scrapers 7. The scraper 7 blade corresponding to the printing area must be separable, movable, and rotatable. The specific scraper 7 preparation structure and device are beyond the scope of this article.

[0063] In a specific embodiment, step S140 specifically includes the following steps: the scraper moves parallel to the surface of the steel mesh at an angle of 60 degrees; when the scraper extends into the L-shaped concave platform of the steel mesh, the rear end of the scraper blade moves vertically along the inner side wall of one side of the steel mesh, and the inner side wall of the steel mesh is a vertical wall surface wrapped around the side wall of the device groove; the front end of the scraper is against the top surface of the L-shaped concave platform in the steel mesh and moves horizontally to scrape the surface of the sintered silver solder material flat so that the sintered silver solder material is flattened. ; The scraper forms an angle of 60° with the top surface of the L-shaped recess; when the scraper contacts the edge of the L-shaped recess of the steel mesh and slides upward from the L-shaped recess, the direction of the scraper is adjusted to be vertical, and the side of the scraper is moved vertically close to the inner wall of the other side of the steel mesh; the front end of the scraper completely slides out of the L-shaped recess in the steel mesh, and the scraper is adjusted to form an angle of 60° with the surface of the steel mesh and continues to move parallel to it; repeat the above steps until the surfaces of all printing areas are flatly covered with the sintered silver soldering material.

[0064] Specifically, you can first use the scraper to move parallel to the surface of the steel mesh at a 60° angle, that is, the bottom blade of the 3D scraper is close to the front of the 3D steel mesh, and forms a 60° conventional printing angle with the front of the steel mesh. Start moving steadily in the Y direction to scrape the sintered silver across the front of the 3D steel mesh. The specific operation process is as follows: Figure 7 shown.

[0065] Furthermore, when the scraper scrapes the L-shaped concave platform of the steel mesh and goes down into the L-shaped concave platform, the rear end of the scraper blade in the printing direction moves vertically along the inner side wall of one side of the steel mesh, that is, the rear end of the scraper blade moves vertically downward until the bottom of the blade contacts the top surface of the L-shaped concave platform in the steel mesh and stops. The inner side wall of the steel mesh is a vertical wall wrapped around the side wall of the device groove. The specific operation process is as follows Figure 8 shown.

[0066] Continue to move the scraper along the printing direction and print the sintered silver steadily on the printing area corresponding to the device groove. At this time, the thickness of the sintered silver solder material on the surface of the printing area is equal to the thickness of the steel mesh. During this process, keep the scraper at a 60° angle to the top surface of the L-shaped concave platform. The specific operation process is as follows: Figure 9 shown.

[0067] When the scraper contacts the edge of the L-shaped concave and slides upward from the L-shaped concave, adjust the direction of the scraper to vertical. At this time, the side of the scraper is close to the inner wall of the other side of the steel mesh and moves vertically. The specific operation process is as follows: Figure 10 shown.

[0068] Continue to move forward until the scraper contacts the side wall on the left side of the steel mesh opening in the device groove. At this time, the scraper briefly stops moving in the Y direction and moves upward in the vertical direction until the front end of the scraper blade coincides with the top edge of the left side of the steel mesh opening in the device groove. The specific operation process is as follows: Figure 11 shown.

[0069] When the front end of the scraper completely slides out of the L-shaped concave platform in the steel mesh, adjust the scraper to a 60° angle with the surface of the steel mesh and continue to move parallel to it. That is, rotate the split scraper counterclockwise until the split scraper and the steel mesh maintain a 60° normal printing angle. At this time, the split scraper surface and the integral scraper surface at the printing chip position are re-overlapped. The specific operation process is as follows: Figure 12 shown.

[0070] Continue to move along the Y direction to complete the printing of sintered silver in the chip printing area. The specific operation process is as follows: Figure 13 Repeat the above steps until the surface of all printed areas is flatly covered with the sintered silver solder material. The scraper moves to the printing area corresponding to device A. Its working principle is similar to the specific operation process of flatly covering the printing area of ​​device B with the sintered silver solder material. The specific operation process is as follows: Figure 14 shown.

[0071] Lift the 3D steel mesh upwards and demould to complete the printing process. At this time, the sintered silver will slightly overflow to the surroundings, and the overall sintered silver thickness will slightly decrease, but the sintered silver at all positions will still be of the same thickness. Figure 15As shown. The dimensions of the sintered silver solder material when it is flattened in the printing area are larger than the dimensions of the passive components and chips installed in the chip mounting area corresponding to the printing area. After the sintered silver solder material is flattened on the surface of the printing area, the dimensions of the flattened sintered silver solder material are larger than the dimensions of the passive components and chips to be installed. The specific structure is as shown. Figure 15 shown.

[0072] S150, pre-baking the copper-clad ceramic substrate covered with the sintered silver solder material at high temperature.

[0073] The copper-clad ceramic substrate covered with sintered silver solder material is pre-baked at high temperature.

[0074] Before installing chips and devices, sintered silver needs to be pre-baked at high temperature to remove some fillers that increase fluidity inside the material and pre-solidify it. The baking parameters are set according to the recommended parameters in the characteristic table of the sintered silver material itself. After baking, the thickness of the sintered silver will be further reduced, but the thickness of the sintered silver at all positions remains consistent. The structure of the copper-clad ceramic substrate after high-temperature pre-baking is as follows: Figure 16 shown.

[0075] S160, respectively assembling the passive components and the chip in the mounting area corresponding to the printing area, and contacting and bonding the passive components and the chip with the sintered silver.

[0076] The passive components and chips are assembled in the printing area respectively. At this time, the passive components and chips are in contact with and bonded to the sintered silver at the bottom. The device structure obtained is as follows: Figure 17 shown.

[0077] In a specific embodiment, step S160 specifically includes the following steps: assembling the passive components and the chip in the mounting area corresponding to the printing area and performing a pressurizing treatment so that the passive components and the chip are in contact with and bonded to the sintered silver; the pressure of the pressurizing treatment is 15-35 kg / cm 2 ; The duration of the pressure treatment is 0.25-5 minutes.

[0078] Specifically, after the passive components and chips are assembled in the printing area, they can be pressurized by external equipment, that is, pressure is applied to the upper ends of the passive components and chips so that the passive components and chips can be in close contact with and bonded to the sintered silver; wherein the pressure of the pressurization treatment can be 15-35kg / cm 2 The duration of the pressure treatment is 0.25-5 minutes.

[0079] S170, pressurizing the upper and lower sides of the copper-clad ceramic substrate on which the passive components and the chip are assembled through a sintering furnace mold and sending it into a high-temperature environment for sintering, so as to simultaneously sinter and fix the passive components and the chip.

[0080] The upper and lower sides of the copper-clad ceramic substrate on which the passive components and chips are assembled are pressurized by a sintering furnace mold and sent into a high-temperature environment for sintering, so as to simultaneously sinter and fix the passive components and the chips. The pressure on the upper and lower sides of the copper-clad ceramic substrate on which the passive components and chips are assembled is 150-250 kg / cm 2 , and the pressure applied to the upper and lower sides of the copper-clad ceramic substrate on which the passive components and chips are assembled is greater than the pressure of the pressurization treatment; the baking temperature of the high-temperature pre-baking is lower than the temperature for sintering in a high-temperature environment.

[0081] The upper and lower sides of the copper-clad ceramic substrate on which the passive components and chips are assembled are pressurized by the sintering furnace mold 8. The specific operation process is as follows: Figure 18 and Figure 19 As shown, the sintering furnace mold 8 includes an upper mold 81 and a lower mold 82 . Figure 18 The operation process of pressing the upper mold down, Figure 19 The specific structure after the upper mold is pressed down into place. When the upper and lower sides of the copper-clad ceramic substrate are kept under pressure, it is sent into a high-temperature environment for sintering. At this time, the passive components and the chip can be sintered and fixed synchronously. At this time, the thickness of the sintered silver will be further reduced, but the thickness of the sintered silver at all positions remains consistent. At this point, the synchronous sintering of device A, device B, and chip C is completed. The semiconductor component obtained after sintering is as follows Figure 20 As shown, it can be seen that Figure 20 The thickness of the sintered silver after the medium sintering fixation is smaller than the thickness of the sintered silver after the high temperature pre-baking.

[0082] The pressure on the upper and lower sides of the copper-clad ceramic substrate where passive components and chips are assembled is 150-250 kg / cm 2 The pressure applied here is greater than the pressure used in the aforementioned pressurization process. The pressure applied to the upper and lower sides of the copper-clad ceramic substrate, where the passive components and chips are mounted, is approximately six times greater than the pressure used in the aforementioned pressurization process. The sintering temperature here is higher than the high-temperature pre-bake temperature.

[0083] The passive components are placed on the sintered silver laid in the corresponding device grooves on the front copper layer circuit surface of the copper-clad ceramic substrate, and the chip is placed on the sintered silver pre-placed at the corresponding sintering position on the front copper layer circuit surface of the copper-clad ceramic substrate. The thickness of the sintered silver is kept consistent, which can ensure that the top of each passive component and the chip are at the same level, and can be sintered in one step. Its actual application effect is as follows Figure 6shown.

[0084] See also Figure 2 As shown in the figure, the embodiment of the present application also discloses a processing method for synchronous sintering of passive components and chips, wherein the processing method includes steps S210 to S230.

[0085] S210 , forming device grooves on the surface of the top copper layer of the copper-clad ceramic substrate according to the size of each passive device.

[0086] The operation steps for forming the device groove here are the same as those in the above S110 and will not be described in detail here.

[0087] S220, respectively assembling the passive components and chips with silver films bonded to the bottom in the chip mounting areas corresponding to the device grooves.

[0088] At this time, the passive components with silver film bonded to the bottom and the chips with silver film bonded to the bottom can be directly mounted in the mounting area corresponding to the device groove. That is, silver film is used here instead of sintered silver for mounting.

[0089] Before assembling the passive components and chips with silver films bonded to the bottom in the chip mounting areas corresponding to the device grooves, the method further includes: placing a silver film on the bottom surface of the passive components or chips; applying a specific pressure on the silver film to press-bond the silver film to the back surface of the passive components or the back surface of the chip, and breaking the silver film at the edge of the passive chip or at the edge of the chip to obtain the passive components and chips with silver films bonded to the bottom; the specific pressure is 1-4 kg / cm 2 .

[0090] Specifically, if the passive components and chips are mounted using silver film, the Xs and Ys (the single-side reserved overflow value of the sintered silver at the bottom of the device) defined above can be set to 0. The specific operation process of silver film bonding is to use a mounting machine to pick up the passive components and chips, first place the passive components or chips on top of the silver film, and then apply a specific pressure to allow the bottom of the passive components or chips to contact the pre-baked silver film. The pre-baked silver film is equivalent to the above-mentioned sintered silver. At this time, the bottom edge of the passive component or chip exerts a greater pressure on the silver film, which will cut off the silver film. The bottom of the passive component and chip will be bonded to the silver film material, and then mounted. Therefore, the size of the silver film bonded to the bottom is consistent with the external dimensions of the passive component or chip. The pressure for pressurization is 1-4kg / cm 2 .

[0091] S230, pressurizing the upper and lower sides of the copper-clad ceramic substrate on which the passive components and the chip are assembled through a sintering furnace mold and sending it into a high-temperature environment for sintering, so as to simultaneously sinter and fix the passive components and the chip.

[0092] The specific process of pressurizing and sintering here is similar to the above step S170 and will not be described in detail here. Figure 21 shown.

[0093] The embodiment of the present invention further provides a semiconductor component, which is obtained by processing using the processing method described in the above embodiment, such as Figure 20 and Figure 21 As shown, the semiconductor component includes a copper-clad ceramic substrate 1, a passive device and a chip 3; the copper-clad ceramic substrate 1 includes a front copper layer, a back copper layer, and a ceramic layer 11 sandwiched between the front copper layer and the back copper layer; a device groove 121 is provided on the front copper layer of the copper-clad ceramic substrate 1; sintered silver 61 is laid on the bottom surface of the device groove 121, and the passive device is adhesively fixed to the sintered silver 61 on the bottom surface of the device groove 121; sintered silver 61 is provided between the front copper layer of the copper-clad ceramic substrate 1 and the chip 3, and the chip 3 is adhesively fixed to the sintered silver 61 on the front copper layer; the top surface of the chip 3 is flush with the top surface height of the passive device.

[0094] The processing method and semiconductor assembly for synchronous sintering of passive components and chips provided in an embodiment of the present invention include forming a device groove in the surface layer of the top copper layer of a copper-clad ceramic substrate, assembling a steel mesh with a size matching the groove at the device groove, applying a sintered silver soldering material at the starting printing position of the steel mesh and scraping it with a scraper, spreading the sintered silver screen printing on multiple printing areas at the opening of the steel mesh, pre-baking the copper-clad ceramic substrate at high temperature and then assembling the passive components and chips, and pressurizing and sintering the upper and lower sides of the copper-clad ceramic substrate with the passive components and chips assembled at high temperature, thereby synchronously sintering and fixing the passive components and chips to obtain a semiconductor assembly. The above-mentioned processing method sets the device groove and assembles the steel mesh according to the size of the passive device, and realizes the synchronous sintering and fixing of the passive device and the chip through two sintering steps, reducing the sample preparation steps in the packaging process, eliminating the need to make multiple pressure head molds of different specifications, and improving the efficiency of the packaging processing; and also reduces the risk of substrate oxidation that is prone to occur compared to the multi-step sintering process, solves the problem of easy breakage of thermistor PTC during the sintering process, and realizes high-reliability, low-cost synchronous sintering packaging of passive devices and chips.

[0095] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and such modifications or substitutions are intended to be within the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope of protection of the claims.

Claims

1. A method for synchronously sintering passive components and chips, characterized in that: The processing method comprises: According to the size of each passive component, a device groove is formed on the surface of the top copper layer of the copper-clad ceramic substrate; Assembling a steel mesh that matches the size of the groove at the device groove; Applying sintered silver solder material at the starting printing position of the steel mesh; the starting printing position is the outer edge of the printing area formed at the opening of the steel mesh; Use a scraper to scrape the surface of the steel mesh closely so that the sintered silver solder material is spread evenly on the surface of the printing area; Pre-baking the copper-clad ceramic substrate covered with sintered silver solder material at high temperature; Assembling passive components and chips in the mounting area corresponding to the printing area, and contacting and bonding the passive components and chips with sintered silver; The upper and lower sides of the copper-clad ceramic substrate on which the passive components and the chip are assembled are pressurized through a sintering furnace mold and sent into a high-temperature environment for sintering, so as to simultaneously sinter and fix the passive components and the chip; The scraper is used to scrape the surface of the steel mesh so that the sintered silver solder material is spread evenly on the surface of the printing area, including: The scraper moves parallel to the surface of the steel mesh at an angle of 60°; When the scraper is inserted into the L-shaped concave platform of the steel mesh, the rear end of the scraper blade moves vertically along the inner side wall of one side of the steel mesh, and the inner side wall of the steel mesh is a vertical wall surface wrapped around the side wall of the device groove; The front end of the scraper is pressed against the top surface of the L-shaped concave platform in the steel mesh and moves horizontally to scrape the surface of the sintered silver solder material flat so that the sintered silver solder material is spread flat; the scraper forms an angle of 60° with the top surface of the L-shaped concave platform; When the scraper contacts the edge of the L-shaped concave platform of the steel mesh and slides upward from the L-shaped concave platform, the direction of the scraper is adjusted to be vertical, and the side of the scraper is close to the inner side wall of the other side of the steel mesh and moves vertically; The front end of the scraper is completely slid out of the L-shaped recess in the steel mesh, and the scraper is adjusted to form a 60° angle with the surface of the steel mesh and continues to move parallel to it; Repeat the above steps until the surfaces of all printing areas are evenly covered with the sintered silver solder material.

2. The method for synchronously sintering passive components and chips according to claim 1, characterized in that: The thickness of the sintered silver solder material spread on the surface of the printing area is equal to the thickness of the steel mesh.

3. The method for synchronously sintering passive components and chips according to claim 2, characterized in that: The outer dimensions of the sintered silver solder material laid flat in the printing area are larger than the outer dimensions of the passive components and chips assembled in the chip mounting area corresponding to the printing area.

4. The method for synchronously sintering a passive component and a chip according to any one of claims 1 to 3, characterized in that: The method of assembling the passive components and the chip in the mounting area corresponding to the printing area, and contacting and bonding the passive components and the chip with sintered silver, comprises: The passive components and chips are respectively assembled in the mounting area corresponding to the printing area and subjected to a pressurization treatment so that the passive components and the chips are in contact with and bonded to the sintered silver; the pressure of the pressurization treatment is 15-35 kg / cm2; and the duration of the pressurization treatment is 0.25-5 minutes.

5. The method for synchronously sintering passive components and chips according to claim 4, characterized in that: The pressure of the upper and lower sides of the copper-clad ceramic substrate on which passive components and chips are assembled is 150-250 kg / cm2, and the pressure of the upper and lower sides of the copper-clad ceramic substrate on which passive components and chips are assembled is greater than the pressure of the pressurizing treatment.

6. The method for synchronously sintering passive components and chips according to claim 5, characterized in that: The baking temperature of the high-temperature pre-baking is lower than the temperature of sintering in a high-temperature environment.

7. A semiconductor component, characterized in that: The semiconductor component is obtained by processing using the processing method according to any one of claims 1 to 6, and the semiconductor component includes a copper-clad ceramic substrate, passive components and a chip; The copper-clad ceramic substrate includes a front copper layer, a back copper layer, and a ceramic layer sandwiched between the front copper layer and the back copper layer; A device groove is provided on the front copper layer of the copper-clad ceramic substrate; sintered silver is laid on the bottom surface of the device groove, and the passive device is adhesively fixed to the sintered silver on the bottom surface of the device groove; Sintered silver is provided between the front copper layer of the copper-clad ceramic substrate and the chip, and the chip is adhesively fixed to the sintered silver on the front copper layer; The top surface height of the chip is flush with the top surface height of the passive component.

Images