Method and device for removing molybdenum metal film layer in wafer regeneration project

Abstract

The application discloses a wafer regeneration project molybdenum metal film layer removing method and device, including the following steps S1: the wafer is placed in the first ultrasonic treatment tank with acid corrosion liquid, the mass percentage concentration of sulfuric acid in the acid corrosion liquid is 98%, and the mass percentage concentration of hydrogen peroxide is 30%; S2: the wafer after treatment is placed in the second ultrasonic treatment tank with mixed acid treatment liquid. Two different mixed acid liquids and ultrasonic equipment are used to remove the molybdenum metal film layer, better control the surface state of the silicon wafer after film removal, the substances generated by the reaction of each mixed acid liquid can be dissolved in water, the liquid medicine and the tank body are not polluted, the silicon wafer of subsequent operation is not polluted, and the silicon substrate is not excessively damaged. The whole process has small corrosion amount to the silicon substrate, improves the regeneration cleaning success rate, and stabilizes the number of silicon wafer recycling regeneration.

Description

Technical Field

[0001] This invention relates to the field of wafer regeneration technology, and in particular to a method and apparatus for removing molybdenum metal film layers in wafer regeneration projects. Background Technology

[0002] In short, wafer recycling projects refer to the process of reprocessing waste wafers or wafers that have been damaged during use through a series of processes and technologies to restore them to near the standard of new wafers, thereby achieving recycling.

[0003] Removing the molybdenum metal film layer in wafer regeneration projects is crucial. If the residual molybdenum metal film layer on the surface is not completely removed, these metal residues may adversely affect subsequent processing. For example, metal ions may diffuse into the wafer interior, affecting the electronic properties of the silicon wafer, leading to a decrease in device performance or even damage. Therefore, this application provides a method and apparatus for removing the molybdenum metal film layer in wafer regeneration projects to meet the requirements. Summary of the Invention

[0004] The purpose of this application is to provide a method and apparatus for removing molybdenum metal film in a wafer regeneration project, in order to solve the technical problems mentioned in the background above.

[0005] To achieve the above objectives, this application provides the following technical solution: a method for removing a molybdenum metal film layer in a wafer regeneration project, comprising the following steps.

[0006] S1: The wafer is placed in the first ultrasonic treatment tank containing an acidic etching solution. The acidic etching solution has a mass percentage concentration of 98% sulfuric acid and a mass percentage concentration of 30% hydrogen peroxide. The volume ratio of the components is: sulfuric acid: hydrogen peroxide: = 20:1. The mixed acidic etching solution is used to increase the corrosion rate of the metal layer and destroy the characteristics of excessive density and the inability of the chemical solution to penetrate the corrosion.

[0007] S2: The processed wafer is then placed in the second ultrasonic treatment tank, which contains a mixed acid treatment solution (the mass percentage concentration of nitric acid in the mixed acid is 70%, the mass percentage of hydrochloric acid is 30%, and the volume ratio of the components is: nitric acid: hydrochloric acid = 1:3, which is used to etch the molybdenum metal film layer on the wafer surface).

[0008] In a preferred embodiment of this invention, in S1, the temperature inside the first ultrasonic treatment tank is controlled at 120 to 150°C, and in S2, the temperature is controlled at 60° to 80°C.

[0009] In a preferred embodiment of this invention, in step S1, the ultrasonic device operates at a frequency of 26±5kHz, and in step S2, the ultrasonic device operates at a frequency of 45±5kHz.

[0010] A device for removing molybdenum metal film in a wafer regeneration project includes a processing tank with an internal electric heating tube, the upper end of the processing tank being open, and further includes a sealing plate for sealing the upper opening of the processing tank, a plate heat exchanger for heat exchange, and multiple automatic material unloading units disposed within the cavity of the processing tank.

[0011] The lower end of the sealing plate is provided with a support rack for carrying the flower basket and an electric telescopic rod for adjusting the height of the sealing plate.

[0012] The automatic discharging unit includes multiple mounting plates arranged in pairs opposite each other in the inner cavity of the processing tank. A tilting bucket is rotatably arranged between the two opposite mounting plates via a rotating shaft. The rotating shaft is eccentrically arranged with respect to the tilting bucket. A vertically arranged stop block is fixedly arranged on the rotating shaft. A first stop bar and a second stop bar are respectively arranged on the mounting plates. In the initial state, the first stop bar contacts the stop block to form a block. A liquid delivery pipe is arranged above each tilting bucket.

[0013] The plate heat exchanger is provided with a first feed pipe, a first discharge pipe, a second feed pipe equipped with a feed pump, and a second discharge pipe. The second discharge pipe is connected to a plurality of liquid delivery pipes respectively.

[0014] The processing tank is equipped with an inlet pipe and two outlet pipes. A first discharge pump and a second discharge pump are respectively installed on the two outlet pipes. The outlet end of the first discharge pump is connected to the first inlet pipe. An ultrasonic vibrating plate is installed at the bottom of the inner cavity of the processing tank.

[0015] As a preferred embodiment of this invention, an automatic shaking unit is also included, which can automatically shake the tilting bucket when the tilting bucket is rotated and tilted.

[0016] In a preferred embodiment of this invention, the automatic shaking unit includes a rotating drum rotatably mounted on the mounting plate and a mounting ring fixed on one of the mounting plates. The mounting ring is arc-shaped and has multiple protrusions spaced apart. Both ends of the rotating shaft on the same pouring bucket are slidably mounted inside the corresponding rotating drum. Both ends of the rotating shaft are provided with limiting strips, and the inner cavity of the rotating drum is provided with a matching limiting cavity. A ring plate is fixed to the left end of the rotating shaft, and a contact rod is fixed to the end of the ring plate. The end of the contact rod slides in contact with the outer wall of the mounting ring. The outer wall of the rotating drum on the right side is connected to the pouring bucket through a connecting spring.

[0017] In a preferred embodiment of this invention, when the stop block starts to contact the first stop bar and then contacts the second stop bar, the rotation angle of the stop block around the rotating axis is set to 120° to 150°. When the stop block rotates to 90°, the contact rod contacts the protrusion.

[0018] In a preferred embodiment of this invention, the height of the protrusion gradually decreases along the tilting direction of the tilting bucket.

[0019] In summary, the technical effects and advantages of this invention are as follows:

[0020] This invention has a reasonable structure and uses a combination of two different mixed acid solutions and ultrasonic equipment to remove the molybdenum metal film layer. It can better control the surface state of the silicon wafer after film removal. The substances generated by the reaction of each mixed acid solution are water-soluble and will not contaminate the solution or tank, nor will they contaminate the silicon wafers in subsequent operations. Furthermore, it will not excessively damage the silicon substrate. The corrosion of the silicon substrate in the entire process is very small, which improves the success rate of regeneration cleaning and stabilizes the number of silicon wafer regeneration cycles.

[0021] In this invention, the device uses a plate heat exchanger to exchange heat between the first mixed acid solution and the second mixed acid solution, so that the second mixed acid solution after the exchange has a certain temperature, which can reduce the power consumption of the subsequent electric heating tube and save power. At the same time, the two acid treatments are carried out in the same treatment tank, which reduces the space occupied by the device.

[0022] In this invention, an automatic shaking unit is provided, which can shake off the liquid droplets attached to the inner wall of the pouring bucket and extend the time for the pouring bucket to return to its original position, which is conducive to the complete discharge of acid from the pouring bucket.

[0023] In this invention, the height of the protrusion gradually decreases along the tilting direction of the tilting bucket, which is beneficial for the tilting bucket to rotate in the opposite direction and return to its original position. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a frontal view of a partially disassembled structure of the present invention;

[0026] Figure 2 for Figure 1 Schematic diagram of the intermediate processing tank structure;

[0027] Figure 3 for Figure 2 Schematic diagram of the automatic unloading unit;

[0028] Figure 4 for Figure 3 Diagram of the split structure;

[0029] Figure 5 for Figure 3 Side view of the mounting plate structure;

[0030] Figure 6 This is a schematic diagram of the shaft mounting location.

[0031] In the diagram: 1. Processing tank; 101. Inlet pipe; 102. Ultrasonic vibrating plate; 2. Electric telescopic rod; 3. Sealing plate; 4. Placement rack; 5. First discharge pump; 6. Second discharge pump; 7. Plate heat exchanger; 8. First discharge pipe; 9. First inlet pipe; 10. Second discharge pipe; 11. Feed pump; 12. Tilting tank; 13. Rotating shaft; 14. Stop block; 15. First stop bar; 16. Second stop bar; 17. Mounting plate; 18. Rotating drum; 19. Mounting ring; 20. Protrusion; 21. Ring plate; 22. Contact rod; 23. Limiting bar; 24. Connecting spring; 25. Delivery pipe. Detailed Implementation

[0032] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0033] Example: A method for removing a molybdenum metal film layer in a wafer regeneration project, comprising the following steps

[0034] S1: The wafer is placed in the first ultrasonic treatment tank containing an acidic etching solution. The acidic etching solution has a mass percentage concentration of 98% sulfuric acid and a mass percentage concentration of 30% hydrogen peroxide. The volume ratio of the components is: sulfuric acid: hydrogen peroxide: = 20:1. The mixed acidic etching solution is used to increase the corrosion rate of the metal layer and destroy the characteristics of excessive density and the inability of the chemical solution to penetrate the corrosion.

[0035] S2: The processed wafer is then placed in the second ultrasonic treatment tank, which contains a mixed acid treatment solution (the mass percentage concentration of nitric acid in the mixed acid is 70%, the mass percentage of hydrochloric acid is 30%, and the volume ratio of the components is: nitric acid: hydrochloric acid = 1:3, which is used to etch the molybdenum metal film layer on the wafer surface).

[0036] In step S1, concentrated sulfuric acid is a strong oxidizing agent that can oxidize many organic substances. Concentrated sulfuric acid can also react with metal oxides to produce sulfates and water, thereby removing metal oxides. Hydrogen peroxide exhibits strong oxidizing properties in acidic environments, especially when combined with concentrated sulfuric acid. It can decompose to produce oxygen and water. These oxygen bubbles can help stir the liquid, enhance the permeability of the solution, and thus better remove organic substances and oxides from the surface.

[0037] In step S2, nitric acid, a strong oxidizing agent, reacts with metals to form soluble nitrates. When corroding the molybdenum metal film, the strong oxidizing properties of nitric acid help to break down the passivation layer on the metal surface, promoting the release and dissolution of metal ions. The combined use of nitric acid and hydrochloric acid can produce a synergistic corrosion effect. The oxidizing property of nitric acid activates the metal surface, while the coordination effect of hydrochloric acid helps to remove these activated metal ions from the surface. This synergistic effect makes the mixed acid more efficient and selective in corroding the molybdenum metal film.

[0038] Throughout the process, the application of ultrasound improves the corrosion rate and cleaning effect. The substances generated by the reaction are water-soluble and will not contaminate the chemical solution or tank, nor will they contaminate the silicon wafers in subsequent operations. Furthermore, the process does not excessively damage the silicon substrate. The amount of corrosion on the silicon substrate is very small, which improves the success rate of regeneration cleaning and stabilizes the number of times the silicon wafers can be recycled.

[0039] In a preferred embodiment of this example, in S1, the internal temperature of the first ultrasonic treatment tank is controlled between 120 and 150°C. This range maintains a high reaction rate and solution permeability, reduces the risk of solution evaporation and violent reactions, and ensures the uniformity of the corrosion process, avoiding local over-corrosion or under-corrosion, thus helping to obtain a cleaner and more uniform wafer surface. In S2, the temperature is controlled between 60°C and 80°C, allowing the mixed acid to penetrate more effectively into the interior of the molybdenum metal film, thoroughly removing the film and reducing residues. At the same time, it avoids damage or over-corrosion of other materials on the wafer surface due to excessively high temperatures. This temperature control can reduce the occurrence of such side effects.

[0040] In a preferred embodiment of this invention, in step S1, the ultrasonic device operates at a frequency of 26±5 kHz. In step S2, for removing loose or easily removable contaminants such as organic matter or metal oxides from the wafer surface, low-frequency ultrasound can generate more cavitation bubbles. These cavitation bubbles release enormous energy when they burst, forming impact forces and microjets, which helps remove contaminants from the wafer surface. Low-frequency ultrasound has good penetrating power and can penetrate deep into the tiny gaps and pores on the wafer surface, improving the uniformity and thoroughness of cleaning and etching. The ultrasonic device operates at a frequency of 45±5 kHz. High-frequency ultrasound can generate finer bubbles and denser microjets, which helps refine the reaction interface between the etching solution and the molybdenum metal film, improving reaction efficiency. Although the penetrating power of high-frequency ultrasound is relatively weak, it can reduce damage to other materials on the wafer surface when removing the molybdenum metal film, ensuring the precision of cleaning and etching.

[0041] like Figure 1-6 As shown, an apparatus for removing molybdenum metal film in a wafer regeneration project includes a processing tank 1 with an electric heating tube inside. The upper end of the processing tank 1 is open. It also includes a sealing plate 3 for sealing the upper opening of the processing tank 1, a plate heat exchanger 7 for heat exchange, and multiple automatic material unloading units installed inside the processing tank 1.

[0042] The lower end of the sealing plate 3 is provided with a placement rack 4 for supporting the flower basket and an electric telescopic rod 2 for adjusting the height of the sealing plate 3;

[0043] The automatic discharging unit includes multiple mounting plates 17 arranged in pairs opposite each other in the inner cavity of the processing tank 1. A tilting bucket 12 is rotatably arranged between the two opposite mounting plates 17 via a rotating shaft 13. The rotating shaft 13 is eccentrically arranged with the tilting bucket 12. A vertically arranged stop block 14 is fixedly arranged on the rotating shaft 13. A first stop bar 15 and a second stop bar 16 are respectively arranged on the mounting plates 17. In the initial state, the first stop bar 15 contacts the stop block 14 to form a block. A liquid delivery pipe 25 is arranged above each tilting bucket 12.

[0044] The plate heat exchanger 7 is provided with a first feed pipe 9, a first discharge pipe 8, a second feed pipe equipped with a feed pump 11, and a second discharge pipe 10. The second discharge pipe 10 is connected to multiple liquid delivery pipes 25 respectively.

[0045] The treatment tank 1 is equipped with an inlet pipe 101 and two outlet pipes. A first discharge pump 5 and a second discharge pump 6 are respectively installed on the two outlet pipes. The outlet end of the first discharge pump 5 is connected to the first inlet pipe 9. An ultrasonic vibrating plate 102 is provided at the bottom of the inner cavity of the treatment tank 1.

[0046] Before use, the inlet pipe 101 (which is equipped with an electric valve) is connected to the first storage tank containing the first mixed acid solution. The first storage tank supplies acid solution to the inlet pipe 101 through the pump body. The second feed pipe (which is equipped with an electric valve) is connected to the second storage tank containing the second mixed acid solution. The outlet end of the second discharge pump 6 and the first discharge pipe 8 are both connected to the corresponding waste liquid storage tank. All electrical equipment in this device is electrically connected to the PLC controller.

[0047] During operation, the pump body delivers a certain amount of the first mixed acid solution into the processing tank 1 (so that the wafers on the basket are immersed in the acid solution). After completion, the electric valves are closed, the ultrasonic transducer 102 and the electric heating tube are activated, and the electric heating tube heats the first mixed acid solution to the set temperature and maintains the temperature. After the first mixed acid solution has treated the outer surface of the wafer, the first discharge pump 5 and the feed pump 11 are activated simultaneously to deliver the treated first mixed acid solution and the untreated second mixed acid solution to the plate heat exchanger 7 for heat exchange. After heat exchange, the first mixed acid solution is discharged from the first discharge pipe 8, while the heated second mixed acid solution is delivered to the corresponding pouring tank 12 through the liquid delivery pipe 25. As more and more acid is added to the pouring tank 12 and it rotates (the first mixed acid solution in the corresponding processing tank 1 is discharged, and the amount decreases as the discharge continues, the purpose of which is to prevent the second mixed acid solution from being discharged from the processing tank 1), the first mixed acid solution is discharged from the processing tank 1. A first mixed acid solution is mixed with a second mixed acid solution to reduce the concentration of the second mixed acid solution, thus avoiding prolonged wafer processing time. The pouring bucket 12 simultaneously pours the second mixed acid solution into the processing tank 1 by rotating. During this process, the first discharge pump 5 and the feed pump 11 stop working, all electric valves are closed, and the ultrasonic transducer 102 is controlled to work. In conjunction with the electric heating tube, the second mixed acid solution is kept at a constant temperature. After the second mixed acid solution has finished processing the wafer, it is directly discharged through the second discharge pump 6. This device uses a plate heat exchanger 7 to exchange heat between the first and second mixed acid solutions, so that the second mixed acid solution after the exchange has a certain temperature. This ensures that the heat in the first mixed acid solution after processing is fully utilized, which can reduce the power consumption of the subsequent electric heating tube and save energy. At the same time, both acid treatments are carried out in the same processing tank 1, reducing the space occupied by the device.

[0048] It is important to note the following: First, the tilting tank 12 serves as a temporary storage device. When the first mixed acid solution in the processing tank 1 is almost completely drained, the tilting tank 12 will suddenly rotate (at which point, the total amount of the second mixed acid solution stored in the multiple tilting tanks 12 has reached the value required for processing the wafer). A large amount of the second mixed acid solution is added to the processing tank 1 in a short time, submerging the wafer. This accelerates the feeding speed of the second mixed acid solution while minimizing the reduction in its concentration, thereby improving the overall working efficiency of the device. After tilting, the tilting tank 12 returns to its original position. Second, the tilting tank 12 tilts and resets due to the gravitational imbalance on both sides of the rotating shaft 13. The first baffle 15 and the second baffle 16 can prevent the tilting tank 12 from rotating excessively. Third, an elastic layer can be wrapped around the outer surface of the first baffle 15 and the baffle 14, which has a buffering effect against collisions.

[0049] As a preferred embodiment of this invention, an automatic shaking unit is also included, which can automatically drive the tilting bucket 12 to shake when it is rotating and tilting.

[0050] The purpose is to shake off the droplets adhering to the inner wall of the pouring bucket 12, which is conducive to the thorough emptying of the pouring bucket 12. At the same time, it converts some of the kinetic energy of the pouring bucket 12 when it rotates into the driving force to drive the pouring bucket 12 to shake, thereby prolonging the time for the pouring bucket 12 to return to its original position, which is conducive to the complete discharge of acid in the pouring bucket 12.

[0051] As a preferred embodiment of this example, Figure 3 and Figure 4 As shown, the automatic shaking unit includes a rotating drum 18 rotatably mounted on a mounting plate 17 and a mounting ring 19 fixed on one of the mounting plates 17. The mounting ring 19 is arc-shaped and has multiple protrusions 20 spaced apart. Both ends of the rotating shaft 13 on the same pouring bucket 12 are slidably mounted in the corresponding rotating drum 18. Both ends of the rotating shaft 13 are provided with limiting strips 23, and the inner cavity of the rotating drum 18 is provided with a limiting cavity that matches it. A ring plate 21 is fixed on the left end of the rotating shaft 13, and a contact rod 22 is fixed on the end of the ring plate 21. The end of the contact rod 22 slides in contact with the outer wall of the mounting ring 19. The outer wall of the right rotating drum 18 is connected to the pouring bucket 12 through a connecting spring 24.

[0052] When the pouring bucket 12 rotates, its contact rod 22 slides on the mounting ring 19. As the speed of the pouring bucket 12 increases, its contact rod 22 contacts the protrusion 20. The pouring bucket 12 moves to the right, compressing the connecting spring 24. When the contact rod 22 passes the protrusion 20, the elastic force of the connecting spring 24 will cause the pouring bucket 12 to return to its original position. At this time, the pouring bucket 12 moves to the left. This is repeated, which can make the pouring bucket 12 shake back and forth, which is beneficial to shake off the liquid droplets attached to the inner wall of the pouring bucket 12. At the same time, its protrusion 10 has an obstructive effect on the rotation and tilting of the pouring bucket 12 and the reverse rotation to return to its original position. The movement of the pouring bucket 12 is obstructed, reducing its speed, which is conducive to the pouring bucket 12 being in the tilting state for a longer time, increasing the pouring time of the acid, and making the acid pouring more thorough.

[0053] As a preferred embodiment of this example, Figure 5 and Figure 3 As shown, when the stop block 14 starts to contact the first stop bar 15 and then the second stop bar 16, the rotation angle of the stop block 14 around the rotating shaft 13 is set to 120° to 150°. This ensures that the pouring bucket 12 tilts fully during the pouring process, allowing all the acid to flow out smoothly. It also prevents excessive rotation angles that could cause violent collisions or damage. After the stop block 14 rotates to 90°, the contact rod 22 contacts the protrusion 20. When the stop block 14 rotates from a vertical position to a horizontal position, the pouring bucket 12 also rotates from a vertical position to a horizontal position. At this point, the acid in the pouring bucket 12 has been basically poured out (the overall weight of the pouring bucket 12 is reduced, making it easier to form continuous and rapid back-and-forth shaking, that is, to increase the frequency of back-and-forth shaking of the pouring bucket 12, which is beneficial to the shaking off of liquid droplets on the inner wall of the pouring bucket 12). Relying on the inertia of motion, it continues to rotate. At this time, the contact rod 22 contacts the protrusion 20, and the pouring bucket 12 shakes. After the contact rod 22 passes all the protrusions 20, the stop block 14 contacts the second stop bar 16 and stops moving. At this time, the pouring bucket 12 rotates in the opposite direction under its own gravity, and returns to its original position after shaking.

[0054] As a preferred embodiment of this example, the height of the protrusion 20 gradually decreases along the tilting direction of the tilting bucket 12.

[0055] When the baffle 14 contacts the second stop bar 16 and rotates in the opposite direction to return to its original position, its initial speed of reverse rotation is the slowest. If the height of the protrusion is consistent or gradually increases, the kinetic energy of the tilting bucket 12 is minimal at this time, which may prevent the contact rod 22 from passing over the protrusion 20, thus preventing the tilting bucket 12 from returning to its original position. Therefore, the height of the protrusion 20 is gradually reduced so that the tilting bucket 12 has less kinetic energy to pass over the protrusion 20 and return to its original position (as the tilting bucket 12 rotates in the opposite direction, its speed continuously increases, thus enabling it to obtain enough kinetic energy to pass over the protrusion 20).

[0056] Finally, it should be noted that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. An apparatus for removing molybdenum metal film in a wafer regeneration project, comprising a processing tank (1) with an internal electric heating tube, wherein the upper end of the processing tank (1) is open, characterized in that: It also includes a sealing plate (3) for sealing the upper opening of the processing tank (1), a plate heat exchanger (7) for heat exchange, and multiple automatic material discharge units disposed in the inner cavity of the processing tank (1). The lower end of the sealing plate (3) is provided with a placement rack (4) for supporting the flower basket and an electric telescopic rod (2) for adjusting the height of the sealing plate (3). The automatic discharging unit includes multiple mounting plates (17) arranged in pairs opposite each other in the inner cavity of the processing tank (1). A tilting bucket (12) is rotatably arranged between the two opposite mounting plates (17) via a rotating shaft (13). The rotating shaft (13) is eccentrically arranged with the tilting bucket (12). A vertically arranged stop block (14) is fixedly arranged on the rotating shaft (13). A first stop bar (15) and a second stop bar (16) are respectively arranged on the mounting plate (17). In the initial state, the first stop bar (15) contacts the stop block (14) to form a block. A liquid delivery pipe (25) is arranged above each tilting bucket (12). The plate heat exchanger (7) is provided with a first feed pipe (9), a first discharge pipe (8), a second feed pipe and a second discharge pipe (10) equipped with a feed pump (11), and the second discharge pipe (10) is connected to a plurality of liquid delivery pipes (25); The processing tank (1) is provided with an inlet pipe (101) and two outlet pipes. A first discharge pump (5) and a second discharge pump (6) are respectively installed on the two outlet pipes. The outlet end of the first discharge pump (5) is connected to the first inlet pipe (9). An ultrasonic vibrating plate (102) is provided at the bottom of the inner cavity of the processing tank (1).

2. The apparatus for removing molybdenum metal film in a wafer regeneration project according to claim 1, characterized in that: It also includes an automatic shaking unit, which can automatically shake the tilting bucket (12) when the tilting bucket (12) is rotated and tilted.

3. The apparatus for removing molybdenum metal film in a wafer regeneration project according to claim 2, characterized in that: The automatic shaking unit includes a rotating drum (18) rotatably mounted on the mounting plate (17) and a mounting ring (19) fixed on one of the mounting plates (17). The mounting ring (19) is arc-shaped and has multiple protrusions (20) spaced apart. Both ends of the rotating shaft (13) on the same pouring bucket (12) are slidably mounted in the corresponding rotating drum (18). Both ends of the rotating shaft (13) are provided with limiting strips (23), and the inner cavity of the rotating drum (18) is provided with a limiting cavity that matches it. A ring plate (21) is fixed on the left end of the rotating shaft (13), and a contact rod (22) is fixed on the end of the ring plate (21). The end of the contact rod (22) slides in contact with the outer wall of the mounting ring (19). The outer wall of the rotating drum (18) on the right side is connected to the pouring bucket (12) through a connecting spring (24).

4. The apparatus for removing molybdenum metal film in a wafer regeneration project according to claim 3, characterized in that: When the stop block (14) starts to contact the first stop bar (15) and then contacts the second stop bar (16), the rotation angle of the stop block (14) around the rotating shaft (13) is set to 120° to 150°. When the stop block (14) rotates to 90°, the contact rod (22) contacts the protrusion (20).

5. The apparatus for removing molybdenum metal film in a wafer regeneration project according to claim 4, characterized in that: As the tilting direction is rotated along the tilting bucket (12), the height of the protrusion (20) gradually decreases.

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