A method, system, storage medium and product for predicting the life of an inverter IGBT module

Abstract

The present invention relates to the field of frequency converters, and in particular to a method, system, storage medium and product for predicting the life of an IGBT module of a frequency converter; S1: obtaining the rated power of the frequency converter, and presetting the carrier frequency, maximum frequency, acceleration time, deceleration time and load type of the frequency converter; S2: importing a temperature difference life curve diagram, an IGBT module power consumption table and Tcyc data corresponding to the IGBT module according to the rated power; S3: updating Tcyc data according to the load type; S4: determining whether to execute an early warning program according to comparing the Tcyc data with a preset early warning cycle; S5: calculating a radiator temperature change value △Th; S6: calculating real-time power consumption Pi2 using a linear equation; S7: calculating a wafer junction temperature Tj of the IGBT module; S8: querying a temperature difference life curve diagram according to a total temperature difference △Tall, and determining whether to send an early warning message; thereby achieving a more intuitive response to the temperature difference change of the wafer junction temperature in applications with rapid load changes.

Description

Technical Field

[0001] The present invention relates to the field of frequency converters, and in particular to a method, system, storage medium and product for predicting the life of an IGBT module of a frequency converter. Background Art

[0002] In the prior art, the inverter IGBT module only protects the wafer junction temperature of the inverter IGBT module, or only provides maintenance warnings for a specific service life, and does not predict the service life of the inverter IGBT module.

[0003] For high-reliability applications and applications with frequent load changes, the above protection and warning for the inverter IGBT module are far from sufficient to meet actual application needs. Summary of the invention

[0004] The object of the present invention is to provide a method, system, storage medium and product for predicting the life of an IGBT module of a frequency converter, which can predict the service life and provide timely warning.

[0005] In order to achieve the above object, the present invention adopts such technical solution:

[0006] A method for predicting the life of an IGBT module of a frequency converter comprises the following steps performed in sequence:

[0007] S1: Get the rated power of the inverter, preset the carrier frequency, maximum frequency, acceleration time, deceleration time and load type of the inverter;

[0008] S2: importing the temperature difference life curve diagram, IGBT module power consumption table and Tcyc data corresponding to the IGBT module according to the rated power;

[0009] S3: When the preset load type is variable load, if the acceleration time is greater than or equal to the deceleration time, and the Tcyc data is less than or equal to the deceleration time, the Tcyc data remains unchanged.

[0010] If the acceleration time is greater than or equal to the deceleration time, and the Tcyc data is greater than the deceleration time, the deceleration time is assigned to the Tcyc data, and the Tcyc data obtains the first set value;

[0011] If the acceleration time is less than the deceleration time, and the Tcyc data is less than or equal to the acceleration time, the Tcyc data remains unchanged;

[0012] If the acceleration time is less than the deceleration time, and the Tcyc data is greater than the acceleration time, the acceleration time is assigned to the Tcyc data, and the Tcyc data obtains the second set value;

[0013] When the preset load type is constant load, the Tcyc data remains unchanged;

[0014] S4: If the Tcyc data is greater than or equal to the preset warning cycle, execute step S5; if the Tcyc data is less than the preset warning cycle and the acceleration time, deceleration time or load type is not modified, execute other inverter function programs; if the Tcyc data is less than the preset warning cycle and the acceleration time, deceleration time or load type is modified, execute step S3;

[0015] S5: If the operating life of the inverter is greater than or equal to the preset working life, a warning message is sent;

[0016] If the operating life of the inverter is less than the preset working life and a us-level high current fault has occurred, the number of high current faults is increased by 1. When the cumulative number of high current faults is greater than the preset number, a warning message is sent; when the cumulative number of high current faults is less than or equal to the preset number, and the total temperature difference △Tall is 100°C, step S8 is executed; if the operating life of the inverter is less than the preset working life and no us-level high current fault has occurred, the remaining life times value LT1 of the IGBT module, the heat sink temperature Th1 of the previous operating cycle and the heat sink temperature Th2 of the current operating cycle are read; and the heat sink temperature change value △Th is calculated using the following formula (1):

[0017] △Th=abs|Th2- Th1|(1)

[0018] S6: Obtain the real-time carrier frequency Fc, real-time output current Im and real-time output frequency Hm of the inverter, query the IGBT module power consumption table to confirm the power consumption Pi corresponding to the real-time carrier frequency Fc, the real-time output current Im and the real-time output frequency Hm, and calculate the real-time power consumption Pi2 using a linear equation;

[0019] S7: Calculate the wafer junction temperature Tj of the IGBT module using the following formula (2):

[0020] Tj = Th2 + Pi2 * Rtjh (2);

[0021] Among them, Rtjh is the total thermal resistance value of the IGBT module read in real time;

[0022] If the wafer junction temperature Tj is greater than the preset maximum junction temperature, a warning message is sent. If the wafer junction temperature Tj is less than or equal to the preset maximum junction temperature, the following formula (3) is used to calculate the wafer power difference △Pi of the IGBT module:

[0023] △Pi=abs|Pi2-Pi1|(3)

[0024] Among them, Pi1 is the real-time power consumption of the IGBT module in the last operation cycle;

[0025] The wafer temperature difference △Tjh of the IGBT module is calculated using the following formula (4):

[0026] △Tjh=△Pi*Rtjh(4);

[0027] The total temperature difference △Tall is calculated using the following formula (5):

[0028] △Tall=△Tjh+△Th(5)

[0029] S8: query the temperature difference life curve according to the total change temperature difference △Tall, determine the position of the total change temperature difference △Tall in the temperature difference life curve, and obtain the life times. If the life times are greater than 0, continue to loop and execute the above steps. If the life times are equal to 0, send a warning message.

[0030] Preferably, the preset number of times of step S5 is 1000 times.

[0031] Prioritized, us-level high current faults include hardware overcurrent and hardware short circuit.

[0032] Preferably, the position of the total change temperature difference △Tall in the temperature difference life curve is determined as follows: if the total change temperature difference △Tall is between the first value and the second value, and the first value is less than the second value, the median of the first value and the second value is used as the comparison value, if the total change temperature difference △Tall is greater than or equal to the comparison value, the number of lifespans corresponding to the second value is reduced by one, and if the total change temperature difference △Tall is less than the comparison value, the number of lifespans corresponding to the first value is reduced by one.

[0033] A frequency converter IGBT module life prediction system comprises a memory and a processor, wherein a computer program is stored in the memory, and when the computer program is executed by the processor, any of the above method steps is implemented.

[0034] A storage medium comprises a memory, wherein a computer program is stored in the memory, and when the computer program is executed by a processor, any of the method steps described above is implemented.

[0035] A computer product comprises a computer program, wherein when the computer program is executed by a processor, the computer program implements any of the above method steps.

[0036] By adopting the above-mentioned design scheme, the beneficial effects of the present invention are as follows: the present invention obtains power loss data of different module specifications under three conditions of different carriers, different currents, and different output voltages to make a table, and can perform wafer junction temperature protection according to the method of obtaining junction temperature data by looking up the table based on real-time wafer power loss; and obtains temperature difference life curves of different modules, calculates the junction temperature difference per unit time through real-time junction temperature data, real-time heat dissipation substrate data of IGBT modules and other data, and obtains the required real-time attenuation number by querying the life number data in the temperature difference life curve; flexibly corrects Tcyc in combination with acceleration and deceleration time, so as to achieve a more intuitive response to the temperature difference change of wafer junction temperature in applications with rapid load changes. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 It is the temperature difference life curve diagram of the present invention;

[0038] Figure 2 is a flow chart of steps S1-S4 of the present invention;

[0039] Figure 3 is a flow chart of steps S5-S8 of the present invention;

[0040] Figure 4 This is the power consumption table of the IGBT module of the present invention. DETAILED DESCRIPTION

[0041] In order to make the purpose, technical scheme and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only partial embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0042] A method for predicting the life of an IGBT module of a frequency converter comprises the following steps performed in sequence: Figure 2 As shown,

[0043] S1: Get the rated power of the inverter, preset the carrier frequency, maximum frequency, acceleration time, deceleration time and load type of the inverter;

[0044] S2: According to the rated power, Figure 1 The temperature difference life curve corresponding to the IGBT module shown in the figure is as follows: Figure 4 IGBT module power consumption table and Tcyc data shown;

[0045] S3: When the preset load type is variable load, if the acceleration time is greater than or equal to the deceleration time, and the Tcyc data is less than or equal to the deceleration time, the Tcyc data remains unchanged.

[0046] If the acceleration time is greater than or equal to the deceleration time, and the Tcyc data is greater than the deceleration time, the deceleration time is assigned to the Tcyc data, and the Tcyc data obtains the first set value;

[0047] If the acceleration time is less than the deceleration time, and the Tcyc data is less than or equal to the acceleration time, the Tcyc data remains unchanged;

[0048] If the acceleration time is less than the deceleration time, and the Tcyc data is greater than the acceleration time, the acceleration time is assigned to the Tcyc data, and the Tcyc data obtains the second set value;

[0049] When the preset load type is constant load, the Tcyc data remains unchanged;

[0050] S4: If the Tcyc data is greater than or equal to the preset warning cycle, execute step S5; if the Tcyc data is less than the preset warning cycle and the acceleration time, deceleration time or load type is not modified, execute other inverter function programs; if the Tcyc data is less than the preset warning cycle and the acceleration time, deceleration time or load type is modified, execute step S3;

[0051] like Figure 3 As shown, S5: if the operating life of the inverter is greater than or equal to the preset working life, a warning message is sent;

[0052] If the operating life of the inverter is less than the preset working life and a us-level high current fault has occurred, the number of high current fault occurrences is increased by 1. When the cumulative number of high current fault occurrences is greater than the preset number, a warning message is sent; when the cumulative number of high current fault occurrences is less than or equal to the preset number, and the total temperature difference △Tall is 100°C, step S8 is executed; in this embodiment, us-level high current faults include hardware overcurrent and hardware short circuit, and the preset number is 1000 times.

[0053] If the inverter's operating life is less than the preset working life and no us-level high current fault has occurred, the remaining life times value LT1 of the IGBT module, the heat sink temperature Th1 of the previous operating cycle, and the heat sink temperature Th2 of the current operating cycle are read; and the heat sink temperature change value △Th is calculated using the following formula (1):

[0054] △Th=abs|Th2- Th1|(1)

[0055] S6: Obtain the real-time carrier frequency Fc, real-time output current Im and real-time output frequency Hm of the inverter, query the IGBT module power consumption table to confirm the power consumption Pi corresponding to the real-time carrier frequency Fc, the real-time output current Im and the real-time output frequency Hm, and calculate the real-time power consumption Pi2 using a linear equation;

[0056] S7: Calculate the wafer junction temperature Tj of the IGBT module using the following formula (2):

[0057] Tj = Th2 + Pi2 * Rtjh (2);

[0058] Among them, Rtjh is the total thermal resistance value of the IGBT module read in real time;

[0059] If the wafer junction temperature Tj is greater than the preset maximum junction temperature, a warning message is sent. If the wafer junction temperature Tj is less than or equal to the preset maximum junction temperature, the following formula (3) is used to calculate the wafer power difference △Pi of the IGBT module:

[0060] △Pi=abs|Pi2-Pi1|(3)

[0061] Among them, Pi1 is the real-time power consumption of the IGBT module in the last operation cycle;

[0062] The wafer temperature difference △Tjh of the IGBT module is calculated using the following formula (4):

[0063] △Tjh=△Pi*Rtjh(4);

[0064] The total temperature difference △Tall is calculated using the following formula (5):

[0065] △Tall=△Tjh+△Th(5)

[0066] S8: query the temperature difference life curve according to the total change temperature difference △Tall, determine the position of the total change temperature difference △Tall in the temperature difference life curve, and obtain the life times; if the life times is greater than 0, continue to loop and execute the above steps, if the life times is equal to 0, send a warning message.

[0067] In this embodiment, the method for determining the position of the total change temperature difference △Tall in the temperature difference life curve is as follows: if the total change temperature difference △Tall is between the first value and the second value, and the first value is less than the second value, the median of the first value and the second value is used as the comparison value, if the total change temperature difference △Tall is greater than or equal to the comparison value, the life number corresponding to the second value is reduced by one, and if the total change temperature difference △Tall is less than the comparison value, the life number corresponding to the first value is reduced by one.

[0068] In this embodiment, the following embodiment is provided to illustrate a method for predicting the life of an IGBT module of a constant load inverter.

[0069] Set the rated power of the inverter to 5.5kW, the carrier frequency to 6kHz, the acceleration time to 5 seconds, the deceleration time to 5 seconds, and the load type to constant load.

[0070] The module temperature difference life curve data shown in Table 1 and the module power consumption data shown in Table 2 are used.

[0071] Table 1 Module temperature difference life curve data table

[0072]

[0073] Table 2 Module power consumption data table

[0074]

[0075] There are too many data involved in Table 1 and Table 2, so only the data required for this embodiment are shown.

[0076] Set Tcyc = 5 seconds, and the preset warning cycle is also 5 seconds. The inverter starts running. After running, the inverter determines the load type and determines that it is a constant load type. Tcyc is not modified and is executed according to the calculation cycle time of Tcyc = 5 seconds. When the execution cycle of 5 seconds is reached, the inverter runs the IGBT module life prediction warning program.

[0077] After entering the IGBT module life prediction and warning program, determine whether the total operating time of the inverter has exceeded Y years, such as 10 years. If it is greater than or equal to Y years, execute the non-stop operation prompt warning information processing program; if it has not exceeded Y years, continue to the next step to determine whether there is a high current fault.

[0078] If a high current fault occurs, the number of high current occurrences is increased by 1, and it is determined whether the number of high current occurrences is greater than or equal to 1000 times. If it is exceeded, the warning information processing program is executed without stopping the operation; if it is not exceeded, the total temperature difference ΔTall is assigned to 100℃(K), and then the number of cycles can be obtained by looking up Table 1 according to ΔTall, for example, the initial value is 50000 times, and then this 50000 times is reduced by 1 to get 49999 times. Then the operation of the IGBT module life prediction and warning subroutine is terminated and returned to the main program.

[0079] When the running time does not exceed the lifespan and there is no high current fault, read the data of the number of cycles in Table 1 for backup, read the last recorded radiator temperature Th1, in this case Th1=70℃, read the current radiator temperature Th2, due to the constant load, the radiator temperature does not change, in this case Th2=Th1=70℃; then calculate the absolute value of the temperature change of the radiator:

[0080] ΔTh=| Th2-Th1|=70℃-70℃=0℃(K),

[0081] Then set it according to this example:

[0082] The rated power of the inverter is 5.5kW.

[0083] The inverter carrier frequency Fc = 6kHz,

[0084] The rated current of the inverter is Im=13A.

[0085] The rated output frequency of the inverter is Hm=50Hz.

[0086] The actual inverter load current, the load rate is set to 80% in this example.

[0087] So the actual output current It=Im*80%=13A*80%=10.4A,

[0088] The actual output frequency of the inverter is set to 90% in this example, so the actual output frequency Ht=Hm*90%=50Hz*90%=45Hz;

[0089] According to the above Fc, Ht, It, check the module power consumption data table 2 and get the current power consumption data Pi2=12W (watt);

[0090] The next step is to calculate the wafer junction temperature of the IGBT module. In this example, the total thermal resistance data of the IGBT module is set to Rtjh = 1.2K / W.

[0091] The wafer junction temperature of the IGBT module is Tj=Th2+Pi2*Rtjh = 70℃+12W*1.2K / W= 84.4℃;

[0092] Then determine that this temperature is less than the maximum junction temperature Tjmax. In this example, the maximum junction temperature Tjmax is set to 150°C. The next step is to calculate the module wafer power difference ΔPi. First, read the last module IGBT power consumption value Pi1. In this example, the load is constant, so the last module IGBT power consumption value Pi1=Pi2, so:

[0093] Wafer power difference ΔPi=|Pi2-Pi1|=0W,

[0094] The temperature difference of this change ΔTjh=ΔPi*Rtjh=0,

[0095] The total temperature difference ΔTall=ΔTjh+ΔTh=0,

[0096] Next, according to ΔTall, look up Table 1 and press the lowest level ΔTall=10℃(K) to find out the number of cycles is 100000000000 times. Then process the secondary data by -1, and then update the value of ΔTall=10℃(K) corresponding to Table 1 after -1. When this value is equal to 0, execute the non-stop running prompt warning information processing program. If it is not equal to 0, then end the running of the IGBT module life prediction warning subroutine and return to the main program.

[0097] In this embodiment, the following embodiment is provided to illustrate a method for predicting the life of an IGBT module of an inverter with a variable load type.

[0098] Set the rated power of the inverter to 5.5kW, the carrier frequency to 6kHz, the acceleration time to 2 seconds, the deceleration time to 2 seconds, and the load type to variable load type.

[0099] The module temperature difference life curve data shown in Table 3 and the module power consumption data shown in Table 4 are used.

[0100] Table 3 Module temperature difference life curve data table

[0101]

[0102] According to the inverter power of 5.5kW and carrier frequency of 6kHz, the following corresponding module power consumption data are selected: Table 4 Module power consumption data table

[0103]

[0104] The above table only shows the data that is needed because there is a lot of data.

[0105] Set Tcyc = 5 seconds, the inverter starts running. After running, the inverter determines the load type and determines that it is a variable load type. Then it determines whether the acceleration time is greater than or equal to the deceleration time. In this case, the acceleration time = deceleration time = 2 seconds. Then it determines that Tcyc = 5 seconds > deceleration time = 2 seconds, so Tcyc is rewritten as Tcyc = deceleration time = 2 seconds; then it is executed according to the calculation cycle time of Tcyc = 2 seconds. When the execution cycle of 2 seconds is reached, the inverter runs the IGBT module life prediction and warning program.

[0106] After entering the IGBT module life prediction and warning program, determine whether the total operating time of the inverter has exceeded Y years, such as 10 years. If it is greater than or equal to Y years, execute the non-stop operation prompt warning information processing program; if it has not exceeded Y years, continue to the next step to determine whether there is a high current fault.

[0107] If a high current fault occurs, the number of high current occurrences is increased by 1, and it is determined whether the number of high current occurrences is greater than or equal to 1000 times. If it is exceeded, the warning information processing program is executed without stopping the operation; if it is not exceeded, the total temperature difference ΔTall is assigned to 100℃(K), and then the number of cycles can be obtained by looking up Table 3 according to ΔTall, for example, the initial value is 50000 times, and then this 50000 times is reduced by 1 to get 49999 times. Then the operation of the IGBT module life prediction and warning subroutine is terminated and returned to the main program.

[0108] When the operating time does not exceed the service life and there is no high current fault, read the cycle times data in Table 3 for backup.

[0109] The load change rule set in this example is: within a period of Tcyc=2 seconds, the load of the inverter changes from 0% load factor to 100% load factor;

[0110] When the inverter load rate is 0%, the temperature of the heat sink is set to drop to Th1 = 70°C - 2°C = 68°C;

[0111] When the inverter load rate is 100%, the temperature of the heat sink is set to rise, Th2 = 70℃ + 2℃ = 72℃;

[0112] Then calculate the absolute value of the temperature change of the heat sink:

[0113] ΔTh=| Th2-Th1|=72℃-68℃=4℃(K),

[0114] Then set it according to this example:

[0115] The rated power of the inverter is 5.5kW, the carrier frequency of the inverter is Fc=6kHz, the rated current of the inverter is Im=13A, and the rated output frequency of the inverter is Hm=50Hz.

[0116] In this example, when the load rate is set to 0%, Pi1=0W. In this example, when the load rate is set to 100%,

[0117] The actual output frequency is set to 100% in this example, so the actual output frequency is: Ht=Hm*100%=50Hz*100%=50Hz;

[0118] So the actual output current It=Im*100%=13A*100%=13A,

[0119] According to the above Fc, Ht, It, check the module power consumption data table 4 and get the current power consumption data: Pi2 = 15.68W (watts);

[0120] The next step is to calculate the wafer junction temperature of the IGBT module. In this example, the total thermal resistance data of the IGBT module is set to Rtjh = 1.2K / W;

[0121] The wafer junction temperature of the IGBT module is Tj=Th2+Pi2*Rtjh = 72℃+15.68W*1.2K / W= 90.82℃;

[0122] Then determine whether this temperature is less than the maximum junction temperature Tjmax. In this example, the maximum junction temperature Tjmax is set to 150°C.

[0123] The next step is to calculate the module wafer electrical power difference ΔPi, so:

[0124] Wafer power difference ΔPi=|Pi2=Pi1|=15.68W,

[0125] The temperature difference of this change ΔTjh=ΔPi*Rtjh= 18.82℃(K),

[0126] The total temperature difference ΔTall = ΔTjh + ΔTh = 18.82°C (K) + 4°C (K) = 22.82°C (K),

[0127] Next, according to ΔTall, look up Table 3, and 22.82℃(K) is between 20 and 25℃(K), and is greater than (20+25) / 2=22.5℃(K), so according to the 25℃(K) level, ΔTall=25℃(K), and find that the number of cycles is 22000000 times, and then process the secondary data by -1, and then update the value of ΔTall=25℃(K) corresponding to Table 1 with the value 21999999 after -1. When this value is equal to 0, execute the non-stop running prompt warning information processing program. If it is not equal to 0, then end the running of the IGBT module life prediction warning subroutine and return to the main program.

[0128] In this embodiment, a system for implementing the above method is also provided.

[0129] A frequency converter IGBT module life prediction system comprises a memory and a processor, wherein a computer program is stored in the memory, and when the computer program is executed by the processor, any of the above method steps is implemented.

[0130] In this embodiment, a storage medium storing data capable of implementing the above method is also provided.

[0131] A storage medium comprises a memory, wherein a computer program is stored in the memory, and when the computer program is executed by a processor, any of the method steps described above is implemented.

[0132] In this embodiment, a computer product capable of implementing the above method is also provided.

[0133] A computer product comprises a computer program, wherein when the computer program is executed by a processor, the computer program implements any of the above method steps.

[0134] In summary, the present invention obtains power loss data of different module specifications under different carrier, different current and different output voltage conditions and makes a table. The method of obtaining junction temperature data according to the real-time wafer power loss table can be used to perform wafer junction temperature protection; and obtains temperature difference life curves of different modules, calculates the junction temperature difference per unit time through real-time junction temperature data, real-time heat dissipation substrate data of IGBT modules and other data, and obtains the required real-time attenuation number by querying the life number data in the temperature difference life curve; flexibly corrects Tcyc in combination with acceleration and deceleration time, so as to achieve a more intuitive response to the temperature difference change of wafer junction temperature in applications with rapid load changes.

[0135] The specific implementation methods described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific implementation method of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for predicting the life of an inverter IGBT module, characterized in that: The steps include the following steps: S1: Get the rated power of the inverter, preset the carrier frequency, maximum frequency, acceleration time, deceleration time and load type of the inverter; S2: importing the temperature difference life curve diagram, IGBT module power consumption table and Tcyc data corresponding to the IGBT module according to the rated power; S3: When the preset load type is variable load, if the acceleration time is greater than or equal to the deceleration time, and the Tcyc data is less than or equal to the deceleration time, the Tcyc data remains unchanged. If the acceleration time is greater than or equal to the deceleration time, and the Tcyc data is greater than the deceleration time, the deceleration time is assigned to the Tcyc data, and the Tcyc data obtains the first set value; If the acceleration time is less than the deceleration time, and the Tcyc data is less than or equal to the acceleration time, the Tcyc data remains unchanged; If the acceleration time is less than the deceleration time, and the Tcyc data is greater than the acceleration time, the acceleration time is assigned to the Tcyc data, and the Tcyc data obtains the second set value; When the preset load type is constant load, the Tcyc data remains unchanged; S4: If the Tcyc data is greater than or equal to the preset warning cycle, execute step S5; if the Tcyc data is less than the preset warning cycle and the acceleration time, deceleration time or load type is not modified, execute other inverter function programs; if the Tcyc data is less than the preset warning cycle and the acceleration time, deceleration time or load type is modified, execute step S3; S5: If the operating life of the inverter is greater than or equal to the preset working life, a warning message is sent; If the operating life of the inverter is less than the preset working life and a us-level high current fault has occurred, the number of high current faults is increased by 1. When the cumulative number of high current faults is greater than the preset number, a warning message is sent; when the cumulative number of high current faults is less than or equal to the preset number, and the total temperature difference △Tall is 100°C, step S8 is executed; if the operating life of the inverter is less than the preset working life and no us-level high current fault has occurred, the remaining life times value LT1 of the IGBT module, the heat sink temperature Th1 of the previous operating cycle and the heat sink temperature Th2 of the current operating cycle are read; and the heat sink temperature change value △Th is calculated using the following formula (1): △Th=abs|Th2- Th1|(1) S6: Obtain the real-time carrier frequency Fc, real-time output current Im and real-time output frequency Hm of the inverter, query the IGBT module power consumption table to confirm the power consumption Pi corresponding to the real-time carrier frequency Fc, the real-time output current Im and the real-time output frequency Hm, and calculate the real-time power consumption Pi2 using a linear equation; S7: Calculate the wafer junction temperature Tj of the IGBT module using the following formula (2): Tj = Th2 + Pi2 * Rtjh (2); Among them, Rtjh is the total thermal resistance value of the IGBT module read in real time; If the wafer junction temperature Tj is greater than the preset maximum junction temperature, a warning message is sent. If the wafer junction temperature Tj is less than or equal to the preset maximum junction temperature, the following formula (3) is used to calculate the wafer power difference △Pi of the IGBT module: △Pi=abs|Pi2-Pi1|(3) Among them, Pi1 is the real-time power consumption of the IGBT module in the last operation cycle; The wafer temperature difference △Tjh of the IGBT module is calculated using the following formula (4): △Tjh=△Pi*Rtjh(4); The total temperature difference △Tall is calculated using the following formula (5): △Tall=△Tjh+△Th(5) S8: query the temperature difference life curve according to the total change temperature difference △Tall, determine the position of the total change temperature difference △Tall in the temperature difference life curve, and obtain the life times; if the life times is greater than 0, continue to loop and execute the above steps, if the life times is equal to 0, send a warning message.

2. The inverter IGBT module life prediction method according to claim 1, characterized in that: The preset number of times of step S5 is 1000 times.

3. The inverter IGBT module life prediction method according to claim 1, characterized in that: us level high current faults include hardware overcurrent and hardware short circuit.

4. The inverter IGBT module life prediction method according to claim 1, characterized in that: The method for determining the position of the total change temperature difference △Tall in the temperature difference life curve is as follows: if the total change temperature difference △Tall is between the first value and the second value, and the first value is less than the second value, the median of the first value and the second value is used as the comparison value, if the total change temperature difference △Tall is greater than or equal to the comparison value, the number of lifespans corresponding to the second value is reduced by 1, and if the total change temperature difference △Tall is less than the comparison value, the number of lifespans corresponding to the first value is reduced by 1.

5. A frequency converter IGBT module life prediction system, comprising a memory and a processor, wherein a computer program is stored in the memory, characterized in that: When the computer program is executed by the processor, the method steps described in any one of claims 1 to 4 are implemented.

6. A storage medium, comprising a memory, wherein a computer program is stored in the memory, wherein: When the computer program is executed by a processor, the method steps described in any one of claims 1 to 4 are implemented.

7. A computer product, comprising a computer program, characterized in that: When the computer program is executed by a processor, the method steps described in any one of claims 1 to 4 are implemented.

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