LED light emitting element with improved light output angle and preparation method thereof

Abstract

The present application provides an LED light-emitting element with improved light-emitting angle and a preparation method thereof, wherein the LED light-emitting element comprises a light-emitting diode chip, a color conversion film and a first reflective film, wherein the color conversion film is arranged on the main light-emitting surface of the light-emitting diode chip; the first reflective film is arranged on the side wall of the color conversion film; wherein the color conversion film comprises a first transparent protective layer and a color conversion layer, wherein the first transparent protective layer has a groove, the opening direction of the groove faces the light-emitting diode chip, and the color conversion layer is accommodated in the groove. In the LED light-emitting element provided by the present application, the coating quality of the first reflective film arranged on the side wall of the color conversion film is high, which can improve the light-emitting angle and increase the intensity of the front light, and since the outer side of the color conversion layer is coated with the first transparent protective layer, the color conversion layer can be protected during the grinding process, thereby enabling the color temperature range of the LED light-emitting element to be within a normal range, thereby improving the production yield of the LED light-emitting element.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to an LED light-emitting element with improved light emission angle and a preparation method thereof. Background Art

[0002] Light Emitting Diode (LED) has the advantages of small size, long service life, energy saving and environmental protection, fast response speed and durability. It is widely used in automobiles, indoor lighting, traffic lights, display devices and other fields. It is an ideal light source to replace traditional light sources. LED light-emitting elements usually include LED chips and color conversion layers. The LED chips can generate basic light with a specific wavelength. The color conversion particles in the color conversion layer can absorb the basic light with a specific wavelength and convert it into light of other wavelengths, thereby realizing the color conversion function and achieving the purpose of adjusting the actual light color of the LED light-emitting element. LED light-emitting elements can be roughly divided into direct-insert packaging, surface mount packaging (SMD) packaging, chip on board packaging (COB) packaging and chip-scale packaging (CSP) packaging. CSP has emerged in recent years based on the development of flip-chip LED chip technology. It has the advantages of small packaging volume and large effective light-emitting area, and has broad market application prospects.

[0003] Taking the CSP LED packaging structure using flip-chip LED chips as an example, the front and side of the conventional CSP LED packaging structure emit light, which can be understood as five-sided light emission. This leads to the problem that the CSP LED packaging structure has a large light emission angle and a weak front light emission intensity, making it difficult to be used in lighting and display products that have higher precision requirements for the light emission angle and strong requirements for the front light emission intensity. In order to improve this problem, the applicant adopted the method of coating the side wall of the color conversion layer with a reflective film in its internal research and development to reduce the light emission angle and increase the front light emission, which makes the side wall coating quality a key factor affecting the light emission angle and the front light emission intensity of the CSP LED packaging structure. Furthermore, the applicant found in its internal research and development that in order to improve the side wall coating quality while ensuring the yield, it is necessary to complete the coating process by first coating the surface + side as a whole, and then remove the reflective film on the surface by grinding. The grinding error in the grinding process is inevitable, which leads to at least part of the color conversion layer being removed in the process of removing the reflective film on the front of the color conversion layer by grinding.

[0004] Based on the above internal research, the applicant found that the current color conversion layer is usually a fluorescent film or a ceramic glass fluorescent sheet. The fluorescent film is formed by uniformly mixing and curing the fluorescent powder in the transparent adhesive layer, and the ceramic glass fluorescent sheet is formed by sintering the fluorescent powder and the ceramic glass material together, which makes the fluorescent powder in the color conversion layer dispersed. When at least part of the color conversion layer is ground and removed, there will be problems such as loss of fluorescent powder in local areas and deterioration of the morphology of the light-emitting surface formed by grinding, which affect the color temperature range and product yield. This problem needs to be solved urgently. Summary of the invention

[0005] The present application provides an LED light-emitting element with improved light-emitting angle and a preparation method thereof, which can effectively solve the problem existing in the LED light-emitting element in the related art that it is difficult to reduce the light-emitting angle, increase the front light brightness, and take into account the color temperature range and yield.

[0006] In a first aspect, the present application provides an LED light-emitting element, the LED light-emitting element comprising:

[0007] Light emitting diode chips;

[0008] A color conversion film is arranged on the main light emitting surface of the light emitting diode chip;

[0009] A first reflective film, disposed on a side wall of the color conversion film;

[0010] The color conversion film includes a first transparent protective layer and a color conversion layer. The first transparent protective layer has a groove. The opening direction of the groove faces the light-emitting diode chip. The color conversion layer is accommodated in the groove.

[0011] Optionally, the thickness of the color conversion layer is the same as the depth of the groove, wherein the color conversion layer includes a substrate layer and color conversion particles dispersed in the substrate layer, the substrate layer is viscous, and the light-emitting diode chip is in direct contact with the substrate layer.

[0012] Optionally, the thickness of the color conversion layer is less than the depth of the groove, wherein the color conversion layer comprises a substrate layer and color conversion particles dispersed in the substrate layer, and the substrate layer is viscous;

[0013] Wherein, the LED light emitting element further comprises:

[0014] A support layer is arranged on a side of the color conversion layer away from the first transparent protective layer and is located in the groove, and the sum of the thickness of the support layer and the color conversion layer is the same as the depth of the groove;

[0015] The adhesive layer is arranged between the support layer and the light emitting diode chip, and the support layer is fixedly connected to the light emitting diode chip through the adhesive layer.

[0016] Optionally, the thickness of the color conversion layer is less than the depth of the groove, wherein the color conversion layer comprises a substrate layer and color conversion particles, the surface of the substrate layer facing the first transparent protective layer is embedded with the color conversion particles, and the substrate layer is non-sticky;

[0017] Wherein, the LED light emitting element further comprises:

[0018] an adhesive layer, disposed between the color conversion layer and the first transparent protective layer, the sum of the thickness of the adhesive layer and the color conversion layer being equal to the depth of the groove, and the color conversion layer being fixedly connected to the first transparent protective layer through the adhesive layer;

[0019] The bonding layer is arranged between the color conversion layer and the light emitting diode chip, and the color conversion layer is fixedly connected to the light emitting diode chip through the bonding layer.

[0020] Optionally, the color conversion particles include fluorescent powder, the material of the first transparent protective layer includes sapphire, and the base material layer and the first transparent protective layer are made of different materials.

[0021] Optionally, the LED light emitting element further includes a second reflective film, which is disposed on a side wall of the light emitting diode chip, and the second reflective film is disposed independently of the first reflective film.

[0022] Optionally, the second reflective film and the first reflective film are made of the same material.

[0023] Optionally, the light-emitting diode chip includes a base layer, a surface of the base layer facing the color conversion film is a main light-emitting surface of the light-emitting diode chip, and the second reflective film is arranged on the side wall of the base layer, wherein the side wall of the base layer is flush with the side wall of the color conversion layer.

[0024] Optionally, the light-emitting diode chip includes a base layer, the surface of the base layer facing the color conversion film is the main light-emitting surface of the light-emitting diode chip, and the second reflective film is arranged on the side wall of the base layer, wherein the side wall of the base layer is flush with the side wall of the first transparent protective layer, and the area of ​​the base layer not covered by the color conversion layer is provided with a shading portion.

[0025] In a second aspect, the present application provides a method for preparing an LED light-emitting element, the method for preparing an LED light-emitting element comprising the following steps:

[0026] The light-emitting diode chip and the color conversion film are arranged on a carrier with a UV debonding film on the surface, wherein the color conversion film comprises a first transparent protective layer and a color conversion layer, the first transparent protective layer has a groove, and the color conversion layer is accommodated in the groove;

[0027] Depositing a first reflective film on the surface of the first transparent protective layer away from the groove and each side wall, and depositing a second reflective film on the main light emitting surface and each side wall of the light emitting diode chip;

[0028] Remove the first reflective film on the surface of the first transparent protective layer away from the groove by grinding, and remove the second reflective film on the main light emitting surface of the light emitting diode chip by grinding;

[0029] The UV debonding film is removed, and the color conversion film is fixed on the main light emitting surface of the light emitting diode chip.

[0030] The present application provides an LED light-emitting element with improved light-emitting angle and a preparation method thereof. In the LED light-emitting element provided by the present application, the first reflective film arranged on the side wall of the color conversion film can improve the light-emitting angle of the LED light-emitting element, reduce the light-emitting angle, and increase the front light-emitting intensity. Moreover, since the color conversion layer in the color conversion film is accommodated in the groove of the first transparent protective layer, and the opening direction of the groove faces the light-emitting diode chip, that is, the first transparent protective layer can cover the color conversion layer. Therefore, in the process of forming the first reflective film on the side wall of the color conversion film, the first reflective film can be formed on the side wall of the first transparent protective layer. The overall coating method of depositing the first reflective film on the surface of the first transparent protective layer away from the groove and on each side wall improves the side wall coating quality, thereby ensuring the effect of improving the light output angle and increasing the front light output intensity of the first reflective film on the side wall of the color conversion film. In the subsequent process of removing the first reflective film on the surface of the first transparent protective layer away from the groove by grinding, the first transparent protective layer arranged on the outside of the color conversion film can protect the color conversion layer, thereby avoiding the loss of the color conversion layer caused by grinding, so that the color temperature range of the LED light-emitting element can be within the normal range, thereby improving the production yield of the LED light-emitting element. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0032] Figure 1 A cross-sectional schematic diagram of an LED light-emitting element provided in Example 1 of the present application.

[0033] Figure 2A schematic cross-sectional view of a light emitting diode chip provided in some embodiments of the present application.

[0034] Figure 3 A schematic flow chart of a method for preparing an LED light-emitting element provided in some embodiments of the present application.

[0035] Figure 4 A cross-sectional schematic diagram of an LED light-emitting element provided in Example 2 of the present application.

[0036] Figure 5 This is a cross-sectional schematic diagram of an LED light-emitting element provided in Example 3 of the present application.

[0037] Figure 6 A cross-sectional schematic diagram of an LED light-emitting element provided in Example 4 of the present application.

[0038] Description of reference numerals:

[0039] Light-emitting diode chip 11; main light-emitting surface Q1 of light-emitting diode chip; base layer 111; chip body 112; buffer layer X1; first type semiconductor layer X2; light-emitting layer X3; second type semiconductor layer X4; electrode layer X5; first electrode X51; second electrode X52; current spreading layer X6; ohmic contact layer X7; current blocking layer X8; color conversion film 12; first transparent protective layer 121; planar portion 1211; cofferdam portion 1212; color conversion layer 122; base material layer 1221; color conversion particles 1222; groove A1; first reflective film 13; second reflective film 14; shading layer 15; shading portion 151; light-transmitting portion 152; support layer 16; bonding layer 17; adhesion layer 18. DETAILED DESCRIPTION

[0040] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0041] The terms "first" and "second" in this document are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0042] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or mutual communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0043] The disclosure below provides many different embodiments or examples to realize the different structures of the present application. In order to simplify the disclosure of the present application, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present application. In addition, the present application can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed.

[0044] Embodiment 1

[0045] Figure 1 This is a cross-sectional schematic diagram of an LED light-emitting element provided in Example 1 of the present application. Figure 1 As shown, in the first aspect, embodiment 1 of the present application provides an LED light-emitting element with improved light-emitting angle, wherein the LED light-emitting element comprises a light-emitting diode chip 11, a color conversion film 12 and a first reflective film 13, wherein the color conversion film 12 is arranged on the main light-emitting surface Q1 of the light-emitting diode chip 11; the first reflective film 13 is arranged on the side wall of the color conversion film 12; wherein the color conversion film 12 comprises a first transparent protective layer 121 and a color conversion layer 122, wherein the first transparent protective layer 121 has a groove A1, the opening direction of the groove A1 is toward the light-emitting diode chip 11, and the color conversion layer 122 is accommodated in the groove A1.

[0046] In the LED light-emitting element provided in the present application, the first reflective film 13 arranged on the side wall of the color conversion film 12 can improve the light emission angle of the LED light-emitting element, reduce the light emission angle, and increase the front light emission intensity. In addition, since the color conversion layer 122 in the color conversion film 12 is accommodated in the groove A1 of the first transparent protective layer 121, and the opening direction of the groove A1 is toward the light-emitting diode chip 11, that is, the first transparent protective layer 121 can cover the color conversion layer 122. Therefore, in the process of forming the first reflective film 13 on the side wall of the color conversion film 12, the first reflective film 13 can be first deposited on the surface of the first transparent protective layer 121 away from the groove A1 and on each side wall. The overall coating method improves the side wall coating quality, thereby ensuring the reflection effect of the first reflective film 13 on the side wall of the color conversion film 12. In the subsequent process of removing the first reflective film 13 on the surface of the first transparent protective layer 121 away from the groove A1 by grinding, the first transparent protective layer 121 arranged on the outer side of the color conversion film 12 can protect the color conversion layer 122, thereby avoiding the problem of loss of color conversion particles 1222 caused by direct contact between color conversion particles 1222 in the color conversion layer 122 and the grinding equipment during the grinding process, thereby enabling the color temperature range of the LED light-emitting element to be within the normal range, ensuring the color rendering accuracy and stability of the LED light-emitting element, and improving the production yield of the LED light-emitting element.

[0047] In addition, since the planar portion 1211 of the first transparent protective layer 121 is arranged on the light-emitting side of the color conversion layer 122, compared with the structure in which the color conversion particles 1222 are uniformly dispersed in the color conversion film 12, more light excited by the color conversion particles 1222 can be reflected on the first reflective film 13 on the side wall of the color conversion film 12, thereby improving the narrowing effect of the light-emitting angle of the LED light-emitting element. Exemplarily, after actual testing, the actual light-emitting angle of the LED light-emitting element provided in the present application can reach below 140°, or even below 120°. It should be noted that the first transparent protective layer 121 includes a planar portion 1211 and a cofferdam portion 1212, wherein the planar portion 1211 is arranged on the side of the color conversion layer 122 away from the light-emitting diode chip 11, and the cofferdam portion 1212 is arranged around the color conversion film 12.

[0048] More importantly, the applicant discovered in internal research that the reflective effect of the first reflective film 13 on the side wall of the color conversion film 12 is also affected by the film structure of the color conversion film 12. For example, when the color conversion film 12 is a multi-layered film structure, the side wall of the color conversion film 12 is often composed of the side walls of multiple sub-film layers. Due to process errors, the side walls of two adjacent film layers often cannot be completely aligned, which will cause the side wall of the color conversion film 12 to have a step difference in the junction area of ​​the two adjacent film layers, thereby causing the reflective effect of the first reflective film 13 to deteriorate, affecting the light emitting effect of the LED light emitting element. In the LED light emitting element provided by the present application, the side wall of the first transparent protective layer 121 is the side wall of the color conversion film 12, thereby eliminating the problem of the reflective effect of the first reflective film 13 being deteriorated due to the side wall of the color conversion film 12 being composed of the side walls of multiple sub-film layers, effectively improving the light emitting efficiency of the LED light emitting element, and further enhancing the front light emitting effect of the LED light emitting element.

[0049] In some embodiments of the present application, the color conversion layer 122 in the color conversion film 12 includes a plurality of stacked sub-film layers, and the plurality of sub-film layers are disposed in the groove A1. In the LED light-emitting element provided by the present application, the side wall of the first transparent protective layer 121 is the side wall of the color conversion film 12, thereby eliminating the problem of poor reflection effect of the first reflective film 13 caused by the side wall of the color conversion layer 122 being composed of the side walls of a plurality of sub-film layers, effectively improving the light extraction efficiency of the LED light-emitting element, and further enhancing the front light extraction effect of the LED light-emitting element.

[0050] In some embodiments of the present application, the thickness of the color conversion layer 122 is the same as the depth of the groove A1, wherein the color conversion layer 122 includes a substrate layer 1221 and color conversion particles 1222 dispersed in the substrate layer 1221, the substrate layer 1221 is viscous, and the light-emitting diode chip 11 is in direct contact with the substrate layer 1221.

[0051] In the LED light-emitting element provided in the present application, since the thickness of the color conversion layer 122 is the same as the depth of the groove A1, when the color conversion film 12 is set on a horizontal supporting platform and a grinding operation is performed to remove the first reflective film 13 on the surface of the first transparent protective layer 121 away from the groove A1, the color conversion layer 122 and the first transparent protective layer 121 can jointly serve as a support surface for the color conversion film 12 to avoid the problem of damage to the cofferdam portion 1212 in the first transparent protective layer 121 due to grinding, thereby improving the reliability of the LED light-emitting element.

[0052] In addition, since the substrate layer 1221 is sticky, the substrate layer 1221 can be directly used as a medium to fix the color conversion film 12 and the light-emitting diode chip 11, thereby simplifying the film structure of the LED light-emitting element, reducing optical loss, and improving light output efficiency and front light output intensity.

[0053] In some embodiments of the present application, the adhesive substrate layer 1221 may be silicone.

[0054] In some embodiments of the present application, the light-emitting diode chip 11 can generate basic light of a specific wavelength, and the color conversion film 12 disposed on the main light-emitting surface Q1 of the light-emitting diode chip 11 can absorb the basic light of a specific wavelength and convert it into light of other wavelengths, thereby realizing a color conversion function. Exemplarily, the basic light can be a blue light in the blue light band, and the color conversion particle 1222 can be a yellow phosphor, which can absorb part of the blue light and convert it into yellow light in the yellow light band, thereby enabling the LED light-emitting element to form white light and emit; Exemplarily, the basic light can be a blue light in the blue light band, and the color conversion particle 1222 can include red quantum dots and green quantum dots, the red quantum dots can absorb part of the blue light and convert it into red light in the red light band, and the green quantum dots can absorb part of the blue light and convert it into green light in the green band, thereby enabling the LED light-emitting element to form white light and emit. Of course, in other embodiments of the present application, the light-emitting diode chip 11 may also be a chip other than a blue light LED chip, and the color conversion particles 1222 may also be a color conversion material other than yellow phosphor and red and green quantum dots.

[0055] In some embodiments of the present application, the first reflective film 13 is a metal reflective film, such as a silver reflective film, so as to utilize the high reflectivity of the silver reflective film at multiple angles to reflect the light irradiated onto the side wall of the color conversion film 12, thereby increasing the front light output of the LED light-emitting element and improving the front brightness.

[0056] In some embodiments of the present application, the first reflective film 13 is a DBR reflective film, and the first reflective film 13 includes a plurality of first oxide reflective layers and a plurality of second oxide reflective layers stacked, and the first oxide reflective layer and the second oxide reflective layer have different refractive indices. The DBR reflective film can reflect the light irradiated on each of the side surfaces of the color conversion film 12, thereby increasing the amount of light emitted from the front of the LED light-emitting element and increasing the front brightness. Moreover, since the first reflective film 13 with a multi-layer stacked structure is coated on the side wall of the color conversion film 12, the stability of the color conversion film 12 can be greatly improved, and the service life of the LED light-emitting element can be extended. Correspondingly, this puts forward higher requirements on the film forming quality of the first reflective film 13 on the side wall of the color conversion film 12, which is one of the important reasons why the applicant adopts the overall film forming of the surface + side surface first, and then grinds and removes the surface reflective film of the first transparent protective layer 121, and uses the first transparent protective layer 121 to cover the side wall of the color conversion layer 122.

[0057] In some embodiments of the present application, the light-emitting diode chip 11 is a flip-chip LED chip, and the shape of the light-emitting diode chip 11 is a hexahedron or a quasi-hexahedron, and the light-emitting diode chip 11 has five light-emitting surfaces, which are the main light-emitting surface Q1 of the light-emitting diode chip 11 and the four side surfaces of the light-emitting diode chip 11. That is, when the emitted light generated by the light-emitting diode chip 11 is emitted from the four side surfaces of the light-emitting diode chip 11, it will cause front light loss, reducing the front light intensity of the LED light-emitting element. In order to improve this problem, in some embodiments of the present application, the LED light-emitting element also includes a second reflective film 14, and the second reflective film 14 is arranged on the side wall of the light-emitting diode chip 11.

[0058] In the LED light-emitting element provided in the embodiment of the present application, the second reflective film 14 arranged on the side wall of the light-emitting diode chip 11 can reduce the outgoing light generated by the light-emitting diode chip 11 from being emitted from the side of the light-emitting diode chip 11, so that more outgoing light generated by the light-emitting diode chip 11 can be effectively utilized, thereby improving the front light output intensity and brightness of the LED light-emitting element. Under the same power conditions, the light output energy efficiency can be improved, which is beneficial to energy saving and environmental protection.

[0059] In some embodiments of the present application, the second reflective film 14 covers the side wall of the LED chip 11 to increase the reflective area of ​​the second reflective film 14 and increase the amount of light incident on the color conversion film 12. Accordingly, in order to ensure the coating quality of the second reflective film 14 on the side wall of the LED chip 11, the coating process is completed by first coating the surface and the side surface as a whole, and then the reflective film on the surface of the LED chip 11 is removed by grinding to form the second reflective film 14 covering the side wall of the LED chip 11.

[0060] In some embodiments of the present application, the second reflective film 14 and the first reflective film 13 are provided independently.

[0061] In the LED light-emitting element provided in the embodiment of the present application, the second reflective film 14 is arranged on the side wall of the light-emitting diode chip 11, and the first reflective film 13 is arranged on the side wall of the color conversion film 12. The reason why the second reflective film 14 and the first reflective film 13 are independently arranged is that the objects carrying the first reflective film 13 and the second reflective film 14 are different, which are the color conversion film 12 and the light-emitting diode chip 11 respectively. The color conversion film 12 and the light-emitting diode chip 11 are fixed by a sticky substrate layer 1221 or an adhesive layer 17, and the color conversion film 12 needs to be surface-polished to remove the reflective film on the surface. The applicant has found through internal verification that if a continuous reflective film is formed on the side wall of the LED chip 11 and the side wall of the color conversion film 12 by a one-time film forming method, in the process of removing the reflective film on the surface of the color conversion film 12, the grinding process is likely to cause the fixation failure of the sticky substrate layer 1221 or the adhesive layer 17 between the color conversion film 12 and the LED chip 11, and cause the relative position of the color conversion film 12 and the LED chip 11 to shift, affecting the light emitting effect and reducing the yield. In order to improve this problem, the present application adopts a film forming method on the side wall of the LED chip 11 and on the side wall of the color conversion film 12, respectively, to form a discontinuous, independently arranged first reflective film 13 and second reflective film 14, so as to ensure the connection stability and position matching between the color conversion film 12 and the LED chip 11, thereby ensuring the light emitting effect and yield.

[0062] In some embodiments of the present application, the second reflective film 14 and the first reflective film 13 are made of the same material.

[0063] In the LED light-emitting element provided in the embodiment of the present application, since the second reflective film 14 and the first reflective film 13 are made of the same material, the first reflective film 13 and the second reflective film 14 can be respectively prepared by the same film-forming equipment, thereby reducing the production cost.

[0064] In some embodiments of the present application, the light-emitting diode chip 11 includes a base layer 111, the surface of the base layer 111 facing the color conversion film 12 is the main light-emitting surface Q1 of the light-emitting diode chip 11, and the second reflective film 14 is arranged on the side wall of the base layer 111, wherein the side wall of the base layer 111 is flush with the side wall of the color conversion layer 122.

[0065] In the LED light-emitting element provided in the embodiment of the present application, the light-emitting diode chip 11 is a flip-chip LED chip, therefore, the base layer 111 in the light-emitting diode chip 11, that is, the main light-emitting surface Q1 of the light-emitting diode chip 11, and the size of the base layer 111 in the light-emitting diode chip 11 can be understood as the effective light-emitting area of ​​the light-emitting diode chip 11. The applicant found in internal research that when the side wall of the base layer 111 is flush with the side wall of the color conversion film 12, that is, when the side wall of the base layer 111 is flush with the side wall of the first transparent protective layer 121, since the cofferdam portion 1212 of the first transparent protective layer 121 has a certain thickness, the blue light emitted by the light-emitting diode chip 11 may be directly emitted to the outside of the LED light-emitting element through the first transparent protective layer 121 without passing through the color conversion layer 122, which will cause a blue halo to appear at the edge of the LED light-emitting element, reducing the light emission quality of the LED light-emitting element. Therefore, the present application increases the area of ​​the color conversion layer 122 by making the side wall of the base layer 111 flush with the side wall of the color conversion layer 122, so that the color conversion layer 122 can completely cover the base layer 111, thereby improving the blue halo aperture problem at the edge of the LED light-emitting element and improving the light output quality of the LED light-emitting element.

[0066] In some embodiments of the present application, the base layer 111 is a sapphire substrate.

[0067] Figure 2 A cross-sectional schematic diagram of a light emitting diode chip 11 provided in some embodiments of the present application. Figure 1 and Figure 2As shown, in some embodiments of the present application, the light-emitting diode chip 11 includes a chip body 112 and the base layer 111, and the chip body 112 is arranged on a side of the base layer 111 away from the color conversion film 12. Optionally, in the direction in which the base layer 111 is away from the color conversion film 12, the chip body 112 includes a buffer layer X1, a first type semiconductor layer X2, a light-emitting layer X3, a second type semiconductor layer X4, and an electrode layer X5 that are stacked in sequence, the first type semiconductor layer X2 is one of an N-type semiconductor layer or a P-type semiconductor layer, the second type semiconductor layer X4 is the other of a P-type semiconductor layer or an N-type semiconductor layer, and the electrode layer X5 includes a first electrode X51 and a second electrode X52, the first electrode X51 is electrically connected to the first type semiconductor layer X2, and the second electrode X52 is electrically connected to the second type semiconductor layer X4. Optionally, the chip body 112 may further include a current spreading layer X6, an ohmic contact layer X7, and a current blocking layer X8 disposed on a side of the second type semiconductor layer X4 away from the base layer 111. It should be noted that the above is only an example of the structure of the chip body 112, and the present application does not limit the specific structure of the chip body 112.

[0068] In some embodiments of the present application, the material of the first transparent protective layer 121 includes but is not limited to sapphire, silicon carbide, glass, etc.

[0069] In some embodiments of the present application, the packaging form of the LED light emitting element is CSP, but the present application does not limit the packaging form of the LED light emitting element.

[0070] In a second aspect, some embodiments of the present application provide a method for preparing an LED light-emitting element. Figure 3 A schematic diagram of a process for preparing an LED light emitting element provided in some embodiments of the present application, combined with Figures 1 to 3 As shown, the method for preparing the LED light-emitting element includes step S01, step S02, step S03 and step S04.

[0071] Step S01 includes: placing the light-emitting diode chip 11 and the color conversion film 12 on a carrier platform coated with a UV debonding film, wherein the color conversion film 12 includes a first transparent protective layer 121 and a color conversion layer 122, the first transparent protective layer 121 has a groove A1, and the color conversion layer 122 is accommodated in the groove A1.

[0072] Step S02 includes: depositing a first reflective film 13 on the surface of the first transparent protective layer 121 away from the groove A1 and each side wall, and depositing a second reflective film 14 on the main light emitting surface Q1 and each side wall of the LED chip 11 .

[0073] Step S03 includes: removing the first reflective film 13 on the surface of the first transparent protective layer 121 away from the groove A1 by grinding, and removing the second reflective film 14 on the main light emitting surface Q1 of the LED chip 11 by grinding.

[0074] Step S04 includes: removing the UV debonding film, and fixing the color conversion film 12 on the main light emitting surface Q1 of the light emitting diode chip 11 .

[0075] In the preparation method of the LED light-emitting element provided in the embodiment of the present application, in step S01, the light-emitting diode chip 11 and the color conversion film 12 are arranged on a carrier table whose surface is coated with a UV debonding film, so that the light-emitting diode chip 11 and the color conversion film 12 can be well fixed. Compared with the conventional adhesive film fixation, the fixing effect can be greatly improved to avoid the position displacement of the light-emitting diode chip 11 and the color conversion film 12 during the subsequent grinding process, and after the grinding is completed, the UV debonding film can be treated with UV light to facilitate the peeling of the light-emitting diode chip 11 and the color conversion film 12, and the peeling yield is good.

[0076] In the method for preparing an LED light-emitting element provided in an embodiment of the present application, in step S02, a first reflective film 13 is deposited on the surface of the first transparent protective layer 121 away from the groove A1 and each side wall, which can improve the film-forming quality and stability of the first reflective film 13 formed on the side wall of the color conversion film 12; a second reflective film 14 is deposited on the main light-emitting surface Q1 and each side wall of the light-emitting diode chip 11, which can improve the film-forming quality and stability of the second reflective film 14 formed on the side wall of the light-emitting diode chip 11. Optionally, the color conversion film 12 and the light-emitting diode chip 11 can be placed in a film-forming device for film-forming at the same time, that is, the film-forming process of the first reflective film 13 is carried out synchronously with the film-forming process of the second reflective film 14, so as to reduce the process steps and reduce the production cost. However, in other embodiments of the present application, the film-forming process of the first reflective film 13 and the film-forming process of the second reflective film 14 can also be carried out sequentially.

[0077] In the preparation method of the LED light-emitting element provided in the embodiment of the present application, in step S03, the first reflective film 13 on the surface of the first transparent protective layer 121 away from the groove A1 is removed by grinding, so that the complete first reflective film 13 can be retained on the side wall of the color conversion film 12, so that the first reflective film 13 covers the side wall of the color conversion film 12, thereby reducing the light emission angle of the subsequently formed LED light-emitting element and improving the front light emission intensity; the second reflective film 14 on the main light emission surface Q1 of the light-emitting diode chip 11 is removed by grinding, so that the complete second reflective film 14 can be retained on the side wall of the light-emitting diode chip 11, so that the second reflective film 14 covers the side wall of the light-emitting diode chip 11, so as to improve the problem of light leakage caused by the side light emission of the light-emitting diode chip 11, and can effectively increase the front light emission amount, and improve the front light emission efficiency and brightness. Furthermore, since the outer side of the color conversion layer 122 in the color conversion film 12 is coated with the first transparent protective layer 121, the color conversion layer 122 can be protected by the first transparent protective layer 121 to prevent the color conversion particles 1222 in the color conversion layer 122 from being ground away during the grinding process, thereby ensuring the color rendering accuracy of the LED light-emitting element, better controlling the color temperature range, and improving the product yield.

[0078] In the preparation method of the LED light-emitting element provided in the embodiment of the present application, in step S04, the UV debonding film is removed and the color conversion film 12 is fixed on the main light-emitting surface Q1 of the light-emitting diode chip 11 to form an LED light-emitting element in combination, and the color conversion film 12 is used to convert the color of the emitted light of the light-emitting diode chip 11 and narrow the emission angle, thereby forming an emitted white light with a small emission angle and high front emission intensity.

[0079] In some embodiments of the present application, step S01 includes: placing the light-emitting diode chip 11 and the color conversion film 12 on a carrier coated with a UV debonding film, wherein the color conversion film 12 includes a first transparent protective layer 121 and a color conversion layer 122, the first transparent protective layer 121 has a groove A1, the color conversion layer 122 is accommodated in the groove A1, the color conversion layer 122 is arranged on the side of the first transparent protective layer 121 facing the UV debonding film, and the color conversion layer 122 includes a substrate layer 1 221 and color conversion particles 1222 dispersed in the substrate layer 1221, the substrate layer 1221 is sticky, and a release film is provided on the side of the color conversion layer 122 facing the UV debonding film; wherein the light-emitting diode chip 11 includes a substrate layer 111 and a chip body 112, the chip body 112 is provided on the side of the substrate layer 111 facing the UV debonding film, and the orthographic projection area of ​​the color conversion layer 122 on the supporting platform is the same as the orthographic projection area of ​​the substrate layer 111 on the supporting platform.

[0080] In some embodiments of the present application, step S02 includes: placing the light-emitting diode chip 11 and the color conversion film 12 into the same film forming chamber for film forming, so as to deposit a first reflective film 13 on the surface of the first transparent protective layer 121 away from the groove A1 and each side wall, and deposit a second reflective film 14 on the main light-emitting surface Q1 and each side wall of the light-emitting diode chip 11, wherein the first reflective film 13 and the second reflective film 14 are both DBR reflective films.

[0081] In some embodiments of the present application, step S03 includes: removing the first reflective film 13 on the surface of the first transparent protective layer 121 away from the groove A1 by grinding, and removing the second reflective film 14 on the main light-emitting surface Q1 of the light-emitting diode chip 11 by grinding, wherein at least a portion of the first transparent protective layer 121 is removed, and at least a portion of the base layer 111 is removed.

[0082] In some embodiments of the present application, step S04 includes: removing the LED chip 11 and the color conversion film 12 from the UV debonding film by UV light irradiation, and removing the release film, so that the sticky substrate layer 1221 is in direct contact with the base layer 111 of the LED chip 11, and baking to fix the color conversion film 12 on the main light emitting surface Q1 of the LED chip 11.

[0083] Embodiment 2

[0084] Figure 4 This is a cross-sectional schematic diagram of an LED light-emitting element provided in Example 2 of the present application. Figure 4 As shown, Embodiment 2 of the present application provides an LED light-emitting element with improved light-emitting angle and a preparation method thereof, wherein the LED light-emitting element comprises a light-emitting diode chip 11, a color conversion film 12 and a first reflective film 13, wherein the color conversion film 12 is arranged on the main light-emitting surface Q1 of the light-emitting diode chip 11; the first reflective film 13 is arranged on the side wall of the color conversion film 12; wherein the color conversion film 12 comprises a first transparent protective layer 121 and a color conversion layer 122, wherein the first transparent protective layer 121 has a groove A1, the opening direction of the groove A1 faces the light-emitting diode chip 11, and the color conversion layer 122 is accommodated in the groove A1.

[0085] Combination Figure 3 and Figure 4 As shown, the preparation method of the LED light-emitting element includes: step 01: placing a light-emitting diode chip 11 and a color conversion film 12 on a carrier with a UV debonding film coated on the surface, wherein the color conversion film 12 includes a first transparent protective layer 121 and a color conversion layer 122, the first transparent protective layer 121 has a groove A1, and the color conversion layer 122 is accommodated in the groove A1; step S02: depositing a first reflective film 13 on the surface of the first transparent protective layer 121 away from the groove A1 and each side wall, and depositing a second reflective film 14 on the main light-emitting surface Q1 and each side wall of the light-emitting diode chip 11; step S03: removing the first reflective film 13 on the surface of the first transparent protective layer 121 away from the groove A1 by grinding, and removing the second reflective film 14 on the main light-emitting surface Q1 of the light-emitting diode chip 11 by grinding; step S04: removing the UV debonding film, and fixing the color conversion film 12 on the main light-emitting surface Q1 of the light-emitting diode chip 11.

[0086] It should be noted that the LED light-emitting element and the preparation method thereof provided in the second embodiment of the present application are similar to the LED light-emitting element and the preparation method thereof provided in the first embodiment of the present application, and the same parts will not be repeated in the second embodiment of the present application.

[0087] In some embodiments of the present application, the light-emitting diode chip 11 includes a base layer 111, the surface of the base layer 111 facing the color conversion film 12 is the main light-emitting surface Q1 of the light-emitting diode chip 11, and the second reflective film 14 is arranged on the side wall of the base layer 111, wherein the side wall of the base layer 111 is flush with the side wall of the first transparent protective layer 121, and the area of ​​the base layer 111 not covered by the color conversion layer 122 is provided with a shading portion 151.

[0088] In the LED light-emitting element provided in the embodiment of the present application, since the side wall of the base layer 111 is flush with the side wall of the first transparent protective layer 121, the outer contour of the LED light-emitting element can be made more regular, which is beneficial to improve the packaging quality of the LED light-emitting element. In addition, since the area of ​​the base layer 111 not covered by the color conversion layer 122 is provided with a shading portion 151, the blue halo problem at the edge of the LED light-emitting element can be improved, and the light output quality of the LED light-emitting element can be improved.

[0089] In some embodiments of the present application, the LED light-emitting element includes a shading layer 15, and the shading layer 15 includes the shading portion 151 and the light-transmitting portion 152, and both the shading portion 151 and the light-transmitting portion 152 are sticky, and the light-emitting diode chip 11 and the color conversion film 12 are kept relatively fixed by the shading layer 15.

[0090] In some embodiments of the present application, in step S01 of the method for preparing the LED light-emitting element, the light-emitting diode chip 11 includes a base layer 111, and the orthographic projection area of ​​the base layer 111 on the support platform is the same as the orthographic projection area of ​​the first transparent protective layer 121 on the support platform.

[0091] In some embodiments of the present application, step S04 of the method for preparing the LED light-emitting element includes: removing the light-emitting diode chip 11 and the color conversion film 12 from the UV debonding film by UV light irradiation, forming a shading layer 15 and the color conversion film 12 on the base layer 111, and fixing the color conversion film 12 on the main light-emitting surface Q1 of the light-emitting diode chip 11 by the sticky shading layer 15, wherein the shading layer 15 includes the shading portion 151 and the light-transmitting portion 152, the light-transmitting portion 152 corresponds to the color conversion layer 122, and the shading portion 151 is arranged on the area of ​​the base layer 111 not covered by the color conversion layer 122.

[0092] Embodiment 3

[0093] Figure 5 This is a cross-sectional schematic diagram of an LED light-emitting element provided in Example 3 of the present application. Figure 5As shown, embodiment 3 of the present application provides an LED light-emitting element with improved light-emitting angle and a preparation method thereof, wherein the LED light-emitting element comprises a light-emitting diode chip 11, a color conversion film 12 and a first reflective film 13, wherein the color conversion film 12 is arranged on the main light-emitting surface Q1 of the light-emitting diode chip 11; the first reflective film 13 is arranged on the side wall of the color conversion film 12; wherein the color conversion film 12 comprises a first transparent protective layer 121 and a color conversion layer 122, wherein the first transparent protective layer 121 has a groove A1, the opening direction of the groove A1 faces the light-emitting diode chip 11, and the color conversion layer 122 is accommodated in the groove A1.

[0094] Combination Figure 3 and Figure 5 As shown, the preparation method of the LED light-emitting element includes: step 01: placing a light-emitting diode chip 11 and a color conversion film 12 on a carrier with a UV debonding film coated on the surface, wherein the color conversion film 12 includes a first transparent protective layer 121 and a color conversion layer 122, the first transparent protective layer 121 has a groove A1, and the color conversion layer 122 is accommodated in the groove A1; step S02: depositing a first reflective film 13 on the surface of the first transparent protective layer 121 away from the groove A1 and each side wall, and depositing a second reflective film 14 on the main light-emitting surface Q1 and each side wall of the light-emitting diode chip 11; step S03: removing the first reflective film 13 on the surface of the first transparent protective layer 121 away from the groove A1 by grinding, and removing the second reflective film 14 on the main light-emitting surface Q1 of the light-emitting diode chip 11 by grinding; step S04: removing the UV debonding film, and fixing the color conversion film 12 on the main light-emitting surface Q1 of the light-emitting diode chip 11.

[0095] It should be noted that the LED light-emitting element and the preparation method thereof provided in Example 3 of the present application are similar to the LED light-emitting elements and the preparation methods thereof provided in Example 1 and Example 2 of the present application, and Example 3 of the present application will not repeat the same parts.

[0096] In some embodiments of the present application, the thickness of the color conversion layer 122 is less than the depth of the groove A1, wherein the color conversion layer 122 includes a substrate layer 1221 and color conversion particles 1222 dispersed in the substrate layer 1221, and the substrate layer 1221 is sticky; wherein the LED light-emitting element also includes: a supporting layer 16, which is arranged on the side of the color conversion layer 122 away from the first transparent protective layer 121 and is located in the groove A1, and the sum of the thickness of the supporting layer 16 and the color conversion layer 122 is the same as the depth of the groove A1; a bonding layer 17, which is arranged between the supporting layer 16 and the light-emitting diode chip 11, and the supporting layer 16 is fixedly connected to the light-emitting diode chip 11 through the bonding layer 17.

[0097] In the LED light-emitting element provided in the embodiment of the present application, the applicant found in internal research that the adhesive substrate layer 1221 often has a certain elasticity. When the color conversion layer 122 includes the elastic substrate layer 1221, and the thickness of the color conversion layer 122 is the same as the depth of the groove A1, the support capacity of the color conversion layer 122 is difficult to guarantee, and various problems are likely to occur during the grinding process. When the color conversion layer 122 includes the elastic substrate layer 1221, the thickness of the color conversion layer 122 is difficult to achieve precise control, and there may be a problem that the color conversion layer 122 overflows the groove A1. Therefore, the applicant further sets a support layer 16 in the groove A1, which can reduce the thickness of the color conversion layer 122 on the one hand, making the overall thickness control more accurate; on the other hand, it can also effectively improve the support strength of the color conversion film 12 during the grinding process. In addition, since the support layer 16 is non-sticky, there is no need to set an additional release film. Accordingly, since the support layer 16 is non-sticky, the adhesive layer 17 needs to be additionally provided to fix the light emitting diode chip 11 and the color conversion film 12 together.

[0098] In some embodiments of the present application, the material of the support layer 16 is the same as the material of the first transparent protective layer 121 .

[0099] In some embodiments of the present application, the bonding layer 17 is the light shielding layer 15 in the second embodiment, and accordingly, the light emitting diode chip 11 includes a base layer 111, the surface of the base layer 111 facing the color conversion film 12 is the main light emitting surface Q1 of the light emitting diode chip 11, and the second reflective film 14 is arranged on the side wall of the base layer 111, wherein the side wall of the base layer 111 is flush with the side wall of the first transparent protective layer 121, and the area of ​​the base layer 111 not covered by the color conversion layer 122 is provided with a light shielding portion 151. Of course, in other embodiments of the present application, the bonding layer 17 can be a conventional transparent adhesive layer.

[0100] In some embodiments of the present application, in step S01 of the method for preparing the LED light-emitting element, the thickness of the color conversion layer 122 is less than the depth of the groove A1, wherein the color conversion layer 122 includes a substrate layer 1221 and color conversion particles 1222 dispersed in the substrate layer 1221, and the substrate layer 1221 is viscous, and the LED light-emitting element further includes: a support layer 16, which is arranged on the side of the color conversion layer 122 away from the first transparent protective layer 121 and is located in the groove A1, and the sum of the thickness of the support layer 16 and the color conversion layer 122 is the same as the depth of the groove A1. Further, the light-emitting diode chip 11 includes a substrate layer 111, and the orthographic projection area of ​​the substrate layer 111 on the support platform is the same as the orthographic projection area of ​​the first transparent protective layer 121 on the support platform.

[0101] In some embodiments of the present application, step S04 of the method for preparing the LED light-emitting element includes: removing the light-emitting diode chip 11 and the color conversion film 12 from the UV debonding film by UV light irradiation, forming an adhesive layer 17 and the color conversion film 12 on the base layer 111, and fixing the color conversion film 12 on the main light-emitting surface Q1 of the light-emitting diode chip 11 by the adhesive adhesive layer 17, wherein the adhesive layer 17 is a shading layer 15, and the shading layer 15 includes the shading portion 151 and the light-transmitting portion 152, and the light-transmitting portion 152 corresponds to the color conversion layer 122, and the shading portion 151 is arranged on the area of ​​the base layer 111 not covered by the color conversion layer 122.

[0102] Embodiment 4

[0103] Figure 6 This is a cross-sectional schematic diagram of an LED light-emitting element provided in Example 4 of the present application. Figure 6As shown, embodiment 4 of the present application provides an LED light-emitting element with improved light-emitting angle and a preparation method thereof, wherein the LED light-emitting element includes a light-emitting diode chip 11, a color conversion film 12 and a first reflective film 13, wherein the color conversion film 12 is arranged on the main light-emitting surface Q1 of the light-emitting diode chip 11; the first reflective film 13 is arranged on the side wall of the color conversion film 12; wherein the color conversion film 12 includes a first transparent protective layer 121 and a color conversion layer 122, wherein the first transparent protective layer 121 has a groove A1, the opening direction of the groove A1 is toward the light-emitting diode chip 11, and the color conversion layer 122 is accommodated in the groove A1.

[0104] Combination Figure 3 and Figure 6 As shown, the preparation method of the LED light-emitting element includes: step 01: placing a light-emitting diode chip 11 and a color conversion film 12 on a carrier with a UV debonding film coated on the surface, wherein the color conversion film 12 includes a first transparent protective layer 121 and a color conversion layer 122, the first transparent protective layer 121 has a groove A1, and the color conversion layer 122 is accommodated in the groove A1; step S02: depositing a first reflective film 13 on the surface of the first transparent protective layer 121 away from the groove A1 and each side wall, and depositing a second reflective film 14 on the main light-emitting surface Q1 and each side wall of the light-emitting diode chip 11; step S03: removing the first reflective film 13 on the surface of the first transparent protective layer 121 away from the groove A1 by grinding, and removing the second reflective film 14 on the main light-emitting surface Q1 of the light-emitting diode chip 11 by grinding; step S04: removing the UV debonding film, and fixing the color conversion film 12 on the main light-emitting surface Q1 of the light-emitting diode chip 11.

[0105] It should be noted that the LED light-emitting element and the preparation method thereof provided in the fourth embodiment of the present application are similar to the LED light-emitting elements and the preparation methods thereof provided in the first, second and third embodiments of the present application, and the fourth embodiment of the present application will not repeat the same parts.

[0106] In some embodiments of the present application, the thickness of the color conversion layer 122 is less than the depth of the groove A1, wherein the color conversion layer 122 includes a substrate layer 1221 and color conversion particles 1222, the surface of the substrate layer 1221 facing the first transparent protective layer 121 is embedded with the color conversion particles 1222, and the substrate layer 1221 is non-sticky; wherein the LED light-emitting element also includes: an adhesion layer 18, which is arranged between the color conversion layer 122 and the first transparent protective layer 121, the sum of the thickness of the adhesion layer 18 and the color conversion layer 122 is the same as the depth of the groove A1, and the color conversion layer 122 is fixedly connected to the first transparent protective layer 121 through the adhesion layer 18; and a bonding layer 17, which is arranged between the color conversion layer 122 and the light-emitting diode chip 11, and the color conversion layer 122 is fixedly connected to the light-emitting diode chip 11 through the bonding layer 17.

[0107] In the LED light-emitting element provided in the embodiment of the present application, the color conversion particles 1222 can be embedded on the surface of the substrate layer 1221 facing the first transparent protective layer 121 by sintering, thereby forming a sheet-like color conversion layer 122 with higher stability and stronger support. On this basis, since the substrate layer 1221 is non-sticky, it is necessary to additionally set an adhesive layer 18 between the color conversion layer 122 and the first transparent protective layer 121. Since the color conversion particles 1222 are no longer required in the adhesive layer 18, a transparent colloid with higher hardness and stronger support can be selected; since the sum of the thickness of the adhesive layer 18 and the color conversion layer 122 is the same as the depth of the groove A1, the stability of the color conversion film 12 during the grinding process can still be guaranteed. In addition, since the substrate layer 1221 is non-sticky, it is necessary to additionally set the bonding layer 17 to fix the light-emitting diode chip 11 and the color conversion film 12.

[0108] In some embodiments of the present application, the color conversion particles 1222 include phosphors, the material of the first transparent protective layer 121 includes sapphire, and the material of the substrate layer 1221 is different from that of the first transparent protective layer 121. The melting point of the substrate layer 1221 is lower than that of the first transparent protective layer 121. For example, the material of the substrate layer 1221 includes glass.

[0109] In some embodiments of the present application, the bonding layer 17 is the light shielding layer 15 in the second embodiment, and accordingly, the light emitting diode chip 11 includes a base layer 111, the surface of the base layer 111 facing the color conversion film 12 is the main light emitting surface Q1 of the light emitting diode chip 11, and the second reflective film 14 is arranged on the side wall of the base layer 111, wherein the side wall of the base layer 111 is flush with the side wall of the first transparent protective layer 121, and the area of ​​the base layer 111 not covered by the color conversion layer 122 is provided with a light shielding portion 151. Of course, in other embodiments of the present application, the bonding layer 17 can be a conventional transparent adhesive layer.

[0110] In some embodiments of the present application, in step S01 of the method for preparing the LED light-emitting element, the thickness of the color conversion layer 122 is less than the depth of the groove A1, wherein the color conversion layer 122 includes a substrate layer 1221 and color conversion particles 1222, the surface of the substrate layer 1221 facing the first transparent protective layer 121 is embedded with the color conversion particles 1222, and the substrate layer 1221 is non-sticky; wherein the LED light-emitting element further includes: an adhesion layer 18, which is arranged between the color conversion layer 122 and the first transparent protective layer 121, the sum of the thickness of the adhesion layer 18 and the color conversion layer 122 is the same as the depth of the groove A1, and the color conversion layer 122 is fixedly connected to the first transparent protective layer 121 through the adhesion layer 18; and a bonding layer 17, which is arranged between the color conversion layer 122 and the light-emitting diode chip 11, and the color conversion layer 122 is fixedly connected to the light-emitting diode chip 11 through the bonding layer 17. Furthermore, the light-emitting diode chip 11 includes a base layer 111 , and an orthographic projection area of ​​the base layer 111 on the carrier is the same as an orthographic projection area of ​​the first transparent protective layer 121 on the carrier.

[0111] In some embodiments of the present application, step S04 of the method for preparing the LED light-emitting element includes: removing the light-emitting diode chip 11 and the color conversion film 12 from the UV debonding film by UV light irradiation, forming an adhesive layer 17 and the color conversion film 12 on the base layer 111, and fixing the color conversion film 12 on the main light-emitting surface Q1 of the light-emitting diode chip 11 by the adhesive adhesive layer 17, wherein the adhesive layer 17 is a shading layer 15, and the shading layer 15 includes the shading portion 151 and the light-transmitting portion 152, and the light-transmitting portion 152 corresponds to the color conversion layer 122, and the shading portion 151 is arranged on the area of ​​the base layer 111 not covered by the color conversion layer 122.

[0112] In summary, the present application provides an LED light-emitting element with improved light-emitting angle and a preparation method thereof, wherein the LED light-emitting element includes a light-emitting diode chip, a color conversion film and a first reflective film, wherein the color conversion film is arranged on the main light-emitting surface of the light-emitting diode chip; the first reflective film is arranged on the side wall of the color conversion film; wherein the color conversion film includes a first transparent protective layer and a color conversion layer, wherein the first transparent protective layer has a groove, the opening direction of the groove faces the light-emitting diode chip, and the color conversion layer is accommodated in the groove. In the LED light-emitting element provided by the present application, the first reflective film arranged on the side wall of the color conversion film can improve the light-emitting angle of the LED light-emitting element, reduce the light-emitting angle, and increase the front light-emitting intensity. Moreover, since the color conversion layer in the color conversion film is accommodated in the groove of the first transparent protective layer, and the opening direction of the groove is toward the light-emitting diode chip, that is, the first transparent protective layer can cover the color conversion layer. Therefore, in the process of forming the first reflective film on the side wall of the color conversion film, an overall coating method of first depositing the first reflective film on the surface of the first transparent protective layer away from the groove and on each side wall can be adopted to improve the side wall coating quality, thereby ensuring the effect of the first reflective film on the side wall of the color conversion film on improving the light-emitting angle and increasing the front light-emitting intensity. In the subsequent process of removing the first reflective film on the surface of the first transparent protective layer away from the groove by grinding, the first transparent protective layer arranged on the outer side of the color conversion film can protect the color conversion layer, thereby avoiding the loss of the color conversion layer caused by grinding, so that the color temperature range of the LED light-emitting element can be within the normal range, thereby improving the production yield of the LED light-emitting element.

[0113] The above is a detailed introduction to an LED light-emitting element with improved light output angle and a preparation method thereof provided in an embodiment of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. An LED light emitting element, characterized in that: The LED light emitting element comprises: Light emitting diode chips; A color conversion film is arranged on the main light emitting surface of the light emitting diode chip; The first reflective film disposed on the side wall of the color conversion film comprises a plurality of first oxide reflective layers and a plurality of second oxide reflective layers stacked and arranged, the first oxide reflective layers and the second oxide reflective layers have different refractive indices, and the first reflective film disposed on the side wall of the color conversion film is prepared by the following steps: depositing the first reflective film on the surface of the first transparent protective layer away from the groove and each side wall; removing the first reflective film on the surface of the first transparent protective layer away from the groove by grinding to form the first reflective film disposed on the side wall of the color conversion film; The color conversion film comprises a first transparent protective layer and a color conversion layer, the first transparent protective layer has a groove, the opening direction of the groove faces the light-emitting diode chip, and the color conversion layer is accommodated in the groove; Wherein, the side wall of the color conversion film is the side wall of the first transparent protective layer, and the first transparent protective layer has an integrated structure; Wherein, the LED light emitting element further includes a second reflective film, the second reflective film is arranged on the side wall of the light emitting diode chip, and the second reflective film is arranged independently of the first reflective film.

2. The LED light emitting element according to claim 1, characterized in that: The thickness of the color conversion layer is the same as the depth of the groove, wherein the color conversion layer includes a substrate layer and color conversion particles dispersed in the substrate layer, the substrate layer is viscous, and the light emitting diode chip is in direct contact with the substrate layer.

3. The LED light emitting element according to claim 1, characterized in that: The thickness of the color conversion layer is smaller than the depth of the groove, wherein the color conversion layer comprises a substrate layer and color conversion particles dispersed in the substrate layer, and the substrate layer is viscous; Wherein, the LED light emitting element further comprises: A support layer is arranged on a side of the color conversion layer away from the first transparent protective layer and is located in the groove, and the sum of the thickness of the support layer and the color conversion layer is the same as the depth of the groove; The adhesive layer is arranged between the support layer and the light emitting diode chip, and the support layer is fixedly connected to the light emitting diode chip through the adhesive layer.

4. The LED light emitting element according to claim 1, characterized in that: The thickness of the color conversion layer is less than the depth of the groove, wherein the color conversion layer comprises a substrate layer and color conversion particles, the surface of the substrate layer facing the first transparent protective layer is embedded with the color conversion particles, and the substrate layer is non-sticky; Wherein, the LED light emitting element further comprises: an adhesive layer, disposed between the color conversion layer and the first transparent protective layer, the sum of the thickness of the adhesive layer and the color conversion layer being equal to the depth of the groove, and the color conversion layer being fixedly connected to the first transparent protective layer through the adhesive layer; The bonding layer is arranged between the color conversion layer and the light emitting diode chip, and the color conversion layer is fixedly connected to the light emitting diode chip through the bonding layer.

5. The LED light emitting element according to claim 4, characterized in that: The color conversion particles include fluorescent powder, the material of the first transparent protective layer includes sapphire, and the base material layer and the first transparent protective layer are made of different materials.

6. The LED light emitting element according to claim 1, characterized in that: The second reflective film is made of the same material as the first reflective film.

7. The LED light emitting element according to claim 1, characterized in that: The light-emitting diode chip comprises a base layer, a surface of the base layer facing the color conversion film is a main light-emitting surface of the light-emitting diode chip, and the second reflective film is arranged on the side wall of the base layer, wherein the side wall of the base layer is flush with the side wall of the color conversion layer.

8. The LED light emitting element according to claim 1, characterized in that: The light-emitting diode chip includes a base layer, a surface of the base layer facing the color conversion film is a main light-emitting surface of the light-emitting diode chip, and the second reflective film is arranged on the side wall of the base layer, wherein the side wall of the base layer is flush with the side wall of the first transparent protective layer, and a shading portion is arranged in the area of ​​the base layer not covered by the color conversion layer.

9. A method for preparing an LED light-emitting element, characterized in that: The method for preparing the LED light emitting element comprises the following steps: The light-emitting diode chip and the color conversion film are arranged on a carrier with a UV debonding film on the surface, wherein the color conversion film comprises a first transparent protective layer and a color conversion layer, the first transparent protective layer has a groove, and the color conversion layer is accommodated in the groove; Depositing a first reflective film on the surface of the first transparent protective layer away from the groove and each side wall, and depositing a second reflective film on the main light emitting surface and each side wall of the light emitting diode chip; Remove the first reflective film on the surface of the first transparent protective layer away from the groove by grinding, and remove the second reflective film on the main light emitting surface of the light emitting diode chip by grinding; Remove the UV debonding film and fix the color conversion film on the main light emitting surface of the light emitting diode chip; The first reflective film includes a plurality of first oxide reflective layers and a plurality of second oxide reflective layers stacked in layers, and the first oxide reflective layers and the second oxide reflective layers have different refractive indices; The side wall of the color conversion film is the side wall of the first transparent protective layer, and the first transparent protective layer has an integrated structure; the second reflective film and the first reflective film are independently arranged.

Images