Automatic doping control method and system for trench Schottky diode manufacturing

Abstract

The present invention discloses an automatic doping control method and system for manufacturing trench Schottky diodes, and relates to the field of semiconductor manufacturing technology. The method comprises: by identifying the trench structure characteristics of the Schottky diode and obtaining the corresponding efficiency requirements, the doping concentration distribution requirements are parsed. Then, the doping process is simulated through the simulation space to obtain relevant process parameters and doping evaluation results, and the stable structure and risk deviation structure are extracted. These risk deviation structures are optimized to obtain the optimal doping parameters. Finally, the stable structure and the optimized doping parameters are integrated to generate control parameters for controlling the doping process. The technical problem that the electrical performance requirements of different regions in the manufacturing process of the trench Schottky diode in the prior art cannot be accurately met is solved, and the key electrical properties of the Schottky diode are accurately regulated.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to an automatic doping control method and system for manufacturing trench Schottky diodes. Background Art

[0002] In the process of semiconductor device manufacturing, Schottky diodes are widely used in high-frequency and power management fields due to their low on-state voltage and fast switching characteristics. In order to improve the electrical properties of Schottky diodes, such as on-resistance, reverse leakage current, breakdown voltage, etc., it is usually necessary to accurately control the structure and doping concentration of the diode. However, in the prior art, the doping process often has problems such as uneven concentration distribution and unstable process parameters, which leads to the electrical performance of the diode not meeting expectations and even affects the reliability of the device. In addition, due to the different requirements for electrical performance in different regions, how to dynamically adjust the doping concentration during the manufacturing process has become a key technical problem affecting device performance.

[0003] In the current related technologies, there is a technical problem that the electrical performance requirements of different regions in the manufacturing process of trench Schottky diodes cannot be accurately met. Summary of the invention

[0004] This application provides an automatic doping control method and system for the manufacture of trench Schottky diodes. It uses the method of identifying the trench structure characteristics (including shape, depth and spacing) of the Schottky diode and obtaining the corresponding efficiency requirements to parse the doping concentration distribution requirements. Then, the doping process is simulated in the simulation space to obtain the relevant process parameters and doping evaluation results, and the stable structure and risk deviation structure are extracted. These risk deviation structures are optimized to obtain the optimal doping parameters. Finally, the stable structure and the optimized doping parameters are integrated to generate control parameters for controlling the doping process, thereby achieving the technical effect of accurately regulating the key electrical properties of the Schottky diode and improving the device performance and stability of the manufacturing process.

[0005] The present application provides an automatic doping control method for manufacturing a trench Schottky diode, comprising:

[0006] The trench structure of the Schottky diode is obtained, and the shape, depth, and spacing characteristics of the trench structure are identified and extracted to obtain the trench structure characteristics; the efficiency requirements are obtained, and the doping concentration distribution parameters of the trench structure characteristics are analyzed according to the efficiency requirements to obtain the doping concentration distribution requirements; parameter simulation is performed on the doping process means through the simulation space to obtain the process parameters and doping evaluation results of the trench structure characteristics, and a stable trench structure, a risk deviation structure and its corresponding process parameters are extracted based on the doping evaluation results; with the doping concentration distribution requirements as the target, the risk deviation structure and its process parameters are optimized and searched based on the simulation space to obtain the optimal doping parameters; the stable trench structure and its corresponding process parameters are integrated with the optimal doping parameters according to the trench structure characteristics to generate doping control parameters.

[0007] The present application also provides an automatic doping control system for manufacturing trench Schottky diodes, including: a trench structure acquisition module, the trench structure acquisition module is used to acquire the trench structure of the Schottky diode, and perform shape, depth, and spacing feature recognition and extraction on the trench structure to obtain the trench structure characteristics; a doping concentration distribution requirement acquisition module, the doping concentration distribution requirement acquisition module is used to acquire the efficacy requirements, and perform doping concentration distribution parameter analysis on the trench structure characteristics according to the efficacy requirements to obtain the doping concentration distribution requirements; a parameter simulation module, the parameter simulation module is used to perform parameter simulation on the doping process means through the simulation space, obtain the process parameters and doping evaluation results of the trench structure characteristics, and extract the stable trench structure, risk deviation structure and its corresponding process parameters based on the doping evaluation results; an optimization search module, the optimization search module is used to optimize the risk deviation structure and its process parameters based on the simulation space with the doping concentration distribution requirements as the target, and obtain the optimal doping parameters; a doping control parameter generation module, the doping control parameter generation module is used to integrate the parameters of the stable trench structure and its corresponding process parameters with the optimal doping parameters according to the trench structure characteristics to generate doping control parameters.

[0008] The automatic doping control method and system for trench Schottky diode manufacturing proposed in this application first identifies the trench structure characteristics (including shape, depth and spacing) of the Schottky diode and obtains the corresponding efficiency requirements to parse the doping concentration distribution requirements. Then, the doping process is simulated in the simulation space to obtain the relevant process parameters and doping evaluation results, and the stable structure and risk deviation structure are extracted. These risk deviation structures are optimized to obtain the optimal doping parameters. Finally, the stable structure and the optimized doping parameters are integrated to generate the control parameters for controlling the doping process, so as to achieve the technical effect of accurately regulating the key electrical properties of the Schottky diode and improving the device performance and stability of the manufacturing process. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] In order to more clearly illustrate the technical solution of the embodiment of the present invention, the accompanying drawings of the embodiment of the present invention will be briefly introduced below. A flow chart is used in the present application to illustrate the operations performed by the system according to the embodiment of the present application. It should be understood that the preceding or following operations are not necessarily performed accurately in order. On the contrary, various steps can be processed in reverse order or simultaneously as needed. At the same time, other operations can also be added to these processes, or one or more operations can be removed from these processes.

[0010] Figure 1 A schematic flow chart of an automatic doping control method for manufacturing a trench Schottky diode provided in an embodiment of the present application;

[0011] Figure 2 A schematic diagram of the structure of an automatic doping control system for manufacturing trench Schottky diodes provided in an embodiment of the present application.

[0012] Explanation of reference numerals: trench structure acquisition module 10 , doping concentration distribution requirement acquisition module 20 , parameter simulation module 30 , optimization search module 40 , doping control parameter generation module 50 . DETAILED DESCRIPTION

[0013] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below.

[0014] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings. The described embodiments should not be regarded as limiting the present application. All other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of this application.

[0015] In the following description, reference is made to "some embodiments", which describe a subset of all possible embodiments, but it is understood that "some embodiments" may be the same subset or different subsets of all possible embodiments, and may be combined with each other without conflict, and the terms "first\second" involved are merely to distinguish similar objects and do not represent a specific ordering of objects. The terms "including" and "having" and any variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product, or server that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or modules that are not clearly listed or inherent to these processes, methods, products, or devices. Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by technicians in the technical field of this application. The terms used herein are for the purpose of describing the embodiments of the present application only.

[0016] The present application provides an automatic doping control method for manufacturing a trench Schottky diode. Figure 1 As shown, the method includes:

[0017] Step S100, obtain the trench structure of the Schottky diode, identify and extract the shape, depth, and spacing features of the trench structure, and obtain the trench structure features. Specifically, after obtaining the trench structure of the Schottky diode, information is obtained through physical observation and data analysis. Then, image recognition technology and feature extraction algorithms are used to identify and extract shape features, optical and electrical measurement methods are used to determine depth features, and image analysis and statistical analysis are used to identify and extract spacing features, so as to accurately obtain the shape, depth, spacing and other feature information of the Schottky diode trench structure, and provide basic data for subsequent doping concentration distribution demand analysis and automatic doping control.

[0018] Step S200, obtain the efficiency requirements, and analyze the doping concentration distribution parameters of the groove structure characteristics according to the efficiency requirements to obtain the doping concentration distribution requirements. Specifically, first clarify the efficiency requirements of the Schottky diode, including performance indicators such as on-resistance, reverse leakage current, breakdown voltage, switching speed, and analyze the application scenarios. Then analyze the efficiency parameters and quantify the electrical performance requirements, and then derive the mapping function relationship between the doping concentration and the electrical performance based on the semiconductor physics theory and verify it through experiments. Use this relationship to calculate the doping requirement concentration and optimize it considering the actual situation. Finally, segment according to the groove structure characteristics, establish the influence relationship between the electrical performance data of the structure and the doping concentration, determine the longitudinal and lateral doping gradient requirements, and then obtain the doping concentration distribution requirements according to the efficiency requirements, and provide goals and guidance for automatic doping control.

[0019] In a possible implementation, the efficiency requirement is obtained, and the doping concentration distribution parameters of the groove structure characteristics are analyzed according to the efficiency requirement to obtain the doping concentration distribution requirement. Step S200 further includes step S210, and the electrical performance requirements are quantified according to the various efficiency parameters of the efficiency requirement, and the efficiency requirements include on-resistance, reverse leakage current, breakdown voltage, and switching speed. Specifically, the electrical performance requirements are quantified, and the efficiency requirements include on-resistance, reverse leakage current, breakdown voltage, and switching speed. First, the efficiency requirement target of the on-resistance is clarified to be in the range of 0.1-0.5Ω to ensure low conduction loss. The Schottky diodes in different application scenarios are analyzed, and the required upper and lower limits of the on-resistance are determined according to the specific circuit design and power requirements, and it is used as one of the quantified electrical performance requirements; the reverse leakage current must be kept low under reverse bias and set to the order of <1μA or 10μA. According to the application environment of the diode and the requirements for reliability, the maximum acceptable reverse leakage current is determined, so as to achieve reverse leakage current. The breakdown voltage refers to the maximum voltage that the device can withstand under reverse bias. The goal is usually to achieve a high breakdown voltage such as 200V, 600V, etc. The specific value is determined according to the application requirements. According to different operating voltage requirements and safety margin considerations, the required breakdown voltage quantification value is determined to ensure that the diode will not be broken down by excessive reverse voltage during operation; the switching speed is related to the parasitic capacitance and current path resistance. The nanosecond (ns) or microsecond (μs) response time target must be considered when quantifying. According to the operating frequency of the circuit and the demand for fast switching, the appropriate switching speed quantification range is determined to meet the system's requirements for the diode switching performance.

[0020] Step S220, obtaining a mapping function relationship between doping concentration and electrical performance. Specifically, based on semiconductor physics theory, the influence mechanism of doping concentration on the electrical performance of Schottky diodes is analyzed, the relationship between factors such as carrier concentration and mobility and doping concentration is considered, and how these factors affect electrical performance indicators such as on-resistance, reverse leakage current, breakdown voltage and switching speed, and a preliminary relationship model between doping concentration and various electrical performance indicators is established through theoretical deduction. For example, according to the relationship formula between carrier concentration and doping concentration, (in is the carrier concentration, is the doping concentration), and the empirical formula of carrier mobility and doping concentration (in is the carrier mobility, and is the empirical coefficient), the relationship between on-resistance and doping concentration can be further derived (in is the on-resistance, is a constant, is the cross-sectional area of ​​the diode), and experimental measurements are performed. By changing the doping concentration of the Schottky diode, the electrical performance parameters such as on-resistance, reverse leakage current, breakdown voltage and switching speed at different doping concentrations are measured. The experimental data are compared and verified with the theoretically derived relationship model, and the model parameters are continuously adjusted and optimized to obtain an accurate mapping function relationship between doping concentration and electrical performance. For example, the doping concentration of the Schottky diode is changed by ion implantation technology, and then various electrical performance indicators at different doping concentrations are measured using precision electrical performance testing equipment. The experimental data are fitted with the theoretically derived relationship model, and the parameters in the model are adjusted so that the model can better predict the electrical performance at different doping concentrations. Step S230, according to the numerical range of the efficiency requirement, the specific value of each efficiency requirement is brought into the mapping function. For example, if the required on-resistance is 0.3Ω, the corresponding doping concentration range can be obtained through the mapping function. Assume that the mapping function of the on-resistance and doping concentration that has been obtained is ,Will Substitute into the function, and the relationship between carrier mobility and doping concentration is known and the cross-sectional area of ​​the diode , the doping concentration can be solved by numerical calculation method range, for different efficacy requirements, solve the mapping function (doping concentration), forming an interval, for high breakdown voltage, the doping concentration should be lower, for low on-resistance, the doping concentration should be higher. Taking breakdown voltage as an example, assuming that the relationship between breakdown voltage and doping concentration is ,(in is the breakdown voltage, and is the empirical coefficient), the required breakdown voltage value is substituted into the function to solve the range of doping concentration. For the case of low on-resistance, the mapping function of on-resistance and doping concentration is used to solve the corresponding doping concentration range.

[0021] Step S240, performing structural feature analysis on the doping requirement concentration according to the groove structure feature to obtain the doping concentration distribution requirement. Specifically, according to the groove structure feature of the Schottky diode, perform lateral and longitudinal depth segmentation on it, determine the lateral structure span and the longitudinal structure span, so as to analyze the difference in doping requirement concentration in different regions, establish the influence relationship between the structural feature and the electrical performance data of the doping concentration, consider the influence of the shape, depth, spacing and other factors of the groove on the electric field distribution, carrier transport, etc., and then affect the effect of the doping concentration on the electrical performance, based on the influence relationship of the electrical performance data, perform doping concentration analysis according to the lateral structure span and the longitudinal structure span, determine the longitudinal doping gradient requirement and the lateral doping gradient requirement, so as to meet the different requirements of the doping concentration in different structural regions, and finally obtain the doping concentration distribution requirement that meets the groove structure feature.

[0022] In a possible implementation, the doping requirement concentration is analyzed according to the groove structure characteristics to obtain the doping concentration distribution requirements. Step S240 further includes step S241, which performs horizontal and vertical depth segmentation of the structure according to the groove structure characteristics to determine the horizontal structure span and the vertical structure span. Specifically, according to the groove structure characteristics of the Schottky diode, the horizontal and vertical depth segmentation of the structure is performed. The horizontal structure span and the vertical structure span are determined through precise measurement and analysis. The horizontal structure span refers to the size range of the groove in the horizontal direction, while the vertical structure span is the depth range of the groove in the vertical direction. The determination of the parameters provides a basis for subsequent analysis.

[0023] Step S242, establish the influence relationship between the structural features and the doping concentration on the electrical performance data. Specifically, establish the influence relationship between the structural features and the doping concentration on the electrical performance data, consider the influence of different parts of the groove structure on the electrical performance, for example, the depth, width, shape and other factors of the groove will affect the electrical performance indicators such as electric field distribution and carrier transport, and at the same time, the change of doping concentration will also have an important influence on these electrical performance indicators, and establish the influence relationship between the structural features and the doping concentration on the electrical performance data through theoretical analysis and experimental verification.

[0024] Step S243, based on the influence relationship of the electrical performance data, perform doping concentration analysis according to the lateral structure span and the longitudinal structure span, determine the longitudinal doping gradient requirement and the lateral doping gradient requirement, and characterize the different requirements of different structural regions for doping concentration. Specifically, based on the influence relationship of electrical performance data, the doping concentration is analyzed according to the longitudinal structural span. From the surface to the bottom of the groove, different depth regions have different requirements for doping concentration. Deeper regions such as the bottom of the groove require lower doping concentrations to increase the breakdown voltage, while regions close to the groove surface may require higher doping concentrations to reduce the on-resistance. The function Nd(d)=f(d) (d is the depth) can be used to describe the variation of doping concentration with depth, and the longitudinal doping gradient requirement is determined. Similarly, based on the influence relationship of electrical performance data, the doping concentration is analyzed according to the lateral structural span. On the sidewall and bottom of the groove, the doping concentration distribution may be uneven. The doping concentration at the bottom of the groove is usually low, while the middle of the sidewall requires a higher doping concentration. By analyzing the lateral distribution, the doping concentration distribution function Nd(x)=g(x) (x is the lateral position) of the sidewall and bottom is determined, thereby determining the lateral doping gradient requirement. The doping concentration gradient requirement characterizes the different requirements for doping concentration in different structural regions, and provides an important basis for realizing the optimal design of Schottky diodes.

[0025] Step S300, perform parameter simulation on the doping process means through simulation space, obtain the process parameters and doping evaluation results of the groove structure characteristics, and extract the stable groove structure, risk deviation structure and its corresponding process parameters based on the doping evaluation results. Specifically, first collect the physical space structure and various manufacturing parameters of the ion implantation doping process, and build a simulation database and simulation space. Then, according to the groove structure characteristics and the doping concentration distribution requirements, configure the parameters to simulate the process parameters, evaluate the doping effect of the simulation results and classify them for consistency evaluation, add the results to the doping evaluation, and then extract the preferred process parameters with the smallest difference from the process target parameters in the doping evaluation results. According to the consistency evaluation results, determine whether the process type is a stable groove structure or a risk deviation structure, and determine the corresponding process parameters. For the stable groove structure, its parameters can be used directly, and the risk deviation structure needs to optimize the parameters to improve the process stability and reliability.

[0026] In one possible implementation, parameter simulation is performed on the doping process means through simulation space to obtain process parameters of the groove structure characteristics and doping evaluation results, and based on the doping evaluation results, a stable groove structure, a risk deviation structure and its corresponding process parameters are extracted. Step S300 further includes step S310, collecting the physical space structure of the ion implantation doping process, and sensing various manufacturing processing parameters in the doping process, including injection energy, dosage, angle, temperature and time, as well as doping concentration control results. Specifically, the physical space structure of the ion implantation doping process is collected, which includes information such as the layout of the ion implantation equipment and the position of the trench structure in the physical space. At the same time, the various manufacturing parameters in the doping process are sensed. These parameters include injection energy, dosage, angle, temperature and time, which directly affect the effect of ion implantation and the distribution of doping concentration. In addition, the doping concentration control results need to be collected to evaluate and optimize the process. The injection energy determines the penetration depth of ions in the semiconductor material. Different energies will result in different distributions of doping concentration in the vertical depth. The dosage affects the total amount of doping. The angle will change the direction of ion implantation, thereby affecting the uniformity of doping in the trench structure. Temperature and time will also affect the doping process. For example, high temperature may lead to increased impurity diffusion, and the length of time will affect the degree of doping. The doping concentration control results reflect the actual doping concentration level achieved under the current process parameters, providing a basis for subsequent optimization.

[0027] Step S320, based on the collected manufacturing process parameters and doping concentration control results, the simulation experiment design tool is used to simulate the experimental data of different process conditions and different groove structures, and each process parameter is used as a dimension to store the experimental simulation data in a multi-dimensional matrix to build a simulation database. Specifically, based on the collected manufacturing process parameters and doping concentration control results, the simulation experiment design tool is used to simulate the experimental data of different process conditions and different groove structures. The tool can simulate the ion implantation process according to the input parameters, and predict the distribution of doping concentration and the electrical performance of the diode. Each process parameter is used as a dimension to store the experimental simulation data in a multi-dimensional matrix. For example, the parameters such as injection energy, dose, angle, temperature, time, etc. constitute a dimension respectively, and the results such as doping concentration and electrical performance are also added to the matrix as dimensions, so as to conveniently analyze and compare the simulation results under different parameter combinations. Through a large number of simulation experiments, a simulation database is built. The database contains simulation data under various process conditions and groove structures, which can provide rich references for subsequent manufacturing space simulation and process optimization.

[0028] Step S330, using a physical simulation tool, according to the physical space structure, the manufacturing space simulation is performed to simulate the physical behavior of diode devices and processes, and the simulation database is fitted into the manufacturing simulation space to construct the simulation space. Specifically, using a physical simulation tool, according to the collected physical space structure, the manufacturing space simulation is performed. The tool can simulate the physical behavior of diode devices and processes, including ion implantation, impurity diffusion, electric field distribution, etc. Through physical simulation, the performance and reliability of the diode can be predicted more accurately. Fitting the constructed simulation database into the manufacturing simulation space means that in the manufacturing space simulation, the data in the database can be directly called for analysis and optimization. For example, when adjusting the process parameters, the simulation results under similar parameter combinations in the database can be quickly queried to provide a reference for process optimization. Through the above steps, a complete simulation space is constructed. The simulation space includes the physical space structure, process parameters, simulation database and physical simulation tools, which can be used to comprehensively analyze and optimize the doping process of Schottky diodes.

[0029] In one possible implementation, parameter simulation is performed on the doping process through the simulation space to obtain process parameters of the groove structure characteristics and doping evaluation results, and the stable groove structure, risk deviation structure and their corresponding process parameters are extracted based on the doping evaluation results. Step S300 further includes step S340, configuring the groove structure parameters of the simulation space according to the groove structure characteristics, configuring the process target parameters of the simulation space according to the doping concentration distribution requirements, performing process parameter simulation through the simulation space, and obtaining process simulation results by adjusting different process parameters, and the process simulation results have structure position labels. Specifically, according to the acquired groove structure characteristics, the groove structure parameters of the simulation space are configured, including the shape, depth, spacing and other characteristic information of the groove, to ensure that the groove structure in the simulation space is consistent with the actual Schottky diode. For example, if the actual groove is rectangular in shape, the depth is a specific value, and the spacing also has a certain range, then these parameters are set accordingly in the simulation space, and the process target parameters of the simulation space are configured using the doping concentration distribution requirements. According to the performance requirements of the Schottky diode, the required doping concentration distribution is determined. For example, in order to achieve low on-resistance, it may be necessary to set a higher doping concentration in the area close to the groove surface; in order to increase the breakdown voltage, a lower doping concentration is required in deeper areas such as the bottom of the groove. The doping concentration distribution requirements are converted into process target parameters and configured in the simulation space. The process parameter simulation is performed through the simulation space. By adjusting different process parameters, such as injection energy, dose, angle, temperature and time, the influence on the doping concentration distribution is observed. The obtained process simulation results have structural position labels, which are helpful for the subsequent evaluation of the doping effects at different positions.

[0030] Step S350, according to the structural position mapping relationship of the process target parameters, the doping effect of the process simulation results is evaluated, the doping evaluation results are obtained, and the mapping association between the process parameters and the doping evaluation results is established. Specifically, according to the structural position mapping relationship of the process target parameters, the doping effect of the process simulation results is evaluated. The mapping relationship links the process target parameters with the actual structural positions. For example, a specific doping concentration requirement corresponds to a certain depth or lateral position of the groove. Through the mapping relationship, it is possible to accurately evaluate whether the doping effect at different structural positions meets expectations. After evaluating the process simulation results, the doping evaluation results are obtained. The results may include information such as whether the doping concentration reaches the target value, whether the electric field distribution is reasonable, and whether the electrical performance of the diode meets the requirements. Establishing a mapping association between the process parameters and the doping evaluation results means that it is possible to clearly know what kind of doping effect evaluation results a specific combination of process parameters will produce. The association is very important for subsequent process optimization and can help determine which process parameters have the greatest impact on the doping effect.

[0031] Step S360, classify the process parameters and doping evaluation results according to the structural position labels, and construct data clusters for each structural position. Specifically, classify the process parameters and doping evaluation results according to the structural position labels of the process simulation results. For example, classify the results of groove areas of different depths or different lateral positions separately to construct data clusters for each structural position. Each data cluster contains the process parameters and doping evaluation results at a specific structural position, which can easily analyze the situations of different structural positions separately and also provide a basis for subsequent consistency evaluation.

[0032] Step S370, based on the data clusters of each structural position, perform effect consistency evaluation, use the ratio of the theoretical doping result of the process parameter to the actual result as the evaluation coefficient, calculate the dispersion of the evaluation coefficient in the data cluster, determine the consistency evaluation result, and add the consistency evaluation result to the doping evaluation result. Specifically, the ratio of the theoretical doping result to the actual result of the process parameters is used as the evaluation coefficient. The theoretical doping result is the doping effect that should be achieved according to the process target parameters, and the actual result is the actual doping situation obtained through process simulation. The ratio can reflect the accuracy and stability of process parameter control. The dispersion of the evaluation coefficient in the data cluster is calculated. The dispersion reflects the fluctuation of the evaluation coefficient. If the dispersion is small, it means that the process parameter control is relatively stable, and the correspondence between the effect and the process parameter setting is relatively stable; if the dispersion is large, it means that there is a large deviation. The consistency evaluation result is determined according to the dispersion. If the dispersion is within an acceptable range, it means that the consistency is good and the process parameter control is relatively stable; if the dispersion exceeds the acceptable range, it means that the process parameters need to be further adjusted to improve the consistency. The consistency evaluation result is added to the doping evaluation result, which can comprehensively consider the doping effect and the stability of the process parameters, and provide more comprehensive information for subsequent process optimization.

[0033] In a possible implementation, parameter simulation is performed on the doping process means through the simulation space to obtain the process parameters and doping evaluation results of the groove structure characteristics, and the stable groove structure, the risk deviation structure and the corresponding process parameters thereof are extracted based on the doping evaluation results. Step S300 further includes step S380, extracting the preferred process parameters with the smallest difference from the process target parameters in the doping evaluation results, and determining the target consistency evaluation results, which are the consistency evaluation results corresponding to the preferred process parameters. Specifically, the preferred process parameters with the smallest difference from the process target parameters are extracted from the doping evaluation results, and the difference can be determined by comparing the actual doping effect with the expected effect of the process target parameters. For example, if the process target parameters require specific doping concentration distribution and electrical performance indicators, and the actual doping evaluation results differ from these target parameters, then by calculating the difference, the process parameter combination with the smallest difference can be found to determine the target consistency evaluation result, that is, the consistency evaluation result corresponding to the preferred process parameters. The consistency evaluation result is an indicator used to measure the stability and accuracy of process parameter control. If the preferred process parameters can produce the result closest to the process target parameters, then the corresponding consistency evaluation result will also be used as the target consistency evaluation result.

[0034] Step S390, determining the process type according to the target consistency evaluation result. When the consistency evaluation result reaches the stability type threshold, the process type is a stable groove structure type. When the consistency evaluation result meets the risk type threshold, the process type is a risk deviation structure type. Specifically, the process type is determined according to the target consistency evaluation results. First, the stability type threshold is set. This threshold is the standard for judging whether the process belongs to the stable groove structure type. When the consistency evaluation result reaches the stability type threshold, it means that the process parameter control is very stable, and the effect and the process parameter setting have a good correspondence. If the consistency evaluation result reaches the stability type threshold, then its process type is the stable groove structure type. The stable groove structure means that under this process condition, the doping effect and structural characteristics of the groove are relatively stable, which can be directly applied to production and manufacturing, and can ensure high product quality and performance stability. A risk type threshold is set. This threshold is the standard for judging whether the process belongs to the risk deviation structure type. When the consistency evaluation result meets the risk type threshold, it means that there are large deviations and uncertainties in the process parameter control. If the consistency evaluation result meets the risk type threshold, then its process type is the risk deviation structure type. The risk deviation structure means that under this process condition, the doping effect and structural characteristics of the groove have large risks and uncertainties, and further optimization and adjustment are needed to improve the stability and reliability of the process.

[0035] Step S400, taking the doping concentration distribution requirement as the target, optimizing the search for the risk deviation structure and its process parameters based on the simulation space, and obtaining the optimal doping parameters. Specifically, taking the doping concentration distribution requirement as the target, the constructed simulation space is used to optimize the search for the risk deviation structure and its process parameters. By adjusting the process parameters and performing multiple rounds of iterative searches, different parameter combinations are continuously tried, and the optimization results are evaluated based on the degree of proximity between the doping concentration distribution and the target requirements and the diode electrical performance indicators. When the convergence conditions are reached, the optimal doping parameters are determined to achieve the optimization of the risk deviation structure and improve the overall performance and reliability of the Schottky diode.

[0036] Step S500, integrate the parameters of the stable groove structure and its corresponding process parameters with the optimal doping parameters according to the groove structure characteristics to generate doping control parameters. Specifically, firstly, the groove structure characteristics are segmented according to the stable groove structure and the risk deviation structure, the type area is determined and the corresponding process parameters are marked. Then, the ion implantation range is analyzed according to the process parameters of each type of area, and the process coupling area is established. Then, the influence analysis is performed according to the process coupling area, the regional influence correction coefficient is obtained and the parameters are balanced. Finally, the balanced process parameters of the coupling area are used to smoothly connect the process parameters of the stable groove structure and the risk deviation structure to generate doping control parameters, which are used in Schottky diode manufacturing to achieve precise doping control and improve performance and reliability.

[0037] In a possible implementation, the stable groove structure and its corresponding process parameters are integrated with the optimal doping parameters according to the groove structure characteristics to generate doping control parameters. Step S500 further includes step S510, segmenting the groove structure characteristics according to the stable groove structure and the risk deviation structure, determining the type area of ​​the groove structure, and marking its corresponding process parameters. The stable groove structure marks the process parameters of the stable groove structure, and the risk deviation structure marks the optimal doping parameters. Specifically, the groove structure characteristics are segmented according to the stable groove structure and the risk deviation structure, because different structural regions may show different characteristics and requirements during the doping process. Through segmentation, it is possible to clearly distinguish which regions are relatively stable and which regions have risk deviations, determine the type area of ​​the groove structure, and divide the groove structure into stable regions and risk deviation regions so that they can be processed and optimized separately in the future, and mark the process parameters corresponding to each type of region. For the stable groove structure, mark its verified stable process parameters; for the risk deviation structure, mark the optimal doping parameters obtained through optimization search, and clearly know the process parameters that should be adopted in each region.

[0038] Step S520, perform ion implantation range analysis based on the process parameters of each type of region, and establish a process coupling region. Specifically, perform ion implantation range analysis based on the process parameters of each type of region. Ion implantation is a key step in the doping process. Different process parameters will result in different ion implantation ranges in the trench structure. By analyzing the ion implantation range, the mutual influence between different regions can be understood. Based on the ion implantation range analysis, a process coupling region is established. The region is a region where interaction may occur between a stable trench structure and a risk deviation structure. In this region, the process parameters of different types of regions need to be coordinated and optimized to ensure the performance and reliability of the entire trench structure.

[0039] Step S530, performing an influence analysis of various types of regions according to the process coupling region, and obtaining a regional influence correction coefficient. Specifically, performing an influence analysis of various types of regions according to the process coupling region, determining the influence of the stable groove structure and the risk deviation structure on the coupling region, and the feedback influence of the coupling region on different types of regions, is helpful to understand the relationship between the various regions, and provides a basis for subsequent parameter adjustment. Through the influence analysis, the regional influence correction coefficient is obtained, and the coefficient is used to adjust the process parameters of different types of regions to achieve parameter balance of the entire groove structure. The determination of the correction coefficient needs to comprehensively consider the mutual influence between the various regions and the goal of doping control.

[0040] Step S540, performing parameter balancing on the process coupling region based on the regional impact correction coefficient, and determining the balanced process parameters of the coupling region. Specifically, the process coupling region is parameter balanced based on the regional impact correction coefficient, and the doping effect and electrical performance of the coupling region are optimized by adjusting the process parameters, while ensuring the coordination with the stable groove structure and the risk deviation structure, and determining the balanced process parameters of the coupling region. The parameters are the optimal parameters obtained after adjustment after considering the mutual influence between the regions, and are used to achieve parameter balancing of the entire groove structure.

[0041] Step S550, using the balanced process parameters of the coupling region to smoothly connect the process parameters of the stable groove structure and the risk deviation structure to generate the doping control parameters. Specifically, using the balanced process parameters of the coupling region to smoothly connect the process parameters of the stable groove structure and the risk deviation structure to generate the doping control parameters can ensure that the process parameters of different types of regions transition naturally without sudden changes or inconsistencies. The generated doping control parameters will be used in the actual Schottky diode manufacturing process to achieve precise doping control.

[0042] The embodiment of the present application adopts the method of identifying the groove structure characteristics (including shape, depth and spacing) of the Schottky diode and obtaining the corresponding efficiency requirements to parse the doping concentration distribution requirements. Then, the doping process is simulated through the simulation space to obtain the relevant process parameters and doping evaluation results, and the stable structure and risk deviation structure are extracted. These risk deviation structures are optimized to obtain the optimal doping parameters. Finally, the stable structure and the optimized doping parameters are integrated to generate the control parameters for controlling the doping process, so as to achieve the technical effect of accurately regulating the key electrical properties of the Schottky diode and improving the device performance and the stability of the manufacturing process.

[0043] In the above, refer to Figure 1 The automatic doping control method for manufacturing a trench Schottky diode according to an embodiment of the present invention is described in detail. Figure 2An automatic doping control system for trench Schottky diode fabrication according to an embodiment of the present invention is described.

[0044] The automatic doping control system for manufacturing trench Schottky diodes according to the embodiment of the present invention is used to solve the technical problem that the electrical performance requirements of different regions in the manufacturing process of trench Schottky diodes in the prior art cannot be accurately met, and achieves the technical effect of accurately regulating the key electrical performance of Schottky diodes and improving the device performance and the stability of the manufacturing process. The automatic doping control system for manufacturing trench Schottky diodes includes: a trench structure acquisition module 10, a doping concentration distribution demand acquisition module 20, a parameter simulation module 30, an optimization search module 40, and a doping control parameter generation module 50.

[0045] The trench structure acquisition module 10 is used to acquire the trench structure of the Schottky diode, and to identify and extract the shape, depth, and spacing features of the trench structure to obtain the trench structure features.

[0046] The doping concentration distribution requirement acquisition module 20 is used to acquire the performance requirement, and analyze the doping concentration distribution parameters of the trench structure characteristics according to the performance requirement to obtain the doping concentration distribution requirement.

[0047] The parameter simulation module 30 is used to perform parameter simulation on the doping process through the simulation space, obtain the process parameters of the groove structure characteristics and the doping evaluation results, and extract the stable groove structure, risk deviation structure and its corresponding process parameters based on the doping evaluation results.

[0048] The optimization search module 40 is used to optimize and search the risk deviation structure and its process parameters based on the simulation space with the doping concentration distribution requirement as the target, so as to obtain the optimal doping parameters;

[0049] The doping control parameter generating module 50 is used to integrate the stable trench structure and its corresponding process parameters with the optimal doping parameters according to the trench structure characteristics to generate doping control parameters.

[0050] The specific configuration of the doping concentration distribution requirement acquisition module 20 will be described in detail below. As described above, the efficacy requirement is acquired, and the doping concentration distribution parameter of the groove structure characteristics is analyzed according to the efficacy requirement to obtain the doping concentration distribution requirement. The doping concentration distribution requirement acquisition module 20 further includes: an electrical performance requirement quantification unit, the electrical performance requirement quantification unit is used to quantify the electrical performance requirement according to each efficacy parameter of the efficacy requirement, and the efficacy requirement includes on-resistance, reverse leakage current, breakdown voltage, and switching speed; a mapping function relationship acquisition unit, the mapping function relationship acquisition unit is used to obtain the mapping function relationship between the doping concentration and the electrical performance; a doping concentration calculation unit, the doping concentration calculation unit is used to calculate the electrical performance requirement using the mapping function relationship to obtain the doping requirement concentration; a structural feature analysis unit, the structural feature analysis unit is used to perform structural feature analysis on the doping requirement concentration according to the groove structure characteristics to obtain the doping concentration distribution requirement.

[0051] Among them, the doping requirement concentration is analyzed according to the groove structure characteristics to obtain the doping concentration distribution requirement, and the structural feature analysis unit further includes: a structural span determination subunit, the structural span determination subunit is used to perform structural lateral and vertical depth segmentation according to the groove structure characteristics, and determine the lateral structural span and the vertical structural span; an influence relationship establishment subunit, the influence relationship establishment subunit is used to establish the electrical performance data influence relationship between structural characteristics and doping concentration; a requirement determination subunit, the requirement determination subunit is used to perform doping concentration analysis according to the lateral structural span and the vertical structural span based on the electrical performance data influence relationship, determine the vertical doping gradient requirement and the lateral doping gradient requirement, and characterize the different requirements for doping concentration in different structural areas.

[0052] The specific configuration of the parameter simulation module 30 will be described in detail below. As described above, the parameter simulation is performed for the doping process means through the simulation space, the process parameters and doping evaluation results of the groove structure characteristics are obtained, and the stable groove structure, the risk deviation structure and its corresponding process parameters are extracted based on the doping evaluation results. The parameter simulation module 30 further includes: a physical space structure acquisition unit, the physical space structure acquisition unit is used to collect the physical space structure of the ion implantation doping process, and sense the various manufacturing process parameters in the doping process, including the injection energy, dose, angle, temperature and time, and the doping concentration control result; an experimental data simulation unit, the experimental data simulation unit is used to simulate the experimental data of different process conditions and different groove structures based on the collected manufacturing process parameters and doping concentration control results, and use the simulation experiment design tool to store the experimental simulation data in a multi-dimensional matrix with each process parameter as a dimension to construct a simulation database; a manufacturing space simulation unit, the manufacturing space simulation unit is used to use the physical simulation tool to perform manufacturing space simulation according to the physical space structure, to simulate the physical behavior of diode devices and processes, and fit the simulation database to the manufacturing simulation space to construct the simulation space.

[0053] Among them, the parameter simulation module 30 may further include: a process parameter simulation unit, the process parameter simulation unit is used to configure the groove structure parameters of the simulation space according to the groove structure characteristics, configure the process target parameters of the simulation space according to the doping concentration distribution requirements, perform process parameter simulation through the simulation space, and obtain process simulation results by adjusting different process parameters, and the process simulation results have a structural position label; a doping effect evaluation unit, the doping effect evaluation unit is used to evaluate the doping effect of the process simulation result according to the structural position mapping relationship of the process target parameter, obtain the doping evaluation result, and establish a mapping association between the process parameter and the doping evaluation result; a data cluster construction unit, the data cluster construction unit is used to classify the process parameters and the doping evaluation results according to the structural position label, and construct a data cluster for each structural position; a consistency evaluation result determination unit, the consistency evaluation result determination unit is used to perform effect consistency evaluation according to the data clusters of each structural position, use the ratio of the theoretical doping result of the process parameter to the actual result as the evaluation coefficient, calculate the dispersion of the evaluation coefficient in the data cluster, determine the consistency evaluation result, and add the consistency evaluation result to the doping evaluation result.

[0054] Among them, the parameter simulation module 30 may further include: a target consistency evaluation result determination unit, the target consistency evaluation result determination unit is used to extract the preferred process parameters with the smallest difference from the process target parameters in the doping evaluation results, and determine the target consistency evaluation results, the target consistency evaluation results are the consistency evaluation results corresponding to the preferred process parameters; a process type determination unit, the process type determination unit is used to perform process type determination based on the target consistency evaluation results, when the consistency evaluation result reaches the stability type threshold, its process type is a stable groove structure type, when the consistency evaluation result meets the risk type threshold, its process type is a risk deviation structure type.

[0055] The specific configuration of the doping control parameter generation module 50 will be described in detail below. As described above, the stable groove structure and its corresponding process parameters are integrated with the optimal doping parameters according to the groove structure characteristics to generate doping control parameters. The doping control parameter generation module 50 further includes: a process parameter labeling unit, the process parameter labeling unit is used to segment the groove structure characteristics according to the stable groove structure and the risk deviation structure, determine the type area of ​​the groove structure, and label its corresponding process parameters, the stable groove structure labels the process parameters of the stable groove structure, and the risk deviation structure labels the optimal doping parameters; a process coupling area establishment unit, the process coupling area establishment unit is used to divide the groove structure characteristics according to the stable groove structure and the risk deviation structure, determine the type area of ​​the groove structure, and label its corresponding process parameters, the stable groove structure labels the process parameters of the stable groove structure, and the risk deviation structure labels the optimal doping parameters; The method comprises the following steps: performing ion implantation range analysis on the process parameters of each type of region and establishing a process coupling region; an influence analysis unit, wherein the influence analysis unit is used to perform influence analysis on each type of region according to the process coupling region and obtain a regional influence correction coefficient; a parameter balancing unit, wherein the parameter balancing unit is used to balance the parameters of the process coupling region based on the regional influence correction coefficient and determine the balanced process parameters of the coupling region; and a doping control parameter generating unit, wherein the doping control parameter generating unit is used to smoothly connect the process parameters of the stable groove structure and the risk deviation structure by using the balanced process parameters of the coupling region and generate the doping control parameters.

[0056] The automatic doping control system for manufacturing trench Schottky diodes provided in the embodiments of the present invention can execute the automatic doping control method for manufacturing trench Schottky diodes provided in any embodiment of the present invention, and has the corresponding functional modules and beneficial effects of the execution method.

[0057] Although the present application makes various references to certain modules in the system according to the embodiments of the present application, any number of different modules may be used and run on the user terminal and / or server, and the various units and modules included are only divided according to functional logic, but are not limited to the above division, as long as the corresponding functions can be achieved; in addition, the specific names of the functional units are only for the convenience of distinguishing each other, and are not used to limit the scope of protection of the present invention.

[0058] The above specific implementation manner does not constitute a limitation to the protection scope of the present application. It should be understood by those skilled in the art that various modifications, combinations and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application. In some cases, the actions or steps recorded in the present application can be performed in an order different from that in the embodiment and can still achieve the desired results. In addition, the process depicted in the accompanying drawings does not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

Claims

1. An automatic doping control method for manufacturing a trench Schottky diode, characterized in that: include: Acquire the trench structure of the Schottky diode, identify and extract the shape, depth, and spacing features of the trench structure, and obtain the trench structure features; Acquiring a power requirement, and performing doping concentration distribution parameter analysis on the trench structure characteristics according to the power requirement to obtain a doping concentration distribution requirement; Perform parameter simulation on the doping process means through simulation space to obtain process parameters and doping evaluation results of the trench structure characteristics, and extract stable trench structure, risk deviation structure and corresponding process parameters based on the doping evaluation results; Taking the doping concentration distribution requirement as the target, optimizing and searching the risk deviation structure and its process parameters based on the simulation space to obtain the optimal doping parameters; Integrate the stable trench structure and its corresponding process parameters with the optimal doping parameters according to the trench structure characteristics to generate doping control parameters; According to the functional requirements, the doping concentration distribution parameters of the trench structure characteristics are analyzed to obtain the doping concentration distribution requirements, including: quantifying the electrical performance requirements according to the various performance parameters of the performance requirements, wherein the performance requirements include on-resistance, reverse leakage current, breakdown voltage, and switching speed; Obtaining the mapping function relationship between doping concentration and electrical properties; Utilizing the mapping function relationship, calculating the doping concentration of the electrical performance requirement to obtain the doping requirement concentration; Performing structural feature analysis on the required doping concentration according to the groove structure feature to obtain the required doping concentration distribution; The process parameters and doping evaluation results for obtaining the trench structure characteristics include: configuring the groove structure parameters of the simulation space according to the groove structure characteristics, configuring the process target parameters of the simulation space according to the doping concentration distribution requirements, performing process parameter simulation through the simulation space, and obtaining process simulation results by adjusting different process parameters, wherein the process simulation results have structure position labels; According to the structural position mapping relationship of the process target parameters, the doping effect of the process simulation result is evaluated to obtain a doping evaluation result, and a mapping association between the process parameters and the doping evaluation result is established; Classifying the process parameters and doping evaluation results according to the structural position labels to construct data clusters for each structural position; According to the data clusters of each structural position, an effect consistency evaluation is performed, a ratio of a theoretical doping result of the process parameter to an actual result is used as an evaluation coefficient, a dispersion of the evaluation coefficient in the data cluster is calculated, a consistency evaluation result is determined, and the consistency evaluation result is added to the doping evaluation result; The stable trench structure and its corresponding process parameters are integrated with the optimal doping parameters according to the trench structure characteristics to generate doping control parameters, including: Segment the groove structure features according to the stable groove structure and the risk deviation structure, determine the type area of ​​the groove structure, and mark the corresponding process parameters, the stable groove structure marks the process parameters of the stable groove structure, and the risk deviation structure marks the optimal doping parameters; Analyze the ion implantation range according to the process parameters of each type of area and establish the process coupling area; Perform influence analysis on various types of regions according to the process coupling regions to obtain regional influence correction coefficients; Performing parameter balancing on the process coupling region based on the region impact correction coefficient to determine balanced process parameters of the coupling region; The process parameters of the stable trench structure and the risk deviation structure are smoothly connected by utilizing the balanced process parameters of the coupling region to generate the doping control parameters.

2. The automatic doping control method for manufacturing a trench Schottky diode according to claim 1, characterized in that: Performing structural feature analysis on the required doping concentration according to the groove structure feature to obtain the required doping concentration distribution includes: According to the groove structure characteristics, perform horizontal and vertical depth segmentation of the structure to determine the horizontal structure span and the vertical structure span; Establish the relationship between structural characteristics and doping concentrations affecting electrical performance data; Based on the influence relationship of the electrical performance data, the doping concentration is analyzed according to the lateral structure span and the longitudinal structure span, the longitudinal doping gradient requirement and the lateral doping gradient requirement are determined, and the different requirements of different structural regions for doping concentration are characterized.

3. The automatic doping control method for manufacturing a trench Schottky diode according to claim 1, characterized in that: Parameter simulation of doping process methods is carried out through simulation space, including: Collect the physical spatial structure of the ion implantation doping process and sense the manufacturing parameters in the doping process, including implantation energy, dose, angle, temperature and time, as well as the doping concentration control results; Based on the collected manufacturing process parameters and doping concentration control results, a simulation experiment design tool is used to simulate experimental data of different process conditions and different trench structures, and each process parameter is used as a dimension to store the experimental simulation data in a multi-dimensional matrix to build a simulation database; A physical simulation tool is used to perform manufacturing space simulation according to the physical space structure to simulate the physical behavior of diode devices and processes, and the simulation database is fitted into the manufacturing simulation space to construct the simulation space.

4. The automatic doping control method for manufacturing a trench Schottky diode according to claim 1, characterized in that: Based on the doping evaluation results, a stable trench structure, a risk deviation structure and corresponding process parameters are extracted, including: Extracting the preferred process parameter with the smallest difference from the process target parameter in the doping evaluation result, and determining the target consistency evaluation result, wherein the target consistency evaluation result is the consistency evaluation result corresponding to the preferred process parameter; The process type is determined based on the target consistency evaluation result. When the consistency evaluation result reaches the stability type threshold, the process type is a stable groove structure type. When the consistency evaluation result meets the risk type threshold, the process type is a risk deviation structure type.

5. An automatic doping control system for trench Schottky diode manufacturing, characterized in that: The system is used to implement the automatic doping control method for manufacturing a trench Schottky diode according to any one of claims 1 to 4, and the system comprises: A trench structure acquisition module, which is used to acquire the trench structure of the Schottky diode, identify and extract the shape, depth, and spacing features of the trench structure, and obtain trench structure features; A doping concentration distribution requirement acquisition module, the doping concentration distribution requirement acquisition module is used to acquire the efficacy requirement, and perform doping concentration distribution parameter analysis on the groove structure characteristics according to the efficacy requirement to obtain the doping concentration distribution requirement; A parameter simulation module, which is used to perform parameter simulation on the doping process means through a simulation space, obtain process parameters of the trench structure characteristics and doping evaluation results, and extract a stable trench structure, a risk deviation structure and its corresponding process parameters based on the doping evaluation results; An optimization search module, wherein the optimization search module is used to optimize the risk deviation structure and its process parameters based on the simulation space with the doping concentration distribution requirement as the target, so as to obtain the optimal doping parameters; A doping control parameter generation module is used to integrate the stable trench structure and its corresponding process parameters with the optimal doping parameters according to the trench structure characteristics to generate doping control parameters.

Images