Vertical interconnect open-circuit sector stub circuit, package housing and SIP inverter module

Abstract

This application relates to the field of frequency converter module technology, and provides a vertically interconnected open-circuit fan-shaped stub circuit, a package housing, and a SIP frequency converter module. The circuit includes: a vertically interconnected open-circuit fan-shaped stub structure, vertically interconnected metallized vias, and a multilayer HTCC substrate. The vertically interconnected open-circuit fan-shaped stub structure includes a stripline and a predetermined number of fan-shaped stubs. The stripline and the predetermined number of fan-shaped stubs are embedded in different layers of the multilayer HTCC substrate. The endpoints of the fan-shaped stubs and the endpoints of the stripline are coaxially connected in the vertical direction through the vertically interconnected metallized vias. The stripline is used to supply power to the amplifier power supply terminal. The vertically interconnected metallized vias form a shielding structure with the multilayer HTCC substrate and solder balls. The method of this application can achieve miniaturization and high integration design of the frequency converter module, and effectively prevent mutual interference between different signals caused by direct electrical connection when using the same power supply to power active devices in different frequency bands.

Description

Technical Field

[0001] This application belongs to the field of frequency converter module technology, and particularly relates to a vertically interconnected open-circuit fan-shaped stub circuit, a package housing, and a SIP frequency converter module. Background Technology

[0002] In many microwave and millimeter-wave systems, it is often necessary to convert higher frequency signals into lower frequency signals, which are then fed into an analog-to-digital converter for subsequent signal processing and data analysis. The downconverter is the component that performs this frequency conversion function and is widely used in receiving equipment of microwave communication systems, satellites, and broadcast television systems.

[0003] A frequency converter module contains at least three different frequency bands of radio frequency (RF) signals, including intermediate frequency (IF), local oscillator (LO), and RF frequency. Compared to transceiver modules, the interference between different frequencies in a frequency converter module is more complex. While isolation between signals in the RF link can be achieved through link design, such as adding filters, mutual interference between RF signals caused by electrical connections is a significant factor affecting the performance of the frequency converter module. Therefore, the design must ensure the isolation of RF signals between electrically connected devices to achieve better noise and spurious suppression performance of the frequency converter module.

[0004] From device to component design, traditional circuits primarily use metal enclosures made of materials such as aluminum alloy, copper, and silicon-aluminum, with PCBs or ceramic substrates as carriers. Bare chips are packaged into these enclosures to form RF links. Peripheral circuits are either packaged in the same enclosure as the bare chip, interconnected with the RF substrate using vertical insulators, adapter blocks, and backplane bonding, or formed into a larger control board, interconnected with the RF circuits using horizontal insulators and connector strips. Finally, all modules and control circuits are packaged into a single large enclosure, with RF input / output ports using coaxial connectors or waveguide structures. Due to the large available design space, RF signals can easily be isolated from DC signals using external bypass capacitors. However, this design approach suffers from problems such as large size and low integration. Summary of the Invention

[0005] To overcome the problems existing in related technologies, this application provides a vertically interconnected open-circuit fan-shaped stub circuit, a package housing, and a SIP frequency converter module, which can realize the miniaturization and high integration design of the frequency converter module. At the same time, when using the same power supply to power active devices of different frequency bands, it effectively prevents mutual interference between different signals caused by direct electrical connection.

[0006] This application is achieved through the following technical solution:

[0007] In a first aspect, embodiments of this application provide a vertical interconnect open-circuit fan stub circuit, including: a vertical interconnect open-circuit fan stub structure, vertical interconnect metallized vias, and a multilayer HTCC substrate;

[0008] The vertical interconnect open-circuit fan-shaped stub structure includes a stripline and a predetermined number of fan-shaped stubs; the stripline and the predetermined number of fan-shaped stubs are embedded in different layers of the multilayer HTCC substrate, and the endpoints of the predetermined number of fan-shaped stubs and the endpoints of the stripline are coaxially connected in the vertical direction through vertical interconnect metallized vias; the stripline is used to output to the top layer pad of the multilayer HTCC substrate and is connected to the amplifier power supply terminal for power supply through bonding.

[0009] The vertical interconnect metallized via array forms a shielding structure around the vertical interconnect open-circuit fan-shaped stub structure, together with the HTCC substrate above the vertical interconnect metallized via and the solder balls on the bottom surface of the multilayer HTCC substrate.

[0010] In one possible implementation, the preset number is 2; the preset number of fan-shaped branches includes a first open-circuit fan-shaped branch and a second open-circuit fan-shaped branch;

[0011] The stripline, the first open-circuit fan-shaped branch, and the second open-circuit fan-shaped branch are embedded in different layers of the multilayer HTCC substrate from top to bottom.

[0012] In one possible implementation, the multilayer HTCC substrate includes 10 substrate layers and 11 wiring layers, with a substrate layer sandwiched between two adjacent wiring layers.

[0013] The stripline is positioned on the 5th wiring layer of the multilayer HTCC substrate.

[0014] The first open-circuit fan-shaped branch is located on the sixth wiring layer of the multilayer HTCC substrate.

[0015] The second open-circuit fan-shaped branch is located on the 9th wiring layer of the multilayer HTCC substrate.

[0016] In one possible implementation, the opening arc of the first open-circuit fan-shaped branch is 80° and the radius is 0.6 mm;

[0017] The opening arc of the second open-circuit fan-shaped branch is 80°, and the radius of the second open-circuit fan-shaped branch is larger than the radius of the first open-circuit fan-shaped branch.

[0018] In one possible implementation, the radius of the second open-circuit fan-shaped branch is 0.735 mm.

[0019] In one possible implementation, the vertical interconnect open-circuit fan-shaped stub structure, the vertical interconnect metallized vias, and the multilayer HTCC substrate constitute a set of decoupling circuit structure parts.

[0020] The vertically interconnected open-circuit sector stub circuit also includes two sets of decoupling circuit structures; the two sets of decoupling circuit structures are symmetrically arranged to form an LC equivalent circuit.

[0021] In one possible implementation, the vertical interconnect metallized via array is disposed on the 5th to 11th wiring layers of the multilayer HTCC substrate;

[0022] The vertical interconnect metallized vias of the 5th to 11th wiring layers of the multilayer HTCC substrate form a shielding structure with the 4th substrate layer and the solder balls on the bottom surface of the multilayer HTCC substrate.

[0023] In one possible implementation, the area of ​​the vertically interconnected open-circuit sector stub circuit is 1.6 mm × 1.6 mm.

[0024] Secondly, embodiments of this application provide a package housing, including: a vertical interconnect open-circuit fan-shaped stub circuit as in the first aspect, a Kovar metal frame, a Kovar metal cover plate, and solder balls;

[0025] Kovar metal frame is disposed on the upper surface of the multilayer HTCC substrate of the vertical interconnect open-circuit fan-shaped stub circuit, forming multiple cavities with the multilayer HTCC substrate and Kovar metal cover plate; the vertical interconnect open-circuit fan-shaped stub circuit is used to combine with the external power supply bypass capacitor to form an LC equivalent circuit.

[0026] Solder balls are disposed on the lower surface of the multilayer HTCC substrate.

[0027] Thirdly, embodiments of this application provide a SIP frequency conversion module, including: a radio frequency module, a local oscillator module, an intermediate frequency module, and a package housing as described in the second aspect; the radio frequency module, the local oscillator module, and the intermediate frequency module are all isolated and disposed in each cavity of the package housing.

[0028] It is understood that the beneficial effects of the second and third aspects mentioned above can be found in the relevant descriptions in the first aspect above, and will not be repeated here.

[0029] The beneficial effects of the embodiments in this application compared with the prior art are:

[0030] This application embodiment employs a vertically interconnected open-sector stub circuit, connecting striplines, two open-sector stub structures, and a multilayer HTCC substrate in the vertical direction. This fully utilizes the space in the Z-direction and shortens the chip connection path. Typically, open-sector stub power decoupling circuits use microstrip lines, which have the disadvantage of large circuit area. Especially when a wider power decoupling frequency bandwidth is required, multiple microstrip lines of different sizes need to be connected, increasing the circuit area exponentially. It can be seen that compared to conventional open-sector stub power decoupling circuits, this invention proposes a vertically interconnected open-sector stub circuit, reducing the circuit area and thus significantly reducing the package size and weight, achieving both high performance and high integration in the module. Simultaneously, the vertically interconnected metallized via array around the vertically interconnected open-sector stub structure, along with the HTCC substrate above the vertically interconnected metallized vias and the solder balls on the bottom surface of the multilayer HTCC substrate, forms a shielding structure, further improving the electrical isolation of the entire module.

[0031] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this specification. Attached Figure Description

[0032] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0033] Figure 1 This is a schematic diagram of the structure of a vertically interconnected open-circuit sector stub circuit provided in one embodiment of this application;

[0034] Figure 2 This is a simulation result of the electrical isolation of an embodiment of the present application without vertically interconnected open-circuit sector stubs.

[0035] Figure 3 This is a schematic diagram showing the structure and isolation simulation results of a conventional open-circuit sector power supply decoupling circuit provided in an embodiment of this application; Figure 3 (a) in the diagram represents the structure of a traditional open-circuit sector stub power supply decoupling circuit. Figure 3 (b) in the figure is a schematic diagram of the isolation simulation results of the traditional open-circuit sector stub power supply decoupling circuit;

[0036] Figure 4 This is a schematic diagram of the specific structure of the stripline and fan-shaped branches embedded in a multilayer HTCC substrate according to an embodiment of this application;

[0037] Figure 5This is a schematic diagram showing the detailed unfolding of the strip-shaped line and fan-shaped branches provided in one embodiment of this application;

[0038] Figure 6 This is a schematic diagram of the isolation simulation results of a vertical interconnect open-circuit sector stub circuit provided in an embodiment of this application;

[0039] Figure 7 This is an LC equivalent circuit formed by two sets of decoupling circuit structures provided in one embodiment of this application;

[0040] Figure 8 This is a schematic diagram of the structure of the packaging shell provided in one embodiment of this application;

[0041] Figure 9 This is a schematic diagram of the structure of a SIP frequency converter module provided in one embodiment of this application. Detailed Implementation

[0042] In the following description, specific details such as particular system architectures and techniques are set forth for illustrative purposes and not for limitation, in order to provide a thorough understanding of the embodiments of this application. However, those skilled in the art will understand that this application may also be implemented in other embodiments without these specific details. In other instances, detailed descriptions of well-known systems, apparatuses, circuits, and methods have been omitted so as not to obscure the description of this application with unnecessary detail.

[0043] It should be understood that, when used in this application specification and the appended claims, the term "comprising" indicates the presence of the described features, integrals, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or a collection thereof.

[0044] It should also be understood that the term “and / or” as used in this application specification and the appended claims means any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.

[0045] As used in this application specification and the appended claims, the term "if" may be interpreted, depending on the context, as "when," "once," "in response to determination," or "in response to detection." Similarly, the phrase "if determined" or "if detected [the described condition or event]" may be interpreted, depending on the context, as meaning "once determined," "in response to determination," "once detected [the described condition or event]," or "in response to detection [the described condition or event]."

[0046] Furthermore, in the description of this application and the appended claims, the terms "first," "second," "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0047] References to "one embodiment" or "some embodiments" as described in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.

[0048] To address the issues of large size and low integration in the background technology, this application adopts System-in-Package (SIP) technology. SIP can combine and install chips with different functions in various forms within the package, and uses a three-dimensional structure to build the chips in a three-dimensional manner, which greatly reduces the size and weight of the system.

[0049] From a system-level perspective, SiP (System-in-Package) technology integrates functional or passive components within a single package, reducing interconnections and significantly improving system reliability. Compared to traditional PCBs, SiP technology offers advantages such as miniaturization, low power consumption, versatility, and high performance. To achieve the same function, SiP uses only 10-20% of the space of a PCB and consumes only 40% of the power. SiP technology can effectively achieve optimized solutions for miniaturization, high integration, and high reliability in frequency converter circuits. However, miniaturization of frequency converter circuits also presents a challenge: the highly integrated design requires careful circuit design to achieve superior performance with fewer components.

[0050] To address the issue of mutual interference between different signals caused by direct electrical connections of active devices in different frequency bands, if all open-circuit sector stub power supply decoupling circuits are in the form of microstrip lines, the disadvantage is that the circuit area is large. In particular, when a wider power supply decoupling frequency bandwidth is required, multiple sector microstrip lines of different sizes need to be connected, which increases the circuit area by multiple times.

[0051] Therefore, this application adopts a reasonable chip layout and makes full use of the space in the Z direction to greatly reduce the package size and weight, reduce the total number of solder joints, and shorten the chip connection route, thereby realizing the miniaturization, integration, and device-based nature of the frequency converter module product. In response to the problem of mutual interference between different signals caused by the direct electrical connection of active devices in different frequency bands, a vertical interconnect open-circuit fan stub circuit is adopted, including two open-circuit fan stub structures, vertical interconnect metallized vias, and multilayer HTCC substrate. This not only improves the electrical isolation of the entire module but also reduces the circuit area, realizing that the module has both high performance and high integration.

[0052] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0053] Figure 1 This is a schematic diagram of the structure of a vertically interconnected open-circuit sector stub circuit provided in an embodiment of this application, with reference to... Figure 1 The following is a detailed description of the vertically interconnected open-circuit sector stub circuit:

[0054] This application provides a vertical interconnect open-circuit fan stub circuit, including: a vertical interconnect open-circuit fan stub structure 100, a vertical interconnect metallized via 200, and a multilayer HTCC substrate 300.

[0055] The vertical interconnect open-circuit fan-shaped stub structure 100 includes a stripline 101 and a predetermined number of fan-shaped stubs 102; the stripline 101 and the predetermined number of fan-shaped stubs 102 are embedded in different layers of the multilayer HTCC substrate 300, and the endpoints of the predetermined number of fan-shaped stubs 102 and the endpoints of the stripline 101 are coaxially connected in the vertical direction through vertical interconnect metallized vias 200; the stripline 101 is used to output to the top layer pad of the multilayer HTCC substrate 300 and is connected to the amplifier power supply terminal for power supply by bonding.

[0056] For example, the layers of the multilayer HTCC substrate 300 into which the stripline 101 and the preset number of fan-shaped stubs 102 are embedded can be set according to actual needs. Meanwhile, the preset number of fan-shaped stubs 102 can be set according to the required power decoupling frequency bandwidth; the more fan-shaped stubs 102, the larger the power decoupling frequency bandwidth. The amplifier power supply terminal can be either an RF amplifier power supply terminal or a local oscillator amplifier power supply terminal.

[0057] The array of vertical interconnect metallized vias 200 forms a shielding structure around the vertical interconnect open-circuit fan-shaped stub structure 100, together with the HTCC substrate above the vertical interconnect metallized vias 200 and the solder balls on the bottom surface of the multilayer HTCC substrate 300.

[0058] By employing a vertically interconnected open-circuit fan-shaped stub circuit 102, the stripline 101, a predetermined number of open-circuit fan-shaped stubs 102, and a multilayer HTCC substrate 300 are connected in the vertical direction, making full use of the space in the Z direction and shortening the chip connection path. Typically, open-circuit fan-shaped stub power decoupling circuits use microstrip lines, which have the disadvantage of a large circuit area. Especially when a wider power decoupling frequency bandwidth is required, multiple fan-shaped microstrip lines of different sizes need to be connected, increasing the circuit area exponentially. It can be seen that compared with conventional open-circuit fan-shaped stub power decoupling circuits, this invention proposes a vertically interconnected open-circuit fan-shaped stub circuit, reducing the circuit area, thereby greatly reducing the package size and weight, and achieving a module with both high performance and high integration. Meanwhile, the array of vertical interconnect metallized vias 200 around the vertical interconnect open-circuit fan-shaped stub structure 100, together with the HTCC substrate above the vertical interconnect metallized vias 200 and the solder balls on the bottom surface of the multilayer HTCC substrate 300, forms a shielding structure, which also improves the electrical isolation of the entire module.

[0059] In one embodiment, the preset number of fan-shaped branches 102 can be 2; the preset number of fan-shaped branches 102 includes a first open-circuit fan-shaped branch 1021 and a second open-circuit fan-shaped branch 1022.

[0060] Traditional designs typically employ external power supply bypass capacitors. In the module, when the local oscillator amplifier input power level is -10 to 0 dB, and the mixer dynamic intermediate frequency input is -40 to 0 dBm, the RF isolation is approximately 100 dB. However, there is a difference between the electrical isolation and the RF isolation between the RF port and the local oscillator port. When an external 100 pF power supply bypass capacitor is used, the isolation is approximately 51 dB. Simulation results are as follows... Figure 2 As shown, 1 represents the power supply port of the RF chip, and 2 represents the output port of the power supply chip. The frequency of point m1 is 24.00 GHz, and the frequency of point m2 is 31.00 GHz. According to S(2,1) at the frequency of 24.00 GHz, there is still a 49 dB gap between the output port of the power supply chip and the RF isolation of 100 dB. Since both the RF port and the local oscillator port require electrical isolation optimization structure design, when connected to the same power supply, it is equivalent to a two-stage structure cascaded application. Therefore, if the isolation of each optimized structure in the corresponding frequency band is greater than 24.5 dB, it meets the usage requirements.

[0061] Traditional open-circuit sector stub power supply decoupling circuits employ microstrip lines. Simulation results for the circuit structure and isolation are as follows: Figure 3 (a) Figure 3 As shown in (b), the simulation results show that the isolation of this circuit is greater than 43dB in the 24GHz to 31GHz application frequency band, but the disadvantage is that the effective area of ​​the circuit is large, about 2mm×2.8mm.

[0062] In this embodiment, in order to reduce the circuit area and achieve both high performance and high integration in the module, the present invention proposes to use a vertically interconnected open-circuit fan-shaped stub circuit to replace the microstrip line-type open-circuit fan-shaped stub 102 power decoupling circuit. The stripline 101, the first open-circuit fan-shaped stub 1021 and the second open-circuit fan-shaped stub 1022 are sequentially embedded in different layers of the multilayer HTCC substrate 300 from top to bottom.

[0063] For example, the multilayer HTCC substrate 300 includes 10 substrate layers and 11 wiring layers, with a substrate layer sandwiched between adjacent wiring layers, such as... Figure 4 As shown.

[0064] Stripline 101 is disposed on the 5th wiring layer of the multilayer HTCC substrate 300; first open-circuit fan-shaped stub 1021 is disposed on the 6th wiring layer of the multilayer HTCC substrate 300; second open-circuit fan-shaped stub 1022 is disposed on the 9th wiring layer of the multilayer HTCC substrate 300. By spacing the first open-circuit fan-shaped stub 1021 and the second open-circuit fan-shaped stub 1022 vertically by a fixed number of HTCC substrate layers, mutual interference can be reduced.

[0065] For example, will Figure 4 The specific structures of the banded line 101 and the fan-shaped branch 102 are more clearly displayed as follows: Figure 5 As shown, in order to balance the electromagnetic coupling effect between the two fan-shaped branches and the out-of-band suppression requirements, the opening arc of the first open-circuit fan-shaped branch 1021 is 80° and the radius is 0.6mm.

[0066] The second open-circuit fan-shaped stub 1022 has an opening arc of 80°, and its radius is larger than that of the first open-circuit fan-shaped stub 1021. The radii of the two open-circuit fan-shaped stubs 102 are one-quarter of the wavelength of the corresponding decoupling frequency guided wave, but their lengths can be adjusted appropriately based on the electromagnetic coupling effects between the fan-shaped microstrip line structures. Typically, the opening arc of a fan-shaped stub structure is approximately 90°. However, when distributed in the same horizontal semi-circular space, an opening arc of approximately 90° would cause the two open-circuit fan-shaped stubs 102 to overlap in the horizontal direction. Therefore, the first open-circuit fan-shaped stub 1021 and the second open-circuit fan-shaped stub 1022 are spaced at a predetermined angle in the horizontal direction, for example, 20°. Setting the opening arcs of both the first open-circuit fan-shaped stub 1021 and the second open-circuit fan-shaped stub 1022 to 80° reduces mutual interference.

[0067] For example, the radius of the second open-circuit fan-shaped branch 1022 is 0.735 mm.

[0068] For example, an array of vertical interconnect metallized vias 200 is disposed on the 5th to 11th wiring layers of a multilayer HTCC substrate 300.

[0069] The vertical interconnect metallized vias 200 of the 5th to 11th wiring layers of the multilayer HTCC substrate 300 form a shielding structure with the 4th substrate layer of the multilayer HTCC substrate 300 and the solder balls on the bottom surface of the bottom layer of the multilayer HTCC substrate 300.

[0070] It should be noted that all layers of the multilayer HTCC substrate 300 have metallized vias. Figure 1 In order to represent the formed shielding structure, it is not shown in the text. Figure 1 It is displayed in the middle.

[0071] For example, the area of ​​the vertically interconnected open-circuit stub circuit is 1.6mm × 1.6mm.

[0072] The simulation results of the isolation of the vertically interconnected open-circuit fan stub circuit in this embodiment are as follows: Figure 6 As shown, the results show that the isolation of this circuit is greater than 34dB in the 24GHz to 31GHz application frequency band. Although the isolation is 9dB lower than that of the microstrip line structure, it still meets the requirements. Moreover, the circuit area is only 1.6mm×1.6mm, which is 46% of the power supply decoupling circuit area of ​​the microstrip line open-circuit fan stub 102.

[0073] In one embodiment, the vertical interconnect open-circuit fan-shaped stub structure 100, the vertical interconnect metallized via 200, and the multilayer HTCC substrate 300 constitute a set of decoupling circuit structure parts; the vertical interconnect open-circuit fan-shaped stub circuit also includes two sets of decoupling circuit structure parts; the two sets of decoupling circuit structure parts are symmetrically arranged to form an LC equivalent circuit.

[0074] For example, simulation results of isolation when the two power supply ports of the RF amplifier and local oscillator amplifier are equipped with the two sets of decoupling circuit structures and an external 100pf bypass capacitor respectively show that when the frequency is in the RF and local oscillator range (24GHz~31GHz), such as Figure 7 As shown, the vertical interconnect open-circuit sector stub circuit isolation is >130dB, which meets and exceeds the requirements of RF isolation, thus realizing a high electrical isolation design.

[0075] Taking the addition of these two sets of decoupling circuit structures to the power supply port of the RF amplifier as an example, in Figure 7 In the diagram, TermG1 represents the power supply port of the RF amplifier chip, with an impedance of 50 ohms, and TermG2 represents the power supply port, also with an impedance of 50 ohms. SnP1 represents one set of decoupling circuit structure, SnP2 represents another set of decoupling circuit structure, and C1 and C2 are external 100pF bypass capacitors. The vertical interconnect open-circuit fan-shaped stub circuit can attenuate interference signals entering the power line, and can also attenuate RF AC signals entering the power line.

[0076] As can be seen, the vertical interconnect open-circuit fan-shaped stub circuit of the present invention embeds the fan-shaped open-circuit stubs into the multilayer structure of the HTCC substrate. The stripline 101 and the two fan-shaped stubs 102 are respectively arranged in the wiring layers of the multilayer substrate. The stripline 101 is used to output to the top layer pad and is connected to the power supply terminal of the amplifier by bonding. By analyzing the LC equivalent circuit formed by the combination of microwave transmission line and fan-shaped open-circuit stub structure, the influence of the opening arc and radius of the fan-shaped stub 102 on the resonant point is analyzed, and then on the influence on out-of-band suppression, thereby achieving optimized design of electrical isolation between the RF port and the local oscillator port. In order to balance the electromagnetic coupling effect between the two fan-shaped stubs 102 and the out-of-band suppression requirements, the opening arc of the two fan-shaped stubs is 80°, and the radii are 0.6mm and 0.735mm, respectively. At the same time, electromagnetic shielding design is carried out by metallized vias on the periphery. The peripheral metallized vias, the fourth wiring layer, and the BGA solder balls form a shielding cavity to prevent mutual interference with other signals.

[0077] See Figure 8 This application provides a package housing, including: a vertically interconnected open-circuit fan-shaped stub circuit as described above, a Kovar metal frame 400, a Kovar metal cover plate 500, and solder balls.

[0078] Kovar metal frame 400 is disposed on the upper surface of the multilayer HTCC substrate 300 of the vertical interconnect open-circuit fan-shaped stub circuit, forming multiple cavities with the multilayer HTCC substrate 300 and Kovar metal cover plate 500; the vertical interconnect open-circuit fan-shaped stub circuit is used to combine with the external power supply bypass capacitor to form an LC equivalent circuit.

[0079] Solder balls are disposed on the lower surface of the multilayer HTCC substrate 300.

[0080] After the Kovar metal cover plate 500 is sealed on the casing, the RF, local oscillator, and intermediate frequency signals are separated into different enclosed resonant cavities. This not only provides the chip with connection, support, and hermetic protection, ensuring a stable operating environment for the chip, but also prevents spatial crosstalk between signals of different frequencies. The transmission of information between the chip's internal and external circuits is also accomplished through the package casing, which allows for direct measurement of RF and microwave parameters using test fixtures.

[0081] The package integrates various active and passive components such as amplifiers, filters, and mixers. By employing a rational chip layout and fully utilizing the space in the Z-direction, the package size and weight are significantly reduced, the number of solder joints is decreased, and the chip connection routes are shortened, thereby achieving miniaturization, integration, and device-level design of the frequency converter module. To address the problem of mutual interference between different signals caused by direct electrical connections between active components in different frequency bands, a vertically interconnected open-circuit fan-shaped stub circuit is adopted, including two open-circuit fan-shaped stubs 102, vertically interconnected metallized vias 200, and a multilayer HTCC substrate 300. Typically, the power decoupling circuit of the open-circuit fan-shaped stub 102 uses microstrip lines, which has the disadvantage of a large circuit area. Especially when a wider power decoupling frequency bandwidth is required, multiple fan-shaped microstrip lines of different sizes need to be connected, increasing the circuit area exponentially. This invention proposes a vertically interconnected open-circuit fan-shaped stub circuit, which not only improves the electrical isolation of the entire module but also reduces the circuit area, achieving both high performance and high integration in the module.

[0082] See Figure 9 This application provides a SIP frequency conversion module, including: a radio frequency module, a local oscillator module, an intermediate frequency module, and a package housing as described in the above embodiment; the radio frequency module, the local oscillator module, and the intermediate frequency module are all isolated and disposed in each cavity of the package housing.

[0083] In the design of frequency conversion modules, the radio frequency (RF) and local oscillator (LO) low-noise amplifiers need to be powered by the same power supply, which will result in an electrical connection between the two. Furthermore, since the RF and LO use different frequency bands, they will cause mutual interference between different signals.

[0084] By using vertically interconnected open-circuit fan-shaped stub circuits, the frequency converter module can be miniaturized and highly integrated, while effectively preventing mutual interference between different signals caused by direct electrical connections formed when using the same power supply to power active devices in different frequency bands.

[0085] It should be understood that the sequence number of each step in the above embodiments does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0086] The above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.

Claims

1. A vertically interconnected open-circuit sector stub circuit, characterized in that, Applications in SIP inverter modules include: vertical interconnect open-circuit fan-shaped stub structure, vertical interconnect metallized vias, and multilayer HTCC substrate; The vertical interconnect open-circuit fan-shaped stub structure includes a stripline and a predetermined number of fan-shaped stubs; the stripline and the predetermined number of fan-shaped stubs are embedded in different layers of the multilayer HTCC substrate, and the endpoints of the predetermined number of fan-shaped stubs and the endpoints of the stripline are coaxially connected in the vertical direction through vertical interconnect metallized vias; the stripline is used to output to the top layer pad of the multilayer HTCC substrate and is connected to the amplifier power supply terminal for power supply via bonding. The vertical interconnect metallized via array forms a shielding structure around the vertical interconnect open-circuit fan-shaped stub structure, together with the HTCC substrate above the vertical interconnect metallized via and the solder balls on the bottom surface of the multilayer HTCC substrate.

2. The vertically interconnected open-circuit sector stub circuit as described in claim 1, characterized in that, The preset quantity is 2; the preset quantity of fan-shaped branches includes a first open-circuit fan-shaped branch and a second open-circuit fan-shaped branch; The stripline, the first open-circuit fan-shaped branch, and the second open-circuit fan-shaped branch are embedded in different layers of the multilayer HTCC substrate from top to bottom.

3. The vertically interconnected open-circuit sector stub circuit as described in claim 2, characterized in that, The multilayer HTCC substrate includes 10 substrate layers and 11 wiring layers, with a substrate layer sandwiched between two adjacent wiring layers. The stripline is disposed on the fifth wiring layer of the multilayer HTCC substrate. The first open-circuit fan-shaped stub is disposed on the sixth wiring layer of the multilayer HTCC substrate; The second open-circuit fan-shaped branch is disposed on the 9th wiring layer of the multilayer HTCC substrate.

4. The vertically interconnected open-circuit sector stub circuit as described in claim 2, characterized in that, The opening arc of the first open-circuit fan-shaped branch is 80°, and the radius is 0.6 mm; The opening arc of the second open-circuit fan-shaped branch is 80°, and the radius of the second open-circuit fan-shaped branch is greater than the radius of the first open-circuit fan-shaped branch; the second open-circuit fan-shaped branch and the first open-circuit fan-shaped branch do not coincide in the opposite vertical direction and are spaced apart by a preset angle.

5. The vertically interconnected open-circuit sector stub circuit as described in claim 4, characterized in that, The radius of the second open-circuit fan-shaped branch is 0.735 mm.

6. The vertically interconnected open-circuit sector stub circuit as described in claim 1, characterized in that, The vertical interconnect open-circuit fan-shaped stub structure, the vertical interconnect metallized vias, and the multilayer HTCC substrate constitute a set of decoupling circuit structure components. The vertically interconnected open-circuit sector stub circuit also includes two sets of decoupling circuit structures; the two sets of decoupling circuit structures are symmetrically arranged to form an LC equivalent circuit.

7. The vertically interconnected open-circuit sector stub circuit as described in claim 3, characterized in that, The vertical interconnect metallized via array is disposed on the 5th to 11th wiring layers of the multilayer HTCC substrate; The vertical interconnect metallized vias of the 5th to 11th wiring layers of the multilayer HTCC substrate, together with the 4th substrate layer and the solder balls on the bottom surface of the multilayer HTCC substrate, form the shielding structure.

8. The vertically interconnected open-circuit sector stub circuit as described in claim 1, characterized in that, The area of ​​the vertically interconnected open-circuit fan-shaped stub circuit is 1.6mm × 1.6mm.

9. A packaging shell, characterized in that, include: The vertical interconnect open-circuit fan-shaped stub circuit, Kovar metal frame, Kovar metal cover plate, and solder ball as described in any one of claims 1 to 8; The Kovar metal frame is disposed on the upper surface of the multilayer HTCC substrate of the vertical interconnect open-circuit fan-shaped stub circuit, and together with the multilayer HTCC substrate and the Kovar metal cover plate, forms multiple cavities; the vertical interconnect open-circuit fan-shaped stub circuit is used to combine with an external power supply bypass capacitor to form an LC equivalent circuit. The solder balls are disposed on the lower surface of the multilayer HTCC substrate.

10. A SIP frequency converter module, characterized in that, include: RF module, local oscillator module, intermediate frequency module, and the packaging housing as described in claim 9; The radio frequency module, the local oscillator module, and the intermediate frequency module are all isolated and disposed in each cavity of the package housing.

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