A light-transmissive thin-film photovoltaic module and a preparation method thereof

Abstract

The present invention relates to a light-transmitting thin-film photovoltaic module and a preparation method thereof. The light-transmitting thin-film photovoltaic module includes: a glass substrate, a transparent front electrode layer, a battery layer, a back contact layer, and a transparent back electrode layer that are stacked in sequence; a plurality of dead zones, each dead zone including a P1 laser groove, a P2 laser groove, and a P3 laser groove; the P1 laser groove penetrates through the transparent front electrode layer, the battery layer, and the back contact layer; the P2 laser groove penetrates through the battery layer and the back contact layer; the P3 laser groove penetrates through the battery layer, the back contact layer, and the transparent back electrode layer; wherein, the P1 laser groove, the P2 laser groove, and the P3 laser groove are all light-transmitting regions; the distance between the P1 laser groove and the P2 laser groove is 0; the distance between the P2 laser groove and the P3 laser groove is 0. The light-transmitting thin-film photovoltaic module provided by the present invention can improve the light-transmitting uniformity and light-transmitting effect of the module, improve the appearance yield, and at the same time can reduce the process time of the module, reduce the process cost, and improve the efficiency of the module.

Description

Technical Field

[0001] The present invention relates to the technical field of thin-film photovoltaic modules, and particularly relates to a light-transmitting thin-film photovoltaic module and a preparation method thereof. Background Art

[0002] The structure of a conventional opaque thin-film photovoltaic module is as Figure 1 shown, including a glass substrate 101, a front electrode 102, a cell layer (pn junction) 103, a back contact layer 104, and a back electrode 105. Among them, one of the front electrode 102 and the back electrode 105 is an opaque metal electrode, such as the metal molybdenum electrode of a copper indium gallium selenide (CIGS) cell. In addition, for the laser integration process of conventional thin-film modules, mainly three laser etching processes are used to form the internal connection structure of the cells, namely, a P1 laser groove 106, a P2 laser groove 107, and a P3 laser groove 108; the P1-P3 region is called the dead zone. For a conventional opaque module, the smaller the width of the dead zone, the better (mainly affected by the accuracy of the laser equipment, and currently the minimum is controlled at 100 μm - 120 μm); in addition, the dead zone is opaque (occupied by the opaque cell layer 103 and the back electrode 105), and it makes no contribution to the light-transmitting performance of the module. Therefore, a conventional thin-film photovoltaic module and its internal connection integration process cannot achieve light transmission inside the cell, and are not suitable for application scenarios such as building roofs and curtain walls with daylighting requirements, or automotive sunroofs.

[0003] The current module light-transmitting process is formed by adding a laser or chemical etching process on the basis of the conventional opaque module process. As Figure 2 shown, the light transmission of the module is achieved through a light-transmitting band 111, and the light-transmitting band 111 divides the module into several sub-cells 109. However, this process has the following problems: (1) uneven light transmission; (2) relatively low power generation efficiency of the module. On the one hand, the existing etching process will damage the cell layer at the edge of the etching line or introduce short-circuit points, and the short-circuit points will reduce the efficiency of the module; on the other hand, the module integration process and the light-transmitting process are unreasonable, and the optimization of the module efficiency is not considered; (3) there are appearance and safety hazards in the module. The short-circuit points formed at the edge of the laser etching line will burn through and form burn marks, further reducing the efficiency of the module while affecting the appearance of the module; in addition, during the burning-through process of the short-circuit points, it will further cause the module to spontaneously combust, resulting in safety hazards. (4) The laser etching processing time is long and the processing cost is high.

[0004] Therefore, a solution is needed to improve the light-transmitting uniformity and light-transmitting effect of the module, improve the appearance yield, and at the same time reduce the process time of the module, lower the process cost, and improve the efficiency of the module. Summary of the Invention

[0005] Therefore, the present invention provides a light-transmitting thin-film photovoltaic module and a preparation method thereof, so as to solve the problems in the prior art that the light transmission of the light-transmitting thin-film photovoltaic module is uneven, the power generation efficiency of the module is low, there are appearance and safety hazards in the module, and the preparation process of the module takes a long time and has a high process cost.

[0006] The present invention provides a light-transmitting thin-film photovoltaic module, comprising:

[0007] A glass substrate, a transparent front electrode layer, a battery layer, a back contact layer and a transparent back electrode layer stacked in sequence;

[0008] A plurality of dead zones, each dead zone including a P1 laser groove, a P2 laser groove and a P3 laser groove; the P1 laser groove penetrates through the transparent front electrode layer, the battery layer and the back contact layer; the P2 laser groove penetrates through the battery layer and the back contact layer; the P3 laser groove penetrates through the battery layer, the back contact layer and the transparent back electrode layer;

[0009] Wherein, the P1 laser groove, the P2 laser groove and the P2 laser groove are all light-transmitting regions; the distance between the P1 laser groove and the P2 laser groove is 0; the distance between the P2 laser groove and the P3 laser groove is 0.

[0010] Optionally, the P1 laser groove is filled with a transparent protective paint;

[0011] The P2 laser groove is filled with the same material as the transparent back electrode layer;

[0012] The P3 laser groove is filled with air.

[0013] Optionally, the width of the dead zone is 0.6 mm to 6 mm;

[0014] The width of the P1 laser groove is 0.2 mm to 2 mm;

[0015] The width of the P2 laser groove is 0.2 mm to 2 mm;

[0016] The width of the P3 laser groove is 0.2 mm to 2 mm.

[0017] Optionally, a plurality of parallel first light-transmitting bands, the first light-transmitting bands are formed by connecting the dead zones located on the same straight line;

[0018] A plurality of parallel second light-transmitting bands, the second light-transmitting bands are perpendicular to the first light-transmitting bands;

[0019] The light-transmitting thin-film photovoltaic module further comprises a plurality of sub-cells; the sub-cells are separated by the first light-transmitting bands and the second light-transmitting bands.

[0020] Optionally, the width of the sub-cell is 1 mm to 5 mm;

[0021] The width of the first light-transmitting band is 0.6 mm to 6 mm;

[0022] The width of the second light-transmitting band is 0.6 mm to 6 mm.

[0023] The present invention also provides a method for preparing a light-transmitting thin-film photovoltaic module, comprising the following steps:

[0024] Providing a glass substrate, and sequentially depositing a transparent front electrode layer, a battery layer, and a back contact layer on the glass substrate;

[0025] Forming a P1 laser groove, the P1 laser groove penetrating through the transparent front electrode layer, the battery layer, and the back contact layer;

[0026] Forming a P2 laser groove, the P2 laser groove penetrating through the battery layer and the back contact layer;

[0027] Forming a transparent back electrode layer on a side of the back contact layer facing away from the battery layer;

[0028] Forming a P3 laser groove, the P3 laser groove penetrating through the battery layer, the back contact layer, and the transparent back electrode layer; the P1 laser groove, the P2 laser groove, and the P3 laser groove constitute a dead zone;

[0029] Wherein, the P1 laser groove, the P2 laser groove, and the P3 laser groove are all light-transmitting regions; the distance between the P1 laser groove and the P2 laser groove is 0; the distance between the P2 laser groove and the P3 laser groove is 0.

[0030] Optionally, in the step of forming the P1 laser groove, it includes:

[0031] Using a first laser to etch the transparent front electrode layer, the battery layer, and the back contact layer to form the P1 laser groove;

[0032] Filling the P1 laser groove with a transparent protective paint.

[0033] Optionally, in the step of forming the P2 laser groove, it includes:

[0034] Using a second laser to etch the battery layer and the back contact layer to form the P2 laser groove;

[0035] In the step of forming the transparent back electrode layer on a side of the back contact layer facing away from the battery layer, the transparent back electrode layer also extends into and fills the P2 laser groove.

[0036] Optionally, in the step of forming the P3 laser groove, it includes:

[0037] The third laser is used to etch the battery layer, the back contact layer, and the transparent back electrode layer to form the P3 laser grooves.

[0038] Optionally, the wide spot diameter of the first laser is 0.2 mm to 2 mm, and the wavelength is 1064 nm;

[0039] The wide spot diameter of the second laser is 0.2 mm to 2 mm, and the wavelength is 532 nm;

[0040] The wide spot diameter of the third laser is 0.2 mm to 2 mm, and the wavelength is 532 nm.

[0041] Optionally, after the step of forming the P3 laser grooves, the following steps are further included:

[0042] The fourth laser is used to etch the battery layer, the back contact layer, and the transparent back electrode layer to form the second light-transmitting band;

[0043] The dead zones located on the same straight line are connected to form the first light-transmitting band, and the second light-transmitting band is perpendicular to the first light-transmitting band.

[0044] The technical solution of the present invention has the following advantages:

[0045] (1) For the light-transmitting thin-film photovoltaic module provided by the present invention, by using the transparent front electrode layer and the transparent back electrode layer, and setting the light-transmitting P1 laser grooves, P2 laser grooves, and P3 laser grooves to have a 0-spacing and ensuring that they do not overlap with each other. On the one hand, the light-transmitting uniformity and light-transmitting effect of the module can be improved, the appearance yield can be increased, and at the same time, the process time of the module can be reduced and the process cost can be lowered; on the other hand, the P1-P3 laser grooves are jointly used as the dead zones, the width of the dead zones is increased, and the width of the sub-cells is reduced, which can improve the efficiency of the module.

[0046] (2) For the light-transmitting thin-film photovoltaic module provided by the present invention, by using the transparent front electrode layer and the transparent back electrode layer, and setting the light-transmitting P1 laser grooves, P2 laser grooves, and P3 laser grooves to have a 0-spacing, and at the same time increasing the P1 laser grooves, P2 laser grooves, and P3 laser grooves to form the first light-transmitting band; the light transmission of the module is jointly realized by the first light-transmitting band and the second light-transmitting band perpendicular to the first light-transmitting band. On the one hand, the light-transmitting uniformity and light-transmitting effect of the module can be improved; on the other hand, the light transmittance of the module is jointly realized by the second light-transmitting band and the first light-transmitting band, and the formation of the first light-transmitting band is derived from the P1 / P2 / P3 laser etching process of the conventional opaque module (only increasing the spot diameter without increasing the additional processing time); the number and time of laser etching perpendicular to P1 / P2 / P3 can be reduced by half. Therefore, the processing time of the light-transmitting module can be reduced, and further the cost of the module can be lowered.

[0047] (3) The transparent thin-film photovoltaic module provided by the present invention optimizes the integrated process of the transparent component and improves the component efficiency by increasing the dead zone width (the width of the P1 / P2 / P3 laser grooves is 0.6 mm to 6 mm) and reducing the sub-cell width (1 mm to 5 mm) while achieving light transmission through the P1 / P2 / P3 laser grooves.

[0048] (4) The preparation method of the transparent thin-film photovoltaic module provided by the present invention is used to prepare the transparent thin-film photovoltaic module provided by the present invention. By using a transparent front electrode layer and a transparent back electrode layer, setting the distance between the light-transmitting P1 laser groove, P2 laser groove, and P3 laser groove to 0 and ensuring that they do not overlap with each other, on the one hand, it can improve the light transmission uniformity and light transmission effect of the component, improve the appearance yield, and at the same time reduce the process time of the component and lower the process cost; on the other hand, taking the P1 - P3 laser grooves together as the dead zone, increasing the width of the dead zone and reducing the sub-cell width can improve the efficiency of the component.

[0049] (5) The preparation method of the transparent thin-film photovoltaic module provided by the present invention adopts a transparent back electrode structure. The transparent back electrode layer is a transparent conductive oxide, similar to the transparent front electrode layer, so that in the process of forming the second light-transmitting band, the fourth laser will not be absorbed by the transparent back electrode layer (mainly transmitted). Therefore, the transparent conductive film at the position of the first light-transmitting band will not be gasified and recondensed, and no short-circuit points will be introduced (this is different from the conventional metal film layer. The metal will absorb the energy of the fourth laser, be gasified, and recondense on the inner wall of the laser groove to form short-circuit points). While further improving the component efficiency, it eliminates the further influence of component burn-through and burn marks on the component efficiency and the influence on the component appearance, and can also eliminate the risk of component spontaneous combustion caused by burn marks. Description of the Drawings

[0050] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings required for the description of the specific embodiments or the prior art. Obviously, the following drawings are some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0051] Figure 1 It is a schematic structural diagram of a conventional thin-film photovoltaic module in the prior art;

[0052] Figure 2 It is a schematic top view of the structure of a conventional thin-film photovoltaic module in the prior art;

[0053] Figure 3 It is a schematic structural diagram of a transparent thin-film photovoltaic module according to an embodiment of the present invention;

[0054] Figure 4 Schematic top view of the structure of a light-transmitting thin-film photovoltaic module according to an embodiment of the present invention;

[0055] Figure 5 Schematic diagram of the current path inside a light-transmitting thin-film photovoltaic module according to an embodiment of the present invention;

[0056] Figure 6 Schematic flow chart of a preparation method of a light-transmitting thin-film photovoltaic module according to an embodiment of the present invention;

[0057] Figure 7 Conventional preparation process of a cadmium telluride thin-film light-transmitting module in the prior art of the comparative example;

[0058] Figure 8 Schematic specific flow chart of a preparation method of a light-transmitting thin-film photovoltaic module according to an embodiment of the present invention.

[0059] Explanation of reference numerals:

[0060] 1 - Glass substrate; 2 - Transparent front electrode layer; 3 - Cell layer; 4 - Back contact layer; 5 - Transparent back electrode layer; 6 - P1 laser groove; 7 - P2 laser groove; 8 - P3 laser groove; 9 - Sub-cell; 10 - First light-transmitting band; 11 - Second light-transmitting band; 101 - Glass substrate; 102 - Front electrode layer; 103 - Cell layer; 104 - Back contact layer; 105 - Back electrode layer; 106 - P1 laser groove; 107 - P2 laser groove; 108 - P3 laser groove; 109 - Sub-cell; 110 - Position corresponding to the dead zone; 111 - Light-transmitting band. Detailed implementation manners

[0061] To solve the problems in the prior art that the light transmission of the light-transmitting thin-film photovoltaic module is uneven, the power generation efficiency of the module is low, there are appearance and safety hazards in the module, the preparation process time of the module is long, and the process cost is high, the present invention provides a light-transmitting thin-film photovoltaic module, including: a glass substrate, a transparent front electrode layer, a cell layer, a back contact layer, and a transparent back electrode layer stacked in sequence; a plurality of dead zones, each dead zone including a P1 laser groove, a P2 laser groove, and a P3 laser groove; the P1 laser groove penetrates through the transparent front electrode layer, the cell layer, and the back contact layer; the P2 laser groove penetrates through the cell layer and the back contact layer; the P3 laser groove penetrates through the cell layer, the back contact layer, and the transparent back electrode layer; wherein, the P1 laser groove, the P2 laser groove, and the P2 laser groove are all light-transmitting regions; the distance between the P1 laser groove and the P2 laser groove is 0; the distance between the P2 laser groove and the P3 laser groove is 0.

[0062] The present invention also provides a method for preparing a light-transmissive thin-film photovoltaic module, comprising the following steps: providing a glass substrate, and sequentially depositing a transparent front electrode layer, a battery layer, and a back contact layer on the glass substrate; forming a P1 laser groove that penetrates through the transparent front electrode layer, the battery layer, and the back contact layer; forming a P2 laser groove that penetrates through the battery layer and the back contact layer; forming a transparent back electrode layer on a side of the back contact layer facing away from the battery layer; forming a P3 laser groove that penetrates through the battery layer, the back contact layer, and the transparent back electrode layer; the P1 laser groove, the P2 laser groove, and the P3 laser groove constitute a dead zone; wherein, the P1 laser groove, the P2 laser groove, and the P2 laser groove are all light-transmissive regions; the distance between the P1 laser groove and the P2 laser groove is 0; the distance between the P2 laser groove and the P3 laser groove is 0.

[0063] The technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without making creative efforts shall fall within the protection scope of the present invention. In the description of the present invention, it should be noted that the terms "first", "second", and "third" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance.

[0064] Example 1

[0065] Reference Figure 3 , this embodiment provides a light-transmissive thin-film photovoltaic module, comprising:

[0066] A glass substrate 1, a transparent front electrode layer 2, a battery layer 3, a back contact layer 4, and a transparent back electrode layer 5 stacked in sequence;

[0067] A plurality of dead zones, each dead zone including a P1 laser groove 6, a P2 laser groove 7, and a P3 laser groove 8; the P1 laser groove 6 penetrates through the transparent front electrode layer 2, the battery layer 3, and the back contact layer 4; the P2 laser groove 7 penetrates through the battery layer 3 and the back contact layer 4; the P3 laser groove 8 penetrates through the battery layer 3, the back contact layer 4, and the transparent back electrode layer 5;

[0068] Wherein, the P1 laser groove 6, the P2 laser groove 7, and the P3 laser groove 8 are all light-transmissive regions; the distance between the P1 laser groove 6 and the P2 laser groove 7 is 0; the distance between the P2 laser groove 7 and the P3 laser groove 8 is 0.

[0069] The transparent thin-film photovoltaic module provided by this embodiment, by using a transparent front electrode layer and a transparent back electrode layer, setting the spacing between the light-transmitting P1 laser grooves, P2 laser grooves, and P3 laser grooves to 0, and ensuring that they do not overlap with each other. On the one hand, it can improve the light-transmitting uniformity and light-transmitting effect of the module, improve the appearance yield, and at the same time reduce the process time of the module and lower the process cost; on the other hand, using the P1 - P3 laser grooves together as the dead zone increases the width of the dead zone and reduces the width of the sub-cell, which can improve the efficiency of the module.

[0070] Further, in this embodiment, the P1 laser groove 6 is filled with transparent protective paint;

[0071] The P2 laser groove 7 is filled with the same material as the transparent back electrode layer 5;

[0072] The P3 laser groove 8 is filled with air.

[0073] In specific implementation, the P1 laser groove 6 is filled with transparent protective paint, and both the upper and lower parts of the P1 laser groove 6 are transparent electrodes, so the light-transmitting effect of the P1 laser groove 6 is better; the P2 laser groove 7 is filled with the same material as the transparent back electrode layer 5, and the P3 laser groove 8 is filled with air, so the light-transmitting effects of the P2 laser groove 7 and the P3 laser groove 8 are also relatively good. In addition, the spacing between the P1 laser groove 6 and the P2 laser groove 7 is 0, and the spacing between the P2 laser groove 7 and the P3 laser groove 8 is 0. Thus, the entire dead zone is a light-transmitting area with a relatively high light-transmitting effect.

[0074] Further, in this embodiment, the width of the dead zone is 0.6 mm - 6 mm;

[0075] The width of the P1 laser groove 6 is 0.2 mm - 2 mm;

[0076] The width of the P2 laser groove 7 is 0.2 mm - 2 mm;

[0077] The width of the P3 laser groove 8 is 0.2 mm - 2 mm.

[0078] In specific implementation, this embodiment optimizes the integrated process of the light-transmitting component and improves the component efficiency by increasing the width of the dead zone (the width of the P1 / P2 / P3 laser grooves is 0.6 mm - 6 mm) while realizing the light transmission of the P1 / P2 / P3 laser grooves.

[0079] This embodiment uses the P1 / P2 / P3 regions to form light transmission and increases the width and area ratio of the P1 / P2 / P3 regions. At this time, the P1, P2, and P3 laser lines can reach the mm level, and such a width is much larger than the position control accuracy of the μm level of the laser process. Therefore, it is possible to achieve a situation where the P1 / P2 and P2 / P3 spacings are 0 μm without the P1 / P2 and P2 / P3 overlapping.

[0080] Further, in this embodiment, as Figure 4 shown, it further includes:

[0081] A plurality of parallel first light-transmitting bands 10, and the first light-transmitting bands 10 are formed by connecting the dead zones located on the same straight line;

[0082] A plurality of parallel second light-transmitting bands 11, and the second light-transmitting bands 11 are perpendicular to the first light-transmitting bands 10;

[0083] The light-transmitting thin-film photovoltaic module further includes a plurality of sub-cells 9; the sub-cells 9 are separated by the first light-transmitting bands 10 and the second light-transmitting bands 11.

[0084] During specific implementation, as Figure 4 shown, the first light-transmitting bands 10 and the second light-transmitting bands 11 divide the module into a plurality of sub-cells 9. The entire module can be made light-transmitting through the first light-transmitting bands 10 and the second light-transmitting bands 11, and the light-transmitting properties of the first light-transmitting bands 10 and the second light-transmitting bands 11 are uniform, with good light-transmitting effects and no short-circuit points.

[0085] The light-transmitting thin-film photovoltaic module provided in this embodiment uses a transparent front electrode layer and a transparent back electrode layer, sets the light-transmitting P1 laser grooves, P2 laser grooves, and P3 laser grooves to a 0-spacing, and at the same time increases the P1 laser grooves, P2 laser grooves, and P3 laser grooves to form the first light-transmitting bands; the light-transmitting of the module is jointly realized by the first light-transmitting bands and the second light-transmitting bands perpendicular to the first light-transmitting bands; on the one hand, the light-transmitting uniformity and light-transmitting effect of the module can be improved; on the other hand, the light-transmitting rate of the module is jointly realized by the second light-transmitting bands and the first light-transmitting bands, and the formation of the first light-transmitting bands is derived from the P1 / P2 / P3 laser etching process of a conventional opaque module (only increasing the spot diameter without increasing additional processing time); the number and time of laser etching perpendicular to P1 / P2 / P3 can be reduced by half, so the processing time of the light-transmitting module can be reduced, and thus the cost of the module can be reduced.

[0086] Further, in this embodiment, the width of the sub-cell 9 is 1 mm to 5 mm;

[0087] The width of the first light-transmitting band 10 is 0.6 mm to 6 mm;

[0088] The width of the second light-transmitting band 11 is 0.6 mm to 6 mm.

[0089] During specific implementation, the current path in the light-transmitting thin-film photovoltaic module is Figure 5The arrow direction in [description]. On this current path, the main resistance comes from the transparent front electrode layer 2 and the transparent back electrode layer 5 (the resistivity of the oxide transparent electrode material is high compared to that of metals). Therefore, in the design, the transmission path of the current in the transparent front electrode layer 2 and the transparent back electrode layer 5 should be minimized as much as possible (the width of the sub-cell 9 is in the millimeter range and the thickness is in the micrometer range, and the transmission path is mainly along the width direction of the sub-cell), that is, the width of the sub-cell 9 is reduced.

[0090] For conventional opaque components, reducing the width of the sub-cell will also reduce the series resistance (Rs) of the battery, increase the fill factor (FF) of the battery, and increase the power generation of the battery; however, as the width of the sub-cell decreases, the proportion of the P1 - P3 dead zone area increases (the minimum width of the dead zone is about 150 μm - 200 μm, and it cannot be further reduced at present, that is, the width of the dead zone is regarded as fixed), resulting in a decrease in the battery current and power; therefore, there is currently a relatively optimal value for the width of the sub-cell (between 6 mm and 8 mm) (in the present invention, the width of the sub-cell is 1 mm - 5 mm, and 1 mm is considered for high light transmittance such as 90% and above).

[0091] Therefore, the light-transmissive thin-film photovoltaic module provided in this embodiment improves the module efficiency while achieving light transmission in the P1 - P3 dead zone by reducing the width of the sub-cell 9 and simultaneously increasing the light-transmissive area of the P1 - P3 dead zone, which is not available in the conventional light-transmissive module process.

[0092] In addition, in this embodiment, the second light-transmissive band and the first light-transmissive band are comparable in width, which can ensure that the formed sub-cell is approximately square in shape, thereby improving the light-transmissive uniformity and light-transmissive effect of the module.

[0093] Embodiment 2

[0094] Reference Figure 6 , the present invention also provides a method for manufacturing a light-transmissive thin-film photovoltaic module for manufacturing the light-transmissive thin-film photovoltaic module of the above Embodiment 1. The method includes the following steps:

[0095] S201, providing a glass substrate, and sequentially depositing a transparent front electrode layer, a battery layer, and a back contact layer on the glass substrate;

[0096] S202, forming a P1 laser groove, and the P1 laser groove penetrates through the transparent front electrode layer, the battery layer, and the back contact layer;

[0097] S203, forming a P2 laser groove, and the P2 laser groove penetrates through the battery layer and the back contact layer;

[0098] S204, forming a transparent back electrode layer on the side of the back contact layer facing away from the battery layer;

[0099] S205, form the P3 laser groove, where the P3 laser groove penetrates through the battery layer, the back contact layer, and the transparent back electrode layer; the P1 laser groove, the P2 laser groove, and the P3 laser groove constitute the dead zone;

[0100] Among them, the P1 laser groove, the P2 laser groove, and the P2 laser groove are all light-transmitting regions; the distance between the P1 laser groove and the P2 laser groove is 0; the distance between the P2 laser groove and the P3 laser groove is 0.

[0101] The light-transmitting thin-film photovoltaic module provided in this embodiment is used to prepare the light-transmitting thin-film photovoltaic module provided in the present invention. By using a transparent front electrode layer and a transparent back electrode layer, setting the distance between the light-transmitting P1 laser groove, P2 laser groove, and P3 laser groove to 0, and ensuring that they do not overlap with each other. On the one hand, it can improve the light-transmitting uniformity and light-transmitting effect of the module, improve the appearance yield, and at the same time reduce the process time of the module and lower the process cost; on the other hand, using the P1 - P3 laser grooves together as the dead zone increases the width of the dead zone and reduces the width of the sub-cell, which can improve the efficiency of the module.

[0102] Further, in some embodiments, in the step of forming the P1 laser groove, it includes:

[0103] Use a first laser to etch the transparent front electrode layer, the battery layer, and the back contact layer to form the P1 laser groove;

[0104] Fill the P1 laser groove with a transparent protective paint.

[0105] Further, in some embodiments, in the step of forming the P2 laser groove, it includes:

[0106] Use a second laser to etch the battery layer and the back contact layer to form the P2 laser groove;

[0107] In the step of forming the transparent back electrode layer on the side of the back contact layer facing away from the battery layer, the transparent back electrode layer also extends into and fills the P2 laser groove.

[0108] Further, in some embodiments, in the step of forming the P3 laser groove, it includes:

[0109] Use a third laser to etch the battery layer, the back contact layer, and the transparent back electrode layer to form the P3 laser groove.

[0110] Further, in some embodiments, the wide spot diameter of the first laser is 0.2 mm - 2 mm, and the wavelength is 1064 nm;

[0111] The wide spot diameter of the second laser is 0.2 mm to 2 mm, and the wavelength is 532 nm;

[0112] The wide spot diameter of the third laser is 0.2 mm to 2 mm, and the wavelength is 532 nm.

[0113] In one example, the wide spot diameter of the first laser is 0.2 mm, and the wavelength is 1064 nm; the wide spot diameter of the second laser is 0.6 mm, and the wavelength is 532 nm; the wide spot diameter of the third laser is 0.2 mm, and the wavelength is 532 nm.

[0114] Furthermore, in some embodiments, after the step of forming the P3 laser groove, the following is further included:

[0115] Etching the battery layer, the back contact layer, and the transparent back electrode layer with a fourth laser to form a second light-transmitting band;

[0116] The dead zones located on the same straight line are connected to form a first light-transmitting band, and the second light-transmitting band is perpendicular to the first light-transmitting band.

[0117] In specific implementation, the width of the first light-transmitting band is 0.6 mm to 6 mm; the second light-transmitting band is formed by etching the battery layer, the back contact layer, and the transparent back electrode layer with a fourth laser, and the width of the second light-transmitting band is 0.6 mm to 6 mm; the second light-transmitting band and the first light-transmitting band are comparable in width, and it is ensured that the formed sub-battery (with a width of 1 mm to 5 mm) is approximately square in shape, so that the light-transmitting uniformity and light-transmitting effect of the component are significantly improved.

[0118] For a conventional light-transmitting component, during the processing of the second light-transmitting band, the laser will also act on Figure 2 the metal film layer at position 110 (specifically, inside the P2 laser groove). Since the metal film has a high absorption coefficient for the laser, gasification and recondensation will occur, generating a short-circuit point at position 110, reducing the efficiency of the component, and there are long-term safety hazards: the short-circuit point will burn through during the long-term use of the component, further reducing the power generation efficiency of the component while generating black burn marks and affecting the appearance of the component; in addition, the component will also catch fire during the formation of the burn marks.

[0119] The preparation method of the light-transmissive thin-film photovoltaic module provided in this embodiment adopts a transparent back electrode structure. The transparent back electrode layer is a transparent conductive oxide, similar to the transparent front electrode layer. In the process of forming the second light-transmissive band, the fourth laser will not be absorbed (mainly transmitted) by the transparent back electrode layer. Therefore, the transparent conductive film at the position of the first light-transmissive band will not be vaporized and recondensed, and no short-circuit points will be introduced (this is different from the conventional metal film layer. The metal will absorb the energy of the fourth laser, be vaporized, and recondense on the inner wall of the laser groove, forming short-circuit points). While further improving the efficiency of the module, it eliminates the further influence of module burnout and burn marks on the module efficiency and the influence on the appearance of the module, and can also eliminate the risk of spontaneous combustion of the module caused by burn marks.

[0120] To verify the effectiveness of the solution in this embodiment, the present invention also provides a set of comparative examples and Example 3 to compare the differences between the conventional component preparation process and the specific preparation method of the light-transmissive thin-film photovoltaic module provided by the present invention.

[0121] Comparative Example

[0122] The comparative example is the conventional preparation process and method of cadmium telluride thin-film light-transmissive components in the prior art, referring to Figure 7 , including steps S201 - S211:

[0123] S201, Provide a glass substrate 101.

[0124] S202, Deposit the transparent front electrode layer 102 / cell layer 103 in sequence. Deposit a 600-nm-thick FTO transparent front electrode layer 102 and a 3-μm-thick CdSe / CdTe cell layer 103 on the glass substrate 1 in sequence, as Figure 1 shown.

[0125] S203, CdCl 2 Heat treatment / acid surface treatment. Perform a 430°C CdCl 2 heat treatment and a 1% dilute hydrochloric acid surface treatment on the cell layer 103.

[0126] S204, P1 laser (spot 30 μm). Use a laser with a wavelength of 1064 nm for P1 laser etching to etch the transparent front electrode layer 102 and the cell layer 103, and the width of the formed P1 laser groove 106 is 30 μm.

[0127] S205, Photoresist filling. Fill the P1 laser groove 106 with an insulating photoresist.

[0128] S206, Back contact layer deposition / annealing. Deposit a ZnTe:Cu back contact layer 104 and perform a 250°C annealing treatment.

[0129] S207, P2 Laser (spot size 40μm). Use a 532nm laser for P2 laser etching to etch the cell layer 103 and the back contact layer 104, forming P2 laser grooves 107 with a width of 40μm. P2 is parallel to P1, and the P1 / P2 spacing is 20μm.

[0130] S208, Deposition of the metal back electrode layer. Deposit a 200Mo / Al back electrode layer 105, which covers the surface of the cell layer 3 and fills the P2 laser grooves 7.

[0131] S209, P3 Laser (spot size 40μm). Use 532nm for P3 laser etching to etch the metal back electrode layer 105, forming P3 laser grooves 108 with a width of 40μm. P3 is parallel to P2, and the P2 / P3 spacing is 20μm.

[0132] S210, Laser edge cleaning. Perform laser edge removal to complete the preparation of a conventional module; among them, the dead zone width of P1 - P3 is 170μm, and the width of the sub - cell 109 is 7mm.

[0133] S211, Vertical P1 / P2 / P3 etching (spot size 1mm). Along the direction perpendicular to P1 / P2 / P3, use a 532nm laser with a 1mm spot diameter to etch the cell layer 103, the back contact layer 104, and the back electrode layer 105; after multiple etchings, form a light - transmitting band 111 with a width of 2mm, and the width between the light - transmitting bands 111 is positioned at 9mm.

[0134] In the preparation scheme of the conventional module process of the comparative example, the laser etching processing time of a single - chip module is about 5 minutes, with a long processing time and high cost; the final effect is as Figure 2 shown. The light transmission of the module relies on a single light - transmitting band 111, and the light - transmission uniformity and effect are relatively poor.

[0135] In addition, the light transmission of the module is formed by introducing subsequent laser etching perpendicular to the P1 / P2 / P3 direction on the basis of the conventional opaque module process. The power of the light - transmitting module is related to the etched area. Theoretically, taking the power of a conventional opaque module as 120W as an example, when etching about 20% of the cell area (module light - transmission rate 20%), the theoretical power of the light - transmitting module is 96W; however, further considering the influence of the laser on the metal back electrode layer 105 at position 110 (specifically in the P2 laser groove) during the processing of the light - transmitting band 111, which causes the metal back electrode layer 105 to vaporize and re - condense, introducing short - circuit points in the laser groove, will further reduce the module power by 3W - 5W; moreover, the positions of these short - circuit points in the module will have the problem of burning through during subsequent use, further damaging the cell layer and causing a 3W - 5W reduction in the module power. The resulting black burn marks also affect the appearance of the module; finally, there is also a risk of causing the module to self - ignite during the burning - through process of these short - circuit points.

[0136] Example 3

[0137] Example 3 is a specific preparation method of a light-transmitting thin-film photovoltaic module provided by the present invention. Refer to Figure 8 , and it includes steps S301 - S311:

[0138] S301, provide a glass substrate 1.

[0139] S302, deposit a transparent front electrode layer / cell layer in sequence. Deposit an FTO transparent front electrode layer 2 with a thickness of 600 nm and a CdSe / CdTe cell layer 3 with a thickness of 3 μm on the glass substrate 1 in sequence, as Figure 3 shown.

[0140] S303, CdCl 2 heat treatment / acid surface treatment. Perform a 430 °C CdCl 2 heat treatment and a 1% dilute hydrochloric acid surface treatment on the cell layer 3.

[0141] S304, back contact layer deposition / annealing. Deposit a ZnTe:Cu back contact layer 4 and perform a 250 °C annealing treatment.

[0142] S305, P1 laser (spot size 0.2 mm). Perform P1 laser etching using a 1064 nm wavelength laser with a wide spot diameter (0.2 mm) to etch the transparent front electrode layer 2, the cell layer 3, and the back contact layer 4, and the formed P1 laser groove 6 has a width of 0.2 mm.

[0143] S306, photoresist filling. Fill the P1 laser groove 6 with an insulating photoresist.

[0144] S307, P2 laser (spot size 0.6 mm). Perform P2 laser etching using a 532 nm laser with a wide spot diameter (0.6 mm) to etch the cell layer 3 and the back contact layer 4, and the formed P2 laser groove 7 has a width of 0.6 mm. P2 is parallel to P1, and the distance between P1 / P2 is 0.

[0145] S308, transparent back electrode layer deposition. Deposit an ITO electrode with a thickness of 200 nm, and the ITO transparent back electrode layer covers the surface of the cell layer 3 and fills the P2 laser groove 7.

[0146] S309, P3 laser (spot size 0.2 mm). Perform P3 laser etching using a 532 nm laser with a wide spot diameter (0.2 mm) to etch the cell layer 3, the back contact layer 4, and the ITO transparent back electrode layer 5, and the formed P3 laser groove 7 has a width of 0.2 mm. P3 is parallel to P2, and the distance between P2 / P3 is 0.

[0147] S310, Laser edge removal. Perform laser edge removal to complete the preparation of conventional components; among them, the dead zone widths of P1 - P3 are 1 mm, forming the first light transmission band 10, and the width of the sub - cell 9 is 4.2 mm.

[0148] S311, Vertical P1 / P2 / P3 etching (spot diameter 1 mm). Along the direction perpendicular to P1 / P2 / P3, use a 532 - nm laser with a 1 - mm spot diameter to etch the cell layer 3, the back contact layer 4, and the transparent back electrode layer 5, and form a second light transmission band 11 with a width of 1 mm. The width between the first light transmission band 10 and the second light transmission band 11 is 4.2 mm.

[0149] In the specific preparation method of the light - transmissive thin - film photovoltaic module provided in this embodiment, the laser etching time for forming the first light transmission band 10 of a single - piece module is about 2.5 min (since the first light transmission band 10 is formed by the P1 - P3 dead zone, the area of the second light transmission band 11 can be reduced by half), the processing time is shortened by nearly half, and the cost is reduced; the final effect is as Figure 4 shown. The light transmission of the module depends on the first light transmission band 10 and the second light transmission band 11, and the light - transmission uniformity and effect of the module are improved. In terms of the power generation of the module, since about 20% of the area of the battery region is etched, the power of the module is reduced by 20%, from 120 W to 96 W; however, different from the comparative example, the light - transmission area (etching area) includes the first light transmission band 10, that is, the area of the wide P1 - P3 dead zone. Correspondingly, the width of the sub - cell 9 is reduced from 7 mm to 4.2 mm; when the width of the sub - cell 9 decreases, the series resistance of the battery decreases and the fill factor increases, and the power generation of the module increases by 5 W - 10 W; therefore, under the condition of the same light - transmission area (etching area), the power generation of the light - transmissive module in Embodiment 3 is improved. Finally, during the process of forming the first light transmission band 10 by laser etching, since the P2 laser groove 7 is filled with the transparent back electrode layer 5, the laser passes through the transparent back electrode layer 5 without being absorbed. Therefore, the transparent back electrode layer 5 will not be vaporized and re - condensed, avoiding the formation of short - circuit points in the laser - etched groove and a power loss of 3 W - 5 W; without short - circuit points, subsequent problems such as the short - circuit point burning through, burning spots, and the impact on the appearance of the module, as well as the potential self - ignition risk of the module are avoided.

[0150] Obviously, the above - mentioned embodiments are only examples clearly described, rather than limitations on the implementation manners. For those of ordinary skill in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation manners here. And the obvious changes or modifications derived therefrom are still within the protection scope of this invention.

Claims

1. A light-transmitting thin-film photovoltaic module, characterized in that: include: A glass substrate, a transparent front electrode layer, a battery layer, a back contact layer and a transparent back electrode layer stacked in sequence; A plurality of dead zones, each of which comprises a P1 laser groove, a P2 laser groove and a P3 laser groove; the P1 laser groove penetrates the transparent front electrode layer, the battery layer and the back contact layer; the P2 laser groove penetrates the battery layer and the back contact layer; the P3 laser groove penetrates the battery layer, the back contact layer and the transparent back electrode layer; Wherein, the P1 laser groove, the P2 laser groove and the P3 laser groove are all light-transmitting areas; the spacing between the P1 laser groove and the P2 laser groove is 0; the spacing between the P2 laser groove and the P3 laser groove is 0; Wherein, the width of each dead zone is 0.6 mm to 6 mm; The width of the P1 laser groove is 0.2 mm to 2 mm; The width of the P2 laser groove is 0.2 mm to 2 mm; The width of the P3 laser groove is 0.2 mm to 2 mm.

2. The light-transmitting thin-film photovoltaic module according to claim 1, characterized in that: The P1 laser groove is filled with a transparent protective paint; The P2 laser groove is filled with the same material as the transparent back electrode layer; The P3 laser tank is filled with air.

3. The light-transmitting thin-film photovoltaic module according to claim 1, characterized in that: Also includes: A plurality of parallel first light-transmitting strips, wherein the first light-transmitting strips are formed by connecting the dead zones located on the same straight line; A plurality of parallel second light-transmitting strips, wherein the second light-transmitting strips are perpendicular to the first light-transmitting strips; The light-transmitting thin-film photovoltaic assembly further includes a plurality of sub-cells; the sub-cells are separated by the first light-transmitting strip and the second light-transmitting strip.

4. The light-transmitting thin-film photovoltaic module according to claim 3, characterized in that: The width of the sub-cell is 1 mm to 5 mm; The width of the first light-transmitting band is 0.6 mm to 6 mm; The width of the second light-transmitting band is 0.6 mm to 6 mm.

5. A method for preparing a light-transmitting thin-film photovoltaic module, characterized in that: The following steps are involved: Providing a glass substrate, on which a transparent front electrode layer, a battery layer and a back contact layer are sequentially deposited; forming a P1 laser groove, wherein the P1 laser groove penetrates the transparent front electrode layer, the battery layer and the back contact layer; forming a P2 laser groove, wherein the P2 laser groove penetrates the battery layer and the back contact layer; forming a transparent back electrode layer on a side of the back contact layer facing away from the battery layer; A P3 laser groove is formed, wherein the P3 laser groove penetrates the battery layer, the back contact layer and the transparent back electrode layer; the P1 laser groove, the P2 laser groove and the P3 laser groove constitute a dead zone; Among them, the P1 laser groove, the P2 laser groove and the P3 laser groove are all light-transmitting areas; the spacing between the P1 laser groove and the P2 laser groove is 0; the spacing between the P2 laser groove and the P3 laser groove is 0.

6. The method for preparing a light-transmitting thin-film photovoltaic module according to claim 5, characterized in that: The step of forming the P1 laser groove includes: Using a first laser to etch the transparent front electrode layer, the battery layer and the back contact layer to form the P1 laser groove; The P1 laser groove is filled with a transparent protective lacquer.

7. The method for preparing a light-transmitting thin-film photovoltaic module according to claim 6, characterized in that: The step of forming the P2 laser groove includes: Using a second laser to etch the battery layer and the back contact layer to form the P2 laser groove; In the step of forming a transparent back electrode layer on the side of the back contact layer facing away from the battery layer, the transparent back electrode layer also extends into and fills the P2 laser groove.

8. The method for preparing a light-transmitting thin-film photovoltaic module according to claim 7, characterized in that: The step of forming the P3 laser groove includes: The battery layer, the back contact layer and the transparent back electrode layer are etched with a third laser to form the P3 laser groove.

9. The method for preparing a light-transmitting thin-film photovoltaic module according to claim 8, characterized in that: The first laser has a wide spot diameter of 0.2 mm to 2 mm and a wavelength of 1064 nm; The wide spot diameter of the second laser is 0.2 mm to 2 mm, and the wavelength is 532 nm; The third laser has a wide spot diameter of 0.2 mm to 2 mm and a wavelength of 532 nm.

10. The method for preparing a light-transmitting thin-film photovoltaic module according to claim 5, characterized in that: After the step of forming the P3 laser groove, the method further includes: Using a fourth laser to etch the battery layer, the back contact layer and the transparent back electrode layer to form a second light-transmitting band; The dead zones located on the same straight line are connected to form a first light-transmitting band, and the second light-transmitting band is perpendicular to the first light-transmitting band.

Images