A dam encapsulation structure, dam encapsulation method, camera module and electronic product

Abstract

The present application discloses a dam potting structure, a dam potting method, a camera module and an electronic product, comprising a first substrate, a photosensitive area being arranged on the upper surface of the first substrate; a second substrate, the second substrate surrounding the outer side of the first substrate; a first dam, the first dam being formed on the upper surface of the first substrate, the first dam at least surrounding the photosensitive area; a second dam, the second dam being formed on the upper surface of the second substrate, a first potting cavity being formed between the first dam and the second dam; a conductive structure, the conductive structure being located in the first potting cavity and connecting the first substrate and the second substrate; a first potting structure, the first potting structure being suitable for being poured and cured in the first potting cavity, the first potting structure being suitable for at least covering the conductive structure; a tension reduction area being formed on at least one side of the side walls of the first dam and the second dam located in the first potting cavity, the horizontal cross-sectional area of ​​the first potting cavity increasing from the lower end to the upper end of the tension reduction area, and the present application has the characteristic of stable structure.

Description

Technical Field

[0001] The present application relates to the technical field of optical imaging equipment, and in particular to a dam encapsulation structure, a dam encapsulation method, a camera module and an electronic product. Background Art

[0002] Generally speaking, many electronic products (such as cameras, driving recorders, smart phones, tablet computers, or laptop computers and other electronic devices) have camera modules, and the camera modules can obtain images outside the electronic products.

[0003] Currently, electronic products on the market are developing in the direction of being thinner and smaller, which makes the space for camera modules smaller and smaller. For example, the length of the circuit board used in smart phones, tablets, or laptops is not limited in the X-axis direction, but the width in the Y-axis direction is limited by the electronic device shell. Similarly, the width of the base in the Y-axis direction is also subject to the same limitation. Therefore, camera modules are now constantly being developed in the direction of miniaturized packaging technology.

[0004] In the technical route of miniaturized packaging, it is necessary to ensure the miniaturization of the module, and miniaturized packaging needs to reduce the impact of the packaging process on the photosensitive chip, and cannot cause an increase in chip stains or warping of the photosensitive chip.

[0005] In order to protect the chip of the image sensor and keep it working stably and maintaining good sensing sensitivity for a long time, it is usually necessary to design a stable and reliable packaging structure. When packaging the image sensor, on the one hand, the photosensitive area of ​​the sensing chip must be protected; on the other hand, the electrical connection lines between the sensor and the external circuit must be protected to prevent external factors from affecting the normal acquisition and processing of the sensing signal.

[0006] However, the existing image sensor packaging structure has the following defects: during the packaging process, the structure near the lead is relatively complex. Since the filling glue has a large viscosity, after the filling glue is injected vertically above the lead, the filling glue will be diverted after contacting the complex structure at the lead. In the direction of the lead facing away from the filling injection, the filling glue may not be able to completely adhere to the lead, which will easily lead to the formation of a cavity or multiple cavities around the lead, causing the filling glue to fail to completely cover and fit the lead, making it possible for the lead to vibrate in the cavity during use and break. Summary of the invention

[0007] One purpose of the present application is to provide a dam encapsulation structure, a dam encapsulation method, a camera module and an electronic product with a stable structure, a good filling effect and a smooth surface.

[0008] In order to achieve the above objectives, the technical solution adopted in this application is: a dam encapsulation structure, comprising:

[0009] A first substrate, wherein a photosensitive area is disposed on an upper surface of the first substrate;

[0010] A second substrate, the second substrate surrounds the outer side of the first substrate;

[0011] A first dam is formed on the upper surface of the first substrate, and the first dam at least surrounds the photosensitive area;

[0012] a second dam, wherein the second dam is formed on an upper surface of the second substrate, and a first potting cavity is formed between the first dam and the second dam;

[0013] A conducting structure, wherein the conducting structure is located in the first encapsulation cavity and connects the first substrate and the second substrate;

[0014] a first potting structure, the first potting structure being adapted to be poured and cured into the first potting cavity, and the first potting structure being adapted to at least cover the conductive structure;

[0015] A tension reduction zone is formed on at least one side of the side walls of the first dam and the second dam located in the first potting cavity. The tension reduction zone gradually moves away from the first potting cavity from the lower end to the upper end. The horizontal cross-sectional area of ​​the first potting cavity increases from the lower end to the upper end of the tension reduction zone.

[0016] In some embodiments, the first dam and the second dam are located in a side wall in the first encapsulation cavity, and the tension relief area is disposed on a side wall closer to the conductive structure.

[0017] In some embodiments, the tension relief area is disposed on the side walls of the first dam and the second dam located in the first encapsulation cavity.

[0018] In some embodiments, the lower end of the tension relief zone contacts the upper surface of the first substrate or contacts the upper surface of the second substrate; the horizontal plane where the upper end of the tension relief zone is located is not lower than the horizontal plane where the highest point of the conductive structure is located; an electronic component is arranged on the upper surface of the second substrate, the electronic component is located in the first potting cavity, and the first potting structure is suitable for covering the electronic component; the height of the first potting structure protruding from the second substrate is greater than the height of the electronic component protruding from the second substrate.

[0019] In some embodiments, a third dam is further included, the third dam is formed on the upper surface of the second substrate, a second potting cavity is formed between the second dam and the third dam, an electronic component is arranged on the upper surface of the second substrate, the electronic component is located in the second potting cavity, the second potting cavity is suitable for potting and curing to form a second potting structure, the second potting structure is at least suitable for covering the electronic component; the height of the second potting structure protruding from the second substrate is greater than the height of the electronic component protruding from the second substrate.

[0020] In some embodiments, a fourth dam and a fifth dam are further included, wherein the fourth dam and the fifth dam are formed on the upper surface of the first potting structure and / or the second potting structure, and a third potting cavity is formed between the fourth dam and the fifth dam, wherein the third potting cavity is suitable for potting and curing to form a third potting structure, the upper surface of the first potting structure is suitable for installing a color filter, and the upper surface of the second potting structure and / or the third potting structure is not lower than the upper surface of the color filter.

[0021] In some embodiments, the top of the side wall of the first dam and the second dam in the first potting cavity, the top of the side wall of the second dam and the third dam in the second potting cavity, and the top of the side wall of the fourth dam and the fifth dam in the third potting cavity are all provided with an arc-shaped climbing area, and the first potting structure, the second potting structure and the third potting structure are suitable for forming a climbing structure protruding from the upper surface of the climbing area, and the horizontal plane at the highest point of the climbing structure is not lower than the horizontal plane at the top of the first dam or the second dam or the third dam or the fourth dam or the fifth dam.

[0022] In some embodiments, the first dam, the second dam, the third dam, the fourth dam and the fifth dam form a circular structure above the tension relief area, the climbing area is located above the horizontal dividing line of the curved surface in the opposite direction of the circular structure, and the reference surface heights of the first potting structure, the second potting structure and the third potting structure before and after curing are higher than the horizontal dividing line of the curved surface in the opposite direction of the circular structure.

[0023] In some embodiments, the color filter and the first encapsulation structure are connected via a supporting glue, and a horizontal plane at which a top end of the first dam is located is lower than a horizontal plane at which a highest point of the supporting glue is located.

[0024] In some embodiments, the climbing structure has the same height on the first enclosure dam and the second enclosure dam; the climbing structure has the same height on the second enclosure dam and the third enclosure dam; the climbing structure has the same height on the fourth enclosure dam and the fifth enclosure dam.

[0025] In some embodiments, the thermal conductivity of the material of at least one of the first potting structure, the second potting structure and the third potting structure is greater than the thermal conductivity of the material of the second substrate; the first dam, the second dam, the third dam, the fourth dam and the fifth dam are formed by painting glue, and the viscosity of the glue ranges from 200-2500cps; at least one of the first potting structure, the second potting structure and the third potting structure is made of opaque material.

[0026] In some embodiments, at least one side of the side walls of the second dam and the third dam located in the second potting cavity is bent to form the tension relief zone, and the lower end of the tension relief zone gradually moves away from the second potting cavity to the upper end; at least one side of the side walls of the fourth dam and the fifth dam located in the third potting cavity is bent to form the tension relief zone, and the lower end of the tension relief zone gradually moves away from the third potting cavity to the upper end.

[0027] A dam encapsulation method, the dam forming process comprises the following steps:

[0028] S100, providing a substrate with a flat surface, and drawing a base portion of a first colloid on the flat surface of the substrate;

[0029] S200, taking the base part of the first colloid as a reference, drawing the piled-up part of the first colloid along the base part of the first colloid once or multiple times;

[0030] S300, solidification, so that the various parts of the first colloid are combined to form a whole, and the top of the solidified first colloid has an upper spherical surface;

[0031] S400, drawing a base portion of a second colloid based on the upper spherical surface of the first colloid;

[0032] S500, taking the base part of the second colloid as a reference, drawing the piled-up part of the second colloid along the base part of the second colloid once or multiple times;

[0033] S600, curing, so that each part of the second colloid is combined with the first colloid to form a dam.

[0034] In some embodiments, in step S100, the piled-up portion of the first colloid is first drawn multiple times in a form of gradually decreasing width, and finally the piled-up portion of the first colloid is drawn in a form not less than the width of the penultimate glue drawing, wherein the width of the last glue drawing of the piled-up portion of the first colloid is not less than the width of the penultimate glue drawing of the piled-up portion of the first colloid; the contact angle formed by the base portion of the first colloid and the first substrate is greater than the contact angle formed by the base portion of the first colloid and the second substrate.

[0035] In some embodiments, the contact angle formed by the base portion of the first colloid and the first substrate is 90° to 100°, and the contact angle formed by the base portion of the first colloid and the second substrate is 45° to 85°.

[0036] In some embodiments, in step S500, the piled-up part of the second colloid is drawn multiple times in the form of gradually increasing width and / or height; the width of the base part of the second colloid is smaller than the width of the upper spherical surface of the first colloid; the width of the piled-up part of the second colloid when drawn for the last time is greater than the width of the base part of the second colloid; the width of the piled-up part of the second colloid is greater than the width of the upper spherical surface of the first colloid.

[0037] In some embodiments, in step S500, when the piled-up part of the second colloid is drawn multiple times, the width of the first glue drawing of the piled-up part of the second colloid is not greater than the width of the base part of the second colloid, and the height of the first glue drawing of the piled-up part of the second colloid is not greater than the height of the base part of the second colloid.

[0038] In some embodiments, multiple dams are designed using any of the above dam encapsulation methods, and encapsulation is performed by the following steps:

[0039] D100, providing a substrate, mounting the photosensitive chip and the circuit board on the substrate, and performing conductive structure processing on the photosensitive chip and the circuit board;

[0040] D200, a first dam of a first height is provided on the photosensitive chip, and a second dam of a second height is provided on the circuit board, and a first encapsulation cavity including a conductive structure is formed between the first dam and the second dam;

[0041] D300, pouring a material for forming a first potting structure into the first potting cavity, and at least completely immersing the conductive structure, and waiting for the first potting structure to solidify and form;

[0042] D400, a third dam of a third height is provided on the circuit board, and a second potting cavity containing electronic components on the circuit board is formed between the second dam and the third dam;

[0043] D500, pouring a material for forming a second potting structure into the second potting cavity and at least completely immersing the electronic components, and waiting for the second potting structure to be solidified and formed;

[0044] D600, a fourth dam of a fourth height is arranged on the first potting structure and / or the second potting structure, a fifth dam of a fifth height is arranged on the first potting structure and / or the second potting structure, and a third potting cavity is formed between the fourth dam and the fifth dam;

[0045] D700, pouring a material for forming a third potting structure into the third potting cavity, and waiting for the third potting structure to solidify and take shape.

[0046] In some embodiments, the first dam is formed in the non-photosensitive area of ​​the photosensitive chip and is arranged close to the photosensitive area.

[0047] A camera module comprises any of the above-mentioned dam potting structures and a lens, wherein the dam potting structure is located on the light-emitting side of the lens; and further comprises a motor, wherein the motor and / or the lens are mounted on the dam potting structure.

[0048] An electronic product comprises the above-mentioned camera module.

[0049] Compared with the prior art, the beneficial effects of this application are:

[0050] 1. The dam potting structure of the present application is designed to form a tension reduction zone on the dam. The tension reduction zone affects the horizontal cross-sectional area of ​​the first potting cavity from the lower end to the upper end of the tension reduction zone, thereby helping the first potting cavity to change the surface area of ​​the liquid during the liquid filling process. By changing the liquid surface area, the surface tension of the liquid is affected, and ultimately the effect of increasing the fluidity of the liquid can be achieved, allowing the glue to completely cover and fit the structure at the lead, thereby improving the stability of the packaging structure.

[0051] 2. The dam potting structure of the present application changes the surface tension between each potting structure and the side wall of the dam before solidification by setting a climbing area on the dam, thereby controlling the shape of the climbing structure formed by each potting structure, reducing the overall volume of the climbing structure, thereby reducing the overall height dimension of the dam potting structure package, and reducing the reflection area, thereby reducing the influence of stray light passing through the color filter.

[0052] 3. The dam potting method of the present application optimizes the glue dispensing method so that the glue liquid can stably form dams of different heights, reducing the risk of glue interruption and collapse during the glue dispensing process. The higher the upper limit of the glue dispensing height, the higher the height of the dam that can be formed, and the larger the volume of each potting structure, thereby effectively increasing the overall packaging strength of the dam potting structure.

[0053] 4. The camera module of the present application can install the lens and / or motor on the dam potting structure. In addition to obtaining the beneficial effects of the above-mentioned dam potting structure, it can also help the camera module, especially the lens and / or motor, to quickly dissipate heat by improving the thermal conductivity of the dam potting structure.

[0054] 5. The electronic product of the present application can be installed with a camera module having a dam encapsulation structure to obtain the beneficial effects of the above structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0055] Figure 1 It is a schematic diagram of use according to a preferred embodiment of the present application.

[0056] Figure 2 It is a schematic diagram of perfusion according to a preferred embodiment of the present application.

[0057] Figure 3 It is a schematic diagram of the coordination of the first potting structure and the second potting structure according to a preferred embodiment of the present application.

[0058] Figure 4 It is a schematic diagram of the infusion and curing process according to a preferred embodiment of the present application.

[0059] Figure 5 It is a schematic diagram of the liquid suction principle according to a preferred embodiment of the present application.

[0060] Figure 6 It is a schematic diagram of the curing process of a traditional packaging structure according to a preferred embodiment of the present application.

[0061] Figure 7 This is the encapsulation structure form under an ideal state according to a preferred embodiment of the present application.

[0062] Figure 8 This is a potting structure form under actual conditions according to a preferred embodiment of the present application.

[0063] Fig. 9 This is a potting structure morphology under adverse conditions according to a preferred embodiment of the present application.

[0064] Fig.10 This is a potting structure form under the condition that the heights of the dams on both sides are different according to a preferred embodiment of the present application.

[0065] Fig.11 It is a flow chart of secondary injection forming of a dam according to a preferred embodiment of the present application.

[0066] Fig.12 It is a flow chart of one-time pouring formation of a three-enclosure dam according to a preferred embodiment of the present application.

[0067] Fig.13 It is a flow chart of the injection molding of multiple dams with different heights according to a preferred embodiment of the present application.

[0068] Fig.14 It is a flow chart of dispensing and forming of the first colloid of the dam according to a preferred embodiment of the present application.

[0069] Fig.15 It is a flow chart of dispensing and forming of the second colloid of the dam according to a preferred embodiment of the present application.

[0070] In the figure: 1. first substrate; 11. photosensitive area; 12. first dam; 121. tension reduction area; 122. climbing area; 123. base part of the first colloid; 124. piled-up part of the first colloid; 125. base part of the second colloid; 126. piled-up part of the second colloid; 2. second substrate; 21. electronic component; 22. second dam; 23. third dam; 3. conduction structure; 4. first potting cavity; 41. first potting structure; 411. climbing structure; 5. second potting cavity; 51. second potting structure; 6. fourth dam; 7. fifth dam; 8. third potting cavity; 81. third potting structure; 9. color filter; 91. supporting glue. DETAILED DESCRIPTION

[0071] Below, the present application is further described in conjunction with specific implementation methods. It should be noted that, under the premise of no conflict, the various embodiments or technical features described below can be arbitrarily combined to form new embodiments.

[0072] In the description of the present application, it should be noted that directional words, such as the terms "center", "lateral", "longitudinal", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc., indicating directions and positional relationships are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of narrating the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and cannot be understood as limiting the specific scope of protection of the present application.

[0073] It should be noted that the terms "first", "second", etc. in the description and claims of the present application are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence.

[0074] The terms "including" and "having" and any variations thereof in the specification and claims of this application are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to these processes, methods, products or apparatuses.

[0075] The present application is further described below with reference to the accompanying drawings:

[0076] like Figures 1 to 13 As shown, the present application provides a dam encapsulation structure, comprising:

[0077] The first substrate 1 has a photosensitive area 11 disposed on its upper surface.

[0078] The second substrate 2 surrounds the outer side of the first substrate 1 .

[0079] The first dam 12 is formed on the upper surface of the first substrate 1 , and the first dam 12 at least surrounds the photosensitive area 11 .

[0080] The second dam 22 is formed on the upper surface of the second substrate 2 , and a first encapsulation cavity 4 is formed between the first dam 12 and the second dam 22 .

[0081] The conducting structure 3 is located in the first encapsulation cavity 4 and connects the first substrate 1 and the second substrate 2 .

[0082] The first potting structure 41 is suitable for being poured and cured into the first potting cavity 4 . The first potting structure 41 is at least suitable for covering the conductive structure 3 .

[0083] The first dam 12 and the second dam 22 are located in the first potting cavity 4. The tension reduction zone 121 is formed on at least one side of the side wall. The tension reduction zone 121 gradually moves away from the first potting cavity 4 from the lower end to the upper end. It can also be understood that, when the side wall of the first dam 12 and the second dam 22 away from the tension reduction zone 121 does not change, the first dam 12 and the second dam 22 show a contraction trend from the lower end to the upper end of the tension reduction zone 121, and the horizontal cross-sectional area (measured in Figure 1 With reference to the view in FIG. 1 , the transverse cross section along the viewing direction of the view can also be understood as, during the glue pouring process of the first pouring cavity 4, the surface parallel to the liquid surface) changes in an increasing trend.

[0084] It can be understood that the change in the horizontal cross-sectional area of ​​the first potting cavity 4 from the lower end to the upper end in the tension-reducing zone 121 needs to exclude the influence of the area of ​​the conductive structure 3 in the corresponding horizontal cross-section, that is, if there is no conductive structure 3 in the first potting cavity 4, then during the pouring process of the first potting structure 41 in the tension-reducing zone 121, the liquid surface area of ​​the first potting structure 41 can be maintained in a growing state during the rising process of the liquid level. If a conductive structure 3 is provided in the first potting cavity 4, then during the pouring process of the first potting structure 41 in the tension-reducing zone 121, in the horizontal cross-section where the conductive structure 3 is located, the growth of the liquid surface area of ​​the first potting structure 41 may not be able to overcome the increase in the area of ​​the conductive structure 3 in the horizontal cross-section, so that the liquid surface area of ​​the first potting structure 41 remains unchanged or even decreases during the rising process of the liquid level, but the occurrence of the above situation will not affect the role of the tension-reducing zone 121 in releasing the surface tension of the liquid.

[0085] In the process of pouring glue into the first potting cavity 4 to form the first potting structure 41, since the structure at the conductive structure 3, especially at the connection between the conductive structure 3 and the first substrate 1 and the second substrate 2, is relatively dense and the surface complexity is relatively high, and the glue itself has a certain viscosity, when it flows to the above-mentioned position, it is blocked by the structure and is easily blocked by the fluidity, resulting in insufficient coverage and adhesion of the glue around the conductive structure 3 to produce a cavity. The tension reduction area 121 is set on the first dam 12 and / or the second dam 22 to improve the liquid surface tension of the glue when it flows at the conductive structure 3, and to release the liquid surface tension by increasing the surface area of ​​the glue liquid, thereby promoting the flow of glue, so that the glue can more perfectly fill, cover and adhere to the conductive structure 3 for protection, and finally improve the stability of the dam filling structure packaging.

[0086] In some embodiments, the tension reduction zone 121 may be a relatively flat surface structure such as a curved surface or an inclined surface, which can reduce the difficulty of forming the tension reduction zone 121 of the dam, and at the same time release the surface tension of the liquid and promote the flow of glue.

[0087] In some embodiments, the first substrate 1 is a photosensitive chip, and the first dam 12 is formed in a non-photosensitive area around the photosensitive chip, and generally has a width of 200-500 μm.

[0088] In some embodiments, the second substrate 2 is a circuit board.

[0089] It can be understood that the first dam 12 is mainly used to protect and isolate the photosensitive area 11 to prevent the first potting structure 41 from contacting the photosensitive area 11 before and after forming, and the second dam 22 is mainly used to limit the maximum forming area of ​​the first potting structure 41. The first potting cavity 4 formed by the first dam 12 and the second dam 22 can help the first potting structure 41 to be formed stably.

[0090] In some embodiments, the conductive structure 3 includes common conductive wires and conductive components including gold wires, and is used for electrical connection between the first substrate 1 and the second substrate 2 .

[0091] In some embodiments, the first dam 12 and the second dam 22 are located in the side wall of the first encapsulation cavity 4, and a tension relief zone 121 is provided on the side wall closer to the conductive structure 3. According to the role of the tension relief zone 121 in releasing the surface tension of the liquid, and in combination with the relationship between the surface tension of the liquid and the size of the drop, it can be concluded that the closer the distance between the side walls of the first dam 12 and the second dam 22 and the conductive structure 3, the smaller the surface area of ​​the liquid when flowing between the two, and thus it is easy to generate a larger liquid surface tension. Therefore, it is preferred to provide the tension relief zone 121 on the side wall closer to the conductive structure 3, which can effectively release the surface tension of the liquid in a narrow space, thereby promoting the flow of glue in a narrow space.

[0092] In some embodiments, further, by providing a tension reduction zone 121 on the side walls of the first dam 12 and the second dam 22 located in the first potting cavity 4, the liquid surface tension between the conductive structure 3 and the side walls of the first dam 12 and the second dam 22 in all directions during the glue pouring process can be improved, thereby promoting the flow of glue in the entire first potting cavity 4, so as to achieve the best filling, coating and bonding effect on the conductive structure 3, thereby improving the overall stability of the dam filling structure.

[0093] like Figure 1 In the embodiment shown, the conductive structure 3 is usually directly connected to the upper surfaces of the first substrate 1 and the second substrate 2, so the lower end of the tension reduction zone 121 needs to contact the upper surface of the first substrate 1 or the upper surface of the second substrate 2, which can promote the flow of glue when the first potting cavity 4 is initially poured.

[0094] In some embodiments, to ensure that the horizontal plane where the upper end of the tension reduction zone 121 is located is not lower than the horizontal plane where the highest point of the conductive structure 3 is located, the liquid surface tension can always be released before the conductive structure 3 is completely covered by the glue, so that the glue can achieve the best filling, coating, bonding and protection effect on the conductive structure 3 as much as possible, so as to protect the conductive structure 3 and prevent the conductive structure 3 from being damaged when the camera module collides, thereby increasing the service life of the camera module.

[0095] It is worth noting that the horizontal plane where the upper end of the tension-reducing zone 121 is located is not lower than the horizontal plane where the highest point of the conductive structure 3 is located, which is the state with the best perfusion effect. In actual use, it is necessary to give priority to ensuring that the surface tension of the liquid at the connection between the conductive structure 3 and the upper surfaces of the first substrate 1 and the second substrate 2 is released. The horizontal plane where the upper end of the tension-reducing zone 121 is located can be appropriately lower than the horizontal plane where the highest point of the conductive structure 3 is located.

[0096] In some embodiments, an electronic component 21 is disposed on the upper surface of the second substrate 2, and the electronic component 21 is located in the first potting cavity 4. The first potting structure 41 is suitable for covering the electronic component 21. After being covered by the first potting structure 41, the electronic component 21 can obtain better protection, and can effectively reduce the probability of loosening of the electronic component 21 and the second substrate 2 when subjected to vibration and impact, thereby improving the packaging stability of the dam potting structure.

[0097] In some embodiments, the height of the first potting structure 41 protruding from the second substrate 2 is greater than the height of the electronic component 21 protruding from the second substrate 2. The first potting structure 41 completely covers the electronic component 21, and can provide insulation protection for the electronic component 21. At the same time, it obtains higher buffering performance, reduces the risk of damage to the electronic component 21, and thereby increases the service life of the camera module.

[0098] like Figure 2 In the embodiment shown, when the first potting cavity 4 is filled with glue, the potting port of the machine needs to be as far away from the conductive structure 3 and the electronic component 21 as possible, so that the glue can obtain enough space to reduce the surface tension of the liquid, thereby reducing blockage and bubble generation when contacting the conductive structure 3 and the electronic component 21, thereby improving the coating performance of the conductive structure 3 and the electronic component 21.

[0099] In some embodiments, if the second dam 22 does not cover the electronic component 21, a third dam 23 may be further provided on the periphery of the second dam 22. The third dam 23 is formed on the upper surface of the second substrate 2. A second potting cavity 5 is formed between the second dam 22 and the third dam 23. An electronic component 21 is provided on the upper surface of the second substrate 2. The electronic component 21 is located in the second potting cavity 5. The second potting cavity 5 is suitable for potting and curing to form a second potting structure 51. The second potting structure 51 is at least suitable for covering the electronic component 21. The electronic component 21 is covered by the second potting structure 51, thereby ensuring the packaging stability of the dam potting structure.

[0100] In some embodiments, the height of the second potting structure 51 protruding from the second substrate 2 is greater than the height of the electronic component 21 protruding from the second substrate 2. The second potting structure 51 completely covers the electronic component 21, and can insulate and protect the electronic component 21. At the same time, it obtains higher buffering performance, reduces the risk of damage to the electronic component 21, and thereby increases the service life of the camera module.

[0101] The upper surface of the first potting structure 41 is suitable for installing the color filter 9, and the upper surface of the second potting structure 51 can be set to be not lower than the upper surface of the color filter 9 (the surface on the side away from the photosensitive chip) to form a step protection structure, thereby protecting the color filter 9, reducing the impact of the external structure on the color filter 9, and reducing the influence of stray light. Under the premise of reducing the height of the camera module, the filter reaches the maximum height, which can protect the photosensitive chip and the electronic components 21 in the shell, thereby extending the service life of the camera module. The second potting structure 51 can also serve as a supporting structure for supporting the motor or lens. The segmented potting forming of the first potting structure 41 and the second potting structure 51 can improve the flatness of the upper surfaces of the first potting structure 41 and the second potting structure 51, and effectively reduce the difficulty of potting. At the same time, the first potting structure 41 and the second potting structure 51 can also be freely formed with different upper surface heights to achieve different functions.

[0102] In some embodiments, at least one side of the side wall of the second dam 22 and the third dam 23 located in the second potting cavity 5 is bent to form a tension relief zone 121, thereby helping the second potting cavity 5 to release the surface tension of the liquid during the potting process and reducing the generation of bubbles and cavities at the electronic components 21 and the like.

[0103] In some embodiments, the first dam 12, the second dam 22 and the third dam 23 have the same structure. For example, tension reduction areas 121 are formed on both sides of the first dam 12, the second dam 22 and the third dam 23, which can increase the structural versatility so that they can be formed through the same process, effectively reducing processing difficulty and processing costs and improving packaging efficiency.

[0104] like Figure 3 In the illustrated embodiment, a fourth dam 6 and a fifth dam 7 are further included. The fourth dam 6 and the fifth dam 7 can be formed on the upper surface of the first potting structure 41 and / or the second potting structure 51. A third potting cavity 8 is formed between the fourth dam 6 and the fifth dam 7. The third potting cavity 8 is suitable for pouring and curing to form a third potting structure 81. The fourth dam 6 and the fifth dam 7 use the upper surface of the first potting structure 41 and / or the second potting structure 51 as a base, and do not use the first dam 12, the second dam 22 and the third dam 23 as a base. The main purpose is to avoid the difficulty of forming and setting due to the upper end surfaces of the first dam 12, the second dam 22 and the third dam 23 being curved surfaces, thereby reducing the difficulty of forming the fourth dam 6 and the fifth dam 7.

[0105] The third potting structure 81 can increase the height in the direction of the optical axis, so that the dam potting structure can provide more supporting structures at the rear focus part behind the lens. The third potting structure 81 can also serve as a supporting structure for supporting a motor or a lens.

[0106] When the heights of the first potting structure 41 and the second potting structure 51 are the same, at least the upper surface of the third potting structure 81 must be no lower than the upper surface of the color filter 9 (the surface on the side away from the photosensitive chip) to form a step protection structure to protect the color filter 9, reduce the impact of the external structure on the color filter 9, and reduce the influence of stray light. On the premise of lowering the height of the camera module, the filter reaches the maximum height, which can protect the photosensitive chip and the electronic components 21 in the shell, thereby extending the service life of the camera module.

[0107] The filter can be composed of optical glue and filter material. The thickness of the filter protruding from the photosensitive chip is less than or equal to 0.15mm. The specific value can be set according to different camera modules. For example, in some embodiments of the present application, the specific setting value can be 0.1mm, 0.11mm, 0.12mm, 0.14mm or 0.15mm, thereby reducing the height of the camera module.

[0108] In some embodiments, at least one side of the side wall of the fourth dam 6 and the fifth dam 7 in the third potting cavity 8 is bent to form a tension relief zone 121, thereby helping the second potting cavity 5 to release the surface tension of the liquid during the potting process and reduce the generation of bubbles and cavities.

[0109] In some embodiments, the first dam 12, the second dam 22, the third dam 23, the fourth dam 6 and the fifth dam 7 have the same structure. For example, tension reduction areas 121 are formed on both sides of the first dam 12, the second dam 22, the third dam 23, the fourth dam 6 and the fifth dam 7, which can increase the structural versatility so that they can be formed through the same process, effectively reducing processing difficulty and processing cost, and improving packaging efficiency.

[0110] like Figure 7 As shown, under ideal conditions, the potting material is glue, which has no surface tension, and the glue and the dam are in a completely non-wet state. As a liquid, the surface of the glue is in a horizontal state under the influence of gravity, the internal pressure of the liquid, etc. Therefore, although the shape of the surface is also affected by other factors, in most cases, the surface remains horizontal when the liquid is still.

[0111] like Figure 8 As shown, in actual situations, the potting material is glue, and the glue and the dam are not completely wetted. Due to the influence of the surface tension of the glue, there will be a climbing phenomenon between the glue and the dam glue. Since the present invention is used in the manufacturing process of the camera module, the miniaturization of electronic products often makes the size range from hundreds of μm to several mm, and the surface tension effect of more than 10 μm can affect the product yield. In fact, under the influence of surface tension, the dam glue will attract the potting glue (liquid) to climb up. If the size effect is small, there is no need to consider the yield effect.

[0112] like Fig. 9 As shown, in actual situations, further poor workmanship may occur. Due to the high wettability between the dam and the potting compound, the dam will attract the potting compound (liquid). In this case, the climbing height between the side wall and the potting compound (liquid) may be too large. In severe cases, it may even affect the potting compound, resulting in the inability to form a flat surface for installation or support. For the camera module, this affects the installation of the lens or motor, resulting in this method being unable to be used as an installation reference for the camera module.

[0113] like Fig.10 As mentioned above, in actual situations, further poor process may occur. When the heights of the first dam 12 and the second dam 22 (or the second dam 22 and the third dam 23, or the fourth dam 6 and the fifth dam 7) are different, due to the different wettability between the first dam 12 and the second dam 22 (or the second dam 22 and the third dam 23, or the fourth dam 6 and the fifth dam 7) and the potting glue, or when the first dam 12 (or the second dam 22, or the fourth dam 6) is used as the basis for potting glue, the height between the outer dam glue and the potting glue is higher, and the potting glue will attract the potting glue (liquid). In this case, the climbing height between the outer wall and the potting glue (liquid) may be too large, and in severe cases it may even affect the potting glue, resulting in the potting glue being unable to form a plane for installation or support.

[0114] It can be seen from this that in the actual production and processing process, the climbing phenomenon can only be improved by optimizing the wettability and the height difference of the dam, but cannot be completely eliminated. It can be concluded that the purpose of setting up multiple dams in this application to form potting structures of different heights is to ensure the flatness of the upper surface of the potting structure, thereby facilitating packaging connection.

[0115] In some embodiments, an arc-shaped climbing area 122 is provided at the top of the side wall of the first dam 12 and the second dam 22 in the first potting cavity 4, at the top of the side wall of the second dam 22 and the third dam 23 in the second potting cavity 5, and at the top of the side wall of the fourth dam 6 and the fifth dam 7 in the third potting cavity 8. The first potting structure 41, the second potting structure 51 and the third potting structure 81 are suitable for forming a climbing structure 411 (generally a curved surface structure) protruding from its own upper surface in the climbing area 122. The horizontal plane at which the highest point of the climbing structure 411 is located is not lower than the horizontal plane at which the top of the first dam 12 or the second dam 22 or the third dam 23 or the fourth dam 6 or the fifth dam 7 is located, thereby reducing the overall size of the dam filling structure and improving space utilization.

[0116] In some embodiments, the color filter 9 and the first potting structure 41 are connected by a supporting glue 91, wherein the horizontal plane at the top of the first dam 12 is lower than the horizontal plane at the highest point of the supporting glue 91. It can be understood that since the highest point of the climbing structure 411 is lower than the top of the first dam 12, the attachment connection between the color filter 9 and the first potting structure 41 by the supporting glue 91 will not interfere with the first dam 12 and the climbing structure 411 on the first dam 12, and can effectively reduce the risk of collision.

[0117] In some embodiments, the climbing structure 411 is at the same height on the first dam 12 and the second dam 22, so that the upper surface of the first potting structure 41 can form a reference plane, which facilitates structural design for further upward construction and connection.

[0118] In some embodiments, the climbing structure 411 is at the same height on the second dam 22 and the third dam 23 , so that the upper surface of the second potting structure 51 can form a reference plane, facilitating structural design for further upward construction and connection.

[0119] In some embodiments, the climbing structure 411 is at the same height on the fourth enclosure dam 6 and the fifth enclosure dam 7 , so that the upper surface of the third potting structure 81 can form a reference plane, facilitating structural design for further upward construction and connection.

[0120] In particular, the horizontal plane where the highest point of the climbing structure 411 at the first enclosure dam 12 is equal to the horizontal plane where the top of the first enclosure dam 12 is located, the horizontal plane where the highest point of the climbing structure 411 at the second enclosure dam is equal to the horizontal plane where the top of the second enclosure dam 22 is located, the horizontal plane where the highest point of the climbing structure 411 at the third enclosure dam 23 is equal to the horizontal plane where the top of the third enclosure dam 23 is located, the horizontal plane where the highest point of the climbing structure 411 at the fourth enclosure dam 6 is equal to the horizontal plane where the top of the fourth enclosure dam 6 is located, and the horizontal plane where the highest point of the climbing structure 411 at the fifth enclosure dam 7 is equal to the horizontal plane where the top of the fifth enclosure dam 7 is located. Since the climbing structure 411 is formed by the surface tension of the liquid potting glue and the side wall, the climbing structure 411 is in a curved form. The curved climbing structure 411 can reduce the reflection area and reduce the influence of stray light passing through the color filter 9.

[0121] like Figures 4 to 5 In the embodiment shown, the first dam 12, the second dam 22, the third dam 23, the fourth dam 6 and the fifth dam 7 form a circular structure above the tension reduction area 121, that is, the main cross-section of the dam structure on the tension reduction area 121 is circular, and the climbing area 122 is located at the horizontal dividing line of the curved surface in the opposite direction of the circular structure (refer to Figure 4 and 5 above the horizontal dotted line in the figure.

[0122] The principle on which the climbing structure 411 is lowered is as follows Figure 5 As shown, the climbing area 122 on the dam can reduce the attraction between the solid interface and the liquid, thereby reducing the climbing phenomenon of the edge of the drop. In the present application, the climbing area 122 is a part of the circular structure of the dam. Since the gap between the solid interface and the liquid is reduced, a phenomenon similar to attracting the liquid to extend can be achieved. In the present application, the potting glue is continuously filled in the cavity formed by the dam with the substrate as the base. Therefore, after the liquid of the present application is filled and lifted, the liquid contacts the climbing area 122 at the bottom of the ball structure (the climbing area 122 is divided into two parts, upper and lower, by the horizontal dividing line of the curved surface in the opposite direction of the circular structure). The climbing area 122 can first achieve an attraction with the liquid potting glue, thereby reducing the edge filling bubbles. After the liquid contacts the climbing area 122 at the top of the ball structure, the glue edge can be pulled up, the glue bubbles, the uneven glue filling phenomenon, and the edge climbing phenomenon can be reduced.

[0123] like Figure 4 In the illustrated embodiment, the reference plane heights of the first potting structure 41, the second potting structure 51 and the third potting structure 81 before and after solidification are higher than the horizontal dividing line of the curved surface in the opposite direction of the circular structure, ensuring that the climbing area 122 above the circular structure of the dam can be effective.

[0124] like Figure 5 As shown, the packaging method in the prior art will form a larger climbing area 122 on the supporting bodies on both sides, resulting in an increase in stray light and also affecting the compactness of the packaging of each component.

[0125] like Figure 4 In the illustrated embodiment, the main cross-section of the tension relief zone 121 of the dam is trapezoidal or conical, and the tension relief zone 121 is located on one side or both sides of the dam.

[0126] In some embodiments, the thermal conductivity of at least one of the first encapsulation structure 41 , the second encapsulation structure 51 , and the third encapsulation structure 81 is greater than the thermal conductivity of the second substrate 2 .

[0127] In some embodiments, the first potting structure 41, the second potting structure 51 and the third potting structure 81 preferably use high thermal conductivity materials, which can absorb and conduct heat from various parts of the camera module, and dissipate the heat to the external environment through their own area advantages, thereby helping the camera module to dissipate heat quickly.

[0128] In some embodiments, the first dam 12, the second dam 22, the third dam 23, the fourth dam 6 and the fifth dam 7 are formed by painting glue, and the viscosity of the glue ranges from 200 to 2500 cps. The use of painting glue does not require mold molding or photolithography processing, which can save production costs. In particular, 877 cps potting glue is used in this embodiment. The inventors found that although surface tension and viscosity are two different physical quantities, there is a certain correlation between them. The surface tension is related to the interaction between molecules inside the liquid, while the viscosity is an indicator of the internal resistance of the liquid. Generally speaking, the greater the surface tension, the worse the fluidity of the liquid, that is, the greater the viscosity; conversely, the smaller the surface tension, the better the fluidity of the liquid, that is, the smaller the viscosity. In summary, the surface tension and viscosity of water are both functions of temperature, and the value of the surface tension is usually larger, while the value of the viscosity is smaller. Both have an important influence on the behavior of the liquid and the interaction with other substances. Selecting glue with appropriate viscosity can control the fluidity of the glue, thereby effectively controlling the stacking and forming of the dam.

[0129] In some embodiments, at least one of the first potting structure 41, the second potting structure 51 and the third potting structure 81 is made of opaque material. When light passes through the optical lens and enters the photosensitive area 11, part of the light is refracted through the non-photosensitive area and the electronic device area to the photosensitive area 11, which will reduce the imaging quality of the camera module. Therefore, the first potting structure 41, the second potting structure 51 and the third potting structure 81 are made of opaque material, which can reduce the refraction of light and thereby ensure the imaging quality of the camera module.

[0130] In some embodiments, the first encapsulation structure 41 and the third encapsulation structure 81 are made of opaque materials, which can block external light (including light refracted at the second encapsulation structure 51) from entering the photosensitive area 11, thereby ensuring the imaging quality of the camera module.

[0131] In some embodiments, the light-shielding material may be an ink layer.

[0132] like Figures 14 to 15 As shown, the present application provides a dam encapsulation method, and the dam forming process includes the steps of:

[0133] S100, providing a substrate with a flat surface (a first substrate 1 and a second substrate 2 in the present application), and drawing a base part 123 of a first colloid on the flat surface of the substrate;

[0134] S200, taking the base part 123 of the first colloid as a reference, drawing the stacked part 124 of the first colloid along the base part 123 of the first colloid once or multiple times;

[0135] S300, solidification, so that the various parts of the first colloid are combined to form a whole, and the top of the solidified first colloid has an upper spherical surface;

[0136] S400, drawing a base portion 125 of the second colloid based on the upper spherical surface of the first colloid;

[0137] S500, taking the base part 125 of the second colloid as a reference, drawing the stacked part 126 of the second colloid along the base part 125 of the second colloid once or multiple times;

[0138] S600, curing, so that each part of the second colloid is combined with the first colloid to form a dam.

[0139] In some embodiments, in step S100 , a contact angle formed between the base portion 123 of the first colloid and the first substrate 1 is greater than a contact angle formed between the base portion 123 of the first colloid and the second substrate 2 .

[0140] In some embodiments, in the present application, the contact angle formed by the base part 123 of the first colloid and the first substrate 1 is 90° to 100°, which can make the shape of the glue droplet fuller and suitable for stacking, so that the dam can obtain a higher height limit at a smaller width, thereby reducing the packaging volume while ensuring structural strength.

[0141] In some embodiments, in the present application, the second substrate 2 generally refers to a circuit board, a steel plate, a molded body, etc. Since the first colloid and the second substrate 2 are in an infiltration state, they can accommodate a larger glue width, and since the second substrate 2 is far away from the photosensitive chip, there is no need to consider the impact on the photosensitive chip. Therefore, the width of the formed glue width between the second substrate 2 and the first colloid can provide a larger bonding area, thereby providing a greater bonding force. Therefore, the contact angle formed by the base part 123 of the first colloid and the second substrate 2 is set to 45° to 85°.

[0142] In some embodiments, in step S100, the stacked portion 124 of the first colloid is first drawn multiple times with a gradually decreasing width, and finally the stacked portion 124 of the first colloid is drawn with a width not less than the second to last drawing width.

[0143] Among them, since the stacked part 124 of the first colloid is in a non-wetted state with the substrate, but the droplet of the base part 123 of the first colloid is in a full shape, the upper surface of the base part 123 of the first colloid is relatively large. If the glue is painted once and then exposed and painted again, the curved surface formed by tension has a small contact surface, and the stacked part 124 of the first colloid will flow, causing the glue of the stacked part 124 of the first colloid to be broken when it is painted for the second time or more, which makes it impossible to stack glue on the photosensitive chip. Therefore, it is necessary to ensure that the first glue painting width of the stacked part 124 of the first colloid is smaller than the base part 123 of the first colloid, so as to prevent the stacked part 124 of the first colloid from exceeding the supporting surface of the base part 123 of the first colloid and overflowing to the two sides of the base part 123 of the first colloid, and to prevent the stacked part 124 of the first colloid from overflowing inward or outward to affect the structures such as the electronic component 21 and the photosensitive chip, or to affect the glue reference surface based on the base part 123 of the first colloid.

[0144] The width of the last glue painting of the piled-up part 124 of the first colloid is greater than the width of the penultimate glue painting of the piled-up part 124 of the first colloid, thereby preventing the risk of glue breaking due to too small glue width in the last glue painting of the piled-up part 124 of the first colloid.

[0145] Different glue materials can be used for each glue painting of the piled-up part 124 of the first colloid, but it is most preferred to use glue of the same material, so that the piled-up part 124 of the first colloid can be combined to form a full droplet, so that the last glue painting of the piled-up part 124 of the first colloid can flow down along with the previous glue paintings, and the width automatically becomes smaller, thereby forming a structure with a trapezoidal or conical cross-sectional shape.

[0146] Preferably, drawing the stacked portion 124 of the first colloid by drawing glue multiple times is more suitable for the case where the contact angle between the first colloid and the substrate is greater than 90°. In this case, the drop shape of the base portion 123 of the first colloid is fuller, and it is more necessary to avoid flow and breakage of glue in a decreasing form, thereby achieving the stacking requirement at a narrower width.

[0147] In some embodiments, the first colloid and the second colloid are formed by the same glue liquid, which can save material cost and process cost. In addition, the same materials can achieve the effect of mutual dissolution, increase the flow effect during the last glue painting, and thus increase the glue width.

[0148] In some embodiments, in step S500 , the second colloid stacked portion 126 is drawn multiple times in a form of gradually increasing width and / or height.

[0149] In some embodiments, in step S500, the width of the base portion 125 of the second colloid is smaller than the width of the upper spherical surface of the first colloid, so that the base portion 125 of the second colloid can be stably stacked on the first colloid, increasing the stacking height, so that the height of the dam can be higher, and the capacity of the glue in the dam can be greater, thereby increasing the packaging strength of the packaging structure. Those skilled in the art should know that the smaller the camera module, the higher the packaging strength needs to be maintained.

[0150] In some embodiments, in step S500, the height of the last glue drawing of the piled-up part 126 of the second colloid is greater than the height of the base part 125 of the second colloid, so that the various parts of the second colloid can dissolve each other to form larger droplets, and the surface tension of the formed droplets is insufficient to support their shape. After standing, the droplets formed by the base part 125 and the piled-up part of the second colloid can penetrate to the vicinity of the upper spherical surface of the first colloid, and then the structure is solidified to form a dam structure.

[0151] In some embodiments, each part of the second colloid is made of glue of the same material, so that each part of the second colloid can be fused into a droplet with a larger width than that formed by the base part 125 of the second colloid.

[0152] In some embodiments, in step S500, when the piled-up portion 126 of the second colloid is formed by a single-shot glue painting, the width of the piled-up portion 126 of the second colloid is greater than the width of the upper spherical surface of the first colloid, which enables the droplets of the piled-up portion 126 of the second colloid to more easily penetrate into the upper spherical surface of the first colloid. In this way, it is easier to obtain the dam structure of the present application.

[0153] In some embodiments, in step S500, when the piled-up part 126 of the second colloid is formed by multiple coatings, the width of the first coating of the piled-up part 126 of the second colloid is not greater than the width of the base part 125 of the second colloid, so as to maintain the droplet shape of the second coating and the base part 125 of the second colloid to prevent droplet penetration, and the height of the first coating of the piled-up part 126 of the second colloid is not greater than the height of the base part 125 of the second colloid to prevent droplet penetration.

[0154] In particular, the glue width of the second glue painting of the piled part 126 of the second colloid is greater than the glue width of the first glue painting of the piled part 126 of the second colloid. The first glue painting of the piled part 126 of the second colloid and the second glue painting of the piled part 126 of the second colloid can use different materials, but preferably use the same material, so that the first glue painting, the second glue painting and the base part of the piled part 126 of the second colloid can be merged into a droplet with a larger width than the original base part of the second colloid.

[0155] In particular, the height of the last glue painting of the piled-up part of the second colloid is greater than the height of the drops formed by the fusion of the previous glue paintings of the second colloid (including the previous glue paintings of the base part 125 of the second colloid and the piled-up part 124 of the first colloid), so that they can combine with each other to form a mutually soluble glue droplet, and because the added droplet is larger, the surface tension of the original droplet is insufficient to support the shape. After standing, the piled-up part 126 of the second colloid can penetrate to the vicinity of the upper spherical surface of the first colloid, and then the structure is solidified to form a dam structure.

[0156] In another embodiment, the width of the last glue painting of the piled-up portion 126 of the second colloid is larger than the upper spherical surface of the first colloid, so that the droplets of the second colloid can more easily penetrate onto the upper spherical surface, which makes it easier to obtain the dam structure of the present application.

[0157] In some embodiments, a plurality of dams are designed using the glue drawing method of any of the above embodiments, and are packaged by the following steps:

[0158] D100, providing a substrate, mounting a photosensitive chip and a circuit board on the substrate, and performing a conductive structure 3 process on the photosensitive chip and the circuit board;

[0159] D200, a first dam 12 of a first height is provided on the photosensitive chip, and a second dam 22 of a second height is provided on the circuit board, and a first encapsulation cavity 4 including a conductive structure 3 is formed between the first dam 12 and the second dam 22;

[0160] D300, pouring a material for forming a first encapsulation structure 41 into the first encapsulation cavity 4, and at least completely immersing the conductive structure 3, and waiting for the first encapsulation structure 41 to solidify and take shape;

[0161] D400, a third dam 23 of a third height is provided on the circuit board, and a second potting cavity 5 containing the electronic components 21 on the circuit board is formed between the second dam 22 and the third dam 23;

[0162] D500, pouring a material for forming a second encapsulation structure 51 into the second encapsulation cavity 5, and at least completely immersing the electronic component 21, and waiting for the second encapsulation structure 51 to solidify and take shape;

[0163] D600, a fourth dam 6 of a fourth height is provided on the first potting structure 41 and / or the second potting structure 51, a fifth dam 7 of a fifth height is provided on the first potting structure 41 and / or the second potting structure 51, and a third potting cavity 8 is formed between the fourth dam 6 and the fifth dam 7;

[0164] D700 , pouring material for forming a third encapsulation structure 81 into the third encapsulation cavity 8 , and waiting for the third encapsulation structure 81 to solidify and take shape.

[0165] At least the following packaging methods can be obtained from steps D100 to D700.

[0166] like Fig.11 As shown, the first packaging method is: a first dam 12 is formed on the non-photosensitive area of ​​the first substrate 1, and a second dam 22 is formed outside the electronic component 21 of the second substrate 2, the heights of the tops of the first dam 12 and the second dam 22 are equal, a first potting structure 41 is formed by pouring between the first dam 12 and the second dam 22, a fourth dam 6 and a fifth dam 7 are formed on the flat surface of the first potting structure 41, a third potting structure 81 is formed by pouring between the fourth dam 6 and the fifth dam 7, and the color filter 9 is attached and installed on the upper surface of the first potting structure 41.

[0167] like Fig.12 As shown, the second packaging method is: forming a first dam 12 on the non-photosensitive area of ​​the first substrate 1, forming a second dam 22 on the inner side of the electronic component 21 of the second substrate 2, and forming a third dam 23 on the outer side of the electronic component 21 of the second substrate 2, wherein the heights of the tops of the second dam 22 and the third dam 23 are equal and higher than the height of the top of the first dam 12, pouring to form a first potting structure 41 between the first dam 12 and the second dam 22, pouring to form a second potting structure 51 between the second dam 22 and the third dam 23, the height of the first potting structure 41 is higher than the height of the first potting structure 41, and the color filter 9 is attached and installed on the upper surface of the first potting structure 41.

[0168] like Fig.13 As shown, the third packaging method is: forming a first dam 12 on the non-photosensitive area of ​​the first substrate 1, forming a second dam 22 on the inner side of the electronic component 21 of the second substrate 2, and forming a third dam 23 on the outer side of the electronic component 21 of the second substrate 2, the heights of the tops of the first dam 12, the second dam 22 and the third dam 23 are equal, pouring to form a first potting structure 41 between the first dam 12 and the second dam 22, pouring to form a second potting structure 51 between the second dam 22 and the third dam 23, forming a fourth dam 6 and a fifth dam 7 on the flat surface of the first potting structure 41 and / or the second potting structure 51, pouring to form a third potting structure 81 between the fourth dam 6 and the fifth dam 7, and attaching and installing the color filter 9 to the upper surface of the first potting structure 41.

[0169] In some embodiments, the first dam 12 is formed in the non-photosensitive area of ​​the photosensitive chip, that is, the flat surface of the first substrate 1 is the non-photosensitive area (200-500μm) between the photosensitive area 11 of the photosensitive chip and the photosensitive chip pad, and is arranged close to the photosensitive area 11. Since the stacked portion 124 of the first colloid can be arranged in a smaller size, in order to reduce the size of the camera module, the dam glue is arranged as far as possible in the direction of the photosensitive area 11 of the photosensitive chip to increase the width of the package, thereby providing a larger supporting area and reducing the package size of the camera module. The larger contact angle formed between the first colloid and the second substrate 2 can prevent the first colloid from infiltrating into the first substrate 1 and prevent the first colloid from precipitating toward the photosensitive chip.

[0170] In some embodiments, the height of the flat surface of the first substrate 1 is lower than the height of the flat surface of the second substrate 2. It can also be understood that the height of the flat surface on the photosensitive chip used to set the first dam 12 is lower than the height of the flat surface on the circuit board used to set the second dam 22. This can reduce the total height of the module with the photosensitive chip as the substrate, thereby reducing the height of the camera module.

[0171] A camera module is used for taking photos and / or videos, comprising a dam encapsulation structure and a lens according to any one of the above embodiments, wherein the dam encapsulation structure is located on the light-emitting side of the lens.

[0172] The camera module can be used as a rear camera module or a front camera module. Specifically, the camera module can be used as a rear main camera module, a wide-angle camera module or a telephoto camera module.

[0173] In some embodiments, a motor is included, and the motor and / or the lens are mounted on the dam potting structure.

[0174] An electronic product comprises a camera module according to any one of the above embodiments, wherein the camera module is fixed in an internal accommodating cavity of the electronic device.

[0175] The above describes the basic principles, main features and advantages of the present application. Technical personnel in this industry should understand that the present application is not limited to the above embodiments. The above embodiments and the specification only describe the principles of the present application. Without departing from the spirit and scope of the present application, the present application will also have various changes and improvements. These changes and improvements all fall within the scope of the present application for which protection is sought. The scope of protection claimed by the present application is defined by the attached claims and their equivalents.

Claims

1. A dam encapsulation structure, characterized in that: include: A first substrate, wherein a photosensitive area is disposed on an upper surface of the first substrate; A second substrate, the second substrate surrounds the outer side of the first substrate; A first dam is formed on the upper surface of the first substrate, and the first dam at least surrounds the photosensitive area; a second dam, wherein the second dam is formed on an upper surface of the second substrate, and a first potting cavity is formed between the first dam and the second dam; A conducting structure, wherein the conducting structure is located in the first encapsulation cavity and connects the first substrate and the second substrate; a first potting structure, the first potting structure being adapted to be poured and cured into the first potting cavity, and the first potting structure being adapted to at least cover the conductive structure; A tension reduction zone is formed on at least one side of the side walls of the first dam and the second dam located in the first potting cavity. The tension reduction zone gradually moves away from the first potting cavity from the lower end to the upper end. The horizontal cross-sectional area of ​​the first potting cavity increases from the lower end to the upper end of the tension reduction zone.

2. A dam encapsulation structure according to claim 1, characterized in that: The first dam and the second dam are located in the side wall of the first encapsulation cavity, and the tension relief area is arranged on a side wall closer to the conducting structure.

3. A dam encapsulation structure according to claim 1, characterized in that: The tension relief area is disposed on the side walls of the first dam and the second dam located in the first potting cavity.

4. A dam encapsulation structure according to claim 1, characterized in that: The lower end of the tension relief zone contacts the upper surface of the first substrate or contacts the upper surface of the second substrate; the horizontal plane where the upper end of the tension relief zone is located is not lower than the horizontal plane where the highest point of the conductive structure is located; an electronic component is arranged on the upper surface of the second substrate, the electronic component is located in the first potting cavity, and the first potting structure is suitable for covering the electronic component; A height of the first encapsulation structure protruding from the second substrate is greater than a height of the electronic component protruding from the second substrate.

5. The dam encapsulation structure according to claim 1, characterized in that: The second substrate further comprises a third dam, wherein the third dam is formed on the upper surface of the second substrate, a second potting cavity is formed between the second dam and the third dam, an electronic component is disposed on the upper surface of the second substrate, the electronic component is located in the second potting cavity, the second potting cavity is suitable for potting and curing to form a second potting structure, and the second potting structure is at least suitable for covering the electronic component; A height of the second encapsulation structure protruding from the second substrate is greater than a height of the electronic component protruding from the second substrate.

6. A dam encapsulation structure according to any one of claims 1 to 5, characterized in that: It also includes a fourth dam and a fifth dam, wherein the fourth dam and the fifth dam are formed on the upper surface of the first potting structure and / or the second potting structure, a third potting cavity is formed between the fourth dam and the fifth dam, the third potting cavity is suitable for pouring and curing to form a third potting structure, the upper surface of the first potting structure is suitable for installing a color filter, and the upper surface of the second potting structure and / or the third potting structure is not lower than the upper surface of the color filter.

7. A dam encapsulation structure according to claim 6, characterized in that: The top of the side wall of the first dam and the second dam in the first potting cavity, the top of the side wall of the second dam and the third dam in the second potting cavity, and the top of the side wall of the fourth dam and the fifth dam in the third potting cavity are all provided with an arc-shaped climbing area, and the first potting structure, the second potting structure and the third potting structure are suitable for forming a climbing structure protruding from the upper surface of the climbing area, and the horizontal plane at the highest point of the climbing structure is not lower than the horizontal plane at the top of the first dam, the second dam, the third dam, the fourth dam or the fifth dam.

8. A dam encapsulation structure according to claim 7, characterized in that: The first dam, the second dam, the third dam, the fourth dam and the fifth dam form a circular structure above the tension reduction area, the climbing area is located above the horizontal dividing line of the curved surface in the opposite direction of the circular structure, and the reference surface heights of the first potting structure, the second potting structure and the third potting structure before and after solidification are higher than the horizontal dividing line of the curved surface in the opposite direction of the circular structure.

9. A dam encapsulation structure according to claim 7, characterized in that: The color filter and the first encapsulation structure are connected via a supporting glue, and a horizontal plane where a top end of the first dam is located is lower than a horizontal plane where a highest point of the supporting glue is located.

10. A dam encapsulation structure according to claim 7, characterized in that: The climbing structure has the same height on the first enclosure dam and the second enclosure dam; the climbing structure has the same height on the second enclosure dam and the third enclosure dam; the climbing structure has the same height on the fourth enclosure dam and the fifth enclosure dam.

11. A dam encapsulation structure according to claim 6, characterized in that: The thermal conductivity of the material of at least one of the first potting structure, the second potting structure and the third potting structure is greater than the thermal conductivity of the material of the second substrate; the first dam, the second dam, the third dam, the fourth dam and the fifth dam are formed by painting glue, and the viscosity of the glue ranges from 200 to 2500cps; at least one of the first potting structure, the second potting structure and the third potting structure is made of opaque material.

12. A dam encapsulation structure according to claim 6, characterized in that: At least one side of the side walls of the second dam and the third dam located in the second potting cavity is bent to form the tension relief zone, and the lower end of the tension relief zone gradually moves away from the second potting cavity to the upper end; at least one side of the side walls of the fourth dam and the fifth dam located in the third potting cavity is bent to form the tension relief zone, and the lower end of the tension relief zone gradually moves away from the third potting cavity to the upper end.

13. A dam encapsulation method, characterized in that: The process of forming the dam includes the following steps: S100, providing a substrate with a flat surface, and drawing a base portion of a first colloid on the flat surface of the substrate; S200, taking the base part of the first colloid as a reference, drawing the piled-up part of the first colloid along the base part of the first colloid once or multiple times; S300, solidification, so that the various parts of the first colloid are combined to form a whole, and the top of the solidified first colloid has an upper spherical surface; S400, drawing a base portion of a second colloid based on the upper spherical surface of the first colloid; S500, taking the base part of the second colloid as a reference, drawing the piled-up part of the second colloid along the base part of the second colloid once or multiple times; S600, curing, so that each part of the second colloid is combined with the first colloid to form a dam; Among them, the piled-up part of the first colloid is first drawn in multiple times in the form of gradually decreasing width, and finally the piled-up part of the first colloid is drawn in the form of a width not less than the second to last glue drawing. The width of the last glue drawing of the piled-up part of the first colloid is not less than the width of the second to last glue drawing of the piled-up part of the first colloid, so that tension reduction areas are formed on both sides after the first colloid is solidified.

14. A dam encapsulation method according to claim 13, characterized in that: A contact angle formed between the base portion of the first colloid and the first substrate is greater than a contact angle formed between the base portion of the first colloid and the second substrate.

15. A dam encapsulation method according to claim 14, characterized in that: The contact angle formed between the base part of the first colloid and the first substrate is 90° to 100°, and the contact angle formed between the base part of the first colloid and the second substrate is 45° to 85°.

16. A dam encapsulation method according to claim 13, characterized in that: In step S500, the stacked portion of the second colloid is drawn multiple times in a form of increasing width and / or height step by step; the width of the base portion of the second colloid is smaller than the width of the upper spherical surface of the first colloid; The width of the last glue drawing of the piled-up part of the second colloid is greater than the width of the base part of the second colloid; the width of the piled-up part of the second colloid is greater than the width of the upper spherical surface of the first colloid.

17. A dam encapsulation method according to claim 13, characterized in that: In step S500, when the stacked part of the second colloid is drawn multiple times, the width of the first glue drawing of the stacked part of the second colloid is not greater than the width of the base part of the second colloid, and the height of the first glue drawing of the stacked part of the second colloid is not greater than the height of the base part of the second colloid.

18. A dam encapsulation method according to claim 13, characterized in that: A plurality of dams are designed using the method of any one of claims 13 to 17, and encapsulated by the following steps: D100, providing a substrate, mounting the photosensitive chip and the circuit board on the substrate, and performing conductive structure processing on the photosensitive chip and the circuit board; D200, a first dam of a first height is provided on the photosensitive chip, and a second dam of a second height is provided on the circuit board, and a first encapsulation cavity including a conductive structure is formed between the first dam and the second dam; D300, pouring a material for forming a first potting structure into the first potting cavity, and at least completely immersing the conductive structure, and waiting for the first potting structure to solidify and form; D400, a third dam of a third height is provided on the circuit board, and a second potting cavity containing electronic components on the circuit board is formed between the second dam and the third dam; D500, pouring a material for forming a second potting structure into the second potting cavity and at least completely immersing the electronic components, and waiting for the second potting structure to be solidified and formed; D600, a fourth dam of a fourth height is arranged on the first potting structure and / or the second potting structure, a fifth dam of a fifth height is arranged on the first potting structure and / or the second potting structure, and a third potting cavity is formed between the fourth dam and the fifth dam; D700, pouring a material for forming a third potting structure into the third potting cavity, and waiting for the third potting structure to solidify and take shape.

19. A dam encapsulation method according to claim 18, characterized in that: The first dam is formed in the non-photosensitive area of ​​the photosensitive chip and is arranged close to the photosensitive area.

20. A camera module, characterized in that: It comprises a dam potting structure obtained according to any one of claims 1 to 19 and a lens, wherein the dam potting structure is located on the light-emitting side of the lens; and it also comprises a motor, wherein the motor and / or the lens are mounted on the dam potting structure.

21. An electronic product, characterized in that: Including the camera module described in claim 20.

Images