Temperature adjustment calibration method, device, equipment and storage medium for heat treatment equipment

Abstract

The present disclosure provides a temperature adjustment calibration method, device, equipment and storage medium for heat treatment equipment. The method includes: S1, turning on a target heating lamp among multiple heating lamps of the heat treatment equipment separately, and adjusting the target heating lamp to a first power value; S2, measuring the first temperature values ​​of multiple first temperature measurement points corresponding to the target heating lamp; S3, adjusting the target heating lamp to a second power value based on the average value of the first temperature values ​​of the multiple first temperature measurement points, so that the average value is the same as the target process temperature; S4, measuring the second temperature values ​​of multiple associated temperature measurement points under the second power value; S5, when it is determined that the radiation energy difference of the target heating lamp meets the use requirements based on the second temperature value, calibrating the power-temperature curve based on the second power value. According to the solution of the present disclosure, the power of each strip lamp can be accurately calibrated, the temperature control accuracy of the chamber can be improved, and it helps the chamber reach the required process temperature.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a temperature adjustment and calibration method, apparatus, device, and storage medium for heat treatment equipment. Background Art

[0002] Heat treatment is an important step in the silicon wafer processing process. It is necessary to control the process temperature in the heat treatment chamber from several hundred to thousands of degrees Celsius. The temperature consistency at each point in the chamber at different process temperatures is an important factor affecting the wafer film quality. Summary of the Invention

[0003] The present disclosure provides a temperature adjustment and calibration method, apparatus, device, and storage medium for heat treatment equipment to solve or alleviate one or more technical problems in the prior art.

[0004] In a first aspect, the present disclosure provides a temperature adjustment and calibration method for heat treatment equipment, comprising:

[0005] S1. Turning on a target heating lamp among a plurality of heating lamps in a heat treatment apparatus and adjusting the target heating lamp to a first power value. The heating lamp is a strip lamp. The first power value is determined based on a target process temperature and a power-temperature curve.

[0006] S2. Measuring first temperature values ​​at a plurality of first temperature measurement points corresponding to the target heating lamp, wherein the plurality of first temperature measurement points are arranged along a length direction of the target heating lamp.

[0007] S3. Adjust the target heating lamp to a second power value according to an average value of the first temperature values ​​of the plurality of first temperature measurement points, so that the average value is the same as the target process temperature.

[0008] S4. Measuring second temperature values ​​at a plurality of associated temperature measurement points at a second power value. The plurality of associated temperature measurement points includes a plurality of first temperature measurement points and at least one second temperature measurement point. The second temperature measurement point is arranged along a length of the target heating lamp and is located on an extension of a line connecting the plurality of first temperature measurement points.

[0009] S5. When it is determined according to the second temperature value that the radiation energy difference of the target heating lamp meets the use requirement, calibrate the power-temperature curve according to the second power value.

[0010] In a second aspect, the present disclosure provides a temperature adjustment and calibration device for heat treatment equipment, comprising:

[0011] The first adjustment module is configured to individually activate a target heating lamp among a plurality of heating lamps in the heat treatment equipment and adjust the target heating lamp to a first power value. The heating lamp is a strip lamp. The first power value is determined based on a target process temperature and a power-temperature curve.

[0012] The first measuring module is configured to measure first temperature values ​​at a plurality of first temperature measuring points corresponding to the target heating lamp, wherein the plurality of first temperature measuring points are arranged along the length direction of the target heating lamp.

[0013] The second regulating module is used to regulate the target heating lamp to a second power value according to an average value of the first temperature values ​​of the plurality of first temperature measuring points, so that the average value is the same as the target process temperature.

[0014] The second measurement module is configured to measure second temperature values ​​at a plurality of associated temperature measurement points at a second power value. The plurality of associated temperature measurement points includes a plurality of first temperature measurement points and at least one second temperature measurement point. The second temperature measurement points are arranged along the length of the target heating lamp and are located on an extension of a line connecting the plurality of first temperature measurement points.

[0015] The calibration module is used to calibrate the power-temperature curve according to the second power value when it is determined according to the second temperature value that the radiation energy difference of the target heating lamp meets the use requirement.

[0016] According to a third aspect, an electronic device is provided, including:

[0017] At least one processor. And

[0018] A memory in communication with the at least one processor.

[0019] The memory stores instructions that can be executed by the at least one processor, and the instructions are executed by the at least one processor to enable the at least one processor to perform any method in the embodiments of the present disclosure.

[0020] In a fourth aspect, a non-transitory computer-readable storage medium storing computer instructions is provided, wherein the computer instructions are used to enable the computer to execute any method according to the embodiments of the present disclosure.

[0021] In a fifth aspect, a computer program product is provided, comprising a computer program, which implements any method according to the embodiments of the present disclosure when executed by a processor.

[0022] The beneficial effects of the technical solution provided by the present disclosure include at least:

[0023] The power of each strip lamp can be precisely calibrated to improve the chamber temperature control accuracy and help the chamber reach the required process temperature.

[0024] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present disclosure, nor are they intended to limit the scope of the present disclosure. Other features of the present disclosure will become readily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar components or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments provided in accordance with the present disclosure and should not be regarded as limiting the scope of the present disclosure.

[0026] Figure 1 1 is a flow chart of a temperature adjustment and calibration method for heat treatment equipment according to an embodiment of the present disclosure;

[0027] Figure 2 is a flow chart of a temperature adjustment and calibration method for heat treatment equipment provided according to another embodiment of the present disclosure;

[0028] Figure 3 This is a temperature measurement point layout diagram provided according to an embodiment of the present disclosure;

[0029] Figure 4 1 is a schematic structural diagram of a temperature adjustment and calibration device for heat treatment equipment provided according to an embodiment of the present disclosure;

[0030] Figure 5 is a block diagram of an electronic device for implementing an embodiment of the present disclosure. DETAILED DESCRIPTION

[0031] The present disclosure will be described in further detail below with reference to the accompanying drawings. The same reference numerals in the accompanying drawings represent elements with the same or similar functions. Although various aspects of the embodiments are shown in the accompanying drawings, the drawings are not necessarily drawn to scale unless otherwise indicated.

[0032] In addition, numerous specific details are provided in the following detailed description to better illustrate the present disclosure. Those skilled in the art will appreciate that the present disclosure can be practiced without certain specific details. In some instances, methods, means, components, circuits, etc. well known to those skilled in the art are not described in detail in order to highlight the main purpose of the present disclosure.

[0033] In related technologies, heat treatment equipment often uses strip lights as a heating source. In actual operation, the radiant energy emitted by each strip light at the same location on the wafer may vary. The radiant energy emitted by each strip light at different locations within the strip light itself may also vary. Large variations in radiant energy values ​​can cause significant variations in the ambient temperature required for chemical reactions on the wafer surface, leading to uneven film thickness on the silicon wafer. Existing temperature control methods typically adjust all strip lights simultaneously, failing to account for temperature variations caused by individual differences in each group of lights, which in turn affect the overall temperature variation.

[0034] On the other hand, the light source of the strip light is tungsten filament, which will sublimate and become thinner under long-term high-power working conditions, and condense on the surface of the lamp to form a black coating, which will cause the radiation energy emitted by the lamp to change.

[0035] In order to at least partially solve one or more of the above-mentioned problems and other potential problems, the embodiments of the present disclosure provide a temperature adjustment and calibration method for heat treatment equipment. By utilizing the technical solution of the embodiments of the present disclosure, the power of each strip lamp can be accurately calibrated, the temperature control accuracy of the chamber can be improved, and the chamber can be helped to reach the required process temperature.

[0036] Figure 1 FIG. 1 is a flow chart of a temperature adjustment and calibration method for a heat treatment device according to an embodiment of the present disclosure. Figure 1 As shown, the method comprises at least the following steps:

[0037] S1. Turning on a target heating lamp among a plurality of heating lamps in a heat treatment apparatus and adjusting the target heating lamp to a first power value. The heating lamp is a strip lamp. The first power value is determined based on a target process temperature and a power-temperature curve.

[0038] In the disclosed embodiment, the multiple heating lamps are parallel strip lamps. The target heating lamp can be understood as the heating lamp to be tested or the strip lamp to be tested. When the target heating lamp is turned on, the other heating lamps are turned off. The power-temperature curve refers to the relationship between the electrical power input to the heating device and the theoretical temperature that can be achieved. The required power can be determined from the power-temperature curve based on the target process temperature.

[0039] S2. Measuring first temperature values ​​at a plurality of first temperature measurement points corresponding to the target heating lamp, wherein the plurality of first temperature measurement points are arranged along a length direction of the target heating lamp.

[0040] When measuring temperature, common temperature measurement methods in related technical fields such as thermocouples, infrared thermometers, thermal imagers or optical fiber temperature sensors can be used to obtain the temperature value of the temperature measuring point. In order to accurately obtain the surface temperature of the wafer when it is heated, the temperature measuring point is set on the plane where the wafer is located. For the strip light, a group of temperature measuring points is provided along the length direction of the strip light on the plane where the wafer is located. A group of temperature measuring points can be shared by multiple adjacent strip lights, or a group of temperature measuring points can be provided for each strip light, so that the group of temperature measuring points corresponding to each strip light are independent of each other. At this time, a group of temperature measuring points corresponding to each strip light is provided on the plane where the wafer is located directly below the strip light.

[0041] The first temperature measurement point can be understood as a temperature measurement point within the outline range of the wafer, and can also be understood as a temperature measurement point that can directly reflect the actual radiation energy of the strip light to the wafer.

[0042] S3. Adjust the target heating lamp to a second power value according to an average value of the first temperature values ​​of the plurality of first temperature measurement points, so that the average value is the same as the target process temperature.

[0043] The average value of the first temperature is T. By gradually increasing or decreasing the power of the target heating lamp, the T value is made equal to the theoretical radiant energy temperature T0, i.e., the target process temperature. At this time, the power of the target heating lamp is recorded as the second power value.

[0044] S4. Measuring second temperature values ​​at a plurality of associated temperature measurement points at a second power value. The plurality of associated temperature measurement points includes a plurality of first temperature measurement points and at least one second temperature measurement point. The second temperature measurement point is arranged along a length of the target heating lamp and is located on an extension of a line connecting the plurality of first temperature measurement points.

[0045] The associated temperature measurement points refer to a group of temperature measurement points associated with the target heating lamp. The associated temperature measurement points include a first temperature measurement point and a second temperature measurement point. The second temperature measurement point can be understood as a temperature measurement point outside the outline range of the wafer.

[0046] S5. When it is determined according to the second temperature value that the radiation energy difference of the target heating lamp meets the use requirement, calibrate the power-temperature curve according to the second power value.

[0047] By using the second temperature values ​​at multiple associated measurement points, the difference in radiant energy generated by the target lamp at different locations can be determined. If the difference is small, the lamp meets the requirements and the power-temperature curve of the target lamp can be calibrated. If the difference is large and does not meet the requirements, the target lamp can be removed and replaced. After replacement, the above steps can be repeated to confirm that the replaced lamp meets the requirements, ensuring the assembly of a higher-quality strip light.

[0048] The calibration process can be performed by adjusting the corresponding points on the original power-temperature curve, for example, the first power value and the target process temperature point (P1, T target ) is adjusted to (P2, T target ). For the temperature points adjacent to this point, the corresponding power value can be corrected according to the adjustment coefficient k. The power adjustment coefficient k can be defined as:

[0049] k=(P2-P1) / (T target -T)

[0050] k represents the power adjustment amplitude corresponding to temperature change.

[0051] In this way, the new curve obtained is the calibrated power-temperature curve.

[0052] According to the solution of the embodiment of the present disclosure, the power-temperature curve of each strip light can be accurately calibrated to improve the temperature control accuracy of the chamber. Through closed-loop power compensation, the power of each strip light can be accurately adjusted, which helps the chamber to accurately reach the required process temperature when performing a heat treatment process.

[0053] In one possible implementation, S5, when it is determined based on the second temperature value that the radiant energy difference of the target heating lamp meets the use requirement, calibrating the power-temperature curve based on the second power value further includes the steps of:

[0054] The difference between the second temperature value of each associated temperature measurement point and the target process temperature is determined.

[0055] When the difference corresponding to each associated temperature measurement point is smaller than a preset threshold, the power-temperature curve is calibrated according to the second power value.

[0056] In the disclosed embodiments, the target process temperature can also be a theoretical radiant energy temperature. By determining the difference between the second temperature value at each associated temperature measurement point and the target process temperature, the radiant energy differences at multiple locations of the target heating lamp can be determined. This radiant energy difference determines the quality of the lamp. If the corresponding differences at each associated temperature measurement point are less than a preset threshold, meaning the target heating lamp still meets operational requirements, the power-temperature curve is calibrated based on the second power value to achieve power compensation.

[0057] like Figure 2 As shown, in a possible implementation, the method of the embodiment of the present disclosure includes the above steps S1 to S5, and further includes the steps:

[0058] S6. Turn off the target heating lamp, select an undetected heating lamp from the multiple heating lamps as a new target heating lamp, and repeat the above steps S1 to S5.

[0059] In the embodiment of the present disclosure, the remaining strip lamps are tested in sequence at the same process temperature, the tested strip lamps that meet the use requirements are calibrated, and the tested strip lamps that do not meet the use requirements are replaced.

[0060] It should be noted that due to the manufacturing errors of the same strip light itself, the radiation energy emitted at different positions of the strip light is different. If the difference in radiation energy values ​​is large, it will cause the ambient temperature required for chemical reactions to occur on the surface of the silicon wafer to vary greatly, resulting in uneven film thickness on the silicon wafer.

[0061] According to the solution of the embodiment of the present disclosure, each strip light is tested separately, so that defective strip lights can be screened out for replacement with high-quality strip lights, thereby avoiding the problem of uneven film thickness caused by the presence of defective lights.

[0062] In a possible implementation, the method of the embodiment of the present disclosure includes the above steps S1 to S5, and further includes the following steps:

[0063] S7: Update the target process temperature, and execute the above steps S1 to S5 for each of the plurality of heating lamps, wherein the updated target process temperature is higher than the target process temperature before the update.

[0064] In the disclosed embodiment, steps S1 to S5 are sequentially performed on multiple heating lamps to achieve testing at the same process temperature. The target process temperature is then raised, and a new round of testing is performed on the multiple heating lamps, sequentially testing from low to high temperatures to ensure that each strip lamp meets the requirements at each process temperature.

[0065] According to the measured power values ​​of each group of lamps at different temperatures, the power-temperature curve is re-fitted, and the temperature is increased according to this power-temperature curve in subsequent processing.

[0066] According to the solution of the embodiment of the present disclosure, the beneficial effects include:

[0067] 1. To avoid various factors that may cause lamps at the same position to emit different radiant energy to the same position in actual working conditions, the power can be accurately adjusted to reach the required process temperature through closed-loop power compensation.

[0068] 2. By evaluating the quality of the lights, we can avoid the difference in radiant energy emitted at different positions due to the manufacturing differences of the strip lights themselves.

[0069] 3. During the later use of the heat treatment equipment, the lamp quality is regularly tested through the temperature control process of the present invention to provide a guarantee for the long-term stable processing of the equipment.

[0070] 4. The temperature control accuracy of the chamber is further improved by precisely controlling the temperature consistency of different positions of the strip light at different process temperatures.

[0071] Figure 3 This is a temperature measurement point layout diagram provided by an embodiment of the present disclosure. Figure 3 As shown, in a possible implementation, the multiple first temperature measurement points include:

[0072] The T1 temperature measurement point is located at the first end of the area where the orthographic projections of the multiple heating lamps overlap with the wafer outline.

[0073] The T2 temperature measurement point is located at the second end of the area where the orthographic projections of the multiple heating lamps overlap with the wafer outline.

[0074] The T3 temperature measurement point is located at the center of the area where the orthographic projections of multiple heating lamps overlap with the wafer outline.

[0075] In the disclosed embodiment, the rectangular outer frame in the figure represents the inner wall of the chamber, the multiple rectangular strips represent strip lights, the circular ring in the center of the chamber represents the wafer outline, and the multiple solid dots represent temperature measurement points. Temperature measurement points T1 and T2 are located at the outer edges of the wafer, and temperature measurement point T3 is located at the center of T1 and T2. For each strip light, these three temperature measurement points directly reflect the actual radiant energy of the light to the wafer, and are also the locations where the greatest possible radiant energy difference may occur.

[0076] In a possible implementation, before executing step S1, the following steps are further included:

[0077] A silicon substrate equipped with multiple temperature measuring devices is placed in the center of a chamber of a heat treatment device.

[0078] The plane where the silicon substrate is located is the same as the plane where the upper surface of the wafer is located when performing the heat treatment process, and multiple temperature measuring devices are set at multiple first temperature measuring points.

[0079] In the embodiment of the present disclosure, the temperature measuring device may be a thermocouple.

[0080] According to the solution of the embodiment of the present disclosure, a temperature measuring device is set on a silicon substrate, so that the silicon substrate simulates the processed wafer, so that the temperature value obtained by the temperature measuring device is more accurate and close to the actual working condition.

[0081] In a possible implementation, the shape of the silicon substrate is the same as the shape of the horizontal cross section in the chamber, and the size of the silicon substrate is slightly smaller than the size of the horizontal cross section.

[0082] The second temperature measurement point includes:

[0083] The temperature measurement point T4 is located at the intersection of the orthographic projections of the plurality of heating lamps and the outer edge of the first end of the silicon substrate. And / or

[0084] The temperature measuring point T5 is located at the intersection of the orthographic projections of the plurality of heating lamps and the outer edge of the second end of the silicon substrate.

[0085] Continue to refer Figure 3 As shown in FIG, the rectangular inner frame in the figure is the outer edge of the silicon substrate. The size of the silicon substrate is slightly smaller than the size of the horizontal cross section of the chamber.

[0086] According to the solution of the embodiment of the present disclosure, all temperature measurement points are set on the silicon substrate, which helps to improve the accuracy of the temperature measurement results.

[0087] In one possible implementation, for an edge heating lamp whose orthographic projection does not coincide with the wafer contour, the T3 temperature measuring point is set at the vertical point of the center point of the edge heating lamp on the silicon substrate, the T1 temperature measuring point is set at the vertical point of the center point of the T3 temperature measuring point and the T4 temperature measuring point on the silicon substrate, and the T2 temperature measuring point is set at the vertical point of the center point of the T3 temperature measuring point and the T5 temperature measuring point on the silicon substrate.

[0088] Continue to refer Figure 3 As shown, for Figure 3 For the edge strip lights at the upper and lower sides, since their orthographic projections do not overlap with the wafer outline, the T1 and T2 temperature measurement points can be equally divided and set between other adjacent temperature measurement points.

[0089] In a possible implementation, the preset threshold is determined according to the temperature control accuracy and adjustment coefficient of the chamber.

[0090] In the embodiment of the present disclosure, the preset threshold is the product of the temperature control accuracy and the adjustment coefficient. The temperature control accuracy is preset according to the process requirements, such as 5°C or 10°C, which is not limited here. The adjustment coefficient is a parameter that further limits the difference in radiant energy at different positions of the strip light according to the temperature control accuracy. In some examples, the adjustment coefficient can be 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, or 1. Taking the temperature control accuracy of 10°C and the adjustment coefficient of 0.5 as an example, at this time, the preset threshold is 5°C, that is, if the difference between the temperature at any position of the strip light and the target process temperature is greater than 5°C, the strip light needs to be replaced.

[0091] In one possible implementation, the temperature adjustment and calibration method of the heat treatment equipment according to the embodiment of the present disclosure includes the following steps:

[0092] 1. Provide a silicon substrate with the same shape as the chamber and slightly smaller size. High-temperature thermocouples are evenly distributed on the silicon substrate to measure the temperature of the position points. Figure 3 As shown, the silicon substrate is placed in the center of the chamber. The upper surface of the silicon substrate is at the same height as the actual upper surface of the wafer under working conditions. The temperature measurement points of the silicon substrate are arranged at the intersection of the strip light and the outer contour of the wafer (respectively T1 and T2), the midpoint of the intersection (respectively T3), and the two ends near the inner wall of the chamber (respectively T4 and T5). △T is the temperature control accuracy of the chamber, and T0 is the theoretical radiant energy temperature of the lamp at the corresponding point. Figure 2 The figure shows a temperature control flow chart. Turn on one strip light and turn off the other lights. Adjust the power to the minimum value required for the actual process. The temperature values ​​at points T1, T2, and T3 directly reflect the actual radiant energy of the light on the wafer. The average value of these three points is T. By increasing or decreasing the light power, the T value is equal to T0. At this time, record the values ​​of T1, T2, T3, T4, and T5 and subtract them from T0. If these values ​​are all less than △T / 2, the strip light meets the requirements. If any of these values ​​is greater than △T / 2, the strip light does not meet the requirements.

[0093] 2. Repeat step 1 and perform the same process temperature test on the remaining lamps in turn. Adjust the power of the remaining lamps in turn so that their T values ​​are the same as T0. At this time, record the values ​​of T1, T2, T3, T4, and T5, and subtract them from T0. If these values ​​are all less than △T / 2, it means that this strip lamp meets the use requirements. If any of these values ​​is greater than △T / 2, it means that this strip lamp does not meet the use requirements.

[0094] 3. Adjust each lamp in turn from low temperature to high temperature to the theoretical process temperature value, repeat steps "1" and "2", adjust the power of the lamp in turn so that its T value is the same as T0, and record the T1, T2, T3, T4, and T5 values ​​at this time, and make the difference with T0. If these values ​​are all smaller than △T / 2, it means that this strip light tube meets the use requirements. If any of these values ​​is larger than △T / 2, it means that this strip light tube does not meet the use requirements.

[0095] 4. Based on the measured power values ​​of each group of lamps at different temperatures, the power-temperature curve is re-fitted, and the temperature is increased according to this power-temperature curve in subsequent processing.

[0096] 5. By reducing △T and installing better quality strip lights, the temperature control accuracy can be further improved.

[0097] 6. After the silicon substrate is placed in the working position of the chamber, the numerical control program automatically completes the measurement of all lamps, power compensation, lamp quality screening, and power-temperature curve fitting through the compensated power.

[0098] The beneficial effects of the solution according to the embodiment of the present disclosure include at least:

[0099] 1. Considering the temperature difference caused by the differences in each group of lamps, closed-loop power compensation is used to ensure that the processing point reaches the required ideal process temperature, ensuring that the lamps in the same position emit the same radiation energy at the same location;

[0100] 2. Due to manufacturing variations in the strip lights themselves, the radiant energy emitted at different locations varies. Large variations in radiant energy values ​​can cause large temperature differences on the silicon wafer surface. The temperature control process of the present invention screens out defective strip lights, thus avoiding the problem of uneven film thickness caused by the presence of defective lights.

[0101] 3. During the later use of the heat treatment equipment, the radiant energy value of the lamp decreases due to aging. The temperature control process of the present invention regularly monitors the quality of the lamp to provide a guarantee for the long-term stable processing of the equipment.

[0102] 4. Through the temperature control process of the present invention, strip lights with smaller temperature differences at different positions are selected, thereby further improving the temperature control accuracy of the chamber.

[0103] Figure 4FIG. 1 is a schematic diagram of a temperature adjustment and calibration device for a heat treatment device according to an embodiment of the present disclosure. Figure 4 As shown, the device at least includes:

[0104] The first adjustment module 401 is configured to individually activate a target heating lamp among the plurality of heating lamps in the heat treatment equipment and adjust the target heating lamp to a first power value. The heating lamp is a strip lamp. The first power value is determined based on a target process temperature and a power-temperature curve.

[0105] The first measuring module 402 is configured to measure first temperature values ​​at a plurality of first temperature measuring points corresponding to the target heating lamp, wherein the plurality of first temperature measuring points are arranged along the length direction of the target heating lamp.

[0106] The second adjustment module 403 is configured to adjust the target heating lamp to a second power value according to an average value of the first temperature values ​​of the plurality of first temperature measurement points, so that the average value is the same as the target process temperature.

[0107] The second measurement module 404 is configured to measure second temperature values ​​at a plurality of associated temperature measurement points at a second power value. The plurality of associated temperature measurement points includes a plurality of first temperature measurement points and at least one second temperature measurement point. The second temperature measurement point is arranged along the length of the target heating lamp and is located on an extension of a line connecting the plurality of first temperature measurement points.

[0108] The calibration module 405 is configured to calibrate the power-temperature curve according to the second power value when it is determined that the radiation energy difference of the target heating lamp meets the use requirement according to the second temperature value.

[0109] In one possible implementation, the calibration module 405 is configured to:

[0110] The difference between the second temperature value of each associated temperature measurement point and the target process temperature is determined.

[0111] When the difference corresponding to each associated temperature measurement point is smaller than a preset threshold, the power-temperature curve is calibrated according to the second power value.

[0112] In one possible implementation, the apparatus of the embodiment of the present disclosure further includes:

[0113] The first loop module is used to turn off the target heating lamp, select an undetected heating lamp from the multiple heating lamps as a new target heating lamp, and repeat the above steps S1 to S5.

[0114] In one possible implementation, the apparatus of the embodiment of the present disclosure further includes:

[0115] The second loop module is used to update the target process temperature and execute the above steps S1 to S5 for each of the plurality of heating lamps, wherein the updated target process temperature is higher than the target process temperature before the update.

[0116] In a possible implementation, the multiple first temperature measurement points include:

[0117] The T1 temperature measurement point is located at the first end of the area where the orthographic projections of the multiple heating lamps overlap with the wafer outline.

[0118] The T2 temperature measurement point is located at the second end of the area where the orthographic projections of the multiple heating lamps overlap with the wafer outline.

[0119] The T3 temperature measurement point is located at the center of the area where the orthographic projections of multiple heating lamps overlap with the wafer outline.

[0120] In the disclosed embodiment, the rectangular outer frame in the figure represents the inner wall of the chamber, the multiple rectangular strips represent strip lights, the circular ring in the center of the chamber represents the wafer outline, and the multiple solid dots represent temperature measurement points. Temperature measurement points T1 and T2 are located at the outer edges of the wafer, and temperature measurement point T3 is located at the center of T1 and T2. For each strip light, these three temperature measurement points directly reflect the actual radiant energy of the light to the wafer, and are also the locations where the greatest possible radiant energy difference may occur.

[0121] In one possible implementation, the apparatus of the embodiment of the present disclosure further includes:

[0122] A silicon substrate equipped with multiple temperature measuring devices is placed in the center of the chamber of the heat treatment equipment.

[0123] The plane where the silicon substrate is located is the same as the plane where the upper surface of the wafer is located when performing the heat treatment process, and multiple temperature measuring devices are set at multiple first temperature measuring points.

[0124] In a possible implementation, the shape of the silicon substrate is the same as the shape of the horizontal cross section in the chamber, and the size of the silicon substrate is slightly smaller than the size of the horizontal cross section.

[0125] The second temperature measurement point includes:

[0126] The temperature measurement point T4 is located at the intersection of the orthographic projections of the plurality of heating lamps and the outer edge of the first end of the silicon substrate. And / or

[0127] The temperature measuring point T5 is located at the intersection of the orthographic projections of the plurality of heating lamps and the outer edge of the second end of the silicon substrate.

[0128] For the description of specific functions and examples of each module and submodule of the device in the embodiment of the present disclosure, please refer to the relevant description of the corresponding steps in the above method embodiment, which will not be repeated here.

[0129] Figure 5FIG. 1 is a structural block diagram of an electronic device according to an embodiment of the present disclosure. Figure 5 As shown, the electronic device includes: a memory 510 and a processor 520. The memory 510 stores a computer program that can be executed on the processor 520. The number of memory 510 and processor 520 can be one or more. The memory 510 can store one or more computer programs. When the one or more computer programs are executed by the electronic device, the electronic device performs the method provided by the above method embodiment. The electronic device may also include: a communication interface 530 for communicating with external devices and performing data exchange.

[0130] If the memory 510, processor 520, and communication interface 530 are implemented independently, the memory 510, processor 520, and communication interface 530 can be connected to each other via a bus and communicate with each other. The bus can be an Industry Standard Architecture (ISA) bus, a Peripheral Component Interconnect (PCI) bus, or an Extended Industry Standard Architecture (EISA) bus. The bus can be divided into an address bus, a data bus, a control bus, etc. For ease of representation, Figure 5 Only one thick line is used in the diagram, but this does not mean that there is only one bus or one type of bus.

[0131] Optionally, in a specific implementation, if the memory 510, the processor 520 and the communication interface 530 are integrated on a chip, the memory 510, the processor 520 and the communication interface 530 can communicate with each other through an internal interface.

[0132] It should be understood that the processor may be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. The general-purpose processor may be a microprocessor or any conventional processor, etc. It is worth noting that the processor may be a processor that supports the Advanced RISC Machines (ARM) architecture.

[0133] Furthermore, optionally, the above-mentioned memory may include a read-only memory and a random access memory, and may also include a non-volatile random access memory. The memory may be a volatile memory or a non-volatile memory, or may include both volatile and non-volatile memories. Among them, the non-volatile memory may include a read-only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), or a flash memory. The volatile memory may include a random access memory (RAM), which is used as an external cache. By way of example but not limitation, many forms of RAM are available. For example, static random access memory (SRAM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), double data rate synchronous dynamic random access memory (DDR SDRAM), enhanced synchronous dynamic random access memory (ESDRAM), synchronous link dynamic random access memory (SLDRAM) and direct memory bus random access memory (DR RAM).

[0134] In the above embodiments, it can be implemented in whole or in part by software, hardware, firmware or any combination thereof. When implemented using software, it can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer instructions are loaded and executed on a computer, the process or function described in the embodiment of the present disclosure is generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network or other programmable device. The computer instructions can be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the computer instructions can be transmitted from one website, computer, server or data center to another website, computer, server or data center via a wired (e.g., coaxial cable, optical fiber, data subscriber line (DSL)) or wireless (e.g., infrared, Bluetooth, microwave, etc.) method. The computer-readable storage medium can be any available medium that a computer can access, or a data storage device such as a server or data center that includes one or more available media integrated. The available medium may be a magnetic medium (e.g., a floppy disk, a hard disk, or a magnetic tape), an optical medium (e.g., a digital versatile disc (DVD)), or a semiconductor medium (e.g., a solid-state drive (SSD)). It is worth noting that the computer-readable storage medium mentioned in the present disclosure may be a non-volatile storage medium, in other words, a non-transient storage medium.

[0135] Those skilled in the art will understand that all or part of the steps to implement the above embodiments may be accomplished by hardware, or by a program to instruct the relevant hardware, and the program may be stored in a computer-readable storage medium, which may be a read-only memory, a disk, or an optical disk, etc.

[0136] In the description of the embodiments of the present disclosure, the reference terms "one embodiment," "some embodiments," "example," "specific example," or "some examples" mean that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present disclosure. Moreover, the specific features, structures, materials, or characteristics described may be combined in any appropriate manner in any one or more embodiments or examples. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification, as well as features of different embodiments or examples, unless they are mutually inconsistent.

[0137] In the description of the embodiments of the present disclosure, unless otherwise specified, " / " means or. For example, A / B can mean A or B. "And / or" in this document is only a description of the association relationship between related objects, indicating that three relationships can exist. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone.

[0138] In the description of the embodiments of the present disclosure, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0139] The above description is merely an exemplary embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure shall be included in the scope of protection of the present disclosure.

Claims

1. A temperature adjustment and calibration method for heat treatment equipment, comprising: S1. Turning on a target heating lamp among a plurality of heating lamps in a heat treatment equipment and adjusting the target heating lamp to a first power value; wherein the heating lamp is a strip lamp; the first power value is determined according to a target process temperature and a power-temperature curve; S2. measuring first temperature values ​​at a plurality of first temperature measurement points corresponding to the target heating lamp; wherein the plurality of first temperature measurement points are arranged along the length direction of the target heating lamp; S3, adjusting the target heating lamp to a second power value according to an average value of the first temperature values ​​of the plurality of first temperature measurement points, so that the average value is the same as the target process temperature; S4. Measuring second temperature values ​​at a plurality of associated temperature measurement points at the second power value; wherein the plurality of associated temperature measurement points include the plurality of first temperature measurement points and at least one second temperature measurement point, the second temperature measurement points being arranged along a length direction of the target heating lamp, and the second temperature measurement point being on an extension line of a line connecting the plurality of first temperature measurement points; S5. When it is determined according to the second temperature value that the radiation energy difference of the target heating lamp meets the use requirement, calibrate the power-temperature curve according to the second power value.

2. The method according to claim 1, wherein S5. When it is determined according to the second temperature value that the radiant energy difference of the target heating lamp meets the use requirement, calibrating the power-temperature curve according to the second power value, including: Determining a difference between the second temperature value of each associated temperature measurement point and the target process temperature; When the difference corresponding to each of the associated temperature measurement points is smaller than a preset threshold, the power-temperature curve is calibrated according to the second power value.

3. The method according to claim 1, further comprising: S6. Turn off the target heating lamp, select an undetected heating lamp from the multiple heating lamps as a new target heating lamp, and repeat the above steps S1 to S5.

4. The method according to claim 1, further comprising: S7 . Update the target process temperature, and execute the above steps S1 to S5 for each of the plurality of heating lamps respectively; wherein the updated target process temperature is higher than the target process temperature before the update.

5. The method according to any one of claims 1 to 4, wherein The plurality of first temperature measurement points include: A temperature measurement point T1 is located at the first end of the area where the orthographic projections of the plurality of heating lamps overlap with the wafer outline; Temperature measurement point T2 is located at the second end of the area where the orthographic projections of the plurality of heating lamps overlap with the wafer outline; The temperature measurement point T3 is located at the center of the area where the orthographic projections of the multiple heating lamps overlap with the wafer outline.

6. The method according to claim 5, further comprising: placing a silicon substrate equipped with a plurality of temperature measuring devices in the center of the chamber of the heat treatment equipment; The plane where the silicon substrate is located is the same as the plane where the upper surface of the wafer is located when performing the heat treatment process, and the multiple temperature measuring devices are arranged on the multiple first temperature measuring points.

7. The method according to claim 6, wherein: The shape of the silicon substrate is the same as the shape of the horizontal cross section in the chamber, and the size of the silicon substrate is slightly smaller than the size of the horizontal cross section; The second temperature measurement point includes: A temperature measuring point T4 is located at the intersection of the orthographic projections of the plurality of heating lamps and the outer edge of the first end of the silicon substrate; and / or The temperature measuring point T5 is located at the intersection of the orthographic projections of the plurality of heating lamps and the outer edge of the second end of the silicon substrate.

8. The method according to claim 7, wherein: For the edge heating lamp whose orthographic projection does not coincide with the wafer outline, the T3 temperature measuring point is set at the vertical point of the center point of the edge heating lamp on the silicon substrate, the T1 temperature measuring point is set at the vertical point of the center point of the T3 temperature measuring point and the T4 temperature measuring point on the silicon substrate, and the T2 temperature measuring point is set at the vertical point of the center point of the T3 temperature measuring point and the T5 temperature measuring point on the silicon substrate.

9. The method according to claim 2, wherein: The preset threshold is determined according to the temperature control accuracy and adjustment coefficient of the chamber.

10. A temperature adjustment and calibration device for heat treatment equipment, comprising: a first adjustment module, configured to individually turn on a target heating lamp among a plurality of heating lamps in a heat treatment device and adjust the target heating lamp to a first power value; wherein the heating lamp is a strip lamp; and the first power value is determined according to a target process temperature and a power-temperature curve; a first measuring module, configured to measure first temperature values ​​of a plurality of first temperature measuring points corresponding to the target heating lamp; wherein the plurality of first temperature measuring points are arranged along the length direction of the target heating lamp; a second regulating module, configured to regulate the target heating lamp to a second power value according to an average value of the first temperature values ​​of the plurality of first temperature measuring points, so that the average value is the same as the target process temperature; a second measuring module, configured to measure second temperature values ​​of a plurality of associated temperature measurement points at the second power value; wherein the plurality of associated temperature measurement points include the plurality of first temperature measurement points and at least one second temperature measurement point, the second temperature measurement points being arranged along the length direction of the target heating lamp, and the second temperature measurement point being on an extension line of a line connecting the plurality of first temperature measurement points; The calibration module is used to calibrate the power-temperature curve according to the second power value when it is determined according to the second temperature value that the radiation energy difference of the target heating lamp meets the use requirement.

11. An electronic device comprising: at least one processor; as well as a memory communicatively connected to the at least one processor; wherein, The memory stores instructions that can be executed by the at least one processor, and the instructions are executed by the at least one processor to enable the at least one processor to perform the method according to any one of claims 1 to 9.

12. A non-transitory computer-readable storage medium storing computer instructions, wherein: The computer instructions are used to cause the computer to execute the method according to any one of claims 1 to 9.

13. A computer program product comprising a computer program, which, when executed by a processor, implements the method according to any one of claims 1 to 9.

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