A perovskite solar cell and its preparation method

Abstract

The present invention provides a perovskite solar cell and a preparation method thereof. In the perovskite solar cell, an interface modification layer is added between an electron transport layer and a perovskite light-absorbing layer. The material of the interface modification layer is a fluorine-containing organic salt material, and the components of the fluorine-containing organic salt material include an amidine group and a sulfonyl group. The present invention utilizes the amidine group in the interface modification layer to passivate cationic defects in the perovskite light-absorbing layer, and utilizes the sulfonyl group in the interface modification layer to achieve an effective connection between the perovskite light-absorbing layer and the electron transport layer, thereby enhancing the interface contact between the perovskite light-absorbing layer and the electron transport layer, and significantly improving the efficiency and stability of the perovskite solar cell.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and more specifically, to a perovskite solar cell and a preparation method thereof, and in particular to a perovskite solar cell based on an interface modification layer and a preparation method thereof. Background Art

[0002] Halide perovskite materials have attracted significant attention from researchers in recent years due to their excellent optical properties and simple preparation. Certified perovskite solar cells have achieved efficiency exceeding 25%. In perovskite solar cells, the electron transport layer (ETL) plays a crucial role in extracting and separating electrons and blocking holes. Therefore, selecting the right ETL material can accelerate electron extraction and reduce non-radiative recombination at the interface between the ETL and the perovskite layer, which is crucial for improving the optoelectronic performance of perovskite solar cells.

[0003] At present, SnO2 is a commonly used electron transport layer material in perovskite solar cells. However, due to the poor lattice matching between perovskite material and SnO2, the bonding between the perovskite layer and the SnO2 electron transport layer is poor. In addition, there are many interface defects between the perovskite layer and the SnO2 electron transport layer. Ordinary perovskite passivation methods are difficult to passivate the interface between the perovskite layer and the SnO2 electron transport layer. The above problems will lead to limited carrier transport in perovskite solar cells and non-radiative recombination at the interface, which will ultimately affect the photoelectric conversion efficiency and stability of the entire perovskite solar cell.

[0004] Therefore, how to solve the poor bonding between the perovskite layer and the SnO2 electron transport layer and how to passivate the interface defects between the perovskite layer and the SnO2 electron transport layer are problems that need to be solved urgently by those skilled in the art. Summary of the Invention

[0005] In view of this, in order to solve the above problems, the present invention provides a perovskite solar cell and a preparation method thereof, and the technical solution is as follows:

[0006] A perovskite solar cell, comprising:

[0007] substrate;

[0008] In a first direction, an electron transport layer, an interface modification layer, and a perovskite light absorbing layer are sequentially located on one side of the substrate, wherein the first direction is perpendicular to the plane of the substrate and points from the substrate to the electron transport layer;

[0009] Wherein, the material of the interface modification layer is a fluorine-containing organic salt material, and the components of the fluorine-containing organic salt material include amidine group and sulfonyl group.

[0010] Preferably, in the above perovskite solar cell, the fluorine-containing organic salt material is (4-amidinophenyl)methanesulfonyl fluoride hydrochloride.

[0011] Preferably, in the above perovskite solar cell, the perovskite solar cell further comprises:

[0012] In the first direction, a hole transport layer and an electrode are sequentially located on a side of the perovskite light absorbing layer facing away from the substrate.

[0013] Preferably, in the above-mentioned perovskite solar cell, the material of the electron transport layer is SnO2 material.

[0014] Preferably, in the above perovskite solar cell, the substrate is a FTO conductive substrate or an ITO conductive substrate.

[0015] Preferably, in the above-mentioned perovskite solar cell, the material of the perovskite light-absorbing layer is a halide perovskite material, and the crystal structure of the halide perovskite material is ABX3, wherein the A position is an organic cation or an inorganic cation, the B position is a divalent metal ion, and the X position is a halide ion.

[0016] Preferably, in the above perovskite solar cell, the thickness of the electron transport layer ranges from 20 nm to 40 nm;

[0017] The thickness of the interface modification layer ranges from 1 nm to 10 nm;

[0018] The thickness of the perovskite light-absorbing layer ranges from 200 nm to 800 nm.

[0019] Preferably, in the above perovskite solar cell, the material of the hole transport layer is Spiro-OMeTAD;

[0020] The thickness of the hole transport layer ranges from 100 nm to 300 nm;

[0021] The material of the electrode is silver, gold or copper.

[0022] The present application also provides a method for preparing a perovskite solar cell, which is used to prepare the above-mentioned perovskite solar cell, and the method comprises:

[0023] providing a substrate;

[0024] In a first direction, an electron transport layer, an interface modification layer, and a perovskite light absorption layer are sequentially formed on one side of the substrate, wherein the first direction is perpendicular to the plane of the substrate and points from the substrate to the electron transport layer;

[0025] Wherein, the material of the interface modification layer is a fluorine-containing organic salt material, and the components of the fluorine-containing organic salt material include amidine group and sulfonyl group.

[0026] Preferably, in the above-mentioned method for preparing a perovskite solar cell, the method further comprises:

[0027] In the first direction, a hole transport layer and an electrode are sequentially formed on a side of the perovskite light absorbing layer facing away from the substrate.

[0028] Compared with the prior art, the present invention has the following beneficial effects:

[0029] The present invention provides a perovskite solar cell and a preparation method thereof. In the perovskite solar cell, an interface modification layer is added between an electron transport layer and a perovskite light-absorbing layer. The material of the interface modification layer is a fluorine-containing organic salt material, and the components of the fluorine-containing organic salt material include amidine groups and sulfonyl groups. The present invention utilizes the amidine groups in the interface modification layer to passivate cationic defects in the perovskite light-absorbing layer, and utilizes the sulfonyl groups in the interface modification layer to achieve effective connection between the perovskite light-absorbing layer and the electron transport layer, thereby enhancing the interface contact between the perovskite light-absorbing layer and the electron transport layer, and significantly improving the efficiency and stability of the perovskite solar cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are merely embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.

[0031] Figure 1 This is one of the structural schematic diagrams of a perovskite solar cell provided by an embodiment of the present invention;

[0032] Figure 2 A second structural diagram of another perovskite solar cell provided by an embodiment of the present invention;

[0033] Figure 3 One of the flow diagrams of a method for preparing a perovskite solar cell provided in an embodiment of the present invention;

[0034] Figure 4 A second flow chart of another method for preparing a perovskite solar cell provided by an embodiment of the present invention;

[0035] Figure 5 A third flow chart of a method for preparing a perovskite solar cell provided in an embodiment of the present invention;

[0036] Figure 6 A fourth flow chart of a method for preparing a perovskite solar cell provided in an embodiment of the present invention;

[0037] Figure 7 A fifth flow chart of a method for preparing a perovskite solar cell provided in an embodiment of the present invention;

[0038] Figure 8 One of the graphs showing the change in current density versus voltage for a perovskite solar cell provided in an embodiment of the present invention;

[0039] Figure 9 A second graph showing current density versus voltage variation for another perovskite solar cell provided by an embodiment of the present invention;

[0040] Figure 10 A third graph showing the variation of current density with voltage for another perovskite solar cell provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0041] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0042] Based on the content recorded in the background technology, the inventors found in the process of the invention of the present invention that due to the poor lattice matching between the perovskite material and SnO2, the bonding between the perovskite layer and the SnO2 electron transport layer is poor, and there are still many defects at the interface between the perovskite layer and the SnO2 electron transport layer. It is difficult to passivate it by ordinary perovskite passivation methods, resulting in limited carrier transport in the perovskite solar cell and non-radiative recombination at the interface, which ultimately affects the photoelectric transmission efficiency and stability of the entire perovskite solar cell. Therefore, the embodiment of the present invention provides a perovskite solar cell and a preparation method thereof, which can be used to improve the bonding between the perovskite layer and the electron transport layer, and passivate the interface defects between the perovskite layer and the electron transport layer.

[0043] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0044] The embodiment of the present invention provides a perovskite solar cell, referring to Figure 1 , Figure 1 This is one of the structural diagrams of a perovskite solar cell provided by an embodiment of the present invention, combined with Figure 1 , the perovskite solar cell comprises:

[0045] A substrate 1; an electron transport layer 2, an interface modification layer 3, and a perovskite light absorption layer 4 are sequentially located on one side of the substrate 1 in a first direction Y, wherein the first direction Y is perpendicular to the plane of the substrate 1 and points from the substrate 1 to the electron transport layer 2; wherein the material of the interface modification layer 3 is a fluorine-containing organic salt material, and the components of the fluorine-containing organic salt material include an amidine group and a sulfonyl group.

[0046] Specifically, in an embodiment of the present invention, the substrate 1 includes but is not limited to an FTO conductive substrate or an ITO conductive substrate, etc.; the material of the electron transport layer 2 includes but is not limited to a SnO2 material, etc., and the thickness of the electron transport layer 2 in the first direction Y can take any value in the range of 20nm-40nm, for example, the thickness of the electron transport layer 2 in the first direction Y can be 20nm, 35nm, 40nm, etc.; the material of the interface modification layer 3 includes but is not limited to a fluorine-containing organic salt material, etc., and the fluorine-containing organic salt material includes but is not limited to (4-amidinophenyl) methanesulfonyl fluoride hydrochloride, etc., and it is necessary to ensure that the components of the fluorine-containing organic salt material have both an amidine group and a sulfonyl group, and the interface modification layer 3 has a thickness of 20nm-40nm. The thickness of the decorative layer 3 in the first direction Y can take any value in the range of 1nm-10nm. For example, the thickness of the interface modification layer 3 in the first direction Y can be 1nm, 5nm, 10nm, etc.; the material of the perovskite light absorption layer 4 is a halide perovskite material, and the crystal structure of the halide perovskite material is ABX3, wherein the A position is an organic cation or an inorganic cation, the B position is a divalent metal ion, and the X position is a halogen ion. The thickness of the perovskite light absorption layer 4 in the first direction Y can take any value in the range of 200nm-800nm. For example, the thickness of the perovskite light absorption layer 4 in the first direction Y can be 200nm, 4500nm, 800nm, etc.

[0047] From the above description, it can be seen that an embodiment of the present invention provides a perovskite solar cell and a preparation method thereof, in which an interface modification layer 3 is added between the electron transport layer 2 and the perovskite light absorption layer 4 in the perovskite solar cell, and the material of the interface modification layer 3 is a fluorine-containing organic salt material, and the components of the fluorine-containing organic salt material include amidine groups and sulfonyl groups; the present invention utilizes the amidine groups in the interface modification layer 3 to passivate the cationic defects in the perovskite light absorption layer 4, and utilizes the sulfonyl groups in the interface modification layer 3 to achieve effective connection between the perovskite light absorption layer 4 and the electron transport layer 2, thereby enhancing the interface contact 2 between the perovskite light absorption layer 4 and the electron transport layer; adding the interface modification layer 3 can not only effectively improve the electrical properties of SnO2, but also passivate the surface of the perovskite light absorption layer 4 facing the electron transport layer 2, thereby improving perovskite crystallization, thereby significantly improving the efficiency and stability of the perovskite solar cell.

[0048] Optionally, in another embodiment of the present invention, the structure of the above-mentioned perovskite solar cell is further described, referring to Figure 2 , Figure 2 The second structural diagram of another perovskite solar cell provided by the embodiment of the present invention, combined with Figure 2 , the perovskite solar cell further comprises:

[0049] In the first direction Y, the hole transport layer 5 and the electrode 6 are sequentially located on the side of the perovskite light absorbing layer 4 facing away from the substrate 1 .

[0050] Specifically, in an embodiment of the present invention, the material of the hole transport layer 5 includes but is not limited to Spiro-OMeTAD, etc., and the thickness of the hole transport layer 5 in the first direction Y can take any value in the range of 100nm-300nm. For example, the thickness of the hole transport layer 5 in the first direction Y can be 100nm, 150nm, 300nm, etc.; the material of the electrode 6 includes but is not limited to one of the materials such as silver, gold or copper, or a combination of the above materials. The electrode 6 can be used as the top electrode of the perovskite solar cell, and the substrate 1 can be used as the bottom electrode of the perovskite solar cell.

[0051] Optionally, in another embodiment of the present invention, a method for preparing a perovskite solar cell is provided, wherein the method is used to prepare the perovskite solar cell described in any one of the above embodiments, with reference to Figure 3 , Figure 3 One of the flow diagrams of a method for preparing a perovskite solar cell provided by an embodiment of the present invention, combined with Figure 3 , the preparation method comprises:

[0052] S100 , providing a substrate 1 .

[0053] Specifically, in step S100, the substrate 1 includes but is not limited to an FTO conductive substrate or an ITO conductive substrate.

[0054] S200 , forming an electron transport layer 2 on one side of the substrate 1 .

[0055] Specifically, in step S200, forming the electron transport layer 2 includes but is not limited to forming the electron transport layer 2 on one side of the substrate 1 by methods such as scraping, spin coating, spraying, chemical bath deposition or atomic layer deposition. The material of the electron transport layer 2 includes but is not limited to SnO2 material, etc. The thickness of the electron transport layer 2 in the first direction Y can take any value in the range of 20nm-40nm.

[0056] S300 , forming an interface modification layer 3 on a side of the electron transport layer 2 facing away from the substrate 1 ; wherein the material of the interface modification layer 3 is a fluorine-containing organic salt material, and the components of the fluorine-containing organic salt material include amidine groups and sulfonyl groups.

[0057] Specifically, in step S300, the material of the interface modification layer 3 includes but is not limited to a fluorine-containing organic salt material, and the fluorine-containing organic salt material includes but is not limited to (4-amidinophenyl) methanesulfonyl fluoride hydrochloride, etc. It is necessary to ensure that the components of the fluorine-containing organic salt material have both an amidine group and a sulfonyl group. The thickness of the interface modification layer 3 in the first direction Y can take any value in the range of 1nm-10nm.

[0058] S400 , forming a perovskite light absorption layer 4 on a side of the interface modification layer 3 facing away from the electron transport layer 2 .

[0059] Specifically, in step S400, the material of the perovskite light absorbing layer 4 is a halide perovskite material, and the crystal structure of the halide perovskite material is ABX3, wherein the A position is an organic cation or an inorganic cation, the B position is a divalent metal ion, and the X position is a halide ion. The thickness of the perovskite light absorbing layer 4 in the first direction Y can take any value in the range of 200nm-800nm.

[0060] Optionally, in another embodiment of the present invention, the preparation method of the above-mentioned perovskite solar cell is further described, and the fluorine-containing organic salt material is (4-amidinophenyl) methanesulfonyl fluoride hydrochloride as an example. Before forming the interface modification layer 3 in step S300, the preparation method further includes:

[0061] S500, preparing a (4-amidinophenyl)methanesulfonyl fluoride hydrochloride solution.

[0062] Specifically, in step S500, (4-amidinophenyl) methanesulfonyl fluoride hydrochloride is dissolved in a solvent to obtain a (4-amidinophenyl) methanesulfonyl fluoride hydrochloride solution, wherein the solvent of the (4-amidinophenyl) methanesulfonyl fluoride hydrochloride solution is one of water, ethanol, isopropanol or methanol, or a combination of the above solvents, and the concentration of the (4-amidinophenyl) methanesulfonyl fluoride hydrochloride solution can be any value in the range of 0.1 mg / mL-5 mg / mL, for example, the concentration of the (4-amidinophenyl) methanesulfonyl fluoride hydrochloride solution can be 0.1 mg / mL, 3 mg / mL, 5 mg / mL, etc.; after completing step S500, the (4-amidinophenyl) methanesulfonyl fluoride hydrochloride solution is obtained. After preparing the (4-amidinophenyl) methanesulfonyl fluoride hydrochloride solution, the (4-amidinophenyl) methanesulfonyl fluoride hydrochloride solution is applied to the side of the electron transport layer 2 facing away from the substrate 1 by a method including but not limited to spin coating, blade coating or slit coating, and then annealing is performed to form an interface modification layer 3. The annealing temperature can be any value in the range of 60°C-150°C, for example, the annealing temperature can be 60°C, 100°C, 150°C, etc.; the annealing time can be any value in the range of 5min-20min, for example, the annealing time can be 5min, 10min, 20min, etc.

[0063] It should be noted that the preparation of the (4-amidinophenyl)methanesulfonyl fluoride hydrochloride solution in step S500 must be completed before the formation of the interface modification layer 3 in step S300; Figure 4 As shown, Figure 4 The second flow chart of another method for preparing a perovskite solar cell provided by an embodiment of the present invention is as follows: Figure 4 The step S500 of preparing a (4-amidinophenyl)methanesulfonyl fluoride hydrochloride solution is performed before providing a substrate 1 in step S100; or it may be as follows Figure 5 As shown, Figure 5 The third flow chart of another method for preparing a perovskite solar cell provided in an embodiment of the present invention is as follows: Figure 5 The process of preparing (4-amidinophenyl)methanesulfonyl fluoride hydrochloride solution in step S500 is performed after providing a substrate 1 in step S100 and before forming the electron transport layer 2 in step S200; or it can be performed as follows Figure 6 As shown, Figure 6 The fourth flow chart of another method for preparing a perovskite solar cell provided in an embodiment of the present invention is as follows: Figure 6 The process of preparing the (4-amidinophenyl)methanesulfonyl fluoride hydrochloride solution in step S500 is performed after forming the electron transport layer 2 in step S200 and before forming the interface modification layer 3 in step S300.

[0064] Optionally, in another embodiment of the present invention, the above-mentioned method for preparing a perovskite solar cell is further described, referring to Figure 7 , Figure 7 A fifth flow chart of a method for preparing a perovskite solar cell according to an embodiment of the present invention is provided, Figure 7 , taking the step S500 of preparing the (4-amidinophenyl)methanesulfonyl fluoride hydrochloride solution as an example, which is performed after forming the electron transport layer 2 in step S200 and before forming the interface modification layer 3 in step S300, after forming the perovskite light absorption layer 4 in step S400, the preparation method further includes:

[0065] S600 , in the first direction Y, sequentially forming a hole transport layer 5 and an electrode 6 on a side of the perovskite light absorbing layer 4 facing away from the substrate 1 .

[0066] Specifically, in an embodiment of the present invention, the material of the hole transport layer 5 includes but is not limited to Spiro-OMeTAD, etc., and the thickness of the hole transport layer 5 in the first direction Y can take any value in the range of 100nm-300nm; the material of the electrode 6 includes but is not limited to one of the materials such as silver, gold or copper, or a combination of the above materials. The electrode 6 can serve as the top electrode of the perovskite solar cell, and the substrate 1 can serve as the bottom electrode of the perovskite solar cell.

[0067] Optionally, based on the above-mentioned perovskite solar cell and its preparation method, another embodiment of the present invention further provides several optional implementation methods for forming a perovskite solar cell, which are described in detail as follows:

[0068] The first method: clean the FTO glass substrate with acetone, isopropyl alcohol and deionized water in turn, blow dry it and then treat it with ultraviolet ozone for 20 minutes; add 1 mL of SnO2 dispersion to 9 mL of water to prepare SnO2 spin coating solution; drop 100 microliters of SnO2 spin coating solution on the FTO glass substrate, spin coat at a speed of 4000 rpm for 20 seconds, and anneal at 180°C for 30 minutes to obtain a SnO2 electron transport layer. 10 mg of (4-amidinophenyl)methanesulfonyl fluoride hydrochloride was dissolved in 10 mL of ethanol, and 100 microliters was dropped on the SnO2 electron transport layer, and the mixture was spin-coated at a spin coating speed of 4000 rpm for 20 seconds, and annealed at 100°C for 10 minutes to form an interface modification layer 3; a CsPbI3 perovskite precursor solution was prepared in a nitrogen glove box, wherein the solutes in the perovskite precursor solution were CsI, PbI2 and DMAI, the molar ratio of the solutes was 1:1:1, the concentration was 0.8 mol / L, and the solvent was DMF; 50 microliters of the perovskite precursor solution was dropped on the interface modification layer 3, and the mixture was spin-coated at a spin coating speed of 4000 rpm for 30 seconds, and annealed at 200°C for 5 minutes to obtain a perovskite light absorption layer 4. 72 mg of Spiro-OMeTAD and 39 μL of 4-tert-butylpyridine were dissolved in 1 mL of chlorobenzene, and 23 μL of 520 mg / mL acetonitrile solution of lithium bis(trifluoromethanesulfonyl)imide was added and mixed evenly. The hole transport layer 5 was prepared on the perovskite light absorbing layer 4 by spin coating at a speed of 3000 rpm for 30 seconds. Finally, the hole transport layer 5 was prepared by vacuum evaporation at a vacuum degree of less than 10 -4 Pa, the deposition rate is A silver electrode was prepared under the conditions of , and finally a perovskite solar cell was obtained; wherein the thickness of the SnO2 electron transport layer in the perovskite solar cell prepared in the embodiment of the present invention was 20 nm, the thickness of the interface modification layer 3 was 2 nm, the thickness of the perovskite light absorption layer 4 was 400 nm, the thickness of the hole transport layer 5 was 200 nm, and the thickness of the silver electrode was 70 nm.

[0069] The second method: Compared with the first preparation method, the thickness of the interface modification layer 3 prepared by the second preparation method is different from that of the first preparation method; the FTO glass substrate is cleaned with acetone, isopropyl alcohol, and deionized water in sequence, blown dry, and then treated with ultraviolet ozone for 20 minutes; 1 mL of SnO2 dispersion is added to 9 mL of water to prepare a SnO2 spin coating solution; 100 microliters of SnO2 spin coating solution is dropped on the FTO glass substrate, spin-coated at a spin coating speed of 4000 rpm for 20 seconds, and annealed at 180°C for 30 minutes to obtain a SnO2 electron transport layer. 30 mg of (4-amidinophenyl)methanesulfonyl fluoride hydrochloride was dissolved in 10 mL of ethanol, and 100 microliters was dropped on the SnO2 electron transport layer, and the mixture was spin-coated at a spin coating speed of 4000 rpm for 20 seconds, and annealed at 100°C for 10 minutes to form an interface modification layer 3; a CsPbI3 perovskite precursor solution was prepared in a nitrogen glove box, wherein the solutes in the perovskite precursor solution were CsI, PbI2 and DMAI, the molar ratio of the solutes was 1:1:1, the concentration was 0.8 mol / L, and the solvent was DMF; 50 microliters of the perovskite precursor solution was dropped on the interface modification layer 3, and the mixture was spin-coated at a spin coating speed of 4000 rpm for 30 seconds, and annealed at 200°C for 5 minutes to obtain a perovskite light absorption layer 4. 72 mg of Spiro-OMeTAD and 39 μL of 4-tert-butylpyridine were dissolved in 1 mL of chlorobenzene, and 23 μL of 520 mg / mL acetonitrile solution of lithium bis(trifluoromethanesulfonyl)imide was added and mixed evenly. The hole transport layer 5 was prepared on the perovskite light absorbing layer 4 by spin coating at a speed of 3000 rpm for 30 seconds. Finally, the hole transport layer 5 was prepared by vacuum evaporation at a vacuum degree of less than 10 -4 Pa, the deposition rate is A silver electrode was prepared under the conditions of , and finally a perovskite solar cell was obtained; wherein the thickness of the SnO2 electron transport layer in the perovskite solar cell prepared in the embodiment of the present invention was 20 nm, the thickness of the interface modification layer 3 was 6 nm, the thickness of the perovskite light absorption layer 4 was 400 nm, the thickness of the hole transport layer 5 was 200 nm, and the thickness of the silver electrode was 70 nm.

[0070] The perovskite solar cells prepared by the above two preparation methods were tested and compared with the perovskite solar cells without the interface modification layer 3. Figures 8-10 , Figure 8 One of the curves showing the change in current density versus voltage of a perovskite solar cell provided in an embodiment of the present invention, Figure 9 The second graph showing the change in current density versus voltage for another perovskite solar cell provided in an embodiment of the present invention is: Figure 10 The third graph of the current density versus voltage variation of another perovskite solar cell provided in an embodiment of the present invention, combined with Figures 8-10 The comparison results are as follows:

[0071] At room temperature, using a 3A solar simulator, at 100mW / cm 2 The photoelectric conversion efficiency of three perovskite solar cells was tested under a light intensity of 0.09 cm. The effective area of ​​the three perovskite solar cells was 0.09 cm. 2 ;like Figure 8 As shown, the perovskite solar cell prepared by the first preparation method was tested, and the short-circuit current density of the perovskite solar cell was 20.84 mA / cm 2 , the open circuit voltage is 1.143V, the fill factor is 77.49%, and the photoelectric conversion efficiency is 18.48%; Figure 9 As shown, the perovskite solar cell prepared by the second preparation method was tested, and the short-circuit current density of the perovskite solar cell was 20.47 mA / cm 2 , the open circuit voltage is 1.165V, the fill factor is 78.54%, and the photoelectric conversion efficiency is 18.74%; Figure 10 As shown, the perovskite solar cell without the interface modification layer 3 was tested, and the short-circuit current density of the perovskite solar cell was 19.93 mA / cm 2 , the open circuit voltage is 1.112V, the fill factor is 72.34%, and the photoelectric conversion efficiency is 16.04%; by comparing the test results of the above three perovskite solar cells, it can be seen that the photoelectric conversion efficiency of the perovskite solar cell with the interface modification layer 3 is higher than the photoelectric conversion efficiency of the perovskite solar cell without the interface modification layer 3.

[0072] The above is a detailed introduction to a perovskite solar cell and a preparation method thereof provided by the present invention. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the ideas of the present invention, there may be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as limiting the present invention.

[0073] It should be noted that the various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. Reference can be made to the common and similar parts between the various embodiments. For the devices disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the description is relatively simple, and the relevant parts can be referred to the method description.

[0074] It should also be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that the process, method, article, or apparatus comprising a series of elements inherent to the elements, or also including elements inherent to these processes, methods, articles, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus comprising the element.

[0075] The above description of the disclosed embodiments is intended to enable one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not limited to the embodiments shown herein but is intended to conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A perovskite solar cell, characterized in that The perovskite solar cell comprises: substrate; In a first direction, an electron transport layer, an interface modification layer, and a perovskite light absorbing layer are sequentially located on one side of the substrate, wherein the first direction is perpendicular to the plane of the substrate and points from the substrate to the electron transport layer; Wherein, the material of the interface modification layer is a fluorine-containing organic salt material, and the components of the fluorine-containing organic salt material include amidine group and sulfonyl group; The fluorine-containing organic salt material is (4-amidinophenyl)methanesulfonyl fluoride hydrochloride.

2. The perovskite solar cell according to claim 1, characterized in that The perovskite solar cell further comprises: In the first direction, a hole transport layer and an electrode are sequentially located on a side of the perovskite light absorbing layer facing away from the substrate.

3. The perovskite solar cell according to claim 1, wherein The material of the electron transport layer is SnO2 material.

4. The perovskite solar cell according to claim 1, wherein The substrate is a FTO conductive substrate or an ITO conductive substrate.

5. The perovskite solar cell according to claim 1, wherein The material of the perovskite light-absorbing layer is a halide perovskite material, and the crystal structure of the halide perovskite material is ABX3, wherein the A position is an organic cation or an inorganic cation, the B position is a divalent metal ion, and the X position is a halide ion.

6. The perovskite solar cell according to claim 1, characterized in that The thickness of the electron transport layer ranges from 20 nm to 40 nm; The thickness of the interface modification layer ranges from 1 nm to 10 nm; The thickness of the perovskite light-absorbing layer ranges from 200 nm to 800 nm.

7. The perovskite solar cell according to claim 2, characterized in that The material of the hole transport layer is Spiro-OMeTAD; The thickness of the hole transport layer ranges from 100 nm to 300 nm; The material of the electrode is silver, gold or copper.

8. A method for preparing a perovskite solar cell, characterized in that: The preparation method is used to prepare the perovskite solar cell according to any one of claims 1 to 7, and the preparation method comprises: providing a substrate; In a first direction, an electron transport layer, an interface modification layer, and a perovskite light absorption layer are sequentially formed on one side of the substrate, wherein the first direction is perpendicular to the plane of the substrate and points from the substrate to the electron transport layer; Wherein, the material of the interface modification layer is a fluorine-containing organic salt material, and the components of the fluorine-containing organic salt material include amidine group and sulfonyl group.

9. The preparation method according to claim 8, characterized in that The preparation method further comprises: In the first direction, a hole transport layer and an electrode are sequentially formed on a side of the perovskite light absorbing layer facing away from the substrate.

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