Substrate structure, substrate processing apparatus and temperature control method

Abstract

The invention provides a stage structure for cooling a stage on which a substrate is placed, a substrate processing apparatus, and a temperature control method. The stage structure includes: a plurality of stages on which a substrate is placed; the cooling plate is shared by the plurality of carrying tables; the refrigerating machine is used for cooling the cooling plate; and the lifting device can be used for thermally connecting or separating the first contact surfaces of the plurality of carrying tables from the second contact surfaces of the cooling plates.

Description

Technical Field

[0001] The invention relates to a carrier structure, a substrate processing device and a temperature control method. Background Art

[0002] Patent document 1 discloses a substrate loading mechanism for loading a substrate for film formation in a film forming device, and includes a stage having a substrate loading surface for loading the substrate, a cooling head arranged opposite to the substrate loading surface of the stage and cooled to an extremely low temperature by a refrigerator, a contact / separation mechanism for bringing the stage into contact with / separated from the cooling head, a rotation mechanism for rotating the stage, and a control unit, wherein the control unit, except during film formation, brings the stage and the cooling head into contact with each other through the contact / separation mechanism and loads the substrate on the stage in this state, and during film formation, rotates the stage through the rotation mechanism in a state in which the stage and the cooling head are separated by the contact / separation mechanism.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2020-47624 Summary of the invention

[0004] <Problems to be Solved by the Invention>

[0005] In one aspect, the present invention provides a stage structure, a substrate processing apparatus, and a temperature control method for cooling a stage on which a substrate is mounted.

[0006] <Methods used to solve the problem>

[0007] To solve the above-mentioned problem, according to one aspect, a carrier structure is provided, comprising: a plurality of carriers for placing substrates; a cooling plate shared by the plurality of the carriers; a refrigerator for cooling the cooling plate; and a lifting device capable of thermally connecting or separating the first contact surfaces of the plurality of the carriers with the second contact surface of the cooling plate.

[0008] <Effects of the Invention>

[0009] According to one aspect, it is possible to provide a stage structure, a substrate processing apparatus, and a temperature control method for cooling a stage on which a substrate is mounted. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 This is an example of a cross-sectional view showing the structure of a substrate processing apparatus including the stage structure according to the present embodiment.

[0011] Figure 2 is a block diagram illustrating a heater controller that controls a heater.

[0012] Figure 3This is a graph showing an example of temperature control.

[0013] Figure 4 This is a graph showing an example of temperature change of the stage in the reference example.

[0014] Figure 5 This is a graph showing an example of temperature change of the stage in this embodiment.

[0015] Figure 6 This is an example of a schematic cross-sectional view showing the state of the stage in each step.

[0016] Figure 7 This is a timing chart showing an example of the operation of the substrate processing apparatus.

[0017] Figure 8 It is a schematic diagram showing an example of a stage structure.

[0018] Fig. 9 It is a schematic diagram showing an example of a stage structure.

[0019] Fig.10 This is an enlarged view showing an example of the shape of the through hole. DETAILED DESCRIPTION

[0020] Hereinafter, the mode for implementing the present invention will be described with reference to the drawings. In each figure, the same component is sometimes denoted by the same reference numeral and repeated description is omitted.

[0021] use Figure 1 An example of a substrate processing apparatus 1 including the stage structure according to the present embodiment will be described. Figure 1 This is an example of a cross-sectional view showing the structure of a substrate processing apparatus 1 including the stage structure according to the present embodiment.

[0022] Here, if Figure 1 As shown, the substrate processing device 1 is a substrate processing device (such as a PVD (Physical Vapor Deposition) device, etc.) that supplies processing gas into the processing container 2 and sputters the target 31 set in the processing container 2 to perform desired processing (such as film forming processing, etc.) on the substrate W. It should be noted that the substrate processing device 1 having the carrier structure of this embodiment is described as a PVD device as an example, but is not limited to this. For example, it can also be a substrate processing device (such as a CVD (Chemical Vapor Deposition) device, an ALD (Atomic Layer Deposition) device, etc.) that supplies processing gas into the processing container 2 and performs desired processing (such as film forming processing, etc.) on the substrate W.

[0023] The substrate processing apparatus 1 includes a processing container 2, a sputtered particle discharge unit 3, a plurality of stages 4 (4A, 4B) on which substrates W are placed, a refrigeration device 5 shared by the plurality of stages 4, a stage rotating mechanism 6 for rotating the stage 4, a stage lifting mechanism 7 for lifting the stage 4, a heater controller 8, and a control unit 9. In addition, a structure supporting the substrate W in the substrate processing apparatus 1 is also referred to as a stage structure. Specifically, the stage structure includes a plurality of stages 4 (4A, 4B), the refrigeration device 5, the stage rotating mechanism 6, the stage lifting mechanism 7, and the heater controller 8.

[0024] The processing container 2 forms an internal space 2S. The processing container 2 is configured to reduce the pressure of the internal space 2S to an ultra-high vacuum by operating an exhaust device (not shown) such as a vacuum pump. In addition, the processing container 2 has a gas introduction port (not shown) for supplying a processing gas from a processing gas supply unit. In the PVD device, a sputtering gas (for example, an inert gas) is introduced into the internal space 2S as a processing gas from the gas introduction port.

[0025] The sputtering particle emitting unit 3 includes a target 31 and a sputtering power supply 32. The target 31 is made of a material containing constituent elements of the film to be formed. The target 31 is held on a conductive target holder (not shown). In addition, the target holder is held in the processing container 2 via an insulating component (not shown). The sputtering power supply 32 is electrically connected to the target holder. The sputtering power supply 32 can be a DC power supply when the target 31 is a conductive material, and can be a high-frequency power supply when the target 31 is a dielectric material. When the sputtering power supply 32 is a high-frequency power supply, the sputtering power supply is connected to the target holder through an integrator. By applying a voltage to the target holder, the sputtering gas is dissociated around the target 31. Then, the ions in the dissociated sputtering gas collide with the target 31, and particles of its constituent material, i.e., sputtering particles, are emitted from the target 31.

[0026] A plurality of stages 4 (4A, 4B) for mounting substrates W are provided inside the processing container 2. Figure 1 In the example shown, the substrate processing apparatus 1 includes two stages 4A and 4B. The stage 4 is formed of a material with high thermal conductivity (for example, copper (pure copper), aluminum, etc.). In addition, the heat capacity of the stage 4 is sufficiently larger than that of the substrate W.

[0027] In addition, the carrier 4 includes an electrostatic chuck. The electrostatic chuck has a chuck electrode 41 embedded in a dielectric film. The chuck electrode 41 is connected to the chuck power supply 42 via a slip ring 63 described later, and a predetermined potential is applied. According to this structure, the substrate W can be fixed on the upper surface (substrate mounting surface) of the carrier 4 by adsorbing the substrate W by the electrostatic chuck. In addition, the carrier 4 can be configured in either an ascending position or a descending position by the carrier lifting mechanism 7. The ascending position is a position where the first contact surface 4S of the carrier 4 is separated from the second contact surface 521S of the cooling plate 52 described later. And, the ascending position is a position (carrier rotation position) where the carrier 4 can be rotated by the carrier rotating mechanism 6. The descending position is a position (carrier cooling position) where the first contact surface 4S of the carrier 4 is thermally connected to the second contact surface 521S of the cooling plate 52 described later. In Figure 1 In the example shown, the first contact surface 4S is formed on the surface (lower surface, back surface) of the stage 4 opposite to the substrate placement surface (upper surface).

[0028] In addition, a temperature sensor 43 for detecting the temperature of the stage 4 is provided on the stage 4. The temperature sensor 43 is connected to the heater controller 8 via a slip ring 63 described later. Figure 2 As shown, a plurality of temperature sensors 43 are provided on each stage 4 .

[0029] Furthermore, the stage 4 includes a heat transfer gas supply unit 44 for supplying a heat transfer gas (eg, He gas) to a gap between the back surface of the substrate W and the mounting surface of the stage 4 .

[0030] In addition, a support column 45 for supporting the stage 4 is provided at the center of the surface opposite to the substrate mounting surface of the stage 4. A part of the support column 45 has a heat insulating portion 451 made of a heat insulating member. In addition, the support column 45 serves as a rotation axis when the stage 4 is rotated.

[0031] A refrigeration device 5 is provided below the stage 4 . The refrigeration device 5 includes a refrigerator 51 and a cooling plate 52 .

[0032] The refrigerator 51 is installed outside the processing container 2. From the viewpoint of cooling capacity, the refrigerator 51 is preferably a refrigerator that utilizes a GM (Gifford-McMahon) cycle.

[0033] The cooling plate 52 has a plate portion 521 and a heat conducting portion 522. The cooling plate 52 is formed of a material with high thermal conductivity (e.g., copper (pure copper), aluminum, etc.). Furthermore, the plate portion 521 and the heat conducting portion 522 may be formed integrally or by thermally connecting separately formed components. In addition, the heat capacity of the cooling plate 52 is sufficiently larger than that of the carrier 4.

[0034] The plate portion 521 has a plurality of through holes 521h, and the support posts 45 are inserted through the plurality of through holes 521h. One through hole 521h is formed for each support post 45. In addition, the plate portion 521 has a second contact surface 521S that is thermally connected to the first contact surface 4S of the stage 4. Figure 1 In the example shown, the second contact surface 521S is formed on the upper surface of the plate portion 521. In addition, the second contact surface 521S is formed around the through hole 521h. One end of the heat conducting portion 522 is connected to the plate portion 521. The other end of the heat conducting portion 522 penetrates the bottom wall of the processing container 2 and is thermally connected to the refrigerator 51. It should be noted that the heat insulating member 21 is provided between the bottom wall of the processing container 2 and the heat conducting portion 522.

[0035] With this structure, the refrigerator 51 cools the second contact surface 521S of the cooling plate 52 to an extremely low temperature. In addition, the refrigerator 51 cools the stage 4 disposed in the lowered position through the cooling plate 52.

[0036] In addition, a heater 53 for heating the plate portion 521 is provided on the back side of the plate portion 521 (the surface opposite to the second contact surface 521S). The heater 53 is described below. Figure 2 As shown, a plurality of stages 4 are provided corresponding to each stage 4.

[0037] The stage rotating mechanism 6 includes a motor 61 , a magnetic fluid seal 62 , and a slip ring 63 .

[0038] The motor 61 is disposed below the lifting plate 71 described later, and rotates the support column 45 to rotate the stage 4. The motor 61 is, for example, a direct drive motor (DD motor). It should be noted that the stage rotating mechanism 6 for rotating the support column 45 may be a method other than a direct drive motor, for example, a method of rotating the support column 45 using a servo motor and a transmission belt.

[0039] The support column 45 passes through the lifting plate 71. A magnetic fluid seal 62 is provided between the support column 45 and the lifting plate 71. The magnetic fluid seal 62 supports the support column 45 in a rotatable manner and seals between the support column 45 and the lifting plate 71, thereby separating the internal space 2S of the processing container 2 from the external space of the processing container 2.

[0040] With such a configuration, the stage rotating mechanism 6 rotates the support column 45 by using the motor 61 to rotate the stage 4 .

[0041] The slip ring 63 transmits an electric signal from the temperature sensor 43 provided on the stage 4 via a signal line provided on the support pin 45. In addition, the slip ring 63 transmits electric power to the chuck electrode 41 provided on the stage 4 via a power line provided on the support pin 45. In other words, the support pin 45 has wiring including a signal line and a power line.

[0042] The stage lifting mechanism 7 includes a lifting plate 71, a bellows 72, and a lifting drive unit (not shown). The lifting plate 71 supports the support column 45 in a rotatable manner via the magnetic fluid seal 62. The bellows 72 seals the lifting plate 71 and the processing container 2, and separates the internal space 2S of the processing container 2 from the external space of the processing container 2. The lifting drive unit raises or lowers the lifting plate 71. Thus, the lifting drive unit raises or lowers the stage 4. The lifting drive unit can also be a portable device that uses, for example, a ball screw and a servo motor to raise or lower the stage 4.

[0043] With such a configuration, the stage lifting mechanism 7 places the stage 4 at the raised position by raising the lifting plate 71 by the lifting drive unit, and places the stage 4 at the lowered position by lowering the lifting plate 71 by the lifting drive unit.

[0044] The heater controller 8 controls the heater 53 ( 531 to 534 ) based on the temperature detected by the temperature sensor 43 .

[0045] The control unit 9 is, for example, a computer, and includes a CPU (Central Processing Unit), a RAM (Random Access Memory), a ROM (Read Only Memory), an auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or the auxiliary storage device to control the operation of the substrate processing device 1. The control unit 9 may be provided inside or outside the substrate processing device 1. When the control unit 9 is provided outside the substrate processing device 1, the control unit 9 may control the substrate processing device 1 through a communication method such as a wired or wireless communication method.

[0046] With this structure, the stage structure disposes the stage 4 in the descending position through the stage lifting mechanism 7, so that the first contact surface 4S of the stage 4 is thermally connected to the second contact surface 521S of the cooling plate 52, thereby cooling the stage 4. In addition, the stage structure disposes the stage 4 in the ascending position through the stage lifting mechanism 7, so that the first contact surface 4S of the stage 4 is separated from the second contact surface 521S of the cooling plate 52. In addition, the stage structure rotates the stage 4 through the stage rotating mechanism 6 when the stage 4 is disposed in the ascending position.

[0047] In addition, the stage structure can suppress the increase in the diameter of the support column 45. In other words, it is possible to suppress the increase in the diameter of the direct drive motor 61, the magnetic fluid seal 62, and the slip ring 63. In addition, without using a lifting mechanism for lifting the refrigeration device 5 (refrigerator 51, cooling plate 52), the cooling position (lowered position) of the stage 4 and the rotation position (raised position) of the stage 4 can be switched.

[0048] Next, use Figures 2 to 5 An example of temperature control by the heater controller 8 will be described.

[0049] Figure 2 2 is a block diagram illustrating the heater controller 8 that controls the heater 53 .

[0050] The temperature sensor 43 has a first inside temperature sensor 431 and a first outside temperature sensor 432 provided on the first stage 4A, and a second inside temperature sensor 433 and a second outside temperature sensor 434 provided on the second stage 4B. The first inside temperature sensor 431 measures the temperature of the first stage 4A in a region close to the rotation center side of the first stage 4A. The first outside temperature sensor 432 measures the temperature of the first stage 4A in a region away from the rotation center side of the first stage 4A. The second inside temperature sensor 433 measures the temperature of the second stage 4B in a region close to the rotation center side of the second stage 4B. The second outside temperature sensor 434 measures the temperature of the second stage 4B in a region away from the rotation center side of the second stage 4B.

[0051] Furthermore, the heater 53 includes a first inner heater 531 and a first outer heater 532 corresponding to the first stage 4A, and a second inner heater 533 and a second outer heater 534 corresponding to the second stage 4B.

[0052] A first inner heater 531 is provided in an annular region that is concentric with the through hole 521h through which the support column 45 of the first stage 4A is inserted. In addition, a first outer heater 532 is provided in an annular region that is concentric with the through hole 521h through which the support column 45 of the first stage 4A is inserted and is located outside the region where the first inner heater 531 is provided. A second inner heater 533 is provided in an annular region that is concentric with the through hole 521h through which the support column 45 of the second stage 4B is inserted. In addition, a second outer heater 534 is provided in an annular region that is concentric with the through hole 521h through which the support column 45 of the second stage 4B is inserted and is located outside the region where the second inner heater 533 is provided.

[0053] Figure 32 is a graph showing an example of temperature control. The horizontal axis represents time, and the vertical axis represents the temperature of the stage 4. Here, the stage 4 is lowered by the stage lifting mechanism 7, and the first contact surface 4S is in thermal contact with the second contact surface 521S.

[0054] exist Figure 3 In (a) of FIG. 5 , CH1 indicated by a dotted line is a temperature detected by the first inside temperature sensor 431 , and CH2 indicated by a solid line is a temperature detected by the second inside temperature sensor 433 .

[0055] Here, there is a temperature difference ΔT between the temperature of the stage 4B shown by CH2 and the temperature of the stage 4A shown by CH1. In this case, the heater controller 8 increases the power supply amount of the heater on the lower temperature side. Here, the power supply amount of the second inner heater 533 is increased. In other words, the power supply amount of the second inner heater 533 is made larger than the power supply amount of the first inner heater 531. Thus, the temperature is adjusted until the temperature of the stage 4B shown by CH2 becomes the same temperature as the temperature of the stage 4A shown by CH1.

[0056] It should be noted that the example of adjusting the temperature difference of the inner area detected by the first inner temperature sensor 431 and the second inner temperature sensor 433 is described, but it is not limited to this. The same is true for adjusting the temperature difference of the outer area detected by the first outer temperature sensor 432 and the second outer temperature sensor 434. In this way, the power supplied to the first heater (531, 532) or the second heater (533, 534) corresponding to the temperature sensor with the lower temperature in the temperature sensor (431, 432) of the stage 4A on one side and the temperature sensor (433, 434) of the stage 4B on the other side is increased. In this way, the temperature difference between the stages 4 can be reduced.

[0057] exist Figure 3 In (b), CH1in indicated by a dotted line is the temperature detected by the first inside temperature sensor 431 , and CH1out indicated by a dotted line is the temperature detected by the first outside temperature sensor 432 .

[0058] Here, there is a temperature difference Δt1 between the outside temperature of the carrier 4A shown by CH1out and the inside temperature of the carrier 4A shown by CH1in. In this case, the heater controller 8 increases the power supply to the heater on the lower temperature side. Here, the power supply to the first outside heater 532 is increased. In other words, the power supply to the first outside heater 532 is made greater than the power supply to the first inside heater 531. Thus, the temperature is adjusted until the outside temperature of the carrier 4A shown by CH1out becomes the same temperature as the inside temperature of the carrier 4A shown by CH1in.

[0059] It should be noted that the example of adjusting the temperature difference between the inner circumference and the outer circumference of the first stage 4A is described, but the present invention is not limited to this. The same is true for adjusting the temperature difference between the inner circumference and the outer circumference of the second stage 4B. In this way, the temperature difference within one stage 4 can be reduced.

[0060] Next, use Figure 4 and Figure 5 A description will be given of a change in temperature of the cooling plate 52 when substrate processing is continuously performed on a plurality of substrates W. FIG.

[0061] Figure 4 2 is a graph showing an example of temperature change of the stage 4 in the reference example. The horizontal axis represents the number of processed substrates W. The vertical axis represents the temperature of the stage 4.

[0062] Here, an example of the temperature change of the stage 4 when the temperature adjustment of the heater 53 is not performed is shown. The temperature of the stage 4 changes as shown in FIG. Figure 4 Therefore, in order to process substrates at a stable temperature, first, a predetermined number of processes are performed using dummy substrates, and after the temperature of the stage 4 becomes stable (equilibrium state), the substrate W to be a product is processed (product processing).

[0063] Figure 5 2 is a graph showing an example of temperature change of the stage 4 in the present embodiment. The horizontal axis represents the number of processed substrates W. The vertical axis represents the temperature of the stage 4.

[0064] Here, when starting the substrate processing of the first substrate W, a predetermined power is supplied to the heater 53 in advance. When heat is input from the temperature of the substrate W being transported or the plasma during the substrate processing, the heater controller 8 controls the heater 53 to reduce the power supplied based on the temperature detected by the temperature sensor 43.

[0065] An example of temperature control when substrate processing is performed on a plurality of substrates W will be described below.

[0066] First, the first substrate W is placed on the stage 4 . Next, the stage 4 with the first substrate W placed thereon is disposed at a lowered position so that the first contact surface 4S and the second contact surface 521S are thermally connected to cool the stage 4 and the first substrate W. Here, the first power is supplied to the heater 53 .

[0067] Next, the stage 4 carrying the first substrate W is placed in the raised position so that the first contact surface 4S and the second contact surface 521S are separated. Then, substrate processing (film forming processing) is performed on the first substrate W. The substrate W subjected to the film forming processing is unloaded from the processing container 2 .

[0068] Next, the second substrate W is placed on the stage 4. Next, the stage 4 on which the second substrate W is placed is arranged in a lowered position, and the first contact surface 4S and the second contact surface 521S are thermally connected to cool the stage 4 and the second substrate W. At this time, the temperature of the stage 4 rises due to the heat input when the substrate processing is performed on the first substrate W. Here, the heater 53 is supplied with a second power that is smaller than the first power. Thus, the cooling performance of the refrigeration device 5 on the stage 4 is improved.

[0069] Next, the stage 4 carrying the second substrate W is placed in a raised position so that the first contact surface 4S and the second contact surface 521S are separated. Then, substrate processing (film forming processing) is performed on the second substrate W. The substrate W subjected to the film forming processing is carried out of the processing container 2. Hereinafter, this processing is repeated until the temperature of the stage 4 is stabilized.

[0070] Thus, starting from the substrate processing of the first substrate W, the temperature of the stage 4 is stabilized, and substrate processing can be continuously performed on a plurality of substrates W. Figure 4 Compared with the reference example shown, it is not necessary to perform a process for stabilizing the temperature of the stage 4 using a dummy substrate.

[0071] Next, use Figure 6 and Figure 7 An example of the operation of the substrate processing apparatus 1 will be described. Figure 6 This is an example of a schematic cross-sectional view showing the state of the stage 4 in each step. Figure 7 It is a timing chart showing an example of the operation of the substrate processing apparatus 1 .

[0072] In the standby process, the control unit 9 stops the rotation of the stage 4 by the stage rotation mechanism 6 (Stage stop), and arranges the stage 4 in the lowered position (Stage down) by the stage lifting mechanism 7. As a result, the first contact surface 4S and the second contact surface 521S are in thermal contact, and the stage 4 is cooled. The state of the stage 4 in this process is as follows: Figure 6 As shown in (a).

[0073] In the substrate loading process, the control unit 9 continues from the above process, stops the rotation of the stage 4 by the stage rotating mechanism 6 (Stage stop), and places the stage 4 in the lowered position (Stage down) by the stage lifting mechanism 7. Next, the substrate W is transported into the processing container 2 by the transport device (not shown). Then, the control unit 9 moves the lifting pins 46 to the raised position (Pins up). Thus, the substrate W is supported by the lifting pins 46. Thereafter, the transport device retreats from the processing container 2. The state of the stage 4 in this process is as shown in FIG. Figure 6 as shown in (b).

[0074] In the substrate placement process, the control unit 9 continues from the above process, stops the rotation of the stage 4 by the stage rotation mechanism 6 (Stage stop), and places the stage 4 in the lowered position (Stage down) by the stage lifting mechanism 7. Then, the control unit 9 moves the lifting pins 46 to the lowered position (Pins down). Thus, the substrate W is placed on the stage 4. In addition, the first contact surface 4S is in thermal contact with the second contact surface 521S, and the stage 4 and the substrate W are cooled. The state of the stage 4 in this process is as follows: Figure 6 as shown in (c).

[0075] In the film forming process, the control unit 9 is arranged in the raised position (Stage up) by the stage lifting mechanism 7, and rotates the stage 4 (Stage rotation) by the stage rotating mechanism 6. In addition, the control unit 9 controls the sputtering particle discharge unit 3 to discharge the sputtering particles. Here, the heat capacity of the stage 4 is larger than the heat capacity of the substrate W, and the temperature rise of the substrate W can be suppressed to implement the substrate processing. The state of the stage 4 in this process is as follows: Figure 6 as shown in (d).

[0076] Here, in the film forming process, the heat insulating portion 451 is arranged in the through hole 521h.

[0077] Specifically, when the stage 4 is arranged in the raised position, the upper surface of the heat insulating portion 451 is preferably arranged at a position higher than the upper surface of the cooling plate 52. Thus, even if the temperature of the stage 4 rises due to heat input from the plasma to the stage 4, heat input to the cooling plate 52 via the support pillars 45 can be suppressed.

[0078] Furthermore, when the stage 4 is arranged in the raised position, the lower surface of the heat insulating portion 451 is preferably arranged at a position lower than the lower surface of the cooling plate 52. Thus, during the film forming process, the heat from the outside of the processing container 2 can be suppressed from being input into the cooling plate 52 through the lifting plate 71 and the support column 45.

[0079] In the unloading process, the control unit 9 stops the rotation of the stage 4 by the stage rotating mechanism 6 (Stage stop), and places the stage 4 in the lowered position (Stage down) by the stage lifting mechanism 7. Then, the control unit 9 moves the lifting pins 46 to the raised position (Pins up). As a result, the substrate W is supported by the lifting pins 46. The state of the stage 4 in this state is the same as that in Figure 6 The state shown in (b) is the same as that shown in FIG. 1 . After that, the transport device receives the substrate W supported by the lifting pins 46 and carries it out of the processing container 2. Then, the control unit 9 moves the lifting pins 46 to the lowered position (Pins down). The state of the stage 4 in this state is the same as that shown in FIG. Figure 6 The same state as shown in (a).

[0080] Next, use Figures 8 to 10 The configuration in the stage structure will be described.

[0081] Figure 8 and Fig. 9 : is a schematic diagram showing an example of a stage structure. Here, a refrigerator 51, a cooling plate 52 and a stage 4 are selected for illustration. Figure 8 and Fig. 9 This is a plan view of the stage structure viewed from below.

[0082] like Figure 8 As shown, a structure may also be provided with two carriers 4A and 4B for one refrigerator 51. In addition, in a plan view, the refrigerator 51 is arranged at the center position of a straight line connecting the centers of a plurality of through holes 521h. In addition, the horizontal distance from the center of each carrier 4A and 4B to the center of the refrigerator 51 is arranged so as to be the same distance. Thus, the temperature difference between the carriers 4A and 4B can be suppressed.

[0083] In addition, if Fig. 9 As shown, a structure may be provided with four stages 4A to 4D for one refrigerator 51. In addition, in a plan view, the refrigerator 51 is arranged at the center position of a straight line connecting the centers of the plurality of through holes 521h. And the horizontal distance from the center of each stage 4A to 4D to the center of the refrigerator 51 is arranged so that all are the same distance. Thus, the temperature difference between the stages 4A to 4D can be suppressed.

[0084] Fig.10 is an enlarged view showing an example of the shape of the through hole 521h. Fig. 9 The description will be made by taking the through hole 521h of the carrier 4D indicated by the dotted line as an example.

[0085] In the plan view, the direction from the center of the refrigerator 51 toward the center of the support column 45 is set as the X direction, and the direction orthogonal to the X direction is set as the Y direction. The gap between the through hole 521h and the support column 45 in the X direction is formed to be larger than the gap between the through hole 521h and the support column 45 in the Y direction. That is, the through hole 521h is a long hole with the direction from the center of the through hole 521h toward the center of the refrigerator 51 as the length direction. As a result, when the cooling plate 52 is thermally expanded or thermally contracted, the wall surface of the through hole 521h can be prevented from interfering with the support column 45.

[0086] As mentioned above, the substrate processing apparatus 1 has been described, but the present invention is not limited to the above-mentioned embodiment and the like, and various modifications and improvements can be made within the scope of the gist of the present invention described in the claims.

Claims

1. A carrier structure, comprising: A plurality of stages for mounting substrates; A cooling plate shared by a plurality of the carriers; A refrigerator for cooling the cooling plate; as well as The lifting device can thermally connect or separate the first contact surfaces of the plurality of carriers from the second contact surface of the cooling plate.

2. The stage structure according to claim 1, wherein: comprising a plurality of supporting columns for respectively supporting the plurality of platforms, The cooling plate has a plurality of through holes through which the plurality of support columns are respectively inserted.

3. The stage structure according to claim 2, wherein: In a plan view, the refrigerator is arranged at a center position of a straight line connecting the centers of the plurality of through holes.

4. The stage structure according to claim 1, wherein: The horizontal distances from the center of each of the stages to the center of the refrigerator are the same distance.

5. The stage structure according to claim 2, wherein: The through hole is a long hole whose length direction is a direction from the center of the through hole toward the center of the refrigerator.

6. The stage structure according to claim 2, wherein: The support column has a heat insulating portion formed of a heat insulating member.

7. The stage structure according to claim 6, wherein: When the stage is arranged at the raised position, the upper surface of the heat insulating portion is arranged at a position higher than the upper surface of the cooling plate.

8. The stage structure according to claim 6, wherein: When the stage is arranged at the raised position, the lower surface of the heat insulating portion is arranged at a position lower than the lower surface of the cooling plate.

9. The stage structure according to claim 1, wherein: A heater is provided to heat the cooling plate.

10. The stage structure according to claim 9, wherein: The heater includes an inner heater and an outer heater for each of the stages.

11. The stage structure according to claim 10, wherein: The carrier has: an inner temperature sensor for detecting the temperature of the inner area of ​​the carrier; and The outside temperature sensor is used to detect the temperature of the outside area of ​​the carrier.

12. A substrate processing device, comprising: A stage structure according to any one of claims 1 to 11.

13. A temperature control method, which is a temperature control method for a stage structure, the stage structure comprising: The first stage and the second stage are used to place the substrate; a cooling plate shared by the first carrier and the second carrier; A refrigerator for cooling the cooling plate; A lifting device capable of thermally connecting or separating the first contact surfaces of the plurality of carriers from the second contact surface of the cooling plate; a first temperature sensor for detecting the temperature of the first stage; a second temperature sensor for detecting the temperature of the second stage; a first heater for heating the contact surface with the first stage; a second heater for heating the contact surface with the second stage, In the temperature control method, power supplied to the first heater or the second heater corresponding to the temperature sensor having a lower temperature among the first temperature sensor and the second temperature sensor is increased.

14. A temperature control method, which is a temperature control method for a stage structure, the stage structure comprising: A stage, used for mounting a substrate; Cooling plate; A refrigerator for cooling the cooling plate; a lifting device capable of thermally connecting or separating the first contact surfaces of the plurality of carriers from the second contact surfaces of the cooling plate; and a heater for heating the cooling plate, The temperature control method comprises the following steps: supplying a first power to the heater so that the first contact surface is thermally connected to the second contact surface to cool the stage; separating the first contact surface from the second contact surface; and A second power smaller than the first power is supplied to the heater, so that the first contact surface and the second contact surface are thermally connected to cool the stage.

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