Film forming apparatus, control method, and method for manufacturing electronic device

Abstract

The invention provides a film forming apparatus capable of efficiently performing multilayer film formation, a control method, and a method for manufacturing an electronic device. The film forming apparatus includes: a vapor deposition member including a plurality of vapor deposition sources arranged in a predetermined direction and discharging a vapor deposition material to a substrate; and a plurality of baffles that open and close the plurality of vapor deposition sources with respect to the substrate. A moving member configured to move the substrate and the vapor deposition member relative to each other in the predetermined direction during film formation; and a control means for controlling the opening and closing of the plurality of baffle plates, the plurality of vapor deposition sources including a plurality of vapor deposition sources that emit vapor deposition materials of different types, and the control means for controlling the opening and closing of each baffle plate during film formation in accordance with the types of vapor deposition materials stacked on the substrate and the stacking order thereof.

Description

Technical Field

[0001] The present invention relates to a film forming technology for a substrate, and in particular to a film forming device, a control method and a method for manufacturing an electronic device. Background Art

[0002] In the manufacture of organic EL displays, etc., a film is formed on a substrate by depositing a vapor deposition material emitted from an evaporation source onto the substrate. Patent Document 1 discloses a technique for forming a film on a substrate by relatively moving a substrate and a plurality of evaporation sources.

[0003] Prior Art Literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2017-014616 Summary of the invention

[0006] Problems to be solved by the invention

[0007] When forming a multilayer film on a substrate, the operation is required to be efficient. When the film forming chamber is formed in units of films, the substrate needs to be transported to each film forming chamber in sequence, which takes time. In addition, in a structure in which the substrate and the evaporation source are repeatedly moved relative to each other in units of films, it still takes time because the number of movements increases according to the number of layers of the film. There are also cases where the types of films to be stacked and the stacking order are different, and it is preferable to be able to cope with multiple film formations.

[0008] The present invention provides a technology capable of efficiently performing multi-layer film formation.

[0009] Solutions to Solve Problems

[0010] According to the present invention, there is provided a film forming device, characterized in that:

[0011] The film forming device comprises:

[0012] The vapor deposition component comprises: a plurality of vapor deposition sources arranged in a predetermined direction to release vapor deposition materials toward the substrate; and a plurality of baffles to open and close the plurality of vapor deposition sources relative to the substrate;

[0013] a moving member that moves the substrate and the evaporation member relatively in the prescribed direction during film formation; and

[0014] A control component controls the opening and closing of the plurality of baffles,

[0015] The plurality of vapor deposition sources include a plurality of vapor deposition sources that emit vapor deposition materials of different types.

[0016] The control unit controls the opening and closing of each shutter during film formation according to the type of the vapor deposition material stacked on the substrate and the stacking order thereof.

[0017] In addition, according to the present invention, a control method is provided, which is a control method for a film forming device, wherein the film forming device comprises: a vapor deposition component having: a plurality of vapor deposition sources arranged in a predetermined direction and emitting vapor deposition materials toward a substrate; and a plurality of baffles, opening and closing the plurality of vapor deposition sources relative to the substrate; and a moving component, which moves the substrate and the vapor deposition component relative to each other in the predetermined direction during film formation, characterized in that:

[0018] The plurality of vapor deposition sources include a plurality of vapor deposition sources that emit vapor deposition materials of different types.

[0019] The control method includes a step of controlling the opening and closing of each shutter during film formation according to the type of vapor deposition material layered on the substrate and the layering order thereof.

[0020] In addition, according to the present invention, there is provided a method for manufacturing an electronic device, characterized in that:

[0021] The method for manufacturing an electronic device includes a film forming step of forming a film on a substrate by the film forming apparatus.

[0022] Effects of the Invention

[0023] According to the present invention, it is possible to provide a technology for efficiently performing multi-layer film formation. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a top view schematically showing the structure of the film forming system.

[0025] Figure 2 It is a plan view schematically showing the structure of a film forming apparatus according to one embodiment of the present invention.

[0026] Figure 3 yes Figure 2 Front view of the film forming device.

[0027] Figure 4 It is a diagram for explaining the structure of the evaporation unit.

[0028] Figure 5 It is a diagram showing an example of the release state of the vapor deposition material due to the opening and closing of the shutter.

[0029] Figure 6 It is a diagram showing an example of movement of the vapor deposition unit during film formation.

[0030] Figure 7 It is a diagram showing an example of movement of the vapor deposition unit during film formation.

[0031] Figure 8 (A) is a diagram showing an example of a target stacking structure, Figure 8 (B) is a diagram showing an example of control of the damper. Figure 8 (C) Yes Figure 8 (B) Enlarged view of the P1 part.

[0032] Fig. 9 (A) is a diagram showing an example of control of a damper. Fig. 9 (B) Yes Fig. 9 (A) Enlarged view of the P2 part.

[0033] Fig.10 (A) is a diagram showing an example of a target stacking structure, Fig.10 (B) is a diagram showing an example of control of the damper. Fig.10 (C) Yes Fig.10 (B) Enlarged view of P3 part.

[0034] Fig.11 (A) is a diagram showing an example of control of a damper. Fig.11 (B) Yes Fig.11 (A) Enlarged view of P4 part.

[0035] Fig.12 (A) is a diagram showing an example of a target stacking structure, Fig.12 (B) is a diagram showing an example of control of the damper. Fig.12 (C) Yes Fig.12 (B) Enlarged view of P5 part.

[0036] Fig.13 (A) is a diagram showing an example of control of a damper. Fig.13 (B) Yes Fig.13 (A) Enlarged view of P6 part.

[0037] Fig.14 It is a diagram showing another example of movement of the vapor deposition unit during film formation.

[0038] Fig.15 It is a diagram showing another example of movement of the vapor deposition unit during film formation.

[0039] Fig.16 It is a plan view schematically showing the structure of a film forming apparatus according to another embodiment.

[0040] Fig.17 yes Fig.16 Front view of the film forming device.

[0041] Fig.18 It is a diagram showing an example of movement of the vapor deposition unit during film formation.

[0042] Fig.19It is a diagram showing an example of movement of the vapor deposition unit during film formation.

[0043] Fig. 20 (A) is a diagram showing an example of a target stacking structure, Fig. 20 (B) is a diagram showing an example of control of the damper. Fig. 20 (C) Yes Fig. 20 (B) Enlarged view of P11 part.

[0044] Fig.21 (A) is a diagram showing an example of control of a damper. Fig.21 (B) Yes Fig.21 (A) is an enlarged view of the P12 part.

[0045] Fig. 22 (A) is a diagram showing an example of control of a damper. Fig. 22 (B) Yes Fig. 22 (A) is an enlarged view of the P13 part.

[0046] Fig.23 (A) is a diagram showing an example of control of a damper. Fig.23 (B) Yes Fig.23 (A) is an enlarged view of part P14.

[0047] Fig.24 (A) is an overall view of an organic EL display device. Fig.24 (B) is a diagram showing a cross-sectional structure of one pixel. DETAILED DESCRIPTION

[0048] Hereinafter, the embodiments are described in detail with reference to the accompanying drawings. In addition, the following embodiments do not limit the invention involved in the claims. Although multiple features are described in the embodiments, these multiple features are not all necessary for the invention, and multiple features can be combined arbitrarily. Moreover, in the accompanying drawings, the same or similar structures are marked with the same figure numbers, and repeated descriptions are omitted.

[0049] <First Embodiment>

[0050] <Overview of film forming system>

[0051] Figure 1It is a top view schematically showing the structure of the film forming system SY. The film forming system SY is a system that performs film forming processing on a rectangular substrate 100 that is brought in by a film forming device 1 of one embodiment of the present invention, and carries out the processed substrate. For example, by arranging one or more film forming systems SY, a manufacturing line for electronic devices is formed. As an electronic device, for example, a display panel of an organic EL display device for a smartphone can be listed. The film forming system SY includes a film forming device 1, a carrying-in chamber 60, a substrate conveying chamber 62, a carrying-out chamber 64, and a mask storage chamber 66. Two film forming devices 1 are provided.

[0052] The substrate 100 to be film-formed in the film-forming device 1 is carried into the carrying-in chamber 60. A conveying robot 620 for conveying the substrate 100 is provided in the substrate conveying chamber 62. The conveying robot 620 conveys the substrate 100 carried into the carrying-in chamber 60 to the film-forming device 1. In addition, the conveying robot 620 conveys the substrate 100 to the carrying-out chamber 64 after the film-forming process in the film-forming device 1 is completed. The substrate 100 conveyed to the carrying-out chamber 64 by the conveying robot 620 is conveyed out of the carrying-out chamber 64 to the outside of the film-forming system SY. The mask 101 used for film-forming in the film-forming device 1 is stored in the mask storage chamber 66. The mask 101 stored in the mask storage chamber 66 is conveyed to the film-forming device 1 by the conveying robot 620.

[0053] The film forming apparatus 1 and the interior of each chamber constituting the film forming system SY are maintained in a vacuum state by exhaust means such as a vacuum pump. In the present embodiment, "vacuum" means a state filled with a gas having a pressure lower than the atmospheric pressure, in other words, a decompressed state.

[0054] The control system of the film forming system SY includes a host device 200 that controls the entire system as a host computer, a control unit 43 that controls the film forming device 1, and a control unit 201 that controls the substrate transport chamber 62 (transport robot 620, etc.), which can communicate via a wired or wireless communication line. The host device 200 sends information related to the substrate 100 or instructions such as transport timing to each control unit 43, 201, and each control unit 43, 201 controls each structure according to the received instructions.

[0055] The control unit 43 is an electronic circuit that controls the entire film forming device 1. The control unit 43 includes, for example, a processing unit, a storage unit, an input / output interface (I / O), and a communication unit. The processing unit is a processor represented by a CPU, which executes a program stored in the storage unit to control the film forming device 1. The storage unit is a storage device such as a ROM, RAM, HDD, etc., which stores various control information in addition to the programs executed by the processing unit. The input / output interface is an interface for receiving signals between the processing unit and an external device (actuator or sensor such as a motor). The communication unit is a communication device that communicates with a host device 200 or other control unit 201 via a communication line. The control unit 201 is also an electronic circuit with the same structure as the control unit 43.

[0056] <Film forming device>

[0057] Figure 2 It is a plan view schematically showing the structure of the film forming apparatus 1 . Figure 3 yes Figure 2 A front view of the film forming device 1. Figure 2 In the following figures, arrows X and Y indicate horizontal directions orthogonal to each other, and arrow Z indicates the up-down direction (vertical direction).

[0058] The film forming device 1 can be used, for example, to manufacture display devices (including flat panel displays, etc.), thin-film solar cells, organic photoelectric conversion elements (organic thin-film imaging elements), and other electronic devices, optical components, etc. for manufacturing smart phones, and can be particularly used to manufacture organic EL panels. As the material of the substrate 100 to be evaporated in the film forming device 1, glass, resin, metal, etc. can be appropriately selected, and preferably a material having a resin layer such as polyimide formed on glass is used. As the evaporated material, organic materials, inorganic materials (metals, metal oxides, etc.), etc. can be used.

[0059] The film forming apparatus 1 includes a vapor deposition unit 10, moving units 22 and 24, and a plurality of film forming stages 30A and 30B. The vapor deposition unit 10, the moving units 22 and 24, and the film forming stages 30A and 30B are arranged inside a chamber 45 maintained in a vacuum state. In the present embodiment, a plurality of film forming stages 30A and 30B are provided in the upper portion of the chamber 45 separated along the Y direction, and the vapor deposition unit 10 and the moving units 22 and 24 are provided below the chamber 45. In addition, a plurality of substrate carrying-in and carrying-out ports 44A and 44B are provided in the chamber 45 for carrying in and carrying out the substrate 100 along the X direction by the transfer robot 620.

[0060] (Film-forming stage)

[0061] The film forming stages 30A and 30B are stages for supporting the substrate 100 and the mask 101 to be film-formed and adjusting their positions. In the following description, for convenience, the substrate 100 and the mask 101 supported on the film forming stage 30A are marked as substrate 100A and mask 101A, and the substrate 100 and the mask 101 supported on the film forming stage 30B are marked as substrate 100B and mask 101B.

[0062] The film forming stage 30A includes a substrate support portion 32A, a mask support portion 34A, a support column 35A, and an alignment mechanism 36A.

[0063] The substrate support portion 32A supports the substrate 100A carried in by the transfer robot 620. In the present embodiment, the substrate support portion 32A supports the substrate 100A in such a manner that the short side of the substrate 100A extends in the Y direction and the long side of the substrate 100A extends in the X direction. In the present embodiment, the substrate support portion 32A has a claw-shaped placement portion that supports the edge of the substrate 100A from the lower side of the substrate 100A. However, the substrate support portion 32A may support the substrate by clamping the edge of the substrate 100A, or may support the substrate 100A by adsorbing the substrate 100A by an electrostatic chuck or an adhesive chuck.

[0064] The substrate support 32A can be raised and lowered by the lifting mechanism of the alignment mechanism 36A, and can overlap the substrate 100A received from the transfer robot 620 on the mask 101A supported by the mask support 34A. The lifting mechanism can use a well-known technique such as a ball screw mechanism.

[0065] The mask support 34A supports the mask 101A. The mask support 34A is supported by pillars 35A in the chamber 45. The mask 101A and the mask support 34A are provided with cutouts (not shown) to avoid interference with the substrate support 32A when the substrate 100A is superimposed on the mask 101A.

[0066] The alignment mechanism 36A aligns the substrate 100A and the mask 101A. The alignment mechanism 36A aligns the substrate 100A supported by the substrate support 32A and the mask 101A supported by the mask support 32A by adjusting the relative positions of the substrate support 32A and the mask support 34A in the horizontal direction.

[0067] As for the specific structural example of the alignment mechanism 36A, a well-known technology can be used, so the detailed description is omitted. As an example, the alignment mechanism 36A detects the alignment marks formed on the substrate 100A and the mask 101A using a camera not shown. Then, the alignment mechanism 36A adjusts the positional relationship between the substrate 100A and the mask 101A so that the relationship between the position of the substrate 100A calculated from the marks formed on the substrate 100A and the position of the mask 101A calculated from the marks formed on the mask 101A satisfies a predetermined condition.

[0068] When the alignment by the alignment mechanism 36A is completed, the substrate support 32A superimposes the supported substrate 100A on the mask 101A. In a state where the substrate 100A and the mask 101A are superimposed, a film is formed on the substrate 100A by the vapor deposition unit 10 .

[0069] The film forming stage 30B has the same structure as the film forming stage 30A. That is, the film forming stage 30B has a substrate support portion 32B, a mask support portion 34B, a support column 35B, and an alignment mechanism 36B, which have the same structure as the substrate support portion 32A, the mask support portion 34A, the support column 35A, and the alignment mechanism 36A.

[0070] The film forming apparatus 1 of this embodiment is a so-called dual-stage film forming apparatus having a plurality of film forming stages 30A and 30B. For example, while the substrate 100A is being deposited on the film forming stage 30A, the substrate 100B and the mask 101B can be aligned on the film forming stage 30B, and the film forming process can be performed efficiently.

[0071] (Evaporation unit)

[0072] Next, the vapor deposition unit 10 will be described. Figure 4 This is a diagram for explaining the structure of the vapor deposition unit 10, and is a schematic diagram of the vapor deposition unit 10 observed from the horizontal direction (Y direction). The vapor deposition unit 10 releases the vapor deposition material while moving, and forms a film on the substrate 100. The vapor deposition unit 10 includes a plurality of vapor deposition sources (evaporation sources) 11A to 11D divided and accommodated in a housing 14 open at the top. The plurality of vapor deposition sources 11A to 11D are arranged along a predetermined direction (X direction). Each vapor deposition source 11A to 11D includes a storage portion for accommodating the vapor deposition material (evaporation material), a heater for heating the vapor deposition material in the storage portion, and the like.

[0073] Each of the vapor deposition sources 11A to 11D is a linear source having a plurality of discharge ports 11 a arranged in the Y direction, and discharges the vapor deposition material upward from the discharge ports 11 a. The discharge region of the vapor deposition material of each of the vapor deposition sources 11A to 11D covers a range corresponding to the width of the substrate 100 .

[0074] In the case of the present embodiment, the vapor deposition unit 10 has four vapor deposition sources 11A to 11D. However, the number of vapor deposition sources may be more than 5 or less than 3. The four vapor deposition sources 11A to 11D include a plurality of vapor deposition sources that emit different types of vapor deposition materials. The types of vapor deposition substances emitted by the four vapor deposition sources 11A to 11D are marked as substances MA, MB, MC, and MD. In the case of the present embodiment, it is assumed that the vapor deposition unit 10 is used as an evaporation source for organic materials. As an example, in the present embodiment, substances MA to MC are different types of vapor deposition substances, and substance MA and substance MD are the same type of vapor deposition substances. More specifically, substance MA and substance MD are main materials of the same material, and substance MB and substance MC are co-evaporation materials (for example, substance MB: main material, substance MC: dopant material). In addition, the vapor deposition unit 10 can also be used as an evaporation source for inorganic materials.

[0075] The vapor deposition unit 10 includes a passage forming member 13. The passage forming member 13 is a member that forms a passage for the vapor deposition material emitted from each vapor deposition source 11A to 11D to reach the substrate 100, is a limiting member that limits the emission area of ​​the vapor deposition material from each vapor deposition source 11A to 11D relative to the substrate 100, and is an adhesion preventing member that prevents the vapor deposition material from adhering to the wall surface of the chamber 45. In the case of this embodiment, the passage forming member 13 forms three passages 13a to 13c.

[0076] The passage 13a is a passage for the evaporation material emitted from the evaporation source 11A to reach the substrate 100, and is formed so that the evaporation material does not mix with the other evaporation sources 11B to 11D. The passage 13b is a passage for the evaporation material emitted from the evaporation sources 11B and 11C to reach the substrate 100, and is formed so that the evaporation material does not mix with the other evaporation sources 11A and 11D. In the case of the present embodiment, the evaporation sources 11B and 11C share the passage 13b in such a way that the emission areas of the evaporation materials of each overlap, and the evaporation materials (MB, MC) emitted from these evaporation sources are mixed and reach the substrate 100. However, a structure in which separate passages are provided for them can also be adopted. The passage 13c is a passage for the evaporation material emitted from the evaporation source 11D to reach the substrate 100, and is formed so that the evaporation material does not mix with the other evaporation sources 11A to 11C.

[0077] The vapor deposition unit 10 includes a plurality of baffles 12A to 12D. The baffles 12A to 12D open and close the vapor deposition sources 11A to 11D relative to the substrate 100. In the present embodiment, a baffle is provided for each vapor deposition source. The baffle 12A is provided on the vapor deposition source 11A. The baffle 12B is provided on the vapor deposition source 11B. The baffle 12C is provided on the vapor deposition source 11C. The baffle 12D is provided on the vapor deposition source 11D.

[0078] The shutter 12A is opened and closed by a motor 12 a as a driving source. When opened, the shutter 12A allows the vapor deposition material emitted from the vapor deposition source 11A to reach the substrate 100 , and when closed, the shutter 12A restricts the vapor deposition material emitted from the vapor deposition source 11A from reaching the substrate 100 . Figure 4 The shutter 12A is a sliding shutter, and moves in parallel in the D1 direction (X direction).

[0079] The shutter 12B is opened and closed by a motor 12 b as a driving source. When opened, the shutter 12B allows the vapor deposition material emitted from the vapor deposition source 11B to reach the substrate 100 , and when closed, the shutter 12B restricts the vapor deposition material emitted from the vapor deposition source 11B from reaching the substrate 100 . Figure 4 The shutter 12B is a rotating shutter, and rotates in the D2 direction (the circumferential direction of the axis in the Y direction).

[0080] The shutter 12C is opened and closed by a motor 12 c as a driving source. When opened, the shutter 12C allows the vapor deposition material emitted from the vapor deposition source 11C to reach the substrate 100 , and when closed, the shutter 12C restricts the vapor deposition material emitted from the vapor deposition source 11C from reaching the substrate 100 . Figure 4 The shutter 12C is a rotating shutter, and rotates in the D3 direction (the circumferential direction of the axis in the Y direction).

[0081] The shutter 12D is opened and closed by a motor 12d as a driving source. When opened, the shutter 12D allows the vapor deposition material emitted from the vapor deposition source 11D to reach the substrate 100 , and when closed, the shutter 12D restricts the vapor deposition material emitted from the vapor deposition source 11D from reaching the substrate 100 . Figure 4 The shutter 12D is a sliding shutter, and moves in parallel in the D4 direction (X direction).

[0082] In this embodiment, since a baffle is provided for each evaporation source, it is possible to control the evaporation material to reach and cut off the substrate 100 for each evaporation source. However, for example, in this embodiment, since the evaporation materials are mixed and evaporated onto the substrate 100 in the evaporation source 11B and the evaporation source 11C, a common baffle may be provided instead of a separate one.

[0083] In addition, in the present embodiment, baffles with different driving modes are provided, baffles 12A and 12D are sliding type, and baffles 12B and 12C are rotating type. Vapor deposition material is attached to baffles 12A to 12D. During the opening and closing operation, the possibility of the attached vapor deposition material falling off is lower for the sliding baffle than for the rotating baffle. For baffles with a high opening and closing frequency, the sliding baffle is advantageous. For example, in the present embodiment, assuming that the opening and closing frequency of baffles 12A and 12D is high, they are set as sliding baffles.

[0084] However, all of the shutters 12A to 12D may be rotating shutters, or all of the shutters 12A to 12D may be sliding shutters.

[0085] Figure 5 An example of the release method of the evaporation material based on the opening and closing of the shutters 12A to 12D is shown. State ST1 shows a state in which the shutters 12A to 12D are all open. The evaporation materials MA and MD released from the evaporation sources 11A and 11D are evaporated on the substrate 100, and a mixture of the evaporation materials MB and MC released from the evaporation sources 11B and 11C is also evaporated. State ST2 shows a state in which the shutters 12A to 12D are all closed. The evaporation material does not reach the substrate 100.

[0086] State ST3 indicates a state in which the shutters 12B to 12D are opened and the shutter 12A is closed. The evaporation material MD emitted from the evaporation source 11D is evaporated on the substrate 100, and a mixture of the evaporation materials MB and MC emitted from the evaporation sources 11B and 11C is also evaporated. State ST4 indicates a state in which the shutters 12A to 12C are opened and the shutter 12D is closed. The evaporation material MA emitted from the evaporation source 11A is evaporated on the substrate 100, and a mixture of the evaporation materials MB and MC emitted from the evaporation sources 11B and 11C is also evaporated.

[0087] State ST5 indicates a state in which the shutters 12B and 12C are opened and the shutters 12A and 12B are closed. A mixture of the deposition materials MB and MC emitted from the deposition sources 11B and 11C is deposited on the substrate 100. State ST6 indicates a state in which the shutters 12A, 12B, and 12D are opened and the shutter 12C is closed. The deposition materials MA and MD emitted from the deposition sources 11A and 11D are deposited on the substrate 100, and the deposition material MB emitted from the deposition source 11B is also deposited.

[0088] (Mobile Unit)

[0089] Refer again Figure 2 and Figure 3 The film forming apparatus 1 includes a moving unit 22 that moves the vapor deposition unit 10 relative to the substrate 100 in the X direction during film formation. The film forming apparatus 1 also includes a moving unit 24 that moves the vapor deposition unit 10 and the moving unit 22 in the Y direction between the film forming stages 30A and 30B.

[0090] The moving unit 22, as a component provided on the evaporation unit 10, includes a motor 221, a pinion 222 mounted on a shaft member rotated by the motor 221, and a guide member 223. In addition, the moving unit 22 includes a frame member 224, a rack 225 formed on the upper surface of the frame member 224 and meshing with the pinion 222, and a guide rail 226 for the guide member 223 to slide. The rack 225 and the guide rail 226 are extended in the X direction. The guide member 223 is engaged with the guide rail 226 and slides in the X direction on the guide rail 226. In the evaporation unit 10, the pinion 222 rotated by the drive of the motor 221 is engaged with the rack 225, so that it can reciprocate in the X direction along the guide rail 226. The moving range of the evaporation unit 10 covers the entire length of the substrate 100.

[0091] The moving unit 24 includes two supporting members 241A and 241B extending in the Y direction and separated in the X direction. The two supporting members 241A and 241B support the short sides of the frame member 224 of the moving unit 22. The moving unit 24 includes a driving mechanism such as a motor and a rack-and-pinion mechanism (not shown), and by moving the frame member 224 in the Y direction relative to the two supporting members 241A and 241B, the vapor deposition unit 10 and the moving unit 22 reciprocate in the Y direction.

[0092] <Film forming operation>

[0093] An example of control of the film forming apparatus 1 executed by the control unit 43 will be described. Figure 6 and Figure 7 The diagrams show examples of movement of the vapor deposition unit 10 during film formation. In each diagram, arrows X1 and X2 indicate directions opposite to one of the X directions, and arrows Y1 and Y2 indicate directions opposite to one of the Y directions.

[0094] Figure 6 The state ST11 represents a state where the vapor deposition unit 10 is located at the initial position. At the initial position, the vapor deposition unit 10 is arranged to be aligned with the substrate 100A supported by the film forming stage 30A in the X direction in a plan view.

[0095] The film formation on the substrate 100A is started. After the shutters 12A to 12D in the closed state are set to the open and closed states, the vapor deposition unit 10 is moved in the X1 direction as shown in the state ST12 by the moving unit 22. While the vapor deposition unit 10 is moving relative to the substrate 100A, the vapor deposition material is released toward the substrate 100A, so that the vapor deposition material is formed on the substrate 100A.

[0096] Next, after the shutters 12A to 12D are set to open and close, the vapor deposition unit 10 is moved in the X2 direction as shown in state ST13 by the moving unit 22. While the vapor deposition unit 10 moves relative to the substrate 100A, the vapor deposition material is released toward the substrate 100A, thereby forming a film of the vapor deposition material on the substrate 100A. After the movement, the shutters 12A to 12D are all in the closed state.

[0097] As described above, in the present embodiment, by reciprocating the vapor deposition unit 10 in the X direction with respect to the substrate 100A, it is possible to form a film twice on the substrate 100A.

[0098] Next, the film forming operation is switched to the substrate 100B supported by the film forming stage 30B. As shown in state ST14, the vapor deposition unit 10 and the moving unit 22 are moved in the Y1 direction by the moving unit 24. The vapor deposition unit 10 is moved to a position aligned with the substrate 100B supported by the film forming stage 30B in the X direction in a plan view.

[0099] The film formation on the substrate 100B starts. After the shutters 12A to 12D in the closed state are set to the open and closed states, the vapor deposition unit 10 is moved in the X1 direction as shown in the state ST15 by the moving unit 22. While the vapor deposition unit 10 moves relative to the substrate 100B, the vapor deposition material is released to the substrate 100B, so that the vapor deposition material is formed on the substrate 100B. In addition, the operation of replacing the substrate 100A on which the film formation has been completed with the second substrate 100A can be performed in parallel on the film formation stage 30A.

[0100] Next, after the shutters 12A to 12D are set to open and close, the vapor deposition unit 10 is moved in the X2 direction as shown in state ST16 by the moving unit 22. While the vapor deposition unit 10 moves relative to the substrate 100B, the vapor deposition material is released toward the substrate 100B, thereby forming a film of the vapor deposition material on the substrate 100B. After the movement, the shutters 12A to 12D are all in the closed state.

[0101] As described above, in the present embodiment, by reciprocating the vapor deposition unit 10 in the X direction with respect to the substrate 100B, it is possible to perform film formation twice on the substrate 100B.

[0102] Next, the operation is shifted to the film forming operation of the substrate 100A supported by the film forming stage 30A. As shown in state ST17, the vapor deposition unit 10 and the moving unit 22 are moved in the Y2 direction by the moving unit 24. The vapor deposition unit 10 returns to the initial position.

[0103] The film formation on the second substrate 100A is started. After the shutters 12A to 12D in the closed state are set to the open and closed states, the vapor deposition unit 10 is moved in the X1 direction as shown in the state ST18 by the moving unit 22. While the vapor deposition unit 10 is moving relative to the substrate 100A, the vapor deposition material is released to the substrate 100A, so that the vapor deposition material is formed on the substrate 100A. In addition, the operation of replacing the substrate 100B on which the film formation has been completed with the second substrate 100B can be performed in parallel on the film formation stage 30B.

[0104] State ST18 is the same state as state ST12. Thereafter, the film substrate 100 is alternately formed on the film forming stage 30A and the film forming stage 30B in the same order.

[0105] (Baffle opening and closing control and film forming example)

[0106] The following describes an example of the opening and closing control of the shutters 12A to 12D and the film formation on the substrate 100. The control unit 43 controls the opening and closing of the shutters 12A to 12D during film formation according to the type of the vapor deposition material stacked on the substrate 100 and the stacking order. Figure 6 and Figure 7 As shown in the example, when the deposition unit 10 is reciprocated in the X direction relative to the substrate 100 to form a film twice on the substrate 100, the opening and closing of each baffle 12A to 12D during film formation is controlled based on the moving direction of the deposition unit 10 (X1 direction or X2 direction).

[0107] Reference Figure 8 (A)~ Fig. 9 (B) A control example is described. Figure 8 (A) illustrates a target stacking structure of film formation control on the substrate 100. Information on the target stacking structure is provided from, for example, the host device 200 to the control unit 43, and the control unit 43 performs opening and closing control of the shutters 12A to 12D based on the information. Figure 8 The stacking order of the target stacking structure of (A) is, from the substrate 100 side, a film of the evaporated material MA, a mixed film of the evaporated materials MB and MC, a film of the evaporated material MA, a film of the evaporated material MA, a mixed film of the evaporated materials MB and MC, and a film of the evaporated material MA.

[0108] In Figure 6 The film forming operation on the substrate 100A described in the states ST11 to ST13 is taken as an example. Figure 8 (A) Film formation situation. Figure 8The target laminated structure of (A) is a 5-layer structure (a portion with two consecutive layers of the vapor-deposited material MA) if classified by film-forming material, and a 6-layer structure if classified by the number of film-forming times. Here, a 3-layer portion is formed in the first film-forming in state ST12, and a 3-layer portion is formed in the second film-forming in state ST13.

[0109] In the initial position of state ST11, the control unit 43 sets the opening and closing of the baffles 12A to 12D. In the first film formation, the moving direction of the evaporation unit 10 is the X1 direction. Therefore, the leading side in the relative moving direction (X1 direction) relative to the substrate 100A is the evaporation source 11A side. In the first film formation of state ST12, it is sufficient as long as a film of the evaporation substance MA, a mixed film of the evaporation substances MB and MC, and a film of the evaporation substance MA can be formed in sequence from the substrate 100A side. Therefore, for the substrate 100A, the evaporation substance MA emitted from the evaporation source 11A, the evaporation substances MB and MC emitted from the evaporation sources 11B and 11C, and the evaporation substance MD (in this embodiment, the evaporation substance MA) emitted from the evaporation source 11D are attached to the substrate 100A in this order. Therefore, all the baffles 12A to 12D are set to the open state.

[0110] Figure 8 (B) shows the state of the first film formation in the middle of the state ST12, Figure 8 (C) Yes Figure 8 (B) is an enlarged view of the P1 portion. The baffles 12A to 12D are all set to the open state, and the vapor deposition unit 10 moves in the X1 direction. Since the vapor deposition source 11A is located at the front of the moving direction, a film of the vapor deposition material MA is first formed on the substrate 100A, and a mixed film of the vapor deposition materials MB and MC from the vapor deposition sources 11B and 11C is formed thereon. Furthermore, a film of the vapor deposition material MD (MA) is formed thereon from the vapor deposition source 11D located at the rear in the moving direction. In this way, the initial three-layer film is formed on the substrate 100A.

[0111] Next, the state ST13 is transferred to the second film formation. In the second film formation, the moving direction of the vapor deposition unit 10 is the X2 direction. Therefore, the leading side in the relative moving direction (X2 direction) relative to the substrate 100A is the vapor deposition source 11D side. In the second film formation, it is sufficient as long as a film of the vapor deposition material MA, a mixed film of the vapor deposition materials MB and MC, and a film of the vapor deposition material MA can be formed in sequence from the substrate 100A side. Therefore, for the substrate 100A, the vapor deposition material MD (MA) emitted from the vapor deposition source 11D, the vapor deposition materials MB and MC emitted from the vapor deposition sources 11B and 11C, and the vapor deposition material MA emitted from the vapor deposition source 11A are attached to the substrate 100A in this order. Therefore, all the baffles 12A to 12D are set to the open state.

[0112] Fig. 9 (A) shows the state in the middle of the second film formation in state ST13, Fig. 9 (B) Yes Fig. 9 (A) is an enlarged view of the P2 portion. The baffles 12A to 12D are all set to the open state, and the vapor deposition unit 10 moves in the X2 direction. Since the vapor deposition source 11D is located at the front of the moving direction, a film of the vapor deposition material MD (MA) is first formed on the substrate 100A, and a mixed film of the vapor deposition materials MB and MC from the vapor deposition sources 11B and 11C is formed thereon. Furthermore, a film of the vapor deposition material MA is formed from the vapor deposition source 11A located at the rear in the moving direction. In this way, the remaining three layers of film are formed on the substrate 100A. As described above, the film formation of the substrate 100A is completed.

[0113] Reference Fig.10 (A)~ Fig.11 (B) Another control example is described. Fig.10 (A) illustrates a target stacking structure for controlling film formation on a substrate 100, wherein the stacking order is, starting from the substrate 100 side, a film of a vapor-deposited substance MA, a mixed film of vapor-deposited substances MB and MC, a film of vapor-deposited substance MA, and a mixed film of vapor-deposited substances MB and MC.

[0114] In Figure 6 The film forming operation on the substrate 100A described in the states ST11 to ST13 is taken as an example. Fig.10 (A) Film formation situation. Fig.10 The target stacked structure of (A) is a four-layer structure. Therefore, a two-layer portion is formed in the first film formation in state ST12, and a two-layer portion is formed in the second film formation in state ST13.

[0115] In the initial position of state ST11, the control unit 43 sets the opening and closing of the baffles 12A to 12D. In the first film formation, the moving direction of the evaporation unit 10 is the X1 direction. Therefore, the leading side in the relative moving direction (X1 direction) relative to the substrate 100A is the evaporation source 11A side. In the first film formation of state ST12, it is sufficient as long as a film of the evaporation substance MA and a mixed film of the evaporation substances MB and MC can be formed in sequence from the substrate 100A side. Therefore, for the substrate 100A, the evaporation substance MA emitted from the evaporation source 11A, and the evaporation substances MB and MC emitted from the evaporation sources 11B and 11C are attached to the substrate 100A in this order. Therefore, the baffles 12A to 12C are set to the open state, and the baffle 12D is set to the closed state.

[0116] Fig.10 (B) shows the state of the first film formation in the middle of the state ST12, Fig.10 (C) Yes Fig.10 (B) is an enlarged view of the P3 portion. The baffles 12A to 12C are set to the open state, the baffle 12D is set to the closed state, and the vapor deposition unit 10 moves in the X1 direction. Since the vapor deposition source 11A is located at the front of the moving direction, the film of the vapor deposition material MA is first formed on the substrate 100A, and a mixed film of the vapor deposition materials MB and MC from the vapor deposition sources 11B and 11C is formed thereon. In this way, the first two layers of the film are formed on the substrate 100A.

[0117] Next, the state ST13 is transferred to the second film formation. In the second film formation, the moving direction of the vapor deposition unit 10 is the X2 direction. Therefore, the leading side in the relative moving direction (X2 direction) relative to the substrate 100A is the vapor deposition source 11D side. In the second film formation, it is sufficient as long as a film of the vapor deposition material MA and a mixed film of the vapor deposition materials MB and MC can be formed in sequence from the substrate 100A side. Therefore, for the substrate 100A, the vapor deposition material MD (MA) emitted from the vapor deposition source 11D, and the vapor deposition materials MB and MC emitted from the vapor deposition sources 11B and 11C are attached to the substrate 100A in this order. Therefore, the baffles 12B to 12D are set to the open state, and the baffle 12A is set to the closed state.

[0118] Fig.11 (A) shows the state in the middle of the second film formation in state ST13, Fig.11 (B) Yes Fig.11 (A) is an enlarged view of the P4 portion. The baffles 12B to 12D are set to the open state, the baffle 12A is set to the closed state, and the evaporation unit 10 moves in the X2 direction. Since the evaporation source 11D is located at the front of the moving direction, the film of the evaporation material MD (MA) is first formed on the substrate 100A, and a mixed film of the evaporation materials MB and MC from the evaporation sources 11B and 11C is formed thereon. In this way, the remaining 2 layers of the film are formed on the substrate 100A. As described above, the film formation of the substrate 100A is completed.

[0119] Reference Fig.12 (A)~ Fig.13 (B) Another control example is further described. Fig.12 (A) illustrates a target layered structure for film formation control on the substrate 100 , where the layered order is, from the substrate 100 side, a film of the vapor-deposited substance MA, a mixed film of the vapor-deposited substances MB and MC, and a mixed film of the vapor-deposited substances MB and MC.

[0120] In Figure 6 The film forming operation on the substrate 100A described in the states ST11 to ST13 is taken as an example. Fig.12 (A) Film formation situation. Fig.12The target laminated structure of (A) is a three-layer structure. Therefore, a two-layer portion is formed in the first film formation in state ST12, and a one-layer portion is formed in the second film formation in state ST13.

[0121] In the initial position of state ST11, the control unit 43 sets the opening and closing of the baffles 12A to 12D. In the first film formation, the moving direction of the evaporation unit 10 is the X1 direction. Therefore, the leading side in the relative moving direction (X1 direction) relative to the substrate 100A is the evaporation source 11A side. In the first film formation of state ST12, it is sufficient as long as a film of the evaporation substance MA and a mixed film of the evaporation substances MB and MC can be formed in sequence from the substrate 100A side. Therefore, for the substrate 100A, the evaporation substance MA emitted from the evaporation source 11A, and the evaporation substances MB and MC emitted from the evaporation sources 11B and 11C are attached to the substrate 100A in this order. Therefore, the baffles 12A to 12C are set to the open state, and the baffle 12D is set to the closed state.

[0122] Fig.12 (B) shows the state of the first film formation in the middle of the state ST12, Fig.12 (C) Yes Fig.12 (B) is an enlarged view of the P5 portion. The baffles 12A to 12C are set to the open state, the baffle 12D is set to the closed state, and the vapor deposition unit 10 moves in the X1 direction. Since the vapor deposition source 11A is located at the front of the moving direction, the film of the vapor deposition material MA is first formed on the substrate 100A, and a mixed film of the vapor deposition materials MB and MC from the vapor deposition sources 11B and 11C is formed thereon. In this way, the first two layers of the film are formed on the substrate 100A.

[0123] Next, the state is transferred to the second film formation in state ST13. In the second film formation, the moving direction of the evaporation unit 10 is the X2 direction. Therefore, the leading side in the relative moving direction (X2 direction) relative to the substrate 100A is the evaporation source 11D side. In the second film formation, it is sufficient to form a mixed film of the evaporation substances MB and MC. Therefore, relative to the substrate 100A, the evaporation substances MB and MC emitted from the evaporation sources 11B and 11C are attached to the substrate 100A. Therefore, the baffles 12B and 12C are set to the open state, and the baffles 12A and 12D are set to the closed state.

[0124] Fig.13 (A) shows the state in the middle of the second film formation in state ST13, Fig.13 (B) Yes Fig.13(A) is an enlarged view of the P6 portion. The baffles 12B and 12C are set to the open state, the baffles 12A and 12D are set to the closed state, and the evaporation unit 10 moves in the X2 direction. A mixed film of the evaporation materials MB and MC from the evaporation sources 11B and 11C is formed on the substrate 100A. In this way, the remaining 1 layer of film is formed on the substrate 100A. As described above, the film formation of the substrate 100A is completed.

[0125] Thus, in this embodiment, by controlling the opening and closing of the shutters 12A to 12D, multi-layer film formation can be performed in one film formation operation, and the type of target film and the lamination order can be matched to various film formations. Therefore, multi-layer film formation can be performed efficiently.

[0126] <Second Embodiment>

[0127] During film formation, the substrate 100 and the vapor deposition unit 10 only need to be able to move relative to each other in the arrangement direction (X direction) of the vapor deposition sources 11A to 11D. In the first embodiment, during film formation, the position of the substrate 100 is fixed and the vapor deposition unit 10 is moved in the X direction. However, the position of the vapor deposition unit 10 may be fixed and the substrate 100 may be moved in the X direction. Alternatively, the vapor deposition unit 10 and the substrate 100 may move in opposite directions in the X direction.

[0128] <Third Embodiment>

[0129] In the first embodiment, the film formation is performed twice by reciprocating the vapor deposition unit 10 in the X direction relative to the substrate 100. However, the film formation may be performed once by moving the vapor deposition unit 10 in the X1 direction or the X2 direction relative to the substrate 100. Fig.14 and Fig.15 This is a diagram showing another example of the movement of the vapor deposition unit 10 during film formation.

[0130] Fig.14 State ST21 indicates a state where the vapor deposition unit 10 is located at an initial position. Film formation on the substrate 100A begins. After the opening and closing states of the baffles 12A to 12D in the closed state are set respectively, the vapor deposition unit 10 is moved in the direction X1 as shown in state ST22 by the moving unit 22. While the vapor deposition unit 10 moves relative to the substrate 100A, the vapor deposition material is released toward the substrate 100A, thereby forming a film of the vapor deposition material on the substrate 100A. After the movement, the baffles 12A to 12D are all in the closed state. Film formation on the substrate 100A ends here.

[0131] Next, the film forming operation is switched to the substrate 100B supported by the film forming stage 30B. As shown in state ST23, the vapor deposition unit 10 and the moving unit 22 are moved in the Y1 direction by the moving unit 24. The vapor deposition unit 10 is moved to a position aligned with the substrate 100B supported by the film forming stage 30B in the X direction in a plan view.

[0132] The film formation on the substrate 100B begins. After the opening and closing states of the shutters 12A to 12D in the closed state are set respectively, the vapor deposition unit 10 is moved in the X2 direction as shown in the state ST24 by the moving unit 22. While the vapor deposition unit 10 moves relative to the substrate 100B, the vapor deposition material is released toward the substrate 100B, thereby forming a film of the vapor deposition material on the substrate 100B. In addition, the operation of replacing the substrate 100A on which the film formation has been completed with the second substrate 100A can be performed in parallel on the film forming stage 30A. After the movement, the shutters 12A to 12D are all in the closed state. The film formation on the substrate 100B is now completed.

[0133] Next, the operation is shifted to the film forming operation of the substrate 100A supported by the film forming stage 30A. As shown in state ST25, the vapor deposition unit 10 and the moving unit 22 are moved in the Y2 direction by the moving unit 24. The vapor deposition unit 10 returns to the initial position.

[0134] Next, after the shutters 12A to 12D are set to open and close, the vapor deposition unit 10 is moved in the X1 direction as shown in state ST26 by the moving unit 22. While the vapor deposition unit 10 is moving relative to the substrate 100A, the vapor deposition material is released to the substrate 100A, so that the vapor deposition material is formed on the substrate 100A. In addition, the operation of replacing the substrate 100B on which the film formation has been completed with the second substrate 100B can be performed in parallel on the film formation stage 30B. After the movement, the shutters 12A to 12D are all in the closed state.

[0135] State ST26 is the same as state ST22. Thereafter, the film substrate 100 is alternately formed on the film forming stage 30A and the film forming stage 30B in the same order.

[0136] <Fourth Embodiment>

[0137] The vapor deposition unit 10 may be configured to move in a direction crossing the substrates 100A and 100B during film formation. Fig.16 is a plan view schematically showing the structure of the film forming apparatus 1 according to the present embodiment. Fig.17 yes Fig.16 1 is a front view of a film forming apparatus 1. Hereinafter, substantially the same configurations as those in the first embodiment are denoted by the same reference numerals and description thereof is omitted, and different configurations are described.

[0138] In the present embodiment, the vapor deposition unit 10 is moved only in the Y direction by the moving unit 22 , and there is no structure corresponding to the moving unit 24 of the first embodiment.

[0139] The vapor deposition unit 10 is extended in the X direction, and the vapor deposition sources 11A to 11D are arranged in the Y direction. Fig.16 and Fig.17 Although not shown in the figure, each vapor deposition source 11A to 11D is provided with the baffles 12A to 12D described in the first embodiment, but in the opening and closing directions, the baffles 12A and 12D move parallel to the Y direction, and the baffles 12B and 12C rotate circumferentially along the axis of the X direction.

[0140] Fig.16 and Fig.17 In this embodiment, the initial position of the vapor deposition unit 10 is a position between the film forming stage 30A and the film forming stage 30B in the Y direction (a position between the substrate 100A and the substrate 100B).

[0141] <Control Example>

[0142] Fig.18 and Fig.19 1 and 2 are diagrams showing examples of movement of the vapor deposition unit 10 during film formation. In each diagram, arrows Y11 and Y12 indicate a direction opposite to one of the Y directions.

[0143] Fig.18 State ST31 indicates a state where the vapor deposition unit 10 is located at the initial position. At the initial position, the vapor deposition unit 10 is located between the substrates 100A supported by the film forming stage 30A and the substrate 100B supported by the film forming stage 30B in a plan view so as to be aligned with these substrates.

[0144] The film formation on the substrate 100B starts. After the shutters 12A to 12D in the closed state are set to the open and closed states, the vapor deposition unit 10 is moved in the Y11 direction as shown in the state ST32 by the moving unit 22. While the vapor deposition unit 10 moves relative to the substrate 100B, the vapor deposition material is released toward the substrate 100B, so that the vapor deposition material is formed on the substrate 100B.

[0145] Next, after the shutters 12A to 12D are set to open and close, the vapor deposition unit 10 is moved in the Y12 direction as shown in state ST33 by the moving unit 22. While the vapor deposition unit 10 moves relative to the substrate 100B, the vapor deposition material is released toward the substrate 100B, thereby forming a film of the vapor deposition material on the substrate 100B. When the vapor deposition unit 10 returns to the initial position, all the shutters 12A to 12D are in the closed state.

[0146] As described above, in the present embodiment, by reciprocating the vapor deposition unit 10 in the Y direction with respect to the substrate 100B, it is possible to form a film twice on the substrate 100B.

[0147] Next, film formation on the substrate 100A is started. After the shutters 12A to 12D in the closed state are set to the open and closed states, the vapor deposition unit 10 is moved in the Y12 direction as shown in the state ST34 by the moving unit 22. While the vapor deposition unit 10 moves relative to the substrate 100A, the vapor deposition material is released toward the substrate 100A, so that the vapor deposition material is formed on the substrate 100A.

[0148] Next, after the opening and closing states of the shutters 12A to 12D are set respectively, the vapor deposition unit 10 is moved in the Y11 direction as shown in the state ST35 by the moving unit 22. While the vapor deposition unit 10 is moving relative to the substrate 100A, the vapor deposition material is released to the substrate 100A, so that the vapor deposition material is formed on the substrate 100A. In addition, the operation of replacing the substrate 100B on which the film formation has been completed with the second substrate 100B can be performed in parallel on the film forming stage 30B. When the vapor deposition unit 10 returns to the initial position, the shutters 12A to 12D are all in the closed state.

[0149] As described above, in the present embodiment, by reciprocating the vapor deposition unit 10 in the Y direction with respect to the substrate 100A, it is possible to perform film formation on the substrate 100A twice.

[0150] Next, film formation on the second substrate 100B is started. After the shutters 12A to 12D in the closed state are set to the open and closed states, the vapor deposition unit 10 is moved in the Y11 direction as shown in the state ST36 by the moving unit 22. While the vapor deposition unit 10 moves relative to the substrate 100B, the vapor deposition material is released toward the substrate 100B, so that the vapor deposition material is formed on the substrate 100B.

[0151] Next, after the opening and closing states of the shutters 12A to 12D are set respectively, the vapor deposition unit 10 is moved in the Y12 direction as shown in the state ST37 by the moving unit 22. While the vapor deposition unit 10 is moving relative to the substrate 100B, the vapor deposition material is released to the substrate 100B, so that the vapor deposition material is film-formed on the substrate 100B. In addition, the operation of replacing the substrate 100A on which the film has been formed with the second substrate 100A can be performed in parallel on the film-forming stage 30A. When the vapor deposition unit 10 returns to the initial position, the shutters 12A to 12D are all in the closed state.

[0152] State ST37 is the same as state ST33. Thereafter, the film substrate 100 is alternately formed on the film forming stage 30B and the film forming stage 30A in the same order.

[0153] Next, an example of opening and closing control of the shutter plates 12A to 12D and film formation on the substrate 100 will be described. Fig. 20 (A) illustrates an example of a target stacked structure of film formation control on the substrate 100 . Fig. 20 The stacking order of the target stacking structure of (A) is the order of the film of the vapor-deposited substance MA and the mixed film of the vapor-deposited substances MB and MC from the substrate 100 side.

[0154] by Figure 18-19 The film forming operation on the substrate 100B described in the states ST31 to ST33 and the states ST34 to ST35 are used as examples to explain the execution Fig. 20 (A) Film formation situation. Fig. 20 The target laminated structure of (A) is a two-layer structure. Therefore, one layer is formed in the first film formation, and the remaining layer is formed in the second film formation.

[0155] First, film formation is performed on the substrate 100B. In the initial position of state ST31, the control unit 43 sets the opening and closing of the baffles 12A to 12D. The moving direction of the evaporation unit 10 relative to the substrate 100B in the first film formation is the Y11 direction. Therefore, the leading side in the relative moving direction (Y11 direction) relative to the substrate 100B is the evaporation source 11A side. In the first film formation in state ST32, it is sufficient as long as a film of the evaporated substance MA can be formed. Therefore, for the substrate 100B, the evaporated substance MA emitted from the evaporation source 11A is attached to the substrate 100B. Therefore, only the baffle 12A is set to the open state, and the remaining baffles 12B to 12D are set to the closed state.

[0156] Fig. 20 (B) shows the state of the first film formation in the middle of the state ST32, Fig. 20 (C) Yes Fig. 20 (B) is an enlarged view of the P11 portion. Among the shutters 12A to 12D, only the shutter 12A is set to the open state, and the vapor deposition unit 10 moves in the Y11 direction. A film of the vapor deposition substance MA is formed on the substrate 100B.

[0157] Next, the state ST33 is transferred to the second film formation. In the second film formation, the moving direction of the evaporation unit 10 is the Y12 direction. Therefore, the leading side in the relative moving direction (Y12 direction) relative to the substrate 100B is the evaporation source 11D side. In the second film formation, it is sufficient as long as a mixed film of the evaporation substances MB and MC can be formed. Therefore, the evaporation substances MB and MC emitted from the evaporation sources 11B and 11C are attached to the substrate 100B. Therefore, the baffles 12B and 12C are set to the open state, and the remaining baffles 12A and 12D are set to the closed state.

[0158] Fig.21 (A) shows the state in the middle of the second film formation in state ST33, Fig.21 (B) Yes Fig.21 (A) is an enlarged view of the P12 portion. Among the baffles 12A to 12D, the baffles 12B and 12C are set to the open state, and the vapor deposition unit 10 moves in the Y12 direction. On the substrate 100B, a mixed film of the vapor deposition materials MB and MC from the vapor deposition sources 11B and 11C is formed on the film of the vapor deposition material MA formed for the first time. In this way, the remaining 1 layer of film is formed on the substrate 100B. As described above, the film formation of the substrate 100B is completed.

[0159] Next, the process moves to film formation on the substrate 100A. In the initial position of state ST33, the control unit 43 sets the opening and closing of the baffles 12A to 12D. The moving direction of the evaporation unit 10 relative to the substrate 100A in the first film formation is the Y12 direction. Therefore, the leading side in the relative moving direction (Y12 direction) relative to the substrate 100A is the evaporation source 11D side. In the first film formation in state ST34, as long as a film of the evaporation substance MA can be formed, it will suffice. Therefore, for the substrate 100A, the evaporation substance MA emitted from the evaporation source 11D is attached to the substrate 100A. Therefore, only the baffle 12D is set to the open state, and the remaining baffles 12A to 12C are set to the closed state.

[0160] Fig. 22 (A) shows the state of the first film formation in the middle of the state ST34, Fig. 22 (B) Yes Fig. 22 (A) is an enlarged view of the P13 portion. Among the shutters 12A to 12D, only the shutter 12D is set to the open state, and the vapor deposition unit 10 moves in the Y12 direction. A film of the vapor deposition substance MD (MA) is formed on the substrate 100A.

[0161] Next, the state ST35 is transferred to the second film formation. In the second film formation, the moving direction of the evaporation unit 10 is the Y11 direction. Therefore, the leading side in the relative moving direction (Y11 direction) relative to the substrate 100A is the evaporation source 11A side. In the second film formation, it is sufficient as long as a mixed film of the evaporation substances MB and MC can be formed. Therefore, the evaporation substances MB and MC emitted from the evaporation sources 11B and 11C are attached to the substrate 100A. Therefore, the baffles 12B and 12C are set to the open state, and the remaining baffles 12A and 12D are set to the closed state.

[0162] Fig. 22 (A) shows the state in the middle of the second film formation in state ST33, Fig. 22 (B) Yes Fig. 22(A) is an enlarged view of the P14 portion. Among the baffles 12A to 12D, the baffles 12B and 12C are set to the open state, and the vapor deposition unit 10 moves in the Y12 direction. On the substrate 100A, a mixed film of the vapor deposition materials MB and MC from the vapor deposition sources 11B and 11C is formed on the film of the vapor deposition material MA formed for the first time. In this way, the remaining 1 layer of film is formed on the substrate 100A. Thus, the film formation of the substrate 100A is also completed.

[0163] Thus, in this embodiment, films can be continuously formed on the substrate 100A and the substrate 100B. The above example is an example of forming films of the same laminated structure on the substrate 100A and the substrate 100B, but by controlling the opening and closing of the shutters 12A to 12D, films of different laminated structures can also be continuously formed on the substrate 100A and the substrate 100B.

[0164] In addition, in the present embodiment, the initial position of the vapor deposition unit 10 is set to a position between the film-forming stage 30A and the film-forming stage 30B in the Y direction (a position between the substrate 100A and the substrate 100B). In addition to this position, the initial position of the vapor deposition unit 10 may also be a position to the left of the film-forming stage 30A or a position to the right of the film-forming stage 30B. However, as in the present embodiment, by setting the position between the film-forming stage 30A and the film-forming stage 30B, when the substrate 100A and the substrate 100B are continuously formed, the vapor deposition unit 10 can be moved back and forth once relative to each substrate to form a film of the same laminated structure, and the film can be formed in a shorter time.

[0165] <Fifth Embodiment>

[0166] Next, an example of a method for manufacturing an electronic device is described. Next, as an example of an electronic device, the structure and manufacturing method of an organic EL display device are illustrated. In this example, a plurality of Figure 1 The film forming system SY shown.

[0167] First, the manufactured organic EL display device will be described. Fig.24 (A) is an overall view of an organic EL display device 50. Fig.24 (B) is a diagram showing a cross-sectional structure of one pixel.

[0168] like Fig.24 As shown in (A), a plurality of pixels 52 including a plurality of light emitting elements are arranged in a matrix in a display area 51 of an organic EL display device 50. Although the details will be described later, each light emitting element has a structure including an organic layer sandwiched by a pair of electrodes.

[0169] The pixel mentioned here refers to the smallest unit that can display the desired color in the display area 51. In the case of a color organic EL display device, the pixel 52 is composed of a combination of multiple sub-pixels of a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B representing different light emission. The pixel 52 is mostly composed of a combination of three sub-pixels, namely a red (R) light-emitting element, a green (G) light-emitting element, and a blue (B) light-emitting element, but is not limited to this. The pixel 52 may include at least one sub-pixel, preferably two or more sub-pixels, and more preferably three or more sub-pixels. As the sub-pixels constituting the pixel 52, for example, it may also be a combination of four sub-pixels, namely a red (R) light-emitting element, a green (G) light-emitting element, a blue (B) light-emitting element, and a yellow (Y) light-emitting element.

[0170] Fig.24 (B) Yes Fig.24 (A) is a partial cross-sectional schematic diagram of the AB line. The pixel 52 has a plurality of sub-pixels on the substrate 53, which are composed of an organic EL element having a first electrode (anode) 54, a hole transport layer 55, a red layer 56R, a green layer 56G, and a blue layer 56B, an electron transport layer 57, and a second electrode (cathode) 58. Among them, the hole transport layer 55, the red layer 56R, the green layer 56G, the blue layer 56B, and the electron transport layer 57 are equivalent to organic layers. The red layer 56R, the green layer 56G, and the blue layer 56B are respectively formed into patterns corresponding to light-emitting elements (sometimes also described as organic EL elements) that emit red, green, and blue.

[0171] In addition, the first electrode 54 is formed separately for each light-emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 may be formed together across a plurality of light-emitting elements 52R, 52G, and 52B, or may be formed for each light-emitting element. Fig.24 As shown in (B), the hole transport layer 55 can also be separated into a red layer 56R, a green layer 56G, and a blue layer 56B for each sub-pixel area on the basis of being formed as a common layer across multiple sub-pixel areas, and then the electron transport layer 57 and the second electrode 58 are formed as a common layer across multiple sub-pixel areas.

[0172] In order to prevent short circuits between adjacent first electrodes 54, an insulating layer 59 is provided between the first electrodes 54. Furthermore, since the organic EL layer is degraded by moisture or oxygen, a protective layer 60 is provided to protect the organic EL element from moisture or oxygen.

[0173] exist Fig.24In (B), the hole transport layer 55 and the electron transport layer 57 are represented by one layer, but they can also be formed by multiple layers having a hole blocking layer and an electron blocking layer depending on the structure of the organic EL display element. In addition, a hole injection layer having an energy band structure that can smoothly inject holes from the first electrode 54 to the hole transport layer 55 can also be formed between the first electrode 54 and the hole transport layer 55. Similarly, an electron injection layer can also be formed between the second electrode 58 and the electron transport layer 57.

[0174] The red layer 56R, the green layer 56G, and the blue layer 56B can be formed by a single light-emitting layer, or by stacking multiple layers. For example, the red layer 56R can be composed of two layers, the upper layer is formed by a red light-emitting layer, and the lower layer is formed by a hole transport layer or an electron blocking layer. Alternatively, the lower layer can be formed by a red light-emitting layer, and the upper layer can be formed by an electron transport layer or a hole blocking layer. By arranging a layer on the lower or upper side of the light-emitting layer in this way, it is possible to improve the color purity of the light-emitting element by adjusting the light-emitting position in the light-emitting layer and adjusting the optical path length.

[0175] In addition, although the example of the red layer 56R is shown here, the green layer 56G or the blue layer 56B may also adopt the same structure. In addition, the number of stacked layers may be more than 2 layers. Moreover, layers of different materials may be stacked, such as the light-emitting layer and the electron blocking layer, for example, layers of the same material may be stacked, such as more than 2 light-emitting layers.

[0176] Next, an example of a method for manufacturing an organic EL display device is specifically described. Here, it is assumed that the red layer 56R is composed of two layers, the lower layer 56R1 and the upper layer 56R2, and the green layer 56G and the blue layer 56B are composed of a single light-emitting layer.

[0177] First, a circuit (not shown) for driving the organic EL display device and a substrate 53 having a first electrode 54 formed thereon are prepared. The material of the substrate 53 is not particularly limited, and can be made of glass, plastic, metal, etc. In this embodiment, as the substrate 53, a substrate in which a polyimide film is laminated on a glass substrate is used.

[0178] A resin layer such as acrylic acid or polyimide is applied by bar coating or spin coating on the substrate 53 on which the first electrode 54 is formed, and the resin layer is patterned by photolithography to form an opening in the portion on which the first electrode 54 is formed, thereby forming an insulating layer 59. The opening corresponds to the light-emitting region where the light-emitting element actually emits light. In addition, in this embodiment, the large substrate is processed before the formation of the insulating layer 59, and after the formation of the insulating layer 59, a dividing step of dividing the substrate 53 is performed.

[0179] The substrate 53 having the insulating layer 59 patterned thereon is carried into the first film forming apparatus 1, and the hole transport layer 55 is formed as a common layer on the first electrode 54 in the display region. The hole transport layer 55 is formed using a mask having an opening formed in each display region 51 of the panel portion that eventually becomes an organic EL display device.

[0180] Next, the substrate 53 formed up to the hole transport layer 55 is moved into the second film forming device 1. The substrate 53 and the mask are aligned, the substrate is placed on the mask, and the red layer 56R is formed on the portion of the substrate 53 above the hole transport layer 55 where the element emitting red is arranged (the region forming the red sub-pixel). Here, the mask used in the second film forming chamber is a high-precision mask that forms openings in a plurality of regions that only become red sub-pixels among a plurality of regions on the substrate 53 that become sub-pixels of the organic EL display device. Thus, the red layer 56R including the red light-emitting layer is formed in a region that only becomes a red sub-pixel among the regions on the substrate 53 that become a plurality of sub-pixels. In other words, the red layer 56R is not formed in a region that becomes a blue sub-pixel or a region that becomes a green sub-pixel among the regions on the substrate 53 that become a plurality of sub-pixels, but is selectively formed in a region that becomes a red sub-pixel.

[0181] Similar to the formation of the red layer 56R, the green layer 56G is formed in the third film forming device 1, and the blue layer 56B is further formed in the fourth film forming device 1. After the formation of the red layer 56R, the green layer 56G, and the blue layer 56B is completed, the electron transport layer 57 is formed on the entire display area 51 in the fifth film forming device 1. The electron transport layer 57 is formed as a layer common to the three color layers 56R, 56G, and 56B.

[0182] The substrate on which the electron transport layer 57 is formed is moved to the sixth film forming device 1 to form the second electrode 58. In the present embodiment, in the first film forming device 1 to the sixth film forming device 1, the film formation of each layer is performed by vacuum evaporation. However, the present invention is not limited to this. For example, the film formation of the second electrode 58 in the sixth film forming device 1 can also be performed by sputtering. Then, the substrate on which the second electrode 58 is formed is moved to the sealing device, and the protective layer 60 is formed by plasma CVD (sealing process), thereby completing the organic EL display device 50. Here, the protective layer 60 is formed by the CVD method, but is not limited to this, and can also be formed by the ALD method or the inkjet method.

[0183] The present invention is not limited to the above-described embodiment, and various modifications and changes can be made within the scope of the gist of the invention.

[0184] Description of Reference Numerals

[0185] 1: film forming device, 10: evaporation unit, 11A to 11D: evaporation sources, 12A to 12D baffles, 43: control unit.

Claims

1. A film forming device, characterized in that: The film forming device comprises: The vapor deposition component comprises: a plurality of vapor deposition sources arranged in a predetermined direction to release vapor deposition materials toward the substrate; and a plurality of baffles to open and close the plurality of vapor deposition sources relative to the substrate; a moving member for relatively moving the substrate and the evaporation member in the prescribed direction during film formation; as well as A control component controls the opening and closing of the plurality of baffles, The plurality of vapor deposition sources include a plurality of vapor deposition sources that emit vapor deposition materials of different types. The control unit controls the opening and closing of each shutter during film formation according to the type of the vapor deposition material stacked on the substrate and the stacking order thereof.

2. The film forming device according to claim 1, characterized in that: The moving member can relatively move the substrate and the vapor deposition member in a second direction opposite to the first direction of the predetermined direction. The control unit controls the opening and closing of each shutter during film formation according to the type of vapor deposition material stacked on the substrate and its stacking order, and whether the relative movement direction of the substrate and the vapor deposition unit is the first direction or the second direction.

3. The film forming device according to claim 1, characterized in that: The control unit controls opening and closing of each shutter during film formation so that the vapor deposition material of the type to be layered on the substrate is released from the leading side in the relative moving direction of the vapor deposition unit with respect to the substrate in the layering order.

4. The film forming device according to claim 1, characterized in that: The plurality of vapor deposition sources include a first vapor deposition source, a second vapor deposition source, a third vapor deposition source, and a fourth vapor deposition source arranged along the predetermined direction. The first evaporation source emits a first evaporation substance, The second evaporation source emits a second evaporation substance, The third vapor deposition source releases the third vapor deposition material in such a manner that the release area overlaps with the second vapor deposition source. The fourth evaporation source releases the first evaporation substance.

5. The film forming device according to claim 4, characterized in that: The control unit controls the opening and closing of each shutter during film formation so that the first to fourth vapor deposition sources are opened with respect to the substrate.

6. The film forming device according to claim 4, characterized in that: The control unit controls the opening and closing of each shutter during film formation so that the first vapor deposition source is closed relative to the substrate and the second to fourth vapor deposition sources are opened relative to the substrate.

7. The film forming device according to claim 4, characterized in that: The control unit controls the opening and closing of each shutter during film formation so that the fourth vapor deposition source is closed relative to the substrate and the first to third vapor deposition sources are opened relative to the substrate.

8. The film forming device according to claim 4, characterized in that: The control unit controls the opening and closing of each shutter during film formation so that the first vapor deposition source and the fourth vapor deposition source are closed relative to the substrate and the third vapor deposition source and the fourth vapor deposition source are opened relative to the substrate.

9. The film forming device according to claim 1, characterized in that: The baffle is provided for each of the vapor deposition sources.

10. The film forming device according to claim 1, characterized in that: The plurality of baffles include a rotating baffle and a sliding baffle.

11. The film forming device according to claim 4, characterized in that: The plurality of baffles include: a first baffle, opening and closing the first evaporation source relative to the substrate; a second baffle, opening and closing the second evaporation source relative to the substrate; a third baffle, opening and closing the third evaporation source relative to the substrate; as well as The fourth shutter opens and closes the fourth vapor deposition source relative to the substrate.

12. The film forming device according to claim 11, characterized in that: The second baffle and the third baffle are rotating baffles. The first baffle plate and the fourth baffle plate are sliding baffle plates.

13. The film forming device according to claim 11, characterized in that: The first baffle to the fourth baffle are all rotating baffles.

14. A control method, which is a control method for a film forming device, The film forming device comprises: The vapor deposition component comprises: a plurality of vapor deposition sources arranged in a predetermined direction and emitting vapor deposition materials toward a substrate; and a plurality of baffles opening and closing the plurality of vapor deposition sources relative to the substrate; and a moving member for relatively moving the substrate and the vapor deposition member in the predetermined direction during film formation, It is characterized in that The plurality of vapor deposition sources include a plurality of vapor deposition sources that emit vapor deposition materials of different types. The control method includes a step of controlling the opening and closing of each shutter during film formation according to the type of vapor deposition material layered on the substrate and the layering order thereof.

15. A method for manufacturing an electronic device, characterized in that: The method for manufacturing an electronic device includes a film forming step of forming a film on a substrate using the film forming apparatus according to claim 1 .

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