Substrate manufacturing method and substrate manufactured by using same

Abstract

A method of providing a stable connector for a deposition apparatus is presented. The method may include forming a dome-shaped electrode connector inside a ceramic material, drilling a portion of the ceramic material and a portion of the dome-shaped electrode connector to flatten the electrode connector; and incorporating the rod into the remaining portion of the electrode connector. The method will provide a stable electrode connector that can maintain the entire length of the rod bonded thereto. The length of the flat electrode connector can be 5mm.

Description

Technical Field

[0001] The present disclosure relates to a susceptor, and more particularly to a susceptor manufacturing method and a susceptor manufactured using the method. The susceptor may be a component in a wafer processing device that uses plasma to process wafers. Background Art

[0002] In wafer processing equipment, susceptors may be used to heat and support the wafer during processing.

[0003] Below the wafer support, the rods may be connected to electrodes in the base, which are the connections from the RF mesh or heating elements to the rods.

[0004] However, such electrode-rod connections may degrade due to thermal expansion, cooling contraction, and physical stresses that may be caused by physical movement, and the degradation may result in physical disconnection and / or loss of bonding between the electrode and the rod.

[0005] To minimize the risk of disconnection, it is best to use large electrodes with a large contact area with the rod. When the electrode has a large contact area with the rod, the impedance during heating will be reduced, thereby enhancing the bond between the RF mesh or heating element and the rod.

[0006] However, larger electrodes are more difficult to manufacture than conventional electrodes because the risk of cracks at the apex is much higher, especially when sintering inside the ceramic material.

[0007] Therefore, the present disclosure proposes a method for manufacturing a larger electrode without cracks and an electrode manufactured by the method. Summary of the invention

[0008] This summary is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the detailed description of the example embodiments disclosed below. This summary is not intended to identify the key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0009] According to one embodiment, a method for providing a stable connector that connects a heating element to a rod in a deposition device can be provided, the method comprising: forming a dome-shaped electrode connector inside a ceramic material; drilling out a portion of the ceramic material and a portion of the dome-shaped electrode connector to flatten the electrode connector; and bonding the rod to the remaining portion of the electrode connector.

[0010] In at least one aspect, the dome-shaped electrode connector has a length equal to or greater than 5 mm.

[0011] In at least one aspect, the width of the rod is equal to or less than the length of the dome-shaped electrode connector.

[0012] According to one embodiment, a substrate processing device having a stable electrode connection space for connecting an electrode and a rod can be provided, the device comprising: a chamber defined by a wall surrounding the chamber; a shower head disposed on an upper side of the chamber; a base configured to support a substrate, the base comprising a plurality of radio frequency (RF) grids, a plurality of heating elements, a rod and an electrode connector, wherein the rod is connected to the electrode connector, and a width of the electrode connector is greater than a diameter of the rod.

[0013] In at least one aspect, the rods include a heating rod and an RF rod.

[0014] In at least one aspect, the RF rod is connected to the electrode connector.

[0015] In at least one aspect, the electrode connector is manufactured using the method defined above. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the sizes of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the illustrated embodiments of the present disclosure.

[0017] Figure 1(a) to Figure 1(c) The sequence illustrates how an electrode connector may be formed according to an embodiment of the present disclosure.

[0018] FIG. 2( a ) shows how a rod and a connector are combined in the prior art.

[0019] FIG. 2( b ) shows how the rod and the connector are combined according to an embodiment of the present disclosure.

[0020] Figure 3 A flow chart showing a sequence of how a rod-connector combination is formed according to an embodiment of the present disclosure.

[0021] Figure 4 A substrate processing apparatus according to an embodiment of the present disclosure is shown. DETAILED DESCRIPTION

[0022] Although certain embodiments and examples are disclosed below, those skilled in the art will appreciate that the invention extends beyond the specifically disclosed embodiments and / or uses of the invention and their obvious modifications and equivalents. Therefore, it is intended that the scope of the disclosed invention should not be limited by the specifically disclosed embodiments described below.

[0023] As used herein, the term "substrate" may refer to any one or more underlying materials, including any one or more underlying materials that may be modified or on which a device, circuit, or film may be formed. A "substrate" may be continuous or non-continuous; rigid or flexible; solid or porous; and combinations thereof. A substrate may be in any form, such as a powder, a plate, or a workpiece. A plate-like substrate may include wafers of various shapes and sizes. A substrate may be made of semiconductor materials, including, for example, silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide.

[0024] For example, a substrate in powder form can be used in drug manufacturing. The porous substrate can include a polymer. Examples of workpieces can include medical devices (such as stents and syringes), jewelry, tool equipment, components for battery manufacturing (such as anodes, cathodes, or separators), or components of photovoltaic cells, etc.

[0025] The continuous substrate may extend beyond the boundaries of the processing chamber in which the deposition process occurs. In some processes, the continuous substrate may be moved through the process chamber so that the process continues until the end of the substrate is reached. The continuous substrate may be provided from a continuous substrate feed system to allow the continuous substrate to be manufactured and output in any suitable form.

[0026] Non-limiting examples of continuous substrates may include sheets, nonwoven films, rolls, foils, webs, flexible materials, bundles of continuous filaments or fibers (eg, ceramic fibers or polymer fibers). A continuous substrate may also include a carrier or sheet on which a discontinuous substrate is mounted.

[0027] The illustrations presented herein are not meant to be actual views of any particular material, structure, or device but are merely idealized representations used to describe embodiments of the present disclosure.

[0028] The specific embodiments shown and described are illustrations of the present invention and its best mode and are not intended to limit the scope of these aspects and implementations in any way. In fact, for the sake of brevity, the traditional manufacturing, connection, preparation and other functional aspects of the system may not be described in detail. In addition, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or physical connections between various elements. Many alternative or additional functional relationships or physical connections may exist in actual systems, and / or may not exist in some embodiments.

[0029] It should be understood that the configuration and / or method described herein are exemplary in nature, and these specific embodiments or examples should not be considered restrictive, because many variations are possible. The specific routine or method described herein can represent one or more of any number of processing strategies. Therefore, the various actions shown can be performed in the order shown, in other orders, or omitted in some cases.

[0030] The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various processes, systems and configurations, and other features, functions, acts and / or properties disclosed herein, and any and all equivalents thereof.

[0031] from Figure 1(a) to Figure 1(c) It is shown how a connector embodiment may be formed according to the present disclosure.

[0032] In Fig. 1(a), an electrode connector 110 is located inside a ceramic material 100. Typically, the ceramic material 100 is located below a wafer support (not shown) in a wafer processing apparatus.

[0033] According to the present disclosure, the electrode connector 110 may have a dome shape.

[0034] In order to minimize the risk of cracks, the electrode connector 110 of the present disclosure may have a dome shape as shown in FIG. 1( a ).

[0035] Drilling or surface machining may remove the block of ceramic material including the dome-shaped portion 120 for bonding the rod 130 to the drilled electrode connector 112 .

[0036] The top of the remaining portion of the electrode connector 111 will be flattened by drilling so that the rod can be bonded to a flat surface.

[0037] 1(c) shows the attachment and bonding of a rod 130 to a drilled electrode connector 112 in a ceramic material 102, in accordance with an embodiment of the present invention. The rod 130 and electrode connector 112 are bonded by brazing using sheet metal.

[0038] The length of the electrode connector 112 may be at least equal to or greater than the width of the rod 130 .

[0039] FIG. 2( a ) and FIG. 2( b ) show a comparison between the prior art and an embodiment of the present disclosure.

[0040] FIG2(a) shows how the rod is combined with the electrode connector in the prior art reference. And FIG2(b) shows the same situation as FIG1(c) when the method according to the present disclosure is performed. It can be seen that the length of the electrode connector 210 is not as large as the rod 220, so the length of the contact area 230 may not include the entire rod 220.

[0041] FIG2(b) shows that the contact area 231 is much longer (larger contact) than the prior art counterpart in FIG2(a), and can well contain a sufficient length of the rod 221. As described above, the bonding method between the rod 221 and the electrode connector 231 is brazing with sheet metal (e.g., Au filler).

[0042] Since the length of electrode connector 211 can be longer than rod 221 in larger contact 231, the bond can be stronger than 230, and the impedance will be less than that of 230 (due to the larger contact area). This can reduce the possibility of physical and thermal stresses due to heating and movement during wafer processing.

[0043] Figure 3 A flow chart of a method according to an embodiment of the present disclosure is shown.

[0044] The electrode connector may be prepared to have a dome shape in the ceramic material 310. As previously mentioned, such a dome-shaped connector is less likely to develop cracks in the ceramic material, especially in the apex region.

[0045] When inside the ceramic material, the ceramic material and a portion of the dome-shaped electrode connector are drilled out 320. The ceramic material will have a higher chance of cracking, especially in sharp areas such as edges or vertices. The dome shape of the electrode connector will remove some of the sharp edges and vertices, thereby reducing the possibility of cracking even during drilling out. This drilling will flatten the electrode connector on the contact surface 231 shown in Figure 2(b) and will create an area for the rod.

[0046] After drilling, the rod is attached to the drilled flat area of ​​the electrode connector 330. This bond will be stronger because the rod can sit well within the flat bonding area so that the bonding force created will be stronger and when the heat is turned on, the large area will reduce the impedance created.

[0047] In the prior art, the length of the bonding area in Figure 2(a) is usually 3 mm. Increasing the length means a higher probability of cracking.

[0048] Using the methods presented in the present disclosure, the length of the bonding area 231 can be increased to 5 mm or more, which can be important because the rod 221 can fit well within the electrode connector 211.

[0049] Figure 4 A substrate processing apparatus according to an embodiment of the present disclosure is shown.

[0050] The substrate processing apparatus 400 may include a wall surrounding a space 490, which may be used to process the substrate 405. The substrate processing apparatus 400 may also include a showerhead 420, which may be used to generate plasma and disperse gas for processing the substrate 405. The substrate processing apparatus 400 may also include a susceptor 450, which may be used to support the substrate 405.

[0051] The pedestal 450 may include a plurality of radio frequency (RF) meshes 440 and a plurality of heating elements 430. The pedestal 450 may also include rods 460, 470 and electrodes 480. The rods may include heating rods 460 and RF rods 470.

[0052] Generally, the showerhead 420 may be used as an upper electrode, and a lower electrode 480 may be installed in a pedestal for generating plasma. The electrode 480 may be used as an electrode connector 480 connected to a rod. The rod connected to the electrode connector 480 may be an RF rod.

[0053] As previously described, the width (or diameter if the electrode can be circular) of the rod 470 connected to the electrode (connector) 480 and the electrode 480 can be larger than the diameter of the rod 470 so that the rod 470 can be firmly attached to the electrode 480.

[0054] The arrangement of the above method is only an illustration of the application of the principles of the present invention, and many other embodiments and modifications may be made without departing from the spirit and scope of the present invention defined in the claims. Therefore, the scope of the present invention should not be determined with reference to the above description, but with reference to the full scope of the attached claims and their equivalents.

Claims

1. A method of providing a stable connector for connecting a heating element to a rod in a deposition apparatus, the method comprising: forming a dome-shaped electrode connector within the ceramic material; drilling out a portion of the ceramic material and a portion of the dome-shaped electrode connector to flatten the electrode connector; and Incorporate the rod into the remainder of the electrode connector.

2. The method according to claim 1, wherein: The length of the dome-shaped electrode connector is equal to or greater than 5 mm.

3. The method according to claim 1, wherein: The width of the rod is equal to or less than the length of the dome-shaped electrode connector.

4. A substrate processing device having a stable electrode connection space for connecting an electrode and a rod, the device comprising: a chamber defined by a wall surrounding the chamber; a sprinkler head, arranged on the upper side of the chamber; A susceptor is configured to support a substrate, the susceptor comprising a plurality of radio frequency (RF) grids, a plurality of heating elements, rods, and electrode connectors, wherein the rods are connected to the electrode connectors, and a width of the electrode connectors is greater than a diameter of the rods.

5. The substrate processing apparatus according to claim 4, wherein: The rods include a heating rod and an RF rod.

6. The substrate processing apparatus according to claim 5, wherein: The RF rod is connected to the electrode connector.

7. The substrate processing apparatus according to claim 4, wherein: The electrode connector is manufactured by the method according to any one of claims 1-3.

Images