Low heat dissipation transceiver module with co-packaged optoelectronic chips

Abstract

The present invention discloses a low-heat-consumption transceiver module in which optoelectronic chips are co-packaged, comprising: a cover plate, an electro-optical modulation chip, a monitoring photodetection chip, a receiving photodetection chip, a first base, a second base, a control chip, a transimpedance amplifier chip, a bottom plate, a tube shell, a first input optical fiber, a second input optical fiber, and an output optical fiber; a top cavity and a first bottom cavity are arranged on the first base in a vertical direction from top to bottom, and an electro-optical modulation chip and a receiving photodetection chip are bonded to the inside of the top cavity. By co-packaging the electro-optical modulation chip, the receiving photodetection chip, and corresponding supporting chips, the integration and high-frequency performance are improved. By welding the bottom plate solder balls to the external printed circuit board, radio frequency signals, control signals, and status signals can be transmitted and received, avoiding the need for radio frequency connector switching. By welding the passive and active components in the module in layers and cavities, the vertical space is fully utilized, and a reasonable heat dissipation layout is implemented.

Description

Technical Field

[0001] The present invention relates to the technical field of optoelectronic hybrid integrated packaging, and in particular to a low-heat-consumption transceiver module co-packaged with optoelectronic chips. Background Art

[0002] RF transceiver modules play an important role in RF signal transmission and communication. Microwave photonics technology can improve the broadband performance of RF transceiver modules due to its high-frequency and broadband characteristics. The electro-optical modulator in microwave photonics technology serves as an electro-optical conversion unit, which can realize the receiving function of the RF transceiver module, receive RF signals and convert them into the optical domain, and transmit them through optical signals. The photodetector in microwave photonics technology serves as a photoelectric conversion unit, which receives optical signals and converts them into RF signal output, thereby realizing the transmitting function of the RF transceiver module. Therefore, the electro-optical modulator and the photodetector are integrated into one module, which can also have RF transceiver functions. There are currently many solutions for optoelectronic transceiver modules, but there are still some shortcomings, mainly for the following three reasons:

[0003] 1. Optoelectronic transceiver modules are a crucial link connecting microwaves and lightwaves. Currently, highly integrated microwave circuits often utilize integrated packaging by surface-mounting microwave components on printed circuit boards to avoid size limitations of RF connectors, thereby further improving the integration of microwave systems. However, independently packaged electro-optical modulators require a control loop formed by components such as optical beam splitters, monitoring photodetection chips, and control circuits to stabilize the bias operating point. To reduce the impact of parasitic parameters on high-frequency performance, independently packaged photodetectors require the bias circuit, matching circuit, and transimpedance amplifier chip to be placed as close as possible to the photodetector. The RF interfaces of independently packaged electro-optical modulators and photodetectors are generally SMA, SMP, SSMP, and other interfaces and connectors. Therefore, constructing an optoelectronic transceiver module using independently packaged electro-optical modulators and photodetectors presents challenges such as large size and an interface that is incompatible with the interfaces of highly integrated microwave circuits.

[0004] 2. The conversion efficiency of lasers is low. Therefore, when a laser produces strong laser output, it will be accompanied by high heat consumption, and generally requires a corresponding heat sink and heat dissipation device. Integrating the laser, electro-optic modulator, photodetector and supporting heat dissipation devices into a single module will result in larger module heat consumption and larger size.

[0005] 3. Co-packaging the electro-optical modulation chip, photodetection chip, and supporting driver chip into a single module offers low heat dissipation. However, due to the large number of electro-optical modulation chips, photodetection chips, and supporting driver chips, all chips are interconnected horizontally, failing to fully utilize the vertical dimension for integration, resulting in a larger horizontal size for the entire module. Summary of the Invention

[0006] In order to solve the technical problems existing in the background technology, the present invention proposes a low heat consumption transceiver module in which optoelectronic chips are co-packaged.

[0007] The low-heat-consumption transceiver module with optoelectronic chips co-packaged in the present invention includes: a cover plate, an electro-optical modulation chip, a monitoring photoelectric detection chip, a receiving photoelectric detection chip, a first base, a second base, a control chip, a transimpedance amplifier chip, a bottom plate, a tube shell, a first input optical fiber, a second input optical fiber, and an output optical fiber; a top cavity and a first bottom cavity are sequentially arranged on the first base in a vertical direction from top to bottom, an electro-optical modulation chip and a receiving photoelectric detection chip are bonded to the inside of the top cavity, a monitoring photoelectric detection chip is bonded to the top of the electro-optical modulation chip, a control chip and a transimpedance amplifier chip are welded to the top of the bottom plate, and the center of the first input optical fiber is connected to the receiving photoelectric detection chip. The center of the photosensitive surface of the measuring chip coincides with the center of the input optical coupling port of the electro-optical modulation chip, the center of the second input optical fiber coincides with the center of the input optical coupling port of the electro-optical modulation chip, the input light of the second input optical fiber is incident on the input optical coupling port of the electro-optical modulation chip through end-face coupling, the center of the output optical coupling port of the electro-optical modulation chip coincides with the center of the output optical fiber, the output light of the output optical coupling port of the electro-optical modulation chip is incident on the output optical fiber through end-face coupling, the electro-optical modulation chip is electrically connected to the control chip, the monitoring photodetection chip is electrically connected to the control chip, and the receiving photodetection chip is electrically connected to the transimpedance amplifier chip, so as to realize the bias control closed loop of the electro-optical modulation chip.

[0008] Preferably, the first base is co-fired or welded on the top of the second base, the second base is welded to the top of the base plate, a tube shell is welded on the upper surface of the base plate, and a cavity that can accommodate the first base and the second base is provided on the tube shell, and a cover plate is welded on the top of the tube shell.

[0009] Preferably, the first bottom cavity is connected to the top of the second base, a second bottom cavity is provided on the second base in the vertical direction, and the second bottom cavity is connected to the top of the bottom plate; a first input optical fiber, a second input optical fiber and an output optical fiber are welded to one side of the tube shell, and the first input optical fiber, the second input optical fiber and the output optical fiber all extend to the cavity of the tube shell and are bonded to the inside of the top cavity, and the first input optical fiber, the second input optical fiber and the output optical fiber are welded to the tube shell for sealed packaging.

[0010] Preferably, the base plate includes a base plate medium, a welding belt, a base plate surface wiring, a base plate metal via, and a bottom solder ball; a plurality of base plate surface wirings are provided on the upper surface of the base plate medium, a plurality of groups of base plate metal vias are arrayed on the base plate medium, and the plurality of groups of base plate metal vias are distributed in a vertical direction, and the bottom ends of the plurality of groups of base plate metal vias are welded with bottom solder balls in a one-to-one correspondence; the base plate surface wiring is used for welding and mounting the second base, the control chip and the transimpedance amplifier chip, and for signal transmission; the base plate metal vias are used for signal transmission between the second base, the control chip and the transimpedance amplifier chip on the one hand, and the base plate metal vias located below the control chip and the transimpedance amplifier chip on the other hand are used to form a heat dissipation channel.

[0011] Preferably, the first base includes a first base body, a top cavity, a first bottom cavity, first base surface wiring and first base metal vias; the upper surface of the first base body is located on both sides of the top cavity and is provided with multiple groups of first base surface wirings, the interior of the first base body is located on both sides of the top cavity and is provided with multiple groups of first base metal vias, and the multiple groups of first base metal vias correspond one-to-one to the multiple groups of first base surface wirings, and the top of the first base metal vias is electrically connected to the first base surface wiring.

[0012] Preferably, the second base includes a second base body, a second base metal via, a second base surface wiring, a matching load, a bias capacitor, a bias inductor and a second bottom cavity; a bias capacitor and a bias inductor are welded on the upper surface of the second base body, and the bias capacitor and the bias inductor are wire-bonded to each other, and the bottom solder ball on the base plate feeds the bias voltage, which is sequentially passed through the corresponding base plate metal via, the second base metal via, the second base surface wiring, the bias capacitor, the bias inductor, the first base metal via and the first base surface wiring to provide the bias voltage to the receiving photodetection chip; the matching load welded on the upper surface of the second base body matches the RF output of the receiving photodetection chip through the second base surface wiring, the second base metal via, the first base metal via and the first base surface wiring in sequence; the second bottom cavity is used to accommodate the control chip and the transimpedance amplifier chip, and the multiple second base metal vias and multiple second base surface wirings of the second base are used for signal transmission.

[0013] Preferably, the upper surface of the electro-optical modulation chip is flush with the upper surface of the top cavity; the interface of the electro-optical modulation chip includes an input optical coupling port, an RF input electrode, a bias input electrode, an output optical coupling port and a monitoring optical coupling port; the input optical coupling port and the output optical coupling port are end-face coupling structures, which are used for optical coupling between the electro-optical modulation chip and the input light and the output light, and the monitoring optical coupling port is an arrayed waveguide grating or an on-chip optical reflection structure, which is used for vertical optical coupling between the monitoring lights; the RF input electrode is an RF signal loading port, and the bias input electrode is a bias voltage loading port; the RF input electrode and the bias input electrode are respectively connected to the first base wire bonding, and the RF input electrode is divided into two ends, one end of which is connected to an external RF signal, which is fed into the external RF signal through the bottom solder ball on the bottom plate, and is fed into the RF input electrode through the bottom plate metal via corresponding to the bottom solder ball, the second base metal via, the first base metal via and the first base surface wiring wire bonding, and the other end is connected to the RF load on the electro-optical modulation chip.

[0014] Preferably, the interface of the control chip includes a monitoring input port, a bias output port, a download input port and a status output port; the monitoring input port, the bias output port, the download input port and the status output port are respectively connected to the base plate lead bonding; the monitoring input port is sequentially connected to the monitoring output port lead bonding of the monitoring photoelectric detection chip through the base plate surface wiring, the second base metal via, the first base metal via and the first base surface wiring; the bias output port is sequentially connected to the bias input electrode lead bonding of the electro-optical modulation chip through the base plate surface wiring, the second base metal via, the first base metal via and the first base surface wiring; the download input port is sequentially connected to the bottom solder ball through the base plate surface wiring and the base plate metal via, and the control program update and download signals are input through the bottom solder ball; the status output port is sequentially connected to the bottom solder ball through the base plate surface wiring and the base plate metal via, and the status signal of the control chip is output through the bottom solder ball.

[0015] Preferably, the interface of the transimpedance amplifier chip includes an amplifying input port and an amplifying output port. The amplifying input port is electrically connected to the RF output electrode of the receiving photodetection chip through the surface wiring of the base plate, the second base metal via, the first base metal via and the first base surface wiring in sequence. The RF signal output by the receiving photodetection chip is amplified by the transimpedance amplifier chip and output through the amplifying output port, the surface wiring of the base plate, the metal via of the base plate and the bottom solder ball in sequence.

[0016] Preferably, the monitoring photodetection chip interface includes a monitoring optical port and a monitoring output port, the monitoring optical port is located on the lower surface of the monitoring photodetection chip, and the monitoring output port is located on the upper surface of the monitoring photodetection chip; the monitoring optical port of the monitoring photodetection chip coincides with the monitoring optical coupling port of the electro-optical modulation chip; the monitoring output port is wire-bonded to the first base, and the monitoring output port is wire-bonded to the monitoring input port of the control chip in sequence through the first base surface wiring, the first base metal via, the second base metal via, and the bottom plate surface wiring;

[0017] The receiving photodetection chip is bonded or welded to the upper surface of the first base, and the receiving photodetection chip has a photosensitive surface and a radio frequency output electrode; the photosensitive surface is located on the side of the receiving photodetection chip, and the radio frequency output electrode is located on the bottom surface of the receiving photodetection chip. The radio frequency output electrode is sequentially connected to the bias capacitor, bias inductor and matching load lead bonding welded on the upper surface of the second base through the first base surface wiring, the first base metal via and the second base surface wiring; the radio frequency output electrode of the receiving photodetection chip is sequentially connected to the amplifier input port lead bonding of the transimpedance amplifier chip through the first base surface wiring, the first base metal via, the second base metal via and the bottom plate surface wiring.

[0018] In the present invention, the proposed low-heat-consumption transceiver module with co-packaged optoelectronic chips is achieved by co-packaging an electro-optical modulation chip, a monitoring photodetection chip, a receiving photodetection chip, and a control chip. The monitoring photodetection chip is surface-mounted on the electro-optical modulation chip for optical transmission. The electro-optical modulation chip, the monitoring photodetection chip, and the control chip are connected to the circuit by wire bonding with metal vias in the first and second bases, completing the bias control closed loop of the entire electro-optical modulation chip. The receiving photodetection chip, the transimpedance amplifier chip, the bias capacitor, the bias inductor, and the matching load are co-packaged in the internal cavity through the first and second bases. While realizing the optoelectronic transceiver function, all optoelectronic chips are co-packaged and integrated in the vertical direction to reduce the vertical size of the entire module. The electro-optical modulation chip and the receiving photodetection chip have low heat consumption, and the entire module has low heat consumption. The present invention implements a layered and cavity-based design for active and passive components within the module, encapsulating passive low-heat-consumption components such as bias capacitors, bias inductors, and matching loads between the first and second base bodies, and encapsulating two active chips, a control chip and a transimpedance amplifier chip, on the base plate. The metal vias in the base plate under the control chip and the transimpedance amplifier chip form a heat dissipation channel for heat dissipation, thereby improving the heat dissipation capacity of the control chip and the transimpedance amplifier chip. On the one hand, the electro-optical modulation chip adopts an end-face coupling scheme to couple light with the input optical fiber and the output optical fiber, which can reduce the vertical height of the entire module, highly adapt to the microwave circuit packaging device, and is easy to co-package with the microwave packaging device. On the other hand, a surface-mount monitoring photodetection chip solution is adopted for monitoring light coupling. Compared with the end-face coupling scheme, the surface-mount coupling method has the shortest optical path, which can reduce the complexity of coupling assembly and reduce the size of the entire module. The receiving photodetection chip adopts an end-face coupling method to receive optical signals, which can reduce the vertical height of the entire module. The RF electrode for the receiving photodetector chip is located on the chip's bottom surface and is soldered to the top surface of the first base. This shortens the RF transmission path, places the bias circuit, matching circuit, and transimpedance amplifier chip as close to the photodetector as possible, and reduces the impact of parasitic parameters on high-frequency performance, resulting in improved high-frequency performance. Signals such as the electro-optical modulator chip's RF signal, the photodetector chip's output signal, the control chip's download signal, and the control chip's status signal are transmitted via solder balls on the bottom of the base plate to the external printed circuit board. This eliminates the need for RF connector adapters, reduces the overall module size, and enables solder integration with microwave circuits. The first base has a top cavity at the top, where the electro-optical modulator chip is mounted. The top surface of the electro-optical modulator chip is flush with the top surface of the cavity, minimizing the wire bonding distance between the modulator chip's RF port and the metal vias of the first base, thereby improving the high-frequency performance of the electro-optical modulator chip. The RF load is integrated within the chip, eliminating RF losses associated with soldering the RF load to the first base and wire bonding to it. The housing is soldered to the cover plate, input and output optical fibers, and base plate, creating a sealed package with high reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 This is a schematic diagram of the three-dimensional structure of the low-heat-consumption transceiver module with co-packaged optoelectronic chips proposed in the present invention;

[0020] Figure 2 This is a schematic diagram of the electro-optical modulation chip structure of the low-heat-consumption transceiver module with co-packaged optoelectronic chips proposed in the present invention;

[0021] Figure 3 This is a schematic structural diagram of the first base and receiving photoelectric detection chip of the low-heat consumption transceiver module co-packaged with the photoelectric chip proposed in the present invention;

[0022] Figure 4 This is a schematic diagram of the second base structure of the low-heat-consumption transceiver module with co-packaged optoelectronic chips proposed in the present invention;

[0023] Figure 5 This is a schematic diagram of the bottom plate structure of the low-heat-consumption transceiver module with co-packaged optoelectronic chips proposed in the present invention.

[0024] Legend:

[0025] 1. Cover plate; 2. Electro-optical modulation chip; 21. Input optical coupling port; 22. RF input electrode; 23. Bias input electrode; 24. Output optical coupling port; 25. Monitoring optical coupling port; 26. RF load; 3. Monitoring photodetection chip; 31. Monitoring optical port; 32. Monitoring output port; 4. Receiving photodetection chip; 41. Photosensitive surface; 42. RF output electrode; 5. First base; 51. First base body; 52. Top cavity; 53. First bottom cavity; 54. Surface wiring of first base; 55. Metal via of first base; 6. Second base; 61. Second base body; 62. Second bottom Base metal via; 63, second base surface wiring; 64, matching load; 65, bias capacitor; 66, bias inductor; 67, second bottom cavity; 7, control chip; 71, monitoring input port; 72, bias output port; 73, download input port; 74, status output port; 8, transimpedance amplifier chip; 81, amplifier input port; 82, amplifier output port; 9, bottom plate; 91, bottom plate medium; 92, welding tape; 93, bottom plate surface wiring; 94, bottom plate metal via; 95, bottom solder ball; 10, tube shell; 11, first input optical fiber; 12, second input optical fiber; 13, output optical fiber. DETAILED DESCRIPTION

[0026] Reference Figure 1-5The low-heat-consumption transceiver module with optoelectronic chips co-packaged in the present invention includes: a cover plate 1, an electro-optical modulation chip 2, a monitoring photodetection chip 3, a receiving photodetection chip 4, a first base 5, a second base 6, a control chip 7, a transimpedance amplifier chip 8, a bottom plate 9, a tube shell 10, a first input optical fiber 11, a second input optical fiber 12 and an output optical fiber 13; a top cavity 52 and a first bottom cavity 53 are sequentially arranged on the first base 5 in the vertical direction from top to bottom, the electro-optical modulation chip 2 and the receiving photodetection chip 4 are bonded to the inside of the top cavity 52, the monitoring photodetection chip 3 is bonded to the top of the electro-optical modulation chip 2, the control chip 7 and the transimpedance amplifier chip 8 are welded to the top of the bottom plate 9, the center of the first input optical fiber 11 is connected to the receiving photodetection chip 4, and the monitoring photodetection chip 3 is bonded to the top of the electro-optical modulation chip 2. The center of the photosensitive surface 41 of the detection chip 4 coincides with the center of the second input optical fiber 12 coincides with the center of the input optical coupling port 21 of the electro-optical modulation chip 2, the input light of the second input optical fiber 12 is incident on the input optical coupling port 21 of the electro-optical modulation chip 2 through end-face coupling, the center of the output optical coupling port 24 of the electro-optical modulation chip 2 coincides with the center of the output optical fiber 13, the output light of the output optical coupling port 24 of the electro-optical modulation chip 2 is incident on the output optical fiber 13 through end-face coupling, the electro-optical modulation chip 2 is electrically connected to the control chip 7, the monitoring photodetection chip 3 is electrically connected to the control chip 7, and the receiving photodetection chip 4 is electrically connected to the transimpedance amplifier chip 8 to realize the bias control closed loop of the electro-optical modulation chip 2.

[0027] Specifically, such as Figure 1 and Figure 3 As shown, the first base 5 is on the top of the second base 6 by low temperature co-firing or welding, the second base 6 is welded to the top of the base plate 9, a tube shell 10 is welded on the upper surface of the base plate 9, and a cavity for accommodating the first base 5 and the second base 6 is provided on the tube shell 10, and a cover plate 1 is welded on the top of the tube shell 10.

[0028] In this embodiment, if Figure 1 As shown, the tube shell 10 is welded to the cover plate 1, the first input optical fiber 11, the second input optical fiber 12, the output optical fiber 13 and the bottom plate 9 to form a closed cavity.

[0029] Specifically, such as Figure 1 and Figure 4 As shown, the first bottom cavity 53 is connected to the top of the second base 6, and a second bottom cavity 67 is provided on the second base 6 in the vertical direction, and the second bottom cavity 67 is connected to the top of the bottom plate 9; a first input optical fiber 11, a second input optical fiber 12 and an output optical fiber 13 are welded to one side of the tube shell 10, and the first input optical fiber 11, the second input optical fiber 12 and the output optical fiber 13 all extend into the cavity of the tube shell 10 and are bonded to the inside of the top cavity 52. ​​The first input optical fiber 11, the second input optical fiber 12 and the output optical fiber 13 are welded to the tube shell 10 for airtight packaging.

[0030] Specifically, such as Figure 1 and Figure 5 As shown, the base plate 9 includes a base plate dielectric 91, a welding belt 92, a base plate surface wiring 93, a base plate metal via 94, and a bottom solder ball 95; a plurality of base plate surface wirings 93 are provided on the upper surface of the base plate dielectric 91, and a plurality of groups of base plate metal vias 94 are arranged in an array on the base plate dielectric 91, and the plurality of groups of base plate metal vias 94 are distributed in a vertical direction, and the bottom ends of the plurality of groups of base plate metal vias 94 are welded with bottom solder balls 95 in a one-to-one correspondence; the base plate surface wiring 93 is used for welding and mounting the second base 6, the control chip 7 and the transimpedance amplifier chip 8, and for signal transmission; the base plate metal vias 94 are used for signal transmission between the second base 6, the control chip 7 and the transimpedance amplifier chip 8, and on the other hand, the base plate metal vias 94 located below the control chip 7 and the transimpedance amplifier chip 8 are used to form a heat dissipation channel.

[0031] In this embodiment, the bottom plate metal vias 94 located below the control chip 7 and the transimpedance amplifier chip 8 form a heat dissipation channel, which can dissipate heat from the control chip 7 and the transimpedance amplifier chip 8 .

[0032] In this embodiment, the bottom plate 9 can be made of high temperature co-fired ceramic, low temperature co-fired ceramic, composite dielectric substrate or a combination thereof. The bottom plate 9 is welded to the tube shell 10 via welding strips 92 to form a sealed cavity.

[0033] Specifically, such as Figure 3 As shown, the first base 5 includes a first base body 51, a top cavity 52, a first bottom cavity 53, a first base surface wiring 54 and a first base metal via 55; the upper surface of the first base body 51 is located on both sides of the top cavity 52 and is provided with multiple groups of first base surface wiring 54, the interior of the first base body 51 is located on both sides of the top cavity 52 and is provided with multiple groups of first base metal vias 55, and the multiple groups of first base metal vias 55 correspond one-to-one to the multiple groups of first base surface wiring 54, and the top of the first base metal via 55 is electrically connected to the first base surface wiring 54.

[0034] In this embodiment, the first base 51 is made of low temperature co-fired ceramic.

[0035] Specifically, such as Figure 4As shown, the second base 6 includes a second base body 61, a second base metal via 62, a second base surface wiring 63, a matching load 64, a bias capacitor 65, a bias inductor 66 and a second bottom cavity 67; the bias capacitor 65 and the bias inductor 66 are welded on the upper surface of the second base body 61, and the bias capacitor 65 and the bias inductor 66 are connected by wire bonding. The bottom solder ball 95 on the bottom plate 9 feeds the bias voltage, which passes through the corresponding bottom plate metal via 94, the second base metal via 62, the second base surface wiring 63, the bias capacitor 65, the bias inductor 66, The first base metal via 55 and the first base surface wiring 54 provide bias voltage to the receiving photodetection chip 4; the matching load 64 welded on the upper surface of the second base body 61 matches the RF output of the receiving photodetection chip 4 through the second base surface wiring 63, the second base metal via 62, the first base metal via 55 and the first base surface wiring 54 in sequence; the second bottom cavity 67 is used to accommodate the control chip 7 and the transimpedance amplifier chip 8, and the multiple second base metal vias 62 and multiple second base surface wirings 63 of the second base 6 are used for signal transmission.

[0036] In this embodiment, the upper surface of the electro-optical modulation chip 2 is flush with the upper surface of the top cavity 52; the interface of the electro-optical modulation chip 2 includes an input optical coupling port 21, an RF input electrode 22, a bias input electrode 23, an output optical coupling port 24, and a monitoring optical coupling port 25; the input optical coupling port 21 and the output optical coupling port 24 are end-face coupling structures for optical coupling between the electro-optical modulation chip 2 and the input light and the output light; the monitoring optical coupling port 25 is an arrayed waveguide grating or an on-chip optical reflection structure for vertical optical coupling between the monitoring lights; the RF input electrode 22 is for loading the RF signal Port, the bias input electrode 23 is the bias voltage loading port; the RF input electrode 22 and the bias input electrode 23 are respectively connected to the first base 5 by wire bonding, and the RF input electrode 22 is divided into two ends, one of which is connected to the external RF signal, and the external RF signal is fed in through the bottom solder ball 95 on the base plate 9, and is sequentially fed into the RF input electrode 22 through the bottom plate metal via 94 corresponding to the bottom solder ball 95, the second base metal via 62, the first base metal via 55 and the first base surface wiring 54 by wire bonding, and the other end is connected to the RF load 26 on the electro-optical modulation chip 2.

[0037] In this embodiment, the interface of the control chip 7 includes a monitoring input port 71, a bias output port 72, a download input port 73 and a status output port 74; the monitoring input port 71, the bias output port 72, the download input port 73 and the status output port 74 are respectively connected to the base plate 9 by wire bonding; the monitoring input port 71 is connected to the monitoring output port 32 of the monitoring photodetection chip 3 by wire bonding through the base plate surface wiring 93, the second base metal via 62, the first base metal via 55 and the first base surface wiring 54 in sequence; the bias output port 72 is connected to the monitoring output port 32 of the monitoring photodetection chip 3 by wire bonding in accordance with the base plate surface wiring 93, the second base metal via 62, the first base metal via 55 and the first base surface wiring 54 in accordance with the base plate surface wiring 93 ... The bias input electrode 23 of the electro-optical modulation chip 2 is wire-bonded through the bottom substrate surface wiring 93, the second base metal via 62, the first base metal via 55 and the first base surface wiring 54; the download input port 73 is connected to the bottom solder ball 95 through the bottom substrate surface wiring 93 and the bottom substrate metal via 94 in turn, and the control program update and download signals are input through the bottom solder ball 95; the status output port 74 is connected to the bottom solder ball 95 through the bottom substrate surface wiring 93 and the bottom substrate metal via 94 in turn, and the status signal of the control chip 7 is output through the bottom solder ball 95.

[0038] In this embodiment, the interface of the transimpedance amplifier chip 8 includes an amplifier input port 81 and an amplifier output port 82. The amplifier input port 81 is electrically connected to the RF output electrode 42 of the receiving photodetection chip 4 through the bottom plate surface wiring 93, the second base metal via 62, the first base metal via 55 and the first base surface wiring 54 in sequence. The RF signal output by the receiving photodetection chip 4 is amplified by the transimpedance amplifier chip 8 and output through the amplifier output port 82, the bottom plate surface wiring 93, the bottom plate metal via 94 and the bottom solder ball 95 in sequence.

[0039] In this embodiment, the interface of the monitoring photodetection chip 3 includes a monitoring optical port 31 and a monitoring output port 32. The monitoring optical port 31 is located on the lower surface of the monitoring photodetection chip 3, and the monitoring output port 32 is located on the upper surface of the monitoring photodetection chip 3; the monitoring optical port 31 of the monitoring photodetection chip 3 coincides with the monitoring optical coupling port 25 of the electro-optical modulation chip 2; the monitoring output port 32 is wire-bonded to the first base 5, and the monitoring output port 32 is wire-bonded to the monitoring input port 71 of the control chip 7 through the first base surface wiring 54, the first base metal via 55, the second base metal via 62 and the bottom plate surface wiring 93 in sequence.

[0040] In this embodiment, the receiving photodetection chip 4 is bonded or welded to the upper surface of the first base 5, and the receiving photodetection chip 4 has a photosensitive surface 41 and a radio frequency output electrode 42; the photosensitive surface 41 is located on the side of the receiving photodetection chip 4, and the radio frequency output electrode 42 is located on the bottom surface of the receiving photodetection chip 4. The radio frequency output electrode 42 is sequentially connected to the bias capacitor 65, the bias inductor 66 and the matching load 64 welded on the upper surface of the second base 6 through the first base surface wiring 54, the first base metal via 55 and the second base surface wiring 63; the radio frequency output electrode 42 of the receiving photodetection chip 4 is sequentially connected to the amplifier input port 81 of the transimpedance amplifier chip 8 through the first base surface wiring 54, the first base metal via 55, the second base metal via 62 and the bottom plate surface wiring 93.

[0041] During the specific operation of the low-heat consumption transceiver module with co-packaged optoelectronic chips in this embodiment, the optoelectronic transceiver signal flow includes the following two aspects:

[0042] 1. Electro-optical modulation reception: The external input RF signal is fed in through the bottom solder ball 95 on the bottom plate 9, and is fed into the RF input electrode 22 through the bottom plate metal via 94, the second base metal via 62, the first base metal via 55 and the first base surface wiring 54 through wire bonding. The second input optical fiber 12 inputs the optical signal through the input optical coupling port 21, and is divided into two paths in the electro-optical modulation chip 2. The two optical signals are electro-optically converted through the RF input electrode 22 of the electro-optical modulation chip 2. After the two optical fields are coherent, they are divided into two outputs. One path is coupled into the output optical fiber 3 through the output optical coupling port 24 of the electro-optical modulation chip 2 for modulated optical signal output, completing the electro-optical modulation reception function; the other path of optical signal loaded with the RF signal is converted into an electrical signal output on the monitoring photodetection chip 3 through the monitoring optical coupling port 25 of the electro-optical modulation chip 2. By controlling the bias voltage of the electro-optical modulator chip 2, the electro-optical modulator chip 2 can be adjusted to different bias operating points, such as the quadrature operating point (Quad+, Quad-), the maximum output point (Peak), and the minimum output point (NULL). Due to the inherent characteristics of the electro-optical modulator chip 2, the operating point of the electro-optical modulator chip 2 will slowly drift with changes in environmental factors such as temperature, causing system indicators such as output optical power and RF signal modulation efficiency to also slowly drift. In actual use, it is necessary to use the control chip 7 to collect the monitoring signal output by the monitoring photodetection chip 3, compare the monitoring signal with the bias operating point setting value, and adjust the voltage of the bias output port 72 of the control chip 7 based on the comparison result to form a closed-loop control, thereby ensuring that the bias operating point of the electro-optical modulator chip 2 is consistent with the program setting value. Commonly used methods for controlling the bias operating point of the electro-optical modulator chip 2 include bias control methods based on scrambling signal monitoring and bias control methods based on output light intensity monitoring. Control chip 7's control program updates and downloads are fed through bottom solder balls 95 of baseboard 9, then transmitted through baseboard metal vias 94 and baseboard surface wiring 93 to download input port 73 of control chip 7. Status output port 74 of control chip 7 is connected to bottom solder balls 95 via baseboard surface wiring 93 and baseboard metal vias 94, and status signals of control chip 7 are output through bottom solder balls 95.

[0043] 2. Photoelectric detection and emission: The optical signal input by the first input optical fiber 11 is converted into photoelectric by the receiving photoelectric detection chip 4, and a radio frequency emission signal is output. The radio frequency signal passes through the first base surface wiring 54, the first base metal via 55, the second base metal via 62, the bottom plate surface wiring 93 and the amplifier input port 81 in sequence, and is input into the transimpedance amplifier chip 8. The radio frequency signal amplified by the transimpedance amplifier chip 8 passes through the amplifier output port 82, the bottom plate surface wiring 93, the bottom plate metal via 94 and the bottom solder ball 95 in sequence, and the amplified radio frequency emission signal is output, completing the photoelectric detection and emission function.

[0044] The above description is only a preferred specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any technician familiar with the technical field, within the technical scope disclosed by the present invention, who makes equivalent replacements or changes based on the technical solution and inventive concept of the present invention, should be covered by the scope of protection of the present invention.

Claims

1. A low-heat-consumption transceiver module with co-packaged optoelectronic chips, characterized in that: include: A cover plate (1), an electro-optical modulation chip (2), a monitoring photoelectric detection chip (3), a receiving photoelectric detection chip (4), a first base (5), a second base (6), a control chip (7), a transimpedance amplifier chip (8), a base plate (9), a tube shell (10), a first input optical fiber (11), a second input optical fiber (12) and an output optical fiber (13); a top cavity (52) and a first bottom cavity (53) are sequentially arranged on the first base (5) from top to bottom in a vertical direction, the electro-optical modulation chip (2) and the receiving photoelectric detection chip (4) are bonded inside the top cavity (52), the monitoring photoelectric detection chip (3) is bonded to the top of the electro-optical modulation chip (2), the control chip (7) and the transimpedance amplifier chip (8) are welded to the top of the base plate (9), the center of the first input optical fiber (11) and the optical fiber of the receiving photoelectric detection chip (4) are connected. The center of the sensitive surface (41) coincides with the center of the second input optical fiber (12) and the center of the input optical coupling port (21) of the electro-optical modulation chip (2); the input light of the second input optical fiber (12) is incident on the input optical coupling port (21) of the electro-optical modulation chip (2) through end-face coupling; the center of the output optical coupling port (24) of the electro-optical modulation chip (2) coincides with the center of the output optical fiber (13); the output light of the output optical coupling port (24) of the electro-optical modulation chip (2) is incident on the output optical fiber (13) through end-face coupling; the electro-optical modulation chip (2) is electrically connected to the control chip (7); the monitoring photodetection chip (3) is electrically connected to the control chip (7); and the receiving photodetection chip (4) is electrically connected to the transimpedance amplifier chip (8), so as to realize the bias control closed loop of the electro-optical modulation chip (2).

2. The low heat dissipation transceiver module with optoelectronic chips co-packaged according to claim 1, characterized in that: The first base (5) is co-fired or welded at low temperature on the top of the second base (6), the second base (6) is welded to the top of the bottom plate (9), a tube shell (10) is welded on the upper surface of the bottom plate (9), and a chamber capable of accommodating the first base (5) and the second base (6) is provided on the tube shell (10), and a cover plate (1) is welded on the top of the tube shell (10).

3. The low heat dissipation transceiver module with optoelectronic chip co-packaged according to claim 1, characterized in that: The first bottom cavity (53) is communicated with the top of the second base (6); a second bottom cavity (67) is provided on the second base (6) in a vertical direction, and the second bottom cavity (67) is communicated with the top of the bottom plate (9); a first input optical fiber (11), a second input optical fiber (12), and an output optical fiber (13) are welded on one side of the tube shell (10); the first input optical fiber (11), the second input optical fiber (12), and the output optical fiber (13) all extend into the cavity of the tube shell (10) and are bonded to the inside of the top cavity (52); the first input optical fiber (11), the second input optical fiber (12), and the output optical fiber (13) are welded to the tube shell (10) for sealed packaging.

4. The low heat dissipation transceiver module with co-packaged optoelectronic chips according to claim 3, characterized in that: The base plate (9) comprises a base plate medium (91), a welding strip (92), a base plate surface wiring (93), a base plate metal via (94), and a bottom solder ball (95); a plurality of base plate surface wirings (93) are provided on the upper surface of the base plate medium (91); a plurality of groups of base plate metal vias (94) are arranged in an array on the base plate medium (91), and the plurality of groups of base plate metal vias (94) are distributed in a vertical direction; the bottom ends of the plurality of groups of base plate metal vias (94) are welded with bottom solder balls (95) in a one-to-one correspondence; the base plate surface wiring (93) is used for welding and mounting the second base (6), the control chip (7), and the transimpedance amplifier chip (8) and for signal transmission; the base plate metal via (94) is used for signal transmission between the second base (6), the control chip (7), and the transimpedance amplifier chip (8); and the base plate metal via (94) located below the control chip (7) and the transimpedance amplifier chip (8) is used to form a heat dissipation channel.

5. The low heat dissipation transceiver module with co-packaged optoelectronic chips according to claim 4, characterized in that: The first base (5) comprises a first base body (51), a top cavity (52), a first bottom cavity (53), a first base surface wiring (54) and a first base metal via (55); the upper surface of the first base body (51) is located on both sides of the top cavity (52) and is provided with multiple groups of first base surface wiring (54); the interior of the first base body (51) is located on both sides of the top cavity (52) and is provided with multiple groups of first base metal vias (55), and the multiple groups of first base metal vias (55) correspond one-to-one to the multiple groups of first base surface wiring (54), and the tops of the first base metal vias (55) are electrically connected to the first base surface wiring (54).

6. The low heat dissipation transceiver module with optoelectronic chips co-packaged according to claim 5, characterized in that: The second base (6) includes a second base body (61), a second base metal via (62), a second base surface wiring (63), a matching load (64), a bias capacitor (65), a bias inductor (66) and a second bottom cavity (67); a bias capacitor (65) and a bias inductor (66) are welded on the upper surface of the second base body (61), the bias capacitor (65) and the bias inductor (66) are connected by wire bonding, and a bottom solder ball (95) on the bottom plate (9) feeds a bias voltage, which sequentially passes through the corresponding bottom plate metal via (94), the second base metal via (62), the second base surface wiring (63), the bias capacitor (65), the bias inductor (66), the first base metal via (55) and the first base surface wiring (54) to provide a bias voltage to the receiving photodetection chip (4); The matching load (64) welded on the upper surface of the second base body (61) sequentially passes through the second base surface wiring (63), the second base metal via (62), the first base metal via (55) and the first base surface wiring (54) to match the radio frequency output of the receiving photodetection chip (4); the second bottom cavity (67) is used to accommodate the control chip (7) and the transimpedance amplifier chip (8), and the multiple second base metal vias (62) and the multiple second base surface wiring (63) of the second base (6) are used for signal transmission.

7. The low heat dissipation transceiver module with optoelectronic chips co-packaged according to claim 6, characterized in that: The upper surface of the electro-optical modulation chip (2) is flush with the upper surface of the top cavity (52); the interface of the electro-optical modulation chip (2) includes an input optical coupling port (21), a radio frequency input electrode (22), a bias input electrode (23), an output optical coupling port (24) and a monitoring optical coupling port (25); the input optical coupling port (21) and the output optical coupling port (24) are end-face coupling structures for optical coupling between the electro-optical modulation chip (2) and the input light and the output light; the monitoring optical coupling port (25) is an arrayed waveguide grating or an on-chip optical reflection structure for optical vertical coupling between monitoring lights; the radio frequency input electrode (22) is a radio frequency signal loading port, the bias input electrode (23) is a bias input electrode (24), an output optical coupling port (24) and a monitoring optical coupling port (25); the input optical coupling port (21) and the output optical coupling port (24) are end-face coupling structures for optical coupling between the electro-optical modulation chip (2) and the input light and the output light; the monitoring optical coupling port (25) is an arrayed waveguide grating or an on-chip optical reflection structure for optical vertical coupling between monitoring lights; the radio frequency input electrode (22) is a radio frequency signal loading port, and the bias input electrode (23) is a bias input electrode (24) and a monitoring optical coupling port (25 ... The input electrode (23) is a bias voltage loading port; the radio frequency input electrode (22) and the bias input electrode (23) are respectively connected to the first base (5) by wire bonding; the radio frequency input electrode (22) is divided into two ends, one end of which is connected to an external radio frequency signal, and the external radio frequency signal is fed in through a bottom solder ball (95) on the bottom plate (9), and is fed into the radio frequency input electrode (22) through a bottom plate metal via (94) corresponding to the bottom solder ball (95), a second base metal via (62), a first base metal via (55) and a first base surface wiring (54) by wire bonding in sequence; and the other end is connected to a radio frequency load (26) on the electro-optical modulation chip (2).

8. The low heat dissipation transceiver module with optoelectronic chips co-packaged according to claim 6, characterized in that: The interface of the control chip (7) includes a monitoring input port (71), a bias output port (72), a download input port (73) and a status output port (74); the monitoring input port (71), the bias output port (72), the download input port (73) and the status output port (74) are respectively connected to the base plate (9) by wire bonding; the monitoring input port (71) is connected to the monitoring output port (32) of the monitoring photoelectric detection chip (3) by wire bonding in sequence through the base plate surface wiring (93), the second base metal via (62), the first base metal via (55) and the first base surface wiring (54); the bias output port (72) is connected to the monitoring output port (32) of the monitoring photoelectric detection chip (3) by wire bonding in sequence through the base plate surface wiring (93), the second base metal via (62), the first base metal via (55) and the first base surface wiring (54); The bias input electrode (23) of the electro-optical modulation chip (2) is wire-bonded through the bottom plate surface wiring (93), the second base metal via (62), the first base metal via (55) and the first base surface wiring (54); the download input port (73) is connected to the bottom solder ball (95) in sequence through the bottom plate surface wiring (93) and the bottom plate metal via (94), and the control program update and download signals are input through the bottom solder ball (95); the status output port (74) is connected to the bottom solder ball (95) in sequence through the bottom plate surface wiring (93) and the bottom plate metal via (94), and the status signal of the control chip (7) is output through the bottom solder ball (95).

9. The low heat dissipation transceiver module with optoelectronic chips co-packaged according to claim 6, characterized in that: The interface of the transimpedance amplifier chip (8) includes an amplifier input port (81) and an amplifier output port (82). The amplifier input port (81) is electrically connected to the radio frequency output electrode (42) of the receiving photodetection chip (4) through the bottom plate surface wiring (93), the second base metal via (62), the first base metal via (55) and the first base surface wiring (54) in sequence, and receives the radio frequency signal output by the photodetection chip (4). After amplification by the transimpedance amplifier chip (8), the signal is output through the amplifier output port (82), the bottom plate surface wiring (93), the bottom plate metal via (94) and the bottom solder ball (95) in sequence.

10. The low heat dissipation transceiver module with co-packaged optoelectronic chips according to claim 6, characterized in that: The monitoring photoelectric detection chip (3) interface includes a monitoring optical port (31) and a monitoring output port (32), wherein the monitoring optical port (31) is located on the lower surface of the monitoring photoelectric detection chip (3), and the monitoring output port (32) is located on the upper surface of the monitoring photoelectric detection chip (3); The monitoring optical port (31) of the monitoring photodetection chip (3) overlaps with the monitoring optical coupling port (25) of the electro-optical modulation chip (2); the monitoring output port (32) is wire-bonded to the first base (5); the monitoring output port (32) is wire-bonded to the monitoring input port (71) of the control chip (7) in sequence through the first base surface wiring (54), the first base metal via (55), the second base metal via (62) and the bottom plate surface wiring (93); The receiving photodetection chip (4) is bonded or welded to the upper surface of the first base (5), and the receiving photodetection chip (4) has a photosensitive surface (41) and a radio frequency output electrode (42); the photosensitive surface (41) is located on the side of the receiving photodetection chip (4), and the radio frequency output electrode (42) is located on the bottom surface of the receiving photodetection chip (4); the radio frequency output electrode (42) is sequentially connected to the bias capacitor (65), the bias inductor (66) and the matching load (64) welded on the upper surface of the second base (6) through the first base surface wiring (54), the first base metal via (55) and the second base surface wiring (63) by wire bonding; the radio frequency output electrode (42) of the receiving photodetection chip (4) is sequentially connected to the amplification input port (81) of the transimpedance amplifier chip (8) through the first base surface wiring (54), the first base metal via (55), the second base metal via (62) and the bottom plate surface wiring (93) by wire bonding.

Images