Film-like adhesive, dicing die-bonded film, and semiconductor device and method for manufacturing same

Abstract

The invention discloses a film-like adhesive containing a thermosetting resin component and an elastomer. In a DSC curve of the film-like adhesive obtained by performing differential scanning calorimetry under the conditions of a temperature rise rate of 10 DEG C / min and a measurement temperature range of 30-300 DEG C, the starting temperature of an exothermic peak observed in the DSC curve is 165 DEG C or less, the peak temperature is 185 DEG C or less, and the calorific value is 90 J / g or more.

Description

Technical Field

[0001] The present invention relates to a film adhesive, a dicing / die-bonding integrated film, a semiconductor device and a manufacturing method thereof. Background Art

[0002] In recent years, stacked MCP (Multi Chip Package) in which semiconductor chips are stacked in multiple stages has become popular and is used as memory semiconductor packages for mobile phones and portable audio devices. In addition, with the multifunctionality of mobile phones, the speed, density, and integration of semiconductor packages are also being promoted.

[0003] As a method for manufacturing a semiconductor device, a dicing die bonding integrated film having an adhesive layer and a pressure-sensitive adhesive layer is generally used, and then the semiconductor wafer, the adhesive layer, and a part of the pressure-sensitive adhesive layer are cut to separate them into pieces (a semiconductor wafer back-side bonding method). For example, patent documents 1 and 2 disclose film-like adhesives used for the adhesive layer in this method.

[0004] Previous technical literature

[0005] Patent Literature

[0006] Patent Document 1: International Publication No. 2013 / 133275

[0007] Patent Document 2: International Publication No. 2020 / 013250 Summary of the invention

[0008] Technical issues to be solved by the invention

[0009] In recent years, in semiconductor packages, in semiconductor chips composed of a circuit layer and a semiconductor layer, there is a tendency for the circuit layer to become thicker and the semiconductor layer to become thinner. In such semiconductor packages, for example, when the semiconductor chip is connected using wire bonding, chip cracking sometimes occurs. It is speculated that such chip cracking is caused by the vibration during wire bonding due to the thinning of the semiconductor layer and the brittleness of the semiconductor chip. Therefore, it is required that the film adhesive used for cutting the die bonding integrated film can suppress the occurrence of chip cracking.

[0010] In addition, in recent years, research has been conducted on lowering the curing temperature and shortening the curing time of film adhesives. Film adhesives used for cutting die bonding integrated films are also required to be fully cured under low temperature and short time heating conditions (for example, 140°C, 30 minutes).

[0011] Therefore, a main object of the present invention is to provide a film-like adhesive that can sufficiently suppress the occurrence of chip cracks even when cured under low-temperature and short-time heating conditions.

[0012] Means for solving technical problems

[0013] The present inventors conducted intensive research to solve the above-mentioned problems and found that, by making the starting temperature, peak temperature and calorific value of the exothermic peak observed in the DSC curve of the film adhesive obtained by differential scanning calorimetry under specified conditions within a specified range, the storage modulus of the cured film adhesive can be increased even when cured under low-temperature and short-time heating conditions, thereby suppressing the occurrence of chip cracking, thereby completing the invention of the present invention.

[0014] The present invention provides the film adhesive described in [1] to [8], the dicing die bonding integrated film described in [9], the semiconductor devices described in

[10] and

[11] , and the method for manufacturing the semiconductor devices described in

[12] to

[17] .

[0015] [1] A film-like adhesive comprising a thermosetting resin component and an elastomer, wherein:

[0016] In the DSC curve of the film adhesive obtained by differential scanning calorimetry under the conditions of a heating rate of 10°C / min and a measurement temperature range of 30 to 300°C, the starting temperature of the exothermic peak observed in the DSC curve is below 165°C, the peak temperature is below 185°C, and the calorific value is above 90 J / g.

[0017] [2] The film adhesive according to [1] may further contain an inorganic filler, wherein:

[0018] The content of the inorganic filler is 0 to 25% by mass based on the total amount of the film adhesive.

[0019] [3] The film-like adhesive according to [1] or [2], wherein:

[0020] The thermosetting resin component includes epoxy resin.

[0021] [4] The film-like adhesive according to [3], wherein:

[0022] The thermosetting resin component further comprises a phenolic resin.

[0023] [5] The film-like adhesive according to any one of [1] to [4], wherein

[0024] The film adhesive has a thickness of 1 to 15 μm.

[0025] [6] The film-like adhesive according to any one of [1] to [5], wherein

[0026] The storage elastic modulus of a cured product after curing the film adhesive at 140° C. for 30 minutes is 80 MPa or more at 150° C.

[0027] [7] The film adhesive according to any one of [1] to [6], which is used in a process for manufacturing a semiconductor device in which a plurality of semiconductor chips are stacked.

[0028] [8] The film-like adhesive according to [7], wherein:

[0029] The semiconductor device is a three-dimensional NAND memory.

[0030] [9] A dicing die bonding integrated film comprising, in this order, a substrate layer, a pressure-sensitive adhesive layer, and an adhesive layer formed of the film-like adhesive described in any one of [1] to [6].

[0031]

[10] A semiconductor device comprising:

[0032] 1st semiconductor chip;

[0033] a supporting member for mounting the first semiconductor chip; and

[0034] The cured product of the film adhesive according to any one of [1] to [6] is provided between the first semiconductor chip and the support member to bond the first semiconductor chip and the support member.

[0035]

[11] The semiconductor device according to

[10] , further comprising a second semiconductor chip that is stacked on the surface of the first semiconductor chip and is different from the first semiconductor chip.

[0036]

[12] A method for manufacturing a semiconductor device, comprising the following steps:

[0037] Attaching the adhesive layer of the dicing die bonding integrated film described in [9] to a semiconductor wafer;

[0038] Manufacturing a plurality of semiconductor chips with adhesive sheets by dicing the semiconductor wafer with the adhesive layer attached thereto; and

[0039] A first semiconductor chip with an adhesive sheet as the semiconductor chip with an adhesive sheet having a first semiconductor chip and the first adhesive sheet is bonded to a supporting member via a first adhesive sheet.

[0040]

[13] The method for manufacturing a semiconductor device according to

[12] , further comprising the following steps:

[0041] Thermally curing the first adhesive sheet in the first semiconductor chip with an adhesive sheet under the conditions of 100 to 180° C. for 15 to 60 minutes; and

[0042] The first semiconductor chip and the supporting member are electrically connected by bonding wires.

[0043]

[14] The method for manufacturing a semiconductor device according to

[12] , further comprising the following steps:

[0044] A second semiconductor chip with an adhesive sheet having a second semiconductor chip and the second adhesive sheet as the semiconductor chip with an adhesive sheet is bonded to the surface of the first semiconductor chip among the first semiconductor chips with an adhesive sheet bonded to the supporting member via a second adhesive sheet.

[0045]

[15] The method for manufacturing a semiconductor device according to

[14] , further comprising the following steps:

[0046] Thermally curing the first adhesive sheet in the first semiconductor chip with an adhesive sheet and the second adhesive sheet in the second semiconductor chip with an adhesive sheet under the conditions of 100 to 180° C. for 15 to 60 minutes; and

[0047] The first semiconductor chip and the second semiconductor chip are electrically connected to the support member by bonding wires.

[0048]

[16] A method for manufacturing a semiconductor device, comprising the following steps:

[0049] The film adhesive according to claim 1 or 2 is interposed between the first semiconductor chip and a supporting member or between the first semiconductor chip and a second semiconductor chip different from the first semiconductor chip, thereby bonding the first semiconductor chip to the supporting member or the first semiconductor chip to the second semiconductor chip.

[0050]

[17] The method for manufacturing a semiconductor device according to

[16] , further comprising the following steps:

[0051] Thermally curing the film adhesive at 100 to 180° C. for 15 to 60 minutes; and

[0052] The first semiconductor chip and the second semiconductor chip are electrically connected to the support member by bonding wires.

[0053] Effects of the Invention

[0054] According to the present invention, a film adhesive is provided that can fully suppress chip cracking even when cured under low temperature and short time heating conditions. In addition, according to the present invention, a dicing die bonding integrated film using such a film adhesive, and a semiconductor device and a method for manufacturing the same are provided. In addition, according to the present invention, a method for manufacturing a semiconductor device using such a dicing die bonding integrated film is provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0055] Figure 1 It is a schematic cross-sectional view showing one embodiment of the film-like adhesive.

[0056] Figure 2 This is a schematic diagram showing a method for determining the onset temperature and peak temperature of an exothermic peak from a DSC curve.

[0057] Figure 3 This is a schematic diagram showing a method for determining the calorific value of an exothermic peak from a DSC curve.

[0058] Figure 4 It is a schematic cross-sectional view showing one embodiment of a dicing die bonding integrated film.

[0059] Figure 5 It is a schematic cross-sectional view showing one embodiment of a semiconductor device.

[0060] Figure 6 It is a schematic cross-sectional view showing another embodiment of a semiconductor device.

[0061] Figure 7 It is a schematic cross-sectional view showing another embodiment of a semiconductor device. DETAILED DESCRIPTION

[0062] Hereinafter, the embodiments of the present invention will be described with reference to the accompanying drawings as appropriate. However, the present invention is not limited to the following embodiments. In the following embodiments, except for the cases specifically indicated, the constituent elements (including steps, etc.) are not essential. The sizes of the constituent elements in each figure are conceptual sizes, and the relative relationship between the sizes of the constituent elements is not limited to the relationship shown in each figure.

[0063] The same is true for the numerical value and its range in the present invention, and the present invention is not limited. In this specification, the numerical range represented by "~" represents the range in which the numerical values ​​before and after "~" are respectively included as the minimum value and the maximum value. In the numerical range recorded in stages in this specification, the upper limit or lower limit recorded in one numerical range can also be replaced by the upper limit or lower limit of the numerical range recorded in other stages. And, in the numerical range recorded in this specification, the upper limit or lower limit of the numerical range can also be replaced by the value shown in the embodiment. And, the upper limit and lower limit recorded separately can be combined arbitrarily. And, "A or B" includes either A and B, and both can be included. And, the materials exemplified below can be used alone as long as they are not particularly specified, or can be used in combination of more than two. When there are a variety of substances belonging to each component in the composition, as long as there is no special description, the content of each component in the composition refers to the total amount of the multiple substances present in the composition.

[0064] In the present specification, (meth)acrylate refers to acrylate or its corresponding methacrylate. The same applies to other similar expressions such as (meth)acryloyl, (meth)acrylic copolymer, etc.

[0065] [Film Adhesive]

[0066] Figure 1 It is a schematic cross-sectional view showing one embodiment of the film-like adhesive. Figure 1 The film-like adhesive 1 (adhesive film) shown may be thermosetting, or may be an adhesive that passes through a semi-cured (B stage) state and can become a completely cured (C stage) state after a curing treatment.

[0067] The film adhesive 1 contains a thermosetting resin component (hereinafter, sometimes referred to as "component (A)") and an elastomer (hereinafter, sometimes referred to as "component (B)"), and may further contain an inorganic filler (hereinafter, sometimes referred to as "component (C)". The (A) component may include, for example, an epoxy resin (hereinafter, sometimes referred to as "component (A1)") and a phenolic resin (hereinafter, sometimes referred to as "component (A2)".). In addition to the (A) component, the (B) component and the (C) component, the film adhesive 1 may further contain a coupling agent (hereinafter, sometimes referred to as "component (D)"), a curing accelerator (hereinafter, sometimes referred to as "component (E)") and other components.

[0068] Film adhesive 1 is a film adhesive having a DSC curve obtained by differential scanning calorimetry (DSC) under the conditions of a heating rate of 10°C / min and a measurement temperature range of 30 to 300°C, in which the starting temperature of the exothermic peak observed in the DSC curve is 165°C or less, the peak temperature is 185°C or less, and the calorific value is 90 J / g or more. In addition, in the DSC curve, there are sometimes multiple exothermic peaks. In this case, the exothermic peak to be targeted may be an exothermic peak indicating the maximum heat generation.

[0069] In this specification, differential scanning calorimetry is performed by heating the sample in air or nitrogen atmosphere at a temperature of 30 to 300° C., with the sample amount of the film adhesive 1 being 10±0.5 mg, the heating rate being 10° C. / min, and the measurement temperature range being 10 to 300° C.

[0070] Conventional film adhesives usually have an exothermic peak in the temperature range of 30 to 300°C of the DSC curve. It is speculated that the heat generated in this temperature range is generated by the curing reaction of the thermosetting resin component (for example, the reaction of epoxy resin and phenolic resin). Regarding the film adhesive of this embodiment, since the starting temperature of the exothermic peak is below 165°C, the peak temperature is below 185°C, and the calorific value is above 90 J / g, even when cured under low temperature and short-time heating conditions, the storage modulus of the cured product of the film adhesive can be increased, thereby suppressing the occurrence of chip cracking.

[0071] Figure 2 This is a schematic diagram showing a method for determining the onset temperature and peak temperature of an exothermic peak from a DSC curve. Figure 2 The DSC curve shown includes a base line L0 and an exothermic peak P observed in the middle of the base line L0 due to the curing reaction of the film adhesive 1 in the temperature range of 30 to 300° C. The temperature T1 of the intersection of the extension line L1 of the base line L0 below the exothermic peak P and the tangent line L2 of the DSC curve at the point where the DSC curve shows the maximum slope at the exothermic peak P is the starting temperature. In addition, the temperature T2 of the maximum point in the exothermic peak P is the peak temperature.

[0072] The starting temperature of the exothermic peak is 165°C or less, for example, 160°C or 155°C or less. If the starting temperature of the exothermic peak is 165°C or less, the film adhesive can be cured under low temperature and short time heating conditions. The starting temperature of the exothermic peak can be, for example, 100°C or more, 110°C or more, or 120°C or more.

[0073] The peak temperature of the exothermic peak is 185°C or less, for example, 180°C or less or 175°C or less. If the peak temperature of the exothermic peak is 185°C or less, the curing reaction of the film adhesive is sufficiently carried out under low temperature and short time heating conditions, and the desired storage modulus tends to be easily obtained. The peak temperature of the exothermic peak may be, for example, 140°C or more, 150°C or more, or 160°C or more.

[0074] The difference between the peak temperature of the exothermic peak and the starting temperature may be, for example, 45°C or less, 40°C or less, 35°C or less, 30°C or less, 25°C or less, or 20°C or less. If the difference between the peak temperature of the exothermic peak and the starting temperature is within such a range, the curing reaction of the film adhesive is sufficiently carried out under low temperature and short time heating conditions, and the desired storage modulus tends to be easily obtained. The difference between the peak temperature of the exothermic peak and the starting temperature may be, for example, 5°C or more or 10°C or more.

[0075] The onset temperature and peak temperature of the exothermic peak can be lowered by, for example, increasing the content of the component (E) in the film adhesive, changing the component (E) to a component that acts at a lower temperature, increasing the content of the component (A) in the film adhesive, etc.

[0076] Figure 3 This is a schematic diagram showing a method for determining the calorific value of an exothermic peak from a DSC curve. Figure 3 The DSC curve shown is Figure 2 The DSC curves are the same as shown. Figure 3 As shown, the calorific value Q is calculated by integrating the peak area of ​​the exothermic peak P (the area of ​​a region surrounded by the exothermic peak P and the extension line L1 of the base line L0).

[0077] The calorific value of the exothermic peak is 90 J / g or more, for example, it can also be 95 J / g or more, 100 J / g or more, 105 J / g or more, 110 J / g or more, 115 J / g or more, 120 J / g or more, 125 J / g or more, or 130 J / g or more. If the calorific value of the exothermic peak is 90 J / g or more, the reaction rate of the curing reaction of the film adhesive can be fully improved under low temperature and short time heating conditions. The calorific value of the exothermic peak can be, for example, 250 J / g or less or 200 J / g or less.

[0078] The calorific value of the exothermic peak can be increased, for example, by increasing the content of the component (A) in the film adhesive, using a component with a smaller epoxy equivalent as the component (A1) of the component (A), increasing the ratio of the epoxy equivalent of the component (A1) to the hydroxyl equivalent of the component (A2) (epoxy equivalent of the component (A1) / hydroxyl equivalent of the component (A2)), etc.

[0079] The following describes the components constituting the film adhesive of the present embodiment. By using the components shown below, it tends to be easy to produce a film adhesive that satisfies the above-mentioned conditions of the starting temperature, peak temperature and heat generation of the exothermic peak.

[0080] (A) Component: Thermosetting resin component

[0081] (A1) Component: Epoxy resin

[0082] As long as the component (A1) is a resin having an epoxy group in the molecule, it can be used without particular limitation. Examples of the component (A1) include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, phenol novolac epoxy resin, cresol novolac epoxy resin, bisphenol A novolac epoxy resin, bisphenol F novolac epoxy resin, stilbene epoxy resin, epoxy resin containing a triazine skeleton, epoxy resin containing a fluorene skeleton, trisphenol methane epoxy resin, biphenyl epoxy resin, xylylene epoxy resin, biphenylaralkyl epoxy resin, naphthalene epoxy resin, diglycidyl ether compounds of polycyclic aromatics such as polyfunctional phenols and anthracene, etc. Among these, component (A1) may include cresol novolac epoxy resin, bisphenol F epoxy resin or bisphenol A epoxy resin from the viewpoint of film viscosity and flexibility. Bisphenol F epoxy resin has a relatively low softening point, which is often 40° C. or lower.

[0083] The component (A1) may include an epoxy resin having a softening point of 40°C or less (or an epoxy resin that is liquid at 30°C, hereinafter sometimes referred to as "component (A1a)"). The component (A1) may be a combination of the component (A1a) and an epoxy resin having a softening point exceeding 40°C (or an epoxy resin that is solid at 30°C, hereinafter sometimes referred to as "component (A1b)"). By including the component (A1a), the component (A1) tends to more easily increase the storage modulus after curing. Furthermore, by having the component (A1) be a combination of the component (A1a) and the component (A1b), it tends to be easier to achieve thin film formation.

[0084] In addition, in this specification, the softening point means the value measured by the spherical method according to JIS K7234:1986.

[0085] Examples of commercially available products of the component (A1a) include EXA-830CRP (trade name, manufactured by DIC Corporation, liquid at 30°C), YDF-8170C (trade name, manufactured by NIPPON STEEL Chemical & Material Co., Ltd., liquid at 30°C), and EP-4088S (trade name, manufactured by ADEKA Corporation, liquid at 30°C).

[0086] When the component (A1) is a combination of the component (A1a) and the component (A1b), the content of the component (A1a) may be 5% by mass or more, 10% by mass or more, or 15% by mass or more, and may be 80% by mass or less, 70% by mass or less, or 65% by mass or less, based on the total amount of the component (A1). In addition, the content of the component (A1a) in the component (A1) in the adhesive composition when forming a film-like adhesive may be the same as the above range.

[0087] When the component (A1) is a combination of the component (A1a) and the component (A1b), the content of the component (A1b) may be 20% by mass or more, 30% by mass or more, or 35% by mass or more, and may be 95% by mass or less, 90% by mass or less, or 85% by mass or less, based on the total amount of the component (A1). In addition, the content of the component (A1b) in the component (A1) in the adhesive composition when forming a film-like adhesive may be the same as the above range.

[0088] The epoxy equivalent of the component (A1) is not particularly limited and may be 90 to 300 g / eq or 110 to 290 g / eq. If the epoxy equivalent of the component (A1) is within such a range, the bulk strength of the film adhesive is maintained and the fluidity of the adhesive composition when the film adhesive is formed tends to be easily ensured.

[0089] (A2) Component: Phenolic resin

[0090] The component (A2) may be a component that functions as a curing agent for the component (A1), that is, a curing agent for epoxy resin. When the film adhesive contains the component (A2), the film adhesive is highly cross-linked, thereby increasing the storage modulus after curing.

[0091] As long as the component (A2) is a resin having a phenolic hydroxyl group in the molecule, it can be used without particular limitation. As long as the component (A2) is a resin having a phenolic hydroxyl group in the molecule, it is not particularly limited. As the component (A2), for example, phenol, cresol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol, aminophenol and other phenols and / or naphthols such as α-naphthol, β-naphthol, dihydroxynaphthalene and compounds having aldehyde groups such as formaldehyde are condensed or co-condensed under an acidic catalyst to obtain a novolac type phenolic resin; phenol aralkyl resin synthesized from phenols and / or naphthols such as allylated bisphenol A, allylated bisphenol F, allylated naphthalene diol, phenol novolac, phenol and dimethoxy-p-xylene or bis(methoxymethyl)biphenyl; naphthol aralkyl resin; biphenyl aralkyl type phenolic resin; phenyl aralkyl type phenolic resin, etc. Among these, the phenol resin may contain a novolac type phenol resin or a phenylaralkyl type phenol resin.

[0092] The hydroxyl equivalent of component (A2) may be 70 g / eq or more or 70 to 300 g / eq. When the hydroxyl equivalent of component (A2) is 70 g / eq or more, the storage modulus tends to be further improved, and when it is 300 g / eq or less, it is possible to prevent the occurrence of defects such as foaming and degassing.

[0093] The softening point of the component (A2) is not particularly limited, and may be, for example, 90° C. or higher, 100° C. or higher, or 110° C. or higher. The upper limit of the softening point of the component (A2) may be, for example, 200° C. or lower.

[0094] Examples of commercially available products of the component (A2) include PSM-4326 (trade name, manufactured by Gunei Chemical Industry Co., Ltd., softening point: 120° C.), J-DPP-140 (trade name, manufactured by JFE Chemical Corporation, softening point: 140° C.), and GPH-103 (trade name, manufactured by Nippon Kayaku Co., Ltd., softening point: 99 to 106° C.).

[0095] From the viewpoint of curability, the ratio of the epoxy equivalent of component (A1) to the hydroxy equivalent of component (A2) (epoxy equivalent of component (A1) / hydroxy equivalent of component (A2)) may be 0.30 / 0.70 to 0.70 / 0.30, 0.35 / 0.65 to 0.65 / 0.35, 0.40 / 0.60 to 0.60 / 0.40, or 0.45 / 0.55 to 0.55 / 0.45. When the equivalent ratio is 0.30 / 0.70 or more, there is a tendency to obtain more sufficient curability. When the equivalent ratio is 0.70 / 0.30 or less, the viscosity can be prevented from becoming too high, and more sufficient fluidity can be obtained.

[0096] Based on the total amount of the film-like adhesive, the content of component (A1) (the total of component (A1a) and component (A1b)) can be 20% by mass or more, or 22% by mass or more, 25% by mass or more, 28% by mass or more, 30% by mass or more, 32% by mass or more, 35% by mass or more, 38% by mass or more, or 40% by mass or more. If the content of component (A1) is within such a range, it tends to be easier to increase the storage modulus after curing. From the perspective of operability, based on the total amount of the film-like adhesive, the content of component (A1) can be 50% by mass or less, 48% by mass or less, or 45% by mass or less. In addition, the content of component (A1) (the total of component (A1a) and component (A1b)) in the adhesive composition when forming a film-like adhesive can be the same as the above range.

[0097] Based on the total amount of the film-like adhesive, the content of (A2) component can be 10% by mass or more, or 12% by mass or more, 15% by mass or more, 18% by mass or more, 20% by mass or more, 22% by mass or more, or 25% by mass or more. If the content of (A2) component is within such a range, it is easier to improve the storage modulus after curing. From the viewpoint of operability, based on the total amount of the film-like adhesive, the content of (A2) component can be 35% by mass or less, 32% by mass or less, or 30% by mass or less. In addition, the content of (A2) component in the adhesive composition when forming the film-like adhesive can be the same as the above range.

[0098] Based on the total amount of the film-like adhesive, the content of component (A) (the total of component (A1) and component (A2)) can be 35% by mass or more, or 38% by mass or more, 40% by mass or more, 42% by mass or more, 45% by mass or more, 48% by mass or more, 50% by mass or more, 52% by mass or more, 55% by mass or more, 58% by mass or more, 60% by mass or more, 62% by mass or more, or 65% by mass or more. If the content of component (A) is within such a range, it tends to be easier to increase the storage modulus after curing. From the perspective of operability, based on the total amount of the film-like adhesive, the content of component (A) can be 80% by mass or less, 75% by mass or less, or 70% by mass or less. In addition, the content of component (A) (the total of component (A1) and component (A2)) in the adhesive composition when forming the film-like adhesive can be the same as the above range.

[0099] (B) Component: Elastomer

[0100] As the (B) component, for example, acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, butadiene resin; modified bodies of these resins, etc. can be cited. In addition, as the (B) component, for example, a polymer having an organopolysiloxane in the side chain can be cited. Among these, the (B) component has fewer ionic impurities and better heat resistance, which makes it easier to ensure the connection reliability of the semiconductor device and has better fluidity. Therefore, it can also be an acrylic resin (acrylic rubber) having a constituent unit derived from (meth) acrylate as the main component. Based on the total amount of constituent units, the content of the constituent unit derived from (meth) acrylate in the (B) component can be, for example, 70% by mass or more, 80% by mass or more, or 90% by mass or more. The acrylic resin (acrylic rubber) can contain constituent units derived from (meth) acrylate having crosslinking functional groups such as epoxy groups, alcoholic or phenolic hydroxyl groups, and carboxyl groups.

[0101] The glass transition temperature (Tg) of the (B) component may be 0 to 30°C. When the Tg of the (B) component is 0°C or higher, the adhesive strength of the film adhesive can be further improved, and the flexibility of the film adhesive can be prevented from becoming too high. If the Tg of the (B) component is 30°C or lower, the decrease in the flexibility of the film adhesive can be suppressed, thereby having an excellent breaking strength when forming a thin film and a tendency to be excellent in processability. The glass transition temperature (Tg) of the (B) component may be 5°C or higher or 10°C or higher, and may be 25°C or lower or 20°C or lower. Here, Tg refers to a value measured using a DSC (differential scanning calorimeter) (for example, manufactured by Rigaku Corporation, Thermo Plus2). By adjusting the type and content of the constituent units constituting the (B) component (when the (B) component is an acrylic resin (acrylic rubber), the constituent units derived from (meth) acrylates), the Tg of the (B) component can be adjusted to the desired range.

[0102] The weight average molecular weight (Mw) of (B) component can be more than 100,000, more than 300,000 or more than 500,000, and can be less than 3,000,000, less than 2,000,000 or less than 1,000,000. If the Mw of (B) component is within such a range, film forming property, film strength, flexibility, viscosity, etc. can be properly controlled, and reflow soldering (Reflow soldering) is excellent, and embeddability can be improved. Here, Mw refers to the value converted using a calibration curve based on standard polystyrene measured by gel permeation chromatography (GPC). In addition, when multiple peaks are observed in GPC, the weight average molecular weight of the peak with the highest peak intensity is defined as the weight average molecular weight in this specification.

[0103] Examples of commercially available products of the component (B) include SG-P3 and SG-80H (both manufactured by Nagase ChemteX Corporation) and KH-CT-865 (manufactured by Resonac Corporation).

[0104] Based on the total amount of the film-like adhesive, the content of component (B) can be more than 15% by mass, more than 20% by mass or more than 25% by mass. If the content of component (B) is within such a range, it has excellent film formation, excellent fracture strength when forming a film, and can suppress the tendency of warping of the semiconductor device (semiconductor package). Based on the total amount of the film-like adhesive, the content of component (B) can be less than 45% by mass, less than 40% by mass or less than 35% by mass. If the content of component (B) is within such a range, it has a tendency to more easily increase the storage modulus after curing. In addition, the content of component (B) in the adhesive composition when forming a film-like adhesive can be the same as the above range.

[0105] (C) Ingredients: Inorganic filler

[0106] The film-like adhesive 1 may further contain the component (C). That is, the film-like adhesive 1 may exist in a form containing the component (C) or in a form substantially not containing the component (C).

[0107] As the component (C), for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, silicon dioxide, etc. can be cited. Among these, from the viewpoint of adjusting the melt viscosity, the component (C) can be silicon dioxide. The shape of the component (C) is not particularly limited, and can be spherical.

[0108] From the viewpoint of fluidity and storage modulus, the average particle size of component (C) can be less than 0.7 μm, or less than 0.6 μm, less than 0.5 μm, less than 0.4 μm or less than 0.3 μm. The average particle size of component (C) can be, for example, more than 0.01 μm. Here, the average particle size refers to the particle size with a cumulative frequency of 50% in the particle size distribution obtained by the laser diffraction / scattering method. In addition, the average particle size of component (C) can also be obtained by using a film-like adhesive containing component (C). In this case, the residue obtained by decomposing the resin component by heating the film-like adhesive is dispersed in a solvent to prepare a dispersion, and the average particle size of component (C) can be obtained based on the particle size distribution obtained by applying the laser diffraction / scattering method thereto.

[0109] Based on the total amount of the film-like adhesive, the content of the component (C) may be 0 to 25% by mass. If the content of the component (C) is within such a range, there is a tendency to be able to further thin film. In addition, if the content of the component (C) is within such a range, there is an excellent fracture strength when forming a thin film, excellent processability, and a tendency to suppress the warping of the semiconductor device (semiconductor package). In one embodiment, based on the total amount of the film-like adhesive, the content of the component (C) may be 22% by mass or less, 20% by mass or less, 17% by mass or less, 15% by mass or less, 12% by mass or less, 10% by mass or less, 7% by mass or less, 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1% by mass or less, 0.5% by mass or less, or 0.1% by mass or less. In one embodiment, based on the total amount of the film-like adhesive, the content of the component (C) may be 0% by mass. That is, in one embodiment, the film-like adhesive may not contain the component (C). In one embodiment, the content of component (C) may be 0% by mass or more, more than 0% by mass, 1% by mass or more, 3% by mass or more, or 5% by mass or more, based on the total amount of the film-like adhesive. In addition, the content of component (C) in the adhesive composition when forming a film-like adhesive may be the same as the above range.

[0110] The (A) component and the (B) component or the (A) component, the (B) component and the (C) component can be the main components of the film-like adhesive of the present embodiment. The total content of the (A) component and the (B) component or the total content of the (A) component, the (B) component and the (C) component can be, for example, 70% by mass or more, 80% by mass or more, 90% by mass or more, 95% by mass or more, 96% by mass or more, 97% by mass or more, 98% by mass or more, 99% by mass or more, 99.5% by mass or more, 99.7% by mass or more, or 99.9% by mass or more. The total content of the (A) component and the (B) component or the total content of the (A) component, the (B) component and the (C) component can be, for example, 100% by mass or less, 99.9% by mass or less, 99.7% by mass or less, or 99.5% by mass or less.

[0111] (D) Ingredient: Coupling agent

[0112] (D) Component may be a silane coupling agent. Examples of the silane coupling agent include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3-(2-aminoethyl)aminopropyltrimethoxysilane.

[0113] (E) Component: Curing accelerator

[0114] Examples of the component (E) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, etc. Among these, the component (E) may be imidazoles and derivatives thereof from the viewpoint of reactivity.

[0115] Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 2-phenylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole.

[0116] (E) Component may contain 2-phenylimidazole from the viewpoint of easily promoting curing at low temperature.

[0117] The film-like adhesive may further contain other components. Examples of other components include pigments, ion scavengers, antioxidants, and the like.

[0118] Based on the total amount of the film-like adhesive, the total content of the component (D), the component (E) and the other components may be 0% by mass or more, 0.1% by mass or more, 0.3% by mass or more, or 0.5% by mass or more, and may be 30% by mass or less, 20% by mass or less, 10% by mass or less, 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, or 1% by mass or less. In addition, the total content of the component (D), the component (E) and the other components in the adhesive composition when forming the film-like adhesive may be the same as the above range.

[0119] The thickness of the film adhesive 1 may be 1 to 15 μm. The thickness of the film adhesive 1 may be 12 μm or less, 10 μm or less, 8 μm or less, or 7 μm or less. The thickness of the film adhesive 1 can be determined, for example, by measuring the thickness at five locations of the cross section of the film adhesive 1 using a scanning microscope photograph and calculating the average of the measured values.

[0120] The storage modulus of the cured product after curing the film adhesive 1 at 140° C. for 30 minutes at 150° C. can be 50 MPa or more, 55 MPa or more, 60 MPa or more, 65 MPa or more, 70 MPa or more, 75 MPa or more, 80 MPa or more, 85 MPa or more, 90 MPa or more, 95 MPa or more, 100 MPa or more, 105 MPa or more, 110 MPa or more, 115 MPa or more, 120 MPa or more, 125 MPa or more, 130 MPa or more, 135 MPa or more, 140 MPa or more, 145 MPa or more, or 150 MPa or more. If the storage modulus is 50 MPa or more, the brittleness of the semiconductor chip caused by thin filmization can be compensated, and the occurrence of chip cracking can be suppressed as a result. The upper limit of the storage modulus is not particularly limited, and may be, for example, 500 MPa or less, 300 MPa or less, 250 MPa or less, or 200 MPa or less.

[0121] In this specification, for example, the storage modulus at 150°C of a cured product after a film adhesive is cured at 140°C for 30 minutes can be measured by the following method. A sample for measurement is prepared by stacking a plurality of film adhesives with a thickness of 5 μm to make the thickness 20 μm or more, and making it into a size of 4 mm in width × 20 mm in length or more. After the prepared sample is cured at 140°C for 30 minutes, the cured sample is placed in a dynamic viscoelasticity measuring device (Rheogel E-4000, manufactured by Universal Building Materials Co., Ltd.), a tensile load is applied, and the dynamic viscoelasticity is measured in a temperature-dependent measurement mode at room temperature (25°C) to 300°C under the conditions of a distance between chucks of 20 mm, a frequency of 10 Hz, and a heating rate of 3°C / min. Here, the value of the storage modulus at 150°C is read, and the value is taken as the storage modulus at 150°C.

[0122] Figure 1 The film-like adhesive 1 (adhesive film) shown is an adhesive formed by forming an adhesive composition containing (A) component and (B) component and components and (C) component added as needed into a film shape. This film-like adhesive 1 can be formed by applying the adhesive composition on a support film. In the formation of the film-like adhesive 1, a varnish (adhesive varnish) containing an adhesive composition and a solvent can be used. When using an adhesive varnish, the (A) component and (B) component and components and (C) component added as needed are mixed or kneaded in a solvent to prepare the adhesive varnish, and the obtained adhesive varnish is applied to a support film, and the solvent is removed by heating and drying, thereby obtaining the film-like adhesive 1.

[0123] The support film is not particularly limited as long as it is a film that can withstand the above-mentioned heating and drying, and can be, for example, a polyester film, a polypropylene film, a polyethylene terephthalate film, a polyimide film, a polyetherimide film, a polyethylene naphthalate film, a polymethylpentene film, etc. The support film can be a multilayer film formed by combining two or more kinds of films, or a film whose surface is treated with a silicone-based, silica-based release agent, etc. The thickness of the support film can be, for example, 10 to 200 μm or 20 to 170 μm.

[0124] The mixing or kneading can be carried out using a common disperser such as a stirrer, a pestle, a three-roll mill, or a ball mill, or by combining them as appropriate.

[0125] The solvent used to prepare the adhesive varnish is not limited as long as it can evenly dissolve, knead or disperse the various components, and conventionally known solvents can be used. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene, and xylene. From the viewpoint of drying speed and price, the solvent may be methyl ethyl ketone or cyclohexanone.

[0126] As a method for coating the adhesive varnish on the support film, a known method can be used, for example, a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a rod coating method, a curtain coating method, etc. The heating and drying conditions are not particularly limited as long as the used solvent is fully volatilized, and can be 50 to 150° C. and 1 to 30 minutes.

[0127] Since the film adhesive 1 can be made thinner, it can be preferably used in the manufacturing process of a semiconductor device formed by stacking a plurality of semiconductor chips. In this case, the semiconductor device can be a stacked MCP or a three-dimensional NAND memory.

[0128] [Dicing and Die Bonding Integrated Film]

[0129] Figure 4 It is a schematic cross-sectional view showing one embodiment of a dicing die bonding integrated film. Figure 4 The dicing die bonding integrated film 10 shown in the figure sequentially comprises a base material layer 2, a pressure-sensitive adhesive layer 3, and an adhesive layer 1A formed of the above-mentioned film-like adhesive 1. The base material layer 2 and the pressure-sensitive adhesive layer 3 may be a dicing film 4. When such a dicing die bonding integrated film 10 is used, the lamination process for the semiconductor wafer is one time, so that the operation efficiency can be achieved. The dicing die bonding integrated film may also be in the form of a film, a sheet, a tape, etc.

[0130] The dicing film 4 includes a base material layer 2 and a pressure-sensitive adhesive layer 3 provided on the base material layer 2 .

[0131] As the substrate layer 2, for example, plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, polyimide film, etc. can be cited. These substrate layers 2 can also be subjected to surface treatments such as primer coating, UV treatment, corona discharge treatment, grinding treatment, and etching treatment as needed.

[0132] The pressure-sensitive adhesive layer 3 is a layer formed by a pressure-sensitive adhesive. There are no particular restrictions on the pressure-sensitive adhesive as long as it has sufficient adhesive force to prevent the semiconductor chip from flying during the cutting process and has a low adhesive force that does not damage the semiconductor chip in the subsequent semiconductor chip pickup process. It is possible to use a previously known pressure-sensitive adhesive in the field of cutting films. The pressure-sensitive adhesive may also be either a radiation-curing type or a non-radiation-curing type. The radiation may be, for example, ultraviolet rays. A non-radiation-curing pressure-sensitive adhesive is a pressure-sensitive adhesive that shows constant adhesiveness under short-term pressure. On the other hand, a radiation-curing pressure-sensitive adhesive is a pressure-sensitive adhesive that has the property of decreasing adhesiveness by irradiation with radiation (for example, ultraviolet rays).

[0133] From the viewpoint of economic efficiency and film handling properties, the thickness of the dicing film 4 (the base material layer 2 and the pressure-sensitive adhesive layer 3 ) may be 60 to 150 μm or 70 to 130 μm.

[0134] The dicing die bonding integrated film 10 can be obtained, for example, by preparing a film adhesive 1 and a dicing film 4, and bonding the film adhesive 1 to the pressure-sensitive adhesive layer 3 of the dicing film 4. Furthermore, the dicing die bonding integrated film 10 can also be obtained, for example, by preparing a dicing film 4, and applying an adhesive composition (adhesive varnish) on the pressure-sensitive adhesive layer 3 of the dicing film 4 in the same manner as the method of forming the above-mentioned film adhesive 1.

[0135] When the film adhesive 1 is bonded to the pressure-sensitive adhesive layer 3 of the dicing film 4, the dicing die bonding integrated film 10 can be formed by laminating the film adhesive 1 on the dicing film 4 under specified conditions (for example, room temperature (25° C.) or heated) using a roll laminator, a vacuum laminator, etc. The dicing die bonding integrated film 10 can be manufactured continuously with excellent efficiency, and thus can be formed using a roll laminator in a heated state.

[0136] Film adhesives and dicing die bonding integrated films can be used in the manufacturing process of semiconductor devices, and can also be used in the manufacturing process of semiconductor devices formed by stacking multiple semiconductor chips. Film adhesives and dicing die bonding integrated films can be used in the manufacturing process of semiconductor devices, and the manufacturing process of semiconductor devices includes the following steps: laminating the adhesive layer of the film adhesive or dicing die bonding integrated film on a semiconductor wafer or a singulated semiconductor chip, and obtaining a semiconductor chip with an adhesive sheet by dividing it based on a rotating blade, laser or stretching; and bonding the semiconductor chip with the adhesive sheet to a supporting component or another semiconductor chip through the adhesive sheet.

[0137] The film adhesive can also be suitably used as an adhesive for bonding semiconductor chips together in a stacked MCP (for example, a three-dimensional NAND memory) which is a semiconductor device in which a plurality of semiconductor chips are stacked.

[0138] The film-like adhesive can be used, for example, as a protective sheet for protecting the back surface of a semiconductor chip of a flip-chip semiconductor device, a sealing sheet for sealing between the surface of a semiconductor chip of a flip-chip semiconductor device and an adherend, and the like.

[0139] The following is a detailed description of a semiconductor device manufactured using a film adhesive and a dicing die bonding integrated film using the accompanying drawings. In addition, semiconductor devices of various structures have been proposed in recent years, and the use of the film adhesive and dicing die bonding integrated film of this embodiment is not limited to the semiconductor device of the structure described below.

[0140] [Semiconductor devices]

[0141] Figure 5 It is a schematic cross-sectional view showing one embodiment of a semiconductor device. Figure 5 The semiconductor device 100 shown in the figure includes a semiconductor chip 11 (first semiconductor chip), a support member 12 on which the semiconductor chip 11 is mounted, and an adhesive member 15. The adhesive member 15 is provided between the semiconductor chip 11 and the support member 12 to bond the semiconductor chip 11 to the support member 12. The adhesive member 15 is a cured product of an adhesive composition (cured product of a film-like adhesive). The connection terminal (not shown) of the semiconductor chip 11 is electrically connected to an external connection terminal (not shown) via a bonding wire 13 and is sealed by a sealing material 14.

[0142] Figure 6 FIG. 1 is a schematic cross-sectional view showing another embodiment of a semiconductor device. Figure 6In the semiconductor device 110 shown, the first semiconductor chip 11a (first semiconductor chip) is bonded to a support member 12 having a terminal 16 by an adhesive member 15a (a cured product of an adhesive composition (a cured product of a film-like adhesive)), and a second semiconductor chip 11b (second semiconductor chip) is further bonded to the first semiconductor chip 11a by an adhesive member 15b (a cured product of an adhesive composition (a cured product of a film-like adhesive)). The connection terminals (not shown) of the first semiconductor chip 11a and the second semiconductor chip 11b are electrically connected to external connection terminals via bonding wires 13 and sealed by a sealing material 14. It can also be said that Figure 6 The semiconductor device 110 shown in FIG. Figure 5 The semiconductor device 100 shown further includes another semiconductor chip (11b) stacked on the surface of the semiconductor chip (11a).

[0143] Figure 7 It is a schematic cross-sectional view showing another embodiment of a semiconductor device. Figure 7 The semiconductor device 120 shown in the figure includes a support member 12, and semiconductor chips 11a (first semiconductor chip), 11b (second semiconductor chip), 11c (third semiconductor chip), and 11d (fourth semiconductor chip) stacked on the support member 12. In order to connect to the connection terminals (not shown) formed on the surface of the support member 12, the four semiconductor chips 11a, 11b, 11c, and 11d are stacked at positions that are offset from each other in the lateral direction (direction perpendicular to the stacking direction) (refer to Figure 7 ). The semiconductor chip 11a is bonded to the support member 12 by the adhesive member 15a (cured material of the adhesive composition (cured material of the film-like adhesive)), and the three semiconductor chips 11b, 11c, and 11d are also respectively interposed with adhesive members 15b, 15c, and 15d (cured material of the adhesive composition (cured material of the film-like adhesive)). It can also be said that Figure 7 The semiconductor device 120 shown in FIG. Figure 5 The semiconductor device 100 shown in the figure further includes other semiconductor chips (11b, 11c, 11d) stacked on the surface of the semiconductor chip (11a).

[0144] The semiconductor device (semiconductor package) has been described in detail above with respect to the embodiments of the present invention, but the present invention is not limited to the above embodiments. Figure 7 In the embodiment, a semiconductor device in which four semiconductor chips are stacked is exemplified, but the number of stacked semiconductor chips is not limited thereto. Figure 7In the figure, a semiconductor device is illustrated in which semiconductor chips are stacked at positions offset from each other in the lateral direction (direction perpendicular to the stacking direction), but a semiconductor device may also be illustrated in which semiconductor chips are stacked at positions not offset from each other in the lateral direction (direction perpendicular to the stacking direction).

[0145] [Method for manufacturing semiconductor device]

[0146] Figure 5 , Figure 6 and Figure 7 The semiconductor device (semiconductor package) shown can be obtained by the following method, which includes the following steps: interposing the above-mentioned film-like adhesive between the semiconductor chip (first semiconductor chip) and the supporting member or between the semiconductor chip (first semiconductor chip) and the semiconductor chip (second semiconductor chip), so as to bond the semiconductor chip (first semiconductor chip) and the supporting member or the semiconductor chip (first semiconductor chip) and the semiconductor chip (second semiconductor chip). More specifically, the above-mentioned film-like adhesive can be interposed between the semiconductor chip and the supporting member or between the semiconductor chip (first semiconductor chip) and the semiconductor chip (second semiconductor chip), and the two can be bonded by heating and pressing them, and then, according to need, it can be obtained through a heat curing step, a wire bonding step, a sealing step using a sealing material, a heating and melting step including solder reflow, etc.

[0147] As a method for placing a film-like adhesive between a semiconductor chip (first semiconductor chip) and a supporting component or between a semiconductor chip (first semiconductor chip) and a semiconductor chip (second semiconductor chip), as described later, a semiconductor chip with an adhesive sheet is pre-fabricated and then attached to a supporting component or another semiconductor chip.

[0148] Next, use Figure 4 An embodiment of a method for manufacturing a semiconductor device using a dicing die bonding integrated film will be described below. The method for manufacturing a semiconductor device using a dicing die bonding integrated film is not limited to the method for manufacturing a semiconductor device described below.

[0149] A semiconductor device can be obtained, for example, by the following method, which includes the following steps: attaching a semiconductor wafer to the adhesive layer of the above-mentioned cut die bonding integrated film (lamination step); producing a plurality of singulated semiconductor chips with adhesive sheets by cutting the semiconductor wafer with the adhesive layer attached (cutting step); and bonding a first semiconductor chip with an adhesive sheet having a first semiconductor chip and a first adhesive sheet as a semiconductor chip with an adhesive sheet to a supporting component via a first adhesive sheet (bonding the semiconductor chip with an adhesive sheet to a supporting component via an adhesive sheet) (first bonding step). The manufacturing method of a semiconductor device may further include the following steps: bonding a second semiconductor chip with an adhesive sheet having a second semiconductor chip and a second adhesive sheet as a semiconductor chip with an adhesive sheet to the surface of the first semiconductor chip in the first semiconductor chip with an adhesive sheet bonded to a supporting component via a second adhesive sheet (bonding another semiconductor chip with an adhesive sheet to the surface of the semiconductor chip bonded to the supporting component via an adhesive sheet possessed by the other semiconductor chip with an adhesive sheet) (second bonding step).

[0150] The lamination step is a step of pressing the semiconductor wafer onto the adhesive layer 1A of the dicing die bonding integrated film 10 to bond and hold the semiconductor wafer. This step may be performed while pressing with a pressing mechanism such as a pressure roller.

[0151] Examples of the semiconductor wafer include single crystal silicon, polycrystalline silicon, various ceramics, and compound semiconductors such as gallium arsenide.

[0152] The cutting process is a process for cutting the semiconductor wafer. In this way, the semiconductor wafer can be cut into a specified size to manufacture a plurality of single-piece semiconductor chips with adhesive sheets. Cutting can be performed, for example, from the circuit surface side of the semiconductor wafer according to a conventional method. In addition, in this process, for example, a method called full cutting in which a cut is provided to the cutting film, a method of dividing by providing a half cut on the semiconductor wafer and cooling and stretching it, a method of dividing it by laser, etc. can be adopted. There is no particular limitation on the cutting device used in this process, and a conventionally known device can be used.

[0153] Semiconductor chips are composed of, for example, a circuit layer and a semiconductor layer (for example, single crystal silicon, polycrystalline silicon, various ceramics, compound semiconductors such as gallium arsenide). Examples of semiconductor chips include ICs (integrated circuits). Examples of supporting components include lead frames such as 42 alloy lead frames and copper lead frames; plastic films such as polyimide resins and epoxy resins; modified plastic films formed by impregnating and curing plastics such as polyimide resins and epoxy resins in substrates such as glass nonwoven fabrics; ceramics such as alumina, etc.

[0154] The manufacturing method of the semiconductor device may also include a picking-up process as needed. The picking-up process is a process for picking up the semiconductor chip with the adhesive sheet in order to peel off the semiconductor chip with the adhesive sheet that is bonded and fixed to the dicing die bonding integrated film. There is no particular limitation on the picking-up method, and various methods known in the past can be used. As such a method, for example, a method of lifting each semiconductor chip with the adhesive sheet from the dicing die bonding integrated film side by a needle, and picking up the lifted semiconductor chip with the adhesive sheet by a picking-up device, etc.

[0155] Here, when the pressure-sensitive adhesive layer is a radiation (e.g., ultraviolet) curing type, the pressure-sensitive adhesive layer can be irradiated with radiation before picking up. As a result, the adhesive strength of the pressure-sensitive adhesive layer to the adhesive sheet decreases, and the semiconductor chip with the adhesive sheet can be easily peeled off. As a result, the semiconductor chip with the adhesive sheet can be picked up without damaging it.

[0156] The first bonding step is a step of bonding the first semiconductor chip with an adhesive sheet formed by cutting to a support component for mounting the semiconductor chip via the first adhesive sheet. The method for manufacturing a semiconductor device may also include a step of bonding the second semiconductor chip with an adhesive sheet to the surface of the semiconductor chip bonded to the support component via the second adhesive sheet (second bonding step) as needed. The bonding can be performed by crimping. There is no particular limitation on the crimping conditions, and they can be appropriately set as needed. The crimping conditions may be, for example, a temperature of 80 to 160°C, a load of 5 to 15N, and a time of 1 to 10 seconds. In addition, as a support component, the same support component as described above can be exemplified.

[0157] The method for manufacturing a semiconductor device may also include a step (thermal curing step) of further thermally curing the adhesive sheet (the first adhesive sheet in the first semiconductor chip with an adhesive sheet and the second adhesive sheet in the second semiconductor chip with an adhesive sheet) or the film-like adhesive as required. By further thermally curing the adhesive sheet (the first adhesive sheet in the first semiconductor chip with an adhesive sheet and the second adhesive sheet in the second semiconductor chip with an adhesive sheet) to which the semiconductor chip (the first semiconductor chip) and the supporting component, as well as the semiconductor chip (the first semiconductor chip) and the semiconductor chip (the second semiconductor chip) are bonded, they can be more firmly bonded and fixed. In the case of thermal curing, pressure may also be applied at the same time to cure it. The heating temperature in this step can be appropriately changed according to the constituent components of the adhesive sheet. The heating temperature may be, for example, 60 to 200°C or 100 to 180°C. In addition, the temperature or pressure may also be changed in stages. The heating time may be, for example, 1 to 120 minutes or 15 to 60 minutes.

[0158] The method for manufacturing a semiconductor device may also include, as needed, a step of electrically connecting the first semiconductor chip and the second semiconductor chip to a supporting component using a bonding wire. More specifically, it may include a step of electrically connecting an electrode pad on the semiconductor chip to the end of a terminal portion (inner lead) of the supporting component using a bonding wire (wire bonding step). As bonding wires, for example, gold wires, aluminum wires, copper wires, etc. are used. The temperature during wire bonding may be in the range of 80 to 250°C or 80 to 220°C. The heating time may be from several seconds to several minutes. Wire bonding may also be performed by simultaneously using ultrasonic vibration energy and pressure-applied compression energy while heating within the above-mentioned temperature range.

[0159] The method for manufacturing a semiconductor device may also include, as required, a step of sealing a semiconductor chip using a sealing material (sealing step). This step is performed to protect a semiconductor chip or a bonding wire mounted on a supporting member. This step can be performed by molding a sealing resin (sealing resin) with a mold. As a sealing resin, for example, an epoxy resin can be used. By burying the supporting member and the residue by heat and pressure during sealing, peeling caused by bubbles in the bonding interface can be prevented.

[0160] The method for manufacturing a semiconductor device may also include a step (post-curing step) of completely curing the sealing resin that is not fully cured in the sealing step as needed. Even if the adhesive sheet is not thermally cured in the sealing step, the adhesive sheet can be thermally cured while curing the sealing resin in this step to bond and fix. The heating temperature in this step can be appropriately set according to the type of sealing resin, for example, it can be in the range of 165 to 185° C., and the heating time can be about 0.5 to 8 hours.

[0161] The method for manufacturing a semiconductor device may also include, as needed, a step of heating a semiconductor chip bonded to a supporting member or a semiconductor chip using a reflow furnace (heating and melting step). In this step, the resin-sealed semiconductor device may also be surface-mounted on the supporting member. As a surface mounting method, for example, solder may be supplied to a printed circuit board in advance, and then heated and melted by warm air or the like, and then reflowed. As a heating method, for example, hot air reflow, infrared reflow, etc. may be mentioned. Furthermore, the heating method may heat the entire device or may heat a part of the device. The heating temperature may be, for example, in the range of 240 to 280°C.

[0162] Example

[0163] Hereinafter, the present invention will be specifically described based on Examples, but the present invention is not limited to these.

[0164] [Production of film adhesive]

[0165] (Examples 1 to 4 and Comparative Examples 1 and 2)

[0166] <Preparation of adhesive varnish>

[0167] Cyclohexanone was added to a mixture of component (A) (component (A1) and component (A2)) and component (C) in the components and contents (unit: parts by mass) shown in Table 1, and the mixture was stirred and mixed. Component (B) was added thereto in the components and contents (unit: parts by mass) shown in Table 1, and the mixture was stirred. Component (D) and component (E) were further added thereto, and the mixture was stirred until the components became uniform, thereby preparing adhesive varnishes of Examples 1 to 4 and Comparative Examples 1 and 2. In addition, the components shown in Table 1 refer to the following components, and the numerical values ​​shown in Table 1 refer to the parts by mass of the components (solid content) excluding the solvent and the like.

[0168] (A) Component: Thermosetting resin component

[0169] (A1) Component: Epoxy resin

[0170] (A1a-1) EXA830-CRP (trade name, manufactured by DIC Corporation, bisphenol F type epoxy resin, epoxy equivalent: 155 to 163 g / eq, softening point: 40°C or less, liquid at 30°C)

[0171] (A1b-1) N-500P-10 (trade name, manufactured by DIC Corporation, o-cresol novolac type epoxy resin, epoxy equivalent: 204 g / eq, softening point: 75 to 85°C, solid at 30°C)

[0172] (A1b-2) HP-4710 (trade name, manufactured by DIC Corporation, naphthalene-type epoxy resin, epoxy equivalent: 170 g / eq, softening point: 95° C., solid at 30° C.)

[0173] (A2) Component: Phenolic resin

[0174] (A2-1) PSM-4326 (trade name, manufactured by Gunei Chemical Industry Co., Ltd., novolac type phenolic resin, hydroxyl equivalent: 105 g / eq, softening point: 120° C.)

[0175] (A2-2) MEH-7800M (trade name, manufactured by Meiwa Chemical Industry Co., Ltd., phenol novolac type phenolic resin, hydroxyl equivalent: 175 g / eq, softening point: 61 to 90° C.)

[0176] (B) Component: Elastomer

[0177] (B-1) SG-P3 (trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 800,000, Tg: 12°C)

[0178] (C) Ingredients: Inorganic filler

[0179] (C-1) Silica filler dispersion (manufactured by CIK NanoTek Corporation, silica filler, average particle size: 0.10 μm)

[0180] (C-2) SC2050-HLG (trade name, manufactured by Admatechs Co., Ltd., silica filler dispersion, average particle size: 0.50 μm)

[0181] (C-3) R972 (trade name, manufactured by NIPPON AEROSIL CO., LTD., silica, average particle size 0.016 μm)

[0182] (D) Ingredient: Coupling agent

[0183] (D-1) Z-6119 (trade name, manufactured by Dow Toray Co., Ltd., γ-ureidopropyltriethoxysilane)

[0184] (D-2) A-189 (trade name, manufactured by Nippon Unicar Company Limited, γ-mercaptopropyltrimethoxysilane)

[0185] (E) Component: Curing accelerator

[0186] (E-1) 2PZ-T (trade name, manufactured by SHIKOKU CHEMICALS CORPORATION, 2-phenylimidazole)

[0187] (E-2) 2PZ-CN (trade name, manufactured by SHIKOKU CHEMICALS CORPORATION, 1-cyanoethyl-2-phenylimidazole)

[0188] <Production of film adhesive>

[0189] The adhesive varnish of Examples 1 to 4 and Comparative Examples 1 and 2 was filtered with a 100-mesh filter and vacuum defoamed. A 38-μm-thick polyethylene terephthalate film (PET) film subjected to demolding treatment was prepared as a support film, and the adhesive varnish after vacuum defoaming was applied on the PET film. The applied adhesive varnish was heated and dried at 90°C for 5 minutes, and then heated and dried at 140°C for 5 minutes to obtain film-like adhesives of Examples 1 to 4 and Comparative Examples 1 and 2 in a B-stage state. In the film-like adhesives of Examples 1 to 4 and Comparative Examples 1 and 2, the thickness of the film-like adhesive was adjusted to 5 μm by the amount of adhesive varnish applied.

[0190] [Evaluation of film adhesives]

[0191] <Evaluation of film formability>

[0192] The coated surfaces of the film adhesives of Examples 1 to 4 and Comparative Examples 1 and 2 were visually checked and evaluated based on the presence or absence of defects such as foreign matter, peeling, and streaks. Items where no defects were found were evaluated as "A", and items where defects were found were evaluated as "B". The results are shown in Table 1.

[0193] <Measurement of onset temperature, peak temperature and calorific value>

[0194] The film adhesives of Examples 1 to 4 and Comparative Examples 1 and 2 were weighed 10±0.5 mg on an aluminum crucible (manufactured by Epolead Service Co., Ltd.), covered with an aluminum lid, and the evaluation sample was sealed in the sample crucible using a crimper. Using a differential scanning calorimeter (Thermo plus DSC8235E, manufactured by Rigaku Corporation), DSC was measured in a nitrogen atmosphere at a heating rate of 10°C / min and a measurement temperature range of 30 to 300°C. As a means of analyzing the calorific value, the total area analysis method was used. The calorific value (unit: J / g) was calculated by performing analysis instructions within the temperature range of 30°C to 300°C of each DSC curve, specifying the baseline within the analysis temperature range, and integrating the peak area. As an analytical means for the onset temperature, the total area analysis method was used to analyze the indication in the temperature range of 30°C to 300°C, and the intersection of the baseline and the maximum slope point of the exothermic peak in each DSC curve was calculated to obtain the onset temperature (unit: °C). As an analytical means for the onset temperature, the maximum point of the exothermic peak was obtained, and the peak temperature (unit: °C) was obtained. The results are shown in Table 1.

[0195] <Measurement of storage modulus>

[0196] The storage modulus after curing was measured using the film adhesives of Examples 1 to 4 and Comparative Examples 1 and 2. The storage modulus after curing was measured by the following method. That is, a plurality of film adhesives with a thickness of 5 μm were stacked to make the thickness of 20 μm or more, and a sample for measurement was prepared by making it into a size of 4 mm in width × 20 mm in length or more. After the prepared sample was cured at 140°C for 30 minutes, the cured sample (cured product) was placed in a dynamic viscoelasticity measuring device (Rheogel E-4000, manufactured by Universal Building Materials Co., Ltd.), a tensile load was applied, and the dynamic viscoelasticity was measured in a temperature-dependent measurement mode at room temperature (25°C) to 300°C under the conditions of a distance between chucks of 20 mm, a frequency of 10 Hz, and a heating rate of 3°C / min, and the storage modulus value at 150°C was read, and the value was used as the storage modulus at 150°C. The results are shown in Table 1. The storage elastic modulus at 150° C. has a larger value (for example, 50 MPa or more), which can more effectively compensate for the brittleness of the semiconductor chip due to thinning, and as a result, can suppress the occurrence of chip cracks.

[0197]

[0198] As shown in Table 1, the storage modulus at 150°C of the cured product after the film adhesive was cured at 140°C for 30 minutes showed sufficiently high values ​​for the film adhesives of Examples 1 to 4 that met the required conditions, compared with the film adhesives of Comparative Examples 1 and 2 that did not meet the required conditions. These results confirmed that the film adhesive of the present invention can sufficiently suppress the occurrence of chip cracks even when cured under low temperature and short time heating conditions.

[0199] Explanation of symbols

[0200] 1-film adhesive, 1A-adhesive layer, 2-base material layer, 3-pressure-sensitive adhesive layer, 4-dicing film, 10-dicing die bonding integrated film, 11, 11a, 11b, 11c, 11d-semiconductor chip, 12-support component, 13-bonding wire, 14-sealing material, 15, 15a, 15b, 15c, 15d-adhesive component, 16-terminal, 100, 110, 120-semiconductor device.

Claims

1. A film-like adhesive comprising a thermosetting resin component and an elastomer, wherein: In the DSC curve of the film adhesive obtained by differential scanning calorimetry under the conditions of a heating rate of 10°C / min and a measurement temperature range of 30 to 300°C, the starting temperature of the exothermic peak observed in the DSC curve is below 165°C, the peak temperature is below 185°C, and the calorific value is above 90 J / g.

2. The film-like adhesive according to claim 1, which may further contain an inorganic filler, wherein: The content of the inorganic filler is 0 to 25% by mass based on the total amount of the film adhesive.

3. The film adhesive according to claim 1 or 2, wherein: The thermosetting resin component includes epoxy resin.

4. The film-like adhesive according to claim 3, wherein: The thermosetting resin component further comprises a phenolic resin.

5. The film-like adhesive according to claim 1 or 2, wherein: The film adhesive has a thickness of 1 to 15 μm.

6. The film-like adhesive according to claim 1 or 2, wherein: The storage elastic modulus of a cured product after curing the film adhesive at 140° C. for 30 minutes is 80 MPa or more at 150° C.

7. The film-like adhesive according to claim 1 or 2, which is used in a process for manufacturing a semiconductor device in which a plurality of semiconductor chips are stacked.

8. The film-like adhesive according to claim 7, wherein: The semiconductor device is a three-dimensional NAND memory. 9 . A dicing die bonding integrated film comprising, in order, a substrate layer, a pressure-sensitive adhesive layer, and an adhesive layer formed of the film-like adhesive according to claim 1 or 2.

10. A semiconductor device comprising: 1st semiconductor chip; a supporting member for mounting the first semiconductor chip; and The cured product of the film-like adhesive according to claim 1 or 2 is provided between the first semiconductor chip and the supporting member to bond the first semiconductor chip and the supporting member. 11 . The semiconductor device according to claim 10 , further comprising a second semiconductor chip which is stacked on a surface of the first semiconductor chip and is different from the first semiconductor chip.

12. A method for manufacturing a semiconductor device, comprising the following steps: Attaching the adhesive layer of the dicing die bonding integrated film according to claim 9 to a semiconductor wafer; Manufacturing a plurality of semiconductor chips with adhesive sheets by dicing the semiconductor wafer with the adhesive layer attached thereto; and A first semiconductor chip with an adhesive sheet as the semiconductor chip with an adhesive sheet having a first semiconductor chip and the first adhesive sheet is bonded to a supporting member via a first adhesive sheet.

13. The method for manufacturing a semiconductor device according to claim 12, further comprising the following step: Thermally curing the first adhesive sheet in the first semiconductor chip with an adhesive sheet under the conditions of 100 to 180° C. for 15 to 60 minutes; and The first semiconductor chip and the supporting member are electrically connected by a bonding wire.

14. The method for manufacturing a semiconductor device according to claim 12, further comprising the following step: A second semiconductor chip with an adhesive sheet having a second semiconductor chip and the second adhesive sheet as the semiconductor chip with an adhesive sheet is bonded to the surface of the first semiconductor chip among the first semiconductor chips with an adhesive sheet bonded to the supporting member via a second adhesive sheet.

15. The method for manufacturing a semiconductor device according to claim 14, further comprising the following step: Thermally curing the first adhesive sheet in the first semiconductor chip with an adhesive sheet and the second adhesive sheet in the second semiconductor chip with an adhesive sheet under the conditions of 100 to 180° C. for 15 to 60 minutes; and The first semiconductor chip and the second semiconductor chip are electrically connected to the support member by bonding wires.

16. A method for manufacturing a semiconductor device, comprising the following steps: The film adhesive according to claim 1 or 2 is interposed between the first semiconductor chip and a supporting member or between the first semiconductor chip and a second semiconductor chip different from the first semiconductor chip, thereby bonding the first semiconductor chip to the supporting member or the first semiconductor chip to the second semiconductor chip.

17. The method for manufacturing a semiconductor device according to claim 16, further comprising the following step: Thermally curing the film adhesive at 100 to 180° C. for 15 to 60 minutes; and The first semiconductor chip and the second semiconductor chip are electrically connected to the support member by bonding wires.

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