Polishing liquid, polishing liquid set, polishing method, method for manufacturing component, and method for manufacturing semiconductor component

Abstract

A polishing liquid containing abrasive grains, an additive, and water, the additive containing (A1) a polyglycerol having a weight average molecular weight of 350-2800, and (B) a compound having two or more nitrogen atoms to which a hydroxyalkyl group is bonded. A polishing liquid containing abrasive grains, an additive, and water, the additive containing (A2) a polyglycerol having a hydroxyl group value of 800-1000 mgKOH / g, and (B) a compound having two or more nitrogen atoms to which a hydroxyalkyl group is bonded.

Description

Technical Field

[0001] The present invention relates to a grinding liquid, a grinding liquid set, a grinding method, a parts manufacturing method, a semiconductor parts manufacturing method and the like. Background Art

[0002] In the field of semiconductor manufacturing, as the performance of Very Large Scale Integration (VLSI) devices increases, there are limitations in achieving both high integration and high speed through miniaturization technology, which is an extension of the previous technology. Therefore, a technology is being developed that promotes the miniaturization of semiconductor elements while also achieving high integration in the vertical direction (i.e., multilayer wiring technology).

[0003] In the process of manufacturing devices with multilayered wiring, CMP (chemical mechanical polishing) technology is one of the most important technologies. CMP technology is a technology for flattening the surface of the polished part obtained by forming a thin film on a substrate through chemical vapor deposition (CVD) or the like. For example, in order to ensure the focal depth of photolithography, flattening treatment based on CMP is indispensable. If there are unevenness on the surface of the polished part, it will cause problems such as failure to focus in the exposure process or failure to fully form a fine wiring structure. In addition, CMP technology is also applicable to the process of forming element separation (inter-element separation. STI: shallow trench isolation)) area by polishing a plasma oxide film (BPSG, HDP-SiO2, p-TEOS, etc.) in the manufacturing process of the device; the process of forming an ILD film (interlayer insulating film. An insulating film that electrically insulates metal parts (wiring, etc.) in the same layer); the process of flattening a plug (for example, Al / Cu plug) after burying a film containing silicon oxide in a metal wiring, etc.

[0004] CMP is usually performed using a device that can supply a polishing liquid to a polishing member (polishing pad, etc.). In addition, the polishing liquid is supplied between the polished surface (surface) of the polished member and the polishing member, and the polished member is pressed against the polishing member, thereby polishing the polished surface of the polished member. Thus, in CMP technology, polishing liquid is one of the essential technologies, and various polishing liquids have been developed so far in order to obtain high-performance polishing liquids (for example, refer to the following patent document 1).

[0005] Previous technical literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Application Publication No. 2008-288537 Summary of the invention

[0008] Technical issues to be solved by the invention

[0009] When the polished surface of the polished component is polished using a polishing liquid, the polishing speed is sometimes unstable for the outer peripheral portion of the polished surface about 3 mm away from the outer periphery due to the unstable application of pressure during polishing. Therefore, from the perspective of evaluating a stable polishing speed, the polishing speed of the outer edge of the inner area remaining on the polished surface excluding the outer peripheral portion is sometimes evaluated as the polishing speed of the outer peripheral area on the polished surface. Moreover, when the polished surface of the polished component is polished using a polishing liquid, from the perspective of improving the flatness of the polished surface after polishing, it is sometimes required to polish the outer edge of the inner area remaining on the polished surface excluding the outer peripheral portion at a sufficient polishing speed.

[0010] In addition, in the polishing liquid containing abrasive grains, polyglycerol is sometimes used from the viewpoints of improving the dispersion stability of the abrasive grains in the polishing liquid and improving the removability of the abrasive grains when cleaning the polished surface after polishing, but sometimes a sufficient polishing rate cannot be obtained. Therefore, sometimes a sufficient polishing rate is required for the polishing liquid using polyglycerol, and in particular, sometimes the outer edge of the inner area remaining on the polished surface except the peripheral portion is required to be polished at a sufficient polishing rate.

[0011] One aspect of the present invention aims to provide a polishing liquid which uses polyglycerol and is capable of polishing the outer edge of the inner area remaining on the polished surface except the outer peripheral portion at a sufficient polishing speed. Another aspect of the present invention aims to provide a polishing liquid kit for obtaining the polishing liquid. Another aspect of the present invention aims to provide a polishing method using the polishing liquid. Another aspect of the present invention aims to provide a method for manufacturing a part which uses a polished part polished by the polishing method. Another aspect of the present invention aims to provide a method for manufacturing a semiconductor part which uses a polished part polished by the polishing method.

[0012] Means for solving technical problems

[0013] The present inventors have found that when using a compound having two or more nitrogen atoms to which a hydroxyalkyl group is bonded, the outer edge of the inner region remaining except the outer peripheral portion of the polished surface can be polished at a sufficient polishing rate by using polyglycerol having a specific weight average molecular weight or hydroxyl value.

[0014] The present invention relates to the following [1] to

[16] in several aspects.

[0015] [1] A polishing liquid comprising abrasive grains, an additive and water, wherein the additive comprises (A1) polyglycerol having a weight average molecular weight of 350 to 2800 and (B) a compound having two or more nitrogen atoms to which a hydroxyalkyl group is bonded.

[0016] [2] A polishing liquid comprising abrasive grains, an additive and water, wherein the additive comprises (A2) polyglycerol having a hydroxyl value of 800 to 1000 mgKOH / g and (B) a compound having two or more nitrogen atoms to which a hydroxyalkyl group is bonded.

[0017] [3] The polishing liquid according to [1] or [2], wherein

[0018] The abrasive grains contain a cerium-based compound.

[0019] [4] The polishing liquid according to any one of [1] to [3], wherein

[0020] The content of the polyglycerol is 0.001 to 10% by mass.

[0021] [5] The polishing liquid according to any one of [1] to [4], wherein

[0022] The component (B) contains ethylenediaminetetraethanol.

[0023] [6] The polishing liquid according to any one of [1] to [5], wherein

[0024] The component (B) contains ethylenediaminetetrapropanol.

[0025] [7] The polishing liquid according to any one of [1] to [6], wherein

[0026] The content of the component (B) is 0.001 to 5% by mass.

[0027] [8] The polishing liquid according to any one of [1] to [7], wherein

[0028] The additive further contains a 4-pyrone compound represented by the following general formula (1).

[0029]

[0030] [Wherein, X 11 , X 12 and X 13 Each independently represents a hydrogen atom or a monovalent substituent.]

[0031] [9] The polishing liquid according to [8], wherein

[0032] The 4-pyrone compound contains at least one selected from the group consisting of 3-hydroxy-2-methyl-4-pyrone, 5-hydroxy-2-(hydroxymethyl)-4-pyrone and 2-ethyl-3-hydroxy-4-pyrone.

[0033]

[10] The polishing liquid according to [8] or [9], wherein

[0034] The content of the 4-pyrone compound is 0.001 to 5% by mass.

[0035]

[11] The polishing liquid according to any one of [1] to

[10] , wherein

[0036] The additive further contains a saturated monocarboxylic acid.

[0037]

[12] The polishing liquid according to any one of [1] to

[11] , wherein the pH is 8.00 or less.

[0038]

[13] A polishing liquid set, wherein:

[0039] The polishing liquid according to any one of [1] to

[12] is stored as a first liquid and a second liquid, wherein the first liquid contains the abrasive and water, and the second liquid contains at least one of the additives and water.

[0040]

[14] A polishing method comprising the step of polishing a polishing surface of a polished member using the polishing liquid according to any one of [1] to

[12] .

[0041]

[15] A method for manufacturing a part, which obtains the part using a part to be ground by the grinding method described in

[14] .

[0042]

[16] A method for manufacturing a semiconductor component, which obtains a semiconductor component using a polished member polished by the polishing method described in

[14] .

[0043] Effects of the Invention

[0044] According to one aspect of the present invention, there is provided a polishing liquid which uses polyglycerol and can polish the outer edge of the inner area remaining on the polished surface except the outer peripheral portion at a sufficient polishing speed. According to another aspect of the present invention, there is provided a polishing liquid kit for obtaining the polishing liquid. According to another aspect of the present invention, there is provided a polishing method which uses the polishing liquid. According to another aspect of the present invention, there is provided a method for manufacturing a part which uses a polished part polished by the polishing method. According to another aspect of the present invention, there is provided a method for manufacturing a semiconductor part which uses a polished part polished by the polishing method. DETAILED DESCRIPTION

[0045] Hereinafter, embodiments of the present invention will be described in detail.

[0046] In this specification, the numerical range represented by "~" means a range including the numerical values ​​recorded before and after "~" as the minimum and maximum values, respectively. "Above A" in the numerical range refers to A and the range exceeding A. "Below A" in the numerical range refers to A and the range less than A. In the numerical range recorded in stages in this specification, the upper limit or lower limit of the numerical range of a certain stage can be arbitrarily combined with the upper limit or lower limit of the numerical range of another stage. In the numerical range recorded in this specification, the upper limit or lower limit of its numerical range can be replaced by the value shown in the embodiment. "A or B" can include either A and B, or both. Unless otherwise specified, the materials exemplified in this specification can be used alone or in combination of two or more. Regarding the content of each component in the composition, when there are multiple substances corresponding to each component in the composition, unless otherwise specified, it refers to the total amount of the multiple substances present in the composition. The term "film" includes a structure of a shape formed on a part in addition to a structure of a shape formed on the entire surface when observed in a top view. The term "step" includes not only independent steps but also steps that cannot be clearly distinguished from other steps as long as the intended effect of the step can be achieved. "Hydroxyl" does not include the OH structure included in the carboxyl group.

[0047] <Polishing fluid>

[0048] The polishing liquid involved in this embodiment (the first embodiment and the second embodiment. The same applies hereinafter) contains abrasive, an additive and water, and the additive contains (A) polyglycerol ((A) component), and (B) a compound having two or more nitrogen atoms bonded to a hydroxyalkyl group ((B) component). The additive of the polishing liquid involved in the first embodiment contains (A1) polyglycerol having a weight average molecular weight of 350 to 2800 ((A1) component) as the (A) component. The additive of the polishing liquid involved in the second embodiment contains (A2) polyglycerol having a hydroxyl value of 800 to 1000 mgKOH / g ((A2) component) as the (A) component.

[0049] The additive of the polishing liquid involved in this embodiment can be in the form of containing component (A1) but not containing component (A2), can also be in the form of containing component (A2) but not containing component (A1), can also be in the form of containing component (A1) and component (A2). The polishing liquid involved in this embodiment can be used as a polishing liquid for CMP, for example, can be used for polishing silicon oxide.

[0050] The polishing liquid involved in this embodiment can grind the outer edge of the inner area remaining on the polished surface except the outer periphery at a sufficient polishing speed (sufficiently high polishing speed). For example, it can grind the insulating material (for example, silicon oxide) in the outer edge of the inner area of ​​the polished surface at a sufficient polishing speed. According to the polishing liquid involved in this embodiment, in the evaluation method described in the examples described later, the polishing speed of silicon oxide as the outer edge of the inner area remaining on the polished surface except the outer periphery (the outer periphery 3 mm away from the outer periphery) (the portion of the inner area 27 mm away from the outer periphery (the portion 120 to 147 mm away from the center of the inner area)) can be, for example, 750 nm / min or more.

[0051] The main reason for being able to grind the outer edge of the inner area remaining outside the outer peripheral portion on the grinded surface at a sufficient grinding speed is not necessarily clear, but it is speculated as follows. However, the main reason is not limited to the following. That is, the (B) component is adsorbed on the grinded surface, so that the abrasive grains are more likely to be retained at the outer edge portion closer to the center of the grinded surface. In this case, if the abrasive grains are condensed in the outer edge portion, it is difficult for the abrasive grains to contribute to grinding, but by the presence of the (A) component, the agglomeration of the abrasive grains is suppressed, and the outer edge portion can be ground at a sufficient grinding speed.

[0052] (Abrasive particles)

[0053] The polishing liquid involved in this embodiment contains abrasive grains. The abrasive grains can contain cerium compounds (compounds containing cerium), aluminum oxide, silicon dioxide, titanium dioxide, zirconium oxide, magnesium oxide, mullite, silicon nitride, α-sialon ceramics, aluminum nitride, titanium nitride, silicon carbide, boron carbide, etc. From the perspective of easily grinding the outer edge of the inner area on the polished surface at a sufficient speed, the abrasive grains can contain cerium compounds. Cerium compounds can have a positive charge.

[0054] Examples of cerium compounds include cerium oxide (cerium oxide), cerium hydroxide (cerium hydroxide), cerium ammonium nitrate, cerium acetate, cerium sulfate hydrate, cerium bromate, cerium bromide, cerium chloride, cerium oxalate, cerium nitrate, cerium carbonate, etc. From the perspective of easily grinding the outer edge of the inner region on the surface to be ground at a sufficient speed, the abrasive grains may contain cerium oxide.

[0055] In the case where the abrasive contains a cerium compound, from the viewpoint of easily grinding the outer edge of the inner area on the surface to be ground at a sufficient speed, the content of the cerium compound in the abrasive can be 50 mass% or more, 70 mass% or more, 90 mass% or more, 95 mass% or more, 97 mass% or more, 98 mass% or more, or 99 mass% or more, based on the entire abrasive (the entire abrasive contained in the polishing liquid). The abrasive containing the cerium compound can be in a form substantially formed of the cerium compound (substantially 100 mass% of the abrasive is in the form of the cerium compound).

[0056] When the abrasive grains contain cerium oxide, the content of cerium oxide in the abrasive grains may be 50 mass % or more, 70 mass % or more, 90 mass % or more, 95 mass % or more, 97 mass % or more, 98 mass % or more, or 99 mass % or more, based on the entire abrasive grains (the entire abrasive grains contained in the polishing liquid), from the viewpoint of easily polishing the outer edge of the inner region on the polished surface at a sufficient speed. The abrasive grains containing cerium oxide may be in a form substantially composed of cerium oxide (substantially 100 mass % of the abrasive grains are in a form of cerium oxide).

[0057] From the viewpoint of easily grinding the outer edge of the inner area on the surface to be ground at a sufficient speed, the average particle size of the abrasive grains may be 50 nm or more, 70 nm or more, 100 nm or more, more than 100 nm, 105 nm or more, 110 nm or more, 115 nm or more, 120 nm or more, 125 nm or more, 130 nm or more, 135 nm or more, or 140 nm or more. From the viewpoint of easily suppressing the generation of grinding scratches, the average particle size of the abrasive grains may be 500 nm or less, 300 nm or less, 200 nm or less, 180 nm or less, 150 nm or less, or 140 nm or less. From these viewpoints, the average particle size of the abrasive grains may be 50 to 500 nm, 50 to 200 nm, 50 to 150 nm, 70 to 500 nm, 70 to 200 nm, 70 to 150 nm, 100 to 500 nm, 100 to 200 nm, or 100 to 150 nm.

[0058] The "average particle size of the abrasive grains" refers to the median value of the volume distribution obtained by measuring a slurry sample in which the abrasive grains are dispersed using a laser diffraction / scattering particle size distribution measuring device, and can be measured using a product name: Microtrac MT3300EXII manufactured by Microtrac BEL Corp. For example, the abrasive grains can be dispersed in water so that the content of the abrasive grains is 0.25 mass % based on the total mass of the sample to adjust the content of the abrasive grains, thereby preparing a sample, and the sample can be installed in a measuring device to measure the median value of the volume distribution. When measuring the particle size of the abrasive grains in the polishing liquid, the content of the abrasive grains in the polishing liquid can be adjusted so that the content of the abrasive grains is 0.25 mass % based on the total mass of the sample to prepare a sample, and the sample can be used to perform the measurement by the same method.

[0059] From the viewpoint of easily grinding the outer edge of the inner area on the surface to be ground at a sufficient speed, the content of the abrasive grains can be within the following ranges based on the total mass of the polishing liquid. The content of the abrasive grains can be 0.01 mass % or more, 0.05 mass % or more, 0.1 mass % or more, 0.15 mass % or more, 0.2 mass % or more, 0.25 mass % or more, 0.3 mass % or more, 0.35 mass % or more, 0.4 mass % or more, 0.45 mass % or more, or 0.5 mass % or more. The content of the abrasive grains can be 10 mass % or less, 8 mass % or less, 5 mass % or less, 4 mass % or less, 3 mass % or less, 2.5 mass % or less, 2 mass % or less, 1.5 mass % or less, 1 mass % or less, 0.8 mass % or less, 0.6 mass % or less, or 0.5 mass % or less. From these viewpoints, the abrasive content can be 0.01 to 10 mass%, 0.01 to 5 mass%, 0.01 to 2 mass%, 0.01 to 1 mass%, 0.05 to 10 mass%, 0.05 to 5 mass%, 0.05 to 2 mass%, 0.05 to 1 mass%, 0.1 to 10 mass%, 0.1 to 5 mass%, 0.1 to 2 mass% or 0.1 to 1 mass%.

[0060] (additive)

[0061] [(A) ingredient: polyglycerol)]

[0062] From the viewpoint of polishing the outer edge of the inner region on the polished surface at a sufficient polishing rate, the additive of the polishing liquid involved in the first embodiment contains (A1) polyglycerol having a weight average molecular weight of 350 to 2800 (component (A1)) as component (A). From the viewpoint of polishing the outer edge of the inner region on the polished surface at a sufficient polishing rate, the additive of the polishing liquid involved in the second embodiment contains (A2) polyglycerol having a hydroxyl value of 800 to 1000 mgKOH / g (component (A2)) as component (A).

[0063] From the viewpoint of easily polishing the outer edge of the inner region on the polished surface at a sufficient speed, the weight average molecular weight of the component (A1) may be within the following ranges. The weight average molecular weight of the component (A1) may be 400 or more, 450 or more, 500 or more, 550 or more, 600 or more, 650 or more, 700 or more, or 750 or more. The weight average molecular weight of the component (A1) may be 2600 or less, 2400 or less, 2200 or less, 2000 or less, less than 2000, 1800 or less, 1600 or less, 1500 or less, 1400 or less, 1200 or less, 1000 or less, less than 1000, 950 or less, 900 or less, 850 or less, 800 or less, or 750 or less. From these viewpoints, the weight average molecular weight of the component (A1) may be 350 to 1500, 350 to 1000, 500 to 2800, 500 to 1500, 500 to 1000, 700 to 2800, 700 to 1500 or 700 to 1000.

[0064] For example, the weight average molecular weight of the component (A1) can be measured using gel permeation chromatography (GPC: Gel Permeation Chromatography) under the following conditions.

[0065] [condition]

[0066] Sample: 20 μL

[0067] Standard polyethylene glycol: manufactured by Polymer Laboratories Ltd., standard polyethylene glycol (molecular weight: 106, 194, 440, 600, 1470, 4100, 7100, 10300, 12600 and 23000)

[0068] Detector: Manufactured by Showa Denko KK, RI-monitor, product name "Syodex-RI SE-61"

[0069] Pump: Made by Hitachi, Ltd., product name: "L-6000"

[0070] Column: Used by connecting the product names "GS-220HQ" and "GS-620HQ" manufactured by Showa Denko KK in sequence

[0071] Eluent: 0.4 mol / L sodium chloride aqueous solution

[0072] Measurement temperature: 30℃

[0073] Flow rate: 1.00mL / min

[0074] Measurement time: 45min

[0075] From the viewpoint of easily polishing the outer edge of the inner region on the polished surface at a sufficient speed, the hydroxyl value of the component (A2) may be within the following range. The hydroxyl value of the component (A2) may be 830 mgKOH / g or more, 850 mgKOH / g or more, 870 mgKOH / g or more, 880 mgKOH / g or more, or 900 mgKOH / g or more. The hydroxyl value of the component (A2) may be 980 mgKOH / g or less, 960 mgKOH / g or less, 950 mgKOH / g or less, 930 mgKOH / g or less, 910 mgKOH / g or less, or 900 mgKOH / g or less. From these viewpoints, the hydroxyl value of component (A2) may be 800 to 950 mgKOH / g, 800 to 900 mgKOH / g, 850 to 1000 mgKOH / g, 850 to 950 mgKOH / g, 850 to 900 mgKOH / g, 900 to 1000 mgKOH / g or 900 to 950 mgKOH / g. The hydroxyl value may be calculated by the following formula. As the degree of polymerization of the following formula, the average degree of polymerization may be used.

[0076] Hydroxyl value = 56110 × (degree of polymerization + 2) / (74 × degree of polymerization + 18)

[0077] From the viewpoint of easily polishing the outer edge of the inner region on the polished surface at a sufficient speed, the average degree of polymerization of glycerol in the component (A1) or the component (A2) may be within the following ranges. The average degree of polymerization may be 5 or more, 6 or more, 8 or more, or 10 or more. The average degree of polymerization may be 30 or less, 20 or less, 15 or less, 12 or less, or 10 or less. From these viewpoints, the average degree of polymerization may be 5 to 30, 8 to 20, 8 to 12, 10 to 30, or 5 to 10.

[0078] As the content of the component (A1) in the polishing liquid involved in the first embodiment or the content of the component (A2) in the polishing liquid involved in the second embodiment, from the viewpoint of easily polishing the outer edge of the inner area on the polished surface at a sufficient speed, the content A1 can be within the following range based on the total mass of the polishing liquid. The content of A1 can be 0.001 mass% or more, 0.005 mass% or more, 0.01 mass% or more, 0.03 mass% or more, 0.05 mass% or more, 0.08 mass% or more, 0.1 mass% or more, 0.12 mass% or more, 0.15 mass% or more, 0.18 mass% or more, or 0.2 mass% or more. The Al content may be 10 mass % or less, 8 mass % or less, 5 mass % or less, 3 mass % or less, 2 mass % or less, 1.5 mass % or less, 1 mass % or less, 0.8 mass % or less, 0.5 mass % or less, 0.45 mass % or less, 0.4 mass % or less, 0.35 mass % or less, 0.3 mass % or less, 0.25 mass % or less, or 0.2 mass % or less. From these viewpoints, the content A1 can be 0.001 to 10 mass%, 0.001 to 5 mass%, 0.001 to 1 mass%, 0.001 to 0.5 mass%, 0.01 to 10 mass%, 0.01 to 5 mass%, 0.01 to 1 mass%, 0.01 to 0.5 mass%, 0.05 to 10 mass%, 0.05 to 5 mass, 0.05 to 1 mass%, 0.05 to 0.5 mass%, 0.1 to 10 mass%, 0.1 to 5 mass, 0.1 to 1 mass% or 0.1 to 0.5 mass%.

[0079] As the content of the component (A1) in the polishing liquid involved in the first embodiment or the content of the component (A2) in the polishing liquid involved in the second embodiment, from the viewpoint of easily polishing the outer edge of the inner area on the polished surface at a sufficient speed, the content A2 can be within the following ranges relative to 100 parts by mass of the abrasive. The content A2 can be 1 part by mass or more, 5 parts by mass or more, 10 parts by mass or more, 15 parts by mass or more, 20 parts by mass or more, 25 parts by mass or more, 30 parts by mass or more, 35 parts by mass or more, or 40 parts by mass or more. The content A2 can be 500 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 150 parts by mass or less, 100 parts by mass or less, less than 100 parts by mass, 90 parts by mass or less, 80 parts by mass or less, 70 parts by mass or less, 65 parts by mass or less, 60 parts by mass or less, 55 parts by mass or less, 50 parts by mass or less, 45 parts by mass or less, or 40 parts by mass or less. From these viewpoints, the content A2 can be 1 to 500 parts by mass, 1 to 200 parts by mass, 1 to 50 parts by mass, 10 to 500 parts by mass, 10 to 200 parts by mass, 10 to 50 parts by mass, 30 to 500 parts by mass, 30 to 200 parts by mass or 30 to 50 parts by mass.

[0080] [Component (B): nitrogen-containing hydroxyalkyl compound]

[0081] From the viewpoint of grinding the outer edge of the inner area on the grinded surface at a sufficient grinding speed, the additive of the grinding liquid involved in this embodiment contains a compound having two or more nitrogen atoms bonded with a hydroxyalkyl group (nitrogen-containing hydroxyalkyl compound) as the (B) component. Since the (B) component can have a positive charge due to the dissociation of the hydrogen atoms of the hydroxyalkyl group, it can be adsorbed on the negatively charged grinded surface (for example, the grinded surface of silicon oxide). In this case, the (B) component is easily adsorbed on the center of the grinded surface, so if the abrasive has a positive charge, the abrasive is likely to be retained at the outer edge portion closer to the center of the grinded surface. In the (B) component, the hydroxyalkyl group is directly bonded to the nitrogen atom, and the hydroxyl group is directly bonded to the alkyl group directly bonded to the nitrogen atom. In the (B) component, as the hydroxyalkyl group bonded to the nitrogen atom, an alkyl group having no substituent other than a hydroxyl group can be used.

[0082] From the viewpoint of facilitating polishing the outer edge of the inner region of the polished surface at a sufficient rate, the component (B) may contain a compound having a nitrogen atom to which two hydroxyalkyl groups are bonded, or a compound having two or more nitrogen atoms to which two hydroxyalkyl groups are bonded.

[0083] From the viewpoint of easily polishing the outer edge of the inner region on the polished surface at a sufficient rate, the number of nitrogen atoms in one molecule of the component (B) may be 2 to 5, 2 to 4, or 2 to 3. From the viewpoint of easily polishing the outer edge of the inner region on the polished surface at a sufficient rate, the number of hydroxyl groups in one molecule of the component (B) may be 2 to 6, 2 to 5, 2 to 4, 3 to 6, 3 to 5, 3 to 4, 4 to 6, or 4 to 5.

[0084] From the viewpoint of facilitating the polishing of the outer edge of the inner region on the polished surface at a sufficient rate, the component (B) may have a hydroxyalkyl group having 1 to 4, 2 to 4, 3 to 4, 1 to 3, 2 to 3, or 1 to 2 carbon atoms as the hydroxyalkyl group bonded to the nitrogen atom. From the viewpoint of facilitating the polishing of the outer edge of the inner region on the polished surface at a sufficient rate, the component (B) may have a hydroxyalkyl group having 1 to 3 or 1 to 2 hydroxy groups as the hydroxyalkyl group bonded to the nitrogen atom.

[0085] From the viewpoint of easily polishing the outer edge of the inner region on the polished surface at a sufficient rate, the component (B) may have an alkylene group between two nitrogen atoms to which a hydroxyalkyl group is bonded. From the viewpoint of easily polishing the outer edge of the inner region on the polished surface at a sufficient rate, the number of carbon atoms of the alkylene group may be 1 to 4, 2 to 4, 1 to 3, 2 to 3 or 1 to 2.

[0086] From the viewpoint of facilitating polishing of the outer edge portion of the inner region on the polishing surface at a sufficient rate, the component (B) may contain a compound represented by the following general formula (I).

[0087]

[0088] [wherein n is an integer greater than 1, R 11 , R 12 , R 13 and R 14 Each independently represents a hydrogen atom or an organic group, R 11 and R 12 One or both of them are hydroxyalkyl, R 13 and R 14 One or both of them are hydroxyalkyl.]

[0089] As the carbon number of the alkylene group between two nitrogen atoms bonded to the hydroxyalkyl group, n may be within the above range. The organic group may be a substituted or unsubstituted alkyl group, a hydroxyalkyl group, or a group having a nitrogen atom bonded to the hydroxyalkyl group. Examples of the substituent of the alkyl group include a hydroxyl group, a carboxyl group, an amino group, a sulfonic acid group, and a nitro group. 11 , R 12 , R 13 or R 14 In the case of a hydroxyalkyl group, the number of carbon atoms of the hydroxyalkyl group bonded to the nitrogen atom may be within the above range.

[0090] Component (B) includes ethylenediaminetetraethanol (THEED: 2,2',2",2"'-ethylenediaminetetraethanol (also known as N,N,N',N'-tetrakis(2-hydroxyethyl)ethylenediamine), ethylenediaminetetrapropanol (EDTP: 1,1',1",1"'-ethanedinitriletetra-2-propanol (also known as N,N,N',N'-tetrakis(2-hydroxypropyl)ethylenediamine), and N,N,N',N",N"-penta(2-hydroxypropyl)diethylenetriamine. From the viewpoint of easily grinding the outer edge of the inner region on the surface to be ground at a sufficient speed, the component (B) may contain at least one selected from the group consisting of ethylenediaminetetraethanol and ethylenediaminetetrapropanol, may contain ethylenediaminetetraethanol, and may contain ethylenediaminetetrapropanol. From the viewpoint of easily grinding the outer edge of the inner region on the surface to be ground at a sufficient speed, the component (B) may contain a compound having no carboxyl group.

[0091] From the viewpoint of facilitating the polishing of the outer edge of the inner region on the polished surface at a sufficient speed, the molecular weight of the component (B) may be within the following range. The molecular weight of the component (B) may be 50 or more, 60 or more, 70 or more, 80 or more, 85 or more, 90 or more, 100 or more, 110 or more, 120 or more, 123 or more, 125 or more, 130 or more, 140 or more, 148 or more, 150 or more, 160 or more, 170 or more, 180 or more, 200 or more, 210 or more, 230 or more, 250 or more, more than 250 or 280 or more. The molecular weight of the component (B) may be 1000 or less, less than 1000, 900 or less, 800 or less, 700 or less, 600 or less, 500 or less, 400 or less, 350 or less, 300 or less, 280 or less, 250 or less, less than 250 or 240 or less. From these viewpoints, the molecular weight of the component (B) may be 50-1000, 50-500, 50-300, 50-250, 200-1000, 200-500, 200-300, 200-250, 250-1000, 250-500 or 250-300.

[0092] As the content of the component (B), the content of ethylenediaminetetraethanol or the content of ethylenediaminetetrapropanol, from the viewpoint of easily polishing the outer edge of the inner region on the polished surface at a sufficient speed, the content B1 can be within the following ranges based on the total mass of the polishing liquid. The content B1 can be 0.001 mass % or more, 0.003 mass % or more, 0.005 mass % or more, 0.008 mass % or more, 0.01 mass % or more, 0.012 mass % or more, 0.015 mass % or more, 0.018 mass % or more, or 0.02 mass % or more. The content B1 may be 5% by mass or less, 3% by mass or less, 1% by mass or less, 0.5% by mass or less, 0.4% by mass or less, 0.3% by mass or less, 0.2% by mass or less, 0.15% by mass or less, 0.1% by mass or less, 0.08% by mass or less, 0.06% by mass or less, 0.05% by mass or less, 0.045% by mass or less, 0.04% by mass or less, 0.035% by mass or less, 0.03% by mass or less, 0.025% by mass or less, or 0.02% by mass or less. From these viewpoints, the content B1 may be 0.001 to 5% by mass, 0.001 to 1% by mass, 0.001 to 0.1% by mass, 0.005 to 5% by mass, 0.005 to 1% by mass, 0.005 to 0.1% by mass, 0.01 to 5% by mass, 0.01 to 1% by mass, or 0.01 to 0.1% by mass.

[0093] As the content of the component (B), the content of ethylenediaminetetraethanol or the content of ethylenediaminetetrapropanol, from the viewpoint of easily grinding the outer edge of the inner area on the polished surface at a sufficient speed, the content B2 can be within the following ranges relative to 100 parts by mass of the abrasive. The content B2 can be 0.1 parts by mass or more, 0.5 parts by mass or more, 1 part by mass or more, 1.5 parts by mass or more, 2 parts by mass or more, 2.5 parts by mass or more, 3 parts by mass or more, 3.5 parts by mass or more, or 4 parts by mass or more. The content B2 can be 100 parts by mass or less, less than 100 parts by mass, 80 parts by mass or less, 60 parts by mass or less, 50 parts by mass or less, 40 parts by mass or less, 30 parts by mass or less, 20 parts by mass or less, 10 parts by mass or less, 8 parts by mass or less, 6 parts by mass or less, 5 parts by mass or less, or 4 parts by mass or less. From these viewpoints, the content B2 may be 0.1 to 100 parts by mass, 0.1 to 50 parts by mass, 0.1 to 10 parts by mass, 0.5 to 100 parts by mass, 0.5 to 50 parts by mass, 0.5 to 10 parts by mass, 1 to 100 parts by mass, 1 to 50 parts by mass or 1 to 10 parts by mass.

[0094] As the content of the component (B), the content of ethylenediaminetetraethanol or the content of ethylenediaminetetrapropanol, from the viewpoint of easily polishing the outer edge of the inner area on the polished surface at a sufficient speed, the content B3 can be within the following ranges relative to 100 parts by mass of the component (A1) or 100 parts by mass of the component (A2). The content B3 can be 0.1 parts by mass or more, 0.5 parts by mass or more, 1 part by mass or more, 2 parts by mass or more, 3 parts by mass or more, 4 parts by mass or more, 5 parts by mass or more, 6 parts by mass or more, 7 parts by mass or more, 8 parts by mass or more, 9 parts by mass or more, or 10 parts by mass or more. The content B3 can be 200 parts by mass or less, 150 parts by mass or less, 100 parts by mass or less, less than 100 parts by mass, 80 parts by mass or less, 60 parts by mass or less, 50 parts by mass or less, 45 parts by mass or less, 40 parts by mass or less, 35 parts by mass or less, 30 parts by mass or less, 25 parts by mass or less, 20 parts by mass or less, 15 parts by mass or less, or 10 parts by mass or less. From these viewpoints, the content B3 may be 0.1 to 200 parts by mass, 0.1 to 50 parts by mass, 0.1 to 30 parts by mass, 1 to 200 parts by mass, 1 to 50 parts by mass, 1 to 30 parts by mass, 5 to 200 parts by mass, 5 to 50 parts by mass or 5 to 30 parts by mass.

[0095] [4-Pyrone compounds]

[0096] From the viewpoint of easily grinding the outer edge of the inner area on the polished surface at a sufficient speed while improving the in-plane uniformity of the grinding speed, the additive of the polishing liquid involved in this embodiment may contain a 4-pyrone compound represented by the following general formula (1) (hereinafter referred to as "4-pyrone compound" as the case may be). The additive of the polishing liquid involved in this embodiment may not contain a 4-pyrone compound.

[0097]

[0098] [Wherein, X 11 , X 12 and X 13 Each independently represents a hydrogen atom or a monovalent substituent.]

[0099] 4-pyrone compounds are compounds having a structure in which a hydroxyl group is bonded to a carbon atom adjacent to a carbon atom of a carbonyl group. "4-pyrone compounds" are heterocyclic compounds having an oxy group and a carbonyl group, and having a γ-pyrone ring (6-membered ring) in which the carbonyl group is located at the 4th position relative to the oxy group. Regarding 4-pyrone compounds, a hydroxyl group is bonded to a carbon atom adjacent to a carboxyl group in the γ-pyrone ring, and a substituent other than a hydrogen atom may be substituted on the other carbon atoms.

[0100] In the general formula (1), X 11 , X 12 and X 13 Each independently represents a hydrogen atom or a monovalent substituent. Examples of the monovalent substituent include an aldehyde group, a hydroxyl group, a carboxyl group, a carboxylate group, a sulfonic acid group, a phosphoric acid group, a bromine atom, a chlorine atom, an iodine atom, a fluorine atom, a nitro group, a hydrazine group, an alkyl group (e.g., an alkyl group having 1 to 8 carbon atoms), an aryl group (e.g., an aryl group having 6 to 12 carbon atoms), and an alkenyl group (e.g., an alkenyl group having 1 to 8 carbon atoms). The alkyl group, the aryl group, and the alkenyl group may be substituted with OH, COOH, Br, Cl, I, NO2, and the like. 11 , X 12 and X 13 In the case of 11 and X 12 Can be a substituent. 11 , X 12 and X 13 At least two of them may be hydrogen atoms.

[0101] From the viewpoint of easily polishing the outer edge of the inner area on the polished surface at a sufficient speed while improving the in-plane uniformity of the polishing speed, the 4-pyrone compound may contain at least one selected from the group consisting of 3-hydroxy-2-methyl-4-pyrone (also known as 3-hydroxy-2-methyl-4H-pyrone-4-one, maltol), 5-hydroxy-2-(hydroxymethyl)-4-pyrone (also known as 5-hydroxy-2-(hydroxymethyl)-4H-pyrone-4-one, kojic acid) and 2-ethyl-3-hydroxy-4-pyrone (also known as 2-ethyl-3-hydroxy-4H-pyrone-4-one), and may also contain 3-hydroxy-2-methyl-4-pyrone.

[0102] From the viewpoint of easily grinding the outer edge of the inner area on the polished surface at a sufficient speed while improving the in-plane uniformity of the polishing speed, the content of the 4-pyrone compound can be within the following range based on the total mass of the polishing liquid. The content of the 4-pyrone compound can be 0.001 mass% or more, 0.005 mass% or more, 0.01 mass% or more, 0.015 mass% or more, 0.02 mass% or more, 0.025 mass% or more, 0.03 mass% or more or 0.034 mass% or more. The content of the 4-pyrone compound can be 5 mass% or less, 3 mass% or less, 1 mass% or less, 0.8 mass% or less, 0.5 mass% or less, 0.3 mass% or less, 0.2 mass% or less, 0.15 mass% or less, 0.1 mass% or less, 0.08 mass% or less, 0.05 mass% or less, 0.04 mass% or less or 0.035 mass% or less. From these viewpoints, the content of 4-pyrone compounds can be 0.001 to 5 mass%, 0.001 to 1 mass%, 0.001 to 0.1 mass%, 0.01 to 5 mass%, 0.01 to 1 mass%, 0.01 to 0.1 mass%, 0.03 to 5 mass%, 0.03 to 1 mass% or 0.03 to 0.1 mass%.

[0103] From the viewpoint of improving the in-plane uniformity of the polishing speed while making it easy to polish the outer edge of the inner area on the polished surface at a sufficient speed, the content of the 4-pyrone compound can be within the following range relative to 100 parts by mass of the abrasive. The content of the 4-pyrone compound can be 0.1 parts by mass or more, 0.5 parts by mass or more, 1 part by mass or more, 2 parts by mass or more, 3 parts by mass or more, 4 parts by mass or more, 5 parts by mass or more, or 6 parts by mass or more. The content of the 4-pyrone compound can be 100 parts by mass or less, less than 100 parts by mass, 80 parts by mass or less, 60 parts by mass or less, 50 parts by mass or less, 40 parts by mass or less, 30 parts by mass or less, 25 parts by mass or less, 20 parts by mass or less, 15 parts by mass or less, 10 parts by mass or less, or 8 parts by mass or less. From these viewpoints, the content of 4-pyrone compounds can be 0.1 to 100 parts by mass, 0.1 to 50 parts by mass, 0.1 to 10 parts by mass, 1 to 100 parts by mass, 1 to 50 parts by mass, 1 to 10 parts by mass, 5 to 100 parts by mass, 5 to 50 parts by mass or 5 to 10 parts by mass.

[0104] From the viewpoint of improving the in-plane uniformity of the polishing speed while easily polishing the outer edge of the inner area on the polished surface at a sufficient speed, the content of the 4-pyrone compound can be within the following range relative to 100 parts by mass of the (A1) component or 100 parts by mass of the (A2) component. The content of the 4-pyrone compound can be 0.1 parts by mass or more, 0.5 parts by mass or more, 1 part by mass or more, 3 parts by mass or more, 5 parts by mass or more, 8 parts by mass or more, 10 parts by mass or more, 12 parts by mass or more, or 15 parts by mass or more. The content of the 4-pyrone compound can be 100 parts by mass or less, less than 100 parts by mass, 80 parts by mass or less, 60 parts by mass or less, 50 parts by mass or less, 40 parts by mass or less, 30 parts by mass or less, 25 parts by mass or less, 20 parts by mass or less, or 18 parts by mass or less. From these viewpoints, the content of 4-pyrone compounds can be 0.1 to 100 parts by mass, 0.1 to 50 parts by mass, 0.1 to 20 parts by mass, 1 to 100 parts by mass, 1 to 50 parts by mass, 1 to 20 parts by mass, 10 to 100 parts by mass, 10 to 50 parts by mass or 10 to 20 parts by mass.

[0105] From the viewpoint of easily grinding the outer edge of the inner area on the polished surface at a sufficient speed while improving the in-plane uniformity of the grinding speed, the content of the 4-pyrone compound can be within the following range relative to 100 parts by mass of the component (B). The content of the 4-pyrone compound can be 10 parts by mass or more, 30 parts by mass or more, 50 parts by mass or more, 80 parts by mass or more, 100 parts by mass or more, more than 100 parts by mass, 120 parts by mass or more, or 150 parts by mass or more. The content of the 4-pyrone compound can be 1000 parts by mass or less, 800 parts by mass or less, 600 parts by mass or less, 500 parts by mass or less, 400 parts by mass or less, 350 parts by mass or less, 300 parts by mass or less, 250 parts by mass or less, 200 parts by mass or less, or 180 parts by mass or less. From these viewpoints, the content of 4-pyrone compounds can be 10 to 1000 parts by mass, 10 to 500 parts by mass, 10 to 200 parts by mass, 50 to 1000 parts by mass, 50 to 500 parts by mass, 50 to 200 parts by mass, 100 to 1000 parts by mass, 100 to 500 parts by mass or 100 to 200 parts by mass.

[0106] [Saturated monocarboxylic acid]

[0107] The additive of the polishing liquid according to the present embodiment may contain a saturated monocarboxylic acid. By using a saturated monocarboxylic acid, good dispersibility of the abrasive grains can be obtained and the polishing rate ratio (for example, silicon oxide / silicon nitride) can be easily adjusted.

[0108] Examples of the saturated monocarboxylic acid include acetic acid, propionic acid, butyric acid, isobutyric acid, valeric acid, isovaleric acid, trimethylacetic acid, 2-methylbutyric acid, hexanoic acid, 2-methylvaleric acid, 4-methylvaleric acid, 2,3-dimethylbutyric acid, 2-ethylbutyric acid, 2,2-dimethylbutyric acid, and 3,3-dimethylbutyric acid. From the viewpoint of easily obtaining the above-mentioned addition effect of the saturated monocarboxylic acid, the saturated monocarboxylic acid may contain an aliphatic carboxylic acid. From the viewpoint of easily obtaining the above-mentioned addition effect of the saturated monocarboxylic acid, the saturated monocarboxylic acid may contain a saturated monocarboxylic acid having 2 to 6 carbon atoms, and may contain at least one selected from the group consisting of acetic acid and propionic acid.

[0109] From the viewpoint of easily obtaining the above-mentioned addition effect of saturated monocarboxylic acid, the content of saturated monocarboxylic acid can be within the following ranges based on the total mass of the polishing liquid. The saturated monocarboxylic acid content can be 0.001 mass % or more, 0.005 mass % or more, 0.01 mass % or more, 0.03 mass % or more, 0.05 mass % or more, 0.08 mass % or more or 0.09 mass % or more. The saturated monocarboxylic acid content can be 5 mass % or less, 3 mass % or less, 1 mass % or less, 0.8 mass % or less, 0.5 mass % or less, 0.4 mass % or less, 0.3 mass % or less, 0.2 mass % or less or 0.1 mass % or less. From these viewpoints, the content of the saturated monocarboxylic acid may be 0.001 to 5 mass %, 0.001 to 1 mass %, 0.001 to 0.5 mass %, 0.01 to 5 mass %, 0.01 to 1 mass %, 0.01 to 0.5 mass %, 0.05 to 5 mass %, 0.05 to 1 mass % or 0.05 to 0.5 mass %.

[0110] [Other additives]

[0111] The additives of the polishing liquid involved in this embodiment may further contain other components (components not belonging to the above-mentioned components) according to the desired characteristics. Such components include nonionic polymers; cationic compounds; pH adjusters described below; polar solvents such as ethanol and acetone; cyclic monocarboxylic acids, etc.

[0112] The polishing liquid involved in this embodiment may contain a compound a having a molecular weight of 100,000 or less and having 4 or more hydroxyl groups, or may not contain compound a. The polishing liquid involved in this embodiment may contain a compound b having 4 or more amino groups, or may not contain compound b. The content of compound b may be 0.001% by mass or less, less than 0.001% by mass, 0.0001% by mass or less, 0.00001% by mass or less, or substantially 0% by mass, based on the total mass of the polishing liquid. The mass ratio of the content of compound a to the content of compound b (compound a / compound b) may be 0.10 or less or less than 0.10.

[0113] (water)

[0114] The water is not particularly limited, and may contain at least one selected from the group consisting of deionized water, ion-exchanged water, and ultrapure water.

[0115] (pH)

[0116] From the viewpoint of easily polishing the outer edge of the inner region on the polished surface at a sufficient speed, the pH of the polishing liquid involved in the present embodiment can be within the following range. The pH can be 10.00 or less, less than 10.00, 9.50 or less, 9.00 or less, less than 9.00, 8.50 or less, 8.00 or less, less than 8.00, 7.50 or less, 7.00 or less, less than 7.00, 6.50 or less, 6.00 or less, less than 6.00, 5.50 or less, less than 5.50, 5.00 or less, less than 5.00, 4.50 or less, 4.30 or less, 4.20 or less, 4.10 or less, 4.00 or less, less than 4.00, 3.98 or less, 3.96 or less, 3.95 or less, 3.92 or less, or 3.90 or less. The pH may be 1.00 or more, more than 1.00, 1.50 or more, 2.00 or more, more than 2.00, 2.50 or more, 3.00 or more, more than 3.00, 3.50 or more, 3.60 or more, 3.70 or more, 3.80 or more, 3.85 or more, 3.90 or more, 3.92 or more, 3.95 or more, or 3.96 or more. From these viewpoints, the pH may be 1.00 to 10.00, 1.00 to 6.00, 1.00 to 5.00, 2.00 to 10.00, 2.00 to 6.00, 2.00 to 5.00, 3.00 to 10.00, 3.00 to 6.00, or 3.00 to 5.00. The pH may be measured by the method described in the Examples.

[0117] The pH of the polishing liquid can change depending on the type of compound used as an additive, so in order to adjust the pH to the above range, a pH adjusting agent can be used. As a pH adjusting agent, there is no particular limitation, and acids such as nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid, and boric acid can be cited; bases such as sodium hydroxide, ammonia (for example, ammonia water), potassium hydroxide, and calcium hydroxide can be used to adjust the pH. The above-mentioned additives such as saturated monocarboxylic acids can be used to adjust the pH. From the viewpoint of improving productivity, the polishing liquid can be prepared without using a pH adjusting agent, and the polishing liquid can be directly applied to grinding.

[0118] <Preparation and use of polishing liquid>

[0119] The polishing liquid involved in this embodiment can be classified into (a) ordinary type, (b) concentrated type, (c) multi-liquid type (for example, two-liquid type, polishing liquid set), etc., and the preparation method and usage method are different according to the type.

[0120] (a) Ordinary type is a polishing liquid that can be used directly during polishing without any pre-treatment such as dilution. (a) Ordinary type can be obtained by dispersing or dissolving abrasive grains and additives in water.

[0121] The (b) concentrated type is a polishing liquid in which the constituent components are concentrated compared to the (a) normal type in consideration of the convenience of storage or transportation. The (b) concentrated type is diluted with water before use to adjust the constituent components to the desired content.

[0122] (c) The multi-liquid type is a polishing liquid prepared in a state where the constituent components are divided into a plurality of liquids during storage or transportation (for example, a state where the constituent components are divided into a first liquid containing one component and a second liquid containing other components), and when used, these liquids are mixed and used. The components contained in each liquid are arbitrary.

[0123] The (c) multi-liquid type is, for example, a polishing liquid set in which a polishing liquid is obtained by mixing a first liquid (slurry) and a second liquid (additive liquid). For example, in the (c) multi-liquid type (polishing liquid set), the constituent components of the polishing liquid are divided into a first liquid and a second liquid for storage, the first liquid contains abrasive and water, and the second liquid contains at least one of the additives including the (A) component and the (B) component and water. In the first form of the (c) multi-liquid type, the first liquid contains abrasive and water, and the second liquid contains the (A) component, the (B) component and water. In the second form of the (c) multi-liquid type, the first liquid contains abrasive, the (A) component and water, and the second liquid contains the (B) component and water. In the third form of the (c) multi-liquid type, the first liquid contains abrasive, the (B) component and water, and the second liquid contains the (A) component and water. The first liquid and the second liquid may contain other components used as needed. The constituent components of the polishing liquid may be divided into three or more liquids.

[0124] (c) A multi-liquid polishing liquid is useful when a combination of components has the tendency that the polishing characteristics decrease in a short time due to agglomeration of abrasive particles when mixed. From the perspective of reducing the cost of storage and transportation, at least one of the liquids (first liquid, second liquid, etc.) can be a concentrated type. In this case, when using the polishing liquid, it is sufficient to mix the liquids with water.

[0125] <Grinding method>

[0126] The polishing method involved in this embodiment includes a polishing step of polishing the polished surface of the polished component using the polishing liquid involved in this embodiment. The polishing liquid used in the polishing step can be a polishing liquid obtained by mixing a plurality of liquids (e.g., the first liquid and the second liquid) in the above-mentioned polishing liquid set. That is, the polishing method involved in this embodiment may include a polishing step of polishing the polished surface of the polished component using a polishing liquid obtained by mixing a plurality of liquids (e.g., the first liquid and the second liquid) in the above-mentioned polishing liquid set.

[0127] The grinding process may be a process of supplying the grinding liquid involved in the present embodiment between the part to be ground and the grinding part (grinding part, grinding pad, etc.), and grinding the grinding surface of the part to be ground by the grinding part. The grinding method involved in the present embodiment can be used to grind the silicon oxide film of the part to be ground having a silicon oxide film on the surface. Therefore, the grinding surface may contain silicon oxide, and the grinding process may be a process of supplying the grinding liquid involved in the present embodiment between the silicon oxide film and the grinding part in the part to be ground having a silicon oxide film on the surface, and grinding the silicon oxide film by the grinding part. The grinding process may be a process of grinding the inner area (e.g., the outer edge of the inner area) remaining on the grinding surface of the part to be ground except the peripheral part, or may be a process of grinding the inner area (e.g., the outer edge of the inner area) remaining on the grinding surface of the silicon oxide film except the peripheral part.

[0128] <Manufacturing method, etc.>

[0129] The manufacturing method of the part involved in the present embodiment includes a part manufacturing process, which uses the part to be ground by the grinding method involved in the present embodiment to obtain the part. The part involved in the present embodiment is a part obtained by the manufacturing method of the part involved in the present embodiment. The part involved in the present embodiment is not particularly limited, and can be an electronic part (for example, a semiconductor part such as a semiconductor package), a wafer (for example, a semiconductor wafer), or a chip (for example, a semiconductor chip). As one form of the manufacturing method of the part involved in the present embodiment, in the manufacturing method of the electronic part involved in the present embodiment, the electronic part is obtained by using the part to be ground by the grinding method involved in the present embodiment. As one form of the manufacturing method of the part involved in the present embodiment, in the manufacturing method of the semiconductor part involved in the present embodiment, the semiconductor part (for example, a semiconductor package) is obtained by using the part to be ground by the grinding method involved in the present embodiment. The manufacturing method of the part involved in the present embodiment may include a grinding process of grinding the part to be ground by the grinding method involved in the present embodiment before the part manufacturing process.

[0130] In the manufacturing method of the part involved in the present embodiment, as one form of the part manufacturing process, a singulation process may be included, which is a process of singulating the polished part polished by the polishing method involved in the present embodiment. The singulation process may be, for example, a process of obtaining chips (for example, semiconductor chips) by cutting a wafer (for example, a semiconductor wafer) polished by the polishing method involved in the present embodiment. As one form of the manufacturing method of the part involved in the present embodiment, the manufacturing method of the electronic part involved in the present embodiment may include a process of obtaining electronic parts (for example, semiconductor parts) by singulating the polished part polished by the polishing method involved in the present embodiment. As one form of the manufacturing method of the part involved in the present embodiment, the manufacturing method of the semiconductor part involved in the present embodiment may include a process of obtaining semiconductor parts (for example, semiconductor packages) by singulating the polished part polished by the polishing method involved in the present embodiment.

[0131] In the manufacturing method of the parts involved in the present embodiment, as a form of the parts manufacturing process, a connection process may be included, which connects (for example, electrically connects) the polished part polished by the polishing method involved in the present embodiment with other connected bodies. The connected body connected to the polished part polished by the polishing method involved in the present embodiment is not particularly limited, and can be the polished part polished by the polishing method involved in the present embodiment, or can be a connected body different from the polished part polished by the polishing method involved in the present embodiment. In the connection process, the polished part and the connected body can be directly connected (the polished part and the connected body are connected in a state of contact), or the polished part and the connected body can be connected via other parts (conductive parts, etc.). The connection process can be performed before the singulation process, after the singulation process, or before and after the singulation process.

[0132] The connecting process may be a process of connecting the polished surface of the polished component polished by the polishing method involved in the present embodiment and the connected body, or may be a process of connecting the connecting surface of the polished component polished by the polishing method involved in the present embodiment and the connecting surface of the connected body. The connecting surface of the polished component may be the polished surface polished by the polishing method involved in the present embodiment. Through the connecting process, a connected body having a polished component and a connected body can be obtained. In the connecting process, when the connecting surface of the polished component has a metal part, the connected body can be brought into contact with the metal part. In the connecting process, when the connecting surface of the polished component has a metal part, and when the connecting surface of the connected body has a metal part, the metal parts can be brought into contact with each other. The metal part may contain copper, for example.

[0133] The device according to the present embodiment (for example, an electronic device such as a semiconductor device) includes at least one selected from the group consisting of a member to be polished by the polishing method according to the present embodiment and the component according to the present embodiment.

[0134] Example

[0135] Hereinafter, the present invention will be described in further detail based on examples, but the present invention is not limited to these examples.

[0136] <Production of cerium oxide powder>

[0137] 40 kg of cerium carbonate hydrate was divided into 10 aluminum containers and sintered at 830°C in air for 2 hours to obtain a total of 20 kg of yellow-white powder. Phase identification of the powder was performed by X-ray diffraction, confirming that the powder contained polycrystalline cerium oxide. SEM observation showed that the particle size of the powder obtained by sintering was in the range of 20 to 100 μm. Next, cerium oxide powder was obtained by dry-crushing 20 kg of cerium oxide powder using a jet mill. The specific surface area of ​​the cerium oxide powder after pulverization was 9.4 m 2 / g. The specific surface area was measured by the BET method.

[0138] <Preparation of slurry>

[0139] 15.0 kg of the cerium oxide powder obtained above and 84.5 kg of deionized water were placed in a container and mixed. Then, 0.03 kg of acetic acid was added and stirred for 10 minutes to obtain a cerium oxide mixed solution. The cerium oxide mixed solution was delivered to another container over 30 minutes. During this period, the cerium oxide mixed solution was irradiated with ultrasound at an ultrasonic frequency of 400 kHz in the delivery pipe.

[0140] 800 g ± 8 g of the cerium oxide mixed solution fed by ultrasonic irradiation was placed in each of four 1000 mL polyethylene containers. The cerium oxide mixed solution in each container was centrifuged for 20 minutes under the condition that the centrifugal force applied to the periphery became 500 G. After centrifugation, the supernatant portion of the container was collected to obtain a slurry. The slurry contained about 10.0 mass % of cerium oxide particles (abrasive grains) based on the total mass.

[0141] The slurry was diluted with pure water so that the abrasive content (based on the total mass of the sample) was 0.25 mass %, thereby obtaining a sample for particle size measurement. The average particle size of the abrasive was measured using a laser diffraction / scattering particle size distribution analyzer (Microtrac BEL Corp., product name: Microtrac MT3300EXII), and the average particle size was 140 nm.

[0142] <Preparation of polishing fluid>

[0143] A polishing liquid (polishing liquid for CMP) was obtained by mixing the above slurry, the components of Table 1, propionic acid and deionized water. Based on the total amount of the polishing liquid, the content of abrasive grains was 0.5% by mass, the content of component A (polyglycerol) was 0.2% by mass, the content of component B (EDTP or THEED) was 0.02% by mass (except for Comparative Example 2), the content of maltol was 0.034% by mass (except for Example 2), the content of propionic acid was 0.09% by mass, and the content of acetic acid (acetic acid mixed when preparing the above slurry) was 0.001% by mass.

[0144] The details of each component in the table are as follows.

[0145] PGL1: Polyglycerol, manufactured by Sakamoto Yakuhin Kogyo Co., Ltd., product name Polyglycerol #310, tetramer, weight average molecular weight 310, hydroxyl value 1050 mgKOH / g

[0146] PGL2: Polyglycerol, manufactured by Sakamoto Yakuhin Kogyo Co., Ltd., product name Polyglycerol #750, decamer, weight average molecular weight 750, hydroxyl value 900 mgKOH / g

[0147] PGL3: polyglycerol, manufactured by Daicel Corporation, product name PGL XPW, tetramer, weight average molecular weight 2.9×10 3 , hydroxyl value 791mgKOH / g

[0148] EDTP: 1,1',1",1"'-ethylenediaminetetra-2-propanol

[0149] THEED: 2,2',2",2"'-ethylenediaminetetraethanol

[0150] <pH measurement>

[0151] (pH of grinding liquid)

[0152] The pH of the polishing liquid was measured under the following conditions. The results are shown in Table 1.

[0153] Measurement temperature: 25℃

[0154] Measuring device: HORIBA, Ltd. Product name: Model (D-71)

[0155] Determination method: Phthalate pH standard solution (pH: 4.01), neutral phosphate pH standard solution (pH: 6.86) and borate pH standard solution (pH: 9.18) were used as pH standard solutions. After the pH meter was calibrated at 3 points, the electrode of the pH meter was placed in the grinding liquid, and the pH was measured by the measurement device after it had stabilized for more than 2 minutes.

[0156] <Evaluation of polishing characteristics>

[0157] (Preparation of Evaluation Wafer)

[0158] As a blanket wafer, a 300 mm diameter (round shape) blank wafer having a silicon oxide film (TEOS oxide film, initial film thickness: 1000 nm) on the surface was prepared.

[0159] (Grinding Step)

[0160] The evaluation wafer was ground using a grinding device (manufactured by Ebara Corporation, product name: F-REX300X). The evaluation wafer was set on a support with an adsorption pad. A porous urethane resin polishing pad (manufactured by DuPont, product name: IK4250H) was attached to a grinding platform with a diameter of 700 mm.

[0161] The holder was placed on the polishing pad with the polished surface of the evaluation wafer facing downward. The fixing ring pressure and the membrane pressure were set to 34 kPa and 21 kPa, respectively.

[0162] Then, the polishing liquid was dripped onto the polishing pad attached to the polishing platform at a flow rate of 250 mL / min, and the polishing platform and the evaluation wafer were respectively heated for 93 min. -1 and 87min -1 The polished surface was polished by rotating the wafer. The polishing time was 20 seconds. Then, the polished evaluation wafer was thoroughly cleaned with pure water using a polyvinyl alcohol brush and then dried.

[0163] (Evaluation of polishing speed)

[0164] Using an optical interference film thickness measuring device (manufactured by Nova Ltd., product name: nova i500), the film thickness variation of multiple measuring points in the outer edge of the inner region (the part of the inner region 27mm away from the outer periphery) of the silicon oxide film except the outer periphery 3mm away from the outer periphery was measured, and the polishing speed of each measuring point was obtained. About the measuring point, in the diameter direction of the center point passing through the inner region, it is 14 parts of -147mm, -145mm, -140mm, -135mm, -130mm, -125mm, -120mm, +120mm, +125mm, +130mm, +135mm, +140mm, +145mm and +147mm from the center point. The average value of the polishing speed at these measuring points is shown in Table 1.

[0165] [Table 1]

[0166]

Claims

1. A polishing liquid comprising abrasive particles, an additive and water, The additive contains (A1) polyglycerol having a weight average molecular weight of 350 to 2800, and (B) a compound having two or more nitrogen atoms to which a hydroxyalkyl group is bonded.

2. A polishing liquid comprising abrasive particles, an additive and water, The additive contains (A2) polyglycerol having a hydroxyl value of 800 to 1000 mgKOH / g, and (B) a compound having two or more nitrogen atoms to which a hydroxyalkyl group is bonded.

3. The polishing liquid according to claim 1 or 2, in, The abrasive grains contain a cerium-based compound.

4. The polishing liquid according to claim 1 or 2, in, The content of the polyglycerol is 0.001 to 10% by mass.

5. The polishing liquid according to claim 1 or 2, in, The component (B) contains ethylenediaminetetraethanol.

6. The polishing liquid according to claim 1 or 2, in, The component (B) contains ethylenediaminetetrapropanol.

7. The polishing liquid according to claim 1 or 2, in, The content of the component (B) is 0.001 to 5% by mass.

8. The polishing liquid according to claim 1 or 2, in, The additive further contains a 4-pyrone compound represented by the following general formula (1): Where, X 11 , X 12 and X 13 Each independently represents a hydrogen atom or a monovalent substituent.

9. The polishing liquid according to claim 8, in, The 4-pyrone compound contains at least one selected from the group consisting of 3-hydroxy-2-methyl-4-pyrone, 5-hydroxy-2-(hydroxymethyl)-4-pyrone and 2-ethyl-3-hydroxy-4-pyrone.

10. The polishing liquid according to claim 8, in, The content of the 4-pyrone compound is 0.001 to 5% by mass.

11. The polishing liquid according to claim 1 or 2, in, The additive further contains a saturated monocarboxylic acid.

12. The polishing liquid according to claim 1 or 2, which has a pH of 8.00 or less.

13. A grinding fluid set ， in, The polishing liquid according to claim 1 or 2 is stored by being divided into a first liquid and a second liquid, wherein the first liquid contains the abrasive and water, and the second liquid contains at least one of the additives and water. 14 . A polishing method comprising the step of polishing a polishing surface of a polished member using the polishing liquid according to claim 1 or 2. 15 . A method for manufacturing a part, comprising obtaining the part by using a member to be ground by the grinding method according to claim 14 . 16 . A method for producing a semiconductor component, comprising obtaining a semiconductor component by using a member to be ground by the grinding method according to claim 14 .

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