Array substrate and microfluidic device

Abstract

The embodiment of the present application provides an array substrate and a microfluidic device, wherein the array substrate includes a heating circuit and a heating electrode, and the heating circuit includes a first transistor. The first transistor includes a first electrode, a second electrode and a semiconductor portion, the semiconductor portion includes a P-type semiconductor layer and an N-type semiconductor layer, the P-type semiconductor layer includes a first part and a second part, the first part is in contact with the first electrode and the second part is not in contact with the first electrode, and the second electrode is in contact with the N-type semiconductor layer; the heating electrode is electrically connected to the first electrode or the second electrode. The first transistor also includes a control electrode, the control electrode overlaps with the second part and an insulating layer is included between the control electrode and the second part. The first transistor provided in the present application can output an electrical signal with low voltage and high current characteristics to the heating electrode. This characteristic helps to reduce the interference of the heating electrode on the array substrate in controlling the droplet movement process under the premise that the heating electrode can generate a large amount of heat.

Description

Technical Field

[0001] The present application relates to the field of microfluidics, and in particular to an array substrate and a microfluidic device. Background Art

[0002] Microfluidics is a technology that manipulates fluids at micrometer scales or smaller. It has intersected with disciplines such as chemistry, biology, engineering, and physics, demonstrating broad application prospects. Droplet microfluidics, due to its advantages such as ease of fluid manipulation, high monodispersity, miniaturization, low cost, high sensitivity, and high throughput, has been widely used in fields such as biomedical testing.

[0003] Typically, microfluidic devices used in biomedical testing often require high temperatures to manipulate droplets. Therefore, these devices often incorporate a heating function. However, this often negatively impacts the ability of the microfluidic device to manipulate droplet movement. Summary of the Invention

[0004] In view of this, the present application provides an array substrate and a microfluidic device to help solve the problem that the heating process affects the process of controlling the movement of droplets in the microfluidic device.

[0005] In a first aspect, embodiments of the present application provide an array substrate comprising a heating circuit and a heating electrode, the heating circuit comprising a first transistor. The first transistor comprises a first electrode, a second electrode, and a semiconductor portion, the semiconductor portion comprising a P-type semiconductor layer and an N-type semiconductor layer, the P-type semiconductor layer comprising a first portion and a second portion, the first portion contacting the first electrode and the second portion not contacting the first electrode, the second electrode contacting the N-type semiconductor layer, and the heating electrode electrically connected to the first electrode or the second electrode.

[0006] The first transistor further includes a control electrode, the control electrode overlaps with the second portion, and an insulating layer is included between the control electrode and the second portion.

[0007] The provision of a control electrode can increase the concentration of second carriers in the first portion, thereby increasing the number of first carriers transferred to the first portion per unit time. This helps increase the number of first carriers leaving the first transistor via the first electrode, thereby increasing the current intensity passing through the first transistor. This characteristic of the first transistor helps reduce interference of the heater electrode with the array substrate's control of droplet movement, while maintaining the ability to generate significant heat.

[0008] In a second aspect, an embodiment of the present application provides a microfluidic device, comprising the array substrate provided in the first aspect.

[0009] In this application, the provision of a control electrode can increase the concentration of the second carriers in the first portion, helping to increase the number of first carriers leaving the first transistor through the first electrode, thereby increasing the current intensity passing through the first transistor. In this case, the first transistor can output an electrical signal with low voltage and high current characteristics to the heating electrode. This characteristic helps to reduce the interference of the heating electrode with the array substrate's control of droplet movement, while still allowing the heating electrode to generate significant heat. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0011] Figure 1 is a schematic cross-sectional view of a partial structure of a microfluidic device related to the present application;

[0012] Figure 2 A schematic cross-sectional view of a partial structure of an array substrate provided in this application;

[0013] Figure 3 A schematic cross-sectional view of a partial structure of an array substrate provided in this application;

[0014] Figure 4 A schematic diagram of the working principle of a partial structure of the first transistor provided in this application;

[0015] Figure 5 A schematic diagram showing the relationship between the current and voltage output by the first transistor provided in this application;

[0016] Figure 6 for Figure 2 A schematic projection diagram of a portion of the structure shown;

[0017] Figure 7 An equivalent circuit diagram of a portion of the structure of the array substrate provided in this application;

[0018] Figure 8 A schematic cross-sectional view of a partial structure of an array substrate provided in this application;

[0019] Figure 9 A schematic cross-sectional view of a partial structure of an array substrate provided in this application;

[0020] Figure 10 for Figure 9 A flow chart showing the preparation of a partial structure of an array substrate;

[0021] Figure 11 A schematic cross-sectional view of a partial structure of an array substrate provided in this application;

[0022] Figure 12 for Figure 11 A flow chart showing the preparation of a partial structure of an array substrate;

[0023] Figure 13 for Figure 11 Equivalent circuit diagram of the partial structure shown;

[0024] Figure 14 A schematic cross-sectional view of a partial structure of an array substrate provided in this application;

[0025] Figure 15 This is a schematic top view of a partial structure of an array substrate provided in this application. DETAILED DESCRIPTION

[0026] In order to better understand the technical solution of the present application, the embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0027] It should be clear that the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0028] The terms used in the embodiments of the present application are for the purpose of describing specific embodiments only and are not intended to limit the present application. The singular forms "a", "an", "the" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms unless the context clearly indicates otherwise.

[0029] It should be understood that the term "and / or" as used herein simply describes a relationship between associated objects, indicating that three possible relationships exist. For example, "A and / or B" can represent: A alone, A and B together, or B alone. Furthermore, the character " / " in this document generally indicates an "or" relationship between the associated objects.

[0030] Figure 1 Schematic cross-sectional view of a partial structure of a microfluidic device related to the present application.

[0031] like Figure 1As shown, the existing microfluidic device 10' may include a driving electrode 01, a common electrode 02, a first hydrophobic layer 03 and a second hydrophobic layer 04 arranged opposite to each other. A control electric field for driving the movement of a droplet 05 can be generated between the driving electrode 01 and the common electrode 02. The relative area between the first hydrophobic layer 03 and the second hydrophobic layer 04 can be used for the droplet 05 to move therein, and the droplet 05 can contact both the first hydrophobic layer 03 and the second hydrophobic layer 04.

[0032] Controlling the electric field can achieve the effect of controlling the movement of the droplet 05 by changing the surface tension between the droplet 05 and the first hydrophobic layer 03, and the surface tension between the droplet 05 and the second hydrophobic layer 04, thereby changing the contact angles between the droplet 05 and the first hydrophobic layer 03 and the second hydrophobic layer 04 respectively.

[0033] The ability to control droplet movement through electric fields has attracted significant attention in fields such as biomedical testing and drug synthesis screening. In particular, when microfluidic device 10' is used in medical testing, chemical experiments, and other applications (e.g., drug synthesis experiments), it is often necessary for the device 10' to have a heating function to achieve the required high temperatures.

[0034] Existing microfluidic devices 10' may include a resistive wire structure 06. Resistive wire structure 06 generates heat when receiving current, a property used to achieve a heating function. However, during the heating process, the resistive wire structure 06 itself generates an electric field. To prevent the electric field generated by the resistive wire structure 06 from interfering with the operating state of the drive electrode 01, the voltage transmitted to the resistive wire structure 06 is typically reduced. This results in a smaller current being received by the resistive wire structure 06. The heat generated by the resistive wire structure 06 makes it difficult for the microfluidic device 10' to reach a higher temperature, thus affecting the performance of the microfluidic device 10'.

[0035] Figure 2 This is a schematic cross-sectional view of a partial structure of an array substrate provided in this application.

[0036] In order to solve the above problems, the present application provides an array substrate 10, such as Figure 2 As shown, the array substrate 10 includes a heating circuit 11 and a heating electrode 12 . The heating circuit 11 can be used to transmit an electrical signal required for heating to the heating electrode 12 . The heating circuit 11 includes a first transistor 111 .

[0037] The first transistor 111 includes a first electrode 111a, a second electrode 111b, and a semiconductor portion 111c. The semiconductor portion 111c includes a P-type semiconductor layer C1 and an N-type semiconductor layer C2. The first transistor 111 may be a diode.

[0038] The P-type semiconductor layer C1 includes a first portion C11 and a second portion C12 . The first portion C11 contacts the first electrode 111 a and the second portion C12 does not contact the first electrode 111 a . The second electrode 111 b contacts the N-type semiconductor layer C2 .

[0039] When the first transistor 111 is operating, the second electrode 111b can transfer first carriers (e.g., electrons) to the N-type semiconductor layer C2. At least a portion of the first carriers transferred from the second electrode 111b to the N-type semiconductor layer C2 can move to the P-type semiconductor layer C1 and can exit the first transistor 111 through the first electrode 111a. The greater the number of first carriers transferred from the N-type semiconductor layer C2 to the P-type semiconductor layer C1 within a given period of time, the greater the current passing through the first transistor 111. In addition to the difference between the voltages applied to the first and second electrodes 111a, 111b, the concentration of second carriers (e.g., holes) in the P-type semiconductor layer C1 can also affect the number of first carriers transferred from the N-type semiconductor layer C2 to the P-type semiconductor layer C1. This is because first carriers in the semiconductor portion 111c tend to migrate toward regions with a higher concentration of second carriers. For example, electrons tend to migrate toward regions with a higher concentration of holes.

[0040] Figure 3 This is a schematic cross-sectional view of a partial structure of an array substrate provided in this application.

[0041] Combine Figure 2 and Figure 3 The heating electrode 12 is electrically connected to the first electrode 111 a or the second electrode 111 b . At this time, the first transistor 111 can be used to transmit the electrical signal required for heating to the heating electrode 12 .

[0042] Among them, combined Figure 2 and Figure 3 The first transistor 111 further includes a control electrode 111d, the control electrode 111d overlaps with the second portion C12, and an insulating layer 07 is included between the control electrode 111d and the second portion C12.

[0043] Figure 4 This is a schematic diagram of the working principle of a partial structure of the first transistor provided in this application.

[0044] The control electrode 111d can generate a control electric field, and the control electric field can act on the second portion C12. Figure 4As shown, when the control electrode 111d is working, under the action of the control electric field generated by it, new first carriers a and second carriers b (generated by the separation of originally combined electrons and holes) can be generated in the P-type semiconductor layer C1, and the first carrier a can move toward the second part C12 under the action of the electric field force generated by the control electric field. At this time, the concentration of the second carrier b in the first part C11 increases.

[0045] In the embodiment of the present application, the provision of the control electrode 111d can increase the concentration of the second carriers b in the first portion C11, thereby increasing the number of first carriers a transferred to the first portion C11 per unit time. This helps increase the number of first carriers a leaving the first transistor 111 through the first electrode 111a, thereby increasing the current intensity passing through the first transistor 111. Under the action of the control electrode 111d, the current intensity output by the first transistor 111 to the heating electrode 12 can be increased without increasing the voltage difference across the first transistor 111. That is, the first transistor 111 can output an electrical signal with low voltage and high current characteristics to the heating electrode 12. This characteristic of the first transistor 111 helps reduce interference of the heating electrode 12 with the array substrate 10's control of droplet movement, while still allowing the heating electrode 12 to generate significant heat. In addition, since there is an insulating layer 07 between the control electrode 111d and the second part C12, it is difficult for carriers to leave the P-type semiconductor layer C1 through the control electrode 111d. Therefore, when the first transistor 111 is turned on, the current output by the first transistor 111 will not decrease due to the control electrode 111d extracting carriers in the semiconductor part 111c.

[0046] Figure 5 This is a schematic diagram of the relationship between the current and voltage output by the first transistor provided in this application. For ease of understanding, Figure 5 Detailed description of the statistical data changes of the voltage and current of the electrical signal output by the first transistor in multiple experiments is given in FIG.

[0047] like Figure 5 As shown, when the source voltage SV of the first transistor 111 satisfies 0V<SV<5V, at the same source voltage SV, the current CR output by the first transistor 111 can be greater than 10 -6 A, that is, the first transistor 111 can output an electrical signal with low voltage and high current characteristics.

[0048] The first transistor 111 provided in this application can also be used to drive a light-emitting device. Since the first transistor 111 can output an electrical signal with low voltage and high current characteristics, the light-emitting device can emit light with higher brightness when driven by the first transistor 111, which helps to improve the problem of low luminous intensity caused by insufficient voltage supply. The light-emitting device can be one of an organic light-emitting diode (OLED), a micro light-emitting diode (Micro-LED), and a sub-millimeter light-emitting diode (mini-LED).

[0049] In one embodiment of the present application, Figure 2 and Figure 3 The semiconductor portion 111c further includes an intrinsic semiconductor layer C3, which is located between the P-type semiconductor layer and the N-type semiconductor layer. In this case, the first transistor 111 may be a PIN junction diode.

[0050] Figure 6 for Figure 2 The projection diagram of the partial structure shown is for easy understanding. Figure 7 Only the projections of the first part and the second part in the first plane are shown.

[0051] In one embodiment of the present application, Figure 6 As shown, the projection s1 of the first portion C11 on the first plane is larger than the projection s2 of the second portion C12 on the first plane. The first plane is perpendicular to the arrangement direction of the first electrodes 111a and the first portion C11, and may be perpendicular to the plane of the array substrate.

[0052] When the length of the P-type semiconductor layer C1 in a direction perpendicular to the first plane remains constant, a larger projected area of ​​the P-type semiconductor layer C1 within the first plane means a larger volume of the P-type semiconductor layer C1 can be, and thus a greater number of carriers that the P-type semiconductor layer C1 can accommodate. Therefore, a projected area of ​​the first portion C11 within the first plane is larger than a projected area of ​​the second portion C12 within the first plane, meaning that the number of carriers that the second portion C12 can accommodate can be smaller than the number of carriers that the first portion C11 can accommodate.

[0053] When the first transistor 111 is operating, some of the first carriers in the first portion C11 can leave the P-type semiconductor layer C1 through the first electrode 111a, and the number of the first carriers that leave can be proportional to the magnitude of the current output by the first transistor 111. The control electric field generated by the control electrode 111d can move some of the carriers in the P-type semiconductor layer C1 to the second portion C12. Under the action of the control electric field, some of the first carriers in the first portion C11 can also be attracted to the second portion C12. To avoid the current reduction caused by the control electric field excessively attracting the first carriers in the first portion C11, the projected area of ​​the first portion C11 can be set to be larger than the projected area of ​​the second portion C12, thereby limiting the number of first carriers that can be accommodated in the second portion C12 and reducing the impact of the control electric field on the magnitude of the current output by the first transistor 111.

[0054] Figure 7 This is an equivalent circuit diagram of a partial structure of the array substrate provided in this application.

[0055] In one embodiment of the present application, Figure 7 As shown, the control electrode 111d is electrically connected to the first signal line L1, and the first signal line L1 is used to transmit a constant voltage signal.

[0056] In the embodiment of the present application, the first signal line L1 can transmit a constant voltage signal to the control electrode 111d, and the control electrode 111d can generate a control electric field with a constant field strength, which helps to adjust the distribution of some carriers in the P-type semiconductor layer C1.

[0057] Figure 8 This is a schematic cross-sectional view of a partial structure of an array substrate provided in this application.

[0058] In one embodiment of the present application, Figure 8 As shown, the control electrode 111 d is electrically insulated from the first electrode 111 a and the signal lines to which they are electrically connected are different. Thus, the control electrode 111 d and the first electrode 111 a can receive different electrical signals respectively.

[0059] In the embodiment of the present application, the control electrode 111d and the first electrode 111a are electrically connected to different signal lines, respectively. This helps to achieve a suitable voltage difference between the voltage received by the control electrode 111d and the voltage received by the first electrode 111a, thereby enhancing the effect of the control electrode 111d in increasing the current output by the first transistor 111. For example, the control electrode 111d can be electrically connected to the first signal line L1, and the first electrode 111a can be electrically connected to the second signal line L2. The electrical signals transmitted by the first signal line L1 and the second signal line L2 can be different.

[0060] In one embodiment of the present application, the first electrode 111 a , the second electrode 111 b , and the control electrode 111 d all include light-shielding materials.

[0061] In the embodiments of this application, Figure 3 As shown, along the direction perpendicular to the plane where the array substrate 10 is located, the first electrode 111a, the second electrode 111b, and the control electrode 111d can respectively overlap with the semiconductor portion 111c. Then, when there is external light irradiated toward the semiconductor portion 111c along the direction perpendicular to the plane where the array substrate 10 is located, the first electrode 111a, the second electrode 111b, and the control electrode 111d can all play a light-shielding role, thereby reducing the influence of external light on the working state of the first transistor 111.

[0062] In one embodiment of the present application, Figure 2 and Figure 7 The heating circuit 11 also includes a second transistor 112, a first electrode 112a of the second transistor 112 is electrically connected to the first signal line L1, a second electrode 112b of the second transistor 112 is electrically connected to the control electrode 111d, and a gate 112c of the second transistor 112 is electrically connected to the second signal line L2. The first signal line L1 is used to transmit a constant voltage signal.

[0063] The second transistor 112 can be a triode, a field effect transistor, etc. The second transistor 112 can be used to control the working state of the control electrode 111d. When the second transistor 112 is turned on, the control electrode 111d can receive the electrical signal transmitted by the first signal line L1, and the control electrode 111d is in operation.

[0064] The second signal line L2 can transmit a control signal to the gate 112c of the second transistor 112 to control the on or off of the second transistor 112. For example, the second transistor 112 can be a P-channel transistor, and the control signal can be a low-level signal, so that the gate 112c of the second transistor 112 is turned on when receiving the control signal.

[0065] In one embodiment of the present application, Figure 2 As shown, the heating electrode 12 is provided in the same layer as the second electrode 112b of the second transistor 112. In a direction perpendicular to the plane of the array substrate 10, the channel 112d of the second transistor 112 overlaps the control electrode 111d, wherein the control electrode 111d comprises a light shielding material.

[0066] In the embodiment of the present application, the heating electrode 12 is disposed on the same layer as the second electrode 112b of the second transistor 112. Since the heating electrode 12 and the second electrode 112b of the second transistor 112 can be electrically connected, the heating electrode 12 and the second electrode 112b of the second transistor 112 can be integrally disposed. This configuration avoids the need for an additional film layer structure as the heating electrode 12, thereby reducing manufacturing costs. Furthermore, since the control electrode 111d and the channel 112d of the second transistor 112 can overlap, and the control electrode 111d can include a light-shielding material, the control electrode 111d can be used to shield the channel 112d of the second transistor 112, thereby maintaining the operational stability of the second transistor 112.

[0067] Figure 9 This is a schematic cross-sectional view of a partial structure of an array substrate provided in this application.

[0068] In one embodiment of the present application, Figure 9 As shown, the control electrode 111 d is provided in the same layer as the second electrode 112 b of the second transistor 112 . Along a direction perpendicular to the plane of the array substrate 10 , the channel 112 d of the second transistor 112 overlaps the heating electrode 12 .

[0069] In the embodiment of the present application, the control electrode 111d is disposed in the same layer as the second electrode 112b of the second transistor 112. Since the control electrode 111d and the second electrode 112b of the second transistor 112 can be electrically connected, the control electrode 111d and the second electrode 112b of the second transistor 112 can be integrated. This configuration avoids the need for an additional film layer structure as the control electrode 111d, thereby reducing manufacturing costs. In addition, since the heating electrode 12 and the channel 112d of the second transistor 112 can overlap, and the heating electrode 12 can include a light-shielding material, the heating electrode 12 can be used to shield the channel 112d of the second transistor 112, thereby maintaining the operating stability of the second transistor 112.

[0070] Figure 10 for Figure 9 The preparation flow chart of the partial structure of the array substrate is shown.

[0071] Combine Figure 9 and Figure 10 When preparing the array substrate 10, the gate 112c of the second transistor 112, the first film layer 001, the channel 112d of the second transistor 112, the control electrode 111d, the second film layer 002, the P-type semiconductor layer C1, the intrinsic semiconductor layer C3, the N-type semiconductor layer C2, the third film layer 003, the heating electrode 12, the fourth film layer 004, the driving electrode 212 and the fifth film layer 005 can be prepared in sequence.

[0072] Figure 11This is a schematic cross-sectional view of a partial structure of an array substrate provided in this application.

[0073] In one embodiment of the present application, Figure 11 As shown, the array substrate 10 further includes a fluid layer 31 and a driving circuit 21. The driving circuit 21 is used to drive the movement of the fluid in the fluid layer 31. The driving circuit 21 includes a third transistor 211 and a driving device 212. The third transistor 211 is used to transmit the electrical signal required to drive the movement of the fluid to the driving device 212. The third transistor 211 can control the working state of the driving device 212. The third transistor 211 can be a triode, a field effect transistor, etc.

[0074] The second transistor 112 and the third transistor 211 are transistors of the same type, and this configuration helps to reduce the difficulty of manufacturing.

[0075] Figure 12 for Figure 11 The preparation flow chart of the partial structure of the array substrate is shown.

[0076] Combine Figure 11 and Figure 12 When fabricating the array substrate 10, the gate electrode 112c of the second transistor 112, the first film layer 001, the channel 112d of the second transistor 112, the second electrode 112b of the second transistor 112, the second film layer 002, the third film layer 003, the N-type semiconductor layer C2, the intrinsic semiconductor layer C3, the P-type semiconductor layer C1, the fourth film layer 004, the control electrode 111d, the fifth film layer 005, the drive electrode 212, and the sixth film layer 006 can be fabricated in sequence. The second film layer 002 and the third film layer 003 can be fabricated using the same mask.

[0077] Figure 13 for Figure 11 The equivalent circuit diagram of the partial structure is shown.

[0078] In one embodiment of the present application, Figure 11 and Figure 13 , the gate 211c of the third transistor 211 is electrically connected to the second signal line L2.

[0079] In the embodiment of the present application, the gate 112c of the second transistor 112 and the gate 211c of the third transistor 211 can both be electrically connected to the second signal line L2, so that the gate 112c of the second transistor 112 and the gate 211c of the third transistor 211 can both receive the same control signal. Since the second transistor 112 and the third transistor 211 can be transistors of the same type, the second transistor 112 and the third transistor 211 can be turned on simultaneously, and the driving device 212 and the heating electrode 12 can operate simultaneously, which helps to achieve the array substrate 10 to activate the heating function while controlling the movement of the droplet.

[0080] In one embodiment of the present application, Figure 11 and Figure 13 The first electrode 211a of the third transistor 211 and the control electrode 111d are electrically connected to the same signal line.

[0081] In an embodiment of the present application, the same signal line can be used to transmit electrical signals to the driving device 212 and the control electrode 111d respectively. This setting method helps to simplify the wiring arrangement; for example, the first electrode 211a and the control electrode 111d of the third transistor 211 can be set to be electrically connected to the first signal line L1.

[0082] In one embodiment of the present application, Figure 2 and Figure 7 The heating circuit 11 further includes a first capacitor 113, which includes a first plate 113a and a second plate 113b. The first plate 113a can be electrically connected to the control electrode 111d, and the second plate 113b can be located on a side of the film layer where the second electrode 112b of the second transistor 112 is located, away from the semiconductor portion 111c. In this case, the first capacitor 113 can be used to maintain the potential of the control electrode 111d.

[0083] The second electrode 112 b of the second transistor 112 is provided in the same layer as the first electrode plate 113 a , that is, the second electrode 112 b of the second transistor 112 can be provided integrally with the first electrode plate 113 a .

[0084] In the embodiment of the present application, the provision of the first capacitor 113 can maintain the potential of the control electrode 111d for a certain period of time, thereby improving the operating stability of the control electrode 111d. Furthermore, the provision of the second electrode 112b of the second transistor 112 and the first electrode plate 113a in the same layer avoids the need for an additional film layer for the capacitor plate, thereby reducing manufacturing costs.

[0085] Figure 14 This is a schematic cross-sectional view of a partial structure of an array substrate provided in this application.

[0086] In one embodiment of the present application, Figure 14 As shown, the array substrate 10 further includes a light-blocking structure 41, which may include a light-absorbing material. Along a direction perpendicular to the plane of the array substrate 10, the channel 112d of the second transistor 112 overlaps with the light-blocking structure 41. The light-blocking structure 41 can be used to block the channel 112d of the second transistor 112, thereby enhancing the operating stability of the second transistor 112.

[0087] The second electrode 113b is provided on the same layer as the light shielding structure 41. This arrangement eliminates the need for a separate film layer for the light shielding structure 41, thereby reducing manufacturing costs.

[0088] Figure 15 This is a schematic top view of a partial structure of an array substrate provided in this application.

[0089] In one embodiment of the present application, Figure 13 and Figure 15 The array substrate 10 may further include a plurality of functional units 51 arranged in an array, and the functional unit 51 includes a heating circuit 11 and a driving circuit 21 .

[0090] In an embodiment of the present application, by integrating the heating circuit 11 and the driving circuit 21 in the array substrate 10 into an array-arranged functional unit 51, an array arrangement of the heating circuit 11 can be achieved. When the heating function of the array substrate 10 is turned on, the heating electrode 12 can achieve the effect of uniformly heating the array substrate 10.

[0091] The present application provides a microfluidic device, including the array substrate as described in the above embodiment. The microfluidic device can be applied to biomedical research, drug synthesis screening, environmental monitoring and protection, health quarantine, forensic identification, biological reagent detection and other fields.

[0092] The microfluidic device provided in the present application can have a good heating function, which can reduce the interference with the process of controlling the movement of droplets while meeting the higher temperature required for controlling the movement of droplets.

[0093] In this specification, reference can be made to the same or similar parts between the various embodiments. In particular, for the device embodiment and the terminal embodiment, since they are basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the description in the method embodiment.

Claims

1. An array substrate, characterized in that: It includes a heating circuit and a heating electrode, wherein the heating circuit includes a first transistor; The first transistor includes a first electrode, a second electrode, and a semiconductor portion, the semiconductor portion includes a P-type semiconductor layer and an N-type semiconductor layer; the P-type semiconductor layer includes a first portion and a second portion, the first portion contacts the first electrode and the second portion does not contact the first electrode, and the second electrode contacts the N-type semiconductor layer; the heating electrode is electrically connected to the first electrode or the second electrode; The first transistor further includes a control electrode, the control electrode overlaps with the second portion, and an insulating layer is included between the control electrode and the second portion.

2. The array substrate according to claim 1, wherein: The semiconductor portion further includes an intrinsic semiconductor layer located between the P-type semiconductor layer and the N-type semiconductor layer.

3. The array substrate according to claim 1, wherein: The projected area of ​​the first portion on the first plane is larger than the projected area of ​​the second portion on the first plane; The first plane is perpendicular to an arrangement direction of the first electrodes and the first portion.

4. The array substrate according to claim 1, wherein: The control electrode is electrically connected to a first signal line, and the first signal line is used to transmit a constant voltage signal.

5. The array substrate according to claim 1 or 4, characterized in that: The control electrode is electrically insulated from the first electrode and is electrically connected to different signal lines.

6. The array substrate according to claim 1, wherein: The first electrode, the second electrode, and the control electrode all include light-shielding materials.

7. The array substrate according to claim 1, wherein: The heating circuit also includes a second transistor, a first electrode of the second transistor is electrically connected to the first signal line, a second electrode of the second transistor is electrically connected to the control electrode, a gate of the second transistor is electrically connected to the second signal line, and the first signal line is used to transmit a constant voltage signal.

8. The array substrate according to claim 7, wherein: The control electrode is arranged in the same layer as the second electrode of the second transistor; Along a direction perpendicular to the plane where the array substrate is located, the channel of the second transistor overlaps with the heating electrode.

9. The array substrate according to claim 7, wherein: The heating electrode is arranged on the same layer as the second electrode of the second transistor; Along a direction perpendicular to the plane of the array substrate, the channel of the second transistor overlaps with the control electrode; Wherein, the control electrode comprises a light-shielding material.

10. The array substrate according to claim 7, wherein: The array substrate further includes a fluid layer and a driving circuit, wherein the driving circuit is used to drive the fluid in the fluid layer to move, and the driving circuit includes a third transistor and a driving device, wherein the third transistor is used to transmit an electrical signal required to drive the fluid to move to the driving device; The second transistor and the third transistor are transistors of the same type.

11. The array substrate according to claim 10, wherein: A gate of the third transistor is electrically connected to the second signal line.

12. The array substrate according to claim 10, wherein: The first electrode of the third transistor and the control electrode are electrically connected to the same signal line.

13. The array substrate according to claim 7, wherein: The heating circuit further includes a first capacitor, the first capacitor includes a first electrode plate and a second electrode plate, and the second electrode of the second transistor is arranged on the same layer as the first electrode plate.

14. The array substrate according to claim 13, wherein: The array substrate further includes a light shielding structure; along a direction perpendicular to the plane of the array substrate, the channel of the second transistor overlaps with the light shielding structure; The second electrode plate is arranged on the same layer as the light shielding structure.

15. A microfluidic device, characterized in that: Comprising the array substrate according to any one of claims 1 to 14.

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