Electron beam drawing method, electron beam drawing apparatus, and non-transitory tangible readable recording medium on which program is recorded

Abstract

One embodiment of the present invention provides an electron beam drawing method, an electron beam drawing device, and a non-transitory tangible readable recording medium on which a program is recorded, whereby it is possible to correct positional shifts in a beam irradiation position and a pattern formation position caused by irreversible deformation of a sample due to irradiation by an electron beam. An electron beam drawing method according to one embodiment of the present invention calculates a first positional shift amount from a position on a design in a case where a pattern is drawn by irradiating a sample irreversibly deformed depending on an irradiation amount distribution of an electron beam with an electron beam, the pattern being generated by irreversible deformation of the sample after completion of a drawing process. On the basis of the first positional shift amount, a correction amount for correcting the position of the pattern or the irradiation position of the electron beam when the sample is irradiated with the electron beam to form the pattern is calculated, and a drawing process for drawing the pattern on the sample is performed on the basis of the correction amount.

Description

[0001] The present application is based on Japanese Patent Application No. 2023-096551 (filing date: June 12, 2023) and claims the priority of the basic application. The present application incorporates the entire contents of the basic application by reference. Technical Field

[0002] One embodiment of the present invention relates to an electron beam drawing method, an electron beam drawing apparatus, and a non-temporary tangible readable recording medium having a program recorded thereon, for example, a method of drawing while correcting positional displacement on a substrate that has been irreversibly deformed by electron beam irradiation. Background Art

[0003] Photolithography, which is responsible for the progress of miniaturization of semiconductor devices, is an extremely important process for generating patterns in the semiconductor manufacturing process. In recent years, with the high integration of LSI, the circuit line width required by semiconductor devices has been miniaturized year by year. Here, electron beam (electron beam) drawing technology has excellent resolution in nature and uses electron beams to draw on wafers, etc.

[0004] For example, there is a drawing device using multiple beams. Compared with the case of drawing with a single electron beam, by using multiple beams, more beams can be irradiated at a time, so the processing volume can be greatly increased. In such a drawing device using a multiple beam method, for example, the electron beam emitted from the electron gun is passed through a mask having multiple holes to form multiple beams, and blanking control is performed on each of them. The unshielded beams are reduced by the optical system, deflected by the deflector, and irradiated to the desired position on the sample.

[0005] Here, with the popularization of multi-patterning, PSM masks, EUV masks, and the like, the requirements for global pattern position accuracy within the mask are becoming stricter year by year.

[0006] As one of the reasons for deteriorating the global pattern position accuracy, the glass substrate used in the sample undergoes reversible deformation due to thermal expansion caused by heating of the glass substrate accompanying the irradiation of the electron beam and the subsequent contraction. Due to the deformation of the glass substrate, there is a problem of positional displacement of the beam irradiation position or the pattern formation position. In response to this problem, a technique for shifting the pattern position by calculating the strain generated by the deformation of the substrate caused by thermal expansion accompanying the heating of the body is disclosed (see Japanese Patent Publication No. 2004-312030).

[0007] On the other hand, in response to this problem, a low-thermal expansion substrate (LTEM: low-thermal expansion material substrate) that suppresses the thermal expansion of the substrate itself has been developed by a blank manufacturer that manufactures a glass substrate. In this LTEM substrate, the thermal expansion caused by the temperature rise accompanying the irradiation of the electron beam is small, and the deformation of the substrate caused by this can be suppressed. As a result, problems such as positional displacement caused by reversible deformation accompanying thermal expansion are solved. However, it is known that the irradiation of the electron beam causes an irreversible shrinkage phenomenon of the glass substrate. The background is that in order to improve the local dimensional accuracy, the sensitivity of the resist is reduced to increase the beam irradiation amount; due to the popularity of the LTEM substrate, the thermal expansion becomes negligible, and the shrinkage phenomenon of the glass substrate becomes relatively obvious. The problem arises that the deformation caused by the irreversible shrinkage phenomenon of the glass substrate deteriorates the global position accuracy of the beam irradiation position and the pattern forming position. This problem becomes a problem in both multi-beam drawing and single-beam drawing. Summary of the invention

[0008] One embodiment of the present invention provides an electron beam drawing method, an electron beam drawing device, and a non-temporary tangible readable recording medium having a program recorded thereon, which are capable of correcting positional deviations of a beam irradiation position and a pattern formation position caused by irreversible sample deformation due to electron beam irradiation.

[0009] An electron beam lithography method according to one embodiment of the present invention,

[0010] When a sample that is irreversibly deformed depending on the irradiation amount distribution of the electron beam is irradiated with an electron beam to draw a pattern, a first position shift amount from a designed position of the pattern caused by the irreversible deformation of the sample after the drawing process is completed is calculated;

[0011] Based on the first position shift amount, a correction amount for correcting the position of a pattern when the sample is irradiated with an electron beam to form a pattern or an irradiation position of the electron beam is calculated;

[0012] Based on the correction amount, a drawing process is performed to draw the above-mentioned pattern on the sample.

[0013] An electron beam lithography device according to one embodiment of the present invention includes:

[0014] A worktable on which a sample that is irreversibly deformed depending on the irradiation dose distribution of the electron beam is placed;

[0015] a first position shift amount calculation circuit for calculating a first position shift amount of the pattern from a designed position caused by irreversible deformation of the sample after the pattern is drawn using an electron beam;

[0016] a correction amount calculation circuit that calculates a correction amount for correcting the position of the pattern or the irradiation position of the electron beam when the sample is irradiated with the electron beam based on the first position shift amount; and

[0017] The drawing mechanism draws the above-mentioned pattern on the sample based on the correction amount.

[0018] A non-transitory tangible readable recording medium having a program recorded thereon according to one embodiment of the present invention,

[0019] The program enables the computer to perform the following functions:

[0020] A function for calculating a first positional deviation of a pattern from a designed position caused by irreversible deformation of the sample after completion of a drawing process when a pattern is drawn by irradiating the sample with the electron beam, which irreversibly deforms depending on the irradiation dose distribution of the electron beam;

[0021] A function of storing the first position offset in a storage device; and

[0022] A function of reading a first positional deviation amount from a storage device and calculating a correction amount for correcting the position of the pattern or the irradiation position of the electron beam when the sample is irradiated with the electron beam to form the pattern based on the first positional deviation amount.

[0023] Another aspect of the electron beam drawing method of the present invention is

[0024] In a first drawing process of drawing a first chip pattern when drawing a pattern by irradiating the electron beam onto a sample that is irreversibly deformed depending on the irradiation amount distribution of the electron beam, a first positional offset of the first chip pattern from a designed position caused by irreversible deformation of the sample caused by irradiating the sample with the electron beam before the irradiation time of the electron beam is calculated,

[0025] In a second drawing process of drawing a second chip pattern in a manner overlapping with the first chip pattern, a second positional offset of the second chip pattern from a designed position caused by irreversible deformation of the sample due to the electron beam irradiating the sample before the irradiation time is calculated.

[0026] Based on the difference between the second position shift amount and the first position shift amount, in the second drawing process, a correction amount for correcting the position of the pattern when the sample is irradiated with the electron beam to form the pattern or the irradiation position of the electron beam is calculated;

[0027] The first drawing process of drawing the first chip pattern on the sample and the second drawing process of drawing the second chip pattern on the sample based on the correction amount are performed.

[0028] An electron beam drawing device according to another aspect of the present invention comprises:

[0029] A worktable on which a sample that is irreversibly deformed depending on the irradiation dose distribution of the electron beam is placed;

[0030] a position shift amount calculation circuit for calculating, in a first drawing process of drawing a first chip pattern when drawing a pattern by irradiating the sample with the electron beam, a first position shift amount of the first chip pattern from a designed position caused by irreversible deformation of the sample caused by the electron beam irradiating the sample before the irradiation time at the irradiation time of the electron beam, and for calculating, in a second drawing process of drawing a second chip pattern in a manner overlapping with the first chip pattern, a second position shift amount of the second chip pattern from a designed position caused by irreversible deformation of the sample caused by the electron beam irradiating the sample before the irradiation time at the irradiation time of the electron beam;

[0031] a correction amount calculation circuit that calculates a correction amount for correcting a position of a pattern or an irradiation position of an electron beam when the sample is irradiated with the electron beam to form the pattern in a second drawing process, based on a difference between the second position shift amount and the first position shift amount; and

[0032] The drawing mechanism performs a first drawing process of drawing a first chip pattern on the sample and the above-mentioned second drawing process of drawing a second chip pattern on the sample based on the correction amount.

[0033] Another aspect of the present invention is a non-transitory tangible readable recording medium having a program recorded thereon.

[0034] The program enables the computer to perform the following functions:

[0035] In a first drawing process of drawing a first chip pattern when drawing a pattern by irradiating the electron beam onto a sample that is irreversibly deformed depending on the irradiation amount distribution of the electron beam, a function of calculating a first positional offset of the first chip pattern from a designed position caused by irreversible deformation of the sample caused by the electron beam irradiating the sample before the irradiation time at the irradiation time of the electron beam;

[0036] In a second drawing process of drawing a second chip pattern so as to overlap with the first chip pattern, a function of calculating a second positional offset of the second chip pattern from a designed position caused by irreversible deformation of the sample due to the electron beam irradiating the sample before the irradiation time at the irradiation time of the electron beam;

[0037] A function of storing the first position offset and the second position offset in a storage device; and

[0038] The first position offset and the second position offset are read out from a storage device, and based on the difference between the second position offset and the first position offset, a function is calculated in the second drawing process to correct the position of the pattern when the sample is irradiated with the electron beam to form the above-mentioned pattern or the irradiation position of the electron beam. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 This is a conceptual diagram showing the structure of the rendering device according to the first embodiment.

[0040] Figure 2 This is a conceptual diagram showing the structure of the formed aperture array substrate of embodiment 1.

[0041] Figure 3 This is a cross-sectional view showing the structure of the blanking aperture array mechanism according to the first embodiment.

[0042] Figure 4 This is a diagram showing an example of an evaluation substrate according to Embodiment 1.

[0043] Figure 5 It is a diagram showing an example of the relationship between the positional deviation amounts of evaluation substrates and an example of deformation of the substrates according to the first embodiment.

[0044] Figure 6 This is a diagram showing an example of a state when the evaluation substrate is irradiated with a beam according to the first embodiment.

[0045] Figure 7 This is a diagram showing an example of a stress state caused by beam irradiation on an evaluation substrate according to the first embodiment.

[0046] Figure 8 This is a diagram showing an example of a state of positional deviation of the substrate surface in Comparative Example 1 of Embodiment 1.

[0047] Fig. 9 This is a diagram showing an example of deformation of the substrate surface in Comparative Example 1 of Embodiment 1.

[0048] Fig.10 This is a diagram showing an example of a state of positional deviation of the substrate surface in the first embodiment.

[0049] Fig.11 This is a flowchart showing an example of the main process of the drawing method according to the first embodiment.

[0050] Fig.12 This is a flowchart showing another example of the main process of the drawing method according to the first embodiment.

[0051] Fig.13 This is a diagram showing an example of the relationship between the reduction ratio of the substrate and the dose in the first embodiment.

[0052] Fig.14 This is a diagram showing an example of a model based on the finite element method in the first embodiment.

[0053] Fig.15 This is a conceptual diagram for explaining an example of the drawing operation in the first embodiment.

[0054] Fig.16 This is a diagram showing an example of a multi-beam irradiation area and rendering target pixels according to the first embodiment.

[0055] Fig.17 This is a diagram for explaining an example of the multi-beam imaging operation according to the first embodiment.

[0056] Fig.18 This is a conceptual diagram showing the structure of a drawing device according to the second embodiment.

[0057] Fig.19 This is a diagram for explaining the two-pass drawing method of the second embodiment.

[0058] Fig. 20 This is a diagram showing an example of a state of positional deviation of the substrate surface in a comparative example of the second embodiment.

[0059] Fig.21 This is a diagram showing an example of a state of positional displacement of the substrate surface in the second embodiment.

[0060] Fig. 22 This is a flowchart showing an example of the main process of the drawing method of embodiment 2.

[0061] Fig.23 This is a diagram showing an example of a state of positional displacement of the substrate surface in the third embodiment.

[0062] Fig.24 This is a conceptual diagram showing the structure of a drawing device according to a fourth embodiment.

[0063] Fig.25 This is a diagram showing an example of a state of positional deviation of the substrate surface in a comparative example of the fourth embodiment.

[0064] Fig.26 This is a diagram showing an example of a positional deviation state of the substrate surface in the fourth embodiment.

[0065] Fig. 27 This is a flowchart showing a part of an example of the main process of the drawing method of embodiment 4.

[0066] Fig.28 This is a flowchart showing the remaining part of an example of the main process steps of the drawing method of embodiment 4.

[0067] Fig.29 This is a diagram showing an example of a sample surface on which an alignment mark is formed according to the fourth embodiment.

[0068] Fig.30 This is a diagram showing an example of a mark position after the first drawing process in the fourth embodiment.

[0069] Fig.31 This is a diagram showing an example of a mark position after the second drawing process in Implementation Example 4.

[0070] Fig.32 This is a diagram showing an example of a state of positional displacement of the substrate surface in the fifth embodiment.

[0071] Explanation of symbols

[0072] 12: LTEM substrate; 13: Cr film; 14: alignment mark; 16: resist film; 20: multi-beam; 22: hole; 24: control electrode; 25: through hole; 26: counter electrode; 29: secondary irradiation area; 30: drawing area; 31: blanking aperture array substrate; 32: strip area; 33: support substrate; 34: irradiation area; 36: pixel; 41: control circuit; 50: dose mapping production unit; 52: final position offset calculation unit; 54: position offset calculation unit during drawing; 56: correction calculation unit; 58: correction mapping production unit; 62: position offset calculation unit during drawing; 64: correction calculation unit; 66: correction mapping production unit; 67: mark offset calculation unit; 68: GMC correction unit; 69: mark position correction unit; 70: emission data generation unit; 72: data processing unit; 74: transmission processing unit ;76: drawing control unit;100: drawing device;101: sample;102: electron lens tube;103: drawing chamber;105: XY worktable;110: control computer;112: memory;130: deflection control circuit;132,134: DAC amplifier unit;136: lens control circuit;137: detection circuit;138: worktable control mechanism;139: worktable position measuring device;140,142: storage device;150: drawing mechanism;160: control system circuit;200: electron beam;201: electron gun;202: illumination lens;203: forming aperture array substrate;204: blanking aperture array mechanism;205 reduction lens;206: limiting aperture substrate;207: objective lens;208: deflector;209: deflector;210: reflector;212: detector;330: diaphragm area. DETAILED DESCRIPTION

[0073] In the following, in the embodiments, as an example of a charged particle beam, a configuration using an electron beam is described. However, the charged particle beam is not limited to an electron beam, and may be a beam of charged particles using an ion beam or the like. In addition, in the embodiments, a case where a multi-beam composed of a plurality of electron beams is used is described. However, the correction method described below is not limited to a multi-beam, and may also be applied to a case where a single beam is used.

[0074] Implementation method 1.

[0075] Figure 1 1 is a conceptual diagram showing the structure of the drawing device of Embodiment 1. Figure 1 , the drawing device 100 includes a drawing mechanism 150 and a control system circuit 160. The drawing device 100 is an example of a multi-charged particle beam drawing device and an example of a multi-charged particle beam exposure device. The drawing mechanism 150 includes an electron lens barrel 102 (electron beam column) and a drawing chamber 103. An electron gun 201, an illumination lens 202, a forming aperture array substrate 203, a blanking aperture array mechanism 204, a reduction lens 205, a limiting aperture substrate 206, an objective lens 207, a deflector 208, and a deflector 209 are arranged in the electron lens barrel 102.

[0076] An XY stage 105 is arranged in the drawing chamber 103. A sample 101 such as a mask that becomes a drawing target substrate during drawing (exposure) is arranged on the XY stage 105. The sample 101 includes an exposure mask when manufacturing a semiconductor device or a semiconductor substrate (silicon wafer) for manufacturing a semiconductor device. In addition, the sample 101 includes a mask blank that is coated with a resist and has not yet been drawn. As the glass substrate of the sample 101, a low thermal expansion (LTEM) substrate is used.

[0077] Furthermore, a reflection mirror 210 for measuring the position of the XY stage 105 is arranged on the XY stage 105 .

[0078] The control system circuit 160 includes a control computer 110, a memory 112, a deflection control circuit 130, digital-analog conversion (DAC) amplifier units 132 and 134, a lens control circuit 136, a stage control mechanism 138, a stage position measuring device 139, and storage devices 140 and 142 such as a magnetic disk device. The control computer 110, the memory 112, the deflection control circuit 130, the lens control circuit 136, the stage control mechanism 138, the stage position measuring device 139, and the storage devices 140 and 142 are connected to each other via a bus not shown. The deflection control circuit 130 is connected to the DAC amplifier units 132 and 134 and the blanking aperture array mechanism 204. The deflector 209 is composed of electrodes of four or more poles, and is controlled by the deflection control circuit 130 via the DAC amplifier 132 for each electrode. The deflector 208 is composed of electrodes of four or more poles, and is controlled by the deflection control circuit 130 via the DAC amplifier 134 for each electrode. The illumination lens 202 , the reduction lens 205 , and the objective lens 207 , which are, for example, an electromagnetic lens group, are controlled by a lens control circuit 136 .

[0079] The position of the XY stage 105 is controlled by driving motors of the axes (not shown) controlled by the stage control mechanism 138. The stage position measuring device 139 receives reflected light from the reflection mirror 210 and measures the position of the XY stage 105 based on the principle of laser interferometry.

[0080] The control computer 110 includes a dose map creation unit 50, a final position shift calculation unit 52, a position shift calculation unit 54 during drawing, a correction calculation unit 56, a correction map creation unit 58, a transmission data generation unit 70, a data processing unit 72, a transmission processing unit 74, and a drawing control unit 76. Each of the “units” such as the dose map creation unit 50, the final position shift calculation unit 52, the position shift calculation unit 54 during drawing, the correction calculation unit 56, the correction map creation unit 58, the transmission data generation unit 70, the data processing unit 72, the transmission processing unit 74, and the drawing control unit 76 has a processing circuit. Such a processing circuit includes, for example, an electric circuit, a computer, a processor, a circuit substrate, a quantum circuit, or a semiconductor device. Each of the “units” may use a common processing circuit (the same processing circuit) or may use a different processing circuit (separate processing circuits). The information input and output to and from the dose map production unit 50, the final position offset calculation unit 52, the position offset calculation unit 54 during drawing, the correction amount calculation unit 56, the correction amount map production unit 58, the emission data generation unit 70, the data processing unit 72, the transmission processing unit 74 and the drawing control unit 76, as well as the information in operation, are each stored in the memory 112.

[0081] The drawing operation of the drawing device 100 is controlled by the drawing control unit 76. In addition, the transmission processing unit 74 controls the transmission processing of the irradiation time data of each shot to the deflection control circuit 130.

[0082] In addition, drawing data (chip data) is input from the outside of the drawing device 100 and stored in the storage device 140. In the chip data, information of multiple graphic patterns constituting the chip pattern is defined. Specifically, for each graphic pattern, for example, a coordinate column of each vertex coordinate is defined. In addition, a graphic code or the like may also be defined. Alternatively, a graphic code, coordinates, and size may also be defined.

[0083] Here, in Figure 1 , the configuration required for describing Embodiment 1 is described. The drawing device 100 may generally include other necessary configurations.

[0084] Figure 2 1 is a conceptual diagram showing the structure of a formed aperture array substrate according to Embodiment 1. Figure 2 In the forming aperture array substrate 203, holes (openings) 22 are formed in a matrix with p columns in the vertical direction (y direction) and q columns in the horizontal direction (x direction) (p, q ≥ 2) at a predetermined arrangement pitch. Figure 2 In the example, for example, a case where 512×512 columns of holes 22 are formed in the vertical and horizontal directions (x and y directions) is shown. The number of holes 22 is not limited to this. For example, 32×32 columns of holes 22 may be formed. Each hole 22 is formed in a rectangular shape of the same size. Alternatively, it may be a circle of the same diameter. Parts of the electron beam 200 pass through the above-mentioned multiple holes 22 respectively, thereby forming a multi-beam 20. In other words, the forming aperture array substrate 203 forms and emits the multi-beam 20. The forming aperture array substrate 203 becomes an example of an emission source of the multi-beam 20.

[0085] Figure 3 2 is a cross-sectional view showing the structure of the blanking aperture array mechanism of Embodiment 1. Figure 3 As shown, the blanking aperture array mechanism 204 is provided with a blanking aperture array substrate 31 using a semiconductor substrate made of silicon or the like on a support substrate 33. In the central portion of the blanking aperture array substrate 31, a diaphragm region 330 is formed in contact with the diaphragm region 330. Figure 2The positions corresponding to the holes 22 of the shaped aperture array substrate 203 shown are provided with through holes 25 (openings) for each beam of the multi-beam 20 to pass through. In addition, a group of control electrodes 24 and opposing electrodes 26 (blanking devices: blanking deflectors) are respectively arranged at positions opposite to each other across the corresponding through holes 25 among the plurality of through holes 25. In addition, a control circuit 41 (logic circuit) for applying a deflection voltage to the control electrodes 24 for each through hole 25 is arranged inside the blanking aperture array substrate 31 near each through hole 25. The opposing electrodes 26 for each beam are grounded.

[0086] An amplifier (an example of a switch circuit) not shown in the figure is arranged in the control circuit 41. As an example of an amplifier, a CMOS (Complementary MOS) inverter circuit serving as a switch circuit is arranged. As a control signal, either an L (low) potential (for example, a ground potential) lower than a threshold voltage or an H (high) potential (for example, 1.5 V) higher than a threshold voltage is applied to the input (IN) of the CMOS inverter circuit. In Embodiment 1, in a state where an L potential is applied to the input (IN) of the CMOS inverter circuit, the output (OUT) of the CMOS inverter circuit applied to the control circuit 41 is a positive potential (Vdd), and the corresponding beam is deflected by an electric field generated by a potential difference with the ground potential of the opposing electrode 26, and is shielded by the limiting aperture substrate 206, thereby controlling the beam to be cut off. On the other hand, when the H potential is applied to the input (IN) of the CMOS inverter circuit (active state), the output (OUT) of the CMOS inverter circuit becomes the ground potential, and the potential difference with the ground potential of the counter electrode 26 disappears, and the corresponding beam is not deflected, so the beam is controlled to be on by the limiting aperture substrate 206. Blanking control is performed by this deflection.

[0087] Next, a specific example of the operation of the drawing mechanism 150 is described. The electron beam 200 emitted from the electron gun 201 (emission source) illuminates the entire forming aperture array substrate 203 approximately vertically with the aid of the illumination lens 202. A plurality of rectangular holes 22 (openings) are formed in the forming aperture array substrate 203, and the electron beam 200 illuminates the area including all the plurality of holes 22. Each portion of the electron beam 200 irradiated to the position of the plurality of holes 22 passes through the plurality of holes 22 of the forming aperture array substrate 203, thereby forming, for example, a rectangular multi-beam (multiple electron beams) 20. The multi-beam 20 passes through the corresponding blankers of the blanking aperture array mechanism 204. The blanker performs blanking control on the beams that pass through individually, so that the beams become turned on during the set drawing time (irradiation time).

[0088] The multi-beam 20 after passing through the blanking aperture array mechanism 204 is reduced by the reduction lens 205 and travels toward the hole formed in the center of the limiting aperture substrate 206. Here, the position of the electron beam deflected by the blanker of the blanking aperture array mechanism 204 deviates from the hole in the center of the limiting aperture substrate 206 and is blocked by the limiting aperture substrate 206. On the other hand, Figure 1 As shown, the electron beams not deflected by the blanker of the blanking aperture array mechanism 204 pass through the hole in the center of the limiting aperture substrate 206. In this way, the limiting aperture substrate 206 blocks each beam deflected by the blanker of the blanking aperture array mechanism 204 to a beam cut-off state. Then, each beam emitted once is formed by the beam formed from the beam on to the beam cut-off after passing through the limiting aperture substrate 206. The multi-beam 20 after passing through the limiting aperture substrate 206 is focused by the objective lens 207 to form a pattern image of a desired reduction ratio. The multi-beam 20 after passing through the limiting aperture substrate 206 is deflected in the same direction as a whole by the deflector 208 and the deflector 209, and irradiates each irradiation position on the sample 101 of each beam. In addition, for example, when the XY stage 105 moves continuously, tracking control is performed by the deflector 208 so that the irradiation position of the beam follows the movement of the XY stage 105. The multiple beams 20 for one irradiation are ideally arranged at a pitch obtained by multiplying the arrangement pitch of the multiple holes 22 of the aperture array substrate 203 by the above-mentioned desired reduction ratio.

[0089] Here, by using the LTEM substrate as the drawing target sample, thermal expansion caused by irradiation of a single beam or multiple beams of electron beams is almost eliminated. Therefore, the problem of positional deviation of the drawing position caused by thermal expansion can be greatly improved to a negligible level. However, it is known that the accumulation of doses accompanying multiple electron beam irradiations causes irreversible shrinkage in the glass substrate serving as the sample 101.

[0090] Figure 4 1 is a diagram showing an example of an evaluation substrate of Embodiment 1. An LTEM substrate is used as the evaluation substrate. Specifically, a mask blank is used in which, for example, a chromium (Cr) film is formed on the LTEM substrate and a resist film is formed on the Cr film. Figure 4An example of a pattern in a state where three drawing processes are performed is shown in FIG. Each drawing process is performed in the y direction from the lower side to the upper side of the evaluation substrate. In the first drawing process (1S), a plurality of cross patterns are drawn in a grid shape on the entire evaluation substrate. In the second drawing process (2S), an L-shaped pattern is drawn near each cross pattern, for example, at the upper right and lower left, and a rectangular pattern with a changed pattern density is drawn on the lower half and the upper half of the evaluation substrate as the background of the plurality of cross patterns. For example, the background of the lower half drawn in the first half is set to a pattern density of, for example, 3%. The background of the upper half drawn in the second half is set to a pattern density of, for example, 75%. In the third drawing process (3S), an L-shaped pattern is drawn near each cross pattern, for example, at the upper left and lower right. After each drawing process, the position of each drawn pattern is measured. The position of the pattern is measured by a position measuring device not shown.

[0091] Figure 5 1 is a diagram showing an example of the relationship between the positional deviation amount of the evaluation substrate and an example of the deformation of the substrate in Embodiment 1. Figure 5 , an example of a graph of the positional offset Δx in the x direction in the state of (2S-1S) where the position of each pattern after 2S of drawing processing is subtracted from the position of each pattern after 1S of drawing processing. As shown in the graph of (2S-1S), it can be seen that the positional offset Δx is small when the background is a pattern density of 3%, while the positional offset Δx increases as the area subjected to drawing processing increases when the background is a pattern density of 75%. It can be seen from this that the deformation caused by the shrinkage of the glass substrate increases depending on the irradiation amount.

[0092] In addition, Figure 5 In the figure, there are shown an example of a graph of the positional offset Δx in the x direction in the state of (3S-1S), which is the state where the position of each pattern after 1S of drawing processing is subtracted from the position of each pattern after 3S of drawing processing, and an example of a graph of the positional offset Δy in the y direction. As shown in the graph of (3S-1S), it is shown that the positional offset Δx under 2S continues to remain after 3S. In addition, it can be seen that the lower half of the substrate is also deformed according to the contraction of the upper half of the substrate, and at the stage of 3S, the position of the substrate is offset, and the positional offset Δx becomes larger. In addition, it can be seen that in the upper half of the substrate, the positional offset ΔY in the y direction also gradually increases. This is because, as shown in the graph of (3S-1S), the positional offset Δx under 2S continues to remain after 3S. In addition, it can be seen that the positional offset ΔY in the y direction also gradually increases in the upper half of the substrate. Figure 5 As shown in the lower right figure of , a relatively large amount of radiation is irradiated to the upper half of the substrate, causing deformation due to large contraction in the upper half. As shown in the figure, due to 2S, deformation due to large contraction occurs in the upper half of the substrate.

[0093] Figure 6This is a diagram showing an example of a state when the evaluation substrate is irradiated with a beam according to the first embodiment.

[0094] Figure 7 This is a diagram showing an example of a stress state caused by beam irradiation on an evaluation substrate according to the first embodiment.

[0095] As Figure 6 The evaluation substrate, as described above, uses a mask blank in which, for example, a chromium (Cr) film 13 is formed on an LTEM substrate 12 and a resist film 16 is formed on the Cr film 13. When such an evaluation substrate is irradiated with an electron beam, the electron beam reaches the LTEM substrate 12 and penetrates about 10 μm from the surface of the LTEM substrate 12. As a result, irreversible local shrinkage occurs at the irradiated position of the LTEM substrate 12. By performing beam irradiation at multiple locations, tensile stress is generated near the surface of the substrate due to each local shrinkage in the entire area irradiated by the beam. As a result, irreversible deformation occurs near the surface of the LTEM substrate 12 due to the shrinkage phenomenon. In addition, relative to the thickness dimension of the LTEM substrate 12 (for example, 6.35 mm), the deformation of a depth of, for example, 20 μm is relatively small in volume, and therefore, the thermal deformation properties of the entire substrate do not change. Therefore, the reversible deformation caused by thermal expansion can be ignored.

[0096] Figure 8 This is a diagram showing an example of a state of positional deviation of the substrate surface in Comparative Example 1 of Embodiment 1.

[0097] Fig. 9 This is a diagram showing an example of deformation of the substrate surface in Comparative Example 1 of Embodiment 1.

[0098] exist Figure 8 as well as Fig. 9 , a state before the drawing process starts, a state when drawing at a desired position, and a state after the drawing process is completed are respectively shown.

[0099] exist Figure 8 In the figure, the designed beam irradiation position is represented by vector A. By drawing the target LTEM substrate, at the time of drawing the position of vector A, Fig. 9 As shown in FIG. 1 , the position of vector A before the drawing process starts is physically moved to the position of vector B due to the deformation caused by the shrinkage of the substrate. Then, the drawing process is further performed, and after the drawing process of the entire substrate is completed, as shown in FIG. Fig. 9As shown, due to further deformation, the position of vector A before the start of the drawing process is physically moved to the position of vector C. Therefore, when the position of vector A before the start of the drawing process is directly drawn, after the drawing process of the entire substrate is completed, the drawn beam irradiation position is shifted from the position of vector A before the start of the drawing process by the position of the vector (vector A+(vector C-vector B)) indicated by (vector C-vector B). Therefore, in embodiment 1, even when such irreversible deformation occurs in the substrate, the irradiation position (pattern formation position) during drawing is corrected so that the beam irradiation position becomes the position of vector A before the start of the drawing process after the drawing process is completed.

[0100] Fig.10 FIG. 1 is a diagram showing an example of a state where the position of the substrate surface is shifted in Embodiment 1. Fig. 9 Same. Fig.10 In the figure, the designed beam irradiation position is represented by vector A. By drawing the target LTEM substrate, at the time of drawing the position of vector A, Fig. 9 As shown in FIG. 1 , the position of vector A before the drawing process starts is physically moved to the position of vector B due to the deformation caused by the shrinkage of the substrate. Then, the drawing process is further performed, and after the drawing process of the entire substrate is completed, as shown in FIG. Fig. 9 As shown, due to further deformation, the position of vector A before the start of the drawing process is physically moved to the position of vector C. Therefore, when drawing, the position (vector A+(vector B-vector C)) after the vector correction shown by (vector B-vector C) from the position of vector A before the start of the process is drawn as the beam irradiation position (or pattern formation position). As a result, after the drawing process of the entire substrate is completed, the drawn beam irradiation position (or pattern formation position) is at the position of vector A that is moved from the position (vector A+(vector B-vector C)) by the vector shown by (vector C-vector B).

[0101] Fig.11 1 is a flowchart showing an example of the main process of the drawing method of embodiment 1. Fig.11 , a flowchart is shown for the case where the drawing process is performed in real-time mode while performing calculation processing for correcting the beam irradiation position (or pattern formation position) of the next area. Fig.11In the drawing method of embodiment 1, a series of steps are implemented, including a dose mapping preparation step (S102), a final position offset (vector C) calculation step (S104), a drawing schedule preparation step (S106), a drawing position offset (vector B) calculation step (S108), a correction amount calculation step (S110), a drawing step (S170), and a judgment step (S172).

[0102] Fig.12 FIG. 1 is a flowchart showing another example of the main process steps of the drawing method of Embodiment 1. Fig.12 , a flowchart is shown in the case where the drawing process is performed in a pre-processing mode in which the drawing operation is started after the calculation process of the beam irradiation position (or pattern formation position) of all regions is performed as pre-processing. Fig.12 In the drawing method of embodiment 1, a series of steps are implemented, including a dose mapping preparation step (S102), a final position offset (vector C) calculation step (S104), a drawing schedule preparation step (S106), a drawing position offset (vector B) calculation step (S108), a correction amount calculation step (S110), a determination step (S112), a correction amount mapping preparation step (S114), and a drawing step (S170).

[0103] The drawing process is performed for each strip area described later, which is formed by dividing the drawing area of ​​the sample 101 in the y direction. In the real-time mode, the drawing operation of the kth strip area and the correction calculation process of the k+mth strip area are performed at the same time. In the pre-processing mode, the drawing operation starts after the correction calculation process of all the strip areas is completed.

[0104] As a dose map production process (S102), the dose map production unit 50 produces a dose map that defines the dose for each pixel described later. Specifically, the operation is performed as follows. The dose map production unit 50 first divides the drawing area (for example, a strip area) into a plurality of adjacent grid areas (grid areas for proximity effect correction calculation) in a grid-like manner with a prescribed size. The size of the adjacent grid area is preferably set to about 1 / 10 of the influence range of the proximity effect, for example, about 1 μm. The dose map production unit 50 reads the drawing data from the storage device 140, and for each adjacent grid area, calculates the pattern area density ρ″ of the pattern configured in the adjacent grid area.

[0105] Next, the dose mapping production unit 50 calculates the proximity effect correction irradiation coefficient Dp(x) for correcting the proximity effect for each neighboring grid area. The unknown proximity effect correction irradiation coefficient Dp(x) can be defined by a threshold model for proximity effect correction that is the same as the existing method, using the backscatter coefficient η, the irradiation threshold Dth of the threshold model, the pattern area density ρ″, and the distribution function g(x).

[0106] Next, the dose map preparation unit 50 calculates the incident irradiation amount D(x) (dose) for irradiating the pixel for each pixel. The incident irradiation amount D(x) can be calculated as, for example, a value obtained by multiplying the reference irradiation amount Dbase by the proximity effect correction irradiation coefficient Dp and the pattern area density ρ'. The reference irradiation amount Dbase can be defined, for example, as Dth / (1 / 2+η). According to the above, the incident irradiation amount D(x) of each pixel corrected for the proximity effect based on the layout of multiple graphic patterns defined in the drawing data can be obtained. Alternatively, the dose map preparation unit 50 calculates the irradiation coefficient for irradiating the pixel for each pixel. The irradiation coefficient d(x) can be calculated as, for example, a value obtained by multiplying the proximity effect correction irradiation coefficient Dp by the pattern area density ρ'. In other words, it can be calculated as the modulation rate of the reference irradiation amount Dbase. Thus, the irradiation amount (irradiation coefficient) d(x) can be obtained not as an absolute value of the irradiation amount, but as a relative value standardized by setting the reference irradiation amount Dbase to 1.

[0107] Next, the dose map preparation unit 50 prepares a dose map with the irradiation amount of each pixel as an element. In other words, each pixel (position) (x, y) is defined in association with the irradiation amount D (or d) of the pixel. The prepared dose map is stored in the storage device 142. The dose map preparation unit 50 prepares a dose map for the entire drawing process performed according to the drawing data (chip data).

[0108] As a final position shift amount (vector C) calculation step (S104), the final position shift amount calculation unit 52 calculates the final position shift amount (first position shift amount) from the designed position of the pattern due to the irreversible deformation of the sample 101 after the drawing process is completed when the sample 101 that is irreversibly deformed due to the irradiation amount distribution of the electron beam is irradiated with an electron beam to draw a pattern. In other words, the final position shift amount calculation unit 52 calculates the final position shift amount (first position shift amount) of the formation position of the pattern or the beam irradiation position from the designed position due to the irreversible deformation of the sample 101 after the drawing process is completed when the sample 101 that is irreversibly deformed due to the irradiation of the electron beam is drawn with an electron beam. Specifically, the final position shift amount calculation unit 52 calculates the position shift amount (vector C) of each position after the drawing process is completed for the sample 101.

[0109] The influence range of the global position offset is in the range of several hundred μm to several mm. Therefore, the influence range of the global position offset is larger than the beam array size (x direction and y direction) of the multi-beam 20, which is, for example, several tens of μm. Therefore, the final position offset calculation unit 52 first calculates Fig.15 As shown, the area of ​​the sample 101 surface is virtually divided into a plurality of global grid areas 11 in a grid shape with a predetermined size. The size of the global grid area 11 is preferably set to about 1 / 10 of the influence range of the global position offset, about tens of μm to hundreds of μm. For example, when the beam array size is about 80 μm, it is preferably set to about half of it, about 40 μm. However, it is not limited to the case of being smaller than the beam array size. It can also be a size larger than the beam array size.

[0110] Then, the final position offset calculation unit 52 calculates the vector C of the representative point (e.g., the center position) in each global grid area 11 (position). Each vector C is calculated as a final position offset (dxfinal-i, dyfinal-i). i represents the index of each global grid area 11. The final position offset of the global grid area 11 including the pattern formation position or the beam irradiation position is equivalent to the final position offset of the pattern formation position or the beam irradiation position.

[0111] The final position offset (dxfinal-i, dyfinal-i) of each global mesh region 11 depends on the irradiation amount (irradiation coefficient) defined in the dose map, and can be calculated using the finite element method, for example.

[0112] Fig.13 FIG. 1 is a diagram showing an example of the relationship between the reduction ratio and the dose of the substrate in Embodiment 1. Fig.13 In the figure, the vertical axis represents the reduction rate and the horizontal axis represents the dose. Fig.13In the example, the pattern area density ρ and the irradiation dose D are variably changed in the bare chips a to d. Then, the strain (reduction rate: ΔL / L) of each bare chip is calculated, and the relationship between the strain (reduction rate) and ρD (total dose per unit area) is calculated. L represents the size of the substrate, and ΔL represents the positional offset. Fig.13 As shown in the example of , it can be seen that the strain (reduction rate) increases in proportion to ρD. Therefore, the strain (reduction rate) can be obtained using the irradiation amount (irradiation coefficient) defined in the dose map.

[0113] Fig.14 FIG. 1 is a diagram showing an example of a model based on the finite element method in Embodiment 1. Fig.14 In the example of FIG. 1 , a state in which a 6-inch mask as an example of sample 101 is divided by triangular pyramid elements is shown.

[0114] A triangular pyramid element has four vertices, each of which has a displacement vector u = (u x ,u y ,u z ) is three-dimensional displacement information. That is, there are a total of 4×3=12 variables in one unit element. In the relationship between the displacement vector u(12×1) and the strain vector ε(6×1) ε=Bu, as an example, the strain-displacement matrix M1(6×12) of the unit element is represented by the following formula (1).

[0115] (1)

[0116] On the other hand, in the relationship between the stress vector σ(6×1) and the strain vector ε(6×1), σ=Dε, the material property matrix M2(6×6) of the unit element is expressed as shown in the following equation (2) using the Young's modulus E and Poisson's ratio v of the quartz substrate.

[0117] (2)

[0118] Here, the strain e of the substrate surface caused by the charged particle beam irradiation amount Q (=ρD) is defined by the following equation (3) using coefficients c0 and c1.

[0119] (3) e = c0 + c1·Q

[0120] Then, if the shear strain generated by the charged particle beam irradiation is assumed to be zero, the unit element strain vector ε can be defined by the following equation (4).

[0121] (4)∈ t ={eee 0 0 0}

[0122] Then, the rigidity matrix per unit element is expressed by the following equation (5).

[0123] (5)B t M2 t Bu=B t M2 t ε

[0124] Here, t refers to the transposed matrix.

[0125] By combining the above equations for all elements, the displacement vector U of all vertices, the overall rigidity matrix K, and the equivalent nodal force f are defined as follows: (6-1), (6-2), and (6-3).

[0126] (6-1)∫(B t M2 t B)dV·U=∫(B t M2 t ε)dV

[0127] (6-2)K=∫(B t M2 t B)dV

[0128] (6-3)f=∫(B t M2 t ε)dV

[0129] The result is expressed by the following formula (7).

[0130] (7)KU=f

[0131] Then, finally, the total displacement vector U can be calculated by the following equation (8).

[0132] (8) U = K -1 f

[0133] In order to calculate the final position offset (dxfinal-i, dyfinal-i) of each position, first, substitute the value of the element of the dose map made according to the layout into Q of formula (3), thereby obtaining the strain e of each element and the strain vector ε of formula (4). Then, f of formula (6-3) is obtained under the strain vector ε of each element obtained to solve formula (8), thereby obtaining the total displacement vector U including the displacement vector u of each element when all the dose irradiation is completed, and the displacement amount (u) of each element is obtained based on the displacement vector u of each element. x ,u y ) as the final position offset (dxfinal-i, dyfinal-i).

[0134] The calculated final position deviation amount of each position is stored in the storage device 142 .

[0135] As a drawing schedule preparation step (S106), the drawing control unit 76 prepares a drawing schedule that defines the shot order of each pixel defined in the dose map. Thus, for each shot, the position and irradiation amount before the shot (drawing) are known.

[0136] As a drawing position shift amount (vector B) calculation step (S108), the drawing position shift amount calculation unit 54 calculates the drawing position shift amount (second position shift amount) of the pattern from the designed position of the pattern caused by the irreversible deformation of the sample 101 caused by the electron beam irradiating the sample 101 before the irradiation time at the irradiation time of the electron beam during the drawing process. In other words, the drawing position shift amount calculation unit 54 calculates the drawing position shift amount (second position shift amount) of the pattern formation position or the beam irradiation position from the designed position when the object is irradiated with the electron beam, which is caused by the irreversible deformation of the sample 101 caused by the electron beam irradiating the sample 101 before the irradiation of the electron beam of the object. Specifically, the drawing position shift amount calculation unit 54 calculates the drawing position shift amount (vector B) of the representative position in each global grid area 11. The vector B of each global grid area 11 is calculated as the drawing position shift amount (dxwrite-n, dywrite-n). n represents the index of each global grid area 11. The position offset when drawing the global grid area 11 including the formation position of the pattern or the beam irradiation position is equivalent to the position offset when drawing the formation position of the pattern or the beam irradiation position. The position offset when drawing each global grid area 11 (dxwrite-n, dywrite-n) depends on the irradiation amount (irradiation coefficient) defined in the dose map, and as described above, for example, can be calculated in the same way using the finite element method. Specifically, the irradiation amount of each element when the irradiation is completed up to n in the irradiation amount defined in the dose map is substituted into Q of formula (3) to calculate the strain e of each element and the strain vector ε of formula (4). Then, f of formula (6-3) is calculated under the obtained strain vector ε of each element to solve formula (8), thereby, the total displacement vector U including the displacement vector u of each element when the irradiation is completed up to n can be calculated, and the displacement of each element (u) is calculated based on the displacement vector u of each element. x ,u y ) as the position offset when drawing (dxwrite-n, dywrite-n).

[0137] In the above example, the position offset during drawing is calculated for each global grid area 11, but the present invention is not limited thereto. The position offset during drawing may be calculated for each representative position of the beam array during actual transmission (for example, the center position or the position of the center beam).

[0138] As a correction amount calculation step (S110), the correction amount calculation unit 56 calculates a correction amount (vector B-vector C) (first correction amount) for correcting the position of a pattern or the irradiation position of the electron beam when the sample 101 is irradiated with an electron beam to form a pattern based on the final position shift amount. In other words, the correction amount calculation unit 56 calculates a correction amount (vector B-vector C) (first correction amount) for correcting the formation position of a pattern or the beam irradiation position when the sample 101 is irradiated with the multi-beam 20 (electron beam) based on the final position shift amount caused by the irreversible deformation of the sample 101 after the drawing is completed. The correction amount (vector B-vector C) (first correction amount) is calculated based on the difference between the position shift amount (vector B) at the drawing time and the position shift amount (vector C) at the final time. In other words, the correction amount (dxn, dyn) of each position in the global grid area 11 of the nth beam irradiation (drawing) can be calculated by the position shift amount (dxwrite-n, dywrite-n) at the drawing time minus the final position shift amount (dxfinal-n, dyfinal-n).

[0139] The correction amount map creating unit 58 creates a correction amount map defining the correction amount (dxn, dyn) for each global mesh region (xn, yn). The correction amount map is stored in the storage device 142 .

[0140] When the processing up to the calculation of the correction amount is completed in the strip area unit, the process proceeds to the drawing step ( S170 ) in the real-time mode.

[0141] Fig.15 1 is a conceptual diagram for explaining an example of a drawing operation in Implementation Example 1. Fig.15 As shown, the position of the drawing area 30 (bold line) of the sample 101 is defined based on the position of the alignment mark 14 .

[0142] The drawing area 30 (bold line) is virtually divided into a plurality of strip-shaped areas 32 with a predetermined width in the y direction, for example. Fig.15 In the example of FIG. 1 , a case is shown where the drawing area 30 of the sample 101 is divided into a plurality of strip areas 32 in the y direction with a width dimension substantially the same as the dimension of the designed irradiation area 34 (beam array area) that can be irradiated by irradiation of the multi-beam 20 once. The dimension of the irradiation area 34 of the designed multi-beam 20 in the x direction can be defined as the number of beams in the x direction×the spacing between beams in the x direction. The dimension of the rectangular irradiation area 34 in the y direction can be defined as the number of beams in the y direction×the spacing between beams in the y direction.

[0143] First, the XY table 105 is moved and adjusted so that the irradiation area 34 of the multi-beam 20 is located at the left end or further to the left of the first strip area 32, and the first strip area 32 is depicted. When depicting the first strip area 32, the XY table 105 is moved in the -x direction, for example, so that the depiction is relatively performed in the x direction. The XY table 105 is continuously moved at a constant speed, for example. After the depiction of the first strip area 32 is completed, the table position is moved in the -y direction by the width of the strip area 32.

[0144] Then, the irradiation area 34 of the multi-beam 20 is adjusted to be located at the left end or further to the left of the second strip area 32, and the XY table 105 is moved in the -x direction, for example, to draw relatively in the x direction, thereby drawing the second strip area 32. In the following, similarly, the drawing is sequentially performed from the lower strip area 32 toward the upper side (y direction).

[0145] In addition, Fig.15 In the example of , the case where each strip area 32 is depicted in the same direction is shown, but it is not limited to this. For example, it may be the following case: for the strip area 32 to be depicted next to the strip area 32 depicted in the x direction, the XY table 105 is moved in the x direction, for example, so that the depiction is performed in the -x direction. In this way, the depiction is performed while the direction is alternately changed, thereby shortening the worktable movement time and further shortening the depiction time. In one emission, a plurality of emission patterns, the same number as the holes 22 at most, are formed at one time using the multi-beam 20 formed by the holes 22 of the forming aperture array substrate 203.

[0146] Fig.16 FIG. 1 is a diagram showing an example of a multi-beam irradiation area and a drawing target pixel according to Embodiment 1. Fig.16 In the embodiment, the strip area 32 is divided into a plurality of grid areas in a grid shape, for example, according to the beam size of the multi-beam 20. Each of these grid areas becomes a pixel 36 (unit irradiation area, irradiation position or irradiation position) of the depicted object. The size of the depicted object pixel 36 is not limited to the beam size, and can also be configured with any size regardless of the beam size. For example, it can also be configured with a size of 1 / n (n is an integer greater than 1) of the beam size. Fig.16 In the example, the case where the drawing area of ​​the sample 101 is divided into a plurality of strip areas 32 in the y direction with a width dimension substantially the same as the dimension of the irradiation area 34 (drawing field) that can be irradiated by irradiation of the multi-beam 20 once is shown. The dimension of the rectangular irradiation area 34 in the x direction can be defined as the number of beams in the x direction × the spacing between beams in the x direction. The dimension of the rectangular irradiation area 34 in the y direction can be defined as the number of beams in the y direction × the spacing between beams in the y direction. Fig.16 In the example, for example, the illustration of a 512×512-column multi-beam is omitted and shown as an 8×8-column multi-beam. Furthermore, a plurality of pixels 28 (beam drawing positions) that can be irradiated by emitting the multi-beam 20 once are shown in the irradiation area 34. The spacing between adjacent pixels 28 becomes the spacing between each beam of the multi-beam. A secondary irradiation area 29 (spacing unit) is formed by a rectangular area surrounded by the size of the beam spacing in the x and y directions. Fig.16 In the example of FIG. 1 , the case where each sub-irradiation region 29 is composed of, for example, 4×4 pixels is shown.

[0147] As a drawing process (S170), first, the emission data generating unit 70 calculates the incident irradiation amount D(x) (dose) for irradiating the pixel 36 for each pixel 36. The incident irradiation amount D(x) can be calculated as a value obtained by multiplying the reference irradiation amount Dbase by the proximity effect correction irradiation coefficient Dp and the pattern area density ρ', for example. The reference irradiation amount Dbase can be defined as Dth / (1 / 2+η), for example. According to the above, the incident irradiation amount D(x) of each pixel 36 corrected for the proximity effect based on the layout of multiple graphic patterns defined in the drawing data can be obtained. In other words, the incident irradiation amount D(x) (dose) is calculated by multiplying the irradiation amount defined in the dose map by the reference irradiation amount Dbase. When the incident irradiation amount D(x) (dose) is defined in the dose map, it can be used directly.

[0148] Next, the emission data generation section 70 calculates the irradiation time for each pixel 36. The irradiation time for each pixel 36 can be calculated by dividing the incident irradiation amount D(x) by the current density J of the pixel.

[0149] Then, the data processing unit 72 rearranges the obtained irradiation time data for each pixel 36 in the transmission order and stores it in the storage device 142. The transmission processing unit 74 transmits the irradiation time data to the deflection control circuit 130 in the transmission order.

[0150] Under the control of the drawing control unit 76, the drawing mechanism 150 draws a pattern on the sample 101 using the multi-beam 20 (electron beam) based on the beam irradiation position corrected by the correction amount. In other words, the drawing mechanism 150 corrects the position of the pattern when the sample 101 is irradiated with the electron beam to form the pattern or the irradiation position of the electron beam based on the final position deviation, and performs a drawing process of drawing the pattern on the sample 101. The drawing mechanism 150 performs such correction based on the difference between the position deviation amount during drawing and the final position deviation amount. The drawing mechanism 150 draws while moving the XY stage 105. Specifically, under the control of the deflection control circuit 130 (an example of a correction unit), the deflector 208 deflects the beam array (irradiation area) to a position corrected by the correction amount (dxn, dyn) of the global grid area 11 including the representative position of the beam array (for example, the center position or the position of the center beam) in each tracking cycle of the multi-beam 20 described later. The deflection position of the beam array (irradiation area 34) is set based on the representative position of the beam array (for example, the center position or the position of the center beam).

[0151] Fig.17 FIG. 1 is a diagram for explaining an example of a multi-beam imaging operation according to Embodiment 1. Fig.17 In the example of FIG. 1 , the case where each sub-irradiation area 29 including each beam irradiation position of the multi-beam 20 and surrounded by the inter-beam spacing is depicted by four different beams. Fig.17 In the example of FIG. 1 , the XY stage 105 is continuously moved at a speed corresponding to a distance of, for example, two beam pitches while depicting a 1 / 4 (one-third of the number of beam roots used for irradiation) area within each secondary irradiation area 29. Fig.17 In the example of FIG. 1 , the case where each sub-irradiation region 29 is composed of, for example, 4×4 pixels is shown.

[0152] exist Fig.17 In the depiction action shown in the example, for example, while the XY worktable 105 moves in the x direction by a distance equal to two beam spacings, the multi-beam 20 is emitted four times with an emission cycle T while the irradiation position (pixel 36) is shifted in sequence by the deflector 209, thereby depicting (exposing) four different pixels 36 in the same sub-irradiation area 29. While depicting (exposing) these four pixels 36, the multi-beam 20 is deflected as a whole by the deflector 208, thereby causing the irradiation area 34 to follow the movement of the XY worktable 105, so as to prevent the relative position of the irradiation area 34 from being offset from the sample 101 due to the movement of the XY worktable 105. In other words, tracking control is performed. Fig.17In the example of FIG. 1 , the tracking cycle is exemplified by the time required for the XY stage 105 to move a distance equal to two beam pitches in the x direction, but the tracking cycle is not limited thereto. The tracking cycle may also be exemplified by the time required for the XY stage 105 to move a distance greater than two beam pitches, such as a distance equal to eight beam pitches or a distance equal to 16 beam pitches.

[0153] When one tracking cycle is finished, the tracking reset is performed and the tracking starts at the last tracking position. In addition, since the drawing of the first pixel column from the left of each auxiliary irradiation area 29 is finished, after the tracking reset is performed, in the next tracking cycle, first, the deflector 209 is deflected in such a way that the drawing position of the beam different from the first pixel column is aligned (shifted) so as to draw the pixel column that has not been drawn in each auxiliary irradiation area 29, such as the second pixel column from the left. In the drawing of the strip area 32, by repeating this action, as shown in FIG. Fig.15 As shown in the lower figure, the position of the irradiation area 34 (34a~34o) of the multi-beam 20 is moved sequentially and depicted.

[0154] Therefore, under the control of the deflection control circuit 130, the deflector 208 deflects the beam array to a position corrected by the correction amount (dxn, dyn) of the global grid area 11 including the representative position of the beam array (for example, the center position or the position of the center beam) in each tracking cycle. In the tracking cycle, at this position, while each beam depicts (exposes) for example 4 pixels 36, the multi-beam 20 is deflected as a whole by the deflector 208, thereby causing the beam array (irradiation area 34) to follow the movement of the XY worktable 105 to prevent the relative position of the beam array (irradiation area 34) from being offset from the sample 101 due to the movement of the XY worktable 105.

[0155] In addition, if Fig.15 As shown in the figure below, the position of the irradiation area 34 (34a to 34o) of the multi-beam 20 gradually moves. Therefore, there is a situation where the multi-beam 20 is emitted in a state where the irradiation area 34 (beam array) crosses between adjacent global grid areas 11. Including this case, it is sufficient to use the correction amount (dxn, dyn) of the global grid area 11 including the representative position (for example, the center position or the position of the center beam) of the irradiation area 34 (beam array).

[0156] In addition, Fig.11 In the real-time mode shown, the emission data for the stripe area 32 to be subsequently rendered is generated in parallel with the rendering process. For example, the emission data for the k+2th stripe area 32 is generated in parallel with the rendering of the kth stripe area 32.

[0157] As a determination step (S172), the drawing control unit 76 determines whether the drawing of all the strip areas 32 is completed. If it is not completed, the drawing control unit 76 returns to the drawing position shift amount calculation step (S108), and repeats the drawing position shift amount calculation step (S108) to the determination step (S172) for the next strip area 32. In this way, the drawing position shift amount calculation step (S108) to the determination step (S172) are repeated until the drawing of all the strip areas 32 is completed.

[0158] exist Fig.12 In the pre-processing mode shown, after the correction amount calculation step (S110) is performed for each strip area 32, the drawing control unit 76 determines whether the calculation of the correction amount is completed for all the strip areas 32 as a determination step (S112). If it is not completed, the drawing control unit 76 returns to the drawing position deviation amount calculation step (S108), and repeats the drawing position deviation amount calculation step (S108) to the determination step (S112) for the next strip area 32. In this way, the drawing position deviation amount calculation step (S108) to the determination step (S112) are repeated until the drawing of all the strip areas 32 is completed.

[0159] In the correction amount map creating step ( S114 ), the correction amount map creating unit 58 creates a correction amount map having the correction amount for each global mesh region 11 as an element value for the entire surface of the sample 101 .

[0160] As a drawing process (S170), the drawing mechanism 150 draws a pattern on the sample 101 using the multi-beam 20 (electron beam) based on the beam irradiation position corrected by the correction amount. The content of the drawing process (S170) is the same as that of the real-time mode. However, since the correction amount map of the entire area of ​​the sample 101 has been prepared, it is not necessary to calculate the correction amount while drawing. It is sufficient to draw each strip area 20 in sequence.

[0161] In the above example, a case where the deflection position (beam irradiation position) of the beam array is corrected by the correction amount is described, but the correction method is not limited to this.

[0162] In the variation of the first embodiment, the emission data generation unit 70 first corrects the formation position of the pattern on the depicted data based on the correction amount mapping. Specifically, the operation is performed as follows. The emission data generation unit 70 corrects the position of the pattern contained in each global grid area 11 with the correction amount defined in the global grid area 11.

[0163] Then, the emission data generation unit 70 uses the corrected pattern layout to re-create the dose map. The method of creating the dose map is the same as described above.

[0164] Then, the emission data generation section 70 calculates the irradiation time for each pixel 36. The irradiation time for each pixel 36 can be calculated by dividing the incident irradiation amount D(x) by the current density J for that pixel.

[0165] Then, the data processing unit 72 rearranges the obtained irradiation time data for each pixel 36 in the transmission order and stores it in the storage device 142. The transmission processing unit 74 transmits the irradiation time data to the deflection control circuit 130 in the transmission order.

[0166] Under the control of the drawing control unit 76, the drawing mechanism 150 draws a pattern on the sample 101 using the multi-beam 20 (electron beam) based on the beam irradiation position corrected by the correction amount. In the modified example of the first embodiment, in the real-time mode and the pre-processing mode, the position of the pattern on the pattern data has been position-corrected by the correction amount (dxn, dyn). Therefore, when drawing, under the control of the deflection control circuit 130, the deflector 208 deflects the beam array from the representative position of the beam array (for example, the center position or the position of the center beam) to the designed position in each tracking cycle. In the tracking cycle, at this position, while each beam draws (exposes) for example 4 pixels 36, the multi-beam 20 is deflected as a whole by the deflector 208, so that the beam array (irradiation area 34) follows the movement of the XY stage 105, so that the relative position of the beam array (irradiation area 34) and the sample 101 is not offset due to the movement of the XY stage 105.

[0167] In the above-mentioned first embodiment, a case where a drawing process is performed once on the sample 101 is described. In addition, the above-mentioned one drawing process means a process from the start of drawing to the completion of the drawing process of the entire drawing area (chip area) of the sample 101. Therefore, it includes multiple drawing that can be performed within such a process, for example, repeatedly performing drawing processing in a manner of multiple drawing of repeated parts while shifting the positions so that parts of the strip areas overlap each other in the y direction in strip units, or multiple drawing, for example, repeatedly drawing the same area drawn by the beams arranged at the front side with respect to the drawing direction in the multi-beam 20 in the one strip drawing of each strip area 20, using the beams arranged at the rear side with respect to the drawing direction. For example, in the case where the beam array draws the sample 101 in a manner of moving relatively to the right, the right half of the beam array is at the front side with respect to the drawing direction, and the left half is at the rear side with respect to the drawing direction.

[0168] As described above, according to the first embodiment, it is possible to correct the positional deviation of the beam irradiation position and the pattern formation position caused by the irreversible deformation of the sample 101 due to the irradiation of the multi-beam 20 (electron beam).

[0169] Implementation method 2.

[0170] In the second embodiment, a case is described in which, after the entire drawing process of the drawing region (chip region) of the sample 101 is completely completed, two-pass drawing is performed again to perform the drawing process of the entire drawing region (chip region) of the sample 101 using the same layout pattern.

[0171] Fig.18 This is a conceptual diagram showing the structure of the drawing device of Embodiment 2. Fig.18 In addition to the fact that the control computer 110 is further provided with a drawing time position deviation amount calculation unit 62, a correction amount calculation unit 64, and a correction amount map preparation unit 66, Figure 1 The same. Each "part" such as the dose map production part 50, the final position offset calculation part 52, the position offset calculation part 54 during drawing, the correction amount calculation part 56, the correction amount map production part 58, the position offset calculation part 62 during drawing, the correction amount calculation part 64, the correction amount map production part 66, the emission data generation part 70, the data processing part 72, the transmission processing part 74 and the drawing control part 76 has a processing circuit. Such a processing circuit includes, for example, an electrical circuit, a computer, a processor, a circuit substrate, a quantum circuit or a semiconductor device. Each "part" can use a common processing circuit (the same processing circuit), or can use different processing circuits (separate processing circuits). Information input and output to and information in operation with respect to the dose map creating unit 50, the final position shift amount calculating unit 52, the drawing position shift amount calculating unit 54, the correction amount calculating unit 56, the correction amount map creating unit 58, the drawing position shift amount calculating unit 62, the correction amount calculating unit 64, the correction amount map creating unit 66, the shot data generating unit 70, the data processing unit 72, the transmission processing unit 74, and the drawing control unit 76 is always stored in the memory 112. It is also possible to configure that one of the drawing position shift amount calculating unit 54 and the drawing position shift amount calculating unit 62 has both functions. In this case, the other can be omitted.

[0172] Fig.19 This is a diagram for explaining the two-pass drawing method of the second embodiment. Fig.19 In the first drawing process (first pass), the stripe-shaped area 32 on the lower side of the sample 101 is drawn sequentially toward the upper side (y direction). Fig.19The figure on the left side of shows the state of a certain position (indicated by ×) in the middle of the first drawing process. Then, after the first drawing process of the entire drawing area (chip area) of the sample 101 is completed, the sample 101 is directly placed on the workbench 105, and the second drawing process (second stroke) of repeatedly drawing using the drawing data of the same pattern layout is implemented. Fig.19 The figure on the right side of shows the state of drawing a certain position in the middle of the second drawing process (indicated by ×: the same position as the figure on the left side).

[0173] Fig. 20 This is a diagram showing an example of a state of positional deviation of the substrate surface in a comparative example of the second embodiment.

[0174] exist Fig. 20 , respectively show the state before the start of the first drawing process, the state when drawing at the desired position in the first drawing process, the state after the first drawing process is completed, the state when drawing at the desired position in the second drawing process, and the state after the second drawing process is completed.

[0175] exist Fig. 20 In the figure, the designed beam irradiation position is represented by vector A. By performing the first drawing process on the target LTEM substrate, the position of vector A is drawn in the first drawing process, as shown in FIG. Fig. 20 As shown in FIG. 1 , the position of vector A before the drawing process starts is physically moved to the position of vector B1 due to the deformation caused by the shrinkage of the substrate. Then, the drawing process is further performed. After the first drawing process is completed, as shown in FIG. Fig. 20 As shown, by further deformation, the position of vector A before the start of the drawing process is physically moved to the position of vector C1. Then, the second drawing process is started and the drawing process is performed. At the time when the position of vector A is drawn in the second drawing process, as shown in FIG. Fig. 20 As shown in FIG. 1 , the position of vector A before the drawing process starts is physically moved to the position of vector B2 due to the deformation caused by the shrinkage of the substrate. Then, the drawing process is further performed. After the second drawing process is completed (after the drawing process of the entire substrate is completed), as shown in FIG. Fig. 20 As shown, due to further deformation, the position of vector A before the start of the drawing process is physically moved to the position of vector C2.

[0176] Therefore, in the first drawing process, if the position of vector A before the drawing process is started is directly drawn, then after the drawing process of the entire substrate is completed, the drawn beam irradiation position is shifted from the position of vector A before the drawing process to the position of the vector indicated by (vector C2-vector B1) (vector A+(vector C2-vector B1)). Similarly, in the second drawing process, if the position of vector A before the drawing process is directly drawn, then after the drawing process of the entire substrate is completed, the drawn beam irradiation position is shifted from the position of vector A before the drawing process to the position of the vector indicated by (vector C2-vector B2) (vector A+(vector C2-vector B2)).

[0177] Therefore, in the second embodiment, even when such irreversible deformation occurs in the substrate, the irradiation position (patterning position) during drawing is corrected so that the beam irradiation position becomes the position of the vector A before the start of the drawing process after the drawing process is completed.

[0178] Fig.21 1 is a diagram showing an example of a state where the position of the substrate surface is shifted in Embodiment 2. The state where the substrate surface is deformed in Embodiment 2 is omitted. Fig.21 In the figure, the designed beam irradiation position is represented by vector A. By performing the first drawing process on the target LTEM substrate, the position of vector A is drawn in the first drawing process, as shown in FIG. Fig.21 As shown in FIG. 1 , the position of vector A before the drawing process starts is physically moved to the position of vector B1 due to the deformation caused by the shrinkage of the substrate. Then, after the first drawing process is completed and the second drawing process is completed, the drawing process of the entire substrate is completed. Fig.21 As shown, due to further deformation, the position of vector A before the start of the drawing process is physically moved to the position of vector C2.

[0179] Therefore, when drawing in the first drawing process, it is sufficient to correct the position offset (vector C2-vector B1) from the position (vector B1) at that moment to the position (vector C2) after the drawing process of the entire substrate is completed. Therefore, when drawing in the first drawing process, the position (vector A+(vector B1-vector C2)) corrected by the vector shown by (vector B1-vector C2) from the position of vector A before the start of the process is drawn as the beam irradiation position (or pattern formation position). Thus, after the drawing process of the entire substrate after the second drawing process is completed, the beam irradiation position (or pattern formation position) drawn by the first drawing process is formed at the position of vector A that is moved from the position (vector A+(vector B1-vector C2)) by the vector shown by (vector C2-vector B1).

[0180] Then, at the time of drawing the position of vector A in the second drawing process, as shown in FIG. Fig.21 As shown, the position of vector A before the drawing process starts is physically moved to the position of vector B2 due to the deformation caused by the shrinkage of the substrate. After the drawing process of the entire substrate is completed after the second drawing process, the position of vector A before the drawing process starts is physically moved to the position of vector C2 as described above.

[0181] Therefore, when drawing the second drawing process, it is sufficient to correct the position offset (vector C2-vector B2) from the position (vector B2) at that moment to the position (vector C2) after the drawing process of the entire substrate is completed. Therefore, when drawing the second drawing process, the position (vector A+(vector B2-vector C2)) corrected by the vector shown by (vector B2-vector C2) from the position of vector A before the start of the process is drawn as the beam irradiation position (or pattern formation position). Thus, after the drawing process of the entire substrate after the second drawing process is completed, the beam irradiation position (or pattern formation position) drawn by the second drawing process is formed at the position of vector A that is moved from the position (vector A+(vector B2-vector C2)) by the vector shown by (vector C2-vector B2).

[0182] According to the above, after the entire substrate is subjected to the drawing process, both the beam irradiation position drawn by the first drawing process and the beam irradiation position drawn by the second drawing process can be set to the position of the vector A before the drawing process starts.

[0183] Fig. 22 1 is a flowchart showing an example of the main steps of the drawing method according to Embodiment 2. Fig. 22 In the drawing method of the second embodiment, a series of steps are implemented, including a dose map preparation step (S101), a final position shift amount (vector C2) calculation step (S105), a drawing schedule preparation step (S107), a drawing position shift amount (vector B1) calculation step (S120), a correction amount calculation step (S122), a determination step (S124), a first correction amount map preparation step (S126), a drawing position shift amount (vector B2) calculation step (S130), a correction amount calculation step (S132), a determination step (S134), a second correction amount map preparation step (S136), a first drawing step (S174), and a second drawing step (S176). The drawing process of the second embodiment includes a first drawing process of drawing a first chip pattern, and a second drawing process of drawing a second chip pattern in a manner overlapping with the first chip pattern, which is performed after the first drawing process. In the second embodiment, the second chip pattern is made to be the same chip pattern as the first chip pattern.

[0184] exist Fig. 22 , a flowchart is shown for the case where the drawing process is performed in a pre-processing mode in which the drawing operation is started after the calculation process of correcting the beam irradiation position (or pattern formation position) of all regions is performed as pre-processing. The flowchart is omitted for the case where the drawing process is performed in a real-time mode in which the calculation process of correcting the beam irradiation position (or pattern formation position) of the next region is performed while the drawing operation is performed.

[0185] In the real-time mode, the drawing operation of the k-th strip area in the first drawing process and the correction calculation process of the k+m-th strip area are performed at the same time (the drawing position offset amount (vector B1) calculation process (S120), the correction amount calculation process (S122), the determination process (S124), and the first correction amount map preparation process (S126)). Then, the first drawing process (S174) is sequentially performed on the strip areas 32 for which the correction calculation process has been completed.

[0186] Similarly, the drawing operation of the k-th strip area and the correction calculation processing of the k+m-th strip area in the second drawing process are performed at the same time (the drawing position offset amount (vector B2) calculation process (S130), the correction amount calculation process (S132), the determination process (S134), and the second correction amount map preparation process (S136)). Then, the second drawing process (S176) is sequentially performed on the strip areas 32 that have completed the correction calculation process.

[0187] As a dose map preparation process (S101), the dose map preparation unit 50 prepares a dose map that defines a dose for each pixel. Here, a dose map for the first drawing process (first dose map) and a dose map for the second drawing process (second dose map) are prepared. Since the drawing process of the same layout pattern is performed in two passes, for example, the dose incident on each pixel is divided into half. In this case, generally, the first dose map and the second dose map become the same dose map. The method of preparing the dose map can also be the same as the content of the above-mentioned dose map preparation process (S102).

[0188] As a final position shift amount (vector C2) calculation step (S105), the final position shift amount calculation unit 52 calculates the final position shift amount (first position shift amount) of the pattern formation position or the beam irradiation position from the designed position due to the irreversible deformation of the sample 101 after the drawing is completed when the pattern is drawn using an electron beam on the sample 101 that is irreversibly deformed by the irradiation of the electron beam. Specifically, the final position shift amount calculation unit 52 calculates the position shift amount (vector C2) of each position after the first drawing process and the second drawing process are completed and the drawing process on the sample 101 is completed. In other words, the final position shift amount is the position shift amount from the designed position of the pattern due to the irreversible deformation of the sample 101 after the second drawing process is completed.

[0189] Then, the final position offset calculation unit 52 calculates the vector C2 of the representative point (e.g., the center position) in each global grid area 11 (position). Each vector C2 is calculated as a final position offset (dxfinal-i, dyfinal-i). i represents the index of each global grid area 11. The final position offset of the global grid area 11 including the pattern formation position or the beam irradiation position is equivalent to the final position offset of the pattern formation position or the beam irradiation position.

[0190] The final position shift amount (dxfinal-i, dyfinal-i) of each global mesh region 11 depends on the irradiation amount (irradiation coefficient) defined in the dose map, and can be calculated using, for example, the finite element method as described above.

[0191] As a drawing schedule preparation step (S107), the drawing control unit 76 prepares a drawing schedule that defines the shot order of each pixel defined in the dose map. Here, drawing schedules are prepared for the first drawing process and the second drawing process, respectively. Thus, for each shot, the position and irradiation amount before the shot (drawing) are known.

[0192] As a drawing position shift amount (vector B1) calculation step (S120), the drawing position shift amount calculation unit 54 calculates the drawing position shift amount (second position shift amount) from the designed position at the time of electron beam irradiation, which is caused by the irreversible deformation of the sample 101 caused by the electron beam irradiating the sample 101 before the irradiation time in the first drawing process. In other words, the drawing position shift amount calculation unit 54 calculates the drawing position shift amount (second position shift amount) of the pattern formation position or the beam irradiation position from the designed position at the time of electron beam irradiation of the object in the first drawing process, which is caused by the irreversible deformation of the sample 101 caused by the electron beam irradiating the sample 101 before the irradiation of the electron beam of the object in the first drawing process. Specifically, the drawing position shift amount calculation unit 54 calculates the drawing position shift amount (vector B1) of the representative position in each global grid area 11. The vector B1 of each global grid area 11 is calculated as the drawing position shift amount (dx1stwrite-n, dy1stwrite-n). n represents the index of each global grid area 11. The position offset amount when drawing the global grid area 11 including the formation position of the pattern or the beam irradiation position is equivalent to the position offset amount when drawing the formation position of the pattern or the beam irradiation position. The position offset amount when drawing each global grid area 11 (dx1stwrite-n, dy1stwrite-n) depends on the irradiation amount (irradiation coefficient) defined in the dose map, and as described above, it can be calculated in the same manner using, for example, the finite element method.

[0193] In the above example, the position offset during drawing is calculated for each global grid area 11, but the present invention is not limited thereto. The position offset during drawing may be calculated for each representative position of the beam array during actual transmission (for example, the center position or the position of the center beam).

[0194] As a correction amount calculation step (S122), the correction amount calculation unit 56 calculates a correction amount (vector B1-vector C2) (first correction amount) for correcting the pattern formation position or beam irradiation position when the sample 101 is irradiated with the electron beam (multi-beam 20) that is the object in the first drawing process, based on the final positional deviation amount caused by the irreversible deformation of the sample 101 after the drawing is completed. The correction amount (vector B1-vector C2) (first correction amount) is calculated based on the difference between the positional deviation amount (vector B1) at the time of drawing in the first drawing process and the positional deviation amount (vector C2) at the final time. In other words, the correction amount calculation unit 56 calculates the first correction amount in the first drawing process based on the difference between the positional deviation amount at the time of drawing in the first drawing process and the final positional deviation amount. In other words, the correction amount (dx1stn, dy1stn) of each position in the global grid area 11 of the nth beam irradiation (drawing) can be calculated by the position offset during drawing (dx1stwrite-n, dy1stwrite-n) minus the final position offset (dxfinal-n, dyfinal-n).

[0195] As a determination step (S124), the drawing control unit 76 determines whether the calculation of the correction amount for the first drawing process is completed for all the strip areas 32. If it is not completed, the drawing position deviation amount calculation step (S120) is returned to and the drawing position deviation amount calculation step (S120) to the determination step (S124) are repeated for the next strip area 32. In this way, the drawing position deviation amount calculation step (S120) to the determination step (S124) are repeated until the drawing of all the strip areas 32 is completed.

[0196] As a first correction amount map preparation step (S126), the correction amount map preparation unit 58 prepares a first correction amount map having as element values ​​the correction amount (dx1stn, dy1stn) for the first rendering process for each global grid area 11 (xn, yn) for the entire surface of the sample 101. The first correction amount map is stored in the storage device 142.

[0197] As a drawing position shift amount (vector B2) calculation step (S130), the drawing position shift amount calculation unit 62 calculates the drawing position shift amount (third position shift amount) from the designed position at the time of electron beam irradiation in the second drawing process, which is caused by the irreversible deformation of the sample 101 caused by the electron beam irradiating the sample 101 before the irradiation time. In other words, the drawing position shift amount calculation unit 62 calculates the drawing position shift amount (third position shift amount) of the pattern formation position or the beam irradiation position from the designed position at the time of irradiation of the electron beam in the second drawing process corresponding to the object in the first drawing process, which is caused by the irreversible deformation of the sample 101 caused by the electron beam irradiating the sample 101 before the irradiation of the electron beam in the second drawing process corresponding to the object in the first drawing process. Specifically, the drawing position shift amount calculation unit 62 calculates the drawing position shift amount (vector B2) of the representative position in each global grid area 11. The vector B2 of each global grid area 11 is calculated as the position offset during drawing (dx2ndwrite-n, dy2ndwrite-n). n represents the index of each global grid area 11. The position offset during drawing of the global grid area 11 including the formation position of the pattern or the beam irradiation position is equivalent to the position offset during drawing of the formation position of the pattern or the beam irradiation position. The position offset during drawing (dx2ndwrite-n, dy2ndwrite-n) of each global grid area 11 depends on the irradiation amount (irradiation coefficient) defined in the dose map, and as described above, it can be calculated in the same manner using, for example, the finite element method.

[0198] Furthermore, as described above, the positional offset amount during drawing may be calculated for each representative position of the beam array during actual transmission (for example, the center position or the position of the center beam).

[0199] As a correction amount calculation step (S132), the correction amount calculation unit 64 calculates a correction amount (vector B2-vector C2) (second correction amount) for correcting the pattern formation position or beam irradiation position when the sample 101 is irradiated with the electron beam (multi-beam 20) in the second drawing process corresponding to the electron beam of the object in the first drawing process, based on the final positional deviation amount caused by the irreversible deformation of the sample 101 after the drawing is completed. The correction amount (vector B2-vector C2) (second correction amount) is calculated based on the difference between the positional deviation amount (vector B2) at the time of drawing in the second drawing process and the positional deviation amount (vector C2) at the final time. In other words, the correction amount calculation unit 64 calculates the second correction amount in the second drawing process based on the difference between the positional deviation amount at the time of drawing in the second drawing process and the final positional deviation amount. In other words, the correction amount (dx2ndn, dy2ndn) of each position within the global grid area 11 of the nth beam irradiation (drawing) can be calculated by the position offset during drawing (dx2ndwrite-n, dy2ndwrite-n) minus the final position offset (dxfinal-n, dyfinal-n).

[0200] As a determination step (S134), the drawing control unit 76 determines whether the calculation of the correction amount for the second drawing process is completed for all the strip areas 32. If it is not completed, the drawing position deviation amount calculation step (S130) is returned to and the drawing position deviation amount calculation step (S130) to the determination step (S134) are repeated for the next strip area 32. In this way, the drawing position deviation amount calculation step (S130) to the determination step (S134) are repeated until the drawing of all the strip areas 32 for the second drawing process is completed.

[0201] As a second correction amount map preparation step (S136), the correction amount map preparation unit 66 prepares a second correction amount map having as element values ​​the correction amount (dx2ndn, dy2ndn) for the second rendering process for each global grid area 11 (xn, yn) for the entire surface of the sample 101. The second correction amount map is stored in the storage device 142.

[0202] As the first drawing process (S174), the emission data generating unit 70 calculates the incident irradiation amount D(x) (dose) for irradiating the pixel 36 for the first drawing process for each pixel 36. In other words, the incident irradiation amount D(x) (dose) is calculated by multiplying the irradiation amount defined in the dose map by the reference irradiation amount Dbase. When the incident irradiation amount D(x) (dose) is defined in the dose map, it can be used directly.

[0203] Next, the emission data generation unit 70 calculates the irradiation time for the first drawing process for each pixel 36. The irradiation time for each pixel 36 can be calculated by dividing the incident irradiation amount D(x) of the pixel by the current density J.

[0204] Then, the data processing unit 72 rearranges the obtained irradiation time data for each pixel 36 in the transmission order for the first drawing process, and stores it in the storage device 142. The transmission processing unit 74 transmits the irradiation time data to the deflection control circuit 130 in the transmission order.

[0205] Under the control of the drawing control unit 76, the drawing mechanism 150 draws a pattern on the sample 101 using the multi-beam 20 (electron beam) based on the beam irradiation position corrected by the correction amount (dx1stn, dy1stn). In other words, the drawing mechanism 150 performs the first correction in the first drawing process based on the difference between the positional deviation amount during drawing in the first drawing process and the final positional deviation amount. The drawing mechanism 150 draws while moving the XY stage 105. Specifically, under the control of the deflection control circuit 130 (an example of a correction unit), the deflector 208 deflects the beam array (irradiation area) to a position corrected by the correction amount (dx1stn, dy1stn) of the global grid area 11 including the representative position of the beam array (for example, the center position or the position of the center beam) in each tracking cycle of the multi-beam 20. The deflection position of the beam array (irradiation area 34) is set based on the representative position of the beam array (for example, the center position or the position of the center beam).

[0206] As the second drawing process (S176), the emission data generating unit 70 calculates the incident irradiation amount D(x) (dose) for irradiating the pixel 36 for the second drawing process for each pixel 36. In other words, the incident irradiation amount D(x) (dose) is calculated by multiplying the irradiation amount defined in the dose map by the reference irradiation amount Dbase. When the incident irradiation amount D(x) (dose) is defined in the dose map, it can be used directly.

[0207] Next, the emission data generating unit 70 calculates the irradiation time for the second drawing process for each pixel 36. The irradiation time for each pixel 36 can be calculated by dividing the incident irradiation amount D(x) of the pixel by the current density J.

[0208] Then, the data processing unit 72 rearranges the obtained irradiation time data for each pixel 36 in the transmission order for the second drawing process and stores it in the storage device 142. The transmission processing unit 74 transmits the irradiation time data to the deflection control circuit 130 in the transmission order.

[0209] Under the control of the drawing control unit 76, the drawing mechanism 150 draws a pattern on the sample 101 using the multi-beam 20 (electron beam) based on the beam irradiation position corrected by the correction amount (dx2ndn, dy2ndn). In other words, the drawing mechanism 150 performs the second correction in the second drawing process based on the difference between the positional deviation amount during drawing in the second drawing process and the final positional deviation amount. The drawing mechanism 150 draws while moving the XY stage 105. Specifically, under the control of the deflection control circuit 130 (an example of a correction unit), the deflector 208 deflects the beam array (irradiation area) to a position corrected by the correction amount (dx2ndn, dy2ndn) of the global grid area 11 including the representative position of the beam array (for example, the center position or the position of the center beam) in each tracking cycle of the multi-beam 20. The deflection position of the beam array (irradiation area 34) is set based on the representative position of the beam array (for example, the center position or the position of the center beam).

[0210] In the modification of the second embodiment, the formation position of the pattern may be corrected on the pattern data, similarly to the modification of the first embodiment.

[0211] In a variation of the second embodiment, as the first drawing process (S174), the emission data generation unit 70 first corrects the formation position of the pattern on the drawing data based on the first correction amount mapping using the correction amount (dx1stn, dy1stn) for the first drawing process of each global grid area (xn, yn) as an element value. Specifically, the operation is performed as follows. The emission data generation unit 70 corrects the position of the pattern contained in each global grid area 11 with the correction amount defined in the global grid area 11.

[0212] Then, the shot data generating unit 70 uses the corrected pattern layout to create a new dose map for the first drawing process. The method of creating the dose map is the same as described above.

[0213] Then, the emission data generation section 70 calculates the irradiation time for each pixel 36. The irradiation time for each pixel 36 can be calculated by dividing the incident irradiation amount D(x) by the current density J for that pixel.

[0214] Then, the data processing unit 72 rearranges the obtained irradiation time data for each pixel 36 in the transmission order and stores it in the storage device 142. The transmission processing unit 74 transmits the irradiation time data to the deflection control circuit 130 in the transmission order.

[0215] Under the control of the drawing control unit 76, the drawing mechanism 150 draws a pattern on the sample 101 using the multi-beam 20 (electron beam) based on the beam irradiation position corrected by the correction amount as the first drawing process. In the modification of the second embodiment, the position of the pattern on the pattern data is corrected by the correction amount (dx1stn, dy1stn) in both the real-time mode and the pre-processing mode. Therefore, when drawing, under the control of the deflection control circuit 130, the deflector 208 deflects the beam array from the representative position of the beam array (for example, the center position or the position of the center beam) to the designed position in each tracking cycle. In the tracking cycle, at this position, while each beam draws (exposes) for example 4 pixels 36, it is only necessary to deflect the multi-beam 20 as a whole through the deflector 208, so that the beam array (irradiation area 34) follows the movement of the XY worktable 105, so as to prevent the relative position of the beam array (irradiation area 34) and the sample 101 from being offset due to the movement of the XY worktable 105.

[0216] Similarly, as the second drawing process (S176), the emission data generation unit 70 first corrects the formation position of the pattern on the drawing data based on the second correction amount mapping with the correction amount (dx2ndn, dy2ndn) for the second drawing process of each global grid area (xn, yn) as the element value. Specifically, the operation is performed as follows. The emission data generation unit 70 corrects the position of the pattern contained in the global grid area 11 with the correction amount defined in the global grid area 11 for each global grid area 11.

[0217] Then, the shot data generating unit 70 uses the corrected pattern layout to create a new dose map for the first drawing process. The method of creating the dose map is the same as described above.

[0218] Then, the emission data generation section 70 calculates the irradiation time for each pixel 36. The irradiation time for each pixel 36 can be calculated by dividing the incident irradiation amount D(x) by the current density J for that pixel.

[0219] Then, the data processing unit 72 rearranges the obtained irradiation time data for each pixel 36 in the transmission order and stores it in the storage device 142. The transmission processing unit 74 transmits the irradiation time data to the deflection control circuit 130 in the transmission order.

[0220] Under the control of the drawing control unit 76, the drawing mechanism 150 draws a pattern on the sample 101 using the multi-beam 20 (electron beam) as the second drawing process based on the beam irradiation position corrected by the correction amount. In the modification of the second embodiment, in the real-time mode and the pre-processing mode, the position of the pattern on the pattern data has been corrected by the correction amount (dx2ndn, dy2ndn). Therefore, when drawing, under the control of the deflection control circuit 130, the deflector 208 deflects the beam array from the representative position of the beam array (for example, the center position or the position of the center beam) to the designed position in each tracking cycle. In the tracking cycle, at this position, while each beam draws (exposes) for example 4 pixels 36, it is only necessary to deflect the multi-beam 20 as a whole through the deflector 208, so that the beam array (irradiation area 34) follows the movement of the XY worktable 105, so as to prevent the relative position of the beam array (irradiation area 34) and the sample 101 from being offset due to the movement of the XY worktable 105.

[0221] As described above, according to the second embodiment, it is possible to correct the positional deviation of the beam irradiation position and the pattern formation position in two-pass drawing caused by the irreversible deformation of the sample 101 due to irradiation with the multi-beam 20 (electron beam).

[0222] Implementation method 3.

[0223] In the third embodiment, for the two-pass drawing described in the second embodiment, a case is described in which drawing is performed without correction in the first drawing process and the second drawing process is performed in accordance with the position drawn in the first drawing process.

[0224] The configuration of the drawing device 100 of the third embodiment is the same as that of the first embodiment except that the final position deviation amount calculation unit 52, the correction amount calculation unit 56, and the correction amount map preparation unit 58 are omitted. Fig.18 same.

[0225] Fig.23 This is a diagram showing an example of a state of positional displacement of the substrate surface in the third embodiment.

[0226] exist Fig.23 , respectively show the state before the start of the first drawing process, the state when drawing at a desired position in the first drawing process, the state after the first drawing process is completed, the state when drawing at a desired position in the second drawing process, and the state after the second drawing process is completed.

[0227] exist Fig.23In the figure, the designed beam irradiation position is represented by vector A. For the LTEM substrate of interest, if the position of vector A before the start of the drawing process is drawn directly without correction in the first drawing process, the position of vector A in the second drawing process will be drawn at the same time as Fig.23 As shown, the position of vector A before the start of the drawing process is physically moved to the position of the vector (vector A+(vector B2-vector B1)) shown by (vector B2-vector B1) from the position of vector A before the start of the drawing process due to the deformation caused by the shrinkage of the substrate.

[0228] In the third embodiment, since the second drawing process is performed using the same layout pattern as that of the first drawing process, the beam irradiation position in the first drawing process is also overlapped and drawn in the second drawing process.

[0229] Therefore, when drawing in the second drawing process, the position after the vector correction shown by (vector B2-vector B1) from the position of vector A before the start of the process (vector A+(vector B2-vector B1)) is drawn as the beam irradiation position (or pattern formation position). Therefore, after the drawing process of the entire substrate after the second drawing process is completed, the beam irradiation position (or pattern formation position) drawn by the first drawing process and the beam irradiation position (or pattern formation position) drawn by the second drawing process are different from the position of vector A before the start of the process, but can be formed at the same position.

[0230] A flowchart showing an example of the main process of the drawing method of Embodiment 3 and a flowchart omitting Fig. 22 The contents of the final position deviation amount (vector C2) calculation step (S105), the correction amount calculation step (S122), the determination step (S124), and the first correction amount map creation step (S126) in each step are the same. In the third embodiment, no correction is performed in the first drawing process, and therefore, no correction amount calculation is performed in the first drawing process.

[0231] The contents of the dose map preparation step (S103), the drawing schedule preparation step (S107), and the drawing position deviation amount (vector B1) calculation step (S120) of the third embodiment are similar to those of the present invention. Fig. 22 The contents are the same as those described in the dose map creation step (S103), the drawing schedule creation step (S107), and the drawing position offset amount (vector B1) calculation step (S120).

[0232] In other words, in the drawing position shift amount (vector B1) calculation step (S120), the drawing position shift amount calculation unit 54 calculates the position shift amount of the pattern formation position or the beam irradiation position from the designed position when the object is irradiated with the electron beam, which is caused by the irreversible deformation of the sample 101 caused by the electron beam irradiated to the sample 101 before the irradiation of the electron beam of the object to the pattern formation position or the beam irradiation position in the first drawing process (another example of the first position shift amount). Specifically, the drawing position shift amount calculation unit 54 calculates the drawing position shift amount (vector B1) of the representative position in each global grid area 11. The vector B1 of each global grid area 11 is calculated as the drawing position shift amount (dx1stwrite-n, dy1stwrite-n). n represents the index of each global grid area 11. The position offset amount of the global grid area 11 including the pattern formation position or the beam irradiation position is equivalent to the position offset amount of the pattern formation position or the beam irradiation position. The position offset amount (dx1stwrite-n, dy1stwrite-n) of each global grid area 11 during drawing depends on the irradiation amount (irradiation coefficient) defined in the dose map, and can be calculated in the same manner as described above, for example, using the finite element method.

[0233] In the above example, the position offset during drawing is calculated for each global grid area 11, but the present invention is not limited thereto. The position offset during drawing may be calculated for each representative position of the beam array during actual transmission (for example, the center position or the position of the center beam).

[0234] The content of the drawing position deviation amount (vector B2) calculation step (S130) of the third embodiment is the same as Fig. 22 The contents are the same as those described in the drawing position offset amount (vector B2) calculation step (S130).

[0235] As a correction amount calculation step (S132), the correction amount calculation unit 64 calculates a correction amount (vector B2-vector B1) (another example of the first correction amount) for correcting the pattern formation position or beam irradiation position when irradiating the electron beam in the second drawing process corresponding to the electron beam of the object in the first drawing process, based on the position offset (vector B1). The correction amount (vector B2-vector B1) (another example of the first correction amount) is calculated based on the difference between the position offset (vector B2) during drawing in the second drawing process and the position offset (vector B1) during drawing in the first drawing process. In other words, the correction amount (dx2ndn, dy2ndn) of each position in the global grid area 11 of the nth beam irradiation (drawing) can be calculated by the position offset (dx2ndwrite-n, dy2ndwrite-n) during drawing-the position offset (dx1stwrite-n, dy1stwrite-n) during drawing.

[0236] The contents of the determination step (S134) and the second correction amount map preparation step (S136) of the third embodiment are similar to those of the embodiment of the present invention. Fig. 22 The contents are the same as those described in the determination step (S134) and the second correction amount map preparation step (S136).

[0237] In the first drawing process (S174), the emission data generator 70 uses the dose map used for the first drawing process to calculate the irradiation time for each pixel 36. The irradiation time for each pixel 36 can be calculated by dividing the incident irradiation amount D(x) of the pixel by the current density J.

[0238] Then, the data processing unit 72 rearranges the obtained irradiation time data for each pixel 36 in the transmission order and stores it in the storage device 142. The transmission processing unit 74 transmits the irradiation time data to the deflection control circuit 130 in the transmission order.

[0239] Under the control of the drawing control unit 76, the drawing mechanism 150 draws a pattern on the sample 101 using the multi-beam 20 (electron beam) as the first drawing process. In the third embodiment, in the real-time mode and the pre-processing mode, when drawing is performed, under the control of the deflection control circuit 130, the deflector 208 deflects the beam array from a representative position (e.g., the center position or the position of the center beam) of the beam array to a designed position in each tracking cycle. In the tracking cycle, at this position, while each beam draws (exposes) four pixels 36, for example, at this position, the multi-beam 20 is deflected as a whole by the deflector 208, so that the beam array (irradiation area 34) follows the movement of the XY stage 105, so that the relative position of the beam array (irradiation area 34) and the sample 101 is not shifted due to the movement of the XY stage 105.

[0240] In the second drawing process (S176), the emission data generating unit 70 calculates the incident irradiation amount D(x) (dose) for irradiating the pixel 36 for the second drawing process for each pixel 36. In other words, the incident irradiation amount D(x) (dose) is calculated by multiplying the irradiation amount defined in the dose map by the reference irradiation amount Dbase. When the incident irradiation amount D(x) (dose) is defined in the dose map, it can be used directly.

[0241] Next, the emission data generation unit 70 calculates the irradiation time for the second drawing process for each pixel 36. The irradiation time for each pixel 36 can be calculated by dividing the incident irradiation amount D(x) of the pixel by the current density J.

[0242] Then, the data processing unit 72 rearranges the obtained irradiation time data for each pixel 36 in the transmission order for the second drawing process and stores it in the storage device 142. The transmission processing unit 74 transmits the irradiation time data to the deflection control circuit 130 in the transmission order.

[0243] Under the control of the drawing control unit 76, the drawing mechanism 150 draws a pattern on the sample 101 using the multi-beam 20 (electron beam) based on the beam irradiation position corrected by the correction amount (dx2ndn, dy2ndn). The drawing mechanism 150 draws while moving the XY stage 105. Specifically, under the control of the deflection control circuit 130 (an example of a correction unit), the deflector 208 deflects the beam array (irradiation area) to a position corrected by the correction amount (dx2ndn, dy2ndn) of the global grid area 11 including the representative position of the beam array (for example, the center position or the position of the center beam) in each tracking cycle of the multi-beam 20. The deflection position of the beam array (irradiation area 34) is set based on the representative position of the beam array (for example, the center position or the position of the center beam).

[0244] In the modification of the third embodiment, similarly to the modification of the second embodiment, the formation position of the pattern may be corrected on the pattern data.

[0245] The content of the first drawing step ( S174 ) of the modification of the third embodiment is the same as the first drawing step ( S174 ) of the third embodiment.

[0246] In the second drawing process (S176) of the variation of the third embodiment, the emission data generation unit 70 first corrects the formation position of the pattern on the drawing data based on the correction amount mapping with the correction amount (dx2ndn, dy2ndn) for the second drawing process of each global grid area (xn, yn) as the element value. Specifically, the operation is performed as follows. The emission data generation unit 70 corrects the position of the pattern contained in each global grid area 11 with the correction amount defined in the global grid area 11.

[0247] Then, the shot data generating unit 70 uses the corrected pattern layout to create a new dose map for the first drawing process. The method of creating the dose map is the same as described above.

[0248] Then, the emission data generation section 70 calculates the irradiation time for each pixel 36. The irradiation time for each pixel 36 can be calculated by dividing the incident irradiation amount D(x) by the current density J for that pixel.

[0249] Then, the data processing unit 72 rearranges the obtained irradiation time data for each pixel 36 in the transmission order and stores it in the storage device 142. The transmission processing unit 74 transmits the irradiation time data to the deflection control circuit 130 in the transmission order.

[0250] Under the control of the drawing control unit 76, the drawing mechanism 150 draws a pattern on the sample 101 using the multi-beam 20 (electron beam) as the second drawing process based on the beam irradiation position corrected by the correction amount. In the modification of the third embodiment, in the real-time mode and the pre-processing mode, the position of the pattern on the pattern data has been corrected by the correction amount (dx2ndn, dy2ndn). Therefore, when drawing, under the control of the deflection control circuit 130, the deflector 208 deflects the beam array from the representative position of the beam array (for example, the center position or the position of the center beam) to the designed position in each tracking cycle. In the tracking cycle, at this position, while each beam draws (exposes) for example 4 pixels 36, it is only necessary to deflect the multi-beam 20 as a whole through the deflector 208, so that the beam array (irradiation area 34) follows the movement of the XY worktable 105, so as to prevent the relative position of the beam array (irradiation area 34) and the sample 101 from being offset due to the movement of the XY worktable 105.

[0251] As described above, according to embodiment 3, even when the positional offset of the beam irradiation position and the pattern formation position in the first stroke of the two-stroke drawing is not corrected, the positional offset of the beam irradiation position and the pattern formation position caused by the irreversible deformation of the sample 101 caused by the irradiation of the multi-beam 20 (electron beam) can be corrected in the second stroke.

[0252] Implementation method 4.

[0253] In embodiment 4, the following situation is described: after the first drawing process of the entire drawing area (chip area) of sample 101 is completed, sample 101 is moved out, and after development, etching, and anti-corrosion agent coating, etc., sample 101 is placed on the workbench 105 again, and the second drawing process of the entire drawing area (chip area) of sample 101 is performed with a different layout pattern, and overlapping drawing is performed.

[0254] Fig.24 This is a conceptual diagram showing the structure of a drawing device according to Embodiment 4. Fig.24 The present invention is similar to the present invention except that a mark shift amount calculation unit 67, a GMC (grid matching correction) correction unit 68, and a mark position correction unit 69 are additionally arranged in the control computer 110, a detection circuit 137 is additionally arranged, and a detector 212 is further arranged in the electron lens barrel 102. Fig.18 same.

[0255] Each of the “parts” such as the dose map preparation part 50, the final position shift amount calculation part 52, the position shift amount calculation part 54 during drawing, the correction amount calculation part 56, the correction amount map preparation part 58, the position shift amount calculation part 62 during drawing, the correction amount calculation part 64, the correction amount map preparation part 66, the mark shift amount calculation part 67, the GMC correction part 68, the mark position correction part 69, the emission data generation part 70, the data processing part 72, the transmission processing part 74 and the drawing control part 76 has a processing circuit. Such a processing circuit includes, for example, an electrical circuit, a computer, a processor, a circuit substrate, a quantum circuit or a semiconductor device. Each of the “parts” may use a common processing circuit (the same processing circuit) or may use different processing circuits (separate processing circuits). Information input and output to and information in operation with respect to the dose map creating unit 50, the final position shift amount calculating unit 52, the drawing position shift amount calculating unit 54, the correction amount calculating unit 56, the correction amount map creating unit 58, the drawing position shift amount calculating unit 62, the correction amount calculating unit 64, the correction amount map creating unit 66, the marker shift amount calculating unit 67, the GMC correcting unit 68, the marker position correcting unit 69, the shot data generating unit 70, the data processing unit 72, the transmission processing unit 74, and the drawing control unit 76 is always stored in the memory 112. It is the same as the second embodiment that one of the drawing position shift amount calculating unit 54 and the drawing position shift amount calculating unit 62 has both functions. In this case, the other can be omitted.

[0256] In the first rendering process, Fig.19 Similarly, the drawing is performed sequentially from the strip area 32 on the lower side of the sample 101 toward the upper side (y direction). Then, after the first drawing process of the entire drawing area (chip area) of the sample 101 is completed, the sample 101 is removed from the drawing device 100, and after development, etching, and resist coating, etc., it is placed on the workbench 105 again, as shown in FIG. Fig.19 As shown in the figure on the right side of , a second drawing process is performed by overlapping and drawing on the already drawn pattern layout using drawing data of another pattern layout. Fig.19 The figure on the right side of shows the state of drawing a certain position (indicated by ×: a position paired with the position indicated by × in the figure on the left side) in the middle of the second drawing process.

[0257] Fig.25 This is a diagram showing an example of a state of positional deviation of the substrate surface in a comparative example of the fourth embodiment.

[0258] exist Fig.25, respectively show the state before the start of the first drawing process, the state when drawing at a desired position in the first drawing process, the state after the first drawing process is completed, the state when drawing at a desired position in the second drawing process, and the state after the second drawing process is completed.

[0259] exist Fig.25 In FIG. 1 , the designed beam irradiation position in the first drawing process is represented by vector A11. The designed beam irradiation position in the second drawing process is represented by vector A21. By performing the first drawing process on the target LTEM substrate, at the time when the position of vector A11 is drawn in the first drawing process, as shown in FIG. Fig.25 As shown in FIG. 1 , the position of the vector A11 before the drawing process starts is physically moved to the position of the vector B11 by the deformation caused by the shrinkage of the substrate. Fig.25 As shown, the position of the vector A21 before the start of the drawing process is physically moved to the position of the vector B21 by deformation due to the contraction of the substrate.

[0260] Then, further drawing processing is performed. After the first drawing processing is completed, Fig.25 As shown, due to further deformation, the position of the vector A11 before the start of the drawing process is physically moved to the position of the vector C11. Similarly, the position of the vector A21 before the start of the drawing process is physically moved to the position of the vector C21.

[0261] Then, the second drawing process is started and the drawing process is performed. At the time when the position of the vector A21 is drawn in the second drawing process, as shown in FIG. Fig.25 As shown, the position of vector A11 before the start of the drawing process is physically moved to the position of vector B12 by deformation due to the shrinkage of the substrate. Similarly, the position of vector A21 before the start of the drawing process is physically moved to the position of vector B22.

[0262] Then, the drawing process is further performed. After the second drawing process is completed (after the drawing process of the entire substrate is completed), as shown in FIG. Fig.25 As shown, due to further deformation, the position of the vector A11 before the start of the drawing process is physically moved to the position of the vector C12. Similarly, the position of the vector A21 before the start of the drawing process is physically moved to the position of the vector C22.

[0263] Therefore, in the first drawing process, if the position of vector A11 before the drawing process is started is directly drawn, then after the drawing process of the entire substrate is completed, the drawn beam irradiation position is shifted from the position of vector A11 before the drawing process is started by the position of the vector indicated by (vector C12-vector B11) (vector A+(vector C12-vector B11)). Similarly, in the second drawing process, if the position of vector A21 before the drawing process is started is directly drawn, then after the drawing process of the entire substrate is completed, the drawn beam irradiation position is shifted from the position of vector A21 before the drawing process is started by the position of the vector indicated by (vector C12-vector B12) (vector A21+(vector C12-vector B12)).

[0264] Therefore, in embodiment 4, even when such irreversible deformation occurs in the substrate, the irradiation position (pattern forming position) during drawing is corrected so that after the drawing process is completed, the beam irradiation position of the first drawing process becomes the position of vector A11 before the start of the drawing process, and the beam irradiation position of the second drawing process becomes the position of vector A21 before the start of the drawing process.

[0265] Fig.26 1 is a diagram showing an example of a state where the position of the substrate surface is shifted in Embodiment 4. The state where the substrate surface is deformed in Embodiment 4 is omitted. Fig.26 In FIG. 1 , the designed beam irradiation position in the first drawing process is represented by a vector A11 , and the designed beam irradiation position in the second drawing process is represented by a vector A21 .

[0266] By performing the first drawing process on the target LTEM substrate, at the time when the position of the drawing vector A11 is drawn in the first drawing process, as shown in FIG. Fig.26 As shown in FIG. 1 , the position of the vector A11 before the drawing process starts is physically moved to the position of the vector B11 by the deformation caused by the shrinkage of the substrate. Fig.26 As shown, the position of the vector A21 before the start of the drawing process is physically moved to the position of the vector B21 by deformation due to the contraction of the substrate.

[0267] Then, after the first drawing process is completed and the second drawing process is completed, the drawing process of the entire substrate is completed. Fig.26 As shown, due to further deformation, the position of the vector A11 before the start of the drawing process is physically moved to the position of the vector C12. Similarly, the position of the vector A21 before the start of the drawing process is physically moved to the position of the vector C22.

[0268] Therefore, when drawing in the first drawing process, it is sufficient to correct the position offset (vector C12-vector B11) from the position (vector B11) at that moment to the position (vector C12) after the drawing process of the entire substrate is completed. Therefore, when drawing in the first drawing process, the position (vector A11+(vector B11-vector C12)) corrected by the vector shown by (vector B11-vector C12) from the position of vector A11 before the start of the process is drawn as the beam irradiation position (or pattern formation position). Thus, after the drawing process of the entire substrate after the second drawing process is completed, the beam irradiation position (or pattern formation position) drawn by the first drawing process is formed at the position of vector A11 that is moved from the position (vector A11+(vector B11-vector C12)) by the vector shown by (vector C12-vector B11).

[0269] Then, at the time of drawing the position of the vector A21 in the second drawing process, as shown in FIG. Fig.26 As shown, the position of vector A21 before the start of the drawing process is physically moved to the position of vector B22 due to the deformation caused by the shrinkage of the substrate. This is the same as the positional offset (vector B12-vector A11) from the position of vector A11 before the start of the process to the position of vector B12.

[0270] After the second drawing process is completed for the entire substrate, the position of vector A21 before the drawing process is physically moved to the position of vector C22 as described above. This is the same as the positional offset (vector C12-vector A11) from the position of vector A11 before the process is started to the position of vector C12.

[0271] Therefore, when drawing in the second drawing process, it is sufficient to correct the position offset (vector C22-vector B22) from the position (vector B22) at that moment to the position (vector C22) after the drawing process of the entire substrate is completed. This is the same as the position offset (vector C12-vector B12) from the position (vector B12) to the position (vector C12) after the drawing process of the entire substrate is completed. Therefore, when drawing in the second drawing process, the position (vector A21+(vector B12-vector C12)) corrected by the vector shown by (vector B12-vector C12) from the position of vector A21 before the start of the process is drawn as the beam irradiation position (or pattern formation position). Thus, after the drawing process of the entire substrate after the second drawing process is completed, the beam irradiation position (or pattern formation position) drawn by the second drawing process is formed at the position of vector A21 that is moved from the position (vector A21+(vector B12-vector C12)) by the vector shown by (vector C12-vector B12).

[0272] As described above, the beam irradiation position drawn by the first drawing process and the beam irradiation position drawn by the second drawing process are both formed at the positions of the vectors A11 and A21 before the drawing process starts after the drawing process of the entire substrate is completed. Therefore, the relative positional relationship between the two can be maintained.

[0273] Fig. 27 This is a flowchart showing a part of an example of the main process of the drawing method of embodiment 4.

[0274] Fig.28 This is a flowchart showing the remaining part of an example of the main process steps of the drawing method of embodiment 4.

[0275] exist Fig. 27 as well as Fig.28 In the drawing method of the fourth embodiment, a dose map preparation step (S101), a final position offset (vector C2) calculation step (S103), a drawing schedule preparation step (S107), a drawing position offset (vector B11) calculation step (S121), a correction amount calculation step (S123), a determination step (S124), a first correction amount map preparation step (S127), a drawing position offset (vector B12) calculation step (S131), a correction amount calculation step (S133), The process includes a determination process (S134), a second correction amount map preparation process (S137), a first mark measurement process (S180), a first GMC correction process (S182), a first drawing process (S184), a development / etching / resist coating process (S186), a mark offset calculation process (S188), a second mark measurement process (S190), a mark position correction process (S192), a second GMC correction process (S194), and a second drawing process (S196). The drawing process of the fourth embodiment includes a first drawing process of drawing a first chip pattern, and a second drawing process of drawing a second chip pattern in a manner overlapping with the first chip pattern after the first drawing process. The second chip pattern of the fourth embodiment is different from the first chip pattern.

[0276] exist Fig. 27 as well as Fig.28 , a flowchart is shown for the case where the drawing process is performed in a pre-processing mode in which the calculation process of correcting the beam irradiation position (or pattern formation position) of all regions is performed as pre-processing and then the drawing operation is started. The flowchart for the case where the drawing process is performed in a real-time mode in which the calculation process of correcting the beam irradiation position (or pattern formation position) of the next region is performed while the drawing operation is performed is omitted.

[0277] In the real-time mode, after the first mark measurement step (S180) and the first GMC correction step (S182) are performed, the drawing operation of the k-th strip area in the first drawing process and the correction calculation process of the k+m-th strip area (the drawing position offset (vector B11) calculation step (S121), the correction amount calculation step (S123), the determination step (S124), and the first correction amount map preparation step (S127)) are performed at the same time. Then, the first drawing step (S194) is sequentially performed for the strip area 32 that has completed the correction calculation process.

[0278] After that, after the development / etching / resist coating step (S186), the mark shift amount calculation step (S188), the second mark measurement step (S190), the mark position correction step (S192), and the second GMC correction step (S194) are performed, the drawing operation of the k-th strip area and the correction calculation process of the k+m-th strip area in the second drawing process are performed at the same time (the drawing position shift amount (vector B12) calculation step (S131), the correction amount calculation step (S133), the determination step (S134), and the second correction amount map preparation step (S136)). Then, the second drawing process (S196) is sequentially performed on the strip area 32 that has completed the correction calculation process.

[0279] As a dose map preparation step (S101), the dose map preparation unit 50 prepares a dose map that defines a dose for each pixel. Here, a dose map for the first drawing process (first dose map) and a dose map for the second drawing process (second dose map) are prepared. The method of preparing the dose map may be the same as the content of the above-mentioned dose map preparation step (S102).

[0280] As a final position shift amount (vector C12) calculation step (S103), the final position shift amount calculation unit 52 calculates the final position shift amount (first position shift amount) of the pattern formation position or the beam irradiation position from the designed position caused by the irreversible deformation of the sample 101 after the drawing is completed when the electron beam is used to draw a pattern on the sample 101 that is irreversibly deformed by the irradiation of the electron beam. Specifically, the final position shift amount calculation unit 52 calculates the position shift amount (vector C12) of each position after the first drawing process and the second drawing process are completed and the drawing process on the sample 101 is completed.

[0281] Then, the final position offset calculation unit 52 calculates the vector C12 of the representative point (e.g., the center position) in each global grid area 11 (position). Each vector C12 is calculated as a final position offset (dxfinal-i, dyfinal-i). i represents the index of each global grid area 11. The final position offset of the global grid area 11 including the pattern formation position or the beam irradiation position is equivalent to the final position offset of the pattern formation position or the beam irradiation position.

[0282] The final position shift amount (dxfinal-i, dyfinal-i) of each global mesh region 11 depends on the irradiation amount (irradiation coefficient) defined in the dose map, and can be calculated using, for example, the finite element method as described above.

[0283] As a drawing schedule preparation step (S107), the drawing control unit 76 prepares a drawing schedule that defines the shot order of each pixel defined in the dose map. Here, drawing schedules are prepared for the first drawing process and the second drawing process, respectively. Thus, for each shot, the position and irradiation amount before the shot (drawing) are known.

[0284] As a drawing position shift amount (vector B11) calculation step (S121), the drawing position shift amount calculation unit 54 calculates the drawing position shift amount (second position shift amount) from the designed position at the time of electron beam irradiation, which is caused by the irreversible deformation of the sample 101 caused by the electron beam irradiating the sample 101 before the irradiation time in the first drawing process. In other words, the drawing position shift amount calculation unit 54 calculates the drawing position shift amount (second position shift amount) of the pattern formation position or beam irradiation position from the designed position at the time of electron beam irradiation of the object, which is caused by the irreversible deformation of the sample 101 caused by the electron beam irradiating the sample 101 before the irradiation of the electron beam to the pattern formation position or beam irradiation position in the first drawing process. Specifically, the drawing position shift amount calculation unit 54 calculates the drawing position shift amount (vector B11) of the representative position in each global grid area 11. The vector B11 of each global grid area 11 is calculated as the position offset during drawing (dx1stwrite-n, dy1stwrite-n). n represents the index of each global grid area 11. The position offset during drawing of the global grid area 11 including the formation position of the pattern or the beam irradiation position is equivalent to the position offset during drawing of the formation position of the pattern or the beam irradiation position. The position offset during drawing (dx1stwrite-n, dy1stwrite-n) of each global grid area 11 depends on the irradiation amount (irradiation coefficient) defined in the dose map, and as described above, it can be calculated in the same manner using, for example, the finite element method.

[0285] In the above example, the position offset during drawing is calculated for each global grid area 11, but the present invention is not limited thereto. The position offset during drawing may be calculated for each representative position of the beam array during actual transmission (for example, the center position or the position of the center beam).

[0286] As a correction amount calculation step (S123), the correction amount calculation unit 56 calculates a correction amount (vector B11-vector C12) (first correction amount) for correcting the pattern formation position or beam irradiation position when the sample 101 is irradiated with the target electron beam (multi-beam 20) based on the final positional deviation amount caused by the irreversible deformation of the sample 101 after the drawing is completed. The correction amount (vector B11-vector C12) (first correction amount) is calculated based on the difference between the positional deviation amount (vector B11) at the time of drawing in the first drawing process and the positional deviation amount (vector C12) at the final time. In other words, the correction amount calculation unit 56 calculates the first correction amount in the first drawing process based on the difference between the positional deviation amount at the time of drawing in the first drawing process and the final positional deviation amount. In other words, the correction amount (dx1stn, dy1stn) of each position in the global grid area 11 of the nth beam irradiation (drawing) can be calculated by the position offset during drawing (dx1stwrite-n, dy1stwrite-n) minus the final position offset (dxfinal-n, dyfinal-n).

[0287] As a determination step (S124), the drawing control unit 76 determines whether the calculation of the correction amount for the first drawing process is completed for all the strip areas 32. If it is not completed, the drawing position deviation amount calculation step (S121) is returned to and the drawing position deviation amount calculation step (S121) to the determination step (S124) are repeated for the next strip area 32. In this way, the drawing position deviation amount calculation step (S120) to the determination step (S124) are repeated until the drawing of all the strip areas 32 is completed.

[0288] As a first correction amount map preparation step (S127), the correction amount map preparation unit 58 prepares a first correction amount map having as element values ​​the correction amount (dx1stn, dy1stn) for the first rendering process for each global grid area (xn, yn) for the entire surface of the sample 101. The first correction amount map is stored in the storage device 142.

[0289] As a drawing position shift amount (vector B12) calculation step (S131), the drawing position shift amount calculation unit 62 calculates the drawing position shift amount (third position shift amount) from the designed position at the time of electron beam irradiation in the second drawing process, which is caused by the irreversible deformation of the sample 101 caused by the electron beam irradiating the sample 101 before the irradiation time. In other words, the drawing position shift amount calculation unit 62 calculates the drawing position shift amount (third position shift amount) of the pattern formation position or the beam irradiation position from the designed position at the time of irradiation of the electron beam in the second drawing process corresponding to the object in the first drawing process, which is caused by the irreversible deformation of the sample 101 caused by the electron beam irradiating the sample 101 before the irradiation of the electron beam in the second drawing process corresponding to (paired with) the object in the first drawing process. Specifically, the drawing position shift amount calculation unit 62 calculates the drawing position shift amount (vector B12) of the representative position in each global grid area 11. The vector B12 of each global grid area 11 is calculated as the position offset during drawing (dx2ndwrite-n, dy2ndwrite-n). n represents the index of each global grid area 11. The position offset during drawing of the global grid area 11 including the formation position of the pattern or the beam irradiation position is equivalent to the position offset during drawing of the formation position of the pattern or the beam irradiation position. The position offset during drawing (dx2ndwrite-n, dy2ndwrite-n) of each global grid area 11 depends on the irradiation amount (irradiation coefficient) defined in the dose map, and as described above, it can be calculated in the same manner using, for example, the finite element method.

[0290] Furthermore, as described above, the positional offset amount during drawing may be calculated for each representative position of the beam array during actual transmission (for example, the center position or the position of the center beam).

[0291] As a correction amount calculation step (S133), the correction amount calculation unit 64 calculates a correction amount (vector B12-vector C12) (second correction amount) for correcting the pattern formation position or beam irradiation position when the sample 101 is irradiated with an electron beam (multi-beam 20) in the second drawing process corresponding to (paired with) the electron beam of the object in the first drawing process, based on the final positional deviation amount caused by the irreversible deformation of the sample 101 after the drawing is completed. The correction amount (vector B12-vector C12) (second correction amount) is calculated based on the difference between the positional deviation amount (vector B12) at the time of drawing in the second drawing process and the positional deviation amount (vector C12) at the final time. In other words, the correction amount calculation unit 64 calculates the second correction amount in the second drawing process based on the difference between the positional deviation amount at the time of drawing in the second drawing process and the final positional deviation amount. In other words, the correction amount (dx2ndn, dy2ndn) of each position within the global grid area 11 of the nth beam irradiation (drawing) can be calculated by the position offset during drawing (dx2ndwrite-n, dy2ndwrite-n) minus the final position offset (dxfinal-n, dyfinal-n).

[0292] As a determination step (S134), the drawing control unit 76 determines whether the calculation of the correction amount for the second drawing process is completed for all the strip areas 32. If it is not completed, the drawing position shift amount calculation step (S131) ​​is returned to and the drawing position shift amount calculation step (S131) ​​to the determination step (S134) are repeated for the next strip area 32. In this way, the drawing position shift amount calculation step (S131) ​​to the determination step (S134) are repeated until the drawing of all the strip areas 32 for the second drawing process is completed.

[0293] As a second correction amount map preparation step (S137), the correction amount map preparation unit 66 prepares a second correction amount map having as element values ​​the correction amount (dx2ndn, dy2ndn) for the second rendering process for each global grid area (xn, yn) for the entire surface of the sample 101. The second correction amount map is stored in the storage device 142.

[0294] As a first mark measuring step (S180), the mark position (first mark position) of the alignment mark 14 is measured before the first drawing process. Specifically, when the sample 101 is carried into the drawing device 100 and placed on the workbench 105, the mark positions of the alignment marks 14 formed on the sample 101, for example, at the four corners, are measured.

[0295] Fig.29 FIG. 1 is a diagram showing an example of a sample surface on which an alignment mark is formed according to Embodiment 4. Fig.29In the present invention, an alignment mark 14 for alignment is formed in advance on the sample 101. For example, a plurality of alignment marks 14 are formed. As each alignment mark 14, Fig.29 As shown, for example, a cross pattern is preferably formed. Fig.29 In the example of , there is a chip area for forming a pattern in the central part of the sample 101 surface. In addition, alignment marks 14 are formed on the sample 101 surface, for example, at the four corners. Under the control of the drawing control unit 76, the drawing mechanism 150 scans each alignment mark 14 with an electron beam, and the detector 212 detects the secondary electrons emitted from the sample 101 surface including the alignment mark 14. The intensity data detected by the detector 212 is output to the detection circuit 137. The detection circuit 137 converts the analog data into digital data, amplifies it, and outputs it to the control computer 110.

[0296] As the first GMC correction process (S182), the GMC correction unit 68 performs grid matching correction on the pattern data based on the measured positions of each alignment mark 14. For example, with the lower left mark position of the sample 101 as the origin, the x-axis connecting the origin and the lower right mark position, and the y-axis connecting the origin and the upper left mark position are set. The position of the chip pattern (the first chip pattern) drawn on the sample 101 during the first drawing process is defined based on the measured mark position (the first mark position). Therefore, the GMC correction unit 68 corrects the pattern data so that the coordinate system of the pattern data defined in the drawing data is consistent with the x-axis and the y-axis. Thus, it is possible to perform parallel translation, rotation, reduction / enlargement processing on each pattern data based on the origin obtained from multiple alignment marks 14. The method of data conversion can also be the same as the existing method, so the description is omitted.

[0297] In overlapping drawing, the relative positional relationship between the pattern drawn by the first drawing process and the pattern drawn by the second drawing process is important. On the other hand, between the first drawing process and the second drawing process, the sample 101 is unloaded from the workbench 105. Therefore, it is not limited to arranging the sample 101 at exactly the same position on the workbench 105 in the first drawing process and the second drawing process. Therefore, the pattern formation position in the first drawing process is made consistent with the pattern formation position in the second drawing process based on the mark position.

[0298] In each of the above-mentioned embodiments, it is preferable to perform mark measurement and GMC calibration, so that a pattern can be drawn with the mark position on the surface of the sample 101 as a reference.

[0299] As the first drawing process (S184), the emission data generating unit 70 calculates the incident irradiation amount D(x) (dose) for irradiating the pixel 36 for the first drawing process for each pixel 36. In other words, the incident irradiation amount D(x) (dose) is calculated by multiplying the irradiation amount defined in the dose map by the reference irradiation amount Dbase. When the incident irradiation amount D(x) (dose) is defined in the dose map, it can be used directly.

[0300] Next, the emission data generation unit 70 calculates the irradiation time for the first drawing process for each pixel 36. The irradiation time for each pixel 36 can be calculated by dividing the incident irradiation amount D(x) of the pixel by the current density J.

[0301] Then, the data processing unit 72 rearranges the obtained irradiation time data for each pixel 36 in the transmission order for the first drawing process, and stores it in the storage device 142. The transmission processing unit 74 transmits the irradiation time data to the deflection control circuit 130 in the transmission order.

[0302] Under the control of the drawing control unit 76, the drawing mechanism 150 draws a pattern on the sample 101 using the multi-beam 20 (electron beam) based on the beam irradiation position corrected by the correction amount (dx1stn, dy1stn). In other words, the drawing mechanism 150 performs the second correction in the first drawing process based on the difference between the positional deviation amount during drawing in the first drawing process and the final positional deviation amount. The drawing mechanism 150 draws while moving the XY stage 105. Specifically, under the control of the deflection control circuit 130 (an example of a correction unit), the deflector 208 deflects the beam array (irradiation area) to a position corrected by the correction amount (dx1stn, dy1stn) of the global grid area 11 including the representative position of the beam array (for example, the center position or the position of the center beam) in each tracking cycle of the multi-beam 20. The deflection position of the beam array (irradiation area 34) is set based on the representative position of the beam array (for example, the center position or the position of the center beam).

[0303] As a development / etching / resist coating process (S186), the sample 101 is removed from the drawing device 100 and development / etching / resist coating is performed. As a result, a pattern drawn by the first drawing process is formed on the surface of the sample 101. The sample 101 has a light-shielding film of chromium (Cr) or the like formed on a glass substrate, and a resist film is coated on the light-shielding film. The chip pattern (first chip pattern) in the first drawing process is drawn on the resist film by the first drawing process. Then, a resist pattern along this chip pattern is formed by development, and this chip pattern is formed on the light-shielding film by etching and subsequent ashing. Next, in order to perform the second drawing process, the resist film is re-coated on the sample 101, moved into the drawing device 100, and placed on the workbench 105.

[0304] Fig.30 This is a diagram showing an example of a mark position after the first drawing process in the fourth embodiment.

[0305] Fig.31 FIG. 1 is a diagram showing an example of a mark position after the second drawing process of Embodiment 4. The sample 101 is as follows: Fig.30 Then, the sample 101 is deformed irreversibly as shown in FIG. Fig.31 Therefore, the physical positions of the alignment marks 14 on the sample 101 are shifted by the first drawing process and the second drawing process.

[0306] As a mark shift calculation step (S188), the mark shift calculation unit 67 calculates the position shift of the mark position from the mark position (first mark position) before the first drawing process starts, which is caused by the irreversible deformation of the sample 101 after the first drawing process is completed. Specifically, the mark shift calculation unit 67 calculates the position shift (mark shift) of the representative position in the global grid area 11 including each alignment mark 14 at a timing after the first drawing process is completed and before the second drawing process is started. The position shift of each global grid area 11 including each alignment mark 14 is calculated as a mark shift (dxmark-n, dymark-n). n represents the index of each global grid area 11. The mark shift (dxmark-n, dymark-n) of the global grid area 11 including each alignment mark 14 after the first drawing process is completed depends on the irradiation amount (irradiation coefficient) defined in the dose map, and as described above, it can be calculated in the same manner using, for example, the finite element method. The data of the calculated mark offset (dxmark-n, dymark-n) is stored in the storage device 142 .

[0307] The developing / etching / resist coating step ( S186 ) and the mark shift amount calculation step ( S188 ) may be performed either first or simultaneously.

[0308] As the second mark measuring step (S190), the mark position (second mark position) of the alignment mark 14 is measured before the second drawing process is started, in a state where the sample 101 is temporarily removed from the workbench 105 and is placed again on the workbench 105 for the second drawing process. The method of measuring the mark position may be the same as that of the first mark measuring step (S180).

[0309] The data of the chip pattern to be drawn by the first drawing process and the data of the chip pattern to be drawn by the second drawing process are produced on the premise that there is no irreversible deformation of the sample 101 caused by beam irradiation. Therefore, when the chip pattern to be drawn by the second drawing process is drawn based on the positions of each mark measured in the second mark measurement step (S190), the relative position of the pattern to be drawn by the first drawing process and the pattern to be drawn by the second drawing process is offset by the amount of positional offset caused by the irreversible deformation of the sample 101. Therefore, in embodiment 4, for the mark position that serves as the reference in the second drawing process, the amount of positional offset caused by the irreversible deformation of the sample 101 is corrected based on the measurement results. The following is an explanation.

[0310] As a mark position correction process (S192), the mark position correction unit 69 calculates the mark position (third mark position) after the positional offset of the mark position, i.e., the mark offset (dxmark-n, dymark-n), is corrected from the measured mark position (second mark position) before starting the second drawing process. The position of the sample 101 on the workbench 105 during the first mark measurement process (S180) and the position of the sample 101 on the workbench 105 during the second mark measurement process (S190) further generate a positional offset different from the positional offset generated by the irreversible deformation of the sample 101 caused by the first drawing process because the sample 101 is temporarily removed. Therefore, through the mark position correction process (S192), the positional offset of the alignment mark 14 caused by the irreversible deformation of the sample 101 caused by the first drawing process can be corrected from the mark position measured in the second mark measurement process (S190).

[0311] As the second GMC correction process (S194), the GMC correction unit 68 performs grid matching correction on the pattern data based on the position of each alignment mark 14 after correction (the third mark position). For example, with the mark position at the lower left of the sample 101 as the origin, the x-axis connecting the origin and the mark position at the lower right, and the y-axis connecting the origin and the mark position at the upper left are set. The position of the chip pattern (the second chip pattern) drawn on the sample 101 during the second drawing process is defined based on the corrected mark position (the third mark position). Therefore, the GMC correction unit 68 corrects the pattern data so that the coordinate system of the pattern data defined in the drawing data is consistent with the x-axis and the y-axis. Thus, it is possible to perform parallel translation, rotation, reduction / enlargement processing on each pattern data based on the origin obtained from the corrected multiple alignment marks 14. The method of data conversion may also be the same as the existing method, so the description is omitted.

[0312] As the second drawing process (S196), the emission data generating unit 70 calculates the incident irradiation amount D(x) (dose) for irradiating the pixel 36 for the second drawing process for each pixel 36. In other words, the incident irradiation amount D(x) (dose) is calculated by multiplying the irradiation amount defined in the dose map by the reference irradiation amount Dbase. When the incident irradiation amount D(x) (dose) is defined in the dose map, it can be used directly.

[0313] Next, the emission data generation unit 70 calculates the irradiation time for the second drawing process for each pixel 36. The irradiation time for each pixel 36 can be calculated by dividing the incident irradiation amount D(x) of the pixel by the current density J.

[0314] Then, the data processing unit 72 rearranges the obtained irradiation time data for each pixel 36 in the transmission order for the second drawing process and stores it in the storage device 142. The transmission processing unit 74 transmits the irradiation time data to the deflection control circuit 130 in the transmission order.

[0315] Under the control of the drawing control unit 76, the drawing mechanism 150 draws a pattern on the sample 101 using the multi-beam 20 (electron beam) based on the beam irradiation position corrected by the correction amount (dx2ndn, dy2ndn). In other words, the drawing mechanism 150 performs the second correction in the second drawing process based on the difference between the positional deviation amount during drawing in the second drawing process and the final positional deviation amount. The drawing mechanism 150 draws while moving the XY stage 105. Specifically, under the control of the deflection control circuit 130 (an example of a correction unit), the deflector 208 deflects the beam array (irradiation area) to a position corrected by the correction amount (dx2ndn, dy2ndn) of the global grid area 11 including the representative position of the beam array (for example, the center position or the position of the center beam) in each tracking cycle of the multi-beam 20. The deflection position of the beam array (irradiation area 34) is set based on the representative position of the beam array (for example, the center position or the position of the center beam).

[0316] In the modification of the fourth embodiment, the formation position of the pattern may be corrected on the pattern data, similarly to the modification of the second embodiment.

[0317] In a variation of the fourth embodiment, as the first drawing process (S194), the emission data generation unit 70 first corrects the formation position of the pattern on the drawing data based on the first correction amount mapping with the correction amount (dx1stn, dy1stn) for the first drawing process of each global grid area (xn, yn) as the element value. Specifically, the operation is performed as follows. The emission data generation unit 70 corrects the position of the pattern contained in each global grid area 11 with the correction amount defined in the global grid area 11.

[0318] Then, the shot data generating unit 70 re-creates the dose map for the first drawing process using the corrected pattern layout. The method of creating the dose map is the same as described above.

[0319] Then, the emission data generation section 70 calculates the irradiation time for each pixel 36. The irradiation time for each pixel 36 can be calculated by dividing the incident irradiation amount D(x) by the current density J for that pixel.

[0320] Then, the data processing unit 72 rearranges the obtained irradiation time data for each pixel 36 in the transmission order and stores it in the storage device 142. The transmission processing unit 74 transmits the irradiation time data to the deflection control circuit 130 in the transmission order.

[0321] Under the control of the drawing control unit 76, the drawing mechanism 150 draws a pattern on the sample 101 using the multi-beam 20 (electron beam) based on the beam irradiation position corrected by the correction amount as the first drawing process. In the modification of the fourth embodiment, the position of the pattern on the pattern data is corrected by the correction amount (dx1stn, dy1stn) in both the real-time mode and the pre-processing mode. Therefore, when drawing, under the control of the deflection control circuit 130, the deflector 208 deflects the beam array from the representative position of the beam array (for example, the center position or the position of the center beam) to the designed position in each tracking cycle. In the tracking cycle, at this position, while each beam draws (exposes) for example 4 pixels 36, it is only necessary to deflect the multi-beam 20 as a whole through the deflector 208, so that the beam array (irradiation area 34) follows the movement of the XY worktable 105, so as to prevent the relative position of the beam array (irradiation area 34) and the sample 101 from being offset due to the movement of the XY worktable 105.

[0322] Similarly, as the second drawing process (S196), the emission data generation unit 70 first corrects the formation position of the pattern on the drawing data based on the second correction amount mapping with the correction amount (dx2ndn, dy2ndn) for the second drawing process of each global grid area (xn, yn) as the element value. Specifically, the operation is performed as follows. The emission data generation unit 70 corrects the position of the pattern contained in the global grid area 11 with the correction amount defined in the global grid area 11 for each global grid area 11.

[0323] Then, the shot data generating unit 70 re-creates the dose map for the first drawing process using the corrected pattern layout. The method of creating the dose map is the same as described above.

[0324] Then, the emission data generation section 70 calculates the irradiation time for each pixel 36. The irradiation time for each pixel 36 can be calculated by dividing the incident irradiation amount D(x) by the current density J for that pixel.

[0325] Then, the data processing unit 72 rearranges the obtained irradiation time data for each pixel 36 in the transmission order and stores it in the storage device 142. The transmission processing unit 74 transmits the irradiation time data to the deflection control circuit 130 in the transmission order.

[0326] Under the control of the drawing control unit 76, the drawing mechanism 150 draws a pattern on the sample 101 using the multi-beam 20 (electron beam) as the second drawing process based on the beam irradiation position corrected by the correction amount. In the modification of the fourth embodiment, the position of the pattern on the pattern data is corrected by the correction amount (dx2ndn, dy2ndn) in both the real-time mode and the pre-processing mode. Therefore, when drawing, under the control of the deflection control circuit 130, the deflector 208 deflects the beam array from the representative position of the beam array (for example, the center position or the position of the center beam) to the designed position in each tracking cycle. In the tracking cycle, at this position, while each beam draws (exposes) for example 4 pixels 36, it is only necessary to deflect the multi-beam 20 as a whole through the deflector 208, so that the beam array (irradiation area 34) follows the movement of the XY worktable 105, so as to prevent the relative position of the beam array (irradiation area 34) and the sample 101 from being offset due to the movement of the XY worktable 105.

[0327] As described above, according to the fourth embodiment, it is possible to correct the positional deviation of the beam irradiation position and the pattern formation position in the overlap drawing, which is caused by the irreversible deformation of the sample 101 due to the irradiation of the multi-beam 20 (electron beam).

[0328] Implementation method 5.

[0329] In the fifth embodiment, the following case is described: for the overlapping drawing described in the fourth embodiment, when drawing is performed without correction in the first drawing process, the second drawing process is performed in a manner that maintains the relative position relative to the position after drawing by the first drawing process.

[0330] The configuration of the drawing device 100 of the fifth embodiment is the same as that of the first embodiment except that the final position deviation amount calculation unit 52, the correction amount calculation unit 56, and the correction amount map preparation unit 58 are omitted. Fig.24 same.

[0331] Fig.32 This is a diagram showing an example of a state of positional displacement of the substrate surface in the fifth embodiment.

[0332] exist Fig.32 , respectively show the state before the start of the first drawing process, the state when drawing at a desired position in the first drawing process, the state after the first drawing process is completed, the state when drawing at a desired position in the second drawing process, and the state after the second drawing process is completed.

[0333] exist Fig.32In FIG. 1 , the designed beam irradiation position in the first drawing process is represented by vector A11. The designed beam irradiation position in the second drawing process is represented by vector A21. For the target LTEM substrate, if the position of vector A11 before the start of the drawing process is drawn without correction in the first drawing process, then at the time of drawing the position of vector A21 in the second drawing process, Fig.32 As shown, the position of the vector A11 before the start of the drawing process is physically moved to the position of the vector (vector A11+(vector B12-vector B11)) which is moved from the position of the vector A11 before the start of the drawing process by (vector B12-vector B11) due to the deformation caused by the shrinkage of the substrate. Fig.32 As shown, the position of vector A21 before the start of the drawing process is physically moved to the position (vector A21+(vector B12-vector B11)) after the vector shown by (vector B12-vector B11) is moved from the position of vector A21 before the start of the drawing process due to the deformation caused by the shrinkage of the substrate.

[0334] In the fifth embodiment, since the second drawing process is performed with a layout pattern different from that of the first drawing process, the drawing is overlapped in the second drawing process while maintaining the relative positional relationship with the beam irradiation position in the first drawing process.

[0335] Therefore, during the drawing in the second drawing process, the position after the vector correction shown by (vector B12-vector B11) from the position of vector A21 before the start of the process (vector A21+(vector B12-vector B11)) is drawn as the beam irradiation position (or pattern formation position). Thus, after the drawing process of the entire substrate after the second drawing process is completed, the beam irradiation position (or pattern formation position) drawn by the first drawing process and the beam irradiation position (or pattern formation position) drawn by the second drawing process are different from the positions of vectors A11 and A21 before the start of the process, but can also have the same relative position relationship.

[0336] A flowchart showing a part of an example of the main part process of the drawing method of embodiment 5 and a flowchart omitting Fig. 27 The contents of the final position deviation amount (vector C12) calculation step (S103), the correction amount calculation step (S123), the determination step (S124), and the first correction amount map preparation step (S127) in each step of the embodiment are the same. The remaining part of the flowchart showing an example of the main part of the drawing method of the fifth embodiment is the same as Fig.28 In the fifth embodiment, since no correction is performed in the first drawing process, calculation of the correction amount in the first drawing process is not performed.

[0337] The contents of the dose map creation step (S101), the drawing schedule creation step (S107), and the drawing position offset amount (vector B11) calculation step (S121) of the fifth embodiment are the same as those described in the fourth embodiment. Fig. 27 The contents of the dose map preparation step (S101), the drawing schedule preparation step (S107), and the drawing position deviation amount (vector B11) calculation step (S121) are the same.

[0338] In other words, in the drawing position offset (vector B11) calculation step (S121), the drawing position offset calculation unit 54 calculates the drawing position offset (first position offset) of the first chip pattern from the designed position caused by the irreversible deformation of the sample 101 caused by the electron beam irradiating the sample 101 before the irradiation time of the electron beam in the first drawing process of drawing the first chip pattern when the pattern is drawn by irradiating the electron beam with the electron beam.

[0339] The content of the drawing position deviation amount (vector B12) calculation step (S131) ​​of the fifth embodiment is the same as that of the fourth embodiment. Fig. 27 The contents of the drawing position deviation amount (vector B12) calculation step (S131) ​​are the same.

[0340] In other words, in the drawing position offset (vector B12) calculation step (S131), the drawing position offset calculation unit 62 calculates the drawing position offset (second position offset) of the second chip pattern from the designed position at the irradiation time of the electron beam, which is caused by the irreversible deformation of the sample 101 caused by the electron beam irradiating the sample 101 before the irradiation time, in the second drawing process of drawing the second chip pattern in a manner overlapping with the first chip pattern.

[0341] As a correction amount calculation step (S133), the correction amount calculation unit 64 calculates a correction amount (vector B12-vector B11) (another example of the first correction amount) for correcting the position of pattern formation or beam irradiation position when irradiating the electron beam in the second drawing process corresponding to the electron beam of the object in the first drawing process, based on the position shift amount (vector B11) as a reference. Based on the difference between the position shift amount (vector B12) during drawing in the second drawing process and the position shift amount (vector B11) during drawing in the first drawing process, the correction amount (vector B12-vector B11) (another example of the first correction amount) for correcting the position of the pattern or the irradiation position of the electron beam when the pattern is formed by irradiating the electron beam to the sample 101 is calculated in the second drawing process. In other words, the correction amount (dx2ndn, dy2ndn) of each position within the global grid area 11 of the nth beam irradiation (drawing) can be calculated by the position offset during drawing (dx2ndwrite-n, dy2ndwrite-n) - the position offset during drawing (dx1stwrite-n, dy1stwrite-n).

[0342] The contents of the determination step (S134) and the second correction amount map creation step (S137) of the fifth embodiment are the same as those described in the fourth embodiment. Fig. 27 The contents of the determination step (S134) and the second correction amount map preparation step (S137) are the same.

[0343] The contents of the first mark measurement step (S180) and the first GMC correction step (S182) of the fifth embodiment are the same as those of the first embodiment. Fig.28 The contents are the same as those described in the first mark measurement step (S180) and the first GMC correction step (S182).

[0344] The drawing mechanism 150 of the fifth embodiment corrects the position of the pattern or the irradiation position of the electron beam when the pattern is formed by irradiating the sample 101 with an electron beam in the second drawing process, based on the difference between the positional deviation amount during drawing in the second drawing process and the positional deviation amount during drawing in the first drawing process. In addition, the drawing mechanism 150 performs the first drawing process of drawing the first chip pattern on the sample 101 and the second drawing process of drawing the second chip pattern on the sample 101 based on the correction amount. The following is a specific description.

[0345] In the first drawing process (S184), the emission data generator 70 uses the dose map used for the first drawing process to calculate the irradiation time for each pixel 36. The irradiation time for each pixel 36 can be calculated by dividing the incident irradiation amount D(x) of the pixel by the current density J.

[0346] Then, the data processing unit 72 rearranges the obtained irradiation time data for each pixel 36 in the transmission order and stores it in the storage device 142. The transmission processing unit 74 transmits the irradiation time data to the deflection control circuit 130 in the transmission order.

[0347] Under the control of the drawing control unit 76, the drawing mechanism 150 draws a pattern on the sample 101 using the multi-beam 20 (electron beam) as the first drawing process. In the fifth embodiment, in the real-time mode and the pre-processing mode, when drawing is performed, under the control of the deflection control circuit 130, the deflector 208 deflects the beam array from the representative position of the beam array (for example, the center position or the position of the center beam) to the designed position in each tracking cycle. In the tracking cycle, at this position, while each beam draws (exposes) four pixels 36, for example, at this position, the multi-beam 20 is deflected as a whole by the deflector 208, so that the beam array (irradiation area 34) follows the movement of the XY stage 105, so that the relative position of the beam array (irradiation area 34) and the sample 101 is not shifted due to the movement of the XY stage 105.

[0348] The contents of each step from the development / etching / resist coating step (S186) to the second GMC correction step (S194) are the same as those described in the fourth embodiment. Fig.28 The contents of each process from the developing / etching / resist coating process (S186) to the second GMC correction process (S194) are the same.

[0349] In the second drawing process (S196), the emission data generating unit 70 calculates the incident irradiation amount D(x) (dose) for irradiating the pixel 36 for the second drawing process for each pixel 36. In other words, the incident irradiation amount D(x) (dose) is calculated by multiplying the irradiation amount defined in the dose map by the reference irradiation amount Dbase. When the incident irradiation amount D(x) (dose) is defined in the dose map, it can be used directly.

[0350] Next, the emission data generation unit 70 calculates the irradiation time for the second drawing process for each pixel 36. The irradiation time for each pixel 36 can be calculated by dividing the incident irradiation amount D(x) of the pixel by the current density J.

[0351] Then, the data processing unit 72 rearranges the obtained irradiation time data for each pixel 36 in the transmission order for the second drawing process and stores it in the storage device 142. The transmission processing unit 74 transmits the irradiation time data to the deflection control circuit 130 in the transmission order.

[0352] Under the control of the drawing control unit 76, the drawing mechanism 150 draws a pattern on the sample 101 using the multi-beam 20 (electron beam) based on the beam irradiation position corrected by the correction amount (dx2ndn, dy2ndn). The drawing mechanism 150 draws while moving the XY stage 105. Specifically, under the control of the deflection control circuit 130 (an example of a correction unit), the deflector 208 deflects the beam array (irradiation area) to a position corrected by the correction amount (dx2ndn, dy2ndn) of the global grid area 11 including the representative position of the beam array (for example, the center position or the position of the center beam) in each tracking cycle of the multi-beam 20. The deflection position of the beam array (irradiation area 34) is set based on the representative position of the beam array (for example, the center position or the position of the center beam).

[0353] In the modification of the fifth embodiment, the formation position of the pattern may be corrected on the pattern data, similarly to the modification of the fourth embodiment.

[0354] The content of the first drawing step (S194) of the modification of the fifth embodiment is the same as the first drawing step (S194) of the fifth embodiment.

[0355] In the second drawing process (S196) of the variation of the fifth embodiment, the emission data generation unit 70 first corrects the formation position of the pattern on the drawing data based on the correction amount mapping with the correction amount (dx2ndn, dy2ndn) for the second drawing process of each global grid area (xn, yn) as the element value. Specifically, the operation is performed as follows. The emission data generation unit 70 corrects the position of the pattern contained in each global grid area 11 with the correction amount defined in the global grid area 11.

[0356] Then, the shot data generating unit 70 re-creates the dose map for the first drawing process using the corrected pattern layout. The method of creating the dose map is the same as described above.

[0357] Then, the emission data generation section 70 calculates the irradiation time for each pixel 36. The irradiation time for each pixel 36 can be calculated by dividing the incident irradiation amount D(x) by the current density J for that pixel.

[0358] Then, the data processing unit 72 rearranges the obtained irradiation time data for each pixel 36 in the transmission order and stores it in the storage device 142. The transmission processing unit 74 transmits the irradiation time data to the deflection control circuit 130 in the transmission order.

[0359] Under the control of the drawing control unit 76, the drawing mechanism 150 draws a pattern on the sample 101 using the multi-beam 20 (electron beam) based on the beam irradiation position corrected by the correction amount as the second drawing process. In the modification of the fifth embodiment, the position of the pattern on the pattern data is corrected by the correction amount (dx2ndn, dy2ndn) in both the real-time mode and the pre-processing mode. Therefore, when drawing, under the control of the deflection control circuit 130, the deflector 208 deflects the beam array from the representative position of the beam array (for example, the center position or the position of the center beam) to the designed position in each tracking cycle. In the tracking cycle, at this position, while each beam draws (exposes) for example 4 pixels 36, it is only necessary to deflect the multi-beam 20 as a whole through the deflector 208, so that the beam array (irradiation area 34) follows the movement of the XY worktable 105, so as to prevent the relative position of the beam array (irradiation area 34) and the sample 101 from being offset due to the movement of the XY worktable 105.

[0360] As described above, according to embodiment 5, even when the positional offset of the beam irradiation position and the pattern formation position in the first drawing process in the overlapping drawing is not corrected, the positional offset of the beam irradiation position and the pattern formation position caused by the irreversible deformation of the sample 101 caused by the irradiation of the multi-beam 20 (electron beam) can be corrected in the second drawing process.

[0361] The embodiments have been described above with reference to specific examples, but the present invention is not limited to these specific examples.

[0362] Furthermore, the program for causing a computer to execute the processing functions described in each embodiment may be stored in a non-transitory tangible readable recording medium such as a magnetic disk device.

[0363] In addition, descriptions of parts not directly required for the description of the present invention such as device configurations and control methods are omitted, but it is also possible to select and use the required device configurations and control methods as appropriate. For example, descriptions of the control unit configuration for controlling the rendering device 100 are omitted, but it is of course possible to select and use the required control unit configuration as appropriate.

[0364] Furthermore, all electron beam drawing methods, electron beam drawing devices, and programs that have the elements of the present invention and can be appropriately designed and modified by a person skilled in the art are included in the scope of the present invention.

Claims

1. An electron beam drawing method, wherein: calculating a first positional shift amount of the pattern from a designed position caused by the irreversible deformation of the sample after the drawing process when a pattern is drawn by irradiating the sample that is irreversibly deformed depending on the irradiation dose distribution of the electron beam, calculating a correction amount for correcting the position of the pattern or the irradiation position of the electron beam when the sample is irradiated with the electron beam to form the pattern based on the first position shift amount, Based on the correction amount, a drawing process is performed to draw the pattern on the sample.

2. The electron beam drawing method according to claim 1, wherein: In the drawing process, a second position shift amount of the pattern from a designed position caused by irreversible deformation of the sample due to the electron beam irradiating the sample before the irradiation time is calculated. The correction is performed based on a difference between the second positional deviation amount and the first positional deviation amount.

3. The electron beam drawing method according to claim 1, wherein: The drawing process includes a first drawing process of drawing a first chip pattern, and a second drawing process performed after the first drawing process of drawing a second chip pattern so as to overlap with the first chip pattern. The first positional deviation is a positional deviation of the pattern from a designed position caused by irreversible deformation of the sample after the second drawing process is completed.

4. The electron beam drawing method according to claim 3, wherein: In the first drawing process, a second positional offset from the designed position caused by irreversible deformation of the sample due to the electron beam irradiating the sample before the irradiation time is calculated. In the second drawing process, a third positional offset from the designed position caused by irreversible deformation of the sample due to the electron beam irradiating the sample before the irradiation time is calculated. The above correction amount is calculated as, calculating a first correction amount in the first drawing process based on a difference between the second positional shift amount and the first positional shift amount, A second correction amount in the second drawing process is calculated based on a difference between the third positional shift amount and the first positional shift amount.

5. The electron beam drawing method according to claim 3, wherein: Alignment marks are pre-formed on the sample. The above sample is placed on a movable workbench. before the first drawing process, measuring a first mark position of the mark; calculating a positional shift amount of a marking position from the first marking position caused by irreversible deformation of the sample after the first drawing process is completed, In a state where the sample is temporarily removed from the workbench and placed again on the workbench for the second drawing process, before the second drawing process starts, the second mark position of the mark is measured, Before the second drawing process starts, a third mark position is calculated by correcting the positional deviation amount of the mark position from the second mark position, defining the position of the first chip pattern drawn on the sample during the first drawing process based on the first mark position, The position of the second chip pattern drawn on the sample during the second drawing process is defined based on the third mark position.

6. An electron beam drawing device comprising: A worktable on which a sample that is irreversibly deformed depending on the irradiation dose distribution of the electron beam is placed; a first position shift amount calculation circuit for calculating a first position shift amount of the pattern from a designed position caused by irreversible deformation of the sample after the pattern is drawn using an electron beam; a correction amount calculation circuit that calculates a correction amount for correcting the position of the pattern or the irradiation position of the electron beam when the sample is irradiated with the electron beam based on the first position shift amount; and The drawing mechanism draws the above-mentioned pattern on the above-mentioned sample based on the above-mentioned correction amount.

7. A non-transitory tangible readable recording medium having a program recorded thereon, wherein: The above program is used to make the computer perform the following functions: A function for calculating a first positional deviation of the pattern from a designed position caused by the irreversible deformation of the sample after the drawing process when a pattern is drawn by irradiating the sample with the electron beam, which irreversibly deforms depending on the irradiation amount distribution of the electron beam; A function of storing the first position offset in a storage device; and A function of reading the first positional deviation amount from the storage device, and calculating and outputting a correction amount for correcting the position of the pattern or the irradiation position of the electron beam when the sample is irradiated with the electron beam to form the pattern based on the first positional deviation amount.

8. An electron beam drawing method, wherein: In a first drawing process of drawing a first chip pattern when drawing a pattern by irradiating the electron beam to a sample that is irreversibly deformed depending on the irradiation amount distribution of the electron beam, a first position shift amount of the first chip pattern from a designed position caused by the irreversible deformation of the sample caused by the electron beam irradiating the sample before the irradiation time is calculated. In a second drawing process of drawing a second chip pattern in a manner overlapping with the first chip pattern, a second positional offset of the second chip pattern from a designed position caused by irreversible deformation of the sample caused by the electron beam irradiating the sample before the irradiation time at the electron beam irradiation time is calculated, Based on the difference between the second position shift amount and the first position shift amount, in the second drawing process, a correction amount for correcting the position of the pattern or the irradiation position of the electron beam when the sample is irradiated with the electron beam to form the pattern is calculated; The first drawing process of drawing the first chip pattern on the sample and the second drawing process of drawing the second chip pattern on the sample based on the correction amount are performed.

9. The electron beam drawing method according to claim 8, wherein: At the irradiation timing of the electron beam in the second image drawing process, the electron beam in the second image drawing process is irradiated to a position overlapping with the beam irradiation position in the first image drawing process.

10. The electron beam drawing method according to claim 8, wherein: The second chip pattern is drawn by the second drawing process so as to overlap the first chip pattern while maintaining the relative positional relationship between the beam irradiation position in the first drawing process and the beam irradiation position in the second drawing process.

11. An electron beam drawing device comprising: A worktable on which a sample that is irreversibly deformed depending on the irradiation dose distribution of the electron beam is placed; a position shift calculation circuit for calculating, in a first drawing process of drawing a first chip pattern on the sample by the electron beam, a first position shift of the first chip pattern from a designed position caused by irreversible deformation of the sample caused by the electron beam irradiating the sample before the irradiation time at the irradiation time of the electron beam, and for calculating, in a second drawing process of drawing a second chip pattern in a manner overlapping with the first chip pattern, a second position shift of the second chip pattern from a designed position caused by irreversible deformation of the sample caused by the electron beam irradiating the sample before the irradiation time at the irradiation time of the electron beam; a correction amount calculation circuit that calculates a correction amount for correcting the position of the pattern or the irradiation position of the electron beam when the sample is irradiated with the electron beam to form the pattern in the second drawing process, based on a difference between the second position shift amount and the first position shift amount; and The drawing mechanism performs the first drawing process of drawing the first chip pattern on the sample and the second drawing process of drawing the second chip pattern on the sample based on the correction amount.

12. A non-transitory tangible readable recording medium having a program recorded thereon, wherein: The above program is used to make the computer perform the following functions: In a first drawing process of drawing a first chip pattern by the electron beam on a sample that is irreversibly deformed depending on the irradiation amount distribution of the electron beam, a function of calculating a first positional offset of the first chip pattern from a designed position caused by the irreversible deformation of the sample caused by the electron beam irradiating the sample before the irradiation time at the irradiation time of the electron beam; In a second drawing process of drawing a second chip pattern in a manner overlapping with the first chip pattern, a function of calculating a second positional offset of the second chip pattern from a designed position caused by irreversible deformation of the sample caused by the electron beam irradiating the sample before the irradiation time at the irradiation time of the electron beam; A function of storing the first position offset and the second position offset in a storage device; and The first position offset and the second position offset are read out from the storage device, and based on the difference between the second position offset and the first position offset, a function of calculating and outputting a correction amount for correcting the position of the pattern or the irradiation position of the electron beam when the sample is irradiated with the electron beam to form the pattern in the second drawing process.

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