Photoetching developing method and developing device
By determining whether the photoresist layer contains surfactant and performing corresponding treatment, the problem of incomplete development of the photoresist layer is solved, the development quality of the photoresist layer is improved, and the defects of missing patterns are reduced.
Patent Information
- Application Number
- CN202310696949.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-06-12
- Publication Date
- 2024-12-13
AI Technical Summary
During semiconductor manufacturing, the photoresist layer is prone to defects in patterns after development, especially concentrated in the center of the defect pattern, resulting in incomplete development of contact holes or through holes, resulting in photoresist residues.
By determining whether the photoresist layer contains surfactant, it is determined whether to perform pretreatment. If the surfactant is contained, the wetting treatment is performed to promote the reaction between the developer and the photoresist layer; if not, whether to pretreat is performed according to the decomposition rate of the developer is determined to avoid water residue and incomplete development.
It effectively reduces the defects of pattern missing, improves the development quality of the photoresist layer, ensures the integrity of contact holes or through holes, and avoids photoresist residues.
Smart Images
Figure CN119126505A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a photolithography development method and a development device. Background Art
[0002] With the rapid development of integrated circuits, the feature size continues to shrink, and higher and higher requirements are placed on product defects. Semiconductor contact hole or through hole process (contact hole, referred to as CT; through hole, referred to as Via) is an important process in the semiconductor back-end process. For some products, in actual production, defects with missing patterns are found at the defect detection site, and they are concentrated in the center of the defect map (Map), such as Figure 1 shown. Summary of the invention
[0003] Based on this, it is necessary to provide a photolithography development method and a development device that can reduce pattern missing defects in response to at least one of the above technical problems.
[0004] In a first aspect, the present application provides a photolithography development method, the method comprising:
[0005] Providing a wafer having an exposed photoresist layer on its surface;
[0006] determining whether the photoresist layer contains a surfactant;
[0007] If the photoresist layer contains a surfactant, a pretreatment is performed, wherein the pretreatment includes wetting the photoresist layer before spraying the developer;
[0008] If the photoresist layer does not contain a surfactant, no pretreatment is performed;
[0009] The exposed photoresist layer is sprayed with a developing solution and developed.
[0010] In one embodiment, the photoresist layer does not contain a surfactant, and the pretreatment step is not performed, and the step further includes:
[0011] Obtaining a decomposition rate of the exposed photoresist layer in a developer;
[0012] If the photoresist layer does not contain a surfactant and the decomposition rate is greater than a preset rate, the pretreatment is performed;
[0013] If the photoresist layer does not contain a surfactant and the decomposition rate is not greater than a preset rate, the pretreatment is not performed.
[0014] In one embodiment, before the step of obtaining the decomposition rate of the exposed photoresist layer in the developer, the step further includes:
[0015] Obtaining the initial thickness of the exposed photoresist layer;
[0016] Spraying the developer on the exposed photoresist layer;
[0017] Acquire the current thickness and reaction time of the exposed photoresist layer;
[0018] The decomposition rate is obtained according to the initial thickness, the current thickness and the reaction time.
[0019] In one embodiment, the step of obtaining the decomposition rate according to the initial thickness, the current thickness and the reaction time comprises:
[0020] Calculating the difference between the initial thickness and the current thickness to obtain a reaction thickness;
[0021] The decomposition rate is obtained by calculating the quotient of the reaction thickness and the reaction time.
[0022] In one embodiment, the step of spraying a developer on the exposed photoresist layer and developing the layer comprises:
[0023] Spraying the developer on the exposed photoresist layer on the stationary wafer;
[0024] Controlling the wafer to rotate and spraying the developer on the exposed photoresist layer;
[0025] After a preset time, the exposed photoresist layer is rinsed and dried to complete the development.
[0026] In one of the embodiments, the developer is tetramethylammonium hydroxide developer, and the type of the photoresist layer is positive photoresist.
[0027] In one embodiment, the wetting treatment is to use deionized water to wet the surface of the photoresist layer.
[0028] In one embodiment, if the pretreatment is not performed, the step of spraying the developer on the exposed photoresist layer and developing it includes: completing the development by adjusting the scanning path of the developer nozzle, and / or the amount of developer, and / or the development time.
[0029] In one embodiment, the step of completing the developing by adjusting the scanning path of the developer nozzle, and / or the developer dosage, and / or the developing time, comprises:
[0030] The development is completed by adjusting the developer nozzle to a fan-shaped scanning path, and / or increasing the amount of developer, and / or increasing the development time.
[0031] In a second aspect, the present application provides a photolithography developing device, the device comprising:
[0032] A wafer providing module is used to provide a wafer having an exposed photoresist layer on its surface;
[0033] A judging module, used for judging whether the photoresist layer contains a surfactant. If the photoresist layer contains a surfactant, a pretreatment is performed, wherein the pretreatment includes wetting the photoresist layer before spraying a developer; if the photoresist layer does not contain a surfactant, no pretreatment is performed;
[0034] The developing module is used for spraying a developing solution on the exposed photoresist layer and performing developing.
[0035] The above-mentioned photolithography development method and development device determine whether to pre-treat the exposed photoresist layer by judging whether the photoresist layer contains a surfactant, and then spray the developer on the exposed photoresist layer and develop it. Since the photoresist layer is pre-treated without a surfactant, water residue is likely to remain on the surface of the photoresist layer. When the water remains on the photoresist layer, it will prevent the developer from reacting with the photoresist layer, which is likely to cause photoresist residue and produce a defect of missing patterns. The present application determines whether the photoresist layer needs to be pre-treated by judging whether the photoresist layer contains a surfactant, and does not pre-treat the photoresist without a surfactant, so as to prevent incomplete development of the photoresist layer, thereby avoiding the defect of missing patterns and effectively improving the quality of the pattern. BRIEF DESCRIPTION OF THE DRAWINGS
[0036] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0037] Figure 1 A schematic diagram of a defect in which a contact hole or a through hole is missing;
[0038] Figure 2 is a schematic flow chart of a photolithography development method in one embodiment;
[0039] Figure 3 is a schematic flow chart of a photolithography development method in another embodiment;
[0040] Figure 4 is a schematic diagram of decomposition rates under different dosages and different developers in one embodiment;
[0041] Figure 5A schematic diagram of a decomposition rate obtained in one embodiment;
[0042] Figure 6 A schematic diagram of calculating the decomposition rate in one embodiment;
[0043] Figure 7 is a schematic diagram of a development process in one embodiment;
[0044] Figure 8 A schematic diagram of the number of defects with or without pretreatment and under different developing solutions in one embodiment;
[0045] Fig. 9 Schematic diagram of a module of a photolithography developing device in one embodiment. DETAILED DESCRIPTION
[0046] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.
[0047] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.
[0048] It can be understood that the terms "first", "second", etc. used in the present application can be used in this article to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish the first element from another element.
[0049] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that, in addition to the orientations shown in the figures, spatially relative terms also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is flipped, an element or feature described as "under other elements" or "under it" or "under it" will be oriented as being "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.
[0050] It should be noted that when an element is considered to be "connected" to another element, it can be directly connected to the other element, or connected to the other element through an intermediate element. In addition, the "connection" in the following embodiments should be understood as "electrical connection", "communication connection", etc. if there is transmission of electrical signals or data between the connected objects.
[0051] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" and the like specify the presence of stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. At the same time, the term "and / or" used in this specification includes any and all combinations of the relevant listed items.
[0052] As described in the background technology, in the semiconductor back-end process, there will be a problem of missing contact holes or through holes at the center of the wafer. The inventors have found that the reason for this problem is incomplete development, that is, there is photoresist residue at the location of the contact hole or through hole after development.
[0053] Based on the above reasons, the present application provides a photolithography development method and a development device, which can reduce the defects of missing contact holes or through holes.
[0054] In one embodiment, Figure 2 As shown, a photolithography development method is provided, comprising:
[0055] Step S100, providing a wafer having an exposed photoresist layer on its surface.
[0056] Specifically, the photolithography development method of the embodiment of the present application is applied to the semiconductor back-end process, and is a method for developing a photoresist layer after being processed by the coating and exposure process. First, after the wafer is processed by the coating and exposure process, a photoresist layer is formed on the wafer, and then the wafer with the exposed photoresist layer on the surface is provided to the developing device.
[0057] Step S200, determining whether the photoresist layer contains a surfactant.
[0058] Specifically, by obtaining the type of photoresist used in the coating process, it can be determined whether the photoresist layer on the current wafer contains a surfactant.
[0059] Step S300: If the photoresist layer contains a surfactant, pretreatment is performed, which includes wetting the photoresist layer before spraying the developer.
[0060] Specifically, if the photoresist layer contains a surfactant, the exposed photoresist layer is pre-treated for surface wetting. Since the surfactant in the photoresist layer can reduce the surface tension, the developer and the photoresist layer are in full contact, so that the developer reacts completely during development, so that the developer obtains a better coating effect and avoids the residue of the exposed photoresist layer. The pre-treatment includes wetting the photoresist layer before the developer is sprayed. For example, water is used to wet the surface of the photoresist layer.
[0061] In step S400, if the photoresist layer does not contain a surfactant, no pretreatment is performed.
[0062] Specifically, if the photoresist layer does not contain a surfactant, water residue is likely to remain after pretreatment. In this case, the exposed photoresist layer is not pretreated before spraying the developer to prevent water residue from remaining on the surface of the photoresist layer.
[0063] Step S500, spraying a developing solution on the exposed photoresist layer and developing it.
[0064] Specifically, it is determined whether to pre-treat the exposed photoresist layer and after executing corresponding steps, a developer is sprayed on the exposed photoresist layer and a subsequent development step is performed.
[0065] The photolithography development method of the embodiment of the present application determines whether to pre-treat the exposed photoresist layer by judging whether the photoresist layer contains a surfactant, and then sprays the developer on the exposed photoresist layer and develops it. Since the photoresist layer is pre-treated without a surfactant, water residue is likely to remain on the surface of the photoresist layer. When the water residue remains on the photoresist layer, it will prevent the developer from reacting with the photoresist layer, which is likely to cause photoresist residue and produce a defect of missing patterns. By judging whether the photoresist layer contains a surfactant, it is judged whether the photoresist layer needs to be pre-treated, and the photoresist without a surfactant is not pre-treated, so as to prevent the photoresist layer from being incompletely developed, thereby avoiding the defect of missing patterns.
[0066] In one embodiment, Figure 3 As shown, the photolithography development method includes step S110, determining whether the photoresist contains a surfactant, if so, executing step S132, otherwise executing step S120.
[0067] Step S110 is performed after the photoresist is exposed and before the developer is sprayed.
[0068] Step S120, determining whether the decomposition rate of the exposed photoresist in the developer is greater than a preset rate, if so, executing step S132, otherwise executing step S134.
[0069] In one embodiment of the present application, before step S120, a step of obtaining a decomposition rate of the exposed photoresist layer in a developer may be included.
[0070] Specifically, the decomposition rate of the stored current type of photoresist in the current type of developer is obtained. It is understandable that the decomposition rate of the developer at different concentrations for photoresist layers with different exposure doses is different. Therefore, when obtaining the decomposition rate, it is necessary to obtain the corresponding decomposition rate according to the current developer concentration setting and the exposure dose setting of the photoresist layer. Among them, the decomposition rates at different concentrations and different doses can be obtained in advance.
[0071] Step S132, perform preprocessing.
[0072] The pretreatment includes wetting the exposed photoresist layer before spraying the developer. After the photoresist layer has undergone the exposure process, the decomposition rate of the exposed photoresist layer of the current dose in the developer of the current concentration is obtained at the same time, and then whether the exposed photoresist is pretreated is determined by combining whether the photoresist contains a surfactant and the relationship between the decomposition rate and the preset rate. Specifically, in the case where the photoresist layer does not contain a surfactant, if the decomposition rate of the photoresist layer is greater than the preset rate, it means that the decomposition rate of the photoresist layer in the current developer is relatively high. At this time, even if the photoresist layer is pretreated and there is water residue on the photoresist layer, the decomposition rate of the photoresist layer by the developer is still at a relatively high level, and the photoresist can be fully decomposed, so the exposed photoresist layer can be pretreated.
[0073] Step S134: no preprocessing is performed.
[0074] In the case where the photoresist layer does not contain a surfactant, if the decomposition rate of the photoresist layer is not greater than a preset rate, the exposed photoresist layer is not pretreated to prevent the developer from incompletely decomposing the photoresist layer.
[0075] In some other embodiments, when the photoresist layer contains a surfactant, there is no need to judge the decomposition rate of the photoresist layer, and the exposed photoresist layer can be directly pretreated. At this time, under the action of the surfactant, the photoresist layer can still fully react in the developer with a reduced concentration, and the developer will not incompletely decompose the photoresist.
[0076] Specific examples, such as Figure 4As shown, the decomposition rate of the exposed photoresist layer (without surfactant) under different exposure doses (exposure dose as the horizontal axis, in millijoules) of three different concentrations of tetramethylammonium hydroxide developers TMAH-1, TMAH-2 and TMAH-3. The preset rate is set to 800nm / s (i.e., 800nm thick exposed photoresist layer is decomposed per second), and the developer with a decomposition rate greater than the preset rate can be pretreated before spraying, that is, the developer located in the pretreatment process area can be pretreated; the developer with a decomposition rate not greater than the preset rate cannot be pretreated before spraying, that is, the developer located in the non-pretreatment process area cannot be pretreated.
[0077] In one embodiment, Figure 5 As shown, before the step of obtaining the decomposition rate of the exposed photoresist layer in the developer, the method further includes:
[0078] Step S310, obtaining the initial thickness of the exposed photoresist layer. Specifically, the film thickness of the exposed photoresist layer can be measured by a reflection spectrum film thickness meter and used as the initial thickness.
[0079] Step S320, spraying developer on the exposed photoresist layer. Specifically, after measuring the initial thickness, spraying developer on the exposed photoresist layer by a developer spraying device. It is understandable that, in this embodiment, the exposed photoresist layer is not pre-treated before spraying developer on the exposed photoresist layer. In some other embodiments, when measuring the decomposition rate, the exposed photoresist layer may also be pre-treated before spraying developer. At this time, by changing the size of the preset rate, it is also possible to determine whether the exposed photoresist layer needs to be pre-treated.
[0080] Step S330, obtaining the current thickness and reaction time of the exposed photoresist layer. Specifically, the current thickness is the thickness of the exposed photoresist layer remaining after the developer is sprayed on the exposed photoresist layer and the reaction time is continued, which can be measured by a reflective spectroscopy film thickness meter.
[0081] Step S340, obtaining the decomposition rate according to the initial thickness, the current thickness and the reaction time. Specifically, after obtaining the initial thickness, the current thickness and the reaction time, the decomposition rate can be calculated according to these three parameters. It is understandable that the decomposition rate can be calculated by collecting the above data at different positions on the exposed photoresist layer, so that the obtained decomposition rate can be more accurate.
[0082] In one embodiment, Figure 6 As shown, in step S340, the step of obtaining the decomposition rate according to the initial thickness, the current thickness and the reaction time includes:
[0083] Step S341, calculating the difference between the initial thickness and the current thickness to obtain the reaction thickness. Specifically, the thickness of the photoresist decomposed by the developer, ie, the reaction thickness, can be obtained by subtracting the current thickness from the initial thickness.
[0084] Step S342, calculate the quotient of the reaction thickness and the reaction time to obtain the decomposition rate. Specifically, the decomposition rate can be obtained by dividing the reaction thickness by the reaction time. For example, if the initial thickness is 900nm, the current thickness is 100nm, the reaction thickness is 800nm, and the measured reaction time is 20s, the decomposition rate obtained at this time is 40nm / s.
[0085] In one embodiment, Figure 7 As shown, in step S500, the step of spraying a developer on the exposed photoresist layer and developing the layer includes:
[0086] Step S510, spraying a developer on the exposed photoresist layer on the stationary wafer. Specifically, firstly, spraying a developer on the exposed photoresist layer on the stationary wafer, and allowing the developer to react with the photoresist for a period of time.
[0087] Step S520, control the wafer to rotate and spray the developer on the exposed photoresist layer. Specifically, after the photoresist is statically developed for a period of time, control the wafer to rotate and continue to spray the developer on the exposed photoresist layer to dynamically develop the photoresist layer. The byproducts of the reaction between the developer and the photoresist layer will separate from the wafer surface during the rotation of the wafer.
[0088] Step S530, after a preset time, the exposed photoresist layer is rinsed and dried to complete the development. Specifically, through the above-mentioned static development and dynamic development process, the developer and the photoresist layer are reacted for a preset time so that the photoresist layer is fully developed. Finally, the photoresist layer after the reaction is completed is rinsed and dried to complete the development process of the exposed photoresist layer.
[0089] In one embodiment, the developer is tetramethylammonium hydroxide developer, and the type of the photoresist layer is positive photoresist. Specifically, the developer in the embodiment of the present application is tetramethylammonium hydroxide (TMAH) developer, which is an organic compound with a chemical formula of C4H 13 The common concentration of NO, TMAH aqueous developer is 2.38%. The type of photoresist layer is positive photoresist. Depending on the exposure dose, the photoresist has different decomposition rates under different concentrations of developer.
[0090] In one embodiment, the wetting treatment is to wet the surface of the photoresist layer with deionized water. Specifically, the wetting treatment in this embodiment is to wet the surface of the exposed photoresist layer with deionized water. For example, when the rotation speed of the wafer is 30 RPM (revolutions per minute), the exposed photoresist layer is sprayed with deionized water for 8 seconds to completely wet the photoresist layer with the deionized water.
[0091] In one embodiment, if no pretreatment is performed, the step of spraying developer on the exposed photoresist layer and developing includes: completing the development by adjusting the scanning path of the developer spray head, and / or the developer dosage, and / or the development time.
[0092] Specifically, the scanning path of the developer nozzle, the developer dosage and the development time all affect the decomposition rate and decomposition effect of the photoresist layer. By adjusting the parameters separately or synchronously, the decomposition effect of the developer on the exposed photoresist layer can be adjusted.
[0093] In one embodiment, the step of completing the development by adjusting the scanning path of the developer nozzle, and / or the amount of developer, and / or the development time includes: completing the development by adjusting the developer nozzle to a fan-shaped scanning path, and / or increasing the amount of developer, and / or increasing the development time.
[0094] Specifically, if the photoresist does not contain a surfactant and is not pretreated, the defect of pattern missing can be avoided, but the problem of poor development effect will occur. To improve the development effect, at least one of adjusting the developer nozzle to a fan-shaped scanning path, increasing the amount of developer, and increasing the development time can be used to improve the decomposition effect of the developer on the photoresist layer, so as to obtain the best process window without pretreatment.
[0095] In one embodiment, the photolithography development method of the present application is applied to the photolithography of the through hole or contact hole level, that is, the photoresist layer formed after development is used as a barrier layer for etching the through hole or contact hole.
[0096] like Figure 8 As shown in the figure, it is a schematic diagram of the number of defects on the surface of the wafer with or without pretreatment at different developer concentrations. Among them, TMAH-1, TMAH-2 and TMAH-3 are three developers with decreasing concentrations. It can be seen from the figure that when the photoresist layer is not pretreated, the number of defects on different wafers is in a relatively small state. Therefore, canceling the pretreatment step before spraying the developer can well solve the defect of missing contact holes or through holes. In the case of pretreatment of the photoresist layer, the number of defects is small only when the concentration of the developer is high. When the developer concentration is low, there will be more defects of missing contact holes or through holes.
[0097] Based on the same inventive concept, the embodiment of the present application also provides a photolithography developing device for implementing the above-mentioned photolithography developing method. The implementation solution provided by the device to solve the problem is similar to the implementation solution recorded in the above-mentioned method, so the specific limitations in one or more photolithography developing device embodiments provided below can refer to the above-mentioned limitations on the photolithography developing method, and will not be repeated here.
[0098] In one embodiment, Fig. 9 As shown, a photolithography developing device is provided, comprising: a wafer providing module 610, a judging module 620 and a developing module 630. The wafer providing module 610 is used to provide a wafer having an exposed photoresist layer on the surface; the judging module 620 is used to judge whether the photoresist layer contains a surfactant. If the photoresist layer contains a surfactant, a pretreatment is performed, and the pretreatment includes wetting the photoresist layer before spraying the developer; if the photoresist layer does not contain a surfactant, no pretreatment is performed; and the developing module 630 is used to spray the developer on the exposed photoresist layer and perform development.
[0099] In one embodiment, a computer device is provided, including a memory and a processor, wherein a computer program is stored in the memory, and the processor implements the steps in the above-mentioned method embodiments when executing the computer program.
[0100] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the processor executes the computer program, the steps in the above-mentioned method embodiments are implemented.
[0101] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "specific embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.
[0102] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0103] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.
Claims
1. A photolithography development method, characterized in that: The method comprises: Providing a wafer having an exposed photoresist layer on its surface; determining whether the photoresist layer contains a surfactant; If the photoresist layer contains a surfactant, a pretreatment is performed, wherein the pretreatment includes wetting the photoresist layer before spraying the developer; If the photoresist layer does not contain a surfactant, no pretreatment is performed; The exposed photoresist layer is sprayed with a developing solution and developed.
2. The photolithography development method according to claim 1, characterized in that: The photoresist layer does not contain a surfactant, and no pretreatment step is performed, and the step further includes: Obtaining a decomposition rate of the exposed photoresist layer in a developer; If the photoresist layer does not contain a surfactant and the decomposition rate is greater than a preset rate, the pretreatment is performed; If the photoresist layer does not contain a surfactant and the decomposition rate is not greater than a preset rate, the pretreatment is not performed.
3. The photolithography development method according to claim 2, characterized in that: Before the step of obtaining the decomposition rate of the exposed photoresist layer in the developer, the method further comprises: Obtaining the initial thickness of the exposed photoresist layer; Spraying the developer on the exposed photoresist layer; Acquire the current thickness and reaction time of the exposed photoresist layer; The decomposition rate is obtained according to the initial thickness, the current thickness and the reaction time.
4. The photolithography development method according to claim 3, characterized in that: The step of obtaining the decomposition rate according to the initial thickness, the current thickness and the reaction time comprises: Calculating the difference between the initial thickness and the current thickness to obtain a reaction thickness; The decomposition rate is obtained by calculating the quotient of the reaction thickness and the reaction time.
5. The photolithography development method according to claim 1, characterized in that: The step of spraying a developer on the exposed photoresist layer and developing the layer comprises: Spraying the developer on the exposed photoresist layer on the stationary wafer; Controlling the wafer to rotate and spraying the developer on the exposed photoresist layer; After a preset time, the exposed photoresist layer is rinsed and dried to complete the development.
6. The photolithography development method according to claim 1, characterized in that: The developer is tetramethylammonium hydroxide developer, and the photoresist layer is a positive photoresist.
7. The photolithography development method according to claim 1, characterized in that: The wetting treatment is to use deionized water to wet the surface of the photoresist layer.
8. The photolithography development method according to claim 1, characterized in that: If the pretreatment is not performed, the step of spraying the developer on the exposed photoresist layer and developing it includes: completing the development by adjusting the scanning path of the developer spray head, and / or the amount of developer, and / or the development time.
9. The photolithography development method according to claim 8, characterized in that: The step of completing the development by adjusting the scanning path of the developer nozzle, and / or the developer dosage, and / or the development time, comprises: The development is completed by adjusting the developer nozzle to a fan-shaped scanning path, and / or increasing the amount of developer, and / or increasing the development time.
10. A photolithography developing device, characterized in that: The device comprises: A wafer providing module is used to provide a wafer having an exposed photoresist layer on its surface; A judging module, used for judging whether the photoresist layer contains a surfactant. If the photoresist layer contains a surfactant, a pretreatment is performed, wherein the pretreatment includes wetting the photoresist layer before spraying a developer; if the photoresist layer does not contain a surfactant, no pretreatment is performed; The developing module is used for spraying a developing solution on the exposed photoresist layer and performing developing.