A hydrogen-terminated diamond / two-dimensional semiconductor monolithic integrated complementary device and a preparation method thereof

Abstract

The application discloses a hydrogen-terminated diamond / two-dimensional semiconductor monolithic integrated complementary device and a preparation method thereof. The device comprises a diamond substrate, a diamond epitaxial film, a hydrogen-terminated two-dimensional hole gas layer, a mesa isolation region, a two-dimensional semiconductor layer, a first source electrode, a first drain electrode, a second source electrode, a second drain electrode, a first gate dielectric layer, a second gate dielectric layer, a first gate electrode and a second gate electrode. The diamond-based semiconductor complementary device is prepared by combining the p-type hydrogen-terminated diamond and the n-type two-dimensional semiconductor together, monolithic integrated complementary devices on the diamond are realized, the technical difficulty that the n-type MOS device is difficult to be realized at present is effectively avoided, the respective advantages of the diamond and the two-dimensional material are fully exerted, and the high-performance diamond-based monolithic integrated CMOS device is realized.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of semiconductor devices, and particularly relates to a hydrogen-terminated diamond / two-dimensional semiconductor monolithic integrated complementary device and a preparation method thereof. BACKGROUND

[0002] At present, wide-bandgap semiconductor materials represented by diamond have high critical breakdown electric field, and can realize lower capacitance and on-resistance at the same breakdown voltage, which is the core material supporting the innovation development and transformation and upgrading of the industries of power electronics, 5G mobile communication (5th Generation Mobile Communication Technology), new energy vehicles, etc.

[0003] The band gap of diamond is as large as 5.47 eV, the breakdown field strength is as high as 10 MV / cm, the carrier mobility is high, the electron is 4500 cm 2 / V·s, the hole is 3800 cm 2 / V·s, the thermal conductivity is as high as 22 W / (cm·K), and the Baliga merit is extremely high, which is more suitable for preparing ultra-high power and ultra-high frequency electronic devices and applying them in relatively harsh environments. It is found that a two-dimensional hole gas 2DHG layer is formed on the surface of hydrogen-terminated diamond treated by hydrogen plasma and exposed in air for a period of time, which exhibits p-type conduction, and the hole concentration is generally 10 12 cm -2 ~10 14 cm -2 , the surface hole mobility is in the range of 20 cm 2 ·V -1 ·s -1 ~680 cm 2 ·V -1 ·s -1 , and therefore can be used to prepare high-performance p-type field effect transistors. As an important component in logic circuit applications, the design of CMOS inverters (Complementary Metal-Oxide-Semiconductor) has always been a research hotspot. In applications, CMOS inverters have the advantages of small static power consumption, large output swing and strong anti-interference ability. However, at present, due to technical limitations, n-type doping of diamond material has not yet reached the requirements for electronic devices, and therefore it is impossible to realize CMOS devices made of all-diamond materials. SUMMARY

[0004] The present application aims to provide a hydrogen-terminated diamond / two-dimensional semiconductor monolithic integrated complementary device and a preparation method, solve the problem that the existing diamond is difficult to realize an n-type MOS device, realize a p-type conductive channel and an n-type conductive channel enhancement mode transistor by using a two-dimensional hole gas channel of a hydrogen-terminated surface and a two-dimensional semiconductor material, and thus realize a monolithic integrated complementary device on the diamond.

[0005] In order to achieve the above-mentioned purpose, the technical scheme of the present application is as follows:

[0006] One of the purposes of the present application is to provide a hydrogen-terminated diamond / two-dimensional semiconductor monolithic integrated complementary device, which comprises:

[0007] A diamond substrate, an upper surface of which is provided with a diamond epitaxial film layer, an upper surface of the diamond epitaxial film layer is provided with a hydrogen-terminated two-dimensional hole gas layer, and an upper surface of the diamond epitaxial film layer located outside the hydrogen-terminated two-dimensional hole gas layer is further provided with a mesa isolation region; second source and drain electrodes are respectively arranged at both ends of an upper surface of the hydrogen-terminated two-dimensional hole gas layer, a second gate electrode is arranged on the hydrogen-terminated two-dimensional hole gas layer, and the second gate electrode is located between the second source and drain electrodes.

[0008] A two-dimensional semiconductor layer is arranged on an upper surface of the mesa isolation region and located on one side of the hydrogen-terminated two-dimensional hole gas layer, first source and drain electrodes are respectively arranged at both ends of an upper surface of the two-dimensional semiconductor layer, and a first gate electrode is arranged on an upper surface of the two-dimensional semiconductor layer between the first source and drain electrodes.

[0009] The first drain electrode and the second drain electrode are metal-interconnected, and the first gate electrode and the second gate electrode are metal-interconnected to form a complementary device.

[0010] It should be noted that a part of the second source electrode and the second drain electrode is located on the upper surface of the hydrogen-terminated two-dimensional hole gas layer to form an ohmic contact, and another part is located on the mesa isolation region.

[0011] Further, the second gate dielectric layer is in contact with the second source electrode and the second drain electrode, the second gate electrode is located between the second source electrode and the second drain electrode and is not in contact with the second source electrode and the second drain electrode.

[0012] Further, the first gate dielectric layer is in contact with the first source electrode and the first drain electrode, and the first gate electrode is not in contact with the first source electrode and the first drain electrode.

[0013] Further, the hydrogen-terminated diamond / two-dimensional semiconductor monolithic integrated complementary device, the thickness of the diamond epitaxial thin film layer is 1nm-100μm, the resistivity is greater than or equal to 100MΩ·cm, the root mean square surface roughness is less than or equal to 0.5nm, and the Raman curve half peak width is less than or equal to 2cm -1 -1.

[0014] Further, the hydrogen-terminated diamond / two-dimensional semiconductor monolithic integrated complementary device, the p-type conductive channel inner surface carrier concentration of the hydrogen-terminated two-dimensional hole gas layer is 1×10 12 cm -2 -5×10 14 cm -2 , the mobility is 20cm 2 / V·s-2500cm 2 / V·s, and the thickness of the hydrogen-terminated two-dimensional hole gas layer is 1nm-20nm.

[0015] Further, the hydrogen-terminated diamond / two-dimensional semiconductor monolithic integrated complementary device, the n-type conductive channel length of the two-dimensional semiconductor layer is 5nm-100μm, and the thickness is 1-8nm, wherein the distance between the first source electrode and the first drain electrode is the n-type conductive channel length; the n-type conductive channel inner surface carrier concentration is 1×10 12 cm -2 -5×10 14 cm -2 , and the mobility is 1cm 2 / V·s-20000cm 2 / V·s.

[0016] Further, the hydrogen-terminated diamond / two-dimensional semiconductor monolithic integrated complementary device, the two-dimensional semiconductor layer is graphene, MoS2, ReS2, WS2 or WSe2.

[0017] Further, the hydrogen-terminated diamond / two-dimensional semiconductor monolithic integrated complementary device, the thickness of the first gate dielectric layer and the second gate dielectric layer is 0nm-500nm, and the material of the first gate dielectric layer and the second gate dielectric layer is SiO2, SiN x , HfO2, Al2O3 or ZrO2, and the first gate dielectric layer and the second gate dielectric layer can also be absent.

[0018] When the first gate dielectric layer and the second gate dielectric layer exist, the second gate dielectric layer is arranged on the hydrogen-terminated two-dimensional hole gas layer, the second gate dielectric layer is located between the second source electrode and the second drain electrode, and the second gate electrode is arranged on the second gate dielectric layer.

[0019] The upper surface of the two-dimensional semiconductor layer located between the first source electrode and the first drain electrode is provided with the first gate dielectric layer, and the first gate electrode is arranged on the first gate dielectric layer.

[0020] Further, the thickness of the first source electrode, the first drain electrode, the second source electrode, the second drain electrode, the first gate electrode and the second gate electrode of the hydrogen-terminated diamond / two-dimensional semiconductor monolithic integrated complementary device is 10 nm to 500 nm.

[0021] The second object of the present application is to provide a preparation method of the hydrogen-terminated diamond / two-dimensional semiconductor monolithic integrated complementary device, comprising the following steps:

[0022] A diamond substrate is provided as a base;

[0023] A diamond epitaxial thin film layer is deposited on the surface of the diamond substrate;

[0024] The surface of the diamond epitaxial thin film layer is subjected to hydrogenation treatment to obtain a two-dimensional hole gas layer;

[0025] A mask is used to cover part of the two-dimensional hole gas layer, and the rest of the two-dimensional hole gas layer is etched, the area covered by the mask forms a hydrogen-terminated two-dimensional hole gas layer, which is used as a p-type conductive channel region, and the etched area forms a mesa isolation region;

[0026] A deposition protection layer is formed on the surface of the hydrogen-terminated two-dimensional hole gas layer;

[0027] A two-dimensional semiconductor material is transferred to the surface of the mesa isolation region and the protection layer;

[0028] A mask is used to cover part of the two-dimensional semiconductor material, part of the two-dimensional semiconductor material is used as an n-type conductive channel region, and the two-dimensional semiconductor material in the non-n-type conductive channel region is etched and removed to form a two-dimensional semiconductor layer;

[0029] First source electrodes and first drain electrodes ohmic contacts are respectively formed at both ends of the two-dimensional semiconductor layer, and second source electrodes and second drain electrodes ohmic contacts are respectively formed at both ends of the hydrogen-terminated two-dimensional hole gas layer;

[0030] A first gate dielectric layer is formed on the upper surface of the two-dimensional semiconductor layer, and a second gate dielectric layer is formed on the upper surface of the hydrogen-terminated two-dimensional hole gas layer;

[0031] forming a first gate electrode on the upper surface of the first gate dielectric layer and a second gate electrode on the upper surface of the second gate dielectric layer;

[0032] metallically interconnecting the first and second drain electrodes and the first and second gate electrodes to form a complementary device in which the hydrogen-terminated two-dimensional hole gas layer acts as a p-type conductive channel and the two-dimensional semiconductor layer acts as an n-type conductive channel, and in which the charge carriers migrate within the p-type and n-type conductive channels.

[0033] Further, the hydrogenation treatment is performed by placing the sample in a hydrogen plasma or hydrogen atmosphere at 500-900 DEG C for 10-2 hours, the hydrogen flow rate in the hydrogen plasma or hydrogen atmosphere being 50-1000 sccm, and the charge carrier concentration of the two-dimensional hole gas layer after the hydrogenation treatment being 1*10 12 cm -2 ~5*10 14 cm -2 , the mobility being 20 cm 2 / V*s~2500 cm 2 / V*s.

[0034] Further, the power during the oxygen plasma etching process is 30-300 W, and the rate is 1-1000 nm / min; and the protective layer is a metal or dielectric material layer.

[0035] Further, the mask material during the mask covering process is photoresist, metal or dielectric material.

[0036] Compared with the prior art, the present application has the following beneficial effects:

[0037] The complementary device provided by the present application has the hydrogen-terminated two-dimensional hole gas layer as a p-type conductive channel and the two-dimensional semiconductor as an n-type conductive channel, and the charge carriers migrate within the two channels; the diamond-based semiconductor complementary device is prepared by combining the p-type hydrogen-terminated diamond and the n-type two-dimensional semiconductor together, effectively avoiding the technical difficulty that the n-type MOS device (Metal-Oxide-Semiconductor Field-Effect Transistor) cannot be realized by using diamond at present, fully exerting the respective advantages of diamond and two-dimensional material, and realizing a high-performance diamond-based monolithic integrated CMOS device; the diamond and two-dimensional semiconductor have high charge carrier mobility, monolithic integration reduces the distance between devices, and ensures that the CMOS device has high switching speed and low loss; the diamond has high thermal conductivity and strong radiation resistance, reduces the junction temperature of the device, and ensures that the CMOS device can be applied to a high-performance ultra-wide bandgap semiconductor complementary device in a high-temperature and high-radiation environment, and confirms that diamond has great potential in the application of integrated circuits. BRIEF DESCRIPTION OF DRAWINGS

[0038] Figure 1 Structure diagram of the complementary device of the present application;

[0039] Figure 2 Flow diagram of the preparation method of the complementary device of the present application embodiment 1 and embodiment 2;

[0040] Figure 3 Top view of the complementary device of the present application;

[0041] Explanation of the reference signs:

[0042] 1, diamond substrate, 2, diamond epitaxial film layer, 3, hydrogen-terminated two-dimensional hole gas layer, 4, mesa isolation region, 5, two-dimensional semiconductor layer, 6, first source electrode, 7, first drain electrode, 8, second source electrode, 9, second drain electrode, 10, first gate dielectric layer, 11, second gate dielectric layer, 12, first gate electrode, 13, second gate electrode, 14, first interconnection line, 15, second interconnection line. DETAILED DESCRIPTION

[0043] In order to enable the technical personnel in the art to better understand the technical solutions of the present application and to implement them, the present application will be further described below in conjunction with specific embodiments and drawings. The described embodiments are only a part of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by the ordinary skilled in the art without making creative efforts are within the scope of protection of the present application.

[0044] The present application provides a hydrogen-terminated diamond / two-dimensional semiconductor monolithic integrated complementary device, comprising:

[0045] A diamond substrate 1, the upper surface of which is provided with a diamond epitaxial film layer 2, the upper surface of the diamond epitaxial film layer 2 is provided with a hydrogen-terminated two-dimensional hole gas layer 3, and the upper surface of the diamond epitaxial film layer 2 outside the hydrogen-terminated two-dimensional hole gas layer 3 is further provided with a mesa isolation region 4; the upper surface of the hydrogen-terminated two-dimensional hole gas layer 3 is respectively provided with a second source electrode 8 and a second drain electrode 9 at both ends, and the hydrogen-terminated two-dimensional hole gas layer 3 is provided with a second gate electrode 13, which is located between the second source electrode 8 and the second drain electrode 9;

[0046] A two-dimensional semiconductor layer 5 is arranged on the upper surface of the mesa isolation region 4 and located on one side of the hydrogen-terminated two-dimensional hole gas layer 3, the upper surface of the two-dimensional semiconductor layer 5 is respectively provided with a first source electrode 6 and a first drain electrode 7 at both ends, and the upper surface of the two-dimensional semiconductor layer 5 between the first source electrode 6 and the first drain electrode 7 is provided with a first gate electrode 12;

[0047] The first drain electrode 7 and the second drain electrode 9 are metal interconnected, and the first gate electrode 12 and the second gate electrode 13 are metal interconnected, forming a complementary device.

[0048] The problem that the prior art cannot realize the CMOS device of full diamond material is solved.

[0049] Based on the same inventive concept, the application provides a hydrogen-terminated diamond / two-dimensional semiconductor monolithic integrated complementary device, as shown in Figure 1 and Figure 3 The hydrogen-terminated diamond / two-dimensional semiconductor monolithic integrated complementary device comprises a diamond substrate 1, a diamond epitaxial film 2, a hydrogen-terminated two-dimensional hole gas 3, a mesa isolation region 4, a two-dimensional semiconductor layer 5, a first source electrode 6, a first drain electrode 7, a second source electrode 8, a second drain electrode 9, a first gate dielectric layer 10, a second gate dielectric layer 11, a first gate electrode 12, and a second gate electrode 13. The upper surface of the diamond substrate 1 is provided with the diamond epitaxial film layer 2, the upper surface of the diamond epitaxial film layer 2 is provided with the hydrogen-terminated two-dimensional hole gas layer 3, the upper surface of the diamond epitaxial film layer 2 outside the hydrogen-terminated two-dimensional hole gas layer 3 is further provided with the mesa isolation region 4, the upper surface of the hydrogen-terminated two-dimensional hole gas layer 3 is respectively provided with the second source electrode 8 and the second drain electrode 9 at both ends, the hydrogen-terminated two-dimensional hole gas layer 3 is provided with the second gate dielectric layer 11, the second gate dielectric layer 11 is located between the second source electrode 8 and the second drain electrode 9, and the second gate dielectric layer 11 is provided with the second gate electrode 13. The two-dimensional semiconductor layer 5 is arranged on the upper surface of the mesa isolation region 4 and located on one side of the hydrogen-terminated two-dimensional hole gas layer 3, the upper surface of the two-dimensional semiconductor layer 5 is respectively provided with the first source electrode 6 and the first drain electrode 7 at both ends, the upper surface of the two-dimensional semiconductor layer 5 is further provided with the first gate dielectric layer 10 between the first source electrode 6 and the first drain electrode 7, and the first gate dielectric layer 10 is provided with the first gate electrode 12. The first drain electrode 7 and the second drain electrode 9 are metal interconnected, and the first gate electrode 12 and the second gate electrode 13 are metal interconnected, forming a complementary device.

[0050] Part of the second source electrode 8 and the second drain electrode 9 is located on the upper surface of the hydrogen-terminated two-dimensional hole gas layer 3 to form an ohmic contact, and the other part is located on the mesa isolation region 4.

[0051] Further, the second gate dielectric layer 11 contacts the second source electrode 8 and the second drain electrode 9, and the second gate electrode 13 is located between the second source electrode 8 and the second drain electrode 9 and does not contact the second source electrode 8 and the second drain electrode 9.

[0052] Further, the first gate dielectric layer 10 contacts the first source electrode 6 and the first drain electrode 7, and the first gate electrode 12 does not contact the first source electrode 6 and the first drain electrode 7.

[0053] In the present application, the diamond substrate 1 is a homo- or hetero-epitaxial diamond substrate prepared by high pressure high temperature (HPHT) technology or chemical vapor deposition (CVD) technology to ensure that a pure diamond substrate 1 can be obtained; the diamond epitaxial film 2 is a chemical vapor deposition grown diamond material, and the two-dimensional semiconductor layer 5 and the hydrogen-terminated two-dimensional hole gas layer 3 are not in contact with each other through the mesa isolation region 4. The first drain electrode 7 and the second drain electrode 9 are metal interconnected by the first interconnection line 14, and the first gate electrode 12 and the second gate electrode 13 are metal interconnected by the second interconnection line 15 to form a complementary device. In the complementary device, the hydrogen-terminated two-dimensional hole gas layer 3 serves as a p-type conductive channel, and the two-dimensional semiconductor layer 5 serves as an n-type conductive channel. Carriers migrate in the two channels, and the hydrogen-terminated surface two-dimensional hole gas layer and the two-dimensional semiconductor material are used to realize a p-type conductive channel and an n-type conductive channel enhanced transistor, respectively, so as to realize a monolithic integrated complementary device on diamond. The technical difficulties in realizing an n-type MOS device on diamond are effectively avoided, the advantages of diamond and two-dimensional materials are fully utilized, and a high-performance diamond-based monolithic integrated CMOS device is realized. Diamond and two-dimensional semiconductor have high carrier mobility, monolithic integration reduces the distance between devices, and ensures that the CMOS device has high switching speed and low loss. Diamond has high thermal conductivity and strong radiation resistance, which reduces the junction temperature of the device and ensures that the CMOS device can be applied to high-temperature and strong-radiation environment applications. High-performance ultra-wide bandgap semiconductor complementary devices confirm that diamond has great potential in the application of integrated circuits.

[0054] In specific embodiments, the thickness of the diamond epitaxial film layer 2 is 1 nm to 100 μm, the resistivity is greater than or equal to 100 MΩ·cm, the root mean square surface roughness is less than or equal to 0.5 nm, and the Raman curve half-peak width is less than or equal to 2 cm -1 , and the XRD rocking curve half-peak width is less than or equal to 30 arcsec.

[0055] In specific embodiments, the carrier concentration in the p-type conductive channel of the hydrogen-terminated two-dimensional hole gas layer 3 is 1×10 12 cm -2 ~5×10 14 cm -2 , and the mobility is 20 cm 2 / V·s~2500 cm 2The thickness of the hydrogen-terminated two-dimensional hole gas layer 3 is 1 nm-20 nm. During the hydrogenation process of the diamond epitaxial film layer 2, the hydrogen plasma or hydrogen gas reacts with the carbon on the surface of the single-crystal diamond film, and then the carbon layer on the surface of the single-crystal diamond film is converted into a carbon-hydrogen terminal layer, that is, a two-dimensional hole gas layer is formed in situ on the surface of the single-crystal diamond film. The hydrogenation process is to place the diamond sample in a hydrogen plasma or hydrogen gas atmosphere, the treatment temperature is 500-900 DEG C, the hydrogen flow in the hydrogen plasma or hydrogen gas atmosphere is 50-1000 sccm, the treatment time is 10 s-2 h, a two-dimensional hole gas layer is formed, and the size of the hydrogen-terminated region actually required is used to cover part of the two-dimensional hole gas layer with a mask, and the rest of the two-dimensional hole gas layer is etched by oxygen plasma to form a mesa isolation region 4. The area covered by the mask forms a hydrogen-terminated two-dimensional hole gas layer 3, and the mesa isolation region 4 serves as an insulating layer to achieve electrical isolation between devices.

[0056] In specific embodiments, the n-type conductive channel length of the two-dimensional semiconductor layer 5 is 5 nm-100 μm, the thickness is 1 nm-8 nm, the material of the semiconductor layer includes but is not limited to graphene, MoS2, ReS2, WS2 or WSe2, etc., the surface carrier concentration in the n-type conductive channel is 1 x 10 12 cm -2 -5 x 10 14 cm -2 , and the mobility is 1-20000 cm 2 / V·s.

[0057] In specific embodiments, the thickness of the first gate dielectric layer 10 and the second gate dielectric layer 11 is 0 nm-500 nm, and the material of the first gate dielectric layer 10 and the second gate dielectric layer 11 includes but is not limited to SiO2, SiN x , HfO2, Al2O3 or ZrO2, etc.

[0058] In specific embodiments, the thickness of the first source electrode 6, the first drain electrode 7, the second source electrode 8, the second drain electrode 9, the first gate electrode 12 and the second gate electrode 13 is 10 nm-500 nm, the material of the first source electrode 6, the first drain electrode 7, the second source electrode 8 and the second drain electrode 9 includes but is not limited to Au, Pd, Ir, Pt or Ti, and the material of the first gate electrode 12 and the second gate electrode 13 includes but is not limited to Al, Zr, Hf or Mo, etc.

[0059] The above-mentioned method for preparing a complementary device of a hydrogen-terminated diamond / two-dimensional semiconductor monolithic integrated device includes the following steps:

[0060] A diamond substrate 1 is provided as a base, and the diamond substrate 1 is cleaned and dried.

[0061] Depositing a diamond epitaxial film layer 2 on the surface of the diamond substrate 1, as follows:

[0062] Forming a diamond epitaxial film layer 2 on the diamond substrate 1 by chemical vapor deposition, the thickness of the diamond epitaxial film layer 2 being 1 nm to 100 μm, the resistivity being greater than or equal to 100 MΩ·cm, the root mean square surface roughness being less than or equal to 0.5 nm, and the Raman curve half-peak width being less than or equal to 2 cm -1 -1

[0063] Hydrogenating the surface of the diamond epitaxial film layer 2 to obtain a two-dimensional hole gas layer, as follows:

[0064] Placing the diamond substrate 1 on which the diamond epitaxial film layer 2 is deposited in a hydrogen plasma or a hydrogen atmosphere to perform hydrogenation treatment, the hydrogenation treatment temperature being 500℃ to 900℃, the time being 10 s to 2 h, the hydrogen flow rate in the hydrogen plasma or the hydrogen atmosphere being 50 to 1000 sccm, to obtain a two-dimensional hole gas layer, the thickness of the two-dimensional hole gas layer being 1 to 20 nm, the carrier concentration being 1×10 12 cm -2 -5×10 14 cm -2 -2, and the mobility being 20 cm 2 / V·s-2500 cm 2 / V·s.

[0065] Covering part of the two-dimensional hole gas layer with a mask using photolithography technology, and performing oxygen plasma etching on the rest of the two-dimensional hole gas layer, the area covered by the mask forming a hydrogen-terminated two-dimensional hole gas layer 3 as a p-type conductive channel region, and the etched area forming a mesa isolation region 4;

[0066] Depositing a protective layer on the surface of the hydrogen-terminated two-dimensional hole gas layer 3; the deposition method includes but is not limited to chemical vapor deposition, electron beam evaporation deposition, etc., and the protective layer material is a metal or a dielectric material, including but not limited to Au, SiO2, Si3N4, etc.

[0067] Transferring the two-dimensional semiconductor material to the upper surface of the mesa isolation region 4 and the protective layer;

[0068] Transferring the two-dimensional semiconductor material to the upper surface of the entire sample, and the transfer method includes dry transfer, wet transfer, etc.

[0069] Photolithography is used to cover a portion of a two-dimensional semiconductor material with a mask. This portion of the two-dimensional semiconductor material serves as an n-type conductive channel region. Etching removes the non-n-type conductive channel region of the two-dimensional semiconductor material to form a two-dimensional semiconductor layer 5. The carrier concentration on the inner surface of the n-type conductive channel in the two-dimensional semiconductor layer 5 is 1 × 10⁻⁶. 12 cm -2 ~5×10 14 cm -2 The migration rate is 1cm. 2 / V·s~20000cm 2 / V·s; When the protective layer is metallic, it is not necessary to remove the protective layer deposited on the hydrogen terminal two-dimensional hole gas layer 3; when the protective layer is a dielectric material, the protective layer deposited on the hydrogen terminal two-dimensional hole gas layer 3 is removed. It should be noted that, in order to ensure that the protective layer can be removed, in some feasible embodiments of the present invention, I2 / KI solution, BOE (Buffered Oxide Etch), or hydrofluoric acid immersion is used for removal;

[0070] A first source electrode 6 and a first drain electrode 7 ohmic contacts are formed at both ends of the two-dimensional semiconductor layer 5, and a second source electrode 8 and a second drain electrode 9 ohmic contacts are formed at both ends of the hydrogen terminal two-dimensional hole gas layer 3.

[0071] A first gate dielectric layer 10 and a second gate dielectric layer 11 are formed on the upper surface of the two-dimensional semiconductor material 5 and the upper surface of the hydrogen-terminated two-dimensional cavitation gas 3, respectively.

[0072] A first gate electrode 12 and a second gate electrode 13 are formed on the upper surface of the first gate dielectric layer 10 and the upper surface of the second gate dielectric layer 11, respectively.

[0073] The first drain electrode 7 and the second drain electrode 9 are interconnected using photolithography and deposition techniques, and the first gate electrode 12 and the second gate electrode 13 are interconnected to form a complementary device; for example Figure 3 As shown, in the complementary device, the first drain electrode 7 and the second drain electrode 9 are interconnected by the first interconnect line 14 as the output electrode of the complementary device. The first gate electrode 12 and the second gate electrode 13 are interconnected by the second interconnect line 15 as the input electrode of the complementary device. The first source electrode 6 is grounded and the second source electrode 8 is connected to the power supply voltage. By combining p-type hydrogen-terminated diamond and n-type two-dimensional semiconductor to prepare diamond-based semiconductor complementary devices, the technical difficulties of realizing n-type MOS devices with diamond are effectively avoided. The advantages of diamond and two-dimensional materials are fully utilized, and high-performance diamond-based monolithic integrated CMOS devices are realized.

[0074] In the present application, the deposition method includes plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), atomic layer deposition (ALD), electron beam evaporation, sputtering, etc., and the photolithography technology includes ultraviolet photolithography, electron beam photolithography, and step-by-step non-contact photolithography, etc.

[0075] The following is further illustrated by specific examples.

[0076] Example 1

[0077] The preparation method of a complementary device of hydrogen-terminated diamond / two-dimensional semiconductor monolithic integration, see Figure 2 , comprising the following steps:

[0078] Step 1: The diamond substrate 1 grown by high temperature and high pressure technology is subjected to inorganic and organic cleaning successively using a standard cleaning process for diamond substrate, and is dried with nitrogen for standby, wherein the high temperature and high pressure technology is a conventional process as long as it can form the diamond substrate 1, and the present application will not be further described;

[0079] Step 2: A single crystal diamond epitaxial film layer 2 is deposited on the cleaned diamond substrate using a microwave plasma chemical vapor deposition (MPCVD) technology, the plasma power is 1 kW, the chamber pressure is 100 Torr, and the total gas flow is 500 sccm, so that the single crystal diamond film with a thickness of 1 μm, a resistivity of 100 MΩ·cm, a root mean square surface roughness of 0.5 nm, and a Raman curve half-peak width of 2 cm -1 -1 is obtained, and the XRD rocking curve half-peak width is 30 arcsec;

[0080] Step 3: The microwave plasma power is controlled so that the chamber temperature is 900℃, the hydrogen flow is kept at 50 sccm, and the grown single crystal diamond epitaxial film 2 is subjected to hydrogenation treatment, the treatment time is 5 min, and a two-dimensional hole gas layer is obtained, the two-dimensional hole gas layer surface density, i.e., the carrier concentration of the two-dimensional hole gas layer after hydrogenation treatment, is 2×10 13 cm -2 -2, and the mobility is 150 cm 2 / V·s;

[0081] Step 4, ultrasonic cleaning the sample obtained in step 3 using acetone, isopropyl alcohol, deionized water, and blowing dry; spin coating a layer of AZ5214 photoresist on the surface of the two-dimensional hole gas layer, baking the sample with spin-coated photoresist at 90°C for 90s to remove the photoresist solvent, exposing to ultraviolet light for 5s using a designed mask according to the device performance requirements, developing for 60s, so that the photoresist covers only part of the two-dimensional hole gas layer, the area covered by the mask forms a hydrogen-terminated two-dimensional hole gas layer 3 as a p-type conductive channel region, and the area not covered by the mask forms a mesa isolation region 4 using oxygen plasma etching, the p-type conductive channel of the hydrogen-terminated two-dimensional hole gas layer 3 has a carrier concentration of 2x10 13 cm -2 and a mobility of 150 cm 2 / V·s, and finally removing the photoresist on the surface of the sample using acetone;

[0082] Step 5, spin coating a layer of AZ5214 photoresist on the upper surface of the sample obtained in step 4, baking the single crystal diamond sample with spin-coated photoresist at 90°C for 90s to remove the photoresist solvent, exposing to ultraviolet light for 5s using a designed mask according to the device performance requirements, developing for 60s to expose the hydrogen-terminated two-dimensional hole gas layer 3; depositing 150nm thick Au using electron beam evaporation physical vapor deposition method, with a base vacuum degree of 5x10 -4 Pa, and obtaining a protective layer of Au on the hydrogen-terminated two-dimensional hole gas layer 3 after peeling off;

[0083] Step 6, dry transfer of the two-dimensional semiconductor layer 5: after taking MoS2 material with PDMS, placing the PDMS / MoS2 composite on the sample obtained in step 5, and cleaning with acetone to remove PDMS, completing the material transfer;

[0084] Step 7, spin coating a layer of AZ5214 photoresist on the upper surface of the sample obtained in step 6, baking the sample with spin-coated photoresist at 90°C for 90s to remove the photoresist solvent, exposing to ultraviolet light for 5s using a designed mask according to the device performance requirements, developing for 60s, depositing 150nm thick Au using electron beam evaporation physical vapor deposition method, with a base vacuum degree of 5x10 -4 Pa, and obtaining an Au mask pattern after peeling off; then placing the sample in an etching machine to remove the two-dimensional semiconductor material in the non-n-type conductive channel region, and only retaining the two-dimensional semiconductor material in the n-type conductive channel region, forming a two-dimensional semiconductor layer 5;

[0085] Step 8, spin a layer of AZ5214 photoresist on the upper surface of the sample obtained in step 7, bake the photoresist-coated sample at 90°C for 90s to remove the photoresist solvent, expose to ultraviolet light for 5s using a designed mask according to the device performance requirements, develop for 60s, and etch the Au layer at the position of the dielectric layer using a KI / I2 aqueous solution to obtain the first source electrode 6 and the first drain electrode 7 ohmic contact, as well as the second source electrode 8 and the second drain electrode 9 ohmic contact;

[0086] Step 9, using the sample obtained in step 8, deposit 100nm of HfO2 on the position of the gate dielectric layer using electron beam evaporation, with a base vacuum of 5x10 -4 Pa; remove the deposited diamond sample and soak it in an acetone solution for 5min, and after peeling, the designed first gate dielectric layer 10 and second gate dielectric layer 11 are obtained;

[0087] Step 10, spin a layer of AZ5214 photoresist on the upper surface of the sample obtained in step 9, bake the single crystal diamond sample coated with photoresist at 90°C for 90s to remove the photoresist solvent, expose to ultraviolet light for 5s using a designed mask according to the device performance requirements, develop for 60s to leave the first gate electrode and second gate electrode pattern; place the patterned sample in an electron beam evaporation device and deposit 150nm thick Al on the surface of the sample, and after peeling, the first gate electrode 12 and second gate electrode 13 are obtained;

[0088] Step 11, deposit Al metal interconnection lines to achieve metal interconnection of the first drain electrode 7 and the second drain electrode 9 through the first interconnection line 14, and metal interconnection of the first gate electrode 12 and the second gate electrode 13 through the second interconnection line 15, and finally obtain a hydrogen-terminated diamond / MoS2 monolithic integrated complementary device.

[0089] Example 2

[0090] The method for preparing a hydrogen-terminated diamond / two-dimensional semiconductor monolithic integrated complementary device also refers to Figure 2 , comprising the following steps:

[0091] Step 1, use a standard cleaning process for diamond substrates to clean the high-temperature high-pressure technology grown diamond substrate 1 with inorganic and organic cleaning, and dry it with nitrogen gas for standby, the high-temperature high-pressure technology is a conventional process, as long as it can form a diamond substrate 1, and the present application does not make further description;

[0092] Step 2, a single crystal diamond epitaxial film layer 2 is deposited on the cleaned diamond substrate by using a microwave plasma vapor deposition technology, a plasma power is 1.2 kW, a chamber pressure is 100 Torr, and a total gas flow is 500 sccm, a thickness of the single crystal diamond film is 2 μm, a resistivity is 120 MΩ·cm, a root mean square surface roughness is 0.4 nm, and a Raman curve half-peak width is 1.9 cm -1 ;

[0093] Step 3, a microwave plasma power is controlled to make a chamber temperature be 700 ℃, a hydrogen flow is kept to be 100 sccm, and a hydrogenation treatment is performed on the grown single crystal diamond epitaxial film 2, a treatment time is 20 min, a two-dimensional hole gas layer is obtained, a two-dimensional hole gas layer surface density is 1×10 13 cm -2 , and a mobility is 180 cm 2 / V·s;

[0094] Step 4, the sample obtained in step 3 is ultrasonically cleaned by using acetone, isopropyl alcohol and deionized water, and is blown dry, a layer of RN246 photoresist is spin-coated on the surface of the two-dimensional hole gas layer, the sample with the spin-coated photoresist is baked at 100 ℃ for 90 s to remove the photoresist solvent, a designed mask is used for ultraviolet photoetching exposure for 5.5 s according to the device performance requirement, post-baking is performed at 103 ℃ for 100 s, and developing is performed for 80 s, so that the photoresist covers only part of the two-dimensional hole gas layer, a hydrogen-terminated two-dimensional hole gas layer 3 covered by the mask forms a p-type conductive channel region, an oxygen plasma etching is used to form a mesa isolation region 4 in the region not covered by the mask, an inner surface carrier concentration of the p-type conductive channel of the hydrogen-terminated two-dimensional hole gas layer 3 is 1×10 13 cm -2 , the mobility is 180 cm 2 / V·s, and finally, the photoresist on the surface of the sample is removed by using acetone;

[0095] Step 5, a layer of RN246 photoresist is spin-coated on the upper surface of the sample obtained in step 4, the sample with the spin-coated photoresist is baked at 100 ℃ for 90 s to remove the photoresist solvent, a designed mask is used for ultraviolet photoetching exposure for 5.5 s according to the device performance requirement, post-baking is performed at 103 ℃ for 100 s, and developing is performed for 80 s to expose the hydrogen-terminated two-dimensional hole gas layer 3; an Au with a thickness of 150 nm is deposited by using an electron beam evaporation physical vapor deposition method (EB-PVD), a base vacuum degree is 5×10 -4 Pa, and a protective layer Au on the p-type conductive channel region is obtained after peeling off;

[0096] Step 6: Two-dimensional semiconductor layer 5 is prepared by wet transfer: first, a PMMA film is spin-coated on the ReS2 surface grown on the metal substrate, heated to solidify, then the metal substrate is etched, then dried, and the ReS2 / PMMA composite is placed on the sample obtained in step 5 using a diamond, and the PMMA is removed by washing with acetone, i.e. the transfer step is completed;

[0097] Step 7: A layer of RN246 photoresist is spin-coated on the upper surface of the sample obtained in step 6, the sample with spin-coated photoresist is baked at 100°C for 90s to remove the photoresist solvent, and according to the device performance requirements, a designed mask is used for UV lithography exposure for 5.5s, post-baking at 103°C for 100s, and development for 80s, then 100nm thick SiO2 is deposited by electron beam evaporation physical vapor deposition, with a base vacuum of 5x10 -4 Pa, and after peeling, the SiO2 mask pattern is obtained; then the sample is placed in an etching machine to etch and remove the two-dimensional semiconductor material in the non-n-type conductive channel region, leaving only the two-dimensional semiconductor material in the n-type conductive channel region, forming a two-dimensional semiconductor layer 5;

[0098] Step 8: A layer of RN246 photoresist is spin-coated on the upper surface of the sample obtained in step 7, the single crystal diamond sample with spin-coated photoresist is baked at 100°C for 90s to remove the photoresist solvent, and according to the device performance requirements, a designed mask is used for UV lithography exposure for 5.5s, post-baking at 103°C for 100s, and development for 80s, the SiO2 layer at both ends of the two-dimensional semiconductor material is removed using HF aqueous solution to obtain the pattern of the first source electrode and the first drain electrode, and 100nm of Au is deposited on the source and drain electrode pattern using electron beam evaporation, after peeling, the first source electrode 6 and the first drain electrode 7 ohmic contact are obtained, and the remaining SiO2 on the two-dimensional semiconductor layer 5 can be used as the first dielectric layer 10;

[0099] After obtaining the first dielectric layer 10, a layer of RN246 photoresist is spin-coated on the upper surface of the sample, the single crystal diamond sample with spin-coated photoresist is baked at 100°C for 90s to remove the photoresist solvent, and according to the device performance requirements, a designed mask is used for UV lithography exposure for 5.5s, post-baking at 103°C for 100s, and development for 80s, the Au layer at the dielectric layer position of the p-type device is etched using KI / I2 aqueous solution to obtain the second source electrode 8 and the second drain electrode 9 ohmic contact;

[0100] Step 9: 50nm thick ZrO2 is deposited on the position of the gate dielectric layer of the p-type device using electron beam evaporation, with a base vacuum of 5x10 -4 Pa; the deposited sample is removed and soaked in acetone solution for 5min, and after peeling, the designed second gate dielectric layer 11 is obtained;

[0101] Step 10, the sample obtained in step 10 is ultrasonically cleaned with acetone and deionized water, and dried by blowing; a layer of RN246 photoresist is spin-coated on the surface of the sample, the single crystal diamond sample with the spin-coated photoresist is baked at 100℃ for 90s to remove the photoresist solvent, and according to the performance requirements of the device, a designed mask is used for ultraviolet lithography exposure for 5.5s, post-baking at 103℃ for 100s, and developing for 80s to leave the gate electrode pattern, and 100nm of Al electrode is deposited by electron beam evaporation; the first gate electrode 12 and the second gate electrode 13 are obtained by peeling off;

[0102] Step 11, depositing Al metal interconnection lines to realize the interconnection of the first drain electrode 7 and the second drain electrode 9, and the interconnection of the first gate electrode 12 and the second gate electrode 13, and finally obtaining a hydrogen-terminated diamond / ReS2 monolithic integrated complementary device.

[0103] Example 3

[0104] The preparation method of the hydrogen-terminated diamond / two-dimensional semiconductor monolithic integrated complementary device comprises the following steps:

[0105] Step 1, using a standard cleaning process for diamond substrate, the diamond substrate 1 grown by vapor phase epitaxy deposition technology is first inorganic and then organic cleaned, and dried with nitrogen for standby, the vapor phase epitaxy deposition technology is a conventional process, as long as the diamond substrate 1 can be formed, and the present application will not be further described;

[0106] Step 2, using microwave plasma vapor phase chemical deposition technology, a single crystal diamond epitaxial film layer 2 is deposited on the cleaned diamond substrate, the plasma power is 1.2kW, the chamber pressure is 90Torr, and the total gas flow is 500sccm, the obtained single crystal diamond film thickness is 2μm, the resistivity is 100MΩ·cm, the root mean square surface roughness is 0.5nm, and the Raman curve half peak width is 2cm -1 , the XRD rocking curve half peak width is 40arcsec;

[0107] Step 3, control the microwave plasma power so that the chamber temperature is 800℃, keep the hydrogen flow at 100sccm, and hydrogenate the grown single crystal diamond epitaxial film 2, the treatment time is 10min, a two-dimensional hole gas layer is obtained, the two-dimensional hole gas layer surface density is 1×10 13 cm -2 , the mobility is 300cm 2 / V·s;

[0108] Step 4, ultrasonic cleaning the sample obtained in step 3 using acetone, isopropyl alcohol, deionized water, and blow-drying; spin-coating a layer of AZ5214 photoresist on the surface of the two-dimensional hole gas layer, baking the sample with spin-coated photoresist at 90°C for 90s to remove the photoresist solvent, using a designed mask to perform ultraviolet lithography exposure for 5s and development for 60s according to the device performance requirements, so that the photoresist covers only part of the two-dimensional hole gas layer, and the area covered by the mask forms a hydrogen-terminated two-dimensional hole gas layer 3 as a p-type conductive channel region, and the area not covered by the mask forms a mesa isolation region 4, the p-type conductive channel of the hydrogen-terminated two-dimensional hole gas layer 3 has a carrier concentration of 1 x 10 13 cm -2 and a mobility of 300 cm 2 / V·s, and finally removing the photoresist on the surface of the sample using acetone;

[0109] Step 5, spin-coating a layer of AZ5214 photoresist on the upper surface of the sample obtained in step 4, baking the single-crystal diamond sample with spin-coated photoresist at 90°C for 90s to remove the photoresist solvent, using a designed mask to perform ultraviolet lithography exposure for 5s and development for 60s according to the device performance requirements, exposing the hydrogen-terminated two-dimensional hole gas layer 3; depositing 150nm-thick Au using electron beam evaporation physical vapor deposition, with a base vacuum degree of 5 x 10 -4 Pa, and obtaining a protective layer of Au on the hydrogen-terminated two-dimensional hole gas layer 3 after peeling off;

[0110] Step 6, dry transfer of the two-dimensional semiconductor layer 5: after using PMMA to adhere the graphene material, placing the PMMA / graphene composite on the sample obtained in step 5, and cleaning and removing the PMMA using acetone, completing the material transfer;

[0111] Step 7, spin-coating a layer of AZ5214 photoresist on the upper surface of the sample obtained in step 6, baking the sample with spin-coated photoresist at 90°C for 90s, using a designed mask to perform ultraviolet lithography exposure for 5s and development for 60s, depositing 150nm-thick Au using electron beam evaporation physical vapor deposition, with a base vacuum degree of 5 x 10 -4 Pa, and obtaining an Au mask pattern after peeling off; then placing the sample in an etching machine to remove the two-dimensional semiconductor material in the non-n-type conductive channel region, and only retaining the two-dimensional semiconductor material in the n-type conductive channel region, forming a two-dimensional semiconductor layer 5;

[0112] Step 8, spin-coating a layer of AZ5214 photoresist on the upper surface of the sample obtained in step 7, baking the sample with the spin-coated photoresist at 90 DEG C for 90s to remove the photoresist solvent, using a designed mask to perform ultraviolet lithography exposure for 5s, developing for 60s, using KI / I2 aqueous solution to etch the Au layer at the position of the dielectric layer, to obtain the first source electrode 6 and the first drain electrode 7 ohmic contact, and the second source electrode 8 and the second drain electrode 9 ohmic contact;

[0113] Step 9, masking the sample obtained in step 8, using electron beam evaporation to deposit 500nm-thick Al on the position of the gate dielectric layer, the base vacuum degree is 5x10 -4 Pa; taking out the deposited diamond sample, soaking in an acetone solution for 5min, and obtaining the designed first gate electrode 12 and second gate electrode 13 after peeling off;

[0114] Step 10, depositing Al metal interconnection lines to realize the metal interconnection of the first drain electrode 7 and the second drain electrode 9 through the first interconnection line 14, and the metal interconnection of the first gate electrode 12 and the second gate electrode 13 through the second interconnection line 15, finally obtaining a hydrogen-terminated diamond / graphene monolithic integrated complementary device.

[0115] It should be noted that the connection relationship of the components not mentioned in the present application is defaulted to the prior art, since it does not involve the inventive point and is generally applied in the prior art, and therefore the structure connection relationship is not described in detail.

[0116] It should be noted that when the present application involves a numerical range, it should be understood that each numerical range has two endpoints and any number between the two endpoints can be selected, since the same steps and examples are adopted, in order to prevent repetition, the present application describes the preferred examples. Although the preferred embodiments of the present application have been described, those skilled in the art can make further changes and modifications to these embodiments once they know the basic inventive concept. Therefore, the appended claims are intended to include the preferred embodiments and all changes and modifications falling within the scope of the present application.

[0117] Obviously, those skilled in the art can make various modifications and variations to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application also intends to include these modifications and variations.

Claims

1. A complementary device monolithically integrated with hydrogen-terminated diamond / two-dimensional semiconductor, characterized in that, include: A diamond substrate (1) has a diamond epitaxial thin film layer (2) on its upper surface. A hydrogen terminal two-dimensional hole gas layer (3) is provided on the upper surface of the diamond epitaxial thin film layer (2). A mesa isolation region (4) is also provided on the upper surface of the diamond epitaxial thin film layer (2) located outside the hydrogen terminal two-dimensional hole gas layer (3). A second source electrode (8) and a second drain electrode (9) are respectively provided at both ends of the upper surface of the hydrogen terminal two-dimensional hole gas layer (3). A second gate electrode (13) is provided on the hydrogen terminal two-dimensional hole gas layer (3). The second gate electrode (13) is located between the second source electrode (8) and the second drain electrode (9). A two-dimensional semiconductor layer (5) is disposed on the upper surface of the mesa isolation region (4) and located on one side of the hydrogen terminal two-dimensional cavitation gas layer (3). A first source electrode (6) and a first drain electrode (7) are respectively provided at both ends of the upper surface of the two-dimensional semiconductor layer (5). A first gate electrode (12) is provided on the upper surface of the two-dimensional semiconductor layer (5) located between the first source electrode (6) and the first drain electrode (7). The first drain electrode (7) and the second drain electrode (9) are interconnected by metal, and the first gate electrode (12) and the second gate electrode (13) are interconnected by metal to form a complementary device.

2. The complementary device with hydrogen-terminated diamond / two-dimensional semiconductor monolithic integration according to claim 1, characterized in that, The diamond epitaxial thin film layer (2) has a thickness of 1 nm to 100 μm, a resistivity greater than or equal to 100 MΩ·cm, a root mean square surface roughness less than or equal to 0.5 nm, and a Raman curve half-width less than or equal to 2 cm. -1 The half-width of the XRD rocking curve is less than or equal to 30 arcsec.

3. The complementary device with hydrogen-terminated diamond / two-dimensional semiconductor monolithic integration according to claim 1, characterized in that, The carrier concentration inside the p-type conductive channel of the hydrogen terminal two-dimensional hole gas layer (3) is 1×10⁻⁶. 12 cm -2 ~5×10 14 cm -2 The migration rate is 20cm. 2 / V·s~2500cm 2 / V·s, the thickness of the hydrogen terminal two-dimensional cavitation gas layer (3) is 1nm~20nm.

4. The complementary device with hydrogen-terminated diamond / two-dimensional semiconductor monolithic integration according to claim 1, characterized in that, The two-dimensional semiconductor layer (5) has an n-type conductive channel with a length of 5 nm to 100 μm and a thickness of 1 nm to 8 nm. The carrier concentration on the inner surface of the n-type conductive channel is 1 × 10⁻⁶. 12 cm -2 ~5×10 14 cm -2 The migration rate is 1cm. 2 / V·s~20000cm 2 / V·s.

5. The complementary device with hydrogen-terminated diamond / two-dimensional semiconductor monolithic integration according to claim 1, characterized in that, The material of the two-dimensional semiconductor layer (5) is graphene, MoS2, ReS2, WS2 or WSe2.

6. The complementary device with hydrogen-terminated diamond / two-dimensional semiconductor monolithic integration according to claim 1, characterized in that, The thickness of the first source electrode (6), the first drain electrode (7), the second source electrode (8), the second drain electrode (9), the first gate electrode (12), and the second gate electrode (13) is 10 nm to 500 nm.

7. The complementary device with hydrogen-terminated diamond / two-dimensional semiconductor monolithic integration according to claim 1, characterized in that, It also includes a first gate dielectric layer (10) and a second gate dielectric layer (11), the thickness of which is less than or equal to 500 nm. The hydrogen terminal two-dimensional hole gas layer (3) is provided with a second gate dielectric layer (11), the second gate dielectric layer (11) is located between the second source electrode (8) and the second drain electrode (9), and the second gate electrode (13) is provided on the second gate dielectric layer (11); The upper surface of the two-dimensional semiconductor layer (5) located between the first source electrode (6) and the first drain electrode (7) is provided with the first gate dielectric layer (10), and the first gate electrode (12) is provided on the first gate dielectric layer (10).

8. A method for fabricating a complementary device using hydrogen-terminated diamond / two-dimensional semiconductor monolithic integration as described in claim 7, characterized in that, Includes the following steps: A diamond substrate (1) is provided as the base; A diamond epitaxial thin film layer (2) is deposited on the surface of a diamond substrate (1); The surface of the diamond epitaxial thin film layer (2) is hydrogenated to obtain a two-dimensional cavity gas layer; Photolithography is used to cover part of the two-dimensional hole gas layer with a mask, and the remaining two-dimensional hole gas layer is etched. The area covered by the mask forms a hydrogen terminal two-dimensional hole gas layer (3), which serves as a p-type conductive channel area. The etched area forms a mesa isolation area (4). A protective layer is deposited on the surface of the two-dimensional cavitation gas layer (3) at the hydrogen terminal; Two-dimensional semiconductor material is transferred to the surface of the mesa isolation region (4) and the protective layer; Photolithography is used to cover part of the two-dimensional semiconductor material with a mask. Part of the two-dimensional semiconductor material serves as the n-type conductive channel region. The two-dimensional semiconductor material in the non-n-type conductive channel region is etched away to form a two-dimensional semiconductor layer (5). Ohmic contacts of a first source electrode (6) and a first drain electrode (7) are formed at both ends of the two-dimensional semiconductor layer (5), and ohmic contacts of a second source electrode (8) and a second drain electrode (9) are formed at both ends of the hydrogen terminal two-dimensional hole gas layer (3). A first gate dielectric layer (10) is formed on the upper surface of the two-dimensional semiconductor layer (5), and a second gate dielectric layer (11) is formed on the upper surface of the terminal two-dimensional hole gas layer (3). A first gate electrode (12) is formed on the upper surface of the first gate dielectric layer (10), and a second gate electrode (13) is formed on the upper surface of the second gate dielectric layer (11). The first drain electrode (7) and the second drain electrode (9) are interconnected by metal, and the first gate electrode (12) and the second gate electrode (13) are interconnected by metal to form a complementary device. In the complementary device, the hydrogen terminal two-dimensional hole gas layer (3) serves as a p-type conductive channel, and the two-dimensional semiconductor layer (5) serves as an n-type conductive channel. Charge carriers migrate in the p-type conductive channel and the n-type conductive channel.

9. The method for fabricating a hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device according to claim 8, characterized in that, Hydrogenation involves placing the sample in a hydrogen plasma or hydrogen atmosphere at 500℃–900℃ for 10 seconds to 2 hours. The hydrogen flow rate in the hydrogen plasma or hydrogen atmosphere is 50–1000 sccm. After hydrogenation, the carrier concentration of the two-dimensional hole layer is 1 × 10⁻⁶. 12 cm -2 ~5×10 14 cm -2 The migration rate is 20cm. 2 / V·s~2500cm 2 / V·s.

10. The method for fabricating a hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device according to claim 8, characterized in that, The etching is performed using oxygen plasma etching with a power of 30W to 300W and a speed of 1nm / min to 1000nm / min.

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