A photoelectric sensing device

Abstract

The present invention discloses a photoelectric sensing device, which includes a substrate, a plurality of photodiode chips, and a package. The plurality of photodiode chips and the package are arranged on the substrate, and the package covers the plurality of photodiode chips. A light modulation layer is arranged on the top of the package, and a light modulation medium material is doped or deposited in the light modulation layer. The light modulation layer is used to modulate the wavelength or direction of light irradiated on the photoelectric sensing device. The light modulation layer includes a plurality of modulation areas, and different modulation areas are used to modulate light of different wavelengths or directions. The present invention provides a light modulation layer on the photosensitive surface of the photoelectric sensing device for optically modulating incident ambient light of a specific wavelength band or direction, thereby reducing noise generated by ambient light interference, optimizing the signal-to-noise ratio, and improving the integration of the device, thereby improving the working accuracy and working efficiency of the photoelectric sensing device.

Description

Technical Field

[0001] The present invention relates to the field of photoelectric sensing technology, and in particular to a photoelectric sensing device. Background Art

[0002] The full-spectrum PD sensing device is a device with photoselectivity for sensing the radiation intensity of light. It can receive radiation information of different bands of light such as heart rate, blood oxygen, blood pressure, blood sugar, etc. as a whole, and obtain corresponding physiological indicator information. Therefore, it is often used in the medical field. The principle of its implementation is that when the incident light is irradiated on the photosensitive surface of the photoelectric sensing device, the radiation intensity of light in different bands causes the photocurrent sensitivity generated by the sensing device to be different. However, the photoelectric sensing device is easily interfered and affected by ambient light, resulting in a poor signal-to-noise ratio of the photoelectric sensing device, resulting in poor sensing results. The current solution is usually to increase the light radiation power intensity of the receiving light source of the photoelectric sensing device, or to increase the photosensitive area of ​​the photoelectric sensing device, thereby improving the photocurrent sensitivity, but both of the above methods will lead to a sharp increase in costs. Summary of the invention

[0003] The purpose of the present invention is to overcome the shortcomings of the prior art. The present invention provides a photoelectric sensing device. By arranging a light modulation layer on the photosensitive surface of the photoelectric sensing device to optically modulate incident ambient light in a specific band or direction, the noise generated by ambient light interference can be reduced, the signal-to-noise ratio can be improved, the integration of the device can be improved, and the working accuracy and working efficiency of the photoelectric sensing device can be improved.

[0004] The present invention provides a photoelectric sensing device, which comprises a substrate, a plurality of photodiode chips, and a package body, wherein the plurality of photodiode chips and the package body are arranged on the substrate, and the package body covers the plurality of photodiode chips;

[0005] A light modulation layer is arranged on the top of the package body, and a light modulation medium material is doped or deposited in the light modulation layer. The light modulation layer is used to modulate the wavelength or direction of the light irradiated on the photoelectric sensing device. The light modulation layer includes a plurality of light modulation areas, and different light modulation areas are used to modulate light of different wavelengths or directions.

[0006] Furthermore, the thickness of the light modulation layer is 1 μm-100 μm.

[0007] Furthermore, the light modulation layer includes a first light modulation region and a second light modulation region, and an area ratio of the first light modulation region to the second light modulation region is 1:1-1:10.

[0008] Furthermore, a first light modulation structure is arranged on the top surface of the light modulation layer, and the first light modulation structure includes a plurality of first protrusions, and a light transmission layer and a light blocking layer are arranged on the surface of any one of the first protrusions.

[0009] Furthermore, the height of any one of the first protrusions is 0.02 μm-2 μm.

[0010] Furthermore, the distance between any two adjacent first protrusions is 0.02 μm-2 μm.

[0011] Furthermore, a second light modulation structure is arranged on the top surface of the light modulation layer, and the second light modulation structure is a tilted relief grating.

[0012] Furthermore, the inclination angle of the second light modulation structure is 30°-60°.

[0013] Furthermore, the line density of the second light modulation structure is less than or equal to 9000 lines / mm.

[0014] Furthermore, the distance from the top surface of the photodiode chip to the bottom surface of the light modulation layer is 1 μm-100 μm.

[0015] The present invention provides a photoelectric sensing device, wherein a light modulation layer is arranged on the top surface of a package of the photoelectric sensing device, and is divided into light modulation areas with different transmittances, and a first light modulation structure and a second light modulation structure are arranged, which can be used to light modulate incident ambient light of a specific band or direction, reduce noise generated by ambient light interference, optimize the signal-to-noise ratio, reduce costs, and improve the integration of the device, thereby improving the working accuracy and working efficiency of the photoelectric sensing device. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0017] Figure 1 is a schematic diagram of the first structure of the photoelectric sensing device in the first embodiment of the present invention;

[0018] Figure 2 is a schematic top view of a first structure of a photoelectric sensing device in Embodiment 1 of the present invention;

[0019] Figure 3 is a second structural schematic diagram of the photoelectric sensing device in the second embodiment of the present invention;

[0020] Figure 4 is a schematic top view of a second structure of a photoelectric sensing device in a second embodiment of the present invention;

[0021] Figure 5 is a third structural schematic diagram of the photoelectric sensing device in the third embodiment of the present invention;

[0022] Figure 6 It is a fourth structural schematic diagram of the photoelectric sensing device in the fourth embodiment of the present invention. DETAILED DESCRIPTION

[0023] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0024] In the present invention, it should be understood that terms such as "include" or "have" are intended to indicate the existence of features, numbers, steps, behaviors, components, parts or a combination thereof disclosed in the specification, and are not intended to exclude the possibility that one or more other features, numbers, steps, behaviors, components, parts or a combination thereof exist or are added.

[0025] It should also be noted that, in the absence of conflict, the embodiments and features of the embodiments of the present invention can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0026] Embodiment 1

[0027] Embodiment 1 of the present invention provides a photoelectric sensing device, which includes a substrate, a plurality of photodiode chips, and a package body. The plurality of photodiode chips and the package body are arranged on the substrate, and the package body covers the plurality of photodiode chips.

[0028] In an optional implementation of the present embodiment, the photodiode chip is a semiconductor photodiode chip (Photo-Diode, PD), which is a chip whose reverse current is modulated by photogenerated carriers under the irradiation of light of a certain wavelength and can be used to detect optical radiation signals. It is one of the components of a photoelectric sensing device.

[0029] It should be noted that the number of the plurality of photodiode chips may be one, or two or more, which may be determined according to actual design requirements. In the present embodiment, the number of the photodiode chip is one.

[0030] In an optional implementation of this embodiment, Figure 1 and Figure 2 As shown, Figure 1 FIG. 1 shows a first structural diagram of a photoelectric sensing device in Embodiment 1 of the present invention. Figure 2 FIG. 1 is a schematic top view of a first structure of a photoelectric sensing device in Embodiment 1 of the present invention. Figure 1 2 is a cross-sectional view. The photoelectric sensing device includes a substrate 1 , a first photodiode chip 21 , and a package 3 . The first photodiode chip 21 and the package 3 are arranged on the substrate 1 , and the package 3 covers the first photodiode chip 21 .

[0031] In an optional implementation of the present embodiment, a light modulation layer is provided on the top of the package body, and a light modulation medium material is doped or deposited in the light modulation layer. The light modulation layer is used to modulate the wavelength or direction of the light irradiated on the photoelectric sensing device. The light modulation layer includes a plurality of light modulation regions, and light modulation medium materials of different materials or different concentrations are doped or deposited in different light modulation regions. Different light modulation regions are used to optically modulate incident light of different wavelengths or directions.

[0032] Specifically, Figure 1 As shown, a light modulation layer 4 is disposed on the top of the package body 3, and the light modulation layer 4 includes two light modulation regions, including a first light modulation region 41 and a second light modulation region 42, and the first light modulation region 41 and the second light modulation region 42 are alternately arranged.

[0033] Specifically, in the present embodiment, the first light modulation region 41 is doped with a high concentration of red dye or red metal oxide, and its light modulation objects are mainly blue light and green light with wavelengths at the middle level, and the red light has a higher transmittance. The second light modulation region 42 is doped with a high concentration of green dye or green metal oxide, and its light modulation objects are mainly purple light and blue light with shorter wavelengths, and red light and orange light with longer wavelengths, and only green light is allowed to pass through. The components and light modulation objects in the first light modulation region 41 and the second light modulation region 42 are determined according to actual design requirements.

[0034] In an optional implementation of this embodiment, the area ratio of the first light modulation region 41 to the second light modulation region 42 is 1:1-1:10.

[0035] It should be noted that the area size of the light modulation area is selected according to the photocurrent sensitivity generated by sensing the same light radiation power intensity in different bands. Here, since the spectral response sensitivity of the photoelectric sensing device carried in the photodetector varies with the wavelength, the responsiveness of the detector is different in different bands. Therefore, it is necessary to select appropriate light modulation medium materials for incident light in different bands, and adjust the effective light modulation area to ensure that light in different bands reaches the radiation power of the detector after passing through the light modulation area, and the photocurrent generated meets the requirements.

[0036] Furthermore, the light modulation areas may be discontinuous, that is, different light modulation areas may be arranged alternately or at intervals, as long as the set area ratio is met.

[0037] In an optional implementation of this embodiment, the thickness of the light modulation layer 4 is 1μm-100μm.

[0038] In an optional implementation of this embodiment, the light modulation medium material includes one or more of color dyes, metal oxides, fused quartz, silicon, and borosilicate glass, wherein the color dyes and metal oxides are doped in the light modulation layer, and the fused quartz, silicon, and borosilicate glass are deposited in the light modulation layer.

[0039] In an optional implementation of this embodiment, when using color dyes, suitable organic or inorganic dyes and colors are selected according to the target wavelength of the corresponding light modulation area. For example, when red light needs to pass through, red dye is generally used to absorb blue light and green light and only allow red light to pass through. In addition, the transmittance can be controlled by adjusting the concentration and thickness of the color dye. The higher the concentration, the lower the transmittance.

[0040] In an optional implementation of this embodiment, a bonding pad 51 is further provided on the substrate 1 , and the first photodiode chip 21 is connected to the bonding pad 51 based on a bonding wire 52 .

[0041] In an optional implementation of this embodiment, the distance from the top surface of the first photodiode chip 21 to the bottom surface of the light modulation layer 4 is 1μm-100μm.

[0042] Specifically, the distance from the top surface of the first photodiode chip to the bottom surface of the light modulation layer is set to The distance can be shortened, and the thickness of the entire photoelectric sensing device can be reduced while effectively reducing the optical crosstalk problem at a shorter distance.

[0043] In summary, embodiment 1 of the present invention provides a photoelectric sensing device, wherein a light modulation layer is arranged on the top surface of the package of the photoelectric sensing device, and is divided into light modulation areas with different transmittances, which can be used to optically modulate incident ambient light in a specific band or direction, reduce the noise generated by ambient light interference, optimize the signal-to-noise ratio, reduce costs, and improve the integration of the device, thereby improving the working accuracy and working efficiency of the photoelectric sensing device.

[0044] Embodiment 2

[0045] A second embodiment of the present invention provides a photoelectric sensing device, which includes a substrate, a plurality of photodiode chips, and a package body. The plurality of photodiode chips and the package body are arranged on the substrate, and the package body covers the plurality of photodiode chips.

[0046] In an optional implementation of the present embodiment, the photodiode chip is a semiconductor photodiode chip (Photo-Diode, PD), which is a chip whose reverse current is modulated by photogenerated carriers under the irradiation of light of a certain wavelength and can be used to detect optical radiation signals. It is one of the components of a photoelectric sensing device.

[0047] It should be noted that the number of the plurality of photodiode chips may be one, or two or more, which is determined according to actual design requirements. In the present embodiment, the number of the photodiode chips is two.

[0048] In an optional implementation of this embodiment, Figure 3 and Figure 4 As shown, Figure 3 shows a second structural schematic diagram of the photoelectric sensing device in the second embodiment of the present invention, Figure 4 A top view schematic diagram of the second structure of the photoelectric sensing device in the second embodiment of the present invention is shown, wherein the photoelectric sensing device comprises a substrate 1, a second photodiode chip 22, a third photodiode chip 23, and a package 3, wherein the second photodiode chip 22, the third photodiode chip 23 and the package 3 are arranged on the substrate 1, and the package 3 covers the second photodiode chip 22 and the third photodiode chip 23.

[0049] In an optional implementation of the present embodiment, a light modulation layer is provided on the top of the package body, and a light modulation medium material is doped or deposited in the light modulation layer. The light modulation layer is used to modulate the wavelength or direction of the light irradiated on the photoelectric sensing device. The light modulation layer includes a plurality of light modulation regions, and light modulation medium materials of different materials or different concentrations are doped or deposited in different light modulation regions. Different light modulation regions are used to optically modulate incident light of different wavelengths or directions.

[0050] Specifically, Figure 3 As shown, a light modulation layer 4 is arranged on the top of the package body 3, and the light modulation layer 4 includes three light modulation areas, including a third light modulation area 43, a fourth light modulation area 44 and a fifth light modulation area 45, wherein the third light modulation area 43 and the fourth light modulation area 44 are arranged on the left part of the light modulation layer 4, covering the top of the second photodiode chip 22, and the fifth light modulation area 45 is arranged on the right part of the light modulation layer 4, covering the top of the third photodiode chip 23.

[0051] Specifically, in the present embodiment, the third light modulation region 43 is doped with a high concentration of red dye or red oxide, and its light modulation objects are mainly blue light and green light with wavelengths at the middle level, and the red light has a higher transmittance. The fourth light modulation region 44 is doped with a high concentration of yellow or orange dye, and its light modulation objects are mainly blue light or ultraviolet light with a shorter wavelength, and the yellow light or orange light has a higher transmittance. The fifth light modulation region 45 is doped with a high concentration of green dye or green oxide, and its light modulation objects are mainly purple light and blue light with a shorter wavelength, and red light and orange light with a longer wavelength, and only green light is allowed to pass through. The components and light modulation objects in the third light modulation region 43, the fourth light modulation region 44 and the fifth light modulation region 45 are determined according to actual design requirements.

[0052] It should be noted that the area size of the light modulation area is selected according to the photocurrent sensitivity generated by sensing the same light radiation power intensity in different bands. Here, since the spectral response sensitivity of the photoelectric sensing device carried in the photodetector varies with the wavelength, the responsiveness of the detector is different in different bands. Therefore, it is necessary to select appropriate light modulation medium materials for incident light in different bands, and adjust the effective light modulation area to ensure that light in different bands reaches the radiation power of the detector after passing through the light modulation area, and the photocurrent generated meets the requirements.

[0053] In an optional implementation of this embodiment, the second photodiode chip 22 and the third photodiode chip 23 have different sensing sensitivities.

[0054] Furthermore, it is considered here to set up two or more photodiode chips with different sensing sensitivities, and set up light modulation areas with different transmittances and transmittance properties above them, so as to achieve a smaller size and increase the integration of the photoelectric sensing device compared to a photoelectric sensing device with only one photodiode chip.

[0055] In an optional implementation of this embodiment, the thickness of the light modulation layer 4 is 1μm-100μm.

[0056] In an optional implementation of this embodiment, the light modulation medium material includes one or more of color dyes, metal oxides, fused quartz, silicon, and borosilicate glass, wherein the color dyes and metal oxides are doped in the light modulation layer, and the fused quartz, silicon, and borosilicate glass are deposited in the light modulation layer.

[0057] In an optional implementation of this embodiment, when using color dyes, suitable organic or inorganic dyes and colors are selected according to the target wavelength of the corresponding light modulation area. For example, when red light needs to pass through, red dye is generally used to absorb blue light and green light and only allow red light to pass through. In addition, the transmittance can be controlled by adjusting the concentration and thickness of the color dye. The higher the concentration, the lower the transmittance.

[0058] In an optional implementation of this embodiment, a pad 51 is further provided on the substrate 1 , and the second photodiode chip 22 and the third photodiode chip 23 are connected to the pad 51 based on a bonding wire 52 .

[0059] In an optional implementation of this embodiment, the distance from the top surface of the second photodiode chip 22 to the bottom surface of the light modulation layer 4 is 1 μm-100 μm, the distance from the top surface of the third photodiode chip 23 to the bottom surface of the light modulation layer 4 1μm-100μm.

[0060] Specifically, the distance from the top surface of the second photodiode chip to the bottom surface of the light modulation layer is set to , and the distance from the top surface of the third photodiode core to the bottom surface of the filter layer The distance can be shortened, and the thickness of the entire photoelectric sensing device can be reduced while effectively reducing the optical crosstalk problem at a shorter distance.

[0061] In summary, embodiment 2 of the present invention provides a photoelectric sensing device, wherein a light modulation layer is arranged on the top surface of the package of the photoelectric sensing device, and is divided into light modulation areas with different transmittances, which can be used to optically modulate incident ambient light in a specific band or direction, reduce the noise generated by ambient light interference, optimize the signal-to-noise ratio, reduce costs, and improve the integration of the device, thereby improving the working accuracy and working efficiency of the photoelectric sensing device.

[0062] Embodiment 3

[0063] Embodiment 3 of the present invention provides a photoelectric sensing device, which includes a substrate, a plurality of photodiode chips, and a package body. The plurality of photodiode chips and the package body are arranged on the substrate, and the package body covers the plurality of photodiode chips.

[0064] In an optional implementation of the present embodiment, the photodiode chip is a semiconductor photodiode chip (Photo-Diode, PD), which is a chip whose reverse current is modulated by photogenerated carriers under the irradiation of light of a certain wavelength and can be used to detect optical radiation signals. It is one of the components of a photoelectric sensing device.

[0065] It should be noted that the number of the plurality of photodiode chips may be one, or two or more, which is determined according to actual design requirements. In the present embodiment, the number of the photodiode chip is one.

[0066] In an optional implementation of this embodiment, Figure 5 As shown, Figure 5 FIG. 3 shows a third structural diagram of the photoelectric sensing device in the third embodiment of the present invention. Figure 5 2 is a cross-sectional view, the photoelectric sensing device comprises a substrate 1 , a fourth photodiode chip 24 , and a package 3 . The fourth photodiode chip 24 and the package 3 are arranged on the substrate 1 , and the package 3 covers the fourth photodiode chip 24 .

[0067] In an optional implementation of the present embodiment, a light modulation layer is provided on the top of the package body, and a light modulation medium material is doped or deposited in the light modulation layer. The light modulation layer is used to optically modulate incident light of a specific band irradiated on the photosensitive surface of the photoelectric sensing device. The light modulation layer includes a plurality of light modulation regions, and light modulation medium materials of different materials or different concentrations are doped or deposited in different light modulation regions. Different light modulation regions are used to optically modulate incident light of different wavelengths.

[0068] In an optional implementation of this embodiment, the light modulation medium material includes one or more of color dyes, metal oxides, fused quartz, silicon, and borosilicate glass, wherein the color dyes and metal oxides are doped in the light modulation layer, and the fused quartz, silicon, and borosilicate glass are deposited in the light modulation layer.

[0069] In an optional implementation of this embodiment, Figure 5 As shown, a light modulation layer 4 is arranged on the top of the package body 3, and a first light modulation structure 6 is arranged on the top surface of the light modulation layer 4. The first light modulation structure 6 includes a first bearing part 61 and a plurality of first protrusions 62 arranged on the first bearing part 61, and a light transmission layer 63 and a light blocking layer 64 are arranged on the surface of any one of the first protrusions 62. The light transmission layer 63 is used to absorb incident light, and the light blocking layer 64 is used to reflect incident light.

[0070] Specifically, the light-transmitting layer 63 is disposed on the left side surface corresponding to the first protrusion 62 , and the light-blocking layer 64 is disposed on the top surface and the right side surface corresponding to the first protrusion 62 .

[0071] It should be noted that if Figure 3 As shown, the arrow is the direction of incident light. When the incident light hits the light-transmitting layer, it is absorbed. When it hits the light-blocking layer, it is reflected onto the fourth photodiode chip. A light-transmitting layer is provided here to absorb incident light in a specific direction and prevent it from hitting the photodiode chip. A light-blocking layer is provided here to reflect incident light in a specific direction and allow it to hit the photodiode chip.

[0072] In an optional implementation of the present embodiment, the light-transmitting layer may be a carbon black coating that can absorb light from the visible light band to the infrared light band (wavelength from 0 to 900 nm), and the light-blocking layer may be an aluminum coating or a silver coating, wherein the aluminum coating can reflect light from the ultraviolet light band to the infrared light band, and the silver coating can reflect light from the visible light band and the near-infrared light band, and the thickness of the light-transmitting layer and the light-blocking layer are both set at the nanometer to micrometer level.

[0073] In an optional implementation of this embodiment, the height of any first protrusion 62 is 0.02μm-2μm.

[0074] Specifically, the height of the first protrusion is set , without affecting the reflection and refraction efficiency of the incident light, the overall thickness of the device is minimized to the greatest extent, effectively reducing the impact of optical crosstalk problems.

[0075] In an optional implementation of this embodiment, the distance between any two adjacent first protrusions 62 is 0.02μm-2μm.

[0076] Specifically, the distance between any two adjacent first protrusions 62 is set to If it is too small, the incident efficiency of the incident light will be low, and if it is too large, the light modulation efficiency of the entire first light modulation structure 61 will be low.

[0077] In an optional implementation of this embodiment, a bonding pad 51 is further provided on the substrate 1 , and the fourth photodiode chip 24 is connected to the bonding pad 51 based on a bonding wire 52 .

[0078] In an optional implementation of this embodiment, the distance from the top surface of the fourth photodiode chip 24 to the bottom surface of the light modulation layer 4 is 1μm-100μm.

[0079] Specifically, the distance from the top surface of the fourth photodiode chip to the bottom surface of the light modulation layer is set to The distance can be shortened, and the thickness of the entire photoelectric sensing device can be reduced while effectively reducing the optical crosstalk problem at a shorter distance.

[0080] In summary, embodiment three of the present invention provides a photoelectric sensing device, wherein a light modulation layer is arranged on the top surface of the package of the photoelectric sensing device, and a first light modulation structure including a plurality of first protrusions is arranged on the light modulation layer, and a light transmission layer and a light blocking layer are arranged on the first protrusions. The light transmission layer absorbs incident ambient light in a specific direction, and the light blocking layer reflects incident ambient light in a specific direction to the photodiode chip, thereby reducing noise generated by ambient light interference, optimizing the signal-to-noise ratio, reducing costs, and improving the integration of the device, thereby improving the working accuracy and working efficiency of the photoelectric sensing device.

[0081] Embodiment 4

[0082] Embodiment 4 of the present invention provides a photoelectric sensing device, which includes a substrate, a plurality of photodiode chips, and a package body. The plurality of photodiode chips and the package body are arranged on the substrate, and the package body covers the plurality of photodiode chips.

[0083] In an optional implementation of the present embodiment, the photodiode chip is a semiconductor photodiode chip (Photo-Diode, PD), which is a chip whose reverse current is modulated by photogenerated carriers under the irradiation of light of a certain wavelength and can be used to detect optical radiation signals. It is one of the components of a photoelectric sensing device.

[0084] It should be noted that the number of the plurality of photodiode chips may be one, or two or more, which is determined according to actual design requirements. In the present embodiment, the number of the photodiode chip is one.

[0085] In an optional implementation of this embodiment, Figure 6 As shown, Figure 6 FIG. 4 shows a fourth structural diagram of the photoelectric sensing device in the fourth embodiment of the present invention. Figure 6 2 is a cross-sectional view, the photoelectric sensing device comprises a substrate 1 , a fifth photodiode chip 25 , and a package 3 . The fifth photodiode chip 25 and the package 3 are arranged on the substrate 1 , and the package 3 covers the fifth photodiode chip 25 .

[0086] In an optional implementation of the present embodiment, a light modulation layer is provided on the top of the package body, and a light modulation medium material is doped or deposited in the light modulation layer. The light modulation layer is used to optically modulate incident light of a specific band irradiated on the photosensitive surface of the photoelectric sensing device. The light modulation layer includes a plurality of light modulation regions, and light modulation medium materials of different materials or different concentrations are doped or deposited in different light modulation regions. Different light modulation regions are used to optically modulate incident light of different wavelengths.

[0087] In an optional implementation of this embodiment, the light modulation medium material includes one or more of color dyes, metal oxides, fused quartz, silicon, and borosilicate glass, wherein the color dyes and metal oxides are doped in the light modulation layer, and the fused quartz, silicon, and borosilicate glass are deposited in the light modulation layer.

[0088] In an optional implementation of this embodiment, Figure 6 As shown, a light modulation layer 4 is disposed on the top of the package body 3, and a second light modulation structure 7 is disposed on the top surface of the light modulation layer 4, and the second light modulation structure 7 is an inclined relief grating.

[0089] Specifically, the second light modulation structure is set here as a tilted relief grating. By adjusting the tilt angle of the grating to match the required light diffraction direction, and by adjusting the line spacing and line density of the grating, incident light of a specific wavelength is selectively allowed to pass through, and incident light of other wavelengths is diffracted, thereby eliminating ambient light interference.

[0090] Specifically, the grating, through its periodic structure, causes incident light of different wavelengths to bend to different degrees when passing through the grating, which is a diffraction phenomenon. The angle of diffraction is related to the period of the base grating of the wavelength of the incident light. When a specific period matches the wavelength of the incident light, the incident light of the relevant wavelength interferes, causing it to be strengthened or weakened in a specific direction. In this way, incident light of a specific wavelength can be selectively allowed to pass through the grating and then illuminate the photodiode chip, thereby achieving precise control of the spectrum and light modulation. In addition, by adjusting the line spacing and line density of the grating, as well as the tilt angle (diffraction angle) of the grating, the period of the grating can be changed to control the intensity of a specific wavelength at a specific diffraction order to be enhanced (bright diffraction stripes) or weakened (dark stripes).

[0091] In an optional implementation of the present embodiment, the second light modulation structure 7 includes a grating bearing portion 71 and a plurality of grating plates 72 disposed on the grating bearing portion 71 , and the plurality of grating plates 72 are disposed at the lower portion of the grating bearing portion 71 , close to the fifth photodiode chip 25 .

[0092] In an optional implementation of this embodiment, the inclination angle of the grating sheet 72 is The inclination angle of the plurality of grating sheets 72 is consistent.

[0093] Specifically, the tilt angle of the grating plate 72 is determined according to the incident angle of the incident light and the diffraction efficiency to be maximized, and the specific angle depends on the target wavelength of the incident light to be transmitted and the position of the photodiode chip.

[0094] It should be noted that the tilt angle Refers to the angle between the grating sheet 72 and the vertical direction.

[0095] In an optional implementation of this embodiment, the line density of the grating sheet 72 on the second light modulation structure 7 is less than or equal to 9000 lines / mm.

[0096] Specifically, the line density of the grating determines the resolution of the grating and the wavelength range of the incident light that can be diffracted onto the photodiode chip. The higher the line density, the higher the resolution of the grating.

[0097] In an optional implementation of this embodiment, the material of the second light modulation structure 7 is one or more of fused quartz, silicon, and borosilicate glass.

[0098] In an optional implementation of this embodiment, a pad 51 is further provided on the substrate 1 , and the fifth photodiode chip 25 is connected to the pad 51 via a bonding wire 52 .

[0099] In an optional implementation of this embodiment, the distance from the top surface of the fifth photodiode chip 25 to the bottom surface of the light modulation layer 4 is 1μm-100μm.

[0100] Specifically, the distance from the top surface of the fifth photodiode chip to the bottom surface of the light modulation layer is set to The distance can be shortened, and the thickness of the entire photoelectric sensing device can be reduced while effectively reducing the optical crosstalk problem at a shorter distance.

[0101] In summary, embodiment 4 of the present invention provides a photoelectric sensing device, wherein a light modulation layer is arranged on the top surface of the package of the photoelectric sensing device, and a second light modulation structure composed of an inclined relief grating is arranged on the light modulation layer. Based on the diffraction phenomenon of the grating structure, incident light of a specific wavelength is selectively allowed to pass through, and incident light of other wavelengths is diffracted, thereby reducing the noise generated by ambient light interference, optimizing the signal-to-noise ratio, reducing costs, and improving the integration of the device, thereby improving the working accuracy and working efficiency of the photoelectric sensing device.

[0102] A person skilled in the art may understand that all or part of the steps in the various methods of the above embodiments may be completed by instructing related hardware through a program, and the program may be stored in a computer-readable storage medium, and the storage medium may include: a read-only memory (ROM), a random access memory (RAM), a disk or an optical disk, etc.

[0103] In addition, the embodiments of the present invention are described in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A photoelectric sensing device, characterized in that: The photoelectric sensing device comprises a substrate, a plurality of photodiode chips, and a package body, wherein the plurality of photodiode chips and the package body are arranged on the substrate, and the package body covers the plurality of photodiode chips; The photoelectric sensing device is a device for sensing the radiation intensity of light, and is used to receive radiation information of light of different wavelength bands under the physiological index information as a whole; A light modulation layer is disposed on the top of the package body, wherein the light modulation layer is doped or deposited with a light modulation medium material, and the light modulation layer is used to modulate the wavelength or direction of the light irradiated on the photoelectric sensing device, and the light modulation layer includes a plurality of light modulation regions, and different light modulation regions are used to modulate light of different wavelengths or directions; The light modulation layer includes a first light modulation region and a second light modulation region, the area ratio of the first light modulation region to the second light modulation region is 1:1-1:10, and the first light modulation region and the second light modulation region are alternately arranged; The first light modulation region is doped with a high concentration of red dye or red metal oxide, and the second light modulation region is doped with a high concentration of green dye or green metal oxide; A first light modulation structure is arranged on the top surface of the light modulation layer, and the first light modulation structure includes a plurality of first protrusions. A light transmission layer and a light blocking layer are arranged on the surface of any one of the first protrusions, the light transmission layer is arranged on the left side of the first protrusion, and the light blocking layer is arranged on the top surface and the right side of the first protrusion.

2. The photoelectric sensing device according to claim 1, wherein: The thickness of the light modulation layer is 1 μm-100 μm.

3. The photoelectric sensing device according to claim 1, wherein: The height of any one of the first protrusions is 0.02 μm-2 μm.

4. The photoelectric sensing device according to claim 1, wherein: The distance between any two adjacent first protrusions is 0.02 μm-2 μm.

5. The photoelectric sensing device according to claim 1, wherein: The distance from the top surface of the photodiode chip to the bottom surface of the light modulation layer is 1 μm-100 μm.

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