Full-color laser display device and manufacturing method thereof

Abstract

The invention relates to a full-color laser display device and a manufacturing method thereof, and the full-color laser display device can directly output lasers with different colors and realize high-quality full-color display. Comprising a substrate, a light emitting array and multiple types of quantum dots VCSELs. And constructing a quantum dot vertical cavity surface emitting laser on part or all of the first light emitting units to form an optical resonant cavity. The wavelength of light resonated and amplified by the resonant cavity is accurately matched with the central wavelength of emergent light of the quantum dot layer, so that direct conversion from a basic light source to laser with a specific color is realized. The quantum dot vertical cavity surface emitting laser comprises two or more types, is equipped with quantum dot layers of different materials, and emits light of different wavelengths. In the manufacturing process, photoetching, film coating and quantum dot synthesis and deposition technologies are adopted, a target area is protected through a mask, and the forming position and type of the quantum dot vertical cavity surface emitting laser are controlled. The color conversion process is simplified, the accuracy and the color gamut coverage range are improved, and meanwhile the advantages of low power consumption and high light beam collimation are kept.

Description

Technical Field

[0001] The present application relates to the field of laser display technology, and in particular to a full-color laser display device and a manufacturing method thereof. Background Art

[0002] As a new generation of display technology, full-color laser display technology is gradually becoming a force to promote innovation and development in high-end manufacturing, smart cities, smart homes, smart phones, virtual reality, augmented reality and smart driving. Among them, vertical cavity surface emitting laser (VCSEL) provides an ideal light source solution for high-density circuit and system design with its unique advantages, such as excellent beam quality, high modulation bandwidth, long life and single-mode light emission characteristics, coupled with its compact size and easy integration. The wide application of VCSEL is not only limited to the field of optical communications, but also shows great potential in many fields such as sensors, laser printing, laser medical treatment, industrial processing and laser display.

[0003] However, despite the significant progress made in GaN-based VCSEL technology, there are still many technical bottlenecks and challenges in realizing full-color laser display based on VCSEL. In particular, in the preparation of red, green and blue VCSEL, the core of full-color laser display, the complexity of material epitaxy technology and the limitations of device structure design, such as the "green gap" problem (green light efficiency and stability problems) and the difficulty in growing high-quality red light quantum wells, directly hinder the commercialization of full-color laser display. In addition, although full-color laser display technology based on quantum dots provides another possible solution, the shortcomings of quantum dot materials in blue light performance also limit its widespread promotion in practical applications. Although the electrically injected quantum dot VCSEL technology has potential advantages, it is still in the initial research and development stage due to the imperfections of material properties and electrical injection channel design, and it is difficult to quickly transform into productivity.

[0004] In view of the above problems, the current full-color laser display preparation technology on the market generally has the disadvantages of complex preparation process, multiple massive transfers and reliance on expensive external auxiliary equipment, which not only increases production costs, but also limits the market competitiveness of products. Therefore, exploring a new full-color laser display device and its production method that can achieve high integration, reduce costs and improve efficiency has become the focus of attention. In order to overcome the limitations of existing technologies and promote the further development of full-color laser display technology, it is necessary to develop a technical solution that can effectively solve the key problems in material epitaxy, device structure design and preparation process, and realize the efficient and low-cost preparation of red, green and blue VCSELs. Summary of the invention

[0005] The purpose of the present application is first to provide a vertical cavity surface emitting laser with a simplified structure, which can generate high-collimation laser only through light excitation. The quantum dot vertical cavity surface emitting laser specifically includes an excitation light source, a quantum dot layer bottom reflector, a quantum dot layer and a quantum dot layer top reflector, wherein the quantum dot layer bottom reflector, the quantum dot layer and the quantum dot layer top reflector are stacked in sequence; The quantum dot layer includes light-converting luminescent quantum dots, which receive light from an excitation light source and convert it into light of another wavelength, an optical resonant cavity is formed between the bottom reflector of the quantum dot layer and the top reflector of the quantum dot layer, and the wavelength of the light resonantly amplified by the optical resonant cavity is the same as the central wavelength of the output light of the quantum dot layer; The quantum dot layer bottom reflector is formed on the excitation light source, and the light from the excitation light source enters the optical resonant cavity through the quantum dot layer bottom reflector.

[0006] In one embodiment, the light-converting luminescent quantum dots are down-converting luminescent quantum dots.

[0007] In one embodiment, the light emitted by the excitation light source is blue light or ultraviolet light, and the output light of the down-conversion luminescent quantum dots is green light or red light.

[0008] In one embodiment, the excitation light source includes a vertical cavity surface emitting laser structure.

[0009] The present application further provides a full-color laser display device, which can achieve high-resolution full-color display, and can obtain display products with higher brightness and wider color gamut, enhance beam collimation, reduce speckle, and ensure low power consumption. The full-color laser display device includes a substrate, a light-emitting array, and a quantum dot vertical cavity surface emitting laser; The light emitting array comprises a plurality of first light emitting units arranged in an array; The quantum dot vertical cavity surface emitting lasers are formed on part or all of the first light-emitting units, each of which includes a quantum dot layer bottom reflector, a quantum dot layer and a quantum dot layer top reflector, an optical resonant cavity is formed between the quantum dot layer bottom reflector and the quantum dot layer top reflector, and the wavelength of the light resonantly amplified by the optical resonant cavity is the same as the central wavelength of the output light of the quantum dot layer; Among them, there are more than two different types of quantum dot vertical cavity surface emitting lasers, and different types of quantum dot vertical cavity surface emitting lasers have different quantum dot layers.

[0010] In one embodiment, the first light emitting unit is a first vertical cavity surface emitting laser, and each of the first vertical cavity surface emitting lasers includes a first bottom reflector, an active layer and a first top reflector.

[0011] In one embodiment, the first top reflector and the quantum dot layer bottom reflector are in the same layer structure.

[0012] In one embodiment, the first vertical cavity surface emitting laser is a blue laser or an ultraviolet laser.

[0013] In one of the embodiments, the output light of the quantum dot layer in the quantum dot vertical cavity surface emitting laser includes green light and red light.

[0014] In one of the embodiments, the center wavelength of the output light of the first vertical cavity surface emitting laser is 450nm, the center wavelength of the green light is 520nm, and the center wavelength of the red light is 630nm.

[0015] In one embodiment, the number of first VCSELs that do not form the quantum dot VCSELs, the number of quantum dot VCSELs that emit green light, and the number of quantum dot VCSELs that emit red light are the same.

[0016] In one of the embodiments, the quantum dot vertical cavity surface emitting laser is formed on the light exit hole of the first vertical cavity surface emitting laser.

[0017] In one embodiment, the size of the quantum dot layer bottom reflector is larger than the light exit hole size of the first vertical cavity surface emitting laser.

[0018] In one of the embodiments, the size of the quantum dot layer is the same as the size of the bottom reflector of the quantum dot layer, and the size of the top reflector of the quantum dot layer is larger than the size of the quantum dot layer.

[0019] In addition, the present application also provides a method for manufacturing a full-color laser display device, which can not only avoid the major difficulty of multiple mass transfers, but also reduce the use of expensive external auxiliary equipment, and can achieve high integration and cost reduction and efficiency improvement, including: Manufacturing a plurality of first light-emitting units arranged in an array on a substrate to form a light-emitting array; Depositing a quantum dot layer bottom reflector, a quantum dot layer, and a quantum dot layer top reflector on part or all of the first light-emitting units in the light-emitting array to form a quantum dot vertical cavity surface emitting laser on the first light-emitting unit; An optical resonant cavity is formed between the bottom reflector of the quantum dot layer and the top reflector of the quantum dot layer, the wavelength of light resonantly amplified by the optical resonant cavity is the same as the central wavelength of the output light of the quantum dot layer, and the quantum dot layer includes more than two different types of quantum dots to form more than two different types of quantum dot vertical cavity surface emitting lasers.

[0020] In one embodiment, the steps of manufacturing quantum dot vertical cavity surface emitting lasers including different types specifically include: before forming one type of the quantum dot vertical cavity surface emitting laser, forming a mask at a position outside the area where the quantum dot vertical cavity surface emitting laser of that type is formed, to form the quantum dot vertical cavity surface emitting laser of the corresponding type.

[0021] In one of the embodiments, the first light emitting unit is a first vertical cavity surface emitting laser, and the specific manufacturing process includes: forming a first bottom reflector, an active layer and a first top reflector in sequence.

[0022] In one embodiment, the mask is formed on the top reflector of the quantum dot layer, and the mask material is a light-proof and easily removable film layer, such as Cr, etc., to protect the prepared quantum dot vertical cavity surface emitting laser from being affected by the lithography light source during the secondary lithography.

[0023] In one of the embodiments, the central wavelength of the output light of the active layer is 450 nm, and the output light of the quantum dot layer includes light with central wavelengths of 520 nm and 630 nm respectively.

[0024] In one embodiment, the quantum dot layer having an output light central wavelength of 520 nm is first formed.

[0025] In one embodiment, the thickness of the quantum dot layer is half of the central wavelength of the light emitted from the quantum dot layer.

[0026] Compared with the prior art, the present application has the following beneficial effects: the full-color laser display device and its manufacturing method proposed in the present application realize high-resolution full-color display, high brightness and wide color gamut, enhanced beam collimation and reduced speckle and other technical effects by combining the light-emitting array with quantum dot vertical cavity surface emitting laser (VCSEL) technology. Through an integrated design, the present application directly constructs different types of quantum dot vertical cavity surface emitting lasers on the light-emitting array, including green quantum dot vertical cavity surface emitting lasers and red quantum dot vertical cavity surface emitting lasers, which are combined with blue light or ultraviolet vertical cavity surface emitting lasers that may serve as the basis, to realize the direct emission of the three primary colors of red, green and blue, thereby eliminating the need for a complex color conversion process and improving the color purity and resolution of the display. Thanks to the high modulation bandwidth of VCSEL and the efficient luminescence characteristics of quantum dot materials, this device can output high-brightness laser beams while covering a wider color gamut. By precisely controlling the material composition and thickness of the quantum dot layer, it ensures that each color VCSEL achieves optimal luminescence efficiency, thereby achieving full-color laser display with high brightness and wide color gamut, meeting the stringent requirements of high-end display applications for color richness and brightness.

[0027] This application optimizes the reflector structure and optical resonant cavity design of blue or purple VCSEL and quantum dot vertical cavity surface emitting laser, effectively improves the collimation of the light beam, reduces the diffusion and speckle phenomenon of the light beam during propagation, and not only improves the clarity and contrast of the image, but also reduces visual fatigue and improves viewing comfort. By precisely controlling the working state of each light-emitting unit and quantum dot VCSEL, efficient energy utilization is achieved, unnecessary energy loss is avoided, and at the same time, due to the efficient light-emitting characteristics of quantum dot materials, the overall power consumption is further reduced.

[0028] The manufacturing method of the present application avoids the complex process of multiple mass transfers in traditional full-color laser display technology, reduces the use of expensive external auxiliary equipment, and reduces production costs. In a specific solution, by directly constructing a quantum dot vertical cavity surface emitting laser on a VCSEL array, a highly integrated design is achieved, production efficiency is improved, the size and weight of the equipment are reduced, and flexible application in various display terminals is facilitated. The full-color laser display device and its manufacturing method of the present application have better performance in improving display performance, reducing costs, and enhancing integration. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 is a schematic structural diagram of a quantum dot vertical cavity surface emitting laser in one embodiment of the present application; Figure 2 is a schematic structural diagram of a full-color laser display device in one embodiment of the present application; Figure 3 It is a schematic diagram of the process of manufacturing the full-color laser display device of the present application; Figure 4 It is a structural schematic diagram of each step of the full-color laser display device in the specific implementation method of this application.

[0030] Explanation of the reference numerals: 100, substrate; 200, light-emitting array; 210, first light-emitting unit; 211, first vertical cavity surface emitting laser; 212, excitation light source; 220, first bottom reflector; 230, active layer; 240, first top reflector; 250, light output hole; 300, quantum dot vertical cavity surface emitting laser; 310, quantum dot layer bottom reflector; 320, quantum dot layer; 330, quantum dot layer top reflector; 340, mask. DETAILED DESCRIPTION

[0031] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. It is to be understood that the specific embodiments described herein are only used to explain the present application, rather than to limit the present application. It should also be noted that, for ease of description, only some structures related to the present application are shown in the accompanying drawings, rather than all structures. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0032] The terms "including" and "having" and any variations thereof in this application are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products or devices.

[0033] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0034] Full-color laser display, with its advantages of excellent color expression, high brightness and wide color gamut, has shown great application potential and market prospects in high-end manufacturing, smart cities, smart homes, smart phones, virtual reality, augmented reality and smart driving. However, traditional full-color laser display technology often faces many challenges in the implementation process, such as material selection, device structure, and preparation process, resulting in high production costs and difficulty in large-scale commercial application. In order to overcome these difficulties, this application proposes an innovative full-color laser display device and its manufacturing method. The device cleverly combines vertical cavity surface emitting lasers (VCSELs) with quantum dot light conversion technology to achieve direct emission of the three primary colors of red, green and blue, without the need for complex color conversion processes, thereby greatly improving display performance and reducing production costs. Please refer to Figure 1 As shown, Figure 1It is a structural schematic diagram of a quantum dot vertical cavity surface emitting laser in an embodiment of the present application. The quantum dot vertical cavity surface emitting laser 300 includes an excitation light source 212, a quantum dot layer bottom reflector 310, a quantum dot layer 320 and a quantum dot layer top reflector 330. The quantum dot layer bottom reflector 310, the quantum dot layer 320 and the quantum dot layer top reflector 330 are stacked in sequence. The quantum dot layer 320 includes light-converting luminescent quantum dots. The light-converting luminescent quantum dots receive light from the excitation light source and convert it into light of another wavelength. An optical resonant cavity is formed between the quantum dot layer bottom reflector 310 and the quantum dot layer top reflector 320. The wavelength of light resonantly amplified by the optical resonant cavity is the same as the central wavelength of the output light of the quantum dot layer. The quantum dot layer bottom reflector is formed on the excitation light source, and the light from the excitation light source enters the optical resonant cavity through the quantum dot layer bottom reflector.

[0035] The "quantum dot layer bottom reflector" and "quantum dot layer top reflector" referred to in this application are the bottom reflector and top reflector corresponding to the quantum dot layer, and do not refer to the reflector formed by quantum dots. The reflector can enhance and improve the collimation of the light converted by the quantum dots.

[0036] The quantum dot vertical cavity surface emitting laser of the present application does not need to set up complex structures such as electrodes, but only needs the bottom reflector of the quantum dot layer, the quantum dot layer and the top reflector of the quantum dot layer to be stacked in sequence, and no additional functional layer is required between the layers. It can only be composed of the bottom reflector of the quantum dot layer, the quantum dot layer and the top reflector of the quantum dot layer, which simplifies the structure. By using down-conversion luminescent quantum dots, it is only necessary to enable the excitation light to enter the optical resonant cavity, and the excitation light does not need to be strictly limited in a specific manner.

[0037] Furthermore, the light-converting luminescent quantum dots are down-converting luminescent quantum dots. In this arrangement, the incident light enters the optical resonant cavity of the quantum dot vertical cavity surface emitting laser through the bottom, and does not diverge from other places. This can be achieved in a stacked manner in the structural design. It is only necessary to guide the incident excitation light to the quantum dot layer at the bottom, and emit light of a specific wavelength under specific excitation light by means of quantum dot light excitation. In the field of display technology, the device structure can be greatly simplified, and the combination of different quantum dots can achieve full-color display on the basis of greatly simplifying the overall structure.

[0038] The light conversion method can specifically include up-conversion materials and down-conversion materials. In specific applications, when up-conversion materials are used, the excitation light is red light, and the output light of the quantum dot layer is blue light or yellow light. When down-conversion materials are used, the excitation light is blue light, and the output light of the quantum dot layer is yellow light or red light. In a preferred technical solution, the excitation light of the down-conversion luminescent quantum dots is blue light or ultraviolet light, and the output light of the down-conversion luminescent quantum dots is green light or red light. In this setting, red, green, and blue light can be provided. By adjusting the parameters of the three colors of light, full-color display can be achieved in a simple way. Of course, this is one of the more preferred implementation schemes. The present application can also select light of other wavelengths. The above-mentioned technical solution using red, green, and blue is relatively clear for the regulation of related display colors.

[0039] Furthermore, the excitation light source includes a vertical cavity surface emitting laser structure, that is, in an optional technical solution, two stacked vertical cavity surface emitting laser structures are used to form a quantum dot vertical cavity surface emitting laser as a whole, which can use excitation light with a more concentrated wavelength to light excite the quantum dots, and according to the design of the light conversion quantum dots, excite light of a specific wavelength, thereby improving the light utilization rate and the concentration of the emission wavelength. This structure can facilitate the realization of a full-color laser display device, and the relevant specific methods and principles are described in detail in the relevant scheme of the full-color laser display device.

[0040] Please read further Figure 2 , Figure 2 1 is a schematic diagram of the structure of a full-color laser display device in an embodiment of the present application. The full-color laser display device in a preferred embodiment of the present application is suitable for realizing high-resolution full-color display, and can obtain display products with higher brightness and wider color gamut, enhance beam collimation, reduce speckle, and ensure low power consumption. The full-color laser display device includes a substrate 100, a light-emitting array 200, and a quantum dot vertical cavity surface emitting laser 300. The light-emitting array 200 includes first light-emitting units 210 arranged in an array. The quantum dot vertical cavity surface emitting laser 300 is formed on part or all of the light-emitting units 210, respectively. Each of the quantum dot vertical cavity surface emitting lasers 300 includes a quantum dot layer bottom reflector 310, a quantum dot layer 320 and a quantum dot layer top reflector 330. An optical resonant cavity is formed between the quantum dot layer bottom reflector 310 and the quantum dot layer top reflector 330. The wavelength of light resonantly amplified by the optical resonant cavity is the same as the central wavelength of the output light of the quantum dot layer 320.

[0041] Among them, there are two or more different types of quantum dot vertical cavity surface emitting lasers 300, and different types of quantum dot vertical cavity surface emitting lasers 300 have different quantum dot layers 320. Different quantum dot layers 320 here refer to the ability to emit light of different wavelengths, which can be any possible difference in specific materials, material structures, etc. that may cause quantum dots to emit light of different wavelengths. Different types of quantum dot vertical cavity surface emitting lasers 300 are commonly green light and red light, for example. In full-color display, blue light, green light, and red light can be set in a ratio of 1:1:1.

[0042] The first light-emitting unit 210 is a first vertical cavity surface emitting laser 211, each of which includes a first bottom reflector 220, an active layer 230 and a first top reflector 240. The light-emitting array 200 is composed of a plurality of independent and closely arranged first light-emitting units 210. The first light-emitting unit 210 can be specifically selected as a first vertical cavity surface emitting laser 211, which includes a first bottom reflector 220, an active layer 230 and a first top reflector 240. The first vertical cavity surface emitting laser 211 is used as the light source of the excitation light to ensure vertical emission of the laser beam and efficient energy conversion. On part or all of the first light-emitting unit 210, a quantum dot vertical cavity surface emitting laser 300 is integrated to realize direct conversion from basic light source to specific color output. Each quantum dot vertical cavity surface emitting laser 300 is composed of a quantum dot layer bottom reflector 310, a quantum dot layer 320 containing a specific type of quantum dot material, and a quantum dot layer top reflector 330, which together form a precise optical resonant cavity. The wavelength of the light amplified by the resonance can accurately match the central wavelength emitted by the quantum dot layer 320, thereby greatly enhancing the output efficiency and purity of the specific color light. The quantum dot vertical cavity surface emitting laser 300 is not a single type, but includes two or more different types of quantum dot vertical cavity surface emitting lasers 300, each type is equipped with a unique quantum dot layer 320, combined with the circuit formed in the substrate 100 to control the light-emitting array 200, and the full-color laser display device is endowed with color richness and precise control capabilities through diversified design. Different types of quantum dot layers 320 can respond to and amplify light of different wavelengths, thereby realizing the direct emission of the three primary colors of red, green and blue and even a wider color range. It simplifies the complex color conversion process in traditional display technology and can significantly improve color saturation and color accuracy.

[0043] It should be particularly emphasized that the specific structure of the light-emitting array 200 of the present application is not limited, and any structure of light-emitting units can be used, combined with the quantum dot vertical cavity surface emitting laser 300 that enters light from the bottom to achieve full-color laser display. In a further preferred embodiment, the first vertical cavity surface emitting laser 211 is selected as the light source at the bottom, and the first vertical cavity surface emitting laser 211 is selected to emit blue light, and the quantum dot layer 320 selects a material that converts blue light into green light and blue light into red light, so that part of the blue light directly emitted by the first vertical cavity surface emitting laser 211 can be retained, combined with the green light and red light converted by the quantum dot vertical cavity surface emitting laser 300, it can achieve full-color display based on the three primary colors of red, green and blue. The excitation light source 212 selects the form of a vertical cavity surface emitting laser to concentrate the wavelength of the excitation light, and the light utilization rate and the concentration of the emission wavelength can be higher when the light excitation quantum dots are excited.

[0044] The full-color laser display device provided in the present application includes a substrate 100 (silicon-based or metal-based), a light-emitting array 200 arranged on the substrate 100, and when a first vertical cavity surface emitting laser 211 is used, it also specifically includes a first bottom reflector 220, an active layer 230, and a first top reflector 240, wherein the first bottom reflector 220 and the first top reflector 240 constitute the optical resonant cavity of the first vertical cavity surface emitting laser 211, and the top reflector and can be composed of a dielectric film DBR, a grating, a photonic crystal, etc., and the quantum dots are divided into green light and red light quantum dots, and red and green quantum dot lasers are prepared based on the optical pumping of the blue light VCSEL. Not only can a high-resolution full-color display be achieved, but also a display product with higher brightness and a wider color gamut can be obtained. The display product prepared by using VCSEL can not only enhance the collimation of the beam, reduce speckle, but also ensure the advantage of low power consumption.

[0045] Specifically, the first vertical cavity surface emitting laser 211 is a blue laser or an ultraviolet laser. Blue lasers have mature manufacturing processes and high luminous efficiency. They occupy a key position in the visible spectrum and are one of the ideal basic light sources for building a full-color display system. Ultraviolet lasers, due to their shorter wavelength characteristics, exhibit higher energy conversion efficiency and a wider color gamut coverage when exciting specific quantum dot materials, making it possible to achieve brighter and more vivid color performance. Selecting a blue or ultraviolet laser as the first vertical cavity surface emitting laser 211 provides a flexible and diverse basic light source option for full-color laser display devices, which can meet the color requirements in different application scenarios, and can also adjust the light source characteristics according to specific design requirements to achieve the best display effect. When ultraviolet lasers are used, the same process is used to prepare blue, green, and red quantum dot vertical cavity surface emitting lasers respectively to achieve a full-color display effect, that is, in the light-emitting array formed by the ultraviolet laser, blue, green, and red quantum dot vertical cavity surface emitting lasers are formed according to the design, and blue, green, and red light are generated by ultraviolet light combined with light conversion quantum dots. Due to the use of a dual vertical cavity surface emitting laser structure, the brightness and energy utilization rate can be greatly improved; when ultraviolet lasers are used, their high energy and short wavelength characteristics can more effectively excite quantum dot materials and produce color output within a wider color gamut. Whether it is blue light or ultraviolet light lasers, due to their efficient photoelectric conversion mechanism and optimized structural design, they can reduce energy consumption while ensuring high brightness and improve overall luminous efficiency. According to the type of basic light source selected (blue light or ultraviolet light), quantum dot materials that are compatible with it and have excellent performance can be selected in a targeted manner to ensure the stable operation and efficient light emission of the quantum dot vertical cavity surface emitting laser 300. This optimization of material compatibility helps to improve the overall performance and reliability of the full-color laser display device.

[0046] In order to fully cover and accurately present the three primary colors of red, green and blue, the quantum dot vertical cavity surface emitting laser 300 in the present full-color laser display device is divided into two categories: green quantum dot VCSEL and red quantum dot VCSEL, that is, the quantum dot vertical cavity surface emitting laser 300 includes green quantum dot VCSEL and red quantum dot VCSEL. By subdividing the quantum dot vertical cavity surface emitting laser 300 into emitting green light and emitting red light, it is possible to directly and efficiently generate red and green lasers, which are combined with the blue light that may come from the first vertical cavity surface emitting laser 211 (if the blue laser is selected as the basic light source), so as to accurately cover and reproduce the three primary colors, greatly improving the accuracy and restoration of the colors. In this way, the blue light provided by the first vertical cavity surface emitting laser 211 is directly used as the blue light in the three primary colors, and only the green quantum dot VCSEL and the red quantum dot VCSEL need to be manufactured, which further simplifies the structure, thereby reducing the manufacturing steps, reducing the complexity of the process and the manufacturing cost. Quantum dot materials, due to their unique size quantum effect and bandgap tunability, can achieve efficient and narrowband light emission at specific wavelengths. This feature makes the light emitted by green quantum dot VCSEL and red quantum dot VCSEL have extremely high color purity and saturation. By integrating different types of quantum dot vertical cavity surface emitting lasers 300, higher flexibility is achieved in design. The proportion and layout of green quantum dot VCSEL and red quantum dot VCSEL can be flexibly adjusted according to specific application scenarios and color requirements to achieve the best color balance and display effect.

[0047] In order to ensure that the full-color laser display device can accurately generate and mix the three primary colors of light, the first light-emitting unit 210 in the present device is designed to have a shorter center wavelength of the emitted light. The center wavelength of the emitted light of the first light-emitting unit 210 is 450nm, the center wavelength of the emitted light of the green quantum dot VCSEL is 520nm, and the center wavelength of the emitted light of the red quantum dot VCSEL is 630nm. By strictly controlling the center wavelength of the emitted light of the first light-emitting unit, the green quantum dot VCSEL, and the red quantum dot VCSEL, it is possible to ensure that the purity and accuracy of the three primary colors of light are essential for achieving high-quality full-color display, and color deviation and color mixing can be avoided, thereby improving the clarity and color accuracy of the image. In this technical solution, in order to ensure the collimation of light, the first light-emitting unit 210 preferably also has a light-emitting structure with high collimation, such as a VCSEL or micro-disk structure.

[0048] In a further technical solution, the first top reflector 230 and the quantum dot layer bottom reflector 310 are of the same layer structure. In a specific implementation process, each layer in the reflector can be manufactured simultaneously, or the quantum dot layer bottom reflector can be omitted to form a micro-disk structure, thereby realizing a laser light emitting structure under the excitation of a whispering gallery mode.

[0049] Selecting the center wavelength of the emitted light with a wavelength of 450nm as the basic light source of the first light-emitting unit 210 is conducive to the energy absorption and conversion of the subsequent quantum dot vertical cavity surface emitting laser 300. The green light quantum dot VCSEL and the red light quantum dot VCSEL can make full use of this high-energy light source to emit light of a specific wavelength through the stimulated radiation process of the quantum dot material, thereby achieving efficient and stable energy conversion. By precisely controlling the center wavelength of the emitted light of the three-color light source, a wider color gamut range can be covered. This wide color gamut coverage capability enables the full-color laser display device to present richer and more delicate color changes.

[0050] In terms of fine layout, the number of the first vertical cavity surface emitting laser 211 (using only blue light, which can be called "basic blue light VCSEL"), the green light quantum dot VCSEL and the red light quantum dot VCSEL in the array without forming the quantum dot vertical cavity surface emitting laser 300 is precisely controlled to be the same. This balanced configuration helps to achieve uniformity and stability of color output. The arrangement of these lasers on the substrate 100 is optimized to be arranged in sequence, that is, arranged in a cycle in the order of basic blue light VCSEL, green light quantum dot VCSEL300, and red light quantum dot VCSEL300. This orderly arrangement not only simplifies the manufacturing process, but also improves the color consistency between pixels, which helps to achieve a more delicate and coherent image display effect.

[0051] In order to achieve a more compact and efficient optical structure design, the quantum dot vertical cavity surface emitting laser 300 is formed on the light exit hole 250 of the first vertical cavity surface emitting laser 211. The two optical elements with different functions are seamlessly integrated in space, so that the two components that originally needed to be set up independently are combined into one, forming a new laser emission unit with composite functions. For example, the green light quantum dot VCSEL and the red light quantum dot VCSEL are precisely grown above the light exit hole 250 of the first vertical cavity surface emitting laser 211 at specific positions, respectively, ensuring that the outgoing light from the first vertical cavity surface emitting laser 211 can be directly received and converted, thereby emitting pure and efficient green light and red light. By directly integrating the quantum dot vertical cavity surface emitting laser 300 on the light exit hole 250 of the first vertical cavity surface emitting laser 211, space resources are saved, the compactness and integration of the optical structure are improved, and the volume and weight of the overall display device are reduced. Since the quantum dot vertical cavity surface emitting laser 300 is directly located on the light exit path of the first vertical cavity surface emitting laser 211, no additional optical elements or complex optical path design are required to achieve efficient conversion and transmission of light energy. This simplified optical path design not only reduces the loss of light during transmission, but also improves the energy conversion efficiency of the overall optical system, so that the full-color laser display device can emit brighter and purer color light at the same power consumption.

[0052] In order to optimize the optical performance and improve the efficiency of light energy utilization, the size of the quantum dot layer bottom reflector 310 is larger than the size of the light exit hole 250 of the first vertical cavity surface emitting laser 211. By increasing the size of the quantum dot layer bottom reflector 310, it can completely cover the light exit hole 250 of the first vertical cavity surface emitting laser 211, effectively reducing the leakage and scattering of light, improving the collection efficiency of light energy on the reflector, so that more light can be reflected and guided to the quantum dot vertical cavity surface emitting laser 300, and then converted into the required green light and red light, thereby improving the overall light energy utilization efficiency.

[0053] In order to further optimize the optical performance and ensure the efficient use of light energy, the size of the quantum dot layer 320 is the same as the size of the second reflector, and the size of the quantum dot layer top reflector 330 is larger than the size of the quantum dot layer 320. The design that the quantum dot layer 320 and the quantum dot layer reflector 310 are the same size ensures that the light can be completely and evenly irradiated on the quantum dot layer 320, thereby maximizing the absorption and conversion efficiency of light energy in the quantum dot layer 320. This design reduces the waste and scattering of light, so that more light energy can be converted into the required green and red light. The design that the size of the quantum dot layer top reflector 330 is larger than that of the quantum dot layer 320 reflects the light emitted from the edge back into the resonant cavity, enhances the resonance effect in the resonant cavity, makes more photons reflect and amplify multiple times in the cavity, and improves the emission intensity of the laser. At the same time, the increased reflector area also reduces the scattering and leakage of light at the edge, thereby further improving the coherence of the wavelength of the emitted light and the stability of the laser emission.

[0054] Specifically, the thickness of the quantum dot layer 320 is half the wavelength of the light resonantly amplified by the optical resonant cavity (1 / 2λ0, λ0 is the center wavelength of the outgoing light). This precise design enables the quantum dot layer 320 to serve as a key element in the optical resonant cavity, and to form a perfect resonant condition with the upper and lower reflectors, thereby maximizing and amplifying the outgoing intensity of the laser. At the same time, the quantum dot layer 320 serves as a medium for converting light energy to light of a specific wavelength, and this specific proportional relationship between its thickness and the wavelength of light also helps to improve the efficiency and purity of color conversion. The thickness of the quantum dot layer 320 is set to half the wavelength of light (1 / 2λ0, λ0 is the center wavelength of the outgoing light), which is a careful calculation based on the principle of optical resonance. This design enables the quantum dot layer 320 to serve as a half-wavelength node in the resonant cavity, and to form the best resonant condition with the upper and lower reflectors. In this resonant state, photons can form a stable standing wave in the cavity, and after multiple reflections and amplifications, the outgoing intensity and directionality of the laser can be significantly improved.

[0055] Specifically, the material system of the quantum dot layer 320 is selected from CdSe, CdTe, CdS, ZnSe, ZnTe, ZnS, CuInS, CuInSeS, AgInS, AgInSeS, InP, CuZnSe, ZnMnSe, PbS, PbSe, Cd-based alloy materials, In-based alloy materials, Zn-based alloy materials or perovskite materials.

[0056] In addition, the present application also provides a method for manufacturing a full-color laser display device, including: manufacturing a plurality of first light-emitting units 210 arranged in an array on a substrate 100 to form a light-emitting array 200, depositing a quantum dot layer bottom reflector 310, a quantum dot layer 320 and a quantum dot layer top reflector 330 on part or all of the first light-emitting units 210 in the light-emitting array 200, and forming a quantum dot vertical cavity surface emitting laser 300 on the first light-emitting unit 210. An optical resonant cavity is formed between the quantum dot layer bottom reflector 310 and the quantum dot layer top reflector 330, the wavelength of the light resonantly amplified by the optical resonant cavity is the same as the central wavelength of the emitted light of the quantum dot layer 320, and the quantum dot layer 320 includes two or more different types of quantum dots to form two or more different types of quantum dot vertical cavity surface emitting lasers 300.

[0057] The present application proposes a method for manufacturing a full-color laser display device, taking the first vertical cavity surface emitting laser 211 as the first light emitting unit 210 as an example, the specific process can be referred to Figure 3, the method combines the precision optical component manufacturing and advanced material deposition technology to achieve high-efficiency, high-purity full-color laser output. First, through high-precision lithography, coating and substrate transfer processes, a plurality of first vertical cavity surface emitting lasers 211 including a first bottom reflector 220, an active layer 230 and a first top reflector 240 are manufactured, wherein a substrate 100 is used as a rigid support substrate, and these VCSELs are arranged in an array according to a specific layout. For some or all units in the VCSEL array, a fine quantum dot vertical cavity surface emitting laser 300 construction process is implemented, and a quantum dot bottom reflector 310 is deposited on the selected VCSEL. The reflector must not only have a high reflectivity to ensure the effective recovery of light energy, but also have surface properties compatible with the subsequent quantum dot layer 320. Subsequently, using quantum dot synthesis and deposition technology, a quantum dot layer 320 containing two or more different types of quantum dots is precisely deposited on the second bottom reflector 310. These quantum dots are carefully designed and screened to respond to and convert specific wavelengths of light to form laser outputs of multiple colors such as green and red. Finally, a quantum dot layer top reflector 330 is deposited on the quantum dot layer bottom reflector 310 and the quantum dot layer 320 to complete the preparation of the optical resonant cavity. The wavelength of the resonantly amplified light is precisely matched with the center wavelength of the emitted light of the quantum dot layer 320, thereby achieving the maximum utilization of light energy in the resonant cavity and a significant enhancement of the laser intensity. Through these steps, a quantum dot VCSEL 300 integrating high-efficiency, high-purity, and multi-color laser output is constructed. By constructing a quantum dot VCSEL 300 based on the first vertical cavity surface emitting laser 211, a leap from a single light source to full-color laser output is achieved. The multi-type design of the quantum dot layer 320 ensures the output of multiple colors of lasers such as green and red, meeting the needs of full-color display. By precisely designing the structure and parameters of the optical resonant cavity, precise regulation of the wavelength of the resonantly amplified light is achieved. This regulation not only improves the emission intensity and directionality of the laser, but also ensures the efficient luminescence and color purity of the quantum dot layer 320. This manufacturing method is not only suitable for current full-color laser display devices, but also has high design flexibility and scalability. By adjusting parameters such as quantum dot type, quantity and arrangement, the laser performance and color expression can be further optimized to meet the needs of different application scenarios.

[0058] In the process of manufacturing a full-color laser display device, in order to accurately control the formation positions of different types of quantum dot vertical cavity surface emitting lasers 300 and eliminate the interference between different quantum dot vertical cavity surface emitting lasers 300, the steps of manufacturing different types of quantum dot vertical cavity surface emitting lasers 300 specifically include: before forming a type of quantum dot vertical cavity surface emitting laser 300, a mask 340 is formed at a position outside the area where the quantum dot VCSEL 300 of this type is formed, and on the basis of the mask 340 protecting other areas, the corresponding type of quantum dot vertical cavity surface emitting laser 300 is formed. Under the premise that the mask 340 protects the non-target area, the corresponding type of quantum dot material is accurately deposited in the exposed area where the quantum dot vertical cavity surface emitting laser 300 needs to be formed, and the deposition rate, thickness, and type and concentration of the quantum dot material are controlled to ensure that the quality and performance of the quantum dot layer 320 meet expectations. After the deposition of the quantum dot layer 320 is completed, the quantum dot layer top reflector 330 is manufactured to close the optical resonant cavity and protect the quantum dot layer 320. At this time, due to the presence of the mask 340 , the surface of the non-target area remains clean and undisturbed, which facilitates the subsequent production of other types of quantum dot vertical cavity surface emitting lasers 300 or the integration of other components on the substrate 100 that may be required.

[0059] exist Figure 3 In the specific process shown, a quantum dot layer bottom emitting mirror, a quantum dot layer, and a quantum dot layer top reflecting mirror are first deposited on the first light-emitting unit in the light-emitting array to prepare a green quantum dot vertical cavity surface emitting laser and a red bottom reflecting mirror. Then, a mask is deposited at the light exit hole of the prepared green quantum dot vertical cavity surface emitting laser. The mask is used to protect the light-emitting layer of the quantum dot VCSEL from the influence of photolithography, so as to avoid the degradation of the performance of the quantum dot light-emitting layer due to photolithography. After the mask deposition is completed, a quantum dot layer and a quantum dot layer top reflecting mirror are deposited on the red bottom reflecting mirror to prepare a red quantum dot vertical cavity surface emitting laser, and the mask is removed to obtain a red, green, and blue VCSEL full-color display. Of course, Figure 3 The specific process shown in is an option. In other specific preparations, you can also choose to first make a red light quantum dot vertical cavity surface emitting laser.

[0060] Specifically, the mask 340 is formed on the quantum dot layer top reflector 330 and the first top reflector 240 of other types of the quantum dot vertical cavity surface emitting laser 211. By forming the mask 340 on the quantum dot layer top reflector 330 and (or) the first top reflector 240, the layout of the quantum dot vertical cavity surface emitting laser 300 can be more accurately controlled to ensure that each unit is accurately located at the predetermined position. At the same time, this layout method also increases the flexibility of the design, allowing us to adjust or modify the VCSEL structure of a specific area according to actual needs. Accurate control of the mask 340 reduces the performance degradation caused by material diffusion or contamination, thereby improving the performance stability and consistency of each quantum dot vertical cavity surface emitting laser 300 unit.

[0061] Specifically, the central wavelength of the output light of the active layer 230 is 450 nm, and the output light of the quantum dot layer 320 includes light with central wavelengths of 520 nm and 630 nm, respectively. The control of the relevant wavelengths is consistent with the above-mentioned relevant functions.

[0062] Specifically, the quantum dot layer 320 with a central wavelength of 520nm for the emitted light is first formed. The quantum dot layer 320 with a central wavelength of 520nm for the emitted light is preferentially formed, which directly corresponds to the green light band, which is crucial for the color accuracy and richness of the full-color laser display device. The accurate reproduction of green light helps to balance the brightness and saturation between the three primary colors of red, green and blue, thereby presenting a more natural and vivid color effect. By precisely controlling the size and composition of the quantum dots, the optical properties of the quantum dot layer 320 can be finely controlled to ensure efficient light emission of the quantum dot layer 320 at a specific wavelength. The resonance amplification effect of the optical resonant cavity is further improved by optimizing the interface quality between the quantum dot layer 320 and the reflector, thereby enhancing the emission intensity and directionality of the laser.

[0063] Specifically, the thickness of the quantum dot layer 320 is half the central wavelength of the light emitted from the quantum dot layer 320 (1 / 2λ0, λ0 is the central wavelength of the light emitted). The thickness of the quantum dot layer 320 is set to half the wavelength of the light (1 / 2λ0, λ0 is the central wavelength of the light emitted), which is a careful calculation based on the principle of optical resonance. This design enables the quantum dot layer 320 to serve as a half-wavelength node in the resonant cavity, forming the best resonance condition with the upper and lower reflectors.

[0064] The technical solution of the present application is described in detail below with a specific implementation method. The structural diagram of each step can be found in Figure 4 .

[0065] First, prepare a blue light VCSEL chip array, whose substrate can be sapphire, silicon, copper, nitride and other substrates; the reflector of the blue light VCSEL chip can be a dielectric film DBR, nitride DBR, air gap DBR, grating, etc., and the reflectivity of the bottom reflector reaches more than 99.9%, and the reflectivity of the top reflector is ~99.8%; the active layer can be a multi-quantum well or quantum dot, and its structure can be a planar cavity or a convex cavity, and the light can be emitted from the n-side or the p-side.

[0066] Secondly, reflectors with central wavelengths of 520 nm and 630 nm are deposited on adjacent light-emitting holes of the blue VCSEL using photolithography or mask technology. The reflectors include dielectric film DBR, nitride DBR or grating, and their reflectivity reaches 99.8%. The size of the reflector is larger than the size of the blue VCSEL light-emitting hole.

[0067] Then, the green quantum dots are coated on the light-emitting hole of the adjacent blue VCSEL by spin coating and photolithography. By absorbing the excitation of the blue laser, the green light with a central wavelength of 520 nm can be pumped. In order to prepare a single-mode green VCSEL, the thickness of the green quantum dot layer (active layer) is 1 / 2λ. 0 ,λ 0 The central wavelength is ~520 nm; the green light quantum dot layer is similar in size to the bottom reflector.

[0068] Subsequently, a top reflector is deposited on the green quantum dots through a mask process, and together with the bottom reflector, a resonant cavity is formed to complete the preparation of the green quantum dot VCSEL. Among them, the reflectivity of the top reflector is slightly lower than that of the bottom reflector; the size of the top reflector is slightly larger than the green quantum dot layer to ensure that the green quantum dots can be wrapped. A layer of chromium metal mask is then deposited on the top reflector to protect the quantum dots.

[0069] Furthermore, the same process is used to coat a red light quantum dot layer on a reflector with a central wavelength of 630 nm. By absorbing the excitation of a blue light laser, a red light with a central wavelength of 630 nm can be pumped. Among them, the thickness of the red light quantum dot layer is 1 / 2λ0, λ0 is the central wavelength, which is selected as 630 nm; the size of the red light quantum dot layer is similar to that of the bottom reflector. The material type of red and green light quantum dots can be typeⅠ or typeⅡ, and the core-shell size can be adjusted according to the material; then, the top reflector is deposited on the red light quantum dot layer by the same method, and a resonant cavity is formed with the bottom reflector to prepare a red light quantum dot VCSEL. Among them, the emissivity of the top reflector is slightly smaller than that of the bottom reflector; the size of the top reflector is slightly larger than that of the red light quantum dot layer. Finally, the mask metal Cr is removed by wet etching to obtain a laser chip with RGB luminescence, and finally the preparation of a full-color laser display device is completed.

[0070] The preparation process used in the above specific scheme is mainly based on photolithography and masking. Other similar methods can also be used to obtain corresponding quantum dots or blue light chips to achieve full-color display or full-color laser display, which is also within the scope of protection.

[0071] As can be seen from the foregoing, the present application proposes a high-efficiency, high-purity full-color laser display device and a method for manufacturing the same. The device consists of a substrate, a VCSEL array, and various types of quantum dot VCSELs. The VCSEL array includes a plurality of independent and closely arranged first vertical cavity surface emitting lasers, each of which is equipped with a first bottom reflector, an active layer, and a first top reflector to ensure vertical emission and efficient energy conversion of the laser beam. On part or all of the first VCSEL, a quantum dot VCSEL is constructed by depositing a second bottom reflector, a specific type of quantum dot layer, and a second top reflector to form an optical resonant cavity. The wavelength of the resonantly amplified light is precisely matched with the central wavelength of the light emitted by the quantum dot layer, thereby achieving laser output of multiple colors.

[0072] Quantum dot VCSELs include two or more types, each equipped with a quantum dot layer that can emit light of different wavelengths, such as green quantum dot VCSELs (with a central wavelength of 520nm for the emitted light) and red quantum dot VCSELs (with a central wavelength of 630nm for the emitted light), combined with the blue light that may come from the first VCSEL (if a blue laser is used), to cover and accurately present the three primary colors of red, green and blue, and achieve full-color display. The central wavelength of the emitted light of the first VCSEL is 450nm, which is conducive to the energy absorption and conversion of the quantum dot VCSEL.

[0073] During the manufacturing process, high-precision lithography, coating, quantum dot synthesis and deposition technology are used. Masks are used to protect non-target areas, and the formation position and type of quantum dot VCSELs are precisely controlled to ensure the stability and consistency of the performance of each unit. The thickness of the quantum dot layer is designed to be half the central wavelength of the emitted light (1 / 2λ0, λ0 is the central wavelength of the emitted light) to maximize the optical resonance effect and improve the laser emission intensity and directionality. The technical solution of this application not only simplifies the color conversion process in traditional display technology, but also significantly improves color saturation, accuracy and color gamut coverage, while maintaining the advantages of low power consumption and high beam collimation, and is suitable for a variety of application scenarios.

[0074] The above is only a specific implementation of the present application, and any other improvements made based on the concept of the present application are deemed to be within the protection scope of the present application.

Claims

1. A quantum dot vertical cavity surface emitting laser, characterized in that: It includes an excitation light source, a quantum dot layer bottom reflector, a quantum dot layer and a quantum dot layer top reflector, wherein the quantum dot layer bottom reflector, the quantum dot layer and the quantum dot layer top reflector are stacked in sequence; The quantum dot layer includes light-converting luminescent quantum dots, which receive light from an excitation light source and convert it into light of another wavelength, an optical resonant cavity is formed between the bottom reflector of the quantum dot layer and the top reflector of the quantum dot layer, and the wavelength of the light resonantly amplified by the optical resonant cavity is the same as the central wavelength of the output light of the quantum dot layer; The quantum dot layer bottom reflector is formed on the excitation light source, and the light from the excitation light source enters the optical resonant cavity through the quantum dot layer bottom reflector.

2. The quantum dot vertical cavity surface emitting laser according to claim 1, characterized in that: The light-converting luminescent quantum dots are down-converting luminescent quantum dots.

3. The quantum dot vertical cavity surface emitting laser according to claim 2, characterized in that: The light emitted by the excitation light source is blue light or ultraviolet light, and the output light of the down-conversion luminescent quantum dots is green light or red light.

4. The quantum dot vertical cavity surface emitting laser according to claim 1, characterized in that: The excitation light source includes a vertical cavity surface emitting laser structure.

5. A full-color laser display device, characterized in that: It includes a substrate, a light emitting array, and a quantum dot vertical cavity surface emitting laser; The light emitting array comprises a plurality of first light emitting units arranged in an array; The quantum dot vertical cavity surface emitting lasers are formed on part or all of the first light-emitting units, each of which includes a quantum dot layer bottom reflector, a quantum dot layer and a quantum dot layer top reflector, an optical resonant cavity is formed between the quantum dot layer bottom reflector and the quantum dot layer top reflector, and the wavelength of the light resonantly amplified by the optical resonant cavity is the same as the central wavelength of the output light of the quantum dot layer; Among them, there are more than two different types of quantum dot vertical cavity surface emitting lasers, and different types of quantum dot vertical cavity surface emitting lasers have different quantum dot layers.

6. The full-color laser display device according to claim 5, characterized in that: The first light emitting units are first vertical cavity surface emitting lasers, and each of the first vertical cavity surface emitting lasers includes a first bottom reflecting mirror, an active layer and a first top reflecting mirror.

7. The full-color laser display device according to claim 6, characterized in that: The first top reflector and the quantum dot layer bottom reflector are in the same layer structure.

8. The full-color laser display device according to claim 6, characterized in that: The first vertical cavity surface emitting laser is a blue light laser or an ultraviolet light laser.

9. The full-color laser display device according to claim 8, characterized in that: The output light of the quantum dot layer in the quantum dot vertical cavity surface emitting laser includes green light and red light.

10. The full-color laser display device according to claim 9, characterized in that: The center wavelength of the emitted light of the first vertical cavity surface emitting laser is 450nm, the center wavelength of the green light is 520nm, and the center wavelength of the red light is 630nm.

11. The full-color laser display device according to claim 10, characterized in that: The number of first VCSELs without forming the quantum dot VCSEL, the number of quantum dot VCSELs emitting green light, and the number of quantum dot VCSELs emitting red light are the same.

12. The full-color laser display device according to claim 6, characterized in that: The quantum dot vertical cavity surface emitting laser is formed on the light exit hole of the first vertical cavity surface emitting laser.

13. The full-color laser display device according to claim 12, characterized in that: The size of the quantum dot layer bottom reflector is larger than the size of the light exit hole of the first vertical cavity surface emitting laser.

14. The full-color laser display device according to claim 13, characterized in that: The size of the quantum dot layer is the same as the size of the bottom reflector of the quantum dot layer, and the size of the top reflector of the quantum dot layer is larger than the size of the quantum dot layer.

15. A method for manufacturing a full-color laser display device, characterized in that: include: Manufacturing a plurality of first light-emitting units arranged in an array on a substrate to form a light-emitting array; Depositing a quantum dot layer bottom reflector, a quantum dot layer, and a quantum dot layer top reflector on part or all of the first light-emitting units in the light-emitting array to form a quantum dot vertical cavity surface emitting laser on the first light-emitting unit; An optical resonant cavity is formed between the bottom reflector of the quantum dot layer and the top reflector of the quantum dot layer, the wavelength of light resonantly amplified by the optical resonant cavity is the same as the central wavelength of the output light of the quantum dot layer, and the quantum dot layer includes more than two different types of quantum dots to form more than two different types of quantum dot vertical cavity surface emitting lasers.

16. The method for manufacturing a full-color laser display device according to claim 15, characterized in that: The steps of making different types of quantum dot vertical cavity surface emitting lasers specifically include: Before forming one type of the quantum dot vertical cavity surface emitting laser, a mask is formed at a position outside the area where the quantum dot vertical cavity surface emitting laser of that type is formed to form the quantum dot vertical cavity surface emitting laser of the corresponding type.

17. The method for manufacturing a full-color laser display device according to claim 16, characterized in that: The first light-emitting unit is a first vertical cavity surface emitting laser, and the specific manufacturing process includes: forming a first bottom reflector, an active layer and a first top reflector in sequence.

18. The method for manufacturing a full-color laser display device according to claim 17, characterized in that: The mask is formed on the quantum dot layer top reflector and / or on the first top reflector.

19. The method for manufacturing a full-color laser display device according to claim 17, characterized in that: The central wavelength of the output light of the active layer is 450 nm, and the output light of the quantum dot layer includes light with central wavelengths of 520 nm and 630 nm respectively.

20. The method for manufacturing a full-color laser display device according to claim 19, characterized in that: First, the quantum dot layer with the center wavelength of the emitted light being 520 nm is formed.

21. The method for manufacturing a full-color laser display device according to claim 19, characterized in that: The thickness of the quantum dot layer is controlled to be half of the central wavelength of the light emitted from the quantum dot layer.

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