Light-emitting element

Abstract

The invention discloses a light-emitting element. The light-emitting element comprises a first semiconductor layer; the semiconductor platform comprises an active layer and a second semiconductor layer, and comprises a slope connected with the first semiconductor layer; a contact electrode covering the second semiconductor layer and including an upper surface; the reflecting structure comprises an insulating reflecting mirror and an insulating layer positioned between the contact electrode and the insulating reflecting mirror, the reflecting structure comprises a reflecting structure opening, and the reflecting structure opening comprises a first side surface and a second side surface; a connection layer covering the reflective structure and filling the reflective structure opening; and a metal reflection layer covering the connection layer and filling the reflection structure opening, in a side view of the light emitting element, a first portion of the first side surface projected on the upper surface of the contact electrode includes a first length, a second portion of the second side surface projected on the upper surface includes a second length, and the first length is smaller than the second length.

Description

Technical Field

[0001] The invention relates to a light-emitting element, and in particular to a flip-chip light-emitting element comprising a metal reflection layer and a reflection structure. Background Art

[0002] Light-Emitting Diode (LED) is a solid-state semiconductor light-emitting element with the advantages of low power consumption, low heat generation, long service life, shock resistance, small size, fast response speed and good photoelectric properties, such as stable light emission wavelength. Therefore, LEDs are widely used in household appliances, equipment indicator lights, and optoelectronic products. Summary of the invention

[0003] A light-emitting element comprises a first semiconductor layer; a semiconductor platform comprises an active layer and a second semiconductor layer, and comprises an inclined surface connected to the first semiconductor layer; a contact electrode covers the second semiconductor layer and comprises an upper surface; a reflective structure comprises an insulating reflector, and an insulating layer is located between the contact electrode and the insulating reflector, wherein the reflective structure comprises a reflective structure opening, and the reflective structure opening comprises a first side surface and a second side surface; a connecting layer covers the reflective structure and fills the reflective structure opening; and a metal reflective layer covers the connecting layer and fills the reflective structure opening, wherein in a side view of the light-emitting element, a first portion of the first side surface projected on the upper surface of the contact electrode comprises a first length, a second portion of the second side surface projected on the upper surface comprises a second length, and the first length is smaller than the second length. BRIEF DESCRIPTION OF THE DRAWINGS

[0004] The following will be described in detail with reference to the accompanying drawings. It should be noted that the various characteristic components are not drawn to scale and are only used for illustration. In fact, the size of the components may be enlarged or reduced to clearly show the technical features of the embodiments of the present invention.

[0005] Figure 1 A top view of a light emitting element 1 disclosed in an embodiment of the present invention;

[0006] Figure 2 For along Figure 1 A cross-sectional view of the tangent line L-L';

[0007] Figure 3 for Figure 1 A partial enlarged view of the area A indicated by the dotted line;

[0008] Figure 4 For along Figure 3 The cross-sectional view of the tangent line X-X';

[0009] Figure 5A to Figure 5DA cross-sectional view of a method for manufacturing a reflective structure opening of a light-emitting element 1 according to an embodiment of the present invention;

[0010] Figure 6A to Figure 6B A cross-sectional view of a method for manufacturing a first reflective structure opening of a light-emitting element 1 according to an embodiment of the present invention;

[0011] Fig. 7A A side view of an opening of a reflective structure disclosed in one embodiment of the present invention;

[0012] Figure 7B for Fig. 7A A partial enlarged view of the opening of the first reflective structure in region B indicated by a dotted line;

[0013] Figure 8 Another embodiment of the present invention discloses Fig. 7A A partial enlarged view of the opening of the first reflective structure in region B indicated by a dotted line;

[0014] Figures 9A to 9C A partial top view of a light emitting element 1 disclosed in one embodiment of the present invention;

[0015] Fig.10 is a schematic diagram of a light emitting device 2 according to an embodiment of the present invention;

[0016] Fig.11 is a schematic diagram of a light emitting device 3 according to an embodiment of the present invention;

[0017] Fig.12 is a schematic diagram of a backlight module 4 according to an embodiment of the present invention;

[0018] Fig.13 is a schematic diagram of a display 5 according to an embodiment of the present invention;

[0019] Fig.14 is a schematic diagram of a light emitting device 6 according to an embodiment of the present invention;

[0020] Fig.15 FIG. 1 is a schematic diagram of a light emitting device 7 according to an embodiment of the present invention.

[0021] Explanation of symbols

[0022] 1: Light-emitting element

[0023] 2: Light-emitting device

[0024] 3: Light-emitting device

[0025] 4: Backlight module

[0026] 5: Display

[0027] 6: Light-emitting device

[0028] 7: Light-emitting device

[0029] 10: Substrate

[0030] 10s: upper surface

[0031] 10t: light emitting surface

[0032] 11: First side

[0033] 12: Second side

[0034] 13: The third side

[0035] 14: The Fourth Side

[0036] 20: Semiconductor structure

[0037] 20b: upper surface of the first recessed area E1

[0038] 20b': upper surface of the second recessed area E2

[0039] 20t: upper surface of semiconductor platform M

[0040] 21: First semiconductor layer

[0041] 21t: upper surface of the first semiconductor layer 21

[0042] 22: Active layer

[0043] 23: Second semiconductor layer

[0044] 23t: upper surface of the second semiconductor layer 23

[0045] 201: First Frame

[0046] 202: LCD panel

[0047] 2000: Bracket

[0048] 30: Contact electrode

[0049] 30t: Upper surface

[0050] 310: Brightening film

[0051] 3000: Luminous board

[0052] 40: Reflective Structure

[0053] 400: Reflective structure opening

[0054] 4001: Part 1

[0055] 4002: Part 2

[0056] 41: Insulated reflector

[0057] 410: first reflective structure opening

[0058] 410b: First bottom

[0059] 410t: First Top

[0060] 420: second reflective structure opening

[0061] 411: Contact structure opening

[0062] 411w: Width

[0063] 42: Insulation layer

[0064] 42s: Upper surface of insulation layer

[0065] 420b: Second bottom

[0066] 420t: Second top

[0067] 4100: The first LED chip

[0068] 4200: Second LED chip

[0069] 43: Dielectric layer

[0070] 430: Optical module

[0071] 4300: Long column lamp post

[0072] 4400: Driver power circuit board

[0073] 50: Package substrate

[0074] 51: Connection layer

[0075] 52: Metal reflective layer

[0076] 521: First Metal Part

[0077] 522: Second metal part

[0078] 53: Insulation

[0079] 54: Reflective Structure

[0080] 500: Light emitting module assembly

[0081] 501: First gasket

[0082] 502: Second gasket

[0083] 5000: Car lighting

[0084] 5100: Main lighting

[0085] 5200: Combination lighting

[0086] 60: Second insulation layer

[0087] 600: Light emitting module

[0088] 601: second insulating layer first opening

[0089] 601w: opening width

[0090] 602: second opening of the second insulating layer

[0091] 604: Reflector

[0092] 606: Bearing part

[0093] 608: Light emitting unit

[0094] 610: Wavelength conversion structure

[0095] 611: Lamp holder

[0096] 612: Lampshade

[0097] 614: Heat sink

[0098] 616: Connection

[0099] 618: Electrical connection components

[0100] 71: First extension electrode

[0101] 72: Second extension electrode

[0102] 700: Second frame

[0103] 80: Protective layer

[0104] 801: First opening of the protective layer

[0105] 802: Second opening of protective layer

[0106] 91: First electrode pad

[0107] 92: Second electrode pad

[0108] B1: First Boundary

[0109] B2: Second Boundary

[0110] CT1: First Contact First Area

[0111] CT1': First contact second area

[0112] CT2: Second contact area

[0113] D1: First shortest distance

[0114] D2: Second shortest distance

[0115] E1: First concave area

[0116] E2: Second concave area

[0117] H1: First height

[0118] H2: Second height

[0119] L1: first length

[0120] L2: Second length

[0121] M: Semiconductor Platform

[0122] P1: Part 1

[0123] P2: Part 2

[0124] S: slope

[0125] Smax: minimum distance

[0126] Sn: Sub-side surface

[0127] S1: First side surface

[0128] S2: Second side surface

[0129] S3: Third side surface

[0130] T1: First thickness

[0131] T2: Second thickness

[0132] W1: First opening width

[0133] W2: Second opening width

[0134] W: minimum width

[0135] θ1: First acute angle

[0136] θ2: Second acute angle

[0137] θ3: The third acute angle DETAILED DESCRIPTION

[0138] The following disclosure provides many different embodiments to implement the different features of the present invention. The following disclosure describes specific examples of each component and its arrangement to simplify the description. Of course, these specific examples are not intended to be limiting. For example, if an embodiment of the present invention describes a first characteristic component formed on or above a second characteristic component, it means that it may include an embodiment in which the first characteristic component and the second characteristic component are in direct contact, and may also include an embodiment in which an additional characteristic component is formed between the first characteristic component and the second characteristic component, so that the first characteristic component and the second characteristic component may not be in direct contact.

[0139] It should be understood that additional operating steps may be implemented before, during or after the method, and in other embodiments of the method, some operating steps may be replaced or omitted.

[0140] In addition, spatially related terms may be used, such as "below", "below", "lower", "above", "above", "higher" and similar terms. These spatially related terms are for the purpose of describing the relationship between one (or some) element or feature and another (or some) element or feature in the figure. These spatially related terms include different orientations of the device in use or operation, as well as the orientations described in the drawings. When the device is turned to a different orientation (rotated 45 degrees or other orientations), the spatially related adjectives used therein will also be interpreted according to the orientation after the rotation. Furthermore, when it is mentioned that a first material layer is located on or above a second material layer, it includes the situation where the first material layer is in direct contact with the second material layer, or there may be one or more other material layers in between. In this case, the first material layer and the second material layer may not be in direct contact. In some embodiments of the present invention, terms such as "connection", "interconnection", etc., related to bonding and connection, unless otherwise defined, may refer to two structures being in direct contact, or may also refer to two structures not being in direct contact, wherein another structure is disposed between the two structures. Moreover, such terms related to bonding and connection may also include the situation where both structures are movable, or both structures are fixed.

[0141] In the specification, the terms "about", "approximately", "roughly", "substantially", "same", and "similar" generally indicate that a characteristic value is within plus or minus 15%, plus or minus 10%, plus or minus 5%, plus or minus 3%, plus or minus 2%, plus or minus 1%, or plus or minus 0.5% of a given value. The quantity given here is an approximate quantity, that is, in the absence of specific description of "about", "approximately", "roughly", "substantially", the meanings of "about", "approximately", "roughly", "substantially" can still be implied.

[0142] It should be understood that although the terms "first", "second", "third", etc. are used herein to describe different elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms can only be used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Therefore, without departing from the technology of the present invention, the first element, component, region, layer or section discussed below can be referred to as a second element, component, region, layer or section.

[0143] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meanings as those commonly understood by those skilled in the art to which this disclosure belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the relevant technology and the present invention, and should not be interpreted in an idealized or overly formal manner unless specifically defined in the embodiments of the present invention.

[0144] Figure 1 It is a top view of a light emitting element 1 disclosed in an embodiment of the present invention. Figure 2 It is along Figure 1 Sectional view of the tangent line L-L'. Figure 3 yes Figure 1 A top view of the reflective structure opening 400 within the area A indicated by the dotted line. Figure 4 It is along Figure 3 Sectional view of the tangent line X-X'.

[0145] refer to Figure 1 , Figure 2 , Figure 3 as well as Figure 4According to an embodiment, a light emitting element 1 comprises a substrate 10 having an upper surface 10s, a first semiconductor layer 21 located on the upper surface 10s of the substrate 10, and a semiconductor platform M located on the first semiconductor layer 21. The semiconductor platform M comprises an active layer 22 and a second semiconductor layer 23, and a slope S is connected to the first semiconductor layer 21. A contact electrode 30 is located on the second semiconductor layer 23. A reflective structure 40 is located on the contact electrode 30, comprising one or more reflective structure openings 400 to expose the contact electrode 30, and one or more contact structure openings 411 to expose the first semiconductor layer 21. A connection layer 51 covers the reflective structure 40 and fills in one or more reflective structure openings 400. A metal reflective layer 52 is located on the connection layer 51 and fills in one or more reflective structure openings 400. A second insulating layer 60 covers the connection layer 51, the metal reflective layer 52 and the reflective structure 40, and includes a second insulating layer first opening 601 located on the first semiconductor layer 21 and a second insulating layer second opening 602 located on the metal reflective layer 52. A first extended electrode 71 covers the semiconductor platform M and covers the second insulating layer first opening 601. A second extended electrode 72 covers the semiconductor platform M and covers the second insulating layer second opening 602. A protective layer 80 covers the first extended electrode 71 and the second extended electrode 72, and includes a protective layer first opening 801 located on the first extended electrode 71 and a protective layer second opening 802 located on the second extended electrode 72. A first electrode pad 91 covers the protective layer first opening 801 and is electrically connected to the first semiconductor layer 21 through the first extended electrode 71. A second electrode pad 92 covers the protective layer second opening 802 and is electrically connected to the second semiconductor layer 23 through the second extended electrode 72.

[0146] The substrate 10 may be a growth substrate for epitaxially growing a semiconductor structure 20. In one embodiment, the semiconductor structure 20 includes a first semiconductor layer 21, an active layer 22, and a second semiconductor layer 23. The substrate 10 includes a gallium arsenide (GaAs) wafer for epitaxially growing aluminum gallium indium phosphide (AlGaInP), or a sapphire (Al2O3) wafer, a gallium nitride (GaN) wafer, a silicon carbide (SiC) wafer, or an aluminum nitride (AlN) wafer for growing gallium nitride (GaN), indium gallium nitride (InGaN), or aluminum gallium nitride (AlGaN).

[0147] In one embodiment of the present invention, the light emitting element 1 may not have the substrate 10. For example, the substrate 10 may be a growth substrate for growing the semiconductor structure 20, and then the substrate 10 and the semiconductor structure 20 may be separated by laser lift off or chemical lift off.

[0148] In one embodiment of the present invention, a semiconductor structure 20 having optoelectronic properties, such as a light-emitting stack, is formed on a substrate 10 by metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor phase deposition (HVPE), physical vapor deposition (PVD), or ion plating, wherein the physical vapor deposition method includes sputtering or evaporation.

[0149] The wavelength of light emitted by the light emitting element 1 can be adjusted by changing the physical and chemical composition of one or more layers in the semiconductor structure 20. The semiconductor structure 20 includes a first semiconductor layer 21, an active layer 22, and a second semiconductor layer 23. The material of the semiconductor structure 20 includes a III-V semiconductor material, such as Al x In y Ga (1-x-y) N or Al x In y Ga (1-x-y) P, where 0≤x, y≤1; (x+y)≤1. When the material of the semiconductor structure 20 is AlInGaP series material, red light with a wavelength between 610nm and 650nm can be emitted. When the material of the semiconductor structure 20 is InGaN series material, blue light with a wavelength between 400nm and 490nm, or green light with a wavelength between 530nm and 570nm can be emitted. When the material of the semiconductor structure 20 is AlGaN series or AlInGaN series material, ultraviolet light with a wavelength between 250nm and 400nm can be emitted.

[0150] The first semiconductor layer 21 and the second semiconductor layer 23 may be cladding layers or confinement layers, and the two have different conductivity types, electrical properties, polarities, or provide electrons or holes according to the doped elements. For example, the first semiconductor layer 21 is an n-type electrical semiconductor, and the second semiconductor layer 23 is a p-type electrical semiconductor. The active layer 22 is formed between the first semiconductor layer 21 and the second semiconductor layer 23. Electrons and holes recombine in the active layer 22 under a current drive, converting electrical energy into light energy to emit a light. The active layer 22 may be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), or a multi-quantumwell (MQW). The material of the active layer 22 may be a neutral, p-type, or n-type electrical semiconductor. The first semiconductor layer 21, the active layer 22, or the second semiconductor layer 23 may be a single layer or a structure including multiple sublayers.

[0151] In one embodiment of the present invention, the semiconductor structure 20 may further include a buffer layer (not shown) located between the first semiconductor layer 21 and the substrate 10, for releasing the stress generated by the material lattice mismatch between the substrate 10 and the semiconductor structure 20, so as to reduce dislocations and lattice defects, thereby improving the epitaxial quality. The buffer layer may be a single layer or a structure including multiple sublayers. In one embodiment, PVD aluminum nitride (AlN) may be selected as a buffer layer, formed between the semiconductor structure 20 and the substrate 10, to improve the epitaxial quality of the semiconductor structure 20. In one embodiment, the target material for forming PVD aluminum nitride (AlN) is composed of aluminum nitride. In another embodiment, a target material composed of aluminum may be used to reactively form aluminum nitride with an aluminum target material in a nitrogen source environment.

[0152] like Figure 2 and Figure 4 As shown, the semiconductor structure 20 includes a first recessed area E1, a second recessed area E2, and a semiconductor platform M surrounded by the first recessed area E1. In one embodiment, the second semiconductor layer 23, the active layer 22, and a portion of the first semiconductor layer 21 can be removed by etching to form the first recessed area E1 and the second recessed area E2. In other words, the first recessed area E1 and the second recessed area E2 expose the upper surface 21t of the first semiconductor layer 21. In a top view of the light emitting element 1, as shown in FIG. Figure 1 As shown, the first recessed area E1 is located on at least one side of the semiconductor platform M, and the second recessed area E2 is located inside the semiconductor platform M and is surrounded by the semiconductor platform M. Figure 2 In FIG. 1 , the mark “ B1 ” indicates a first boundary B1 between the first recessed region E1 and the semiconductor platform M. Figure 4 In the figure, the mark "B2" indicates the second boundary B2 between the second recessed area E2 and the semiconductor platform M. The upper surface 20t of the semiconductor platform M (the upper surface 23t of the second semiconductor layer 23) may be higher than the upper surface 20b of the first recessed area E1 (the upper surface 21t of the first semiconductor layer 21) and the upper surface 20b' of the second recessed area E2 (the upper surface 21t of the first semiconductor layer 21). In one embodiment, the semiconductor platform M may be narrowed toward its top. Therefore, the side surface of the semiconductor platform M may be a slope S.

[0153] like Figure 2 and Figure 4 As shown, in one embodiment, a portion of the upper surface 20b of the first recessed region E1 may be a first contact first region CT1, and a portion of the upper surface 20b' of the second recessed region E2 may be a first contact second region CT1'. In one embodiment, at least a portion of the upper surface 20t of the semiconductor platform M is defined as a second contact region CT2. The reflective structure 40 includes a plurality of contact structure openings 411 to expose the first contact first region CT1 and the first contact second region CT1', and a plurality of reflective structure openings 400 are located on the second contact region CT2 and expose the contact electrode 30. In one embodiment, a first total area A1 of the plurality of first contact second regions CT1' and a second total area A2 of the plurality of first contact first regions CT1 have a ratio (A1 / A2) between 1 and 2 to improve the current distribution of the light emitting element 1. If the ratio (A1 / A2) is less than 1, the brightness of the light emitting element 1 will decrease; if the ratio (A1 / A2) is greater than 2, the voltage (Vf) of the light emitting element 1 will increase.

[0154] like Figure 1 As shown, the substrate 10 includes a first side 11, a second side 12, a third side 13 and a fourth side 14, the semiconductor platform M may be spaced apart from the first side 11 to the fourth side 14, and the first recessed area E1 may be distributed between the semiconductor platform M and any side or any multiple sides of the first side 11 to the fourth side 14. For example, the first recessed area E1 may be disposed between the semiconductor platform M and the first side 11 and between the semiconductor platform M and the second side 12, or between the semiconductor platform M and the third side 13 and between the semiconductor platform M and the fourth side 14. The first side 11 and the second side 12 may be opposite to each other, and the third side 13 and the fourth side 14 may be opposite to each other. In one embodiment, a plurality of second recessed areas E2 having a strip-shaped, rectangular, circular or elliptical shape and spaced apart from each other may be arranged inside the semiconductor platform M.

[0155] like Figure 2As shown, the contact electrode 30 includes an upper surface 30t, and can be directly disposed on the second semiconductor layer 23. The area where the contact electrode 30 contacts the second semiconductor layer 23 constitutes a second contact area CT2, and is electrically connected to the second semiconductor layer 23. The contact electrode 30 is used to disperse the current injected from the outside and then inject it into the second semiconductor layer 23 through the upper surface 20t of the semiconductor platform M (the upper surface 23t of the second semiconductor layer 23).

[0156] like Figure 1 and Figure 3 As shown, in a top view of the light emitting element 1, the reflective structure opening 400 includes a circle, a semicircle, an ellipse, a triangle, a rectangle, a polygon, an arc or a ring. In one embodiment, the reflective structure 40 includes a plurality of reflective structure openings 400 disposed on the semiconductor platform M. The plurality of reflective structure openings 400 may be arranged on the semiconductor platform M in a hexagonal closest packed lattice pattern, but is not limited thereto. In another embodiment, the plurality of reflective structure openings 400 may be arranged in various patterns. For example, a rectangular lattice pattern. As Figure 2 and Figure 4 As shown, the reflective structure 40 is located above the contact electrode 30 and covers the inclined surface S of the semiconductor platform M, and covers a portion of the first semiconductor layer 21 and a portion of the second semiconductor layer 23. For example, the reflective structure 40 may cover a portion of the upper surface 21t of the first semiconductor layer 21 and a portion of the upper surface 23t of the second semiconductor layer 23.

[0157] Fig. 7A It is a side view of a reflective structure opening 400 disclosed in one embodiment of the present invention. Figure 7B yes Fig. 7A A partial enlarged view of the region B indicated by the dotted line. In one embodiment, the reflective structure 40 includes an insulating reflector 41 and an insulating layer 42 between the contact electrode 30 and the insulating reflector 41. The reflective structure opening 400 includes a first reflective structure opening 410 and a second reflective structure opening 420.

[0158] Depend on Fig. 7A From the side view of the reflective structure 40, the reflective structure 40 includes a plurality of side surfaces at the reflective structure opening 400 to define the outline of the reflective structure opening 400. In other words, the reflective structure opening 400 includes a first side surface S1, a second side surface S2, and a third side surface S3, wherein the first reflective structure opening 410 is defined by the first side surface S1 and the second side surface S2, and the second reflective structure opening 420 is defined by the third side surface S3.

[0159] In order to increase the effective reflection area of ​​the insulating reflector 41 and allow the metal reflective layer 52 to be uniformly coated on the first side surface S1 and the second side surface S2 of the reflective structure opening 400, in one embodiment, the first reflective structure opening 410 includes a first opening width W1 that is greater than a second opening width W2 included in the second reflective structure opening 420. In a side view of the light-emitting element 1, the first opening width W1 is between 9 microns and 15 microns, and the second opening width W2 is between 3 microns and 9 microns. In a side view of the light-emitting element 1, the first side surface S1 includes a first acute angle θ1, and the second side surface S2 includes a second acute angle θ2, and the first acute angle θ1 is smaller than the second acute angle θ2. In one embodiment, the first acute angle θ1 is between 5 degrees and 35 degrees or between 10 degrees and 30 degrees. In one embodiment, the second acute angle θ2 is between 40 degrees and 70 degrees or between 30 degrees and 60 degrees. The third side surface S3 is connected to the contact electrode 30 and includes a third acute angle θ3 between 10 degrees and 30 degrees.

[0160] In the side view of the light-emitting element 1, a first side surface S1 of the reflective structure opening 400 is projected onto a first portion P1 of the upper surface 30t of the contact electrode 30 and includes a first length L1, a second side surface S2 of the reflective structure opening 400 is projected onto a second portion P2 of the upper surface 30t of the contact electrode 30 and includes a second length L2, and the first length L1 is smaller than the second length L2.

[0161] In one embodiment, the first length L1 and the second length L2 satisfy the relationship Under a fixed opening width of the reflective structure opening 400, the longer the first length L1 is, the smaller the effective reflective area of ​​the reflective structure 40 will be, which indirectly reduces the light extraction efficiency of the area adjacent to the reflective structure opening 400. In this embodiment, by adjusting the relationship between the first length L1 and the second length L2, cracks in the metal reflective layer 52 coated on the first side surface S1 and the second side surface S2 are avoided, thereby improving the reliability of the light emitting element 1.

[0162] In one embodiment, a total length Lt of the first length L1 and the second length L2 is between 0.5 μm and 2.5 μm. The longer the total length Lt, the smaller the effective reflection area of ​​the reflective structure 40 , which indirectly reduces the light extraction efficiency of the area adjacent to the reflective structure opening 400 .

[0163] In the side view of the light emitting element 1 , the first side surface S1 of the reflective structure opening 400 includes a first height H1 , the second side surface S2 of the reflective structure opening 400 includes a second height H2 , and the first height H1 is smaller than the second height H2 .

[0164] In one embodiment, the first height H1 and the second height H2 satisfy the relationship

[0165] In a top view of the light emitting element 1, the insulating layer 42 includes an insulating layer upper surface 42s surrounding the second reflective structure opening 420, and the first reflective structure opening 410 and the second reflective structure opening 420 form a concentric circle pattern. In a side view of the light emitting element 1, the insulating layer upper surface 42s is exposed in the first reflective structure opening 410, and the second side surface S2 of the reflective structure opening 400 is connected to the insulating layer upper surface 42s. The first reflective structure opening 410 further includes a first top 410t and a first bottom 410b, and the first bottom 410b is the insulating layer upper surface 42s of the insulating layer 42. The second reflective structure opening 420 further includes a second top 420t and a second bottom 420b, the second top 420t and the insulating layer upper surface 42s of the insulating layer 42 are located at the same horizontal plane, and the second bottom 420b is the upper surface 30t of the contact electrode 30.

[0166] In another embodiment (not shown), the first reflective structure opening 410 does not have an insulating layer upper surface 42s, that is, the first side surface S1, the second side surface S2 and the third side surface S3 of the reflective structure opening 400 are located on the same inclined surface, arc surface or curved surface, and the third side surface S3 is directly connected to the upper surface 30t of the contact electrode 30.

[0167] In one embodiment, if Figure 7B As shown, the first side surface S1 is composed of a portion of the side surface of the insulating reflector 41, the second side surface S2 is composed of a portion of the side surface of the insulating reflector 41 and a portion of the side surface of the insulating layer 42, and the third side surface S3 is composed of a portion of the side surface of the insulating layer 42. The second side surface S2 includes a plurality of sub-side surfaces Sn having a plurality of slopes, and the plurality of sub-side surfaces Sn have a plurality of slopes. In one embodiment, the plurality of slopes of the plurality of sub-side surfaces Sn are continuously or discontinuously gradient, for example, the plurality of slopes of the plurality of sub-side surfaces Sn gradually increase in a direction from the first top 410t to the first bottom 410b. In one embodiment, the plurality of sub-side surfaces Sn with increasing slopes can form an arc surface. In this embodiment, the second side surface S2 including the plurality of sub-side surfaces Sn is connected to the upper surface 42s of the insulating layer. In another embodiment (not shown), the second side surface S2 including the plurality of sub-side surfaces Sn is connected to the third side surface S3.

[0168] like Fig. 7A and Figure 7BAs shown, the metal reflective layer 52 covers the connection layer 51, fills the first reflective structure opening 410 and the second reflective structure opening 420, and forms an electrical connection with the contact electrode 30 through the connection layer 51. In the side view of the light-emitting element 1, the metal reflective layer 52 includes a first metal portion 521 covering the first side surface S1 and a second metal portion 522 covering the second side surface S2. In one embodiment, the difference between a first thickness T1 included in the first metal portion 521 and a second thickness T2 included in the second metal portion 522 is less than 10% of the first thickness T1 or the second thickness T2. In another embodiment, the second thickness T2 included in the second metal portion 522 is less than 50% of the first thickness T1 included in the first metal portion 521. In another embodiment, the second thickness T2 included in the second metal portion 522 is more than 50% of the first thickness T1 included in the first metal portion 521.

[0169] Figure 8 It is a partial side view of the first reflective structure opening 410 disclosed in another embodiment of the present invention. In this embodiment, the light-emitting element 1 further includes a dielectric layer 43 coated on the first side surface S1 and the second side surface S2 of the reflective structure opening 400 and connected to the upper surface 42s of the insulating layer. The dielectric layer 43 can be formed of a transparent insulating material, and can include at least one of the following materials: SiO2, SiN, TiO2, HfO, Al2O3 and MgF2. In one embodiment, the insulating layer 42 and the dielectric layer 43 can include the same or different materials. For example, when the insulating reflector 41 is formed by a DBR including SiO2 / TiO2 or SiO2 / Nb2O5, the insulating layer 42 and the dielectric layer 43 can include SiO2. As Figure 8 As shown, the portion where the first sub-layers and / or the second sub-layers of the insulating reflector 41 are connected to the dielectric layer 43 comprises a wedge. The wedges included in the first sub-layers and / or the second sub-layers have different slopes, and the slopes included in the wedges gradually increase from the first top 410t to the first bottom 410b, so as to increase the effective reflection area of ​​the insulating reflector 41 and allow the metal reflection layer 52 to evenly cover the first side surface S1 and the second side surface S2 of the reflection structure opening 400.

[0170] like Figure 2 and Figure 4 As shown, the metal reflective layer 52 is filled into the reflective structure opening 400 of the reflective structure 40 through the connecting layer 51, wherein the connecting layer 51 can improve the adhesion between the reflective structure 40 and the metal reflective layer 52. In the side view of the light emitting element 1, in one embodiment, the metal reflective layer 52 can be disposed on the connecting layer 51 and conform to the connecting layer 51. For example, the metal reflective layer 52 and the connecting layer 51 can completely overlap or partially overlap each other.

[0171] In one embodiment, the metal reflective layer 52 includes silver (Ag), chromium (Cr), nickel (Ni), titanium (Ti), aluminum (Al), rhodium (Rh), ruthenium (Ru), or a combination thereof.

[0172] In one embodiment, the light emitting element 1 further includes a barrier layer (not shown) disposed on the metal reflective layer 52. The barrier layer has a multi-layer structure, for example, a multi-layer structure in which Ti and Ni are alternately stacked.

[0173] In one embodiment, the insulating layer 42 of the reflective structure 40 is an insulating film and has a single-layer structure, including an oxide or a nitride, such as at least one oxide or a nitride selected from the group consisting of metals such as silicon (Si), titanium (Ti), zirconium (Zr), niobium (Nb), tantalum (Ta), and aluminum (Al). In another embodiment, the insulating layer 42 may also be a multi-layer structure, such as a multi-layer structure consisting of SiO2 and Al2O3.

[0174] In one embodiment, reference Figure 1 , Figure 2 , Figure 3 and Figure 4 The insulating reflector 41 may be formed of a material having a refractive index lower than that of the second semiconductor layer 23. The material of the insulating reflector 41 includes SiO2, SiN, SiO x N y , TiO2, Si3N4, Al2O3, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO, TaO2, Nb2O5, or MgF2. In one embodiment, the insulating reflector 41 has a multilayer film structure in which insulating sublayers with different refractive indices are alternately stacked, such as a distributed Bragg reflector (DBR). The distributed Bragg reflector (DBR) structure is formed by alternately stacking a plurality of first sublayers with a first refractive index and a plurality of second sublayers with a second refractive index, and the first refractive index is less than the second refractive index. For example, SiO2 / TiO2 or SiO2 / Nb2O5 can be stacked.

[0175] The bottom layer or top layer of the insulating reflector 41 may use at least one oxide or nitride selected from the group consisting of silicon (Si), titanium (Ti), zirconium (Zr), niobium (Nb), tantalum (Ta), and aluminum (Al). In one embodiment, the bottom layer and the top layer of the insulating reflector 41 include a material different from that of the intermediate layer therebetween and / or a thickness different from that of the intermediate layer and / or a formation process different from that of the intermediate layer.

[0176] In one embodiment, the insulating layer 42 may include the same material as the plurality of first sub-layers of the insulating reflector 41. For example, when the insulating reflector 41 is formed of a DBR including SiO2 / TiO2 or SiO2 / Nb2O5, the plurality of first sub-layers and the insulating layer 42 may be formed of SiO2. Although the insulating layer 42 is formed of the same material as at least a portion of the insulating reflector 41, it is not required to have a high film quality such as an insulating film of the DBR, and therefore, the insulating reflector 41 and the insulating layer 42 may be formed by different processes. The interface of the insulating layer 42 relative to the insulating reflector 41 may be distinguished visually (e.g., an SEM photograph or a TEM photograph). In one embodiment, a total thickness of the plurality of first sub-layers of the insulating reflector 41 is less than a total thickness of the insulating layer 42. Figure 8 The illustrated dielectric layer 43 has a thickness greater than that of each of the plurality of first sub-layers to completely cover the side surface of the insulating reflective mirror 41 .

[0177] Figure 3 yes Figure 1 A top view of the reflective structure opening 400 and the second recessed area E2 in the area A indicated by dotted lines. Figure 4 It is along Figure 3 Sectional view of the tangent line X-X'.

[0178] like Figure 3 As shown, a plurality of reflective structure openings 400 are arranged in a ring along the second boundary B2 between the second recessed area E2 and the semiconductor platform M. The plurality of reflective structure openings 400 are evenly spaced apart from each other by a first shortest distance D1 so that the current injected into the light emitting element 1 can be evenly distributed. In one embodiment, the first shortest distance D1 may be less than a minimum width W included in the second recessed area E2. In one embodiment, the reflective structure opening 400 and the second boundary B2 are spaced apart by a second shortest distance D2, wherein the first shortest distance D1 may be greater than the second shortest distance D2.

[0179] like Figure 2 and Figure 4As shown, the reflective structure 40 includes a contact structure opening 411 located on the first recessed area E1 and the second recessed area E2. The second insulating layer 60 can expose the sidewall of the contact structure opening 411, so that the second insulating layer first opening 601 includes an opening width 601w that is substantially the same as the width 411w of the contact structure opening 411. In another embodiment, the second insulating layer 60 can cover the sidewall of the contact structure opening 411 (not shown), so that the opening width 601w included in the second insulating layer first opening 601 is smaller than the width 411w of the contact structure opening 411. In another embodiment, a minimum distance Smax between a sidewall 601s of the second insulating layer first opening 601 and the inclined surface S of the semiconductor platform M is greater than 10 microns and less than 30 microns so that the second insulating layer 60 includes a thickness to protect the reflective structure 40. The first extended electrode 71 is connected to the first semiconductor layer 21 exposed in the first recessed area E1 and the second recessed area E2 through the second insulating layer first opening 601.

[0180] like Figure 4 As shown, the connection layer 51 is disposed on the reflective structure 40 and contacts the contact electrode 30 through the reflective structure opening 400. The contact electrode 30 and the connection layer 51 may include the same or different materials, but the connection layer 51 includes a thickness that is less than the thickness included in the contact electrode 30. In one embodiment of the invention, the contact electrode 30 and the connection layer 51 include indium tin oxide (ITO). In one embodiment of the invention, the contact electrode 30 and the connection layer 51 include different materials, for example, the contact electrode 30 includes indium tin oxide (ITO) and the connection layer 51 includes aluminum oxide (Al2O3). In one embodiment, the thickness of the contact electrode 30 is between 100 angstroms and 100 angstroms. The thickness of the connecting layer 51 is between 10 angstroms and 90 angstroms. The contact electrode 30 may include indium tin oxide (ITO), zinc-doped indium tin oxide (ZITO), zinc indium oxide (ZIO), gallium indium oxide (GIO), zinc tin oxide (ZTO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), or magnesium zinc oxide (Zn (1-x) Mg x The connection layer 51 may include titanium oxide (TiO x ), titanium nitride (TiN x ), aluminum oxide (Al2O3), indium tin oxide (ITO), zinc-doped indium tin oxide (ZITO), zinc indium oxide (ZIO), gallium indium oxide (GIO), zinc tin oxide (ZTO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), or magnesium zinc oxide (Zn (1-x) Mg x O, 0≤x≤1).

[0181] like Figure 2 As shown, the second insulating layer 60 continuously covers all exposed surfaces of the metal reflective layer 52 and the connecting layer 51 to protect the metal reflective layer 52, such as the upper surface and the side surface of the metal reflective layer 52 and the connecting layer 51. The metal reflective layer 52 and the connecting layer 51 may be encapsulated between the second insulating layer 60 and the reflective structure 40. By forming the second insulating layer 60, the reflectivity of the metal reflective layer 52 may be prevented from being degraded due to subsequent manufacturing processes, and the migration of metal elements contained in the metal reflective layer 52 may be suppressed. The second insulating layer 60 may be formed of a transparent insulating material, and may include at least one of the following materials: SiO2, SiN, TiO2, HfO, and MgF2.

[0182] The reflective structure 40 , the connection layer 51 and the metal reflective layer 52 may be configured as an omni-directional reflector (ODR). The omni-directional reflector may increase the reflectivity of the light emitted from the active layer 22 , thereby improving the light extraction efficiency of the light emitting element 1 .

[0183] like Figure 2 and Figure 4 As shown, when the second insulating layer 60 is formed of a transparent insulating material, the second insulating layer 60 includes a second insulating layer first opening 601 and a second insulating layer second opening 602. The second insulating layer first opening 601 can be disposed on the first recessed region E1 and the second recessed region E2, and the second insulating layer first opening 601 is disposed corresponding to the contact structure opening 411 of the reflective structure 40 to expose the first semiconductor layer 21 of the first contact first region CT1 and the first contact second region CT1'. And the second insulating layer second opening 602 is located on the metal reflective layer 52 of the second contact region CT2.

[0184] In one embodiment, if Figure 1 As shown, the second opening 602 of the second insulating layer is staggered with the plurality of reflective structure openings 400, that is, the second opening 602 of the second insulating layer does not overlap with the plurality of reflective structure openings 400. In order to maintain the pattern of the plurality of reflective structure openings 400 being arranged at equal intervals, the second opening 602 of the second insulating layer comprises an irregular ring shape, and the plurality of reflective structure openings 400 are surrounded by the ring shape. In another embodiment, as Fig.9A As shown, the second insulating layer second opening 602 comprises a rectangle, and the plurality of reflective structure openings 400 are surrounded by the rectangle, wherein the second insulating layer second opening 602 overlaps with the plurality of reflective structure openings 400. In another embodiment, as Fig. 9B As shown, the second opening 602 of the second insulating layer includes a rectangle, and the plurality of reflective structure openings 400 are located in an area outside the rectangle, wherein the second opening 602 of the second insulating layer does not overlap with the plurality of reflective structure openings 400. In another embodiment, Fig.9A and Fig. 9B The illustrated rectangle may be changed to a circle, a triangle, or a regular or irregular polygon.

[0185] In one embodiment, if Figure 1 As shown, the second opening 602 of the second insulating layer includes a network opening having a closed curve outer contour, and the plurality of reflective structure openings 400 include a first portion 4001 located within the closed curve outer contour and a second portion 4002 located outside the closed curve outer contour, wherein the first portion 4001 and the second portion 4002 are arranged on the semiconductor platform M in a hexagonal grid pattern. In another embodiment, as Fig. 9C As shown, the second opening 602 of the second insulating layer includes a closed curve outer contour, and the plurality of reflective structure openings 400 are located outside the closed curve outer contour and are arranged on the semiconductor platform M in a hexagonal grid pattern.

[0186] like Figure 2 and Figure 4 As shown, the first extension electrode 71 may be disposed on the second insulating layer 60, and extend through the first opening 601 of the second insulating layer to the first semiconductor layer 21 of the first contact first region CT1 and the first contact second region CT1' to contact and be electrically connected to the first semiconductor layer 21. In one embodiment, in order to improve the contact resistance characteristics between the first extension electrode 71 and the first semiconductor layer 21, a conductive contact layer (not shown) may be disposed between the first extension electrode 71 and the first semiconductor layer 21. The conductive contact layer may include indium tin oxide (ITO), zinc-doped indium tin oxide (ZITO), zinc indium oxide (ZIO), gallium indium oxide (GIO), zinc tin oxide (ZTO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), or zinc magnesium oxide (Zn-doped indium tin oxide). (1-x) Mg x In one embodiment, a metal contact layer (not shown) may be disposed on the upper surface 20b of the first recessed region E1 and / or the upper surface 20b' of the second recessed region E2, and a portion of the upper surface of the metal contact layer may be the first contact first region CT1 and / or the first contact second region CT1'.

[0187] The second extension electrode 72 may be disposed on the second insulating layer 60 , and extend through the second opening 602 of the second insulating layer to contact the metal reflective layer 52 , thereby being electrically connected to the second semiconductor layer 23 .

[0188] The first extension electrode 71 and the second extension electrode 72 may be disposed on the second insulating layer 60, formed of the same material, and spaced apart from each other. For example, the first extension electrode 71 and the second extension electrode 72 may be formed of a material including at least one of aluminum (Al), gold (Au), tungsten (W), platinum (Pt), iridium (Ir), silver (Ag), copper (Cu), nickel (Ni), titanium (Ti), chromium (Cr), and alloys thereof.

[0189] like Figure 2 As shown, the protective layer 80 includes a first protective layer opening 801 located on the first extension electrode 71 and a second protective layer opening 802 located on the second extension electrode 72. The first protective layer opening 801 can expose the third contact region CT3 of the first extension electrode 71, and the second protective layer opening 802 can expose the fourth contact region CT4 of the second extension electrode 72.

[0190] The first electrode pad 91 may be disposed on the third contact region CT3 through the first opening 801 of the protective layer, and the second electrode pad 92 may be disposed on the fourth contact region CT4 through the second opening 802 of the protective layer. A first solder pad (not shown) may be disposed on the first electrode pad 91, and a second solder pad (not shown) may be disposed on the second electrode pad 92. The first solder pad and the second solder pad may be formed of a conductive material (e.g., Sn or AuSn). Figure 1 As shown, in a top view, the first electrode pad 91 may be adjacent to the first side 11 , and the second electrode pad 92 may be adjacent to the second side 12 .

[0191] The first extension electrode 71, the second extension electrode 72, the first electrode pad 91, and the second electrode pad 92 include metal materials, such as chromium (Cr), titanium (Ti), tungsten (W), gold (Au), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), silver (Ag), etc. or alloys thereof. The first extension electrode 71, the second extension electrode 72, the first electrode pad 91, and the second electrode pad 92 may be composed of a single layer or a plurality of layers. For example, the first extension electrode 71, the second extension electrode 72, the first electrode pad 91, or the second electrode pad 92 may include a Ti / Au layer, a Ti / Pt / Au layer, a Cr / Au layer, a Cr / Pt / Au layer, a Ni / Au layer, a Ni / Pt / Au layer, a Cr / Al / Cr / Ni / Au layer, or an Ag / NiTi / TiW / Pt layer. The first electrode pad 91 and the second electrode pad 92 may serve as a current path for an external power source to supply power to the first semiconductor layer 21 and the second semiconductor layer 23. The first extension electrode 71 , the second extension electrode 72 , the first electrode pad 91 , and the second electrode pad 92 each have a thickness ranging from 0.5 micrometers to 5 micrometers.

[0192] The insulating layer 42, the second insulating layer 60 and the protective layer 80 are disposed on the semiconductor structure 20, and are used as a protective film of the light-emitting element 1 and an antistatic interlayer insulating film. In one embodiment, as an insulating film, the insulating layer 42, the second insulating layer 60 and the protective layer 80 can be a single-layer structure, including metal oxides or metal nitrides, for example, at least one oxide or nitride selected from the group consisting of silicon (Si), titanium (Ti), zirconium (Zr), niobium (Nb), tantalum (Ta), and aluminum (Al) can be preferably used. In one embodiment, the insulating layer 42, the second insulating layer 60 and the protective layer 80 include two or more materials with different refractive indices alternately stacked to form a distributed Bragg reflector (DBR) structure, which selectively reflects light of a specific wavelength. For example, a high reflectivity reflective structure can be formed by stacking two or three insulating layers of SiO2, TiO2, Nb2O5 or Al2O3. For example, when a distributed Bragg reflector (DBR) structure is formed by stacking sublayers such as SiO2 / TiO2 or SiO2 / Nb2O5, each sublayer of the distributed Bragg reflector structure is designed to have an optical thickness of one quarter of the wavelength of light emitted by the active layer 22 or an integer multiple. The optical thickness of each sublayer of the distributed Bragg reflector structure may have a deviation of ±30% based on one or an integer multiple of λ / 4. Since the change of the optical thickness of each sublayer of the distributed Bragg reflector structure will affect the reflectivity, the physical thickness of each sublayer of the insulating layer 42, the second insulating layer 60 and the protective layer 80 obtained based on the optical thickness of the distributed Bragg reflector structure can be formed by electron beam evaporation (E-beam evaporation) to stably control the thickness of each sublayer of the insulating layer 42, the second insulating layer 60 and the protective layer 80.

[0193] In one embodiment of the invention, when the insulating reflector 41 includes a distributed Bragg reflector structure having stacked SiO2 / TiO2 or SiO2 / Nb2O5, the insulating layer 42 has a thickness greater than a thickness of each sublayer included in the insulating reflector 41. In one embodiment of the invention, the thickness of the insulating layer 42 is between 3000 angstroms and 7000 angstroms.

[0194] Figure 5A to Figure 5D It is a cross-sectional view of a method for manufacturing a reflective structure opening 400 of a light emitting element 1 according to an embodiment of the present invention.

[0195] like Figure 5A As shown, first, a contact electrode 30 that can form an ohmic contact with the second semiconductor layer 23 is formed, an insulating layer 42 is formed on the contact electrode 30, and an insulating reflector 41 is formed on the insulating layer 42. Figure 2 and Figure 4When the insulating reflector 41 is covered on the inclined surface S of the semiconductor platform M, the angle of the end point of the inclined surface S will affect the coating quality of the insulating reflector 41. For example, when the insulating reflector 41 is covered on the semiconductor platform M, a fracture surface (not shown) is easily formed at the junction of the inclined surface S of the semiconductor platform M and the upper surface 21t of the first semiconductor layer 21 or the junction of the inclined surface S of the semiconductor platform M and the upper surface 23t of the second semiconductor layer 23. External moisture is easy to invade the semiconductor structure 20 along the fracture surface and reduce the reliability of the light-emitting element 1. In order to improve the above-mentioned fracture surface problem, in this embodiment, before forming the insulating reflector 41, an insulating layer 42 is first formed. The insulating layer 42 has a denser film quality than the insulating reflector 41, and / or covers a more uniform film thickness. When the insulating reflector 41 is composed of multiple sub-layers, the film thickness of the insulating layer 42 is thicker than the sub-layers of the insulating reflector 41. The insulating layer 42 can be formed by the same or different formation method as the insulating reflector 41. In one embodiment, a chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD) method can be used to form an insulating layer 42 having coating characteristics with better coverage. In one embodiment, the high step coverage characteristics of atomic layer deposition (ALD) can be used to form an insulating reflector 41 or an insulating layer 42 with uniform thickness. When the insulating reflector 41 includes a distributed Bragg reflector (DBR) structure, the thickness of each sublayer of the distributed Bragg reflector (DBR) structure will affect the reflectivity of the insulating reflector 41. In this embodiment, the insulating reflector 41 can be formed by electron beam evaporation (E-beam evaporation) to stably control the thickness of each sublayer of the distributed Bragg reflector (DBR) structure.

[0196] like Figure 5B As shown, a mask layer 900 is formed on the insulating reflective mirror 41 by spin coating, exposure, development and the like.

[0197] like Figure 5CAs shown, the insulating reflector 41 not covered by the mask layer 900 is removed by the first etching, wherein the method of removing the insulating reflector 41 includes dry etching or wet etching. In one embodiment, the mask layer 900 having an opening of a first diameter can be used to perform dry etching of the insulating reflector 41 to form a first side surface S1 and a second side surface S2. The insulating layer 42 can be used as a protective layer or a stop layer for dry etching to prevent the plasma ion source in the dry etching process from damaging the contact electrode 30 and the second semiconductor layer 23 of the light-emitting element 1. In order to prevent the insulating reflector 41 from remaining, the insulating layer 42 can be overetched by 5% to 30% in the first etching to form the first reflective structure opening 410 and expose the upper surface 42s of the insulating layer to ensure that there is no residual insulating reflector 41. In another embodiment, in the process of forming the first reflective structure opening 410, the entire insulating layer 42 can be etched to a depth by the first etching until an upper surface 30t of the contact electrode 30 is exposed, so that a side wall of the second reflective structure opening 420 and a side wall of the first reflective structure opening 410 are located on the same inclined plane.

[0198] like Figure 5D As shown, the insulating layer 42 is removed by the second etching until the contact electrode 30 is exposed. In one embodiment, the insulating layer 42 can be removed by a mask layer (not shown) having an opening of a second diameter to form a second reflective structure opening 420 having a third side surface S3. The method of removing the insulating layer 42 in the second etching can be the same as or different from the method of removing the insulating reflector 41 by the first etching. In this embodiment, the first etching is performed by dry etching, and the second etching is performed by wet etching of a method different from the first etching. In one embodiment, the second diameter of the mask layer during the second etching process can be less than or equal to the first diameter of the mask layer during the first etching process. The mask layer 900 is preferably a material that is easy to remove, such as polyimide or photoresist. When the material of the mask layer 900 is polyimide or photoresist, it can be removed by plasma etching. In one embodiment, under the condition of causing less physical damage, the second etching can be performed by adjusting the etching gas or liquid to reduce the damage to the contact electrode 30 caused by the second etching. In another embodiment, the damage to the contact electrode 30 caused by the second etching can be reduced by reducing the etching time.

[0199] Figure 6A to Figure 6B The manufacturing method disclosed in one embodiment of the present invention is Figure 5A In the first etching process of forming the first reflective structure opening 410, the lateral etching rate can be adjusted in multiple etching stages (in parallel to Figure 1 The vertical etching rate (in the direction perpendicular to the upper surface 10s of the substrate 10) and the vertical etching rate (in the direction perpendicular to the Figure 1The ratio of the first side surface S1 to the second side surface S2 is such that the first side surface S1 and the second side surface S2 have different slopes. Fig. 6A As shown, in the first etching stage of the first etching, the insulating layer 42 is overetched by 5% to 30% to form the second side surface S2 and expose the upper surface 42s of the insulating layer. Figure 6B As shown, after the first etching stage of the first etching, the first side surface S1 is formed in the second etching stage of the first etching.

[0200] In one embodiment, a first portion P1 of the first side surface S1 projected onto the upper surface 30 t of the contact electrode 30 includes a first length L1, a second portion P2 of the second side surface S2 projected onto the upper surface 30 t of the contact electrode 30 includes a second length L2, and the first length L1 is smaller than the second length L2.

[0201] In one embodiment, the first length L1 and the second length L2 satisfy the relationship

[0202] In one embodiment, the first side surface S1 includes a first height H1 , the second side surface S2 includes a second height H2 , and the first height H1 is smaller than the second height H2 .

[0203] In one embodiment, the first height H1 and the second height H2 satisfy the relationship

[0204] Fig.10 Schematic diagram of a light emitting device 2 according to an embodiment of the present invention. The light emitting element 1 in the aforementioned embodiment is mounted on a first gasket 501 and a second gasket 502 of a packaging substrate 50 in the form of a flip chip. The first gasket 501 and the second gasket 502 are electrically insulated by an insulating portion 53 comprising an insulating material. Flip chip mounting is to set the side of the growth substrate opposite to the electrode pad forming surface as the main light extraction surface. For example, the light emitting surface 10t of the substrate 10 of the light emitting element 1 is the main light extraction surface of the light emitting element 1. In order to increase the light extraction efficiency of the light emitting device 2, a reflective structure 54 may be provided around the light emitting element 1.

[0205] Fig.11 6 is a schematic diagram of a light emitting device 3 according to an embodiment of the present invention. The light emitting device 3 is a bulb lamp, including a lampshade 612, a reflector 604, a light emitting module 600, a lamp holder 611, a heat sink 614, a connecting portion 616 and an electrical connecting element 618. The light emitting module 600 includes a carrier 606, and a plurality of light emitting units 608 located on the carrier 606, wherein the plurality of light emitting units 608 may be the light emitting element 1 or the light emitting device 2 in the aforementioned embodiment.

[0206] Fig.12Schematic diagram of a backlight module 4 according to an embodiment of the present invention. The backlight module 4 includes a first frame 201, a liquid crystal display panel 202, a brightness enhancement film 310, an optical module 430, a light emitting module assembly 500, and a second frame 700. The light emitting module assembly 500 includes a plurality of light emitting elements 1 or light emitting devices 2 in the aforementioned embodiments, which are arranged in the light emitting module assembly 500 in an edge type or direct type light emitting manner. In one embodiment, the backlight module 4 further includes a wavelength conversion structure 610, which is disposed on the light emitting module assembly 500.

[0207] Fig.13 2 is a schematic diagram of a display 5 according to an embodiment of the present invention. The display 5 includes an LED light-emitting board 3000 and a current source (not shown). The bracket 2000 is used to support the LED light-emitting board 3000. The LED light-emitting board 3000 includes any one of the light-emitting elements 1 or light-emitting devices 2 in the aforementioned embodiments or a backlight module 4. In one embodiment, the LED light-emitting board 3000 includes a plurality of pixel units. Each pixel unit includes a plurality of light-emitting elements 1 or light-emitting devices 2 in the aforementioned embodiments to emit different colors respectively. For example, each pixel unit includes three light-emitting elements 1 or light-emitting devices 2 that emit red light, green light, and blue light respectively.

[0208] Fig.14 Schematic diagram of a light emitting device 6 according to an embodiment of the present invention. In one embodiment, the light emitting device 6 is an LED bulb for a car, which can be plugged and fixed in a mounting through hole on the rear shell of a car headlight assembly. The light emitting device 6 includes a first LED chip 4100 for low beam light emission or a second LED chip 4200 for high beam light emission, a long columnar lamp post 4300, a driving power supply circuit board 4400, a heat sink fin for heat dissipation (not shown), a fan for heat dissipation (not shown), a fan cover for protecting the fan (not shown), a power cord for electrical connection with a vehicle battery (not shown), and a plug arranged at the end of the power cord (not shown). The first LED chip 4100 or the second LED chip 4200 in the light emitting device 6 may include any one or more of the aforementioned light emitting element 1 or light emitting device 2.

[0209] Fig.15Schematic diagram of a light emitting device 7 according to an embodiment of the present invention. In one embodiment, the light emitting device 7 may be a vehicle lighting lamp 5000, which may be applied to a daytime running light, a headlight, a taillight, or a turn signal light. The main lighting lamp 5100 may be a main light emitting lamp in the vehicle lighting lamp 5000. For example, when the vehicle lighting lamp 5000 is used as a headlight, the main lighting lamp 5100 may have the function of illuminating the headlight in front of the vehicle. The combination lighting lamp 5200 may have at least two functions. For example, when the vehicle lighting lamp is used as a headlight, the combination lighting lamp 5200 may perform the functions of a daytime running light (DRL) and a turn signal light. The main lighting lamp 5100 or the combination lighting lamp 5200 may include any one or more of the aforementioned light emitting elements 1 or light emitting devices 2.

[0210] The components of some of the above-mentioned embodiments are provided so that those of ordinary skill in the technical field to which the present invention belongs can better understand the viewpoints of the embodiments of the present invention. Those of ordinary skill in the technical field to which the present invention belongs should understand that they can design or modify other manufacturing processes and structures based on the embodiments of the present invention to achieve the same purposes and / or advantages as the embodiments introduced herein. Those of ordinary skill in the technical field to which the present invention belongs should also understand that such equivalent structures do not deviate from the spirit and scope of the present invention, and they can make various changes, substitutions and replacements without violating the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be based on the definition of the attached claims. In addition, although the present invention has been disclosed as above with several preferred embodiments, it is not intended to limit the present invention.

[0211] References throughout this specification to features, advantages, or similar language do not imply that all features and advantages that may be realized using the present invention should or may be realized in any single embodiment of the present invention. Conversely, language referring to features and advantages is understood to mean that a particular feature, advantage, or characteristic described in connection with an embodiment is included in at least one embodiment of the present invention. Thus, discussions of features and advantages and similar language throughout this specification may, but do not necessarily, represent the same embodiment.

[0212] Furthermore, the described features, advantages, and characteristics of the present invention may be combined in any suitable manner in one or more embodiments. Based on the description herein, one skilled in the relevant art will appreciate that the present invention may be implemented without one or more of the specific features or advantages of a particular embodiment. In other cases, additional features and advantages may be identified in certain embodiments that may not be present in all embodiments of the present invention.

Claims

1. A light-emitting element, comprising: a first semiconductor layer; A semiconductor platform, comprising an active layer and a second semiconductor layer, and comprising an inclined surface connected to the first semiconductor layer; a contact electrode covering the second semiconductor layer and including an upper surface; A reflective structure, comprising an insulating reflective mirror, and an insulating layer located between the contact electrode and the insulating reflective mirror, wherein the reflective structure comprises a reflective structure opening, and the reflective structure opening comprises a first side surface and a second side surface; a connecting layer, covering the reflective structure and filling the reflective structure opening; as well as A metal reflective layer covers the connection layer and fills the reflective structure opening, wherein in a side view of the light-emitting element, a first portion of the first side surface projected onto the upper surface of the contact electrode includes a first length, a second portion of the second side surface projected onto the upper surface includes a second length, and the first length is smaller than the second length. 2 . The light emitting element as claimed in claim 1 , wherein the reflective structure opening comprises a first reflective structure opening and a second reflective structure opening, and the first reflective structure opening comprises a first opening width greater than or equal to a second opening width comprised by the second reflective structure opening.

3. The light-emitting element as claimed in claim 2, wherein in a top view of the light-emitting element, the first opening width is greater than the second opening width, and the insulating layer includes an upper surface of the insulating layer exposed in the first reflective structure opening and surrounding the second reflective structure opening. The light emitting element as claimed in claim 3 , wherein the second side surface is connected to the upper surface of the insulating layer. 5 . The light emitting element as claimed in claim 2 , wherein in a top view of the light emitting element, the first reflective structure opening and the second reflective structure opening form a concentric circle pattern. 6 . The light emitting device as claimed in claim 1 , wherein the first side surface comprises a first acute angle, the second side surface comprises a second acute angle, and the first acute angle is smaller than the second acute angle.

7. The light emitting device as claimed in claim 1, wherein the first length L1 and the second length L2 satisfy the relationship 8 . The light emitting device as claimed in claim 1 , wherein a total length of the first length L1 and the second length L2 is between 0.5 micrometers and 2.5 micrometers. 9 . The light emitting device as claimed in claim 1 , wherein the first side surface comprises a first height H1 , the second side surface comprises a second height H2 , and the first height H1 is smaller than the second height H2 .

10. The light emitting device as claimed in claim 1, wherein the first height H1 and the second height H2 satisfy the relationship

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