Laser and preparation method thereof, optical module, and electronic device

Abstract

The present invention relates to the technical field of optoelectronic devices, and discloses a laser and a preparation method thereof, an optical module, and an electronic device, comprising: a substrate; an active region and a ridge waveguide stacked on the substrate; a first channel and a second channel located on both sides of the ridge waveguide; a first waveguide structure located on a side of the first channel away from the ridge waveguide; a second waveguide structure located on a side of the second channel away from the ridge waveguide; the first waveguide structure and the second waveguide structure are used to couple a high-order mode to an optical path outside an output port. In this way, the channels and waveguide structures on both sides of the double-channel ridge waveguide can be used to filter the optical mode outside the laser base film, realize high-order mode filtering, increase the loss of high-order mode light energy, prevent the influence of high-order mode light energy on the ridge waveguide, thereby improving the single-mode performance of the laser, increasing the stability of the laser output light, and avoiding the defect that part of the high-order mode cannot be eliminated once the ridge waveguide size deviates from the design value in the preparation process.

Description

Technical Field

[0001] The present invention relates to the technical field of optoelectronic devices, and in particular to a laser and a preparation method thereof, an optical module, and an electronic device. Background Art

[0002] Lasers are the core light sources for applications such as high-speed optical communications, optical computing, and lidar. Lasers can impose lateral and longitudinal constraints on the intracavity light field through waveguide structures to achieve the formation of a single-mode light field.

[0003] The waveguide structure commonly used in existing lasers is the ridge waveguide (RWG) structure. The lateral equivalent refractive index of the ridge waveguide changes very little and it is a weakly guided waveguide. Although the ridge waveguide structure only needs one epitaxy during production and the process is relatively simple, if the ridge waveguide size is not well controlled, it will affect the singleness of the laser output light mode, and some high-order modes cannot be eliminated, which seriously affects the line width and output mode of the laser. Summary of the invention

[0004] In view of this, the purpose of the present invention is to provide a laser and its preparation method, optical module, and electronic device, which can realize high-order mode filtering, increase the loss of high-order mode light energy, thereby improving the single-mode performance of the laser and increasing the stability of the laser output light.

[0005] In order to solve the above technical problems, the present invention provides a laser, comprising:

[0006] substrate;

[0007] An active region and a ridge waveguide are stacked on the substrate;

[0008] a first channel and a second channel located on both sides of the ridge waveguide;

[0009] A first waveguide structure located on a side of the first channel away from the ridge waveguide;

[0010] A second waveguide structure located at a side of the second channel away from the ridge waveguide; the first waveguide structure and the second waveguide structure are used to couple the high-order mode to an optical path outside the output port.

[0011] In a first aspect, in the above-mentioned laser provided by the present invention, the region where the first channel is located includes a first region adjacent to the first waveguide structure and a second region adjacent to the ridge waveguide;

[0012] The area where the second channel is located includes a third area adjacent to the second waveguide structure and a fourth area adjacent to the ridge waveguide;

[0013] The laser also includes:

[0014] A first cladding layer is disposed in the first region; the effective refractive index of the first cladding layer is greater than the effective refractive index of the material in the second region;

[0015] A second cladding layer is provided in the third region; the effective refractive index of the second cladding layer is greater than the effective refractive index of the material in the fourth region.

[0016] On the other hand, in the above-mentioned laser provided by the present invention, the laser further comprises:

[0017] a third cladding layer disposed on the ridge waveguide;

[0018] The effective refractive index of the third cladding layer is the same as the effective refractive index of the material in the second region;

[0019] And / or, the effective refractive index of the third cladding layer is the same as the effective refractive index of the material in the fourth region.

[0020] On the other hand, in the above-mentioned laser provided by the present invention, the laser further comprises:

[0021] a first mode converter located at a side of the first waveguide structure away from the first channel;

[0022] A second mode converter located at a side of the second waveguide structure away from the second channel; the first mode converter and the second mode converter are used to perform periodic mode conversion on the high-order modes introduced into the first waveguide structure and the second waveguide structure.

[0023] On the other hand, in the above-mentioned laser provided by the present invention, the first mode converter comprises a first high-order mode dissipative channel and a first dissipative waveguide arranged alternately;

[0024] The second mode converter includes second high-order mode dissipative channels and second dissipative waveguides that are alternately arranged.

[0025] On the other hand, in the above-mentioned laser provided by the present invention, the first mode converter and the second mode converter both include an inclined surface for changing the propagation direction and mode of light;

[0026] The angle between the contact surface between the first mode converter and the first waveguide structure and the inclined surface of the first mode converter is in the range of 5° to 85°;

[0027] An included angle between a contact surface between the second mode converter and the second waveguide structure and an inclined surface of the second mode converter ranges from 5° to 85°.

[0028] On the other hand, in the above laser provided by the present invention, the first dissipative waveguide and the second dissipative waveguide adopt a surface plasmon structure.

[0029] On the other hand, in the above-mentioned laser provided by the present invention, the laser further comprises:

[0030] A reflection grating is located between the active region and the ridge waveguide; the period of the reflection grating ranges from 80 nanometers to 350 nanometers.

[0031] On the other hand, in the above-mentioned laser provided by the present invention, the laser further comprises:

[0032] An injection electrode disposed on the third coating layer;

[0033] An anti-reflection film is arranged on one side of the light outlet of the active area.

[0034] On the other hand, in the above laser provided by the present invention, the width of the active region ranges from 0.6 microns to 10 microns;

[0035] The ridge waveguide has a width ranging from 0.3 microns to 3 microns;

[0036] The width of the first channel and the second channel are both in the range of 0.2 micrometers to 3.5 micrometers;

[0037] The width of the first waveguide structure and the second waveguide structure are both in the range of 0.1 micrometer to 2 micrometers.

[0038] On the other hand, in the above-mentioned laser provided by the present invention, the thickness range of the ridge waveguide, the first waveguide structure and the second waveguide structure is 0.2 micrometer to 0.5 micrometer; or, the thickness range of the ridge waveguide, the first waveguide structure and the second waveguide structure is 1.5 micrometer to 4 micrometer;

[0039] The thickness of the first cladding layer and the second cladding layer are both in the range of 0.6 micrometer to 5 micrometer.

[0040] On the other hand, in the above laser provided by the present invention, the materials of the ridge waveguide, the first waveguide structure and the second waveguide structure include one or a combination of silicon, silicon nitride, indium gallium arsenic phosphide, and polymer;

[0041] The active layer material of the active region is one of InGaAsP and AlGaAsSb or a combination thereof;

[0042] The material of the first cladding layer and the second cladding layer is one or a combination of silicon dioxide, indium phosphide, aluminum oxide and polymer.

[0043] In order to solve the above technical problems, the present invention also provides a method for preparing a laser, comprising:

[0044] forming an active region on a substrate;

[0045] A ridge waveguide, a first channel, a second channel, a first waveguide structure and a second waveguide structure are formed on the active area; wherein the first channel and the second channel are located on both sides of the ridge waveguide; the first waveguide structure is located on the side of the first channel away from the ridge waveguide; the second waveguide structure is located on the side of the second channel away from the ridge waveguide; the first waveguide structure and the second waveguide structure are used to couple a high-order mode to an optical path outside an output port.

[0046] In order to solve the above technical problems, the present invention further provides an optical module, comprising: a circuit board, and a light emitting component electrically connected to the circuit board; wherein the light emitting component comprises the above laser provided by the present invention.

[0047] In order to solve the above technical problem, the present invention further provides an electronic device, comprising the above optical module provided by the present invention.

[0048] It can be seen from the above technical solution that a laser provided by the present invention comprises: a substrate; an active region and a ridge waveguide stacked on the substrate; a first channel and a second channel located on both sides of the ridge waveguide; a first waveguide structure located on a side of the first channel away from the ridge waveguide; a second waveguide structure located on a side of the second channel away from the ridge waveguide; the first waveguide structure and the second waveguide structure are used to couple high-order modes to an optical path outside the output port.

[0049] The beneficial effect of the present invention is that the above-mentioned laser provided by the present invention is provided with a double-channel ridge waveguide, that is, there are channels on both sides of the ridge waveguide, and waveguide structures for coupling high-order modes to the optical path outside the output port are provided on both sides of the double-channel ridge waveguide. In this way, the channels and waveguide structures on both sides of the double-channel ridge waveguide can be used to filter the light mode outside the laser base film, realize high-order mode filtering, increase the loss of high-order mode light energy, prevent the influence of high-order mode light energy on the ridge waveguide, and then improve the single-mode performance of the laser, increase the stability of the laser output light, and avoid the defect that some high-order modes cannot be eliminated once the ridge waveguide size deviates from the design value in the preparation process. Such a design will not affect the line width and output mode of the laser. The laser of the present invention can be applied to different photonic chips, not only can provide a single-mode stable light source, but also can achieve a reduction in chip area, significantly reduce the chip preparation cost, increase the transmission length, and reduce the bit error rate and data reception difficulty.

[0050] In addition, the present invention also provides a corresponding preparation method and electronic equipment for the laser, which have the same or corresponding technical features as the above-mentioned laser, further making the above-mentioned laser more practical, and the preparation method and electronic equipment have corresponding advantages. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] In order to more clearly illustrate the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0052] Figure 1 One of the cross-sectional schematic diagrams of the laser provided by the embodiment of the present invention;

[0053] Figure 2 A second cross-sectional schematic diagram of a laser provided by an embodiment of the present invention;

[0054] Figure 3 A top view of a laser provided by an embodiment of the present invention;

[0055] Figure 4 A flow chart of a method for preparing a laser provided in an embodiment of the present invention.

[0056] Among them, 1 is the substrate, 2 is the active area, 3 is the ridge waveguide, 4 is the first channel, 5 is the second channel, 6 is the first waveguide structure, 7 is the second waveguide structure, 8 is the first cladding layer, 9 is the second cladding layer, A is the first region, B is the second region, C is the third region, D is the fourth region, 10 is the reflection grating, 11 is the first gap layer, 12 is the second gap layer, 13 is the first mode converter, and 14 is the second mode converter. DETAILED DESCRIPTION

[0057] With the rapid development of the Internet of Things, big data, and cloud computing technologies, the field of artificial intelligence is showing an explosive trend. There is an urgent need for high-computing-power, high-integration, and low-power optical computing chips as physical support. This puts forward higher requirements on the temperature stability of the core light source, high-temperature working characteristics, optical feedback stability, single-mode quality, volume cost, etc., and there is an urgent need to study single-mode, narrow-linewidth lasers.

[0058] A single-mode laser is one that can only excite one basic resonant mode. Its working principle is that it only supports one longitudinal mode in the resonant cavity, and the light beam at the laser output end has only one wavelength. Since there is only one basic mode, single-mode lasers have a narrow spectral bandwidth. Although the output power is generally less than that of multi-mode lasers, it has a higher beam quality, so it is widely used in optical communications, fiber optic gyroscopes, optical measurements and other fields. Single-mode lasers have a small divergence angle and strong beam focusing ability, and are suitable for applications that require high precision, high resolution and long transmission distances, such as fiber optic communications, lidar, laser marking, laser engraving, etc.

[0059] The waveguide structures used in existing lasers mainly include ridge waveguide structures and buried heterostructure (BH) structures. The lateral equivalent refractive index of the ridge waveguide changes very little, and it is a weakly guided waveguide. The advantage of the ridge waveguide structure is that only one epitaxy is required during production, and the process is very simple. Many lasers on the market currently use this structure. In general, the double channels on both sides of the etched ridge waveguide stay above the active area, so this structure cannot effectively limit the lateral diffusion of carriers, thereby affecting the efficiency of the laser. In contrast, the active area of ​​the buried heterogeneous waveguide is surrounded by a low-refractive-index wide-bandgap material, so it can limit both the light field and the carriers. However, buried heterogeneous waveguides require multiple epitaxial growths, which are difficult to produce. Generally, buried heterogeneous waveguides are only used in high-end chips to further improve laser performance.

[0060] Ridge waveguide lasers have achieved high-speed products. Currently, 10G, 25G and higher-speed laser chips usually use ridge waveguide structures. However, the difficulty in developing ridge waveguide laser structures lies in the need to accurately control the structural parameters of the ridge waveguide, which places very strict requirements on the preparation process. Once the structural parameters deviate from the design value, it will affect the singleness of the laser output light mode, reduce the electrical injection efficiency and high-speed performance of the product. The introduction of some high-order modes seriously affects the line width and output mode of the laser, resulting in reduced optical computing performance.

[0061] In order to solve the above technical problems, the present invention provides a laser that can solve the problem that the current laser high-order modes cannot be eliminated, increase the loss of high-order mode light energy, improve the single-mode performance of the laser, and increase the stability of the laser output light.

[0062] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0063] In order to enable those skilled in the art to better understand the solution of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. Figure 1 One of the cross-sectional schematic diagrams of the laser provided by the embodiment of the present invention is as follows Figure 1 As shown, the laser includes:

[0064] Substrate 1;

[0065] An active region 2 and a ridge waveguide 3 are stacked on a substrate 1;

[0066] A first channel 4 and a second channel 5 located on both sides of the ridge waveguide 3;

[0067] A first waveguide structure 6 located at a side of the first channel 4 away from the ridge waveguide 3;

[0068] The second waveguide structure 7 located at the side of the second channel 5 away from the ridge waveguide 3; the first waveguide structure 6 and the second waveguide structure 7 are used to couple the high-order mode to the optical path outside the output port.

[0069] In the above-mentioned laser provided by the embodiment of the present invention, a double-channel ridge waveguide is provided, that is, there are channels on both sides of the ridge waveguide 3, and a waveguide structure for coupling the high-order mode to the optical path outside the output port is provided on both sides of the double-channel ridge waveguide. In this way, the channels and waveguide structures on both sides of the double-channel ridge waveguide can be used to filter the light mode outside the laser base film, realize high-order mode filtering, increase the loss of high-order mode light energy, prevent the influence of high-order mode light energy on the ridge waveguide 3, and then improve the single-mode performance of the laser, increase the stability of the laser output light, and avoid the defect that some high-order modes cannot be eliminated once the size of the ridge waveguide 3 deviates from the design value in the preparation process. Such a design will not affect the line width and output mode of the laser. The laser of the present invention can be applied to different photonic chips, not only can provide a single-mode stable light source, but also can achieve a reduction in chip area, significantly reduce the chip preparation cost, increase the transmission length, and reduce the bit error rate and data reception difficulty.

[0070] It should be noted that the laser provided by the present invention can be a semiconductor laser or a quantum well laser. If the laser is a semiconductor laser, the semiconductor laser can use a distributed feedback (DFB) laser, which has the characteristics of compact structure and dynamic single mode. Distributed feedback lasers are side-emitting lasers. Distributed feedback lasers mainly use semiconductor materials as media, including gallium antimonide (GaSb), gallium arsenide (GaAs), indium phosphide (InP), zinc sulfide (ZnS), etc. Distributed feedback lasers have very good monochromaticity (ie, spectral purity), its line width can generally be within 1MHz, and it has a very high side-mode suppression ratio (Side-Mode Suppression Ratio, SMSR), which can be as high as 40dB to 50dB or more. Independent gratings can be integrated in distributed feedback lasers to achieve a wider wavelength tuning range.

[0071] It is understandable that the propagation mode of light can be divided into fundamental mode and higher-order mode. The higher-order mode is relative to the fundamental mode. The fundamental mode is the simplest and most basic propagation mode of light in the waveguide, while the higher-order mode is a more complex mode. Under electrical injection conditions, the light in the active area usually produces fundamental mode and higher-order mode light waves after passing through the reflection grating. However, in the fields of optical communication and computing, the single-mode characteristics of the light source are very high, and high-order modes are not required. The existence of high-order modes can easily lead to a serious decrease in characteristics such as data transmission distance, bit error rate, and optical calculation accuracy. Taking this into account, the present invention utilizes the channels and waveguide structures on both sides of the double-channel ridge waveguide to filter the light modes other than the fundamental mode of the laser, and uses a waveguide structure to couple the high-order modes to the optical path outside the output port, thereby solving the problem that the high-order modes of current lasers (such as distributed feedback lasers) cannot be eliminated.

[0072] That is, the laser provided by the present invention is different from the ridge waveguide structure of the traditional laser, and not only includes the ridge waveguide output light path, but also includes the etched channels on both sides and the waveguide structure for coupling and transmitting high-order light modes.

[0073] In addition, it should be noted that the first waveguide structure and the second waveguide structure of the present invention can be rectangular structures, elliptical structures, or circular structures. The specific shapes of the first waveguide structure and the second waveguide structure can be determined according to actual conditions and are not limited here.

[0074] Furthermore, in a specific implementation, in the above-mentioned laser provided in the embodiment of the present invention, if Figure 1 As shown, the area where the first channel 4 is located includes a first area A adjacent to the first waveguide structure 6 and a second area B adjacent to the ridge waveguide 3; the area where the second channel 5 is located includes a third area C adjacent to the second waveguide structure 7 and a fourth area D adjacent to the ridge waveguide 3.

[0075] Based on this, the laser can also include: a first cladding layer 8 arranged in the first region A; the effective refractive index of the first cladding layer 8 is greater than the effective refractive index of the material in the second region B; a second cladding layer 9 arranged in the third region C; the effective refractive index of the second cladding layer 9 is greater than the effective refractive index of the material in the fourth region D.

[0076] In implementation, the material in the second region B and the fourth region D can be air or other cladding materials. In order to further increase the loss of high-order light mode energy by the waveguide structures on both sides, the present invention uses two materials with different effective refractive indices in the first channel 4 and the second channel 5. The first region A of the first channel 4 is adjacent to the first waveguide structure 6, and the first cladding layer 8 in the first region A uses a cladding material with a larger effective refractive index, while the second region B is adjacent to the ridge waveguide 3, and the material in the second region B uses a material with a smaller effective refractive index. Similarly, the third region C of the second channel 5 is adjacent to the second waveguide structure 7, and the second cladding layer 9 in the third region C uses a cladding material with a larger effective refractive index, while the fourth region D is adjacent to the ridge waveguide 3, and the material in the fourth region D uses a material with a smaller effective refractive index. In this way, the design of the cladding layer of the waveguide structure on both sides can further increase the loss of the high-order mode. During the transmission process of the high-order modes on both sides, their ability to limit light energy is weakened, and the light energy loss increases, while the fundamental mode energy in the ridge waveguide will not be affected, thereby improving the output characteristics of the laser.

[0077] In practical applications, the first region A and the second region B of the first channel 4 may be equally distributed or unequally distributed, which is not limited here. Similarly, the third region C and the fourth region D of the second channel 5 may be equally distributed or unequally distributed, which is not limited here.

[0078] Furthermore, in a specific implementation, in the above-mentioned laser provided in an embodiment of the present invention, the laser may also include: a third cladding layer arranged on the ridge waveguide 3; the effective refractive index of the third cladding layer is the same as the effective refractive index of the material in the second region B; and / or the effective refractive index of the third cladding layer is the same as the effective refractive index of the material in the fourth region D.

[0079] In implementation, a third cladding layer may be provided above the ridge waveguide 3 of the laser. The third cladding layer may be made of the same material as the material in the second region B and the fourth region D, and may be formed by the same etching process, thereby simplifying the manufacturing process. In addition, the third cladding layer may also be made of a different material from the material in the second region B and the fourth region D, as long as the effective refractive index is similar and smaller than the effective refractive index of the first cladding layer 8, the second cladding layer 9 and the ridge waveguide 3. According to the refractive index of light and the principle of total reflection, this refractive index difference can confine the light field within the ridge waveguide 3, ensuring that the light is transmitted in the path specified by the active region 2 and the ridge waveguide 3, thereby improving the propagation efficiency and directionality of the light.

[0080] Furthermore, in a specific implementation, in the above-mentioned laser provided in the embodiment of the present invention, if Figure 1 As shown, the laser may further include: a reflection grating 10 located between the active region 2 and the ridge waveguide 3; the period of the reflection grating 10 may range from 80 nanometers to 350 nanometers.

[0081] In practice, the laser is provided with a reflection grating 10 between the active region 2 and the ridge waveguide 3. The reflection grating can provide optical feedback. When the light generated by the active region 2 propagates to the reflection grating 10, a portion of the light will be reflected back to the active region 2. This reflected light interacts with the light that continues to be generated in the active region 2, causing the light to continuously reflect back and forth inside the laser, thereby increasing the light gain in the active region 2. In addition, the reflection grating 10 has wavelength selectivity, and it has different light emission rates for different wavelengths, and can select light of a specific wavelength for feedback, so that the laser outputs light of a specific wavelength, thereby ensuring the monochromaticity and stability of the laser output.

[0082] The period of the reflection grating 10 of the present invention can be set to any value between 80 nanometers and 350 nanometers, which is determined by the working wavelength. If the period of the reflection grating 10 exceeds the range of 80 nanometers to 350 nanometers, the laser used is not a communication band (generally 1200nm to 1700nm) laser, but may be a laser for other purposes. The propagation direction of light and the divergence of the light beam can be changed by appropriately setting the period, so that the output laser beam has better directionality and spatial distribution characteristics to meet the requirements of beam shape and directionality in different application scenarios.

[0083] Furthermore, in a specific implementation, in the above laser provided in the embodiment of the present invention, the laser may further include: an injection electrode disposed on the third cladding layer; and an anti-reflection (AR) film disposed on the light outlet side of the active region 2 .

[0084] Figure 2The second cross-sectional schematic diagram of the laser provided in the embodiment of the present invention. Figure 2 and Figure 1 The cross-sectional view is obtained by cutting along different directions. Figure 2 and Figure 1 The cutting directions of the cross-section diagram can be perpendicular to each other. Figure 2 As shown, the injection method of the laser can be electrical injection. The black arrow pointing downward points to the electrical injection end of the injection electrode. The injection electrode is located on the third cladding layer, which can also be understood as being located at the top of the laser; the black arrow pointing to the right points to the side of the light outlet of the active area 2. In order to improve the light energy utilization efficiency of the laser, an anti-reflection film is provided on the side of the light outlet of the active area 2. The anti-reflection film can utilize the interference principle of light to reduce the reflection of the light emitted from the active area at the light outlet, so that more light can be transmitted from the light outlet, thereby improving the output efficiency of the light, and improving the luminous efficiency and output power of the laser. The present invention can realize lasing by electrical injection and output the required single-mode laser on the side coated with the anti-reflection film.

[0085] Furthermore, in a specific implementation, in the above-mentioned laser provided in the embodiment of the present invention, if Figure 1 As shown, the width W1 of the active area 2 can range from 0.6 microns to 10 microns; the width W2 of the ridge waveguide 3 can range from 0.3 microns to 3 microns; the width E1 of the first channel 4 and the second channel 5 can range from 0.2 microns to 3.5 microns; the width E2 of the first waveguide structure 6 and the second waveguide structure 7 can range from 0.1 microns to 2 microns.

[0086] In implementation, the width W1 of the active region 2 can be greater than the width W2 of the ridge waveguide 3, the width W1 of the active region 2 can be set to any value between 0.6 microns and 10 microns, and the width W2 of the ridge waveguide 3 can be set to any value between 0.3 microns and 3 microns. The length range of the laser of the present invention can be set to 30 microns and 300 microns. The width E1 of the first channel 4 and the width E1 of the second channel 5 can be set to be the same, and the width E1 of the first channel 4 and the second channel 5 can be set to any value between 0.2 microns and 3.5 microns. The width E2 of the first waveguide structure 6 and the width E2 of the second waveguide structure 7 can be set to be the same, and the width E2 of the first waveguide structure 6 and the second waveguide structure 7 can be set to any value between 0.1 microns and 2 microns. The above values ​​are obtained based on software simulation and experimental tests. Within these parameter ranges, the light modes that can be transmitted by each waveguide structure are determined, so that the required single mode can be transmitted in the ridge waveguide, while other high-order modes are transmitted in the first waveguide structure 6 and the second waveguide structure 7. If it is not within this range, it means that the light mode that can be transmitted has changed, and the effect of mode selection transmission cannot be achieved.

[0087] Further, in a specific implementation, in the above-mentioned laser provided by the embodiment of the present invention, the thickness range of the ridge waveguide 3, the first waveguide structure 6 and the second waveguide structure 7 can all be 0.2 microns to 0.5 microns; or, the thickness range of the ridge waveguide 3, the first waveguide structure 6 and the second waveguide structure 7 can all be 1.5 microns to 4 microns. The thickness range of the first cladding layer 8 and the second cladding layer 9 can all be 0.6 microns to 5 microns.

[0088] In practical applications, the waveguide has different processes for thickness. When the waveguide thickness is required to be smaller, the thickness of the first waveguide structure 6 and the second waveguide structure 7 can be selected within 0.2 microns to 0.5 microns. When the waveguide thickness is required to be larger, the thickness of the first waveguide structure 6 and the second waveguide structure 7 can be selected within 1.5 microns to 4 microns. The thickness of the first cladding layer 8 and the second cladding layer 9 can be selected within 0.6 microns to 5 microns.

[0089] Further, in the specific implementation, in the above-mentioned laser provided by the embodiment of the present invention, the materials of the ridge waveguide 3, the first waveguide structure 6 and the second waveguide structure 7 may include one or a combination of silicon (Si), silicon nitride (Si3N4), indium gallium arsenic phosphide (InGaAsP), indium aluminum gallium arsenic (InAlGaAs), aluminum gallium arsenic antimony (AlGaAsSb), indium phosphide (InP), germanium (Ge), polymers, or other III-V materials, or erbium-doped materials. The active layer material of the active region 2 may be one or a combination of indium gallium arsenic phosphide (InGaAsP), indium aluminum gallium arsenic (InAlGaAs), aluminum gallium arsenic antimony (AlGaAsSb). The materials of the first cladding layer 8 and the second cladding layer 9 may be one or a combination of silicon dioxide (SiO2), indium phosphide (InP), aluminum oxide (Al2O3) and polymers. Such materials can be easily integrated, have high stability, have high light absorption and emission efficiency, and can efficiently transmit and process optical signals.

[0090] It should be added that the material of the substrate 1 may include one or a combination of indium phosphide (InP), silicon (Si), silicon dioxide (SiO2), lithium niobate (LiNbO3), and germanium (Ge). Due to the high integration of silicon-based optoelectronic technology, the substrate 1 of the present invention can specifically select a silicon substrate. The optimal combination is a waveguide material made of III-V materials and a silicon substrate, which can be made into a silicon-based optoelectronic chip with high integration and low overall chip material cost. Other combinations are also feasible, and there will be some differences in comprehensive performance such as threshold current, wavelength stability, luminous power, temperature stability, cost, and integration.

[0091] The material of the grating structure in the reflection grating 10 may be the material of the first waveguide structure 6 and the second waveguide structure 7 .

[0092] In a specific implementation, the laser may further include: a first gap layer 11 located between the active region 2 and the reflection grating 10 , and a second gap layer 12 located between the reflection grating 10 and the ridge waveguide 3 .

[0093] In practice, due to the optical feedback phenomenon between the active region 2 and the reflective grating 10, the light generated by the active region 2 will be partially reflected back by the reflective grating 10. When the reflected light returns to the active region 2, it may interfere with the normal light-emitting process of the active region 2. For example, in a semiconductor laser, this feedback may cause the laser mode to be unstable, generate noise, and even cause problems such as multi-mode oscillation. The provision of the first gap layer 11 can effectively reduce the feedback interference of the reflected light of the reflective grating 10 on the active region 2, so that the active region 2 can stably generate optical signals. In addition, the reflective grating 10 and the ridge waveguide 3 are different optical structures, which will affect each other during operation. The provision of the second gap layer 12 can isolate the reflective grating 10 and the ridge waveguide 3 to a certain extent, reduce the mechanical stress transfer and heat conduction between them, and by adjusting its thickness and refractive index, the propagation mode of light can be better matched, thereby optimizing the coupling of light between the reflective grating 10 and the ridge waveguide 3.

[0094] In specific implementation, the active area 2 can be set to a quantum dot or quantum well structure. When the active area 2 is a quantum dot structure, the photon energy generated when the electron-hole recombination emits light due to the discrete energy levels is more accurate, thereby achieving a more accurate wavelength emission, and the carriers in the quantum dots are confined in a three-dimensional space, so that their recombination probability is higher, thereby improving the luminous efficiency and reducing energy loss. In addition, the quantum dots have a wide absorption spectrum, and the active area 2 can absorb light with a wider range of wavelengths. When the active area 2 is a quantum well structure, the carriers are strongly restricted in the direction perpendicular to the well plane, which can significantly increase the concentration of carriers in the active area, thereby increasing the recombination probability of electrons and holes, enhancing the gain of the active area, and the luminous wavelength of the active area 2 can be adjusted by changing the width of the well and the composition of the material, which can adapt to different application requirements. In practical applications, the present invention can change the specific structure of the active area 2 to further achieve the improvement of single-mode characteristics.

[0095] Figure 3 FIG. 1 is a top view of a laser provided in an embodiment of the present invention. In a specific implementation, in the above-mentioned laser provided in an embodiment of the present invention, Figure 3As shown, the laser may also include: a first mode converter 13 located on the side of the first waveguide structure 6 away from the first channel 4; a second mode converter 14 located on the side of the second waveguide structure 7 away from the second channel 5; the first mode converter 13 and the second mode converter 14 are used to periodically mode convert the high-order modes introduced into the first waveguide structure 6 and the second waveguide structure 7.

[0096] In implementation, the first mode converter 13 and the second mode converter 14 can further periodically convert the high-order mode introduced into the first waveguide structure 6 and the second waveguide structure 7, thereby increasing the mode loss, so that the energy of the unnecessary optical mode is reduced as much as possible before reaching the output end of the single-mode laser, thereby improving the single-mode characteristics. That is, the high-order mode coupled by the first waveguide structure 6 and the second waveguide structure 7 is gradually dissipated by the first mode converter 13 and the second mode converter 14, further ensuring that the laser achieves the elimination of the high-order mode.

[0097] Furthermore, in a specific implementation, in the above-mentioned laser provided in an embodiment of the present invention, the first mode converter 13 may include alternately arranged first high-order mode dissipative channels and first dissipative waveguides; the second mode converter 14 may include alternately arranged second high-order mode dissipative channels and second dissipative waveguides.

[0098] In practice, in order to reduce the length of the laser, the first mode converter 13 and the second mode converter 14 can be composed of alternating high-order mode dissipative channels and dissipative waveguides. The high-order mode dissipative channels and dissipative waveguides are not continuous structures, but mode conversion structures with a certain period. Figure 3 As shown, the period of the high-order mode dissipative channel and the dissipative waveguide can be T1+T2, where T1 corresponds to the period of the high-order mode dissipative channel and T2 corresponds to the period of the dissipative waveguide. This structure will allow the high-order mode to continuously change its mode during transmission, which can increase the loss of high-order mode light energy and quickly guide the high-order mode light energy to the cladding layer, thereby improving the single-mode performance of the laser, while effectively reducing the length of the laser and further improving the integration capability of the optical chip.

[0099] Furthermore, in a specific implementation, in the above-mentioned laser provided by the embodiment of the present invention, both the first mode converter 13 and the second mode converter 14 may include an inclined surface L1 for changing the propagation direction and mode of light.

[0100] Among them, Figure 3As shown, the angle α between the contact surface L2 of the first mode converter 13 and the first waveguide structure 6 and the inclined surface L1 of the first mode converter 13 can range from 5° to 85°; the angle between the contact surface L2 of the second mode converter 14 and the second waveguide structure 7 and the inclined surface L1 of the second mode converter 14 can range from 5° to 85°. In this way, a high-performance compact single-mode laser can be constructed, which is particularly suitable for application scenarios where integrated light source array chips are required. It can greatly reduce the chip size, improve the integration level, and further ensure the conversion between modes and increase the dissipation of high-order mode energy. If the angle is less than 5°, it cannot increase the energy loss of high-order modes; if the angle exceeds 85°, it may cause the high-order modes to be reflected back to the input end, thereby affecting the light field of the ridge waveguide.

[0101] Furthermore, in a specific implementation, in the above laser provided by the embodiment of the present invention, the first dissipative waveguide and the second dissipative waveguide may adopt a surface plasmon structure.

[0102] In implementation, the first dissipative waveguide and the second dissipative waveguide can be doped with metal to form a surface plasma structure, which can concentrate the light field energy in a very small area, significantly enhance the interaction between light and matter, and flexibly adjust the resonance characteristics of the surface plasma to meet the requirements of light field frequency and wavelength in different application scenarios, and realize efficient coupling and transmission of the light field, increase the dissipation degree of high-order modes, and further reduce the length of the DFB laser, which is conducive to the miniaturization and integration of the laser.

[0103] It should be added that the laser provided by the present invention avoids the influence of high-order mode light energy on the ridge waveguide by introducing a double-channel dissipative structure, thereby increasing the stability of the laser, and can be applied to optical communication transceiver chips, optical I / O chips, optoelectronic computing neural network chips and other scenarios, and can also be applied to other band optical networks. All preparation processes of the present invention are compatible with complementary metal oxide semiconductor (CMOS) processes and do not require additional energy.

[0104] In the above embodiments, the laser is described in detail. Based on the same inventive concept, the embodiments of the present invention also provide corresponding embodiments of the laser manufacturing method, optical module, and electronic device.

[0105] Figure 4 Flow chart of the method for preparing a laser provided in an embodiment of the present invention. The method for preparing a laser provided in this embodiment, such as Figure 4 As shown, the specific steps include:

[0106] S401 , forming an active region on a substrate.

[0107] In a possible implementation, an active region is fabricated on a substrate, the substrate may be made of materials such as indium phosphide (InP) and silicon (Si), and the active region may be made of one or a combination of indium gallium arsenic phosphide (InGaAsP) and aluminum gallium arsenic antimony (AlGaAsSb).

[0108] S402. Form a ridge waveguide, a first channel, a second channel, a first waveguide structure and a second waveguide structure on the active area; wherein the first channel and the second channel are located on both sides of the ridge waveguide; the first waveguide structure is located on the side of the first channel away from the ridge waveguide; the second waveguide structure is located on the side of the second channel away from the ridge waveguide; the first waveguide structure and the second waveguide structure are used to couple the high-order mode to the optical path outside the output port.

[0109] In a possible implementation, a ridge waveguide, a first channel, a second channel, a first waveguide structure, and a second waveguide structure may be formed simultaneously on the active region. Specifically, a layer of waveguide material may be formed first, such as one or a combination of silicon (Si), silicon nitride (Si3N4), indium gallium arsenic phosphide (InGaAsP), and a polymer, and then an etching process may be performed in the region where the first channel and the second channel are to be formed to form the first channel and the second channel. After etching, a ridge waveguide, a first waveguide structure, and a second waveguide structure are finally formed. The width of the ridge waveguide may be smaller than the width of the above-mentioned active region.

[0110] In the method for preparing the above-mentioned laser provided by the embodiment of the present invention, the active region and the ridge waveguide can be sequentially formed on the substrate by executing the above-mentioned steps S401 and S402. In the process of forming the ridge waveguide, the first channel, the second channel, the first waveguide structure and the second waveguide structure can be simultaneously formed. Specifically, channels are formed on both sides of the ridge waveguide, and waveguide structures for coupling the high-order mode to the optical path outside the output port are formed on both sides of the double-channel ridge waveguide. In this way, the channels and waveguide structures on both sides of the double-channel ridge waveguide can be used to filter the optical mode outside the laser base film, realize high-order mode filtering, increase the loss of high-order mode light energy, and prevent the influence of high-order mode light energy on the ridge waveguide, thereby improving the single-mode performance of the laser, increasing the stability of the laser output light, and avoiding the defect that some high-order modes cannot be eliminated once the ridge waveguide size deviates from the design value in the preparation process, and will not affect the line width and output mode of the laser. The laser prepared by the above preparation method of the present invention can be applied to different photonic chips, which can not only provide a single-mode stable light source, but also achieve chip area reduction, significantly reduce chip preparation costs, increase transmission length, and reduce bit error rate and data reception difficulty.

[0111] Since the embodiments of the preparation method part correspond to the embodiments of the laser part, the embodiments of the preparation method part refer to the description of the embodiments of the laser part, which will not be described here. And it has the same beneficial effects as the laser mentioned above.

[0112] Furthermore, in a specific implementation, in the method for preparing the above-mentioned laser provided in an embodiment of the present invention, after forming the first channel and the second channel, it may also include: forming a first cladding layer in the first region in the first channel, and forming a second cladding layer in the third region in the second channel.

[0113] The first region in the first channel is adjacent to the first waveguide structure, and the second region in the first channel is adjacent to the ridge waveguide. The third region in the second channel is adjacent to the second waveguide structure, and the fourth region is adjacent to the ridge waveguide. The effective refractive index of the first cladding layer is greater than the effective refractive index of the material in the second region; the effective refractive index of the second cladding layer is greater than the effective refractive index of the material in the fourth region.

[0114] Furthermore, in a specific implementation, the method for preparing the laser provided in the embodiment of the present invention may further include: forming a third cladding layer on the ridge waveguide.

[0115] The effective refractive index of the third cladding layer is the same as the effective refractive index of the material in the second region; and / or the effective refractive index of the third cladding layer is the same as the effective refractive index of the material in the fourth region. That is, the third cladding layer can cover the second region and / or the fourth region to make the material uniform.

[0116] Furthermore, in a specific implementation, in the method for preparing the laser provided in the embodiment of the present invention, after performing step S401 to form an active region on a substrate, before performing step S402 to form a ridge waveguide, a first channel, a second channel, a first waveguide structure, and a second waveguide structure on the active region, the method may further include: forming a reflection grating on the active region. The period of the reflection grating may range from 80 nanometers to 350 nanometers.

[0117] Furthermore, in a specific implementation, the method for preparing the laser provided in the embodiment of the present invention may further include: forming an injection electrode on the third cladding layer; and forming an anti-reflection film on the light outlet side of the active region 2 .

[0118] In practice, the order of the manufacturing process of the injection electrode and the anti-reflection film is not limited. The present invention can realize lasing through electrical injection and output the required single-mode laser on the side coated with the anti-reflection film.

[0119] Furthermore, in a specific implementation, in the method for preparing the laser provided in the embodiment of the present invention, after performing step S401 to form an active region on the substrate and before forming a reflective grating on the active region, the method may further include: forming a first gap layer on the active region. After forming the reflective grating on the active region and before performing step S402 to form a ridge waveguide, a first channel, a second channel, a first waveguide structure, and a second waveguide structure on the active region, the method may further include: forming a second gap layer on the reflective grating.

[0120] Furthermore, in a specific implementation, the method for preparing the above-mentioned laser provided in an embodiment of the present invention may also include: forming a first mode converter on a side of the first waveguide structure away from the first channel; forming a second mode converter on a side of the second waveguide structure away from the second channel; the first mode converter and the second mode converter are used to periodically mode-convert high-order modes introduced into the first waveguide structure and the second waveguide structure.

[0121] Wherein, the first mode converter may include a first high-order mode dissipative channel and a first dissipative waveguide arranged alternately; the second mode converter may include a second high-order mode dissipative channel and a second dissipative waveguide arranged alternately. The first mode converter and the second mode converter may both include an inclined surface for changing the propagation direction and mode of light. The angle between the contact surface of the first mode converter and the first waveguide structure and the inclined surface of the first mode converter may range from 5° to 85°; the angle between the contact surface of the second mode converter and the second waveguide structure and the inclined surface of the second mode converter may range from 5° to 85°.

[0122] For more specific working processes of the above steps, please refer to the corresponding contents disclosed in the above embodiments, which will not be repeated here.

[0123] Based on the same inventive concept, an embodiment of the present invention further provides an optical module, including a circuit board and an optical emitting component electrically connected to the circuit board; wherein the optical emitting component includes the above-mentioned laser. Since the principle of solving the problem by the optical module is similar to that of the above-mentioned laser, the implementation of the optical module can refer to the implementation of the laser, and the repeated parts will not be repeated.

[0124] Based on the same inventive concept, an embodiment of the present invention further provides an electronic device including the above optical module. Since the principle of solving the problem by the electronic device is similar to that of the above optical module, the implementation of the electronic device can refer to the implementation of the optical module, and the repeated parts will not be repeated.

[0125] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0126] Finally, it should be noted that, unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by technicians in the technical field of the present application; the terms used in the specification of the application herein are only for the purpose of describing specific embodiments and are not intended to limit the present application; the terms "include", "comprise" and "have" and any other variations thereof in the present application are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise one..." do not exclude the presence of other identical elements in the process, method, article or device including the elements. In the present application, relational terms such as first and second, etc. are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations.

[0127] For the above-mentioned embodiments, for the sake of simplicity, they are all described as a series of action combinations, but those skilled in the art should know that the present invention is not limited by the order of the actions described, because according to the present invention, some steps may be performed in other orders or simultaneously. Secondly, those skilled in the art should also know that the embodiments described in the specification are all preferred embodiments, and the actions and modules involved are not necessarily required by the present invention.

[0128] Obviously, the described embodiments are only some embodiments of the present invention, rather than all embodiments. Based on these embodiments, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. Although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in this field can still combine, add, delete or make other adjustments to the features in the embodiments of the present invention according to the circumstances without conflict and without making creative work, so as to obtain different other technical solutions that do not deviate from the concept of the present invention in essence, and these technical solutions also belong to the scope of protection of the present invention.

[0129] The laser and its preparation method, optical module, and electronic device provided by the present invention are introduced in detail above. Specific examples are used in this article to illustrate the principle and implementation of the present invention. The description of the above embodiments is only used to help understand the method and core idea of ​​the present invention, rather than to limit the scope of protection of the invention; at the same time, for those of ordinary skill in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A laser, characterized in that: The laser comprises: substrate; An active region and a ridge waveguide are stacked on the substrate; A first channel and a second channel are located on both sides of the ridge waveguide; the area where the first channel is located includes a first area adjacent to the first waveguide structure and a second area adjacent to the ridge waveguide; the area where the second channel is located includes a third area adjacent to the second waveguide structure and a fourth area adjacent to the ridge waveguide; the substances in the second area and the fourth area are air or cladding material; A first waveguide structure located on a side of the first channel away from the ridge waveguide; a second waveguide structure located at a side of the second channel away from the ridge waveguide; the first waveguide structure and the second waveguide structure are used to couple the high-order mode to an optical path outside the output port; A first cladding layer is disposed in the first region; the effective refractive index of the first cladding layer is greater than the effective refractive index of the material in the second region; A second cladding layer disposed in the third region; the effective refractive index of the second cladding layer is greater than the effective refractive index of the material in the fourth region; a first mode converter located at a side of the first waveguide structure away from the first channel; a second mode converter located at a side of the second waveguide structure away from the second channel; the first mode converter and the second mode converter are used to periodically mode-convert high-order modes introduced into the first waveguide structure and the second waveguide structure; and the high-order modes coupled between the first waveguide structure and the second waveguide structure are gradually dissipated by the first mode converter and the second mode converter.

2. The laser according to claim 1, characterized in that The laser also includes: a third cladding layer disposed on the ridge waveguide; The effective refractive index of the third cladding layer is the same as the effective refractive index of the material in the second region; And / or, the effective refractive index of the third cladding layer is the same as the effective refractive index of the material in the fourth region.

3. The laser according to claim 2, characterized in that The first mode converter includes first high-order mode dissipative channels and first dissipative waveguides arranged alternately; The second mode converter includes second high-order mode dissipative channels and second dissipative waveguides that are alternately arranged.

4. The laser according to claim 3, characterized in that The first mode converter and the second mode converter each include an inclined surface for changing a propagation direction and a mode of light; The angle between the contact surface between the first mode converter and the first waveguide structure and the inclined surface of the first mode converter is in the range of 5° to 85°; An included angle between a contact surface between the second mode converter and the second waveguide structure and an inclined surface of the second mode converter ranges from 5° to 85°.

5. The laser according to claim 3, characterized in that The first dissipative waveguide and the second dissipative waveguide adopt a surface plasmon structure.

6. The laser according to claim 1, characterized in that The laser also includes: A reflection grating is located between the active region and the ridge waveguide; the period of the reflection grating ranges from 80 nanometers to 350 nanometers.

7. The laser according to claim 2, characterized in that The laser also includes: An injection electrode disposed on the third coating layer; An anti-reflection film is arranged on one side of the light outlet of the active area.

8. The laser according to claim 1, characterized in that The width of the active region ranges from 0.6 microns to 10 microns; The ridge waveguide has a width ranging from 0.3 microns to 3 microns; The width of the first channel and the second channel are both in the range of 0.2 micrometers to 3.5 micrometers; The width of the first waveguide structure and the second waveguide structure are both in the range of 0.1 micrometer to 2 micrometers.

9. The laser according to claim 1, characterized in that For the ridge waveguide, the thickness of the first waveguide structure and the second waveguide structure are both in the range of 0.2 micrometers to 0.5 micrometers; or, for the ridge waveguide, the thickness of the first waveguide structure and the second waveguide structure are both in the range of 1.5 micrometers to 4 micrometers; The thickness of the first cladding layer and the second cladding layer are both in the range of 0.6 micrometer to 5 micrometer.

10. The laser according to claim 1, characterized in that The ridge waveguide, the first waveguide structure and the second waveguide structure include one or a combination of silicon, silicon nitride, indium gallium arsenic phosphide, and polymer; The active layer material of the active region is one of InGaAsP and AlGaAsSb or a combination thereof; The material of the first cladding layer and the second cladding layer is one or a combination of silicon dioxide, indium phosphide, aluminum oxide and polymer.

11. A method for preparing a laser according to any one of claims 1 to 10, characterized in that: include: forming an active region on a substrate; A ridge waveguide, a first channel, a second channel, a first waveguide structure and a second waveguide structure are formed on the active area; wherein the first channel and the second channel are located on both sides of the ridge waveguide; the area where the first channel is located includes a first area adjacent to the first waveguide structure and a second area adjacent to the ridge waveguide; the area where the second channel is located includes a third area adjacent to the second waveguide structure and a fourth area adjacent to the ridge waveguide; the material in the second area and the fourth area is air or a cladding material; the first waveguide structure is located on the side of the first channel away from the ridge waveguide; the second waveguide structure is located on the side of the second channel away from the ridge waveguide; the first waveguide structure and the second waveguide structure are used to couple a high-order mode to an optical path outside the output port; A first cladding layer is formed in the first region, and a second cladding layer is formed in the third region; wherein the effective refractive index of the first cladding layer is greater than the effective refractive index of the material in the second region; and the effective refractive index of the second cladding layer is greater than the effective refractive index of the material in the fourth region; A first mode converter is formed on a side of the first waveguide structure away from the first channel; a second mode converter is formed on a side of the second waveguide structure away from the second channel; the first mode converter and the second mode converter are used to perform periodic mode conversion on high-order modes introduced into the first waveguide structure and the second waveguide structure; and the high-order modes coupled between the first waveguide structure and the second waveguide structure are gradually dissipated through the first mode converter and the second mode converter.

12. An optical module, characterized in that: include: A circuit board, and a light emitting component electrically connected to the circuit board; wherein the light emitting component comprises a laser as claimed in any one of claims 1 to 10.

13. An electronic device, characterized in that: Comprising the optical module as claimed in claim 12.

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