A method for preparing a heterojunction diode light emitting rod driven by a button cell
Flexible light-emitting diodes are prepared by using inorganic/organic heterojunction structures and inexpensive processes, which solves the problems of P-type doping of inorganic semiconductors and N-type doping of organic semiconductors, and realizes low-cost preparation of light-emitting diodes with flexibility and portability.
Patent Information
- Application Number
- CN202411486772.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-23
- Publication Date
- 2025-10-21
- Estimated Expiration
- 2044-10-23
AI Technical Summary
Inorganic semiconductor materials lack P-type doping and organic semiconductor materials lack N-type doping, which leads to high preparation costs of light-emitting diodes and limited material resources.
Flexible light-emitting diodes are prepared by using transfer imprinting and coating processes combined with inorganic/organic heterojunction structures, using cheap materials such as zinc oxide and lead halide perovskite quantum dots to replace expensive epitaxial and evaporation processes.
A flexible, bendable, and portable light-emitting device is realized, which reduces the preparation cost and overcomes the limitation of material resources.
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Figure CN119156038B_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the field of optoelectronics and lighting devices, and in particular relates to a method for preparing a heterojunction diode light-emitting rod driven by a button battery. Technical Background
[0002] The advent of light-emitting diodes (LEDs) has ushered in the fourth generation of lighting. The emergence of gallium nitride (GaN) has enabled the realization of the three primary colors of red, green, and blue through LEDs. However, the current challenge is that gallium is naturally present in limited quantities and difficult to extract. It is often extracted as a byproduct of the aluminum electrolysis industry as a companion mineral. Furthermore, p-type doping of GaN has long been a challenge in the industry. To address the gallium resource issue, zinc oxide (ZnO) has long been a highly sought-after alternative material, offering potential to replace GaN in many aspects, such as its abundance and physical and chemical properties, which closely resemble those of GaN. However, ZnO also presents significant challenges: the difficulty of obtaining p-type doping. In addition to LEDs made from inorganic semiconductors, organic LEDs have also made significant progress in recent decades in the lighting and display fields. However, compared to the difficulties encountered with inorganic materials, obtaining n-type organic / polymer LEDs is more challenging. The present invention aims to overcome the difficulties of both p-type doping of inorganic semiconductors and n-type doping of organic semiconductors by utilizing an inorganic / organic heterojunction, enabling the fabrication of active light-emitting diodes on flexible substrates. Summary of the Invention
[0003] Purpose of the invention: To overcome the shortcomings of inorganic semiconductor materials lacking P-type and organic semiconductor materials lacking N-type, and to use the inexpensive process of transfer printing and coating to replace the processes of epitaxy and evaporation that require expensive equipment, to prepare a flexible, bendable, inexpensive, portable lighting device that can be driven by button batteries.
[0004] The present invention adopts the following technical solution: a method for preparing a heterojunction diode light-emitting rod driven by a button battery, comprising the following stages:
[0005] The first stage: coating of the light-emitting layer, divided into five steps:
[0006] (1) Flatten a piece of parylene epoxy resin film, apply conductive silver paste on the surface of the parylene epoxy resin film, wait for the organic components in the conductive silver paste to volatilize and solidify naturally to form a linear silver electrode;
[0007] (2) Imprinting and transferring a two-dimensional hole injection layer on the surface of the solidified linear silver electrode to form contact with the linear silver electrode, leaving the left portion of the linear silver electrode blank;
[0008] (3) Coating a P-type organic material on the surface of the two-dimensional hole injection layer as an organic hole transport layer, leaving the left linear silver electrode blank;
[0009] (4) After the P-type organic thin layer solidifies into a solid state, the lead halide perovskite quantum dots APbX3 are imprinted on its surface, where A represents rubidium Rb, cesium Cs or methylamine CH3NH3 ions, X represents halogen, and Pb represents lead;
[0010] (5) Finally, a nano-electron transport layer is applied to obtain a luminescent film;
[0011] The second stage: Take an aluminum rod and coat its surface with conductive silver paste or lithium fluoride film. After the organic components in the conductive silver paste or lithium fluoride evaporate, place the rod-shaped aluminum electrode coated with the conductive silver paste or lithium fluoride film on the nano-electron transport layer along the length of the light-emitting film. The light-emitting film is rolled into a cylindrical structure along the width direction.
[0012] The third stage: Use a cover plate to seal the end of the cylindrical structure, insert a button battery into the beginning of the cylindrical structure, and then use a second cover plate to seal the beginning of the cylindrical structure. The negative pole of the button battery is connected to the aluminum electrode, and the positive pole of the button battery is connected to the linear silver electrode.
[0013] Furthermore, the material of the two-dimensional hole injection layer imprinted and transported on the surface of the linear silver electrode after solidification is at least one of molybdenum disulfide, graphene, and graphene oxide.
[0014] Furthermore, in the first stage (5), the material of the nano electron transport layer coated last is: oxide, sulfide, selenide or telluride of zinc, titanium, nickel, zirconium, molybdenum, cadmium or tin metal elements.
[0015] Furthermore, the nano electron transport layer is a zinc oxide nanoparticle coating.
[0016] Beneficial effects: The product of the present invention overcomes the shortcomings of inorganic semiconductor materials lacking P-type and organic semiconductor materials lacking N-type. It utilizes transfer printing and coating processes, has low production costs, and is flexible, bendable, and easy to carry. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Figure 1 This is a schematic diagram of the first stage of the preparation process of the light emitting device of the present invention;
[0018] Figure 2 It is a schematic diagram of the second stage of the light emitting device preparation process of the present invention;
[0019] Figure 3 Schematic diagram of the third stage of the light emitting device preparation process of the present invention;
[0020] Figure 4 It is a schematic diagram of the luminous effect of the device of the present invention. Specific implementation plan
[0021] In order to better understand the technical solution of the present invention, the following embodiments will further illustrate the design solution provided by the present invention, but the present invention is not limited to the listed embodiments, and should also include any other known changes within the scope of the claims of the present invention. Example
[0022] like Figure 1 As shown in the figure, a heterojunction diode light-emitting rod driven by a button battery has the following preparation process: the first stage is the coating of the light-emitting layer, which is divided into five steps: (1) flattening a piece of polyparaxylene epoxy resin film 1, the width of which is slightly longer than the circumference of a button battery, and the length of which can be adjusted according to actual needs, and forming a light-emitting layer on the surface of the polyparaxylene epoxy resin film according to the following steps: Figure 1 The shape shown is coated with conductive silver paste, and then the organic components in the conductive silver paste are allowed to volatilize and solidify naturally to form a linear silver electrode 2; (2) a two-dimensional hole injection layer 3 is imprinted on the surface of the solidified silver electrode. The two-dimensional hole injection layer, such as molybdenum disulfide, graphene or graphene oxide film, is preferably molybdenum disulfide because graphene, as a representative of two-dimensional materials, has no band gap, while molybdenum disulfide does. It forms contact with the silver electrode, leaving the left side of the silver electrode not covered by the two-dimensional hole injection layer; (3) as shown in the figure, a P-type organic layer is coated on the entire two-dimensional hole injection layer area. (4) After the thin layer of P-type organic matter solidifies into a solid state, perovskite quantum dots 5, APbX3 quantum dots, are imprinted and transferred onto its surface, where A represents rubidium Rb, cesium Cs or methylamine CH3NH3 ions, X represents halogen, and Pb is lead; (5) Finally, a nano-electron transport layer 6 is applied, preferably zinc oxide ZnO, because: it is rich in resources and easy to obtain, the preparation methods of zinc oxide nanoparticles, nanorods or nanowires are diverse and simple, and intrinsic zinc oxide is N-type and easy to generate electrons. Others include oxides, sulfides, selenides or tellurides of divalent or tetravalent metal elements such as titanium (No. 22, 4-valent), nickel (No. 28, 2-valent), zirconium (No. 40, 4-valent), molybdenum (No. 42, 4-valent), cadmium (No. 48, 2-valent), and tin (No. 50, 4-valent).
[0023] like Figure 2As shown, an aluminum rod 8 is taken, whose length is equal to the length of the P-type polymer film, and a conductive silver paste or lithium fluoride film 7 is coated on its surface. After the organic components in the conductive silver paste or lithium fluoride are volatilized, the rod-shaped aluminum electrode coated with the conductive silver paste is placed on the zinc oxide nanoparticle coating along the length direction of the light-emitting film, and the light-emitting film is rolled into a barrel shape along the width direction.
[0024] like Figure 3 As shown, a round plastic cover is used to seal the end of the cylindrical structure (on the right), and a button battery (or two or three, the specific number of batteries is determined by the different driving voltages caused by the materials selected for the device) is inserted into the beginning of the barrel structure (on the left), and then a second round plastic cover is used to seal the end of the cylindrical structure.
[0025] like Figure 4 Figure 2 shows the structure and luminescence effect of a coin cell-powered heterojunction light-emitting rod after fabrication. The negative electrode of the coin cell is connected to an aluminum electrode, through which a negative current (electrons) is conducted to the silver electrode and then to the zinc oxide layer. The positive electrode of the coin cell is connected to a linear silver electrode, through which a positive current (holes) is conducted through the silver electrode through the two-dimensional material and then to the organic layer. Holes and electrons recombine at the quantum dot to form photons, which are then emitted.
[0026] The product prepared by the present invention overcomes the shortcomings of inorganic semiconductor materials lacking P-type and organic semiconductor materials lacking N-type. The mature and inexpensive processes of transfer printing and coating replace the processes of epitaxy and evaporation that require expensive equipment, thereby preparing a flexible, bendable, inexpensive, easy-to-carry and button battery-powered lighting device.
Claims
1. A method for preparing a heterojunction diode light-emitting rod driven by a button cell, characterized in that: The following stages are included: The first stage: coating of the light-emitting layer, divided into five steps: (1) Flatten a piece of parylene epoxy resin film, apply conductive silver paste on the surface of the parylene epoxy resin film, wait for the organic components in the conductive silver paste to volatilize and solidify naturally to form a linear silver electrode; (2) Imprinting and transferring a two-dimensional hole injection layer on the surface of the solidified linear silver electrode to form contact with the linear silver electrode, leaving a portion of the linear silver electrode on the left side empty; (3) Coating a P-type organic material on the surface of the two-dimensional hole injection layer as an organic hole transport layer, leaving the left linear silver electrode blank; (4) After the P-type organic thin layer solidifies into a solid state, the lead halide perovskite quantum dots APbX3 are imprinted on its surface, where A represents rubidium Rb, cesium Cs or methylamine CH3NH3 ions, X represents halogen, and Pb represents lead; (5) Finally, a nano-electron transport layer is applied to obtain a luminescent film; The second stage: Take an aluminum rod and coat its surface with conductive silver paste or lithium fluoride film. After the organic components in the conductive silver paste or lithium fluoride evaporate, place the rod-shaped aluminum electrode coated with the conductive silver paste or lithium fluoride film on the nano-electron transport layer along the length of the light-emitting film. The light-emitting film is rolled into a cylindrical structure along the width direction. The third stage: Use a cover plate to seal the end of the cylindrical structure, insert a button battery into the beginning of the cylindrical structure, and then use a second cover plate to seal the beginning of the cylindrical structure. The negative pole of the button battery is connected to the aluminum electrode, and the positive pole of the button battery is connected to the linear silver electrode.
2. The method for preparing a heterojunction diode light-emitting rod driven by a button cell according to claim 1, characterized in that: The material of the two-dimensional hole injection layer imprinted and transported on the surface of the solidified linear silver electrode is at least one of molybdenum disulfide, graphene, and graphene oxide.
3. The method for preparing a heterojunction diode light-emitting rod driven by a button cell according to claim 1, characterized in that: In the first stage (5), the material of the nano electron transport layer coated last is: oxide, sulfide, selenide or telluride of zinc, titanium, nickel, zirconium, molybdenum, cadmium or tin metal elements.
4. The method for preparing a heterojunction diode light-emitting rod driven by a button cell according to claim 3, characterized in that: The nano electron transport layer is a zinc oxide nanoparticle coating.
Citation Information
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