High-precision gluing process for production of quartz substrate for IC (integrated circuit) chip

Abstract

The invention discloses a high-precision gluing process for production of a quartz substrate for an IC chip, and relates to the technical field of semiconductor manufacturing. In order to solve the problems that a high-precision quartz substrate is generally relatively high in cost, relatively low in productivity and relatively low in yield, and batch production is difficult to realize due to relatively poor consistency caused by the property of the quartz substrate. According to the high-precision gluing process for production of the quartz substrate for the IC chip, high-precision and uniform coating of photoresist on the quartz substrate is realized by setting gluing parameters and combining with the gluing wheel with geometric grooves, the gluing nonuniformity is greatly reduced, the production efficiency and the product quality are improved, and the production cost is reduced by two times of gluing and patterning processes. By means of the method, a complex and multi-layer pattern structure can be formed on the quartz substrate, the accuracy and reliability of products are ensured, material waste and the reject ratio are reduced, the production cost is reduced, remarkable economic benefits and wide application prospects are achieved, and the yield and market competitiveness of the products can be improved.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a high-precision glue coating process for producing a quartz substrate for an IC chip. Background Art

[0002] With the rapid development of the semiconductor industry, the requirements for IC chip manufacturing precision are increasing, and high-precision glue coating technology has become the key to improving product quality and performance. For example, the patent application with the publication number: CN115793397A discloses a high-precision quartz substrate glue coating and its production process. The glue coating is provided with a double-layer structure, which is a first glue layer bonded to the outer surface of the quartz substrate material and a second glue layer connected to the first glue layer. The width ratio of the second glue layer is greater than the width ratio of the first glue layer; the first glue layer is made of the following materials by weight: 10-20 parts of high-temperature resistant silicone resin, 30-50 parts of cresol resin, 11-13 parts of photosensitive agent and 65-70 parts of additives. The glue coating of this process is provided with a double-layer structure. High-temperature resistant silicone resin material is added to the material for preparing the first glue layer, which can withstand high temperatures and impacts. When the second glue layer is pressurized, the first glue layer is not easy to deform, ensuring that only the width of the second glue layer is increased, thereby achieving the shape of the glue coating pattern to reach an inverted T-shaped pattern.

[0003] However, although the above patent realizes the inverted T-shaped gluing pattern by applying the glue twice, the following problems still exist:

[0004] In the prior art, high-precision quartz substrates usually have high costs, low production capacity, low yield, and poor consistency due to the properties of the quartz substrate, making it difficult to achieve mass production. Summary of the invention

[0005] The purpose of the present invention is to provide a high-precision glue coating process for the production of quartz substrates for IC chips. Through two glue coating and patterning processes, a complex, multi-layer pattern structure is formed on the quartz substrate, thereby ensuring the accuracy and reliability of the product, reducing material waste and defective rate, and conducting comprehensive testing on the glue coating quality to ensure that the product quality meets high standards, which helps to improve the product yield and market competitiveness, so as to solve the problems raised in the above-mentioned background technology.

[0006] To achieve the above object, the present invention provides the following technical solutions:

[0007] The high-precision glue coating process for the production of quartz substrates for IC chips includes the following steps:

[0008] S1: Quartz substrate cleaning: Use an ultrasonic cleaner and add a cleaning agent to the ultrasonic cleaner to clean the quartz substrate to remove impurities and stains on the surface of the quartz substrate. After cleaning, dry it to remove grease, dust and other impurities on the surface to ensure that the substrate surface is clean and flat;

[0009] S2: Preparation of glue coating head: preparing glue coating device, obtaining specification parameters of the quartz substrate to be coated with glue, and selecting appropriate glue coating speed, pressure and glue coating amount according to the specification parameters;

[0010] S3: First coating and patterning: Based on the set coating parameters, the coating device is started to coat the surface of the quartz substrate for the first time, and pre-baking, exposure, development, post-baking and etching are performed to form a first layer of pattern structure;

[0011] S4: Second glue coating and patterning: A second layer of glue is coated on the substrate after the first etching, and the second layer of pattern structure is formed through pre-baking, secondary photolithography, development, post-baking and secondary etching, and the excess glue attached to its surface is removed to complete the process;

[0012] S5: Glue coating quality inspection: Inspect the quality of the quartz substrate after the glue coating process to ensure the glue coating accuracy and uniformity, and transfer the qualified quartz substrate to the next manufacturing step.

[0013] Furthermore, the quartz substrate cleaning in S1 also includes activating the quartz substrate: placing the dried quartz substrate in an ultraviolet irradiation device, the ultraviolet intensity in the ultraviolet irradiation device is: 1200mW / cm 2 -1600mW / cm 2 , activation time is 1min-3min.

[0014] Furthermore, the preparation of the gluing head and the setting of the gluing parameters specifically include:

[0015] A glue coating wheel and a glue leveling wheel are arranged in the glue coating device, and the photoresist is evenly attached to the glue coating wheel based on the extrusion of the glue coating wheel and the glue leveling wheel, ensuring that the pressure amount at both ends of the glue coating roller is uniform;

[0016] The surface of the rubber coating wheel has geometric grooves of a trapezoidal structure, and the groove depth is 120μm-200μm;

[0017] The setting of the coating parameters specifically includes: setting the photoresist viscosity, the glue supply amount and the coating speed, wherein the photoresist viscosity is 20mPa·s-25mPa·s, the glue supply amount is not less than 10mL / min, and the coating is performed at a coating speed of 4ml / min-5mL / min.

[0018] Furthermore, the first gluing and patterning in S3 specifically includes the following steps:

[0019] S301: primary glue coating: place the cleaned and dried quartz substrate on the suction cup of the automatic glue coating machine, ensure that the substrate is stably fixed, start the glue coating program, move the glue coating head along the surface of the substrate at a uniform speed, and apply the first layer of glue;

[0020] S302: Pre-baking: After the coating is completed, the quartz substrate is pre-baked at a baking temperature of 90°C-120°C for 1min-2min to remove the solvent in the photoresist and reduce its fluidity during the exposure process;

[0021] S303: primary exposure: loading the pre-baked quartz substrate onto the photolithography machine, adjusting the exposure parameters, ensuring that the pattern is accurately transferred to the photoresist layer, and ensuring the alignment accuracy between the photomask and the quartz substrate, as well as the exposure uniformity during the exposure process;

[0022] S304: primary development: placing the exposed quartz substrate into a developer, developing it according to the corresponding time and temperature provided by the developer supplier, and monitoring the development effect;

[0023] S305: Post-baking: After development, the quartz substrate is post-baked at a baking temperature of 150°C-250°C for 15min-30min to completely cure the photoresist and enhance its durability in subsequent etching and cleaning steps;

[0024] S306: primary etching: etching the quartz substrate according to the pattern of the cured photoresist layer;

[0025] S307: Resin removal and cleaning: After etching is completed, a desinerting agent is used to dissolve the remaining photoresist and clean the quartz substrate to prepare for the next round of resist coating.

[0026] Furthermore, the second gluing and patterning in S4 specifically comprises the following steps:

[0027] S401: Secondary glue coating: coating a second layer of glue on the substrate after the first etching. This layer of glue has different properties to meet the subsequent process requirements;

[0028] S402: Pre-baking: pre-baking is performed using pre-baking parameters slightly lower than those after the first gluing;

[0029] S403: Secondary exposure: using a photolithography machine to expose the second layer of glue;

[0030] S404: Secondary development: placing the exposed quartz substrate into a developer for development treatment to remove the unexposed glue portion;

[0031] S405: post-baking: the same post-baking parameters as those after the first development are used to cure the adhesive layer;

[0032] S406: Secondary etching: etching the quartz substrate according to the pattern of the second layer of glue to form a surface microstructure required for the quartz substrate;

[0033] S407: Glue removal and cleaning: After etching is completed, a glue remover is used to dissolve the remaining second layer of glue, and the quartz substrate is finally cleaned to complete the entire glue coating process.

[0034] Furthermore, in the first coating, the second layer of glue is a photoresist, and a high-temperature resistant silicone resin is added to the first layer of glue, and the added amount of the high-temperature resistant silicone resin is 10-20 parts of the total weight of the photoresist; in the second coating, the second layer of glue is an anti-reflective coating, and a compound containing a metal element is added to it, and the added amount of the compound containing the metal element is 1-10 parts of the total weight of the second layer of glue, wherein the heat resistance of the first layer of glue is higher than the heat resistance of the second layer of glue.

[0035] Furthermore, during the first exposure and the second exposure, the photomask is placed between the light source and the adhesive layer, and the adhesive layer is selectively irradiated with an ultraviolet light source.

[0036] Furthermore, during the primary development and the secondary development, a developer is used to remove the uncured adhesive portion to form a pattern corresponding to the photomask pattern.

[0037] Furthermore, S3 and S4 also include: after the first exposure and the second exposure, intermediate baking is performed, the baking temperature is between 120° C. and 150° C., and the baking time is 3 min to 5 min, which is used to further solidify the photoresist and improve its adhesion to the substrate.

[0038] Furthermore, the gluing quality detection in S5 further includes:

[0039] The multi-point thickness measurement of the coating layer of the quartz substrate after the coating process is completed, and the thickness uniformity of the coating layer is evaluated based on the measurement data, wherein the measurement points are measured at random points;

[0040] The optical properties of the coating layer, the adhesion between the coating layer and the quartz substrate, and the environmental adaptability tests were carried out one by one;

[0041] Generate a quality inspection report for quartz substrates based on thickness measurement results, thickness uniformity evaluation results, and test results.

[0042] Compared with the prior art, the present invention has the following beneficial effects:

[0043] The high-precision glue coating process for the production of quartz substrates for IC chips proposed in the present invention realizes high-precision and uniform coating of photoresist on the quartz substrate by setting glue coating parameters in combination with a glue coating wheel with geometric grooves, greatly reduces glue coating unevenness, improves production efficiency and product quality, and can form a complex, multi-layer pattern structure on the quartz substrate through two glue coating and patterning processes, thereby ensuring the accuracy and reliability of the product, reducing material waste and defective rate, and reducing production costs. It has significant economic benefits and broad application prospects. After the process is completed, the glue coating quality is comprehensively tested to ensure that the product quality meets high standards and is helpful to improve the product yield and market competitiveness. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 This is a process step diagram of high-precision glue coating for producing a quartz substrate for IC chips of the present invention;

[0045] Figure 2 This is a diagram of the first gluing and patterning steps of the present invention;

[0046] Figure 3 This is a diagram of the second gluing and patterning steps of the present invention. DETAILED DESCRIPTION

[0047] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0048] The present invention is further described below in conjunction with specific embodiments:

[0049] like Figure 1 As shown, a high-precision glue coating process for producing a quartz substrate for an IC chip in this embodiment includes the following steps:

[0050] S1: Quartz substrate cleaning: Use an ultrasonic cleaner and add a cleaning agent (such as isopropyl alcohol, deionized water, etc.) to the ultrasonic cleaner to clean the quartz substrate to remove impurities and stains on the surface of the quartz substrate. After cleaning, dry it to remove grease, dust and other impurities on the surface to ensure that the substrate surface is clean and flat;

[0051] Activate the quartz substrate: Place the dried quartz substrate in an ultraviolet irradiation device with an ultraviolet intensity of 1200 mW / cm 2 -1600 mW / cm 2, activation time is 1min-3min;

[0052] S2: Preparation of glue coating head: preparing glue coating device, obtaining specification parameters of the quartz substrate to be coated with glue, and selecting appropriate glue coating speed, pressure and glue coating amount according to the specification parameters;

[0053] Specifically, the preparation of the gluing head and the setting of the gluing parameters include:

[0054] A glue coating wheel and a glue leveling wheel are arranged in the glue coating device, and the photoresist is evenly attached to the glue coating wheel based on the extrusion of the glue coating wheel and the glue leveling wheel, ensuring that the pressure amount at both ends of the glue coating roller is uniform;

[0055] The surface of the rubber coating wheel has geometric grooves of a trapezoidal structure, and the groove depth is 120μm-200μm;

[0056] The setting of the coating parameters specifically includes: setting the photoresist viscosity, the amount of glue supplied and the coating speed, wherein the photoresist viscosity is 20mPa·s-25mPa·s, the amount of glue supplied is not less than 10mL / min, and the coating is performed at a coating speed of 4ml / min-5mL / min;

[0057] In this embodiment, the uniform coating of photoresist on the quartz substrate can be achieved by preparing the coating device and setting the coating parameters, and the coating accuracy is improved. The trapezoidal structure geometric groove helps to further evenly distribute the photoresist, reduce the coating non-uniformity, improve production efficiency and reduce the defective rate, reduce material waste, reduce production costs, and is suitable for quartz substrates of different specifications, with strong flexibility and adaptability.

[0058] S3: First coating and patterning: Based on the set coating parameters, the coating device is started to coat the surface of the quartz substrate for the first time, and pre-baking, exposure, development, post-baking and etching are performed to form a first layer of pattern structure;

[0059] S4: Second glue coating and patterning: A second layer of glue is coated on the substrate after the first etching, and the second layer of pattern structure is formed through pre-baking, secondary photolithography, development, post-baking and secondary etching, and the excess glue attached to its surface is removed to complete the process;

[0060] S5: Glue coating quality inspection: The quality of the quartz substrate after the glue coating process is inspected to ensure the glue coating accuracy and uniformity, and the qualified quartz substrate is transferred to the next manufacturing step, such as doping, deposition or other microelectronics manufacturing processes, and also includes:

[0061] The multi-point thickness measurement of the coating layer of the quartz substrate after the coating process is completed, and the thickness uniformity of the coating layer is evaluated based on the measurement data, wherein the measurement points are measured at random points;

[0062] The optical properties of the coating layer, the adhesion between the coating layer and the quartz substrate, and the environmental adaptability tests were carried out one by one;

[0063] Generate a quality inspection report for quartz substrates based on thickness measurement results, thickness uniformity evaluation results, and test results.

[0064] In this embodiment, by setting the coating parameters in combination with a coating wheel with geometric grooves, high-precision and uniform coating of photoresist on the quartz substrate is achieved, which greatly reduces the unevenness of the coating and improves the production efficiency and product quality. Through two coating and patterning processes, a complex, multi-layer pattern structure can be formed on the quartz substrate, ensuring the accuracy and reliability of the product, reducing material waste and defective rate, and reducing production costs. It has significant economic benefits and broad application prospects. After the process is completed, the coating quality is comprehensively tested to ensure that the product quality meets high standards, which helps to improve the product yield and market competitiveness.

[0065] For better glue coating quality and process control, refer to Figure 2-Figure 3 As shown, a double-layer coating process is performed, and exposure, development and etching are performed to form a refined pattern structure.

[0066] Specifically in this embodiment, the first gluing and patterning in S3 includes the following steps:

[0067] S301: primary glue coating: placing the cleaned and dried quartz substrate on the suction cup of the automatic glue coating machine, ensuring that the quartz substrate is stably fixed, starting the glue coating program, moving the glue coating head along the surface of the substrate at a uniform speed, and coating the first layer of glue;

[0068] S302: Pre-baking: After the glue coating is completed, the quartz substrate is pre-baked at a baking temperature of 90°C-120°C for 1min-2min to remove the solvent in the glue, enhance the adhesion of the glue layer, remove the solvent in the photoresist, and reduce its fluidity during the exposure process;

[0069] S303: primary exposure: loading the pre-baked quartz substrate onto the photolithography machine, adjusting exposure parameters such as exposure energy, time, focal length, etc., to ensure that the pattern is accurately transferred to the photoresist layer, and ensuring the alignment accuracy between the photomask and the quartz substrate and exposure uniformity during the exposure process;

[0070] S304: primary development: placing the exposed quartz substrate into a developer, developing it according to the corresponding time and temperature provided by the developer supplier, and monitoring the development effect;

[0071] S305: Post-baking: After development, the quartz substrate is post-baked at a baking temperature of 150°C-250°C for 15min-30min to completely cure the photoresist and enhance its durability in subsequent etching and cleaning steps;

[0072] S306: primary etching: etching the quartz substrate according to the pattern of the cured photoresist layer;

[0073] S307: Resin removal and cleaning: After etching is completed, a desinerting agent is used to dissolve the remaining photoresist and clean the quartz substrate to prepare for the next round of resist coating.

[0074] Specifically in this embodiment, the second gluing and patterning in S4 includes the following steps:

[0075] S401: Secondary glue coating: Use the suction cup of the automatic glue coating machine to apply a second layer of glue on the quartz substrate after the first etching with the same glue coating parameters;

[0076] S402: Pre-baking: Pre-baking is performed using pre-baking parameters slightly lower than those after the first coating. Specifically, the quartz substrate is pre-baked at a baking temperature of 80°C-110°C for 1min-2min.

[0077] S403: Double exposure: double-exposure the second layer of glue using a photolithography machine;

[0078] S404: secondary development: placing the secondary exposed quartz substrate into a developer for development treatment to remove the unexposed glue portion;

[0079] S405: post-baking: the same post-baking parameters as those after the first development are used to cure the adhesive layer;

[0080] S406: Secondary etching: etching the quartz substrate according to the pattern of the second layer of glue to form a surface microstructure required for the quartz substrate;

[0081] S407: Glue removal and cleaning: After etching is completed, a glue remover is used to dissolve the remaining second layer of glue, and the quartz substrate is finally cleaned to complete the entire glue coating process.

[0082] In this embodiment, the quartz substrate is placed at a preset temperature for pre-baking and post-baking to volatilize the solvent in the adhesive, thereby enhancing the adhesion between the adhesive and the substrate and reducing the fluidity of the photoresist during the exposure process to ensure the accuracy of pattern transfer and improve the wear resistance and developer immersion resistance of the adhesive film. The coating parameters and temperature control are optimized to reduce defects that may occur during the coating process. The quartz substrate is etched a second time to form a desired surface microstructure, which can significantly improve the performance and stability of the coating layer, as well as the clarity and accuracy of the pattern, thereby improving production efficiency, shortening the manufacturing cycle, ensuring the controllability and repeatability of the process, and providing a stable process basis for large-scale production.

[0083] In order to better improve the performance and stability of the glue layer, and improve the clarity and edge sharpness of the development, the photomask is placed between the light source and the glue layer during the first exposure and the second exposure, and the glue layer is selectively irradiated with an ultraviolet light source to ensure the accuracy and consistency of the pattern transfer. Due to its shorter wavelength and higher energy, ultraviolet light can effectively induce photochemical reactions in the photoresist, thereby improving the accuracy and efficiency of exposure; after the first exposure and the second exposure, intermediate baking is performed at a baking temperature between 150°C and 250°C for 3min-5min to further cure the photoresist. The solvent in the photoresist will further evaporate and the polymer chains will further cross-link, thereby enhancing the stability and mechanical strength of the glue layer, improving its adhesion to the substrate, and reducing shedding and deformation in subsequent processes; during the first development and the second development, the uncured adhesive portion is removed using a developer to form a pattern corresponding to the photomask pattern, thereby ensuring the clarity and edge sharpness of the pattern.

[0084] In the traditional glue coating process, deformation or peeling occurs due to insufficient heat resistance, resulting in damage to the glue layer. In addition, during the etching process, the glue and the substrate material do not react sufficiently, resulting in poor etching selectivity, affecting the clarity and accuracy of the pattern.

[0085] In response to the above problems, in this embodiment, in the first coating, the second layer of glue is photoresist, and high-temperature resistant silicone resin is added to the first layer of glue to improve heat resistance. The amount of high-temperature resistant silicone resin added is 10-20 parts by weight of the total weight of the photoresist. The high viscosity and heat-resistant glue ensures stability in high-temperature processes and reduces deformation and peeling of the coating layer; in the second coating, the second layer of glue is an anti-reflective coating, wherein a compound containing metal elements is added to improve etching selectivity, and the amount of the compound containing metal elements added is 1-10 parts by weight of the total weight of the second layer of glue. The first layer of glue and the second layer of glue form a double-layer structure on the quartz substrate, wherein the heat resistance of the first layer of glue is higher than that of the second layer of glue, which not only utilizes the advantages of each material, but also improves the overall stability of the coating layer through the reasonable distribution of thermal stress, effectively reducing deformation and peeling in high-temperature processes.

[0086] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A high-precision glue coating process for the production of quartz substrates for IC chips, characterized in that: The following steps are involved: S1: Quartz substrate cleaning: Use an ultrasonic cleaner and add a cleaning agent to the ultrasonic cleaner to clean the quartz substrate to remove impurities and stains on the surface of the quartz substrate, and then dry it after cleaning; S2: Preparation of glue coating head: preparing a glue coating device, obtaining specification parameters of the quartz substrate to be coated with glue, and setting glue coating parameters according to the specification parameters; S3: First coating and patterning: Based on the set coating parameters, the coating device is started to coat the surface of the quartz substrate for the first time, and pre-baking, exposure, development, post-baking and etching are performed to form a first layer of pattern structure; S4: Second glue coating and patterning: A second layer of glue is coated on the substrate after the first etching, and the second layer of pattern structure is formed through pre-baking, secondary photolithography, development, post-baking and secondary etching, and the excess glue attached to its surface is removed to complete the process; S5: Glue coating quality inspection: inspect the quality of the quartz substrate after the glue coating process, and transfer the qualified quartz substrate to the next manufacturing step.

2. The high-precision glue coating process for producing a quartz substrate for an IC chip according to claim 1, characterized in that: The quartz substrate cleaning in S1 also includes activating the quartz substrate: placing the dried quartz substrate in an ultraviolet irradiation device, the ultraviolet intensity in the ultraviolet irradiation device is: 1200mW / cm 2 -1600 mW / cm 2 , activation time is 1min-3min.

3. The high-precision glue coating process for producing a quartz substrate for an IC chip according to claim 1, characterized in that: The preparation of the gluing head and the setting of the gluing parameters specifically include: A glue coating wheel and a glue leveling wheel are arranged in the glue coating device, and the photoresist is evenly attached to the glue coating wheel based on the squeezing of the glue coating wheel and the glue leveling wheel; The surface of the rubber coating wheel has geometric grooves of a trapezoidal structure, and the groove depth is 120μm-200μm; The setting of the coating parameters specifically includes: setting the photoresist viscosity, the glue supply amount and the coating speed, wherein the photoresist viscosity is 20mPa·s-25mPa·s, the glue supply amount is not less than 10mL / min, and the coating is performed at a coating speed of 4ml / min-5mL / min.

4. The high-precision glue coating process for producing a quartz substrate for an IC chip according to claim 1, characterized in that: The first gluing and patterning in S3 specifically includes the following steps: S301: primary glue coating: placing the quartz substrate on the glue coating equipment, and evenly coating the first layer of glue with a glue coating roller; S302: Pre-baking: After the glue coating is completed, the quartz substrate is pre-baked at a baking temperature of 90°C-120°C for 1min-2min to remove the solvent in the glue and enhance the adhesion of the glue layer; S303: primary exposure: using a photolithography machine to expose the quartz substrate coated with glue, and defining a preset quartz substrate surface pattern through a photomask; S304: primary development: developing the exposed quartz substrate to remove the glue portion that has not been hardened by light, leaving a patterned glue layer; S305: Post-baking: After development, the quartz substrate is post-baked at a baking temperature of 150° C. to 250° C. for 15 min to 30 min to completely cure the photoresist; S306: primary etching: etching the quartz substrate according to the pattern of the cured photoresist layer; S307: Resin removal and cleaning: After etching is completed, a desinerting agent is used to dissolve the remaining photoresist and clean the quartz substrate to prepare for the next round of resist coating.

5. The high-precision glue coating process for producing a quartz substrate for an IC chip according to claim 1, characterized in that: The second gluing and patterning in S4 specifically includes the following steps: S401: Secondary glue coating: coating a second layer of glue on the substrate after the first etching; S402: Pre-baking: pre-baking the quartz substrate at a baking temperature of 80°C-110°C for 1min-2min; S403: Secondary exposure: using a photolithography machine to expose the second layer of glue; S404: Secondary development: placing the exposed quartz substrate into a developer for development treatment to remove the unexposed glue portion; S405: post-baking: the same post-baking parameters as those after the first development are used to cure the adhesive layer; S406: Secondary etching: etching the quartz substrate according to the pattern of the second layer of glue to form a surface microstructure required for the quartz substrate; S407: Glue removal and cleaning: After etching is completed, a glue remover is used to dissolve the remaining second layer of glue, and the quartz substrate is finally cleaned to complete the entire glue coating process.

6. The high-precision glue coating process for producing a quartz substrate for an IC chip as claimed in claim 4, characterized in that: In the first glue coating, the second glue layer is photoresist; in the second glue coating, the second glue layer is anti-reflective coating; wherein the heat resistance of the first glue layer is higher than the heat resistance of the second glue layer.

7. The high-precision glue coating process for producing a quartz substrate for IC chips according to claim 6, characterized in that: During the first exposure and the second exposure, the photomask is placed between the light source and the adhesive layer, and the adhesive layer is selectively irradiated with an ultraviolet light source.

8. The high-precision glue coating process for producing a quartz substrate for an IC chip as claimed in claim 5, characterized in that: During the primary development and the secondary development, the uncured adhesive portion is removed using a developer to form a pattern corresponding to the photomask pattern.

9. The high-precision glue coating process for producing a quartz substrate for an IC chip according to claim 1, characterized in that: The S3 and S4 further include: performing intermediate baking after the primary exposure and the secondary exposure, with the baking temperature being between 120° C. and 150° C. and the baking time being 3 min. and 5 min., for further curing the photoresist.

10. The high-precision glue coating process for producing a quartz substrate for an IC chip according to claim 1, characterized in that: The gluing quality detection in S5 also includes: The multi-point thickness measurement of the coating layer of the quartz substrate after the coating process is completed, and the thickness uniformity of the coating layer is evaluated based on the measurement data, wherein the measurement points are measured at random points; The optical properties of the coating layer, the adhesion between the coating layer and the quartz substrate, and the environmental adaptability tests were carried out one by one; Generate a quality inspection report for quartz substrates based on thickness measurement results, thickness uniformity evaluation results, and test results.

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