Wafer correction device and control method

Abstract

This invention relates to the field of wafer fabrication technology, and particularly to a wafer correction device, comprising a base, a stretching unit, and a controller. The base includes a placement plane configured to hold the wafer; therefore, the base itself should be mounted on a horizontal plane, and the placement plane should also be parallel to the horizontal plane. This wafer correction device, through a stretching unit disposed within the base and including a vertically movable adsorption component and a vacuum generator connected thereto, achieves direct correction of wafer warpage. This effectively solves the problem in existing technologies where relying solely on material improvements, process parameter adjustments, and equipment adjustments cannot completely eliminate wafer warpage. Furthermore, because the adsorption component can move vertically in a controlled manner, the warped area can be precisely corrected. The connection between the controller and the vacuum generator enables dynamic adjustment of the negative pressure environment, allowing the device to dynamically correct warped wafers during semiconductor manufacturing.

Description

Technical Field

[0001] This invention relates to wafer fabrication, and more particularly to a wafer alignment device. Background Technology

[0002] Wafers play a crucial role in semiconductor manufacturing, and their surface flatness is essential for the success of multiple process steps. Wafer warpage is a common phenomenon in semiconductor manufacturing, affecting various processes such as photolithography, chemical mechanical planarization (CMP), ion implantation, etching, packaging, and testing. Even minute warpages on the wafer surface can cause numerous problems, such as alignment errors, uneven material removal, uneven doping distribution, uneven etching, and issues like chipping or poor contact during packaging, thus impacting device performance, yield, and production efficiency.

[0003] Therefore, to mitigate the adverse effects of wafer warpage, several measures are implemented during semiconductor manufacturing. First, material selection can be improved by using materials with similar coefficients of thermal expansion to reduce warpage caused by interlayer mismatch. Second, process parameters can be optimized; for example, in high-temperature processing and chemical processes, the rate of temperature change can be controlled to reduce thermal stress. Third, pre-detection and screening are crucial; non-contact measurement equipment can be used to detect the degree of wafer warpage, identifying severely warped wafers at an early stage to prevent them from entering critical processes. Finally, process equipment can be adjusted, modifying equipment settings to accommodate warped wafers, ensuring production continuity and equipment stability.

[0004] However, existing methods for avoiding wafer warpage mainly involve optimizing materials, adjusting process parameters, and improving process equipment. While these measures mitigate the adverse effects of wafer warpage to some extent, they still have many shortcomings. First, optimizing materials relies on finding materials with similar coefficients of thermal expansion to reduce warpage. However, the material properties vary significantly across different processes, making it impossible to completely eliminate warpage, especially in multilayer stacking. Furthermore, material improvements often come with high costs, increasing manufacturing complexity. Second, adjusting process parameters, such as optimizing temperature control and chemical treatments, can reduce warpage caused by thermal stress. However, due to the complex structure of wafers and the variable process environment, it is difficult to solve all warpage problems through the optimization of a single parameter. Even slight temperature changes can lead to localized stress concentrations, resulting in minor warpage. Finally, improving process equipment can adapt to warped wafers to some extent by adjusting the equipment to ensure production continuity. However, these adjustments are mostly based on overall processing and are insufficient to address localized wafer warpage, especially when processing wafers with different surface roughness, where precise control methods are lacking. Therefore, these existing measures can only reduce the impact of warpage at the overall level and cannot achieve precise correction of warped wafers. Therefore, there is an urgent need for a wafer correction device that can precisely handle warped wafers during production to further improve process stability and product yield. Summary of the Invention

[0005] The purpose of this invention is to provide a wafer correction device capable of accurately correcting warped wafers.

[0006] The technical solution adopted by the present invention to solve the above problems is: a wafer correction device, comprising:

[0007] The base includes a material placement plane for placing wafers. The base has a first accommodating space on the side of the material placement plane. The extension direction of the first accommodating space is defined as a first direction, which is perpendicular to the material placement plane.

[0008] A stretching unit, disposed within the first accommodating space, includes:

[0009] An adsorption assembly, which is controlled to move in the first direction.

[0010] A vacuum generator, which is connected to the adsorption assembly.

[0011] A controller, which is connected to the vacuum generator.

[0012] When the wafer calibration device is in operation, the adsorption component adsorbs onto the wafer surface placed on the material placement plane, and the adsorption component moves in a controlled manner along the first direction so that the part of the wafer adsorbed by the adsorption component deforms in the first direction.

[0013] Preferably, the stretching unit comprises:

[0014] A driving component is disposed within the first accommodating space, the driving component is connected to the adsorption component to move the adsorption component along the first direction, and the driving component is connected to the controller.

[0015] Preferably, the driving component includes:

[0016] A first telescopic member is disposed within the first accommodating space. The first telescopic member includes a first movable end, which moves in a controlled manner. The direction of movement of the first movable end is configured to be parallel to the first direction. The first movable end is connected to the adsorption component.

[0017] Preferably, the stretching unit comprises:

[0018] A telescopic assembly, wherein the vacuum generator is connected to the adsorption assembly via the telescopic assembly, and the three are internally interconnected; the telescopic assembly includes:

[0019] A first connecting part, one end of which is connected to the adsorption component, and the two are internally connected.

[0020] A telescopic portion, one end of which is connected to the other end of the first connecting portion, the two being internally connected, and the telescopic direction of the telescopic portion is configured to be along the first direction.

[0021] The second connecting part has one end connected to the other end of the telescopic part, and the other end of the second connecting part is connected to the vacuum generator, and the two are internally connected.

[0022] Preferably, the driving component includes:

[0023] The second telescopic member is disposed within the first accommodating space, and the second telescopic member includes a mounting part and a second movable end. The second movable end is connected to the mounting part in a controlled movement manner, and the movement direction of the second movable end is configured to be parallel to the first direction. The mounting part is fixedly connected to the base, and the second movable end is connected to the second connecting part so that the second connecting part moves with the second movable end.

[0024] Preferably, the adsorption component includes:

[0025] The load-bearing component is located at the first movable end of the first telescopic component.

[0026] A vacuum suction cup is disposed on the side of the load member away from the first telescopic member. The vacuum suction cup is connected to the first connecting part, so that the vacuum suction cup is connected to the vacuum generator.

[0027] Preferably, each stretching unit includes at least two adsorption components, and each stretching unit further includes a driving component, a telescopic component, and a vacuum generator, which are arranged in a one-to-one correspondence with each adsorption component.

[0028] Preferably, the vacuum suction cup includes:

[0029] The suction section is adsorbed onto the wafer surface when the wafer calibration device is in operation.

[0030] An elastic segment is connected to and communicates with the suction section, and the elastic segment is configured to undergo elastic deformation.

[0031] The connecting end is connected to and communicates with the end of the elastic segment that is away from the suction part.

[0032] Specifically, a wafer calibration device includes a vision recognition component connected to the controller, and the base has a plurality of first accommodating spaces on the material placement plane side, each of the first accommodating spaces being provided with the stretching unit.

[0033] The control method for the wafer correction device includes:

[0034] First detection data of a wafer placed on the placement plane is obtained. The first detection data is the height difference data of the wafer in the first direction obtained by the vision recognition component for detecting the wafer placed on the placement plane.

[0035] The warpage position of the wafer placed on the placement plane is determined based on the first detection data.

[0036] The stretching unit corresponding to the warpage position of the wafer placed on the placement plane is determined.

[0037] A first control signal is sent to the stretching unit at the corresponding position. The first control signal is used to trigger the driving component in the stretching unit at the corresponding position to move the stretching unit in the first direction so that the adsorption component in the stretching unit at the corresponding position contacts the wafer surface.

[0038] A second control signal is sent to the stretching unit at the corresponding position. The second control signal is used to trigger the vacuum generator in the stretching unit at the corresponding position so that the adsorption component in the stretching unit at the corresponding position adsorbs the wafer.

[0039] A third control signal is sent to the stretching unit at the corresponding position. The third control signal is used to trigger the drive component in the stretching unit at the corresponding position to pull or push the warped part of the wafer toward a preset plane.

[0040] Acquire second detection data of the wafer placed on the placement plane. The second detection data is the height difference data of the wafer in the first direction obtained by the vision recognition component for detecting the calibrated wafer placed on the placement plane.

[0041] If the second detection data is not within the preset range, the warpage position of the wafer on the placement plane is determined again based on the second detection data, and the first control signal, the second control signal and the third control signal are sent again to the stretching unit at the corresponding position so that the stretching unit at the corresponding position repeats the correction action until the second detection data is within the preset range.

[0042] If the second detection data is within a preset range, a fourth control signal is sent to the stretching unit at the corresponding position. The fourth control signal is used to stop the stretching unit at the corresponding position from operating.

[0043] Preferably, the adsorption assembly further includes a vacuum detector connected to the load element to detect the vacuum level in the adsorption area when the vacuum chuck adsorbs the wafer, and the vacuum detector is connected to the controller.

[0044] After sending a second control signal to the stretching unit at the corresponding position, the second control signal being used to trigger the vacuum generator in the stretching unit at the corresponding position so that the adsorption component in the stretching unit at the corresponding position adsorbs the wafer, the process further includes the following steps:

[0045] Acquire first vacuum detection data and second vacuum detection data. The first vacuum detection data is the vacuum level data obtained by the vacuum detector detecting the adsorption component and the wafer adsorption site at the corresponding position. The second vacuum detection data is the vacuum level data obtained by the vacuum detector detecting the adsorption component and the wafer adsorption site at the corresponding position after a preset time.

[0046] Determine whether the difference between the first vacuum detection data and the second vacuum detection data exceeds a preset value.

[0047] If the difference between the first vacuum detection data and the second vacuum detection data exceeds a preset range, the area on the wafer covered by the adsorption component in the stretching unit at the corresponding position is a vulnerable area. A fifth control signal is sent to the stretching unit corresponding to the vulnerable area. The fifth control signal is used to trigger the vacuum generator in the stretching unit corresponding to the vulnerable area, so as to reduce the vacuum level in the adsorption space corresponding to the vulnerable area.

[0048] If the difference between the first vacuum detection data and the second vacuum detection data is lower than or within a preset range, the area on the wafer covered by the adsorption component in the stretching unit at the corresponding position is an adsorption-capable area, and the vacuum level in the adsorption space corresponding to the adsorption-capable area remains unchanged.

[0049] The beneficial effects of the embodiments of the present invention are as follows:

[0050] This wafer correction device, through a vertically movable adsorption component housed within a base and a stretching unit connected to a vacuum generator, achieves direct correction of wafer warpage. This solution utilizes vacuum adsorption and controlled stretching to effectively address the problem in existing technologies where material improvements, process parameter adjustments, and equipment adjustments alone cannot completely eliminate wafer warpage. Furthermore, the adsorption component can move vertically in a controlled manner to precisely correct warpage areas, avoiding the limitations of existing technologies that can only handle warpage as a whole. Through the connection between the controller and the vacuum generator, the negative pressure environment can be dynamically adjusted, enabling the device to dynamically correct warped wafers during semiconductor manufacturing, significantly improving product yield and manufacturing stability.

[0051] This wafer calibration device employs a control method utilizing technologies such as a vision recognition component, a stretching unit, a vacuum generator, and a vacuum detector. This effectively solves the problem of inaccurate wafer warpage correction in existing technologies that rely on material improvements, process parameter adjustments, and equipment modifications. First, the vision recognition component acquires real-time height difference data from the wafer, accurately identifying warpage areas and improving calibration precision through precise positioning of these areas. Second, the coordinated operation of multiple stretching units enables regional processing of warpage areas, avoiding the limitations of overall adjustment in existing technologies. Third, vacuum adsorption technology combined with the dynamic feedback mechanism of the vacuum detector ensures real-time monitoring of the vacuum level in the adsorption space during calibration, effectively identifying and protecting vulnerable areas of the wafer to prevent breakage. Furthermore, through multiple calibration actions and feedback detection, the system automatically completes warpage adjustment until the wafer warpage falls within a preset range, ensuring the restoration of wafer surface flatness. This ultimately achieves the technical effects of improving wafer flatness, reducing process errors, and increasing product yield. Attached Figure Description

[0052] Figure 1 This is a schematic structural diagram of a wafer correction device in one embodiment of the present invention.

[0053] Figure 2 This is a schematic structural diagram of the stretching unit in one embodiment of the present invention.

[0054] Figure 3 This is a schematic enlarged view of the height difference of each warped part of the wafer in a first direction when the wafer is placed on the material placement plane in one embodiment of the present invention.

[0055] Figure 4 This is a schematic diagram showing the state of the adsorption component in a concave position according to one embodiment of the present invention.

[0056] Figure 5 This is a schematic structural diagram of the adsorption component in a reference position according to an embodiment of the present invention.

[0057] Figure 6 This is a schematic structural diagram of the adsorption component in an upwardly convex position according to an embodiment of the present invention.

[0058] Figure 7 This is a schematic diagram of a control method for a wafer calibration device according to an embodiment of the present invention. Figure 1 .

[0059] Figure 8 This is a schematic diagram of a control method for a wafer calibration device according to an embodiment of the present invention. Figure 2 .

[0060] Wherein: 100, base; 110, material placement plane; 200, stretching unit; 210, adsorption assembly; 211, load component; 212, vacuum suction cup; 2121, suction part; 2122, elastic section; 2123, connecting end; 213, vacuum detector; 220, vacuum generator; 230, telescopic assembly; 231, first connecting part; 232, telescopic part; 233, second connecting part; 240, drive assembly; 241, first telescopic component; 2411, first movable end; 242, second telescopic component; 2421, second movable end; 300, controller; 400, visual recognition assembly. Detailed Implementation

[0061] The specific embodiments of the present invention will be described in further detail below with reference to the accompanying drawings and examples. The following examples are for illustrative purposes only and are not intended to limit the scope of the invention.

[0062] In the description of this application, it should be understood that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as limiting the scope of protection of this application. Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0063] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art will understand the specific meaning of the above terms in this application based on the specific circumstances.

[0064] like Figure 1-2As shown, a preferred embodiment of this application provides a wafer alignment device, including a base 100, a stretching unit 200, and a controller 300. The base 100 includes a placement plane 110, which is configured to place a wafer. Therefore, the base 100 itself should be mounted on a horizontal plane, and the placement plane 110 should also be parallel to the horizontal plane. The base 100 has a first accommodating space on the side of the placement plane 110. The extension direction of the first accommodating space is defined as a first direction, which is perpendicular to the placement plane 110, that is, the first direction should normally be perpendicular to the horizontal plane. The stretching unit 200 is disposed within the first accommodating space. The stretching unit 200 includes an adsorption component 210 and a vacuum generator 220. The adsorption component 210 is a controlled component, whose movement is controlled by an external mechanism. It moves along the extension direction of the first accommodating space, that is, along a first direction perpendicular to the horizontal plane. The vacuum generator 220 can be specifically embodied as a vacuum generator 220. The vacuum generator 220 and the adsorption component 210 should be connected through a pipe fitting, so that the vacuum generator 220 and the adsorption component 210 are connected to each other, so that a negative pressure vacuum environment is generated in the adsorption component 210 when the vacuum generator 220 is running. The controller 300 can be specifically embodied as a PLC industrial control computer. The connection method between the controller 300 and the vacuum generator 220 can be either wired connection or wireless communication connection, which should be adapted to the actual application scenario. When the wafer alignment device is in operation, the adsorption component 210 contacts the wafer surface placed on the placement plane 110 and is adsorbed onto the wafer surface by the vacuum generator 220. The adsorption component 210 is then moved in a controlled manner in the first direction, causing the warped portion of the wafer to be pulled or pushed towards a preset plane. The preset plane is a plane parallel to the horizontal plane. Ideally, after the warped portion of the wafer is flattened, both the side of the wafer facing the placement plane 110 and the side facing away from the placement plane 110 should be parallel to the preset plane. In a real environment, both sides of the flattened wafer should also be approximately parallel to the preset plane.

[0065] In this embodiment, a stretching unit 200, which is set inside the base 100 and includes an adsorption component 210 that can move vertically and a vacuum generator 220 connected thereto, is used to directly correct the warped parts of the wafer. This solution utilizes vacuum adsorption and controlled stretching to effectively solve the problem that existing technologies cannot completely eliminate wafer warping by relying solely on material improvements, process parameter adjustments, and equipment adjustments. Furthermore, the adsorption component 210 can move vertically in a controlled manner to accurately correct the warped area, avoiding the limitation of existing technologies that can only handle warping as a whole. Through the connection between the controller 300 and the vacuum generator 220, the negative pressure environment can be dynamically adjusted, enabling the device to dynamically correct warped wafers during semiconductor manufacturing, significantly improving product yield and manufacturing stability.

[0066] In some embodiments, to drive the adsorption assembly 210 to move along a first direction, the stretching unit 200 further includes a driving assembly 240, which is also installed within the first accommodating space. The driving assembly 240 is connected to the adsorption assembly 210 to move the adsorption assembly 210 along the first direction, and is connected to the controller 300 to be driven by the controller 300. To drive the adsorption assembly 210 to move, the driving assembly 240 may include a first telescopic member 241 disposed within the first accommodating space. The first telescopic member 241 includes a first movable end 2411, which moves in a controlled manner. The direction of movement of the first movable end 2411 is configured to be parallel to the first direction. The first movable end 2411 is connected to the adsorption assembly 210 to drive the adsorption assembly 210 to move toward or away from the wafer. The first telescopic component 241 can be embodied in the form of an electric push rod, a hydraulic cylinder, or a pneumatic cylinder. In this embodiment, a pneumatic cylinder can be used as an example. The cylinder body is fixedly connected within the first accommodating space, specifically as follows: Figure 2 As shown.

[0067] In this embodiment, by employing a technique that connects the driving component 240 and the adsorption component 210, and by including a first telescopic member 241 in the driving component 240, the adsorption component 210 can be moved along a first direction. This effectively solves the problems of low accuracy and inability to finely adjust for different warpage positions during wafer warpage correction in the prior art. Driven by the first telescopic member 241 (such as an electric push rod, hydraulic cylinder, or pneumatic cylinder), the adsorption component 210 can be controlled to approach or move away from the wafer in a direction perpendicular to the wafer surface, ensuring precise stretching correction at different warpage positions. In particular, the use of a pneumatic cylinder provides precise displacement control while ensuring the stability of the stretching force, avoiding damage to the wafer surface due to uneven tension. This achieves fine correction of the wafer warpage, improves correction accuracy, shortens correction time, and ultimately enhances product yield and manufacturing process stability.

[0068] In some embodiments, in order to connect the vacuum generator 220 and the adsorption component 210 and to satisfy the condition that the adsorption component 210 can move relative to the vacuum generator 220, the stretching unit 200 further includes a telescopic component 230. The vacuum generator 220 is connected to the adsorption component 210 through the telescopic component 230, and the three are internally connected. The telescopic component 230 includes a first connecting part 231, a telescopic part 232, and a second connecting part 233. One end of the first connecting part 231 is connected to the adsorption component 210, and the two are internally connected. One end of the telescopic part 232 is connected to the other end of the first connecting part 231, and the two are internally connected. The telescopic direction of the telescopic part 232 is configured to be along the first direction. One end of the second connecting part 233 is connected to the other end of the telescopic part 232, and the other end of the second connecting part 233 is connected to the vacuum generator 220.

[0069] In this embodiment, the first connecting part 231, the second connecting part 233, and the telescopic part 232 are all tubular components, and their opposite ends are sealed together. Specifically, the three can be integrally formed. The telescopic part 232, to accommodate expansion and contraction, can be a corrugated pipe, allowing it to expand and contract when the first telescopic member 241 moves the adsorption assembly 210, thus preventing deformation of the connecting pipes. Specifically, as shown... Figure 1 and Figure 2 As shown. It can be understood that an online vacuum pressure valve can be installed on the pipeline (expansion assembly 230) connecting the vacuum generator 220 and the adsorption assembly 210, and the online vacuum pressure valve is connected to the controller 300, so that the controller 300 can adjust the magnitude of the adsorption force applied by the adsorption assembly 210 to the wafer through the online vacuum pressure valve.

[0070] In this embodiment, the use of a telescopic assembly 230 to connect the vacuum generator 220 and the adsorption assembly 210, with the telescopic assembly 230 comprising a first connecting part 231, a telescopic part 232, and a second connecting part 233, all connected in a sealed manner while maintaining internal communication, and particularly the design of the telescopic part 232 as a bellows structure, which can adapt to the movement requirements of the adsorption assembly 210 and extend and retract, effectively solves the problem of unstable adsorption caused by pipe deformation when the vacuum connecting pipe moves during the movement of the adsorption assembly 210 in the prior art. Through this technical solution, when the adsorption assembly 210 moves in the first direction, the telescopic assembly 230 can ensure the continuity and sealing of vacuum adsorption, not only avoiding the twisting and deformation of the connecting pipe, but also achieving high adaptability and flexibility in the wafer correction process, thereby improving the stability and operational accuracy of the device during the wafer warpage correction process.

[0071] Furthermore, in some embodiments, in order to expand the movement range of the adsorption component 210, the driving component 240 further includes a second telescopic member 242. The second telescopic member 242 is also installed in the first accommodating space and is located below the first telescopic member 241, that is, on the side of the first telescopic member 241 away from the material placement plane 110. The second telescopic member 242 includes a second movable end 2421, and the second movable end 2421 moves in a controlled manner. The second movable end 2421 is connected to the second connecting part 233, so that the second connecting part 233 moves with the second movable end 2421, thereby causing the telescopic part 232 to extend and retract.

[0072] In this embodiment, the second telescopic member 242 can also be embodied as a cylinder. Either the cylinder body is fixedly installed within the first accommodating space, with the piston end considered as the second movable end 2421, or the piston of the cylinder is fixedly connected to the base 100 to allow the cylinder body to move; in this case, the cylinder body is the second movable end 2421. Furthermore, to accommodate the requirement of expanding the movement range of the adsorption assembly 210, the movement direction of the second movable end 2421 of the second telescopic member 242 is parallel and opposite to the movement direction of the first movable end 2411 of the first telescopic member 241. Specifically, the adsorption assembly 210 is divided into three working heights, such as... Figures 3 to 6As shown, these correspond to the convex position AA, the reference position BB, and the concave position CC of the warped wafer, respectively. In the reference position, the first movable end 2411 of the first telescopic member 241 is in a contracted state, and the second movable end 2421 of the second telescopic member 242 is in an extended state. At this time, the compression of the telescopic part 232 is moderate, and the adsorption component 210 will adsorb the part of the wafer on the placement plane 110 near the preset plane. In the concave position, the first movable end 2411 of the first telescopic member 241 is in a contracted state, and the second movable end 2421 of the second telescopic member 242 is in a contracted state. At this time, the telescopic part 232 is compressed to the minimum, and the adsorption component 210 will adsorb the concave part of the wafer on the placement plane 110. In the convex position, the first movable end 2411 of the first telescopic member 241 is in an extended state, and the second movable end 2421 of the second telescopic member 242 is in an extended state. At this time, the telescopic part 232 is stretched to the maximum, and the adsorption component 210 will adsorb the convex part of the wafer on the placement plane 110.

[0073] In this embodiment, by employing a technique where the second telescopic component 242 works in conjunction with the first telescopic component 241, the second telescopic component 242 is installed below the first telescopic component 241 and connected to the second connecting part 233 via its second movable end 2421. This achieves further extension and retraction of the telescopic component 230 and expands the movement range of the adsorption component 210, effectively solving the problem in the prior art where the movement range of the adsorption component 210 is limited and cannot accurately handle different warped parts of the wafer. Through this technical solution, the adsorption component 210 can move flexibly at different heights, such as the convex position, the reference position, and the concave position. By adjusting the cooperation of the two telescopic components, precise adsorption and correction of different parts of the wafer can be achieved, thereby ensuring fine processing of each part during the wafer warpage correction process. This greatly improves the adaptability of the device, the correction accuracy, and the control effect of wafer surface flatness.

[0074] It is understandable that both the first telescopic member 241 and the second telescopic member 242 are constructed with passages for the telescopic assembly 230 and other pipe fittings to pass through without affecting the sealing performance.

[0075] In some embodiments, to make the adsorption assembly 210 more specific, the adsorption assembly 210 includes a load member 211 and a vacuum suction cup 212. The load member 211 is fixedly installed at the first movable end 2411 of the first telescopic member 241 so as to move together with the first movable end 2411. The vacuum suction cup 212 is installed on the side of the load member 211 away from the first telescopic member 241. The vacuum suction cup 212 is connected to one end of the first connecting part 231 so that the vacuum suction cup 212 is connected to the vacuum generator 220, so that the vacuum suction cup 212 can generate negative pressure when the vacuum generator 220 is running, thereby adsorbing the wafer.

[0076] It should be noted that an adsorption component 210 typically includes a complex component 211 and one or two vacuum suction cups 212. An adsorption component 210, a telescopic component 230, a vacuum generator 220, and a drive component 240 can be considered as a single set of adsorption components. Each stretching unit 200 includes at least two sets of adsorption components. However, in some embodiments, two vacuum suction cups 212 can also be connected to a vacuum generator 220 through corresponding telescopic components 230. By simply adding a switching valve between the telescopic component 230 and the vacuum generator 220, the rapid switching between different sets of adsorption components can be completed quickly. Specifically, this can be applied to the tenth step of the control method for the wafer correction device described later, to switch between the high-pressure suction cup group (adsorption component) and the low-pressure suction cup group (adsorption component) in the same stretching unit 200 described later. In some embodiments, each stretching unit 200 has four sets of adsorption components, including four vacuum suction cups 212 in each set. The four vacuum suction cups 212 are arranged in pairs, and the two sets of vacuum suction cups 212 can be arranged in parallel or crosswise, depending on the application environment. In some specific embodiments, the two sets of vacuum suction cups 212 are arranged crosswise. One set can be controlled as a low-pressure suction cup set under the action of the controller 300 and the corresponding vacuum generator 220, and the other set can be controlled as a high-pressure suction cup set under the action of the controller 300 and the corresponding vacuum generator 220. This is to cooperate with the control method described later, using the low-pressure suction cup set to adsorb the vulnerable areas of the wafer, and using the high-pressure suction cup set to adsorb the adsorbable areas of the wafer, so as to provide sufficient adsorption force for the entire wafer of the suction cup.

[0077] In this embodiment, the use of a load member 211 and a vacuum suction cup 212, where the load member 211 is fixed at the first movable end 2411 of the first telescopic member 241 and connected to the vacuum generator 220 via the vacuum suction cup 212, allows the vacuum suction cup 212 to generate negative pressure during the operation of the vacuum generator 220, thereby achieving wafer adsorption. Therefore, this effectively solves the problems of the simple structure and insufficient adsorption force of the adsorption component 210 in the prior art. Through this design, the structure of the adsorption component 210 is more specific, and the adsorption force is improved. Especially with the cooperation of multiple adsorption components, by controlling the low-pressure and high-pressure suction cup groups to adsorb the vulnerable and adsorbable areas of the wafer respectively, the overall adsorption stability and safety of the device on the wafer are further enhanced, ensuring the adsorption effect during wafer calibration, reducing the risk of wafer damage, and significantly improving the efficiency and accuracy of wafer calibration.

[0078] Because the wafer has an irregularly distributed uneven surface, adjacent uneven positions will extend or contract horizontally during the process of vertically flattening the wafer. To balance the horizontal extension or contraction, the vacuum chuck 212 includes a suction part 2121, an elastic segment 2122, and a connecting end 2123. The suction part 2121 is adsorbed onto the wafer surface when the wafer calibration device is in operation. The elastic segment 2122 has a cylindrical structure and is connected to the suction part 2121, and the two are internally connected. The elastic segment 2122 is configured to undergo elastic deformation, thereby counteracting the horizontal extension or contraction caused by the vertical flattening of adjacent uneven positions. The connecting end 2123 is connected to the end of the elastic segment 2122 away from the suction part 2121, and the connecting end 2123 is connected to the elastic segment 2122.

[0079] In this embodiment, the use of the suction section 2121, the elastic segment 2122, and the connecting end 2123, particularly the design of the elastic segment 2122, allows it to undergo elastic deformation during wafer alignment. This effectively counteracts the horizontal extension or contraction caused by the irregular distribution of the wafer's uneven surface during vertical flattening. Therefore, it effectively solves the risk of wafer breakage due to adjacent reverse displacement during the uneven flattening process. Through this structural design, the elastic segment 2122 can flexibly adjust its position to compensate when the vacuum chuck 212 vertically stretches the wafer, ensuring the integrity of the wafer during alignment, preventing breakage, improving the stability and safety of wafer alignment, and significantly increasing the yield of wafer processing.

[0080] In some embodiments, the wafer alignment device further includes a vacuum breaking valve. Each stretching unit 200 is equipped with a separate vacuum breaking valve so that when the vacuum chuck 212 is accidentally adsorbed to the wafer, the vacuum chuck 212 can be separated from the wafer through the vacuum breaking valve. Specifically, the vacuum breaking valve is connected to the telescopic assembly 230 and communicates with the air passage of the stretching unit 200.

[0081] To further improve the control of the above-mentioned wafer correction device, the wafer correction device also includes a vision recognition component 400. The vision recognition component 400 (not shown in the figure) is prior art. The vision recognition component 400 is connected to the controller 300. The base 100 has a plurality of first accommodating spaces on the side of the material placement plane 110. Each first accommodating space is provided with the stretching unit 200.

[0082] The control method for the wafer correction device, such as Figure 7 As shown, the specific steps include the following:

[0083] The first step involves acquiring first detection data of the wafer placed on the placement plane 110 via the controller 300. This first detection data is the height difference data of the wafer in the first direction, obtained by the vision recognition component 400 through detection of the wafer placed on the placement plane 110. Specifically, as follows... Figure 3 As shown.

[0084] In this step, the controller 300 detects the wafer placed on the placement plane 110 and obtains the first detection data of the wafer. The specific operation process is as follows:

[0085] The controller 300 receives a detection command and activates the vision recognition component 400. This device scans and analyzes the wafer surface on the placement plane 110 using a high-precision camera or sensor. The vision recognition component 400 can accurately capture minute height variations in different areas of the wafer.

[0086] After scanning the entire surface of the wafer, the vision recognition component 400 acquires the height data of the wafer in a first direction. This height data can reflect the surface flatness of the wafer, especially whether there is warping or unevenness on the wafer surface.

[0087] The vision recognition component 400 compares height data from different regions to obtain the height differences at different locations on the wafer surface, especially the deviation of warped areas from the reference plane. This height difference data helps the system determine whether the overall shape of the wafer surface meets requirements, or whether certain areas of the wafer require further correction.

[0088] The first detection data collected by the visual recognition component 400 is transmitted to the controller 300. Based on this height difference data and a preset correction algorithm, the controller 300 determines the specific warpage of each area on the wafer surface.

[0089] After receiving the height difference data, the controller 300 prepares to initiate subsequent correction actions, such as locating the warped position, selecting the appropriate tensioning unit 200, and preparing to perform the correction.

[0090] Through the above process, the system can accurately determine the height difference of the wafer in the first direction, providing an accurate basis for subsequent wafer calibration.

[0091] In the second step, the controller 300 determines the warpage position of the wafer placed on the placement plane 110 based on the first detection data.

[0092] In the second step, the controller 300 determines the warpage position of the wafer placed on the placement plane 110 based on the first detection data obtained in the first step. The specific operation process is as follows:

[0093] After receiving the first detection data, the controller 300 begins processing it. The first detection data typically includes height information at various locations on the wafer surface. The controller 300 compares this height data with a system-preset reference plane or a desired flatness value to analyze height differences on the wafer surface.

[0094] The controller 300 calculates the height deviation of various regions of the wafer to identify areas that significantly exceed the allowable range. Wafer warping typically manifests as significant bulges or depressions in certain areas relative to a reference plane. The controller 300 automatically identifies these abnormal areas and marks them as wafer warping regions.

[0095] If a portion of the wafer is significantly higher than the reference plane, that portion is identified as a "convex" region. If a portion of the wafer is significantly lower than the reference plane, that portion is identified as a "recessed" region.

[0096] To accurately calibrate the wafer, the controller 300 needs not only to identify warped regions but also to determine the specific coordinates of these warped locations. By analyzing height data, the controller 300 can determine the specific spatial location of the wafer warped regions, typically expressed in two-dimensional plane coordinates (X, Y) and height deviation values ​​(Z) to represent the accurate location of the warped regions.

[0097] Once the controller 300 determines the location of the warp, it stores this information in the system to prepare for subsequent correction operations. Information about each warp region, including its type (protrusion or depression), specific coordinates, and height deviation, is used to determine the correction plan.

[0098] In some embodiments, the controller 300 can compare multiple detection results using an algorithm. If the detected warping position differs significantly from the preset expected value, it may trigger further data correction or sensor calibration.

[0099] Through the above steps, the system can accurately determine the location of wafer warpage, so that the corresponding stretching unit 200 can perform precise correction operations in the next step to ensure that the flatness of the wafer surface meets the requirements.

[0100] The third step is to determine the stretching unit 200 corresponding to the warped position of the wafer placed on the material placement plane 110, and send a first control signal to the stretching unit 200 at the corresponding position. The first control signal is used to trigger the driving component 240 in the stretching unit 200 at the corresponding position to drive the stretching unit 200 to move in the first direction, so that the adsorption component 210 in the stretching unit 200 at the corresponding position contacts the wafer surface.

[0101] In the third step, the system precisely positions the corresponding stretching units 200 based on the determined wafer warpage location, and triggers these stretching units 200 to perform correction operations by sending a first control signal. A detailed description of this step is as follows:

[0102] Based on the wafer warpage locations identified in the second step, the controller 300 matches these locations with stretching units 200 on the placement plane 110. The stretching units 200 are typically distributed across different areas of the wafer, each responsible for a different region. The controller 300 determines the specific stretching unit 200 responsible for that region by comparing the coordinates of the warpage location. For example, if the warpage location is located in the upper right corner of the wafer, the controller 300 will identify the stretching unit 200 in the upper right corner region as the target unit.

[0103] Once the corresponding stretching unit 200 is determined, the controller 300 sends a first control signal to that unit. This control signal contains an instruction requiring the stretching unit 200 to start and move in a first direction (vertical direction) via its drive assembly 240. This movement is used to adjust the adsorption assembly 210 in the stretching unit 200 so that it can precisely contact the warped surface of the wafer.

[0104] Upon receiving a control signal, the drive component 240 (e.g., an electric push rod or cylinder) in the stretching unit 200 actuates, pushing the adsorption component 210 to move along a first direction. During this movement, the adsorption component 210 gradually approaches and eventually contacts the wafer surface, ensuring precise alignment of the adsorption position with the warped area. The amount and speed of movement of the drive component 240 are preset by the controller 300 based on the warped height difference to achieve smooth and precise operation.

[0105] When the adsorption assembly 210 moves to the set position, its vacuum chuck 212 will come into contact with the warped surface of the wafer. At this time, the vacuum chuck 212 generates negative pressure through an internally connected vacuum generator, thereby firmly adsorbing the warped area and preparing for the next correction operation.

[0106] Through the above steps, the system can not only accurately locate the warpage, but also effectively bring the adsorption component 210 into contact with the wafer surface through the corresponding stretching unit 200, laying the foundation for subsequent flattening and correction operations. This process ensures the efficiency and accuracy of wafer flatness correction operations.

[0107] Fourth step, send a second control signal to the stretching unit 200 at the corresponding position. The second control signal is used to trigger the vacuum generator 220 in the stretching unit 200 at the corresponding position so that the adsorption component 210 in the stretching unit 200 at the corresponding position adsorbs the wafer.

[0108] In the fourth step, the system sends a second control signal to the stretching unit 200 at the corresponding position to trigger the vacuum generator 220, enabling the adsorption assembly 210 to effectively adsorb the wafer. The specific details of this step are as follows:

[0109] In the third step, the adsorption assembly 210 has made contact with the warped area of ​​the wafer. After confirming that the contact position is correct, the controller 300 sends a second control signal to the corresponding stretching unit 200. This signal typically includes an activation command for the vacuum generator 220, ensuring that the system can maintain a stable and efficient operating state during the adsorption process.

[0110] Upon receiving the second control signal, the vacuum generator 220 inside the stretching unit 200 will start operating. This device is connected to the adsorption assembly 210 via internal pipes and is responsible for creating a negative pressure environment. The activation of the vacuum generator 220 will cause a decrease in the air pressure inside the adsorption assembly 210, thereby achieving adsorption onto the wafer surface.

[0111] After the vacuum generator 220 generates negative pressure, the vacuum suction cup 212 (e.g., suction section 2121) of the adsorption assembly 210 will quickly adsorb onto the warped area of ​​the wafer. At this time, the elastic section 2122 of the adsorption assembly 210 will adapt to the irregular shape of the wafer surface, ensuring close contact and effectively counteracting pressure changes caused by adjacent uneven positions. This process enhances the stability and reliability of the adsorption.

[0112] During the adsorption process, the controller 300 may monitor the adsorption status through built-in sensors or a feedback system, such as monitoring the vacuum level, adsorption force, and contact conditions. The system can analyze real-time data to adjust the operating status of the vacuum generator 220 in a timely manner, ensuring the smooth progress of the adsorption process.

[0113] Once adsorption is successful, the controller 300 receives a feedback signal indicating the adsorption status, confirming that the adsorption assembly 210 is firmly connected to the wafer surface. At this point, the system will proceed to the next processing or calibration procedure to ensure that the wafer is effectively processed in subsequent steps.

[0114] If insufficient adsorption force or adsorption failure occurs during the adsorption process, the controller 300 can promptly resend the signal or adjust the contact pressure of the adsorption component 210 to ensure the integrity of the wafer and the smooth progress of subsequent processes.

[0115] Through the above process, the system can ensure that the adsorption component 210 in the stretching unit 200 at the corresponding position is effectively adsorbed with the wafer, ensuring that the warped position is firmly grasped, laying a solid foundation for subsequent correction operations.

[0116] Fifth step, send a third control signal to the stretching unit 200 at the corresponding position. The third control signal is used to trigger the drive component 240 in the stretching unit 200 at the corresponding position to pull the warped part of the wafer toward the preset plane.

[0117] In the fifth step, the system sends a third control signal to the stretching unit 200 at the corresponding position to trigger the drive component 240, which pulls the warped portion of the wafer toward a preset plane. A detailed description of this step is as follows:

[0118] In the fourth step, the adsorption component 210 has successfully adsorbed the warped portion of the wafer. At this point, the controller 300 sends a third control signal to the stretching unit 200 at the corresponding position according to a preset correction program. The main function of this signal is to instruct the drive component 240 to start working in order to realize the movement of the warped portion.

[0119] Upon receiving the third control signal, the drive assembly 240 (such as an electric actuator, cylinder, or hydraulic cylinder) within the stretching unit 200 will be activated and perform the corresponding operation. The drive assembly 240 is typically designed to make precise linear movement in a specific direction to ensure that the warped portion moves toward a preset plane.

[0120] The operation of the drive component 240 causes the adsorption component 210 and the attached warped portion of the wafer to be pulled toward a preset plane. This movement includes the following aspects:

[0121] The moving speed of the drive component 240 should be precisely controlled according to the characteristics of the wafer and the requirements of the preset plane to avoid mechanical stress on the wafer due to rapid movement.

[0122] Based on previous test data and warping conditions, the drive component 240 will make corresponding adjustments to ensure that the warped part is pulled to a suitable position and aligned with the preset plane.

[0123] During wafer movement, the controller 300 monitors the operating status of the drive assembly 240 in real time, including information such as position, speed, and load. At this time, the system can use sensors to collect data and adjust the operating parameters of the drive assembly 240 based on the feedback to ensure that the warped part is pulled to the target position.

[0124] During the pulling process, the controller 300 ensures that the connection between the wafer and the adsorption assembly 210 remains stable, preventing adsorption failure or wafer damage due to improper movement. The system may employ safety mechanisms, such as limiting excessive moving forces, to ensure wafer safety.

[0125] After the drive component 240 completes the pulling operation on the warped part, the controller 300 will receive a feedback signal to confirm that the warped part has been successfully moved to the preset plane. This confirmation will prepare for subsequent operations (such as detachment from adsorption, flatness detection, etc.).

[0126] Through the above process, the system can precisely pull the warped parts of the wafer and move them toward a preset plane, thereby effectively correcting the wafer warping problem and providing the necessary flat foundation for subsequent processing steps.

[0127] The sixth step is to obtain the second detection data of the wafer placed on the placement plane 110. The second detection data is the height difference data of the wafer in the first direction obtained by the vision recognition component 400 for detecting the calibrated wafer placed on the placement plane 110.

[0128] In the sixth step, the system acquires second detection data of the wafer placed on the placement plane 110 to evaluate the state of the calibrated wafer. A detailed description of this step is as follows:

[0129] In the fifth step, the warped portion of the wafer has been effectively pulled to the preset plane, completing the initial correction operation. At this point, the system needs to re-inspect the corrected wafer to ensure that its flatness meets the predetermined technical standards.

[0130] The controller 300 will control the vision recognition component 400 to begin operation. This device is typically equipped with a high-resolution camera or other sensors to capture images of the wafer and extract relevant data. The operation of a vision recognition system generally includes the following steps:

[0131] Image Acquisition: The camera will capture images of the wafer placed on the placement plane 110, obtaining images of its surface. To improve image quality, the system may optimize lighting conditions to ensure that details on the wafer surface are clearly visible.

[0132] Image processing: The acquired images will be processed using image processing algorithms to identify and analyze height variations on the wafer. These algorithms may include techniques such as edge detection and contour analysis to accurately measure height differences on the wafer surface.

[0133] Acquiring second detection data: Through image processing, the visual recognition component 400 will extract height difference data about the wafer in the first direction. This data reflects the height variation of the wafer surface at different locations, including:

[0134] By comparing the height difference between the corrected wafer and the preset plane, the system can evaluate the correction effect and determine whether the warpage has been effectively corrected.

[0135] The second set of test data will be recorded in numerical form, including the height values ​​of each measurement point and the corresponding height differences, forming a complete test report.

[0136] The acquired second detection data will be stored in the controller 300 in real time for subsequent analysis and decision-making. The system may compare it with the first detection data to analyze the changes before and after correction.

[0137] The system will evaluate the correction effect based on the results of the second detection. If the detection results show that the wafer surface flatness meets the predetermined requirements, the system will prepare for subsequent processing or delivery.

[0138] After acquiring the second set of test data, the controller 300 will update the wafer status information to ensure that subsequent operations such as handling, processing, or quality inspection can be performed based on the latest wafer status.

[0139] Through the above process, the system can effectively acquire the second inspection data of the calibrated wafer, providing data support to ensure the flatness and quality of the wafer, and further enhancing the accuracy and reliability of the entire processing flow.

[0140] Step 7: If the second detection data is not within the preset range, the warpage position of the wafer on the placement plane 110 is determined again based on the second detection data, and the first control signal, the second control signal, and the third control signal are sent again to the stretching unit 200 at the corresponding position so that the stretching unit 200 at the corresponding position repeats the correction action until the second detection data is within the preset range; if the second detection data is within the preset range, a fourth control signal is sent to the stretching unit 200 at the corresponding position, and the fourth control signal is used to stop the stretching unit 200 at the corresponding position from running.

[0141] In step seven, the system further corrects the flatness of the wafer to ensure it meets the preset quality standards. This step is detailed below:

[0142] The system first analyzes the acquired second detection data to determine whether it falls within a preset reasonable range. This preset range is typically determined by the wafer processing standards; for example, the allowable height difference should be controlled within a certain micrometer range.

[0143] Specific judgment conditions:

[0144] If the second detection data is not within the preset range.

[0145] The system will issue a command to redetermine the warpage location of the wafer. This means that the wafer height needs to be checked again using the vision recognition component 400 to obtain a more accurate warpage location.

[0146] Once the new warp location is determined, the system will again send a first control signal, a second control signal, and a third control signal to the stretching unit 200 at the corresponding location. The functions of these three signals are as follows:

[0147] First control signal: used to trigger the drive component 240 of the stretching unit 200 to position it at the newly determined warping position.

[0148] Second control signal: Activate vacuum generator 220 in stretching unit 200 to ensure that adsorption component 210 can effectively contact wafer surface for adsorption.

[0149] Third control signal: Drive component 240 starts working, pulling the warped part towards the preset plane to perform a correction operation.

[0150] This process may be repeated until the second test data is corrected to within the preset range. This cyclical correction process ensures that the required flatness is achieved under any circumstances.

[0151] If the second detection data is within the preset range:

[0152] Once it is confirmed that the second test data meets the preset standard, the system will send a fourth control signal to the tension unit 200 at the corresponding position. The function of this signal is to instruct the tension unit 200 to stop running and end the current calibration process.

[0153] During this process, the controller 300 will record the calibration results and may update the system status in preparation for subsequent processing or inspection operations.

[0154] After calibration is completed, the system will generate a calibration report, recording the results of each test and calibration, to facilitate subsequent data analysis and quality management.

[0155] In addition, if necessary, the system can also be configured with a monitoring mechanism to track changes in the wafer's status in real time, ensuring that quality standards are continuously met during the production process.

[0156] Through the above steps, the system can ensure that the wafer maintains a high standard of flatness at each processing stage, thereby improving product quality and reliability and reducing potential defects and losses.

[0157] After sending a second control signal to the stretching unit 200 at the corresponding position, the second control signal is used to trigger the vacuum generator 220 in the stretching unit 200 at the corresponding position so that the adsorption component 210 in the stretching unit 200 at the corresponding position adsorbs the wafer, in order to avoid the easily damaged areas (circuit areas) on the wafer surface being damaged by the suction force of the high vacuum chuck 212, or too many low vacuum surfaces failing to form sufficient adsorption force on the wafer as a whole, the adsorption component 210 also includes a vacuum detector 213. The vacuum detector 213 is connected to the load element to detect the vacuum degree at the adsorption area when the vacuum chuck 212 adsorbs the wafer. The vacuum detector 213 is connected to the controller 300. The control method, such as Figure 8 As shown, it also includes:

[0158] Step 8: Obtain first vacuum detection data and second vacuum detection data. The first vacuum detection data is the vacuum level data obtained by the vacuum detector 213 detecting the adsorption space at the corresponding position. The second vacuum detection data is the vacuum level data obtained by the vacuum detector 213 detecting the adsorption space at the corresponding position after a preset time.

[0159] In step eight, the system monitors the vacuum adsorption process to ensure that the wafer is not damaged during adsorption, especially protecting vulnerable areas such as circuit regions. A detailed description of this step is as follows:

[0160] Acquiring the first vacuum detection data: After the second control signal is sent, the vacuum chuck 212 begins to contact the surface of the wafer. At this instant, the vacuum detector 213 starts working, monitoring the vacuum level in the adsorption area in real time.

[0161] This vacuum level data is referred to as the first vacuum detection data. It reflects the instantaneous vacuum state within the adsorption space, ensuring that the adsorption assembly 210 can effectively adsorb the wafer.

[0162] Acquiring the second vacuum detection data: After acquiring the first vacuum detection data, the system will set a preset time period. The length of this time period can be adjusted according to specific operational needs to facilitate observation of the stability of the vacuum state.

[0163] After the preset time has elapsed, the vacuum detector 213 re-detects the adsorption space at the corresponding location to obtain second vacuum detection data. This data is used to compare the changes in vacuum level during the adsorption process to assess whether the adsorption effect is ideal.

[0164] Analysis of vacuum level data: This data is used to observe changes in vacuum level over a period of time. If the vacuum level remains within the expected range, it indicates that the adsorption process is effective and stable; otherwise, further adjustments may be necessary.

[0165] Vacuum detector 213 is connected to controller 300 to ensure that real-time data can be transmitted to the control system. Controller 300 will make a judgment based on the acquired first and second vacuum detection data to determine the next operation strategy.

[0166] If the vacuum level is found to be substandard, the controller 300 can issue an adjustment command to change the working state of the adsorption component 210.

[0167] By implementing step eight, the system can accurately monitor changes in the vacuum state during the adsorption process, ensuring that the wafer, especially sensitive areas, is not affected by excessive suction during adsorption, thereby protecting the overall integrity and functional performance of the wafer.

[0168] Step 9: Determine whether the difference between the first vacuum detection data and the second vacuum detection data exceeds a preset value.

[0169] In the ninth step, the system compares the first vacuum detection data and the second vacuum detection data to determine the effectiveness and stability of the adsorption process. A detailed description of this step is as follows:

[0170] First, the controller 300 compares the first vacuum detection data and the second vacuum detection data.

[0171] The difference is calculated as: Second vacuum detection data - First vacuum detection data. This difference reflects the change in vacuum level during the adsorption process.

[0172] During the system design phase, engineers set a reasonable preset value based on factors such as the wafer's material properties, adsorption environment, and operational requirements. This preset value is used to measure whether the vacuum level variation is within an acceptable range.

[0173] The controller 300 compares the calculated difference with a preset value:

[0174] If the difference exceeds the preset value, it means that the vacuum level changes too much during the adsorption process, which may lead to unstable adsorption or uneven suction affecting the wafer. In this case, the system will enter the corresponding processing procedure to prevent potential damage.

[0175] If the difference does not exceed the preset value, it indicates that the adsorption process is stable and the adsorption effect is good. At this time, the system can continue to perform subsequent steps to ensure that the wafer remains safe and stable in the next operation.

[0176] Furthermore, regardless of whether the difference exceeds the limit or not, the controller 300 should record the first vacuum detection data, the second vacuum detection data, and their difference. This data can be used for subsequent analysis and optimization to improve the performance and reliability of the entire system.

[0177] By implementing step nine, the system can effectively monitor and control the vacuum state during the adsorption process, ensuring the safety and integrity of the wafer and preventing damage caused by improper adsorption. This process helps improve production efficiency and product quality.

[0178] Step 10: If the difference between the first vacuum detection data and the second vacuum detection data exceeds a preset range, the area on the wafer covered by the adsorption component 210 in the stretching unit 200 at the corresponding position is a vulnerable area. A fifth control signal is sent to the stretching unit 200 corresponding to the vulnerable area. The fifth control signal is used to trigger the vacuum generator 220 in the stretching unit 200 corresponding to the vulnerable area, so as to reduce the vacuum level in the adsorption space corresponding to the vulnerable area. If the difference between the first vacuum detection data and the second vacuum detection data is lower than or within the preset range, the area on the wafer covered by the adsorption component 210 in the stretching unit 200 at the corresponding position is an adsorbable area, and the vacuum level in the adsorption space corresponding to the adsorbable area remains unchanged.

[0179] In step ten, the system determines the vulnerability of different areas on the wafer surface based on the difference between the first and second vacuum detection data, and takes corresponding measures to protect the wafer. This step is detailed below:

[0180] The controller 300 first checks whether the difference between the first vacuum detection data and the second vacuum detection data exceeds a preset range. Determining this difference helps identify whether there are risk areas on the wafer surface.

[0181] The preset range is set by the system designer based on material properties, operating conditions and experience data to ensure the safety of the wafer during the adsorption process.

[0182] If the difference exceeds a preset range, the system determines that the area on the wafer covered by the adsorption component 210 in the stretching unit 200 at the corresponding position is a vulnerable area. The controller 300 sends a fifth control signal to the stretching unit 200 corresponding to the vulnerable area. This signal is used to activate the vacuum generator 220 in the stretching unit 200 corresponding to the vulnerable area, reducing the vacuum level in that area. Reducing the vacuum level can reduce the adsorption force on the wafer, thereby reducing the risk of damage to the vulnerable area. Specific operations may include reducing the adsorption force or momentarily releasing part of the vacuum to reduce the stress on the wafer surface. Alternatively, the vulnerable area of ​​the wafer can be protected by switching between the high-pressure suction cup group and the low-pressure suction cup group in the aforementioned stretching unit 200. That is, when the difference exceeds the preset range, the vacuum generator 220 corresponding to the high-pressure suction cup group stops operating, and the low-pressure suction cup group in the stretching unit 200 adsorbs the wafer.

[0183] If the difference is below or within a preset range, the controller 300 will identify the area on the wafer covered by the adsorption component 210 in the stretching unit 200 at the corresponding position as an adsorption-capable area. The controller 300 maintains the vacuum level in the adsorption space corresponding to this adsorption-capable area unchanged. This means that the system will continue to use the current adsorption settings to ensure that the adsorption force is strong enough to effectively fix the wafer and prevent it from moving or shifting in subsequent operations.

[0184] Based on the monitoring of the first and second vacuum detection data, the controller 300 will monitor the status of the wafer in real time and adjust the adsorption strategy according to the actual situation.

[0185] If the system discovers a new vulnerable area during the judgment process, it will repeat the above process to ensure that the wafer is always safe.

[0186] In this step, the system should record data related to vulnerable and adsorption-prone areas, including control signals issued, vacuum level changes, and corresponding area information. This data will be used for subsequent analysis and improvement, helping to optimize the adsorption process and improve wafer production quality and safety.

[0187] By implementing the above steps, the system can intelligently identify the characteristics of different areas on the wafer surface and adopt appropriate adsorption strategies, thereby effectively protecting the wafer, reducing the risk of damage, and improving production efficiency.

[0188] The above description is merely illustrative of the invention. Those skilled in the art can make various modifications or additions to the described specific embodiments or use similar methods to replace them, as long as they do not depart from the content of this specification or exceed the scope defined by the claims, all of which should fall within the protection scope of this invention.

Claims

1. A control method for a wafer calibration device, characterized in that: The wafer correction device includes: The base includes a material placement plane for placing wafers. The base has a first accommodating space on the side of the material placement plane. The extending direction of the first accommodating space is defined as a first direction, which is perpendicular to the material placement plane. A stretching unit, disposed within the first accommodating space, includes: An adsorption assembly, which is controllably movable in the first direction, comprises: The load-bearing component is located at the first movable end of the first telescopic component; A vacuum suction cup is disposed on the side of the load member opposite to the first telescopic member. The vacuum suction cup is connected to the first connecting part, thereby enabling the vacuum suction cup to communicate with a vacuum generator. A vacuum generator, which is connected to the adsorption assembly; a controller, which is connected to the vacuum generator; Furthermore, each stretching unit includes at least two adsorption components. Each vacuum suction cup in the stretching unit is connected to a vacuum generator in the stretching unit. A switching valve is provided between the vacuum suction cup and the vacuum generator to realize the switching between different vacuum suction cups in the adsorption components. The vacuum suction cups in the stretching unit are divided into a high-pressure suction cup group and a low-pressure suction cup group. The controller is configured to control the low-pressure suction cup group to adsorb the vulnerable areas of the wafer and control the high-pressure suction cup group to adsorb the adsorbable areas of the wafer. The adsorption assembly also includes a vacuum detector, which is connected to the controller and is used to detect the vacuum level in the adsorption area during the adsorption process. When the wafer correction device is in operation, the adsorption component adsorbs onto the wafer surface placed on the material placement plane, and the adsorption component moves in a controlled manner along the first direction so that the part of the wafer adsorbed by the adsorption component deforms in the first direction. The wafer correction device further includes a vision recognition component, which is connected to the controller. The base has a plurality of first accommodating spaces on the material placement plane side, and each first accommodating space is provided with the stretching unit. The control method includes: First detection data of a wafer placed on the placement plane is obtained. The first detection data is the height difference data of the wafer in the first direction obtained by the vision recognition component for detecting the wafer placed on the placement plane. The warpage position of the wafer placed on the material placement plane is determined based on the first detection data; The stretching unit corresponding to the warpage position of the wafer placed on the material placement plane is determined; A first control signal is sent to the stretching unit at the corresponding position. The first control signal is used to trigger the driving component in the stretching unit at the corresponding position to drive the stretching unit to move in the first direction, so that the adsorption component in the stretching unit at the corresponding position contacts the wafer surface. A second control signal is sent to the stretching unit at the corresponding position. The second control signal is used to trigger the vacuum generator in the stretching unit at the corresponding position so that the adsorption component in the stretching unit at the corresponding position adsorbs the wafer. A third control signal is sent to the stretching unit at the corresponding position. The third control signal is used to trigger the drive component in the stretching unit at the corresponding position to pull or push the warped part of the wafer toward a preset plane. Acquire second detection data of the wafer placed on the placement plane. The second detection data is the height difference data of the wafer in the first direction obtained by the vision recognition component for detecting the calibrated wafer placed on the placement plane. If the second detection data is not within the preset range, the warpage position of the wafer on the placement plane is determined again based on the second detection data, and the first control signal, the second control signal and the third control signal are sent again to the stretching unit at the corresponding position so that the stretching unit at the corresponding position repeats the correction action until the second detection data is within the preset range. If the second detection data is within the preset range, a fourth control signal is sent to the stretching unit at the corresponding position. The fourth control signal is used to stop the stretching unit at the corresponding position from running. The process further includes the following steps after sending a second control signal to the stretching unit at the corresponding position, the second control signal being used to trigger the vacuum generator in the stretching unit at the corresponding position so that the adsorption component in the stretching unit at the corresponding position adsorbs the wafer: Acquire first vacuum detection data and second vacuum detection data. The first vacuum detection data is the vacuum level data obtained by the vacuum detector detecting the adsorption component and the wafer adsorption site at the corresponding position. The second vacuum detection data is the vacuum level data obtained by the vacuum detector detecting the adsorption component and the wafer adsorption site at the corresponding position after a preset time. Determine whether the difference between the first vacuum detection data and the second vacuum detection data exceeds a preset value; If the difference between the first vacuum detection data and the second vacuum detection data exceeds a preset range, the area on the wafer covered by the adsorption component in the stretching unit at the corresponding position is a vulnerable area. A fifth control signal is sent to the stretching unit corresponding to the vulnerable area. The fifth control signal is used to trigger the low-pressure suction cup group in the stretching unit corresponding to the vulnerable area to adsorb onto the wafer, so as to reduce the vacuum level in the adsorption space corresponding to the vulnerable area. If the difference between the first vacuum detection data and the second vacuum detection data is lower than or within a preset range, the area on the wafer covered by the high-pressure suction cup group in the stretching unit at the corresponding position is an adsorption area, maintaining a high-pressure adsorption state.

2. The control method for a wafer correction device according to claim 1, characterized in that, The stretching unit includes: A driving component is disposed within the first accommodating space, the driving component is connected to the adsorption component to move the adsorption component along the first direction, and the driving component is connected to the controller.

3. The control method for a wafer correction device according to claim 2, characterized in that, The driving component includes: A first telescopic member is disposed within the first accommodating space. The first telescopic member includes a first movable end, which moves in a controlled manner. The direction of movement of the first movable end is configured to be parallel to the first direction. The first movable end is connected to the adsorption component.

4. The control method for a wafer correction device according to claim 3, characterized in that, The stretching unit includes: A telescopic assembly, wherein the vacuum generator is connected to the adsorption assembly via the telescopic assembly, and the three are internally interconnected; the telescopic assembly includes: A first connecting part, one end of which is connected to the adsorption component, and the two are internally connected; A telescopic portion, one end of which is connected to the other end of the first connecting portion, the two being internally connected, and the telescopic direction of the telescopic portion is configured to be along the first direction; and The second connecting part has one end connected to the other end of the telescopic part, and the other end connected to the vacuum generator, with the two parts internally connected.

5. The control method for a wafer calibration device according to claim 4, characterized in that, The driving component includes: The second telescopic member is disposed within the first accommodating space, and the second telescopic member includes a mounting part and a second movable end. The second movable end is connected to the mounting part in a controlled movement manner, and the movement direction of the second movable end is configured to be parallel to the first direction. The mounting part is fixedly connected to the base, and the second movable end is connected to the second connecting part so that the second connecting part moves with the second movable end.

6. A control method for a wafer calibration apparatus according to any one of claims 4 to 5, characterized in that, The adsorption component includes: A load-bearing component is disposed at the first movable end of the first telescopic component; A vacuum suction cup is disposed on the side of the load member away from the first telescopic member. The vacuum suction cup is connected to the first connecting part, so that the vacuum suction cup is connected to the vacuum generator.

7. The control method for a wafer correction device according to claim 6, characterized in that, Each stretching unit includes at least two adsorption components, and each stretching unit also includes a driving component and a telescopic component that are configured one-to-one with each adsorption component.

8. The control method for a wafer calibration device according to claim 7, characterized in that, The vacuum suction cup includes: The suction section is adsorbed onto the wafer surface when the wafer calibration device is in operation. An elastic segment is connected to and communicates with the suction section, and the elastic segment is configured to undergo elastic deformation. The connecting end is connected to and communicates with the end of the elastic segment that is away from the suction part.

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