A GaN-based compound semiconductor laser element

Abstract

This invention relates to the field of semiconductor optoelectronic device technology, specifically disclosing a GaN-based compound semiconductor laser element. The GaN-based compound semiconductor laser element, from bottom to top, comprises a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. An exciton-phonon quantum interference layer is located between the upper waveguide layer and the upper confinement layer. The lattice constant distribution of the exciton-phonon quantum interference layer follows a function y = A + B * lnx + x. The bandgap distribution of the exciton-phonon quantum interference layer follows a function y = C + D * sinx / x. 2 The third quadrant curve distribution; this GaN-based compound semiconductor laser element can solve the abrupt problems of conductance jump, capacitance sink and ideal factor jump at the threshold, reduce electron-hole transmission loss, improve carrier injection uniformity and gain uniformity, increase laser optical power, and improve beam quality factor.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of semiconductor photoelectric devices, and particularly relates to a GaN-based compound semiconductor laser element. BACKGROUND

[0002] Lasers are widely used in laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precision welding, high-density optical storage and other fields. There are many classifications of lasers, and the classification methods are various. The main types of lasers include solid-state, gas, liquid, semiconductor and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long service life, simple and compact structure, and miniaturization. There are great differences between lasers and nitride semiconductor light-emitting diodes. 1) Laser is generated by stimulated radiation of carriers, and the spectral half-width is small, the brightness is very high, and the output power of a single laser can reach W level, while the nitride semiconductor light-emitting diode is self-radiation, and the output power of a single light-emitting diode is in mW level; 2) The current density of the laser reaches KA / cm 2 , which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, thereby causing stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency droop effect; 3) The light-emitting diode is self-transition radiation without external action, and the incoherent light jumps from a high energy level to a low energy level, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the energy level difference of the electron transition, and the coherent light of the generated photon and the induced photon is the same; 4) Different principles: the light-emitting diode is under the action of external voltage, and the electron-hole jumps to the quantum well or p-n junction to produce radiation recombination and light emission, while the laser needs to meet the lasing conditions, and the carrier inversion distribution in the active region must be met. The stimulated radiation light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light, and the gain is greater than the loss to finally output laser.

[0003] The nitride semiconductor laser has the following problems:

[0004] 1) High optical waveguide absorption loss, intrinsic carbon impurities in the p-type semiconductor will compensate the acceptor and destroy the p-type, the ionization rate of p-type doping is low, and a large number of un-ionized Mg acceptor impurities will cause the internal optical loss to rise, and the refractive index dispersion of the laser, the fluctuation of high-concentration carrier concentration affects the refractive index of the active layer, the limiting factor decreases with the increase of wavelength, resulting in the decrease of the mode gain of the laser;

[0005] 2) Laser light wave form can be divided into transverse mode and longitudinal; The transverse mode light intensity distribution in the section perpendicular to the optical axis is determined by the waveguide structure of the semiconductor laser, if the transverse mode is complex and unstable, the coherence of the output light is poor; The longitudinal mode is a standing wave distribution in the propagation direction of the resonant cavity, many longitudinal modes are simultaneously excited or there is mode change, then high temporal coherence cannot be obtained;

[0006] 3) The Mg acceptor activation energy of p-type semiconductor is large, the ionization efficiency is low, the hole concentration is far lower than the electron concentration, the hole mobility is far less than the electron mobility, and the quantum well polarization electric field enhances the hole injection barrier, the hole overflow active layer and other problems, the hole injection is uneven and the efficiency is low, which leads to the serious asymmetry and mismatch of the electron and hole in the quantum well, the electron leakage and the carrier delocalization, the hole transport in the quantum well is more difficult, the carrier injection is uneven, the gain is uneven, at the same time, the laser gain spectrum is wide, the peak gain decreases, which leads to the increase of the threshold current of the laser and the decrease of the slope efficiency, the band gap difference of the laser increases, the hole transport in the quantum well is more difficult, the carrier injection is uneven, and the gain is uneven. SUMMARY

[0007] The purpose of the present application is to provide a GaN-based compound semiconductor laser element with simple structure and reasonable design to solve the above problems.

[0008] The present application realizes the above-mentioned purpose by the following technical solutions:

[0009] A GaN-based compound semiconductor laser element sequentially comprises a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper confinement layer from bottom to top, and an exciton-phonon quantum interference layer is arranged between the upper waveguide layer and the upper confinement layer; The lattice constant distribution of the exciton-phonon quantum interference layer has a function y=A+B*l nx+x curve distribution, A and B are arbitrary values; The band gap width distribution of the exciton-phonon quantum interference layer has a function y=C+D*s i nx / x 2 third quadrant curve distribution, C and D are arbitrary values; The lattice constant of the upper confinement layer is less than or equal to the lattice constant of the exciton-phonon quantum interference layer, which is less than or equal to the lattice constant of the upper waveguide layer; The band gap width of the upper waveguide layer is less than or equal to the band gap width of the exciton-phonon quantum interference layer, which is less than or equal to the band gap width of the upper confinement layer.

[0010] Further, the thermal conductivity distribution of the exciton-phonon quantum interference layer has a function y=E+F*x a curve distribution, wherein a<0, E and F are arbitrary values; The thermal conductivity of the upper waveguide layer is less than or equal to the thermal conductivity of the exciton-phonon quantum interference layer, which is less than or equal to the thermal conductivity of the upper confinement layer.

[0011] Further, the thermal expansion coefficient distribution of the exciton-phonon quantum interference layer has a function y=G+H*b xThe curve distribution is given, where b < 1, and G and H are arbitrary values; the thermal expansion coefficient of the upper waveguide layer ≤ the thermal expansion coefficient of the exciton-phonon quantum interference layer ≤ the thermal expansion coefficient of the upper confinement layer.

[0012] Furthermore, the In / C element ratio of the exciton-phonon quantum interference layer has a curve distribution of the function y = J + K * lnx + x, where J and K are arbitrary values; the In / C element ratio of the upper confinement layer ≤ the In / C element ratio of the exciton-phonon quantum interference layer ≤ the In / C element ratio of the upper waveguide layer.

[0013] Furthermore, the In / H element ratio of the exciton-phonon quantum interference layer has a first four-quadrant curve distribution of the function y = L + x - 1 / 2x, where L is an arbitrary value; the In / H element ratio of the upper confinement layer ≤ the In / H element ratio of the exciton-phonon quantum interference layer ≤ the In / H element ratio of the upper waveguide layer.

[0014] Furthermore, the In / O element ratio of the exciton-phonon quantum interference layer has a function y = M + N*log. c The curve distribution of x, where c < 1, M and N are arbitrary values; the ratio of In / O elements in the upper confinement layer ≤ the ratio of In / O elements in the exciton-phonon quantum interference layer ≤ the ratio of In / O elements in the upper waveguide layer.

[0015] Furthermore, the lattice constant distribution, band gap distribution, thermal conductivity distribution, and thermal expansion coefficient distribution of the exciton-phonon quantum interference layer have the following relationship: A≤E≤G≤C; the In / H element ratio, In / O element ratio, and In / C element ratio of the exciton-phonon quantum interference layer have the following relationship: L≤J≤M; the exciton-phonon quantum interference layer is any one or any combination of GaN, InGaN, InN, Al InN, Al GaN, Al InGaN, Al InGaN, Al N, GaAs, GaP, InP, Al GaAs, Al InGaAs, Al Ga InP, InGaAsN, Al InAs, Al InP, Al GaP, InGaP, GaSb, InSb, InAs, InAsSb, Al GaSb, Al Sb, InGaSb, Al GaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0016] Furthermore, the active layer is a periodic structure composed of a well layer and a barrier layer, with a period number of 3 ≥ m ≥ 1;

[0017] The well layer is any one or any combination of any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, with a thickness of 10-80 angstroms;

[0018] The barrier layer is any one or any combination of any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, with a thickness of 10-120 angstroms.

[0019] Further, the lower confinement layer, the lower waveguide layer, the upper waveguide layer, and the upper confinement layer are any one or any combination of any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN.

[0020] Further, the substrate comprises any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0021] The application has the advantages that: the application generates quantum interference between the Brillouin zone boundary acoustic phonon and the dark exciton by modulating the corresponding symmetry breaking away from the equilibrium state through the exciton-phonon quantum interference layer, reduces the Coulomb screening strength, generates the strong coupling effect of the dark exciton and the acoustic phonon, and solves the mutation problems of the conductance up-jump, the capacitance down-sink and the ideal factor up-jump at the threshold; the exciton-phonon quantum interference layer generates the surface plasmon-induced electric field enhancement interface charge transfer, reduces the transmission loss of the electron hole, strengthens the electron and hole transmission and injection into the active layer, improves the carrier injection uniformity and gain uniformity, improves the optical power of the laser, and generates the exciton polariton, so that the strong coupling effect of the exciton and the waveguide layer photon of the laser element is greater than the dissipation rate, the photon mode of the laser is limited, the high-purity laser longitudinal wave field is formed, the laser coherence and single-mode output are improved, and the beam quality factor is improved. BRIEF DESCRIPTION OF DRAWINGS

[0022] Fig. 1 is a structure schematic diagram of a GaN-based compound semiconductor laser element of an embodiment of the application;

[0023] Fig. 2 is a SIMS secondary ion mass spectrum of a GaN-based compound semiconductor laser element of an embodiment of the application.

[0024] In the figure: 100, substrate; 101, lower confinement layer; 102, lower waveguide layer; 103, active layer; 104, upper waveguide layer; 105, upper confinement layer; 106, exciton-phonon quantum interference layer. DETAILED DESCRIPTION

[0025] It is necessary to point out here that the following detailed description is only used to further illustrate the application, and cannot be understood as limiting the protection scope of the application, and the skilled in the art can make some non-essential improvements and adjustments to the application according to the above application content.

[0026] As Figs. 1-2As shown, a GaN-based compound semiconductor laser device includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105, with an exciton-phonon quantum interference layer 106 between the upper waveguide layer 104 and the upper confinement layer 105.

[0027] The exciton-phonon quantum interference layer 106 is a special structure in semiconductor materials, in which the interaction between excitons (electron-pore pairs) and phonons (lattice vibration quanta) can produce a quantum interference effect. This interference effect can affect the optical and electronic properties of the material, improve the performance of optoelectronic devices, such as enhancing the gain of lasers or adjusting the light transmission characteristics.

[0028] The lattice constant distribution of the exciton-phonon quantum interference layer 106 has a function y = A + B * lnx + x curve distribution, where A and B are arbitrary values;

[0029] The lattice constant, also known as the lattice parameter, is a key quantity that describes the geometric arrangement of atoms, ions, or molecules in a crystal lattice.

[0030] The bandgap distribution of the exciton-phonon quantum interference layer 106 has the function y = C + D*si nx / x 2 The curve distribution is in the third quadrant, where C and D are arbitrary values;

[0031] The lattice constant of the upper confinement layer 105 is less than or equal to the lattice constant of the exciton-phonon quantum interference layer 106 and the lattice constant of the upper waveguide layer 104; the band gap of the upper waveguide layer 104 is less than or equal to the band gap of the exciton-phonon quantum interference layer 106 and the band gap of the upper confinement layer 105.

[0032] The bandgap is the energy difference between the conduction band and the valence band in a semiconductor or insulator. It represents the minimum energy required for an electron to transition from the valence band to the conduction band. The larger the bandgap, the lower the conductivity of the material, and vice versa.

[0033] In a specific embodiment, the thermal conductivity distribution of the exciton-phonon quantum interference layer 106 has the following characteristics: the lattice constant of the upper confinement layer 105 ≤ the lattice constant of the exciton-phonon quantum interference layer 106 ≤ the lattice constant of the upper waveguide layer 104; and the bandgap of the upper waveguide layer 104 ≤ the bandgap of the exciton-phonon quantum interference layer 106 ≤ the bandgap of the upper confinement layer 105.

[0034] Thermal conductivity is a material’s ability to conduct heat, and it usually depends on a variety of factors, including temperature, material structure, and lattice defects. The distribution of thermal conductivity can vary greatly under different materials and conditions.

[0035] In a specific implementation, the thermal expansion coefficient distribution of the exciton-phonon quantum interference layer 106 follows the function y = G + H*b. x The curve distribution of the curve, where b < 1, G and H are arbitrary values; the thermal expansion coefficient of the upper waveguide layer 104 ≤ the thermal expansion coefficient of the exciton phonon quantum interference layer 106 ≤ the thermal expansion coefficient of the upper confinement layer 105;

[0036] The coefficient of thermal expansion describes the degree of change in volume or length of a material when the temperature changes. It is a quantitative indicator of thermal expansion.

[0037] In a specific implementation, the In / C element ratio of the exciton-phonon quantum interference layer 106 has a curve distribution of the function y = J + K * lnx + x, where J and K are arbitrary values; the In / C element ratio of the upper confinement layer 105 ≤ the In / C element ratio of the exciton-phonon quantum interference layer 106 ≤ the In / C element ratio of the upper waveguide layer 104.

[0038] In a specific implementation, the In / H element ratio of the exciton-phonon quantum interference layer 106 has a first four-quadrant curve distribution of the function y = L + x - 1 / 2x, where L is an arbitrary value; the In / H element ratio of the upper confinement layer 105 ≤ the In / H element ratio of the exciton-phonon quantum interference layer 106 ≤ the In / H element ratio of the upper waveguide layer 104.

[0039] In a specific implementation, the In / O element ratio of the exciton-phonon quantum interference layer 106 has a function y = M + N * log c The curve distribution of x, where c < 1, M and N are arbitrary values; the ratio of In / O elements in the upper confinement layer 105 ≤ the ratio of In / O elements in the exciton-phonon quantum interference layer 106 ≤ the ratio of In / O elements in the upper waveguide layer 104.

[0040] The lattice constant distribution, band gap distribution, thermal conductivity distribution, and thermal expansion coefficient distribution of the exciton-phonon quantum interference layer 106 have the following relationship: A≤E≤G≤C; the In / H element ratio, In / O element ratio, and In / C element ratio of the exciton-phonon quantum interference layer 106 have the following relationship: L≤J≤M.

[0041] In a specific embodiment, the exciton-phonon quantum interference layer 106 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0042] In a specific implementation, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, with a period number of 3≥m≥1;

[0043] The well layer is any one or any combination of GaN, InGaN, InN, Al InN, Al GaN, Al InGaN, Al N, GaAs, GaP, InP, AlGaAs, Al InGaAs, Al GaInP, InGaAs, InGaAsN, Al InAs, Al InP, Al GaP, InGaP, GaSb, InSb, InAs, InAsSb, Al GaSb, Al Sb, InGaSb, Al GaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10–80 angstroms.

[0044] The barrier layer is any one or any combination of GaN, InGaN, InN, Al InN, Al GaN, Al InGaN, Al N, GaAs, GaP, InP, AlGaAs, Al InGaAs, Al GaInP, InGaAs, InGaAsN, Al InAs, Al InP, Al GaP, InGaP, GaSb, InSb, InAs, InAsSb, Al GaSb, Al Sb, InGaSb, Al GaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10–120 angstroms.

[0045] In a specific embodiment, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, Al InN, Al GaN, Al InGaN, Al InGaN, Al N, GaAs, GaP, InP, Al GaAs, Al InGaAs, AlGaInP, InGaAs, InGaAsN, Al InAs, Al InP, Al GaP, InGaP, GaSb, InSb, InAs, InAsSb, Al GaSb, Al Sb, InGaSb, Al GaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0046] In a specific embodiment, the substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0047] To highlight the technical advantages of this solution, this embodiment compares the performance of the laser element proposed in this invention with that of traditional laser elements. The comparison results are shown in Table 1.

[0048] Table 1

[0049]

[0050] As can be seen from the data in Table 1, the GaN-based compound semiconductor laser element proposed in this invention has a beam quality factor of 3.7M compared to traditional lasers. 2 Reduced to 1.6M 2 The change was 131%. The beam quality factor is typically used to describe the spatial structure and focusing performance of a laser beam. A value closer to 1 indicates higher beam quality, meaning the beam is closer to an ideal Gaussian beam. Therefore, from 3.7M... 2 Reduced to 1.6M 2 This means that the quality of the light beam has been improved, providing greater flexibility and possibilities for the design of optical devices;

[0051] The optical power increased from 4.1W to 6.7W, a change of 63%. The increase in optical power indicates that the output energy of the laser has increased, resulting in a stronger beam, a longer transmission distance, or higher processing efficiency.

[0052] The focused beam resolution has been improved from greater than 250nm to less than 20nm, thereby enhancing the detail of images and data, making them suitable for more precise applications; the beam focusing capability has been enhanced, which helps to perform more accurate processing and measurement; and the imaging quality has been improved, making the detection and analysis of microstructures more effective.

[0053] The embodiments described above are merely examples of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements all fall within the scope of protection of the present invention.

Claims

1. A GaN-based compound semiconductor laser element comprising, in order from the bottom, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, characterized in that, The upper waveguide layer and the upper confinement layer have an exciton-phonon quantum interference layer; a lattice constant distribution of the exciton-phonon quantum interference layer has a function y=A+B*lnx+x curve distribution, A and B are arbitrary values; a band gap width distribution of the exciton-phonon quantum interference layer has a function y=C+D*sinx / x 2 The third quadrant curve distribution, C and D are arbitrary values; the lattice constant of the upper confinement layer is less than or equal to the lattice constant of the exciton-phonon quantum interference layer, which is less than or equal to the lattice constant of the upper waveguide layer; the band gap width of the upper waveguide layer is less than or equal to the band gap width of the exciton-phonon quantum interference layer, which is less than or equal to the band gap width of the upper confinement layer.

2. A GaN-based compound semiconductor laser device according to claim 1, wherein The thermal conductivity distribution of the exciton-phonon quantum interference layer has a function y = E + F*x a The curve distribution is given by a < 0, where E and F are arbitrary values; the thermal conductivity of the upper waveguide layer ≤ the thermal conductivity of the exciton-phonon quantum interference layer ≤ the thermal conductivity of the upper confinement layer.

3. A GaN-based compound semiconductor laser device according to claim 2, wherein The thermal expansion coefficient distribution of the exciton-phonon quantum interference layer has a function y = G + H*b x The curve distribution is given, where b < 1, and G and H are arbitrary values; the thermal expansion coefficient of the upper waveguide layer ≤ the thermal expansion coefficient of the exciton-phonon quantum interference layer ≤ the thermal expansion coefficient of the upper confinement layer.

4. A GaN-based compound semiconductor laser device according to claim 3, wherein The In / C element ratio of the exciton-phonon quantum interference layer has a curve distribution of function y=J+K*lnx+x, J and K are arbitrary values; the In / C element ratio of the upper confining layer ≤ the In / C element ratio of the exciton-phonon quantum interference layer ≤ the In / C element ratio of the upper waveguide layer.

5. A GaN-based compound semiconductor laser device according to claim 4, wherein The In / H element ratio of the exciton-phonon quantum interference layer has a first four-quadrant curve distribution of function y=L+x-1 / 2x, L is an arbitrary value; the In / H element ratio of the upper confining layer ≤ the In / H element ratio of the exciton-phonon quantum interference layer ≤ the In / H element ratio of the upper waveguide layer.

6. A GaN-based compound semiconductor laser device according to claim 5, wherein The In / O element ratio of the exciton-phonon quantum interference layer has a curve distribution of function y=M+N*log c x, wherein c<1, M and N are any numerical value; the In / O element ratio of the upper limiting layer ≤ the In / O element ratio of the exciton-phonon quantum interference layer ≤ the In / O element ratio of the upper waveguide layer.

7. A GaN-based compound semiconductor laser device according to claim 6, wherein The lattice constant distribution, the band gap distribution, the thermal conductivity distribution, and the thermal expansion coefficient distribution of the exciton-phonon quantum interference layer have the following relationship: A ≤ E ≤ G ≤ C; the In / H element ratio, the In / O element ratio, and the In / C element ratio of the exciton-phonon quantum interference layer have the following relationship: L ≤ J ≤ M; the exciton-phonon quantum interference layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

8. The GaN-based compound semiconductor laser device according to Claim 1, wherein The active layer is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3 ≥ m ≥ 1. The well layer is any one or any combination of any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the thickness is 10-80 angstrom meters. The barrier layer is any one or any combination of any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the thickness is 10-120 angstrom meters.

9. The GaN-based compound semiconductor laser device according to Claim 1, wherein The lower confining layer, the lower waveguide layer, the upper waveguide layer, and the upper confining layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, or any combination thereof.

10. A GaN-based compound semiconductor laser device as set forth in claim 1, wherein The substrate comprises any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, a sapphire / SiO2 composite substrate, a sapphire / AlN composite substrate, a sapphire / SiNx, a sapphire / SiO2 / SiNx composite substrate, a magnesium-aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

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