Laminated solar cell and preparation method thereof

Abstract

The invention relates to a laminated solar cell and a preparation method thereof. The laminated solar cell comprises a transparent conductive layer, a P-type doped silicon material layer, an intrinsic monocrystalline silicon layer, a first N-type doped silicon material layer, a second N-type doped silicon material layer, a P-type doped layer, a hole transport layer, a perovskite light absorption layer and an electron transport layer which are sequentially laminated. The doping concentration of the second N-type doped silicon material layer and the doping concentration of the P-type doped silicon material layer are both larger than the doping concentration of the first N-type doped silicon material layer and the doping concentration of the P-type doped silicon material layer. According to the laminated solar cell, the second N-type doped silicon material layer and the P-type doped layer with relatively high doping concentration are arranged between the crystalline silicon part and the perovskite part, so that electrons can be positioned at the bottom of a conduction band, holes can be positioned at the top of a valence band, and the recombination efficiency of the electrons and the holes is improved; and the first N-type doped silicon material layer and the P-type doped silicon material layer form a carrier concentration gradient, so that efficient tunneling can be realized, the recombination current is improved, and the cell performance is improved.

Description

Technical Field

[0001] The present invention relates to the field of photovoltaic technology, and in particular to a laminated solar cell and a preparation method thereof. Background Art

[0002] Crystalline silicon / perovskite tandem solar cells use two series-connected sub-cells to absorb sunlight in different bands, maximizing the use of the energy of the solar spectrum. The theoretical limit of its conversion efficiency reaches 45%, which is much higher than the 33% of single-junction tandem solar cells. The open-circuit voltage of a tandem solar cell is the sum of the open-circuit voltages of the two sub-cells, and the current is the minimum current of the two sub-cells. The two sub-cells are connected in series through a tunneling layer, which plays the role of recombining the electrons and holes of the connected sub-cells. The tunneling efficiency of the tunneling layer of traditional tandem solar cells is low, which is not conducive to improving the conversion efficiency of the cell. Summary of the invention

[0003] Based on this, it is necessary to provide a stacked solar cell and a method for preparing the same to solve the problem of low tunneling efficiency of the tunneling layer of the conventional stacked solar cell.

[0004] The first aspect of the present invention is to provide a stacked solar cell, the scheme is as follows:

[0005] A stacked solar cell, comprising a transparent conductive layer, a P-type doped silicon material layer, an intrinsic single crystal silicon layer, a first N-type doped silicon material layer, a second N-type doped silicon material layer, a P-type doped layer, a hole transport layer, a perovskite light absorption layer and an electron transport layer stacked in sequence;

[0006] The doping concentrations of the second N-type doped silicon material layer and the P-type doped silicon material layer are both greater than the doping concentrations of the first N-type doped silicon material layer and the P-type doped silicon material layer.

[0007] In one of the embodiments, the thickness of the P-type doped layer is 1 nm to 1000 nm.

[0008] In one embodiment, the thickness of the second N-type doped silicon material layer is 1 nm-1000 nm.

[0009] In one embodiment, the doping concentration of the P-type doping layer is 10 18 cm -3 ~10 20 cm -3 .

[0010] In one embodiment, the doping concentration of the second N-type doped silicon material layer is 10 18 cm -3 ~10 20 cm -3 .

[0011] In one embodiment, the doping concentration of the P-type doped silicon material layer is 10 13 cm -3 ~10 17 cm -3 .

[0012] In one embodiment, the doping concentration of the first N-type doped silicon material layer is 10 13 cm -3 ~10 17 cm -3 .

[0013] In one of the embodiments, the material of the P-type doping layer is selected from one or more of metal-doped molybdenum trioxide and metal-doped nickel oxide.

[0014] In one embodiment, the material of the hole transport layer includes at least one of an inorganic hole transport material and an organic hole transport material.

[0015] The inorganic hole transport material is selected from at least one of nickel oxide, cerium dioxide, copper oxide, cuprous iodide and copper thiocyanate.

[0016] The organic hole transport material is selected from at least one of polyvinyl carbazole, 2,2',7,7'-tetrakis(di-p-tolylamino)spiro-9,9'-bifluorene, and SAMs hole transport material; the SAMs hole transport material includes a functional group and an anchoring group, the SAMs hole transport material is bonded to the P-type doped layer through the anchoring group, and the SAMs hole transport material has a dipole moment, and the direction of the dipole moment is from the functional group to the anchoring group.

[0017] In one embodiment, the material of the electron transport layer is selected from one or more of C60, C70, [6,6]-phenyl-C61-butyric acid methyl ester, graphene, niobium pentoxide, tin oxide, bismuth trioxide, bismuth sulfide and BCP.

[0018] In one embodiment, the perovskite light absorption layer comprises a perovskite material ABX3; wherein A comprises one or more of cesium ions, rubidium ions, potassium ions, methylamine ions, formamidine ions, methylenediamine ions, benzamidine cations and guanidine cations; B comprises one or more of lead ions, copper ions, zinc ions, gallium ions, tin ions and calcium ions; and X comprises one or more of fluoride ions, chloride ions, bromide ions, iodide ions, thiocyanate ions, tetrafluoroborate ions, hexafluorophosphate ions, formate ions and acetate ions.

[0019] In one of the embodiments, the stacked solar cell further includes a first electrode and a second electrode, wherein the first electrode is disposed on the transparent conductive layer, and the second electrode is disposed on the electron transport layer.

[0020] The second aspect of the present invention is to provide a method for preparing a stacked solar cell, the scheme is as follows:

[0021] A method for preparing a stacked solar cell comprises the following steps:

[0022] providing an intrinsic single crystal silicon layer;

[0023] Preparing a P-type doped silicon material layer on one side of the intrinsic single crystal silicon layer;

[0024] Prepare a first N-type doped silicon material layer on the other side of the intrinsic single crystal silicon layer;

[0025] Preparing a transparent conductive layer on the P-type doped silicon material layer;

[0026] Preparing a second N-type doped silicon material layer on the first N-type doped silicon material layer;

[0027] Preparing a P-type doped layer on the second N-type doped silicon material layer;

[0028] Preparing a hole transport layer on the P-type doped layer;

[0029] preparing a perovskite light absorbing layer on the hole transport layer;

[0030] preparing an electron transport layer on the perovskite light absorbing layer;

[0031] The doping concentrations of the second N-type doped silicon material layer and the P-type doped silicon material layer are both greater than the doping concentrations of the first N-type doped silicon material layer and the P-type doped silicon material layer.

[0032] Compared with the conventional technology, the above-mentioned laminated solar cell and its preparation method have the following beneficial effects:

[0033] The above-mentioned stacked solar cell and its preparation method are beneficial to locate electrons at the bottom of the conduction band and holes at the top of the valence band by arranging a second N-type doped silicon material layer and a P-type doped layer with a higher doping concentration between the crystalline silicon part and the perovskite part, thereby improving the recombination efficiency of electrons and holes, and forming a carrier concentration gradient with the first N-type doped silicon material layer and the P-type doped silicon material layer, which can achieve efficient tunneling, increase the recombination current, and improve the battery performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] FIG1 is a schematic structural diagram of a stacked solar cell according to an embodiment;

[0035] 2 is a schematic diagram of the energy band structure of the first N-type doped silicon material layer, the second N-type doped silicon material layer, the P-type doped layer and the hole transport layer.

[0036] Description of reference numerals:

[0037] 100. stacked solar cell; 101. transparent conductive layer; 102. P-type doped silicon material layer; 103. intrinsic single crystal silicon layer; 104. first N-type doped silicon material layer; 105. second N-type doped silicon material layer; 106. P-type doped layer; 107. hole transport layer; 108. perovskite light absorption layer; 109. electron transport layer; 110. first electrode; 111. second electrode. DETAILED DESCRIPTION

[0038] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present invention, so the present invention is not limited by the specific embodiments disclosed below.

[0039] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which the present invention belongs. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0040] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0041] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0042] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0043] Please refer to Figure 1, a stacked solar cell 100 of an embodiment includes a transparent conductive layer 101, a P-type doped silicon material layer 102, an intrinsic single crystal silicon layer 103, a first N-type doped silicon material layer 104, a second N-type doped silicon material layer 105, a P-type doped layer 106, a hole transport layer 107, a perovskite light absorption layer 108 and an electron transport layer 109 stacked in sequence.

[0044] The doping concentrations of the second N-type doped silicon material layer 105 and the P-type doped silicon material layer 106 are both greater than the doping concentrations of the first N-type doped silicon material layer 104 and the P-type doped silicon material layer 102 .

[0045] As shown in FIG2 , the stacked solar cell 100 is advantageous in that the electrons are located at the bottom of the conduction band and the holes are located at the top of the valence band by arranging a second N-type doped silicon material layer 105 and a P-type doped silicon material layer 106 with a higher doping concentration between the crystalline silicon part and the perovskite part, thereby improving the recombination efficiency of electrons and holes, and forming a carrier concentration gradient with the first N-type doped silicon material layer 104 and the P-type doped silicon material layer 102, thereby achieving efficient tunneling, increasing the recombination current, and improving the battery performance.

[0046] Conventional technology uses TCO materials as tunneling layers. TCO materials generally have a high indium content, resulting in high costs. The stacked solar cell 100 can avoid using TCO materials as tunneling layers, which is beneficial for reducing production costs.

[0047] The P-type doped silicon material layer 102 may be P-type doped amorphous silicon.

[0048] In some examples, the doping concentration of the P-type doped silicon material layer 102 is 10 13cm -3 ~10 17 cm -3 .

[0049] The first N-type doped silicon material layer 104 may be N-type doped amorphous silicon.

[0050] In some examples, the doping concentration of the first N-type doped silicon material layer 104 is 10 13 cm -3 ~10 17 cm -3 .

[0051] The P-type doped layer 106 may be a P-type doped metal oxide.

[0052] In some examples, the material of the P-type doping layer 106 is one or more of metal-doped molybdenum trioxide and metal-doped nickel oxide, wherein the doped metal is, for example but not limited to, one or more of K, Na, and Cs.

[0053] In some examples, the doping concentration of the P-type doping layer 106 is 10 18 cm -3 ~10 20 cm -3 .

[0054] The second N-type doped silicon material layer 105 may be N-type doped amorphous silicon.

[0055] In some examples, the doping concentration of the second N-type doped silicon material layer 105 is 10 18 cm -3 ~10 20 cm -3 .

[0056] The second N-type doped silicon material layer 105 and the P-type doped layer 106 with the above doping concentration cooperate with each other, so that electrons are located at the bottom of the conduction band and holes are located at the top of the valence band, which well connects the crystalline silicon part and the perovskite part in series to achieve efficient carrier recombination.

[0057] Optionally, the material of the hole transport layer 107 may be at least one of an inorganic hole transport material and an organic hole transport material.

[0058] Exemplarily, the inorganic hole transport material is such as metal oxide, metal halide, metal halide, etc., more specifically one or more of nickel oxide (NiO), cerium dioxide (CeO2), copper oxide (CuO), cuprous iodide (CuI), copper thiocyanate (CuSCN), etc.

[0059] The organic hole transport material is, for example, at least one of polyvinylcarbazole, 2,2',7,7'-tetrakis(di-p-tolylamino)spiro-9,9'-bifluorene, and SAMs hole transport materials.

[0060] The SAMs hole transport material includes a functional group and an anchoring group. The SAMs material is bonded to the metal oxide nanomaterial of the core 11 through the anchoring group. The SAMs material has a dipole moment, and the direction of the dipole moment is from the functional group to the anchoring group, so that holes can be selectively transported.

[0061] Exemplarily, SAMs hole transport materials include, but are not limited to, [6-(9H-carbazole-9-yl)hexyl]phosphonic acid (6PACz), [1-(9H-carbazole-9-yl)methyl]phosphonic acid (1PACz), [2-(9H-carbazole-9-yl)ethyl]phosphonic acid (2PACz), [3-(9H-carbazole-9-yl)propyl]phosphonic acid (3PACz), [4-(9H-carbazole-9-yl)butyl]phosphonic acid (4PACz), [8-(9H-carbazole-9-yl)octyl]phosphonic acid (8PACz), [4-(9H-9'-phenyl-3,3'-dicarbazole-9-yl)butyl]phosphonic acid (4PABCz), [2-(9H-9'-phenyl-3,3'-dicarbazole-9-yl)butyl]phosphonic acid (4PABCz), [4-(9H-9'-phenyl-3,3'-dicarbazole-9-yl)butyl]phosphonic acid (4PABCz), [2-(9H-9'-phenyl-3,3'-dicarbazole-9-yl)propyl]phosphonic acid (3PAC ... 6-(3,6-dibromo-9H-carbazole-9-yl)hexyl]phosphonic acid (2Br-6PACz), [2-(3,6-dimethyl-9H-carbazole-9-yl)ethyl]phosphonic acid (Me-2PACz), [3-(3,6-dimethyl-9H-carbazole-9-yl)propyl]phosphonic acid (Me-3PACz), [6-(3,6-dimethyl-9H-carbazole-9-yl)hexyl]phosphonic acid (Me-6PACz), [8-(3,6-dimethyl-9H-carbazole-9 -yl)octyl]phosphonic acid (Me-8PACz), [1-(3,6-di-tert-butyl-9H-carbazole-9-yl)methyl]phosphonic acid (tBu-1PACz), [2-(3,6-di-tert-butyl-9H-carbazole-9-yl)ethyl]phosphonic acid (tBu-2PACz), [3-(3,6-di-tert-butyl-9H-carbazole-9-yl)propyl]phosphonic acid (tBu-3PACz), [4-(3,6-di-tert-butyl-9H-carbazole-9-yl)butyl]phosphonic acid (tBu-4PACz), [6-(3,6-di-tert-butyl-9H-carbazole-9-yl)hexyl]phosphonic acid (tBu-1PACz), [8-(3,6-di-tert-butyl-9H-carbazole-9-yl)octyl]phosphonic acid Phosphonic acid (tBu-8PACz), [1-(3,6-diphenyl-9H-carbazole-9-yl)methyl]phosphonic acid (Ph-1PACz), [2-(3,6-diphenyl-9H-carbazole-9-yl)ethyl]phosphonic acid (Ph-2PACz), [3-(3,6-diphenyl-9H-carbazole-9-yl)propyl]phosphonic acid (Ph-3PACz), [4-(3,6-diphenyl-9H-carbazole-9-yl)butyl]phosphonic acid (Ph-4PACz), [6-(3,6-diphenyl-9H-carbazole-9-yl)hexyl]phosphonic acid (Ph-6PACz), [8-(3,6-diphenyl-9H-carbazole-9-yl)octyl]phosphonic acid (Ph-8 ...6-dibromo-9H-carbazole-9-yl)butyl]phosphonic acid (2Br-4PACz), [4-(7H-dibenzocarbazole-7-yl)butyl]phosphonic acid (4PADCB), [2-(7H-dibenzocarbazole-7-yl)ethyl]phosphonic acid (2PADCB), [6-(3,6-dimethoxy-9H-carbazole-9-yl)hexyl]phosphonic acid (MeO-6PACz), [4-(N,N-bis(4-methoxyphenylamino)phenyl)propyl]phosphonic acid (MeO-TPA-3PA), [2-(10H-phenoxazine-10-yl)ethyl]phosphonic acid (2PAPXZ), [1-(3,6-dimethyl-9H-carbazole-9-yl)methyl]phosphonic acid (Me-1PACz), [4-(3,6-dimethyl-9H-carbazole-9 -yl)butyl]phosphonic acid (Me-4PACz), [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid (MeO-2PACz), [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid (MeO-4PACz), [4-(2,7-dibromo-9,9-dimethylacridine-10(9H)-yl)butyl]phosphonic acid (2Br-4PADMAc), [4-(7H-dibenzocarbazole-7-yl)butyl]phosphonic acid, [4-(2,7-dibromo-9,9-dimethylacridine-10(9H)-yl)butyl]phosphonic acid, polyvinylcarbazole, 2,2',7,7'-tetrakis(di-p-tolylamino)spiro-9,9'-bifluorene (spiro-TTB), etc., one or more thereof. ,

[0062] In some of the examples, the material of the electron transport layer 109 is, for example, but not limited to, one or more of fullerene (C60), C70, fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), graphene, niobium pentoxide (Nb2O5), tin oxide, bismuth trioxide (Bi2O3), bismuth sulfide (Bi2S3), and BCP.

[0063] In some examples, the perovskite light absorbing layer 108 comprises a perovskite material ABX3. A includes, but is not limited to, one or more of cesium ions, rubidium ions, potassium ions, methylamine ions, formamidinium ions, methylenediamine ions, benzamidinium cations, and guanidinium cations. B includes, but is not limited to, one or more of lead ions, copper ions, zinc ions, gallium ions, tin ions, and calcium ions. X includes, but is not limited to, one or more of fluoride ions, chloride ions, bromide ions, iodide ions, thiocyanate ions, tetrafluoroborate ions, hexafluorophosphate ions, formate ions, and acetate ions.

[0064] In some examples, the thickness of the transparent conductive layer 101 is 1 nm to 1000 nm.

[0065] In some examples, the thickness of the P-type doped silicon material layer 102 is 1 nm to 1000 nm.

[0066] In some examples, the intrinsic single crystal silicon layer 103 has a thickness of 100 μm to 1000 μm.

[0067] In some examples, the thickness of the first N-type doped silicon material layer 104 is 1 nm-1000 nm.

[0068] In some examples, the thickness of the P-type doped layer 106 is 1 nm to 1000 nm.

[0069] In some examples, the thickness of the second N-type doped silicon material layer 105 is 1 nm-1000 nm.

[0070] In some examples, the thickness of the hole transport layer 107 is 1 nm to 100 nm.

[0071] In some examples, the thickness of the perovskite light absorbing layer 108 is 500 nm to 1500 nm.

[0072] In some examples, the thickness of the electron transport layer 109 is 1 nm to 100 nm.

[0073] In some examples, the band gap of the perovskite material in the perovskite light absorbing layer 108 is 1.65 eV-1.70 eV.

[0074] In some examples, the stacked solar cell 100 further includes a first electrode 110 and a second electrode 111. The first electrode 110 is disposed on the transparent conductive layer 101, and the second electrode 111 is disposed on the electron transport layer 109.

[0075] The first electrode 110 and the second electrode 111 are made of metal, such as but not limited to silver, copper, aluminum, etc.

[0076] Furthermore, the present invention also provides a method for preparing any of the above-mentioned examples of the stacked solar cell 100.

[0077] A method for preparing a stacked solar cell 100 according to an embodiment includes the following steps:

[0078] Providing an intrinsic single crystal silicon layer 103;

[0079] A P-type doped silicon material layer 102 is prepared on one side of the intrinsic single crystal silicon layer 103;

[0080] Prepare a first N-type doped silicon material layer 104 on the other side of the intrinsic single crystal silicon layer 103;

[0081] A transparent conductive layer 101 is formed on the P-type doped silicon material layer 102;

[0082] Forming a second N-type doped silicon material layer 105 on the first N-type doped silicon material layer 104;

[0083] Forming a P-type doped layer 106 on the second N-type doped silicon material layer 105;

[0084] A hole transport layer 107 is formed on the P-type doped layer 106;

[0085] A perovskite light absorbing layer 108 is prepared on the hole transport layer 107;

[0086] An electron transport layer 109 is prepared on the perovskite light absorbing layer 108;

[0087] The doping concentrations of the second N-type doped silicon material layer 105 and the P-type doped silicon material layer 106 are both greater than the doping concentrations of the first N-type doped silicon material layer 104 and the P-type doped silicon material layer 102 .

[0088] In some examples, the tandem solar cell 100 further includes the following steps:

[0089] A first electrode 110 is formed on the transparent conductive layer 101;

[0090] The second electrode 111 is formed on the electron transport layer 109 .

[0091] Optionally, the preparation process of the above-mentioned transparent conductive layer 101, P-type doped silicon material layer 102, intrinsic single crystal silicon layer 103, first N-type doped silicon material layer 104, second N-type doped silicon material layer 105, P-type doped layer 106, hole transport layer 107, perovskite light absorption layer 108 and electron transport layer 109 can be but not limited to evaporation, magnetron sputtering, atomic layer deposition, electrochemical deposition, molecular beam evaporation, dip coating, spin coating, blade coating, slit coating, rod coating and inkjet printing.

[0092] The following specific examples are provided to further illustrate the present invention. The present invention provides the following specific examples for a better understanding of the present invention, but is not limited to the specific implementation methods and does not limit the protection scope of the present invention.

[0093] Example 1

[0094] The method for preparing the stacked solar cell provided in this embodiment comprises the following steps:

[0095] Step 1, obtain a single crystal silicon wafer, clean and texturize the single crystal silicon wafer to serve as an intrinsic single crystal silicon layer.

[0096] Step 2: Boron-doped amorphous silicon is deposited on the first side of the intrinsic single crystal silicon layer using a PECVD process to prepare a P-type doped silicon material layer. The thickness of the P-type doped silicon material layer is 15 nm, and the doping concentration is 10 15 cm -3 .

[0097] Step 3: Using PECVD process, phosphorus-doped amorphous silicon is deposited on the second side of the intrinsic single crystal silicon layer to prepare a first N-type doped silicon material layer. The thickness of the first N-type doped silicon material layer is 20 nm, and the doping concentration is 10 16 cm -3 .

[0098] Step 4: depositing ITO on the P-type doped silicon material layer by magnetron sputtering process to prepare a transparent conductive layer with a thickness of 150 nm.

[0099] Step 5: Deposit phosphorus-doped amorphous silicon on the first N-type doped silicon material layer using a PECVD process to prepare a second N-type doped silicon material layer. The second N-type doped silicon material layer has a thickness of 10 nm and a doping concentration of 10 18 cm -3 .

[0100] Step 6: Potassium-doped molybdenum trioxide is deposited on the second N-type doped silicon material layer using a PECVD process to prepare a P-type doped layer. The thickness of the P-type doped layer is 10 nm and the doping concentration is 10 18 cm -3 .

[0101] Step 7: Deposit NiO on the P-type doped layer using a magnetron sputtering process. x , a hole transport layer with a thickness of 15 nm was prepared.

[0102] Step 8: Deposit perovskite Cs on the hole transport layer using a spin coating process 0.05 FA 0.8 MA 0.15 Pb(I 0.75 Br 0.25 )3, a perovskite light absorption layer with a thickness of 800 nm was prepared.

[0103] Step 9: Depositing electron transport material C60 on the perovskite light absorption layer by a thermal evaporation process to prepare an electron transport layer 1 with a thickness of 16 nm.

[0104] Step 10: depositing electron transport material SnO2 on the electron transport layer 1 by atomic layer deposition process to prepare an electron transport layer 2 with a thickness of 70 nm.

[0105] Step 11: Deposit electron transport material BCP on the electron transport layer 2 by thermal evaporation process to prepare an electron transport layer 3 with a thickness of 5 nm.

[0106] Step 12: depositing metallic silver on the transparent conductive layer by a thermal evaporation process to prepare a first electrode.

[0107] Step 13: depositing metallic silver on the electron transport layer 3 by a thermal evaporation process to prepare a second electrode.

[0108] Example 2

[0109] The method for preparing the stacked solar cell provided in this embodiment comprises the following steps:

[0110] Step 1, obtain a single crystal silicon wafer, clean and texturize the single crystal silicon wafer to serve as an intrinsic single crystal silicon layer.

[0111] Step 2: Boron-doped amorphous silicon is deposited on the first side of the intrinsic single crystal silicon layer using a PECVD process to prepare a P-type doped silicon material layer. The thickness of the P-type doped silicon material layer is 15 nm, and the doping concentration is 10 15 cm -3 .

[0112] Step 3: Using PECVD process, phosphorus-doped amorphous silicon is deposited on the second side of the intrinsic single crystal silicon layer to prepare a first N-type doped silicon material layer. The thickness of the first N-type doped silicon material layer is 20 nm, and the doping concentration is 10 16 cm -3 .

[0113] Step 4: depositing ITO on the P-type doped silicon material layer by magnetron sputtering process to prepare a transparent conductive layer with a thickness of 150 nm.

[0114] Step 5: Deposit phosphorus-doped amorphous silicon on the first N-type doped silicon material layer using a PECVD process to prepare a second N-type doped silicon material layer. The second N-type doped silicon material layer has a thickness of 10 nm and a doping concentration of 10 19 cm -3 .

[0115] Step 6: Potassium-doped molybdenum trioxide is deposited on the second N-type doped silicon material layer using a PECVD process to prepare a P-type doped layer. The thickness of the P-type doped layer is 10 nm and the doping concentration is 10 19 cm -3 .

[0116] Step 7: Deposit NiO on the P-type doped layer using a magnetron sputtering process. x , a hole transport layer with a thickness of 15 nm was prepared.

[0117] Step 8: Deposit perovskite Cs on the hole transport layer using a spin coating process 0.05 FA 0.8 MA 0.15 Pb(I 0.75 Br 0.25 )3, a perovskite light absorption layer with a thickness of 800 nm was prepared.

[0118] Step 9: Depositing electron transport material C60 on the perovskite light absorption layer by a thermal evaporation process to prepare an electron transport layer 1 with a thickness of 16 nm.

[0119] Step 10: depositing electron transport material SnO2 on the electron transport layer 1 by atomic layer deposition process to prepare an electron transport layer 2 with a thickness of 70 nm.

[0120] Step 11: Deposit electron transport material BCP on the electron transport layer 2 by thermal evaporation process to prepare an electron transport layer 3 with a thickness of 5 nm.

[0121] Step 12: depositing metallic silver on the transparent conductive layer by a thermal evaporation process to prepare a first electrode.

[0122] Step 13: depositing metallic silver on the electron transport layer 3 by a thermal evaporation process to prepare a second electrode.

[0123] Example 3

[0124] The method for preparing the stacked solar cell provided in this embodiment comprises the following steps:

[0125] Step 1, obtain a single crystal silicon wafer, clean and texturize the single crystal silicon wafer to serve as an intrinsic single crystal silicon layer.

[0126] Step 2: Boron-doped amorphous silicon is deposited on the first side of the intrinsic single crystal silicon layer using a PECVD process to prepare a P-type doped silicon material layer. The thickness of the P-type doped silicon material layer is 15 nm, and the doping concentration is 10 15 cm -3 .

[0127] Step 3: Using PECVD process, phosphorus-doped amorphous silicon is deposited on the second side of the intrinsic single crystal silicon layer to prepare a first N-type doped silicon material layer. The thickness of the first N-type doped silicon material layer is 20 nm, and the doping concentration is 10 16 cm -3 .

[0128] Step 4: depositing ITO on the P-type doped silicon material layer by magnetron sputtering process to prepare a transparent conductive layer with a thickness of 150 nm.

[0129] Step 5: Deposit phosphorus-doped amorphous silicon on the first N-type doped silicon material layer using a PECVD process to prepare a second N-type doped silicon material layer. The second N-type doped silicon material layer has a thickness of 10 nm and a doping concentration of 10 20 cm -3 .

[0130] Step 6: Potassium-doped molybdenum trioxide is deposited on the second N-type doped silicon material layer using a PECVD process to prepare a P-type doped layer. The thickness of the P-type doped layer is 10 nm and the doping concentration is 10 20 cm -3 .

[0131] Step 7: Deposit NiO on the P-type doped layer using a magnetron sputtering process. x , a hole transport layer with a thickness of 15 nm was prepared.

[0132] Step 8: Deposit perovskite Cs on the hole transport layer using a spin coating process 0.05 FA 0.8 MA 0.15 Pb(I 0.75 Br 0.25 )3, a perovskite light absorption layer with a thickness of 800 nm was prepared.

[0133] Step 9: Depositing electron transport material C60 on the perovskite light absorption layer by a thermal evaporation process to prepare an electron transport layer 1 with a thickness of 16 nm.

[0134] Step 10: depositing electron transport material SnO2 on the electron transport layer 1 by atomic layer deposition process to prepare an electron transport layer 2 with a thickness of 70 nm.

[0135] Step 11: Deposit electron transport material BCP on the electron transport layer 2 by thermal evaporation process to prepare an electron transport layer 3 with a thickness of 5 nm.

[0136] Step 12: depositing metallic silver on the transparent conductive layer by a thermal evaporation process to prepare a first electrode.

[0137] Step 13: depositing metallic silver on the electron transport layer 3 by a thermal evaporation process to prepare a second electrode.

[0138] Comparative Example 1

[0139] The method for preparing the stacked solar cell of this embodiment comprises the following steps:

[0140] Step 1, obtain a single crystal silicon wafer, clean and texturize the single crystal silicon wafer to serve as an intrinsic single crystal silicon layer.

[0141] Step 2: Boron-doped amorphous silicon is deposited on the first side of the intrinsic single crystal silicon layer using a PECVD process to prepare a P-type doped silicon material layer. The thickness of the P-type doped silicon material layer is 15 nm, and the doping concentration is 10 15 cm -3 .

[0142] Step 3: Using PECVD process, phosphorus-doped amorphous silicon is deposited on the second side of the intrinsic single crystal silicon layer to prepare a first N-type doped silicon material layer. The thickness of the first N-type doped silicon material layer is 20 nm, and the doping concentration is 10 16 cm -3 .

[0143] Step 4: depositing ITO on the P-type doped silicon material layer by magnetron sputtering process to prepare a transparent conductive layer with a thickness of 150 nm.

[0144] Step 5: Depositing ITO on the first N-type doped silicon material layer by magnetron sputtering to prepare a TCO layer with a thickness of 20 nm.

[0145] Step 6: Deposit NiO on the TCO layer using a magnetron sputtering process x , a hole transport layer with a thickness of 15 nm was prepared.

[0146] Step 7: Deposit perovskite Cs on the hole transport layer using a spin coating process 0.05 FA 0.8 MA 0.15 Pb(I 0.75 Br 0.25 )3, a perovskite light absorption layer with a thickness of 800 nm was prepared.

[0147] Step 8: Depositing electron transport material C60 on the perovskite light absorption layer by a thermal evaporation process to prepare an electron transport layer 1 with a thickness of 16 nm.

[0148] Step 9: depositing electron transport material SnO2 on the electron transport layer 1 by atomic layer deposition process to prepare an electron transport layer 2 with a thickness of 70 nm.

[0149] Step 10: Depositing electron transport material BCP on the electron transport layer 2 by thermal evaporation process to prepare an electron transport layer 3 with a thickness of 5 nm.

[0150] Step 11: depositing metallic silver on the transparent conductive layer by a thermal evaporation process to prepare a first electrode.

[0151] Step 12: depositing metallic silver on the electron transport layer 3 by a thermal evaporation process to prepare a second electrode.

[0152] Comparative Example 2

[0153] The method for preparing the stacked solar cell of this embodiment comprises the following steps:

[0154] Step 1, obtain a single crystal silicon wafer, clean and texturize the single crystal silicon wafer to serve as an intrinsic single crystal silicon layer.

[0155] Step 2: Boron-doped amorphous silicon is deposited on the first side of the intrinsic single crystal silicon layer using a PECVD process to prepare a P-type doped silicon material layer. The thickness of the P-type doped silicon material layer is 15 nm, and the doping concentration is 10 15 cm -3 .

[0156] Step 3: Using PECVD process, phosphorus-doped amorphous silicon is deposited on the second side of the intrinsic single crystal silicon layer to prepare a first N-type doped silicon material layer. The thickness of the first N-type doped silicon material layer is 20 nm, and the doping concentration is 10 16 cm -3 .

[0157] Step 4: depositing ITO on the P-type doped silicon material layer by magnetron sputtering process to prepare a transparent conductive layer with a thickness of 150 nm.

[0158] Step 5: depositing microcrystalline silicon on the first N-type doped silicon material layer by chemical vapor deposition to prepare a microcrystalline silicon layer with a thickness of 15 nm.

[0159] Step 6: Deposit NiO on the microcrystalline silicon layer using a magnetron sputtering process. x , a hole transport layer with a thickness of 15 nm was prepared.

[0160] Step 7: Deposit perovskite Cs on the hole transport layer using a spin coating process 0.05 FA 0.8 MA 0.15 Pb(I 0.75 Br 0.25 )3, a perovskite light absorption layer with a thickness of 800 nm was prepared.

[0161] Step 8: Depositing electron transport material C60 on the perovskite light absorption layer by a thermal evaporation process to prepare an electron transport layer 1 with a thickness of 16 nm.

[0162] Step 9: depositing electron transport material SnO2 on the electron transport layer 1 by atomic layer deposition process to prepare an electron transport layer 2 with a thickness of 70 nm.

[0163] Step 10: Depositing electron transport material BCP on the electron transport layer 2 by thermal evaporation process to prepare an electron transport layer 3 with a thickness of 5 nm.

[0164] Step 11: depositing metallic silver on the transparent conductive layer by a thermal evaporation process to prepare a first electrode.

[0165] Step 12: depositing metallic silver on the electron transport layer 3 by a thermal evaporation process to prepare a second electrode.

[0166] The performance of the prepared stacked solar cell was tested, and the test results are shown in Table 1.

[0167] Table 1 Performance of tandem solar cells

[0168]

[0169] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0170] The above-mentioned embodiments only express several implementation methods of the present invention, and the description is relatively specific and detailed, but it cannot be understood as limiting the scope of the invention patent. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be based on the attached claims, and the description can be used to interpret the content of the claims.

Claims

1. A stacked solar cell, characterized in that: It includes a transparent conductive layer, a P-type doped silicon material layer, an intrinsic single crystal silicon layer, a first N-type doped silicon material layer, a second N-type doped silicon material layer, a P-type doped layer, a hole transport layer, a perovskite light absorption layer and an electron transport layer stacked in sequence; The doping concentrations of the second N-type doped silicon material layer and the P-type doped silicon material layer are both greater than the doping concentrations of the first N-type doped silicon material layer and the P-type doped silicon material layer.

2. The tandem solar cell according to claim 1, characterized in that: The stacked solar cell meets at least one of the following characteristics (1) to (2): (1) The thickness of the P-type doped layer is 1 nm to 1000 nm; (2) The thickness of the second N-type doped silicon material layer is 1 nm to 1000 nm.

3. The tandem solar cell according to claim 1, characterized in that: The stacked solar cell meets at least one of the following characteristics (1) to (2): (1) The doping concentration of the P-type doping layer is 10 18 cm -3 ~10 20 cm -3 ; (2) The doping concentration of the second N-type doped silicon material layer is 10 18 cm -3 ~10 20 cm -3 .

4. The tandem solar cell according to claim 1, wherein: The stacked solar cell meets at least one of the following characteristics (1) to (2): (1) The doping concentration of the P-type doped silicon material layer is 10 13 cm -3 ~10 17 cm -3 ; (2) The doping concentration of the first N-type doped silicon material layer is 10 13 cm -3 ~10 17 cm -3 .

5. The tandem solar cell according to any one of claims 1 to 4, characterized in that: The material of the P-type doping layer is selected from one or more of metal-doped molybdenum trioxide and metal-doped nickel oxide.

6. The tandem solar cell according to any one of claims 1 to 4, characterized in that: The material of the hole transport layer includes at least one of an inorganic hole transport material and an organic hole transport material; The inorganic hole transport material is selected from at least one of nickel oxide, cerium dioxide, copper oxide, cuprous iodide, and copper thiocyanate; The organic hole transport material is selected from at least one of polyvinyl carbazole, 2,2',7,7'-tetrakis(di-p-tolylamino)spiro-9,9'-bifluorene, and SAMs hole transport material; the SAMs hole transport material includes a functional group and an anchoring group, the SAMs hole transport material is bonded to the P-type doped layer through the anchoring group, and the SAMs hole transport material has a dipole moment, and the direction of the dipole moment is from the functional group to the anchoring group.

7. The tandem solar cell according to any one of claims 1 to 4, characterized in that: The material of the electron transport layer is selected from one or more of C60, C70, [6,6]-phenyl-C61-butyric acid methyl ester, graphene, niobium pentoxide, tin oxide, bismuth trioxide, bismuth sulfide and BCP.

8. The tandem solar cell according to any one of claims 1 to 4, characterized in that: The perovskite light absorption layer comprises a perovskite material ABX3; wherein A comprises one or more of cesium ions, rubidium ions, potassium ions, methylamine ions, formamidine ions, methylenediamine ions, benzamidine cations and guanidinium cations; B comprises one or more of lead ions, copper ions, zinc ions, gallium ions, tin ions and calcium ions; and X comprises one or more of fluoride ions, chloride ions, bromide ions, iodide ions, thiocyanate ions, tetrafluoroborate ions, hexafluorophosphate ions, formate ions and acetate ions.

9. The tandem solar cell according to any one of claims 1 to 4, characterized in that: The stacked solar cell further includes a first electrode and a second electrode, wherein the first electrode is disposed on the transparent conductive layer, and the second electrode is disposed on the electron transport layer.

10. A method for preparing a stacked solar cell, characterized in that: The following steps are involved: providing an intrinsic single crystal silicon layer; Preparing a P-type doped silicon material layer on one side of the intrinsic single crystal silicon layer; Prepare a first N-type doped silicon material layer on the other side of the intrinsic single crystal silicon layer; Preparing a transparent conductive layer on the P-type doped silicon material layer; Preparing a second N-type doped silicon material layer on the first N-type doped silicon material layer; Preparing a P-type doped layer on the second N-type doped silicon material layer; Preparing a hole transport layer on the P-type doped layer; preparing a perovskite light absorbing layer on the hole transport layer; preparing an electron transport layer on the perovskite light absorbing layer; The doping concentrations of the second N-type doped silicon material layer and the P-type doped silicon material layer are both greater than the doping concentrations of the first N-type doped silicon material layer and the P-type doped silicon material layer.

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