Miniature electronic light beam with large visual angle

Abstract

The invention discloses a miniature electronic light beam device. The apparatus may include a set of electron optical elements configured to direct a primary electron beam to a sample. The set of electro-optical elements may include an objective lens. The apparatus may also include a deflection subsystem. The deflection subsystem may include one or more lens front deflectors positioned between an electron beam source and the objective lens. The deflection subsystem may also include a post-lens deflector positioned between the objective lens and the sample. The deflection subsystem may also include a post-lens micro-optical element positioned between the objective lens and the sample.

Description

Technical Field

[0001] The present invention generally relates to a micro electronic light column, and more particularly, to a deflection system that enables the micro electronic light column to have a large viewing angle. Background Art

[0002] Characterization systems identify and classify defects on semiconductor wafers to generate defect populations on a sample. Characterization systems may include optical characterization systems and charged particle characterization systems, such as electron beam systems. In the context of electron beam characterization systems, an electron beam is directed to a sample, and a detector is configured to collect secondary and / or backscattered electrons emitted from the sample to characterize the sample.

[0003] In electron beam characterization systems, the resolution at the corners of the scan field is limited by the deflection aberrations of the system. To overcome these aberrations, a correction element is required. In current electron beam characterization systems, the correction element is placed in front of the objective lens or in the aperture of the objective lens. However, as the size of the electron beam of the electron beam characterization system decreases, the aperture of the objective lens decreases. As the aperture of the objective lens decreases, it becomes more difficult to insert the intra-lens correction element into the aperture of the objective lens.

[0004]

[0006] It would therefore be desirable to provide a system and method that addresses the shortcomings of previous approaches identified above. Summary of the invention

[0005] According to one or more embodiments of the present invention, a large field of view (FOV) micro electron light column device is disclosed. In one embodiment, the device includes a set of electron optical elements configured to direct a primary electron beam of an electron beam source to a sample, the set of electron optical elements including an objective lens. In another embodiment, the device includes a deflection subsystem. In another embodiment, the deflection subsystem includes one or more pre-lens deflectors positioned between the electron beam source and the objective lens. In another embodiment, the deflection subsystem includes a post-lens deflector positioned between the objective lens and the sample. In another embodiment, the deflection subsystem includes a post-lens micro optical element positioned between the objective lens and the sample.

[0006] In one embodiment, the micro-column optical column device can be integrated into a characterization system.

[0007] It is to be understood that both the foregoing general description and the following detailed description are for illustration and explanation only and do not necessarily limit the invention as claimed.The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the general description serve to explain the principles of the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Those skilled in the art may better understand the many advantages of the present invention by referring to the accompanying drawings, in which:

[0009] Figure 1 A simplified schematic diagram illustrating a miniature electronic light column with an integrated deflection system in accordance with one or more embodiments of the present invention.

[0010] Figure 2A Simplified schematic diagram illustrating a deflection system where post-lens correction cannot be applied.

[0011] Figure 2B A simplified schematic diagram of a deflection system illustrating one technique capable of applying post-lens correction in accordance with one or more embodiments of the present invention.

[0012] Figure 3 A simplified schematic diagram illustrating possible scanning fields in which the post-lens deflector is divided into a main field and sub-fields in accordance with one or more embodiments of the present invention.

[0013] Figure 4 Description A flow chart depicts a method or process for applying one or more corrections using a deflection system in accordance with one or more embodiments of the present invention.

[0014] Figure 5 A simplified schematic block diagram illustrating a multi-post characterization system of an integrated deflection system in accordance with one or more embodiments of the present invention. DETAILED DESCRIPTION

[0015] The present invention has been particularly shown and described with respect to specific embodiments and specific features thereof. The embodiments described herein should be regarded as illustrative rather than restrictive. It should be readily apparent to those skilled in the art that various changes and modifications may be made to form and details without departing from the spirit and scope of the present invention. Reference will now be made in detail to the disclosed objects illustrated in the accompanying drawings.

[0016] Embodiments of the present invention are directed to a deflection system for a micro electron beam column. More particularly, embodiments of the present invention are directed to a deflection system configured to maximize the scan size of the micro electron beam by placing one or more components of the deflection system between an objective lens and a sample and placing one or more components of the deflection system between an electron beam source and the objective lens.

[0017] Figure 1 A simplified schematic diagram illustrating a miniature electronic light column 100 with an integrated deflection system 102 in accordance with one or more embodiments of the present invention.

[0018] In an embodiment, the deflection system 102 includes a post-lens deflector 104 and a post-lens micro-optical element 106. The post-lens deflector 104 and the post-lens micro-optical element 106 can be positioned at a selected position between the objective lens 108 and the sample 112. By placing one or more components of the deflection system 102 at a selected position below the objective lens 108, the scan size of the deflection system 102 can be maximized, so that the micro electron light column 100 can have a large viewing angle.

[0019] The post-lens micro-optical element 106 may include any micro-optical element known in the art. For example, the post-lens micro-optical element 106 may include one or more extraction control electrodes. As another example, the post-lens micro-optical element 106 may include one or more shielding electrodes. As another example, the post-lens micro-optical element 106 may include a post-lens detector. As another example, the post-lens micro-optical element 106 may include one or more additional post-lens deflectors. As another example, the post-lens micro-optical element 106 may include one or more electrostatic lenses. As another example, the post-lens micro-optical element 106 may include one or more micro magnetic deflectors.

[0020] The post-lens deflector 104 and the post-lens micro-optical element 106 may be formed using one or more silicon micromachining techniques and one or more micro-electromechanical (MEMS) materials such as silicon and borosilicate glass.

[0021] Additionally, the deflection system 102 may include one or more pre-lens deflectors 110. In an embodiment, the one or more pre-lens deflectors 110 are positioned at selected locations above the aperture of the objective lens 108. For example, Figure 1 As shown in , one or more pre-lens deflectors 110 may be positioned between the objective lens 108 and the electron beam source 114.

[0022] In an embodiment, the one or more deflectors 104, 110 may be configured for alignment and deflection of the primary beam 101. For example, the one or more deflectors 104, 110 may include one or more electrostatic octopole deflectors. As another example, the one or more deflectors may include one or more electrostatic quadrupole deflectors. As another example, the one or more deflectors may include one or more electrostatic dodecapole deflectors.

[0023] In an embodiment, one or more pre-lens deflectors 110 are configured to perform in-phase or out-of-phase coordinated deflection to maximize the scan field at the sample 112. For example, one or more pre-lens deflectors 110 may be operated in pairs or groups to divide a full scan field (e.g., a main field) into several sub-fields. For example, the deflection system 102 may include one or more upper pre-lens deflectors 110 and one or more lower pre-lens deflectors 110, wherein the one or more upper pre-lens deflectors 110 and the one or more lower pre-lens deflectors 110 are configured to operate in pairs or groups to divide the full scan field into several sub-fields. In this regard, in addition to the deflection signal from one or more pre-lens deflectors 110 (e.g., one or more upper pre-lens deflectors 110 or one or more lower pre-lens deflectors 110), a correction signal may also be applied to offset aberrations of the primary beam 101, including astigmatism and / or misalignment. Such a configuration will be in Figures 2A to 3 Discussed in more detail in .

[0024] The one or more pre-lens deflectors 110 may be formed using one or more silicon micromachining techniques and one or more microelectromechanical (MEMS) materials such as silicon and borosilicate glass.

[0025] The deflection system 102 can be integrated with any type of objective lens 108. For example, the objective lens 108 can include a magnetic objective lens. For example, the objective lens 108 can include a permanent magnetic objective lens. As another example, the objective lens 108 can include an electrostatic objective lens. Permanent magnetic objective lenses are generally discussed in U.S. Patent Application No. 17 / 658,637 filed on April 8, 2022, which is incorporated by reference in its entirety.

[0026] The objective lens 108 may have a small aperture. For example, the objective lens 108 may have an aperture of less than 4 mm. As another example, the objective lens 108 may have an aperture of less than 2 mm. As another example, the objective lens 108 may have an aperture of less than 1 mm. It should be noted that due to the small aperture of the aperture, it may be difficult to insert one or more correction elements into the aperture of the objective lens, therefore, one or more components of the deflection system 102 may be placed below the objective lens 108, which maximizes the scan size of the column 100 to produce a large viewing angle.

[0027] In an embodiment, the deflection system 102 is configured to amplify the deflection of one or more components of the deflection system 102. For example, the post-lens deflector 104 may be configured to amplify the deflection of one or more pre-lens deflectors 110.

[0028] In an embodiment, the deflection system 102 is configured to apply one or more corrections to the primary electron beam 101. For example, the deflection system 102 can be configured to apply one or more corrections to correct for astigmatism. In one example, the one or more pre-lens deflectors 110 can be configured to apply a post-lens correction to correct for astigmatism. In another example, the post-lens deflector 104 can be configured to apply a post-lens correction to correct for astigmatism. In another example, the post-lens micro-optical element 106 can be configured to apply a post-lens correction to correct for astigmatism.

[0029] Figure 2A to 2B Deflection systems 102 and 200 with and without post-lens correction are described respectively. Figure 2A As shown in FIG. 2 , the deflection system 200 may include one or more pre-lens deflectors 202 and an objective lens 204 positioned above the sample 206. In this case, the deflection system 200 cannot apply post-lens correction to correct for field curvature to cause the best focal plane 208 of the primary beam 201 to become a curved field. Figure 2B , in the case where the deflection system 102 is capable of applying post-lens corrections to correct for field curvature, the optimal focal plane of the primary beam 101 is flat rather than curved, thereby ensuring good focus across the portion of the sample 112 inspected by the beam 101. The deflection system 102 may be configured to apply one or more corrections to correct for field curvature, such as Figure 2B In one example, the post-lens deflector 104 can be configured to apply post-lens correction to correct for field curvature. In another example, the post-lens micro-optical element 106 can be configured to apply post-lens correction to correct for field curvature.

[0030] As another example, the deflection system 102 can be configured to apply one or more corrections to correct for the offset. In one example, the post-lens deflector 104 can be configured to apply the offset correction. In another example, the one or more pre-lens deflectors 110 can be configured to apply one or more corrections to correct for the offset. In another example, the post-lens micro-optical element 106 can be configured to apply the offset correction.

[0031] In an embodiment, the deflection system 102 is configured to apply a dynamic focus correction to the primary electron beam 101. For example, the post-lens micro-optical element 106 may be configured to apply a dynamic focus correction to the primary electron beam 101. As another example, the post-lens deflector 104 may be configured to apply a dynamic focus correction to the primary electron beam 101.

[0032] In an embodiment, the deflection system 102 is configured for scanning. For example, one or more pre-lens deflectors 110 can be configured for scanning. As another example, the post-lens deflectors 104 can be configured for scanning. As another example, the post-lens micro-optical elements 106 can be configured for scanning.

[0033] It should be noted that one or more components of the deflection system 102 may be configured to perform scanning, while additional components of the deflection system 102 may be configured to perform additional functions (e.g., scanning, deflection correction, or the like). Figure 3 As shown in , one or more pre-lens deflectors 110 can be configured to shift the position of the primary electron beam 101, while the post-lens micro-optical elements 106 can be configured for scanning.

[0034] like Figure 3 , the position of the beam can be modified by one or more pre-lens deflectors 110 to place a small scan generated by the post-lens micro-optical element 106 within any portion of the main field 303 (e.g., the range of the one or more pre-lens deflectors 110). For example, a small scan of the post-lens micro-optical element 106 can be positioned within a subfield 302 of the main field 303. In this example, the subfield origin position 301 of the beam can be modified by one or more pre-lens deflectors 110 to place the small scan within the subfield 302.

[0035] In an embodiment, the scan may be static or dynamic. For example, when the scan is static, the sample stage may be static (not moving) and the beam may scan the subfield 302 at some offset 301. As another example, when the scan is dynamic, the sample stage may be dynamic (moving) and the scan field may need to track the movement as the defect moves across the main field 303. In this example, the vector position 301 may be configured to track the movement of the sample stage.

[0036] It should be noted that as the beam is scanned across the main field 303, one or more corrections from the post-lens deflector 104 are added.

[0037] In an embodiment, the deflection system 102 is configured to vary the extraction field from the sample 112. For example, the post-lens micro-optical element 106 may be configured to vary the extraction field from the sample. For example, the post-lens micro-optical element 106 may include an extraction control electrode 106 configured to vary the extraction field from the sample.

[0038] In an embodiment, the deflection system 102 may be configured to vary the termination field. For example, the post-lens micro-optical element 106 may be configured to vary the termination field.

[0039] In an embodiment, the deflection system 102 may be configured to vary the focusing element. For example, the post-lens micro-optical element 106 may be configured to vary the focusing element.

[0040] It should be noted that the deflection system 102 can be configured to perform multiple functions simultaneously. For example, the deflection system 102 can be configured to perform scanning, astigmatism correction, offset correction, or field curvature correction simultaneously.

[0041] Reference again Figure 1 The deflection system 102 can be integrated into the micro-electronic light column 100. The micro-electronic light column 100 can be used for multi-column characterization systems (e.g. Figure 5 ). It should be noted that the deflection system 102 can be configured to maximize the scan size of the micro-electronic light column 100 to produce a large viewing angle. It should be noted that the description of various embodiments, components, and operations previously described herein with respect to the deflection system 102 should be interpreted as extending to the micro-photonic light column 100, and vice versa.

[0042] In an embodiment, the micro electron light column 100 includes an electron source 114. The electron source 114 may include an emitter 116. The micro electron light column 100 may include any type of electron source, including but not limited to a field emission gun (FEG). The FEG may include but not limited to a Schottky type emitter, a carbon nanotube emitter, a nanostructured carbon emitter, a Muller type emitter, a Spindt type emitter, or the like.

[0043] In one embodiment, the micro electron light column 100 may include a set of electron optical components 120. The various electron optical components of the micro electron light column 100 may be disposed within a vacuum chamber 118.

[0044] The set of electron optical elements 120 may include, but need not necessarily include, an extraction / collecting lens 122, a beam-limiting aperture 124, and a detector 126. Although Figure 1 A specific electron-optical element configuration is depicted, but it should be noted that this depiction is for illustration only and should not be construed as limiting the scope of the present invention.

[0045] In an embodiment, the detector 126 may be configured to collect secondary and / or backscattered electrons 501 emitted from the surface of the sample 112 in response to the primary electron beam. The detector 126 may include any type of detector known in the art, including but not limited to a photodiode, an avalanche photodiode, a photomultiplier tube, a scintillator, a microchannel plate, or the like.

[0046] In an embodiment, the microelectronic light column 100 is communicatively coupled to a controller. The controller may include, but is not limited to, one or more processors, memory, detector amplifiers and digital converters, one or more component power supplies, and the like. The controller may transmit and / or receive data from any component of the microelectronic light column 100 and store the data in the memory. The one or more processors may be configured to execute program instructions stored on a memory medium (memory). In this regard, the one or more processors of the controller may perform any of the various process steps described in the present invention. For example, the one or more processors of the controller may be configured to determine astigmatism correction. For example, the one or more processors may be configured to determine astigmatism correction based on an analysis function or at least one of a lookup table stored in a memory. As another example, the one or more processors of the controller may be configured to determine focusing correction. For example, the one or more processors may be configured to determine focusing correction based on an analysis function or at least one of a lookup table stored in a memory.

[0047] In an embodiment, the controller is connected to one or more elements of the micro electronic light column 100. For example, the controller may be connected to one or more elements of the deflection system 102, such that the controller may be configured to adjust one or more characteristics of the primary beam via the one or more elements of the deflection system. For example, the controller may be configured to adjust one or more characteristics of the primary beam based on at least one of determining a focus correction or determining an astigmatism correction.

[0048] Figure 4 The description depicts a flow chart of a method or process 400 for applying one or more corrections using the deflection system 102 in accordance with one or more embodiments of the present invention. It should be noted that the steps of the method 400 may be implemented in whole or in part by the deflection system 102. However, it should be further appreciated that the method 400 is not limited to the deflection system 102, as additional or alternative system-level embodiments may perform all or a portion of the steps of the method 400.

[0049] In step 402 , an electron beam source may be used to generate a primary electron beam. For example, the electron beam source 114 may be configured to generate the electron beam 101 and direct the primary electron beam 101 to the sample 112 .

[0050] In step 404, a micro electron optical column may be used to direct the primary electron beam to the sample 112. For example, the micro electron optical column 100 may include a set of electron optical elements 120 configured to receive the primary electron beam 101 and direct the primary electron beam 101 to the sample 112. The set of electron optical elements 120 may include any electron optical elements known in the art, including but not limited to beam limiting apertures, deflectors, electron optical lenses, focusing lenses (such as magnetic focusing lenses), objective lenses (such as magnetic objective lenses or electrostatic objective lenses), and the like.

[0051] In step 406, one or more pre-lens deflectors may be used to adjust one or more characteristics of the primary electron beam. For example, the one or more pre-lens deflectors 110 may be configured to apply one or more dynamic focus corrections to the primary electron beam 101.

[0052] In step 408, a post-lens deflector may be used to adjust one or more characteristics of the primary electron beam. For example, the post-lens deflector 104 may be configured to amplify the deflection of one or more pre-lens deflectors 110. As another example, the post-lens deflector 104 may be configured to apply one or more corrections to the primary electron beam 101. In one example, the post-lens deflector 104 may be configured to apply one or more corrections to the primary electron beam 101 to correct for astigmatism. In another example, the post-lens deflector 104 may be configured to apply one or more corrections to the primary electron beam 101 to correct for field curvature. In another example, the post-lens deflector 104 may be configured to apply one or more corrections to the primary electron beam 101 to correct for offset.

[0053] In step 410, post-lens micro-optics may be used to adjust one or more characteristics of the primary electron beam. For example, the post-lens micro-optics 106 may be configured to vary the extraction field from the sample 112.

[0054] Figure 5 A simplified schematic block diagram illustrating a multi-column characterization system 500 of an integrated deflection system 102 in accordance with one or more embodiments of the present invention. It should be noted that the descriptions of various embodiments, components, and operations previously described herein with respect to the deflection system 102 and the electron column 100 should be interpreted as extending to the multi-column characterization system 500, and vice versa.

[0055] like Figure 5 , the deflection system 102 may be integrated within a characterization system 500. It should be noted that the characterization system 500 may include, but is not limited to, an inspection system or a metrology system. For purposes of the present invention, it should be noted that the characterization system 500 may be referred to as a characterization tool. Likewise, a metrology system may be referred to as a metrology tool and an inspection system may be referred to as an inspection tool.

[0056] In an embodiment, Figure 5, the characterization system 500 is a multi-column characterization system 500. In this embodiment, the multi-column characterization system 500 may include a plurality of micro-electron optical columns 100 (e.g., micro-columns), wherein each micro-electron optical column 100 includes a deflection system 102. For example, the multi-column characterization system 500 may include a first micro-electron optical column, a second micro-electron optical column, a third micro-electron optical column, and up to N micro-electron optical columns. Multi-column electron beam characterization systems are generally discussed in U.S. Patent No. 10,545,099, entitled “Ultra-High Sensitivity Hybrid Inspection with Full Wafer Coverage Capability,” issued on January 28, 2020, the entirety of which is incorporated by reference. Multi-column electron beam characterization systems are generally discussed in U.S. Patent Application No. 17 / 658,637, filed on April 8, 2022, the entirety of which is incorporated by reference.

[0057] although Figure 5 A specific electron light column configuration is depicted, but it should be noted that this depiction is for illustration only and should not be construed as limiting the scope of the present invention. System 500 may include any number of electron columns 100 integrating a deflection system 102. For example, system 500 may include a single column 100 integrating a single deflection system 102.

[0058] The sample 112 may include any sample known in the art, including but not limited to a photomask, a reticle, a wafer, or the like. As used in the present invention, the term "wafer" refers to a substrate formed of semiconductor and / or non-semiconductor materials. For example, in the case of semiconductor materials, the wafer may be formed of but not limited to single crystal silicon, gallium arsenide, and / or indium phosphide. Thus, the term "wafer" and the term "sample" may be used interchangeably in the present invention. Therefore, the above description should not be interpreted as limiting the scope of the present invention, but is for illustration only.

[0059] All methods described herein may include storing the result of one or more steps of method embodiments in a memory. The result may include any of the results described herein and may be stored in any manner known in the art. The memory may include any memory described herein or any other suitable storage media known in the art. After storing the result, the result may be accessed in the memory and used by any of the methods or system embodiments described herein, formatted for display to a user, used by another software module, method or system, and the like. In addition, the result may be stored "permanently", "semi-permanently", "temporarily" or within a certain period of time. For example, the memory may be a random access memory (RAM) and the result may not necessarily remain in the memory indefinitely.

[0060] It is further contemplated that each of the above method embodiments may include any other steps of any other method(s) described herein. In addition, each of the above method embodiments may be performed by any of the systems described herein.

[0061] Those skilled in the art will recognize that, for conceptual clarity, the components, operations, devices, objects, and accompanying discussions described herein are used as examples, and various configuration modifications are contemplated. Therefore, as used herein, the specific examples and accompanying discussions set forth are intended to represent their more general class. In general, the use of any specific example is intended to represent its class, and the non-inclusion of specific components, operations, devices, and objects should not be considered limiting.

[0062] As used herein, directional terms such as "top", "bottom", "above", "below", "up", "upward", "down", "below", and "downward" are intended to provide relative positions for descriptive purposes and are not intended to specify an absolute reference system. Various modifications to the described embodiments will be apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments.

[0063] With respect to the use of substantially any plural and / or singular terms herein, those skilled in the art may translate from the plural to the singular and / or from the singular to the plural, depending on the context and / or application. For clarity, the various singular / plural arrangements are not explicitly set forth herein.

[0064] The objectives described herein sometimes illustrate different components contained in other components or connected to other elements. It should be understood that such depiction architecture is only for illustration and in fact many other architectures that realize the same functionality can be implemented. In a conceptual sense, any arrangement of components for realizing the same functionality is effectively "associated" to realize the desired functionality. Therefore, any two components combined to realize a specific functionality herein can be considered to be "associated" with each other to realize the desired functionality, regardless of the architecture or intermediate components. Similarly, any two components so associated can be considered to be "connected" or "coupled" to each other to realize the desired functionality, and any two components that can be so associated can also be considered to be "coupleable" to each other to realize the desired functionality. The specific examples of "coupleable" include but are not limited to physically matching and / or physically interacting components and / or wirelessly interacting and / or wirelessly interacting components and / or logically interacting and / or logically interacting components.

[0065] In addition, it should be understood that the present invention is defined by the appended claims. It should be understood by those skilled in the art that, in general, the terms used herein and especially in the appended claims (e.g., the body of the appended claims) are generally intended to be "open" terms (e.g., the term "including" should be interpreted as "including but not limited to", the term "having" should be interpreted as "having at least", the term "include" should be interpreted as "including but not limited to", etc.). It should be further understood by those skilled in the art that if a specific number of claim recitations is intended to be introduced, then this intention is to be explicitly stated in the claim, and if there is no such statement, then there is no such intention. For example, as an aid to understanding, the following appended claims may contain the use of the introductory phrases "at least one" and "one or more" to introduce claim recitations. However, the use of such phrases should not be interpreted as implying that the introduction of a claim recitation by the indefinite article "a" limits any particular claim containing such introduced claim recitation to inventions containing only one such recitation, even if the same claim contains the introductory phrases "one or more" or "at least one" and an indefinite article such as "a" (e.g., "a" should generally be interpreted as meaning "at least one" or "one or more"); the same applies to the use of definite articles used to introduce claim recitations. In addition, even if a specific number of introduced claim recitations is explicitly recited, those skilled in the art will recognize that such recitation should generally be interpreted as meaning at least the recited number (e.g., the bare recitation "two recitations" without other modifiers generally means at least two recitations or two or more recitations). Furthermore, in examples where a convention similar to “at least one of A, B, and C, and the like” is used, this construction is generally intended to be what is commonly understood by those skilled in the art (e.g., “a system having at least one of A, B, and C” would include, but is not limited to, systems having only A, only B, only C, both A and B, both A and C, both B and C, and / or both A, B, and C, and the like). In examples where a convention similar to “at least one of A, B, or C, and the like” is used, this construction is generally intended to be what is commonly understood by those skilled in the art (e.g., “a system having at least one of A, B, or C” would include, but is not limited to, systems having only A, only B, only C, both A and B, both A and C, both B and C, and / or both A, B, and C, and the like). Those skilled in the art will further understand that virtually any disjunctive term and / or phrase presenting two or more alternatives, whether in the [Detailed Description], claims, or drawings, should be understood to contemplate the possibility of including one of the terms, either of the terms, or both of the terms. For example, the phrase "A or B" should be understood to include the possibilities of "A" or "B" or "A and B."

[0066] It is believed that the present invention and many of its attendant advantages will be understood from the foregoing description, and it will be appreciated that various changes may be made to the form, construction and arrangement of components without departing from the disclosed objects or sacrificing all of its material advantages. The forms described are for illustration only and the following claims are intended to cover and encompass such changes. Furthermore, it should be understood that the present invention is defined by the appended claims.

Claims

1. A micro electronic light column device with a large viewing angle, comprising: A set of electron optical elements configured to direct a primary electron beam of an electron beam source to a sample, the set of electron optical elements comprising: objective lens; and A deflection subsystem, comprising: one or more pre-lens deflectors positioned between the electron beam source and the objective lens; a post-lens deflector positioned between the objective lens and the sample; and A post-lens micro-optical element is positioned between the objective lens and the sample.

2. The micro electronic light column apparatus of claim 1, wherein the post-lens deflector is configured to amplify the deflection of the one or more pre-lens deflectors positioned between the electron beam source and the objective lens.

3. The microelectronic light column apparatus of claim 1, wherein the post-lens deflector is configured to apply one or more corrections to the primary electron beam.

4. The microelectronic light column apparatus of claim 3, wherein the one or more corrections are configured to correct for at least one of: Astigmatism, field curvature or offset.

5. The microelectronic light column apparatus of claim 1, wherein the post-lens deflector is configured to apply one or more dynamic focus corrections to the primary electron beam.

6. The microelectronic light column apparatus of claim 1, wherein the post-lens deflector is configured for scanning.

7. The microelectronic light column apparatus of claim 1, wherein the post-lens deflector comprises a silicon post-lens deflector.

8. The micro-electron light column apparatus of claim 1, wherein the post-lens micro-optical element is configured to apply one or more corrections to the primary electron beam.

9. The microelectronic light column apparatus of claim 8, wherein the one or more corrections are configured to correct for at least one of: Astigmatism, field curvature or offset.

10. The micro-electronic light column apparatus of claim 1, wherein the post-lens micro-optical element is configured to apply one or more dynamic focus corrections to the primary electron beam.

11. The micro electronic light column apparatus of claim 1, wherein the post-lens micro optical element is configured for scanning.

12. The microelectronic light column apparatus of claim 1, wherein the post-lens micro-optical element is configured to vary an extracted field from the sample.

13. The microelectronic light column apparatus of claim 1, wherein the post-lens micro-optical element is configured to vary a termination field.

14. The micro electronic light column apparatus of claim 1, wherein the post-lens micro optical element is configured to vary a focusing element.

15. The micro electronic light column device of claim 1, wherein the post-lens micro optical element is formed of silicon.

16. The microelectronic light column apparatus of claim 1, wherein the post-lens micro-optical element comprises a post-lens detector.

17. The microelectronic light column apparatus of claim 1, wherein the post-lens micro-optical element comprises an extraction control electrode.

18. The microelectronic light column apparatus of claim 1, wherein the post-lens micro-optical element comprises a shield electrode.

19. The micro electronic light column apparatus of claim 1, wherein the post-lens micro-optical element comprises an additional post-lens deflector.

20. The microelectronic light column apparatus of claim 1, wherein the post-lens micro-optical element comprises an electrostatic lens.

21. The microelectronic light column apparatus of claim 1, wherein the one or more pre-lens deflectors are configured to apply one or more corrections to the primary electron beam.

22. The microelectronic light column apparatus of claim 21, wherein the one or more corrections are configured to correct for at least one of: Astigmatism or offset.

23. The microelectronic light column apparatus of claim 1, wherein the one or more pre-lens deflectors are configured for scanning.

24. The microelectronic light column apparatus of claim 1, wherein the one or more pre-lens deflectors comprise one or more silicon pre-lens deflectors.

25. The microelectronic light column device of claim 1, wherein the objective lens has an aperture of less than 4 mm.

26. The microelectronic light column device of claim 25, wherein the objective lens has an aperture of less than 2 mm.

27. The microelectronic light column device of claim 26, wherein the objective lens has an aperture of less than 1 mm.

28. A multi-column characterization system comprising: one or more electron beam sources configured to generate an array of primary electron beams; A plurality of micro electronic light columns, each of the plurality of micro electronic light columns comprising: a set of electron optical elements configured to direct the primary electron beam to the sample, the set of electron optical elements comprising: objective lens; and A deflection subsystem, comprising: one or more pre-lens deflectors positioned between the electron beam source and the objective lens; a post-lens deflector positioned between the objective lens and the sample; and A post-lens micro-optical element is positioned between the objective lens and the sample.

29. The multi-column characterization system of claim 28, wherein the post-lens deflector is configured to amplify the deflection of the one or more pre-lens deflectors positioned between the electron beam source and the objective lens.

30. The multi-column characterization system of claim 28, wherein the post-lens deflector is configured to apply one or more corrections to the primary electron beam.

31. The multi-column characterization system of claim 30, wherein the one or more corrections are configured to correct for at least one of: Astigmatism, field curvature or offset.

32. The multi-column characterization system of claim 28, wherein the post-lens deflector is configured to apply one or more dynamic focus corrections to the primary electron beam.

33. The multi-column characterization system of claim 28, wherein the post-lens deflector is configured for scanning.

34. The multi-post characterization system of claim 28, wherein the post-lens deflector comprises a silicon post-lens deflector.

35. The multi-column characterization system of claim 28, wherein the post-lens micro-optical element is configured to apply one or more corrections to the primary electron beam.

36. The multi-column characterization system of claim 35, wherein the one or more corrections are configured to correct for at least one of: Astigmatism, field curvature or offset.

37. The multi-column characterization system of claim 28, wherein the post-lens micro-optical element is configured to apply one or more dynamic focus corrections to the primary electron beam.

38. The multi-post characterization system of claim 28, wherein the post-lens micro-optical elements are configured for scanning.

39. The multi-post characterization system of claim 28, wherein the post-lens micro-optical elements are configured to vary an extracted field from the sample.

40. The multi-post characterization system of claim 28, wherein the post-lens micro-optical elements are configured to vary a stop field.

41. The multi-post characterization system of claim 28, wherein the post-lens micro-optical elements are configured to vary a focusing element.

42. The multi-post characterization system of claim 28, wherein the post-lens micro-optical elements are formed of silicon.

43. The multi-post characterization system of claim 28, wherein the post-lens micro-optical elements comprise post-lens detectors.

44. The multi-post characterization system of claim 28, wherein the post-lens micro-optical elements comprise extraction control electrodes.

45. The multi-post characterization system of claim 28, wherein the post-lens micro-optical element comprises a shield electrode.

46. ​​The multi-post characterization system of claim 28, wherein the post-lens micro-optical elements include additional post-lens deflectors.

47. The multi-post characterization system of claim 28, wherein the post-lens micro-optical elements comprise electrostatic lenses.

48. The multi-column characterization system of claim 28, wherein the one or more pre-lens deflectors are configured to apply one or more corrections to the primary electron beam.

49. The multi-column characterization system of claim 48, wherein the one or more corrections are configured to correct for at least one of: Astigmatism or offset.

50. The multi-column characterization system of claim 28, wherein the one or more pre-lens deflectors are configured for scanning.

51. The multi-post characterization system of claim 28, wherein the one or more pre-lens deflectors comprise one or more silicon pre-lens deflectors.

52. The multi-column characterization system of claim 28, wherein the objective lens has an aperture of less than 4 mm.

53. The multi-column characterization system of claim 52, wherein the objective lens has an aperture of less than 2 mm.

54. The multi-column characterization system of claim 53, wherein the objective lens has an aperture of less than 1 mm.

55. A method comprising: Using an electron beam source to generate a primary electron beam; Using a micro electron beam to direct the primary electron beam to the sample; adjusting one or more characteristics of the primary electron beam using one or more pre-lens deflectors positioned between the electron beam source and an objective lens of the micro electron light column; adjusting one or more characteristics of the primary electron beam using a post-lens deflector positioned below the objective lens of the micro electron light column; and One or more characteristics of the primary electron beam are adjusted using post-lens micro-optical elements positioned below the objective lens of the micro-electron optical column.

56. The method of claim 55, wherein said adjusting one or more characteristics of said primary electron beam using a post-lens deflector positioned below an objective lens of said micro-electron light column comprises: Amplifying the deflection of the one or more pre-lens deflectors positioned between the electron beam source and the objective lens.

57. The method of claim 55, wherein said adjusting one or more characteristics of said primary electron beam using a post-lens deflector positioned below an objective lens of said micro-electron light column comprises: One or more corrections are applied to the primary electron beam.

58. The method of claim 57, wherein the one or more corrections are configured to correct at least one of: Astigmatism, field curvature or offset.

59. The method of claim 55, wherein said adjusting one or more characteristics of said primary electron beam using a post-lens deflector positioned below an objective lens of said micro-electron light column comprises: One or more dynamic focus corrections are applied to the primary electron beam.

60. The method of claim 55, wherein said adjusting one or more characteristics of said primary electron beam using a post-lens deflector positioned below an objective lens of said micro-electron light column comprises scanning.

61. The method of claim 55, wherein said adjusting one or more characteristics of said primary electron beam using a post-lens micro-optical element positioned below said objective lens of said micro-electron light column comprises: One or more corrections are applied to the primary electron beam.

62. The method of claim 61 , wherein the one or more corrections are configured to correct at least one of: Astigmatism, field curvature or offset.

63. The method of claim 55, wherein said adjusting one or more characteristics of said primary electron beam using a post-lens micro-optical element positioned below said objective lens of said micro-electron light column comprises: One or more dynamic focus corrections are applied to the primary electron beam.

64. The method of claim 55, wherein said adjusting one or more characteristics of said primary electron beam using a post-lens micro-optical element positioned below said objective lens of said micro-electron optical column comprises scanning.

65. The method of claim 55, wherein said adjusting one or more characteristics of said primary electron beam using a post-lens micro-optical element positioned below said objective lens of said micro-electron light column comprises: An extraction field from the sample is varied.

66. The method of claim 55, wherein said adjusting one or more characteristics of said primary electron beam using a post-lens micro-optical element positioned below said objective lens of said micro-electron light column comprises: Change the termination field.

67. The method of claim 55, wherein said adjusting one or more characteristics of said primary electron beam using a post-lens micro-optical element positioned below said objective lens of said micro-electron light column comprises: Make the focusing element change.

68. The method of claim 55, wherein said adjusting one or more characteristics of said primary electron beam using one or more pre-lens deflectors positioned above an objective lens of said micro-electron light column comprises: One or more corrections are applied to the primary electron beam.

69. The method of claim 68, wherein the one or more corrections are configured to correct at least one of: Astigmatism or offset.

70. The method of claim 55, wherein said adjusting one or more characteristics of said primary electron beam using one or more pre-lens deflectors positioned above an objective lens of said micro-electron light column comprises scanning.

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