Preparation method of hollow structure in semiconductor device

Abstract

The invention discloses a preparation method of a hollow structure in a semiconductor device, which is applied to the field of semiconductor preparation, and comprises the following steps: selecting a bonding surface of a bearing slide and / or a bonding surface of the semiconductor device as a to-be-processed bonding surface; initial bonding glue is prepared on the to-be-processed bonding surface, the bearing slide and the semiconductor device are connected in a bonding mode through the initial bonding glue, and all the initial bonding glue serves as final bonding glue; at least part of the final bonding glue is softened when the bonding device is subjected to de-bonding treatment, and the hollow structure prepared in the semiconductor device is not in contact with the softened final bonding glue part; preparing a hollow structure; and carrying out de-bonding processing on the bonding device. According to the method, the final bonding glue is at least partially softened when the bonding device is subjected to the de-bonding treatment, and the prepared hollow structure is not in contact with the softened part in the final bonding glue, so that the softened final bonding glue can be prevented from driving the hollow structure to move, and the preparation yield of the semiconductor device is improved.

Description

Technical Field

[0001] The invention relates to the field of semiconductor preparation, and in particular to a method for preparing a hollow structure in a semiconductor device. Background Art

[0002] Taking micromechanical pressure sensors as an example, microelectromechanical systems (MEMS) are widely used in intelligent systems and other fields. Compared with microelectronics, MEMS adds mechanical structures at the micro-nano scale. Currently, MEMS devices basically have movable structures, and in many cases, they are hollow structures that penetrate the wafer. This structure often requires a temporary bonding process to be implemented during processing. For the hot slip debonding method in the temporary bonding process, the bonding glue is softened and flowed by heating, and a parallel force is applied to make the device wafer and the carrier slide parallel to each other to complete the debonding. However, when the hot slip debonding method is used to process the hollow structure in MEMS, the sliding method will cause the softened bonding glue to drive the hollow structure to move along the sliding direction. Once this movement exceeds the limit of the hollow structure, the hollow structure will break, resulting in chip failure, and then causing the wafer to be scrapped or the wafer yield to decrease.

[0003] Therefore, how to provide a method to avoid slipping in the hot slip debonding process so that the softened bonding adhesive drives the hollow structure in the device to move along the slip direction is a technical problem that technical personnel in this field urgently need to solve. Summary of the invention

[0004] In view of this, the purpose of the present invention is to provide a method for preparing a hollow structure in a semiconductor device, which solves the problem that when the hollow structure is processed in MEMS by the thermal slip debonding method in the prior art, the slipping method will cause the softened bonding glue to drive the hollow structure to move along the slip direction, which may easily lead to chip failure, and then cause the wafer to be scrapped or the wafer yield to decrease.

[0005] In order to solve the above technical problems, the present invention provides a method for preparing a hollow structure in a semiconductor device, comprising:

[0006] Providing a carrier wafer and a semiconductor device, and selecting a bonding surface of the carrier wafer and / or a bonding surface of the semiconductor device as a bonding surface to be processed;

[0007] An initial bonding adhesive is prepared on the bonding surface to be processed, and the carrier wafer and the semiconductor device are bonded and connected by using the initial bonding adhesive to obtain a bonded device, and all of the initial bonding adhesive between the carrier wafer and the semiconductor device is used as a final bonding adhesive; at least a portion of the final bonding adhesive is softened when the bonded device is debonded, and the hollow structure prepared in the semiconductor device has no contact with the portion of the final bonding adhesive that is softened when the bonded device is debonded;

[0008] Processing the semiconductor device to prepare the hollow structure in the semiconductor device;

[0009] The bonded device is debonded by using a thermal slip debonding process to complete the preparation of the hollow structure in the semiconductor device.

[0010] Optionally, the final bonding adhesive includes a first sub-bonding adhesive layer and a second sub-bonding adhesive layer stacked along a preset direction, and the softening temperature of the first sub-bonding adhesive layer is lower than the softening temperature of the second sub-bonding adhesive layer; the preset direction is the direction from the bonding surface of the carrier wafer to the bonding surface of the semiconductor device.

[0011] Optionally, the bonding surface of the carrier wafer and the bonding surface of the semiconductor device are both selected as the bonding surface to be processed;

[0012] Accordingly, an initial bonding adhesive is prepared on the bonding surface to be processed, and the carrier wafer and the semiconductor device are bonded and connected by using the initial bonding adhesive to obtain a bonded device, including:

[0013] Preparing the first sub-bonding adhesive layer on the bonding surface of the carrier wafer;

[0014] Preparing the second sub-bonding adhesive layer on the bonding surface of the semiconductor device;

[0015] The carrier wafer and the semiconductor device are bonded and connected by using the first sub-bonding adhesive layer and the second sub-bonding adhesive layer to obtain the bonded device.

[0016] Optionally, after preparing the second sub-bonding adhesive layer on the bonding surface of the semiconductor device and before bonding the carrier wafer and the semiconductor device using the first sub-bonding adhesive layer and the second sub-bonding adhesive layer, the method further includes:

[0017] Performing a patterning process on the second sub-bonding adhesive layer so that the second sub-bonding adhesive layer forms a through-hole structure corresponding to the semiconductor device along the preset direction, thereby obtaining a patterned second sub-bonding adhesive layer;

[0018] Correspondingly, the carrier wafer and the semiconductor device are bonded and connected by using the first sub-bonding adhesive layer and the second sub-bonding adhesive layer to obtain the bonded device, including:

[0019] The carrier wafer and the semiconductor device are bonded and connected by using the first sub-bonding adhesive layer and the patterned second sub-bonding adhesive layer to obtain the bonded device.

[0020] Optionally, the second sub-bonding adhesive layer is patterned so that the second sub-bonding adhesive layer forms a through-hole structure corresponding to the semiconductor device along the preset direction to obtain a patterned second sub-bonding adhesive layer, including:

[0021] Performing photolithography on the second sub-bonding adhesive layer until the through-hole structure is formed in the second sub-bonding adhesive layer to obtain the patterned second sub-bonding adhesive layer; the second sub-bonding adhesive layer is a photosensitive adhesive layer;

[0022] Or, a patterned photoresist is prepared on the surface of the second sub-bonding adhesive layer; the patterned photoresist is a patterned structure formed along the preset direction corresponding to the semiconductor device to expose the second sub-bonding adhesive layer;

[0023] The second sub-bonding adhesive layer exposed by the patterned photoresist is etched along the preset direction until the through-hole structure is formed in the second sub-bonding adhesive layer to obtain the patterned second sub-bonding adhesive layer.

[0024] Optionally, the bonding surface of the carrier wafer is selected as the bonding surface to be processed;

[0025] Accordingly, an initial bonding adhesive is prepared on the bonding surface to be processed, and the carrier wafer and the semiconductor device are bonded and connected by using the initial bonding adhesive to obtain a bonded device, including:

[0026] Sequentially preparing the first sub-bonding adhesive layer and the second sub-bonding adhesive layer on the bonding surface of the carrier wafer;

[0027] Preparing a through-hole structure formed along the preset direction corresponding to the semiconductor device in the second sub-bonding adhesive layer to obtain a patterned second sub-bonding adhesive layer;

[0028] The carrier wafer and the semiconductor device are bonded and connected by using the first sub-bonding adhesive layer and the patterned second sub-bonding adhesive layer to obtain the bonded device.

[0029] Optionally, the final bonding adhesive is close to the surface of the semiconductor device, and an opening structure is formed corresponding to the semiconductor device.

[0030] The present invention also provides a semiconductor bonding device with a hollow structure to be prepared, comprising:

[0031] A carrier wafer, a final bonding adhesive and a semiconductor device are sequentially stacked;

[0032] At least a portion of the final bonding glue softens when the bonding device is debonded, and the hollow structure prepared in the semiconductor device has no contact with the portion of the final bonding glue that softens when the bonding device is debonded.

[0033] Optionally, the final bonding adhesive includes a first sub-bonding adhesive layer and a second sub-bonding adhesive layer arranged along a direction from the carrier wafer to the semiconductor device, and the softening temperature of the first sub-bonding adhesive layer is lower than the softening temperature of the second sub-bonding adhesive layer.

[0034] Optionally, the final bonding adhesive includes the first sub-bonding adhesive layer and the second sub-bonding adhesive layer;

[0035] A through hole structure is formed in the second sub-bonding adhesive layer corresponding to the semiconductor device along the stacking direction.

[0036] It can be seen that the method for preparing a hollow structure in a semiconductor device provided by the present invention includes providing a carrier wafer and a semiconductor device, selecting the bonding surface of the carrier wafer and / or the bonding surface of the semiconductor device as the bonding surface to be processed, preparing an initial bonding glue on the bonding surface to be processed, and using the initial bonding glue to bond the carrier wafer and the semiconductor device to obtain a bonded device, and using all the initial bonding glue between the carrier wafer and the semiconductor device as the final bonding glue, at least a portion of the final bonding glue softens when the bonded device is debonded, the hollow structure prepared in the semiconductor device has no contact with the portion of the final bonding glue that softens when the bonded device is debonded, processing the semiconductor device to prepare the hollow structure in the semiconductor device, debonding the bonded device using a thermal slip debonding process, and completing the preparation of the hollow structure in the semiconductor device. The present invention sets the above-mentioned final bonding glue to be at least partially softened when the bonded device is debonded, and the hollow structure prepared in the semiconductor device has no contact with the softened part of the final bonding glue, which can avoid the softened final bonding glue driving the hollow structure to move when the bonded device is subjected to thermal sliding debonding treatment, thereby improving the convenience of debonding the carrier and the semiconductor device, and improving the yield rate of semiconductor device preparation.

[0037] In addition, the present invention also provides a semiconductor bonding device with a hollow structure to be prepared, which also has the above-mentioned beneficial effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0039] Figure 1 A flow chart of a method for preparing a hollow structure in a semiconductor device provided by an embodiment of the present invention;

[0040] Figure 2 A flow chart of bonding a carrier wafer and a semiconductor device provided by an embodiment of the present invention;

[0041] Figure 3 Another flow chart for bonding a carrier wafer and a semiconductor device provided by an embodiment of the present invention;

[0042] Figure 4 A flow chart of a method for preparing a hollow structure in a MEMS wafer provided by an embodiment of the present invention;

[0043] Figure 5 A flowchart of a method for preparing a hollow structure in a MEMS wafer provided by an embodiment of the present invention;

[0044] Figure 6 A flow chart of another method for preparing a hollow structure in a MEMS wafer provided by an embodiment of the present invention;

[0045] Figure 7 Another example flow chart of a method for preparing a hollow structure in a MEMS wafer provided by an embodiment of the present invention;

[0046] Figure 8 A schematic structural diagram of a semiconductor bonding device with a hollow structure to be prepared according to an embodiment of the present invention;

[0047] Fig. 9 A schematic structural diagram of another semiconductor bonding device with a hollow structure to be prepared provided in an embodiment of the present invention.

[0048] The following are the descriptions of the reference numerals:

[0049] 1-area where external force is applied, 2-area where heating is performed, 3-final bonding glue, 4-semiconductor device, 10-carrying wafer, 20-bonding glue with lower softening temperature, 21-first sub-bonding glue layer, 30-MEMS wafer, 31-suspended structure, 40-bonding glue with higher softening temperature, 41-cavity structure, 42-second sub-bonding glue layer, 421-through hole structure. DETAILED DESCRIPTION

[0050] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0051] Please refer to Figure 1 , Figure 1 A flow chart of a method for preparing a hollow structure in a semiconductor device provided by an embodiment of the present invention. The method may include:

[0052] S101: providing a carrier wafer and a semiconductor device, and selecting a bonding surface of the carrier wafer and / or a bonding surface of the semiconductor device as a bonding surface to be processed.

[0053] The execution subject of this embodiment is a semiconductor device processing equipment. The purpose of this embodiment is to prepare a hollow structure in a semiconductor device, and the hollow structure is a suspended structure that is not in contact with the rest of the semiconductor device. In this embodiment, the carrier is a component used to carry the semiconductor device so as to facilitate the processing of the semiconductor device. Therefore, it is necessary to bond the carrier to the semiconductor device before processing the semiconductor device to prepare the above-mentioned hollow structure. After the above-mentioned hollow structure is prepared, the carrier and the semiconductor device are debonded to separate the carrier from the semiconductor device. In this embodiment, the bonding surface of the carrier is the surface of the semiconductor device that is close to the carrier when the carrier is bonded to the semiconductor device, and the corresponding bonding surface of the semiconductor device is the surface of the semiconductor device that is close to the carrier when the semiconductor device is bonded to the carrier. In this embodiment, the bonding surface of the carrier and / or the bonding surface of the semiconductor device are set as the bonding surface to be processed, that is, the bonding surface of at least one of the carrier and the semiconductor device can be selected as the bonding surface to be processed. The specific type of the semiconductor device is not limited in this embodiment. For example, the semiconductor device may be a MEMS (micro-electromechanical system) device.

[0054] S102: preparing an initial bonding glue on the bonding surface to be processed, and utilizing the initial bonding glue to bond the carrier wafer and the semiconductor device to obtain a bonded device, and using all the initial bonding glue between the carrier wafer and the semiconductor device as a final bonding glue; at least a portion of the final bonding glue softens when the bonded device is debonded, and the hollow structure prepared in the semiconductor device has no contact with the portion of the final bonding glue that softens when the bonded device is debonded.

[0055] In this embodiment, an initial bonding glue is prepared on the bonding surface to be processed, and the carrier wafer and the semiconductor device are bonded together using the initial bonding glue prepared on the bonding surface to be processed. At this time, all the bonding glue between the carrier wafer and the semiconductor device is used as the final bonding glue. It should be pointed out that when only the bonding surface of the carrier wafer is selected as the bonding surface to be processed, the initial bonding glue is only prepared on the bonding surface of the carrier wafer, and the carrier wafer and the semiconductor device are bonded together using the initial bonding glue. At this time, the initial bonding glue prepared only on the bonding surface of the carrier wafer is the final bonding glue; when only the bonding surface of the semiconductor device is selected as the bonding surface to be processed, the initial bonding glue is only prepared on the bonding surface of the semiconductor device, and the carrier wafer and the semiconductor device are bonded together using the initial bonding glue. At this time, the initial bonding glue prepared only on the bonding surface of the semiconductor device is the final bonding glue; when the bonding surface of the carrier wafer and the bonding surface of the semiconductor device are both selected as the bonding surfaces to be processed, the initial bonding glue is prepared on the bonding surface of the carrier wafer and the bonding surface of the semiconductor device, and the carrier wafer and the semiconductor device are bonded and connected using the prepared initial bonding glue. At this time, the initial bonding glue prepared on the bonding surface of the carrier wafer and the initial bonding glue prepared on the bonding surface of the semiconductor device together constitute the final bonding glue.

[0056] It should be further explained that, in the present embodiment, at least a portion of the final bonding glue is softened when the bonded device is debonded, that is, the softening temperature of at least a portion of the final bonding glue is lower than the processing temperature when the bonded device is debonded. Specifically, the bonded device is debonded by a thermal sliding debonding process. At this time, the softened portion of the final bonding glue is easily deformed by the action of the torque, and then the carrier and the semiconductor device are separated by sliding. Since the softened portion of the final bonding glue is deformed during the thermal sliding debonding process, the hollow structure prepared in the semiconductor device is set to have no contact with the portion of the final bonding glue that is softened when the bonded device is debonded. Therefore, the softened and deformed portion of the final bonding glue will not cause the hollow structure in the semiconductor device to move, thereby ensuring the yield of the hollow structure preparation in the semiconductor device. It should be pointed out that in this embodiment, the final bonding glue can be set to partially soften when the bonded device is debonded, that is, the above-mentioned final bonding glue is composed of a plurality of bonding glues with different softening temperatures. Under the premise of meeting the process requirements, in order to improve the simplicity of preparation, the final bonding glue can be set to be composed of two bonding glues with different softening temperatures, or this embodiment can also be set to fully soften the above-mentioned final bonding glue when the bonded device is debonded, and the corresponding hollow structure in the semiconductor device needs to be set to have no contact with all the final bonding glues. This embodiment does not limit the specific type of the above-mentioned initial bonding glue, as long as it can complete the bonding connection between the carrier and the semiconductor device.

[0057] S103: Processing the semiconductor device to prepare a hollow structure in the semiconductor device.

[0058] It should be noted that the region where the semiconductor device is processed in this embodiment corresponds to the region where the softened portion of the above-mentioned final bonding adhesive is subjected to a debonding process on the bonded device.

[0059] S104: performing a debonding process on the bonded device using a thermal slip debonding process to complete the preparation of the hollow structure in the semiconductor device.

[0060] In this embodiment, after the hollow structure of the semiconductor device is prepared, the above-mentioned bonded device is debonded by using a hot sliding debonding process, which can ensure that the hollow structure will not shift during the debonding process, thereby improving the yield of the hollow structure preparation. In addition, it should be noted that when the above-mentioned final bonding glue is composed of a plurality of bonding glues with different softening temperatures, the temperature of the hot sliding debonding process needs to be set accordingly, which is greater than the softening temperature of the bonding glue part with a low softening temperature in the final bonding glue, and is less than the softening temperature of the bonding glue part with a high softening temperature in the final bonding glue. The hot sliding debonding process is to soften and flow the above-mentioned final bonding glue by heating, and to apply a parallel force so that the semiconductor device and the carrier wafer slide away from each other to complete the debonding. Compared with wet debonding, it is more efficient. Compared with laser debonding, in this embodiment, the carrier wafer can use a silicon wafer, which can avoid the problem of thermal mismatch.

[0061] Furthermore, in order to ensure the simplicity of preparation of the final bonding adhesive, the above-mentioned final bonding adhesive can be arranged to include a first sub-bonding adhesive layer and a second sub-bonding adhesive layer stacked along a preset direction, and the softening temperature of the first sub-bonding adhesive layer is lower than the softening temperature of the second sub-bonding adhesive layer; the preset direction is the direction from the bonding surface of the carrier to the bonding surface of the semiconductor device.

[0062] It should be noted that in the present embodiment, the final bonding adhesive is composed of two bonding adhesives with different softening temperatures, namely a first sub-bonding adhesive layer with a lower softening temperature and a second sub-bonding adhesive layer with a higher softening temperature, and the first sub-bonding adhesive layer and the second sub-bonding adhesive layer are arranged along the above-mentioned preset direction, and the first sub-bonding adhesive layer is arranged on the side away from the semiconductor device to avoid the first sub-bonding adhesive layer from contacting the hollow structure in the semiconductor device while improving the convenience of preparing the final bonding adhesive.

[0063] In the present embodiment, two layers of initial bonding glue with a large difference in softening temperatures are prepared, the carrier wafer is coated with soft glue (the soft glue is a bonding glue with a lower softening temperature) for sliding debonding, and the semiconductor device is coated with hard glue (the hard glue is a bonding glue with a higher softening temperature) to protect the hollow structure from sliding, thereby avoiding damage to the hollow structure during the debonding process and improving the output yield of semiconductor devices.

[0064] Furthermore, in order to improve the convenience of bonding device preparation, reference can be made to Figure 2 , Figure 2 A flow chart of bonding a carrier wafer and a semiconductor device provided by an embodiment of the present invention. Both the bonding surface of the carrier wafer and the bonding surface of the semiconductor device can be selected as the bonding surface to be processed;

[0065] Accordingly, preparing an initial bonding adhesive on the bonding surface to be processed, and using the initial bonding adhesive to bond the carrier wafer and the semiconductor device to obtain a bonded device may include the following steps:

[0066] Step S11: preparing a first sub-bonding adhesive layer on the bonding surface of the carrier wafer;

[0067] Step S12: preparing a second sub-bonding adhesive layer on the bonding surface of the semiconductor device;

[0068] Step S13: using the first sub-bonding adhesive layer and the second sub-bonding adhesive layer to bond the carrier wafer and the semiconductor device to obtain a bonded device.

[0069] In the present embodiment, the first sub-bonding adhesive layer and the second sub-bonding adhesive layer are respectively prepared on the bonding surface of the carrier and the bonding surface of the semiconductor device, which can ensure the preparation efficiency of the initial bonding adhesive and improve the convenience of preparation. The carrier and the semiconductor device are bonded together by the first sub-bonding adhesive layer and the second sub-bonding adhesive layer, which can ensure the stability of the connection between the carrier and the semiconductor device, thereby improving the convenience of preparing the bonded device.

[0070] Further, in order to ensure that the final bonding adhesive prepared does not affect the structural stability of the hollow structure in the semiconductor device when it is removed, and to avoid contamination of the semiconductor device, after preparing the second sub-bonding adhesive layer on the bonding surface of the semiconductor device, before bonding the carrier wafer and the semiconductor device using the first sub-bonding adhesive layer and the second sub-bonding adhesive layer, the following may also be included:

[0071] Performing a patterning process on the second sub-bonding adhesive layer so that the second sub-bonding adhesive layer forms a through-hole structure corresponding to the semiconductor device along a preset direction, thereby obtaining a patterned second sub-bonding adhesive layer;

[0072] Accordingly, the first sub-bonding adhesive layer and the second sub-bonding adhesive layer are used to bond the carrier wafer and the semiconductor device to obtain a bonded device, which may include:

[0073] The carrier wafer and the semiconductor device are bonded and connected by using the first sub-bonding adhesive layer and the patterned second sub-bonding adhesive layer to obtain a bonded device.

[0074] It should be noted that in the present embodiment, the second sub-bonding adhesive layer is graphically processed so that the second sub-bonding adhesive layer forms a through-hole structure along a preset direction corresponding to the semiconductor device. Specifically, the second sub-bonding adhesive layer forms a through-hole structure along a preset direction corresponding to the hollow structure in the semiconductor device. Furthermore, on the basis of setting two initial bonding adhesives with different softening temperatures to facilitate the separation of the carrier and the semiconductor device, the second sub-bonding adhesive layer is not in contact with the above-mentioned hollow structure, thereby further avoiding the bonding adhesive affecting the functionality of the hollow structure.

[0075] Further, in order to ensure that the patterned second sub-bonding adhesive layer is successfully prepared, the second sub-bonding adhesive layer is patterned so that the second sub-bonding adhesive layer forms a through-hole structure corresponding to the semiconductor device along a preset direction to obtain the patterned second sub-bonding adhesive layer, which may include:

[0076] Performing photolithography on the second sub-bonding adhesive layer until a through-hole structure is formed in the second sub-bonding adhesive layer to obtain a patterned second sub-bonding adhesive layer; the second sub-bonding adhesive layer is a photosensitive adhesive layer;

[0077] Or, a patterned photoresist is prepared on the surface of the second sub-bonding adhesive layer; the patterned photoresist is a patterned structure formed along a preset direction corresponding to the semiconductor device to expose the second sub-bonding adhesive layer;

[0078] The second sub-bonding adhesive layer exposed by the patterned photoresist is etched along a preset direction until a through-hole structure is formed in the second sub-bonding adhesive layer to obtain a patterned second sub-bonding adhesive layer.

[0079] It should be noted that, in this embodiment, when the second sub-bonding adhesive layer is a photosensitive adhesive layer, the second sub-bonding adhesive layer can be directly subjected to photolithography processing until a through-hole structure is formed in the second sub-bonding adhesive layer to obtain a patterned second sub-bonding adhesive layer. When the second sub-bonding adhesive layer cannot directly form a through-hole structure by photolithography, it is necessary to prepare a patterned photoresist on the surface of the second sub-bonding adhesive layer, and then etch the second sub-bonding adhesive layer according to the patterned photoresist to form a patterned second sub-bonding adhesive layer.

[0080] Further, in order to ensure that the first sub-bonding adhesive layer and the second sub-bonding adhesive layer are successfully prepared, the preparation of the first sub-bonding adhesive layer on the bonding surface of the carrier wafer may include:

[0081] Spin coating a first sub-bonding adhesive layer material on the bonding surface of the carrier wafer, and performing a heat drying process to obtain a first sub-bonding adhesive layer;

[0082] Accordingly, preparing a second sub-bonding adhesive layer on the bonding surface of the semiconductor device may include:

[0083] The second sub-bonding adhesive layer material is spin-coated on the bonding surface of the semiconductor device, and is subjected to thermal drying treatment to obtain the second sub-bonding adhesive layer.

[0084] Furthermore, in order to ensure the structural stability of the bonded device, the above-mentioned bonding connection between the carrier wafer and the semiconductor device by using the first sub-bonding adhesive layer and the second sub-bonding adhesive layer to obtain the bonded device may include:

[0085] The first sub-bonding adhesive layer and the second sub-bonding adhesive layer are laminated together, and the carrier wafer and the semiconductor device are subjected to heating and pressurization treatments to complete the bonding connection between the carrier wafer and the semiconductor device to obtain a bonded device.

[0086] In this embodiment, the carrier wafer and the semiconductor device are subjected to heating and pressurization treatments so that the first sub-bonding adhesive layer and the second sub-bonding adhesive layer are firmly connected, thereby improving the bonding stability of the bonding device.

[0087] Furthermore, in order to avoid directly processing the semiconductor device and damaging the semiconductor device, reference can be made to Figure 3 , Figure 3 Another flow chart of bonding a carrier wafer and a semiconductor device provided by an embodiment of the present invention. The bonding surface of the carrier wafer can be selected as the bonding surface to be processed;

[0088] Accordingly, preparing an initial bonding adhesive on the bonding surface to be processed, and bonding the carrier wafer and the semiconductor device using the initial bonding adhesive to obtain a bonded device may include:

[0089] Step S21: sequentially preparing a first sub-bonding adhesive layer and a second sub-bonding adhesive layer on the bonding surface of the carrier wafer;

[0090] Step S22: preparing a through-hole structure corresponding to the semiconductor device in a preset direction in the second sub-bonding adhesive layer to obtain a patterned second sub-bonding adhesive layer;

[0091] Step S23: using the first sub-bonding adhesive layer and the patterned second sub-bonding adhesive layer to bond the carrier wafer and the semiconductor device to obtain a bonded device.

[0092] It should be noted that in this embodiment, only the bonding surface of the carrier wafer is used as the bonding surface to be processed, and the first sub-bonding adhesive layer and the second sub-bonding adhesive layer are both prepared on the bonding surface of the carrier wafer to avoid the processing steps from affecting the semiconductor device.

[0093] Furthermore, in order to completely prevent the final bonding adhesive from affecting the hollow structure in the semiconductor device, the final bonding adhesive may be arranged close to the surface of the semiconductor device, and an opening structure is formed corresponding to the semiconductor device.

[0094] It should be noted that in this embodiment, an opening structure is provided on the surface of the final bonding glue close to the semiconductor device, and the opening structure corresponds to the hollow structure provided in the semiconductor device, so that the final bonding glue is prevented from contacting with the hollow structure in the semiconductor device through the opening structure provided on the surface of the final bonding glue close to the semiconductor device, so as to avoid the hollow structure from moving during the debonding process. The opening structure provided in this embodiment can be provided as a groove structure, or can be provided as a through-hole structure, as long as the final bonding glue is prevented from contacting with the hollow structure in the semiconductor device. This embodiment provides a temporary bonding glue structure that can be graphed, and the opening structure provided allows the final bonding glue to avoid the hollow structure, thereby preventing the hollow structure from being damaged during the debonding process, and improving the output yield of semiconductor devices.

[0095] A method for preparing a hollow structure in a semiconductor device provided by an embodiment of the present invention includes providing a carrier wafer and a semiconductor device, selecting a bonding surface of the carrier wafer and / or a bonding surface of the semiconductor device as a bonding surface to be processed, preparing an initial bonding glue on the bonding surface to be processed, and using the initial bonding glue to bond the carrier wafer and the semiconductor device to obtain a bonded device, and using all the initial bonding glue between the carrier wafer and the semiconductor device as a final bonding glue, at least a portion of the final bonding glue softens when the bonded device is debonded, and the hollow structure prepared in the semiconductor device has no contact with the portion of the final bonding glue that softens when the bonded device is debonded, processing the semiconductor device to prepare the hollow structure in the semiconductor device, debonding the bonded device using a thermal slip debonding process, and completing the preparation of the hollow structure in the semiconductor device. The present invention sets the above-mentioned final bonding glue to be at least partially softened when the bonded device is debonded, and the hollow structure prepared in the semiconductor device has no contact with the softened part of the final bonding glue, which can avoid the softened final bonding glue driving the hollow structure to move when the bonded device is subjected to thermal sliding debonding treatment, thereby improving the convenience of debonding the carrier and the semiconductor device, and improving the yield rate of semiconductor device preparation.

[0096] In addition, in an embodiment of the present invention, the final bonding adhesive is configured to consist of a first sub-bonding adhesive layer with a lower softening temperature and a second sub-bonding adhesive layer with a higher softening temperature, and the first sub-bonding adhesive layer and the second sub-bonding adhesive layer are arranged along the above-mentioned preset direction, and the first sub-bonding adhesive layer is arranged on a side away from the semiconductor device to avoid the first sub-bonding adhesive layer from contacting the hollow structure in the semiconductor device, and to avoid the first sub-bonding adhesive layer that softens first during the debonding process from deforming and driving the hollow structure to move, thereby improving the convenience of preparing the final bonding adhesive; by respectively bonding the substrate on the bonding surface of the carrier and the semiconductor device The bonding surface of the semiconductor device is formed by preparing the first sub-bonding adhesive layer and the second sub-bonding adhesive layer in correspondence, which can ensure the preparation efficiency of the initial bonding adhesive and improve the convenience of preparation. The first sub-bonding adhesive layer and the second sub-bonding adhesive layer are used to bond the carrier wafer and the semiconductor device, which can ensure the stability of the connection between the carrier wafer and the semiconductor device, thereby improving the convenience of preparing the bonded device. The second sub-bonding adhesive layer is patterned so that the second sub-bonding adhesive layer forms a through-hole structure along a preset direction corresponding to the hollow structure in the semiconductor device, and then two initial bonding adhesives with different softening temperatures are set to facilitate the carrier wafer to be bonded to the semiconductor device. On the basis of the separation of the carrier wafer and the semiconductor device, the second sub-bonding adhesive layer is made to have no contact with the above-mentioned hollow structure, so as to further avoid the bonding adhesive affecting the functionality of the hollow structure; when the second sub-bonding adhesive layer is a photosensitive adhesive layer, the second sub-bonding adhesive layer is directly subjected to photolithography, and when the second sub-bonding adhesive layer cannot directly form a through-hole structure by photolithography, it is necessary to prepare a patterned photoresist on the surface of the second sub-bonding adhesive layer, and then etch the second sub-bonding adhesive layer according to the patterned photoresist to ensure that the patterned second sub-bonding adhesive layer is successfully prepared; by heating the carrier wafer and the semiconductor device The first sub-bonding adhesive layer and the second sub-bonding adhesive layer are processed and pressurized to firmly connect the first sub-bonding adhesive layer and the second sub-bonding adhesive layer, thereby improving the bonding stability of the bonding device; only the bonding surface of the carrier wafer is used as the bonding surface to be processed, and the first sub-bonding adhesive layer and the second sub-bonding adhesive layer are prepared on the bonding surface of the carrier wafer, thereby avoiding the processing procedure from affecting the semiconductor device; by arranging an opening structure corresponding to the hollow structure arranged in the semiconductor device on the surface of the final bonding adhesive close to the semiconductor device, the final bonding adhesive is prevented from contacting the hollow structure in the semiconductor device, so as to avoid the hollow structure from moving when the debonding process is performed.

[0097] In a feasible embodiment, the semiconductor device is configured as a MEMS device, and the preparation method of the corresponding hollow structure in the MEMS wafer 30 can refer to Figure 4 , Figure 4 A flowchart of a method for preparing a hollow structure in a MEMS wafer provided by an embodiment of the present invention. Specifically, the method may include the following steps:

[0098] Step S31: providing a carrier wafer 10 required for temporary bonding.

[0099] The carrier plate 10 may be a silicon carrier plate, a quartz carrier plate, a glass carrier plate, etc. The thickness of the carrier plate 10 may be set to be between 150 microns and 800 microns. Figure 5 , Figure 5 FIG. 1 is a flow chart of a method for preparing a hollow structure in a MEMS wafer 30 provided in an embodiment of the present invention. Further, step S31 in this embodiment may correspond to reference Figure 5 As shown in (a).

[0100] Step S32: Spin-coat a layer of bonding adhesive 20 with a relatively low softening temperature on the front side of the carrier wafer 10, and use a hot plate or an oven to dry the bonding adhesive 20 with a relatively low softening temperature.

[0101] The bonding glue 20 with a relatively low softening temperature may be a common photoresist or bonding glue, and its softening temperature may be set within a range of 80°C to 150°C, and its thickness may be set within a range of 10 microns to 200 microns. Figure 5 As shown in (b), the bonding adhesive 20 with a relatively low softening temperature corresponds to the first sub-bonding adhesive layer in the above-mentioned preparation method.

[0102] Step S33: providing a MEMS wafer 30, spin-coating a layer of bonding adhesive 40 with a relatively high softening temperature on the back side of the MEMS wafer 30, and drying the bonding adhesive 40 with a relatively high softening temperature by a hot plate or an oven.

[0103] In this embodiment, the MEMS wafer 30 can be a silicon wafer, a quartz wafer, a glass wafer, etc., and the thickness can be set to between 150 microns and 800 microns. The bonding glue 40 with a higher softening temperature can be set to conventional bonding glue, PI (polyimide) glue, SU8 (SU-8 material is a negative epoxy resin type, near-ultraviolet photoresist) glue, etc., and the softening temperature can be set to within the range of 150°C to 250°C, and the thickness can be set to between 10 microns and 200 microns. In this embodiment, step S33 can correspond to reference Figure 5 As shown in (c). In this embodiment, the bonding adhesive 40 with a higher softening temperature is relative to the bonding adhesive 20 with a lower softening temperature, that is, the softening temperature of the bonding adhesive 40 with a higher softening temperature is ensured to be higher than the softening temperature of the bonding adhesive 20 with a lower softening temperature. The bonding adhesive 40 with a higher softening temperature corresponds to the second sub-bonding adhesive layer in the above-mentioned preparation method.

[0104] Step S34: The MEMS wafer 30 is bonded to the carrier substrate 10, the bonding adhesive 20 with a lower softening temperature is in direct contact with the bonding adhesive 40 with a higher softening temperature, and temperature and pressure are applied to the MEMS wafer 30 and the carrier substrate 10 to bond the MEMS wafer 30 and the carrier substrate 10 together to complete temporary bonding.

[0105] The structure prepared in step S34 in this embodiment can correspond to the reference Figure 5 (d). The above-mentioned applicable temperature range can be set to 80°C~250°C, and the applicable pressure can be set to between 0.1kN~1kN;

[0106] Step S35: On the front side of the MEMS wafer 30, conventional MEMS processes such as photolithography and etching are used to form a suspended structure 31 that runs through the MEMS wafer 30 and points from the front side of the MEMS wafer 30 to the back side of the MEMS wafer 30. The specific step S35 may correspond to Figure 5 As shown in (e) in the figure, the suspended structure 31 corresponds to the hollow structure in the above-mentioned preparation method.

[0107] Step S36: Heat the carrier 10 or the MEMS wafer 30 separately, or heat both at the same time, the heating temperature is ≤150°C, within this temperature range, the bonding glue 20 with a lower softening temperature can be softened and produce plastic flow, while the bonding glue 40 with a higher softening temperature can remain non-flowing, and then the carrier 10 and the MEMS wafer 30 are separated by parallel sliding, and the debonding is completed. This step S36 specifically corresponds to reference Figure 5 As shown in (f). Figure 5 As shown in (f), during the debonding process, when the carrier wafer 10 is heated, the specific position can be set as the heating area 2, and when an external force is applied to make the carrier wafer 10 and the MEMS wafer 30 slide parallel to each other, the specific position can be set as the area 1 where the external force is applied.

[0108] Step S37: removing the bonding glue remaining on the surface of the MEMS wafer 30 and the surface of the carrier 10 by dry oxygen or wet organic reagent.

[0109] The structure prepared in step S37 in this embodiment can correspond to the reference Figure 5 (g) After the MEMS wafer 30 is processed with the suspended structure 31 , the carrier plate 10 can be recycled.

[0110] The present invention softens only the bonding glue on the front side of the carrier 10 but does not soften the bonding glue on the back side of the MEMS wafer 30, so that the bonding glue on the back side of the MEMS wafer 30 does not flow during the sliding debonding process, thereby isolating and protecting the suspended structure 31 prepared in the MEMS wafer 30 from being pulled and damaged during the sliding debonding process.

[0111] In another feasible embodiment, the semiconductor device is configured as a MEMS device, and the corresponding method for preparing the hollow structure in the MEMS wafer can refer to Figure 6 , Figure 6 A flowchart of another method for preparing a hollow structure in a MEMS wafer provided by an embodiment of the present invention. Specifically, the following steps may be included:

[0112] Step S41: providing a carrier wafer 10 required for temporary bonding.

[0113] The carrier plate 10 may be a silicon carrier plate, a quartz carrier plate, a glass carrier plate, etc. The thickness of the carrier plate 10 may be set to be between 150 microns and 800 microns. Figure 7 , Figure 7 FIG. 4 is another flow chart of a method for preparing a hollow structure in a MEMS wafer 30 provided in an embodiment of the present invention. Further, step S41 in this embodiment may correspond to reference Figure 7 As shown in (a).

[0114] Step S42: Spin-coat a layer of bonding adhesive 20 with a relatively low softening temperature on the front side of the carrier wafer 10, and use a hot plate or an oven to dry the bonding adhesive 20 with a relatively low softening temperature.

[0115] The bonding glue 20 with a relatively low softening temperature may be a common photoresist or bonding glue, and its softening temperature may be set within a range of 80°C to 150°C, and its thickness may be set within a range of 10 microns to 200 microns. Figure 7 As shown in (b).

[0116] Step S43: providing a MEMS wafer 30, spin-coating a layer of bonding adhesive 40 with a relatively high softening temperature on the back side of the MEMS wafer 30, and drying the bonding adhesive 40 with a relatively high softening temperature by means of a hot plate or an oven.

[0117] The step S43 may correspond to the following Figure 7In this embodiment, the MEMS wafer 30 can be a silicon wafer, a quartz wafer, a glass wafer, etc., and the thickness can be set to between 150 microns and 800 microns. The bonding glue 40 with a relatively high softening temperature can be set to conventional bonding glue, PI glue, SU8 glue, etc., and the softening temperature can be set within the range of 150°C to 250°C, and the thickness can be set to between 10 microns and 200 microns.

[0118] Step S44: Through semiconductor processes such as mask lithography, corrosion / etching, etc., the bonding glue 40 with a higher softening temperature corresponding to the area of ​​the MEMS wafer 30 where the suspended structure 31 needs to be prepared is selectively removed to form a cavity structure 41, and in the contact surface between the cavity structure 41 and the suspended structure 31, the area of ​​the cavity structure 41 is larger than the area of ​​the suspended structure 31.

[0119] The step S44 may correspond to the following Figure 7 As shown in (d), the cavity structure 41 corresponds to the opening structure in the above-mentioned preparation method.

[0120] Step S45: The MEMS wafer 30 is bonded to the carrier substrate 10, the bonding adhesive 20 with a lower softening temperature is in direct contact with the bonding adhesive 40 with a higher softening temperature, and temperature and pressure are applied to the MEMS wafer 30 and the carrier substrate 10 to bond the MEMS wafer 30 and the carrier substrate 10 together to complete temporary bonding.

[0121] The step S45 may correspond to the following Figure 7 As shown in (e), the applicable temperature range can be set to 80°C to 250°C, and the applicable pressure can be set to between 0.1 kN and 1 kN.

[0122] Step S46: On the front side of the MEMS wafer 30, conventional MEMS processes such as photolithography and etching are used to form a suspended structure 31 that runs through the MEMS wafer 30 and points from the front side of the MEMS wafer 30 to the back side of the MEMS wafer 30. This step S46 may correspond to the following steps: Figure 7 As shown in (f).

[0123] Step S47: Heat the carrier 10 or the MEMS wafer 30 separately, or heat both at the same time, the heating temperature is ≤ 150°C, within this temperature range, the bonding glue 20 with a lower softening temperature can be softened and produce plastic flow, while the bonding glue 40 with a higher softening temperature can remain non-flowing, and then the carrier 10 and the MEMS wafer 30 are separated by parallel sliding, and the debonding is completed. This step S47 can correspond to reference such as Figure 7 As shown in (g).

[0124] Step S48: removing the bonding glue remaining on the surface of the MEMS wafer 30 and the surface of the carrier 10 by dry oxygen or wet organic reagent.

[0125] The step S48 may correspond to the following Figure 7 As shown in (h), after the MEMS wafer 30 is processed with the suspended structure 31, the carrier plate 10 can be recycled.

[0126] The present invention softens only the bonding glue on the front side of the carrier 10 but does not soften the bonding glue on the back side of the MEMS wafer 30, so that the bonding glue on the back side of the MEMS wafer 30 does not flow during the sliding debonding process. The bonding glue on the back side of the MEMS wafer 30 has a cavity structure 41, which completely isolates and protects the suspended structure 31 prepared in the MEMS wafer 30 so that it is not pulled and damaged during the sliding debonding process.

[0127] The semiconductor bonding device with a hollow structure to be prepared provided by an embodiment of the present invention is introduced below. The semiconductor bonding device with a hollow structure to be prepared described below and the method for preparing the hollow structure in the semiconductor device described above can be referred to each other.

[0128] Please refer to Figure 8 , Figure 8 A schematic structural diagram of a semiconductor bonding device with a hollow structure to be prepared provided in an embodiment of the present invention may include:

[0129] A carrier wafer 10, a final bonding adhesive 3 and a semiconductor device 4 are stacked in sequence;

[0130] At least part of the final bonding glue 3 is softened when the bonded device is debonded, and the hollow structure prepared in the semiconductor device 4 has no contact with the part of the final bonding glue 3 that is softened when the bonded device is debonded.

[0131] In this embodiment, a semiconductor bonding device with a hollow structure to be prepared is provided, including a carrier wafer 10, a final bonding glue 3 and a semiconductor device 4 stacked in sequence, and at least a portion of the final bonding glue 3 softens when the bonding device is debonded, and the hollow structure prepared in the semiconductor device 4 has no contact with the portion of the final bonding glue 3 softened during the debonding process, so as to avoid the softened portion of the final bonding glue 3 driving the final bonding glue 3 to move when displacement occurs, thereby ensuring the yield rate of the hollow structure prepared subsequently. The semiconductor bonding device with a hollow structure to be prepared provided in this embodiment is a bonding device in which a hollow structure has not yet been prepared in the semiconductor device 4.

[0132] Furthermore, in order to improve the ease of preparation of the semiconductor bonding device with the hollow structure to be prepared while ensuring the yield of the hollow structure preparation, the final bonding glue 3 may include a first sub-bonding glue layer 21 and a second sub-bonding glue layer 42 arranged along the direction of the carrier 10 pointing to the semiconductor device 4, and the softening temperature of the first sub-bonding glue layer 21 is lower than the softening temperature of the second sub-bonding glue layer 42.

[0133] It should be noted that, in the present embodiment, the final bonding adhesive 3 layer is arranged to include a first sub-bonding adhesive layer 21 and a second sub-bonding adhesive layer 42 arranged along the direction of the carrier wafer 10 pointing to the semiconductor device 4, and the softening temperature of the first sub-bonding adhesive layer 21 is lower than the softening temperature of the second sub-bonding adhesive layer 42. This ensures that when the carrier wafer 10 and the semiconductor device 4 are debonded, the first softened sub-bonding adhesive layer 21 has no contact with the hollow structure in the semiconductor device 4, and further, when the first softened sub-bonding adhesive layer 21 is deformed, it will not cause the hollow structure in the semiconductor device 4 to move, and the preparation of the final bonding adhesive 3 is convenient.

[0134] Furthermore, in order to further prevent the final bonding glue 3 from affecting the hollow structure in the semiconductor device 4, reference may be made to Fig. 9 , Fig. 9 A schematic diagram of another semiconductor bonding device with a hollow structure to be prepared according to an embodiment of the present invention. The final bonding adhesive 3 may include a first sub-bonding adhesive layer 21 and a second sub-bonding adhesive layer 42;

[0135] A through hole structure 421 is formed in the second sub-bonding adhesive layer 42 corresponding to the semiconductor device 4 along the stacking direction.

[0136] In the present embodiment, the final bonding glue 3 layer is configured to include a first sub-bonding glue layer 21 with a lower softening temperature and a second sub-bonding glue layer 42 with a higher softening temperature arranged along the direction of the carrier 10 pointing to the semiconductor device 4, and on this basis, the second sub-bonding glue layer 42 is arranged corresponding to the semiconductor device 4 to form a through-hole structure 421 along the stacking direction, which can further avoid the prepared final bonding glue 3 affecting the stability of the hollow structure in the semiconductor device 4 during the debonding process.

[0137] The semiconductor bonding device with a hollow structure to be prepared using the embodiment of the present invention comprises a carrier wafer 10, a final bonding adhesive 3 and a semiconductor device 4 which are stacked in sequence, at least a portion of the final bonding adhesive 3 softens when the bonding device is subjected to a debonding process, and the hollow structure prepared in the semiconductor device 4 has no contact with the portion of the final bonding adhesive 3 that softens when the bonding device is subjected to a debonding process. The present invention sets the above-mentioned final bonding adhesive 3 to be at least partially softened when the bonding device is subjected to a debonding process, and the hollow structure prepared in the semiconductor device 4 has no contact with the softened portion of the final bonding adhesive 3, which can prevent the softened final bonding adhesive 3 from driving the hollow structure to move when the bonding device is subjected to a thermal slip debonding process, thereby improving the convenience of the debonding process of the carrier wafer 10 and the semiconductor device 4, and improving the yield rate of the semiconductor device 4.

[0138] In addition, the embodiment of the present invention sets the final bonding adhesive 3 layer to include a first sub-bonding adhesive layer 21 and a second sub-bonding adhesive layer 42 set along the direction of the carrier wafer 10 pointing to the semiconductor device 4, and the softening temperature of the first sub-bonding adhesive layer 21 is lower than the softening temperature of the second sub-bonding adhesive layer 42. It can ensure that when the carrier wafer 10 and the semiconductor device 4 are debonded, the first sub-bonding adhesive layer 21 that softens first has no contact with the hollow structure in the semiconductor device 4, so that when the first sub-bonding adhesive layer 21 that softens first is deformed, it will not cause The hollow structure in the semiconductor device 4 is movable, and it is convenient to prepare the final bonding glue 3; the final bonding glue 3 layer is set to include a first sub-bonding glue layer 21 with a lower softening temperature and a second sub-bonding glue layer 42 with a higher softening temperature set along the direction of the carrier 10 pointing to the semiconductor device 4, and on this basis, the second sub-bonding glue layer 42 is set corresponding to the semiconductor device 4 to form a through-hole structure 421 along the stacking direction, which can further avoid the prepared final bonding glue 3 affecting the stability of the hollow structure in the semiconductor device 4 during the debonding process.

[0139] The semiconductor device provided by an embodiment of the present invention is introduced below. The semiconductor device described below and the method for preparing the hollow structure in the semiconductor device described above can be referred to each other.

[0140] The semiconductor device provided by the embodiment of the present invention may include a wafer having a hollow structure formed therein;

[0141] The hollow structure is prepared by bonding a wafer and a carrier wafer using a final bonding adhesive;

[0142] At least part of the final bonding adhesive softens when the bonded device is debonded, and the hollow structure prepared in the semiconductor device has no contact with the part of the final bonding adhesive that softens when the bonded device is debonded.

[0143] The present invention sets the above-mentioned final bonding glue to be at least partially softened when the bonded device is debonded, and the hollow structure prepared in the semiconductor device has no contact with the softened part of the final bonding glue, which can avoid the softened final bonding glue driving the hollow structure to move when the bonded device is subjected to thermal sliding debonding treatment, thereby improving the convenience of debonding the carrier and the semiconductor device, and improving the yield rate of semiconductor device preparation.

[0144] In this specification, each embodiment is described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part.

[0145] In addition, it should be noted that, in this article, relationships such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprises" or any other variations are intended to cover non-exclusive inclusion, so that a process, method, article or device that includes a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0146] The above is a detailed introduction to the preparation method of the hollow structure in a semiconductor device provided by the present invention. Specific examples are used in this article to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea; at the same time, for general technicians in this field, according to the ideas of the present invention, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A method for preparing a hollow structure in a semiconductor device (4), characterized in that: include: Providing a carrier wafer (10) and a semiconductor device (4), and selecting a bonding surface of the carrier wafer (10) and / or a bonding surface of the semiconductor device (4) as a bonding surface to be processed; An initial bonding adhesive is prepared on the bonding surface to be processed, and the carrier wafer (10) and the semiconductor device (4) are bonded and connected using the initial bonding adhesive to obtain a bonded device, and the entire initial bonding adhesive between the carrier wafer (10) and the semiconductor device (4) is used as a final bonding adhesive (3); at least a portion of the final bonding adhesive (3) softens when the bonded device is debonded, and the hollow structure prepared in the semiconductor device (4) has no contact with the portion of the final bonding adhesive (3) that softens when the bonded device is debonded; Processing the semiconductor device (4) to prepare the hollow structure in the semiconductor device (4); The bonded device is debonded using a thermal slip debonding process to complete the preparation of the hollow structure in the semiconductor device (4).

2. The method for preparing a hollow structure in a semiconductor device (4) according to claim 1, characterized in that: The final bonding adhesive (3) comprises a first sub-bonding adhesive layer (21) and a second sub-bonding adhesive layer (42) which are stacked along a preset direction, and the softening temperature of the first sub-bonding adhesive layer (21) is lower than the softening temperature of the second sub-bonding adhesive layer (42); the preset direction is a direction from the bonding surface of the carrier wafer (10) to the bonding surface of the semiconductor device (4).

3. The method for preparing a hollow structure in a semiconductor device (4) according to claim 2, characterized in that: Selecting the bonding surface of the carrier wafer (10) and the bonding surface of the semiconductor device (4) as the bonding surfaces to be processed; Accordingly, an initial bonding adhesive is prepared on the bonding surface to be processed, and the carrier wafer (10) and the semiconductor device (4) are bonded and connected using the initial bonding adhesive to obtain a bonded device, comprising: Preparing the first sub-bonding adhesive layer (21) on the bonding surface of the carrier wafer (10); Preparing the second sub-bonding adhesive layer (42) on the bonding surface of the semiconductor device (4); The first sub-bonding adhesive layer (21) and the second sub-bonding adhesive layer (42) are used to bond the carrier wafer (10) and the semiconductor device (4) to obtain the bonded device.

4. The method for preparing a hollow structure in a semiconductor device (4) according to claim 3, characterized in that: After preparing the second sub-bonding adhesive layer (42) on the bonding surface of the semiconductor device (4), and before bonding the carrier wafer (10) and the semiconductor device (4) using the first sub-bonding adhesive layer (21) and the second sub-bonding adhesive layer (42), the method further comprises: Performing a patterning process on the second sub-bonding adhesive layer (42) so that the second sub-bonding adhesive layer (42) forms a through-hole structure (421) along the preset direction corresponding to the semiconductor device (4), thereby obtaining a patterned second sub-bonding adhesive layer; Correspondingly, the carrier wafer (10) and the semiconductor device (4) are bonded and connected using the first sub-bonding adhesive layer (21) and the second sub-bonding adhesive layer (42) to obtain the bonded device, comprising: The first sub-bonding adhesive layer (21) and the patterned second sub-bonding adhesive layer are used to bond the carrier wafer (10) and the semiconductor device (4) to obtain the bonded device.

5. The method for preparing a hollow structure in a semiconductor device (4) according to claim 4, characterized in that: The second sub-bonding adhesive layer (42) is patterned so that the second sub-bonding adhesive layer (42) forms a through-hole structure (421) along the preset direction corresponding to the semiconductor device (4), thereby obtaining a patterned second sub-bonding adhesive layer, comprising: The second sub-bonding adhesive layer (42) is subjected to photolithography processing until the through-hole structure (421) is formed in the second sub-bonding adhesive layer (42), thereby obtaining the patterned second sub-bonding adhesive layer; the second sub-bonding adhesive layer (42) is a photosensitive adhesive layer; Or, a patterned photoresist is prepared on the surface of the second sub-bonding adhesive layer (42); the patterned photoresist is a patterned structure formed along the preset direction corresponding to the semiconductor device (4) and exposing the second sub-bonding adhesive layer (42); The second sub-bonding adhesive layer (42) exposed by the patterned photoresist is etched along the preset direction until the through-hole structure (421) is formed in the second sub-bonding adhesive layer (42), thereby obtaining the patterned second sub-bonding adhesive layer.

6. The method for preparing a hollow structure in a semiconductor device (4) according to claim 2, characterized in that: Selecting the bonding surface of the carrier wafer (10) as the bonding surface to be processed; Accordingly, an initial bonding adhesive is prepared on the bonding surface to be processed, and the carrier wafer (10) and the semiconductor device (4) are bonded and connected using the initial bonding adhesive to obtain a bonded device, comprising: Sequentially preparing the first sub-bonding adhesive layer (21) and the second sub-bonding adhesive layer (42) on the bonding surface of the carrier wafer (10); Preparing a through hole structure (421) formed along the preset direction corresponding to the semiconductor device (4) in the second sub-bonding adhesive layer (42) to obtain a patterned second sub-bonding adhesive layer; The first sub-bonding adhesive layer (21) and the patterned second sub-bonding adhesive layer are used to bond the carrier wafer (10) and the semiconductor device (4) to obtain the bonded device.

7. The method for preparing a hollow structure in a semiconductor device (4) according to claim 1, characterized in that: The final bonding adhesive (3) is close to the surface of the semiconductor device (4), and an opening structure is formed corresponding to the semiconductor device (4).

8. A semiconductor bonding device with a hollow structure to be prepared, characterized in that: include: A carrier wafer (10), a final bonding adhesive (3), and a semiconductor device (4) stacked in sequence; At least a portion of the final bonding glue (3) softens when the bonding device is debonded, and the hollow structure prepared in the semiconductor device (4) has no contact with the portion of the final bonding glue (3) that softens when the bonding device is debonded.

9. The semiconductor bonding device with a hollow structure to be prepared according to claim 8, characterized in that: The final bonding adhesive (3) comprises a first sub-bonding adhesive layer (21) and a second sub-bonding adhesive layer (42) arranged along a direction from the carrier wafer (10) to the semiconductor device (4), and the softening temperature of the first sub-bonding adhesive layer (21) is lower than the softening temperature of the second sub-bonding adhesive layer (42).

10. The semiconductor bonding device with a hollow structure to be prepared according to claim 9, characterized in that: The final bonding adhesive (3) comprises the first sub-bonding adhesive layer (21) and the second sub-bonding adhesive layer (42); A through-hole structure (421) is formed in the second sub-bonding adhesive layer (42) corresponding to the semiconductor device (4) along the stacking direction.

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