A method for preparing a hollow structure in a semiconductor device

Abstract

The present invention discloses a method for preparing a hollow structure in a semiconductor device, which is applied to the field of semiconductor preparation, comprising: selecting the bonding surface of a carrier wafer and / or the bonding surface of a semiconductor device as a bonding surface to be processed; preparing an initial bonding glue on the bonding surface to be processed, and using the initial bonding glue to bond the carrier wafer and the semiconductor device, and using all the initial bonding glue as the final bonding glue; at least a portion of the final bonding glue softens when the bonded device is debonded, and the hollow structure prepared in the semiconductor device has no contact with the softened final bonding glue portion; preparing the hollow structure; and debonding the bonded device. The present invention sets the above-mentioned final bonding glue to be at least partially softened when the bonded device is debonded, and the prepared hollow structure has no contact with the softened portion of the final bonding glue, which can avoid the softened final bonding glue from driving the hollow structure to move, thereby improving the preparation yield of semiconductor devices.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor preparation, and in particular to a method for preparing a hollow structure in a semiconductor device. Background Art

[0002] Taking micromechanical pressure sensors as an example, microelectromechanical systems (MEMS) are widely used in fields such as intelligent systems. Compared to microelectronics, MEMS adds mechanical structures at the micro-nano scale. Current MEMS devices generally have movable structures, and in many cases, these are hollow structures that extend through the wafer. This structure often requires a temporary bonding process to achieve during processing. In the temporary bonding process, the hot slip debonding method softens and flows the bonding adhesive by heating, and a parallel force is applied to cause the device wafer and the carrier to slide parallel to each other and separate, completing the debonding. However, when processing hollow structures in MEMS using the hot slip debonding method, the softened bonding adhesive will move along the sliding direction due to the slipping action. Once this movement exceeds the limit of the hollow structure, the hollow structure will break, causing the chip to fail, which in turn leads to wafer scrapping or a decrease in wafer yield.

[0003] Therefore, how to provide a method to avoid slipping during the hot slip debonding process so that the softened bonding adhesive drives the hollow structure in the device to move along the slip direction is a technical problem that technical personnel in this field urgently need to solve. Summary of the Invention

[0004] In view of this, the purpose of the present invention is to provide a method for preparing a hollow structure in a semiconductor device, which solves the problem that when processing the hollow structure in MEMS by the thermal slip debonding method in the prior art, the slip method will cause the softened bonding glue to drive the hollow structure to move along the slip direction, which may easily lead to chip failure, and then cause the wafer to be scrapped or the wafer yield to decrease.

[0005] To solve the above technical problems, the present invention provides a method for preparing a hollow structure in a semiconductor device, comprising:

[0006] Providing a carrier wafer and a semiconductor device, and selecting the bonding surface of the carrier wafer and / or the bonding surface of the semiconductor device as the bonding surface to be processed;

[0007] An initial bonding adhesive is prepared on the bonding surface to be processed, and the carrier wafer and the semiconductor device are bonded together using the initial bonding adhesive to obtain a bonded device, and the entire initial bonding adhesive between the carrier wafer and the semiconductor device is used as a final bonding adhesive; at least a portion of the final bonding adhesive softens when the bonded device is debonded, and the hollow structure prepared in the semiconductor device does not contact the portion of the final bonding adhesive that softens when the bonded device is debonded;

[0008] Processing the semiconductor device to prepare the hollow structure in the semiconductor device;

[0009] The bonded device is debonded using a thermal slip debonding process to complete the preparation of the hollow structure in the semiconductor device.

[0010] Optionally, the final bonding adhesive includes a first sub-bonding adhesive layer and a second sub-bonding adhesive layer stacked along a preset direction, and the softening temperature of the first sub-bonding adhesive layer is lower than the softening temperature of the second sub-bonding adhesive layer; the preset direction is the direction from the bonding surface of the carrier wafer to the bonding surface of the semiconductor device.

[0011] Optionally, the bonding surface of the carrier wafer and the bonding surface of the semiconductor device are both selected as the bonding surface to be processed;

[0012] Accordingly, an initial bonding adhesive is prepared on the bonding surface to be processed, and the carrier wafer and the semiconductor device are bonded together using the initial bonding adhesive to obtain a bonded device, including:

[0013] preparing the first sub-bonding adhesive layer on the bonding surface of the carrier wafer;

[0014] preparing the second sub-bonding adhesive layer on the bonding surface of the semiconductor device;

[0015] The carrier wafer and the semiconductor device are bonded together by using the first sub-bonding adhesive layer and the second sub-bonding adhesive layer to obtain the bonded device.

[0016] Optionally, after preparing the second sub-bonding adhesive layer on the bonding surface of the semiconductor device and before bonding the carrier wafer and the semiconductor device using the first sub-bonding adhesive layer and the second sub-bonding adhesive layer, the method further includes:

[0017] Performing a patterning process on the second sub-bonding adhesive layer so that the second sub-bonding adhesive layer forms a through-hole structure corresponding to the semiconductor device along the preset direction, thereby obtaining a patterned second sub-bonding adhesive layer;

[0018] Correspondingly, the carrier wafer and the semiconductor device are bonded together using the first sub-bonding adhesive layer and the second sub-bonding adhesive layer to obtain the bonded device, including:

[0019] The carrier wafer and the semiconductor device are bonded together by utilizing the first sub-bonding adhesive layer and the patterned second sub-bonding adhesive layer to obtain the bonded device.

[0020] Optionally, patterning the second sub-bonding adhesive layer so that a through-hole structure is formed in the second sub-bonding adhesive layer along the preset direction corresponding to the semiconductor device, to obtain a patterned second sub-bonding adhesive layer, includes:

[0021] Performing photolithography on the second sub-bonding adhesive layer until the through-hole structure is formed in the second sub-bonding adhesive layer to obtain the patterned second sub-bonding adhesive layer; the second sub-bonding adhesive layer is a photosensitive adhesive layer;

[0022] Alternatively, a patterned photoresist is prepared on the surface of the second sub-bonding adhesive layer; the patterned photoresist is a patterned structure formed along the preset direction corresponding to the semiconductor device, exposing the second sub-bonding adhesive layer;

[0023] The second sub-bonding adhesive layer exposed by the patterned photoresist is etched along the preset direction until the through-hole structure is formed in the second sub-bonding adhesive layer to obtain the patterned second sub-bonding adhesive layer.

[0024] Optionally, the bonding surface of the carrier wafer is selected as the bonding surface to be processed;

[0025] Accordingly, an initial bonding adhesive is prepared on the bonding surface to be processed, and the carrier wafer and the semiconductor device are bonded together using the initial bonding adhesive to obtain a bonded device, including:

[0026] Sequentially preparing the first sub-bonding adhesive layer and the second sub-bonding adhesive layer on the bonding surface of the carrier wafer;

[0027] preparing a through-hole structure formed along the preset direction corresponding to the semiconductor device in the second sub-bonding adhesive layer to obtain a patterned second sub-bonding adhesive layer;

[0028] The carrier wafer and the semiconductor device are bonded together by utilizing the first sub-bonding adhesive layer and the patterned second sub-bonding adhesive layer to obtain the bonded device.

[0029] Optionally, the final bonding adhesive is close to the surface of the semiconductor device, and an opening structure is formed corresponding to the semiconductor device.

[0030] The present invention also provides a semiconductor bonding device with a hollow structure to be prepared, comprising:

[0031] A carrier wafer, a final bonding adhesive and a semiconductor device are sequentially stacked;

[0032] At least a portion of the final bonding adhesive softens when the bonded device is debonded, and the hollow structure prepared in the semiconductor device has no contact with the portion of the final bonding adhesive that softens when the bonded device is debonded.

[0033] Optionally, the final bonding adhesive includes a first sub-bonding adhesive layer and a second sub-bonding adhesive layer arranged along the direction of the carrier wafer pointing to the semiconductor device, and the softening temperature of the first sub-bonding adhesive layer is lower than the softening temperature of the second sub-bonding adhesive layer.

[0034] Optionally, the final bonding adhesive includes the first sub-bonding adhesive layer and the second sub-bonding adhesive layer;

[0035] A through-hole structure is formed in the second sub-bonding adhesive layer along the stacking direction corresponding to the semiconductor device.

[0036] It can be seen that the method for preparing a hollow structure in a semiconductor device provided by the present invention includes providing a carrier wafer and a semiconductor device, selecting the bonding surface of the carrier wafer and / or the bonding surface of the semiconductor device as the bonding surface to be processed, preparing an initial bonding glue on the bonding surface to be processed, and using the initial bonding glue to bond the carrier wafer and the semiconductor device to obtain a bonded device, and using all the initial bonding glue between the carrier wafer and the semiconductor device as the final bonding glue, at least a portion of the final bonding glue softens when the bonded device is debonded, and the hollow structure prepared in the semiconductor device has no contact with the portion of the final bonding glue that softens when the bonded device is debonded, processing the semiconductor device to prepare the hollow structure in the semiconductor device, debonding the bonded device using a thermal slip debonding process, and completing the preparation of the hollow structure in the semiconductor device. The present invention sets the above-mentioned final bonding glue to be at least partially softened when the bonded device is debonded, and the hollow structure prepared in the semiconductor device has no contact with the softened part of the final bonding glue. This can avoid the softened final bonding glue driving the hollow structure to move when the bonded device is subjected to thermal sliding debonding treatment, thereby improving the convenience of debonding the carrier and the semiconductor device, and improving the yield rate of semiconductor device preparation.

[0037] In addition, the present invention also provides a semiconductor bonding device with a hollow structure to be prepared, which also has the above-mentioned beneficial effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are merely embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.

[0039] Figure 1 A flow chart of a method for preparing a hollow structure in a semiconductor device provided by an embodiment of the present invention;

[0040] Figure 2 A flow chart of bonding a carrier wafer and a semiconductor device provided in an embodiment of the present invention;

[0041] Figure 3 Another flow chart for bonding a carrier wafer and a semiconductor device provided by an embodiment of the present invention;

[0042] Figure 4 A flow chart of a method for preparing a hollow structure in a MEMS wafer provided by an embodiment of the present invention;

[0043] Figure 5 A flowchart illustrating a method for preparing a hollow structure in a MEMS wafer according to an embodiment of the present invention;

[0044] Figure 6 A flow chart of another method for preparing a hollow structure in a MEMS wafer provided by an embodiment of the present invention;

[0045] Figure 7 A flowchart illustrating another method for preparing a hollow structure in a MEMS wafer according to an embodiment of the present invention;

[0046] Figure 8 A schematic structural diagram of a semiconductor bonding device with a hollow structure to be prepared according to an embodiment of the present invention;

[0047] Figure 9 A schematic structural diagram of another semiconductor bonding device with a hollow structure to be prepared according to an embodiment of the present invention.

[0048] The following are the descriptions of the reference numerals:

[0049] 1-area where external force is applied, 2-area where heating is performed, 3-final bonding glue, 4-semiconductor device, 10-carrying wafer, 20-bonding glue with lower softening temperature, 21-first sub-bonding glue layer, 30-MEMS wafer, 31-suspended structure, 40-bonding glue with higher softening temperature, 41-cavity structure, 42-second sub-bonding glue layer, 421-through hole structure. DETAILED DESCRIPTION

[0050] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0051] Please refer to Figure 1 , Figure 1 A flowchart of a method for preparing a hollow structure in a semiconductor device provided by an embodiment of the present invention. The method may include:

[0052] S101: providing a carrier wafer and a semiconductor device, and selecting a bonding surface of the carrier wafer and / or a bonding surface of the semiconductor device as a bonding surface to be processed.

[0053] The execution subject of this embodiment is a semiconductor device processing equipment. The purpose of this embodiment is to prepare a hollow structure in a semiconductor device. The hollow structure is a suspended structure that is not in contact with the rest of the semiconductor device. In this embodiment, the carrier is a component used to carry the semiconductor device so as to facilitate the processing of the semiconductor device. Therefore, it is necessary to bond the carrier to the semiconductor device before processing the semiconductor device to prepare the above-mentioned hollow structure. After the above-mentioned hollow structure is prepared, the carrier and the semiconductor device are debonded to separate the carrier from the semiconductor device. In this embodiment, the bonding surface of the carrier is the surface of the carrier facing the semiconductor device when the carrier is bonded to the semiconductor device. The corresponding bonding surface of the semiconductor device is the surface of the semiconductor device facing the carrier when the semiconductor device is bonded to the carrier. In this embodiment, the bonding surface of the carrier and / or the bonding surface of the semiconductor device are set as the bonding surface to be processed, that is, at least one bonding surface of the carrier and the semiconductor device can be selected as the bonding surface to be processed. The present embodiment does not limit the specific type of the semiconductor device. For example, the semiconductor device may be a MEMS (micro-electromechanical system) device.

[0054] S102: preparing an initial bonding glue on the bonding surface to be processed, and using the initial bonding glue to bond the carrier wafer and the semiconductor device to obtain a bonded device, and using all the initial bonding glue between the carrier wafer and the semiconductor device as the final bonding glue; at least a portion of the final bonding glue is softened when the bonded device is debonded, and the hollow structure prepared in the semiconductor device has no contact with the portion of the final bonding glue that is softened when the bonded device is debonded.

[0055] In this embodiment, an initial bonding glue is prepared on the bonding surface to be processed, and the carrier wafer and the semiconductor device are bonded together using the initial bonding glue prepared on the bonding surface to be processed. At this time, all the bonding glue between the carrier wafer and the semiconductor device is used as the final bonding glue. It should be pointed out that when only the bonding surface of the carrier wafer is selected as the bonding surface to be processed, the initial bonding glue is only prepared on the bonding surface of the carrier wafer, and the carrier wafer and the semiconductor device are bonded together using the initial bonding glue. At this time, the initial bonding glue prepared only on the bonding surface of the carrier wafer is the final bonding glue; when only the bonding surface of the semiconductor device is selected as the bonding surface to be processed, the initial bonding glue is only prepared on the bonding surface of the semiconductor device, and the carrier wafer and the semiconductor device are bonded together using the initial bonding glue. At this time, the initial bonding glue prepared only on the bonding surface of the semiconductor device is the final bonding glue; when the bonding surface of the carrier wafer and the bonding surface of the semiconductor device are both selected as the bonding surfaces to be processed, the initial bonding glue is prepared on the bonding surface of the carrier wafer and the bonding surface of the semiconductor device, and the carrier wafer and the semiconductor device are bonded together using the prepared initial bonding glue. At this time, the initial bonding glue prepared on the bonding surface of the carrier wafer and the initial bonding glue prepared on the bonding surface of the semiconductor device together constitute the final bonding glue.

[0056] It should be further explained that, in this embodiment, at least a portion of the final bonding glue is softened when the bonded device is debonded, that is, the softening temperature of at least a portion of the final bonding glue is lower than the processing temperature when the bonded device is debonded. Specifically, the bonded device is debonded using a thermal slip debonding process. At this time, the softened portion of the final bonding glue is easily deformed by the action of the torque, and then the carrier and the semiconductor device are separated by sliding. Since the softened portion of the final bonding glue is deformed during the thermal slip debonding process, the hollow structure prepared in the semiconductor device is set to have no contact with the portion of the final bonding glue that is softened when the bonded device is debonded. Therefore, the softened and deformed portion of the final bonding glue will not drive the hollow structure in the semiconductor device to move, thereby ensuring the yield of the hollow structure preparation in the semiconductor device. It should be noted that in this embodiment, the final bonding adhesive can be configured to partially soften when the bonded device is debonded, that is, the final bonding adhesive is composed of multiple bonding adhesives with different softening temperatures. Under the premise of meeting the process requirements, in order to improve the simplicity of preparation, the final bonding adhesive can be configured to be composed of two bonding adhesives with different softening temperatures. Alternatively, this embodiment can also configure the final bonding adhesive to fully soften when the bonded device is debonded, and the corresponding hollow structure in the semiconductor device needs to be non-contacted with the entire final bonding adhesive. This embodiment does not limit the specific type of the initial bonding adhesive, as long as it can complete the bonding connection between the carrier and the semiconductor device.

[0057] S103: Processing the semiconductor device to prepare a hollow structure in the semiconductor device.

[0058] It should be noted that the area where the semiconductor device is processed in this embodiment corresponds to the area of the final bonding adhesive that softens when the bonded device is debonded.

[0059] S104: performing a debonding process on the bonded device using a thermal slip debonding process to complete the preparation of the hollow structure in the semiconductor device.

[0060] In this embodiment, after the hollow structure of the semiconductor device is prepared, the above-mentioned bonded device is debonded using a hot-slip debonding process, which can ensure that the hollow structure will not shift during the debonding process, thereby improving the yield of the hollow structure preparation. In addition, it should be noted that when the above-mentioned final bonding glue is composed of a plurality of bonding glues with different softening temperatures, the temperature of the hot-slip debonding process needs to be set accordingly, which is greater than the softening temperature of the bonding glue part with a low softening temperature in the final bonding glue, and lower than the softening temperature of the bonding glue part with a high softening temperature in the final bonding glue. The hot-slip debonding process is to soften and flow the above-mentioned final bonding glue by heating, and apply a parallel force to make the semiconductor device and the carrier slide and separate from each other to complete the debonding. Compared with wet debonding, it is more efficient. Compared with laser debonding, in this embodiment, the carrier can use a silicon wafer, which can avoid the problem of thermal mismatch.

[0061] Furthermore, in order to ensure the simplicity of preparation of the final bonding adhesive, the above-mentioned final bonding adhesive can be arranged to include a first sub-bonding adhesive layer and a second sub-bonding adhesive layer stacked along a preset direction, and the softening temperature of the first sub-bonding adhesive layer is lower than the softening temperature of the second sub-bonding adhesive layer; the preset direction is the direction from the bonding surface of the carrier to the bonding surface of the semiconductor device.

[0062] It should be noted that in this embodiment, the final bonding glue is composed of two bonding glues with different softening temperatures, namely a first sub-bonding glue layer with a lower softening temperature and a second sub-bonding glue layer with a higher softening temperature, and the above-mentioned first sub-bonding glue layer and the second sub-bonding glue layer are arranged along the above-mentioned preset direction, and the first sub-bonding glue layer is arranged on the side away from the semiconductor device to avoid the first sub-bonding glue layer from contacting the hollow structure in the semiconductor device while improving the convenience of preparing the final bonding glue.

[0063] In this embodiment, two layers of initial bonding glue with a large difference in softening temperatures are prepared, the carrier wafer is coated with soft glue (the soft glue is a bonding glue with a lower softening temperature) for sliding debonding, and the semiconductor device is coated with hard glue (the hard glue is a bonding glue with a higher softening temperature) to protect the hollow structure from sliding, thereby avoiding damage to the hollow structure during the debonding process and improving the output yield of semiconductor devices.

[0064] Furthermore, in order to improve the convenience of bonding device preparation, you can refer to Figure 2 , Figure 2 A flow chart of bonding a carrier wafer and a semiconductor device provided by an embodiment of the present invention. Both the bonding surface of the carrier wafer and the bonding surface of the semiconductor device can be selected as the bonding surfaces to be processed;

[0065] Accordingly, preparing an initial bonding adhesive on the bonding surface to be processed, and using the initial bonding adhesive to bond the carrier wafer and the semiconductor device to obtain a bonded device may include the following steps:

[0066] Step S11: preparing a first sub-bonding adhesive layer on the bonding surface of the carrier wafer;

[0067] Step S12: preparing a second sub-bonding adhesive layer on the bonding surface of the semiconductor device;

[0068] Step S13: using the first sub-bonding adhesive layer and the second sub-bonding adhesive layer to bond the carrier wafer and the semiconductor device to obtain a bonded device.

[0069] In this embodiment, the first sub-bonding adhesive layer and the second sub-bonding adhesive layer are prepared on the bonding surface of the carrier and the bonding surface of the semiconductor device respectively, which can ensure the preparation efficiency of the initial bonding adhesive and improve the convenience of preparation. The carrier and the semiconductor device are bonded together using the first sub-bonding adhesive layer and the second sub-bonding adhesive layer, which can ensure the stability of the connection between the carrier and the semiconductor device, thereby improving the convenience of preparing the bonded device.

[0070] Furthermore, in order to ensure that the final bonding adhesive prepared does not affect the structural stability of the hollow structure in the semiconductor device when it is removed, and to avoid contamination of the semiconductor device, after preparing the second sub-bonding adhesive layer on the bonding surface of the semiconductor device, before bonding the carrier wafer and the semiconductor device using the first sub-bonding adhesive layer and the second sub-bonding adhesive layer, the following steps may also be included:

[0071] Performing a patterning process on the second sub-bonding adhesive layer so that a through-hole structure is formed in the second sub-bonding adhesive layer along a preset direction corresponding to the semiconductor device, thereby obtaining a patterned second sub-bonding adhesive layer;

[0072] Accordingly, the carrier wafer and the semiconductor device are bonded together using the first sub-bonding adhesive layer and the second sub-bonding adhesive layer to obtain a bonded device, which may include:

[0073] The carrier wafer and the semiconductor device are bonded together by utilizing the first sub-bonding adhesive layer and the patterned second sub-bonding adhesive layer to obtain a bonded device.

[0074] It should be noted that in this embodiment, the second sub-bonding adhesive layer is patterned so that the second sub-bonding adhesive layer forms a through-hole structure along a preset direction corresponding to the semiconductor device. Specifically, the second sub-bonding adhesive layer forms a through-hole structure along the preset direction corresponding to the hollow structure in the semiconductor device. Then, on the basis of setting two initial bonding adhesives with different softening temperatures to facilitate the separation of the carrier and the semiconductor device, the second sub-bonding adhesive layer is made to have no contact with the above-mentioned hollow structure, thereby further avoiding the bonding adhesive affecting the functionality of the hollow structure.

[0075] Furthermore, in order to ensure that the patterned second sub-bonding layer is successfully prepared, the patterning process of the second sub-bonding layer is performed so that the second sub-bonding layer forms a through-hole structure corresponding to the semiconductor device along a preset direction to obtain the patterned second sub-bonding layer, which may include:

[0076] Performing photolithography on the second sub-bonding adhesive layer until a through-hole structure is formed in the second sub-bonding adhesive layer to obtain a patterned second sub-bonding adhesive layer; the second sub-bonding adhesive layer is a photosensitive adhesive layer;

[0077] Alternatively, a patterned photoresist is prepared on the surface of the second sub-bonding adhesive layer; the patterned photoresist is a patterned structure formed along a preset direction corresponding to the semiconductor device to expose the second sub-bonding adhesive layer;

[0078] The second sub-bonding adhesive layer exposed by the patterned photoresist is etched along a preset direction until a through-hole structure is formed in the second sub-bonding adhesive layer to obtain a patterned second sub-bonding adhesive layer.

[0079] It should be noted that in this embodiment, when the second sub-bonding adhesive layer is a photosensitive adhesive layer, the second sub-bonding adhesive layer can be directly subjected to photolithography processing until a through-hole structure is formed in the second sub-bonding adhesive layer, thereby obtaining a patterned second sub-bonding adhesive layer. However, when the through-hole structure cannot be directly formed in the second sub-bonding adhesive layer by photolithography, it is necessary to prepare a patterned photoresist on the surface of the second sub-bonding adhesive layer, and then etch the second sub-bonding adhesive layer based on the patterned photoresist to form a patterned second sub-bonding adhesive layer.

[0080] Furthermore, in order to ensure that the first sub-bonding adhesive layer and the second sub-bonding adhesive layer are prepared smoothly, the step of preparing the first sub-bonding adhesive layer on the bonding surface of the carrier wafer may include:

[0081] Spin coating a first sub-bonding adhesive layer material on the bonding surface of the carrier wafer, and performing a heat drying process to obtain a first sub-bonding adhesive layer;

[0082] Accordingly, preparing a second sub-bonding adhesive layer on the bonding surface of the semiconductor device may include:

[0083] The second sub-bonding adhesive layer material is spin-coated on the bonding surface of the semiconductor device and is subjected to a heat drying process to obtain the second sub-bonding adhesive layer.

[0084] Furthermore, in order to ensure the structural stability of the bonded device, the above-mentioned bonding connection between the carrier wafer and the semiconductor device using the first sub-bonding adhesive layer and the second sub-bonding adhesive layer to obtain the bonded device may include:

[0085] The first sub-bonding adhesive layer and the second sub-bonding adhesive layer are laminated, and the carrier wafer and the semiconductor device are subjected to heating and pressurizing treatments to complete the bonding connection between the carrier wafer and the semiconductor device to obtain a bonded device.

[0086] In this embodiment, the carrier wafer and the semiconductor device are subjected to heating and pressurizing treatments so that the first sub-bonding adhesive layer and the second sub-bonding adhesive layer are firmly connected, thereby improving the bonding stability of the bonding device.

[0087] Furthermore, in order to avoid directly processing the semiconductor device and damaging the semiconductor device, you can refer to Figure 3 , Figure 3 Another flow chart for bonding a carrier wafer and a semiconductor device provided by an embodiment of the present invention. The bonding surface of the carrier wafer can be selected as the bonding surface to be processed;

[0088] Accordingly, preparing an initial bonding adhesive on the bonding surface to be processed, and bonding the carrier wafer and the semiconductor device using the initial bonding adhesive to obtain a bonded device may include:

[0089] Step S21: sequentially preparing a first sub-bonding adhesive layer and a second sub-bonding adhesive layer on the bonding surface of the carrier wafer;

[0090] Step S22: preparing a through-hole structure corresponding to the semiconductor device along a preset direction in the second sub-bonding adhesive layer to obtain a patterned second sub-bonding adhesive layer;

[0091] Step S23: using the first sub-bonding adhesive layer and the patterned second sub-bonding adhesive layer to bond the carrier wafer and the semiconductor device to obtain a bonded device.

[0092] It should be noted that in this embodiment, only the bonding surface of the carrier wafer is used as the bonding surface to be processed, and the first sub-bonding adhesive layer and the second sub-bonding adhesive layer are both prepared on the bonding surface of the carrier wafer to avoid the processing process from affecting the semiconductor device.

[0093] Furthermore, in order to completely prevent the final bonding adhesive from affecting the hollow structure in the semiconductor device, the final bonding adhesive may be arranged close to the surface of the semiconductor device, so that an opening structure is formed corresponding to the semiconductor device.

[0094] It should be noted that in this embodiment, an opening structure is provided on the surface of the final bonding glue close to the semiconductor device, and the opening structure corresponds to the hollow structure provided in the semiconductor device, so as to avoid the final bonding glue from contacting the hollow structure in the semiconductor device through the opening structure provided on the surface of the final bonding glue close to the semiconductor device, so as to avoid the hollow structure from moving during the debonding process. The opening structure provided in this embodiment can be provided as a groove structure, or can be provided as a through-hole structure, as long as it can avoid the final bonding glue from contacting the hollow structure in the semiconductor device. This embodiment provides a temporary bonding glue structure that can be graphed, and the opening structure provided allows the final bonding glue to avoid the hollow structure, thereby avoiding the hollow structure from being damaged during the debonding process, and improving the output yield of the semiconductor device.

[0095] A method for preparing a hollow structure in a semiconductor device provided by an embodiment of the present invention includes providing a carrier wafer and a semiconductor device, selecting the bonding surface of the carrier wafer and / or the bonding surface of the semiconductor device as the bonding surface to be processed, preparing an initial bonding glue on the bonding surface to be processed, and using the initial bonding glue to bond the carrier wafer and the semiconductor device to obtain a bonded device, and using all the initial bonding glue between the carrier wafer and the semiconductor device as the final bonding glue, at least a portion of the final bonding glue softens when the bonded device is debonded, and the hollow structure prepared in the semiconductor device has no contact with the portion of the final bonding glue that softens when the bonded device is debonded, processing the semiconductor device to prepare the hollow structure in the semiconductor device, debonding the bonded device using a thermal slip debonding process, and completing the preparation of the hollow structure in the semiconductor device. The present invention sets the above-mentioned final bonding glue to be at least partially softened when the bonded device is debonded, and the hollow structure prepared in the semiconductor device has no contact with the softened part of the final bonding glue. This can avoid the softened final bonding glue driving the hollow structure to move when the bonded device is subjected to thermal sliding debonding treatment, thereby improving the convenience of debonding the carrier and the semiconductor device, and improving the yield rate of semiconductor device preparation.

[0096] In addition, the embodiment of the present invention sets the final bonding glue to be composed of a first sub-bonding glue layer with a lower softening temperature and a second sub-bonding glue layer with a higher softening temperature, and the above-mentioned first sub-bonding glue layer and the second sub-bonding glue layer are arranged along the above-mentioned preset direction, and the first sub-bonding glue layer is arranged on the side away from the semiconductor device to avoid the first sub-bonding glue layer from contacting the hollow structure in the semiconductor device, and to avoid the first sub-bonding glue layer that softens first during the debonding process from deforming and driving the hollow structure to move, thereby improving the convenience of preparing the final bonding glue; by respectively bonding the carrier wafer and the semiconductor device on the bonding surface The bonding surface of the first sub-bonding adhesive layer and the second sub-bonding adhesive layer are prepared accordingly, which can ensure the preparation efficiency of the initial bonding adhesive and improve the convenience of preparation. The first sub-bonding adhesive layer and the second sub-bonding adhesive layer are used to bond the carrier wafer and the semiconductor device, which can ensure the stability of the connection between the carrier wafer and the semiconductor device, thereby improving the convenience of preparing the bonded device; the second sub-bonding adhesive layer is patterned so that the second sub-bonding adhesive layer forms a through-hole structure along a preset direction corresponding to the hollow structure in the semiconductor device, and then two initial bonding adhesives with different softening temperatures are set to facilitate the carrier wafer and the semiconductor device to be bonded together. On the basis of the separation of the carrier wafer and the semiconductor device, the second sub-bonding adhesive layer is made to have no contact with the above-mentioned hollow structure, further avoiding the bonding adhesive from affecting the functionality of the hollow structure; when the second sub-bonding adhesive layer is a photosensitive adhesive layer, the second sub-bonding adhesive layer is directly subjected to photolithography processing, and when the second sub-bonding adhesive layer cannot directly form a through-hole structure by photolithography, it is necessary to prepare a patterned photoresist on the surface of the second sub-bonding adhesive layer, and then etch the second sub-bonding adhesive layer according to the patterned photoresist to ensure that the patterned second sub-bonding adhesive layer is successfully prepared; by heating the carrier wafer and the semiconductor device The first sub-bonding adhesive layer and the second sub-bonding adhesive layer are processed and pressurized to firmly connect the first sub-bonding adhesive layer and the second sub-bonding adhesive layer, thereby improving the bonding stability of the bonding device; only the bonding surface of the carrier wafer is used as the bonding surface to be processed, and the first sub-bonding adhesive layer and the second sub-bonding adhesive layer are both prepared on the bonding surface of the carrier wafer, thereby avoiding the processing procedure from affecting the semiconductor device; by setting an opening structure corresponding to the hollow structure set in the semiconductor device on the surface of the final bonding adhesive close to the semiconductor device, the final bonding adhesive is avoided from contacting the hollow structure in the semiconductor device, so as to avoid the hollow structure from moving during the debonding process.

[0097] In a feasible embodiment, the semiconductor device is configured as a MEMS device, and the preparation method of the corresponding hollow structure in the MEMS wafer 30 can refer to Figure 4 , Figure 4 A flowchart of a method for preparing a hollow structure in a MEMS wafer provided by an embodiment of the present invention may include the following steps:

[0098] Step S31: providing a carrier wafer 10 required for temporary bonding.

[0099] The carrier plate 10 can be a silicon carrier plate, a quartz carrier plate, a glass carrier plate, etc. The thickness of the carrier plate 10 can be set to be between 150 microns and 800 microns. Figure 5 , Figure 5 FIG is a flow chart of a method for preparing a hollow structure in a MEMS wafer 30 provided in an embodiment of the present invention. Further, step S31 in this embodiment may correspond to reference Figure 5 As shown in (a).

[0100] Step S32: Spin-coating a layer of bonding adhesive 20 with a relatively low softening temperature on the front surface of the carrier wafer 10, and drying the bonding adhesive 20 with a relatively low softening temperature using a hot plate or an oven.

[0101] The bonding glue 20 with a lower softening temperature can be a common photoresist or bonding glue, and its softening temperature can be set to be within the range of 80°C to 150°C, and its thickness can be set to be 10 microns to 200 microns. Figure 5 As shown in (b), the bonding adhesive 20 with a relatively low softening temperature corresponds to the first sub-bonding adhesive layer in the above-mentioned preparation method.

[0102] Step S33: providing a MEMS wafer 30 , spin-coating a layer of bonding adhesive 40 with a relatively high softening temperature on the back side of the MEMS wafer 30 , and drying the bonding adhesive 40 with a relatively high softening temperature by using a hot plate or an oven.

[0103] In this embodiment, the MEMS wafer 30 can be a silicon wafer, a quartz wafer, a glass wafer, etc., and its thickness can be set to between 150 microns and 800 microns. The bonding adhesive 40 with a higher softening temperature can be set to conventional bonding adhesive, PI (polyimide) adhesive, SU8 (SU-8 material is a negative epoxy resin type, near-ultraviolet photoresist) adhesive, etc., and its softening temperature can be set to within the range of 150°C to 250°C, and its thickness can be set to between 10 microns and 200 microns. In this embodiment, step S33 can correspond to reference Figure 5 As shown in (c), the bonding adhesive 40 with a higher softening temperature in this embodiment is relative to the bonding adhesive 20 with a lower softening temperature. That is, the bonding adhesive 40 with a higher softening temperature is required to maintain a softening temperature higher than that of the bonding adhesive 20 with a lower softening temperature. This bonding adhesive 40 with a higher softening temperature corresponds to the second sub-bonding adhesive layer in the above-described preparation method.

[0104] Step S34: The MEMS wafer 30 is bonded to the carrier 10, and the bonding glue 20 with a lower softening temperature is in direct contact with the bonding glue 40 with a higher softening temperature. By applying temperature and pressure to the MEMS wafer 30 and the carrier 10, the MEMS wafer 30 and the carrier 10 are bonded together to complete temporary bonding.

[0105] The structure prepared in step S34 in this embodiment can correspond to the reference Figure 5 (d) The applicable temperature range can be set to 80°C to 250°C, and the applicable pressure can be set to between 0.1kN and 1kN;

[0106] Step S35: On the front side of the MEMS wafer 30, conventional MEMS processes such as photolithography and etching are used to form a suspended structure 31 that runs through the MEMS wafer 30 and points from the front side of the MEMS wafer 30 to the back side of the MEMS wafer 30. Figure 5 As shown in (e), the suspended structure 31 corresponds to the hollow structure in the above-mentioned preparation method.

[0107] Step S36: Heat the carrier 10 or the MEMS wafer 30 separately, or heat both at the same time, with the heating temperature ≤ 150°C. Within this temperature range, the bonding adhesive 20 with a lower softening temperature can be softened and produce plastic flow, while the bonding adhesive 40 with a higher softening temperature can remain non-flowing. Then, the carrier 10 and the MEMS wafer 30 are separated by sliding them in parallel, completing the debonding. This step S36 specifically corresponds to the reference Figure 5 As shown in (f). Figure 5 As shown in (f), during the debonding process, when the carrier 10 is heated, the specific position can be set to the heating area 2, and when an external force is applied to make the carrier 10 and the MEMS wafer 30 slide parallel to each other, the specific position can be set to the external force application area 1.

[0108] Step S37 : removing the bonding adhesive remaining on the surface of the MEMS wafer 30 and the surface of the carrier 10 by using dry oxygen or wet organic reagent.

[0109] The structure prepared in step S37 in this embodiment can correspond to the reference Figure 5 (g) After the MEMS wafer 30 is processed with the suspended structure 31 , the carrier plate 10 can be recycled.

[0110] The present invention softens only the bonding glue on the front of the carrier 10 but not the bonding glue on the back of the MEMS wafer 30, so that the bonding glue on the back of the MEMS wafer 30 does not flow during the sliding debonding process, thereby isolating and protecting the suspended structure 31 prepared in the MEMS wafer 30 so that it is not pulled and damaged during the sliding debonding process.

[0111] In another feasible embodiment, the semiconductor device is configured as a MEMS device, and the corresponding method for preparing the hollow structure in the MEMS wafer can refer to Figure 6 , Figure 6 A flowchart of another method for preparing a hollow structure in a MEMS wafer provided by an embodiment of the present invention. Specifically, the method may include the following steps:

[0112] Step S41: providing a carrier wafer 10 required for temporary bonding.

[0113] The carrier plate 10 can be a silicon carrier plate, a quartz carrier plate, a glass carrier plate, etc. The thickness of the carrier plate 10 can be set to be between 150 microns and 800 microns. Figure 7 , Figure 7 FIG is another flow chart of a method for preparing a hollow structure in a MEMS wafer 30 provided by an embodiment of the present invention. Further, step S41 in this embodiment may correspond to reference Figure 7 As shown in (a).

[0114] Step S42: Spin-coat a layer of bonding adhesive 20 with a relatively low softening temperature on the front surface of the carrier wafer 10, and use a hot plate or an oven to dry the bonding adhesive 20 with a relatively low softening temperature.

[0115] The bonding glue 20 with a lower softening temperature can be a common photoresist or bonding glue, and its softening temperature can be set to be within the range of 80°C to 150°C, and its thickness can be set to be 10 microns to 200 microns. Figure 7 As shown in (b).

[0116] Step S43: providing a MEMS wafer 30 , spin-coating a layer of bonding adhesive 40 with a relatively high softening temperature on the back side of the MEMS wafer 30 , and drying the bonding adhesive 40 with a relatively high softening temperature by using a hot plate or an oven.

[0117] The step S43 may refer to Figure 7As shown in (c), in this embodiment, the MEMS wafer 30 can be a silicon wafer, a quartz wafer, a glass wafer, etc., and can be set to a thickness between 150 microns and 800 microns. The bonding adhesive 40 with a relatively high softening temperature can be set to a conventional bonding adhesive, PI adhesive, SU8 adhesive, etc., with a softening temperature set within the range of 150°C to 250°C and a thickness set between 10 microns and 200 microns.

[0118] Step S44: Through semiconductor processes such as mask lithography, corrosion / etching, etc., the bonding glue 40 with a higher softening temperature corresponding to the area of the MEMS wafer 30 where the suspended structure 31 needs to be prepared is selectively removed to form a cavity structure 41, and the area of the cavity structure 41 in the contact surface between the cavity structure 41 and the suspended structure 31 is larger than the area of the suspended structure 31.

[0119] The step S44 may refer to Figure 7 As shown in (d), the cavity structure 41 corresponds to the opening structure in the above-mentioned preparation method.

[0120] Step S45: The MEMS wafer 30 is bonded to the carrier 10, and the bonding glue 20 with a lower softening temperature is in direct contact with the bonding glue 40 with a higher softening temperature. By applying temperature and pressure to the MEMS wafer 30 and the carrier 10, the MEMS wafer 30 and the carrier 10 are bonded together to complete temporary bonding.

[0121] The step S45 may refer to Figure 7 As shown in (e), the applicable temperature range can be set to 80°C to 250°C, and the applicable pressure can be set to between 0.1 kN and 1 kN.

[0122] Step S46: On the front side of the MEMS wafer 30, conventional MEMS processes such as photolithography and etching are used to form a suspended structure 31 that runs through the MEMS wafer 30 and points from the front side of the MEMS wafer 30 to the back side of the MEMS wafer 30. Figure 7 As shown in (f).

[0123] Step S47: Heat the carrier 10 or the MEMS wafer 30 separately, or heat both at the same time, with the heating temperature ≤ 150°C. Within this temperature range, the bonding adhesive 20 with a lower softening temperature can be softened and produce plastic flow, while the bonding adhesive 40 with a higher softening temperature can remain non-flowing. Then, the carrier 10 and the MEMS wafer 30 are separated by sliding them in parallel, completing the debonding. This step S47 can correspond to the reference as shown in FIG. Figure 7 As shown in (g).

[0124] Step S48: removing the bonding adhesive remaining on the surface of the MEMS wafer 30 and the surface of the carrier 10 by using dry oxygen or wet organic reagent.

[0125] The step S48 may refer to Figure 7 As shown in (h), after the MEMS wafer 30 is processed with the suspended structure 31, the carrier 10 can be recycled.

[0126] The present invention softens only the bonding glue on the front side of the carrier 10 but does not soften the bonding glue on the back side of the MEMS wafer 30, so that the bonding glue on the back side of the MEMS wafer 30 does not flow during the sliding debonding process. The bonding glue on the back side of the MEMS wafer 30 has a cavity structure 41, which completely isolates and protects the suspended structure 31 prepared in the MEMS wafer 30, so that it is not pulled and damaged during the sliding debonding process.

[0127] The semiconductor bonding device with a hollow structure to be prepared provided by an embodiment of the present invention is introduced below. The semiconductor bonding device with a hollow structure to be prepared described below and the method for preparing the hollow structure in the semiconductor device described above can be referred to each other.

[0128] Please refer to Figure 8 , Figure 8 A schematic structural diagram of a semiconductor bonding device with a hollow structure to be prepared provided in an embodiment of the present invention may include:

[0129] A carrier wafer 10, a final bonding adhesive 3 and a semiconductor device 4 are stacked in sequence;

[0130] At least a portion of the final bonding adhesive 3 is softened when the bonded device is debonded. The hollow structure prepared in the semiconductor device 4 has no contact with the portion of the final bonding adhesive 3 that is softened when the bonded device is debonded.

[0131] In this embodiment, a semiconductor bonding device with a hollow structure to be prepared is provided, comprising a carrier wafer 10, a final bonding adhesive 3, and a semiconductor device 4 stacked in sequence. At least a portion of the final bonding adhesive 3 softens during the debonding process of the bonding device. The hollow structure prepared in the semiconductor device 4 does not contact the portion of the final bonding adhesive 3 that softens during the debonding process, thereby preventing the softened portion of the final bonding adhesive 3 from causing the final bonding adhesive 3 to move when displaced, thereby ensuring the yield rate of the hollow structure prepared subsequently. The semiconductor bonding device with a hollow structure to be prepared provided in this embodiment is a bonding device in which a hollow structure has not yet been prepared in the semiconductor device 4.

[0132] Furthermore, in order to improve the simplicity of preparing the semiconductor bonding device with the hollow structure to be prepared while ensuring the yield of the hollow structure preparation, the above-mentioned final bonding glue 3 may include a first sub-bonding glue layer 21 and a second sub-bonding glue layer 42 arranged along the direction of the carrier 10 pointing to the semiconductor device 4, and the softening temperature of the first sub-bonding glue layer 21 is lower than the softening temperature of the second sub-bonding glue layer 42.

[0133] It should be noted that, in this embodiment, the final bonding adhesive 3 layer is set to include a first sub-bonding adhesive layer 21 and a second sub-bonding adhesive layer 42 set along the direction of the carrier wafer 10 pointing to the semiconductor device 4, and the softening temperature of the first sub-bonding adhesive layer 21 is lower than the softening temperature of the second sub-bonding adhesive layer 42. This ensures that when the carrier wafer 10 and the semiconductor device 4 are debonded, the first sub-bonding adhesive layer 21 that is softened first has no contact with the hollow structure in the semiconductor device 4, and further, when the first sub-bonding adhesive layer 21 that is softened first is deformed, it will not cause the hollow structure in the semiconductor device 4 to move, and the preparation of the final bonding adhesive 3 is facilitated.

[0134] Furthermore, in order to further prevent the final bonding glue 3 from affecting the hollow structure in the semiconductor device 4, it can be referred to Figure 9 , Figure 9 A schematic diagram of another semiconductor bonding device with a hollow structure to be prepared according to an embodiment of the present invention. The final bonding adhesive 3 may include a first sub-bonding adhesive layer 21 and a second sub-bonding adhesive layer 42;

[0135] A through-hole structure 421 is formed in the second sub-bonding adhesive layer 42 corresponding to the semiconductor device 4 along the stacking direction.

[0136] In this embodiment, the final bonding glue 3 layer is set to include a first sub-bonding glue layer 21 with a lower softening temperature and a second sub-bonding glue layer 42 with a higher softening temperature, which are set along the direction of the carrier 10 pointing to the semiconductor device 4. On this basis, the second sub-bonding glue layer 42 is set corresponding to the semiconductor device 4 to form a through-hole structure 421 along the stacking direction, which can further avoid the prepared final bonding glue 3 affecting the stability of the hollow structure in the semiconductor device 4 during the debonding process.

[0137] The semiconductor bonding device with a hollow structure to be prepared using the embodiment of the present invention comprises a carrier wafer 10, a final bonding adhesive 3 and a semiconductor device 4 stacked in sequence, at least a portion of the final bonding adhesive 3 softens when the bonding device is subjected to a debonding process, and the hollow structure prepared in the semiconductor device 4 has no contact with the portion of the final bonding adhesive 3 that is softened when the bonding device is subjected to a debonding process. The present invention sets the above-mentioned final bonding adhesive 3 to be at least partially softened when the bonding device is subjected to a debonding process, and the hollow structure prepared in the semiconductor device 4 has no contact with the softened portion of the final bonding adhesive 3, which can avoid the softened final bonding adhesive 3 driving the hollow structure to move when the bonding device is subjected to a thermal slip debonding process, thereby improving the convenience of the debonding process of the carrier wafer 10 and the semiconductor device 4 and improving the yield rate of the semiconductor device 4.

[0138] In addition, the embodiment of the present invention sets the final bonding glue 3 layer to include a first sub-bonding glue layer 21 and a second sub-bonding glue layer 42 set along the direction of the carrier 10 pointing to the semiconductor device 4, and the softening temperature of the first sub-bonding glue layer 21 is lower than the softening temperature of the second sub-bonding glue layer 42. It can ensure that when the carrier 10 and the semiconductor device 4 are debonded, the first sub-bonding glue layer 21 that is softened first has no contact with the hollow structure in the semiconductor device 4, and thus when the first sub-bonding glue layer 21 that is softened first is deformed, it will not drive The hollow structure in the semiconductor device 4 moves, and it is convenient for preparing the final bonding glue 3; the final bonding glue 3 layer is set to include a first sub-bonding glue layer 21 with a lower softening temperature and a second sub-bonding glue layer 42 with a higher softening temperature set along the direction of the carrier 10 pointing to the semiconductor device 4, and on this basis, the corresponding semiconductor device 4 is set in the second sub-bonding glue layer 42 to form a through-hole structure 421 along the stacking direction, which can further avoid the prepared final bonding glue 3 affecting the stability of the hollow structure in the semiconductor device 4 during the debonding process.

[0139] The semiconductor device provided by an embodiment of the present invention is introduced below. The semiconductor device described below and the method for preparing the hollow structure in the semiconductor device described above can be referred to each other.

[0140] The semiconductor device provided by the embodiment of the present invention may include a wafer having a hollow structure formed therein;

[0141] The hollow structure is prepared by bonding the wafer and the carrier plate using a final bonding adhesive.

[0142] At least a portion of the final bonding adhesive softens when the bonded device is debonded, and the hollow structure prepared in the semiconductor device has no contact with the portion of the final bonding adhesive that softens when the bonded device is debonded.

[0143] The present invention sets the above-mentioned final bonding glue to be at least partially softened when the bonded device is debonded, and the hollow structure prepared in the semiconductor device has no contact with the softened part of the final bonding glue. This can avoid the softened final bonding glue driving the hollow structure to move when the bonded device is subjected to thermal sliding debonding treatment, thereby improving the convenience of debonding the carrier and the semiconductor device, and improving the yield rate of semiconductor device preparation.

[0144] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from the other embodiments. Reference can be made to the descriptions of the identical or similar parts between the various embodiments. For the devices disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the descriptions are relatively simple, and the relevant parts can be referred to the descriptions of the methods.

[0145] In addition, it should be noted that, in this document, relationships such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0146] The above is a detailed introduction to the method for preparing a hollow structure in a semiconductor device provided by the present invention. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the ideas of the present invention, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A method for preparing a hollow structure in a semiconductor device (4), characterized in that: include: Providing a carrier wafer (10) and a semiconductor device (4), and selecting a bonding surface of the carrier wafer (10) and / or a bonding surface of the semiconductor device (4) as a bonding surface to be processed; An initial bonding adhesive is prepared on the bonding surface to be processed, and the carrier wafer (10) and the semiconductor device (4) are bonded and connected using the initial bonding adhesive to obtain a bonded device, and the entire initial bonding adhesive between the carrier wafer (10) and the semiconductor device (4) is used as a final bonding adhesive (3); the final bonding adhesive (3) includes a first sub-bonding adhesive layer (21) and a second sub-bonding adhesive layer (42) stacked along a preset direction, and the softening temperature of the first sub-bonding adhesive layer (21) is lower than the softening temperature of the second sub-bonding adhesive layer (42); the preset direction is a direction from the bonding surface of the carrier wafer (10) to the bonding surface of the semiconductor device (4); the second sub-bonding adhesive layer (42) is formed with a through-hole structure (421) corresponding to the semiconductor device (4) along the preset direction; The method comprises preparing an initial bonding adhesive on the bonding surface to be processed, and utilizing the initial bonding adhesive to bond the carrier (10) and the semiconductor device (4) to obtain a bonding device, comprising: Preparing the second sub-bonding adhesive layer (42) on the bonding surface of the semiconductor device (4); The semiconductor device (4) is processed to prepare the hollow structure in the semiconductor device (4); the through-hole structure (421) corresponds to the hollow structure, so that the second sub-bonding adhesive layer (42) has no contact with the hollow structure; the first sub-bonding adhesive layer (21) in the final bonding adhesive (3) is softened when the bonded device is debonded, and the hollow structure prepared in the semiconductor device (4) has no contact with the first sub-bonding adhesive layer (21); The bonded device is debonded using a thermal slip debonding process to complete the preparation of the hollow structure in the semiconductor device (4).

2. The method for preparing a hollow structure in a semiconductor device (4) according to claim 1, characterized in that: Selecting the bonding surface of the carrier wafer (10) and the bonding surface of the semiconductor device (4) as the bonding surfaces to be processed; Accordingly, an initial bonding adhesive is prepared on the bonding surface to be processed, and the carrier (10) and the semiconductor device (4) are bonded together using the initial bonding adhesive to obtain a bonding device, comprising: preparing the first sub-bonding adhesive layer (21) on the bonding surface of the carrier (10); Preparing the second sub-bonding adhesive layer (42) on the bonding surface of the semiconductor device (4); The first sub-bonding adhesive layer (21) and the second sub-bonding adhesive layer (42) are used to bond the carrier (10) and the semiconductor device (4) to obtain the bonded device.

3. The method for preparing a hollow structure in a semiconductor device (4) according to claim 2, characterized in that: After preparing the second sub-bonding adhesive layer (42) on the bonding surface of the semiconductor device (4), and before bonding the carrier (10) and the semiconductor device (4) using the first sub-bonding adhesive layer (21) and the second sub-bonding adhesive layer (42), the method further includes: Performing a patterning process on the second sub-bonding adhesive layer (42) so that the second sub-bonding adhesive layer (42) forms a through-hole structure (421) corresponding to the semiconductor device (4) along the preset direction, thereby obtaining a patterned second sub-bonding adhesive layer; Correspondingly, the carrier wafer (10) and the semiconductor device (4) are bonded together using the first sub-bonding adhesive layer (21) and the second sub-bonding adhesive layer (42) to obtain the bonded device, comprising: The first sub-bonding adhesive layer (21) and the patterned second sub-bonding adhesive layer are used to bond the carrier (10) and the semiconductor device (4) to obtain the bonded device.

4. The method for preparing a hollow structure in a semiconductor device (4) according to claim 3, characterized in that: The second sub-bonding adhesive layer (42) is patterned so that the second sub-bonding adhesive layer (42) forms a through-hole structure (421) along the preset direction corresponding to the semiconductor device (4), thereby obtaining a patterned second sub-bonding adhesive layer, comprising: The second sub-bonding adhesive layer (42) is subjected to a photolithographic process until the through-hole structure (421) is formed in the second sub-bonding adhesive layer (42), thereby obtaining the patterned second sub-bonding adhesive layer; the second sub-bonding adhesive layer (42) is a photosensitive adhesive layer; Alternatively, a patterned photoresist is prepared on the surface of the second sub-bonding adhesive layer (42); the patterned photoresist is a patterned structure formed along the preset direction corresponding to the semiconductor device (4) to expose the second sub-bonding adhesive layer (42); The second sub-bonding adhesive layer (42) exposed by the patterned photoresist is etched along the preset direction until the through-hole structure (421) is formed in the second sub-bonding adhesive layer (42), thereby obtaining the patterned second sub-bonding adhesive layer.

5. A semiconductor bonding device with a hollow structure to be prepared, characterized in that: include: A carrier wafer (10), a final bonding adhesive (3), and a semiconductor device (4) stacked in sequence; The final bonding adhesive (3) comprises a first sub-bonding adhesive layer (21) and a second sub-bonding adhesive layer (42) arranged in a direction from the carrier wafer (10) to the semiconductor device (4), and the softening temperature of the first sub-bonding adhesive layer (21) is lower than the softening temperature of the second sub-bonding adhesive layer (42); a through-hole structure (421) is formed in the second sub-bonding adhesive layer (42) along the stacking direction corresponding to the semiconductor device (4); the through-hole structure (421) corresponds to the area where the hollow structure is prepared in the semiconductor device (4), so that the second sub-bonding adhesive layer (42) has no contact with the hollow structure; the first sub-bonding adhesive layer (21) in the final bonding adhesive (3) softens when the bonding device is debonded, and the hollow structure prepared in the semiconductor device (4) has no contact with the first sub-bonding adhesive layer (21); the second sub-bonding adhesive layer (42) is prepared on the bonding surface of the semiconductor device (4).

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